TWI870919B - Semiconductor manufacturing device and semiconductor device manufacturing method - Google Patents

Abstract

[Topic] To provide a technology capable of confirming the state of chip peeling during production in a semiconductor manufacturing device. [Solution] A semiconductor manufacturing device comprises a peeling unit disposed below a dicing tape, a camera disposed below the dicing tape and near the peeling unit, and a control device. The control device is configured to peel the dicing tape from at least a portion of the chip by the peeling unit, and to obtain an image by the camera penetrating the dicing tape and photographing the back side of the chip from which the dicing tape has been peeled, and to confirm the state of chip peeling from the dicing tape based on the image.

Description

Semiconductor manufacturing device and semiconductor device manufacturing method

This disclosure relates to a semiconductor manufacturing device, which can be applied to a die bonder for performing tasks such as confirming the state of die peeling.

Semiconductor manufacturing devices such as die bonders are devices that use bonding materials to bond (mount and bond) components such as components to substrates or components. Bonding materials are, for example, liquid or film-like resins or solders. Components are, for example, semiconductor chips, MEMS (Micro Electro Mechanical System) and glass chips, etc., and die or electronic parts. Substrates are, for example, wire frames formed of wiring boards or metal sheets, glass substrates, etc.

For example, in the die bonding process by the die bonder, there is a process of peeling the die separated from the semiconductor wafer (hereinafter referred to as the wafer) from the dicing tape. The dicing tape is held on the wafer ring and carried into the die bonder. In the peeling process, the die is pushed up from the back of the dicing tape by the push-up unit, and the die is peeled one by one from the dicing tape held in the wafer supply unit, and picked up using a suction nozzle provided on the pickup head or the collet of the bonding head.

[Prior Art Literature] [Patent Literature]

[Patent Document 3] Japanese Patent Publication No. 2021-158166

In order to stabilize the pickup, it is required to manage the amount of the die peeled off from the dicing tape. For example, in the case where the die is peeled off from the dicing tape by a peeling unit such as a push-up unit, the state of the die peeled off from the die dicing tape (die peeling state) is confirmed, and a wafer ring with a dicing tape holding the peeled die is unloaded from a semiconductor manufacturing device. In addition, there is a case where the back side of the die is photographed to confirm the state of the die peeling.

The subject of this disclosure is to provide a technology that can confirm the state of chip peeling in a semiconductor manufacturing device. Other topics and novel features can be understood from the description of this manual and the attached drawings.

If we briefly explain the outline of the representative contents of this disclosure, it is as follows.

That is, the semiconductor manufacturing device has a peeling unit disposed below the dicing tape, a camera disposed below the dicing tape and near the peeling unit, and a control device. The control device is configured to peel the dicing tape from at least a portion of the die by the peeling unit, and to obtain an image by the camera penetrating the dicing tape and photographing the back of the die from which the dicing tape has been peeled, and to confirm the peeling state of the die from the dicing tape based on the image.

According to this disclosure, the state of chip peeling can be confirmed in a semiconductor manufacturing device.

1: Die bonder (semiconductor manufacturing equipment)

12: Wafer holding table

13: Stripping unit

15: Downward-looking camera (camera)

80: Control unit (control device)

D: Grain

Dp: peeling grain

W: Wafer

WR: Wafer Ring

[Figure 1] is a schematic top view showing an example of the structure of a die bonder in an implementation form.

[Figure 2] is a diagram showing the schematic structure viewed from the direction of arrow A in Figure 1.

[Figure 3] is a schematic cross-sectional view showing the main parts of the wafer supply unit shown in Figure 1.

[Figure 4] is a flow chart showing a method for manufacturing a semiconductor device using the die bonder shown in Figure 1.

[Figure 5(a)] is a schematic top view of the peeling unit shown in Figure 3. [Figure 5(b)] is a cross-sectional view of an important part of the peeling unit shown in Figure 5(a) in a state connected to the cutting tape. [Figure 5(c)] is a cross-sectional view of an important part of the peeling unit shown in Figure 5(a) in a state where the block is pushed up.

[Figure 6] is a diagram showing the main structure and peeling state of the wafer supply unit shown in Figure 3.

[Figure 7(a)] is a diagram showing a peeling unit in the second state and a picture showing a case where the grain peeling is not sufficient. [Figure 7(b)] is a diagram showing a peeling unit in the second state and a picture showing a case where the grain peeling is sufficient.

[Figure 8(a)] is a picture showing the situation of uneven grain peeling. [Figure 8(b)] is a picture showing the situation of the unpeeled area being offset in the x direction. [Figure 8(c)] is a picture showing the situation of the unpeeled area being offset in the y direction. [Figure 8(d)] is a picture showing the situation of the unpeeled area being offset in the θ direction.

[Figure 9] is a diagram showing the main structure of the wafer supply unit in the first variant.

[Figure 10(a)] is a top view showing the main structure of the wafer supply unit in the second variant. [Figure 10(b)] is a cross-sectional view showing the main structure of the wafer supply unit in the second variant.

[Figure 11] is a diagram showing the main structure of the wafer supply unit in the third variant.

The following uses drawings to explain the implementation and variants. However, in the following description, the same components are given the same symbols and repeated descriptions are omitted. In addition, in order to make the description clearer, the width, thickness, shape, etc. of each part are schematically represented in the drawings compared to the actual state. Furthermore, even between multiple drawings, the relationship between the dimensions of each element and the ratio of each element do not necessarily have to be consistent.

The structure of a die bonder as one embodiment of a semiconductor manufacturing device is described using FIGS. 1 to 3. FIG. 1 is a schematic top view showing an example of the structure of a die bonder in an embodiment. FIG. 2 is a schematic diagram showing the schematic structure viewed from the direction of arrow A in FIG. 1. FIG. 3 is a schematic cross-sectional view showing the main parts of the wafer supply unit shown in FIG. 1.

The die bonder 1 generally comprises a wafer supply unit 10, a pickup unit 20, an intermediate platform unit 30, a bonding unit 40, a transport unit 50, a substrate supply unit 60, a substrate unloading unit 70 and a control unit (control device) 80. The Y direction is the front-to-back direction of the die bonder 1, the X direction is the left-to-right direction, and the Z direction is the up-down direction. The wafer supply unit 10 is arranged at the front side of the die bonder 1, and the bonding unit 40 is arranged at the rear side.

The wafer supply unit 10 has a wafer cassette lifter 11, a wafer holding table 12, a stripping unit 13, a wafer recognition camera 14, and a downward-looking camera 15.

The wafer cassette lifter 11 moves the wafer cassette (not shown) storing multiple wafer rings WR up and down to the wafer transfer height. The wafer correction chute (not shown) aligns the wafer ring WR supplied from the wafer cassette lifter 11. The wafer lifter (not shown) takes out the wafer ring WR from the wafer cassette and supplies it to the wafer holding table 12, or takes it out from the wafer holding table 12 and stores it in the wafer cassette.

The wafer holding table 12 has an expansion ring 121 for holding the wafer ring WR, and a support ring 122 for horizontally positioning the dicing tape DT held on the wafer ring WR. The peeling unit 13 and the downward-looking camera 15 are arranged on the inner side of the support ring 122.

The wafer W is bonded (pasted) on the dicing tape DT, and the wafer W is divided into a plurality of dies D. The dicing tape DT is transparent to visible light. A thin film adhesive material DF called a die attach film (DAF) is pasted between the wafer W and the dicing tape DT. The adhesive material DF is hardened by heating.

The wafer holding table 12 is moved in the XY direction by a driving unit not shown in the figure, so that the picked-up die D is moved to the position of the peeling unit 13. Furthermore, the wafer holding table 12 rotates or moves the wafer ring WR in the XY plane by a driving unit not shown in the figure. The peeling unit 13 is moved in the up and down direction by a driving unit not shown in the figure. The peeling unit 13 peels the die D from the dicing tape DT.

The wafer recognition camera 14 is used to grasp the pick-up position of the die D picked up from the wafer W, or to perform surface inspection of the die D. The downward-looking camera 15 is used to confirm the state of the die peeling.

The pickup unit 20 has a pickup head 21 and a Y drive unit 23. A barrel clamp 22 is provided at the front end of the pickup head 21 to absorb and hold the peeled grain D. The pickup head 21 picks up the grain D from the wafer supply unit 10 and places it on the intermediate platform 31. The Y drive unit 23 moves the pickup head 21 in the Y-axis direction. The pickup unit 20 has various drives (not shown) that lift, rotate, and move the pickup head 21 in the X-direction.

The intermediate platform portion 30 has an intermediate platform 31 for placing the crystal grain D, and a platform recognition camera 34 for identifying the crystal grain D on the intermediate platform 31. The intermediate platform 31 has a suction hole for adsorbing the placed crystal grain D. The placed crystal grain D is temporarily held on the intermediate platform 31. The intermediate platform 31 is a placing platform for placing the crystal grain D, and is also a picking platform for picking up the crystal grain D.

The bonding section 40 includes a bonding head 41, a Y drive section 43, a substrate recognition camera 44, and a bonding platform 46. A barrel clamp 42 for adsorbing and holding the die D is provided at the front end of the pickup head 41. The Y drive section 43 moves the bonding head 41 in the Y-axis direction. The substrate recognition camera 44 photographs a position recognition mark (not shown) of the substrate S to recognize the bonding position. Here, multiple product areas (hereinafter referred to as package areas P) that become the final package body are formed on the substrate S. Position recognition marks are provided on each of the package body areas P. The bonding platform 46 is raised when the die D is placed on the substrate S to support the substrate S from below. The bonding platform 46 has a suction port (not shown) for vacuum adsorption of the substrate S, which can fix the substrate S. The bonding platform 46 has a heating part (not shown) for heating the substrate S. The bonding part 40 has various driving parts (not shown) for lifting, rotating and moving the pickup head 41 in the X direction.

With such a structure, the bonding head 41 corrects the pickup position or posture according to the imaging data of the platform recognition camera 34, and picks up the die D from the middle platform 31. Moreover, the bonding head 41 is bonded to the package area P of the substrate S according to the imaging data of the substrate recognition camera 44, or is bonded in the form of stacking on the die that has been bonded to the package area P of the substrate S.

The transport section 50 has a transport claw 51 for grabbing and transporting the substrate S and a transport channel 52 for moving the substrate S. The substrate S is moved in the X direction by using a ball screw (not shown) provided along the transport channel 52 to drive a nut (not shown) provided on the transport claw 51 of the transport channel 52. With such a structure, the substrate S is moved from the substrate supply section 60 along the transport channel 52 to the bonding position, and after bonding, it is moved to the substrate removal section 70, and the substrate S is handed over to the substrate removal section 70.

The substrate supply unit 60 takes out the substrate S stored in the transport jig and carried in from the transport jig and supplies it to the transport unit 50. The substrate unloading unit 70 stores the substrate S carried by the transport unit 50 in the transport jig.

The control unit 80 has a memory device for storing programs (software) for monitoring and controlling the operations of various parts of the die bonder 1 and storing data, a central processing unit (CPU) for executing the programs stored in the memory device, and an input-output device (not shown). The input-output device includes an image capture device (not shown), a motor control device (not shown), and an I/O signal control device (not shown). The image capture device captures image data from the wafer recognition camera 14, the downward-looking camera 15, the stage recognition camera 34, and the substrate recognition camera 44. The motor control device controls the drive unit of the wafer supply unit 10, the drive unit of the pickup unit 20, the drive unit of the bonding unit 40, etc. The I/O signal control device is a signal unit that captures various sensor signals or controls the switches of lighting devices, etc.

A part of the manufacturing process of a semiconductor device using the die bonder 1 (the manufacturing method of the semiconductor device) is described using FIG. 4. FIG. 4 is a flow chart showing the manufacturing method of a semiconductor device using the die bonder shown in FIG. 1. In the following description, the actions of the various parts constituting the die bonder 1 are controlled by the controller 80.

(Wafer loading process: Process S1)

The wafer ring WR is supplied to the wafer cassette of the wafer cassette lifter 11. The supplied wafer ring WR is supplied to the wafer holding table 12. In addition, the wafer W is inspected in advance for each die by an inspection device such as a probe, and wafer image data indicating whether the die is good or bad is generated. The wafer image data is stored in the storage device of the control unit 80.

(Substrate loading project: Project S2)

The transport jig storing the substrate S is supplied to the substrate supply unit 60. In the substrate supply unit 60, the substrate S is taken out from the transport jig and fixed to the transport claw 51.

(Pickup Project: Project S3)

After process S1, the wafer holding table 12 is moved in such a way that the desired die D can be picked up from the dicing tape DT. The die D is photographed by the wafer recognition camera 14, and the positioning and surface inspection of the die D are performed based on the image data obtained by the photography. By performing image processing on the image data, the offset (X, Y, θ direction) of the die D on the wafer holding table 12 from the die position reference point of the die support is calculated for positioning. In addition, the die position reference point is a specific position of the wafer holding table 12 that is maintained as the initial setting of the device in advance. By performing image processing on the image data, the surface inspection of the die D is performed.

The positioned die D is peeled off from the dicing tape DT by the peeling unit 13 and the pickup head 21. The die D peeled off from the dicing tape DT is adsorbed and held on the cartridge provided on the pickup head 21, and is transported to the intermediate platform 31 and placed thereon.

The platform recognition camera 34 is used to photograph the grain D on the intermediate platform 31. Based on the image data obtained by the photography, the grain D is positioned and inspected on the surface. By processing the image data, the offset (X, Y, θ directions) of the grain D on the intermediate platform 31 from the grain position reference point of the grain bonder is calculated for positioning. In addition, the grain position reference point is a specific position of the intermediate platform 31 that is maintained as the initial setting of the device in advance. By processing the image data, the surface of the grain D is inspected.

The pick-up head 21 that transports the die D to the intermediate platform 31 returns to the wafer supply unit 10. According to the above sequence, the next die D is peeled off from the dicing tape DT, and according to the same sequence thereafter, the die D is peeled off from the dicing tape DT one by one.

(Jointing project: Project S4)

The substrate S is transported to the bonding platform 46 by the transport unit 50. The substrate S placed on the bonding platform 46 is photographed by the substrate recognition camera 44, and image data is obtained by photography. The image data is processed by image processing to calculate the offset (X, Y, θ direction) of the substrate S from the substrate position reference point of the die bonder 1. In addition, the substrate position reference point is maintained by presetting the specific position of the bonding unit 40 as the initial setting of the device.

The die D is adsorbed by the clamp 42 by correcting the adsorption position of the bonding head 41 from the offset of the die D on the intermediate platform 31 calculated in process S3. The die D is bonded to a specific location of the substrate S supported on the bonding platform 46 by the bonding head 41 adsorbing the die D from the intermediate platform 31. Here, the specific location of the substrate S is the package area P of the substrate S, or the area where all components are placed and components are bonded in other forms, or the bonding area of stacked components. The die D bonded to the substrate S is photographed by the substrate recognition camera 44, and the image data obtained by the photography is used to check whether the die D is bonded to the desired location.

The bonding head 41 that bonded the die D to the substrate S returns to the intermediate platform 31. According to the above sequence, the next die D is picked up from the intermediate platform 31 and bonded to the substrate S. This is repeated, and the die D is bonded to all the package areas P of the substrate S.

(Substrate removal project: Project S5)

The substrate S to which the die D is bonded is transported to the substrate unloading unit 70. In the substrate unloading unit 70, the substrate S is taken out from the transport claw 51 and stored in the transport jig. The transport jig storing the substrate S is unloaded from the die bonder 1.

As described above, the die D is mounted on the substrate S and removed from the die bonder 1. Afterwards, the transport fixture storing the substrate S with the die D mounted thereon is transported to the wire bonding process, and the electrode of the die D is electrically connected to the electrode of the substrate S via Au wires, etc. Furthermore, the substrate S is transported to the molding process, where the die D and the Au wire are sealed with a molding resin (not shown), thereby completing the semiconductor package.

In the case of stacking bonding, following the wire bonding process, the substrate S on which the die D is mounted is loaded and stored and the transport jig is moved into the die holder to stack the die D on the die D mounted on the substrate S. Moreover, after being moved out of the die bonder, in the wire bonding process, the die D is electrically connected to the electrode of the substrate S via the Au wire. The die D above the second section is peeled off from the dicing tape DT in the above method, and then transported to the bonding part to be stacked on the die D. After the above process is repeated a certain number of times, the substrate S is transported to the molding process, and a plurality of die D and Au wires are sealed with a molding resin (not shown), thereby completing the stacking seal.

The structure and operation of the peeling unit 13 are explained using Figures 5(a) to 5(c). Figure 5(a) is a schematic top view of the peeling unit shown in Figure 3. Figure 5(b) is a cross-sectional view of an important part of the peeling unit shown in Figure 5(a) in a state connected to the cutting tape. Figure 5(c) is a cross-sectional view of an important part of the peeling unit shown in Figure 5(a) in a state where the block is pushed up.

As shown in FIG. 5(a), the stripping unit 13 has a block portion 131 having a plurality of blocks 131a to 131d, and a hemispherical head 132 having a plurality of suction holes (not shown) for adsorbing the dicing tape DT. The four blocks 131a to 131d can move up and down independently by the control unit 80. The top view shape of the concentric quadrilateral blocks 131a to 131d is configured to match the shape of the grain D.

The picking action is to position the target die D on the cutting tape DT on the stripping unit 13, starting from the positioning of the collet 22 of the pickup head 21 on the die D. As shown in Figure 5(b), once the positioning is completed, vacuum is drawn through the unillustrated suction holes and gaps of the stripping unit 13, and the cutting tape DT is adsorbed on the stripping unit 13. At this time, the top of the blocks 131a~131d is at the same height as the top of the hemispherical head 132 (initial position). In this state, vacuum is supplied from the vacuum supply source, and the collet 22 descends toward the device surface (top) of the die D while vacuuming, and lands on the top of the die D.

Afterwards, blocks 131a~131d are pushed up at the same time, and the stripping unit 13 is set to the first state (PU1). The first state (PU1) is a state in which blocks 131a~131d are in contact with the cutting tape DT. Afterwards, blocks 131a~131d are further pushed up at the same time, and the stripping unit 13 is set to the second state (PU2). The second state (PU2) is a state in which blocks 131a~131d are in contact with the cutting tape DT. Afterwards, blocks 131c and 131d are further pushed up at the same time, and the stripping unit 13 is set to the third state (PU3). The third state (PU3) is a state in which blocks 131c and 131d are in contact with the cutting tape DT. Afterwards, as shown in FIG. 5(c), the block 131d is pushed up and the block portion 131 is set to a pyramid shape, and the peeling unit 13 is set to the fourth state (PU4). The fourth state (PU4) is a state where the block 131d abuts against the cutting tape DT. In this disclosure, this action is referred to as the MS (Multi Step) action.

In addition to the above-mentioned MS action, the peeling unit 13 can also perform the following actions. Blocks 131a~131d are pushed up at the same time, and the peeling unit 13 is set to the first state (PU1). The first state (PU1) is a state in which blocks 131a~131d are in contact with the cutting tape DT. Thereafter, block 131a descends, and the peeling unit 13 is set to the second state (PU2). The second state (PU2) is a state in which blocks 131b~131d are in contact with the cutting tape DT. Thereafter, block 131b descends, and the peeling unit 13 is set to the third state (PU3). The third state (PU3) is a state in which blocks 131c and 131d are in contact with the cutting tape DT. Afterwards, the block 131c is lowered and the block portion 131 is set to a pyramid shape, and the stripping unit 13 is set to the fourth state (PU4). The fourth state (PU4) is a state in which the block 131d abuts against the cutting tape DT. In this disclosure, this action is referred to as the RMS (Reverse Multi Step) action.

During the MS action or RMS action, the die D is maintained in a state of being clamped by the barrel clamp 22 and the whole or part of the block portion 131. The block portion 131 is set to a pyramid shape, etc., and by setting a step between multiple blocks, the dicing tape DT is peeled off from the die D by the tension of the dicing tape DT. In the state shown in FIG. 5(c), the dicing tape DT is bonded to the die D only at the place where the block 131d abuts against the dicing tape DT.

Afterwards, the collet 22 is pushed upward, and at the same time, the block 131d is pulled down, and the die D is completely peeled off from the dicing tape DT and picked up.

The first state (PU1), the second state (PU3) and the fourth state (PU4) in the MS action and the RMS action are performed by the multiple step actions of the stripping unit 13. According to the timing diagram recipe (pickup recipe), the control unit 80 drives the motors of each block 131a~131d respectively. Here, in the timing diagram recipe, the action of each block 131a~131d is set for each block and each step by the time of the step, the speed of the block's rise or fall, the height (position) of the block, etc. In this way, the stripping unit 13 performs the step action.

The confirmation of the chip peeling state of the wafer supply unit is explained using Figures 2, 5(b), 5(c) and 6. Figure 6 is a diagram showing the main structure of the wafer supply unit shown in Figure 3 and an example of the chip peeling state. The x-axis and y-axis shown in the image IM in Figure 6 correspond to the X-axis and Y-axis of the chip bonder 1.

As shown in FIG. 2 , the downward camera 15 is fixed and arranged within the movable range of the wafer holding table 12 beside the peeling unit 13 without interfering with the peeling unit 13. The downward camera 15 is arranged upward in a manner to photograph the upper part thereof, and its optical axis is along the Z direction. The photography is preferably performed using oblique light illumination that irradiates the illumination light from a direction inclined relative to the optical axis of the downward camera 15.

In this embodiment, the die peeling state is confirmed when the conditions of the device are set before the die bonder 1 is continuously operated (before production starts). Alternatively, during the continuous operation of the die bonder 1 (during production), for example, when a new wafer ring WR is loaded on the wafer holding table 12, the die peeling state is confirmed. In addition, during the continuous operation, even between the above-mentioned process S1 and process S3, the die peeling state may be confirmed for each loading of the wafer ring WR, and even for multiple loadings of the wafer ring WR, it may be performed at a ratio of once. The multiple times may be a specific number of times, or an arbitrary number of times. Furthermore, in the continuous operation, it is better to use the die that is set as defective by the wafer mapping data to confirm the die peeling state. In this case, it is better to use the die that is not located at the end of the wafer to confirm the die peeling state. The sequence is explained below.

First, the control unit 80 sets the peeling unit 13 to the fourth state (PU4) by, for example, the above-mentioned picking action, as shown in FIG. 5(c), and pushes up the block portion 131 to partially peel off the dicing tape DT from the die D.

Next, the control unit 80 returns the stripping unit 13 from the fourth state (U4) shown in FIG. 5(c) to the initial state shown in FIG. 5(b).

Next, as shown in FIG6 , the control unit 80 causes the stripping unit 13 to retreat downward. Furthermore, the control unit 80 causes the wafer holding stage 12 to move upward, and places the die (stripped die Dp) partially stripped from the dicing tape DT above the downward-looking camera 15. In this case, the collet 22 of the pickup head 21 is also retreated upward.

Next, the control unit 80 uses the downward camera 15 to penetrate the dicing tape DT to photograph the peeled die Dp and obtain an image IM. The image IM includes an image of the peeling area PLD where the peeled die Dp is peeled from the dicing tape DT and the peeling marks of the unpeeled area UPL where the peeled die Dp is not peeled.

The above sequence enables confirmation of the die peeling status without receiving and sending out the wafer. Wafer receiving and sending out is to carry out or carry in the wafer ring WR holding the dicing tape DT with the peeled die Dp, etc. from the die bonder 1.

Next, the control unit 80 processes the image IM obtained by the downward camera 15 to separate the peeled area PLD and the unpeeled area UPL to confirm the state of the die peeling. For example, the control unit 80 confirms the state of the die peeling by the positional relationship between the four outer end portions OP of the outermost block in the block portion 131 that abuts against the dicing tape DT and the unpeeled area UPL.

By making the peeling unit 13 into the second state (PU2), the chip peeling state can be confirmed by the positional relationship between the four outer ends OP of the block 131b and the unpeeled area UPL. By making the peeling unit 13 into the third state (PU3), the chip peeling state can be confirmed by the positional relationship between the four outer ends of the block 131c and the unpeeled area UPL. By making the peeling unit 13 into the fourth state (PU4), the chip peeling state can be confirmed by the positional relationship between the four outer ends of the block 131d and the unpeeled area UPL.

As shown in FIG6 , the actual image IM is not an image with high contrast between the peeled area PLD and the unpeeled area UPL, but a light image with low contrast. Therefore, in the confirmation of the grain peeling state, the control unit 80 performs smoothing processing on the image IM. By smoothing processing, the image with noise removed is subjected to edge detection processing in the band area, and the peeled area PLD and the unpeeled area UPL are separated to detect the peeling mark.

As a smoothing process, one or more smoothing filters are applied. For example, when using a 5×5 filter or a 7×7 filter, it is sufficient to apply it once, but when using a 3×3 filter, it is better to apply it multiple times.

Edge detection in a strip area (strip edge detection) is not performed on one pixel, but on multiple pixels. Since edge detection is usually derived from the change in density on a straight line, the inspection range is one pixel, but in order to remove noise, when the edge length is quite long, there are also cases where the inspection range is set to multiple pixels and averaged. Therefore, it is effective when the target image is a rectangle. For each side, for example, 10 pixels of edges are detected, and each detected edge is extended to set a rectangular area. In addition, the shape of the unstripped area UPL is a rectangle that imitates the shape of the block when viewed from above.

After the control unit 80 confirms the state of the chip peeling, it can use the image IM to make an appropriate judgment of the picking recipe or to correct or warn the picking recipe itself. For this purpose, Figure 7(a) and Figure 7(b) are used for explanation. Figure 7(a) is a diagram showing the peeling unit in the second state and the image of the situation where the chip peeling is not sufficient. Figure 7(b) is a diagram showing the peeling unit in the second state and the image of the situation where the chip peeling is sufficient. In Figures 7(a) and 7(b), block 131a is located between the upper surface of the hemispherical head 132 and the upper surface of blocks 131b~131d.

As shown in FIG7(b), the control unit 80 determines that the peeling is complete (the grain peeling is sufficient) when the boundary between the peeling area PLD and the unpeeled area UPL is equal to or smaller than the periphery of the block formed by the four outer ends OP of the block abutting against the dicing tape DT.

As shown in FIG7(a), the control unit 80 determines that the grain peeling is insufficient when the boundary between the peeling area PLD and the unpeeled area UPL is larger than the periphery of the block. If the grain peeling is insufficient, the pick-up recipe may be corrected as shown below.

In the MS action, the height of the block before shooting and the time of the pickup timer are increased.

In the RMS action, increase the block height of the whole block in the step of setting the first state (PU1). Or, increase the block height of the block before the descent to be photographed (in Figure 7 (a)), the block height of block 131a). Or, increase the time of the timer. Or, even if these are combined.

In RMS motion, the recipe is selected based on the priority of high speed and low stress, and the correction of the recipe is selected based on this. In the case of giving priority to high speed, the push-up height is increased, or the time of the pick-up timer is reduced. Or, both are implemented. In the case of giving priority to low stress, the push-up height is reduced, or the time of the pick-up timer is increased. Or, both are implemented.

When the peeled area PLD (unpeeled area UPL) is non-uniform in the x, y, and θ directions, the control unit 80 can correct the position of the mechanism from the grain peeling state. For this purpose, Figures 8(a) to 8(d) are used for explanation. Figure 8(a) is a picture showing the situation of non-uniform grain peeling. Figure 8(b) is a picture showing the situation of the unpeeled area being deviated in the x direction. Figure 8(c) is a picture showing the situation of the unpeeled area being deviated in the y direction. Figure 8(d) is a picture showing the situation of the unpeeled area being deviated in the θ direction.

As shown in FIG8(a), when the position of the unpeeled area UPL is uneven relative to the block periphery OP (uneven grain peeling), the control unit 80 makes the height of the block where the area surrounded by the ellipse abuts the dicing tape DT lower than the setting. That is, it is judged that the block portion 131 is inclined upward. In this way, the normality of the block flatness can be diagnosed. In the case where the control unit 80 judges that it is the block portion 131, it is also possible to issue a warning.

When the size of the boundary portion of the peeled area PLD and the unpeeled area UPL is equal to the block periphery, the control unit 80 can confirm the positional offset of the block portion 131 with respect to the grain D. When the unpeeled area UPL is confirmed to be offset in the (+) direction of the y-axis relative to the original block periphery OPa as shown in FIG8(b), the control unit 80 determines that the block portion 131 is offset in the (+) direction of the Y-axis. When the unpeeled area UPL is confirmed to be offset in the (+) direction of the x-axis relative to the original block periphery OPa as shown in FIG8(c), the control unit 80 determines that the block portion 131 is offset in the (+) direction of the X-axis. The control unit 80 determines that the block portion 131 is offset in the (-) direction of the θ axis when the unpeeled area UPL is offset in the (-) direction of the θ axis relative to the original block periphery OPa as shown in FIG8(d). The control unit 80 calculates the position offsets and corrects the position relationship between the wafer holding table 12 and the peeling unit 13 based on the calculated position offsets. For example, the position or posture of the wafer holding table 12 may be corrected, or the position or posture of the peeling unit 13 may be corrected.

By using the implementation mode, the state of die peeling can be confirmed in semiconductor manufacturing equipment such as a die bonder. Thus, the quality of the pick-up recipe or the malfunction of the peeling unit can be judged based on the state of die peeling.

Furthermore, if the implementation is carried out, it is possible to confirm the die peeling during each stage of the multi-stage push-up caused by multiple blocks.

Furthermore, by optimizing the peeling conditions of the pickup formula during implementation, it is possible to prevent cracks or gaps in the die during pickup. In this way, it is possible to pick up thinner die. For example, in order to promote high-density mounting of semiconductor devices, a stacked package body that mounts multiple die three-dimensionally on a wiring substrate has been put into practical use. When assembling such a stacked package body, so-called thin die that has been processed and thinned to a thickness of tens of μm is used. It is possible to pick up such thin die.

[Variations]

Hereinafter, several representative variants of the implementation are exemplified. In the description of the following variants, for the parts having the same structure and function as those described in the above implementation, the same symbols as those in the above implementation are used. Moreover, for the description of such parts, the description in the above implementation can be appropriately cited within the scope of technical non-contradiction. Furthermore, within the scope of technical non-contradiction, one part of the above implementation and all or part of the multiple variants can be appropriately and complexly applied.

(First variant)

FIG9 is a diagram showing the main parts of the wafer supply unit in the first variant.

In the embodiment, an example of fixing the downward camera 15 is described. In contrast, in a second variant, the downward camera 15 is configured to be movable between a position above the peeling unit 13 and a position not interfering with the peeling unit 13. The control unit 80 causes the peeling unit 13 to retreat to a position below the downward camera 15 so as not to interfere with the downward camera 15, and moves the downward camera 15 itself to a position for peeling the grain Dp. The photography by the downward camera 15 is the same as that in the embodiment, and preferably, oblique light illumination is used to illuminate the illumination light from a direction inclined relative to the optical axis of the downward camera 15. Since the control unit 80 does not need to move the wafer holding table 12 to move the peeled die Dp, it is not necessary to retract the collet 22 of the pickup head 21 to the upper side. Accordingly, since the photography can be performed while the peeled die Dp is adsorbed by the collet 22, the peeled die Dp can be prevented from being attached to the dicing tape DT during the photography.

(Second variant)

FIG. 10(a) is a top view showing the main structure of the wafer supply unit in the second variant. FIG. 10(b) is a cross-sectional view showing the main structure of the wafer supply unit in the second variant. FIG. 10(a) shows the wafer supply unit without the dicing tape DT and the peeled die Dp.

The hemispherical head 132 of the peeling unit 13 in the second variant is made of a transparent material. Moreover, the optical axis of the downward camera 15 is tilted to the Z direction, and the downward camera 15 is set at a position to photograph the back of the peeled grain Dp from obliquely below. One downward camera 15 is arranged facing one side of the peeled grain Dp. In addition, even if the downward camera 15 is arranged facing the two adjacent sides of the peeled grain Dp, two downward cameras 15 can be arranged. Furthermore, even if the downward camera 15 is arranged facing the four sides of the peeled grain Dp, four downward cameras 15 can be arranged.

By such a configuration, even if the stripping unit 13 is not retracted to the bottom or the stripped die Dp is not released from the cartridge 22, the state of the stripped die Dp can be confirmed by pushing back on the block portion 131. Thus, the state of the stripped die Dp can be confirmed even during the picking operation in production. Furthermore, as in the first variant, photography can be performed while maintaining the state of the stripped die Dp being adsorbed by the cartridge 22, so that the stripped die Dp can be prevented from being attached to the dicing tape DT during photography.

(Third variant)

FIG11 is a diagram showing the main structure of the wafer supply unit in the third variant.

The hemispherical head 132 of the peeling unit 13 in the third variant is made of a transparent material. The downward camera 15 is also configured in the same manner as in the embodiment. Moreover, an optical reflection mechanism 16a such as a prism or a reflector is disposed above the downward camera 15 and below the cutting tape DT. The optical reflection mechanism 16a has a reflection surface of approximately 45 degrees relative to the optical axis of the downward camera 15. Moreover, the optical reflection mechanism 16b is disposed in the hemispherical head 132. The optical reflection mechanism 16b has an angle of less than 45 degrees relative to the upper surface of the hemispherical head 132. The downward camera 15 is disposed facing one side of the peeled grain Dp.

In addition, even if two downward-looking cameras 15 are arranged facing the two sides adjacent to the peeled grain Dp, two sets of optical reflection mechanisms 16a and 16b are provided corresponding to the two downward-looking cameras 15. Furthermore, even if four downward-looking cameras 15 are arranged facing the four sides of the peeled grain Dp, four sets of optical reflection mechanisms 16a and 16b are provided corresponding to the four downward-looking cameras 15.

By such a configuration, even if the stripping unit 13 is not retracted to the bottom or the stripped die Dp is not released from the cartridge 22, the state of the stripped die Dp can be confirmed by pushing back on the block portion 131. Thus, the state of the stripped die Dp can be confirmed even during the picking operation in production. Furthermore, as in the first variant, photography can be performed while maintaining the state of the stripped die Dp being adsorbed by the cartridge 22, so that the stripped die Dp can be prevented from being attached to the dicing tape DT during photography.

Although the invention created by the inventors is specifically described above based on the implementation forms and examples, the present disclosure is not limited to the above-mentioned implementation forms and examples, and various changes can be made.

For example, in the embodiment, although the example of four blocks is described, the number of blocks may be less than three or more than five depending on the grain size.

Furthermore, in the implementation form, although the multiple blocks of the peeling unit are described as being concentric, they may be concentric circles or concentric ellipses, or they may be arranged in parallel to form a quadrilateral block.

Furthermore, in the embodiment, although the example of peeling off by pushing up multiple blocks of the peeling unit is described, it is also possible to peel off by sliding the blocks.

Furthermore, in the embodiment, although the example of using a die attach film is described, it is also possible to set the pre-formed portion where the adhesive is applied to the substrate without using a die attach film.

Furthermore, in the embodiment, a die bonder is described for picking up a die from a wafer supply unit with a pickup head and placing it on an intermediate platform, and bonding the die placed on the intermediate platform to a substrate with a bonding head. However, the present invention is not limited to this, and can also be applied to a die bonding device that picks up a die from a die supply unit.

For example, it can also be applied to a die bonder that uses a bonding head to bond the die of a die supply unit to a substrate without an intermediate platform and a pickup head.

Furthermore, it can be applied to a flip chip bonder without an intermediate platform, picking up the die from the wafer supply unit, rotating the die pickup head above to transfer the die to the bonding head, and bonding the bonding head to the substrate.

In the implementation form, although a die bonder is used as an example for explanation, it can also be applied to a semiconductor manufacturing device that places the picked-up die on a tray.

10: Wafer supply department

13: Stripping unit

15: Downward-looking camera (camera)

131: Block

131a~131d: Block

132: Hemispherical head

80: Control unit (control device)

D: Grain

DT: cutting tape

Dp: peeling grain

IM: Portrait

PLD: peeling zone

OP: Outer end

UPL: Unpeeled Area

Claims (16)

A semiconductor manufacturing device comprises: a wafer holding table, which holds a wafer ring, and the wafer ring holds a dicing tape attached to a die separated from a wafer; a peeling unit, which is arranged below the dicing tape; a camera, which is arranged below the dicing tape held on the wafer holding table and near the peeling unit; and a control device, which is configured to peel the dicing tape from at least a portion of the die by the peeling unit during production, and to obtain an image by the camera penetrating the dicing tape to photograph the back side of the die from which the dicing tape has been peeled, and to confirm the peeling state of the die from the dicing tape based on the image. A semiconductor manufacturing device as claimed in claim 1, wherein the control device is configured to detect peeling marks on the image by smoothing and edge detection in a strip area. A semiconductor manufacturing device as claimed in claim 1, wherein the control device is configured to confirm the peeling state of the defective die from the dicing tape based on the wafer mapping data. As in claim 2, the semiconductor manufacturing device, wherein the control device is configured to correct the positional relationship between the wafer holding table and the peeling unit according to the peeling mark. A semiconductor manufacturing device as claimed in claim 2, wherein the control device is configured to issue a warning or set or modify the operating conditions of the peeling unit based on the peeling mark. The semiconductor manufacturing device of claim 2 further comprises an illumination device for irradiating illumination light at a specific angle relative to the optical axis of the camera. A semiconductor manufacturing device as claimed in claim 4 or 5, wherein the camera is arranged and fixed next to the peeling unit. A semiconductor manufacturing device as claimed in claim 7, wherein the control device is configured to move the die to above the camera, and the camera is used to photograph the die. The semiconductor manufacturing device of claim 8, wherein the stripping unit has a plurality of blocks that push up the die through the dicing tape, and the control device is configured to, after all of the plurality of blocks are pushed up, separate the plurality of blocks that are in contact with the dicing tape from the outside in sequence to separate the dicing tape from the die, and then lower the stripping unit after at least one of the plurality of blocks is separated from the dicing tape, and move the die to the top of the camera via the wafer holding table. A semiconductor manufacturing device as claimed in claim 4 or 5, wherein the control device is configured to lower the peeling unit and simultaneously move the camera to below the die, and photograph the die with the camera. As in claim 10, the semiconductor manufacturing device, wherein the stripping unit has a plurality of blocks that push up the die through the dicing tape, and the control device is configured to, after all of the plurality of blocks are pushed up, sequentially separate the plurality of blocks that abut against the dicing tape from the outside to separate the dicing tape from the die, so that the stripping unit is operated, and after at least one of the plurality of blocks is separated from the dicing tape, the stripping unit is lowered to move the camera below the die. The semiconductor manufacturing device of claim 1, wherein the peeling unit has a hemispherical head formed of a transparent material and in contact with the dicing tape, the camera is set at a position tilted from the upper and lower directions to photograph the back side of the die, and the control device is configured to photograph the back side of the die from which the dicing tape is peeled by the camera penetrating the hemispherical head and the dicing tape while maintaining the peeling unit in contact with the dicing tape. The semiconductor manufacturing device of claim 1, wherein a first optical reflection mechanism is further provided above the camera, the peeling unit has a hemispherical head formed of a transparent material and in contact with the dicing tape, and a second optical reflection mechanism is disposed in the hemispherical head, and the control device is configured to penetrate the dicing tape and photograph the back side of the die from which the dicing tape is peeled by the camera, the first optical reflection mechanism and the second optical reflection mechanism while maintaining the state in which the peeling unit is in contact with the dicing tape. A semiconductor manufacturing device comprises: a wafer holding table, which holds a wafer ring, and the wafer ring holds a dicing tape to which dies separated from a wafer are adhered; a peeling unit, which is arranged below the dicing tape; a camera, which is arranged below the dicing tape held on the wafer holding table and near the peeling unit; and a head, which has a function of sucking the dies. The chip clamp of the die; and the control device, which is configured to peel the dicing tape from at least a portion of the die by the peeling unit, and when the die is adsorbed by the chip clamp, the camera penetrates the dicing tape to photograph the back of the die from which the dicing tape is peeled to obtain an image, and confirm the peeling state of the die from the dicing tape based on the image. A method for manufacturing a semiconductor device includes: a loading process, which is to load a wafer ring into a semiconductor manufacturing device, wherein the semiconductor manufacturing device is equipped with: a wafer holding table, which holds the wafer ring, and the wafer ring holds a dicing tape to which the dies separated from the wafer are adhered; a peeling unit, which is arranged below the dicing tape; and a peeling unit, which is arranged below the dicing tape; and a camera, which is arranged below the dicing tape; The recognition process is to peel the dicing tape from at least a part of the die by the peeling unit, and to obtain an image by the camera penetrating the dicing tape to photograph the back of the die from which the dicing tape has been peeled, and to confirm the peeling state of the die from the dicing tape based on the image; the picking process is to pick up the die held by the wafer ring; and the bonding process is to bond the picked-up die to a substrate or a die that has been bonded to a substrate. The method for manufacturing a semiconductor device as claimed in claim 15, wherein the peeling confirmation process is to confirm the peeling state of the defective die from the dicing tape based on the wafer mapping data.

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