TWI881935B - Display device and repairing method thereof - Google Patents
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Description
本發明是有關於一種顯示裝置及其修復方法。The present invention relates to a display device and a repairing method thereof.
微型發光二極體(micro light-emitting diode,micro LED)顯示裝置為平板顯示裝置(flat-panel display,FPD)的一種,其係由尺寸等級為1至100微米的發光二極體所組成。相較於液晶顯示裝置,微型發光二極體顯示裝置具有較高對比度與較快反應時間,並消耗較少功率。隨著光電產業的技術進步,光電元件的體積逐漸往小型化發展。因此微型發光二極體顯示裝置已成為現今的顯示裝置產業中的主流趨勢。Micro light-emitting diode (micro LED) display is a type of flat-panel display (FPD), which is composed of LEDs with a size ranging from 1 to 100 microns. Compared with liquid crystal display devices, micro LED display devices have higher contrast and faster response time, and consume less power. With the technological advancement of the optoelectronic industry, the size of optoelectronic components has gradually developed towards miniaturization. Therefore, micro LED display devices have become the mainstream trend in today's display device industry.
一般而言,微型發光二極體的良率尚無法達到完美,設置於陣列基板並與電極電連接的微型發光二極體經過檢測後,仍會發現少數的子畫素壞點。現有修復的方式是在原有的子畫素旁預留修復區域的遮光層開口,但前述方式會暴露過多的接墊造成不必要的反射光而產生影像干擾。Generally speaking, the yield of micro-LEDs is still not perfect. After testing, a small number of sub-pixel failures are still found in the micro-LEDs that are placed on the array substrate and electrically connected to the electrodes. The existing repair method is to reserve a light shielding layer opening for the repair area next to the original sub-pixel, but the aforementioned method will expose too many pads, causing unnecessary reflected light and generating image interference.
本發明提供一種顯示裝置,能在不增加過多反射率的情況下有效判斷修復區域的位置,可避免不必要的反射光產生影像干擾,進而提升顯示品質。The present invention provides a display device that can effectively determine the position of a repair area without increasing excessive reflectivity, thereby avoiding image interference caused by unnecessary reflected light and improving display quality.
本發明至少一實施例所提出的顯示裝置,包含陣列基板、反射絕緣層及遮光層。陣列基板具有多個畫素區,各畫素區包含多個子畫素單元,各子畫素單元包含第一接墊及發光元件,第一接墊設置於陣列基板上,發光元件設置於第一接墊上以電連接第一接墊。反射絕緣層設置於這些第一接墊上並圍繞這些發光元件,於各畫素區中,反射絕緣層具有至少一凹陷部,且凹陷部對應這些子畫素單元的其中之一者。遮光層設置於反射絕緣層上並圍繞這些發光元件,於各畫素區中,遮光層具有位於凹陷部中的填充部,且填充部對應這些子畫素單元的前述其中之一者。The display device provided in at least one embodiment of the present invention comprises an array substrate, a reflective insulating layer and a light shielding layer. The array substrate has a plurality of pixel regions, each pixel region comprises a plurality of sub-pixel units, each sub-pixel unit comprises a first pad and a light-emitting element, the first pad is disposed on the array substrate, and the light-emitting element is disposed on the first pad to be electrically connected to the first pad. The reflective insulating layer is disposed on the first pads and surrounds the light-emitting elements, and in each pixel region, the reflective insulating layer has at least one recessed portion, and the recessed portion corresponds to one of the sub-pixel units. The light shielding layer is disposed on the reflective insulating layer and surrounds the light emitting elements. In each pixel region, the light shielding layer has a filling portion located in the recessed portion, and the filling portion corresponds to one of the aforementioned sub-pixel units.
在本發明至少一實施例中,所述反射絕緣層具有圍繞所述凹陷部的圍繞部,所述遮光層具有位於圍繞部上的覆蓋部,所述填充部的厚度大於覆蓋部的厚度。In at least one embodiment of the present invention, the reflective insulating layer has a surrounding portion surrounding the recessed portion, the light shielding layer has a covering portion located on the surrounding portion, and the thickness of the filling portion is greater than the thickness of the covering portion.
在本發明至少一實施例中,所述填充部具有開口,所述開口暴露一部分的所述凹陷部。In at least one embodiment of the present invention, the filling portion has an opening, and the opening exposes a portion of the recessed portion.
在本發明至少一實施例中,於所述陣列基板的法線上,所述凹陷部與所述第一接墊重疊。In at least one embodiment of the present invention, on a normal line of the array substrate, the recessed portion overlaps with the first pad.
在本發明至少一實施例中,於所述陣列基板的法線上,所述凹陷部與所述第一接墊不重疊。In at least one embodiment of the present invention, on a normal line of the array substrate, the recessed portion and the first pad do not overlap.
在本發明至少一實施例中,各所述畫素區具有元件區及穿透區,所述多個子畫素單元位於元件區中,且所述反射絕緣層及所述遮光層未設置於穿透區中。In at least one embodiment of the present invention, each of the pixel regions has a device region and a transmission region, the plurality of sub-pixel units are located in the device region, and the reflective insulating layer and the light shielding layer are not disposed in the transmission region.
在本發明至少一實施例中,各所述子畫素單元包含設置於所述陣列基板上的第二接墊,所述發光元件設置於第二接墊上以電連接第二接墊,且所述反射絕緣層設置於這些第二接墊上。In at least one embodiment of the present invention, each of the sub-pixel units includes a second pad disposed on the array substrate, the light-emitting element is disposed on the second pad to be electrically connected to the second pad, and the reflective insulating layer is disposed on these second pads.
本發明至少另一實施例所提出的顯示裝置的修復方法,包含以下步驟。檢測所述顯示裝置。檢測出所述多個子畫素單元的其中之一者的所述發光元件具有缺陷。使用光學設備判斷對應所述多個子畫素單元的前述其中之一者的所述填充部的位置以定位修補區域。移除修補區域中的所述反射絕緣層及所述遮光層以暴露一部分的所述第一接墊。安裝替代發光元件於前述部分的所述第一接墊上以電連接所述第一接墊。The display device repair method proposed in at least another embodiment of the present invention comprises the following steps. Detecting the display device. Detecting that the light-emitting element of one of the plurality of sub-pixel units has a defect. Using an optical device to determine the position of the filling portion corresponding to the aforementioned one of the plurality of sub-pixel units to locate a repair area. Removing the reflective insulating layer and the light-shielding layer in the repair area to expose a portion of the first pad. Installing a replacement light-emitting element on the aforementioned portion of the first pad to electrically connect the first pad.
在本發明至少另一實施例中,所述顯示裝置的修復方法更包含形成回填遮光層覆蓋所述多個子畫素單元的所述其中之一者的所述發光元件。In at least another embodiment of the present invention, the display device repair method further includes forming a backfill light shielding layer to cover the light emitting element of one of the plurality of sub-pixel units.
在本發明至少另一實施例中,所述顯示裝置的修復方法更包含移除所述多個子畫素單元的所述其中之一者的所述發光元件。In at least another embodiment of the present invention, the display device repair method further includes removing the light emitting element of one of the plurality of sub-pixel units.
在以下的內文中,為了清楚呈現本發明的技術特徵,圖式中的元件(例如層、膜、基板以及區域等)的尺寸(例如長度、寬度、厚度與深度)會以不等比例的方式放大,而且有的元件數量會減少。因此,下文實施例的說明與解釋不受限於圖式中的元件數量以及元件所呈現的尺寸與形狀,而應涵蓋如實際製程及/或公差所導致的尺寸、形狀以及兩者的偏差。例如,圖式所示的平坦表面可以具有粗糙及/或非線性的特徵,而圖式所示的銳角可以是圓的。所以,本發明圖式所呈示的元件主要是用於示意,並非旨在精準地描繪出元件的實際形狀,也非用於限制本發明的申請專利範圍。In the following text, in order to clearly present the technical features of the present invention, the dimensions (e.g., length, width, thickness, and depth) of the elements (e.g., layers, films, substrates, and regions, etc.) in the drawings will be enlarged in unequal proportions, and the number of some elements will be reduced. Therefore, the description and explanation of the embodiments below are not limited to the number of elements in the drawings and the dimensions and shapes presented by the elements, but should cover the dimensions, shapes, and deviations therefrom caused by actual processes and/or tolerances. For example, the flat surface shown in the drawings may have rough and/or nonlinear features, and the sharp corners shown in the drawings may be rounded. Therefore, the elements presented in the drawings of the present invention are mainly used for illustration, and are not intended to accurately depict the actual shape of the elements, nor are they used to limit the scope of the patent application of the present invention.
其次,本發明所出現的「約」、「近似」或「實質上」等這類用字不僅涵蓋明確記載的數值與數值範圍,而且也涵蓋發明所屬技術領域中具有通常知識者所能理解的可允許偏差範圍,其中此偏差範圍可由測量時所產生的誤差來決定,而此誤差例如是起因於測量系統或製程條件兩者的限制。舉例而言,兩物件(例如基板的平面或走線)「實質上平行」或「實質上垂直」,其中「實質上平行」與「實質上垂直」分別代表這兩物件之間的平行與垂直可包含允許偏差範圍所導致的不平行與不垂直。Secondly, the words "approximately", "approximately" or "substantially" used in the present invention not only cover the numerical values and numerical ranges clearly stated, but also cover the permissible deviation range that can be understood by a person of ordinary skill in the art to which the invention belongs, wherein the deviation range can be determined by the error generated during measurement, and the error is caused by the limitations of the measurement system or process conditions, for example. For example, two objects (such as the planes or traces of a substrate) are "substantially parallel" or "substantially perpendicular", wherein "substantially parallel" and "substantially perpendicular" respectively represent that the parallelism and perpendicularity between the two objects may include non-parallelism and non-perpendicularity caused by the permissible deviation range.
此外,「約」可表示在上述數值的一個或多個標準偏差內,例如±30%、±20%、±10%或±5%內。本發明所出現的「約」、「近似」或「實質上」等這類用字可依光學性質、蝕刻性質、機械性質或其他性質來選擇可以接受的偏差範圍或標準偏差,並非單以一個標準偏差來套用以上光學性質、蝕刻性質、機械性質以及其他性質等所有性質。In addition, "approximately" may mean within one or more standard deviations of the above values, such as ±30%, ±20%, ±10% or ±5%. The words "approximately", "approximately" or "substantially" used in the present invention may select an acceptable deviation range or standard deviation based on the optical properties, etching properties, mechanical properties or other properties, and do not apply a single standard deviation to all properties such as the above optical properties, etching properties, mechanical properties and other properties.
本發明所使用的空間相對用語,例如「下方」、「之下」、「上方」、「之上」等,這是為了便於敘述一元件或特徵與另一元件或特徵之間的相對關係,如圖中所繪示。這些空間上的相對用語的真實意義包含其他的方位。例如,當圖示上下翻轉180度時,一元件與另一元件之間的關係,可能從「下方」、「之下」變成「上方」、「之上」。此外,本發明所使用的空間上的相對敘述也應作同樣的解釋。The spatially relative terms used in the present invention, such as "below", "under", "above", "on", etc., are for the purpose of facilitating the description of the relative relationship between one element or feature and another element or feature, as shown in the figure. The true meaning of these spatially relative terms includes other orientations. For example, when the figure is flipped 180 degrees up and down, the relationship between one element and another element may change from "below" or "under" to "above" or "on". In addition, the spatially relative descriptions used in the present invention should also be interpreted in the same way.
應當可以理解的是,雖然本發明可能會使用到「第一」、「第二」、「第三」等術語來描述各種元件或者信號,但這些元件或者信號不應受這些術語的限制。這些術語主要是用以區分一元件與另一元件,或者一信號與另一信號。另外,本發明所使用的術語「或」,應視實際情況可能包含相關聯的列出項目中的任一個或者多個的組合。It should be understood that, although the present invention may use terms such as "first", "second", and "third" to describe various components or signals, these components or signals should not be limited by these terms. These terms are mainly used to distinguish one component from another component, or one signal from another signal. In addition, the term "or" used in the present invention may include any one or more combinations of the related listed items depending on the actual situation.
雖然本發明中利用一系列的操作或步驟來說明修復方法,但是這些操作或步驟所示的順序不應被解釋為本發明的限制。例如,某些操作或步驟可以按不同順序進行及/或與其它步驟同時進行。此外,在此所述的每一個操作或步驟可以包含數個子步驟或動作。Although a series of operations or steps are used in the present invention to illustrate the repair method, the order in which these operations or steps are shown should not be interpreted as a limitation of the present invention. For example, some operations or steps can be performed in different orders and/or simultaneously with other steps. In addition, each operation or step described herein can include a plurality of sub-steps or actions.
此外,本發明可通過其他不同的具體實施例加以施行或應用,本發明的各項細節也可基於不同觀點與應用,在不悖離本發明的構思下進行各種實施例的組合、修改與變更。In addition, the present invention may be implemented or applied through other different specific embodiments, and the details of the present invention may also be combined, modified and changed in various embodiments based on different viewpoints and applications without departing from the concept of the present invention.
圖1是本發明至少一實施例的顯示裝置10的俯視示意圖。圖2A是圖1中區域A的放大示意圖。圖2B是圖2A中沿剖線a-a’繪製的剖面示意圖。請參閱圖1、圖2A及圖2B,顯示裝置10包含陣列基板100、反射絕緣層102及遮光層104。陣列基板100具有多個畫素區PX,各畫素區PX包含多個子畫素單元PU,各子畫素單元PU包含第一接墊P1及發光元件LE,第一接墊P1設置於陣列基板100上,發光元件LE設置於第一接墊P1上以電連接第一接墊P1。FIG. 1 is a schematic top view of a
反射絕緣層102設置於這些第一接墊P1上並圍繞這些發光元件LE,於各畫素區PX中,反射絕緣層102具有至少一凹陷部102r,且凹陷部102r對應這些子畫素單元PU的其中之一者。遮光層104設置於反射絕緣層102上並圍繞這些發光元件LE,於各畫素區PX中,遮光層104具有位於凹陷部102r中的填充部104f,且填充部104f對應這些子畫素單元PU的前述其中之一者。The
由於反射絕緣層102及遮光層104皆圍繞發光元件LE,且分別具有對應子畫素單元PU的其中之一者的凹陷部102r及填充部104f,在不需暴露第一接墊P1的情況下,利用外界光經反射絕緣層102及遮光層104的反射之後,位於凹陷部102r中的填充部104f會呈現較深的顏色來定位修補區域,故能在不增加過多反射率的情況下判斷修復區域的位置,可避免不必要的反射光產生影像干擾,進而提升顯示品質。Since the
如圖2B所示,反射絕緣層102具有圍繞凹陷部102r的圍繞部102s,遮光層104具有位於圍繞部102s上的覆蓋部104c,填充部104f的厚度t1大於覆蓋部104c的厚度t2。藉由前述厚度設計,在外界光經反射絕緣層102及遮光層104的反射之後,可有效加深位於凹陷部102r中的填充部104f所呈現的顏色,進而提升判斷修復區域的位置的辨識率及精準度。As shown in FIG. 2B , the reflective insulating
在一些實施例中,凹陷部102r的厚度可小於圍繞部102s的厚度。藉由前述厚度設計,在外界光經反射絕緣層102及遮光層104的反射之後,可進一步加深位於厚度較小的凹陷部102r中的填充部104f所呈現的顏色,有助於提升判斷修復區域的位置的辨識率及精準度。In some embodiments, the thickness of the recessed
請繼續參閱圖1、圖2A及圖2B,各子畫素單元PU包含設置於陣列基板100上的第二接墊P2,發光元件LE設置於第二接墊P2上以電連接第二接墊P2,且反射絕緣層102設置於這些第二接墊P2上。詳細而言,發光元件LE包含第一電極E1及第二電極E2(繪示於圖7B及圖8B),且經由第一電極E1及第二電極E2分別電連接第一接墊P1及第二接墊P2。此外,如圖2A及圖2B所示,於陣列基板100的法線上,凹陷部102r與第一接墊P1重疊,凹陷部102r亦可與第二接墊P2重疊。藉由前述設計,當原有的發光元件具有缺陷而需要設置替代發光元件時,可確保替代發光元件與第一接墊P1及第二接墊P2形成有效的電連接,進而提升修補良率。Please continue to refer to FIG. 1, FIG. 2A and FIG. 2B. Each sub-pixel unit PU includes a second pad P2 disposed on the
如圖1、圖2A及圖2B所示,反射絕緣層102圍繞並接觸這些發光元件LE,且反射絕緣層102具有多個凹陷部102r,且這些凹陷部102r分別對應這些子畫素單元PU。遮光層104圍繞並接觸這些發光元件LE,且遮光層104具有位於凹陷部102r中的填充部104f,這些填充部104f分別對應這些子畫素單元PU。As shown in FIG1 , FIG2A and FIG2B , the reflective insulating
在一些實施例中,發光元件LE可以是發光二極體(Light Emitting Diode,LED),例如是微型發光二極體(micro LED,μLED),其尺寸約為1至100微米。舉例而言,發光元件LE可以是覆晶式微型發光二極體(flip-chip micro LED),即發光元件LE的第一電極及第二電極皆位於發光元件LE面對陣列基板100的一側,但本發明不以此為限。在其他實施例中,發光元件LE可為垂直式微型發光二極體(vertical micro LED),即發光元件LE的第一電極及第二電極分別位於發光元件LE面對陣列基板100的一側及背對陣列基板100的一側。In some embodiments, the light emitting element LE may be a light emitting diode (LED), such as a micro LED (micro LED), whose size is about 1 to 100 micrometers. For example, the light emitting element LE may be a flip-chip micro LED, that is, the first electrode and the second electrode of the light emitting element LE are both located on the side of the light emitting element LE facing the
如圖1所示,各畫素區PX具有元件區EA及穿透區TA,子畫素單元PU位於元件區EA中,且反射絕緣層102及遮光層104未設置於穿透區TA中。詳細而言,由於子畫素單元PU、反射絕緣層102及遮光層104皆位於元件區EA中,故外界光不易穿過元件區EA,而子畫素單元PU、反射絕緣層102及遮光層104皆未設置於穿透區TA中,故外界光可輕易穿過穿透區TA。因此,在本實施例中,顯示裝置10可作為透明顯示裝置,但本發明不以為限。在其他實施例中,顯示裝置10的畫素區PX可不具有穿透區,即顯示裝置10可為非透明顯示裝置。As shown in FIG. 1 , each pixel region PX has a device region EA and a transmission region TA, the sub-pixel unit PU is located in the device region EA, and the reflective insulating
圖3是本發明至少一實施例的反射絕緣層102的光罩102M的俯視示意圖。請參閱圖3,反射絕緣層102的光罩102M包括對應元件區EA的開口部OP及對應穿透區TA、發光元件LE、凹陷部102r的遮蔽部SP。在本實施例中,反射絕緣層102包含負型光阻,故對應開口部OP的反射絕緣層102會留下,對應遮蔽部SP的反射絕緣層102會被完全移除或部分移除,因而形成元件區EA中的反射絕緣層102。FIG3 is a schematic top view of a
值得注意的是,由於發光元件LE巨量轉移至陣列基板100的過程可能會發生偏移的情形,於子畫素單元PU中,發光元件LE不一定都會位於預設位置(例如子畫素單元PU的下半部),故於反射絕緣層102的光罩102M對應子畫素單元PU的位置設計兩個遮蔽部SP,且在後續曝光及去光阻的製程中,位於兩個遮蔽部SP中對應未設置發光元件LE的位置的反射絕緣層102會被部分移除而形成凹陷部102r,位於兩個遮蔽部SP中對應設置發光元件LE的位置的反射絕緣層102會因為形成於發光元件LE上的厚度過薄而被完全移除。It is worth noting that, since the light-emitting elements LE may be offset during the mass transfer to the
在一些實施例中,反射絕緣層102及遮光層104的材料可分別包含光阻等,例如反射絕緣層102可為包含散射粒子的光阻,散射粒子的材料例如為二氧化鈦,且反射絕緣層102的反射率不小於60%,而遮光層104可為深色光阻,遮光層104的光學密度(optical density, OD)不小於2,且遮光層104的穿透率不大於1%。陣列基板100可包含顯示裝置10需要的元件或線路,例如驅動元件、開關元件、電源線、驅動訊號線、時序訊號線、電流補償線、檢測訊號線等。第一接墊P1及第二接墊P2的材料可包含鎳金合金等。In some embodiments, the materials of the reflective insulating
圖4是本發明至少一實施例的顯示裝置10’的俯視示意圖。圖5A是圖4中區域B的放大示意圖。圖5B是圖5A中沿剖線b-b’繪製的剖面示意圖。請參閱圖4、圖5A及圖5B,圖4的實施例與圖1的實施例大部分的元件結構、材料、製程及相對位置關係皆相同,故在此不再贅述相同技術特徵。兩實施例之間的差異為圖4的顯示裝置10’的遮光層104的填充部104f具有開口O,且開口O暴露一部分的反射絕緣層102的凹陷部102r。FIG4 is a schematic top view of a
藉由上述設計,在外界光經反射絕緣層102及遮光層104的反射之後,除了填充部104f可呈現較深的顏色,填充部104f的開口O所暴露的部分的凹陷部102r可於前述呈現較深的顏色的填充部104f中呈現淺色亮點而形成明顯對比,進而提升判斷修復區域的位置的辨識率及精準度。With the above design, after the external light is reflected by the reflective insulating
如圖5A及圖5B所示,於陣列基板100的法線上,填充部104f的開口O與第一接墊P1重疊,填充部104f的開口O亦可與第二接墊P2重疊。藉由前述設計,當原有的發光元件具有缺陷而需要設置替代發光元件時,可確保替代發光元件與第一接墊P1及第二接墊P2形成有效的電連接,進而提升修補良率。此外,填充部104f的開口O正投影於陣列基板100的正投影範圍位於凹陷部102r正投影於陣列基板100的正投影範圍內,可避免填充部104f的開口O過大而產生不必要的反射光產生影像干擾。As shown in FIG. 5A and FIG. 5B , on the normal line of the
圖6是本發明至少一實施例的遮光層104的光罩104M的俯視示意圖。請參閱圖6,遮光層104的光罩104M包括對應元件區EA的開口部OP及對應穿透區TA、發光元件LE、凹陷部102r的遮蔽部SP。在本實施例中,遮光層104包含負型光阻,故對應開口部OP的遮光層104會留下,對應遮蔽部SP的遮光層104會被移除,因而形成元件區EA中的遮光層104。FIG6 is a top view schematic diagram of a
值得注意的是,由於發光元件LE巨量轉移至陣列基板100的過程可能會發生偏移的情形,於子畫素單元PU中,發光元件LE不一定都會位於預設位置(例如子畫素單元PU的下半部),故於遮光層104的光罩104M對應子畫素單元PU的位置設計兩個遮蔽部SP,且在後續曝光及去光阻的製程中,位於兩個遮蔽部SP中對應未設置發光元件LE的位置的遮光層104會被移除而形成開口O,位於兩個遮蔽部SP中對應設置發光元件LE的位置的遮光層104會因為形成於發光元件LE上的厚度過薄而被完全移除。It is worth noting that, since the light-emitting elements LE may be offset during the process of transferring a large number of them to the
圖7A是本發明至少另一實施例的顯示裝置的局部放大示意圖。圖7B是圖7A中沿剖線c-c’繪製的剖面示意圖。請參閱圖7A及圖7B,圖7A及圖7B的實施例與圖2A及圖2B的實施例大部分的元件結構、材料、製程及相對位置關係皆相同,故在此不再贅述相同技術特徵。兩實施例之間的差異為,於陣列基板100的法線上,圖7A及圖7B的顯示裝置的凹陷部102r與第一接墊P1不重疊。FIG. 7A is a partially enlarged schematic diagram of a display device of at least another embodiment of the present invention. FIG. 7B is a schematic cross-sectional diagram drawn along the section line c-c' in FIG. 7A. Please refer to FIG. 7A and FIG. 7B. Most of the device structures, materials, processes and relative position relationships of the embodiment of FIG. 7A and FIG. 7B are the same as those of the embodiment of FIG. 2A and FIG. 2B, so the same technical features are not described here. The difference between the two embodiments is that on the normal line of the
圖8A是本發明至少另一實施例的顯示裝置的局部放大示意圖。圖8B是圖8A中沿剖線d-d’繪製的剖面示意圖。請參閱圖8A及圖8B,圖8A及圖8B的實施例與圖5A及圖5B的實施例大部分的元件結構、材料、製程及相對位置關係皆相同,故在此不再贅述相同技術特徵。兩實施例之間的差異為,於陣列基板100的法線上,圖8A及圖8B的顯示裝置的凹陷部102r與第一接墊P1不重疊,且填充部104f的開口O與第一接墊P1不重疊。FIG8A is a partially enlarged schematic diagram of a display device of at least another embodiment of the present invention. FIG8B is a cross-sectional schematic diagram drawn along the section line d-d' in FIG8A. Please refer to FIG8A and FIG8B. Most of the component structures, materials, processes and relative positional relationships of the embodiments of FIG8A and FIG8B are the same as those of the embodiments of FIG5A and FIG5B, so the same technical features are not repeated here. The difference between the two embodiments is that on the normal line of the
上述圖7A、圖7B、圖8A及圖8B的設計可應用於包含小尺寸的發光元件的顯示裝置,例如尺寸約為10微米的發光元件。由於小尺寸的發光元件的子畫素單元的佈局空間有限,藉由將凹陷部102r設置於子畫素單元之外,可避免影響原有子畫素單元的佈局設計。The designs of FIG. 7A, FIG. 7B, FIG. 8A and FIG. 8B can be applied to a display device including a small-sized light-emitting element, such as a light-emitting element of about 10 micrometers. Since the layout space of the sub-pixel unit of the small-sized light-emitting element is limited, by setting the recessed
此外,如圖7A及圖7B所示,於陣列基板100的法線上,凹陷部102r與第二接墊P2亦不重疊。如圖8A及圖8B所示,於陣列基板100的法線上,凹陷部102r與第二接墊P2亦不重疊,且填充部104f的開口O與第二接墊P2亦不重疊。In addition, as shown in FIG7A and FIG7B , the recessed
圖9到圖13是圖4的顯示裝置10’的修復方法在不同修復階段的局部示意圖。詳細而言,圖9(A)、圖10(A)、圖11(A)、圖12(A)及圖13(A)分別為不同修復階段的俯視示意圖,而圖9(B)、圖10(B)、圖11(B)、圖12(B)及圖13(B)分別為不同修復階段的剖面示意圖,且其剖線位置與圖5A中的剖線b-b’相同。Fig. 9 to Fig. 13 are partial schematic diagrams of the repair method of the display device 10' of Fig. 4 at different repair stages. Specifically, Fig. 9 (A), Fig. 10 (A), Fig. 11 (A), Fig. 12 (A) and Fig. 13 (A) are respectively top view schematic diagrams of different repair stages, and Fig. 9 (B), Fig. 10 (B), Fig. 11 (B), Fig. 12 (B) and Fig. 13 (B) are respectively cross-sectional schematic diagrams of different repair stages, and the position of the section line is the same as the section line b-b' in Fig. 5A.
請參閱圖9(A)及圖9(B),檢測如圖4所示的顯示裝置10’,檢測出多個子畫素單元PU的其中之一者的發光元件LE具有缺陷。請參閱圖10(A)及圖10(B),使用光學設備(圖未示)判斷對應多個子畫素單元PU的前述其中之一者的填充部104f的位置以定位修補區域RA,移除修補區域RA中的反射絕緣層102及遮光層104以暴露一部分的第一接墊P1。在一些實施例中,光學設備可包含電荷耦合器件(charge-coupled device, CCD)。Referring to FIG. 9 (A) and FIG. 9 (B), the display device 10' shown in FIG. 4 is detected to detect that the light-emitting element LE of one of the plurality of sub-pixel units PU has a defect. Referring to FIG. 10 (A) and FIG. 10 (B), an optical device (not shown) is used to determine the position of the filling
請參閱圖11(A)及圖11(B),安裝替代發光元件LE’於前述部分的第一接墊P1上以電連接第一接墊P1,也就是使替代發光元件LE’的第一電極E1’電連接第一接墊P1。此外,如圖10(A)及圖11(A)所示,修補區域RA更暴露一部分的第二接墊P2,替代發光元件LE’亦位於前述部分的第二接墊P2上以電連接第二接墊P2。Please refer to FIG. 11 (A) and FIG. 11 (B), the replacement light emitting element LE' is installed on the first pad P1 of the aforementioned portion to be electrically connected to the first pad P1, that is, the first electrode E1' of the replacement light emitting element LE' is electrically connected to the first pad P1. In addition, as shown in FIG. 10 (A) and FIG. 11 (A), the repair area RA further exposes a portion of the second pad P2, and the replacement light emitting element LE' is also located on the second pad P2 of the aforementioned portion to be electrically connected to the second pad P2.
請參閱圖12(A)及圖12(B),於修補區域RA中形成回填反射絕緣層102’,回填反射絕緣層102’設置於上述部分的第一接墊P1上並圍繞替代發光元件LE’。此外,如圖12(A)所示,回填反射絕緣層102’亦設置於上述部分的第二接墊P2上。Referring to FIG. 12 (A) and FIG. 12 (B), a backfill reflective insulating layer 102' is formed in the repair area RA, and the backfill reflective insulating layer 102' is disposed on the first pad P1 of the above-mentioned portion and surrounds the replacement light-emitting element LE'. In addition, as shown in FIG. 12 (A), the backfill reflective insulating layer 102' is also disposed on the second pad P2 of the above-mentioned portion.
請參閱圖13(A)及圖13(B),形成回填遮光層104’覆蓋多個子畫素單元PU的上述其中之一者的發光元件LE。詳細而言,回填遮光層104’形成於遮光層104上及多個子畫素單元PU的上述其中之一者的發光元件LE上以覆蓋遮光層104及多個子畫素單元PU的上述其中之一者的發光元件LE,且回填遮光層104’更形成於回填反射絕緣層102’上以圍繞替代發光元件LE’。Please refer to FIG. 13 (A) and FIG. 13 (B), a backfilled light shielding layer 104' is formed to cover the light emitting element LE of one of the above-mentioned multiple sub-pixel units PU. In detail, the backfilled light shielding layer 104' is formed on the
圖14到圖17是圖4的顯示裝置10’的修復方法在不同修復階段的局部示意圖。詳細而言,圖14(A)、圖15(A)、圖16(A)及圖17(A)分別為不同修復階段的俯視示意圖,而圖14(B)、圖15(B)、圖16(B)及圖17(B)分別為不同修復階段的剖面示意圖,且其剖線位置與圖5A中的剖線b-b’相同。此外,圖14到圖17的顯示裝置10’的修復方法亦包含如圖9所示的檢測顯示裝置10’及檢測出多個子畫素單元PU的其中之一者的發光元件LE具有缺陷,故在此不再贅述相同技術特徵。FIG. 14 to FIG. 17 are partial schematic diagrams of the repair method of the display device 10' of FIG. 4 at different repair stages. In detail, FIG. 14 (A), FIG. 15 (A), FIG. 16 (A) and FIG. 17 (A) are respectively top view schematic diagrams of different repair stages, and FIG. 14 (B), FIG. 15 (B), FIG. 16 (B) and FIG. 17 (B) are respectively cross-sectional schematic diagrams of different repair stages, and the position of the section line is the same as the section line b-b' in FIG. 5A. In addition, the repair method of the display device 10' of FIG. 14 to FIG. 17 also includes detecting the display device 10' as shown in FIG. 9 and detecting that the light-emitting element LE of one of the plurality of sub-pixel units PU has a defect, so the same technical features will not be repeated here.
請參閱圖14(A)及圖14(B),使用光學設備(圖未示)判斷對應多個子畫素單元PU的上述其中之一者的填充部104f的位置以定位修補區域RA,移除修補區域RA中的反射絕緣層102及遮光層104以暴露一部分的第一接墊P1,且移除多個子畫素單元PU的上述其中之一者的發光元件LE。Please refer to Figures 14 (A) and 14 (B), use an optical device (not shown) to determine the position of the filling
請參閱圖15(A)及圖15(B),安裝替代發光元件LE’於前述部分的第一接墊P1上以電連接第一接墊P1,也就是使替代發光元件LE’的第一電極E1’電連接第一接墊P1。此外,如圖14(A)及圖15(A)所示,修補區域RA更暴露一部分的第二接墊P2,替代發光元件LE’亦位於前述部分的第二接墊P2上以電連接第二接墊P2。Please refer to FIG. 15 (A) and FIG. 15 (B), the replacement light emitting element LE' is installed on the first pad P1 of the aforementioned portion to be electrically connected to the first pad P1, that is, the first electrode E1' of the replacement light emitting element LE' is electrically connected to the first pad P1. In addition, as shown in FIG. 14 (A) and FIG. 15 (A), the repair area RA further exposes a portion of the second pad P2, and the replacement light emitting element LE' is also located on the second pad P2 of the aforementioned portion to be electrically connected to the second pad P2.
請參閱圖16(A)及圖16(B),於修補區域RA中形成回填反射絕緣層102’,回填反射絕緣層102’設置於上述部分的第一接墊P1上並圍繞替代發光元件LE’。此外,如圖16(A)所示,回填反射絕緣層102’亦設置於上述部分的第二接墊P2上。請參閱圖17(A)及圖17(B),形成回填遮光層104’於回填反射絕緣層102’上以圍繞替代發光元件LE’。Referring to FIG. 16 (A) and FIG. 16 (B), a backfill reflective insulating layer 102' is formed in the repair area RA, and the backfill reflective insulating layer 102' is disposed on the first pad P1 of the above-mentioned portion and surrounds the alternative light-emitting element LE'. In addition, as shown in FIG. 16 (A), the backfill reflective insulating layer 102' is also disposed on the second pad P2 of the above-mentioned portion. Referring to FIG. 17 (A) and FIG. 17 (B), a backfill light-shielding layer 104' is formed on the backfill reflective insulating layer 102' to surround the alternative light-emitting element LE'.
應理解的是,雖然圖9到圖13的顯示裝置的修復方法及圖14到圖17的顯示裝置的修復方法係以圖4的顯示裝置10’作為例子進行修復步驟的說明,但若以圖1的顯示裝置10作為例子進行修復的步驟與以圖4的顯示裝置10’作為例子進行修復的步驟實質上相同,故在此不再贅述。It should be understood that although the repair methods of the display devices of Figures 9 to 13 and the repair methods of the display devices of Figures 14 to 17 use the display device 10' of Figure 4 as an example to illustrate the repair steps, the steps of repairing the
綜上所述,在以上本發明至少一實施例的顯示裝置及其修復方法,由於反射絕緣層及遮光層皆圍繞發光元件,且分別具有對應子畫素單元的其中之一者的凹陷部及填充部,在不需暴露接墊的情況下,利用外界光經反射絕緣層及遮光層的反射之後,位於反射絕緣層凹陷部中的遮光層填充部會呈現較深的顏色來定位修補區域,故能在不增加過多反射率的情況下有效判斷修復區域的位置,可避免不必要的反射光產生影像干擾,進而提升顯示品質 。 In summary, in the display device and the repair method thereof of at least one embodiment of the present invention, since the reflective insulating layer and the light-shielding layer both surround the light-emitting element and respectively have a recessed portion and a filling portion corresponding to one of the sub-pixel units, without exposing the pad, the repair area can be located by using the fact that after the external light is reflected by the reflective insulating layer and the light-shielding layer, the filling portion of the light-shielding layer located in the recessed portion of the reflective insulating layer will present a darker color. Therefore, the position of the repair area can be effectively determined without increasing the reflectivity too much, and unnecessary reflected light can be avoided to cause image interference, thereby improving the display quality .
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,本發明所屬技術領域中具有通常知識者,在不脫離本發明精神和範圍內,當可作些許更動與潤飾,因此本發明保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above by way of embodiments, they are not intended to limit the present invention. A person having ordinary knowledge in the technical field to which the present invention belongs may make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the attached patent application.
10、10’:顯示裝置
100:陣列基板
102:反射絕緣層
102’:回填反射絕緣層
102M、104M:光罩
102s:圍繞部
102r:凹陷部
104:遮光層
104’:回填遮光層
104c:覆蓋部
104f:填充部
A、B:區域
a-a’、b-b’、c-c’、d-d’:剖線
E1、E1’:第一電極
E2:第二電極
EA:元件區
LE:發光元件
LE’:替代發光元件
O:開口
OP:開口部
P1:第一接墊
P2:第二接墊
PU:子畫素單元
PX:畫素區
RA:修補區域
SP:遮蔽部
t1、t2:厚度
TA:穿透區10, 10': display device
100: array substrate
102: reflective insulating layer
102': backfilled reflective insulating
圖1是本發明至少一實施例的顯示裝置的俯視示意圖。 圖2A是圖1中區域A的放大示意圖。 圖2B是圖2A中沿剖線a-a’繪製的剖面示意圖。 圖3是本發明至少一實施例的反射絕緣層的光罩的俯視示意圖。 圖4是本發明至少另一實施例的顯示裝置的俯視示意圖。 圖5A是圖4中區域B的放大示意圖。 圖5B是圖5A中沿剖線b-b’繪製的剖面示意圖。 圖6是本發明至少另一實施例的遮光層的光罩的俯視示意圖。 圖7A是本發明至少另一實施例的顯示裝置的局部放大示意圖。 圖7B是圖7A中沿剖線c-c’繪製的剖面示意圖。 圖8A是本發明至少另一實施例的顯示裝置的局部放大示意圖。 圖8B是圖8A中沿剖線d-d’繪製的剖面示意圖。 圖9到圖13是本發明至少另一實施例的顯示裝置的修復方法在不同修復階段的局部示意圖。 圖14到圖17是本發明至少另一實施例的顯示裝置的修復方法在不同修復階段的局部示意圖。Fig. 1 is a schematic top view of a display device of at least one embodiment of the present invention. Fig. 2A is an enlarged schematic diagram of region A in Fig. 1. Fig. 2B is a schematic cross-sectional view drawn along section line a-a' in Fig. 2A. Fig. 3 is a schematic top view of a light mask of a reflective insulating layer of at least one embodiment of the present invention. Fig. 4 is a schematic top view of a display device of at least another embodiment of the present invention. Fig. 5A is an enlarged schematic diagram of region B in Fig. 4. Fig. 5B is a schematic cross-sectional view drawn along section line b-b' in Fig. 5A. Fig. 6 is a schematic top view of a light mask of a light-shielding layer of at least another embodiment of the present invention. Fig. 7A is a partially enlarged schematic diagram of a display device of at least another embodiment of the present invention. Fig. 7B is a schematic cross-sectional view drawn along section line c-c' in Fig. 7A. FIG8A is a partially enlarged schematic diagram of a display device according to at least another embodiment of the present invention. FIG8B is a schematic cross-sectional diagram drawn along the section line d-d' in FIG8A. FIG9 to FIG13 are partial schematic diagrams of a display device repair method according to at least another embodiment of the present invention at different repair stages. FIG14 to FIG17 are partial schematic diagrams of a display device repair method according to at least another embodiment of the present invention at different repair stages.
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無Domestic storage information (please note the order of storage institution, date, and number) None Overseas storage information (please note the order of storage country, institution, date, and number) None
100:陣列基板 100: Array substrate
102:反射絕緣層 102: Reflective insulation layer
102s:圍繞部 102s: surrounding part
102r:凹陷部 102r: Depression
104:遮光層 104: Shading layer
104c:覆蓋部 104c: Covering part
104f:填充部 104f: Filling section
E1:第一電極 E1: First electrode
LE:發光元件 LE: Light-emitting element
P1:第一接墊 P1: First pad
t1、t2:厚度 t1, t2: thickness
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW113146449A TWI881935B (en) | 2024-11-29 | 2024-11-29 | Display device and repairing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW113146449A TWI881935B (en) | 2024-11-29 | 2024-11-29 | Display device and repairing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWI881935B true TWI881935B (en) | 2025-04-21 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW113146449A TWI881935B (en) | 2024-11-29 | 2024-11-29 | Display device and repairing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI881935B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW436750B (en) * | 1998-03-02 | 2001-05-28 | Ibm | Reflection type liquid crystal device, manufacturing method therefor, and projection display system |
| WO2023012576A1 (en) * | 2021-08-05 | 2023-02-09 | 株式会社半導体エネルギー研究所 | Display device, display module, electronic device, and method for producing display device |
| US11967590B2 (en) * | 2020-07-31 | 2024-04-23 | Samsung Display Co., Ltd. | Display device |
| WO2024201259A1 (en) * | 2023-03-31 | 2024-10-03 | 株式会社半導体エネルギー研究所 | Semiconductor device, and semiconductor device manufacturing method |
-
2024
- 2024-11-29 TW TW113146449A patent/TWI881935B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW436750B (en) * | 1998-03-02 | 2001-05-28 | Ibm | Reflection type liquid crystal device, manufacturing method therefor, and projection display system |
| US11967590B2 (en) * | 2020-07-31 | 2024-04-23 | Samsung Display Co., Ltd. | Display device |
| WO2023012576A1 (en) * | 2021-08-05 | 2023-02-09 | 株式会社半導体エネルギー研究所 | Display device, display module, electronic device, and method for producing display device |
| WO2024201259A1 (en) * | 2023-03-31 | 2024-10-03 | 株式会社半導体エネルギー研究所 | Semiconductor device, and semiconductor device manufacturing method |
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