TWI876071B - Display method and substrate processing device - Google Patents
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Abstract
[課題] 提供減輕用來圖形化的處理的負荷。 [解決手段] 提供一種顯示方法,係顯示表示關於基板處理的資訊的複數參數,具有:取得以預先設定週期取樣的複數前述參數的測定值、及關於前述測定值的取樣時間的資訊的工程;基於關於前述測定值的取樣時間的資訊,抽出以取樣的順序在複數前述參數的測定值產生時間變化的測定值、或抽出產生前述時間變化的測定值及在其跟前取樣的測定值的工程;將抽出的複數前述參數的測定值與關於前述測定值的取樣時間的資訊綁定並記憶於記憶體部的工程;基於記憶於記憶體部的關於前述測定值的取樣時間的資訊,將複數前述參數的測定值描繪成圖形的描繪部;顯示描繪的前述圖形的工程。 [Topic] Provide a way to reduce the load of graphics processing. [Solution] A display method is provided for displaying a plurality of parameters representing information about substrate processing, comprising: a process of obtaining measured values of a plurality of the aforementioned parameters sampled at a preset period and information about the sampling time of the aforementioned measured values; a process of extracting measured values that produce time changes in the measured values of the plurality of the aforementioned parameters in a sampling order based on the information about the sampling time of the aforementioned measured values, or extracting measured values that produce the aforementioned time changes and measured values sampled before the measured values; a process of binding the extracted measured values of the plurality of the aforementioned parameters with the information about the sampling time of the aforementioned measured values and storing them in a memory unit; a drawing unit that depicts the measured values of the plurality of the aforementioned parameters as a graph based on the information about the sampling time of the aforementioned measured values stored in the memory unit; and a process of displaying the depicted graph.
Description
本揭示係有關於顯示方法及基板處理裝置。 This disclosure relates to a display method and a substrate processing device.
例如,專利文獻1提案了將藉由資料收集部收集到的資料暫時保存於資料緩衝器,以預定的週期從資料緩衝器叫出資料描繪圖形、及將此時的週期因應CPU的使用率進行設定。
For example,
例如,專利文獻2提案了在進行外部連接使用邏輯分析儀時,為了解消記錄LSI內部的狀態值時的記憶體容量不足等,在輸出連續的相同狀態值時,將該相同狀態值進行壓縮處理,使相同資料重複次數計數值及值不同的資料個數計數值重疊並記錄。
For example,
[專利文獻1] 特開2010-224974號公報 [Patent Document 1] Patent Publication No. 2010-224974
[專利文獻2] 特開2006-90727號公報 [Patent Document 2] Patent Publication No. 2006-90727
本揭示提供能夠減輕用來圖形化的處理的負荷的技術。 This disclosure provides a technique that can reduce the load of graphics processing.
根據本揭示的一態樣,提供一種顯示方法,係顯示表示關於基板處理的資訊的複數參數,具有:取得以預先設定週期取樣的複數前述參數的測定值、及關於前述測定值的取樣時間的資訊的工程;基於關於前述測定值的取樣時間的資訊,抽出以取樣的順序在複數前述參數的測定值產生時間變化的測定值、或抽出產生前述時間變化的測定值及在其跟前取樣的測定值的工程;將抽出的複數前述參數的測定值與關於前述測定值的取樣時間的資訊綁定並記憶於記憶體部的工程;基於記憶於記憶體部的關於前述測定值的取樣時間的資訊,將複數前述參數的測定值描繪成圖形的描繪部;顯示描繪的前述圖形的工程。 According to one aspect of the present disclosure, a display method is provided for displaying a plurality of parameters representing information about substrate processing, comprising: obtaining measured values of the plurality of parameters sampled at a preset period and information about the sampling time of the measured values; extracting measured values that have time variations in the measured values of the plurality of parameters in the sampling order based on the information about the sampling time of the measured values; Or a process of extracting the measured values that produce the aforementioned time variation and the measured values sampled before the measured values; a process of binding the extracted measured values of the aforementioned multiple parameters with the information about the sampling time of the aforementioned measured values and storing them in a memory unit; a drawing unit that draws the measured values of the aforementioned multiple parameters into a graph based on the information about the sampling time of the aforementioned measured values stored in the memory unit; a process of displaying the drawn graph.
根據一側面,能夠減輕用來圖形化的處理的負荷的技術。 On the one hand, it is a technology that can reduce the load of graphics processing.
1:腔室 1: Chamber
2:電漿 2: Plasma
3:上部電極 3: Upper electrode
4:下部電極 4: Lower electrode
5:靜電夾盤 5: Electrostatic chuck
6:RF電源 6:RF power supply
7:RF電源 7:RF power supply
8:氣體供應部 8: Gas supply department
9:排氣裝置 9: Exhaust device
10:基板處理裝置 10: Substrate processing device
20:控制部 20: Control Department
21:取得部 21: Acquisition Department
22:記憶部 22: Memory Department
23:製程執行部 23: Process Execution Department
24:資料處理部 24: Data Processing Department
25:描繪部 25: Drawing Department
26:描繪要求部 26:Description requirements section
27:顯示部 27: Display unit
ST:載置台 ST: loading platform
G:基板 G: Substrate
[圖1]表示一實施形態的基板處理裝置的一例的剖面示意圖。 [Figure 1] is a schematic cross-sectional view showing an example of a substrate processing device in an embodiment.
[圖2]表示一實施形態的控制部的功能構造的一例的圖。 [Figure 2] is a diagram showing an example of the functional structure of a control unit of an implementation form.
[圖3]表示一實施形態的資料檔案儲存部的一例的圖。 [Figure 3] is a diagram showing an example of a data file storage unit in an implementation form.
[圖4]表示一實施形態的控制部的硬體構造的一例的圖。 [Figure 4] is a diagram showing an example of the hardware structure of a control unit of an implementation form.
[圖5]表示一實施形態的測定值的收集處理的流程的一例的圖。 [Figure 5] is a diagram showing an example of the flow of collecting and processing measured values in one implementation form.
[圖6]表示從前的測定值的圖形化處理的流程的一例的圖。 [Figure 6] A diagram showing an example of the flow of conventional graphical processing of measured values.
[圖7]用來說明從前的測定值的圖形化處理及圖形顯示的圖。 [Figure 7] A diagram used to explain the graphical processing and graphical display of previous measurement values.
[圖8]表示一實施形態的測定值的圖形化處理的流程的一例的圖。 [Figure 8] is a diagram showing an example of the flow of graphical processing of measured values in one implementation form.
[圖9]用來說明一實施形態的測定值的圖形化處理及圖形顯示的圖。 [Figure 9] A diagram for illustrating graphical processing and graphical display of measured values in one embodiment.
以下,參照圖式說明關於用來實施本揭示的形態。在各圖式中,有於相同構成部分附加相同符號,將重複的說明省略的情形。 Below, the form used to implement the present disclosure is described with reference to the drawings. In each drawing, the same symbols are attached to the same components, and repeated descriptions are omitted.
首先,使用圖1說明關於一實施形態的基板處理裝置10。圖1為表示一實施形態的基板處理裝置10的一例的剖面示意圖。圖1表示藉由電容耦合電漿處理基板的處理裝置。
First, a
基板處理裝置10具有腔室1,腔室1內提供進行蝕刻處理及成膜處理的處理空間。基板處理裝置10中,在腔室1內的上部電極3與載置台ST之間的處理空間形成電漿,藉由電漿的作用處理基板G。載置台ST具有下部電極4及靜電夾盤5。載置台ST具有加熱器也可以下部電極4上保持有基板G。RF電源6與RF電源7耦合至下部電極4,能使用不同的RF頻率。上部電極3連接至接地電位。其他例中,RF電源6與RF電源7耦合至不同的電極也可以。於腔室1,經由氣體供應線11連接氣體供應部8,對處理空間供應處理氣體。於氣體供應線11連接流量控制器MFC。處理氣體藉由流量控制器MFC進行流量控制,對腔室1以預先設定的流量供應。腔室1的底部連接排氣裝置9,將腔室1內部排氣。
The
基板處理裝置10,具有包含處理器及各種記憶區域的控制部20,控制基板處理裝置10的各要素對基板G施予蝕刻等電漿處理。
The
在腔室1安裝壓力計CM。壓力計CM在處理基板G的期間,測定腔室1內的壓力。壓力計CM測定到的壓力測定值,發送至控制部20。
A pressure gauge CM is installed in the
流量控制器MFC在處理基板G的期間,控制在處理氣體中包含的各氣體的流量同時進行測定。流量控制器MFC測定到的氣體流量測定值,發送至控制部20。
The flow controller MFC controls and measures the flow rates of the gases contained in the processing gas while processing the substrate G. The gas flow rate measurement values measured by the flow controller MFC are sent to the
在載置台ST安裝溫度計T。溫度計T在處理基板G的期間,測定載置台ST的溫度。溫度計T測定到的溫度測定值,發送至控制部20。
A thermometer T is installed on the stage ST. The thermometer T measures the temperature of the stage ST during the processing of the substrate G. The temperature measurement value measured by the thermometer T is sent to the
壓力計CM、溫度計T、流量控制器MFC為測定處理基板G的期間的基板G的狀態、製程的狀態或腔室1的狀態等關於基板處理的資訊的機器的一例。此外,壓力測定值、溫度測定值、氣流量測定值為表示基板G的狀態、製程的狀態或腔室1的狀態的複數參數的一例,表示關於基板處理的資訊的複數參數的測定值不限於此。
The pressure gauge CM, the thermometer T, and the flow controller MFC are examples of machines for measuring information about substrate processing, such as the state of the substrate G, the state of the process, or the state of the
控制部20,將表示基板處理裝置10執行的基板處理的複數參數圖形化,執行顯示於控制部20具有的顯示器36(圖3參照)或能與控制部20通信的其他電腦的顯示方法。
The
接著,關於控制部20的功能構造的一例,參照圖2進行說明。圖2表示一實施形態的控制部20的功能構造的一例的圖。控制部20具有取得部21、記憶部22、製程執行部23、資料處理部24、描繪部25、描繪要求部26及顯示部27。
Next, an example of the functional structure of the
取得部21取得以預先設定週期取樣的複數參
數的測定值、及關於前述測定值的取樣時間的資訊。關於測定值的取樣時間的資訊,可以是測定值的取樣編號、也可以是取樣時間本身。在本實施形態中,與取得取樣編號的情形為例進行說明。
The
取樣編號在每個週期以升序附加編號。藉此,藉由將在每個週期測定到的測定值與取樣編號綁定並記憶於記憶部22,能夠算出測定值的取樣時間。例如,週期設為T、取樣編號設為n(n為1個以上的整數)時,將取樣開始的時點作為起點的各測定值的取樣時間t藉由式(1)算出。
The sampling number is numbered in ascending order in each cycle. Thus, by binding the measured value measured in each cycle with the sampling number and storing it in the
t=T×(n-1)...(1) t=T×(n-1). . . (1)
例如,週期T為100msec,在每個週期取樣全參數的全資料時,各測定值的取樣時間成為t=100(msec)×(n-1),基於取樣編號n,能夠算出取樣時間t。例如,n=11的情形,成為從取樣開始經過1秒(100msec×10)後被取樣的資料。 For example, if the cycle T is 100msec, and all data of all parameters are sampled in each cycle, the sampling time of each measured value becomes t=100(msec)×(n-1), and the sampling time t can be calculated based on the sampling number n. For example, in the case of n=11, the data is sampled 1 second (100msec×10) after the sampling starts.
又,將n設為0以上的整數、將取樣開始的時點設為n=0時,取樣時間t能夠藉由式(1’)算出。 Furthermore, when n is set to an integer greater than 0 and the sampling start time is set to n=0, the sampling time t can be calculated by formula (1').
t=T×n...(1’) t=T×n. . . (1’)
資料處理部24基於式(1)或式(1’),將各測定值的取樣時間,藉由基於取樣編號n的整數與週期T的積算出。
The
此外,僅著目於取樣間的相對時間的情形,即便是將n設為1個以上的整數、將取樣開始的時點設為 n=1的情形,雖能適用上述式(1’),但該情形中,對應各個n的取樣時間的數值本身不再單獨具有意義。 In addition, if we only focus on the relative time between samples, even if n is set to an integer greater than 1 and the sampling start time is set to n=1, the above formula (1') can be applied. However, in this case, the numerical value of the sampling time corresponding to each n no longer has a separate meaning.
將取得到的複數參數的測定值,在每個參數與關於測定值的取樣時間有關的資訊綁定並儲存於記憶體部22的資料儲存部28。在資料儲存部28,記憶複數監視資料檔案128a、128b。
The measured values of the obtained multiple parameters are bound to the information related to the sampling time of each parameter and stored in the
圖3為表示一實施形態的記憶於資料儲存部28的測定值的一例的圖。例如,在儲存於資料儲存部28的監視資料檔案128a中,記憶有取樣編號1(n=1)的全參數(壓力測定值、氣流量測定值、溫度測定值...)。於監視資料檔案128b中,記憶有取樣編號2(n=2)的全參數。於監視資料檔案128c中,記憶有取樣編號3(n=3)的全參數。
FIG3 is a diagram showing an example of measured values stored in the
如此監視資料檔案128a、128b...,在每個取樣編號設置,關於複數參數,將各參數的測定值綁定至取樣編號並記憶。圖3中,僅示出3個參數,但參數之數不限於3個,是2個以上也可以。此外,也將監視資料檔案128a、128b...總稱為監視資料檔案128。
In this way, monitoring
製程執行部23對基板G執行所期望的處理。資料處理部24,基於在每個測定值綁定的取樣編號,進行用來複數參數的測定值的圖形化的資料處理(圖形化處理的一部分)。具體上,資料處理部24,將複數參數的每個參數的測定值依取樣編號的順序進行探索,抽出產生時間變化的測定值。但是,資料處理部24,將複數參數的每個參數的測定值依取樣編號的順序進行探索,抽出產生時間
變化的測定值與其跟前的測定值也可以。如同以上藉由訂定的預定的規則抽出的測定值,記憶於記憶部22的暫時記憶區域即記憶體部29。於記憶體部29,與抽出的測定值綁定記憶關於前述測定值的取樣時間的資訊。
The
描繪部25,基於從記憶於記憶體部29的取樣編號算出的取樣時間,將對應的測定值在每個參數描繪成圖形。顯示部27,顯示描繪複數參數的測定值的時間變化的圖形。
The
本實施形態中,控制部20將取樣的測定值的全部先蓄積於監視資料檔案128。接著,將從圖形的描繪時儲存於監視資料檔案128的複數參數的測定值基於上述預定的規則抽出的複數參數的測定值與關於該抽出的測定值的取樣時間的資訊綁定並記憶於記憶體部29。
In this embodiment, the
不過,測定值的記憶方法不限此,例如,從取樣的測定值將資料處理部24抽出的測定值直接記憶於記憶體部29也可以。此時,能夠省略將取樣的測定值的全部先記憶於監視資料檔案128的處理。藉此,能夠減輕處理的負荷,同時能夠減輕記憶取樣的測定值的記憶體的使用量。
However, the method of storing the measured values is not limited to this. For example, the measured values extracted by the
資料處理部24,因應圖形的描繪要求,從取樣的測定值基於上述預定的規則進行複數參數的測定值的抽出,描繪部25,將因應其抽出的複數參數的測定值的時間變化描繪成圖形也可以。描繪要求部26,因應圖形的描繪要求為可的畫面(描繪要求畫面)的顯示,輸出指示開始
抽出測定值的工程的指示信號也可以。描繪要求部26,因應對描繪要求畫面的圖形的描繪要求的操作,輸出指示開始描繪處理(圖形化處理的一部分)的指示信號也可以。
The
接著,關於控制部20的硬體構造的一例,參照圖4進行說明。圖4為表示一實施形態的控制部20的硬體構造的一例的圖。控制部20具有介面31、補助記憶裝置32、主記憶體33、CPU34、鍵盤35及顯示器36。
Next, an example of the hardware structure of the
介面31為與壓力計CM等的測定部的介面。藉此,控制部20,經由介面31取得以預先設定的週期取樣的複數參數的測定值。
The
補助記憶裝置32,為將取樣的複數參數的測定值與該測定值的取樣編號綁定並儲存的非揮發性的記憶裝置。主記憶體33,為從取樣的複數參數的測定值將基於上述預定的規則抽出的測定值與該測定值的取樣編號綁定並暫時保持的揮發性的半導體記憶體。
The
CPU34,基於記憶於補助記憶裝置32及主記憶體33的測定值及該測定值的取樣編號執行圖形化處理(資料處理及描繪處理等)。
鍵盤35為輸入裝置的一例,輸入預定的操作。顯示器36為顯示裝置的一例,顯示圖形化的複數參數的測定值的時間變化。取代鍵盤35將觸控面板作為輸入裝置也可以。
The
圖2描繪了著目於控制部20的功能的方塊圖,例如,製程執行部23、資料處理部24、描繪部25的功能,能藉由使CPU34執行的基板處理、資料處理、描繪處理實現。
FIG2 depicts a block diagram focusing on the functions of the
記憶部22的功能,能藉由補助記憶裝置32及主記憶體33實現。顯示部27的功能,能藉由顯示器36實現。取得部21的功能,能藉由介面31實現。描繪要求部26的功能,能藉由鍵盤35實現。
The function of the
接著,有關控制部20執行的測定值的收集處理,參照圖5進行說明。圖5為表示一實施形態的測定值的收集處理的流程的一例的圖。
Next, the collection and processing of the measured values executed by the
本收集處理,為在製程執行部23執行基板處理的期間,例如在每100msec週期取得複數參數的全部測定值,記憶於監視資料檔案128的處理。
This collection process is to obtain all measured values of multiple parameters during the
開始基板處理後,取得部21,以預先設定的週期將複數參數的測定值取樣,取得複數參數的取樣編號與測定值(步驟S1)。接著,取得部21,將取得的每個參數的取樣編號與測定值記憶於資料儲存部28的監視資料檔案128(步驟S2)。
After the substrate processing starts, the
接著,取得部21,判定製程(基板處理)是否結束(步驟S3)。到製程結束為止,重複執行步驟S1~S3,將取樣的每個參數的取樣編號與測定值蓄積於監視資料檔
案128。製程結束後,判定接下來的製程是否開始(步驟S4),到接下來的製程開始為止等待。開始接下來的製程時,執行接下來的製程的期間,取得部21,再取得取樣的複數參數的取樣編號與測定值並蓄積於監視資料檔案128。
Next, the
接著,關於從前的測定值的圖形化處理,參照圖6及圖7進行說明。圖6為表示從前的測定值的圖形化處理的流程的一例的圖。圖7為用來說明從前的測定值的圖形化處理及圖形顯示的圖。此外,從前的圖形化處理中,在監視資料檔案128依取樣的順序蓄積測定值,測定值的取樣時間不使用取樣編號取得時,不將取樣編號綁定測定值並記憶也可以。 Next, the graphical processing of the previous measured values is explained with reference to FIG6 and FIG7. FIG6 is a diagram showing an example of the flow of the graphical processing of the previous measured values. FIG7 is a diagram for explaining the graphical processing and graphical display of the previous measured values. In addition, in the previous graphical processing, when the monitoring data file 128 accumulates the measured values in the order of sampling and the sampling time of the measured values is not obtained using the sampling number, it is also possible not to bind the sampling number to the measured value and store it.
圖6的從前的圖形化處理中,首先,判定是否遷移至描繪要求畫面(步驟S11)。如此顯示描繪要求畫面時,判定遷移至描繪要求畫面,將儲存於監視資料檔案128的複數參數的測定值在記憶體部29以該形式記憶(步驟S12)。
In the previous graphical processing of FIG. 6, first, it is determined whether to migrate to the drawing request screen (step S11). When the drawing request screen is displayed in this way, it is determined to migrate to the drawing request screen, and the measured values of the multiple parameters stored in the monitoring data file 128 are stored in the
例如,如圖7所示,在顯示器36顯示描繪要求畫面136後,將儲存於圖7(a)所示的監視資料檔案128的各參數(A:壓力測定值、B:氣流量測定值、C:溫度測定值)在記憶體部29以該形式記憶。也就是說,記憶於記憶體部29的資料,與儲存於監視資料檔案128的各參數的
測定值相同。
For example, as shown in FIG7, after the
接著,判定是否有描繪要求(步驟S13)。例如操作者未按壓圖7所示的描繪要求畫面136的「Yes」的按鍵136a(步驟S13「No」),經過預先設定的時間時(步驟S14),結束本處理。預定時間經過前若按壓描繪要求畫面136的「Yes」的按鍵136a,則判定有描繪要求。此外,不設步驟S14,以到按壓按鍵136a為止持續等待狀態的方式,在步驟S13為「No」的時回到步驟S13之前也可以。
Next, determine whether there is a drawing request (step S13). For example, if the operator does not press the "Yes"
此時,因應描繪要求,將在記憶體部29內記憶的複數參數的各參數的測定值,以記憶的順序標記並圖形化(步驟S15),顯示複數參數的圖形(步驟S16),結束處理。藉此,如圖7(b)所示,將在記憶體部29記憶的複數參數的測定值的時間變化作為圖形顯示,能夠確認基板處理狀態。
At this time, in response to the drawing request, the measured values of each parameter of the multiple parameters stored in the
在從前的圖形化處理中,在記憶體部29記憶的測定值,與在監視資料檔案128儲存的各參數的測定值相同,將取樣的測定值的全部標記成圖形。因此,依取樣的順序標記,圖形化處理的負荷高,圖形化花費時間。特別是近年來參數之數膨大,圖形化處理的負荷變得更高。
In the previous graphics processing, the measured values stored in the
又,從前的圖形化處理中,因為使在監視資料檔案128內蓄積的複數參數的測定值維持原狀記憶於記憶體部29,記憶體的使用量大。特別是近年來參數之數膨大,記憶體的使用量變得更高。記憶體,因為不只是圖形的描繪也使用於其他處理,因圖形化處理而記憶體的使用
量變大則也會對其他處理造成影響。
In addition, in the previous graphic processing, the measured values of multiple parameters stored in the monitoring data file 128 were stored in the
如同以上,為了圖形化使用的CPU34及主記憶體33的消耗變多。又,因為在圖形化處理持續CPU34的負荷高的狀況,到畫面顯示圖形為止花費的時間也變長,導致服務的降低。
As mentioned above, the
在此,本實施形態的圖形化處理中,降低為了顯示複數參數的圖形使用的CPU34及主記憶體33的消耗,縮短了到在畫面顯示圖形為止的時間。此外,表示本實施形態的顯示方法的圖形化處理,包含圖5所示的收集處理、及圖8所示的圖形化處理(資料處理、描繪處理等)。
Here, in the graphics processing of this embodiment, the consumption of
接著,關於本實施形態的測定值的圖形化處理,參照圖8及圖9進行說明。圖8為表示一實施形態的測定值的圖形化處理的流程的一例的圖。圖9為用來說明一實施形態的測定值的圖形化處理及圖形顯示的圖。 Next, the graphical processing of the measured values of this embodiment will be described with reference to FIG8 and FIG9. FIG8 is a diagram showing an example of the flow of the graphical processing of the measured values of an embodiment. FIG9 is a diagram for explaining the graphical processing and graphical display of the measured values of an embodiment.
本處理,首先,判定描繪要求部26是否遷移至描繪要求畫面(步驟S21)。描繪要求部26,判定遷移至描繪要求畫面,資料處理部24,就在監視資料檔案128儲存的複數參數在每個參數基於上述預定的規則抽出測定值的變化點。資料處理部24,將抽出的變化點的測定值與取樣編號綁定並記憶於記憶體部29(步驟S22)。但是,資料處理部24,將抽出的變化點的測定值及在前述測定值的跟
前取樣的測定值與取樣編號綁定並記憶於記憶體部29也可以。
In this process, first, it is determined whether the
例如,如圖9所示,在顯示器36顯示描繪要求畫面136後,描繪要求部26輸出指示開始抽出測定值的處理的指示信號。資料處理部24,接收指示開始抽出測定值的處理的指示信號後,從圖9(a)所示的監視資料檔案128中儲存的各參數(A:壓力測定值、B:氣流量測定值、C:溫度測定值...)抽出測定值的變化點。接著,資料處理部24,將抽出的變化點的測定值與取樣編號綁定並記憶於記憶體部29。此外,以複數週期構成的取樣期間的最初的測定值與最後的測定值無條件記憶於記憶體部29。藉此,例如,A的壓力測定值中,抽出取樣編號為1、3、6的變化點。接著,將抽出的變化點的測定值「7」、「10」、「11」與取樣編號「1」、「3」、「6」綁定並記憶於記憶體部29。此外,本實施形態中,關於抽出的變化點跟前的取樣編號「2」、「5」的測定值「7」、「10」也與取樣編號「2」、「5」綁定並記憶於記憶體部29。關於B的氣流量測定值及C的溫度測定值也同樣進行測定值的抽出。
For example, as shown in FIG9 , after the
其結果,如圖9(b)所示,取樣編號「4」的壓力測定值及溫度測定值被實質丟棄,未記憶於記憶體部29。因此,記憶於記憶體部29的資料,比儲存於監視資料檔案128的各參數的測定值還少,能夠降低記憶體部29的使用量。
As a result, as shown in FIG9(b), the pressure measurement value and temperature measurement value of the sampling number "4" are substantially discarded and not stored in the
接著,描繪要求部26,判定是否有描繪要求(步驟S23)。例如操作者未按壓圖9所示的描繪要求畫面136的「Yes」的按鍵136a(步驟S23「No」),經過預先設定的時間時(步驟S24),結束本處理。預定時間經過前若按壓描繪要求畫面136的「Yes」的按鍵136a,描繪要求部26則判定有描繪要求,輸出指示開始抽出的測定值的描繪處理的指示信號。此外,不設步驟S24,以到按壓按鍵136a為止持續等待狀態的方式,在步驟S23為「No」的時回到步驟S23之前也可以。
Next, the
描繪部25,接收到指示開始描繪處理的指示信號後,將資料處理部24抽出的測定值,因應基於式(1)或式(1’)從取樣編號算出的取樣時間標記、並圖形化(步驟S25)。顯示部27,顯示複數參數的測定值的圖形(步驟S26),結束處理。因應從例如綁定於圖9(b)的記憶體部29內的測定值的取樣編號算出的取樣時間在每個參數標記測定值,將各參數的測定值的時間變化圖形化並顯示。藉此,如圖9(c)所示,將在記憶體部29記憶的複數參數的測定值作為圖形顯示,能夠確認基板處理狀態。圖9(c)所示的圖形,成為與圖7(c)所示的從前例的圖形相同的表示。
After receiving the instruction signal for instructing the start of the drawing process, the
如同以上說明那樣,本實施形態的測定值的圖形化處理中,將在監視資料檔案128蓄積的各參數的測定值的變化點抽出,將變化點的測定值記憶於記憶體部29。或將在監視資料檔案128蓄積的各參數的測定值的變化點抽出,將變化點的測定值及在其跟前取樣的測定值記
憶於記憶體部29。
As described above, in the graphical processing of the measured values of this embodiment, the change point of the measured values of each parameter accumulated in the monitoring data file 128 is extracted, and the measured value of the change point is stored in the
藉此,在測定值未變化的期間,該期間的測定值能夠作為於圖形化不需要的資料而不記憶於記憶體部29並丟棄。也就是說,取樣的測定值為相同值持續的期間,因為在圖形上作為水平的直線顯示,變化點的測定值以外的測定值或變化點的測定值及其跟前的測定值以外的測定值成為圖形化不需要的資料。在此,本實施形態中,因為不將判定成不需要的資料的測定值記憶於記憶體部29,減少了用以圖形化的測定值。藉此,能夠降低用以圖形化的記憶體使用量。
Thus, during the period when the measured value does not change, the measured value of that period can be treated as data not needed for graphics and not stored in the
又,與從前相比因為在記憶體部29記憶的測定值減少,描繪成圖形的測定值的點數減少,能夠降低進行用以圖形化的處理的CPU34的負荷,能夠縮短描繪圖形並顯示的時間。又,為了算出取樣測定值的時間,綁定於測定值將取樣編號記憶於記憶體部29。藉此,例如,能夠算出在記憶體部29記憶的測定部的取樣時間,能夠將測定值因應取樣時間標記,將測定值的時間變化圖形化。
Furthermore, since the number of measured values stored in the
此外,變化點的測定值的跟前的測定值記憶也可以、不記憶也可以。與變化點的測定值一同將其跟前的測定值記憶於記憶體部29時,藉由將標記的鄰接的測定值彼此以直線連結的圖形化規則圖形化也可以。
In addition, the measured value before the measured value of the change point may be stored or not stored. When the measured value before the change point is stored in the
僅將變化點的測定值記憶於記憶體部29的情形,不將標記的鄰接的測定值彼此以直線連結,而從到下個變化點的測定值為止跟前的變化點的測定值拉出水平直
線,使用在下個變化點的測定值測定值階段增減的圖形化規則也可以。但是,圖形化規則不限於此,能夠使用其他規則。
In the case where only the measured value of the change point is stored in the
根據以上說明的本實施形態的顯示方法,能夠將在記憶體部29記憶的測定值壓縮。藉此,在測定值的圖形化中能夠減少標記的點數,能夠減輕用以圖形化的處理的負荷,能夠縮短到圖形化為止的時間。
According to the display method of the present embodiment described above, the measured values stored in the
又,因為使在監視資料檔案128內蓄積的複數參數的測定值壓縮並記憶於記憶體部29,能夠減少記憶體的使用量。
Furthermore, since the measured values of multiple parameters stored in the monitoring data file 128 are compressed and stored in the
此外,本實施形態中,在監視資料檔案128,記憶全參數的被取樣的全測定值,在記憶體部29記憶變化點抽出後的各參數的測定值。但是,將變化點抽出後的各參數的測定值記憶於監視資料檔案128,接收指示開始抽出測定值的工程的指示信號後,將在監視資料檔案128記憶的變化點抽出後的各參數的測定值圖形化並顯示也可以。或藉由在記憶體部29記憶的測定值將監視資料檔案128的資料更新也可以。藉此,能夠將取樣的測定值壓縮記憶,降低儲存監視資料檔案128的資料儲存部28的使用量。
In the present embodiment, the sampled total measured values of all parameters are stored in the monitoring data file 128, and the measured values of each parameter after the change point is extracted are stored in the
應考慮本次揭示的本實施形態的顯示方法及基板處理裝置,於所有的點都是例示並非限制。實施形態,在不脫離申請專利範圍及其主旨的情況下,也能夠以各種形態進行變形及改良。上述複數實施形態記載的事 項,在不矛盾的範圍內也能夠取得其他構造,又在不矛盾的範圍內也能夠組合。 It should be considered that the display method and substrate processing device of the present embodiment disclosed this time are illustrative and non-limiting in all aspects. The embodiment can be deformed and improved in various forms without departing from the scope of the patent application and its main purpose. The matters recorded in the above multiple embodiments can also obtain other structures within the scope of non-contradiction, and can also be combined within the scope of non-contradiction.
本揭示的基板處理裝置無論是Atomic Layer Deposition(ALD)裝置、Capacitively Coupled Plasma(CCP)、Inductively Coupled Plasma(ICP)、Radial Line Slot Antenna(RLSA)、Electron Cyclotron Resonance Plasma(ECR)、Helicon Wave Plasma(HWP)的任何態樣的裝置都能適用。 The substrate processing device disclosed herein can be applied to any type of device, including Atomic Layer Deposition (ALD) device, Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial Line Slot Antenna (RLSA), Electron Cyclotron Resonance Plasma (ECR), and Helicon Wave Plasma (HWP).
又,作為基板處理裝置的一例舉電漿處理裝置進行說明,但基板處理裝置,為在基板施予預定處理(例如,成膜處理、蝕刻處理等)的裝置即可,不限於電漿處理裝置。 Furthermore, a plasma processing device is used as an example of a substrate processing device for explanation, but a substrate processing device is any device that performs a predetermined process (e.g., film forming process, etching process, etc.) on a substrate and is not limited to a plasma processing device.
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