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TWI880775B - Battery capacity calculation method and battery capacity calculation system - Google Patents

Battery capacity calculation method and battery capacity calculation system Download PDF

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TWI880775B
TWI880775B TW113121446A TW113121446A TWI880775B TW I880775 B TWI880775 B TW I880775B TW 113121446 A TW113121446 A TW 113121446A TW 113121446 A TW113121446 A TW 113121446A TW I880775 B TWI880775 B TW I880775B
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battery
internal resistance
discharge
internal
sampling point
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TW202548282A (en
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陳軒盈
陳建銘
李俊穎
吳傳揚
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偉詮電子股份有限公司
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Abstract

A battery capacity calculation method includes acquiring an ideal open circuit voltage curve of a battery, discharging the battery by using a discharge current, detecting N discharge voltages corresponding to N depth of discharges (DODs) when the battery is discharged, generating N internal resistances corresponding to the N DODs according to the ideal open circuit voltage curve, the discharge current, and the N discharge voltages, adjusting a distribution of at least one internal resistance sampling point on a battery resistance curve according to (N-1) slopes of the N internal resistance sampling points on the battery resistance curve corresponding to the N internal resistances so as to fit the battery resistance curve, and updating N internal resistances after the distribution of the N internal resistance sampling points is adjusted. N is a positive integer greater than 2.

Description

電池電量計算方法及電池電量計算系統Battery power calculation method and battery power calculation system

本發明描述一種電池電量計算方法及電池電量計算系統,尤指一種低複雜度以及高準確率的電池電量計算方法及電池電量計算系統。 The present invention describes a battery power calculation method and a battery power calculation system, and in particular, a low-complexity and high-accuracy battery power calculation method and a battery power calculation system.

隨著科技日新月異,各種可攜式電子產品也紛紛問世。近年來,使用者對於可攜式電子產品的需求為:高效能、長續航、以及微型化。因此,可攜式電子產品內電池的使用以及管理,為重要的設計考量。影響電池電量狀態的因素非常多,例如電池充放電速率、溫度、電池老化狀態等等。為了正確獲得正確的電池電量狀態,許多系統會採取計算複雜度高的方式實現。例如,現今在求得電池電量狀態(State of Charge,SOC)時,會採取開路電壓法(Open Circuit Voltage,OCV)或是庫倫計數法(Coulomb Counting)。 With the rapid development of technology, various portable electronic products have been launched. In recent years, users have been demanding high performance, long battery life, and miniaturization for portable electronic products. Therefore, the use and management of batteries in portable electronic products are important design considerations. There are many factors that affect the battery power state, such as battery charge and discharge rate, temperature, battery aging state, etc. In order to correctly obtain the correct battery power state, many systems will adopt a highly complex calculation method to achieve it. For example, when obtaining the battery power state (State of Charge, SOC) today, the open circuit voltage method (Open Circuit Voltage, OCV) or the coulomb counting method (Coulomb Counting) will be adopted.

由於影響電量狀態的因素太多,個別因素還會互相影響,使得計算電池電量狀態變成一個複雜的問題,如僅用單純的開路電壓法或是庫倫計數法並無法準確地計算電池電量狀態。因此,在目前的技術中,常常會結合高維度的回歸計算、迭代運算、或是類神經網路(Neural Network,NN)以增加精確度。然而,引入高維度的回歸計算、迭代運算、或是類神經網路的代價為高複雜度以及高耗能。換句話說,若是引入高複雜度的演算法來計算電池電量狀態,將 會加速可攜式電子產品的電量消耗,使其續航能力降低。 Since there are too many factors that affect the battery status, and individual factors will affect each other, calculating the battery status becomes a complex problem. For example, the simple open circuit voltage method or coulomb counting method cannot accurately calculate the battery status. Therefore, in current technology, high-dimensional regression calculations, iterative operations, or neural networks (NN) are often combined to increase accuracy. However, the cost of introducing high-dimensional regression calculations, iterative operations, or neural networks is high complexity and high energy consumption. In other words, if a highly complex algorithm is introduced to calculate the battery status, it will accelerate the power consumption of portable electronic products and reduce their battery life.

因此,發展一種低複雜度以及高準確率的電池電量計算系統,是一個重要的設計議題。 Therefore, developing a low-complexity and high-accuracy battery charge calculation system is an important design issue.

本發明一實施例提出一種電池電量計算方法。電池電量計算方法包含取得電池的理想開路電壓曲線,利用放電電流將電池放電,在電池被放電時,偵測N個放電深度對應的N個放電電壓,依據理想開路電壓曲線、放電電流以及N個放電電壓,產生N個放電深度對應的N個內電阻,依據N個內電阻在電池電阻曲線上對應之N個內電阻取樣點的(N-1)個斜率,調整電池電阻曲線上之至少一個內電阻取樣點的分佈,以使N個內電阻取樣點擬合電池電阻曲線,以及於N個內電阻取樣點的分佈被調整後,更新N個內電阻。N為大於2的正整數。 An embodiment of the present invention proposes a battery capacity calculation method. The battery capacity calculation method includes obtaining an ideal open-circuit voltage curve of the battery, discharging the battery with a discharge current, detecting N discharge voltages corresponding to N discharge depths when the battery is discharged, generating N internal resistances corresponding to N discharge depths according to the ideal open-circuit voltage curve, the discharge current, and the N discharge voltages, adjusting the distribution of at least one internal resistance sampling point on the battery resistance curve according to the (N-1) slopes of the N internal resistance sampling points corresponding to the N internal resistances on the battery resistance curve so that the N internal resistance sampling points fit the battery resistance curve, and updating the N internal resistances after the distribution of the N internal resistance sampling points is adjusted. N is a positive integer greater than 2.

本發明另一實施例提出一種電池電量計算系統。電池電量計算系統包含電池、電流偵測電路、電壓偵測電路、記憶體及處理器。電流偵測電路耦接於電池。電壓偵測電路耦接於電池。記憶體用以儲存資料。處理器,耦接於電流偵測電路、電壓偵測電路及記憶體。處理器由記憶體中取得電池的理想開路電壓曲線後,利用放電電流將電池放電。在電池被放電時,處理器控制電壓偵測電路偵測N個放電深度對應的N個放電電壓。放電電流被電流偵測電路偵測。處理器依據理想開路電壓曲線、放電電流以及N個放電電壓,產生N個放電深度對應的N個內電阻。處理器依據N個內電阻在電池電阻曲線上對應之N個內電阻取樣點的(N-1)個斜率,調整電池電阻曲線上之至少一個內電阻取樣點的分佈,以使N個內電阻取樣點擬合電池電阻曲線。處理器於N個內電阻取樣點的分佈被調整後,更新N個內電阻。N為大於2的正整數。 Another embodiment of the present invention provides a battery capacity calculation system. The battery capacity calculation system includes a battery, a current detection circuit, a voltage detection circuit, a memory, and a processor. The current detection circuit is coupled to the battery. The voltage detection circuit is coupled to the battery. The memory is used to store data. The processor is coupled to the current detection circuit, the voltage detection circuit, and the memory. After the processor obtains the ideal open-circuit voltage curve of the battery from the memory, it discharges the battery using a discharge current. When the battery is discharged, the processor controls the voltage detection circuit to detect N discharge voltages corresponding to N discharge depths. The discharge current is detected by the current detection circuit. The processor generates N internal resistors corresponding to N discharge depths according to the ideal open-circuit voltage curve, the discharge current, and N discharge voltages. The processor adjusts the distribution of at least one internal resistor sampling point on the battery resistance curve according to the (N-1) slopes of the N internal resistor sampling points corresponding to the N internal resistors on the battery resistance curve, so that the N internal resistor sampling points fit the battery resistance curve. After the distribution of the N internal resistor sampling points is adjusted, the processor updates the N internal resistors. N is a positive integer greater than 2.

100:電池電量計算系統 100:Battery power calculation system

10:電池 10:Battery

11:電流偵測電路 11: Current detection circuit

12:電壓偵測電路 12: Voltage detection circuit

13:記憶體 13: Memory

14:處理器 14: Processor

COCV:理想開路電壓曲線 C OCV : Ideal open circuit voltage curve

CBAT:開路電壓曲線 C BAT : Open circuit voltage curve

DOD(n):第n個放電深度 DOD(n): nth discharge depth

VOCV(n):第n個理想放電電壓 V OCV (n): nth ideal discharge voltage

VBAT(n):第n個放電電壓 V BAT (n): nth discharge voltage

△V:電壓差 △V: voltage difference

R(n):第n個內電阻 R(n): nth internal resistance

RS(n):第n個內電阻取樣點 RS(n): nth internal resistance sampling point

CR:電池電阻曲線 C R : Battery resistance curve

RS(n-1):第n-1個內電阻取樣點 RS(n-1): the n-1th internal resistance sampling point

RS(n+1):第n+1個內電阻取樣點 RS(n+1): the n+1th internal resistance sampling point

S1、S1’:第一斜率 S1, S1’: first slope

S2、S2’:第二斜率 S2, S2’: Second slope

RS’(m-1):第m-1個內電阻取樣點 RS’(m-1): m-1th internal resistance sampling point

RS’(m+1):第m+1個內電阻取樣點 RS’(m+1): m+1th internal resistance sampling point

RS’(m):第m個內電阻取樣點 RS’(m): mth internal resistance sampling point

DOD(m):第m個放電深度 DOD(m): mth discharge depth

S701至S706:步驟 S701 to S706: Steps

第1圖係為本發明之電池電量計算系統之實施例的方塊圖。 Figure 1 is a block diagram of an embodiment of the battery capacity calculation system of the present invention.

第2圖係為第1圖之電池電量計算系統中,取得第n個理想放電電壓以及第n個放電電壓的示意圖。 Figure 2 is a schematic diagram of obtaining the nth ideal discharge voltage and the nth discharge voltage in the battery capacity calculation system of Figure 1.

第3圖係為第1圖之電池電量計算系統中,取得第n個內電阻的示意圖。 Figure 3 is a schematic diagram of obtaining the nth internal resistance in the battery capacity calculation system of Figure 1.

第4圖係為第1圖之電池電量計算系統中,在第一種模式下,依據兩鄰近斜率調整電池電阻曲線上之至少一個內電阻取樣點的分佈的示意圖。 FIG. 4 is a schematic diagram showing the distribution of at least one internal resistance sampling point on the battery resistance curve adjusted according to two adjacent slopes in the first mode in the battery capacity calculation system of FIG. 1.

第5圖係為第1圖之電池電量計算系統中,在第二種模式下,依據兩鄰近斜率調整電池電阻曲線上之至少一個內電阻取樣點的分佈的示意圖。 FIG5 is a schematic diagram showing the distribution of at least one internal resistance sampling point on the battery resistance curve adjusted according to two adjacent slopes in the battery capacity calculation system of FIG1 in the second mode.

第6圖係為第1圖之電池電量計算系統中,在電池電阻曲線上之N個內電阻取樣點的分佈被調整完成的示意圖。 Figure 6 is a schematic diagram showing the adjustment of the distribution of N internal resistance sampling points on the battery resistance curve in the battery capacity calculation system of Figure 1.

第7圖係為第1圖之電池電量計算系統執行電池電量計算方法的流程圖。 Figure 7 is a flow chart of the battery power calculation system in Figure 1 executing the battery power calculation method.

第1圖係為本發明之電池電量計算系統100之實施例的方塊圖。電池電量計算系統100包含電池10、電流偵測電路11、電壓偵測電路12、記憶體13以及處理器14。電量計算系統100的電池10可為任何種類的電池,例如可充電電池(Rechargeable Battery)、鋰電池或是鎳氫電池等等。電池10也可為電池組(Battery Pack),其包含一組串聯的電池單元。電流偵測電路11耦接於電池10,用以偵測電池10在放電或充電時的電流。電壓偵測電路12耦接於電池10,用以偵測電池10在放電或充電時的兩端點電壓。應當理解的是,電壓偵測電路12可耦接於電池10的正負極兩端點。當電池10為電池組時,電壓偵測電路12也可以透過多工器耦接於電池組中每一個電池單元的正負極兩端點。任何合理的硬體變更都屬 於本發明所揭露的範疇。記憶體13用以儲存資料。處理器14耦接於電流偵測電路11、電壓偵測電路12及記憶體13。處理器14可為任何形式的運算單元,例如中央處理器(Central Processing Unit)或是微處理器(Microprocessor)等等。記憶體13可為快閃記憶體(Flash Memory)或是隨機存取記憶體(Random Access Memory),但不以此為限制。在電池電量計算系統100中,在處理器14由記憶體13中取得電池10的理想開路電壓(Open Circuit Voltage)曲線後,可利用放電電流將電池10放電。在電池10被放電時,處理器14可以控制電壓偵測電路12偵測N個放電深度(Depth of discharge)對應的N個放電電壓。放電電流可被電流偵測電路11偵測。處理器14可以依據理想開路電壓曲線、放電電流以及N個放電電壓,產生N個放電深度對應的N個內電阻。並且,處理器14可依據N個內電阻在電池電阻曲線上對應之N個內電阻取樣點的(N-1)個斜率,調整電池電阻曲線上之至少一個內電阻取樣點的分佈,以使N個內電阻取樣點擬合電池電阻曲線。最後,處理器14可於N個內電阻取樣點的分佈被調整後,更新N個內電阻。N為大於2的正整數。電池電量計算系統100執行電池電量計算方法的細節將於後文詳述。 FIG. 1 is a block diagram of an embodiment of a battery capacity calculation system 100 of the present invention. The battery capacity calculation system 100 includes a battery 10, a current detection circuit 11, a voltage detection circuit 12, a memory 13, and a processor 14. The battery 10 of the capacity calculation system 100 can be any type of battery, such as a rechargeable battery, a lithium battery, or a nickel-hydrogen battery. The battery 10 can also be a battery pack, which includes a group of battery cells connected in series. The current detection circuit 11 is coupled to the battery 10 to detect the current of the battery 10 when it is discharged or charged. The voltage detection circuit 12 is coupled to the battery 10 to detect the voltage at both ends of the battery 10 when it is discharged or charged. It should be understood that the voltage detection circuit 12 can be coupled to the positive and negative ends of the battery 10. When the battery 10 is a battery pack, the voltage detection circuit 12 can also be coupled to the positive and negative ends of each battery cell in the battery pack through a multiplexer. Any reasonable hardware changes belong to the scope disclosed by the present invention. The memory 13 is used to store data. The processor 14 is coupled to the current detection circuit 11, the voltage detection circuit 12 and the memory 13. The processor 14 can be any form of computing unit, such as a central processing unit or a microprocessor. The memory 13 can be a flash memory or a random access memory, but is not limited thereto. In the battery capacity calculation system 100, after the processor 14 obtains the ideal open circuit voltage curve of the battery 10 from the memory 13, the battery 10 can be discharged using the discharge current. When the battery 10 is discharged, the processor 14 can control the voltage detection circuit 12 to detect N discharge voltages corresponding to N discharge depths. The discharge current can be detected by the current detection circuit 11. The processor 14 can generate N internal resistors corresponding to N discharge depths according to the ideal open-circuit voltage curve, the discharge current, and the N discharge voltages. Furthermore, the processor 14 can adjust the distribution of at least one internal resistor sampling point on the battery resistance curve according to the (N-1) slopes of the N internal resistor sampling points corresponding to the N internal resistors on the battery resistance curve, so that the N internal resistor sampling points fit the battery resistance curve. Finally, the processor 14 can update the N internal resistors after the distribution of the N internal resistor sampling points is adjusted. N is a positive integer greater than 2. The details of the battery capacity calculation method executed by the battery capacity calculation system 100 will be described in detail later.

第2圖係為電池電量計算系統100中,取得第n個理想放電電壓VOCV(n)以及第n個放電電壓VBAT(n)的示意圖。如前述提及,處理器14可由記憶體13中取得電池10的理想開路電壓曲線COCV。理想開路電壓曲線COCV可預先設定並儲存於記憶體13內。在其他實施例中,理想開路電壓曲線COCV上的所有理想開路電壓VOCV之方程式或是查詢表(Lookup Table)可預先儲存於記憶體13內。如第2圖所示,理想開路電壓曲線COCV可視為電池10無內電阻時(例如剛出廠的電池),電池10的放電電壓V與放電深度DOD的關係曲線。於此,Y軸為放電電壓V,表示電池10在放電時量測的電壓。X軸為放電深度DOD。放電深度DOD的定義為滿荷電狀態至當前已釋出之電量比。放電深度DOD的範圍在0%到100%之間。在電池電量計算系統100中,處理器14可於記憶體13內取得N個放電深度在理想開路電 壓曲線COCV上對應的N個理想放電電壓。並且,處理器14可依據理想開路電壓曲線COCV、N個放電電壓以及放電電流,產生N個放電深度對應的N個內電阻。舉例而言,在第2圖中,第n個放電深度DOD(n)可為x%。在第n個放電深度DOD(n)下,處理器14可依據理想開路電壓曲線COCV取得第n個理想放電電壓VOCV(n)。並且,處理器14可以控制電壓偵測電路12偵測第n個放電電壓VBAT(n)的實際值。應當理解的是,由於電池10會因為電池會受到充放電速率、溫度、電池老化狀態等等諸多因素影響而產生內電阻,因此其實際的第n個放電電壓VBAT(n)會受到內電阻的影響而小於理想放電電壓VOCV(n)。因此,在取得第n個理想放電電壓VOCV(n)以及第n個放電電壓VBAT(n)後,處理器14可以得出在第n個放電深度DOD(n)下的電壓差△V。因此,電壓差△V可解讀為:因電池放電效能的劣化影響,理想放電電壓VOCV(n)與實際的放電電壓VBAT(n)的差距。並且,第2圖的開路電壓曲線CBAT為實際的量測值,其取樣電壓數值將小於理想開路電壓曲線COCV的取樣電壓數值。 FIG. 2 is a schematic diagram of obtaining the nth ideal discharge voltage V OCV (n) and the nth discharge voltage V BAT (n) in the battery capacity calculation system 100. As mentioned above, the processor 14 can obtain the ideal open circuit voltage curve COCV of the battery 10 from the memory 13. The ideal open circuit voltage curve COCV can be preset and stored in the memory 13. In other embodiments, the equations or lookup tables of all ideal open circuit voltages V OCV on the ideal open circuit voltage curve COCV can be pre-stored in the memory 13. As shown in FIG. 2 , the ideal open circuit voltage curve COCV can be viewed as a curve showing the relationship between the discharge voltage V and the discharge depth DOD of the battery 10 when the battery 10 has no internal resistance (e.g., a battery just out of the factory). Here, the Y-axis is the discharge voltage V, which represents the voltage measured when the battery 10 is discharged. The X-axis is the discharge depth DOD. The discharge depth DOD is defined as the ratio of the fully charged state to the amount of electricity currently discharged. The range of the discharge depth DOD is between 0% and 100%. In the battery charge calculation system 100, the processor 14 can obtain N ideal discharge voltages corresponding to N discharge depths on the ideal open circuit voltage curve COCV in the memory 13. Furthermore, the processor 14 can generate N internal resistors corresponding to N discharge depths according to the ideal open-circuit voltage curve COCV , N discharge voltages, and discharge currents. For example, in FIG. 2, the nth discharge depth DOD(n) can be x%. At the nth discharge depth DOD(n), the processor 14 can obtain the nth ideal discharge voltage V OCV (n) according to the ideal open-circuit voltage curve COCV . Furthermore, the processor 14 can control the voltage detection circuit 12 to detect the actual value of the nth discharge voltage V BAT (n). It should be understood that since the battery 10 will generate internal resistance due to the influence of many factors such as the charge and discharge rate, temperature, battery aging state, etc., its actual n-th discharge voltage V BAT (n) will be affected by the internal resistance and will be smaller than the ideal discharge voltage V OCV (n). Therefore, after obtaining the n-th ideal discharge voltage V OCV (n) and the n-th discharge voltage V BAT (n), the processor 14 can obtain the voltage difference △V at the n-th discharge depth DOD (n). Therefore, the voltage difference △V can be interpreted as: the difference between the ideal discharge voltage V OCV (n) and the actual discharge voltage V BAT (n) due to the degradation of the battery discharge performance. Furthermore, the open circuit voltage curve C BAT in FIG. 2 is an actual measured value, and its sampled voltage value will be smaller than the sampled voltage value of the ideal open circuit voltage curve COCV .

第3圖係為第1圖之電池電量計算系統中,取得第n個內電阻R(n)的示意圖。在取得第n個理想放電電壓VOCV(n)以及第n個放電電壓VBAT(n)後,處理器14可計算出第n個內電阻R(n),表示為:

Figure 113121446-A0305-12-0005-1
FIG. 3 is a schematic diagram of obtaining the nth internal resistance R(n) in the battery capacity calculation system of FIG. 1. After obtaining the nth ideal discharge voltage V OCV (n) and the nth discharge voltage V BAT (n), the processor 14 can calculate the nth internal resistance R(n), which is expressed as:
Figure 113121446-A0305-12-0005-1

其中I為放電電流,可預先設定並由電流偵測電路11偵測。應當理解的是,第n個內電阻R(n)可由移動平均(Moving Average)機制逼近而得,以增加第n個內電阻R(n)的準確度。然而,本發明並不以此為限制。在第n個內電阻R(n)求得後,處理器14可以在第n個放電深度DOD(n)下,標示出電池電阻曲線CR上第n個內電阻取樣點RS(n)。應當理解的是,如前述提及,考慮N個內電阻取樣點RS(1)至RS(N)。電池電量計算系統100的目的在於將電池電阻曲線CR上N個內電阻取樣點RS(1)至RS(N)的分佈最佳化,以使N個內電阻取樣點RS(1)至RS(N)擬合 電池電阻曲線CR。因此當內電阻取樣點RS(1)至RS(N)被更新時,可以產生出非常準確的電池電阻曲線CR以利於計算電池電量。如何調整N個內電阻取樣點RS(1)至RS(N)在電池電阻曲線CR上的分佈,其細節將於後文詳述。 Where I is the discharge current, which can be preset and detected by the current detection circuit 11. It should be understood that the nth internal resistance R(n) can be approximated by a moving average mechanism to increase the accuracy of the nth internal resistance R(n). However, the present invention is not limited to this. After the nth internal resistance R(n) is obtained, the processor 14 can mark the nth internal resistance sampling point RS(n) on the battery resistance curve CR at the nth discharge depth DOD(n). It should be understood that, as mentioned above, N internal resistance sampling points RS(1) to RS(N) are considered. The purpose of the battery capacity calculation system 100 is to optimize the distribution of the N internal resistance sampling points RS(1) to RS(N) on the battery resistance curve CR so that the N internal resistance sampling points RS(1) to RS(N) fit the battery resistance curve CR . Therefore, when the internal resistance sampling points RS(1) to RS(N) are updated, a very accurate battery resistance curve CR can be generated to facilitate the calculation of the battery capacity. The details of how to adjust the distribution of the N internal resistance sampling points RS(1) to RS(N) on the battery resistance curve CR will be described in detail later.

第4圖係為電池電量計算系統100中,在第一種模式下,依據兩鄰近斜率調整電池電阻曲線CR上之至少一個內電阻取樣點的分佈的示意圖。在第4圖中,處理器14可以取得N個內電阻中之第(n-1)個內電阻、第n個內電阻及第(n+1)個內電阻分別在電池電阻曲線CR上對應的第(n-1)個內電阻取樣點RS(n-1)、第n個內電阻取樣點RS(n)及第(n+1)個內電阻取樣點RS(n+1)。第(n-1)個內電阻取樣點RS(n-1)、第n個內電阻取樣點RS(n)及第(n+1)個內電阻取樣點RS(n+1)為在電池電阻曲線CR上三個連續的取樣點。接著,處理器14可以取得第(n-1)個內電阻取樣點RS(n-1)與第n個內電阻取樣點RS(n)的第一斜率S1。第一斜率S1可表示為:

Figure 113121446-A0305-12-0006-2
FIG. 4 is a schematic diagram of adjusting the distribution of at least one internal resistance sampling point on the battery resistance curve CR according to two adjacent slopes in the first mode in the battery capacity calculation system 100. In FIG. 4, the processor 14 can obtain the (n-1)th internal resistance sampling point RS(n-1), the nth internal resistance sampling point RS(n), and the (n+1)th internal resistance sampling point RS (n+1) corresponding to the (n-1)th internal resistance, the nth internal resistance, and the (n+1)th internal resistance among the N internal resistances on the battery resistance curve CR. The (n-1)th internal resistance sampling point RS(n-1), the nth internal resistance sampling point RS(n), and the (n+1)th internal resistance sampling point RS(n+1) are three consecutive sampling points on the battery resistance curve CR . Then, the processor 14 can obtain the first slope S1 of the (n-1)th internal resistance sampling point RS(n-1) and the nth internal resistance sampling point RS(n). The first slope S1 can be expressed as:
Figure 113121446-A0305-12-0006-2

其中第(n-1)個內電阻取樣點RS(n-1)對應第(n-1)個放電深度DOD(n-1),且第(n)個內電阻取樣點RS(n)對應第(n)個放電深度DOD(n)。類似地,處理器14可以取得第(n)個內電阻取樣點RS(n)與第(n+1)個內電阻取樣點RS(n+1)的第二斜率S2。第二斜率S2可表示為:

Figure 113121446-A0305-12-0006-3
The (n-1)th internal resistance sampling point RS(n-1) corresponds to the (n-1)th discharge depth DOD(n-1), and the (n)th internal resistance sampling point RS(n) corresponds to the (n)th discharge depth DOD(n). Similarly, the processor 14 can obtain the second slope S2 of the (n)th internal resistance sampling point RS(n) and the (n+1)th internal resistance sampling point RS(n+1). The second slope S2 can be expressed as:
Figure 113121446-A0305-12-0006-3

其中第(n+1)個內電阻取樣點RS(n+1)對應第(n+1)個放電深度DOD(n+1)。接著,處理器14可以比較第一斜率S1與第二斜率S2,以調整電池電阻曲線CR上之至少一個內電阻取樣點的分佈。舉例而言,處理器14可以設定一個門檻值STH,且門檻值STH為0至1之間的正數。並且,處理器14可以比較第一斜率S1與第二斜率S2,以產生第一斜率S1與第二斜率S2的差異值。在第4圖中,若第一斜率S1與第二斜率S2的差異值小於門檻值STH,表示三個連續的取樣點 RS(n-1)、RS(n)、RS(n+1)的變化不大。因此,電池電阻曲線CR可以利用線性逼近。處理器14可以減少第(n-1)個內電阻取樣點RS(n-1)與第(n+1)個內電阻取樣點RS(n+1)之間的取樣數目,表示如下:

Figure 113121446-A0305-12-0007-4
<S TH The (n+1)th internal resistance sampling point RS(n+1) corresponds to the (n+1)th discharge depth DOD(n+1). Then, the processor 14 can compare the first slope S1 and the second slope S2 to adjust the distribution of at least one internal resistance sampling point on the battery resistance curve CR . For example, the processor 14 can set a threshold value S TH , and the threshold value S TH is a positive number between 0 and 1. In addition, the processor 14 can compare the first slope S1 and the second slope S2 to generate a difference value between the first slope S1 and the second slope S2. In FIG. 4, if the difference between the first slope S1 and the second slope S2 is less than the threshold value S TH , it means that the three consecutive sampling points RS(n-1), RS(n), and RS(n+1) do not change much. Therefore, the battery resistance curve CR can be linearly approximated. The processor 14 can reduce the number of samples between the (n-1)th internal resistance sampling point RS(n-1) and the (n+1)th internal resistance sampling point RS(n+1), as shown below:
Figure 113121446-A0305-12-0007-4
< S TH

第5圖係為電池電量計算系統100中,在第二種模式下,依據兩鄰近斜率調整電池電阻曲線CR上之至少一個內電阻取樣點的分佈的示意圖。在第5圖中,處理器14可以取得N個內電阻中之第(m-1)個內電阻、第m個內電阻及第(m+1)個內電阻分別在電池電阻曲線CR上對應的第(m-1)個內電阻取樣點RS’(m-1)、第m個內電阻取樣點RS’(m)及第(m+1)個內電阻取樣點RS’(m+1)。第(m-1)個內電阻取樣點RS’(m-1)、第m個內電阻取樣點RS’(m)及第(m+1)個內電阻取樣點RS’(m+1)為在電池電阻曲線CR上三個連續的取樣點。接著,處理器14可以取得第(m-1)個內電阻取樣點RS’(m-1)與第m個內電阻取樣點RS’(m)的第一斜率S1’。第一斜率S1’可表示為:

Figure 113121446-A0305-12-0007-5
FIG. 5 is a schematic diagram of the distribution of at least one internal resistance sampling point on the battery resistance curve CR adjusted according to two adjacent slopes in the second mode in the battery capacity calculation system 100. In FIG. 5, the processor 14 can obtain the (m-1)th internal resistance sampling point RS'(m-1), the mth internal resistance sampling point RS'(m), and the (m+1)th internal resistance sampling point RS '(m+1) corresponding to the (m-1)th internal resistance, the mth internal resistance, and the (m+1)th internal resistance among the N internal resistances on the battery resistance curve CR. The (m-1)th internal resistance sampling point RS'(m-1), the mth internal resistance sampling point RS'(m), and the (m+1)th internal resistance sampling point RS'(m+1) are three consecutive sampling points on the battery resistance curve CR . Then, the processor 14 can obtain the first slope S1' of the (m-1)th internal resistance sampling point RS'(m-1) and the mth internal resistance sampling point RS'(m). The first slope S1' can be expressed as:
Figure 113121446-A0305-12-0007-5

其中第(m-1)個內電阻取樣點RS’(m-1)對應第(m-1)個放電深度DOD’(m-1),且第(m)個內電阻取樣點RS’(m)對應第(m)個放電深度DOD’(m)。類似地,處理器14可以取得第(m)個內電阻取樣點RS’(m)與第(m+1)個內電阻取樣點RS’(m+1)的第二斜率S2’。第二斜率S2’可表示為:

Figure 113121446-A0305-12-0007-6
The (m-1)th internal resistance sampling point RS'(m-1) corresponds to the (m-1)th discharge depth DOD'(m-1), and the (m)th internal resistance sampling point RS'(m) corresponds to the (m)th discharge depth DOD'(m). Similarly, the processor 14 can obtain the second slope S2' of the (m)th internal resistance sampling point RS'(m) and the (m+1)th internal resistance sampling point RS'(m+1). The second slope S2' can be expressed as:
Figure 113121446-A0305-12-0007-6

其中第(m+1)個內電阻取樣點RS’(m+1)對應第(m+1)個放電深度DOD’(m+1)。接著,處理器14可以比較第一斜率S1’與第二斜率S2’,以調整電池電阻曲線CR上之至少一個內電阻取樣點的分佈。舉例而言,處理器14可以比較第一斜率S1’與第二斜率S2’,以產生第一斜率S1’與第二斜率S2’的差異值。在第 5圖中,若第一斜率S1’與第二斜率S2’的差異值大於或等於門檻值STH,表示三個連續的取樣點RS’(m-1)、RS’(m)、RS’(m+1)的變化劇烈。因此,電池電阻曲線CR可能在取樣點RS’(m)之處出現轉折。處理器14可以增加第(m-1)個內電阻取樣點RS’(m-1)與第(m+1)個內電阻取樣點RS’(m+1)之間的取樣數目,表示如下:

Figure 113121446-A0305-12-0008-7
S TH The (m+1)th internal resistance sampling point RS'(m+1) corresponds to the (m+1)th discharge depth DOD'(m+1). Then, the processor 14 can compare the first slope S1' and the second slope S2' to adjust the distribution of at least one internal resistance sampling point on the battery resistance curve CR . For example, the processor 14 can compare the first slope S1' and the second slope S2' to generate a difference value between the first slope S1' and the second slope S2'. In FIG. 5, if the difference value between the first slope S1' and the second slope S2' is greater than or equal to the threshold value S TH , it means that the three consecutive sampling points RS'(m-1), RS'(m), and RS'(m+1) change dramatically. Therefore, the battery resistance curve CR may be inflected at the sampling point RS'(m). The processor 14 may increase the number of samples between the (m-1)th internal resistance sampling point RS'(m-1) and the (m+1)th internal resistance sampling point RS'(m+1), as shown below:
Figure 113121446-A0305-12-0008-7
S T

第6圖係為電池電量計算系統100中,在電池電阻曲線CR上之N個內電阻取樣點的分佈被調整完成的示意圖。如前述提及,處理器14可以將N個內電阻取樣點在電池電阻曲線CR所對應的(N-1)個斜率兩兩比較,以調整N個內電阻取樣點的分佈。如第6圖所示,在N個內電阻取樣點的分佈被調整後,在電池電阻曲線CR上的(N-1)個斜率中,鄰近兩斜率的差異值將小於門檻值STH。換句話說,電池電量計算系統100可以用動態距離(Dynamic distance)的方式調整N個內電阻取樣點的分佈。因此,電池電阻曲線CR可用有限的N個內電阻取樣點精準地擬合。也由於電池電阻曲線CR可用有限的N個內電阻取樣點精準地擬合,故當電池電阻曲線CR結合開路電壓法(Open Circuit Voltage,OCV)或是庫倫計數法(Coulomb Counting)等技術時,將會有更精準的電池電量估計結果。例如,當電池電阻曲線CR被產生後,在y%的放電深度下,可以將電壓偵測電路12量測到的放電電壓疊加至由放電電流以及內電阻導出的電壓差上。因此,可以判斷電池10的放電效率或其他應用。 FIG. 6 is a schematic diagram showing that the distribution of N internal resistance sampling points on the battery resistance curve CR in the battery capacity calculation system 100 has been adjusted. As mentioned above, the processor 14 can compare the (N-1) slopes corresponding to the N internal resistance sampling points on the battery resistance curve CR in pairs to adjust the distribution of the N internal resistance sampling points. As shown in FIG. 6, after the distribution of the N internal resistance sampling points is adjusted, the difference between two adjacent slopes of the (N-1) slopes on the battery resistance curve CR will be less than the threshold value S TH . In other words, the battery capacity calculation system 100 can adjust the distribution of the N internal resistance sampling points in a dynamic distance manner. Therefore, the battery resistance curve CR can be accurately fitted with a limited number of N internal resistance sampling points. Also because the battery resistance curve CR can be accurately fitted with a limited number of N internal resistance sampling points, when the battery resistance curve CR is combined with open circuit voltage (OCV) or coulomb counting (Coulomb Counting) and other technologies, there will be a more accurate battery capacity estimation result. For example, when the battery resistance curve CR is generated, at a discharge depth of y%, the discharge voltage measured by the voltage detection circuit 12 can be superimposed on the voltage difference derived from the discharge current and the internal resistance. Therefore, the discharge efficiency of the battery 10 or other applications can be determined.

第7圖係為電池電量計算系統100執行電池電量計算方法的流程圖。電池電量計算方法的流程包含步驟S701至步驟S706。步驟S701至步驟S706描述如下:步驟S701:取得電池10的理想開路電壓曲線COCV;步驟S702:利用放電電流I將電池10放電; 步驟S703:在電池10被放電時,偵測N個放電深度對應的N個放電電壓;步驟S704:依據理想開路電壓曲線COCV、放電電流I以及N個放電電壓,產生N個放電深度對應的N個內電阻;步驟S705:依據N個內電阻在電池電阻曲線CR上對應之N個內電阻取樣點的(N-1)個斜率,調整電池電阻曲線CR上之至少一個內電阻取樣點的分佈,以使N個內電阻取樣點擬合電池電阻曲線CR;步驟S706:於N個內電阻取樣點的分佈被調整後,更新N個內電阻。 FIG. 7 is a flow chart of the battery power calculation method executed by the battery power calculation system 100. The flow chart of the battery power calculation method includes steps S701 to S706. Steps S701 to S706 are described as follows: Step S701: Obtain an ideal open circuit voltage curve COCV of the battery 10; Step S702: Discharge the battery 10 using a discharge current I; Step S703: When the battery 10 is discharged, detect N discharge voltages corresponding to N discharge depths; Step S704: Generate N internal resistances corresponding to N discharge depths based on the ideal open circuit voltage curve COCV , the discharge current I, and the N discharge voltages; Step S705: Adjust the battery resistance curve C R based on the (N-1) slopes of the N internal resistance sampling points corresponding to the N internal resistances on the battery resistance curve C R. R so that the N internal resistance sampling points fit the battery resistance curve CR ; Step S706: after the distribution of the N internal resistance sampling points is adjusted, the N internal resistances are updated.

步驟S701至步驟S706的細節已於前文詳述,故於此將不再贅述。電池電量計算系統100由於可以偵測內電阻,並可最佳化有限的內電阻的分佈,以擬合出失真最小的電池電阻曲線。由於內電阻的數目(N)可以自定義,因此後續在更新內電阻時的複雜度也可以調整。因此,本發明的電池電量計算系統可實現一種可調整複雜度以及高計算準確率的電池電量計算方法。 The details of step S701 to step S706 have been described in detail above, so they will not be repeated here. The battery capacity calculation system 100 can detect the internal resistance and optimize the distribution of the limited internal resistance to fit the battery resistance curve with the least distortion. Since the number of internal resistances (N) can be customized, the complexity of the subsequent update of the internal resistance can also be adjusted. Therefore, the battery capacity calculation system of the present invention can realize a battery capacity calculation method with adjustable complexity and high calculation accuracy.

綜上所述,本發明描述一種電池電量計算方法以及電池電量計算系統。電池電量計算系統可利用理想開路電壓曲線、放電電流以及放電電壓,得出有限個內電阻。並且,電池電量計算系統還可以利用有限個內電阻在電池電阻曲線上之鄰近兩斜率的差異值,判斷是否要調整有限個內電阻的分佈。最終,當在電池電阻曲線上之所有成對鄰近兩斜率的差異值均小於門檻值時,有限個內電阻的分佈可被最佳化。因此,電池電量計算系統可利用有限個內電阻擬合出失真最小的電池電阻曲線。在電池電量計算系統中,由於內電阻的數目可以自定義,因此後續在更新內電阻時的複雜度也可以調整。因此,本發明的電池電量計算系統可實現一種可調整複雜度以及高計算準確率的電池電量計算方法。 In summary, the present invention describes a battery capacity calculation method and a battery capacity calculation system. The battery capacity calculation system can use the ideal open-circuit voltage curve, discharge current and discharge voltage to obtain a finite number of internal resistors. In addition, the battery capacity calculation system can also use the difference between two adjacent slopes of the finite number of internal resistors on the battery resistance curve to determine whether to adjust the distribution of the finite number of internal resistors. Finally, when the difference between all pairs of adjacent slopes on the battery resistance curve is less than a threshold value, the distribution of the finite number of internal resistors can be optimized. Therefore, the battery capacity calculation system can use the finite number of internal resistors to fit a battery resistance curve with minimal distortion. In the battery capacity calculation system, since the number of internal resistors can be customized, the complexity of updating the internal resistors can also be adjusted. Therefore, the battery capacity calculation system of the present invention can realize a battery capacity calculation method with adjustable complexity and high calculation accuracy.

以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。 The above is only the preferred embodiment of the present invention. All equivalent changes and modifications made within the scope of the patent application of the present invention shall fall within the scope of the present invention.

100:電池電量計算系統 100:Battery power calculation system

10:電池 10:Battery

11:電流偵測電路 11: Current detection circuit

12:電壓偵測電路 12: Voltage detection circuit

13:記憶體 13: Memory

14:處理器 14: Processor

Claims (20)

一種電池電量計算方法,包含: 取得一電池的一理想開路電壓(Open Circuit Voltage)曲線; 利用一放電電流將該電池放電; 在該電池被放電時,偵測N個放電深度(Depth of discharge)對應的N個放電電壓; 依據該理想開路電壓曲線、該放電電流以及該N個放電電壓,產生該N個放電深度對應的N個內電阻; 依據該N個內電阻在一電池電阻曲線上對應之N個內電阻取樣點的(N-1)個斜率,調整該電池電阻曲線上之至少一個內電阻取樣點的一分佈,以使該N個內電阻取樣點擬合該電池電阻曲線;及 於該N個內電阻取樣點的該分佈被調整後,更新該N個內電阻; 其中N為大於2的正整數。 A battery capacity calculation method comprises: Obtaining an ideal open circuit voltage curve of a battery; Discharging the battery with a discharge current; Detecting N discharge voltages corresponding to N discharge depths when the battery is discharged; Generating N internal resistances corresponding to the N discharge depths based on the ideal open circuit voltage curve, the discharge current and the N discharge voltages; Adjusting a distribution of at least one internal resistance sampling point on a battery resistance curve based on (N-1) slopes of N internal resistance sampling points corresponding to the N internal resistances on a battery resistance curve, so that the N internal resistance sampling points fit the battery resistance curve; and After the distribution of the N internal resistance sampling points is adjusted, the N internal resistances are updated; wherein N is a positive integer greater than 2. 如請求項1所述之方法,其中該理想開路電壓曲線包含該電池無內電阻時,該電池的一放電電壓與一放電深度的一關係曲線,且該理想開路電壓曲線是預先設定並儲存於一記憶體內。The method as described in claim 1, wherein the ideal open-circuit voltage curve includes a curve of a relationship between a discharge voltage and a discharge depth of the battery when the battery has no internal resistance, and the ideal open-circuit voltage curve is preset and stored in a memory. 如請求項1所述之方法,其中依據該理想開路電壓曲線、該放電電流以及該N個放電電壓,產生該N個放電深度對應的該N個內電阻包含: 取得該N個放電深度在該理想開路電壓曲線上對應的N個理想放電電壓;及 依據該N個理想放電電壓、該N個放電電壓以及該放電電流,產生該N個放電深度對應的該N個內電阻。 The method as described in claim 1, wherein generating the N internal resistances corresponding to the N discharge depths according to the ideal open-circuit voltage curve, the discharge current and the N discharge voltages comprises: obtaining the N ideal discharge voltages corresponding to the N discharge depths on the ideal open-circuit voltage curve; and generating the N internal resistances corresponding to the N discharge depths according to the N ideal discharge voltages, the N discharge voltages and the discharge current. 如請求項3所述之方法,其中該N個內電阻中之一第n個內電阻表示為: 其中I為該放電電流, 為N個理想放電電壓中之一第n個理想放電電壓, 為N個放電電壓中之一第n個放電電壓,且該N個放電深度的一範圍在0%到100%之間。 The method as claimed in claim 3, wherein an nth internal resistor among the N internal resistors is expressed as: Where I is the discharge current, is one of the N ideal discharge voltages, the nth ideal discharge voltage, is an nth discharge voltage among N discharge voltages, and a range of the N discharge depths is between 0% and 100%. 如請求項1所述之方法,其中該N個內電阻之每一個內電阻是利用一移動平均(Moving Average)機制逼近而得。The method as described in claim 1, wherein each of the N internal resistors is approximated using a moving average mechanism. 如請求項1所述之方法,其中依據該N個內電阻在該電池電阻曲線上對應之該N個內電阻取樣點的該(N-1)個斜率,調整該電池電阻曲線上之該至少一個內電阻取樣點的該分佈,以使該N個內電阻取樣點擬合該電池電阻曲線包含: 取得該N個內電阻中之一第(n-1)個內電阻、一第n個內電阻及一第(n+1)個內電阻分別在該電池電阻曲線上對應的一第(n-1)個內電阻取樣點、一第n個內電阻取樣點及一第(n+1)個內電阻取樣點; 取得該第(n-1)個內電阻取樣點與該第n個內電阻取樣點的一第一斜率; 取得該第n個內電阻取樣點與該第(n+1)個內電阻取樣點的一第二斜率;及 比較該第一斜率與該第二斜率,以調整該電池電阻曲線上之該至少一個內電阻取樣點的該分佈; 其中n的一範圍為1至N。 The method as described in claim 1, wherein adjusting the distribution of the at least one internal resistance sampling point on the battery resistance curve according to the (N-1) slopes of the N internal resistance sampling points corresponding to the N internal resistances on the battery resistance curve so that the N internal resistance sampling points fit the battery resistance curve comprises: Obtaining an (n-1)th internal resistance sampling point, an nth internal resistance sampling point and an (n+1)th internal resistance sampling point corresponding to an (n-1)th internal resistance, an nth internal resistance and an (n+1)th internal resistance of the N internal resistances on the battery resistance curve, respectively; Obtaining a first slope of the (n-1)th internal resistance sampling point and the nth internal resistance sampling point; Obtain a second slope of the nth internal resistance sampling point and the (n+1)th internal resistance sampling point; and Compare the first slope with the second slope to adjust the distribution of at least one internal resistance sampling point on the battery resistance curve; Wherein a range of n is 1 to N. 如請求項6所述之方法,另包含: 設定一門檻值; 其中該門檻值為0至1之間的正數。 The method as described in claim 6 further comprises: Setting a threshold value; Wherein the threshold value is a positive number between 0 and 1. 如請求項7所述之方法,其中比較該第一斜率與該第二斜率,以調整該電池電阻曲線上之該至少一個內電阻取樣點的該分佈包含: 比較該第一斜率與該第二斜率,以產生該第一斜率與該第二斜率的一差異值;及 若該差異值大於或等於該門檻值,增加該第(n-1)個內電阻取樣點與該第(n+1)個內電阻取樣點之間的一取樣數目。 The method as described in claim 7, wherein comparing the first slope with the second slope to adjust the distribution of the at least one internal resistance sampling point on the battery resistance curve comprises: Comparing the first slope with the second slope to generate a difference value between the first slope and the second slope; and If the difference value is greater than or equal to the threshold value, increasing a sampling number between the (n-1)th internal resistance sampling point and the (n+1)th internal resistance sampling point. 如請求項7所述之方法,其中比較該第一斜率與該第二斜率,以調整該電池電阻曲線上之該至少一個內電阻取樣點的該分佈包含: 比較該第一斜率與該第二斜率,以產生該第一斜率與該第二斜率的一差異值;及 若該差異值小於該門檻值,減少該第(n-1)個內電阻取樣點與該第(n+1)個內電阻取樣點之間的一取樣數目。 The method as described in claim 7, wherein comparing the first slope with the second slope to adjust the distribution of the at least one internal resistance sampling point on the battery resistance curve comprises: Comparing the first slope with the second slope to generate a difference value between the first slope and the second slope; and If the difference value is less than the threshold value, reducing a sampling number between the (n-1)th internal resistance sampling point and the (n+1)th internal resistance sampling point. 如請求項7所述之方法,其中該N個內電阻取樣點的該分佈被調整後,在該電池電阻曲線上的(N-1)個斜率中,鄰近兩斜率的一差異值小於該門檻值。The method as described in claim 7, wherein after the distribution of the N internal resistance sampling points is adjusted, a difference value between two adjacent slopes among the (N-1) slopes on the battery resistance curve is less than the threshold value. 一種電池電量計算系統,包含: 一電池; 一電流偵測電路,耦接於該電池; 一電壓偵測電路,耦接於該電池; 一記憶體,用以儲存資料;及 一處理器,耦接於該電流偵測電路、該電壓偵測電路及該記憶體; 其中該處理器由該記憶體中取得該電池的一理想開路電壓(Open Circuit Voltage)曲線後,利用一放電電流將該電池放電,在該電池被放電時,該處理器控制該電壓偵測電路偵測N個放電深度(Depth of discharge)對應的N個放電電壓,該放電電流被該電流偵測電路偵測,該處理器依據該理想開路電壓曲線、該放電電流以及該N個放電電壓,產生該N個放電深度對應的N個內電阻,該處理器依據該N個內電阻在一電池電阻曲線上對應之N個內電阻取樣點的(N-1)個斜率,調整該電池電阻曲線上之至少一個內電阻取樣點的一分佈,以使該N個內電阻取樣點擬合該電池電阻曲線,該處理器於該N個內電阻取樣點的該分佈被調整後,更新該N個內電阻,且N為大於2的正整數。 A battery capacity calculation system includes: a battery; a current detection circuit coupled to the battery; a voltage detection circuit coupled to the battery; a memory for storing data; and a processor coupled to the current detection circuit, the voltage detection circuit and the memory; wherein the processor obtains an ideal open circuit voltage curve of the battery from the memory, and discharges the battery with a discharge current. When the battery is discharged, the processor controls the voltage detection circuit to detect N discharge depths. discharge) corresponding to N discharge voltages, the discharge current is detected by the current detection circuit, the processor generates N internal resistances corresponding to the N discharge depths according to the ideal open circuit voltage curve, the discharge current and the N discharge voltages, the processor adjusts a distribution of at least one internal resistance sampling point on a battery resistance curve according to the (N-1) slopes of the N internal resistance sampling points corresponding to the N internal resistances on a battery resistance curve, so that the N internal resistance sampling points fit the battery resistance curve, the processor updates the N internal resistances after the distribution of the N internal resistance sampling points is adjusted, and N is a positive integer greater than 2. 如請求項11所述之系統,其中該理想開路電壓曲線包含該電池無內電阻時,該電池的一放電電壓與一放電深度的一關係曲線,且該理想開路電壓曲線是預先設定並儲存於該記憶體內。A system as described in claim 11, wherein the ideal open-circuit voltage curve includes a relationship curve between a discharge voltage and a discharge depth of the battery when the battery has no internal resistance, and the ideal open-circuit voltage curve is preset and stored in the memory. 如請求項11所述之系統,其中該處理器於該記憶體內取得該N個放電深度在該理想開路電壓曲線上對應的N個理想放電電壓,且該處理器依據該N個理想放電電壓、該N個放電電壓以及該放電電流,產生該N個放電深度對應的該N個內電阻。A system as described in claim 11, wherein the processor obtains N ideal discharge voltages corresponding to the N discharge depths on the ideal open-circuit voltage curve in the memory, and the processor generates the N internal resistances corresponding to the N discharge depths based on the N ideal discharge voltages, the N discharge voltages and the discharge current. 如請求項13所述之系統,其中該N個內電阻中之一第n個內電阻表示為: 其中I為該放電電流, 為N個理想放電電壓中之一第n個理想放電電壓, 為N個放電電壓中之一第n個放電電壓,且該N個放電深度的一範圍在0%到100%之間。 The system of claim 13, wherein an nth internal resistor among the N internal resistors is represented by: Where I is the discharge current, is one of the N ideal discharge voltages, the nth ideal discharge voltage, is an nth discharge voltage among N discharge voltages, and a range of the N discharge depths is between 0% and 100%. 如請求項11所述之系統,其中該N個內電阻之每一個內電阻是利用一移動平均(Moving Average)機制逼近而得。A system as described in claim 11, wherein each of the N internal resistors is approximated using a moving average mechanism. 如請求項11所述之系統,其中該處理器取得該N個內電阻中之一第(n-1)個內電阻、一第n個內電阻及一第(n+1)個內電阻分別在該電池電阻曲線上對應的一第(n-1)個內電阻取樣點、一第n個內電阻取樣點及一第(n+1)個內電阻取樣點,該處理器取得該第(n-1)個內電阻取樣點與該第n個內電阻取樣點的一第一斜率,該處理器取得該第n個內電阻取樣點與該第(n+1)內電阻個取樣點的一第二斜率,該處理器比較該第一斜率與該第二斜率,以調整該電池電阻曲線上之該至少一個內電阻取樣點的該分佈,且n的一範圍為1至N。A system as described in claim 11, wherein the processor obtains an (n-1)th internal resistance sampling point, an nth internal resistance sampling point and an (n+1)th internal resistance sampling point corresponding to an (n-1)th internal resistance sampling point, an nth internal resistance sampling point and an (n+1)th internal resistance sampling point of the N internal resistances, respectively, on the battery resistance curve, the processor obtains a first slope between the (n-1)th internal resistance sampling point and the nth internal resistance sampling point, the processor obtains a second slope between the nth internal resistance sampling point and the (n+1)th internal resistance sampling point, the processor compares the first slope with the second slope to adjust the distribution of the at least one internal resistance sampling point on the battery resistance curve, and n ranges from 1 to N. 如請求項16所述之系統,其中該處理器設定一門檻值,且該門檻值為0至1之間的正數。A system as described in claim 16, wherein the processor sets a threshold value, and the threshold value is a positive number between 0 and 1. 如請求項17所述之系統,其中該處理器比較該第一斜率與該第二斜率,以產生該第一斜率與該第二斜率的一差異值,且若該差異值大於或等於該門檻值,該處理器增加該第(n-1)個內電阻取樣點與該第(n+1)個內電阻取樣點之間的一取樣數目。A system as described in claim 17, wherein the processor compares the first slope and the second slope to generate a difference value between the first slope and the second slope, and if the difference value is greater than or equal to the threshold value, the processor increases a sampling number between the (n-1)th internal resistance sampling point and the (n+1)th internal resistance sampling point. 如請求項17所述之系統,其中該處理器比較該第一斜率與該第二斜率,以產生該第一斜率與該第二斜率的一差異值,且若該差異值小於該門檻值,減少該第(n-1)個內電阻取樣點與該第(n+1)個內電阻取樣點之間的一取樣數目。A system as described in claim 17, wherein the processor compares the first slope and the second slope to generate a difference value between the first slope and the second slope, and if the difference value is less than the threshold value, reduces a sampling number between the (n-1)th internal resistance sampling point and the (n+1)th internal resistance sampling point. 如請求項17所述之系統,其中該N個內電阻取樣點的該分佈被調整後,在該電池電阻曲線上的(N-1)個斜率中,鄰近兩斜率的一差異值小於該門檻值。A system as described in claim 17, wherein after the distribution of the N internal resistance sampling points is adjusted, a difference between two adjacent slopes among the (N-1) slopes on the battery resistance curve is less than the threshold value.
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