CN116000816A - Chamber structure suitable for cleaning waste in groove of polishing pad and cleaning method - Google Patents
Chamber structure suitable for cleaning waste in groove of polishing pad and cleaning method Download PDFInfo
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Abstract
本申请公开了一种适于清洗研磨垫沟槽内废弃物的腔室结构及清洗方法,腔室结构的内部设有相互独立设置的清洗腔和真空吸附腔,腔室结构的外壁设有与清洗腔连通的清洗腔接口和与真空吸附腔连通的真空吸附接口,清洗腔接口适于连接清洗装置以供清洗介质进入清洗腔内,真空吸附接口适于连接真空吸附装置以便进入真空吸附腔内的带有废弃物的清洗介质被向外吸出,腔室结构的底部还设有下凹腔,下凹腔的底部开口适于被研磨垫上表面密封;腔室结构的内部还设有连通下凹腔和清洗腔的清洗孔、以及连通下凹腔和真空吸附腔的真空吸附孔。可将研磨垫上表面上的沟槽内的废弃物经分解清洗并吸附出研磨垫上表面。
The application discloses a chamber structure and cleaning method suitable for cleaning waste in the groove of the grinding pad. The interior of the chamber structure is provided with a cleaning chamber and a vacuum adsorption chamber which are independently arranged, and the outer wall of the chamber structure is provided with a The cleaning chamber interface connected with the cleaning chamber and the vacuum adsorption interface connected with the vacuum adsorption chamber, the cleaning chamber interface is suitable for connecting the cleaning device for the cleaning medium to enter the cleaning chamber, and the vacuum adsorption interface is suitable for connecting the vacuum adsorption device for entering the vacuum adsorption chamber The cleaning medium with waste is sucked out, the bottom of the chamber structure is also provided with a concave cavity, the bottom opening of the concave cavity is suitable for being sealed by the upper surface of the polishing pad; the interior of the chamber structure is also provided with a connected concave cavity The cleaning hole of the cavity and the cleaning cavity, and the vacuum suction hole connecting the lower concave cavity and the vacuum suction cavity. The waste in the groove on the upper surface of the grinding pad can be decomposed and cleaned and adsorbed from the upper surface of the grinding pad.
Description
技术领域technical field
本申请涉及晶圆研磨加工设备技术领域,具体涉及一种适于清洗研磨垫沟槽内废弃物的腔室结构及清洗方法。The present application relates to the technical field of wafer grinding and processing equipment, in particular to a chamber structure and cleaning method suitable for cleaning waste in a grinding pad groove.
背景技术Background technique
在基板抛光过程中,其主要的工艺步骤为:首选研磨头吸附基板并将基板放置于研磨垫上,然后通过研磨头对基板实行下压力,与此同时,研磨液通过输送系统供应到研磨垫上,研磨垫和研磨头同向但不同轴转动,研磨液随研磨垫的转动到达基板的下方,由于研磨垫和基板相对运动,使得研磨液里的颗粒物可对基板进行研磨抛光。In the process of substrate polishing, the main process steps are: firstly, the grinding head absorbs the substrate and places the substrate on the polishing pad, and then exerts downward pressure on the substrate through the grinding head. At the same time, the polishing liquid is supplied to the polishing pad through the conveying system. The grinding pad and the grinding head rotate in the same direction but not on the same axis, and the grinding liquid reaches the bottom of the substrate with the rotation of the grinding pad. Due to the relative movement of the grinding pad and the substrate, the particles in the grinding liquid can grind and polish the substrate.
在经过研磨后,基板表面可能会有缺陷出现,而在基板表面缺陷中,机械性损伤是较为常见的基板表面缺陷种类之一,也是一种较为严重的基板表面缺陷,这种缺陷一般产生于基板的化学机械抛光步骤或切片步骤。After grinding, there may be defects on the surface of the substrate, and among the surface defects of the substrate, mechanical damage is one of the more common types of surface defects of the substrate, and it is also a relatively serious surface defect of the substrate. A chemical mechanical polishing step or a dicing step for the substrate.
而在化学机械抛光中造成基板表面机械性损伤的主要原因之一是被研磨垫沟槽内的废弃物所划伤。因为研磨液是具有粘性的液体,在长时间的机械抛光工艺中,容易在研磨垫的沟槽内形成结晶体,而研磨垫的沟槽的宽度较小(约为0.7mm),不易对研磨垫的沟槽内的结晶废弃物进行有效清洗处理。One of the main causes of mechanical damage to the substrate surface during chemical mechanical polishing is scratches by waste in the groove of the polishing pad. Because the abrasive liquid is a viscous liquid, it is easy to form crystals in the groove of the polishing pad during the long-term mechanical polishing process, and the width of the groove of the polishing pad is small (about 0.7mm), which is not easy to damage the polishing pad. The crystalline waste in the ditch is effectively cleaned.
现有技术中,通过修整器对研磨垫进行工艺调整。其中,修整器的主要功能为:一、实现研磨液在研磨垫上的均匀分布;二、通过修整器调整研磨垫表面的粗糙度;三、通过修整器对研磨垫进行刷洗,清除研磨垫表面的沟槽内的晶体废弃物残留。In the prior art, the process adjustment of the polishing pad is performed by a dresser. Among them, the main functions of the dresser are: 1. to realize the uniform distribution of the abrasive liquid on the grinding pad; 2. to adjust the roughness of the surface of the grinding pad through the dresser; Crystal waste remains in the trench.
具体地,修整器的硬质圆盘的底面上带有凸点,修整器在研磨垫上做往复圆周运动,带凸点的硬质圆盘反复对研磨垫表面进行剐蹭从而对研磨垫表面粗糙度进行修正,并对存于研磨垫表面的废弃物及颗粒物进行清理。Specifically, the bottom surface of the hard disk of the dresser has convex points, and the dresser performs reciprocating circular motion on the polishing pad, and the hard disk with convex points scratches the surface of the polishing pad repeatedly so as to improve the surface roughness of the polishing pad. Make corrections and clean up any debris and particulates that have settled on the surface of the abrasive pad.
但是,由于修整器的硬质圆盘上的凸点无法完全契合研磨垫沟槽的形状,因此附着于研磨垫沟槽内的结晶废弃物无法得到充分的清理,而且由于研磨垫表面为多孔形态的粗糙面以及修整器的往复圆周运动过程中对颗粒废弃物所产生的下压力,也会造成研磨垫表面的颗粒废弃物被压入研磨垫表面的多孔缝隙中,不易被清理。However, since the bumps on the hard disc of the dresser cannot fully fit the shape of the groove of the polishing pad, the crystallization waste attached to the groove of the polishing pad cannot be fully cleaned, and because the surface of the polishing pad is porous The rough surface of the pad and the downward pressure on the granular waste during the reciprocating circular motion of the dresser will also cause the granular waste on the surface of the polishing pad to be pressed into the porous gaps on the surface of the polishing pad, which is not easy to be cleaned.
鉴于现有技术中研磨垫的沟槽内的废弃物无法有效清理的缺陷,有必要设计一种新的适于清洗研磨垫沟槽内废弃物的腔室结构。In view of the defect that the waste in the groove of the polishing pad cannot be effectively cleaned in the prior art, it is necessary to design a new chamber structure suitable for cleaning the waste in the groove of the polishing pad.
申请内容application content
因此,本申请要解决的技术问题在于克服现有技术中的研磨垫沟槽内的废弃物无法有效清理的缺陷,从而提供一种适于清洗研磨垫沟槽内废弃物的腔室结构及清洗方法。Therefore, the technical problem to be solved in this application is to overcome the defect that the waste in the grinding pad groove in the prior art cannot be cleaned effectively, thereby providing a chamber structure and cleaning method suitable for cleaning the waste in the grinding pad groove. method.
为解决上述技术问题,本申请的技术方案如下:In order to solve the problems of the technologies described above, the technical scheme of the present application is as follows:
一种适于清洗研磨垫沟槽内废弃物的腔室结构,所述腔室结构的内部设有相互独立设置的清洗腔和真空吸附腔,所述腔室结构的外壁设有与所述清洗腔连通的清洗腔接口和与所述真空吸附腔连通的真空吸附接口,所述清洗腔接口适于连接清洗装置以供清洗介质进入所述清洗腔内,所述真空吸附接口适于连接真空吸附装置以便所述真空吸附腔内的介质被向外吸出,所述腔室结构的底部还设有下凹腔,所述下凹腔的底部开口适于被研磨垫上表面密封;所述腔室结构的内部还设有连通所述下凹腔和所述清洗腔的清洗孔、以及连通所述下凹腔和所述真空吸附腔的真空吸附孔。A chamber structure suitable for cleaning the waste in the groove of the grinding pad, the inside of the chamber structure is provided with a cleaning chamber and a vacuum adsorption chamber independently arranged, and the outer wall of the chamber structure is provided with the cleaning chamber. The cleaning cavity interface connected with the vacuum adsorption cavity and the vacuum adsorption interface connected with the vacuum adsorption cavity, the cleaning cavity interface is suitable for connecting the cleaning device for the cleaning medium to enter the cleaning cavity, and the vacuum adsorption interface is suitable for connecting the vacuum adsorption device so that the medium in the vacuum adsorption chamber is sucked out, and the bottom of the chamber structure is also provided with a concave cavity, and the bottom opening of the concave cavity is suitable for being sealed by the upper surface of the polishing pad; the cavity structure There are also cleaning holes connecting the lower concave cavity and the cleaning cavity and vacuum suction holes connecting the lower concave cavity and the vacuum suction cavity inside.
进一步地,所述腔室结构的侧壁与所述研磨垫上表面之间的压力为0.1psi-0.2psi。Further, the pressure between the side wall of the chamber structure and the upper surface of the polishing pad is 0.1psi-0.2psi.
进一步地,所述清洗腔的高度不小于11mm,且所述下凹腔与所述清洗腔对应的顶壁距离所述研磨垫上表面不小于4mm。Further, the height of the cleaning chamber is not less than 11mm, and the distance between the top wall of the concave cavity and the cleaning chamber is not less than 4mm from the upper surface of the polishing pad.
进一步地,所述真空吸附腔的高度为10mm-15mm,且所述下凹腔与所述真空吸附腔对应的顶壁距离所述研磨垫上表面为1.5mm-2.2mm。Further, the height of the vacuum adsorption chamber is 10mm-15mm, and the distance between the top wall of the lower concave chamber and the vacuum adsorption chamber is 1.5mm-2.2mm from the upper surface of the polishing pad.
进一步地,所述真空吸附腔的压力值为-15psi--5psi。Further, the pressure value of the vacuum adsorption chamber is -15psi--5psi.
进一步地,所述真空吸附腔包括第一真空吸附腔和第二真空吸附腔,所述第一真空吸附腔和所述第二真空吸附腔分别位于所述清洗腔的两相对侧。Further, the vacuum adsorption chamber includes a first vacuum adsorption chamber and a second vacuum adsorption chamber, and the first vacuum adsorption chamber and the second vacuum adsorption chamber are respectively located on two opposite sides of the cleaning chamber.
进一步地,所述第一真空吸附腔对应的所述真空吸附接口开设于所述腔室结构的外侧壁上,所述第二真空吸附腔对应的所述真空吸附接口开设于所述腔室结构的顶壁上,所述清洗腔接口也开设于所述腔室结构的顶壁上。Further, the vacuum adsorption interface corresponding to the first vacuum adsorption chamber is opened on the outer wall of the chamber structure, and the vacuum adsorption interface corresponding to the second vacuum adsorption chamber is opened on the chamber structure The cleaning chamber interface is also opened on the top wall of the chamber structure.
进一步地,所述腔室结构分为两个相互独立的子腔室结构,各所述子腔室结构内均设有所述清洗腔、所述清洗腔接口、连通所述下凹腔和所述清洗腔的所述清洗孔、所述真空吸附腔、所述真空吸附接口、连通所述下凹腔和所述真空吸附腔的所述真空吸附孔。Further, the chamber structure is divided into two mutually independent sub-chamber structures, and each of the sub-chamber structures is provided with the cleaning chamber, the cleaning chamber interface, the lower concave cavity and the The cleaning hole of the cleaning chamber, the vacuum suction chamber, the vacuum suction interface, and the vacuum suction hole connecting the lower cavity and the vacuum suction chamber.
进一步地,所述腔室结构靠近所述研磨垫上表面中心的端壁侧向延伸形成有挡板,所述挡板适于引导在所述腔室结构外清洗所述研磨垫上表面的超洁净水沿所述腔室结构纵长的侧壁流向研磨垫的外缘。Further, the end wall of the chamber structure close to the center of the upper surface of the polishing pad is laterally extended to form a baffle, and the baffle is suitable for guiding the ultra-clean water for cleaning the upper surface of the polishing pad outside the chamber structure Flow along the lengthwise side walls of the chamber structure to the outer edge of the polishing pad.
进一步地,所述清洁孔为长条孔且对着所述研磨垫上表面的沟槽,所述长条孔的尺寸为5mm×2mm,所述真空吸附孔为圆孔,直径为5mm-6mm。Further, the cleaning hole is a long hole facing the groove on the upper surface of the polishing pad, the size of the long hole is 5mm×2mm, and the vacuum adsorption hole is a round hole with a diameter of 5mm-6mm.
本申请技术方案,具有如下优点:The technical solution of the present application has the following advantages:
1.本申请提供的适于清洗研磨垫沟槽内废弃物的腔室结构,自清洗接口接入的清洗介质从清洗孔冲出后,冲向沟槽内的废弃物,清洗介质的流动性特点,使得清洗介质可以无死角的对沟槽进行冲洗,进而将研磨垫上表面的沟槽内的废弃物冲击分解并与沟槽的内壁剥离,带有废弃物的清洗介质流动于下凹腔对应的研磨垫上表面,进而被真空吸附孔吸附后进入真空吸附腔并最终进入真空吸附装置,从而实现对沟槽内的废弃物的有效清理。1. The chamber structure provided by this application is suitable for cleaning the waste in the groove of the grinding pad. After the cleaning medium connected to the self-cleaning interface is flushed out from the cleaning hole, it rushes to the waste in the groove. The fluidity of the cleaning medium is Features, so that the cleaning medium can flush the groove without dead ends, and then impact and decompose the waste in the groove on the upper surface of the polishing pad and peel off the inner wall of the groove, and the cleaning medium with waste flows in the corresponding lower cavity The upper surface of the grinding pad is then absorbed by the vacuum adsorption hole and then enters the vacuum adsorption chamber and finally enters the vacuum adsorption device, so as to realize the effective cleaning of the waste in the groove.
2.本申请提供的适于清洗研磨垫沟槽内废弃物的腔室结构,腔室结构的侧壁与研磨垫上表面之间的压力为0.1psi-0.2psi,既可以保证研磨垫的正常转动,又能保证在腔室结构与研磨垫之间形成相对密闭的密封环境,以确保带有废弃物的清洗介质能够被快速真空吸附清理。2. The chamber structure provided by this application is suitable for cleaning waste in the groove of the polishing pad. The pressure between the side wall of the chamber structure and the upper surface of the polishing pad is 0.1psi-0.2psi, which can ensure the normal rotation of the polishing pad , and can ensure that a relatively airtight sealing environment is formed between the chamber structure and the polishing pad, so as to ensure that the cleaning medium with waste can be quickly cleaned by vacuum adsorption.
3.本申请提供的适于清洗研磨垫沟槽内废弃物的腔室结构,腔室结构的靠近研磨垫中心的端壁侧向延伸形成挡板,在用超洁净水在腔室结构外且在腔室结构所在侧冲洗研磨垫上表面时,超洁净水流向腔室结构的侧壁,并经挡板阻挡、引导后沿腔室结构的侧壁流向研磨垫的外缘,防止过多的超洁净水进入研磨垫的中心区域或靠近研磨头的区域、导致该区域内的研磨液被稀释、造成基板抛光效率低、无法满足其他工艺的基板制造要求。3. The chamber structure provided by the application is suitable for cleaning the waste in the groove of the polishing pad. The end wall of the chamber structure near the center of the polishing pad extends laterally to form a baffle, and the ultra-clean water is used outside the chamber structure and When flushing the upper surface of the polishing pad on the side where the chamber structure is located, the ultra-clean water flows to the side wall of the chamber structure, and after being blocked and guided by the baffle plate, flows along the side wall of the chamber structure to the outer edge of the polishing pad to prevent excessive ultra-clean water. Clean water enters the central area of the polishing pad or the area close to the polishing head, resulting in the dilution of the polishing liquid in this area, resulting in low substrate polishing efficiency, which cannot meet the substrate manufacturing requirements of other processes.
4.本申请提供的适于清洗研磨垫沟槽内废弃物的腔室结构,腔室结构分为两个相互独立的子腔室结构,可减小真空吸附腔的长度,以便让带有废弃物的清洗介质在较小的范围内流动,方便真空吸附孔吸附清理。4. The chamber structure suitable for cleaning the waste in the groove of the grinding pad provided by this application, the chamber structure is divided into two mutually independent sub-chamber structures, which can reduce the length of the vacuum adsorption chamber so that the waste with waste The cleaning medium of the object flows in a small range, which is convenient for the vacuum adsorption hole to absorb and clean.
一种清洗研磨垫沟槽内废弃物的方法,包括以下步骤:A method for cleaning waste in a grinding pad groove, comprising the following steps:
在研磨垫上放置前述的适于清洗研磨垫沟槽内废弃物的腔室结构;Place the aforementioned chamber structure suitable for cleaning waste in the groove of the grinding pad on the grinding pad;
采用接通腔室结构的清洗介质对研磨垫上表面进行物理化学清洗;The upper surface of the polishing pad is physically and chemically cleaned by using the cleaning medium connected to the chamber structure;
采用接通所述腔室结构的真空吸附装置排出所述研磨垫上表面的废弃物。The waste on the upper surface of the polishing pad is discharged by using a vacuum adsorption device connected to the chamber structure.
本申请技术方案,具有如下优点:The technical solution of the present application has the following advantages:
1.本申请中的清洗研磨垫沟槽内废弃物的方法,具有前述适于清洗研磨垫沟槽内废弃物的腔室结构的优点。1. The method for cleaning the waste in the groove of the grinding pad in the present application has the advantages of the aforementioned chamber structure suitable for cleaning the waste in the groove of the grinding pad.
附图说明Description of drawings
为了更清楚地说明本申请具体实施方式或现有技术中的技术方案,下面将对具体实施方式或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图是本申请的一些实施方式,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the specific embodiments of the present application or the technical solutions in the prior art, the following will briefly introduce the accompanying drawings that need to be used in the description of the specific embodiments or prior art. Obviously, the accompanying drawings in the following description The drawings are some implementations of the present application, and those skilled in the art can obtain other drawings based on these drawings without creative work.
图1为本申请的腔室结构在基板化学机械抛光系统中的位置示意图;1 is a schematic diagram of the position of the chamber structure of the present application in the substrate chemical mechanical polishing system;
图2为本申请的腔室结构与研磨垫滴定模块之间的位置关系图;Fig. 2 is the position relationship diagram between the chamber structure of the present application and the grinding pad titration module;
图3为本申请的腔室结构与超洁净水清洗模块在研磨垫上与研磨头的位置关系图;Fig. 3 is the chamber structure of the present application and the ultra-clean water cleaning module on the grinding pad and the positional relationship diagram of the grinding head;
图4为本申请的腔室结构在顺时针转动的研磨垫上的位置关系图;Fig. 4 is the position relationship diagram of the chamber structure of the present application on the grinding pad rotating clockwise;
图5为本申请的腔室结构的立体示意图;Fig. 5 is the three-dimensional schematic diagram of the chamber structure of the present application;
图6为本申请的腔室结构的局部立体示意图;FIG. 6 is a partial perspective view of the chamber structure of the present application;
图7为本申请的腔室结构的平面示意图;Fig. 7 is a schematic plan view of the chamber structure of the present application;
图8为本申请中的腔室结构连接的真空吸附装置的吸附原理图。Fig. 8 is an adsorption principle diagram of the vacuum adsorption device connected with the chamber structure in the present application.
附图标记说明:Explanation of reference signs:
1、腔室结构;1a、内侧子腔室;1b、外侧子腔室;11、清洗腔;111、清洗腔接口;112、清洗孔;12、真空吸附腔;12a、第一真空吸附腔;12b、第二真空吸附腔;121、真空吸附接口;122、真空吸附孔;13、下凹腔;14、挡板;2、研磨垫上表面;3、研磨头;4、修整器;5、研磨液滴定模块;6、超洁净水清洗模块;7、调压阀;8、过滤器。1. Chamber structure; 1a, inner subchamber; 1b, outer subchamber; 11, cleaning chamber; 111, cleaning chamber interface; 112, cleaning hole; 12, vacuum adsorption chamber; 12a, first vacuum adsorption chamber; 12b, second vacuum adsorption cavity; 121, vacuum adsorption interface; 122, vacuum adsorption hole; 13, lower concave cavity; 14, baffle plate; 2, upper surface of grinding pad; 3, grinding head; 4, dresser; 5, grinding Liquid titration module; 6. Ultra-clean water cleaning module; 7. Pressure regulating valve; 8. Filter.
具体实施方式Detailed ways
下面将结合附图对本申请的技术方案进行清楚、完整地描述,显然,所描述的实施例是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。The technical solutions of the present application will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.
在本申请的描述中,需要说明的是,术语“中心”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本申请和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本申请的限制。此外,术语“第一”、“第二”、“第三”仅用于描述目的,而不能理解为指示或暗示相对重要性。In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a specific orientation construction and operation, therefore should not be construed as limiting the application. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and should not be construed as indicating or implying relative importance.
在本申请的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通。对于本领域的普通技术人员而言,可以具体情况理解上述术语在本申请中的具体含义。In the description of this application, it should be noted that unless otherwise specified and limited, the terms "installation", "connection", and "connection" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connected, or integrally connected; it may be mechanically connected or electrically connected; it may be directly connected or indirectly connected through an intermediary, and it may be the internal communication of two components. Those of ordinary skill in the art can understand the specific meanings of the above terms in this application in specific situations.
此外,下面所描述的本申请不同实施方式中所涉及的技术特征只要彼此之间未构成冲突就可以相互结合。In addition, the technical features involved in the different embodiments of the present application described below may be combined as long as they do not constitute a conflict with each other.
实施例1Example 1
如图1至图8所示,本实施例提供一种适于清洗研磨垫沟槽内废弃物的腔室结构,用以对研磨垫上表面2的沟槽内的废弃物进行清洗。腔室结构1在基板化学机械抛光系统中与研磨垫上表面2、研磨头3、修整器4、研磨液滴定模块5、超洁净水清洗模块6之间的位置关系如图1至图3所示,在清洗研磨垫沟槽内废弃物过程中研磨垫转动,腔室结构1不动。As shown in FIG. 1 to FIG. 8 , this embodiment provides a chamber structure suitable for cleaning the waste in the groove of the polishing pad, for cleaning the waste in the groove of the
腔室结构1的尺寸与基板的尺寸相匹配,在本实施例中,腔室结构1的外观尺寸为270*40*19mm。腔室结构1的内部设有相互独立设置的清洗腔11和真空吸附腔12。The size of the
清洗腔11的长度为266mm,宽度为9mm,且清洗腔11的高度不少于11mm。在清洗腔11的底部开设有若干个清洗孔112,清洗孔112连通清洗腔11。清洗孔112为长条孔,清洗孔112呈一排设置,并等间距设置。清洗孔112的长度为5mm,宽为2mm,清洗腔11的底面距离研磨垫上表面2的距离不小于4mm,且各清洗孔112对应一至两个研磨垫上表面2上的沟槽(未图示),以有效地对沟槽内的废弃物进行冲击分解。The cleaning
真空吸附腔12包括位于清洗腔11两相对侧的第一真空吸附腔12a和第二真空吸附腔12b。第一真空吸附腔12a迎向超洁净水清洗模块6,第一真空吸附腔12a和第二真空吸附腔12b的尺寸相同,长度为266mm,宽度为12mm,高度10mm-15mm,优选地为13mm,真空吸附腔12的底面距离研磨垫上表面2的距离为2mm。第一真空吸附腔12a和第二真空吸附腔12b的底部均开设有相同数量的真空吸附孔122,真空吸附孔122连通真空吸附腔12。第一真空吸附腔12a和第二真空吸附腔12b对应的真空吸附孔122的数量均为32个,且32个真空吸附空呈一排等间距布置,真空吸附孔122为圆孔,圆形真空吸附孔122的直径为5mm-6mm,以便有效地吸附从研磨垫上表面2的沟槽内被清洗介质冲击分解出的废弃物。The
腔室结构1的外壁设有与清洗腔11连通的清洗腔接口111以及与真空吸附腔12连通的真空吸附接口121。The outer wall of the
清洗腔接口111适于连接清洗装置(未图示)以供清洗介质进入清洗腔11内。真空吸附接口121适于连接真空吸附装置(未图示)以便真空吸附腔12内的带有废弃物的清洗介质被向外吸出。在本实施例中,真空吸附装置为液态的真空发生器,液态真空发生器具有防腐效用,真空发生器的本体材质选用聚四氟乙烯。真空吸附接口121连接的真空吸附装置的吸附原理图如图8所示,真空吸附管路设计中通过使用调压阀7进行压力调整,以满足真空吸附所需的压力要求,并且在真空吸附管路中增加过滤器8,以对废弃物中的大颗粒物进行过滤,防止废弃物附着于管路内部造成管路和器件堵塞。The
第一真空吸附腔12a对应的真空吸附接口121开设于腔室结构1的侧壁上,之所以这样设计,一来,腔室结构1是与研磨液滴定模块5配合使用的,而研磨液滴定模块5的上部设有连杆机构(未图示),连杆机构在调整研磨液滴定模块5在研磨垫上的摆放位置时需要摆动,若第一真空吸附腔12a的真空吸附接口121设置在腔室结构1的顶壁的话,容易与连杆机构产生机械干涉和碰撞;二来,腔室结构1与研磨液滴定模块5配合连接,为了避免腔室结构1过大,从而导致腔室结构1和研磨液滴定模块5的总体重量比较大,进而影响研磨垫转动,腔室结构1的尺寸要小些才好,那么,在需要腔室结构1的尺寸较小的情况下,在腔室结构1的顶壁自然不易布置较多真空吸附接口121,避免增加真空吸附接口121的设置难度以及相互之间干扰。在本实施例中,第二真空吸附腔12b对应的真空吸附接口121有两个且开设于腔室结构1的顶壁上,当然,第二真空吸附腔12b对应的真空吸附接口121的数量也可以为其他数值,根据需要设置即可,清洗腔接口111有四个,且呈一排间隔设置,清洗腔接口111也开设于腔室结构1的顶壁上。The
腔室结构1的底部还设有下凹腔13,下凹腔13的顶壁由清洗腔11和真空吸附腔12的底壁连接形成,下凹腔13的底部开口适于被研磨垫上表面2密封,并且,腔室结构1的侧壁与研磨垫上表面2之间的压力为0.1psi-0.2psi,这样一来,既可以保证研磨垫的正常转动,又能保证在腔室结构与研磨垫之间形成相对密闭的密封环境,以确保带有废弃物的清洗介质能够被快速真空吸附清理。The bottom of the
腔室结构1的内部还设有连通下凹腔13和清洗腔11的清洗孔112、以及连通下凹腔13和真空吸附腔12的真空吸附孔122。自清洗腔接口111接入的清洗腔11的有压清洗介质的压力范围设定为5psi-21psi,以确保清洗介质能够对结晶废弃物进行有效的冲击分解。真空吸附腔12内的压力值为-15psi--5psi,以保证带有冲击分解后的废弃物的清洗介质被充分吸附清理。The interior of the
另外,在本实施例中,在图7视角下,腔室结构1被划分为两个相互独立的子腔室结构1,分别为内侧子腔室结构1a和外侧子腔室结构1b,各子腔室结构内均设有清洗腔11、清洗腔接口111、连通下凹腔13和清洗腔11的清洗孔112、真空吸附腔12、真空吸附接口121、连通下凹腔13和真空吸附腔12的真空吸附孔122,这样一来,第一真空吸附腔12a和第二真空吸附腔12b的长度均变短,可减小清洗介质的流动范围,方便真空吸附孔122对带有分解后的废弃物的清洗介质进行吸附清理。在本实施例中,第一真空吸附腔12a对应的真空吸附接口121有四个,当然也可以其他数值,根据需要设置即可,且,在第一真空吸附腔12a的中间部分,分隔腔室结构1的分隔板两侧的两相邻真空吸附接口121的间距较小,之所以这样设计,是因为研磨液在此区域内参与研磨的次数比较多,在研磨垫上形成的废弃物也就比较多,通过缩小在此区域内的相邻的两真空吸附接口121之间的间距,可以强化对此区域内的较多废弃物的充分吸附清理。In addition, in this embodiment, from the perspective of FIG. 7 , the
再者,在本实施例中,腔室结构1靠近研磨垫上表面2中心的端壁侧向延伸形成有挡板14,挡板14适于引导在腔室结构1外清洗研磨垫上表面2的超洁净水沿腔室结构1纵长的侧壁流向研磨垫的外缘,避免较多的超洁净水进入研磨垫的中心区域或靠近研磨头3的区域、导致该区域内的研磨液被稀释、造成基板抛光效率低、无法满足其他工艺的基板制造要求。Furthermore, in this embodiment, the end wall of the
下面介绍本实施例中的腔室结构1的工作过程:The working process of the
如图4所示,在需要清洗研磨垫时,研磨垫开始顺时针转动;As shown in Figure 4, when the grinding pad needs to be cleaned, the grinding pad starts to rotate clockwise;
清洗腔接口111接通并启动清洗装置,有压清洗介质自清洗装置、清洗腔接口111、清洗腔11和清洗孔112冲向研磨垫上表面2的沟槽,以物理方式冲击沟槽内的废弃物使其分解且自沟槽的内壁剥离,废弃物随清洗介质在研磨垫上表面2流动,在本实施例中,清洗介质为超洁净水,当然,也可以使用去离子水、活化剂和气态流体,其中,用有压活化剂来清洗时,则为物理化学方式清洗,活性剂的使用不局限于中和剂、表面活性剂、腐蚀抑制剂;The
与此同时,真空吸附接口121接通并启动真空吸附装置,使真空吸附腔12内为负压,负压范围为-15psi--5psi,保证流动于研磨垫上表面2的带有废弃物的清洗介质经由真空吸附孔122、真空吸附腔12和真空吸附装置被吸出腔室结构1,由于在清洗腔11的两侧分别设置有第一真空吸附腔12a和第二真空吸附腔12b,各自都具有真空吸附孔122,且第一真空吸附腔12a比第二真空吸附腔12b对应的真空吸附接口121的数量多余,第一真空吸附腔12a可先行对带有废弃物的清洗介质进行较好的先行吸附清理,而后,第二真空吸附腔12b再对带有废弃物的清洗介质进行二次吸附清理,另外,由于腔室结构1在纵长方向上划分为两个独立的子腔室,各子腔室均设有清洗腔11、清洗腔接口111、连通下凹腔13和清洗腔11的清洗孔112、真空吸附腔12、真空吸附接口121、连通下凹腔13和真空吸附腔12的真空吸附孔122,这样一来,第一真空吸附腔12a和第二真空吸附腔12b的长度均变短,带有废弃物的清洗介质流动在比较小的范围,方便真空吸附孔122对其进行充分有效的吸附清理。At the same time, the
另外,本实施例中,在研磨垫的转动方向上,由于腔室结构1设于超洁净水清洗模块6的前方,在用超洁净水冲洗研磨垫上表面2时,超洁净水流向腔室结构1的侧壁,并经挡板14阻挡、引导后沿腔室结构1的侧壁流向研磨垫的外缘,防止过多的超洁净水进入研磨垫的中心区域或靠近研磨头3的区域。In addition, in the present embodiment, on the rotational direction of grinding pad, because
综上,在本实施例中,自清洗接口接入的清洗介质从清洗孔冲出后,冲向沟槽内的废弃物,清洗介质的流动性特点,使得清洗介质可以无死角的对沟槽进行冲洗,进而将研磨垫上表面的沟槽内的废弃物冲击分解并与沟槽的内壁剥离,带有废弃物的清洗介质流动于下凹腔对应的研磨垫上表面,进而被真空吸附孔吸附后进入真空吸附腔并最终进入真空吸附装置,从而实现对沟槽内的废弃物的有效清理。To sum up, in this embodiment, after the cleaning medium connected to the self-cleaning interface is flushed out from the cleaning hole, it rushes to the waste in the groove. The fluidity of the cleaning medium allows the cleaning medium to clean the groove without dead ends. Flushing is performed, and then the waste in the groove on the upper surface of the polishing pad is impacted and decomposed and peeled off from the inner wall of the groove. The cleaning medium with waste flows on the upper surface of the polishing pad corresponding to the lower cavity, and is then absorbed by the vacuum adsorption hole. Enter the vacuum adsorption chamber and finally enter the vacuum adsorption device, so as to realize the effective cleaning of the waste in the trench.
实施例2Example 2
本实施例提供一种清洗研磨垫沟槽内废弃物的方法,包括以下步骤:This embodiment provides a method for cleaning waste in the groove of the polishing pad, comprising the following steps:
在研磨垫上放置前述的适于清洗研磨垫沟槽内废弃物的腔室结构;Place the aforementioned chamber structure suitable for cleaning waste in the groove of the grinding pad on the grinding pad;
采用接通腔室结构1的清洗介质对研磨垫上表面2进行物理或物理化学清洗;Using the cleaning medium connected to the
采用接通腔室结构1的真空吸附装置排出研磨垫上表面2的颗粒废弃物。The particulate waste on the
显然,上述实施例仅仅是为清楚地说明所作的举例,而并非对实施方式的限定。对于所属领域的普通技术人员来说,在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引伸出的显而易见的变化或变动仍处于本申请创造的保护范围之中。Apparently, the above-mentioned embodiments are only examples for clear description, rather than limiting the implementation. For those of ordinary skill in the art, other changes or changes in different forms can be made on the basis of the above description. It is not necessary and impossible to exhaustively list all the implementation manners here. However, the obvious changes or changes derived therefrom are still within the protection scope of the invention of the present application.
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Also Published As
| Publication number | Publication date |
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| TWI877758B (en) | 2025-03-21 |
| TW202426189A (en) | 2024-07-01 |
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