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TWI877758B - Chamber structure and cleaning method for cleaning waste in a polishing pad groove - Google Patents

Chamber structure and cleaning method for cleaning waste in a polishing pad groove Download PDF

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Publication number
TWI877758B
TWI877758B TW112132967A TW112132967A TWI877758B TW I877758 B TWI877758 B TW I877758B TW 112132967 A TW112132967 A TW 112132967A TW 112132967 A TW112132967 A TW 112132967A TW I877758 B TWI877758 B TW I877758B
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chamber
cleaning
vacuum adsorption
grinding pad
chamber structure
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TW112132967A
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TW202426189A (en
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司馬超
尹影
張康
龐浩
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大陸商北京晶亦精微科技股份有限公司
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/10Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working

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  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

本申請公開了一種用於清洗研磨墊溝槽內廢棄物的腔室結構及清洗方法,腔室結構的內部設有相互獨立設置的清洗腔和真空吸附腔,腔室結構的外壁設有與清洗腔連通的清洗腔接口和與真空吸附腔連通的真空吸附接口,清洗腔接口用於連接清洗裝置以供清洗介質進入清洗腔內,真空吸附接口用於連接真空吸附裝置以便進入真空吸附腔內的帶有廢棄物的清洗介質被向外吸出,腔室結構的底部還設有下凹腔,下凹腔的底部開口用於被研磨墊上表面密封;腔室結構的內部還設有連通下凹腔和清洗腔的清洗孔、以及連通下凹腔和真空吸附腔的真空吸附孔。可將研磨墊上表面上的溝槽內的廢棄物經分解清洗並吸附出研磨墊上表面。The present application discloses a chamber structure and a cleaning method for cleaning waste in a grinding pad groove. The interior of the chamber structure is provided with a cleaning chamber and a vacuum adsorption chamber which are independently arranged. The outer wall of the chamber structure is provided with a cleaning chamber interface connected to the cleaning chamber and a vacuum adsorption interface connected to the vacuum adsorption chamber. The cleaning chamber interface is used to connect a cleaning device to allow a cleaning medium to enter the cleaning chamber. The vacuum adsorption interface is used to connect a vacuum adsorption device so that the cleaning medium with waste entering the vacuum adsorption chamber is sucked out. A lower concave cavity is also provided at the bottom of the chamber structure. The bottom opening of the lower concave cavity is used to be sealed with the upper surface of the grinding pad. The interior of the chamber structure is also provided with a cleaning hole connecting the lower concave cavity and the cleaning chamber, and a vacuum adsorption hole connecting the lower concave cavity and the vacuum adsorption cavity. The waste in the grooves on the upper surface of the polishing pad can be decomposed, cleaned and adsorbed out of the upper surface of the polishing pad.

Description

用於清洗研磨墊溝槽內廢棄物的腔室結構及清洗方法Chamber structure and cleaning method for cleaning waste in a polishing pad groove

本申請係關於晶圓研磨加工設備技術領域,具體係關於一種用於清洗研磨墊溝槽內廢棄物的腔室結構及清洗方法。 This application relates to the field of wafer grinding equipment technology, and more specifically to a chamber structure and cleaning method for cleaning waste in a grinding pad groove.

在基板拋光過程中,其主要的製程步驟為:首選研磨頭吸附基板並將基板放置於研磨墊上,然後通過研磨頭對基板實行下壓力,與此同時,研磨液通過輸送系統供應到研磨墊上,研磨墊和研磨頭同向但不同軸轉動,研磨液隨研磨墊的轉動到達基板的下方,由於研磨墊和基板相對運動,使得研磨液裡的顆粒物可對基板進行研磨拋光。 In the substrate polishing process, the main process steps are: first, the polishing head adsorbs the substrate and places the substrate on the polishing pad, and then the polishing head applies downward pressure to the substrate. At the same time, the polishing liquid is supplied to the polishing pad through the conveying system. The polishing pad and the polishing head rotate in the same direction but on different axes. The polishing liquid reaches the bottom of the substrate as the polishing pad rotates. Due to the relative movement of the polishing pad and the substrate, the particles in the polishing liquid can polish the substrate.

在經過研磨後,基板表面可能會有缺陷出現,而在基板表面缺陷中,機械性損傷係較為常見的基板表面缺陷種類之一,也係一種較為嚴重的基板表面缺陷,此等缺陷一般產生於基板的化學機械拋光步驟或切片步驟。 After grinding, defects may appear on the substrate surface. Among the defects on the substrate surface, mechanical damage is one of the more common types of substrate surface defects and is also a more serious type of substrate surface defect. These defects are generally generated during the chemical mechanical polishing step or slicing step of the substrate.

而在化學機械拋光中造成基板表面機械性損傷的主要原因之一係被研磨墊溝槽內的廢棄物所劃傷。因為研磨液係具有粘性的液體,在長時間的機械拋光製程中,容易在研磨墊的溝槽內形成結晶體,而研磨墊的溝槽的寬度較小(約為0.7mm),不易對研磨墊的溝槽內的結晶廢棄物進行有效清洗處理。 One of the main reasons for mechanical damage to the substrate surface during chemical mechanical polishing is scratches from waste in the polishing pad grooves. Because the polishing fluid is a viscous liquid, crystals are easily formed in the polishing pad grooves during a long mechanical polishing process. The width of the polishing pad grooves is relatively small (about 0.7mm), making it difficult to effectively clean the crystallized waste in the polishing pad grooves.

習知技術中,通過修整器對研磨墊進行製程調整。其中,修整器的主要功能為:一、實現研磨液在研磨墊上的均勻分佈;二、通過 修整器調整研磨墊表面的粗糙度;三、通過修整器對研磨墊進行刷洗,清除研磨墊表面的溝槽內的晶體廢棄物殘留。 In the conventional technology, the process of the grinding pad is adjusted by a dresser. The main functions of the dresser are: 1. To achieve uniform distribution of the grinding fluid on the grinding pad; 2. To adjust the roughness of the surface of the grinding pad by the dresser; 3. To scrub the grinding pad by the dresser to remove the crystal waste residues in the grooves on the surface of the grinding pad.

具體地,修整器的硬質圓盤的底面上帶有凸點,修整器在研磨墊上做往復圓周運動,帶凸點的硬質圓盤反復對研磨墊表面進行剮蹭從而對研磨墊表面粗糙度進行修整,並對存於研磨墊表面的廢棄物及顆粒物進行清理。 Specifically, the bottom surface of the hard disc of the dresser has bumps, and the dresser performs reciprocating circular motion on the grinding pad. The hard disc with bumps repeatedly scrapes the surface of the grinding pad to trim the surface roughness of the grinding pad and clean the waste and particles on the surface of the grinding pad.

但是,由於修整器的硬質圓盤上的凸點無法完全契合研磨墊溝槽的形狀,因此附著於研磨墊溝槽內的結晶廢棄物無法得到充分的清理,而且由於研磨墊表面為多孔形態的粗糙面以及修整器的往復圓周運動過程中對顆粒廢棄物所產生的下壓力,也會造成研磨墊表面的顆粒廢棄物被壓入研磨墊表面的多孔縫隙中,不易被清理。 However, since the bumps on the hard disc of the dresser cannot completely fit the shape of the grooves of the grinding pad, the crystal waste attached to the grooves of the grinding pad cannot be fully cleaned. In addition, since the surface of the grinding pad is a porous rough surface and the downward pressure on the particle waste during the reciprocating circular motion of the dresser will also cause the particle waste on the surface of the grinding pad to be pressed into the porous gaps on the surface of the grinding pad, making it difficult to clean.

鑒於習知技術中研磨墊的溝槽內的廢棄物無法有效清理的缺陷,有必要設計一種新的用於清洗研磨墊溝槽內廢棄物的腔室結構。 In view of the defect that the waste in the groove of the polishing pad in the prior art cannot be effectively cleaned, it is necessary to design a new chamber structure for cleaning the waste in the groove of the polishing pad.

因此,本申請要解決的技術問題在於克服習知技術中的研磨墊溝槽內的廢棄物無法有效清理的缺陷,從而提供一種用於清洗研磨墊溝槽內廢棄物的腔室結構及清洗方法。 Therefore, the technical problem to be solved by this application is to overcome the defect that the waste in the grinding pad groove in the prior art cannot be effectively cleaned, thereby providing a chamber structure and cleaning method for cleaning the waste in the grinding pad groove.

為解決上述技術問題,本申請的技術方案如下: To solve the above technical problems, the technical solution of this application is as follows:

一種用於清洗研磨墊溝槽內廢棄物的腔室結構,該腔室結構的內部設有相互獨立設置的清洗腔和真空吸附腔,該腔室結構的外壁設有與該清洗腔連通的清洗腔接口和與該真空吸附腔連通的真空吸附接口,該清洗腔接口用於連接清洗裝置以供清洗介質進入該清洗腔內,該真空吸附接口用於連接真空吸附裝置以便該真空吸附腔內的介質被向外吸出,該 腔室結構的底部還設有下凹腔,該下凹腔的底部開口用於被研磨墊上表面密封;該腔室結構的內部還設有連通該下凹腔和該清洗腔的清洗孔、以及連通該下凹腔和該真空吸附腔的真空吸附孔。 A chamber structure for cleaning waste in a grinding pad groove, wherein the chamber structure is provided with a cleaning chamber and a vacuum adsorption chamber independently arranged therein, and the outer wall of the chamber structure is provided with a cleaning chamber interface connected to the cleaning chamber and a vacuum adsorption interface connected to the vacuum adsorption chamber, wherein the cleaning chamber interface is used to connect a cleaning device to allow a cleaning medium to enter the cleaning chamber, and the vacuum adsorption interface is used to connect a vacuum adsorption device so that the medium in the vacuum adsorption chamber is sucked outward, and a lower concave chamber is also provided at the bottom of the chamber structure, and the bottom opening of the lower concave chamber is used to be sealed by the upper surface of the grinding pad; and a cleaning hole connecting the lower concave chamber and the cleaning chamber, and a vacuum adsorption hole connecting the lower concave chamber and the vacuum adsorption chamber are also provided inside the chamber structure.

進一步地,該腔室結構的側壁與該研磨墊上表面之間的壓力為0.1psi-0.2psi。 Furthermore, the pressure between the side wall of the chamber structure and the upper surface of the polishing pad is 0.1psi-0.2psi.

進一步地,該清洗腔的高度不小於11mm,且該下凹腔與該清洗腔對應的頂壁距離該研磨墊上表面不小於4mm。 Furthermore, the height of the cleaning chamber is not less than 11 mm, and the top wall of the lower concave chamber corresponding to the cleaning chamber is not less than 4 mm away from the upper surface of the polishing pad.

進一步地,該真空吸附腔的高度為10mm-15mm,且該下凹腔與該真空吸附腔對應的頂壁距離該研磨墊上表面為1.5mm-2.2mm。 Furthermore, the height of the vacuum adsorption chamber is 10mm-15mm, and the distance between the top wall of the lower concave chamber and the vacuum adsorption chamber and the upper surface of the polishing pad is 1.5mm-2.2mm.

進一步地,該真空吸附腔的壓力值為-15psi--5psi。 Furthermore, the pressure value of the vacuum adsorption chamber is -15psi--5psi.

進一步地,該真空吸附腔包括第一真空吸附腔和第二真空吸附腔,該第一真空吸附腔和該第二真空吸附腔分別位於該清洗腔的兩相對側。 Furthermore, the vacuum adsorption chamber includes a first vacuum adsorption chamber and a second vacuum adsorption chamber, and the first vacuum adsorption chamber and the second vacuum adsorption chamber are respectively located at two opposite sides of the cleaning chamber.

進一步地,該第一真空吸附腔對應的該真空吸附接口開設於該腔室結構的外側壁上,該第二真空吸附腔對應的該真空吸附接口開設於該腔室結構的頂壁上,該清洗腔接口也開設於該腔室結構的頂壁上。 Furthermore, the vacuum adsorption interface corresponding to the first vacuum adsorption chamber is opened on the outer wall of the chamber structure, the vacuum adsorption interface corresponding to the second vacuum adsorption chamber is opened on the top wall of the chamber structure, and the cleaning chamber interface is also opened on the top wall of the chamber structure.

進一步地,該腔室結構分為兩個相互獨立的子腔室結構,各該等子腔室結構內均設有該清洗腔、該清洗腔接口、連通該下凹腔和該清洗腔的該清洗孔、該真空吸附腔、該真空吸附接口、連通該下凹腔和該真空吸附腔的該真空吸附孔。 Furthermore, the chamber structure is divided into two independent sub-chamber structures, each of which is provided with the cleaning chamber, the cleaning chamber interface, the cleaning hole connecting the lower concave chamber and the cleaning chamber, the vacuum adsorption chamber, the vacuum adsorption interface, and the vacuum adsorption hole connecting the lower concave chamber and the vacuum adsorption chamber.

進一步地,該腔室結構靠近該研磨墊上表面中心的端壁側向延伸形成有擋板,該擋板用於引導在該腔室結構外清洗該研磨墊上表面的超潔淨水沿該腔室結構縱長的側壁流向研磨墊的外緣。 Furthermore, the end wall of the chamber structure near the center of the upper surface of the polishing pad is extended laterally to form a baffle, and the baffle is used to guide the ultra-clean water used to clean the upper surface of the polishing pad outside the chamber structure to flow along the longitudinal side wall of the chamber structure to the outer edge of the polishing pad.

進一步地,該清潔孔為長條孔且對著該研磨墊上表面的溝槽,該長條孔的尺寸為5mm×2mm,該真空吸附孔為圓孔,直徑為5mm-6mm。 Furthermore, the cleaning hole is a long hole facing the groove on the upper surface of the polishing pad, the size of the long hole is 5mm×2mm, and the vacuum adsorption hole is a round hole with a diameter of 5mm-6mm.

本申請技術方案,具有如下優點: This application technical solution has the following advantages:

1.本申請提供的用於清洗研磨墊溝槽內廢棄物的腔室結構,自清洗接口接入的清洗介質從清洗孔沖出後,沖向溝槽內的廢棄物,清洗介質的流動性特點,使得清洗介質可以無死角的對溝槽進行沖洗,進而將研磨墊上表面的溝槽內的廢棄物衝擊分解並與溝槽的內壁剝離,帶有廢棄物的清洗介質流動於下凹腔對應的研磨墊上表面,進而被真空吸附孔吸附後進入真空吸附腔並最終進入真空吸附裝置,從而實現對溝槽內的廢棄物的有效清理。 1. The chamber structure provided in this application is used to clean the waste in the groove of the grinding pad. After the cleaning medium connected to the cleaning interface is flushed out from the cleaning hole, it is flushed towards the waste in the groove. The fluidity characteristics of the cleaning medium enable the cleaning medium to flush the groove without dead angles, thereby impacting and decomposing the waste in the groove on the upper surface of the grinding pad and peeling it off from the inner wall of the groove. The cleaning medium with waste flows on the upper surface of the grinding pad corresponding to the lower concave cavity, and then is adsorbed by the vacuum adsorption hole and enters the vacuum adsorption cavity and finally enters the vacuum adsorption device, thereby realizing effective cleaning of the waste in the groove.

2.本申請提供的用於清洗研磨墊溝槽內廢棄物的腔室結構,腔室結構的側壁與研磨墊上表面之間的壓力為0.1psi-0.2psi,既可以保證研磨墊的正常轉動,又能保證在腔室結構與研磨墊之間形成相對密閉的密封環境,以確保帶有廢棄物的清洗介質能夠被快速真空吸附清理。 2. The chamber structure provided in this application is used to clean the waste in the groove of the polishing pad. The pressure between the side wall of the chamber structure and the upper surface of the polishing pad is 0.1psi-0.2psi, which can ensure the normal rotation of the polishing pad and form a relatively closed sealed environment between the chamber structure and the polishing pad to ensure that the cleaning medium containing waste can be quickly vacuumed and cleaned.

3.本申請提供的用於清洗研磨墊溝槽內廢棄物的腔室結構,腔室結構的靠近研磨墊中心的端壁側向延伸形成擋板,在用超潔淨水在腔室結構外且在腔室結構所在側沖洗研磨墊上表面時,超潔淨水流向腔室結構的側壁,並經擋板阻擋、引導後沿腔室結構的側壁流向研磨墊的外緣,防止過多的超潔淨水進入研磨墊的中心區域或靠近研磨頭的區域、導致該區域內的研磨液被稀釋、造成基板拋光效率低、無法滿足其他製程的基板製造要求。 3. The chamber structure provided in this application is used to clean waste in the groove of the polishing pad. The end wall of the chamber structure near the center of the polishing pad extends laterally to form a baffle. When the upper surface of the polishing pad is rinsed with super-clean water outside the chamber structure and on the side where the chamber structure is located, the super-clean water flows to the side wall of the chamber structure, and after being blocked and guided by the baffle, it flows along the side wall of the chamber structure to the outer edge of the polishing pad, preventing excessive super-clean water from entering the central area of the polishing pad or the area near the polishing head, causing the polishing liquid in the area to be diluted, resulting in low substrate polishing efficiency and failure to meet the substrate manufacturing requirements of other processes.

4.本申請提供的用於清洗研磨墊溝槽內廢棄物的腔室結 構,腔室結構分為兩個相互獨立的子腔室結構,可減小真空吸附腔的長度,以便讓帶有廢棄物的清洗介質在較小的範圍內流動,方便真空吸附孔吸附清理。 4. The chamber structure provided in this application for cleaning waste in the groove of the grinding pad is divided into two independent sub-chamber structures, which can reduce the length of the vacuum adsorption chamber so that the cleaning medium with waste can flow in a smaller range, which is convenient for vacuum adsorption holes to adsorb and clean.

一種清洗研磨墊溝槽內廢棄物的方法,包括以下步驟:在研磨墊上放置前述的用於清洗研磨墊溝槽內廢棄物的腔室結構;使用接通腔室結構的清洗介質對研磨墊上表面進行物理化學清洗;使用接通該腔室結構的真空吸附裝置排出該研磨墊上表面的廢棄物。 A method for cleaning waste in a grinding pad groove comprises the following steps: placing the aforementioned chamber structure for cleaning waste in the grinding pad groove on the grinding pad; using a cleaning medium connected to the chamber structure to perform physical and chemical cleaning on the upper surface of the grinding pad; using a vacuum adsorption device connected to the chamber structure to discharge waste on the upper surface of the grinding pad.

本申請技術方案,具有如下優點: This application technical solution has the following advantages:

1.本申請中的清洗研磨墊溝槽內廢棄物的方法,具有前述用於清洗研磨墊溝槽內廢棄物的腔室結構的優點。 1. The method for cleaning waste in the groove of the polishing pad in this application has the advantages of the aforementioned chamber structure for cleaning waste in the groove of the polishing pad.

1:腔室結構 1: Chamber structure

1a:內側子腔室結構 1a: Inner chamber structure

1b:外側子腔室結構 1b: External sub-chamber structure

2:研磨墊上表面 2: Grinding pad upper surface

3:研磨頭 3: Grinding head

4:修整器 4: Dresser

5:研磨液滴定模組 5: Grinding liquid titration module

6:超潔淨水清洗模組 6: Ultra-clean water cleaning module

7:調壓閥 7: Pressure regulating valve

8:篩檢程式 8: Filtering program

11:清洗腔 11: Cleaning chamber

12:真空吸附腔 12: Vacuum adsorption chamber

12a:第一真空吸附腔 12a: The first vacuum adsorption chamber

12b:第二真空吸附腔 12b: Second vacuum adsorption chamber

13:下凹腔 13: Lower concave cavity

14:擋板 14: Baffle

111:清洗腔接口 111: Cleaning chamber interface

112:清洗孔 112: Cleaning hole

121:真空吸附接口 121: Vacuum adsorption interface

122:真空吸附孔 122: Vacuum adsorption hole

為了更清楚地說明本申請具體實施方式或技術方案,下面將對具體實施方式或技術描述中所需要使用的附圖作簡單地介紹,顯而易見地,下面描述中的附圖係本申請的一些實施方式,對於具有本領域通常知識者來講,在不付出創造性勞動的前提下,根據這些附圖獲得的所有其他實施例皆屬於本申請保護的範圍。 In order to more clearly explain the specific implementation or technical solution of this application, the following will briefly introduce the drawings required for the specific implementation or technical description. Obviously, the drawings described below are some implementations of this application. For those with ordinary knowledge in this field, all other embodiments obtained based on these drawings are within the scope of protection of this application without creative labor.

圖1為本申請的腔室結構在基板化學機械拋光系統中的位置示意圖;圖2為本申請的腔室結構與研磨墊滴定模組之間的位置關係示意圖; 圖3為本申請的腔室結構與超潔淨水清洗模組在研磨墊上與研磨頭的位置關係示意圖;圖4為本申請的腔室結構在順時針轉動的研磨墊上的位置關係示意圖;圖5為本申請的腔室結構的立體示意圖;圖6為本申請的腔室結構的局部立體示意圖;圖7為本申請的腔室結構的平面示意圖;圖8為本申請中的腔室結構連接的真空吸附裝置的吸附原理示意圖。 Figure 1 is a schematic diagram of the position of the chamber structure of the present application in the substrate chemical mechanical polishing system; Figure 2 is a schematic diagram of the positional relationship between the chamber structure of the present application and the grinding pad titration module; Figure 3 is a schematic diagram of the positional relationship between the chamber structure of the present application and the ultra-clean water cleaning module on the grinding pad and the grinding head; Figure 4 is a schematic diagram of the positional relationship of the chamber structure of the present application on the clockwise rotating grinding pad; Figure 5 is a three-dimensional schematic diagram of the chamber structure of the present application; Figure 6 is a partial three-dimensional schematic diagram of the chamber structure of the present application; Figure 7 is a planar schematic diagram of the chamber structure of the present application; Figure 8 is a schematic diagram of the adsorption principle of the vacuum adsorption device connected to the chamber structure in the present application.

下面將結合附圖對本申請的技術方案進行清楚、完整地描述,顯然,所描述的實施例係本申請一部分實施例,而不是全部的實施例。基於本申請中的實施例,具有本領域通常知識者在沒有做出創造性勞動前提下所獲得的所有其他實施例,都屬於本申請保護的範圍。 The following will clearly and completely describe the technical solution of this application in conjunction with the attached drawings. Obviously, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by people with ordinary knowledge in this field without creative labor are within the scope of protection of this application.

在本申請的描述中,需要說明的係,術語“中心”、“上”、“下”、“左”、“右”、“豎直”、“水準”、“內”、“外”等指示的方位或位置關係為基於附圖所示的方位或位置關係,僅係為了便於描述本申請和簡化描述,而不是指示或暗示所指的裝置或元件必須具有特定的方位、以特定的方位構造和操作,因此不能理解為對本申請的限制。此外,術語“第一”、“第二”、“第三”僅用於描述目的,而不能理解為指示或暗示相對重要性。 In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the attached drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of this application. In addition, the terms "first", "second", and "third" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.

在本申請的描述中,需要說明的係,除非另有明確的規定和限定,術語“安裝”、“相連”、“連接”應做廣義理解,例如,可以係固定連接,也可以係可拆卸連接,或一體地連接;可以係機械連接,也可以係 電連接;可以係直接相連,也可以通過中間媒介間接相連,可以係兩個元件內部的連通。對於具有本領域通常知識者而言,可以具體情況理解上述術語在本申請中的具體含義。 In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be an indirect connection through an intermediate medium, or it can be a connection between two components. For those with general knowledge in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

此外,下面所描述的本申請不同實施方式中所涉及的技術特徵只要彼此之間未構成衝突就可以相互結合。 In addition, the technical features involved in the different implementations of this application described below can be combined with each other as long as they do not conflict with each other.

實施例1 Example 1

如圖1至圖8所示,本實施例提供一種用於清洗研磨墊溝槽內廢棄物的腔室結構,用以對研磨墊上表面2的溝槽內的廢棄物進行清洗。腔室結構1在基板化學機械拋光系統中與研磨墊上表面2、研磨頭3、修整器4、研磨液滴定模組5、超潔淨水清洗模組6之間的位置關系如圖1至圖3所示,在清洗研磨墊溝槽內廢棄物過程中研磨墊轉動,腔室結構1不動。 As shown in Figures 1 to 8, this embodiment provides a chamber structure for cleaning waste in the groove of the polishing pad, which is used to clean the waste in the groove of the upper surface 2 of the polishing pad. The positional relationship between the chamber structure 1 and the upper surface 2 of the polishing pad, the polishing head 3, the dresser 4, the polishing liquid droplet module 5, and the ultra-clean water cleaning module 6 in the substrate chemical mechanical polishing system is shown in Figures 1 to 3. During the process of cleaning the waste in the groove of the polishing pad, the polishing pad rotates, and the chamber structure 1 does not move.

腔室結構1的尺寸與基板的尺寸相匹配,在本實施例中,腔室結構1的外觀尺寸為270×40×19mm。腔室結構1的內部設有相互獨立設置的清洗腔11和真空吸附腔12。 The size of the chamber structure 1 matches the size of the substrate. In this embodiment, the external dimensions of the chamber structure 1 are 270×40×19 mm. The interior of the chamber structure 1 is provided with a cleaning chamber 11 and a vacuum adsorption chamber 12 which are independently arranged.

清洗腔11的長度為266mm,寬度為9mm,且清洗腔11的高度不少於11mm。在清洗腔11的底部開設有若干個清洗孔112,清洗孔112連通清洗腔11。清洗孔112為長條孔,清洗孔112呈一排設置,並等間距設置。清洗孔112的長度為5mm,寬為2mm,清洗腔11的底面距離研磨墊上表面2的距離不小於4mm,且各清洗孔112對應一至兩個研磨墊上表面2上的溝槽(未圖示),以有效地對溝槽內的廢棄物進行衝擊分解。 The length of the cleaning chamber 11 is 266mm, the width is 9mm, and the height of the cleaning chamber 11 is not less than 11mm. A plurality of cleaning holes 112 are opened at the bottom of the cleaning chamber 11, and the cleaning holes 112 are connected to the cleaning chamber 11. The cleaning holes 112 are long holes, and the cleaning holes 112 are arranged in a row and are arranged at equal intervals. The length of the cleaning holes 112 is 5mm, the width is 2mm, the distance between the bottom surface of the cleaning chamber 11 and the upper surface 2 of the grinding pad is not less than 4mm, and each cleaning hole 112 corresponds to one or two grooves on the upper surface 2 of the grinding pad (not shown), so as to effectively impact and decompose the waste in the groove.

真空吸附腔12包括位於清洗腔11兩相對側的第一真空吸附腔12a和第二真空吸附腔12b。第一真空吸附腔12a迎向超潔淨水清洗模組 6,第一真空吸附腔12a和第二真空吸附腔12b的尺寸相同,長度為266mm,寬度為12mm,高度10mm-15mm,較佳地為13mm,真空吸附腔12的底面距離研磨墊上表面2的距離為2mm。第一真空吸附腔12a和第二真空吸附腔12b的底部均開設有相同數量的真空吸附孔122,真空吸附孔122連通真空吸附腔12。第一真空吸附腔12a和第二真空吸附腔12b對應的真空吸附孔122的數量均為32個,且32個真空吸附空呈一排等間距佈置,真空吸附孔122為圓孔,圓形真空吸附孔122的直徑為5mm-6mm,以便有效地吸附從研磨墊上表面2的溝槽內被清洗介質衝擊分解出的廢棄物。 The vacuum adsorption chamber 12 includes a first vacuum adsorption chamber 12a and a second vacuum adsorption chamber 12b located at two opposite sides of the cleaning chamber 11. The first vacuum adsorption chamber 12a faces the ultra-clean water cleaning module 6. The first vacuum adsorption chamber 12a and the second vacuum adsorption chamber 12b have the same size, with a length of 266mm, a width of 12mm, a height of 10mm-15mm, preferably 13mm, and a distance of 2mm between the bottom surface of the vacuum adsorption chamber 12 and the upper surface 2 of the grinding pad. The first vacuum adsorption chamber 12a and the second vacuum adsorption chamber 12b are both provided with the same number of vacuum adsorption holes 122 at the bottom, and the vacuum adsorption holes 122 are connected to the vacuum adsorption chamber 12. The number of vacuum adsorption holes 122 corresponding to the first vacuum adsorption chamber 12a and the second vacuum adsorption chamber 12b is 32, and the 32 vacuum adsorption holes are arranged in a row with equal spacing. The vacuum adsorption holes 122 are circular holes, and the diameter of the circular vacuum adsorption holes 122 is 5mm-6mm, so as to effectively adsorb the waste decomposed by the cleaning medium from the groove on the upper surface 2 of the polishing pad.

腔室結構1的外壁設有與清洗腔11連通的清洗腔接口111以及與真空吸附腔12連通的真空吸附接口121。 The outer wall of the chamber structure 1 is provided with a cleaning chamber interface 111 connected to the cleaning chamber 11 and a vacuum adsorption interface 121 connected to the vacuum adsorption chamber 12.

清洗腔接口111用於連接清洗裝置(未圖示)以供清洗介質進入清洗腔11內。真空吸附接口121用於連接真空吸附裝置(未圖示)以便真空吸附腔12內的帶有廢棄物的清洗介質被向外吸出。在本實施例中,真空吸附裝置為液態的真空發生器,液態真空發生器具有防腐效用,真空發生器的本體材質選用聚四氟乙烯。真空吸附接口121連接的真空吸附裝置的吸附原理圖如圖8所示,真空吸附管路設計中通過使用調壓閥7進行壓力調整,以滿足真空吸附所需的壓力要求,並且在真空吸附管路中增加篩檢程式8,以對廢棄物中的大顆粒物進行過濾,防止廢棄物附著於管路內部造成管路和器件堵塞。 The cleaning chamber interface 111 is used to connect a cleaning device (not shown) to allow the cleaning medium to enter the cleaning chamber 11. The vacuum adsorption interface 121 is used to connect a vacuum adsorption device (not shown) so that the cleaning medium with waste in the vacuum adsorption chamber 12 can be sucked out. In this embodiment, the vacuum adsorption device is a liquid vacuum generator, which has an anti-corrosion effect, and the body material of the vacuum generator is polytetrafluoroethylene. The adsorption principle diagram of the vacuum adsorption device connected to the vacuum adsorption interface 121 is shown in FIG8 . In the design of the vacuum adsorption pipeline, the pressure is adjusted by using a pressure regulating valve 7 to meet the pressure requirements of the vacuum adsorption, and a screening program 8 is added to the vacuum adsorption pipeline to filter large particles in the waste to prevent the waste from adhering to the inside of the pipeline and causing the pipeline and device to be blocked.

第一真空吸附腔12a對應的真空吸附接口121開設於腔室結構1的側壁上,之所以這樣設計,一來,腔室結構1係與研磨液滴定模組5配合使用的,而研磨液滴定模組5的上部設有連杆機構(未圖示),連杆機 構在調整研磨液滴定模組5在研磨墊上的擺放位置時需要擺動,若第一真空吸附腔12a的真空吸附接口121設置在腔室結構1的頂壁的話,容易與連杆機構產生機械干涉和碰撞;二來,腔室結構1與研磨液滴定模組5配合連接,為了避免腔室結構1過大,從而導致腔室結構1和研磨液滴定模組5的總體重量比較大,進而影響研磨墊轉動,腔室結構1的尺寸要小些才好,那麼,在需要腔室結構1的尺寸較小的情況下,在腔室結構1的頂壁自然不易佈置較多真空吸附接口121,避免增加真空吸附接口121的設置難度以及相互之間干擾。在本實施例中,第二真空吸附腔12b對應的真空吸附接口121有兩個且開設於腔室結構1的頂壁上,當然,第二真空吸附腔12b對應的真空吸附接口121的數量也可以為其他數值,根據需要設置即可,清洗腔接口111有四個,且呈一排間隔設置,清洗腔接口111也開設於腔室結構1的頂壁上。 The vacuum adsorption interface 121 corresponding to the first vacuum adsorption chamber 12a is opened on the side wall of the chamber structure 1. The reason for this design is that, firstly, the chamber structure 1 is used in conjunction with the polishing liquid droplet module 5, and the upper part of the polishing liquid droplet module 5 is provided with a connecting rod mechanism (not shown). The connecting rod mechanism needs to be swung when adjusting the placement position of the polishing liquid droplet module 5 on the polishing pad. If the vacuum adsorption interface 121 of the first vacuum adsorption chamber 12a is set on the top wall of the chamber structure 1, it is easy to produce a connection with the connecting rod mechanism. Mechanical interference and collision; secondly, the chamber structure 1 is connected with the grinding liquid titration module 5. In order to avoid the chamber structure 1 being too large, which will cause the total weight of the chamber structure 1 and the grinding liquid titration module 5 to be relatively large, thereby affecting the rotation of the grinding pad, the size of the chamber structure 1 should be smaller. Then, when the size of the chamber structure 1 needs to be smaller, it is naturally not easy to arrange more vacuum adsorption interfaces 121 on the top wall of the chamber structure 1, so as to avoid increasing the difficulty of setting the vacuum adsorption interfaces 121 and interference between them. In this embodiment, there are two vacuum adsorption interfaces 121 corresponding to the second vacuum adsorption chamber 12b and they are opened on the top wall of the chamber structure 1. Of course, the number of vacuum adsorption interfaces 121 corresponding to the second vacuum adsorption chamber 12b can also be other values, which can be set as needed. There are four cleaning chamber interfaces 111, which are arranged in a row and spaced apart. The cleaning chamber interfaces 111 are also opened on the top wall of the chamber structure 1.

腔室結構1的底部還設有下凹腔13,下凹腔13的頂壁由清洗腔11和真空吸附腔12的底壁連接形成,下凹腔13的底部開口用於被研磨墊上表面2密封,並且,腔室結構1的側壁與研磨墊上表面2之間的壓力為0.1psi-0.2psi,這樣一來,既可以保證研磨墊的正常轉動,又能保證在腔室結構與研磨墊之間形成相對密閉的密封環境,以確保帶有廢棄物的清洗介質能夠被快速真空吸附清理。 The bottom of the chamber structure 1 is also provided with a concave cavity 13, the top wall of which is formed by connecting the bottom walls of the cleaning chamber 11 and the vacuum adsorption chamber 12, and the bottom opening of the concave cavity 13 is used to be sealed by the upper surface 2 of the grinding pad, and the pressure between the side wall of the chamber structure 1 and the upper surface 2 of the grinding pad is 0.1psi-0.2psi, so that the normal rotation of the grinding pad can be guaranteed, and a relatively closed sealing environment can be formed between the chamber structure and the grinding pad to ensure that the cleaning medium with waste can be quickly vacuum adsorbed and cleaned.

腔室結構1的內部還設有連通下凹腔13和清洗腔11的清洗孔112、以及連通下凹腔13和真空吸附腔12的真空吸附孔122。自清洗腔接口111接入的清洗腔11的有壓清洗介質的壓力範圍設定為5psi-21psi,以確保清洗介質能夠對結晶廢棄物進行有效的衝擊分解。真空吸附腔12內的壓力值為-15psi--5psi,以保證帶有衝擊分解後的廢棄物的清洗介質被 充分吸附清理。 The chamber structure 1 is also provided with a cleaning hole 112 connecting the lower concave chamber 13 and the cleaning chamber 11, and a vacuum adsorption hole 122 connecting the lower concave chamber 13 and the vacuum adsorption chamber 12. The pressure range of the pressurized cleaning medium of the cleaning chamber 11 connected from the cleaning chamber interface 111 is set to 5psi-21psi to ensure that the cleaning medium can effectively impact and decompose the crystallized waste. The pressure value in the vacuum adsorption chamber 12 is -15psi--5psi to ensure that the cleaning medium with the waste after impact decomposition is fully adsorbed and cleaned.

另外,在本實施例中,在圖7視角下,腔室結構1被劃分為兩個相互獨立的子腔室結構1,分別為內側子腔室結構1a和外側子腔室結構1b,各子腔室結構內均設有清洗腔11、清洗腔接口111、連通下凹腔13和清洗腔11的清洗孔112、真空吸附腔12、真空吸附接口121、連通下凹腔13和真空吸附腔12的真空吸附孔122,這樣一來,第一真空吸附腔12a和第二真空吸附腔12b的長度均變短,可減小清洗介質的流動範圍,方便真空吸附孔122對帶有分解後的廢棄物的清洗介質進行吸附清理。在本實施例中,第一真空吸附腔12a對應的真空吸附接口121有四個,當然也可以其他數值,根據需要設置即可,且,在第一真空吸附腔12a的中間部分,分隔腔室結構1的分隔板兩側的兩相鄰真空吸附接口121的間距較小,之所以這樣設計,係因為研磨液在此區域內參與研磨的次數比較多,在研磨墊上形成的廢棄物也就比較多,通過縮小在此區域內的相鄰的兩真空吸附接口121之間的間距,可以強化對此區域內的較多廢棄物的充分吸附清理。 In addition, in the present embodiment, from the perspective of FIG. 7 , the chamber structure 1 is divided into two independent sub-chamber structures 1, namely the inner sub-chamber structure 1a and the outer sub-chamber structure 1b. Each sub-chamber structure is provided with a cleaning chamber 11, a cleaning chamber interface 111, a cleaning hole 112 connecting the lower concave chamber 13 and the cleaning chamber 11, a vacuum adsorption chamber 12, a vacuum adsorption interface 121, and a vacuum adsorption hole 122 connecting the lower concave chamber 13 and the vacuum adsorption chamber 12. In this way, the lengths of the first vacuum adsorption chamber 12a and the second vacuum adsorption chamber 12b are shortened, which can reduce the flow range of the cleaning medium and facilitate the vacuum adsorption hole 122 to adsorb and clean the cleaning medium containing decomposed waste. In this embodiment, there are four vacuum adsorption interfaces 121 corresponding to the first vacuum adsorption chamber 12a. Of course, other values can be used as needed. In addition, in the middle part of the first vacuum adsorption chamber 12a, the distance between the two adjacent vacuum adsorption interfaces 121 on both sides of the partition plate separating the chamber structure 1 is relatively small. The reason for this design is that the polishing liquid participates in the polishing more times in this area, and the waste formed on the polishing pad is also relatively large. By reducing the distance between the two adjacent vacuum adsorption interfaces 121 in this area, the sufficient adsorption and cleaning of the more waste in this area can be enhanced.

再者,在本實施例中,腔室結構1靠近研磨墊上表面2中心的端壁側向延伸形成有擋板14,擋板14用於引導在腔室結構1外清洗研磨墊上表面2的超潔淨水沿腔室結構1縱長的側壁流向研磨墊的外緣,避免較多的超潔淨水進入研磨墊的中心區域或靠近研磨頭3的區域、導致該區域內的研磨液被稀釋、造成基板拋光效率低、無法滿足其他製程的基板製造要求。 Furthermore, in this embodiment, the end wall of the chamber structure 1 near the center of the upper surface 2 of the polishing pad is extended laterally to form a baffle 14, and the baffle 14 is used to guide the ultra-clean water for cleaning the upper surface 2 of the polishing pad outside the chamber structure 1 to flow along the longitudinal side wall of the chamber structure 1 to the outer edge of the polishing pad, so as to prevent more ultra-clean water from entering the central area of the polishing pad or the area near the polishing head 3, causing the polishing liquid in the area to be diluted, resulting in low substrate polishing efficiency and failure to meet the substrate manufacturing requirements of other processes.

下面介紹本實施例中的腔室結構1的工作過程: The working process of the chamber structure 1 in this embodiment is introduced below:

如圖4所示,在需要清洗研磨墊時,研磨墊開始順時針轉 動;清洗腔接口111接通並啟動清洗裝置,有壓清洗介質自清洗裝置、清洗腔接口111、清洗腔11和清洗孔112沖向研磨墊上表面2的溝槽,以物理方式衝擊溝槽內的廢棄物使其分解且自溝槽的內壁剝離,廢棄物隨清洗介質在研磨墊上表面2流動,在本實施例中,清洗介質為超潔淨水,當然,也可以使用去離子水、活化劑和氣態流體,其中,用有壓活化劑來清洗時,則為物理化學方式清洗,活性劑的使用不局限於中和劑、表面活性劑、腐蝕抑制劑;與此同時,真空吸附接口121接通並啟動真空吸附裝置,使真空吸附腔12內為負壓,負壓範圍為-15psi--5psi,保證流動於研磨墊上表面2的帶有廢棄物的清洗介質經由真空吸附孔122、真空吸附腔12和真空吸附裝置被吸出腔室結構1,由於在清洗腔11的兩側分別設置有第一真空吸附腔12a和第二真空吸附腔12b,各自都具有真空吸附孔122,且第一真空吸附腔12a比第二真空吸附腔12b對應的真空吸附接口121的數量多餘,第一真空吸附腔12a可先行對帶有廢棄物的清洗介質進行較好的先行吸附清理,而後,第二真空吸附腔12b再對帶有廢棄物的清洗介質進行二次吸附清理,另外,由於腔室結構1在縱長方向上劃分為兩個獨立的子腔室,各子腔室均設有清洗腔11、清洗腔接口111、連通下凹腔13和清洗腔11的清洗孔112、真空吸附腔12、真空吸附接口121、連通下凹腔13和真空吸附腔12的真空吸附孔122,這樣一來,第一真空吸附腔12a和第二真空吸附腔12b的長度均變短,帶有廢棄物的清洗介質流動在比較小的範圍,方便真空吸附孔122對其進行充分有效的吸附清理。 As shown in FIG. 4 , when the polishing pad needs to be cleaned, the polishing pad starts to rotate clockwise; the cleaning chamber interface 111 is connected and the cleaning device is started, and the pressurized cleaning medium is rushed to the groove on the upper surface 2 of the polishing pad from the cleaning device, the cleaning chamber interface 111, the cleaning chamber 11 and the cleaning hole 112, and the waste in the groove is physically impacted to decompose and peel off from the inner wall of the groove, and the waste flows on the upper surface 2 of the polishing pad with the cleaning medium. In this embodiment, the cleaning medium is ultra-clean water. Of course, deionized water, activator and gas can also be used. The cleaning medium with wastes flowing on the upper surface 2 of the polishing pad is sucked out of the chamber structure 1 through the vacuum adsorption hole 122, the vacuum adsorption chamber 12 and the vacuum adsorption device. The first vacuum adsorption chamber 12a and the second vacuum adsorption chamber 12b are respectively provided on both sides of the chamber 11, each of which has a vacuum adsorption hole 122, and the first vacuum adsorption chamber 12a has more vacuum adsorption interfaces 121 than the second vacuum adsorption chamber 12b. The first vacuum adsorption chamber 12a can firstly perform a better pre-adsorption cleaning of the cleaning medium with waste, and then the second vacuum adsorption chamber 12b can perform a secondary adsorption cleaning of the cleaning medium with waste. In addition, since the chamber structure 1 is longitudinally arranged It is divided into two independent sub-chambers, each of which is provided with a cleaning chamber 11, a cleaning chamber interface 111, a cleaning hole 112 connecting the lower concave chamber 13 and the cleaning chamber 11, a vacuum adsorption chamber 12, a vacuum adsorption interface 121, and a vacuum adsorption hole 122 connecting the lower concave chamber 13 and the vacuum adsorption chamber 12. In this way, the lengths of the first vacuum adsorption chamber 12a and the second vacuum adsorption chamber 12b are shortened, and the cleaning medium with waste flows in a relatively small range, which is convenient for the vacuum adsorption hole 122 to fully and effectively adsorb and clean it.

另外,本實施例中,在研磨墊的轉動方向上,由於腔室結 構1設於超潔淨水清洗模組6的前方,在用超潔淨水沖洗研磨墊上表面2時,超潔淨水流向腔室結構1的側壁,並經擋板14阻擋、引導後沿腔室結構1的側壁流向研磨墊的外緣,防止過多的超潔淨水進入研磨墊的中心區域或靠近研磨頭3的區域。 In addition, in this embodiment, in the rotation direction of the polishing pad, since the chamber structure 1 is arranged in front of the super-clean water cleaning module 6, when the upper surface 2 of the polishing pad is washed with super-clean water, the super-clean water flows to the side wall of the chamber structure 1, and is blocked and guided by the baffle 14, and then flows along the side wall of the chamber structure 1 to the outer edge of the polishing pad, thereby preventing excessive super-clean water from entering the central area of the polishing pad or the area near the polishing head 3.

綜上,在本實施例中,自清洗接口接入的清洗介質從清洗孔沖出後,沖向溝槽內的廢棄物,清洗介質的流動性特點,使得清洗介質可以無死角的對溝槽進行沖洗,進而將研磨墊上表面的溝槽內的廢棄物衝擊分解並與溝槽的內壁剝離,帶有廢棄物的清洗介質流動於下凹腔對應的研磨墊上表面,進而被真空吸附孔吸附後進入真空吸附腔並最終進入真空吸附裝置,從而實現對溝槽內的廢棄物的有效清理。 In summary, in this embodiment, the cleaning medium connected from the cleaning interface flushes out from the cleaning hole and flushes toward the waste in the groove. The fluidity characteristics of the cleaning medium enable the cleaning medium to flush the groove without dead angles, thereby impacting and decomposing the waste in the groove on the upper surface of the polishing pad and peeling it off from the inner wall of the groove. The cleaning medium with waste flows on the upper surface of the polishing pad corresponding to the lower concave cavity, and then is adsorbed by the vacuum adsorption hole and enters the vacuum adsorption cavity and finally enters the vacuum adsorption device, thereby achieving effective cleaning of the waste in the groove.

實施例2 Example 2

本實施例提供一種清洗研磨墊溝槽內廢棄物的方法,包括以下步驟:在研磨墊上放置前述的用於清洗研磨墊溝槽內廢棄物的腔室結構;使用接通腔室結構1的清洗介質對研磨墊上表面2進行物理或物理化學清洗;使用接通腔室結構1的真空吸附裝置排出研磨墊上表面2的顆粒廢棄物。 This embodiment provides a method for cleaning waste in a grinding pad groove, comprising the following steps: placing the aforementioned chamber structure for cleaning waste in a grinding pad groove on the grinding pad; using a cleaning medium connected to the chamber structure 1 to physically or physicochemically clean the upper surface 2 of the grinding pad; using a vacuum adsorption device connected to the chamber structure 1 to discharge the particle waste on the upper surface 2 of the grinding pad.

顯然,上述實施例僅僅係為清楚地說明所作的舉例,而並非對實施方式的限定。對於具有本領域通常知識者來說,在上述說明的基礎上還可以做出其它不同形式的變化或變動。這裡無需也無法對所有的實施方式予以窮舉。而由此所引伸出的顯而易見的變化或變動仍處於本申請 創造的保護範圍之中。 Obviously, the above embodiments are only examples for clear explanation, and are not limitations on the implementation methods. For those with general knowledge in this field, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here. The obvious changes or modifications derived from this are still within the scope of protection of this application creation.

11:清洗腔 11: Cleaning chamber

12:真空吸附腔 12: Vacuum adsorption chamber

12a:第一真空吸附腔 12a: The first vacuum adsorption chamber

12b:第二真空吸附腔 12b: Second vacuum adsorption chamber

13:下凹腔 13: Lower concave cavity

111:清洗腔接口 111: Cleaning chamber interface

121:真空吸附接口 121: Vacuum adsorption interface

Claims (11)

一種用於清洗研磨墊溝槽內廢棄物的腔室結構(1),其中該腔室結構(1)的內部設有相互獨立設置的清洗腔(11)和真空吸附腔(12),該腔室結構(1)的外壁設有與該清洗腔(11)連通的清洗腔接口(111)和與該真空吸附腔(12)連通的真空吸附接口(121),該清洗腔接口(111)用於連接清洗裝置以供清洗介質進入該清洗腔(11)內,該真空吸附接口(121)用於連接真空吸附裝置以便將進入該真空吸附腔(12)內的帶有廢棄物的該清洗介質被向外吸出,該腔室結構(1)的底部還設有下凹腔(13),該下凹腔(13)的底部開口用於被研磨墊上表面(2)密封;該腔室結構(1)的內部還設有連通該下凹腔(13)和該清洗腔(11)的清洗孔(112)、以及連通該下凹腔(13)和該真空吸附腔(12)的真空吸附孔(122)。A chamber structure (1) for cleaning waste in a grinding pad groove, wherein the chamber structure (1) is provided with a cleaning chamber (11) and a vacuum adsorption chamber (12) which are independently arranged, and the outer wall of the chamber structure (1) is provided with a cleaning chamber interface (111) connected to the cleaning chamber (11) and a vacuum adsorption interface (121) connected to the vacuum adsorption chamber (12), the cleaning chamber interface (111) is used to connect a cleaning device to allow a cleaning medium to enter the cleaning chamber (11), and the vacuum adsorption interface (121) is used to connect a cleaning device to a cleaning medium to enter the cleaning chamber (11). 1) is used to connect a vacuum adsorption device so that the cleaning medium containing waste entering the vacuum adsorption chamber (12) can be sucked out. The bottom of the chamber structure (1) is also provided with a lower concave chamber (13), and the bottom opening of the lower concave chamber (13) is used to be sealed by the upper surface (2) of the grinding pad; the interior of the chamber structure (1) is also provided with a cleaning hole (112) connecting the lower concave chamber (13) and the cleaning chamber (11), and a vacuum adsorption hole (122) connecting the lower concave chamber (13) and the vacuum adsorption chamber (12). 如請求項1的用於清洗研磨墊溝槽內廢棄物的腔室結構,其中該腔室結構(1)的側壁與該研磨墊上表面(2)之間的壓力為0.1psi-0.2psi。A chamber structure for cleaning waste in a polishing pad groove as claimed in claim 1, wherein the pressure between the side wall of the chamber structure (1) and the upper surface (2) of the polishing pad is 0.1psi-0.2psi. 如請求項1的用於清洗研磨墊溝槽內廢棄物的腔室結構,其中該清洗腔(11)的高度不小於11mm,且該下凹腔(13)與該清洗腔(11)對應的頂壁距離該研磨墊上表面(2)不小於4mm。A chamber structure for cleaning waste in a grinding pad groove as claimed in claim 1, wherein the height of the cleaning chamber (11) is not less than 11 mm, and the distance between the top wall of the lower concave chamber (13) and the cleaning chamber (11) corresponding to the top wall is not less than 4 mm from the upper surface (2) of the grinding pad. 如請求項1的用於清洗研磨墊溝槽內廢棄物的腔室結構,其中該真空吸附腔(12)的高度為10 mm-15 mm,且該下凹腔(13)與該真空吸附腔(12)對應的頂壁距離該研磨墊上表面(2)為1.5 mm-2.2 mm。A chamber structure for cleaning waste in a grinding pad groove as claimed in claim 1, wherein the height of the vacuum adsorption chamber (12) is 10 mm-15 mm, and the distance between the top wall of the lower concave chamber (13) and the vacuum adsorption chamber (12) corresponding to the top wall is 1.5 mm-2.2 mm from the upper surface (2) of the grinding pad. 如請求項4的用於清洗研磨墊溝槽內廢棄物的腔室結構,其中該真空吸附腔(12)的壓力值為-15psi--5psi。A chamber structure for cleaning waste in a grinding pad groove as claimed in claim 4, wherein the pressure value of the vacuum adsorption chamber (12) is -15psi to -5psi. 如請求項1的用於清洗研磨墊溝槽內廢棄物的腔室結構,其中該真空吸附腔(12)包括第一真空吸附腔(12a)和第二真空吸附腔(12b),該第一真空吸附腔(12a)和該第二真空吸附腔(12b)分別位於該清洗腔(11)的兩相對側。A chamber structure for cleaning waste in a grinding pad groove as claimed in claim 1, wherein the vacuum adsorption chamber (12) includes a first vacuum adsorption chamber (12a) and a second vacuum adsorption chamber (12b), and the first vacuum adsorption chamber (12a) and the second vacuum adsorption chamber (12b) are respectively located at two opposite sides of the cleaning chamber (11). 如請求項6的用於清洗研磨墊溝槽內廢棄物的腔室結構,其中該第一真空吸附腔(12a)對應的該真空吸附接口(121)開設於該腔室結構(1)的外側壁上,該第二真空吸附腔(12b)對應的該真空吸附接口(121)開設於該腔室結構(1)的頂壁上,該清洗腔接口(111)也開設於該腔室結構(1)的頂壁上。A chamber structure for cleaning waste in a grinding pad groove as described in claim 6, wherein the vacuum adsorption interface (121) corresponding to the first vacuum adsorption chamber (12a) is opened on the outer wall of the chamber structure (1), the vacuum adsorption interface (121) corresponding to the second vacuum adsorption chamber (12b) is opened on the top wall of the chamber structure (1), and the cleaning chamber interface (111) is also opened on the top wall of the chamber structure (1). 如請求項1-7中任一項的用於清洗研磨墊溝槽內廢棄物的腔室結構,其中該腔室結構(1)分為兩個相互獨立的子腔室結構(1),各該等子腔室結構(1)內均設有該清洗腔(11)、該清洗腔接口(111)、連通該下凹腔(13)和該清洗腔(11)的該清洗孔(112)、該真空吸附腔(12)、該真空吸附接口(121)、連通該下凹腔(13)和該真空吸附腔(12)的該真空吸附孔(122)。A chamber structure for cleaning waste in a grinding pad groove as claimed in any one of claims 1 to 7, wherein the chamber structure (1) is divided into two independent sub-chamber structures (1), each of the sub-chamber structures (1) is provided with the cleaning chamber (11), the cleaning chamber interface (111), the cleaning hole (112) connecting the lower concave chamber (13) and the cleaning chamber (11), the vacuum adsorption chamber (12), the vacuum adsorption interface (121), and the vacuum adsorption hole (122) connecting the lower concave chamber (13) and the vacuum adsorption chamber (12). 如請求項8的用於清洗研磨墊溝槽內廢棄物的腔室結構,其中該腔室結構(1)靠近該研磨墊上表面(2)中心的端壁側向延伸形成有擋板,該擋板用於引導在該腔室結構(1)外清洗該研磨墊上表面(2)的超潔淨水沿該腔室結構(1)縱長的側壁流向研磨墊的外緣。A chamber structure for cleaning waste in a grinding pad groove as in claim 8, wherein the end wall of the chamber structure (1) near the center of the upper surface (2) of the grinding pad is extended laterally to form a baffle, and the baffle is used to guide the ultra-clean water for cleaning the upper surface (2) of the grinding pad outside the chamber structure (1) to flow along the longitudinal side wall of the chamber structure (1) to the outer edge of the grinding pad. 如請求項8的用於清洗研磨墊溝槽內廢棄物的腔室結構,其中該清潔孔為長條孔且對著該研磨墊上表面(2)的溝槽,該長條孔的尺寸為5mm×2mm,該真空吸附孔(122)為圓孔,直徑為5mm-6mm。As in claim 8, a chamber structure for cleaning waste in a grinding pad groove, wherein the cleaning hole is a long hole facing the groove on the upper surface (2) of the grinding pad, the size of the long hole is 5mm×2mm, and the vacuum adsorption hole (122) is a circular hole with a diameter of 5mm-6mm. 一種清洗研磨墊溝槽內廢棄物的方法,包括以下步驟: 在研磨墊上放置如請求項1-10中任意一項的用於清洗研磨墊溝槽內廢棄物的腔室結構; 使用接通腔室結構(1)的清洗介質對研磨墊上表面(2)進行物理或物理化學清洗; 使用接通該腔室結構(1)的真空吸附裝置排出該研磨墊上表面(2)的廢棄物。 A method for cleaning waste in a grinding pad groove comprises the following steps: Placing a chamber structure for cleaning waste in a grinding pad groove as described in any one of claims 1 to 10 on the grinding pad; Using a cleaning medium connected to the chamber structure (1) to physically or physicochemically clean the upper surface (2) of the grinding pad; Using a vacuum adsorption device connected to the chamber structure (1) to discharge waste from the upper surface (2) of the grinding pad.
TW112132967A 2022-11-21 2023-08-31 Chamber structure and cleaning method for cleaning waste in a polishing pad groove TWI877758B (en)

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