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TWI877801B - Galvanic plating apparatus and method for galvanically plating a component carrier structure - Google Patents

Galvanic plating apparatus and method for galvanically plating a component carrier structure Download PDF

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Publication number
TWI877801B
TWI877801B TW112135842A TW112135842A TWI877801B TW I877801 B TWI877801 B TW I877801B TW 112135842 A TW112135842 A TW 112135842A TW 112135842 A TW112135842 A TW 112135842A TW I877801 B TWI877801 B TW I877801B
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component carrier
anode
carrier structure
electroplating
current density
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TW112135842A
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Chinese (zh)
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TW202430728A (en
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馬榮剛
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大陸商奧特斯科技(重慶)有限公司
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/007Current directing devices
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/02Tanks; Installations therefor
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10Electrodes, e.g. composition, counter electrode
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10Electrodes, e.g. composition, counter electrode
    • C25D17/12Shape or form
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00Processes for servicing or operating cells for electrolytic coating
    • C25D21/12Process control or regulation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

A galvanic plating apparatus (100) and a method for galvanically plating a component carrier structure(102), the galvanic plating apparatus (100) comprises an anode (104) split into a plurality of separate anode parts (106), each config-ured for providing a separate current density to an assigned section (120) of the component carrier structure (102), for providing a spatially dependent current density profile over an extension of the component carrier structure (102) to be galvanically plated.

Description

用於對部件承載件結構進行電鍍覆的電鍍覆設備和方法Electroplating apparatus and method for electroplating a component carrier structure

本發明涉及對部件承載件結構進行電鍍覆的電鍍覆設備以及電鍍覆方法。The present invention relates to an electroplating device and an electroplating method for electroplating a component carrier structure.

在配備有一或多個電子組件之組件載體的產品功能不斷增加、電子組件小型化程度不斷提高以及安裝在組件載體(諸如,印刷電路板)上電子組件數量不斷增加的背景下,採用越來越強大的陣列狀組件或具有多個電子組件的封裝,它們具有複數個接觸或連接,這些接觸之間的間距越來越小。去除由此種電子組件和組件載體本身在操作期間產生的熱成為一個日益嚴重的問題。同時,組件載體應機械地堅固且電可靠,以便即使在惡劣條件下也能操作。 當對部件承載件的電傳導結構進行電鍍覆時,可能期望但難以獲得明確限定的厚度或厚度分佈。 Against the background of increasing product functionality of component carriers equipped with one or more electronic components, the increasing miniaturization of electronic components and the increasing number of electronic components mounted on component carriers (e.g. printed circuit boards), increasingly powerful array-like components or packages with a plurality of electronic components are being used, which have a plurality of contacts or connections with increasingly smaller spacings between these contacts. Removing the heat generated by such electronic components and the component carriers themselves during operation is becoming an increasingly serious problem. At the same time, the component carrier should be mechanically robust and electrically reliable in order to be able to operate even under adverse conditions. When electroplating electrically conductive structures of component carriers, a well-defined thickness or thickness distribution may be desired but is difficult to obtain.

本發明的目的是允許製造具有關於電傳導結構的明確限定的厚度或厚度分佈的部件承載件。 為了實現上述目的,提供了根據本發明示例性實施方式的對部件承載件結構進行電鍍覆的電鍍覆設備以及電鍍覆方法。 根據本發明之例示性實施方式,提供一種用於對部件承載件結構進行電鍍覆的電鍍覆設備,其中該電鍍覆設備包括:陽極,該陽極被分成多個單獨的陽極部分,每個陽極部分被配置用於向部件承載件結構的指定部段提供單獨的電流密度(特別是單獨可控的電流密度,單獨於且獨立於其他一個或更多個陽極部分的電流密度),以用於在待被電鍍覆的部件承載件結構的延伸部之上提供空間上相關的電流密度分佈。 根據本發明之例示性實方式,提供一種用於對部件承載件結構進行電鍍覆的方法,其中該方法包括:將陽極分成多個單獨的陽極部分,並通過每個陽極部分向部件承載件結構的指定部段提供單獨的電流密度,以用於在待被電鍍覆的部件承載件結構的延伸部之上提供空間上相關的電流密度分佈。 在本申請的上下文中,術語“部件承載件”可以具體表示能夠在其上和/或其中直接或間接地容納一個或更多個部件以提供機械支撐和/或電連接性的任何支撐結構。換言之,部件承載件可以被配置為用於部件的機械和/或電子承載件。具體地,部件承載件可以是印刷電路板、有機仲介層和IC(集成電路)基板中的一種。部件承載件也可以是對上述類型的部件承載件中的不同部件承載件進行組合的混合板。 在本申請的上下文中,術語“部件承載件結構”可以具體表示包括一個或多個部件承載件或其預製件的物理結構。例如,部件承載件結構可以是部件承載件本身。還可能的是,部件承載件結構包括多個部件承載件,例如部件承載件的陣列或包括部件承載件的面板。此外,還可能的是,部件承載件結構是在製造部件承載件期間獲得的結構,例如包括仍可以被整體連接的多個部件承載件的預製件的面板或陣列。 在本申請的上下文中,術語“電鍍覆”可以具體表示使用包含待被沉積為離子(例如以溶解的金屬鹽的形式)的金屬特別是銅的水基溶液(也可以被表示為電解質)對該金屬進行電鍍。在電鍍覆期間,可以在陽極與至少部分電傳導的工件之間施加電場,該工件為部件承載件結構的形式,該部件承載件結構可以用作陰極或者可以與陰極電連接。因此,帶正電的金屬離子可能被迫移動至陰極型部件承載件結構,在陰極型部件承載件結構處金屬離子放棄它們的電荷並將它們自身作為金屬沉積在部件承載件結構的表面上。因此,將由電場和所施加的電勢強迫離子拾取由陰極提供的帶負電的電子。在電鍍覆期間,可以在陽極與陰極之間施加直流電(DC)。這可以允許以快速且有效的方式完成電鍍覆。然而,也可以通過施加脈衝電流(特別是具有正符號和負符號的交替脈衝的電流分佈)來執行電鍍覆,其中具有負符號的脈衝的短相位可以引起臨時的金屬去除而不是金屬沉積,例如補償過度鍍覆。當使用脈衝式電流分佈時,可以改善在部件承載件結構的表面上沉積的金屬(特別是銅)的厚度的均勻性。本發明的示例性實施方式可以使用部件承載件結構的直流電鍍覆和脈衝式電鍍覆中的任何一種。因此,部件承載件結構上的電沉積金屬結構可以通過電鍍或電鍍覆形成。可以執行一個或更多個鍍覆階段以調整電沉積金屬層的厚度,並且特別是可選擇地形成電沉積金屬層的多個子層。 在本申請的上下文中,術語“陽極”可以具體表示在電鍍覆期間浸入鍍覆浴中的電極。陽極可以是(至少在鍍覆過程的主要部分中)施加有第一(例如正)電壓或電流的電極。與此相反,陰極可以表示在電鍍覆期間使用的並且在電鍍覆過程期間電連接到待被鍍覆的部件承載件結構的另一電極。陰極可以是(至少在鍍覆過程的主要部分中)施加有第二(例如負)電壓或電流的電極。陽極可以被定義為發生氧化反應的電極。相應地,陰極可以被定義為發生還原反應的電極。 在本申請的上下文中,術語“被配置用於提供單獨的電流密度的陽極部分”可以具體表示共同的電鍍覆陽極的電分離的部分,這些部分可以被配置成使得可以將具有不同電流密度的單獨的電流施加至陽極部分中的不同陽極部分。電流密度可以表示每次流過選定橫截面面積的電荷量。電流密度可以以每平方米安培數的方式來衡量。具體地,不同的陽極部分可以具有到電流源或整流器的電分離的供應線,使得不同的電流密度值和不同的絕對電流值可以被選擇並且被施加至各個陽極部分。例如,可以提供控制單元,用於對應地控制電流源和陽極部分。 在本申請的上下文中,術語“在部件承載件結構的延伸部之上提供空間上相關的電流密度分佈”可以具體表示部件承載件結構在空間上相對於陽極部分佈置且與陽極部分有距離,使得與對應的陽極部分在空間上對齊的部件承載件結構的不同部分經歷不同的鍍覆電流值,以便用不同的鍍覆效率進行鍍覆。在陽極部分與部件承載件結構之間可能不存在直接的物理接觸以避免電短路。例如,在部件承載件結構的部分與陽極部分之間的上述空間關係可以在部件承載件結構沿電鍍覆線運動期間被調整或在部件承載件結構於電鍍覆線的某個位置處(暫時或永久)靜止時被調整。例如,在基於部件承載件結構製造的部件承載件的規範要求部件承載件的不同部分中的金屬密度不同的情况下,對整個部件承載件結構施加相同的電流密度可能會導致銅厚度分佈的不均勻性。因此,可以通過為不同的陽極部分選擇不同的電流密度來實現部件承載件結構之上更均勻的銅厚度分佈。 根據本發明的示例性實施方式,可以使用被分成多個單獨的陽極部分的陽極來對部件承載件結構進行電鍍覆。所述陽極部分中的每個陽極部分可以電連接至電流源以便是可控的,從而提供單獨的電流密度,該電流密度可以針對不同的陽極部分被不同地選擇並且獨立於其他陽極部分的電流密度。每個陽極部分可以在空間上被指定給待被鍍覆的部件承載件結構的對應部分或部段,使得在電鍍覆期間可以將單獨的電流密度施加至部件承載件結構的每個部分。由於在電鍍過程期間部件承載件結構可以用作陰極或可以電連接到陰極,因此由於各陽極部分的不同電流密度,可以不同地調整部件承載件結構的不同部段上的電金屬沉積的效率。因此,部件承載件結構的不同部段中的銅沉積效率的固有的、設計相關的和/或人為造成的不均勻性可以通過由單獨供電的陽極部分提供的對應電流密度分佈來至少部分地平衡或均衡。描述性地講,部件承載件結構的不同部段的金屬沉積效率的不均勻性可以至少部分地通過由提供對應調整的空間上相關的電流密度分佈的陽極部分設定的金屬沉積效率的反向不均勻性來補償。通過在待被電鍍覆的部件承載件結構的延伸部之上提供空間上相關的電流密度分佈,可以使部件承載件結構的延伸部之上的銅厚度分佈更均勻或至少可更精確地限定。有利地,這可以允許避免部件承載件結構的各個部段的過度鍍覆和鍍覆不足。結果,可以通過減少電鍍覆相關的缺陷來提高製造的部件承載件的產量,並且可以改善所獲得的部件承載件的可靠性。示例性實施方式的另一有利技術效果是專用區段或部段與其他區段或部段相比可以具有不同的粗糙度。例如,某些區域可能是光滑發亮的,而其他區域可能是暗淡的。有利地,這可以用於進一步的製造階段(特別是涉及黏合的階段)。 在下文中,將說明電鍍覆設備和方法的另外的示例性實施方式。 在一實施方式中,電鍍覆設備包括控制單元,該控制單元被配置用於單獨地控制施加至陽極部分中的每個陽極部分的電流密度。例如,這種控制單元可以被配置用於執行算法以限定在鍍覆過程期間施加至各陽極部分的電流的時間相關性和/或空間相關性。對應的控制單元可以由此平衡在整個陽極提供相同電流密度的情形中由不期望的現象引起的金屬厚度不均勻性。 在一實施方式中,控制單元被配置用於控制陽極,以調整空間上相關的電流密度分佈,使得部件承載件結構的不同部段分別以不同的鍍覆參數被電鍍覆。具體地,與部件承載件結構的顯示出固有的較高鍍覆效率並因此經受具有較低鍍覆電流的陽極部分的一部段相比,在該部件承載件結構的顯示出固有的較低鍍覆效率的另一部段中,鍍覆電流和由此的鍍覆效率可以被控制為較高。 在一實施方式中,控制單元被配置用於控制陽極,以基於鍍覆浴中的溫度和/或pH值來調整空間上相關的電流密度分佈。例如,鍍覆浴中的溫度和/或pH值可以由對應的感測器檢測。由於電化學反應可能強烈依賴於電解浴內的溫度和pH,因此可以預見一個或更多個pH和/或溫度感測器。具體地,可以根據所感測的pH值和/或所感測的溫度參數來調整電勢和/或電流。 在一實施方式中,控制單元被配置用於動態地控制施加至每個陽極部分的電流密度,特別是以與時間相關的方式控制施加至每個陽極部分的電流密度。有利地,可以動態地調整空間上相關的電流密度分佈。因此,控制單元可以控制陽極部分,使得它們單獨調整的電流密度隨時間變化。例如,在部件承載件結構沿鍍覆線移動並由此通過靜止陽極的情形中,每個單獨的陽極部分的電流密度可以隨時間調整,使得在每個時間點,部件承載件結構的當前指定的部段經受當前指定的陽極部分的對應調整的電流密度。還可能的是,在電鍍覆過程的第一部分之後,確定例如檢測和/或建模在部件承載件結構的延伸部之上的鍍覆金屬的不均勻厚度分佈。在這種情形中,可以選擇性地修改由陽極部分及其單獨的電流密度產生的空間上相關的電流密度分佈,以至少部分地補償所確定的不均勻性。 在一實施方式中,控制單元被配置用於控制陽極部分,並附加地控制至少一個減材過程以用於從部件承載件結構去除金屬(那時,部件承載件的一部分也可以是陽極的一部分)。這種減材過程可以是從部件承載件結構中去除部分金屬的過程。例如,這種減材過程可以是蝕刻或機械研磨。這種減材過程也有可能形成具有反向電流的電鍍覆過程的一部分,例如在脈衝鍍覆方面。在不均勻金屬分佈的情形中,可能存在具有較高沉積速率的部件承載件結構的部段(例如,根據規範具有較小目標金屬面積的部段)。為了至少部分地平衡這種現象,可以通過陽極部分中的在空間上指定給部件承載件結構的這些部段的各陽極部分來臨時施加負電流,這可能導致這些部段中的臨時金屬去除。通過採取這種措施,可以抑制局部過度鍍覆。 在一實施方式中,控制單元被配置用於控制陽極部分和附加地控制至少一個將金屬施加至部件承載件結構上的增材過程,從而在部件承載件結構上提供預定義的、特別是均勻的金屬分佈。在金屬分佈不均勻的情形中,可能存在具有較低沉積速率的部件承載件結構的部段(例如,根據規範而具有更多目標金屬面積的部段)。為了至少部分地平衡這些現象,可以執行附加的增材過程,以對部件承載件結構的這種部段中的金屬進行局部地增厚。例如,這種附加的增材過程可以是僅在部件承載件結構的這種部段上選擇性地進行的另外的電鍍覆階段。還可以通過金屬的無電沉積、濺射、化學沉積等以空間上相關的方式在部件承載件結構的某些部段上添加金屬。通過採取這種措施,可以避免局部鍍覆不足。 在一實施方式中,控制單元被配置用於控制施加至每個陽極部分的電流密度,從而根據預定義的目標規範在部件承載件結構上形成金屬圖案。例如,待製造的部件承載件(例如印刷電路板)的設計可以被存儲在設計檔案中,該設計檔案包括定義關於製造過程的多個參數的所述目標規範的數據。所述設計檔案還可以包括關於部件承載件的金屬圖案的形狀和位置以及目標厚度的信息。控制單元可以訪問訓示所述預定義設計的信息(例如可以訪問上述的設計檔案),並且可以執行電鍍覆過程,並且特別是控制分離式陽極部分以及它們各自的電流密度。 在具有恆電流鍍覆模式的實施方式中,電流密度可以是固定的,而所施加的電勢可以是變化的。然而,也可能在實施方式中電勢是固定的,而電流密度是變化的(這可以被表示為恆電勢鍍覆模式)。 在一實施方式中,控制單元被配置用於控制施加至每個陽極部分的電流密度,以從而在部件承載件結構上形成具有均勻厚度的金屬圖案。這也可以包括填充空腔和/或通孔的過程。因此,控制單元的控制目標可以是在整個部件承載件結構之上實現相同厚度的金屬圖案。為了實現該控制目標,可以考慮部件承載件結構的不同部段中固有的空間上相關的金屬鍍覆效率。具體地,這可以包括考慮實際獲得的金屬厚度可能取決於部件承載件結構的特定部段根據預定義規範的金屬化表面積與整個表面積的比率的現象。通常,在具有較低比率的區域中獲得較高的金屬厚度,反之亦然。控制單元可以計算和應用陽極部分的空間上相關的電流密度分佈以補償這種現象,即在部件承載件結構的比率較高的部段中提供較高的電流密度分佈。 在一實施方式中,控制單元被配置用於將不同的電勢施加至不同的陽極部分。因此,相對於由部件承載件結構構成的陰極,不同的陽極部分可能存在不同的電壓。 在一實施方式中,不同的陽極部分具有不同的局部區段。通過提供具有不同局部區段的不同陽極部分,提供了用於產生空間上相關的金屬沉積效率分佈的另外的設計參數。 在一實施方式中,電鍍覆設備包括多個電鍍覆槽,在電鍍覆期間部件承載件結構將被順序地傳送通過多個電鍍覆槽,其中電鍍覆槽中的至少一個包括陽極,特別是電鍍覆槽中的每個電鍍覆槽包括陽極,該陽極被分成多個單獨的陽極部分。例如,待被電鍍覆的部件承載件結構可以順序地移動通過多個電鍍覆槽。例如,可以在用與通過電沉積形成的金屬圖案相對應的乾膜對部件承載件結構進行成像之後,開始電鍍。此後,可以在一個電鍍覆槽中或多個連續佈置的電鍍覆槽中執行一個電鍍覆階段或多個電鍍覆階段,例如執行銅鍍覆。之後,有可能形成表面處理部,例如通過在電鍍覆的銅之上鍍覆錫的薄層來形成表面處理部。一個、一些或所有所述電鍍覆槽可以配備有提供空間上相關的電流密度分佈的分離式陽極。這可以促進每個單獨的電鍍覆槽中的均勻金屬沉積。此外,這還可以有利地允許後面的電鍍覆槽來調整其分離式陽極的電流密度分佈,以補償先前電鍍覆槽的不均勻金屬沉積。 在一個或更多個電鍍覆槽中對部件承載件結構進行處理之前,部件承載件結構可以經受預處理,諸如清潔和/或微蝕刻。在一個或更多個電鍍覆槽中對部件承載件結構進行處理之後,部件承載件結構可以經受後處理,例如沖洗和/或乾燥。 在一實施方式中,至少一些陽極部分是V或∧(chevron)形形狀的。因此,可以由陽極部分產生V或∧形圖案。在圖4中示出這種設計的示例。分離式陽極或多個連續(serially)佈置的分離式陽極的陽極部分的這種V或∧形形狀的設計已經證明非常適合觸發均勻金屬沉積。通過這種V或∧形形狀,已經證明可以適當地影響面板型部件承載件結構的不同部段之間的邊界部分。 在一實施方式中,至少一些陽極部分具有至少一個鋸齒形邊緣。再次,參考圖4,該圖4示出了這種鋸齒形邊緣。鋸齒形邊緣可以由一系列連接的直邊緣部分形成,該一系列連接的直邊緣部分具有向內漸縮的邊緣部分和向外漸縮的邊緣部分的交替排序。例如,相對於線性邊緣(例如沿著部件承載件結構的傳送方向延伸)測量的這種邊緣部分的向內漸縮角或向外漸縮角可以小於30°,特別是小於20°。 在一實施方式中,分成陽極部分的陽極具有整體矩形形狀。即使當各個陽極部分設定有V或∧形形狀的邊緣和/或鋸齒形邊緣時,陽極作為整體(即,由作為組成部分的陽極部分形成)也可以具有矩形形狀。所述矩形形狀可以對應於經受使用所述陽極進行電鍍覆的部件承載件結構(特別是面板)的矩形形狀。這可能有助於在部件承載件結構的延伸部之上形成均勻的鍍覆金屬厚度。 在一實施方式中,陽極在傳送方向上和/或橫向於傳送方向被分成多個單獨的陽極部分,在電鍍覆期間部件承載件結構要沿該傳送方向被傳送。例如,一個或更多個部件承載件結構(例如四個面板型部件承載件結構)可以被安裝在一個或更多個支撐結構上並且可以被傳送通過一個或更多個電鍍覆槽。支撐結構可以創建至少一個部件承載件結構與電源或整流器的電連接。當被安裝在支撐結構上時,至少一個部件承載件結構然後可以在鍍覆過程中充當陰極。當被傳送通過一個或更多個電鍍覆槽時,部件承載件結構可以穿過沿部件承載件結構的傳送方向佈置的陽極部分和/或垂直於傳送方向佈置的陽極部分。因此,可以沿著和/或橫向於傳送方向完成空間上相關的電流密度分佈的產生。這可以允許進一步精細化電鍍覆過程,並且特別是其在部件承載件結構的整個延伸部之上產生均勻厚度的金屬結構的能力。 在一實施方式中,電鍍覆設備包括:陰極,該陰極與待被電鍍覆的部件承載件結構電耦合;以及至少一個電流源,該至少一個電流源被配置用於在陽極與陰極之間以可選擇的電流密度分佈施加電流。陰極可以與部件承載件結構的電傳導結構電耦合,使得部件承載件結構在電鍍過程期間也可以用作陰極。 如果通過反向電流從部件承載件結構中去除金屬(參見上述減材過程),則部件承載件結構可以暫時充當陽極。可選地,部件承載件可以包括在部件承載件結構內的電去耦部分、陽極部分和陰極部分,以防止在施加電流時產生短路。 在一實施方式中,陽極的數目和陰極的數目可以是不同的。因此,可能存在不同數目的陰極和陽極。替代性地,可能存在相同數目的陰極和陽極。 在一實施方式中,電鍍覆設備包括傳送機構,用於沿著陽極傳送部件承載件結構,特別是沿著連續佈置的陽極部分中的至少一部分傳送部件承載件結構。這種傳送機構還可以驅動支撐結構(諸如一個或更多個飛桿),在電鍍覆過程期間可以在該支撐結構上安裝一個部件承載件結構或多個部件承載件結構。例如,傳送機構可以被配置用於向支撐結構或部件承載件結構提供運動力。 在一實施方式中,傳送機構被配置用於沿著陽極部分中的至少一些陽極部分在水準取向上傳送部件承載件結構,特別是沿著與陽極部分的取向平行的方向傳送部件承載件結構。優選地,板狀部件承載件結構(諸如面板)可以在電鍍覆設備中於電鍍覆過程期間被水準地定向。然後分離式陽極部分可以被佈置在水準定向的部件承載件結構之上或之下且平行於水準定向的部件承載件結構。替代性地,也可以在電鍍覆設備中於電鍍覆處理期間使用分離式陽極部分與豎向定向的部件承載件結構來執行電鍍覆。 在一實施方式中,控制單元被配置用於控制陽極或該方法包括控制陽極,以相比於部件承載件結構的延伸部之上的空間上無關的電流密度而言,在部件承載件結構上提供更均勻的鍍覆金屬的厚度分佈。因此,可以根據減少部件承載件結構之上的電鍍覆的金屬厚度分佈的不均勻性的控制方案來將陽極的延伸部之上的電流分佈選擇成空間上相關的分佈。 替代性地,控制單元可以被配置用於控制陽極或該方法包括控制陽極,以提供在豎向方向上具有不同高度的金屬結構(例如在部件承載件結構中的專用位置上)。例如,可能期望面板上的一個區段與一不同區段相比應該具有兩倍的待被鍍覆的銅的厚度。這也可以通過分離式陽極配置進行調整。儘管示例性實施方式的主旨可以是產生具有低銅厚度分佈或沒有銅厚度分佈的銅結構,但也可能存在期望有意產生不同銅厚度分佈的應用,即在部件承載件結構的不同區域中產生不同金屬厚度。 在一實施方式中,控制單元被配置用於或該方法包括確定訓示待被電鍍覆的部件承載件結構之上的金屬分佈的信息,以及調整或重新調整部件承載件結構的延伸部之上的空間上相關的電流密度分佈,以減小在部件承載件結構上的金屬分佈的厚度變化。 在前述實施方式的一個替代方案中,在執行電鍍覆過程時預期的部件承載件結構之上的金屬分佈可以在使用具有分離式陽極部分的電鍍覆設備實際執行電鍍覆過程之前進行理論建模或計算。這種理論建模或計算還可以考慮基於經處理的部件承載件結構製造的部件承載件的規範。所述規範可以特別地包括關於待通過電鍍覆過程形成的部件承載件結構的表面上的金屬圖案的信息。在預期的金屬分佈的這種理論確定的背景下,也可以考慮專家規則和/或經驗數據。例如,可以認為:與部件承載件結構的待被電鍍覆以形成較低密度的金屬結構的區域可能會顯示出較高的電鍍覆金屬厚度相比,部件承載件結構的的待被電鍍覆以形成較高密度的金屬結構的其他區域可能顯示出較低的電鍍覆金屬厚度。當這種理論確定表明預期會出現不均勻的電鍍覆金屬厚度分佈時,可以對分離式陽極部分的空間上相關的電流密度分佈進行調整,以使厚度分佈更加平衡。例如,面對部件承載件結構的具有較高密度的金屬結構的部分的陽極部分可能比面對部件承載件結構的具有較低密度的金屬結構的部分的其它陽極部分經受更高的電流密度。 在前述實施方式的另一替代方案中,可以在電鍍覆過程的部分之後執行電沉積金屬的厚度分佈的物理測量。例如,這種測量可以作為光學測量和/或作為電測量和/或以操作者的目視檢查的形式進行。此後,可以重新調整分離式陽極部分的空間上相關電流密度分佈,以平衡在電鍍覆過程的後續部分中測量的厚度分佈。 在一實施方式中,部件承載件結構包括面板、陣列或部件承載件,特別是印刷電路板。部件承載件可以包括疊置件,該疊置件包括至少一個電絕緣層結構和/或至少一個電傳導層結構。至少一個電傳導層結構可以連接到電極(特別是陰極或陽極)。 在一實施方式中,部件承載件結構或部件承載件的疊置件包括至少一個電絕緣層結構和至少一個電傳導層結構。例如,部件承載件可以是所提到的(多個)電絕緣層結構和(多個)電傳導層結構的層壓件,特別是通過施加機械壓力和/或熱能形成的層壓件。所提到的疊置件可以提供板狀部件承載件,該板狀部件承載件能夠為另外的部件提供大的安裝表面並且仍然非常薄和緊湊。 在一實施方式中,部件承載件結構或部件承載件被成形為板。這有助於緊湊的設計,其中部件承載件仍然為在其上的安裝部件提供了大的基底。此外,特別是作為嵌置式電子部件示例的裸晶片,由於其厚度小,可以被方便地嵌置到諸如印刷電路板的薄板中。 在一實施方式中,從部件承載件結構獲得的部件承載件被配置為包括印刷電路板、基板(特別是IC基板)和仲介層中的一種。 在本申請的上下文中,術語“印刷電路板”(PCB)可以具體表示板狀部件承載件,該板狀部件承載件通過將若干電傳導層結構與若干電絕緣層結構層壓在一起形成,例如,通過施加壓力和/或通過供應熱能來形成。作為PCB技術的優選資料,電傳導層結構由銅製成,而電絕緣層結構可以包括樹脂和/或玻璃纖維、所謂的預浸料或FR4資料。通過例如通過雷射鑽孔或機械鑽孔形成穿過層壓件的孔並且通過用電傳導資料(特別是銅)對這些孔進行部分地或完全地填充從而形成過孔或任何其他通孔連接部,各個電傳導層結構可以以期望的方式彼此連接。經填充的孔將整個疊置件連接(即,延伸穿過多個層或整個疊置件的通孔連接部),或者經填充的孔將至少兩個電傳導層連接,即所謂的過孔。類似地,光學互連部可以穿過疊置件的各個層而形成以接納電光電路板(EOCB)。除了可以嵌置在印刷電路板中的一個或更多個部件以外,印刷電路板通常構造成用於將一個或更多個部件容置在板狀印刷電路板的一個表面或相反的兩個表面上。所述一個或更多個部件可以通過焊接而連接至相應的主表面。PCB的介電部分可以包括具有增強纖維(比如,玻璃纖維)的樹脂。 在本申請的上下文中,術語“基板”可以具體表示小的部件承載件。基板可以是相對於PCB而言相當小的部件承載件,一個或更多個部件可以被安裝在基板上並且可以充當一個晶片或更多個晶片與另一PCB之間的連接介質。例如,基板可以具有與待安裝在其上的部件(特別是電子部件)基本上相同的尺寸(例如在晶片級封裝(CSP)的情况下)。在另一實施方式中,基板可以顯著顯著地大於指定部件(例如在倒裝晶片球栅陣列FCBGA構型中)。更具體地,基板可以被理解為這樣的承載件:用於電連接或電網的承載件;以及與印刷電路板(PCB)相當但具有相當高密度的橫向和/或豎向佈置的連接件的部件承載件。橫向連接件例如是電傳導通路,而豎向連接件例如可以是鑽孔。這些橫向和/或豎向連接件被佈置在基板內,並且可以被用於提供已容置部件或未容置部件(諸如裸晶片),特別是IC晶片與印刷電路板或中間印刷電路板的電連接、熱連接和/或機械連接。因此,術語“基板”也包括“IC基板”。基板的介電部分可以包括具有增強粒子(諸如增強球狀件,特別是玻璃球容置)的樹脂。 基板或仲介層可以包括以下各者中的至少一者的層或由以下各者中的至少一者的層構成:玻璃;矽(Si)以及/或者如環氧基堆疊資料(諸如環氧基堆疊膜)的感光的或可乾蝕刻的有機資料;或者,如聚醯亞胺或聚苯並惡唑的聚合物化合物(可能包括或不包括光敏和/或熱敏分子)。 在一實施方式中,所述至少一個電絕緣層結構包括以下各者中的至少一者:樹脂或聚合物,比如環氧樹脂、氰酸酯樹脂、苯並環丁烯樹脂或雙馬來醯亞胺-三嗪樹脂;聚亞苯基衍生物(例如,基於聚苯醚,PPE)、聚醯亞胺(PI)、聚醯胺(PA)、液晶聚合物(LCP)、聚四氟乙烯(PTFE)和/或其組合。也可以使用例如由玻璃(多層玻璃)製成的增強結構——比如網狀物、纖維、球狀件或其他種類的填充物顆粒——以形成複合物。與增強劑結合的半固化樹脂、例如用上述樹脂浸漬的纖維被稱為預浸料。這些預浸料通常是以它們的效能命名的,例如FR4或FR5,這些預浸料的效能描述了其阻燃效能。儘管預浸料特別是FR4對於剛性PCB而言通常是優選的,但是也可以使用其他資料特別是環氧基堆疊資料(比如,堆疊膜)或感光介電材料。對於高頻應用,高頻資料比如聚四氟乙烯、液晶聚合物和/或氰酸酯樹脂可以是優選的。除了這些聚合物以外,低溫共燒陶瓷(LTCC)或其他低的、非常低的或超低的DK資料可以作為電絕緣結構而應用在部件承載件中。 在一實施方式中,所述至少一個電傳導層結構包括以下各者中的至少一者:銅、鋁、鎳、銀、金、鈀、鎢、鎂、碳、(特別是摻雜的)矽、鈦和鉑。儘管銅通常是優選的,但是其他資料或其塗覆變型、特別是塗覆有超導材料或傳導性聚合物的變型也是可以的,超導材料或傳導性聚合物分別比如為石墨烯或聚(3,4-乙撐二氧噻吩(3,4-ethylenedioxythiophene))(PEDOT)。 至少一個部件可以嵌置在疊置件中和/或表面安裝在疊置件上。部件和/或所述至少一個另外的部件可以選自以下各者中的至少一者:非導電嵌體、導電嵌體(比如,金屬嵌體,優選地包括銅或鋁)、熱傳遞單元(例如,熱管)、導光元件(例如,光波導或光導體連接件)、電子部件或其組合。嵌體可以是例如帶有或不帶有絕緣材料塗層的金屬塊(IMS-嵌體),該金屬塊可以嵌置或表面安裝成用於促進散熱的目的。合適的資料是根據資料的熱導率限定的,熱導率應當為至少2 W/mK。這種資料通常是基於但不限於金屬、金屬氧化物和/或陶瓷,例如為銅、氧化鋁(Al 2O 3)或氮化鋁(AlN)。為了提高熱交換能力,也經常使用具有新增的表面面積的其他幾何形狀。此外,部件可以是有源電子部件(具有至少一個實現的p-n結)、無源電子部件比如電阻器、電感或電容器、電子晶片、存儲裝置(例如,DRAM或其他數據記憶體)、濾波器、集成電路(比如,現場可程式設計閘陣列(FPGA)、可程式設計陣列邏輯(PAL)、通用陣列邏輯(GAL)和複雜可程式設計邏輯器件(CPLD))、信號處理部件、功率管理部件(比如,場效應電晶體(FET)、金屬氧化物半導體場效應電晶體(MOSFET)、互補金屬氧化物半導體(CMOS)、結型場效應電晶體(JFET)、或絕緣栅場效應電晶體(IGFET),這些都是基於半導體材料的,該半導體材料比如是碳化矽(SiC)、砷化鎵(GaAs)、氮化鎵(GaN)、氧化鎵(Ga 2O 3)砷化銦鎵(InGaAs)、磷化銦(InP)、和/或任何其他合適的無機化合物)、光電介面元件、發光二極體、光耦合器、電壓轉換器(例如,DC/DC轉換器或AC/DC轉換器)、密碼部件、發射器和/或接收器、機電換能器、感測器、致動器、微機電系統(MEMS)、微處理器、電容器、電阻器、電感、電池、開關、攝像機、天線、邏輯晶片和能量收集單元。然而,其他部件也可以嵌置在部件承載件中。例如,磁性元件可以用作部件。這種磁性元件可以是永磁性元件(比如,鐵磁性元件、反鐵磁性元件、多鐵性元件或亞鐵磁性元件,例如鐵氧體芯)或者可以是順磁性元件。然而,該部件還可以是IC基板、仲介層或例如呈板中板構型的其他部件承載件。該部件可以表面安裝在部件承載件上和/或可以嵌置在部件承載件的內部中。此外,還可以使用其他部件、特別是產生和發射電磁輻射和/或對從環境傳播的電磁輻射敏感的部件來作為部件。 在一實施方式中,從部件承載件結構獲得的部件承載件是層壓型部件承載件。在這種實施方式中,部件承載件是通過施加壓力和/或熱而被疊置並連接在一起的多層結構的複合物。 在對部件承載件的內部層結構進行處理之後,可以用一個或更多個另外的電絕緣層結構和/或電傳導層結構(特別地,通過層壓)將經處理的層結構的一個主表面或相反的兩個主錶面對稱地或不對稱地覆蓋。換句話說,可以持續堆疊,直到獲得期望的層數為止。 在具有電絕緣層結構和電傳導層結構的疊置件的形成完成之後,可以對所獲得的層結構或部件承載件進行表面處理。 特別地,在表面處理方面,可以將電絕緣的阻焊部施加至層疊置件或部件承載件的一個主表面或相反的兩個主表面。例如,可以在整個主表面上形成這樣的阻焊部並且隨後對阻焊部的層進行圖案化以使一個或更多個電傳導表面部分暴露,所述一個或更多個電傳導表面部分將用於使部件承載件電耦合至電子外圍件。部件承載件的用阻焊部保持覆蓋的表面部分、特別是包含銅的表面部分可以被有效地保護以防氧化或腐蝕。 在表面處理方面,還可以選擇性地將表面處理部施加至部件承載件的暴露的電傳導表面部分。這種表面處理部可以是部件承載件的表面上的暴露的電傳導層結構(比如,焊盤、傳導跡線等,特別是包括銅或由銅組成)上的電傳導覆蓋資料。如果不對這種暴露的電傳導層結構進行保護,則暴露的電傳導部件承載件資料(特別是銅)會被氧化,從而使部件承載件的可靠性較低。此外,表面處理部可以形成為例如表面安裝部件與部件承載件之間的接合部。表面處理部具有保護暴露的電傳導層結構(特別是銅電路)的功能,並且表面處理部能夠例如通過焊接而實現與一個或更多個部件的接合處理。用於表面處理部的合適資料的示例是有機可焊性防腐劑(OSP)、非電鎳浸金(ENIG)、非電鎳浸鈀浸金(ENIPIG)、非電鎳非電鈀浸金(ENEPIG)、金(特別是硬金)、化學錫(化學和電鍍)、鎳金、鎳鈀等。也可以使用用於表面處理部的無鎳資料,特別是對於高速應用而言。示例是ISIG(浸銀浸金)和EPAG(非電鈀自催化金)。 上述定義的方面和本發明的其他方面從下文中描述的實施方式的示例中變得明顯,並且參考實施方式的這些示例進行了說明。 The object of the present invention is to allow the manufacture of component carriers with a well-defined thickness or thickness distribution with respect to electrically conductive structures. To achieve the above object, an electroplating apparatus and an electroplating method for electroplating component carrier structures according to exemplary embodiments of the present invention are provided. According to an exemplary embodiment of the present invention, a plating device for electroplating a component carrier structure is provided, wherein the plating device includes: an anode, which is divided into a plurality of separate anode parts, each anode part being configured to provide a separate current density (especially a separate controllable current density, separate from and independent of the current density of one or more other anode parts) to a designated section of the component carrier structure, so as to provide a spatially related current density distribution over an extension of the component carrier structure to be electroplated. According to an exemplary embodiment of the present invention, a method for electroplating a component carrier structure is provided, wherein the method comprises: dividing an anode into a plurality of separate anode portions, and providing a separate current density to a specified section of the component carrier structure through each anode portion, so as to provide a spatially related current density distribution over an extension of the component carrier structure to be electroplated. In the context of the present application, the term "component carrier" may specifically refer to any support structure capable of directly or indirectly accommodating one or more components thereon and/or therein to provide mechanical support and/or electrical connectivity. In other words, the component carrier may be configured as a mechanical and/or electronic carrier for components. Specifically, the component carrier can be one of a printed circuit board, an organic interposer and an IC (integrated circuit) substrate. The component carrier can also be a hybrid board combining different component carriers of the above-mentioned types of component carriers. In the context of the present application, the term "component carrier structure" can specifically refer to a physical structure including one or more component carriers or preforms thereof. For example, the component carrier structure can be the component carrier itself. It is also possible that the component carrier structure includes multiple component carriers, such as an array of component carriers or a panel including component carriers. In addition, it is also possible that the component carrier structure is a structure obtained during the manufacture of the component carrier, such as a panel or array of preforms including multiple component carriers that can still be connected as a whole. In the context of the present application, the term "electroplating" may specifically denote electroplating of a metal, in particular copper, using an aqueous solution (which may also be denoted as an electrolyte) containing the metal to be deposited as ions (e.g. in the form of a dissolved metal salt). During electroplating, an electric field may be applied between an anode and an at least partially electrically conductive workpiece in the form of a component carrier structure, which may serve as a cathode or may be electrically connected to a cathode. As a result, positively charged metal ions may be forced to move to the cathodic component carrier structure, where they give up their charge and deposit themselves as metal on the surface of the component carrier structure. Thus, the ions will be strongly forced by the electric field and the applied potential to pick up the negatively charged electrons provided by the cathode. During electroplating, a direct current (DC) can be applied between the anode and the cathode. This allows electroplating to be completed in a fast and efficient manner. However, electroplating can also be performed by applying a pulsed current (especially a current distribution with alternating pulses of positive and negative signs), wherein a short phase of the pulse with a negative sign can cause temporary metal removal instead of metal deposition, for example to compensate for overplating. When a pulsed current distribution is used, the uniformity of the thickness of the metal (especially copper) deposited on the surface of the component carrier structure can be improved. Exemplary embodiments of the present invention may use either direct current plating and pulsed plating of the component carrier structure. Thus, the electro-deposited metal structure on the component carrier structure may be formed by plating or electroplating. One or more plating stages may be performed to adjust the thickness of the electro-deposited metal layer, and in particular to selectively form multiple sub-layers of the electro-deposited metal layer. In the context of the present application, the term "anode" may specifically refer to an electrode immersed in a plating bath during electroplating. The anode may be an electrode to which a first (e.g., positive) voltage or current is applied (at least during the main part of the plating process). In contrast, a cathode may refer to another electrode used during electroplating and electrically connected to a component carrier structure to be plated during the electroplating process. A cathode may be an electrode to which a second (e.g., negative) voltage or current is applied (at least in the main part of the plating process). An anode may be defined as an electrode at which an oxidation reaction occurs. Correspondingly, a cathode may be defined as an electrode at which a reduction reaction occurs. In the context of the present application, the term "anodous portion configured to provide a separate current density" may specifically refer to electrically separated portions of a common electroplated anode, which portions may be configured so that separate currents with different current densities may be applied to different anode portions in the anode portion. The current density may represent the amount of charge flowing through a selected cross-sectional area at a time. The current density may be measured in amperes per square meter. Specifically, different anode parts may have electrically separated supply lines to a current source or rectifier, so that different current density values and different absolute current values may be selected and applied to each anode part. For example, a control unit may be provided for correspondingly controlling the current source and the anode parts. In the context of the present application, the term "providing a spatially correlated current density distribution over an extension of the component carrier structure" may specifically mean that the component carrier structure is spatially arranged relative to the anode portion and has a distance from the anode portion, so that different portions of the component carrier structure that are spatially aligned with the corresponding anode portion experience different plating current values so as to be plated with different plating efficiencies. There may be no direct physical contact between the anode portion and the component carrier structure to avoid electrical short circuits. For example, the above-mentioned spatial relationship between the parts of the component carrier structure and the anode parts can be adjusted during the movement of the component carrier structure along the electroplating line or when the component carrier structure is stationary (temporarily or permanently) at a certain position of the electroplating line. For example, in the case where the specification of the component carrier manufactured based on the component carrier structure requires different metal densities in different parts of the component carrier, applying the same current density to the entire component carrier structure may result in non-uniformity of copper thickness distribution. Therefore, a more uniform copper thickness distribution over the component carrier structure can be achieved by selecting different current densities for different anode parts. According to an exemplary embodiment of the present invention, an anode divided into a plurality of separate anode portions can be used to electroplate a component carrier structure. Each of the anode portions can be electrically connected to a current source so as to be controllable, thereby providing a separate current density, which can be selected differently for different anode portions and is independent of the current density of other anode portions. Each anode portion can be spatially assigned to a corresponding portion or section of the component carrier structure to be plated, so that a separate current density can be applied to each portion of the component carrier structure during electroplating. Since the component carrier structure can be used as a cathode or can be electrically connected to a cathode during the electroplating process, the efficiency of the electrometal deposition on different sections of the component carrier structure can be adjusted differently due to the different current densities of the anode parts. Therefore, inherent, design-related and/or artificially caused inhomogeneities of the copper deposition efficiency in different sections of the component carrier structure can be at least partially balanced or equalized by corresponding current density distributions provided by the separately powered anode parts. Descriptively speaking, inhomogeneities in the metal deposition efficiency of different sections of the component carrier structure can be at least partially compensated by an inverse inhomogeneity of the metal deposition efficiency set by the anode parts providing the correspondingly adjusted spatially related current density distributions. By providing a spatially correlated current density distribution over the extension of the component carrier structure to be electroplated, the copper thickness distribution over the extension of the component carrier structure can be made more uniform or at least more precisely definable. Advantageously, this can allow over-plating and under-plating of individual sections of the component carrier structure to be avoided. As a result, the yield of manufactured component carriers can be increased by reducing electroplating-related defects and the reliability of the obtained component carriers can be improved. Another advantageous technical effect of the exemplary embodiment is that dedicated sections or sections can have a different roughness compared to other sections or sections. For example, certain areas may be smooth and shiny, while other areas may be dull. Advantageously, this can be used for further manufacturing stages (in particular stages involving bonding). In the following, other exemplary embodiments of the electroplating apparatus and method will be described. In one embodiment, the electroplating apparatus includes a control unit, which is configured to individually control the current density applied to each anode portion in the anode portion. For example, such a control unit can be configured to execute an algorithm to limit the time correlation and/or spatial correlation of the current applied to each anode portion during the plating process. The corresponding control unit can thereby balance the metal thickness non-uniformity caused by undesirable phenomena in the case where the entire anode provides the same current density. In one embodiment, the control unit is configured to control the anode to adjust the spatially related current density distribution so that different sections of the component carrier structure are electroplated with different plating parameters. Specifically, the plating current and thus the plating efficiency can be controlled to be higher in a section of the component carrier structure that exhibits an inherently higher plating efficiency and is therefore subjected to a lower plating current, compared to another section of the anode portion of the component carrier structure that exhibits an inherently lower plating efficiency. In one embodiment, the control unit is configured to control the anode to adjust the spatially related current density distribution based on the temperature and/or pH value in the plating bath. For example, the temperature and/or pH value in the plating bath can be detected by corresponding sensors. Since the electrochemical reaction may strongly depend on the temperature and pH in the electrolytic bath, one or more pH and/or temperature sensors can be foreseen. Specifically, the potential and/or current can be adjusted according to the sensed pH value and/or the sensed temperature parameter. In one embodiment, the control unit is configured to dynamically control the current density applied to each anode portion, in particular to control the current density applied to each anode portion in a time-dependent manner. Advantageously, the spatially related current density distribution can be dynamically adjusted. Therefore, the control unit can control the anode portions so that their individually adjusted current densities vary with time. For example, in the case where the component carrier structure moves along the coating line and thereby passes by the stationary anode, the current density of each individual anode portion can be adjusted over time so that at each point in time, the currently designated section of the component carrier structure is subjected to a correspondingly adjusted current density of the currently designated anode portion. It is also possible that after the first part of the electroplating process, an uneven thickness distribution of the coating metal over the extension of the component carrier structure is determined, for example detected and/or modeled. In this case, the spatially related current density distribution resulting from the anode portions and their individual current densities can be selectively modified to at least partially compensate for the determined inhomogeneities. In one embodiment, the control unit is configured to control the anodic portion and additionally to control at least one subtractive process for removing metal from the component carrier structure (in that case, a portion of the component carrier may also be a portion of the anode). Such a subtractive process may be a process for removing portions of metal from the component carrier structure. For example, such a subtractive process may be etching or mechanical grinding. It is also possible that such a subtractive process forms part of an electroplating process with a reverse current, for example in pulse plating. In the case of an inhomogeneous metal distribution, there may be sections of the component carrier structure with a higher deposition rate (e.g. sections with a smaller target metal area according to the specification). In order to at least partially compensate for this phenomenon, a negative current can be temporarily applied through the anodic portions of the anodic portions that are spatially assigned to the segments of the component carrier structure, which can lead to temporary metal removal in these segments. By taking this measure, local overplating can be suppressed. In one embodiment, the control unit is configured to control the anodic portions and additionally control at least one additive process for applying metal to the component carrier structure, thereby providing a predefined, in particular uniform, metal distribution on the component carrier structure. In the case of an inhomogeneous metal distribution, there may be segments of the component carrier structure with a lower deposition rate (e.g., segments with more target metal area according to the specification). In order to at least partially balance these phenomena, an additional additive process can be performed to locally thicken the metal in such a section of the component carrier structure. For example, such an additional additive process can be a further electroplating stage that is selectively performed only on such a section of the component carrier structure. It is also possible to add metal to certain sections of the component carrier structure in a spatially related manner by electroless deposition, sputtering, chemical deposition of metal, etc. By taking such measures, local under-plating can be avoided. In one embodiment, the control unit is configured to control the current density applied to each anode part, so that a metal pattern is formed on the component carrier structure according to a predefined target specification. For example, the design of a component carrier to be manufactured (e.g., a printed circuit board) can be stored in a design file, which includes data defining the target specifications for multiple parameters of the manufacturing process. The design file may also include information about the shape and position of the metal pattern of the component carrier and the target thickness. The control unit can access information indicating the predefined design (e.g., the design file mentioned above can be accessed), and the electroplating process can be performed, and in particular, the separated anode parts and their respective current densities can be controlled. In an embodiment with a constant current plating mode, the current density can be fixed, and the applied potential can be variable. However, it is also possible that the potential is fixed in an embodiment, while the current density is variable (this can be represented as a constant potential plating mode). In one embodiment, the control unit is configured to control the current density applied to each anode portion so as to form a metal pattern with uniform thickness on the component carrier structure. This may also include the process of filling cavities and/or through-holes. Therefore, the control goal of the control unit may be to achieve a metal pattern of the same thickness over the entire component carrier structure. In order to achieve this control goal, the inherent spatially related metal plating efficiency in different sections of the component carrier structure may be taken into account. Specifically, this may include taking into account the phenomenon that the actually obtained metal thickness may depend on the ratio of the metallized surface area to the entire surface area of a specific section of the component carrier structure according to a predefined specification. Typically, a higher metal thickness is obtained in areas with a lower ratio and vice versa. The control unit can calculate and apply a spatially related current density distribution of the anode parts to compensate for this phenomenon, that is, providing a higher current density distribution in a higher ratio section of the component carrier structure. In one embodiment, the control unit is configured to apply different potentials to different anode parts. Therefore, different anode parts may have different voltages relative to the cathode formed by the component carrier structure. In one embodiment, different anode parts have different local sections. By providing different anode parts with different local sections, additional design parameters are provided for producing spatially related metal deposition efficiency distributions. In one embodiment, the electroplating apparatus comprises a plurality of electroplating cells through which the component carrier structure is sequentially conveyed during electroplating, wherein at least one of the electroplating cells comprises an anode, in particular each of the electroplating cells comprises an anode which is divided into a plurality of separate anode portions. For example, the component carrier structure to be electroplated may be sequentially moved through the plurality of electroplating cells. For example, electroplating may be started after imaging the component carrier structure with a dry film corresponding to the metal pattern formed by electrodeposition. Thereafter, one or more electroplating stages, for example copper plating, may be carried out in one electroplating tank or in a plurality of electroplating tanks arranged in series. Thereafter, it is possible to form a surface treatment, for example by plating a thin layer of tin on the electroplated copper. One, some or all of the electroplating tanks may be equipped with separate anodes providing a spatially relevant current density distribution. This may promote uniform metal deposition in each individual electroplating tank. In addition, this can also advantageously allow a subsequent electroplating cell to adjust the current density distribution of its split anode to compensate for the uneven metal deposition of the previous electroplating cell. Before the component carrier structure is treated in one or more electroplating cells, the component carrier structure can be subjected to pre-treatment, such as cleaning and/or micro-etching. After the component carrier structure is treated in one or more electroplating cells, the component carrier structure can be subjected to post-treatment, such as rinsing and/or drying. In one embodiment, at least some of the anode portions are V or chevron shaped. Therefore, a V or chevron shaped pattern can be generated by the anode portion. An example of this design is shown in Figure 4. This V or ∧-shaped design of the anode portion of a separate anode or a plurality of separate anodes arranged serially has proven to be very suitable for triggering uniform metal deposition. By means of this V or ∧-shaped shape, it has been shown that the boundary portions between different sections of the panel-type component carrier structure can be appropriately influenced. In one embodiment, at least some of the anode portions have at least one sawtooth edge. Again, reference is made to FIG. 4 , which shows this sawtooth edge. The saw-shaped edge may be formed by a series of connected straight edge portions with an alternating sequence of inwardly tapering edge portions and outwardly tapering edge portions. For example, the inwardly tapering angle or the outwardly tapering angle of such edge portions measured relative to a linear edge (e.g. extending in a conveying direction of the component carrier structure) may be less than 30°, in particular less than 20°. In an embodiment, the anode divided into anode portions has an overall rectangular shape. Even when the individual anode parts are provided with V- or ∧-shaped edges and/or saw-shaped edges, the anode as a whole (i.e. formed by the anode parts as components) can also have a rectangular shape. The rectangular shape can correspond to the rectangular shape of the component carrier structure (in particular a panel) that is subjected to electroplating using the anode. This may help to form a uniform coating metal thickness over the extension of the component carrier structure. In one embodiment, the anode is divided into a plurality of individual anode parts in the conveying direction and/or transversely to the conveying direction, along which the component carrier structure is to be conveyed during electroplating. For example, one or more component carrier structures (e.g., four panel-type component carrier structures) can be mounted on one or more support structures and can be conveyed through one or more electroplating tanks. The support structure can create an electrical connection of at least one component carrier structure to a power source or a rectifier. When mounted on the support structure, at least one component carrier structure can then act as a cathode during the plating process. When conveyed through one or more electroplating tanks, the component carrier structure can pass through anode portions arranged along the conveying direction of the component carrier structure and/or anode portions arranged perpendicular to the conveying direction. Thus, the generation of a spatially correlated current density distribution can be accomplished along and/or transversely to the conveying direction. This may allow for further refinement of the electroplating process and in particular its ability to produce a metal structure of uniform thickness over the entire extension of the component carrier structure. In one embodiment, the electroplating apparatus comprises: a cathode electrically coupled to the component carrier structure to be electroplated; and at least one current source configured to apply an electric current with a selectable current density distribution between the anode and the cathode. The cathode may be electrically coupled to an electrically conductive structure of the component carrier structure so that the component carrier structure may also serve as a cathode during the electroplating process. If metal is removed from the component carrier structure by means of a reverse current flow (see the subtractive process described above), the component carrier structure may temporarily serve as an anode. Optionally, the component carrier may include an electrical decoupling portion, an anode portion and a cathode portion within the component carrier structure to prevent short circuits when current is applied. In one embodiment, the number of anodes and the number of cathodes may be different. Therefore, there may be different numbers of cathodes and anodes. Alternatively, there may be the same number of cathodes and anodes. In one embodiment, the electroplating apparatus includes a conveying mechanism for conveying the component carrier structure along the anodes, in particular, conveying the component carrier structure along at least a portion of the continuously arranged anode portions. Such a conveying mechanism can also drive a supporting structure (such as one or more flying rods), on which a component carrier structure or multiple component carrier structures can be mounted during the electroplating process. For example, the conveying mechanism can be configured to provide motive force to the supporting structure or the component carrier structure. In one embodiment, the conveying mechanism is configured to convey the component carrier structure in a horizontal orientation along at least some of the anode parts, in particular, to convey the component carrier structure in a direction parallel to the orientation of the anode parts. Preferably, the plate-like component carrier structure (such as a panel) can be horizontally oriented in the electroplating device during the electroplating process. The separated anode part can then be arranged above or below and parallel to the horizontally oriented component carrier structure. Alternatively, electroplating can also be performed in an electroplating apparatus using the separated anode part and the vertically oriented component carrier structure during the electroplating process. In one embodiment, the control unit is configured to control the anode or the method includes controlling the anode to provide a more uniform thickness distribution of the plating metal on the component carrier structure compared to a spatially independent current density over an extension of the component carrier structure. Thus, the current distribution over the extension of the anode can be selected to be a spatially related distribution according to a control scheme that reduces the unevenness of the thickness distribution of the electroplated metal over the component carrier structure. Alternatively, the control unit can be configured to control the anode or the method includes controlling the anode to provide a metal structure with different heights in the vertical direction (for example, at a dedicated position in the component carrier structure). For example, it may be desired that one section on the panel should have twice the thickness of the copper to be plated compared to a different section. This can also be adjusted by a split anode configuration. Although the subject matter of exemplary embodiments may be to produce a copper structure with a low copper thickness distribution or no copper thickness distribution, there may also be applications where it is desirable to intentionally produce different copper thickness distributions, i.e., to produce different metal thicknesses in different regions of a component carrier structure. In one embodiment, the control unit is configured to or the method includes determining information indicative of a metal distribution over a component carrier structure to be electroplated, and adjusting or re-adjusting a spatially related current density distribution over an extension of the component carrier structure to reduce thickness variations of the metal distribution over the component carrier structure. In an alternative to the aforementioned embodiment, the metal distribution on the component carrier structure to be expected when performing the electroplating process can be theoretically modeled or calculated before the electroplating process is actually performed using an electroplating device with a separated anode part. This theoretical modeling or calculation can also take into account the specifications of the component carrier manufactured based on the processed component carrier structure. The specifications can in particular include information about the metal pattern on the surface of the component carrier structure to be formed by the electroplating process. In the context of this theoretical determination of the expected metal distribution, expert rules and/or empirical data can also be taken into account. For example, it may be believed that areas of the component carrier structure to be plated to form a higher density metal structure may exhibit lower plated metal thicknesses than areas of the component carrier structure to be plated to form a lower density metal structure may exhibit higher plated metal thicknesses. When such theoretical determination indicates that a non-uniform plated metal thickness distribution is expected, the spatially related current density distribution of the split anode portion may be adjusted to achieve a more balanced thickness distribution. For example, an anode portion facing a portion of a component carrier structure having a higher density of metal structures may be subjected to a higher current density than other anode portions facing a portion of a component carrier structure having a lower density of metal structures. In another alternative to the aforementioned embodiment, a physical measurement of the thickness distribution of the electro-deposited metal may be performed after part of the electroplating process. For example, such a measurement may be performed as an optical measurement and/or as an electrical measurement and/or in the form of a visual inspection by an operator. Thereafter, the spatially related current density distribution of the separated anode portions may be readjusted to balance the thickness distribution measured in a subsequent part of the electroplating process. In one embodiment, the component carrier structure comprises a panel, an array or a component carrier, in particular a printed circuit board. The component carrier may comprise a stack comprising at least one electrically insulating layer structure and/or at least one electrically conductive layer structure. The at least one electrically conductive layer structure may be connected to an electrode, in particular a cathode or an anode. In one embodiment, the component carrier structure or the stack of component carriers comprises at least one electrically insulating layer structure and at least one electrically conductive layer structure. For example, the component carrier may be a laminate of the mentioned electrically insulating layer structure(s) and electrically conductive layer structure(s), in particular a laminate formed by applying mechanical pressure and/or heat energy. The mentioned stacking piece can provide a plate-like component carrier that can provide a large mounting surface for additional components and still be very thin and compact. In one embodiment, the component carrier structure or the component carrier is formed as a plate. This contributes to a compact design, wherein the component carrier still provides a large base for mounting components thereon. In addition, bare chips, in particular as an example of embedded electronic components, can be conveniently embedded into thin plates such as printed circuit boards due to their small thickness. In one embodiment, the component carrier obtained from the component carrier structure is configured to include one of a printed circuit board, a substrate (in particular an IC substrate) and an intermediate layer. In the context of the present application, the term "printed circuit board" (PCB) may specifically denote a plate-like component carrier formed by pressing together several electrically conductive layer structures and several electrically insulating layer structures, for example, by applying pressure and/or by supplying thermal energy. As a preferred material for PCB technology, the electrically conductive layer structure is made of copper, while the electrically insulating layer structure may include resin and/or glass fiber, so-called prepreg or FR4 material. The various electrically conductive layer structures can be connected to each other in a desired manner by forming holes through the laminate, for example by laser drilling or mechanical drilling, and by partially or completely filling these holes with electrically conductive material, in particular copper, thereby forming vias or any other through-hole connections. The filled holes connect the entire stack (i.e., through-hole connections extending through multiple layers or the entire stack), or the filled holes connect at least two electrically conductive layers, i.e., so-called vias. Similarly, optical interconnects can be formed through the various layers of the stack to accommodate electro-optical circuit boards (EOCBs). In addition to one or more components that can be embedded in the printed circuit board, the printed circuit board is generally configured to accommodate one or more components on one surface or two opposite surfaces of the plate-shaped printed circuit board. The one or more components can be connected to the corresponding main surface by welding. The dielectric portion of the PCB can include a resin with reinforcing fibers (such as glass fibers). In the context of this application, the term "substrate" can specifically represent a small component carrier. The substrate can be a relatively small component carrier relative to the PCB, and one or more components can be mounted on the substrate and can serve as a connecting medium between one chip or more chips and another PCB. For example, the substrate can have substantially the same size as the component to be mounted thereon (especially an electronic component) (for example, in the case of a chip level package (CSP)). In another embodiment, the substrate can be significantly larger than the specified component (for example, in a flip chip ball grid array FCBGA configuration). More specifically, a substrate can be understood as a carrier for electrical connections or electrical grids, and a component carrier for lateral and/or vertically arranged connectors that are comparable to a printed circuit board (PCB) but have a relatively high density. The lateral connectors are, for example, electrical conduction paths, while the vertical connectors can be, for example, drill holes. These lateral and/or vertical connectors are arranged in the substrate and can be used to provide electrical, thermal and/or mechanical connections between accommodated components or non-accommodated components (such as bare chips), in particular IC chips, and a printed circuit board or an intermediate printed circuit board. Therefore, the term "substrate" also includes "IC substrate". The dielectric part of the substrate may include a resin with reinforcing particles (such as reinforcing spherical members, in particular glass ball accommodation). The substrate or the intermediate layer may include or be composed of a layer of at least one of the following: glass; silicon (Si) and/or a photosensitive or dry-etchable organic material such as an epoxy stack material (such as an epoxy stack film); or a polymer compound such as polyimide or polybenzoxazole (which may or may not include photosensitive and/or heat-sensitive molecules). In one embodiment, the at least one electrically insulating layer structure comprises at least one of the following: a resin or a polymer, such as an epoxy resin, a cyanate resin, a benzocyclobutene resin or a bismaleimide-triazine resin; a polyphenylene derivative (e.g., based on polyphenylene ether, PPE), a polyimide (PI), a polyamide (PA), a liquid crystal polymer (LCP), polytetrafluoroethylene (PTFE) and/or a combination thereof. Reinforcement structures such as meshes, fibers, spheres or other types of filler particles, such as glass (multilayer glass), may also be used to form a composite. Semi-cured resins combined with reinforcing agents, such as fibers impregnated with the above resins, are called prepregs. These prepregs are often named after their performance, such as FR4 or FR5, which describes their flame retardant performance. Although prepregs, especially FR4, are generally preferred for rigid PCBs, other materials, especially epoxy-based laminate materials (e.g., laminate films) or photosensitive dielectric materials may also be used. For high frequency applications, high frequency materials such as polytetrafluoroethylene, liquid crystal polymers and/or cyanate ester resins may be preferred. In addition to these polymers, low temperature co-fired ceramics (LTCC) or other low, very low or ultra-low DK materials may be used as electrical insulating structures in component carriers. In one embodiment, the at least one electrically conductive layer structure comprises at least one of the following: copper, aluminum, nickel, silver, gold, palladium, tungsten, magnesium, carbon, (particularly doped) silicon, titanium and platinum. Although copper is generally preferred, other materials or coated variations thereof, particularly coated with superconducting materials or conductive polymers, such as graphene or poly (3,4-ethylenedioxythiophene) (PEDOT), respectively, are also possible. At least one component may be embedded in the stack and/or surface mounted on the stack. The component and/or the at least one further component may be selected from at least one of the following: a non-conductive inlay, a conductive inlay (e.g. a metal inlay, preferably comprising copper or aluminum), a heat transfer unit (e.g. a heat pipe), a light-conducting element (e.g. an optical waveguide or a light-conductor connector), an electronic component or a combination thereof. The inlay may be, for example, a metal block with or without a coating of insulating material (IMS-inlay), which may be embedded or surface mounted for the purpose of promoting heat dissipation. Suitable materials are defined according to the thermal conductivity of the material, which should be at least 2 W/mK. Such materials are typically based on, but not limited to, metals, metal oxides and/or ceramics, such as, for example, copper, aluminum oxide (Al 2 O 3 ) or aluminum nitride (AlN). Other geometric shapes with increased surface area are also often used to increase heat exchange capabilities. In addition, the components can be active electronic components (having at least one realized pn junction), passive electronic components such as resistors, inductors or capacitors, electronic chips, storage devices (e.g., DRAM or other data memory), filters, integrated circuits (e.g., field programmable gate arrays (FPGAs), programmable array logic (PALs), general purpose array logic (GALs), and complex programmable logic devices (CPLDs)), signal processing components, power management components (e.g., field effect transistors (FETs), metal oxide semiconductor field effect transistors (MOSFETs), complementary metal oxide semiconductors (CMOSs), junction field effect transistors (JFETs), or insulated gate field effect transistors (IGFETs), all of which are based on semiconductor materials such as silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), gallium oxide (Ga 2 O 3 ) indium gallium arsenide (InGaAs), indium phosphide (InP), and/or any other suitable inorganic compound), optoelectronic interface elements, light emitting diodes, optocouplers, voltage converters (e.g., DC/DC converters or AC/DC converters), cryptographic components, transmitters and/or receivers, electromechanical transducers, sensors, actuators, microelectromechanical systems (MEMS), microprocessors, capacitors, resistors, inductors, batteries, switches, cameras, antennas, logic chips and energy harvesting units. However, other components may also be embedded in the component carrier. For example, a magnetic element may be used as a component. Such a magnetic element may be a permanent magnetic element (e.g., a ferromagnetic element, an antiferromagnetic element, a multiferroic element or a ferrimagnetic element, such as a ferrite core) or may be a paramagnetic element. However, the component can also be an IC substrate, an intermediate layer or other component carrier, for example in a board-in-board configuration. The component can be surface-mounted on the component carrier and/or can be embedded in the interior of the component carrier. In addition, other components can also be used as components, in particular components that generate and emit electromagnetic radiation and/or are sensitive to electromagnetic radiation propagated from the environment. In one embodiment, the component carrier obtained from the component carrier structure is a laminated component carrier. In this embodiment, the component carrier is a composite of a multi-layer structure that is stacked and connected together by applying pressure and/or heat. After the internal layer structure of the component carrier is processed, one main surface or two opposite main surfaces of the processed layer structure can be covered symmetrically or asymmetrically with one or more additional electrically insulating layer structures and/or electrically conductive layer structures (in particular, by lamination). In other words, the stacking can be continued until the desired number of layers is obtained. After the formation of the stack having the electrically insulating layer structure and the electrically conductive layer structure is completed, the obtained layer structure or component carrier can be surface treated. In particular, in terms of surface treatment, an electrically insulating solder resist can be applied to one main surface or two opposite main surfaces of the layer stack or component carrier. For example, such a solder resist may be formed over the entire major surface and the layer of the solder resist may be subsequently patterned to expose one or more electrically conductive surface portions, which will be used to electrically couple the component carrier to the electronic peripheral. The surface portions of the component carrier that remain covered with the solder resist, particularly the surface portions containing copper, may be effectively protected from oxidation or corrosion. In terms of surface treatment, a surface treatment may also be selectively applied to the exposed electrically conductive surface portions of the component carrier. Such a surface treatment may be electrically conductive covering material on exposed electrically conductive layer structures (e.g., pads, conductive traces, etc., particularly comprising or consisting of copper) on the surface of the component carrier. If such an exposed electrically conductive layer structure is not protected, the exposed electrically conductive component carrier material (especially copper) will be oxidized, thereby making the reliability of the component carrier low. In addition, the surface treatment portion can be formed as, for example, a joint between a surface mounted component and a component carrier. The surface treatment portion has the function of protecting the exposed electrically conductive layer structure (especially the copper circuit), and the surface treatment portion can achieve a joint process with one or more components, for example, by welding. Examples of suitable materials for the surface treatment portion are organic solderability preservative (OSP), electroless nickel immersion gold (ENIG), electroless nickel immersion palladium immersion gold (ENIPIG), electroless nickel electroless palladium immersion gold (ENEPIG), gold (especially hard gold), chemical tin (chemical and electroplating), nickel gold, nickel palladium, etc. Nickel-free materials for the surface treatment may also be used, in particular for high-speed applications. Examples are ISIG (immersion silver immersion gold) and EPAG (electroless palladium autocatalytic gold). The above-defined aspects and further aspects of the invention will become apparent from the examples of embodiment described hereinafter and will be elucidated with reference to these examples of embodiment.

圖式中的圖解係示意性的。在不同圖式中,相似或相同的元件被提供有相同的元件編號。 在參考附圖更詳細地描述示例性實施方式之前,將總結一些基本構想,本發明的示例性實施方式是基於這些基本構想發展而來的。 傳統上,經鍍覆的部件承載件結構(諸如PCB面板)的銅厚度均一性可能是不足的。這可能導致缺陷並因此導致低產量。特別是對於高密度應用(例如,具有35µm/35µm線迹寬度以及所需的例如26µm銅厚度的應用),產量非常受限。在傳統的鍍覆過程期間,只能在鍍覆控制方面影響整個面板。 根據本發明的示例性實施方式,使用陽極(即,至少暫時性地向其施加帶正號的電壓或電流的鍍覆電極)執行在部件承載件結構(如同用於形成印刷電路板的面板)的選定電傳導表面部分上沉積金屬(優選為銅)的電鍍覆過程,上述陽極在空間上和電學上被分成多個單獨的(特別是電去耦的)陽極部分。不同的陽極部分可以被單獨地控制,以便為待被電鍍覆的部件承載件結構的不同指定部段提供不同的電流密度值。通過採取這種措施,可以使部件承載件結構經受空間上相關的電流密度分佈。使鍍覆浴中的部件承載件結構的不同部分經受不同電流的區域可以引起電鍍金屬沉積的空間上變化的效率分佈。因此,在(例如鍍覆過程的)人工製品可能導致部件承載件結構上的鍍覆金屬的厚度分佈出現無意的空間變化的情况下,對應的反向電流密度分佈可以至少部分地補償部件承載件結構的不同區域上的厚度差異。因此,在陽極的不同空間區域中具有單獨可選擇的電流密度值的分離式陽極配置可以引起部件承載件結構上的金屬的明確限定或更均勻的厚度分佈。 具體地,可以使部件承載件結構的芯層上的銅厚度分佈更加均勻。更具體地,可以提供一種鍍覆結構,該鍍覆結構執行分離式陽極部分的電流密度調整以改善銅厚度均一性。有利地,這種鍍覆結構可以特別地應用於水準鍍覆線以改善銅厚度均一性。有利地,在鍍覆期間,可以對陽極電流分佈進行劃分以獲得均一的銅沉積。特別是,可以重新調整電流分佈以改善先前不足的銅厚度均一性。根據本發明的示例性實施方式,可以將鍍覆陽極劃分為不同的陽極部分來控制二次場,以通過使電流密度重新分佈來改善銅厚度均勻性。通過適當控制水準鍍覆線中的這種劃分的陽極,可以獲得銅厚度輸出的精細化。具體地,對於在水準鍍覆線中製造具有高密度集成(HDI)金屬結構的部件承載件,使用在電流供應方面可單獨控制的陽極部分形成空間上相關的電流密度分佈已證明是高效的。有利地,本發明的示例性實施方式可以實現單獨的分離式陽極部分的部分電流輸出以調整銅厚度。具體地,這可以允許應對部件承載件結構的其中銅厚度可能需要重新調整的特定區段或關鍵區段。 根據本發明的示例性實施方式,部件承載件結構(諸如面板)的部分區段可以通過各個分離式陽極部分的電流密度調整來控制。這可以允許單獨地調整特定區段的銅厚度。這可以允許匹配甚至苛刻的細線迹寬度要求。描述性地講,本發明的示例性實施方式可以將部件承載件結構分成不同的部段,其中具有空間上相關的電流密度分佈的分離式陽極方法可以允許單獨地影響部件承載件結構的部分區段的銅厚度輸出。從銅侵蝕過程或銅添加過程來看,銅的厚度可以被減小或增大,並且銅的厚度可以由於裝備的結構而具有其均一性的特點。例如,減材過程可以具有三個銅厚度減小過程和三個銅厚度增大過程。此外,可以通過最終的侵蝕銅厚度來產生圖案。銅厚度減小過程可能導致銅厚度偏差。其他偏差可能來自銅厚度增大過程。 根據本發明的示例性實施方式,可以執行用於銅沉積的水準鍍覆線的不同陽極部分的電流密度調整,以改善經處理的部件承載件結構(諸如面板)之上的整體厚度均一性。 在鍍覆過程期間,面板之上的銅厚度分佈通常可能缺乏足夠的均一性,例如由於先前過程的影響(例如,為了清潔和粗糙化目的,可能蝕刻掉表面銅,但由此使銅厚度的分佈惡化)。通過將陽極分成可以被施以不同電流值以產生空間電流密度分佈的多個單獨可控的陽極部分,所劃分的電流可以允許構建具有空間平衡的銅厚度的銅層。通過使用分離式陽極方法在浸入鍍覆浴中的部件承載件結構的延伸部上產生空間上相關的電流密度分佈,可以減少容易製造的部件承載件的缺陷並且可以改善產量。簡而言之,可以在空間上劃分陽極電流分佈以平衡沉積銅的變化。通過採取這種措施,可以增強鍍覆過程以改善銅厚度分佈,特別是對於HDI過程。 圖1圖示了根據本發明的示例性實施方式的用於對部件承載件結構102進行電鍍覆的電鍍覆設備100。圖示的電鍍覆設備100可以被配置用於在部件承載件結構102的電傳導表面上電鍍銅。例如,後者可以是用於製造印刷電路板(PCB)型部件承載件的板狀面板(例如,具有21.25 x 24.3平方英寸的尺寸)。所示的電鍍覆設備100被具體化為水準鍍覆線,特別適用於下麵描述的分離式陽極方法。然而,也可以在豎向鍍覆線中實現示例性實施方式。 所示的電鍍覆設備100包括鍍覆槽110,鍍覆槽110填充有包括銅源諸如溶解的銅鹽的含水鍍覆溶液152。含水鍍覆溶液152是電解質。待被鍍覆銅的部件承載件結構102可以被(例如,單獨或與一個或更多個其他部件承載件結構一起,未示出)安裝在支撐結構(未示出)諸如電夾持件上。當被安裝在這種支撐結構上時,部件承載件結構102可以在水準方向上沿著電鍍覆設備100被傳送。 此外,電鍍覆設備100可以包括用於在銅鍍覆過程期間提供電流的電流源116。在所示實施方式中,電流源116提供的電流可以是直流(DC)。在另一實施方式中,也可以提供脈衝電流。電流源116的負極可以直接地或通過電傳導支撐結構與部件承載件結構102的電傳導結構(例如種子層)電連接。通過採取這種措施,部件承載件結構102可以在鍍覆過程期間充當陰極114。電流源116的正極可以與同樣浸入鍍覆溶液152的陽極104電連接。 如圖所示,陽極104被分成多個單獨的陽極部分106。不同的陽極部分106可以具有不同的局部區段或者可以具有相同的局部區段。每個單獨的陽極部分106被配置用於向部件承載件結構102的空間上指定的(例如直接面對的)部段120提供單獨的電流密度。更具體地,可以將不同的電流密度施加至不同的陽極部分106。這可以通過控制單元108為每個單獨的陽極部分106提供來自電流源116的單獨可選擇的電流密度來實現。通過分別地將單獨可調整的電流密度值施加至陽極部分106中的每個相應的陽極部分106,可以在電鍍覆過程期間在部件承載件結構102的延伸部之上產生空間上相關的電流密度分佈。僅作為示例,施加至陽極部分106’(例如位於圖1的左側)的電流密度可以不同於施加至陽極部分106”(例如位於圖1的右側)的另一電流密度。與此相反,提供給陰極114的電流對於部件承載件結構102的所有部段120可以是相同的。 例如,可以在陽極104與陰極114之間施加電勢差。所獲得的電流可以是以不同的方式施加的電勢的均衡反應的結果。當在陰極114處施加公共電勢或電壓時,可以由施加在陽極部分106’和106”處的不同電壓產生不同的電流密度。陰極114與陽極部分106’之間的電勢差引起第一電流密度,而陰極114與陽極部分106”之間的電勢差導致另一第二電流密度。 結果,在位於陽極部分106’與部件承載件結構102的指定部段120’之間的區域154中的電解質152中的電流流動可以不同於在位於陽極部分106”與部件承載件結構102的指定部段120”之間的區域156中的電解質152中的電流流動。因此,部段120’上的銅電沉積的效率可以被調整為不同於部段120”上的銅電沉積的效率。在如下的情形中,可以通過適當地調整陽極部分106’和106”中的電流密度以部分或完全地補償偽影來改善區域120’和120”中銅厚度的均勻性:所述的情形為由於該不期望的偽影,部段120’和120”中銅的電沉積的本徵效率是不同的(例如,由於所述部段120’、120”中不同的集成密度),這可能導致部段120’、120”中出現不需要的不同銅厚度。 為此目的,控制單元108可以被配置用於單獨地控制施加至每個陽極部分106的電流密度,以增強在部件承載件結構102的整個延伸部之上的所沉積的金屬厚度均勻性。因此,控制單元108可以被配置用於控制施加至每個陽極部分106的電流密度,從而在部件承載件結構102上形成具有基本上均勻厚度的金屬圖案。具體地,與在部件承載件結構102的延伸部之上的空間上無關的電流密度相比,可以控制陽極104的分離式陽極部分106,以在部件承載件結構102上提供鍍覆金屬的更均勻的厚度分佈。更具體地,控制單元108可以被配置用於控制陽極104以調整空間上相關的電流密度分佈,使得部件承載件結構102的不同部段120可以分別以不同的鍍覆參數,特別是不同的鍍覆效率或金屬沉積速率,被電鍍覆。 有利地,控制單元108也可以被配置用於動態地控制施加至每個陽極部分106的電流密度隨時間的變化。因此,陽極104之上的空間電流密度分佈可以隨時間而被改變。例如,當確定在部件承載件結構102的延伸部之上明顯的銅厚度不均勻性時,可以修改電流分佈以至少部分地平衡所述不均勻性。例如,可以通過操作者的目視檢查和/或通過基於機器的測量(例如通過光學照相機和/或通過測量不同區域120中所沉積的金屬的電導率)來執行所述確定。通過不僅在空間上而且隨時間調整或改變電流密度分佈,可以進一步精細化對鍍覆過程的控制。 當動態地控制各個陽極部分106的電流密度值時,控制單元108可以被配置用於確定訓示待被電鍍覆的部件承載件結構102之上的金屬分佈的信息。然後控制單元108可以被配置用於調整或重新調整部件承載件結構102的延伸部之上的空間上相關的電流密度分佈,以減小整個部件承載件結構102之上的金屬分佈的厚度變化。可以通過如上所述的操作員和/或通過如上所述的基於機器的測量來完成確定所述信息。如果所述確定的結果出現缺陷,則控制單元108可以採取對策以減少甚至消除所述缺陷。所述對策可以包括對陽極104與部件承載件結構102之間的電流密度分佈進行對應調整。所述調整可以通過對應調整或重新調整對各個陽極部分106的電流供應來進行。 在實施方式中,控制單元108可以被配置用於控制陽極部分106以及附加地控制至少一個用於從部件承載件結構102去除金屬的減材過程(諸如蝕刻或研磨過程)以控制部件承載件結構102上的金屬分佈(特別是金屬厚度)。另外地或替代性地,控制單元108可以被配置用於控制陽極部分106和至少一個將金屬施加至部件承載件結構102的增材過程(例如濺射)。可以在圖示的電鍍覆過程之前和/或之後進行所提到的減材過程和/或增材過程。通過還考慮增材式金屬供應過程和/或減材式金屬去除過程結合電鍍覆過程的調整,有可能進一步增強金屬在部件承載件結構102上的分佈均勻性。 在優選的實施方式中,控制單元108被配置用於控制施加至每個陽極部分106的電流密度,從而根據預定義的目標規範,特別是符合這種預定義的目標規範允許的公差,在部件承載件結構102上形成金屬圖案。這種預定義的目標規範可以定義基於已處理的部件承載件結構102製造的部件承載件(例如印刷電路板)的内容。例如,這種目標規範可以限定待由電鍍覆設備100形成的部件承載件結構102的水準和/或豎向的金屬佈線結構以及/或者水準和/或豎向的金屬互連結構。例如,目標規範還可以訓示所提到的金屬結構的期望金屬厚度或金屬厚度範圍。控制單元108可以從資料庫160訪問這樣的目標規範,例如以數据集或設計檔案的形式的目標規範。資料庫160可以例如被體現為諸如硬碟等的大容量存儲器件。鍍覆過程的調整可以由控制單元108完成,特別是在控制分離式陽極部分106方面,以實現符合預定義的目標規範。例如,當確定(通過目視檢查和/或通過執行基於機器的測量,如上所提到的)部件承載件結構102上的當前鍍覆的金屬結構在整個部件承載件結構102上或在一個或更多個單獨的部段120處不符合規範,分離式陽極部分106的空間上相關的電流密度分佈可以被重新調整以符合規範。這可以包括以空間定義的方式進行空間上相關的金屬增厚(例如通過增大電流密度)或金屬減薄(例如通過臨時施加反向電流以觸發電金屬去除)。 作為對由資料庫160提供控制數據的補充或替代,控制單元108(其可以是例如處理器、多個處理器或處理器的一部分)可以從輸入/輸出單元162接收數據和/或指令。通過輸入/輸出單元162,用戶可以將數據和/或指令輸入至電鍍覆設備100。輸入/輸出單元162還可以將操作參數的結果呈現給用戶,例如在顯示器上呈現。 圖2圖示了根據本發明的另一示例性實施方式的用於對兩個部件承載件結構102進行電鍍覆的電鍍覆設備100。 根據圖2的電鍍覆設備100包括多個電鍍覆槽110,在電鍍覆期間部件承載件結構102被順序地傳送通過這些電鍍覆槽。如圖所示,每個電鍍覆槽110包括陽極104,該陽極104分成多個單獨的陽極部分106。每個陽極104的分離可以沿著傳送方向112和/或垂直於傳送方向112完成,即,可以沿水準方向和/或豎向方向被分離。沿著電鍍覆槽110一個接一個地傳送部件承載件結構102。為了傳送部件承載件結構102,提供傳送機構118,該傳送機構118用於沿著陽極104的連續佈置的陽極部分106支撐和傳送部件承載件結構102。如圖所示,傳送機構118沿著陽極104的陽極部分106,更具體地,沿著與陽極部分106的取向平行的方向,在水準取向上傳送部件承載件結構102。部件承載件結構102可以在裝載器部分166處被供應至電鍍覆槽110。在連續的電鍍覆槽110中電鍍覆之後,可以在卸載器部分167處從電鍍覆設備100去除部件承載件結構102。 當被供應至兩個連續佈置的電鍍覆槽110時,部件承載件結構102可能具有缺陷區域164,在該缺陷區域164中局部銅厚度太大或太小(例如由於先前對部件承載件結構102的增材和/或減材處理有缺陷)。相應部件承載件結構102的缺陷區域164中的這種不適當的銅厚度可以通過選擇陽極部分106的電流密度分佈以使得缺陷區域164可以被選擇性地過度鍍覆或鍍覆不足來進行補償。可以這樣做,使得在經過電鍍覆槽110之後,可以獲得無缺陷的經鍍覆的部件承載件結構102。在所示的實施方式中,特別是最上面的陽極部分106可以經受修改的電流密度,因為這些最上面的陽極部分106將對缺陷區域164的鍍覆特性產生明顯影響。 每個銅鍍覆槽110可以具有其各自的V或∧形結構的陽極104。各個陽極部分106的電流密度調整允許對部件承載件結構102上的銅厚度分佈進行微調。 圖3圖示了根據本發明的示例性實施方式的電鍍覆設備100的分離式陽極104的不同視圖。 利用圖示的配置,可以顯著地改善或均勻化電鍍覆的部件承載件結構102的銅厚度分佈。在所示的實施方式中,示出了包括網狀物的陽極結構。 非常有利地,由於水準鍍覆線的圖示結構,分配至各個陽極部分106的電流密度可以被動態連續調整。在所示的實施方式中,相應陽極104被分成四個陽極部分106。V或∧形結構可以允許有效的動態調整。 圖4圖示了根據本發明的示例性實施方式的電鍍覆設備100的分離式陽極104的設計。 根據圖4,陽極部分106是V或∧形的並且具有鋸齒形邊緣168。然而,圖示的被分成陽極部分106的陽極104具有整體矩形形狀或輪廓,如外部邊緣170所示。 當由各自的電流密度適當地供電時,所示的連續佈置的分離式陽極104的陽極部分106的圖示V或∧形設計有效地促進均勻的金屬沉積。因此所示的V或∧形形狀可以可靠地防止面板型部件承載件結構102的表面之上的明顯的銅厚度變化。 鋸齒形邊緣168由向內漸縮的邊緣部分174和向外漸縮的邊緣部分176的交替排序形成。例如,向內漸縮的邊緣部分174或向外漸縮的邊緣部分176相對於在傳送方向112上延伸的線性邊緣179的向內或向外漸縮角β可以小於20°。 通過圖形類比,可以回到銅槽的真實結構,示出陽極有效面積的類比。電流密度調整因數可以通過電流值除以陽極部分106的面積來計算。 圖5A、圖5B和圖5C以及圖6A、圖6B和圖6C圖示了根據本發明的示例性實施方式的關於由電鍍覆設備100形成的部件承載件結構102的鍍覆層的厚度分佈的信息。 圖示的部件承載件結構102的各個部段120可以顯示不同的銅厚度值,特別是具有太大銅厚度的區域182和具有太小銅厚度的區域184。圖5A-圖5C和圖6A-圖6C圖示了部件承載件結構102的頂側188和底側186上的特性。關於成列的部段120的數據用附圖標記190繪製,並且關於成行的部段120的數據用附圖標記192繪製(對於頂側188,參見附圖標記194,而對於底側186,參見附圖標記196)。摘要信息被繪製在部分198中。 相比於圖5A-圖5C,圖6A-圖6C示出了在減少特別是頂側上的銅厚度的系統偏差方面的改善。這種改善可以通過適當地重新調整分離式陽極104的陽極部分106上的電流密度來實現。 在優化鍍覆過程之後,部件承載件結構102的前側示出了與銅厚度分佈有關的積極結果。優化可以包括基於裝備特性對施加到分離式陽極104的電流密度進行動態連續調整。具體地,可以將陽極104劃分成多個(例如四個)陽極部分106,優選地這些陽極部分106具有V或∧形結構。這可以有效地影響與銅厚度均一性有關的子面板區段。可以有效地抑制鍍覆之後的部件承載件結構102的缺陷。 圖7和圖8圖示了根據本發明的其他示例性實施方式的電鍍覆設備100的分離式陽極104。 如在圖2中一樣,圖7和圖8中圖示的陽極104被分成多個單獨的陽極部分106,但是分的方式與圖2中的不同。在圖7和圖8中,相鄰的陽極部分106之間的所有接合部從左至右向下傾斜。如各個圖中所示,單獨的陽極部分106的許多不同幾何形狀是可能的。 應該注意的是,術語“包括”不排除其他元件或步驟,並且“一”或“一個”不排除多個。還可以將結合不同實施方式描述的元件進行組合。 還應該注意的是,申請專利範圍中的附圖標記不應被解釋為限制申請專利範圍的範圍。 本發明的實現方式不限於圖中所示和上面描述的優選實施方式。相反,即使在根本不同的實施方式的情况下,使用所示解決方案和根據本發明的原理的多種變型也是可行的。 The illustrations in the drawings are schematic. In different figures, similar or identical elements are provided with the same element numbers. Before describing the exemplary embodiments in more detail with reference to the drawings, some basic concepts will be summarized, on the basis of which the exemplary embodiments of the invention are developed. Traditionally, the uniformity of the copper thickness of plated component carrier structures (such as PCB panels) may be insufficient. This may lead to defects and therefore to low yield. In particular for high-density applications (e.g. applications with 35µm/35µm trace widths and a required copper thickness of, for example, 26µm), the yield is very limited. During a conventional plating process, only the entire panel can be influenced in terms of plating control. According to an exemplary embodiment of the invention, an electroplating process for depositing metal (preferably copper) on selected electrically conductive surface portions of a component carrier structure (such as a panel for forming a printed circuit board) is performed using an anode (i.e., a plating electrode to which a voltage or current with a positive sign is applied at least temporarily), which is spatially and electrically divided into a plurality of separate (especially electrically decoupled) anode parts. Different anode parts can be controlled individually in order to provide different current density values for different designated sections of the component carrier structure to be electroplated. By taking this measure, the component carrier structure can be subjected to a spatially correlated current density distribution. Subjecting different portions of a component carrier structure in a plating bath to regions of different currents can result in a spatially varying efficiency distribution of electroplated metal deposition. Thus, in situations where artifacts (e.g., of the plating process) may result in unintentional spatial variations in the thickness distribution of the plated metal on the component carrier structure, a corresponding reverse current density distribution can at least partially compensate for the thickness differences on different regions of the component carrier structure. Thus, a split anode configuration with individually selectable current density values in different spatial regions of the anode can result in a well-defined or more uniform thickness distribution of the metal on the component carrier structure. Specifically, the copper thickness distribution on the core layer of the component carrier structure can be made more uniform. More specifically, a coating structure can be provided that performs current density adjustment of separated anode parts to improve copper thickness uniformity. Advantageously, such a coating structure can be particularly applied to horizontally coated lines to improve copper thickness uniformity. Advantageously, during coating, the anode current distribution can be divided to obtain a uniform copper deposition. In particular, the current distribution can be readjusted to improve the previously insufficient copper thickness uniformity. According to an exemplary embodiment of the present invention, the coated anode can be divided into different anode parts to control the secondary field to improve the copper thickness uniformity by redistributing the current density. By properly controlling such divided anodes in horizontally plated wires, a refinement of the copper thickness output can be obtained. Specifically, for the manufacture of component carriers with high density integration (HDI) metal structures in horizontally plated wires, the use of anode parts that can be individually controlled in terms of current supply to form spatially related current density distributions has proven to be efficient. Advantageously, exemplary embodiments of the present invention can achieve partial current output of individual separated anode parts to adjust copper thickness. Specifically, this can allow addressing specific sections or critical sections of the component carrier structure where the copper thickness may need to be readjusted. According to an exemplary embodiment of the present invention, partial sections of a component carrier structure (such as a panel) can be controlled by adjusting the current density of each separate anode portion. This can allow the copper thickness of specific sections to be adjusted individually. This can allow matching even demanding fine line trace width requirements. Descriptively speaking, exemplary embodiments of the present invention can divide the component carrier structure into different sections, where a separate anode method with spatially related current density distribution can allow the copper thickness output of partial sections of the component carrier structure to be influenced individually. From the perspective of a copper etching process or a copper addition process, the copper thickness can be reduced or increased, and the copper thickness can be characterized by its uniformity due to the structure of the equipment. For example, the subtractive process may have three copper thickness reduction processes and three copper thickness increase processes. In addition, a pattern may be generated by etching the final copper thickness. The copper thickness reduction process may result in copper thickness deviations. Other deviations may come from the copper thickness increase process. According to an exemplary embodiment of the present invention, current density adjustment of different anode portions of a horizontally plated wire for copper deposition may be performed to improve the overall thickness uniformity over a processed component carrier structure (such as a panel). During the plating process, the copper thickness distribution over the panel may often lack sufficient uniformity, for example due to the effects of previous processes (for example, surface copper may be etched away for cleaning and roughening purposes, but the copper thickness distribution is thereby deteriorated). By dividing the anode into multiple individually controllable anode parts that can be applied with different current values to produce a spatial current density distribution, the divided current can allow the construction of a copper layer with a spatially balanced copper thickness. By using a split anode method to produce a spatially correlated current density distribution over an extension of a component carrier structure immersed in a plating bath, defects in easily manufactured component carriers can be reduced and yield can be improved. In short, the anode current distribution can be spatially divided to balance the variations in the deposited copper. By taking this measure, the plating process can be enhanced to improve the copper thickness distribution, particularly for HDI processes. Figure 1 illustrates a plating device 100 for electroplating a component carrier structure 102 according to an exemplary embodiment of the present invention. The illustrated plating device 100 can be configured to electroplating copper on the electrically conductive surface of the component carrier structure 102. For example, the latter can be a plate-like panel (e.g., having dimensions of 21.25 x 24.3 square inches) for manufacturing a printed circuit board (PCB) type component carrier. The electroplating apparatus 100 shown is embodied as a horizontally coated line, and is particularly suitable for the split anodic method described below. However, the exemplary embodiment can also be implemented in a vertically coated line. The electroplating apparatus 100 shown includes a coating tank 110, which is filled with an aqueous coating solution 152 including a copper source such as a dissolved copper salt. The aqueous coating solution 152 is an electrolyte. The component carrier structure 102 to be copper-coated can be mounted (for example, alone or together with one or more other component carrier structures, not shown) on a support structure (not shown) such as an electrical clamp. When mounted on such a support structure, the component carrier structure 102 can be conveyed in a horizontal direction along the electroplating device 100. In addition, the electroplating device 100 can include a current source 116 for providing a current during the copper plating process. In the embodiment shown, the current provided by the current source 116 can be a direct current (DC). In another embodiment, a pulsed current can also be provided. The negative electrode of the current source 116 can be electrically connected to an electrically conductive structure (e.g., a seed layer) of the component carrier structure 102 directly or through an electrically conductive support structure. By taking this measure, the component carrier structure 102 can act as a cathode 114 during the plating process. The positive electrode of current source 116 can be electrically connected to the anode 104 that is also immersed in the plating solution 152. As shown in the figure, the anode 104 is divided into a plurality of separate anode parts 106. Different anode parts 106 can have different local sections or can have the same local sections. Each separate anode part 106 is configured to provide a separate current density to a specified (e.g., directly facing) section 120 in the space of the component carrier structure 102. More specifically, different current densities can be applied to different anode parts 106. This can be achieved by providing a separate selectable current density from current source 116 for each separate anode part 106 through control unit 108. By applying individually adjustable current density values to each respective one of the anodic portions 106 , a spatially relevant current density distribution may be produced over the extended portion of the component carrier structure 102 during the electroplating process. By way of example only, the current density applied to the anode portion 106' (e.g., located on the left side of Figure 1) may be different from another current density applied to the anode portion 106" (e.g., located on the right side of Figure 1). In contrast, the current provided to the cathode 114 may be the same for all sections 120 of the component carrier structure 102. For example, a potential difference may be applied between the anode 104 and the cathode 114. The resulting current may be the result of a balanced reaction of the potentials applied in different manners. When a common potential or voltage is applied at the cathode 114, different current densities may be generated by the different voltages applied at the anode portions 106' and 106". The potential difference between the cathode 114 and the anode portion 106' causes a first current density, while the potential difference between the cathode 114 and the anode portion 106" causes another second current density. As a result, the current flow in the electrolyte 152 in the region 154 between the anode portion 106' and the designated section 120' of the component carrier structure 102 can be different from the current flow in the electrolyte 152 in the region 156 between the anode portion 106" and the designated section 120" of the component carrier structure 102. Therefore, the efficiency of copper electrodeposition on the section 120' can be adjusted to be different from the efficiency of copper electrodeposition on the section 120". The uniformity of the copper thickness in the regions 120' and 120" can be improved by appropriately adjusting the current density in the anode portions 106' and 106" to partially or completely compensate for the artifacts in the case where, due to the undesirable artifacts, the intrinsic efficiency of the electro-deposition of copper in the segments 120' and 120" is different (e.g., due to the different integration densities in the segments 120', 120"), which may result in undesirably different copper thicknesses in the segments 120', 120". For this purpose, the control unit 108 can be configured to individually control the current density applied to each anode portion 106 to enhance the uniformity of the deposited metal thickness over the entire extension of the component carrier structure 102. Thus, the control unit 108 can be configured to individually control the current density applied to each anode portion 106 to enhance the uniformity of the deposited metal thickness over the entire extension of the component carrier structure 102. 108 can be configured to control the current density applied to each anode portion 106, thereby forming a metal pattern having a substantially uniform thickness on the component carrier structure 102. Specifically, the separated anode portions 106 of the anode 104 can be controlled to have a substantially uniform thickness on the component carrier structure 102, compared to the spatially independent current density over the extended portion of the component carrier structure 102. More specifically, the control unit 108 can be configured to control the anode 104 to adjust the spatially related current density distribution so that different sections 120 of the component carrier structure 102 can be electroplated with different coating parameters, in particular different coating efficiencies or metal deposition rates. Advantageously, the control unit 108 can be configured to control the anode 104 to adjust the spatially related current density distribution so that different sections 120 of the component carrier structure 102 can be electroplated with different coating parameters, in particular different coating efficiencies or metal deposition rates. 08 can also be configured to dynamically control the change in the current density applied to each anode portion 106 over time. Therefore, the spatial current density distribution over the anode 104 can be changed over time. For example, when a significant copper thickness non-uniformity is determined over an extended portion of the component carrier structure 102, the current distribution can be modified to at least partially balance the non-uniformity. For example, the determination may be performed by visual inspection by an operator and/or by machine-based measurements (e.g., by an optical camera and/or by measuring the conductivity of the deposited metal in the different regions 120). By adjusting or varying the current density distribution not only spatially but also over time, the control of the coating process may be further refined. When dynamically controlling the individual anode portions 106 When a current density value of is obtained, the control unit 108 can be configured to determine information indicative of the metal distribution on the component carrier structure 102 to be electroplated. The control unit 108 can then be configured to adjust or readjust the spatially related current density distribution on the extension of the component carrier structure 102 to reduce the thickness variation of the metal distribution on the entire component carrier structure 102. The determination of the information can be accomplished by an operator as described above and/or by machine-based measurements as described above. If the result of the determination is defective, the control unit 108 can take countermeasures to reduce or even eliminate the defect. The countermeasures can include corresponding adjustments to the current density distribution between the anode 104 and the component carrier structure 102. The adjustment can be performed by correspondingly adjusting or re-adjusting the current supply to the respective anodic portion 106. In an embodiment, the control unit 108 can be configured to control the anodic portion 106 and additionally control at least one subtractive process (such as an etching or grinding process) for removing metal from the component carrier structure 102 to control the metal distribution (especially the metal thickness) on the component carrier structure 102. Additionally or alternatively, the control unit 108 can be configured to control the anodic portion 106 and at least one additive process (such as sputtering) for applying metal to the component carrier structure 102. The mentioned subtractive processes and/or additive processes can be performed before and/or after the illustrated electroplating process. By also considering the adjustment of the additive metal supply process and/or the subtractive metal removal process in combination with the electroplating process, it is possible to further enhance the uniformity of the distribution of the metal on the component carrier structure 102. In a preferred embodiment, the control unit 108 is configured to control the current density applied to each anode portion 106, so that a metal pattern is formed on the component carrier structure 102 according to a predefined target specification, in particular in accordance with the tolerance allowed by such a predefined target specification. Such a predefined target specification can define the content of a component carrier (e.g., a printed circuit board) manufactured based on the processed component carrier structure 102. For example, such a target specification can define the horizontal and/or vertical metal wiring structure and/or the horizontal and/or vertical metal interconnection structure of the component carrier structure 102 to be formed by the electroplating device 100. For example, the target specification can also indicate the expected metal thickness or metal thickness range of the mentioned metal structure. The control unit 108 can access such a target specification from a database 160, for example, a target specification in the form of a data set or a design file. The database 160 can, for example, be embodied as a large-capacity storage device such as a hard disk. Adjustment of the plating process can be completed by the control unit 108, in particular in controlling the separated anode part 106, to achieve compliance with the predefined target specification. For example, when it is determined (by visual inspection and/or by performing machine-based measurements, as mentioned above) that the currently coated metal structure on the component carrier structure 102 does not meet specifications across the entire component carrier structure 102 or at one or more individual sections 120, the spatially related current density distribution of the separated anode portion 106 can be readjusted to meet specifications. This can include spatially related metal thickening (e.g., by increasing the current density) or metal thinning (e.g., by temporarily applying a reverse current to trigger electrical metal removal) in a spatially defined manner. In addition to or instead of providing control data by the database 160, the control unit 108 (which may be, for example, a processor, a plurality of processors, or a portion of a processor) may receive data and/or instructions from an input/output unit 162. Through the input/output unit 162, a user may input data and/or instructions to the electroplating apparatus 100. The input/output unit 162 may also present the results of the operating parameters to the user, for example on a display. FIG. 2 illustrates an electroplating apparatus 100 for electroplating two component carrier structures 102 according to another exemplary embodiment of the present invention. The electroplating device 100 according to FIG. 2 comprises a plurality of electroplating tanks 110 through which component carrier structures 102 are sequentially conveyed during electroplating. As shown, each electroplating tank 110 comprises an anode 104, which is divided into a plurality of individual anode parts 106. The separation of each anode 104 can be performed along the conveying direction 112 and/or perpendicular to the conveying direction 112, i.e., can be separated in the horizontal direction and/or in the vertical direction. The component carrier structures 102 are conveyed one by one along the electroplating tanks 110. In order to convey the component carrier structure 102, a conveying mechanism 118 is provided, which is used to support and convey the component carrier structure 102 along the continuously arranged anode portion 106 of the anode 104. As shown in the figure, the conveying mechanism 118 conveys the component carrier structure 102 in a horizontal orientation along the anode portion 106 of the anode 104, more specifically, along a direction parallel to the orientation of the anode portion 106. The component carrier structure 102 can be supplied to the electroplating tank 110 at the loader section 166. After electroplating in the continuous electroplating tank 110, the component carrier structure 102 can be removed from the electroplating apparatus 100 at the unloader section 167. When being supplied to two consecutively arranged electroplating cells 110, the component carrier structure 102 may have defective regions 164 in which the local copper thickness is too large or too small (e.g. due to defects in the previous additive and/or subtractive processing of the component carrier structure 102). Such inappropriate copper thickness in the defective regions 164 of the respective component carrier structure 102 may be compensated by selecting the current density distribution of the anode portion 106 so that the defective regions 164 may be selectively over-coated or under-coated. This may be done so that after passing through the electroplating cells 110, a defect-free coated component carrier structure 102 may be obtained. In the embodiment shown, in particular the uppermost anode portions 106 can be subjected to modified current densities, since these uppermost anode portions 106 will have a significant impact on the plating characteristics of the defective regions 164. Each copper plating groove 110 can have its own anode 104 of V or Λ-shaped structure. Adjustment of the current density of the individual anode portions 106 allows fine-tuning of the copper thickness distribution on the component carrier structure 102. Figure 3 illustrates different views of the separated anodes 104 of the electroplating apparatus 100 according to an exemplary embodiment of the present invention. With the illustrated configuration, the copper thickness distribution of the electroplated component carrier structure 102 can be significantly improved or uniformed. In the embodiment shown, an anode structure including a mesh is shown. Very advantageously, due to the illustrated structure of the horizontal plating line, the current density distributed to each anode part 106 can be dynamically and continuously adjusted. In the embodiment shown, the corresponding anode 104 is divided into four anode parts 106. The V or ∧-shaped structure can allow effective dynamic adjustment. Figure 4 illustrates the design of a separated anode 104 of an electroplating device 100 according to an exemplary embodiment of the present invention. According to Figure 4, the anode part 106 is V or ∧-shaped and has a sawtooth edge 168. However, the illustrated anode 104 divided into anode portions 106 has an overall rectangular shape or outline, as shown by the outer edge 170. The illustrated V or ∧-shaped design of the anode portions 106 of the continuously arranged separated anodes 104 effectively promotes uniform metal deposition when properly powered by the respective current densities. The illustrated V or ∧-shaped shape can therefore reliably prevent significant copper thickness variations over the surface of the panel-type component carrier structure 102. The saw-shaped edge 168 is formed by an alternating arrangement of inwardly tapering edge portions 174 and outwardly tapering edge portions 176. For example, the inward or outward tapering angle β of the inwardly tapering edge portion 174 or the outwardly tapering edge portion 176 relative to the linear edge 179 extending in the conveying direction 112 can be less than 20°. By graphical analogy, we can return to the real structure of the copper trough and show the analogy of the effective area of the anode. The current density adjustment factor can be calculated by dividing the current value by the area of the anode portion 106. Figures 5A, 5B and 5C and Figures 6A, 6B and 6C illustrate information about the thickness distribution of the coating layer of the component carrier structure 102 formed by the electroplating device 100 according to an exemplary embodiment of the present invention. The various sections 120 of the illustrated component carrier structure 102 may display different copper thickness values, particularly areas 182 having too much copper thickness and areas 184 having too little copper thickness. FIGS. 5A-5C and 6A-6C illustrate properties on the top side 188 and bottom side 186 of the component carrier structure 102. Data for the sections 120 in columns are plotted with reference numerals 190, and data for the sections 120 in rows are plotted with reference numerals 192 (for the top side 188, see reference numerals 194, and for the bottom side 186, see reference numerals 196). Summary information is plotted in section 198. Compared to Figures 5A-5C, Figures 6A-6C show improvements in reducing the systematic deviation of the copper thickness, especially on the top side. This improvement can be achieved by appropriately re-adjusting the current density on the anode portion 106 of the separated anode 104. After optimizing the coating process, the front side of the component carrier structure 102 shows positive results related to the copper thickness distribution. The optimization can include dynamic and continuous adjustment of the current density applied to the separated anode 104 based on the equipment characteristics. Specifically, the anode 104 can be divided into multiple (for example, four) anode portions 106, preferably these anode portions 106 have a V or ∧-shaped structure. This can effectively affect the sub-panel section related to the uniformity of copper thickness. The defects of the component carrier structure 102 after plating can be effectively suppressed. Figures 7 and 8 illustrate a separated anode 104 of an electroplating device 100 according to other exemplary embodiments of the present invention. As in Figure 2, the anode 104 illustrated in Figures 7 and 8 is divided into a plurality of separate anode parts 106, but the division method is different from that in Figure 2. In Figures 7 and 8, all joints between adjacent anode parts 106 are inclined downward from left to right. As shown in the various figures, many different geometric shapes of separate anode parts 106 are possible. It should be noted that the term "comprising" does not exclude other elements or steps, and "a" or "an" does not exclude a plurality. It is also possible to combine elements described in conjunction with different embodiments. It should also be noted that the reference numerals in the claims should not be interpreted as limiting the scope of the claims. The implementation of the invention is not limited to the preferred embodiments shown in the figures and described above. On the contrary, even in the case of fundamentally different embodiments, multiple variations using the solutions shown and according to the principles of the invention are possible.

100:電鍍覆設備 102:部件承載件結構 104:陽極 106,106’,106”:陽極部分 108:控制單元 110:鍍覆槽,電鍍覆槽 112:傳送方向 114:陰極 116:電流源 118:傳送機構 120,120’,120”:指定部段 152:含水鍍覆溶液,電解質 154:位於陽極部分106’與部件承載件結構102的指定部段120’之間的區域 156:位於陽極部分106”與部件承載件結構102的指定部段120”之間的區域 160:數據庫 162:輸入/輸出單元 164:缺陷區域 167:卸載器部分 168:鋸齒形邊緣 170:外部邊緣 174:向內漸縮的邊緣部分 176:向外漸縮的邊緣部分 179:線性邊緣 182:具有太大銅厚度的區域 184:具有太小銅厚度的區域 186:部件承載件結構的底側 188:部件承載件結構的頂側 190:成列的部段120的數據 192:成行的部段120的數據 194:頂側188的數據 196:底側186的數據 198:摘要信息 100: electroplating equipment 102: component carrier structure 104: anode 106, 106', 106": anode part 108: control unit 110: plating tank, electroplating tank 112: transmission direction 114: cathode 116: current source 118: transmission mechanism 120, 120', 120": designated section 152: aqueous plating solution, electrolyte 154: area between the anode part 106' and the designated section 120' of the component carrier structure 102 156: area between the anode part 106" and the designated section 120" of the component carrier structure 102 160: Database 162: Input/output unit 164: Defect area 167: Unloader section 168: Sawtooth edge 170: External edge 174: Inwardly tapering edge section 176: Outwardly tapering edge section 179: Linear edge 182: Area with too much copper thickness 184: Area with too little copper thickness 186: Bottom side of component carrier structure 188: Top side of component carrier structure 190: Data of section 120 in columns 192: Data of section 120 in rows 194: Data of top side 188 196: Data of bottom side 186 198: Summary information

[圖1]繪示根據本發明的示例性實施方式的用於對部件承載件結構進行電鍍覆的電鍍覆設備。 [圖2]繪示根據本發明的另一示例性實施方式的用於對部件承載件結構進行電鍍覆的電鍍覆設備。 [圖3]繪示根據本發明的示例性實施方式的電鍍覆設備的分離式陽極的不同視圖。 [圖4]繪示根據本發明的示例性實施方式的電鍍覆設備的分離式陽極的設計。 [圖5A]至[圖5C]和[圖6A]至[圖6C]繪示了根據本發明的示例性實施方式的關於由電鍍覆設備形成的部件承載件結構的鍍覆層的厚度分佈的信息。 [圖7]和[圖8]繪示了根據本發明的其他示例性實施方式的電鍍覆設備的分離式陽極。 [FIG. 1] shows an electroplating apparatus for electroplating a component carrier structure according to an exemplary embodiment of the present invention. [FIG. 2] shows an electroplating apparatus for electroplating a component carrier structure according to another exemplary embodiment of the present invention. [FIG. 3] shows different views of a separate anode of an electroplating apparatus according to an exemplary embodiment of the present invention. [FIG. 4] shows a design of a separate anode of an electroplating apparatus according to an exemplary embodiment of the present invention. [FIG. 5A] to [FIG. 5C] and [FIG. 6A] to [FIG. 6C] show information on the thickness distribution of a coating layer of a component carrier structure formed by an electroplating apparatus according to an exemplary embodiment of the present invention. [Figure 7] and [Figure 8] illustrate separate anodes of electroplating equipment according to other exemplary embodiments of the present invention.

100:電鍍覆設備 100:Electroplating equipment

102:部件承載件結構 102: Component carrier structure

104:陽極 104: Yang pole

106,106’,106”:陽極部分 106,106’,106”: Anode part

108:控制單元 108: Control unit

110:鍍覆槽,電鍍覆槽 110: Plating tank, electroplating tank

112:傳送方向 112: Transmission direction

114:陰極 114: cathode

116:電流源 116: Current source

120,120’,120”:指定部段 120,120’,120”: designated section

152:含水鍍覆溶液,電解質 152: Aqueous coating solution, electrolyte

154:位於陽極部分106’與部件承載件結構102的指定部段 120’之間的區域 154: The area between the anode portion 106' and the designated section 120' of the component carrier structure 102

156:位於陽極部分106”與部件承載件結構102的指定部段 120”之間的區域 156: The area between the anode portion 106" and the designated section 120" of the component carrier structure 102

160:數據庫 160:Database

162:輸入/輸出單元 162: Input/output unit

Claims (27)

一種用於對部件承載件結構(102)進行電鍍覆的電鍍覆設備(100),其中,所述電鍍覆設備(100)包括: 陽極(104),所述陽極(104)被分成多個單獨的陽極部分(106),每個陽極部分(106)被配置用於:向所述部件承載件結構(102)的指定部段(120)提供單獨的電流密度,以用於在待被電鍍覆的所述部件承載件結構(102)的延伸部之上提供空間上相關的電流密度分佈;以及 多個電鍍覆槽(110),在電鍍覆期間所述部件承載件結構(102)將被順序地傳送通過所述多個電鍍覆槽(110),其中所述電鍍覆槽(110)中的各者包括所述陽極(104),所述陽極(104)被分成多個單獨的陽極部分(106),各個陽極部分(106)的電流密度調整允許對所述部件承載件結構(102)上的金屬厚度分佈進行微調。 An electroplating apparatus (100) for electroplating a component carrier structure (102), wherein the electroplating apparatus (100) comprises: an anode (104), the anode (104) being divided into a plurality of separate anode portions (106), each anode portion (106) being configured to: provide a separate current density to a specified section (120) of the component carrier structure (102) for providing a spatially related current density distribution over an extension of the component carrier structure (102) to be electroplated; and A plurality of electroplating tanks (110) through which the component carrier structure (102) is sequentially conveyed during electroplating, wherein each of the electroplating tanks (110) includes the anode (104), the anode (104) being divided into a plurality of separate anode portions (106), and adjustment of the current density of each anode portion (106) allows fine tuning of the metal thickness distribution on the component carrier structure (102). 如請求項1之電鍍覆設備(100),其中所述電鍍覆設備(100)包括控制單元(108),所述控制單元(108)被配置用於對施加至所述陽極部分(106)中的每個陽極部分(106)的所述電流密度進行單獨地控制。The electroplating device (100) of claim 1, wherein the electroplating device (100) includes a control unit (108), and the control unit (108) is configured to individually control the current density applied to each anode part (106) in the anode part (106). 如請求項2之電鍍覆設備(100), 其中,所述電鍍覆設備(100)包括以下特徵中的至少一者: 其中,所述控制單元(108)被配置用於:控制所述陽極(104),以調整所述空間上相關的電流密度分佈,使得所述部件承載件結構(102)的所述指定部段(120)分別能夠以不同的鍍覆參數被電鍍覆; 其中,所述控制單元(108)被配置用於:控制所述陽極(104),以基於鍍覆浴中的溫度和/或pH值來調整所述空間上相關的電流密度分佈。 The electroplating device (100) of claim 2, wherein the electroplating device (100) comprises at least one of the following features: wherein the control unit (108) is configured to: control the anode (104) to adjust the spatially related current density distribution so that the designated sections (120) of the component carrier structure (102) can be electroplated with different plating parameters respectively; wherein the control unit (108) is configured to: control the anode (104) to adjust the spatially related current density distribution based on the temperature and/or pH value in the plating bath. 如請求項3之電鍍覆設備(100),其中,所述控制單元(108)被配置用於控制所述陽極(104)以基於由至少一個溫度感測器和/或pH值感測器感測的溫度和/或pH值來調整所述空間上相關的電流密度分佈。The electroplating apparatus (100) of claim 3, wherein the control unit (108) is configured to control the anode (104) to adjust the spatially related current density distribution based on the temperature and/or pH value sensed by at least one temperature sensor and/or pH sensor. 如請求項2至4中任一項之電鍍覆設備(100),其中,所述控制單元(108)被配置用於對施加至所述陽極部分(106)中的每個陽極部分(106)的所述電流密度進行動態地控制。The electroplating device (100) of any one of claims 2 to 4, wherein the control unit (108) is configured to dynamically control the current density applied to each of the anode parts (106). 如請求項2之電鍍覆設備(100),其中,所述控制單元(108)被配置用於:控制所述陽極部分(106);並附加地控制至少一個減材過程以用於從所述部件承載件結構(102)去除金屬和/或附加地控制至少一個增材過程以用於將金屬施加至所述部件承載件結構(102),從而提供預定義的金屬分佈。The electroplating device (100) of claim 2, wherein the control unit (108) is configured to: control the anode portion (106); and additionally control at least one subtractive process for removing metal from the component carrier structure (102) and/or additionally control at least one additive process for applying metal to the component carrier structure (102), thereby providing a predetermined metal distribution. 如請求項6之電鍍覆設備(100),其中,所述控制單元(108)被配置以附加地控制至少一個增材過程以用於將金屬施加至所述部件承載件結構(102),從而提供作為在所述部件承載件結構(102)上的均勻的金屬分佈之所述預定義的金屬分佈。The electroplating apparatus (100) of claim 6, wherein the control unit (108) is configured to additionally control at least one additive process for applying metal to the component carrier structure (102), thereby providing the predetermined metal distribution as a uniform metal distribution on the component carrier structure (102). 如請求項2之電鍍覆設備(100),其中,所述控制單元(108)被配置用於:對施加至所述陽極部分(106)中的每個陽極部分(106)的所述電流密度進行控制,從而根據預定義的目標規範在所述部件承載件結構(102)上形成金屬圖案。The electroplating device (100) of claim 2, wherein the control unit (108) is configured to: control the current density applied to each anode part (106) in the anode part (106), thereby forming a metal pattern on the component carrier structure (102) according to a predetermined target specification. 如請求項2之電鍍覆設備(100),其中,所述電鍍覆設備(100)包括以下特徵中的至少一者: 其中,所述控制單元(108)被配置用於:對施加至所述陽極部分(106)中的每個陽極部分(106)的所述電流密度進行控制,從而在所述部件承載件結構(102)上形成具有均勻厚度的金屬圖案; 其中,所述控制單元(108)被配置用於:對施加至所述陽極部分(106)中的每個陽極部分(106)的所述電流密度進行控制,從而形成在豎向方向上具有不同高度的金屬結構。 The electroplating device (100) of claim 2, wherein the electroplating device (100) includes at least one of the following features: wherein the control unit (108) is configured to: control the current density applied to each of the anode parts (106) so as to form a metal pattern with uniform thickness on the component carrier structure (102); wherein the control unit (108) is configured to: control the current density applied to each of the anode parts (106) so as to form a metal structure with different heights in the vertical direction. 如請求項9之電鍍覆設備(100),其中,所述控制單元(108)被配置用於:對施加至所述陽極部分(106)中的每個陽極部分(106)的所述電流密度進行控制,從而根據預定義的高度分佈來形成在所述豎向方向上具有不同高度的金屬結構。The electroplating device (100) of claim 9, wherein the control unit (108) is configured to: control the current density applied to each anode part (106) in the anode part (106), thereby forming a metal structure with different heights in the vertical direction according to a predetermined height distribution. 如請求項2之電鍍覆設備(100),其中,所述控制單元(108)被配置用於將不同的電勢施加至不同的陽極部分(106)。The electroplating device (100) of claim 2, wherein the control unit (108) is configured to apply different potentials to different anode parts (106). 如請求項1之電鍍覆設備(100),其中,不同的陽極部分(106)具有不同的局部區段。An electroplating device (100) as claimed in claim 1, wherein different anode parts (106) have different local sections. 如請求項1之電鍍覆設備(100),其中,所述陽極部分(106)中的至少一些陽極部分(106)是V或∧形形狀的。The electroplating device (100) of claim 1, wherein at least some of the anode portions (106) are V-shaped or Λ-shaped. 如請求項1之電鍍覆設備(100),其中,所述陽極部分(106)中的至少一些陽極部分(106)具有至少一個鋸齒形邊緣(168)。The electroplating device (100) of claim 1, wherein at least some of the anode portions (106) have at least one saw-shaped edge (168). 如請求項1之電鍍覆設備(100),其中,被分成所述陽極部分(106)的所述陽極(104)具有整體矩形形狀。The electroplating device (100) of claim 1, wherein the anode (104) divided into the anode part (106) has an overall rectangular shape. 如請求項1之電鍍覆設備(100),其中所述陽極(104)在傳送方向(112)上和/或橫向於傳送方向(112)被分成所述多個單獨的陽極部分(106),在電鍍覆期間所述部件承載件結構(102)將沿所述傳送方向(112)被傳送。A plating apparatus (100) as claimed in claim 1, wherein the anode (104) is divided into the plurality of separate anode parts (106) in a transport direction (112) and/or transversely to the transport direction (112), and the component carrier structure (102) will be transported along the transport direction (112) during the plating. 如請求項1之電鍍覆設備(100),其中,所述電鍍覆設備(100)包括: 陰極(114),所述陰極(114)將與待被電鍍覆的所述部件承載件結構(102)電耦合;以及 至少一個電流源(116),所述至少一個電流源(116)被配置用於在所述陽極(104)與所述陰極(114)之間以可選擇的電流密度分佈施加電流。 The electroplating device (100) of claim 1, wherein the electroplating device (100) comprises: a cathode (114) to be electrically coupled to the component carrier structure (102) to be electroplated; and at least one current source (116) configured to distribute an applied current between the anode (104) and the cathode (114) at a selectable current density. 如請求項1之其中陽極(104)的數量和陰極(114)的數量是不同的。As in claim 1, wherein the number of anodes (104) and the number of cathodes (114) are different. 如請求項1之電鍍覆設備(100),其中所述電鍍覆設備(100)包括傳送機構(118),所述傳送機構(118)用於沿著所述陽極(104)傳送所述部件承載件結構(102)。The electroplating apparatus (100) of claim 1, wherein the electroplating apparatus (100) comprises a conveying mechanism (118), wherein the conveying mechanism (118) is used to convey the component carrier structure (102) along the anode (104). 如請求項19之電鍍覆設備(100),其中所述傳送機構(118)用於沿著所述陽極(104)以沿著連續佈置的陽極部分(106)中的至少部分傳送所述部件承載件結構(102)。The electroplating apparatus (100) of claim 19, wherein the conveying mechanism (118) is used to convey the component carrier structure (102) along the anode (104) along at least a portion of the continuously arranged anode portion (106). 如請求項19之電鍍覆設備(100),其中,所述傳送機構(118)被配置用於:沿著所述陽極部分(106)中的至少一些陽極部分(106)在水準取向上傳送所述部件承載件結構(102)。The electroplating apparatus (100) of claim 19, wherein the conveying mechanism (118) is configured to convey the component carrier structure (102) in a horizontal orientation along at least some of the anode portions (106). 如請求項21之電鍍覆設備(100),其中,所述傳送機構(118)被配置用於:沿著所述陽極部分(106)中的至少一些陽極部分(106)在水準取向上傳送所述部件承載件結構(102),以沿著與所述陽極部分(106)的取向平行的方向傳送所述部件承載件結構(102)。The electroplating apparatus (100) of claim 21, wherein the conveying mechanism (118) is configured to convey the component carrier structure (102) in a horizontal orientation along at least some of the anode portions (106) so as to convey the component carrier structure (102) in a direction parallel to the orientation of the anode portions (106). 一種對部件承載件結構(102)進行電鍍覆的方法,其中所述方法包括: 將陽極(104)分成多個單獨的陽極部分(106); 通過每個陽極部分(106)向所述部件承載件結構(102)的指定部段(120)提供單獨的電流密度,以用於在待被電鍍覆的所述部件承載件結構(102)的延伸部之上提供空間上相關的電流密度分布;以及 順序地傳送所述部件承載件結構(102) 通過多個電鍍覆槽(110),其中所述電鍍覆槽(110)中的各者包括所述陽極(104),所述陽極(104)被分成多個單獨的陽極部分(106),各個陽極部分(106)的電流密度調整允許對所述部件承載件結構(102)上的金屬厚度分佈進行微調。 A method for electroplating a component carrier structure (102), wherein the method comprises: dividing an anode (104) into a plurality of separate anode portions (106); providing a separate current density to a designated section (120) of the component carrier structure (102) through each anode portion (106) for providing a spatially related current density distribution over an extension of the component carrier structure (102) to be electroplated; and sequentially conveying the component carrier structure (102) Through a plurality of electroplating cells (110), each of which includes the anode (104), the anode (104) is divided into a plurality of individual anode sections (106), and current density adjustment of each anode section (106) allows fine tuning of the metal thickness distribution on the component carrier structure (102). 如請求項23之方法,其中所述方法包括:控制所述陽極(104),以相比於所述部件承載件結構(102)的延伸部之上的空間上無關的電流密度而言,在所述部件承載件結構(102)上提供更均匀的厚度分布的鍍覆金屬。A method as claimed in claim 23, wherein the method includes: controlling the anode (104) to provide a more uniform thickness distribution of the coated metal on the component carrier structure (102) compared to the spatially independent current density over the extension of the component carrier structure (102). 如請求項23或24之方法,其中,所述方法包括: 確定指示待被電鍍覆的所述部件承載件結構(102)之上的金屬分布的信息;以及 調整或重新調整所述部件承載件結構(102)的延伸部之上的所述空間上相關的電流密度分布,以使所述部件承載件結構(102)之上的所述金屬分布的厚度變化減小。 A method as claimed in claim 23 or 24, wherein the method comprises: determining information indicative of a metal distribution on the component carrier structure (102) to be electroplated; and adjusting or re-adjusting the spatially related current density distribution on an extension of the component carrier structure (102) to reduce a thickness variation of the metal distribution on the component carrier structure (102). 如請求項23之方法,其中,所述部件承載件結構(102)包括面板、陣列或部件承載件。A method as claimed in claim 23, wherein the component carrier structure (102) includes a panel, an array or a component carrier. 如請求項26之方法,其中,所述部件承載件為印刷電路板。A method as claimed in claim 26, wherein the component carrier is a printed circuit board.
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