TWI873782B - Semiconductor manufacturing device and semiconductor device manufacturing method - Google Patents

Abstract

[Topic] Provide a technology that can improve the accuracy of picking while suppressing the increase of picking time. [Solution] A semiconductor manufacturing device, comprising: a platform, which holds a crystal grain; a head, which is provided with a barrel clamp having a suction hole for adsorbing the crystal grain; a flow sensor, which is provided in a pipe connected to the suction hole; and a control device, which obtains relevant data before production. The control device is configured to make the lower end face of the barrel clamp descend from the top of the crystal grain held by the platform to a specific height. At the specific height, the flow rate of the gas flowing in the suction hole of the barrel clamp is detected by the flow sensor. Based on the relevant data and the flow rate detected at the specific height, the descending amount for the lower end face of the barrel clamp to land on the top of the crystal grain held by the platform is calculated.

Description

Semiconductor manufacturing device and semiconductor device manufacturing method

This disclosure relates to a semiconductor manufacturing device, which can be applied to a die bonder that performs operations such as height detection of a bonding head.

Semiconductor manufacturing devices such as die bonders are devices that use bonding materials to bond (mount and bond) components such as components to substrates or components. Bonding materials are, for example, liquid or film-like resins or solders. Components are, for example, semiconductor chips, MEMS (Micro Electro Mechanical System) and glass chips. Substrates are, for example, wire frames formed of wiring boards or metal sheets, glass substrates, etc.

For example, in a die bonder, a die is picked up from a semiconductor wafer (hereinafter referred to as a wafer) using a pickup head or a collet (adsorption nozzle) provided on the bonding head. Then, the die is bonded to a substrate by the bonding head. In the die bonder, the continuous action of picking up and bonding is repeated.

When picking up a crystal, in order to prevent the crystal from failing to reach the target position or causing damage to the crystal, the amount of descent of the bonding head when picking up the crystal is automatically measured (Patent Document 1).

[Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Publication No. 2014-56980

Before production starts, the bonding head is lowered during production based on the amount of descent measured using the technology of Patent Document 1. When there is a temporal change in the continuous action, the above-mentioned descent amount becomes inappropriate. Furthermore, during production, the bonding head is lowered based on the amount of descent measured using the technology of Patent Document 1, and the picking time increases.

The subject of this disclosure is to provide a technology that can improve the accuracy of picking while suppressing the increase in picking time. Other subjects and novel features can be understood from the description of this manual and the attached drawings.

If we briefly explain the outline of the representative contents of this disclosure, it is as follows.

That is, the semiconductor manufacturing device is equipped with: a platform, which holds the crystal grain; a head, which is provided with a barrel clamp having a suction hole for adsorbing the crystal grain; a flow sensor, which is provided in a pipe connected to the suction hole; and a control device, which obtains relevant data before production. The control device is configured to make the lower end face of the barrel clamp descend from the top of the crystal grain held by the platform to a specific height. At the specific height, the flow rate of the gas flowing in the suction hole of the barrel clamp is detected by the flow sensor. Based on the relevant data and the flow rate detected at the specific height, the descending amount for the lower end face of the barrel clamp to land on the top of the crystal grain held by the platform is calculated.

By using this disclosure, it is possible to suppress the increase in picking time while improving the accuracy of picking.

1: Die bonder (semiconductor manufacturing equipment)

31: Middle platform (platform)

41: Joint head (head)

421: Collet

421a: Lower end surface

481: Piping

482:Flow sensor

80: Control unit (control device)

D: Grain

[Figure 1] is a schematic top view showing an example of the structure of a die bonder.

[Figure 2] is a diagram illustrating the schematic structure viewed from the direction of arrow A in Figure 1.

[Figure 3] is a schematic cross-sectional view showing the main parts of the wafer supply unit shown in Figure 1.

[Figure 4] is a flow chart showing a method for manufacturing a semiconductor device of the die bonder shown in Figure 1.

[Figure 5] is a schematic cross-sectional view of the joint head shown in Figure 1.

[Figure 6] is a diagram showing the height of the joint head during the teaching action before the start of production.

[Figure 7] is a graph showing an example of the relationship between flow rate and distance obtained during the teaching operation before production starts.

[Figure 8] is a table showing the graph corresponding to Figure 7.

[Figure 9] is a diagram showing the height of the bonding head during the picking action for teaching.

[Figure 10] is a diagram showing the height of the bonding head during the picking action without teaching.

[Figure 11] is a diagram showing the height of the bonding head during the bonding operation.

[Figure 12(a)] to [Figure 12(e)] are schematic diagrams showing a method for measuring the collet height using a landing detection sensor.

[Figure 13] is a diagram showing the height of the joint head in the teaching action during picking in the comparative example.

The following is an explanation of the implementation and comparative examples using drawings. However, in the following explanation, the same components are given the same symbols and repeated explanations are omitted. In addition, in order to make the explanation clearer, the width, thickness, shape, etc. of each part are schematically represented in some drawings compared to the actual state. Furthermore, even between multiple drawings, the relationship between the dimensions of each element and the ratio of each element do not necessarily have to be consistent.

The structure of a die bonder as one embodiment of a semiconductor manufacturing device is described using FIGS. 1 to 3. FIG. 1 is a schematic top view showing an example of the structure of a die bonder. FIG. 2 is a diagram showing the schematic structure viewed from the direction of arrow A in FIG. 1. FIG. 3 is a schematic cross-sectional view showing the main parts of the wafer supply unit shown in FIG. 1.

The die bonder 1 generally comprises a wafer supply unit 10, a pickup unit 20, an intermediate platform unit 30, a bonding unit 40, a transport unit 50, a substrate supply unit 60, a substrate unloading unit 70 and a control unit (control device) 80. The Y direction is the front-to-back direction of the die bonder 1, the X direction is the left-right direction, and the Z direction is the up-down direction. The wafer supply unit 10 is arranged at the front side of the die bonder 1, and the bonding unit 40 is arranged at the rear side. The wafer supply unit 10 supplies the die D mounted on the substrate S. Here, a plurality of product areas (hereinafter referred to as the package area P) that become the final package are formed on the substrate S.

The wafer supply unit 10 has a wafer cassette lifter 11, a wafer holding table 12, a stripping unit 13, and a wafer recognition camera 14. The wafer supply unit 10 supplies the die D mounted on the substrate S. Here, multiple product areas (hereinafter referred to as package area P) that become the final package are formed on the substrate S.

The wafer cassette lifter 11 moves the wafer cassette (not shown) storing multiple wafer rings WR up and down to the wafer transfer height. The wafer ring WR supplied from the wafer cassette lifter 11 is calibrated by the wafer correction chute not shown. The wafer ring WR is taken out from the wafer cassette by the wafer lifter not shown and supplied to the wafer holding table 12, or taken out from the wafer holding table 12 and stored in the wafer cassette.

The wafer holding table 12 has an expansion ring 121 for holding the wafer ring WR, and a support ring 122 for horizontally positioning the dicing tape DT held on the wafer ring WR. The peeling unit 13 is arranged inside the support ring 122.

The wafer W is bonded (pasted) on the dicing tape DT, and the wafer W is divided into a plurality of dies D. The dicing tape DT is transparent to visible light. A thin film adhesive material DF called a die attach film (DAF) is pasted between the wafer W and the dicing tape DT. The adhesive material DF is cured by heating.

The wafer holding table 12 is moved in the XY direction by a driving unit not shown in the figure, so that the picked-up die D is moved to the position of the peeling unit 13. The wafer holding table 12 rotates the wafer ring WR in the XY plane by a driving unit not shown in the figure. The peeling unit 13 is moved in the up and down direction by a driving unit not shown in the figure. The peeling unit 13 peels the die D from the dicing tape DT.

The wafer recognition camera 14 grasps the pick-up position of the die D picked up from the wafer W, or performs surface inspection of the die D.

The pickup unit 20 has a pickup head 21 and a Y drive unit 23. A barrel clamp 22 is provided at the front end of the pickup head 21 to absorb and hold the peeled grain D. The pickup head 21 picks up the grain D from the wafer supply unit 10 and places it on the intermediate platform 31. The Y drive unit 23 moves the pickup head 21 in the Y-axis direction. The pickup unit 20 has various drives (not shown) that lift, rotate, and move the pickup head 21 in the X-direction.

The intermediate platform portion 30 has an intermediate platform 31 for placing the crystal grain D, and a platform recognition camera 34 for identifying the crystal grain D on the intermediate platform 31. The intermediate platform 31 has a suction hole for adsorbing the placed crystal grain D. The placed crystal grain D is temporarily held on the intermediate platform 31. The intermediate platform 31 is a placing platform for placing the crystal grain D, and is also a picking platform for picking up the crystal grain D.

The bonding section 40 has a bonding head 41, a Y drive section 43, a substrate recognition camera 44, and a bonding platform 46. The bonding head 41 is provided with a clamp section 42 at the front end for adsorbing and holding the crystal grain D. The Y drive section 43 moves the bonding head 41 in the Y-axis direction. The substrate recognition camera 44 photographs the position recognition mark (not shown) of the package area P of the substrate S to identify the bonding position. The bonding platform 46 is raised when the crystal grain D is placed on the substrate S to support the substrate S from below. The bonding platform 46 has a suction port (not shown) for vacuum adsorbing the substrate S, which can fix the substrate S. The bonding platform 46 has a heating section (not shown) for heating the substrate S. The bonding section 40 has various drive sections (not shown) for lifting, rotating, and moving the bonding head 41 in the X direction.

With such a structure, the bonding head 41 corrects the pickup position and posture according to the imaging data of the platform recognition camera 34, and picks up the die D from the middle platform 31. Moreover, the bonding head 41 is bonded to the package area P of the substrate S according to the imaging data of the substrate recognition camera 44, or is bonded in the form of stacking on the die that has been bonded to the package area P of the substrate S.

The transport section 50 has a transport claw 51 for grabbing and transporting the substrate S and a transport channel 52 for moving the substrate S. The substrate S is moved in the X direction by using a ball screw (not shown) provided along the transport channel 52 to drive a nut (not shown) provided on the transport claw 51 of the transport channel 52. With such a structure, the substrate S is moved from the substrate supply section 60 along the transport channel 52 to the bonding position, and after bonding, it is moved to the substrate removal section 70, and the substrate S is handed over to the substrate removal section 70.

The substrate supply unit 60 takes out the substrate S stored in the transport jig and carried in from the transport jig and supplies it to the transport unit 50. The substrate unloading unit 70 stores the substrate S carried by the transport unit 50 in the transport jig.

The control unit 80 has a program (software) for monitoring and controlling the operation of each part of the die bonder 1 and a memory device for storing data, a central processing unit (CPU) for executing the program stored in the memory device, and an input-output device (not shown). The input-output device has an image capture device (not shown), a motor control device (not shown), and an I/O signal control device (not shown). The image capture device captures image data from the wafer recognition camera 14, the stage recognition camera 34, and the substrate recognition camera 44. The motor control device controls the drive unit of the wafer supply unit 10, the drive unit of the pickup unit 20, the Y drive unit 43 or the Z drive unit 47 of the bonding unit 40, etc. The I/O signal control device intercepts various sensor signals such as the landing detection sensor 417 or the flow sensor 482 described later, or controls the switch of the lighting device, etc.

Part of the manufacturing process of semiconductor devices includes a process of mounting a die on a substrate and assembling a package. Part of the process of assembling a package includes a dicing process of dividing a die from a wafer and a die bonding process of mounting the divided die on a substrate. The die bonding process (the manufacturing method of a semiconductor device) using a die bonder 1 is described using FIG. 4. FIG. 4 is a flow chart showing the manufacturing method of a semiconductor device using the die bonder shown in FIG. 1. In the following description, the actions of the various parts constituting the die bonder 1 are controlled by the control unit 80.

(Wafer loading process: Process S1)

The wafer ring WR is supplied to the wafer cassette of the wafer cassette lifter 11. The supplied wafer ring WR is supplied to the wafer holding table 12. In addition, the wafer W is inspected for each die in advance by an inspection device such as a probe, and wafer image data indicating good and bad quality of each die is generated and stored in the memory device of the control unit 80.

(Substrate loading project: Project S2)

The transport jig storing the substrate S is supplied to the substrate supply unit 60. In the substrate supply unit 60, the substrate S is taken out from the transport jig and fixed to the transport claw 51.

(Pickup Project: Project S3)

After process S1, the wafer holding table 12 is moved in such a way that the desired die D can be picked up from the dicing tape DT. The die D is photographed by the wafer recognition camera 14, and the positioning and surface inspection of the die D are performed based on the image data obtained by the photography. By performing image processing on the image data, the offset (X, Y, θ direction) of the die D on the wafer holding table 12 from the die position reference point of the die bonder is calculated for positioning. In addition, the die position reference point is a specific position of the wafer holding table 12 that is maintained as the initial setting of the device in advance. By performing image processing on the image data, the surface inspection of the die D is performed.

The positioned die D is peeled off from the dicing tape DT by the peeling unit 13 and the pickup head 21. The die D peeled off from the dicing tape DT is adsorbed and held by the cartridge 22 provided on the pickup head 21, and is transported to the intermediate platform 31 and placed thereon.

The platform recognition camera 34 is used to photograph the grain D on the intermediate platform 31. Based on the image data obtained by the photography, the positioning and surface inspection of the grain D are performed. By processing the image data, the offset (X, Y, θ direction) of the grain D on the intermediate platform 31 from the grain position reference point of the grain bonder is calculated for positioning. In addition, the grain position reference point is a specific position of the intermediate platform 31 that is maintained as the initial setting of the device in advance. By processing the image data, the surface inspection of the grain D is performed.

The pick-up head 21 that transports the die D to the intermediate platform 31 returns to the wafer supply unit 10. According to the above sequence, the next die D is peeled off from the dicing tape DT, and according to the same sequence thereafter, the die D is peeled off from the dicing tape DT one by one.

(Jointing Engineering: Engineering S4)

The substrate S is transported to the bonding platform 46 by the transport unit 50. The substrate S placed on the bonding platform 46 is photographed by the substrate recognition camera 44, and image data is obtained by photography. The image data is processed by image processing to calculate the offset (X, Y, θ direction) of the substrate S from the substrate position reference point of the die bonder 1. In addition, the substrate position reference point is maintained by presetting the specific position of the bonding unit 40 as the initial setting of the device.

The offset of the die D on the intermediate platform 31 calculated in process S3 is used to correct the adsorption position of the bonding head 41 and the die D is adsorbed by the clamping portion 42. The die D is bonded to a specific position of the substrate S supported on the bonding platform 46 by the bonding head 41 that adsorbs the die D from the intermediate platform 31. The die D bonded to the substrate S is photographed by the substrate recognition camera 44, and the image data obtained by the photography is used to check whether the die D is bonded to the desired position.

The bonding head 41 that bonded the die D to the substrate S returns to the intermediate platform 31. According to the above sequence, the next die D is picked up from the intermediate platform 31 and bonded to the substrate S. This is repeated, and the die D is bonded to all the package areas P of the substrate S.

(Substrate removal project: Project S5)

The substrate S to which the die D is bonded is transported to the substrate unloading unit 70. In the substrate unloading unit 70, the substrate S is taken out from the transport claw 51 and stored in the transport jig. The transport jig storing the substrate S is unloaded from the die bonder 1.

As described above, the die D is mounted on the substrate S and removed from the die bonder 1. Afterwards, for example, the transport jig storing the substrate S with the die D mounted thereon is transported to the wire bonding process, and the electrode of the die D is electrically connected to the electrode of the substrate S via the Au wire or the like. Furthermore, the substrate S is transported to the molding process, and the die D and the Au wire are sealed with a molding resin (not shown), thereby completing the semiconductor package.

In the case of stacking, following the wire bonding process, the transport jig carrying the substrate S with the die D mounted thereon is transported into the die bonder and the die D is stacked on the die D mounted on the substrate S. After being taken out of the die bonder, the die D is electrically connected to the electrode of the substrate S via the Au wire in the wire bonding process. The die D above the second section is peeled off from the dicing tape DT in the above method, and then transported to the bonding section and stacked on the die D. After the above process is repeated a certain number of times, the substrate S is transported to the molding process, and the plurality of die D and the Au wire are sealed with a molding resin (not shown), thereby completing the stacking seal.

The structure of the bonding head 41 is explained using FIG5. FIG5 is a schematic cross-sectional view of the bonding head shown in FIG1.

The joint head 41 is connected to the Z drive part 47 mounted on the platform of the Y drive part 43. The clamp part 42 is provided on the joint head 41. The clamp part 42 has a clamp 421 made of an elastic body such as rubber at the front end and a clamp support 422 for mounting the clamp 421. The joint head 41 has a movable part 411, a ball bushing 412, a contact piece 413, a head support part 414, a compression spring 416 and a landing detection sensor 417. The clamp part 42 is connected to the vacuum suction system 48 via the movable part 411.

A sensor support portion 414a formed integrally with the head support portion 414 is provided on the upper portion of the head support portion 414. The sensor support portion 414a has an opening portion 414b for inserting and arranging the movable portion 411. A lifting drive portion (not shown) described later is connected to the side of the head support portion 414. A ball bushing 412 whose opening portion 412a extends slightly vertically is provided on the lower portion of the head support portion 414. The movable portion 411 inserted into the opening portion 412a of the ball bushing 412 is supported so as to be able to be lifted and lowered slightly vertically.

A contact piece 413 is horizontally mounted at the approximate middle position of the movable part 411. A compression spring 416 is disposed between the upper surface of the contact piece 413 and the lower surface of the sensor support part 414a, and the compression spring 416 pushes the clamp part 42 downward through the contact piece 413. Even if the compression spring 416 is replaced by a cylinder, the clamp part 42 can be pushed downward.

The landing detection sensor 417 is a detector that mechanically detects landing during engagement, and is installed by passing through the sensor support portion 414a. Moreover, when the lower end surface 421a of the collet 421 contacts other components without rising, a specific gap (ds) is formed between the lower end surface 417a of the landing detection sensor 417 and the upper surface of the contact sheet 413. The landing detection sensor 417 is a gap sensor that detects the distance of the gap.

The Z drive unit 47 has a platform 471 mounted on the Y drive unit 43, and a Z axis 472 that is lifted relative to the platform 471. A lifting drive unit (not shown) is provided on the platform 471. The lifting drive unit is composed of, for example, a servo motor or a stepping motor, a ball screw, a nut, and a cam. The Z axis 472 is lifted and lowered along the platform 471 arranged in the up and down directions by the lifting drive unit.

A suction hole with one end opening toward the lower end surface 421a is provided in the collet 421. The other end of the suction hole of the collet 421 is connected to the suction hole of the collet support 422, the suction hole of the movable part 411, and the piping 481 installed on the upper part of the movable part 411.

Pipe 481 is connected to a vacuum supply source (not shown). A flow sensor 482 and a valve 483 are provided on pipe 481 to detect the suction flow of gas caused by the vacuum supply source. Pipe 484 is connected to pipe 481, and pipe 484 is connected to a gas supply source (not shown). Valve 485 is provided on pipe 484. Even if the vacuum source and the gas supply source are included in the vacuum suction system 48 of the die bonder 1, it is also possible to be provided outside the die bonder 1. When using the vacuum supply source and the gas supply source of the factory, it is better to provide a pressure regulator in the vacuum suction system 48.

By closing valve body 485 and opening valve body 483, gas is sucked through pipe 481, the suction hole of movable part 411, the suction hole of cartridge holder 422, and the suction hole of cartridge 421, and an adsorption force is generated on the lower end surface 421a of cartridge 421. By closing valve body 483 and opening valve body 485, gas is ejected through pipe 481, the suction hole of movable part 411, the suction hole of cartridge holder 422, and the suction hole of cartridge 421.

(Teaching movements before production begins)

In the die bonder 1 constructed as described above, before actually performing the continuous actions of picking up and bonding (before production starts), the following information is obtained through the teaching action.

(1) Obtaining Pickup Height Information (PHD)

The control unit 80 obtains the picking height information (PHD) indicating the height (pick-up height (h5)) of the lower end surface 421a of the collet 421 when picking is performed in the continuous operation during production.

(2) Obtaining relevant data (CD)

The control unit 80 obtains the flow rate sucked by the lower end surface 421a of the collet 421 and the relevant data (CD) of the distance between the lower end surface 421a of the collet 421 and the upper surface of the grain D placed on the intermediate platform 31.

(3) Obtaining flow measurement height information (FHD)

The control unit 80 obtains the flow measurement height information (FHD) indicating the height (flow measurement height (h4)) of the lower end surface 421a of the collet 421 performing the teaching action when actually picking up the die D.

(4)Bonding height information (BHD)

Obtain the bonding height information (BHD) indicating the height (bonding height (h6)) of the lower end surface 421a of the collet 421 at the time of bonding.

When performing the actual picking action, the control unit 80 uses the relevant data (CD) and flow measurement height information (FHD) obtained by the teaching action before the start of production to perform the teaching action regularly. Through the teaching action, the descent correction information (DCD) of the bonding head 41 is obtained. In the picking action, the driving of the bonding head 41 is controlled by using the obtained descent correction information (DCD) following the teaching action. When performing the bonding action, the control unit 80 uses the descent correction information (DCD) and the bonding height information (BHD) to control the driving of the bonding head 41.

The teaching action before production starts in the die bonder 1 is described with reference to FIGS. 6 to 8. FIG. 6 is a diagram showing the height of the bonding head in the teaching action before production starts. FIG. 7 is a graph showing an example of the relationship between the flow rate and the distance obtained in the teaching action before production starts. FIG. 8 is a table showing the graph corresponding to FIG. 7.

(Step S11)

The control unit 80 moves the bonding head 41 to the top of the crystal grain D placed on the intermediate platform 31 at the high-speed descent start height (h1) so that the lower end surface 421a of the collet 421 faces the top of the crystal grain D. The crystal grain D is placed on the intermediate platform 31 in advance by the pickup head 21. The high-speed descent start height (h1) is the height of the lower end surface 421a of the collet 421 when the bonding head 41 moves horizontally between the intermediate platform 31 and the bonding platform 46, and is set to be lower than the height of the lower end surface 421a of the collet 421 when the Z axis 472 is located at the mechanical origin in the Z direction (origin height (h0)).

(Step S12)

The control unit 80 makes the bonding head 41 descend at high speed to the low speed descent starting height (h2). The low speed descent starting height (h2) is the height of the lower end surface 421a of the collet 421 when the low speed descent of the bonding head 41 starts.

(Step S13)

The control unit 80 stops the descent of the bonding head 41 and starts the timer before the low-speed start (step S131).

After the low-speed start timer has elapsed for a specific period of time, the control unit 80 opens the valve 485 to start the gas ejection (step S132). At this time, the valve 483 is closed. When the low-speed start timer is set to 0, there is no waiting time and step S132 is performed.

(Step S14)

After a certain period of time, the control unit 80 closes the valve 485 and opens the valve 483 to start the suction of gas (step S141).

The control unit 80 makes the joint head 41 descend only by a specific amount (△z1) (step S142), and measures the flow rate (FR) sucked by the barrel clamp 421 by the flow sensor 482 (step S143). The specific amount (△z1) is, for example, a multiple of the control resolution of the lifting drive unit.

The control unit 80 confirms the flow rate (FR) detected by the flow sensor 482, and confirms whether the flow rate (FR) is below a specific critical value (FRt) (step S144). The critical value (FRt) is a value that is set in advance as a value that is considered to be the value at which the lower end surface 421a of the clamp 421 contacts the grain D.

The control unit 80 repeats the processing of steps S142 to S144 until the flow rate (FR) becomes below the critical value (FRt).

After the flow measurement is completed, the control unit 80 closes the valve 483 and stops suction (step S145).

The control unit 80 stores the offset of the Z axis 472 from the mechanical origin in the Z direction at the height (pickup height (h5)) of the lower end surface 421a of the collet 421 when the flow rate (FR) becomes below the critical value (FRt) in the memory of the control unit 80 as the pickup height information (PHD) (step S146).

(Step S15)

The control unit 80 raises the bonding head 41 to a measurement start height (h3), which is a height that is only a specific distance higher than the pickup height (h5). The measurement start height (h3) is the height of the lower end surface 421a of the collet 421 when the measurement of the relevant data is started. The measurement start height (h3) is a height lower than the low-speed descent start height (h2).

(Step S16)

The control unit 80 closes the valve 485 and opens the valve 483 to start the suction of gas (step S161).

The control unit 80 measures the flow rate (FR) sucked by the cylinder clamp 421 through the flow sensor 482 (step S162).

The control unit 80 stores the measured flow rate (FR) and the height (hc) of the lower end surface 421a of the cylinder clamp 421 when the flow rate is measured in the memory of the control unit 80 (step S163).

The control unit 80 makes the joint head 41 drop only a specific amount (△z2) (step S164), and measures the flow rate (FR) sucked by the barrel clamp 421 through the flow sensor 482 (step S165). The specific amount (△z2) is a value less than △z1, such as the amount of control resolution of the lifting drive unit.

The control unit 80 stores the measured flow rate (FR) and the height (hc) of the lower end surface 421a of the cylinder clamp 421 when the flow rate is measured in the memory of the control unit 80 (step S166).

The control unit 80 repeats the processing of steps S164 to S166 until the height of the lower end surface 421a of the collet 421 reaches the picking height (h5).

The control unit 80 generates the data related to the flow rate (FR) and the distance (d) shown in FIG. 7 and FIG. 8 based on the flow rate (FR) and the height (hc) of the lower end surface 421a of the collet 421 stored in the memory and stores them in the memory of the control unit 80 (step S167). The distance (d) is the difference between the height (hc) of the lower end surface 421a of the collet 421 and the height of the top of the grain D (pickup height (h5)).

The control unit 80 sets the flow measurement height (h4=h5+dp) higher than the height of the top of the die D (pickup height (h5)) by a specific distance (dp), and stores the offset of the Z axis 472 from the mechanical origin in the Z direction as flow measurement height information (FHD) in the memory of the control unit 80 (step S168). As shown in FIG. 7, for example, dp=15μm is set. The flow rate (FRp) at this time is -0.14L/min.

The value obtained by adding and subtracting the difference in the Z-direction distance between the surface of the die D placed on the intermediate platform 31 and the surface of the substrate S placed on the bonding platform 46 to the offset of the Z-axis 472 from the mechanical origin in the Z direction at the pick-up height (h5) is stored in the memory of the control unit 80 as bonding height information (BHD) (step S169).

(Pick-up action: with instructional action)

The picking action of the die D in the teaching action during production is explained using FIG9. FIG9 is a diagram showing the height of the bonding head in the picking action during the teaching.

Steps S11 to S13 of the picking action are the same as the teaching action before production starts. The following is an explanation of the differences from the teaching action before production starts. In addition, even if the teaching action shown in Figure 9 is not performed during production, it can be performed before production starts or after production ends.

(Step S24)

After a specific period of time, the control unit 80 closes the valve 485 and opens the valve 483 to start gas suction. The control unit 80 lowers the bonding head 41 at a low speed to the flow measurement height (h4) indicated by the flow measurement height information (FHD).

(Step S25)

The control unit 80 stops the descent of the bonding head 41 and measures the flow rate sucked by the barrel clamp 421 through the flow sensor 482.

(Step S26)

The control unit 80 compares the flow rate (FRp) corresponding to the flow measurement height information (FHD) and the flow rate (FRm) measured in step S25 based on the relevant data (CD) stored in the memory. If the two are consistent, the control unit 80 makes the joint head 41 descend only to the flow measurement height (h4) indicated by the flow measurement height information (FHD).

When the flow rate (FRp) and the flow rate (FRm) are inconsistent, the height (h) of the lower end surface 421a of the clamp 421 changes (h=h4+α (α is a positive or negative number)). The control unit 80 obtains the distance (dm) corresponding to the flow rate (FRm) measured from the relevant data (CD) and makes the joint head 41 only descend by the distance (dm). dm is the descending amount after correction for dp, which is dm=dp-α. α is the correction amount.

(Step S27)

The control unit 80 picks up the die D through the bonding head 41.

(Pickup action: no teaching action)

The teaching during the above-mentioned picking action is not performed every time, but is performed periodically after a specific period of time. The picking action of the grain D without teaching is explained using Figure 10. Figure 10 is a diagram showing the height of the bonding head during the picking action without teaching.

Steps S11 to S13 in the picking action without teaching are the same as the picking action with teaching shown in FIG9 . The following is an explanation of the differences from the picking action with teaching.

(Step S34)

After a certain period of time, the control unit 80 closes the valve 485 and opens the valve 483 to start gas suction. The control unit 80 lowers the bonding head 41 at a low speed (for example, 10 μm/min) to the position (pickup height (h5)) indicated by the pickup height information (PHD).

(Joining action)

The bonding action of the die D is explained using FIG11. FIG11 is a diagram showing the height of the bonding head during the bonding action.

Steps S41~S43 of the joining action are the same as S11~S131 in the teaching action before production starts.

(Step S44)

The control unit 80 lowers the bonding head 41 according to the bonding height information (BHD) stored in the memory and the descent amount (dp or dm) obtained in step S27 during the picking operation, and lowers the bonding head 41 to a position of the bonding height (h7) at a low speed (e.g., 5μm/min), so that the die D lands on the substrate S.

(Step S45)

The control unit 80 also makes the bonding head 41 only descend a specific amount after the crystal grain D abuts against the substrate S. At this time, the barrel clamp portion 42 retreats only by descending a specific amount after the crystal grain D abuts against the substrate S, but since the compression spring 416 applies a pushing force, the crystal grain D held by the barrel clamp portion 42 is in a state where a pushing load is applied. By maintaining this state for only the pre-set bonding time, the crystal grain D is mounted on the substrate S.

In the bonding head 41, the bonding head 41 is lowered, and when the landing detection sensor 417 detects that there is a specific gap (specific interval) between the lower end surface 417a and the upper surface of the contact sheet 413, it is determined that the grain D and the substrate S are in contact. In addition, since the landing detection sensor 417 usually uses a displacement sensor, etc., in order to detect stably, a specific interval is set so that there is a sensitivity difference of tens of μm from the original landing position of the reference barrel clamp (pushed in state) for detection.

In addition, the height of the barrel clamp can be measured using the landing detection sensor 417. The method for measuring the height of the barrel clamp using the landing detection sensor 417 is explained using Figures 12(a) to 12(e). Figures 12(a) to 12(e) are schematic diagrams showing the method for measuring the height of the barrel clamp using the landing detection sensor.

Figure 12(a) shows the landing position of the reference cylinder. The control unit 80 memorizes the landing position (ho) of the reference cylinder of the linear scale on the device side as the origin through prior teaching.

Figures 12(b) and 12(d) show the case where the heights of the reference barrel clamp and the measurement target barrel clamp are the same. As shown in Figure 12(b), the control unit 80 confirms the landing detection sensor 417 at a specific distance (p) by the position (hs) above the landing point set in advance, while lowering the bonding head 41. Here, hs is the indication value of the linear scale, for example, hs=100μm. Furthermore, for example, p=5μm.

As shown in FIG12(d), the landing detection sensor 417 detects landing with a sensitivity difference of ha from the original landing position of the reference barrel clamp (in the pushed-in state) and sets a specific interval (do). That is, do=ds-(ho-ha). Here, ds is the gap between the lower end surface 417a of the landing detection sensor 417 and the upper surface of the contact sheet 413 when not landing. For example, ha is set to tens of μm.

The control unit 80 reads the indication value of the linear scale when the landing detection sensor 417 detects landing (do=ds-(ho-ha)) to measure the height of the clamp. During the pre-teaching and when the height of the clamp 421 is not changed, the value of the linear scale is the same as ha set as the sensitivity difference.

Figures 12(c) and 12(e) show the case where the heights of the reference barrel clamp and the target barrel clamp are different. In the case of the height change of the barrel clamp 421 during the pre-teaching, as shown in Figure 12(e), it can be seen that when the gap between the lower end surface 417a of the landing detection sensor 417 and the upper surface of the contact piece 413 becomes a specific interval (do), the joint head 41 is lowered. For example, when the value of the linear scale becomes hb, as shown in Figure 12(c), the height of the barrel clamp 421 increases by (△h=hb-ha).

The landing detection sensor 417 can detect the height while holding the die D. In addition, the clamp height is calculated based on the corrected drop amount calculated in step S26. If there is a deviation between the clamp height measured by the flow sensor and the clamp height measured by the landing detection sensor, it is possible to calibrate the specific interval (do). This calibration can also be performed periodically.

In order to make this embodiment more clear, FIG13 is used for explanation of the comparative example. FIG13 is a diagram showing the height of the bonding head in the teaching action of picking in the comparative example.

Steps S11 to S13 in the comparison example are the same as the teaching actions before production starts. The following is an explanation of the differences from the teaching actions before production starts.

(Step S54)

After a certain period of time, the control unit 80 closes the valve 485 and opens the valve 483 to start the suction of gas (step S541).

The control unit 80 lowers the bonding head 41 by a specific amount (△z1) (step S542), and measures the flow rate (FR) sucked by the barrel clamp 421 by the flow sensor 482 (step S543). The specific amount (△z1) is, for example, 10μm.

The control unit 80 confirms the flow rate (FR) detected by the flow sensor 482 and whether the flow rate (FR) is below a specific critical value (FRt) (step S544). The critical value (FRt) is a value that is set in advance as a value that is considered to be the value at which the lower end surface 421a of the collet 421 contacts the die D.

The control unit 80 repeats the processing of steps S542 to S544 until the flow rate (FR) becomes below the critical value (FRt).

After the flow measurement is completed, the control unit 80 closes the valve 483 and stops suction (step S545).

The control unit 80 stores the offset of the Z axis 472 from the mechanical origin in the Z direction in the height (pickup height (h5)) of the lower end surface 421a of the collet 421 when the flow rate (FR) becomes below the critical value (FRt) in the memory of the control unit 80 as the pickup height information (PHD) (step S546).

(Step S55)

The control unit 80 raises the bonding head 41 to a height (h3') that is only a specific distance higher than the pickup height (h5). The height (h3') is the height of the lower end surface 421a of the collet 421 when the detailed search starts. The height (h3') is lower than the starting height (h2) of the low-speed descent.

(Step S56)

The control unit 80 closes the valve 485 and opens the valve 483 to start the suction of gas (step S561).

The control unit 80 lowers the bonding head 41 by a specific amount (△z1) (step S562), and measures the flow rate (FR) sucked by the barrel clamp 421 by the flow sensor 482 (step S563). The specific amount (△z1) is, for example, 2μm.

The control unit 80 confirms the flow rate (FR) detected by the flow sensor 482 and whether the flow rate (FR) is below a specific critical value (FRt) (step S564). The critical value (FRt) is a value that is set in advance as a value that is considered to be the value at which the lower end surface 421a of the collet 421 contacts the die D.

The control unit 80 repeats the processing of steps S562 to S564 until the flow rate (FR) becomes below the critical value (FRt).

The control unit 80 stores the offset of the Z axis 472 from the mechanical origin in the Z direction in the height (pickup height (h5)) of the lower end surface 421a of the collet 421 when the flow rate (FR) becomes below the critical value (FRt) in the memory of the control unit 80 as the pickup height information (PHD) (step S565).

(Step S57)

The control unit 80 picks up the die D through the bonding head 41.

In the comparative example, the descent of the joint head 41 and the flow measurement are divided into a rough search (step S54) and a fine search (step S56) and performed twice. In contrast, in the implementation form, after descending to a certain height (step S24), the flow measurement is performed only once (step S24). After that, only the correction value obtained from the relevant data is decreased (step S26). Since the number of flow measurements in the implementation form is very small compared to the comparative example, the descent time of the joint head 41 is shortened, and the picking time is also shortened.

If implemented, one or more of the following effects can be obtained.

(a) It can shorten the high teaching time caused by the flow sensor in continuous operation (in production).

(b) By saving relevant data for each type of barrel clamp (size, hole diameter, etc.) corresponding to the product type, for example, each time the barrel clamp is replaced, there is no need to create relevant data due to the height teaching action before the start of production. This is because even if there is a height deviation during barrel clamp manufacturing, the height can be corrected through the teaching during picking.

(c) By teaching each time the pick-up is performed, high-precision landing detection due to flow rate can be performed in a relatively short time. In this way, there is no need to slow down the descent speed of the bonding head before landing (to about 1/10 of the above-mentioned low-speed descent) to reduce the impact at the time of landing. Therefore, the processing time can also be reduced.

(d) By confirming the detection position of the landing detection sensor mounted on the bonding head, the landing detection sensor can be calibrated using the height detection data caused by the flow rate detected at that position during picking.

(e) The landing detection sensor can be calibrated regularly through the above (d). In this way, the sensitivity deviation of the landing detection sensor can be calibrated regularly without affecting the yield, and stable bonding can be performed over time.

(f) The height detection data caused by the flow rate detected during picking can be used to provide feedback on the landing position during bonding. In this way, the height accuracy during bonding can be stably implemented to reduce the impact load. Due to the installation state of the clamp or changes over time, the distance between the lower end face of the clamp and each platform may deviate. However, the position of the surface of the pickup platform (wafer holding platform, intermediate platform) or the bonding platform is known. Moreover, since the distance between the lower end face of the clamp and the surface of the pickup platform can be accurately known, the position of the lower end face of the clamp and the surface of the bonding platform can also be accurately known. That is, since the height of the clamp can be precisely controlled, the impact during bonding can be prevented.

Although the invention created by the inventor is specifically described above based on the implementation form, the invention is not limited to the above implementation form and various changes can be made.

For example, in the embodiment, although the example of teaching the picking height based on the suction flow rate from the barrel clamp is described, it is also possible to teach the picking height based on the gas flow rate ejected from the barrel clamp.

In the implementation form, although the example of using a flow sensor for teaching during picking is described, it is also possible to use a flow sensor and a landing detection sensor together.

Furthermore, in the embodiment, an example of a bonding head that picks up a die from the intermediate platform and bonds it to a substrate held on the bonding platform is described. This is not limited to this, and it can also be applied to a pick-up head that picks up a die from a wafer holding table and places it on the intermediate platform. In this case, the wafer holding table is the first platform, and the intermediate platform is the second platform.

In the implementation form, an example is given in which a die picked up from a wafer is placed on an intermediate platform by a pickup head, and a die is picked up from the intermediate platform by a bonding head. This is not limited to this, and can also be applied to direct bonding of a die picked up from a wafer by a bonding head to a substrate without a pickup head and an intermediate platform. In this case, the wafer holding platform is the first platform, and the bonding platform is the second platform.

Furthermore, in the embodiment, although DAF is pasted on the back of the wafer, it can also be other than DAF.

Furthermore, in the implementation form, although there is one pickup head and one bonding head respectively, it is also possible to have two or more of each.

In the implementation form, although a die bonder is used as an example for explanation, it can also be applied to flip chip bonders and chip mounters.

D: Grain

d: distance

31: Middle platform (platform)

41: Joint head (head)

42: Collet clamp

47:Z drive unit

48: Vacuum suction system

411: Movable part

412: Ball bearing sleeve

412a: Opening

413: Contact piece

414: Head support

414a: Sensor support department

414b: Opening

416: Compression spring

417: Landing detection sensor

417a: Lower end surface

421: Collet

421a: Lower end surface

422: Collet support

471: Platform

472:Z axis

481: Piping

482:Flow sensor

483: Valve body

484: Piping

485: Valve body

Claims (11)

A semiconductor manufacturing device comprises: a platform for holding a crystal grain; a head for providing a barrel clamp having a suction hole for adsorbing the crystal grain; a flow sensor for providing a pipe connected to the suction hole; and a control device for obtaining, before production, the distance between the lower end surface of the barrel clamp and the upper surface of the crystal grain held on the platform, and data related to the flow rate of the gas flowing through the suction hole of the barrel clamp detected by the flow sensor. The control device is configured to lower the lower end surface of the barrel clamp from the upper surface of the crystal grain held on the platform to a first specific height. At the first specific height, the flow rate of the gas flowing through the suction hole of the barrel clamp is detected by the flow sensor. Based on the above relevant data and the flow rate detected at the above first specific height, a teaching action is performed to find the descent amount for the lower end surface of the above collet to land on the top of the grain held by the above platform. A semiconductor manufacturing device as claimed in claim 1, wherein the control device is configured to perform the teaching action during production. A semiconductor manufacturing device as claimed in claim 1, wherein the control device is configured to, before production, set the lower end surface of the collet to a second specific height higher than the first specific height from the top of the crystal grain held by the platform, and to lower the lower end surface of the collet from the second specific height to the height above the crystal grain held by the platform, and then to rise to the first specific height again, to perform a teaching action to obtain the above-mentioned relevant data. A semiconductor manufacturing device as claimed in claim 1, wherein the control device is configured to perform the teaching action at each specific number of picking actions. The semiconductor manufacturing device of claim 1, wherein a second platform is further provided, which is a substrate for carrying the above-mentioned die or the above-mentioned die. A semiconductor manufacturing device as claimed in claim 5, wherein the control device is configured to calculate the amount of descent for the lower end surface of the clamp to land on the substrate, the die placed on the substrate, or the second platform based on the flow rate detected in the relevant data and the first specific height. A semiconductor manufacturing device as claimed in claim 5, wherein the platform is a wafer holding portion, the second platform is a bonding platform, and the head is a bonding head. A semiconductor manufacturing device as claimed in claim 1, wherein the head is provided with a landing detection sensor, and the control device is configured to confirm the detection position of the landing detection sensor based on the relevant data and the flow rate detected at the first specific height. A semiconductor manufacturing device as claimed in claim 1, wherein the head is provided with a landing detection sensor, and the control device is further configured to measure the height of the clamp by means of the landing detection sensor during the teaching operation. A semiconductor manufacturing device as claimed in claim 1, wherein the control device is configured to detect the flow rate of the gas ejected from the suction hole of the clamp by means of the flow sensor. A method for manufacturing a semiconductor device, comprising: a process of moving a wafer into a semiconductor manufacturing device, the semiconductor manufacturing device having: a platform, which holds a crystal grain; a head, which is provided with a barrel clamp having a suction hole for adsorbing the crystal grain; a flow sensor, which is provided in a pipe connected to the suction hole; and a control device, which is configured to obtain the distance between the lower end surface of the barrel clamp and the upper surface of the crystal grain held on the platform before production, and the flow rate of the gas flowing in the suction hole of the barrel clamp detected by the flow sensor; and The lower end surface of the collet is lowered from the top of the crystal grain held by the platform to a first specific height. At the first specific height, the flow rate of the gas flowing in the suction hole of the collet is detected by the flow sensor. Based on the relevant data and the flow rate detected at the first specific height, the amount of descent for the lower end surface of the collet to land on the top of the crystal grain held by the platform is calculated.

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