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TWI882241B - 磊晶結構及其製造方法 - Google Patents

磊晶結構及其製造方法 Download PDF

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TWI882241B
TWI882241B TW111128785A TW111128785A TWI882241B TW I882241 B TWI882241 B TW I882241B TW 111128785 A TW111128785 A TW 111128785A TW 111128785 A TW111128785 A TW 111128785A TW I882241 B TWI882241 B TW I882241B
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nitride
layer
angle adjustment
silicon carbide
adjustment layer
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TW202344724A (zh
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林伯融
吳翰宗
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環球晶圓股份有限公司
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Abstract

一種磊晶結構製造方法，包含以下步驟：A.提供一碳化矽（SiC）基板，以該碳化矽基板之矽面（Si-face）作為一生長面，該生長面相對於該碳化矽基板之矽面具有一偏角；B. 以物理氣相沉積(physical vapor deposition, PVD)於該碳化矽基板之該生長面上方沉積厚度小於50nm之一氮化物角度調節層；C.於該氮化物角度調節層上方沉積一第一III族氮化物層；D.於該第一III族氮化物層上方沉積一第二III族氮化物層，透過該磊晶結構製造方法能有效改善當碳化矽基板矽面具有偏角時，該第一III族氮化物層及該第二III族氮化物層磊晶品質不佳的問題。

Description

磊晶結構及其製造方法
本發明係與磊晶結構製造方法有關；特別是指一種於SiC基板上形成III族氮化物層的方法。
已知以氮化鎵(GaN)為代表之三五族半導體已廣泛應用於各種電子結構中，其中一種重要應用為高電子移動率電晶體(High Electron Mobility Transistor，HEMT)，高電子移動率電晶體是具有二維電子氣(two dimensional electron gas,2-DEG)的一種電晶體，其二維電子氣鄰近於能隙不同的兩種材料之間的異質接合面，由於高電子移動率電晶體並非使用摻雜區域作為電晶體的載子通道，而是使用具有高電子移動性二維電子氣作為電晶體的載子通道，因此高電子遷移率電晶體具有高崩潰電壓、高電子遷移率、低導通電阻與低輸入電容等特性。
以高電子移動率電晶體為例，一般在生長GaN層之前需要透過金屬有機化學氣相沉積(metal-organic chemical vapor deposition,MOCVD)於SiC基板上生長AlN層作為成核層以減少SiC基板與GaN層晶格不匹配的問題，然而，當採用具有偏角之SiC基板矽面作為生長面進行AlN層之磊晶時，因MOCVD磊晶製程的特性所致，會將基板偏角的特性延伸到AlN層，而導致磊晶品質不佳，進而影響元件 的特性表現，因此，如何提供一種磊晶結構製造方法能於採用具有偏角之SiC基板矽面作為生長面進行III族氮化物層磊晶時提供較佳之磊晶品質，是亟待解決的問題。
有鑑於此，本發明之目的在於提供一種磊晶結構製造方法，能於採用具有偏角之SiC基板矽面作為生長面進行III族氮化物層磊晶時提供較佳之磊晶品質。
緣以達成上述目的，本發明提供的一種磊晶結構製造方法，包含以下步驟：A.提供一碳化矽(SiC)基板，以該碳化矽基板之矽面(Si-face)作為一生長面，該生長面相對於該碳化矽基板之矽面具有一偏角；B.以物理氣相沉積(physical vapor deposition,PVD)於該碳化矽基板之該生長面上方沉積厚度小於50nm之一氮化物角度調節層；C.於該氮化物角度調節層上方沉積一第一III族氮化物層；D.於該第一III族氮化物層上方沉積一第二III族氮化物層。
本發明另提供一種磊晶結構，包含一碳化矽(SiC)基板、一氮化物角度調節層、一第一III族氮化物層及一第二III族氮化物層，該碳化矽基板以矽面(Si-face)作為一生長面，該生長面相對於該碳化矽基板之矽面具有一大於0°之偏角；該氮化物角度調節層，位於該碳化矽基板之該生長面上方，該氮化物角度調節層是以物理氣相沉積(physical vapor deposition,PVD)方法於該碳化矽基板之該生長面上方沉積形成，該氮化物角度調節層厚度小於50nm；該第一III族氮化物層位於該氮化物角度調節層上方；以及該第二III族氮化物層位於該第一III族氮化物層上方。
本發明之效果在於，透過在該碳化矽基板及該第一III族氮化物層之間以物理氣相沉積(physical vapor deposition,PVD)方法形成該氮化物角度調節層，能改善碳化矽基板偏角特性延伸到該第一III族氮化物層，而導致該第一III族氮化物層及該第二III族氮化物層磊晶品質不佳的問題。
〔本發明〕
1:磊晶結構
10,10’:基板
12:碳化矽層
14:電子元件
20:氮化物角度調節層
30:第一III族氮化物層
40:第二III族氮化物層
S02,S04,S06,S08:步驟
圖1為本發明一較佳實施例之磊晶結構製造方法流程圖。
圖2為本發明一較佳實施例之磊晶結構示意圖。
圖3為本發明一較佳實施例之磊晶結構示意圖。
圖4A為比較例1之原子力顯微鏡照片。
圖4B為比較例2之原子力顯微鏡照片。
圖4C為本發明一較佳實施例之原子力顯微鏡照片。
圖5A為比較例2碳化矽基板與第一III族氮化物層AlN交界處示意圖。
圖5B為本發明一較佳實施例之碳化矽基板與氮化物角度調節層AlN交界處示意圖。
為能更清楚地說明本發明，茲舉較佳實施例並配合圖式詳細說明如後。請參圖1所示，為本發明一較佳實施例之磊晶結構製造方法流程圖，包含以下步驟：
步驟S02，提供一碳化矽(SiC)基板10，以該碳化矽基板10之矽面(Si-face)作為一生長面，該生長面相對於該碳化矽基板10之矽面具有一偏角，所述偏角(off-angle)是與碳化矽(0001)面的〈0001〉軸向之夾角，偏角角度無正負之差別。
步驟S04，以物理氣相沉積(physical vapor deposition,PVD)方法於該碳化矽基板10之該生長面上沉積厚度小於50nm之一氮化物角度調節層20；其中該氮化物角度調節層20為氮化鋁(AlN)或氮化鋁鎵(AlXGa1-XN)，該氮化物角度調節層20之RMS表面粗糙度小於5nm。
步驟S06，於該氮化物角度調節層20上方沉積一第一III族氮化物層30；於該步驟S06中，是以金屬有機化學氣相沉積(MOCVD)於該氮化物角度調節層20上方沉積該第一III族氮化物層30，該第一III族氮化物層30為氮化鋁(AlN)或氮化鋁鎵(AlXGa1-XN)，該第一III族氮化物層30之厚度為50至95nm，該第一III族氮化物層30之RMS表面粗糙度小於3nm，由此可見，透過該氮化物角度調節層20能有效提升該第一III族氮化物層30之磊晶品質。
步驟S08，於該第一III族氮化物層30上方沉積一第二III族氮化物層40；於該步驟S08中，是以金屬有機化學氣相沉積(MOCVD)於該氮化物角度調節層20上方沉積該第二III族氮化物層40，該第二III族氮化物層40為氮化鎵(GaN)且RMS表面粗糙度小於1.5nm，由此可見，透過該氮化物角度調節層20能有效提升該第二III族氮化物層40之磊晶品質。
其中，於該磊晶結構製造方法中包含以X光繞射分析該氮化物角度調節層20、該第一III族氮化物層30及該第二III族氮化物層40， 其中該氮化物角度調節層20之半峰全寬(FWHM)為1500至10000 arcsec，該第一III族氮化物層30其(002)晶面之半峰全寬(FWHM)為300至600 arcsec，該第二III族氮化物層40之(002)晶面之半峰全寬(FWHM)小於200arcsec，由此可見，透過該氮化物角度調節層20能有效提升該第一III族氮化物層30及該第二III族氮化物層40之磊晶品質。
再說明的是，於一實施例中，當該碳化矽基板10之矽面偏角為大於4°且不包含4°，能配合厚度小於50nm之該氮化物角度調節層20，其中該氮化物角度調節層之半峰全寬(FWHM)為該第一III族氮化物層之半峰全寬(FWHM)之20倍以上且該氮化物角度調節層之半峰全寬(FWHM)為6000~10000 arcsec；於另一實施例中，當該碳化矽基板10之矽面偏角為大於等於1°度且小於等於4°，能配合厚度小於25nm之該氮化物角度調節層20，其中該氮化物角度調節層之半峰全寬(FWHM)為該第一III族氮化物層之半峰全寬(FWHM)之10倍以上且該氮化物角度調節層之半峰全寬(FWHM)為3000~6000 arcsec；於另一實施例中，當該碳化矽基板10之矽面偏角小於1°且不包含1°，能配合厚度小於10nm之該氮化物角度調節層20，其中該氮化物角度調節層之半峰全寬(FWHM)為該第一III族氮化物層之半峰全寬(FWHM)之5倍以上且該氮化物角度調節層之半峰全寬(FWHM)為1500~3000 arcsec；藉此，當該碳化矽基板10之矽面偏角不同時，能配合不同氮化物角度調節層之厚度以達到提升該第一III族氮化物層30及該第二III族氮化物層40之磊晶品質的目的。
於另一實施例中，該步驟S02中進一步包含於該生長面上以金屬有機化學氣相沉積(MOCVD)沉積一碳化矽層12，該碳化矽層12之生長面相對於該碳化矽層12之矽面之偏角與該碳化矽基板10之生長 面相對於該碳化矽基板10之矽面之偏角相同，該碳化矽層12位於該碳化矽基板10與該氮化物角度調節層20之間；其中當該碳化矽層12之矽面偏角為4°時，該碳化矽層12之崩潰電壓大於600V，藉此，以供形成各種不同的電子元件14，舉例來說，具有該碳化矽層12之該碳化矽基板10之上方如圖2所示能經後續製程加工形成如金屬氧化物半導體場效電晶體(MOSFET)、肖特基屏障二極體(Schottky Barrier Diode,SBD)或形成該第一III族氮化物層30為氮化鋁(AlN)，該第二III族氮化物層40為氮化鎵(GaN)之高電子移動率電晶體(HEMT)等電子元件。
請配合圖3，為以上述磊晶結構製造方法製成之磊晶結構1，包含該碳化矽(SiC)基板10、該氮化物角度調節層20、該第一III族氮化物層30及該第二III族氮化物層40，該碳化矽基板10以矽面(Si-face)作為一生長面，該生長面相對於該碳化矽基板10之矽面具有一大於0°之偏角；該氮化物角度調節層20位於該碳化矽基板10之該生長面上方並與該生長面連接，該氮化物角度調節層20是以物理氣相沉積(physical vapor deposition,PVD)方法於該碳化矽基板10之該生長面上沉積形成；該第一III族氮化物層位於該氮化物角度調節層20上方；該第二III族氮化物層位於該第一III族氮化物層30上方。
請配合表1，以下基於二比較例及一實施例進行說明，其中，比較例1、2是分別於偏角0.5度之矽面碳化矽基板及偏角4度之矽面碳化矽基板上方依序以金屬有機化學氣相沉積(MOCVD)沉積第一III族氮化物層AlN及第二III族氮化物層GaN，再透過原子力顯微鏡(AFM)分析測量第二III族氮化物層之表面形貌，由表1之結果可知，當偏角角度較大時，RMS粗糙度表現明顯較差。
再說明的是，實施例與比較例1、2之磊晶結構差異在於，本實施例之磊晶結構在該碳化矽基板與該第一III族氮化物層AlN之間，具有一以物理氣相沉積方法形成之氮化物角度調節層AlN，如表1所示，本實施例之磊晶結構的RMS粗糙度表現明顯優於比較例2之磊晶結構的RMS粗糙度表現，除此之外，請配合圖5A及圖5B，圖5A為比較例2碳化矽基板10’與第一III族氮化物層AIN交界處示意圖，可見碳化矽基板之偏角特性延伸到第一III族氮化物層AlN，第一III族氮化物層AlN與碳化矽基板矽面具有大致相同之4°偏角，而圖5B為實施例之碳化矽基板10與氮化物角度調節層AlN交界處示意圖，可見碳化矽基板10之偏角特性透過以物理氣相沉積方法形成氮化物角度調節層AlN的方式，於氮化物角度調節層AlN處自動進行角度修正，如此一來，能有效改善沉積於氮化物角度調節層AlN上方之第一III族氮化物層及第二III族氮化物層之磊晶品質，也就是說，透過該角度調節層之設置能有效改善碳化矽基板矽面具有偏角時，上方第二III族氮化物層磊晶品質不佳的問題。
再說明的是，於表1中，相較於比較例2，本實施例透過該角度調節層之設置能使得第二III族氮化物層之RMS粗糙度由比較例2之20~-22.4nm提升至1.2~-1.3nm，達到將表面粗糙度優化了將近一個數量級的效果，且由表1可知，比較例1是採用偏角幾度趨近0度之碳化矽基板，比較例1之RMS粗糙度表現為2.4~-2.3nm與本實施例中之1.2~-1.3nm是在同一數量級，可見本實施例透過該角度調節層之設置能使得採用具有偏角基板的RMS粗糙度表現趨近採用小角度偏角基板或是無偏角基板之RMS粗糙度表現。
表1
Figure 111128785-A0305-12-0008-1
綜上所述，透過本發明在該碳化矽基板及該第一III族氮化物層之間以物理氣相沉積(physical vapor deposition,PVD)方法形成該氮化物角度調節層之技術手段，能有效改善當碳化矽基板矽面具有偏角時，碳化矽基板偏角特性延伸到該第一III族氮化物層，而導致該第一III族氮化物層及該第二III族氮化物層磊晶品質不佳的問題。
以上所述僅為本發明較佳可行實施例而已，舉凡應用本發明說明書及申請專利範圍所為之等效變化，理應包含在本發明之專利範圍內。
S02,S04,S06,S08:步驟

Claims (19)

  1. 一種磊晶結構製造方法，包含以下步驟： A.提供一碳化矽（SiC）基板，以該碳化矽基板之矽面（Si-face）作為一生長面，該生長面相對於該碳化矽基板之矽面具有一偏角； B. 以物理氣相沉積(physical vapor deposition, PVD)於該碳化矽基板之該生長面上方沉積厚度小於50nm之一氮化物角度調節層，該氮化物角度調節層為氮化鋁（AlN）或氮化鋁鎵（Al XGa 1-XN），X大於0且小於1； C.於該氮化物角度調節層上方沉積一第一III族氮化物層； D.於該第一III族氮化物層上方沉積一第二III族氮化物層。
  2. 如請求項1所述之磊晶結構製造方法，其中該偏角為大於4°。
  3. 如請求項2所述之磊晶結構製造方法，包含以X光繞射分析該氮化物角度調節層及該第一III族氮化物層，該氮化物角度調節層之半峰全寬(FWHM)為6000 arcsec以上。
  4. 如請求項1所述之磊晶結構製造方法，其中該偏角為1°至4°。
  5. 如請求項4所述之磊晶結構製造方法，其中該氮化物角度調節層之厚度小於25nm。
  6. 如請求項5所述之磊晶結構製造方法，包含以X光繞射分析該氮化物角度調節層及該第一III族氮化物層，該氮化物角度調節層之半峰全寬(FWHM)為3000 arcsec以上。
  7. 如請求項1所述之磊晶結構製造方法，其中該偏角為小於1°。
  8. 如請求項7所述之磊晶結構製造方法，其中該氮化物角度調節層之厚度小於10nm。
  9. 如請求項8所述之磊晶結構製造方法，包含以X光繞射分析該氮化物角度調節層及該第一III族氮化物層，該氮化物角度調節層之半峰全寬(FWHM)為1500 arcsec以上。
  10. 如請求項1所述之磊晶結構製造方法，其中於該步驟C中，是以金屬有機化學氣相沉積 (MOCVD) 於該氮化物角度調節層上方沉積該第一III族氮化物層，該第一III族氮化物層為氮化鋁（AlN）或氮化鋁鎵（Al XGa 1-XN）。
  11. 如請求項1所述之磊晶結構製造方法，其中該第二III族氮化物層為氮化鎵（GaN）。
  12. 如請求項1所述之磊晶結構製造方法，其中於步驟A中包含於該生長面上沉積一碳化矽層，該碳化矽層之生長面相對於該碳化矽層之矽面之偏角與該碳化矽基板之生長面相對於該碳化矽基板之矽面之偏角相同，該碳化矽層位於該氮化物角度調節層與該碳化矽基板之間。
  13. 一種磊晶結構，包含： 一碳化矽（SiC）基板，該碳化矽基板以矽面（Si-face）作為一生長面，該生長面相對於該碳化矽基板之矽面具有一大於0°之偏角； 一氮化物角度調節層，位於該碳化矽基板之該生長面上方，該氮化物角度調節層是以物理氣相沉積(physical vapor deposition, PVD)方法於該碳化矽基板之該生長面上方沉積形成，該氮化物角度調節層厚度小於50nm，該氮化物角度調節層為氮化鋁（AlN）或氮化鋁鎵（Al XGa 1-XN），X大於0且小於1； 一第一III族氮化物層，位於該氮化物角度調節層上方；以及 一第二III族氮化物層，位於該第一III族氮化物層上方。
  14. 如請求項13所述之磊晶結構，其中該偏角為大於4°，該氮化物角度調節層之半峰全寬(FWHM)為6000 arcsec以上。
  15. 如請求項13所述之磊晶結構，其中該偏角為大於等於1°且小於等於4°，該氮化物角度調節層之厚度小於25nm，該氮化物角度調節層之半峰全寬(FWHM)為3000 arcsec以上。
  16. 如請求項13所述之磊晶結構，其中該偏角為小於1°，該氮化物角度調節層之厚度小於10nm，該氮化物角度調節層之半峰全寬(FWHM)為1500 arcsec以上。
  17. 如請求項13所述之磊晶結構，其中該第一III族氮化物層是以金屬有機化學氣相沉積 (MOCVD) 方法於該氮化物角度調節層上方沉積，該第一III族氮化物層為氮化鋁（AlN）或氮化鋁鎵（Al XGa 1-XN），該第二III族氮化物層為氮化鎵（GaN）。
  18. 如請求項13所述之磊晶結構，其中該第二III族氮化物層為氮化鎵（GaN），其RMS表面粗糙度小於1.5nm。
  19. 如請求項13所述之磊晶結構，其中該第二III族氮化物層為氮化鎵（GaN），其(002)晶面之半峰全寬(FWHM)小於200arcsec。
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