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TWM657863U - Substrate processing apparatus with recycling device - Google Patents

Substrate processing apparatus with recycling device Download PDF

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Publication number
TWM657863U
TWM657863U TW113202846U TW113202846U TWM657863U TW M657863 U TWM657863 U TW M657863U TW 113202846 U TW113202846 U TW 113202846U TW 113202846 U TW113202846 U TW 113202846U TW M657863 U TWM657863 U TW M657863U
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Taiwan
Prior art keywords
ring
recovery
substrate processing
recovery device
wall
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TW113202846U
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Chinese (zh)
Inventor
陳建勝
吳宗恩
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弘塑科技股份有限公司
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Priority to TW113202846U priority Critical patent/TWM657863U/en
Publication of TWM657863U publication Critical patent/TWM657863U/en

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Abstract

A substrate processing apparatus with a recycling device is disclosed. The apparatus includes a spin chuck, a liquid supply device, and the recycling device. The spin chuck is designed for the placement of a substrate. The liquid supply device is positioned above the spin chuck to apply a plurality of process liquids to the substrate. The plurality of process liquids include a first process liquid and a second process liquid. The recycling device is configured to reclaim the first process liquid and the second process liquid and includes a first recycling ring and a second recycling ring. The first recycling ring is disposed around the spin chuck and is vertically movable relative to the spin chuck. The second recycling ring is disposed around the spin chuck, positioned below the first recycling ring, and is vertically movable relative to the spin chuck.

Description

具備回收裝置之基板處理設備Substrate processing equipment with recovery device

本申請是關於一種具備回收裝置之基板處理設備,特別是關於可依序回收清洗基板時之製程液體的基板處理設備。The present application relates to a substrate processing device with a recovery device, and in particular to a substrate processing device that can sequentially recover process liquids used to clean a substrate.

在半導體製程中,晶圓的清洗是一重要製程,尤其在晶圓切割或蝕刻等製程所造成的污染若是未完全清洗乾淨,此殘餘污染物會嚴重影響後續製程的進行,最終導致晶片良率下降。In the semiconductor manufacturing process, wafer cleaning is an important process. In particular, if the contamination caused by processes such as wafer cutting or etching is not completely cleaned, the residual contaminants will seriously affect the progress of subsequent processes, ultimately resulting in a decrease in chip yield.

另外,清洗時如果清潔液會產生飛濺,將造成腔體的污染。舉例來說,當晶圓需要清洗時,會需要使用清洗液體,例如去離子水。這些清洗液體如果飛濺至清洗設備上的裝置,例如回收環,將會使得其他藥水,例如清洗藥水、蝕刻藥水等化學品遭受污染,使得清洗或蝕刻製程遭受影響。In addition, if the cleaning liquid splashes during cleaning, it will cause contamination of the chamber. For example, when a wafer needs to be cleaned, a cleaning liquid, such as deionized water, will be used. If these cleaning liquids splash onto the devices on the cleaning equipment, such as the recovery ring, other chemicals, such as cleaning liquid, etching liquid, etc., will be contaminated, affecting the cleaning or etching process.

然而,隨著半導體製程的演進,晶片之結構漸趨複雜、且線寬與線距越來越細小,表面結構更趨立體化,高深寬比大幅提升。在這種情況之下,如圖1所示,由於晶粒71之間的溝槽72變深,當液體透過噴頭70噴灑在基板上時,由於高深寬比將會使得基板表面不再平整,將導致液體容易產生噴濺。再者,習知導體製程的回收環81、82之開口尺寸是固定的,並於垂直方向作同步移動,因此開口無法關閉,造成相鄰回收環在回收液體時,容易彼此產生交叉污染,所以不適用於晶圓表面元件高低差較大之半導體製程。因此,需要一種具備回收裝置之基板處理設備以解決上述問題。However, with the development of semiconductor manufacturing process, the structure of chip becomes more complex, and the line width and line spacing become smaller and smaller, the surface structure becomes more three-dimensional, and the aspect ratio is greatly improved. In this case, as shown in FIG1, since the groove 72 between the grains 71 becomes deeper, when the liquid is sprayed on the substrate through the nozzle 70, the substrate surface will no longer be flat due to the aspect ratio, which will cause the liquid to easily splash. Furthermore, the opening size of the recovery rings 81 and 82 of the known conductor process is fixed, and they move synchronously in the vertical direction, so the opening cannot be closed, causing adjacent recovery rings to easily cross-contaminate each other when recovering liquid, so it is not suitable for semiconductor processes with large height differences of components on the wafer surface. Therefore, a substrate processing device with a recycling device is needed to solve the above problems.

為解決上述習知技術的問題,本申請提供一種具備回收裝置之基板處理設備,其包含旋轉台、液體供應裝置以及回收裝置。旋轉台用以放置基板;液體供應裝置設置於該旋轉台上方,對基板施加複數個製程液體,複數個製程液體包含第一製程液體及第二製程液體;回收裝置用以回收第一製程液體及第二製程液體,且包含第一回收環及第二回收環;第一回收環環繞地設置在旋轉台的周圍,且相對於旋轉台於垂直方向移動;第二回收環環繞地設置在旋轉台的周圍,配置於第一回收環下方,且相對於旋轉台作垂直方向移動。第一回收環及第二回收環依序於垂直方向上移動,並依序形成第一開口及第二開口。第一開口形成於第一回收環及第二回收環之間,第二開口形成於第二回收環及旋轉台之間。In order to solve the above problems of the prior art, the present application provides a substrate processing device with a recovery device, which includes a turntable, a liquid supply device and a recovery device. The turntable is used to place a substrate; the liquid supply device is arranged above the turntable, and applies a plurality of process liquids to the substrate, and the plurality of process liquids include a first process liquid and a second process liquid; the recovery device is used to recover the first process liquid and the second process liquid, and includes a first recovery ring and a second recovery ring; the first recovery ring is arranged around the turntable and moves in a vertical direction relative to the turntable; the second recovery ring is arranged around the turntable, configured below the first recovery ring, and moves in a vertical direction relative to the turntable. The first recycling ring and the second recycling ring move in the vertical direction in sequence and form a first opening and a second opening in sequence. The first opening is formed between the first recycling ring and the second recycling ring, and the second opening is formed between the second recycling ring and the rotating table.

在本申請具備回收裝置之基板處理設備的較佳實施例中,第一回收環具有第一環壁及止擋壁,第一環壁之一端鄰近旋轉台,另一端與止擋壁相連接。In a preferred embodiment of the substrate processing equipment with a recovery device of the present application, the first recovery ring has a first ring wall and a stop wall, one end of the first ring wall is adjacent to the turntable, and the other end is connected to the stop wall.

在本申請具備回收裝置之基板處理設備的較佳實施例中,第一環壁相對於旋轉台呈傾斜設置。In a preferred embodiment of the substrate processing equipment with a recovery device of the present application, the first annular wall is inclined relative to the turntable.

在本申請具備回收裝置之基板處理設備的較佳實施例中,第一環壁之第一厚度沿著遠離旋轉台的方向漸增。In a preferred embodiment of the substrate processing apparatus with a recovery device of the present application, the first thickness of the first ring wall gradually increases in a direction away from the turntable.

在本申請具備回收裝置之基板處理設備的較佳實施例中,第二回收環具有第二環壁、第三環壁及第四環壁,第三環壁位於第二環壁及第四環壁之間,第二環壁較第三環壁及第四環壁鄰近旋轉台。In a preferred embodiment of the substrate processing equipment with a recovery device of the present application, the second recovery ring has a second ring wall, a third ring wall and a fourth ring wall, the third ring wall is located between the second ring wall and the fourth ring wall, and the second ring wall is closer to the turntable than the third ring wall and the fourth ring wall.

在本申請具備回收裝置之基板處理設備的較佳實施例中,第二環壁之第二厚度沿著遠離旋轉台的方向漸增。In a preferred embodiment of the substrate processing apparatus with a recovery device of the present application, the second thickness of the second ring wall gradually increases in a direction away from the turntable.

在本申請具備回收裝置之基板處理設備的較佳實施例中,當第一開口形成時,第二環壁與旋轉台側邊緊配,第二開口閉合。In a preferred embodiment of the substrate processing equipment with a recovery device of the present application, when the first opening is formed, the second annular wall is tightly matched with the side of the turntable, and the second opening is closed.

在本申請具備回收裝置之基板處理設備的較佳實施例中該第一環壁與第二環壁相接觸密合,第一開口閉合。In a preferred embodiment of the substrate processing equipment with a recovery device of the present application, the first annular wall and the second annular wall are in close contact and the first opening is closed.

在本申請具備回收裝置之基板處理設備的較佳實施例中,第三環壁及第四環壁朝向不同方向傾斜,並形成開口朝向止擋壁之第一凹槽。In a preferred embodiment of the substrate processing equipment with a recovery device of the present application, the third annular wall and the fourth annular wall are inclined in different directions and form a first groove with an opening toward the stop wall.

在本申請具備回收裝置之基板處理設備的較佳實施例中,當第一回收環於垂直方向上移動至最高位置且第二回收環位於最低位置時,第一製程液體自第一開口流入第一回收環及第二回收環之間。In a preferred embodiment of the substrate processing equipment with a recovery device of the present application, when the first recovery ring moves to the highest position in the vertical direction and the second recovery ring is at the lowest position, the first process liquid flows from the first opening into between the first recovery ring and the second recovery ring.

較佳地,本申請之具備回收裝置之基板處理設備更包含第一回收管路及第一回收裝置,第一製程液體由第一回收環及第二回收環之間流向第一回收管路,並由第一回收裝置回收。Preferably, the substrate processing equipment with a recovery device of the present application further includes a first recovery pipeline and a first recovery device, and the first process liquid flows from between the first recovery ring and the second recovery ring to the first recovery pipeline and is recovered by the first recovery device.

較佳地,本申請之具備回收裝置之基板處理設備更包含固定環壁,固定環壁設置於回收裝置下方,且形成開口朝向回收裝置之第二凹槽。Preferably, the substrate processing equipment with a recovery device of the present application further includes a fixed ring wall, which is arranged below the recovery device and forms a second groove with an opening facing the recovery device.

較佳地,當第一回收環及第二回收環於垂直方向上移動至最高位置時,第二製程液體自第二開口流向第二凹槽。Preferably, when the first recovery ring and the second recovery ring move to the highest position in the vertical direction, the second process liquid flows from the second opening to the second groove.

較佳地,本申請之具備回收裝置之基板處理設備更包含第二回收管路及第二回收裝置,第二製程液體由第二凹槽流向第二回收管路,並由第二回收裝置回收。Preferably, the substrate processing equipment with a recovery device of the present application further includes a second recovery pipeline and a second recovery device, and the second process liquid flows from the second groove to the second recovery pipeline and is recovered by the second recovery device.

較佳地,本申請之具備回收裝置之基板處理設備更包含驅動馬達,驅動馬達驅動旋轉台旋轉,且設置於旋轉台下方。Preferably, the substrate processing equipment with a recovery device of the present application further includes a drive motor, which drives the turntable to rotate and is disposed under the turntable.

較佳地,本申請之具備回收裝置之基板處理設備更包含升降驅動裝置,升降驅動裝置驅動第一回收環及該第二回收環於垂直方向進行升降移動。Preferably, the substrate processing equipment with a recovery device of the present application further includes a lifting drive device, which drives the first recovery ring and the second recovery ring to move up and down in the vertical direction.

在本申請中,回收裝置除了可以在垂直方向升降以進行製程藥水的回收之外,在以去離子水(Deionized Water, DI Water)清洗晶圓時,位於底部的回收環可以向上移動與上部的回收環將兩者之間的藥水回收口密合,因而可以防止去離子水由旋轉晶圓表面噴賤到其他相鄰的藥水回收口。因此,在本申請中,由藥水回收環所收集之藥水不易被污染,而後可流至對應的回收管路,以利後續的回收或排放,而去離子水可以直接經由對應的廢水回收管進行收集,兩者分別以不同管路回收,進而避免回收藥水及廢水交叉污染之問題。In this application, in addition to being able to rise and fall in the vertical direction to recycle process chemicals, when washing wafers with deionized water (DI Water), the recovery ring at the bottom can move upward to seal the chemical recovery port between the two with the recovery ring at the top, thereby preventing the deionized water from spraying from the rotating wafer surface to other adjacent chemical recovery ports. Therefore, in this application, the chemical collected by the chemical recovery ring is not easily contaminated, and can then flow to the corresponding recovery pipeline to facilitate subsequent recovery or discharge, and the deionized water can be directly collected through the corresponding waste water recovery pipe. The two are recovered in different pipelines, thereby avoiding the problem of cross contamination between the recovered chemical and the waste water.

為利於瞭解本申請之技術特徵、內容與優點及其所能達成之功效,茲將本申請配合附圖,並以實施例詳細說明如下,其中所使用之圖式僅為示意及輔助說明之用,未必為本申請之真實比例與精準配置,故不應以圖式的比例與配置關係解讀、侷限本申請於實際實施上的權利範圍。以下將參照相關圖式,說明依本申請之實施例,為便於理解,下述實施例中相同元件係以相同之符號標示說明。In order to facilitate understanding of the technical features, content and advantages of this application and the effects that can be achieved, this application is hereby accompanied by the attached drawings and described in detail with embodiments as follows. The drawings used are only for illustration and auxiliary explanation purposes, and may not be the true proportions and precise configurations of this application. Therefore, the proportions and configurations of the drawings should not be used to interpret or limit the scope of rights of this application in actual implementation. The following will refer to the relevant drawings to describe the embodiments of this application. For ease of understanding, the same components in the following embodiments are marked with the same symbols.

參考圖2,其為根據本申請之實施例之基板處理設備之第一俯視圖。在本申請中,基板2可為晶圓產品,由於現今半導體製程的複雜化,且因晶圓切割與結構堆疊等原因,基板2形成不平整的表面。如圖2之實施例中,基板2包括存在三維晶片(3D Integrated Circuit , 3D-IC)堆疊結構,一般3D-IC 晶圓堆疊可分為:(1)晶片對晶片(Chip to Chip;C2C)堆疊、(2)晶片對晶圓(Chip to Wafer;C2W)堆疊;以及(3)晶圓對晶圓(Wafer to Wafer;W2W)堆疊等三種技術,晶圓堆疊會造成表面具有高深寬比(High Aspect Ratio)不平坦的晶圓表面。Refer to FIG. 2 , which is a first top view of a substrate processing device according to an embodiment of the present application. In the present application, the substrate 2 may be a wafer product. Due to the complexity of current semiconductor manufacturing processes, and due to wafer cutting and structure stacking, the substrate 2 forms an uneven surface. As shown in the embodiment of FIG. 2 , the substrate 2 includes a three-dimensional chip (3D Integrated Circuit, 3D-IC) stacking structure. Generally, 3D-IC wafer stacking can be divided into three technologies: (1) chip to chip (C2C) stacking, (2) chip to wafer (C2W) stacking, and (3) wafer to wafer (W2W) stacking. Wafer stacking will cause the surface of the wafer to have an uneven surface with a high aspect ratio (High Aspect Ratio).

當對表面不平整的基板2進行清洗製程時,製程液體(例如去離子水(Deionized Water, DI Water)、清洗藥水等)容易產生飛濺,而清洗藥水,例如蝕刻液等具有較高的成本,若是在回收裝置未設置完善的情況下,不同的製程液體將有可能交叉污染,舉例來說,去離子水的噴濺可能污染用以回收清洗藥水的回收單元,此時將會使得清洗藥水的回收效益降低。When a cleaning process is performed on a substrate 2 with an uneven surface, the process liquid (e.g., deionized water (DI Water), cleaning solution, etc.) is prone to splashing, and cleaning solutions, such as etching solutions, have a relatively high cost. If the recovery device is not well-equipped, different process liquids may be cross-contaminated. For example, the splashing of deionized water may contaminate the recovery unit used to recover the cleaning solution, which will reduce the recovery efficiency of the cleaning solution.

如圖2所示,本申請提供一種具回收裝置30之基板處理設備1,基板處理設備1包含旋轉台10、液體供應裝置20以及回收裝置30。旋轉台10用以放置基板2,液體供應裝置20設置於旋轉台10上,對基板2施加複數個製程液體,而複數個製程液體包含第一製程液體及第二製程液體。在一實施例中,第一製程液體可為蝕刻或清洗藥水,第二製程液體可為去離子水。As shown in FIG. 2 , the present application provides a substrate processing device 1 with a recovery device 30, the substrate processing device 1 comprises a rotating table 10, a liquid supply device 20 and a recovery device 30. The rotating table 10 is used to place a substrate 2, the liquid supply device 20 is disposed on the rotating table 10, and a plurality of process liquids are applied to the substrate 2, and the plurality of process liquids include a first process liquid and a second process liquid. In one embodiment, the first process liquid can be an etching or cleaning liquid, and the second process liquid can be deionized water.

另外,在圖2中,雖僅繪示一液體供應裝置20,但液體供應裝置20的數量不限於只有一個,可依據需求進行調整。In addition, although only one liquid supply device 20 is shown in FIG. 2 , the number of liquid supply devices 20 is not limited to only one and can be adjusted according to demand.

進一步說明,回收裝置30可以回收液體(例如上述的製程液體),亦可包含有收集廢氣(例如因清洗基板2時所產生的廢氣或是水氣等)的部件,在本申請的圖式中,僅有繪示回收液體的部件。To further explain, the recovery device 30 can recover liquid (such as the process liquid mentioned above), and may also include components for collecting waste gas (such as waste gas or water vapor generated when cleaning the substrate 2). In the drawings of this application, only components for recovering liquid are shown.

如圖3所示,本申請的基板處理設備1更包含驅動馬達60,驅動馬達60可以透過旋轉軸與旋轉台10相連接,以驅動旋轉台10旋轉。因此,當基板2被清洗時,製程液體將會因離心力朝向基板外圍移動,而回收裝置30可以回收第一製程液體及第二製程液體,且包含有第一回收環301及第二回收環302,在其他實施例中,還可包含有更多數量的回收環。As shown in FIG3 , the substrate processing apparatus 1 of the present application further includes a driving motor 60, which can be connected to the rotating table 10 via a rotating shaft to drive the rotating table 10 to rotate. Therefore, when the substrate 2 is cleaned, the process liquid will move toward the periphery of the substrate due to the centrifugal force, and the recovery device 30 can recover the first process liquid and the second process liquid, and includes a first recovery ring 301 and a second recovery ring 302. In other embodiments, more recovery rings may be included.

在一實施例中,本申請的基板處理設備1更包含升降驅動裝置50,升降驅動裝置50可以包含單一或複數個驅動單元,例如伺服馬達,以分別驅動第一回收環301及第二回收環302於垂直方向上移動。換言之,在本申請中,第一回收環301及第二回收環302為獨立運動,而非同步運動,因此可以依序於垂直方向上移動。In one embodiment, the substrate processing apparatus 1 of the present application further comprises a lifting drive device 50, which may comprise a single or multiple drive units, such as servo motors, to drive the first recycling ring 301 and the second recycling ring 302 to move in the vertical direction respectively. In other words, in the present application, the first recycling ring 301 and the second recycling ring 302 move independently, rather than synchronously, and thus can move in the vertical direction sequentially.

進一步說明,如圖3所示,第一回收環301及第二回收環302環繞設置旋轉台10的周圍,第二回收環302係設置於第一回收環301下方,且相對於旋轉台10於垂直方向移動。在未開始蝕刻或清洗製程時,第一回收環301及第二回收環302皆位於最低的初始位置,第一環壁3011與第二環壁3021相密合,等待機械手臂(未圖示)將基板2抓取後放置於旋轉台10上。To further explain, as shown in FIG3 , the first recycling ring 301 and the second recycling ring 302 are disposed around the turntable 10, and the second recycling ring 302 is disposed below the first recycling ring 301 and moves in a vertical direction relative to the turntable 10. Before the etching or cleaning process begins, the first recycling ring 301 and the second recycling ring 302 are both located at the lowest initial position, and the first ring wall 3011 and the second ring wall 3021 are tightly fitted, waiting for the robot arm (not shown) to grab the substrate 2 and place it on the turntable 10.

以下進一步說明上述構件的詳細結構。如圖4A、B所示,第一回收環301具有第一環壁3011及止擋壁3012,第一環壁3011之一端鄰近旋轉台10,另一端與止擋壁3012相連接;第二回收環302具有第二環壁3021、第三環壁3022及第四環壁3023,第三環壁3022位於第二環壁3021及第四環壁3023之間,第二環壁3021較第三環壁3022及第四環壁3023鄰近旋轉台10。The detailed structure of the above components is further described below. As shown in FIG. 4A and FIG. 4B , the first recycling ring 301 has a first ring wall 3011 and a stop wall 3012, one end of the first ring wall 3011 is adjacent to the rotating table 10, and the other end is connected to the stop wall 3012; the second recycling ring 302 has a second ring wall 3021, a third ring wall 3022 and a fourth ring wall 3023, the third ring wall 3022 is located between the second ring wall 3021 and the fourth ring wall 3023, and the second ring wall 3021 is closer to the rotating table 10 than the third ring wall 3022 and the fourth ring wall 3023.

第三環壁3022及第四環壁3023朝向不同方向傾斜,並形成開口朝向止擋壁3012之第一凹槽3024。The third annular wall 3022 and the fourth annular wall 3023 are inclined in different directions and form a first groove 3024 opening toward the stop wall 3012 .

第一環壁3011相對於旋轉台10呈傾斜設置,因此當第一回收環301上升時,朝向旋轉台10傾斜設置的第一環壁3011可以有效阻擋飛濺的液體,並使其流入第一開口303。The first ring wall 3011 is inclined relative to the rotating table 10 , so when the first recovery ring 301 rises, the first ring wall 3011 inclined toward the rotating table 10 can effectively block the splashing liquid and make it flow into the first opening 303 .

另外,本申請的基板處理設備1更包含固定環壁306,固定環壁306設置於回收裝置30下方,且形成開口朝向回收裝置30之第二凹槽3061。In addition, the substrate processing apparatus 1 of the present application further includes a fixed ring wall 306 , which is disposed below the recovery device 30 and forms a second groove 3061 opening toward the recovery device 30 .

第一環壁3011之第一厚度沿著遠離旋轉台10的方向漸增,第二環壁3021之第二厚度沿著遠離旋轉台10的方向漸增,換言之,第一環壁3011及第二環壁3021在最接近旋轉台10的位置有最薄的厚度; 如圖5所示當第一環壁3011與第二環壁3021相接觸密合時(第一開口303閉合時),可以避免機構上的干涉,且也有利於流體流入第二開口304。The first thickness of the first annular wall 3011 gradually increases in the direction away from the rotating table 10, and the second thickness of the second annular wall 3021 gradually increases in the direction away from the rotating table 10. In other words, the first annular wall 3011 and the second annular wall 3021 have the thinnest thickness at the position closest to the rotating table 10. As shown in FIG. 5, when the first annular wall 3011 and the second annular wall 3021 are in close contact (when the first opening 303 is closed), mechanical interference can be avoided and it is also beneficial for the fluid to flow into the second opening 304.

如圖4A及圖5所示,第一回收環301及第二回收環302依序上升並依序形成第一開口303,及第二開口304,且當第一開口303形成時,第二環壁3021與旋轉台10側邊緊配,第二開口304閉合,當第二開口304形成時,第一環壁3011與第二環壁3021相接觸密合,第一開口303閉合。且在一實施例中,第一開口303形成於第一回收環301及第二回收環302之間,而第二開口304形成於第二回收環302及旋轉台10之間。As shown in FIG. 4A and FIG. 5 , the first recycling ring 301 and the second recycling ring 302 rise in sequence and form the first opening 303 and the second opening 304 in sequence, and when the first opening 303 is formed, the second ring wall 3021 is tightly matched with the side of the rotating table 10, and the second opening 304 is closed. When the second opening 304 is formed, the first ring wall 3011 and the second ring wall 3021 are in close contact, and the first opening 303 is closed. In one embodiment, the first opening 303 is formed between the first recycling ring 301 and the second recycling ring 302, and the second opening 304 is formed between the second recycling ring 302 and the rotating table 10.

值得一提的是,在一實施例中,不同的製程液體(例如清洗藥水及蝕刻液)會由不同的開口進行回收,因此,由於開口會依序閉合,可以避免不同的製程液體之間交叉污染。It is worth mentioning that in one embodiment, different process liquids (such as cleaning solution and etching solution) are recovered through different openings. Therefore, since the openings are closed in sequence, cross contamination between different process liquids can be avoided.

詳而言之,由於第三環壁3022及第四環壁3023朝向不同方向傾斜,因而有利於製程液體(例如蝕刻液或清洗藥水)流動至第一凹槽3024的底部,使得製程液體可以順暢地流動至回收管路中。再者,止擋壁3012的設置可以進一步避免回收後的藥水或是其它製程液體(例如去離子水)在第一開口303閉合之後由第一開口303非預期的進出。In detail, since the third annular wall 3022 and the fourth annular wall 3023 are inclined in different directions, it is beneficial for the process liquid (such as etching liquid or cleaning liquid) to flow to the bottom of the first groove 3024, so that the process liquid can flow smoothly to the recovery pipeline. Furthermore, the setting of the stop wall 3012 can further prevent the recovered liquid or other process liquid (such as deionized water) from unexpectedly entering and exiting the first opening 303 after the first opening 303 is closed.

舉例來說,在某些情況下,第一開口303雖已閉合,但可能存在微小縫隙,此時反濺的去離子水將有可能由此縫隙流入,造成已回收的製程液體(例如蝕刻液或是清洗藥水)遭受污染;或者,已回收的製程液體(例如蝕刻液或是清洗藥水)可能在某些情況下,例如機台晃動、殘液未完全排除等狀況,由第一開口303滴落,此時將會造成正在進行後續製程的基板2產生污染,因此,止擋壁3012可以避免上述情況。For example, in some cases, although the first opening 303 is closed, there may be a tiny gap. At this time, the backwash deionized water may flow in through the gap, causing the recovered process liquid (such as etching solution or cleaning solution) to be contaminated; or, the recovered process liquid (such as etching solution or cleaning solution) may drip from the first opening 303 under certain circumstances, such as machine shaking, residual liquid not completely removed, etc., which will cause contamination to the substrate 2 that is undergoing subsequent processes. Therefore, the stop wall 3012 can avoid the above situation.

除此之外,由於止擋壁3012係朝向第一凹槽3024的底部延伸,因此可以在流體流入第一開口303時,導引流體向第一凹槽3024,增加回收的效益。In addition, since the stop wall 3012 extends toward the bottom of the first groove 3024, when the fluid flows into the first opening 303, the fluid can be guided toward the first groove 3024, thereby increasing the recovery efficiency.

進一步說明,當製程液體由第一開口303或是第二開口304流入之後,將會再經由其他管路進入對應的回收裝置進行回收,以下將進一步說明本申請的回收管路及回收裝置。To further explain, after the process liquid flows in from the first opening 303 or the second opening 304, it will enter the corresponding recovery device through other pipelines for recovery. The recovery pipeline and recovery device of this application will be further explained below.

如圖6所示,在一實施例中,本申請的基板處理設備1更包含第一回收管路401、第一回收裝置402、第二回收管路403。As shown in FIG. 6 , in one embodiment, the substrate processing apparatus 1 of the present application further includes a first recovery pipeline 401 , a first recovery device 402 , and a second recovery pipeline 403 .

第一回收管路401的一端連接與第一凹槽3024的底部連通,因而可以使得第一製程液體(例如蝕刻液或是清洗藥水等)順暢地流入第一回收管路401。第一回收管路401的另一端與第一回收裝置402相連接,以接收流入第一回收管路401的第一製程液體。One end of the first recovery line 401 is connected to the bottom of the first groove 3024, so that the first process liquid (such as etching liquid or cleaning solution) can flow smoothly into the first recovery line 401. The other end of the first recovery line 401 is connected to the first recovery device 402 to receive the first process liquid flowing into the first recovery line 401.

進一步說明,在一實施例中,第一回收裝置402包含泵浦、流量計、過濾單元等元件,以將第一製程液體重新回收再利用,因而可以達成節省成本的效果。To further explain, in one embodiment, the first recovery device 402 includes components such as a pump, a flow meter, and a filter unit to recycle the first process liquid for reuse, thereby achieving a cost saving effect.

如圖7所示,第二回收管路403的一端與第二凹槽3061的底部連通,因而可以使得第二製程液體(例如清洗基板2後的去離子水)順暢地流入第二回收管路403。第二回收管路403的另一端與第二回收裝置404相連接,以接收流入第二回收管路403的第二製程液體。As shown in FIG7 , one end of the second recovery line 403 is connected to the bottom of the second groove 3061, so that the second process liquid (e.g., deionized water after cleaning the substrate 2) can flow smoothly into the second recovery line 403. The other end of the second recovery line 403 is connected to the second recovery device 404 to receive the second process liquid flowing into the second recovery line 403.

進一步說明,在一實施例中,第二回收裝置404包含廢水回收槽、廢水處理單元等元件,以將第二製程液體中所包含的污染物進行處理,避免污染環境。To further explain, in one embodiment, the second recovery device 404 includes a waste water recovery tank, a waste water treatment unit and other components to treat pollutants contained in the second process liquid to avoid polluting the environment.

另外,值得一提的是,第一回收管路401與第二回收管路403可以交錯設置,且分別與不同的第一凹槽3024及第二凹槽3061連通,也就是說,兩者為獨立的管路,因而可以獨立回收不同的製程液體。In addition, it is worth mentioning that the first recovery pipeline 401 and the second recovery pipeline 403 can be arranged alternately and respectively connected to different first grooves 3024 and second grooves 3061. In other words, the two are independent pipelines, and thus different process liquids can be recovered independently.

以下將進一步說明本申請製程液體的回收流程。請參閱圖3,當尚未進行製程液體的回收時,第一回收環301及第二回收環302可皆位於最低位置,且當第一回收環301及第二回收環302皆位於最低位置時,第一環壁3011與第二環壁3021相接觸密合,第一開口303由第一環壁3011及第二環壁3021閉合。The following will further describe the recycling process of the process liquid of the present application. Please refer to FIG3 , when the process liquid has not yet been recycled, the first recycling ring 301 and the second recycling ring 302 can both be located at the lowest position, and when the first recycling ring 301 and the second recycling ring 302 are both located at the lowest position, the first ring wall 3011 and the second ring wall 3021 are in close contact, and the first opening 303 is closed by the first ring wall 3011 and the second ring wall 3021.

如圖4所示,當需要對第一製程液體(例如蝕刻液或是其它清洗藥水)進行回收時,可先將第一回收環301上升,該第一回收環301於垂直方向上移動至最高位置且第二回收環302位於最低位置時,第一開口303形成於第一回收環301及第二回收環302之間,此時,第一製程液體將會由於離心力的關係,由基板2進入第一開口303。As shown in FIG. 4 , when the first process liquid (such as etching solution or other cleaning solution) needs to be recovered, the first recovery ring 301 can be raised first. When the first recovery ring 301 moves to the highest position in the vertical direction and the second recovery ring 302 is at the lowest position, a first opening 303 is formed between the first recovery ring 301 and the second recovery ring 302. At this time, the first process liquid will enter the first opening 303 from the substrate 2 due to the centrifugal force.

而後,如圖4A及圖6所示,第一製程液體自第一開口303流入第一回收環301及第二回收環302之間,並由上述的止擋壁3012引導,朝向第一凹槽3024流動,因而第一製程液體由第一回收環301及第二回收環302之間流向第一回收管路401,並由第一回收裝置402回收。Then, as shown in Figures 4A and 6, the first process liquid flows from the first opening 303 into the space between the first recovery ring 301 and the second recovery ring 302, and is guided by the above-mentioned stop wall 3012 to flow toward the first groove 3024, so that the first process liquid flows from the space between the first recovery ring 301 and the second recovery ring 302 to the first recovery pipeline 401, and is recovered by the first recovery device 402.

如圖5所示,當需要對第二製程液體(例如清洗基板2後的去離子水)進行回收時,可再將第二回收環302上升。當第二回收環302於垂直方向上移動至最高位置時(此時第一回收環301及第二回收環302皆位在最高位置),第一環壁3011與第二環壁3021相接觸密合,第二開口304形成於第二回收環302及旋轉台10之間,此時,第二製程液體將會由於離心力的關係,由基板2進入第二開口304。As shown in FIG5 , when the second process liquid (e.g., deionized water after cleaning the substrate 2) needs to be recovered, the second recovery ring 302 can be raised again. When the second recovery ring 302 moves to the highest position in the vertical direction (at this time, the first recovery ring 301 and the second recovery ring 302 are both at the highest position), the first ring wall 3011 and the second ring wall 3021 are in close contact, and the second opening 304 is formed between the second recovery ring 302 and the turntable 10. At this time, the second process liquid will enter the second opening 304 from the substrate 2 due to the centrifugal force.

而後,如圖7所示,第二製程液體自第二開口304流入第二回收環302及旋轉台10之間,並朝向第二凹槽3061流動,因而第二製程液體流向第二回收管路403,並由第二回收裝置404回收。Then, as shown in FIG. 7 , the second process liquid flows from the second opening 304 into between the second recovery ring 302 and the rotary table 10 and flows toward the second groove 3061 , so that the second process liquid flows to the second recovery pipeline 403 and is recovered by the second recovery device 404 .

綜上所述,在本申請中,回收裝置除了可以在垂直方向上升降以進行製程藥水的回收之外,在以去離子水清洗晶圓時,位於底部的回收環可以向上移動與上部的回收環將兩者之間的藥水回收口密合,因而可以防止去離子水由旋轉晶圓表面噴賤到相鄰的藥水回收口。因此,在本申請中,由藥水回收環所收集之藥水不易被污染,而後可流至對應的回收管路,以利後續的回收或排放,而去離子水可以直接經由對應的廢水回收管進行收集,兩者分別以不同管路回收,進而避免回收藥水及廢水交叉污染之問題。In summary, in this application, in addition to being able to rise and fall in the vertical direction to recover process chemicals, when washing wafers with deionized water, the recovery ring at the bottom can move upward to seal the chemical recovery port between the recovery ring at the top, thereby preventing the deionized water from being sprayed from the rotating wafer surface to the adjacent chemical recovery port. Therefore, in this application, the chemical collected by the chemical recovery ring is not easily contaminated, and can then flow to the corresponding recovery pipeline to facilitate subsequent recovery or discharge, and the deionized water can be directly collected through the corresponding waste water recovery pipe, and the two are recovered in different pipelines, thereby avoiding the problem of cross-contamination between the recovered chemical and the waste water.

以上所述僅為舉例性,而非為限制性者。任何未脫離本申請之精神與範疇,而對其進行之等效修改或變更,均應包含於後附之申請專利範圍中。The above description is for illustrative purposes only and is not intended to be limiting. Any equivalent modifications or changes made to the present application without departing from the spirit and scope of the present application shall be included in the scope of the patent application attached hereto.

1:基板處理設備 10:旋轉台 20:液體供應裝置 30:回收裝置 301:第一回收環 3011:第一環壁 3012:止擋壁 302:第二回收環 3021:第二環壁 3022:第三環壁 3023:第四環壁 3024:第一凹槽 303:第一開口 304:第二開口 306:固定環壁 3061:第二凹槽 401:第一回收管路 402:第一回收裝置 403:第二回收管路 404:第二回收裝置 50:升降驅動裝置 60:驅動馬達 70:噴頭 71:晶粒 72:溝槽 81,82:回收環 2:基板 1: substrate processing equipment 10: rotary table 20: liquid supply device 30: recovery device 301: first recovery ring 3011: first ring wall 3012: stop wall 302: second recovery ring 3021: second ring wall 3022: third ring wall 3023: fourth ring wall 3024: first groove 303: first opening 304: second opening 306: fixed ring wall 3061: second groove 401: first recovery pipeline 402: first recovery device 403: second recovery pipeline 404: second recovery device 50: lifting drive device 60: drive motor 70: nozzle 71: grain 72: Groove 81,82: Recovery ring 2: Substrate

圖1為習知技術之基板處理設備之示意圖。FIG. 1 is a schematic diagram of a substrate processing apparatus according to prior art.

圖2為根據本申請之實施例之基板處理設備之第一俯視圖。FIG. 2 is a first top view of a substrate processing apparatus according to an embodiment of the present application.

圖3為根據本申請之實施例之基板處理設備之第一剖視圖。FIG3 is a first cross-sectional view of a substrate processing apparatus according to an embodiment of the present application.

圖4A為根據本申請之實施例之基板處理設備之第二剖視圖。FIG. 4A is a second cross-sectional view of a substrate processing apparatus according to an embodiment of the present application.

圖4B為根據本申請之實施例之基板處理設備之回收裝置剖視細部放大圖FIG. 4B is an enlarged cross-sectional view of a recovery device of a substrate processing apparatus according to an embodiment of the present application.

圖5為根據本申請之實施例之基板處理設備之第三剖視圖。FIG5 is a third cross-sectional view of the substrate processing apparatus according to the embodiment of the present application.

圖6為根據本申請之實施例之基板處理設備之第四剖視圖。FIG6 is a fourth cross-sectional view of the substrate processing apparatus according to an embodiment of the present application.

圖7為根據本申請之實施例之基板處理設備之第五剖視圖。FIG. 7 is a fifth cross-sectional view of the substrate processing apparatus according to an embodiment of the present application.

1:基板處理設備 1: Substrate processing equipment

10:旋轉台 10: Rotating table

20:液體供應裝置 20: Liquid supply device

30:回收裝置 30: Recovery device

301:第一回收環 301: First recycling ring

3011:第一環壁 3011: First Ring Wall

3012:止擋壁 3012: Stop wall

302:第二回收環 302: Second recycling ring

3021:第二環壁 3021: Second ring wall

3022:第三環壁 3022: The third ring wall

3023:第四環壁 3023: The fourth ring wall

3024:第一凹槽 3024: First groove

303:第一開口 303: First opening

306:固定環壁 306: Fixed ring wall

3061:第二凹槽 3061: Second groove

60:驅動馬達 60: Driving motor

2:基板 2: Substrate

Claims (16)

一種具備回收裝置之基板處理設備,包含:一旋轉台,用以放置一基板;一液體供應裝置,設置於該旋轉台上方,對該基板施加複數個製程液體,該複數個製程液體包含一第一製程液體及一第二製程液體;以及一回收裝置,用以回收該第一製程液體及該第二製程液體,包含:一第一回收環,環繞地設置在該旋轉台的周圍,且相對於該旋轉台於一垂直方向移動;及一第二回收環,環繞地設置在該旋轉台的周圍,配置於該第一回收環下方,且相對於該旋轉台於該垂直方向移動;其中,該第一回收環及該第二回收環依序於該垂直方向上移動,並依序形成一第一開口及一第二開口;該第一開口形成於該第一回收環及該第二回收環之間,該第二開口形成於該第二回收環及該旋轉台之間。 A substrate processing device with a recovery device comprises: a rotating table for placing a substrate; a liquid supply device arranged above the rotating table for applying a plurality of process liquids to the substrate, wherein the plurality of process liquids comprises a first process liquid and a second process liquid; and a recovery device for recovering the first process liquid and the second process liquid, comprising: a first recovery ring arranged around the rotating table and relative to the rotating table. a vertical direction; and a second recycling ring, which is arranged around the rotating table, disposed below the first recycling ring, and moves in the vertical direction relative to the rotating table; wherein the first recycling ring and the second recycling ring move in the vertical direction in sequence, and form a first opening and a second opening in sequence; the first opening is formed between the first recycling ring and the second recycling ring, and the second opening is formed between the second recycling ring and the rotating table. 如請求項1所述之具備回收裝置之基板處理設備,其中該第一回收環具有一第一環壁及一止擋壁,該第一環壁一端鄰近該旋轉台,另一端與該止擋壁相連接。 The substrate processing equipment with a recovery device as described in claim 1, wherein the first recovery ring has a first ring wall and a stop wall, one end of the first ring wall is adjacent to the turntable, and the other end is connected to the stop wall. 如請求項2所述之具備回收裝置之基板處理設備,其中該第一環壁相對於該旋轉台係呈傾斜設置。 The substrate processing equipment with a recovery device as described in claim 2, wherein the first annular wall is inclined relative to the turntable. 如請求項2所述之具備回收裝置之基板處理設備,其中該第一 環壁之一第一厚度沿著遠離該旋轉台的方向漸增。 A substrate processing apparatus equipped with a recovery device as described in claim 2, wherein a first thickness of the first ring wall gradually increases in a direction away from the turntable. 如請求項2所述之具備回收裝置之基板處理設備,其中該第二回收環具有一第二環壁、一第三環壁及一第四環壁,該第三環壁位於該第二環壁及該第四環壁之間,該第二環壁較該第三環壁及該第四環壁鄰近該旋轉台。 The substrate processing equipment with a recovery device as described in claim 2, wherein the second recovery ring has a second ring wall, a third ring wall and a fourth ring wall, the third ring wall is located between the second ring wall and the fourth ring wall, and the second ring wall is closer to the turntable than the third ring wall and the fourth ring wall. 如請求項5所述之具備回收裝置之基板處理設備,其中該第二環壁之一第二厚度沿著遠離該旋轉台的方向漸增。 A substrate processing apparatus equipped with a recovery device as described in claim 5, wherein a second thickness of the second ring wall gradually increases in a direction away from the turntable. 如請求項第5項所述之具備回收裝置之基板處理設備,其中當該第一開口形成時,該第二環壁與該旋轉台側邊緊配,該第二開口閉合。 The substrate processing equipment with a recovery device as described in claim 5, wherein when the first opening is formed, the second annular wall is tightly matched with the side of the turntable, and the second opening is closed. 如請求項第5項所述之具備回收裝置之基板處理設備,其中當該第二開口形成時,該第一環壁與該第二環壁相接觸密合,該第一開口閉合。 The substrate processing equipment with a recovery device as described in claim 5, wherein when the second opening is formed, the first annular wall and the second annular wall are in close contact and the first opening is closed. 如請求項5所述之具備回收裝置之基板處理設備,其中該第三環壁及該第四環壁朝向不同方向傾斜,並形成開口朝向該止擋壁之一第一凹槽。 The substrate processing equipment with a recovery device as described in claim 5, wherein the third annular wall and the fourth annular wall are inclined in different directions and form a first groove opening toward the stop wall. 如請求項1所述之具備回收裝置之基板處理設備,其中當該第一回收環於該垂直方向上移動至最高位置且該第二回收環位於最低位置時,該第一製程液體自該第一開口流入該第一回收環及該第二回收環之間。 The substrate processing equipment with a recovery device as described in claim 1, wherein when the first recovery ring moves to the highest position in the vertical direction and the second recovery ring is at the lowest position, the first process liquid flows from the first opening into the space between the first recovery ring and the second recovery ring. 如請求項9所述之具備回收裝置之基板處理設備,更包含一第一回收管路及一第一回收裝置,該第一製程液體由該第一回收環及該第二回收環之間流向該第一回收管路,並由該第一回 收裝置回收。 The substrate processing equipment with a recovery device as described in claim 9 further includes a first recovery pipeline and a first recovery device, and the first process liquid flows from between the first recovery ring and the second recovery ring to the first recovery pipeline and is recovered by the first recovery device. 如請求項1所述之具備回收裝置之基板處理設備,更包含一固定環壁,該固定環壁設置於該旋轉台下方,且形成開口朝向該回收裝置之一第二凹槽。 The substrate processing equipment with a recovery device as described in claim 1 further includes a fixed ring wall, which is arranged below the turntable and forms a second groove opening toward the recovery device. 如請求項12所述之具備回收裝置之基板處理設備,其中當該第一回收環及該第二回收環於該垂直方向上移動至最高位置時,該第二製程液體自該第二開口流向該第二凹槽。 The substrate processing equipment with a recovery device as described in claim 12, wherein when the first recovery ring and the second recovery ring move to the highest position in the vertical direction, the second process liquid flows from the second opening to the second groove. 如請求項12所述之具備回收裝置之基板處理設備,更包含一第二回收管路及一第二回收裝置,該第二製程液體由該第二凹槽流向該第二回收管路,並由該第二回收裝置回收。 The substrate processing equipment with a recovery device as described in claim 12 further includes a second recovery pipeline and a second recovery device, and the second process liquid flows from the second groove to the second recovery pipeline and is recovered by the second recovery device. 如請求項11所述之具備回收裝置之基板處理設備,更包含一驅動馬達,該驅動馬達驅動該旋轉台旋轉,且設置於該旋轉台下方。 The substrate processing equipment with a recovery device as described in claim 11 further includes a drive motor, which drives the turntable to rotate and is arranged under the turntable. 如請求項1所述之具備回收裝置之基板處理設備,更包含一升降驅動裝置,該升降驅動裝置驅動該第一回收環及該第二回收環於該垂直方向上移動。 The substrate processing equipment with a recovery device as described in claim 1 further includes a lifting drive device, which drives the first recovery ring and the second recovery ring to move in the vertical direction.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI884740B (en) * 2024-03-21 2025-05-21 弘塑科技股份有限公司 Substrate processing apparatus with recycling device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI884740B (en) * 2024-03-21 2025-05-21 弘塑科技股份有限公司 Substrate processing apparatus with recycling device

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