TWI877997B - Substrate processing equipment and cleaning device thereof - Google Patents

Abstract

A substrate processing equipment and a cleaning device thereof are provided. The substrate processing equipment includes a substrate holding part and the cleaning device. The substrate holding part is configured to hold the substrate. The cleaning device sprays a process liquid along a path above the substrate and includes a first nozzle and an extension plate. The first nozzle provides the process liquid to the substrate along the path. The extension plate is arranged on a peripheral side of the first nozzle, and the extension plate extends toward an edge direction of the substrate.

Description

Substrate processing equipment and cleaning device thereof

This application is about a substrate processing device and a cleaning device thereof, in particular, a substrate processing device and a cleaning device thereof that can avoid backsplash of the cleaning solution from contaminating the cavity.

In the semiconductor manufacturing process, wafer cleaning is an important process. In particular, if the contamination caused by processes such as wafer cutting or etching is not completely cleaned, the residual contaminants will seriously affect the progress of subsequent processes, ultimately leading to a decrease in chip yield.

In addition, if the cleaning liquid splashes during cleaning, it will cause contamination of the chamber. For example, when the wafer needs to be cleaned, a cleaning liquid, such as deionized water, will be used. If these cleaning liquids splash into the chamber of the cleaning equipment, other chemicals, such as cleaning liquid, etching liquid, etc., will be contaminated, affecting the cleaning or etching process.

However, with the development of semiconductor manufacturing process, the structure of chip becomes more complex, and the line width and line spacing become smaller and smaller, the surface structure tends to be more three-dimensional, and the aspect ratio is greatly improved. In this case, as shown in FIG9, due to the deepening of the groove 72 between the grains 71, or the distance of the nozzle 70 is far, when the fluid is sprayed on the substrate, the high aspect ratio will make the substrate surface no longer flat, which will cause the solution to easily splash. Therefore, a substrate processing equipment and a cleaning device thereof are needed to solve the above-mentioned known problems.

Based on the above purpose, the present application provides a cleaning device, including a first nozzle and an extension plate. The first nozzle provides a process liquid along a path toward a substrate. The extension plate is arranged around the first nozzle, and the extension plate extends toward the edge direction of the substrate.

Preferably, the cleaning device of the present application further comprises a mask and a second nozzle, the mask is connected to the extension plate, and the second nozzle is accommodated in the mask.

Preferably, the second nozzle is connected to the two pipes.

Preferably, the two pipelines are a gas pipeline and a liquid pipeline respectively.

Preferably, the cleaning device of the present application further comprises an extension arm and a driving unit, one end of the extension arm is connected to the driving unit, and the first nozzle and the second nozzle are arranged at the other end of the extension arm.

Preferably, the first nozzle is connected to a deionized water pipeline.

Preferably, the extension plate has an arc-shaped outer periphery.

Preferably, the extension plate has a width of 2 to 10 cm and a length of 2 to 12 cm.

Based on the above purpose, the present application further provides a substrate processing device, including a substrate holding part and a cleaning device. The substrate holding part is used to hold the substrate. The cleaning device sprays a process liquid along a path above the substrate and includes a first nozzle and an extension plate. The first nozzle provides a process liquid along a path toward the substrate. The extension plate is arranged around the first nozzle, and the extension plate extends toward the edge direction of the substrate.

Preferably, the cleaning device further includes a mask and a second nozzle, the mask is connected to the extension plate, and the second nozzle is accommodated in the mask.

Preferably, the second nozzle is connected to the two pipes.

Preferably, the two pipelines are a gas pipeline and a liquid pipeline respectively.

Preferably, the cleaning device further comprises an extension arm and a driving unit, one end of the extension arm is connected to the driving unit, and the first nozzle and the second nozzle are arranged at the other end of the extension arm.

This application provides a substrate processing device and a cleaning device thereof. In this application, even if there are deeper grooves between the crystal grains, or the distance between the nozzle and the crystal grains is far, this application can still prevent the backsplash of the cleaning solution, thereby preventing the chamber from being contaminated during cleaning.

1: Substrate processing equipment

10: Cleaning device

101: First nozzle

102: Extension plate

1021: Extension plate side wall

103:Mask

1031: Shielding side wall

104: Second nozzle

105: First pipeline

106: Second pipeline

107: Third pipeline

108: Extension arm

109: Drive unit

110: Path

20: Substrate

201: Grain

202: Groove

30: Substrate holding part

31: Rotating plate

32: Recycling Ring

70: Spray nozzle

71: Grain

72: Groove

Figure 1 is a schematic diagram of a substrate processing device according to an embodiment of the present application.

Figure 2 is a first schematic diagram of a cleaning device according to an embodiment of the present application.

Figure 3 is a second schematic diagram of a cleaning device according to an embodiment of the present application.

Figure 4 is a bottom view of the cleaning device according to an embodiment of the present application.

Figure 5 is a top view of a cleaning device according to an embodiment of the present application.

Figure 6 is a schematic diagram of the first cleaning according to the embodiment of this application.

Figure 7 is a schematic diagram of the second cleaning according to the embodiment of this application.

Figure 8 is a schematic diagram of the third cleaning process according to the embodiment of this application.

Figure 9 is a schematic diagram of cleaning according to known techniques.

In order to help the examiner understand the technical features, content and advantages of this application and the effects it can achieve, this application is described in detail as follows with the attached drawings and in the form of an embodiment. The drawings used therein are only for illustration and auxiliary explanation purposes, and may not be the actual proportions and precise configurations after the implementation of this application. Therefore, the proportions and configurations of the attached drawings should not be interpreted to limit the scope of rights of this application in actual implementation. It should be stated in advance.

The following will refer to the relevant drawings to illustrate the embodiments of the present application. For ease of understanding, the same elements in the following embodiments are illustrated with the same symbols.

As shown in FIG. 1 , the present application provides a substrate processing device 1, which includes a substrate holding portion 30 and a cleaning device 10. The substrate holding portion 30 is used to hold a substrate 20. The cleaning device 10 sprays a process liquid along a path above the substrate 20 to clean the substrate 20.

In one embodiment, the substrate 20 may be a wafer product. Specifically, general 3D-IC wafer stacking can be divided into three technologies: (1) chip to chip (C2C) stacking, (2) chip to wafer (C2W) stacking, and (3) wafer to wafer (W2W) stacking. Wafer stacking will result in an uneven wafer surface with a high aspect ratio.

In one embodiment, the substrate holding portion 30 includes a rotating disk 31 and a recovery ring 32 surrounding the rotating disk 31. The rotating disk 31 is used to hold the substrate 20 thereon. For example, the substrate 20 can be adsorbed on the rotating disk 31 by vacuum adsorption, or the substrate can be clamped and fixed on the rotating disk 31 by a clamping mechanism, but it is not limited thereto.

When the substrate 20 is processed by the substrate processing device 1, the substrate 20 is first held on the rotating disk 31, and then the cleaning device 10 sprays a process liquid (such as etching liquid, cleaning liquid, deionized water, etc.) along a path above the substrate 20 to clean the substrate 20.

The recovery ring 32 can recover process liquids such as etching liquid and cleaning liquid, and the purpose of this application is to prevent the cleaning liquid, such as deionized water, from back-splashing and contaminating the recovery ring 32 when the cleaning device 10 cleans the substrate 20, thereby reducing the recovery efficiency of process liquids such as etching liquid and cleaning liquid.

To further explain, the cleaning device 10 sprays a process liquid along a path 110 above the substrate 20, and the process liquid includes an etching liquid, a cleaning liquid, deionized water, etc. As shown in Figures 2 to 5, the cleaning device 10 includes a first nozzle 101, a second nozzle 104, a mask 103, and an extension plate 102.

In one embodiment, as can be seen from FIG. 2 to FIG. 5, the first nozzle 101 is connected to the first pipeline 105, which can be a deionized water pipeline, and the second nozzle 104 is connected to two pipelines, which are the second pipeline 106 and the third pipeline 107, respectively. The second pipeline 106 can be a gas pipeline, and the third pipeline 107 can be a liquid pipeline. The gas pipeline can provide gas, such as highly clean air, nitrogen, other passivation gases, etc., and the third pipeline 107 can provide cleaning liquid, etching liquid and other solutions to facilitate the cleaning of the substrate 20, but it is not limited to this. The second pipeline 106 and the third pipeline 107 can also provide liquid, or one of them can provide deionized water.

In addition, as shown in Figures 2 to 5, the cleaning device 10 further includes an extension arm 108 and a driving unit 109. One end of the extension arm 108 is connected to the driving unit 109, and the first nozzle 101 and the second nozzle 104 are arranged at the other end of the extension arm 108. Therefore, the driving unit 109 can make the cleaning device 10 spray the process liquid along a preset path above the substrate 20. In addition, when the cleaning device 10 is not needed, the driving unit 109 can also make the cleaning device 10 return to the standby position to avoid interfering with the substrate 20.

In one embodiment, the shield 103 and the extension plate 102 can be integrally provided, but not limited thereto, and the two can also be provided in other ways. In addition, in one embodiment, as shown in FIGS. 6 to 8 , the shield 103 can also include a shield side wall 1031 to prevent the fluid provided by the second nozzle 104 accommodated in the shield 103 from splashing.

In one embodiment, as shown in any one of Figures 1 to 5, the extension plate 102 has an arc-shaped outer periphery, which can reduce stress concentration, thereby reducing the damage caused by the extension plate 102 colliding with other objects when control or other accidents occur.

To further explain, the width of the extension plate 102 is between 2 and 10 cm, and the length is between 2 and 12 cm; in a preferred embodiment, the width of the extension plate 102 is between 4 and 6 cm, and the length is between 3 and 5 cm; in a best embodiment, the width of the extension plate 102 is about 5 cm, and the length is about 4 cm.

In one embodiment, as shown in FIG. 1 , the second nozzle 104 can be along the cleaning path 110, for example, the cleaning device 10 can provide cleaning liquid and gas toward the substrate 20 along the arc path 110 above the substrate 20 to clean the substrate 20, and at the same time, the first nozzle 101 can provide deionized water (DI water) to the substrate 20, but not limited to this. At this time, the cleaning liquid may cause splashing and contaminate the chamber of the substrate processing device 1.

Therefore, referring to Figures 6 to 8, the extension plate 102 disposed around the first nozzle 101 can prevent the splashing of the cleaning solution. Further, the extension plate 102 extends toward the edge of the substrate 20, thereby preventing the cleaning solution from splashing toward the recovery ring 32 of the substrate processing device 1 in Figure 1.

To further explain, in this embodiment, the distance between the first nozzle 101 and the second nozzle 104 and the substrate 20 may be 10 mm, but is not limited thereto. In this embodiment, the substrate 20 may be a wafer product with a high aspect ratio formed by (1) chip to chip (C2C) stacking, (2) chip to wafer (C2W) stacking, and (3) wafer to wafer (W2W) stacking, so there are trenches 202 between the dies 201 on the substrate 20. It is worth mentioning that the trenches 202 may be generated by the above-mentioned chip stacking, or may be generated by cutting due to process requirements. Due to the formation of the deeper groove 202, the surface of the substrate 20 is no longer flat, resulting in the occurrence of splashing. Although the mask 103 with the mask sidewall 1031 has the effect of preventing splashing, due to the high aspect ratio of the wafer product, splashing of the cleaning solution will still occur during cleaning, so it is necessary to add an extension plate 102 to solve this problem.

In other embodiments, if only the first nozzle 101 is used to provide deionized water to rinse the above-mentioned high aspect ratio wafer product, the extension plate 102 can still prevent the deionized water from splashing on the recovery ring 32 of the substrate processing equipment 1.

To further explain, in this embodiment, the distance between the first nozzle 101 and the substrate 20 will be greater than 10 mm, and the splashing problem will be more serious at this time, and the mask 103 cannot produce any mitigation effect on the splashing caused by the fluid provided by the first nozzle 101, so the extension plate 102 is required to solve the splashing problem.

In one embodiment, the extension plate 102 may have different shapes. For example, in addition to the above-mentioned plate shape, as shown in FIG7 , the extension plate 102 may further include an extension plate sidewall 1021. In addition, in other embodiments, the material or surface of the extension plate 102 may be adjusted. For example, the extension plate 102 may be formed of a porous material or a water-absorbing material. In addition, as shown in FIG8 , the surface of the extension plate 102 facing the substrate 20 may be set to an arc shape to prevent backsplash.

In summary, in this application, even if there are deeper grooves between the dies or the distance between the nozzle and the dies is far, this application can still prevent the backsplash of the cleaning solution, thereby preventing the cavity from being contaminated during cleaning.

The above description is for illustrative purposes only and is not intended to be limiting. Any equivalent modifications or changes made to this application without departing from the spirit and scope of this application shall be included in the scope of the patent application attached hereto.

10: Cleaning device

102: Extension plate

103:Mask

105: First pipeline

106: Second pipeline

107: Third pipeline

108: Extension arm

Claims (11)

A cleaning device comprises: a first nozzle providing a process liquid along a path toward a substrate; an extension plate disposed around the first nozzle, the extension plate extending toward an edge of the substrate; a mask; and a second nozzle, wherein the mask is connected to a side of the extension plate, and the second nozzle is accommodated in the mask. A cleaning device as described in claim 1, wherein the second nozzle is connected to two pipes. A cleaning device as described in claim 2, wherein the two pipelines are respectively a gas pipeline and a liquid pipeline. The cleaning device as described in claim 3 further includes an extension arm and a driving unit, one end of the extension arm is connected to the driving unit, and the first nozzle and the second nozzle are arranged at the other end of the extension arm. A cleaning device as described in claim 1, wherein the first nozzle is connected to a deionized water pipeline. A cleaning device as described in claim 1, wherein the extension plate has a circular arc-shaped outer periphery. A cleaning device as described in claim 1, wherein the width of the extension plate is between 2 and 10 centimeters and the length is between 2 and 12 centimeters. A substrate processing device comprises: a substrate holding portion for holding a substrate; and a cleaning device for spraying a process liquid along a path above the substrate, and comprising: a first nozzle for providing the process liquid along a path toward the substrate; an extension plate disposed around the first nozzle, the extension plate extending toward an edge of the substrate; a mask; and a second nozzle, wherein the mask is connected to a side of the extension plate, and the second nozzle is accommodated in the mask. A substrate processing apparatus as described in claim 8, wherein the second nozzle is connected to two pipes. The substrate processing equipment as described in claim 9, wherein the two pipelines are respectively a gas pipeline and a liquid pipeline. The substrate processing equipment as described in claim 10, wherein the cleaning device further includes an extension arm and a driving unit, one end of the extension arm is connected to the driving unit, and the first nozzle and the second nozzle are arranged at the other end of the extension arm.