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TWI874249B - Method for fabricating electronic package - Google Patents

Method for fabricating electronic package Download PDF

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Publication number
TWI874249B
TWI874249B TW113122700A TW113122700A TWI874249B TW I874249 B TWI874249 B TW I874249B TW 113122700 A TW113122700 A TW 113122700A TW 113122700 A TW113122700 A TW 113122700A TW I874249 B TWI874249 B TW I874249B
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substrate
manufacturing
electronic
electronic package
package
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TW113122700A
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TW202601805A (en
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張云銘
林志生
施智元
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矽品精密工業股份有限公司
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Abstract

A method for manufacturing electronic packages, including: providing a first substrate, arranging electronic components on the first substrate, bonding a second substrate to the first substrate, and forming an encapsulation layer between the first substrate and the second substrate. When the first substrate is a core-less-layer substrate, before the electronic component is disposed on the first substrate, a heating process is performed on the first substrate to release stress. When the second substrate is a core-less-layer substrate, a heating process is performed on the second substrate before the second substrate is bonded to the first substrate to release stress.

Description

電子封裝件之製法 Method for manufacturing electronic packaging components

本發明係有關一種半導體封裝技術,尤指一種電子封裝件之製法。 The present invention relates to a semiconductor packaging technology, in particular to a method for manufacturing electronic packaging components.

隨著半導體封裝技術的演進,半導體裝置(Semiconductor device)已開發出不同的封裝型態,其中,為提升電性功能及節省封裝空間,業界遂發展出堆疊複數封裝結構以形成封裝堆疊結構(Package on Package,簡稱POP)之封裝型態,此種封裝型態能發揮系統封裝(SiP)異質整合特性,可將不同功用之電子元件,例如:記憶體、中央處理器、繪圖處理器、影像應用處理器等,藉由堆疊設計達到系統的整合,而適用於各種輕薄短小型電子產品。 With the evolution of semiconductor packaging technology, semiconductor devices have developed different packaging types. In order to improve electrical performance and save packaging space, the industry has developed a packaging type that stacks multiple package structures to form a package stacking structure (Package on Package, referred to as POP). This packaging type can give play to the heterogeneous integration characteristics of the system package (SiP). Electronic components with different functions, such as memory, central processing unit, graphics processor, image application processor, etc., can be integrated into the system through stacking design, and are suitable for various thin and short electronic products.

圖1係為習知封裝堆疊結構1之剖面示意圖,該封裝堆疊結構1係包含有第一半導體晶片10、第一封裝基板11、第二封裝基板12、複數銲球13、第二半導體晶片14以及封裝膠體15。該第一封裝基板11具有複數線路層111,且該第二封裝基板12具複數線路層121。該第一半導體晶片10以覆晶方式設於該第一封裝基板11上,且該第二半導體晶片14亦以覆晶方式設於該第二封裝基板12上。該些銲球13係用以連結且電性耦接該第一封裝基板11與該第二封裝基板12。該封裝膠體15係包覆該些銲球13與該第一半導體晶片10。另外,可選擇性地形成底膠16於該第一半導體晶片10與該第一封裝基板11之 間。 FIG. 1 is a cross-sectional schematic diagram of a conventional package stacking structure 1, which includes a first semiconductor chip 10, a first package substrate 11, a second package substrate 12, a plurality of solder balls 13, a second semiconductor chip 14, and a packaging resin 15. The first package substrate 11 has a plurality of circuit layers 111, and the second package substrate 12 has a plurality of circuit layers 121. The first semiconductor chip 10 is disposed on the first package substrate 11 in a flip-chip manner, and the second semiconductor chip 14 is also disposed on the second package substrate 12 in a flip-chip manner. The solder balls 13 are used to connect and electrically couple the first package substrate 11 and the second package substrate 12. The packaging resin 15 covers the solder balls 13 and the first semiconductor chip 10. In addition, a primer 16 may be selectively formed between the first semiconductor chip 10 and the first packaging substrate 11.

由於第一基板(無核心層基板)在製作過程中受到外力或者熱製程的影響導致有殘留應力的累積,此殘留應力若在封裝過程中未消除的話,會影響到封裝後的最終封裝堆疊結構翹曲的形貌(笑臉或哭臉),亦即封裝堆疊結構邊緣會發生上翹或下彎問題。 Since the first substrate (substrate without core layer) is affected by external force or thermal process during the manufacturing process, residual stress is accumulated. If this residual stress is not eliminated during the packaging process, it will affect the final package stacking structure after packaging. The shape of the warp (smiley face or crying face), that is, the edge of the package stacking structure will bend upward or downward.

再者,此最終封裝堆疊結構的形貌需符合後續接置之印刷電路板(PCB)的形貌,如與印刷電路板的形貌不匹配,則會於最終封裝堆疊結構接置上發生銲球未濕潤(solder ball non-wetting)的狀況,甚至導致消費性產品可靠度問題。 Furthermore, the morphology of the final package stacking structure must conform to the morphology of the subsequently connected printed circuit board (PCB). If it does not match the morphology of the printed circuit board, solder ball non-wetting will occur in the final package stacking structure connection, and even cause reliability problems for consumer products.

因此,如何克服習知技術之種種缺點,實為目前各界亟欲解決之技術問題。 Therefore, how to overcome the various shortcomings of knowledge technology is a technical problem that all walks of life are eager to solve.

鑒於上述習知技術之缺失,本發明提供一種電子封裝件之製法,係包括:提供第一基板;於該第一基板上設置電子元件,其中,於該電子元件設置在該第一基板前,先進行該第一基板之加熱製程,以釋放應力;以及將第二基板結合至該第一基板。 In view of the above-mentioned deficiencies in the prior art, the present invention provides a method for manufacturing an electronic package, comprising: providing a first substrate; placing an electronic component on the first substrate, wherein before placing the electronic component on the first substrate, a heating process is first performed on the first substrate to release stress; and bonding a second substrate to the first substrate.

前述之電子封裝件之製法中,復包括在該第一基板及該第二基板間形成包覆層,以包覆該電子元件。 The aforementioned method for manufacturing an electronic package further includes forming a coating layer between the first substrate and the second substrate to cover the electronic component.

前述之電子封裝件之製法中,復包括於該第一基板未接置第二基板之側設置複數導電元件。 The aforementioned method for manufacturing an electronic package further includes providing a plurality of conductive elements on the side of the first substrate that is not connected to the second substrate.

前述之電子封裝件之製法中,該第一基板及該第二基板之其中一 者為無核心層基板,並經過該加熱製程,以釋放應力。 In the aforementioned method for manufacturing electronic packages, one of the first substrate and the second substrate is a substrate without a core layer and undergoes the heating process to release stress.

前述之電子封裝件之製法中,該第一基板及該第二基板之另一者為具核心層基板。 In the aforementioned method for manufacturing an electronic package, the other of the first substrate and the second substrate is a substrate having a core layer.

前述之電子封裝件之製法中,該第一基板及該第二基板均為無核心層基板,並經過該加熱製程,以釋放應力。 In the aforementioned method for manufacturing electronic packages, the first substrate and the second substrate are both core-less substrates and undergo the heating process to release stress.

前述之電子封裝件之製法中,該電子元件係透過複數導電凸塊接置於該第一基板上。 In the aforementioned method for manufacturing an electronic package, the electronic component is connected to the first substrate via a plurality of conductive bumps.

前述之電子封裝件之製法中,復包括形成底膠於該電子元件與該第一基板間,用以包覆該複數導電凸塊。 The aforementioned method for manufacturing the electronic package further includes forming a primer between the electronic component and the first substrate to cover the plurality of conductive bumps.

前述之電子封裝件之製法中,該第二基板透過複數導電件接置於該第二基板上。 In the aforementioned method for manufacturing an electronic package, the second substrate is connected to the second substrate through a plurality of conductive components.

前述之電子封裝件之製法中,該無核心層基板包含有介電層及結合該介電層之佈線層。 In the aforementioned method for manufacturing electronic packages, the coreless substrate includes a dielectric layer and a wiring layer combined with the dielectric layer.

由上可知,本發明之電子封裝件之製法主要在第一基板為無核心層基板時,於電子元件接置於該第一基板前,或第二基板為無核心層基板,於該第二基板接置於該第一基板前,先進行加熱製程,以達到應力釋放目的。俾藉由第一基板或第二基板的應力釋放,而使最終電子封裝件的形貌符合預期需求,以避免習知封裝堆疊結構的形貌與印刷電路板的形貌不匹配,發生銲球未濕潤(solder ball non-wetting)的問題,導致消費性產品可靠度問題。 As can be seen from the above, the manufacturing method of the electronic package of the present invention mainly performs a heating process before the electronic components are placed on the first substrate when the first substrate is a substrate without a core layer, or before the second substrate is placed on the first substrate when the second substrate is a substrate without a core layer, to achieve the purpose of stress release. By releasing the stress of the first substrate or the second substrate, the morphology of the final electronic package meets the expected requirements, so as to avoid the morphology of the conventional package stacking structure not matching the morphology of the printed circuit board, resulting in the problem of solder ball non-wetting, which leads to reliability problems of consumer products.

1:封裝堆疊結構1: Package stack structure

10:第一半導體晶片10: First semiconductor chip

11:第一封裝基板11: First packaging substrate

111,121:線路層111,121: Circuit layer

12:第二封裝基板12: Second packaging substrate

13:銲球13: Welding Ball

14:第二半導體晶片14: Second semiconductor chip

15:封裝膠體15: Packaging colloid

16:底膠16: Base glue

2:電子封裝件2: Electronic packaging

20:電子元件20: Electronic components

200:導電凸塊200: Conductive bump

201:底膠201: Base glue

21:第一基板21: First substrate

21a:第一側21a: First side

21b:第二側21b: Second side

211:介電層211: Dielectric layer

212:佈線層212: Wiring layer

22:第二基板22: Second substrate

220:核心層220: Core layer

222:線路層222: Circuit layer

23:導電件23: Conductive parts

24:包覆層24: Coating layer

26:導電元件26: Conductive element

S21~S25:步驟S21~S25: Steps

圖1為習知封裝堆疊結構1之剖面示意圖。 FIG1 is a schematic cross-sectional view of a known package stacking structure 1.

圖2為本發明之電子封裝件之製法的流程示意圖。 Figure 2 is a schematic diagram of the process of manufacturing the electronic package of the present invention.

圖3~圖7為本發明之電子封裝件之製法的剖面示意圖。 Figures 3 to 7 are cross-sectional schematic diagrams of the manufacturing method of the electronic package of the present invention.

以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The following is a specific and concrete example to illustrate the implementation of the present invention. People familiar with this technology can easily understand other advantages and effects of the present invention from the content disclosed in this manual.

須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如「上」、「第一」、「第二」及「一」等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。 It should be noted that the structures, proportions, sizes, etc. depicted in the drawings attached to this specification are only used to match the contents disclosed in the specification for understanding and reading by people familiar with this technology, and are not used to limit the restrictive conditions for the implementation of the present invention. Therefore, they have no substantial technical significance. Any modification of the structure, change of the proportion relationship or adjustment of the size should still fall within the scope of the technical content disclosed by the present invention without affecting the effects and purposes that can be achieved by the present invention. At the same time, the terms such as "above", "first", "second" and "one" used in this specification are only used to facilitate the clarity of the description, and are not used to limit the scope of implementation of the present invention. Changes or adjustments to their relative relationships, without substantially changing the technical content, should also be regarded as the scope of implementation of the present invention.

請參閱圖2,係為本發明之電子封裝件之製法的流程示意圖,另請同時配合參閱圖3~圖7,係為本發明之電子封裝件之製法的剖面示意圖。 Please refer to Figure 2, which is a schematic diagram of the process of manufacturing the electronic package of the present invention, and please also refer to Figures 3 to 7, which are cross-sectional schematic diagrams of the manufacturing method of the electronic package of the present invention.

如圖2及圖3所示,首先進行步驟S21,提供第一基板21,並對該第一基板21進行加熱以釋放應力。 As shown in FIG. 2 and FIG. 3, step S21 is first performed to provide a first substrate 21, and the first substrate 21 is heated to release stress.

該第一基板21例如為無核心層基板,其具有相對之第一側21a及第二側21b,並包含介電層211及結合介電層211之佈線層212。例如,形成佈線層212之材質為銅,形成該介電層211之材質為聚對二唑苯(Polybenzoxazole,簡稱PBO)、聚醯亞胺(Polyimide,簡稱PI)、預浸材(Prepreg,簡稱PP)或 其它等之介電材,且可採用線路重佈層(Redistribution layer,簡稱RDL)製程形成該佈線層212與該介電層211。 The first substrate 21 is, for example, a coreless substrate having a first side 21a and a second side 21b opposite to each other, and includes a dielectric layer 211 and a wiring layer 212 combined with the dielectric layer 211. For example, the material forming the wiring layer 212 is copper, and the material forming the dielectric layer 211 is polybenzoxazole (PBO), polyimide (PI), prepreg (PP) or other dielectric materials, and the wiring layer 212 and the dielectric layer 211 can be formed by a redistribution layer (RDL) process.

本步驟主要對該第一基板21進行加熱製程,以達到應力釋放目的,避免後在製作過程中受到外力或者熱製程的影響導致有殘留應力的累積,甚至影響最終電子封裝件結構之形貌。 This step mainly performs a heating process on the first substrate 21 to achieve the purpose of stress release, so as to avoid the accumulation of residual stress caused by external force or thermal process in the subsequent manufacturing process, and even affect the morphology of the final electronic package structure.

如圖2及圖4所示,進行步驟S22,於該第一基板21上設置至少一電子元件20。 As shown in FIG. 2 and FIG. 4 , step S22 is performed to set at least one electronic component 20 on the first substrate 21.

該電子元件20設於第一基板21之第一側21a上,並電性連接佈線層212。該電子元件20可例如為主動元件、被動元件或其二者組合等。該主動元件例如為半導體晶片,該被動元件例如為電阻、電容及電感。於本實施例中,該電子元件20係為半導體晶片,並以覆晶方式透過複數導電凸塊200設於第一基板21之第一側21a上。於其它實施例中,電子元件20亦可經由打線方式、直接接觸或其它適當方式電性連接佈線層212。 The electronic component 20 is disposed on the first side 21a of the first substrate 21 and electrically connected to the wiring layer 212. The electronic component 20 may be, for example, an active component, a passive component, or a combination thereof. The active component may be, for example, a semiconductor chip, and the passive component may be, for example, a resistor, a capacitor, and an inductor. In this embodiment, the electronic component 20 is a semiconductor chip and is disposed on the first side 21a of the first substrate 21 through a plurality of conductive bumps 200 in a flip chip manner. In other embodiments, the electronic component 20 may also be electrically connected to the wiring layer 212 by wire bonding, direct contact, or other appropriate methods.

另外,可於該電子元件20與該第一基板21間佈設有底膠201,以包覆該複數導電凸塊200。 In addition, a base glue 201 may be disposed between the electronic element 20 and the first substrate 21 to cover the plurality of conductive bumps 200.

如圖2及5圖所示,進行步驟S23,將第二基板22結合至第一基板21。 As shown in Figures 2 and 5, step S23 is performed to bond the second substrate 22 to the first substrate 21.

本實施例中該第二基板22為具核心層基板,其具有核心層220以及線路層222,該第二基板22透過複數導電件23接置於該第一基板21之第一側21a,並使該線路層222電性連接該佈線層212。該導電件23例如為銅柱或銲錫球。 In this embodiment, the second substrate 22 is a core layer substrate having a core layer 220 and a circuit layer 222. The second substrate 22 is connected to the first side 21a of the first substrate 21 through a plurality of conductive elements 23, and the circuit layer 222 is electrically connected to the wiring layer 212. The conductive element 23 is, for example, a copper column or a solder ball.

由於該第二基板22設有核心層220而具備一定強度,因而毋需先 進行加熱釋放應力。於另一實施例中,如該第二基板22為無核心層基板,則可比照前述S21步驟,在該第二基板22接置於該第一基板21前,先對該第二基板22進行加熱製程以釋放應力。 Since the second substrate 22 has a core layer 220 and has a certain strength, it is not necessary to heat it first to release stress. In another embodiment, if the second substrate 22 is a substrate without a core layer, the second substrate 22 can be heated to release stress before being placed on the first substrate 21, similar to the aforementioned step S21.

於又一實施例中,如該第一基板21設有核心層而具備一定強度,則毋需先進行加熱釋放應力,而可直接將電子元件20設於該第一基板21上;另如該第二基板22為無核心層基板,則在該第二基板22接置於該第一基板21前,先對該第二基板22進行加熱製程以釋放應力。 In another embodiment, if the first substrate 21 has a core layer and has a certain strength, it is not necessary to heat it first to release the stress, and the electronic component 20 can be directly placed on the first substrate 21; if the second substrate 22 is a substrate without a core layer, the second substrate 22 is first heated to release the stress before being placed on the first substrate 21.

如圖2及6圖所示,進行步驟S24,在第一基板21及第二基板22間形成包覆層24。 As shown in Figures 2 and 6, step S24 is performed to form a coating layer 24 between the first substrate 21 and the second substrate 22.

本實施例中主要在第一基板21及第二基板22間形成用以包覆該電子元件20之包覆層24,該包覆層24可為絕緣材,如聚醯亞胺(polyimide,簡稱PI)、乾膜(dry film)、環氧樹脂(epoxy)之封裝膠體或封裝材(molding compound),但不限於上述。 In this embodiment, a coating layer 24 is mainly formed between the first substrate 21 and the second substrate 22 to cover the electronic element 20. The coating layer 24 can be an insulating material, such as polyimide (PI), dry film, epoxy packaging colloid or molding compound, but is not limited to the above.

如圖2及7圖所示,進行步驟S25,於第一基板下方設置複數導電元件26。 As shown in Figures 2 and 7, step S25 is performed to set a plurality of conductive elements 26 under the first substrate.

本實施例中主要在第一基板21之第二側21b結合複數如銲錫凸塊或銲球(其規格為C4型)之導電元件26,並使該複數導電元件26電性連接該佈線層212,以製得本發明之電子封裝件2。後續該電子封裝件2可透過該複數導電元件26接置於如電路板之外部裝置。 In this embodiment, a plurality of conductive elements 26 such as solder bumps or solder balls (whose specifications are C4 type) are mainly combined on the second side 21b of the first substrate 21, and the plurality of conductive elements 26 are electrically connected to the wiring layer 212 to obtain the electronic package 2 of the present invention. Subsequently, the electronic package 2 can be connected to an external device such as a circuit board through the plurality of conductive elements 26.

因此,本發明之電子封裝件之製法主要在第一基板為無核心層基板時,於電子元件接置於該第一基板前,或第二基板為無核心層基板,於該第二基板接置於該第一基板前,先進行加熱製程,以達到應力釋放目的。俾藉由第一 基板或第二基板的應力釋放,而使最終電子封裝件的形貌符合預期需求,避免習知封裝堆疊結構的形貌與印刷電路板的形貌不匹配,發生銲球未濕潤的問題,導致消費性產品可靠度問題。此外,前述製法無需增加新開發製程及材料或購買機台,以現有材料及舊有製程及機台即可解決業界現有技術問題,故不會有大量額外成本支出。 Therefore, the manufacturing method of the electronic package of the present invention mainly performs a heating process before the electronic components are placed on the first substrate when the first substrate is a substrate without a core layer, or before the second substrate is placed on the first substrate when the second substrate is a substrate without a core layer, to achieve the purpose of stress release. By releasing the stress of the first substrate or the second substrate, the morphology of the final electronic package meets the expected requirements, avoiding the mismatch between the morphology of the known package stacking structure and the morphology of the printed circuit board, and the problem of the solder ball not being wetted, which leads to the reliability problem of consumer products. In addition, the above-mentioned manufacturing method does not need to increase the development of new processes and materials or purchase machines. The existing technical problems in the industry can be solved with existing materials and old processes and machines, so there will be no large amount of additional cost expenditure.

上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above embodiments are used to illustrate the principles and effects of the present invention, but are not used to limit the present invention. Anyone familiar with this technology can modify the above embodiments without violating the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be as listed in the scope of the patent application described below.

S21~S25:步驟 S21~S25: Steps

Claims (10)

一種電子封裝件之製法,係包括: A method for manufacturing an electronic package includes: 提供第一基板; Providing a first substrate; 於該第一基板上設置電子元件,其中,於該電子元件設置在該第一基板前,先進行該第一基板之加熱製程,以釋放應力;以及 An electronic component is arranged on the first substrate, wherein before the electronic component is arranged on the first substrate, a heating process is first performed on the first substrate to release stress; and 將第二基板結合至該第一基板。 Bonding the second substrate to the first substrate. 如請求項1所述之電子封裝件之製法,復包括在該第一基板及該第二基板間形成包覆該電子元件之包覆層。 The method for manufacturing an electronic package as described in claim 1 further includes forming a coating layer between the first substrate and the second substrate to cover the electronic component. 如請求項1所述之電子封裝件之製法,復包括於該第一基板未接置第二基板之側設置複數導電元件。 The method for manufacturing an electronic package as described in claim 1 further includes providing a plurality of conductive elements on the side of the first substrate that is not connected to the second substrate. 如請求項1所述之電子封裝件之製法,其中,該第一基板及該第二基板之其中一者為無核心層基板,並經過該加熱製程,以釋放應力。 A method for manufacturing an electronic package as described in claim 1, wherein one of the first substrate and the second substrate is a substrate without a core layer and undergoes the heating process to release stress. 如請求項4所述之電子封裝件之製法,其中,該第一基板及該第二基板之另一者為具核心層基板。 A method for manufacturing an electronic package as described in claim 4, wherein the other of the first substrate and the second substrate is a substrate having a core layer. 如請求項1所述之電子封裝件之製法,其中,該第一基板及該第二基板均為無核心層基板,並經過該加熱製程,以釋放應力。 The method for manufacturing an electronic package as described in claim 1, wherein the first substrate and the second substrate are both core-less substrates and undergo the heating process to release stress. 如請求項1所述之電子封裝件之製法,其中,該電子元件係透過複數導電凸塊接置於該第一基板上。 A method for manufacturing an electronic package as described in claim 1, wherein the electronic component is connected to the first substrate via a plurality of conductive bumps. 如請求項7所述之電子封裝件之製法,復包括形成底膠於該電子元件與該第一基板間,用以包覆該複數導電凸塊。 The method for manufacturing an electronic package as described in claim 7 further includes forming a primer between the electronic component and the first substrate to cover the plurality of conductive bumps. 如請求項1所述之電子封裝件之製法,其中,該第二基板透過複數導電件接置於該第一基板上。 A method for manufacturing an electronic package as described in claim 1, wherein the second substrate is connected to the first substrate through a plurality of conductive components. 如請求項1所述之電子封裝件之製法,其中,該第一基板及該第二基板之其中一者為無核心層基板,該無核心層基板包含有介電層及結合該介電層之佈線層。 A method for manufacturing an electronic package as described in claim 1, wherein one of the first substrate and the second substrate is a coreless substrate, and the coreless substrate includes a dielectric layer and a wiring layer combined with the dielectric layer.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW452937B (en) * 2000-05-04 2001-09-01 Chen Tsung Chih IC encapsulation antimony-bismuth cooler substrate fabrication method
TW202040707A (en) * 2019-04-23 2020-11-01 智威科技股份有限公司 Semiconductor element package structure and method
TW202414624A (en) * 2022-09-19 2024-04-01 新加坡商星科金朋私人有限公司 Semiconductor device and method for making the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW452937B (en) * 2000-05-04 2001-09-01 Chen Tsung Chih IC encapsulation antimony-bismuth cooler substrate fabrication method
TW202040707A (en) * 2019-04-23 2020-11-01 智威科技股份有限公司 Semiconductor element package structure and method
TW202414624A (en) * 2022-09-19 2024-04-01 新加坡商星科金朋私人有限公司 Semiconductor device and method for making the same

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