TWI872541B - Coating equipment - Google Patents
Coating equipment Download PDFInfo
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- TWI872541B TWI872541B TW112117861A TW112117861A TWI872541B TW I872541 B TWI872541 B TW I872541B TW 112117861 A TW112117861 A TW 112117861A TW 112117861 A TW112117861 A TW 112117861A TW I872541 B TWI872541 B TW I872541B
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- paddle
- reciprocating
- moving
- substrate
- coating
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- 238000000576 coating method Methods 0.000 title claims abstract description 177
- 239000011248 coating agent Substances 0.000 title claims abstract description 168
- 239000000758 substrate Substances 0.000 claims abstract description 118
- 239000007788 liquid Substances 0.000 claims abstract description 79
- 238000003756 stirring Methods 0.000 claims abstract description 29
- 230000000694 effects Effects 0.000 abstract description 8
- 230000005684 electric field Effects 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000007747 plating Methods 0.000 description 49
- 150000002500 ions Chemical class 0.000 description 38
- 230000007246 mechanism Effects 0.000 description 21
- 230000032258 transport Effects 0.000 description 13
- 238000004140 cleaning Methods 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000011068 loading method Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000001035 drying Methods 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101000827703 Homo sapiens Polyphosphoinositide phosphatase Proteins 0.000 description 1
- 102100023591 Polyphosphoinositide phosphatase Human genes 0.000 description 1
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000003014 ion exchange membrane Substances 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910003446 platinum oxide Inorganic materials 0.000 description 1
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- Coating Apparatus (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
本發明提供一種可縮小攪槳之梁構件引起遮蔽電場的影響之技術,或是可除去附著於離子阻力體之孔的氣泡之技術。鍍覆裝置1000具備攪槳70,其係以配置於陽極11與基板Wf之間,藉由在與基板平行之方向,於第一方向及第二方向往返移動來攪拌鍍覆液Ps之方式而構成,攪槳具有在與攪槳之往返移動方向垂直的方向延伸之複數個梁構件71,攪槳在第一方向及第二方向往返移動包含攪槳以第一往返樣態而往返移動,在第一往返樣態下,攪槳藉由以與在第一方向移動時之行程不同的行程在第二方向移動,而使攪槳從第二方向改變移動方向成第一方向時之複數個梁構件的位置;及從第一方向改變移動方向成第二方向時之複數個梁構件的位置不同。The present invention provides a technology for reducing the effect of shielding the electric field caused by the beam member of the paddle, or a technology for removing the air bubbles attached to the holes of the ion resistance body. The coating device 1000 is provided with a paddle 70, which is arranged between the anode 11 and the substrate Wf, and is constructed in a manner of stirring the coating liquid Ps by reciprocating in a first direction and a second direction in a direction parallel to the substrate. The paddle has a plurality of beam components 71 extending in a direction perpendicular to the reciprocating direction of the paddle. The reciprocating movement of the paddle in the first direction and the second direction includes the paddle reciprocating in a first reciprocating pattern. In the first reciprocating pattern, the paddle moves in the second direction with a stroke different from that when moving in the first direction, so that the positions of the plurality of beam components when the paddle changes the moving direction from the second direction to the first direction are different; and the positions of the plurality of beam components when the paddle changes the moving direction from the first direction to the second direction are different.
Description
本發明係關於一種鍍覆裝置。The present invention relates to a coating device.
過去,已知有可對基板實施鍍覆處理之鍍覆裝置(例如,參照專利文獻1)。此種鍍覆裝置具備:貯存鍍覆液,並且在前述鍍覆液之內部配置陽極,並在前述鍍覆液之內部,以與前述陽極相對之方式配置基板的鍍覆槽;及配置於陽極與基板之間,在與基板平行之方向,藉由於第一方向及與第一方向相反之第二方向往返移動來攪拌鍍覆液的方式而構成之攪槳。In the past, a coating device that can perform coating treatment on a substrate is known (for example, refer to Patent Document 1). This coating device comprises: a coating tank that stores a coating liquid, an anode is arranged inside the coating liquid, and a substrate is arranged inside the coating liquid in a manner opposite to the anode; and a stirring paddle that is arranged between the anode and the substrate and stirs the coating liquid by moving back and forth in a first direction and a second direction opposite to the first direction in a direction parallel to the substrate.
此外,過去,攪槳已知有具有在與攪槳之往返移動方向垂直的方向延伸之複數個梁構件者(例如,參照專利文獻1)。 [先前技術文獻] [專利文獻] In addition, in the past, a paddle having a plurality of beam members extending in a direction perpendicular to the reciprocating direction of the paddle has been known (for example, refer to Patent Document 1). [Prior Art Document] [Patent Document]
[專利文獻1]日本特開2021-130848號公報[Patent Document 1] Japanese Patent Application Publication No. 2021-130848
(發明所欲解決之問題)(Invent the problem you want to solve)
如上述之過去的鍍覆槽中,攪槳在往返移動時之攪槳的行程固定。此時,在攪槳從第二方向改變移動方向成第一方向時,及從第一方向改變移動方向成第二方向時,攪槳之梁構件係在相同部位停止。此時,在鍍覆處理中攪槳之梁構件的平均滯留時間無法均勻化,陽極與基板之間的電場之遮蔽程度可能依攪槳的位置而不同。結果,可能導致基板之鍍覆品質惡化。In the above-mentioned conventional plating tank, the stroke of the impeller is fixed when the impeller moves back and forth. At this time, when the impeller changes the moving direction from the second direction to the first direction, and when the impeller changes the moving direction from the first direction to the second direction, the beam member of the impeller stops at the same position. At this time, the average retention time of the beam member of the impeller during the plating process cannot be uniform, and the shielding degree of the electric field between the anode and the substrate may be different depending on the position of the impeller. As a result, the plating quality of the substrate may be deteriorated.
或是,過去之鍍覆裝置時,鍍覆槽之鍍覆液中所含的氣泡可能會大量附著於配置在陽極與基板之間的離子阻力體之孔。在該狀態下對基板實施鍍覆處理時,可能因該氣泡造成基板之鍍覆品質惡化。Alternatively, in conventional plating equipment, bubbles contained in the plating liquid in the plating tank may be attached in large quantities to the holes of the ion resistor disposed between the anode and the substrate. When the substrate is subjected to plating treatment in this state, the bubbles may cause the plating quality of the substrate to deteriorate.
本發明係鑑於上述情形者,一個目的為提供一種可縮小攪槳之梁構件引起遮蔽電場的影響之技術,或是可除去附著於離子阻力體之孔的氣泡之技術。 (解決問題之手段) (樣態1) The present invention is made in view of the above situation, and one of the purposes is to provide a technology that can reduce the effect of shielding the electric field caused by the beam member of the paddle, or a technology that can remove the bubbles attached to the holes of the ion resistance body. (Means for solving the problem) (Situation 1)
為了達成上述目的,本發明一個樣態之鍍覆裝置係具備:鍍覆槽,其係貯存鍍覆液,並且在前述鍍覆液之內部配置有陽極,並在前述鍍覆液之內部以與前述陽極相對之方式配置有基板;及攪槳,其係以配置於前述陽極與前述基板之間,並藉由在與前述基板平行之方向,於第一方向及與前述第一方向相反之第二方向往返移動來攪拌前述鍍覆液的方式而構成;前述攪槳具有複數個梁構件,其係在與前述攪槳之往返移動方向垂直的方向延伸,前述攪槳在前述第一方向及前述第二方向往返移動包含前述攪槳以第一往返樣態而往返移動,在前述第一往返樣態下,前述攪槳藉由以與在前述第一方向移動時之行程不同的行程在前述第二方向移動,而使前述攪槳從前述第二方向改變移動方向成前述第一方向時之前述複數個梁構件的位置;及從前述第一方向改變移動方向成前述第二方向時之前述複數個梁構件的位置不同。In order to achieve the above-mentioned purpose, a coating device of one aspect of the present invention comprises: a coating tank, which stores a coating liquid, and an anode is arranged inside the coating liquid, and a substrate is arranged inside the coating liquid in a manner opposite to the anode; and a stirring paddle, which is arranged between the anode and the substrate, and stirs the coating liquid by moving back and forth in a first direction parallel to the substrate and in a second direction opposite to the first direction; the stirring paddle has a plurality of beam components, which are arranged between the stirring paddle and the substrate. The paddle extends in a direction perpendicular to the reciprocating direction, the reciprocating movement of the paddle in the first direction and the second direction includes the paddle reciprocating in a first reciprocating pattern, in which the paddle moves in the second direction with a stroke different from that in the first direction, so that the positions of the plurality of beam components are changed when the paddle changes its moving direction from the second direction to the first direction; and the positions of the plurality of beam components are different when the paddle changes its moving direction from the first direction to the second direction.
採用該樣態時,當攪槳從第二方向改變移動方向成第一方向時、及從第一方向改變移動方向成第二方向時,可使攪槳之梁構件不致位於相同部位。藉此,可縮小攪槳之梁構件引起遮蔽電場的影響。結果可使基板之鍍覆品質提高。 (樣態2) When this mode is adopted, when the propeller changes its moving direction from the second direction to the first direction, and when the propeller changes its moving direction from the first direction to the second direction, the propeller beam member can be prevented from being located at the same position. In this way, the effect of the propeller beam member causing the shielding electric field can be reduced. As a result, the coating quality of the substrate can be improved. (Mode 2)
上述樣態1中,前述攪槳在前述第一方向及前述第二方向往返移動,包含前述攪槳以前述第一往返樣態複數次往返移動後,以第二往返樣態而往返移動,在前述第一往返樣態下,在前述第二方向移動時之前述攪槳的行程比在前述第一方向移動時之前述攪槳的行程短,在前述第二往返樣態下,前述攪槳藉由以比在前述第一方向移動時之行程長的行程而在前述第二方向移動,亦可使前述攪槳從前述第二方向改變移動方向成前述第一方向時之前述複數個梁構件的位置;及從前述第一方向改變移動方向成前述第二方向時之前述複數個梁構件的位置不同。 (樣態3) In the above-mentioned form 1, the above-mentioned paddle moves back and forth in the above-mentioned first direction and the above-mentioned second direction, including the above-mentioned paddle moving back and forth multiple times in the above-mentioned first reciprocating form and then moving back and forth in the second reciprocating form, in the above-mentioned first reciprocating form, the stroke of the above-mentioned paddle when moving in the above-mentioned second direction is shorter than the stroke of the above-mentioned paddle when moving in the above-mentioned first direction, and in the above-mentioned second reciprocating form, the above-mentioned paddle moves in the above-mentioned second direction with a stroke longer than the stroke when moving in the above-mentioned first direction, so that the positions of the above-mentioned multiple beam components when the above-mentioned paddle changes the moving direction from the above-mentioned second direction to the above-mentioned first direction are different; and the positions of the above-mentioned multiple beam components when the moving direction is changed from the above-mentioned first direction to the above-mentioned second direction are different. (Form 3)
上述樣態1中,前述攪槳在前述第一方向及前述第二方向往返移動,包含前述攪槳以前述第一往返樣態複數次往返移動後,以第二往返樣態而往返移動,在前述第一往返樣態下,在前述第二方向移動時之前述攪槳的行程比在前述第一方向移動時之前述攪槳的行程長,在前述第二往返樣態下,前述攪槳藉由以比在前述第一方向移動時之行程短的行程而在前述第二方向移動,亦可使前述攪槳從前述第二方向改變移動方向成前述第一方向時之前述複數個梁構件的位置;及從前述第一方向改變移動方向成前述第二方向時之前述複數個梁構件的位置不同。 (樣態4) In the above-mentioned form 1, the above-mentioned paddle moves back and forth in the above-mentioned first direction and the above-mentioned second direction, including the above-mentioned paddle moving back and forth multiple times in the above-mentioned first reciprocating form and then moving back and forth in the second reciprocating form, in the above-mentioned first reciprocating form, the stroke of the above-mentioned paddle when moving in the above-mentioned second direction is longer than the stroke of the above-mentioned paddle when moving in the above-mentioned first direction, and in the above-mentioned second reciprocating form, the above-mentioned paddle moves in the above-mentioned second direction with a stroke shorter than the stroke when moving in the above-mentioned first direction, so that the positions of the above-mentioned multiple beam components when the above-mentioned paddle changes the moving direction from the above-mentioned second direction to the above-mentioned first direction are different; and the positions of the above-mentioned multiple beam components when the moving direction is changed from the above-mentioned first direction to the above-mentioned second direction are different. (Form 4)
上述樣態1~3之任何一個樣態中,亦可將前述基板配置於比前述陽極上方,並在前述鍍覆液之內部,於比前述陽極上方,且比前述攪槳下方配置有具有複數個孔之離子阻力體。 (樣態5) In any of the above-mentioned forms 1 to 3, the aforementioned substrate may be arranged above the aforementioned anode, and an ion resistor having a plurality of holes may be arranged inside the aforementioned coating liquid, above the aforementioned anode and below the aforementioned paddle. (Form 5)
上述樣態4中,前述攪槳在前述第一方向及前述第二方向往返移動,亦可包含前述攪槳在前述第一方向以不同速度複數次移動,或是前述攪槳在前述第二方向以不同速度複數次移動。In the above-mentioned aspect 4, the paddle moves back and forth in the first direction and the second direction, which may also include the paddle moving a plurality of times at different speeds in the first direction, or the paddle moving a plurality of times at different speeds in the second direction.
採用該樣態時,可有效除去附著於離子阻力體之孔的氣泡。藉此,可使基板之鍍覆品質提高。 (樣態6) When this mode is adopted, bubbles attached to the holes of the ion resistor can be effectively removed. This can improve the plating quality of the substrate. (Mode 6)
上述樣態4中,前述攪槳在前述第一方向及前述第二方向往返移動,亦可包含前述攪槳在前述第一方向以第一速度移動後,在第二方向以與前述第一速度不同之第二速度移動。In the above-mentioned aspect 4, the paddle reciprocates in the first direction and the second direction, which may also include the paddle moving in the first direction at a first speed and then moving in the second direction at a second speed different from the first speed.
採用該樣態時,可有效除去附著於離子阻力體之孔的氣泡。藉此,可使基板之鍍覆品質提高。 (樣態7) When this mode is adopted, bubbles attached to the holes of the ion resistor can be effectively removed. This can improve the coating quality of the substrate. (Mode 7)
為了達成上述目的,本發明一個樣態之鍍覆裝置係具備:鍍覆槽,其係貯存鍍覆液,並且在前述鍍覆液之內部配置有陽極,並在前述鍍覆液之內部以與前述陽極相對之方式配置有基板;及攪槳,其係以配置於前述陽極與前述基板之間,並藉由在與前述基板平行之方向,於第一方向及與前述第一方向相反之第二方向往返移動來攪拌前述鍍覆液的方式而構成;前述基板配置於比前述陽極上方,在前述鍍覆液之內部,並在比前述陽極上方,且比前述攪槳下方配置具有複數個孔之離子阻力體,前述攪槳在前述第一方向及前述第二方向往返移動,包含前述攪槳在前述第一方向以第一速度移動後,在前述第二方向以與前述第一速度不同之第二速度移動。In order to achieve the above-mentioned purpose, a coating device of one aspect of the present invention comprises: a coating tank, which stores a coating liquid, and an anode is arranged inside the coating liquid, and a substrate is arranged inside the coating liquid in a manner opposite to the anode; and a stirrer, which is arranged between the anode and the substrate, and moves back and forth in a first direction and a second direction opposite to the first direction in a direction parallel to the substrate. The substrate is arranged above the anode, inside the coating liquid, and an ion resistance body having a plurality of holes is arranged above the anode and below the paddle. The paddle moves back and forth in the first direction and the second direction, including the paddle moving at a first speed in the first direction and then moving at a second speed in the second direction that is different from the first speed.
採用該樣態時,可有效除去附著於離子阻力體之孔的氣泡。藉此,可使基板之鍍覆品質提高。When this mode is adopted, bubbles attached to the holes of the ion resistor can be effectively removed, thereby improving the plating quality of the substrate.
以下,參照圖式說明本發明之實施形態。另外,圖式是為了容易理解構成元件之特徵而以示意性圖示,各構成元件之尺寸比率等未必與實際者相同。此外,在一些圖式中圖示有X-Y-Z之正交座標作為參考。該正交座標中,Z方向相當於上方,-Z方向相當於下方(重力作用之方向)。The following is a description of the embodiments of the present invention with reference to the drawings. In addition, the drawings are schematic diagrams for easy understanding of the features of the components, and the size ratios of the components may not be the same as the actual ones. In addition, in some drawings, the orthogonal coordinates of X-Y-Z are shown for reference. In the orthogonal coordinates, the Z direction is equivalent to the top, and the -Z direction is equivalent to the bottom (the direction of gravity).
圖1係示出本實施形態之鍍覆裝置1000的全體構成的立體圖。圖2係示出本實施形態之鍍覆裝置1000的全體構成的俯視圖。如圖1及圖2所示,鍍覆裝置1000係具備:載入埠100、搬送機器人110、對準器120、預濕模組200、預浸模組300、鍍覆模組400、洗淨模組500、旋乾機(spin rinse dryer)600、搬送裝置700、及控制模組800。FIG. 1 is a perspective view showing the overall structure of the coating device 1000 of the present embodiment. FIG. 2 is a top view showing the overall structure of the coating device 1000 of the present embodiment. As shown in FIG. 1 and FIG. 2 , the coating device 1000 includes: a loading port 100, a transfer robot 110, an aligner 120, a pre-wetting module 200, a pre-preg module 300, a coating module 400, a cleaning module 500, a spin rinse dryer 600, a transfer device 700, and a control module 800.
載入埠100係用以將被收容在未圖示的FOUP等匣盒的基板搬入至鍍覆裝置1000、或將基板由鍍覆裝置1000搬出至匣盒的模組。在本實施形態中係以水平方向排列配置4台載入埠100,惟載入埠100的數量及配置為任意。搬送機器人110係用以搬送基板的機器人,構成為在載入埠100、對準器120、預濕模組200及旋乾機600之間收授基板。搬送機器人110及搬送裝置700係當在搬送機器人110與搬送裝置700之間收授基板時,係可透過暫置台(未圖示)來進行基板的收授。The loading port 100 is a module for transferring substrates contained in a cassette such as a FOUP (not shown) into the coating device 1000, or transferring substrates from the coating device 1000 to the cassette. In the present embodiment, four loading ports 100 are arranged in a horizontal direction, but the number and arrangement of the loading ports 100 are arbitrary. The transport robot 110 is a robot for transferring substrates, and is configured to transfer substrates between the loading port 100, the aligner 120, the pre-wetting module 200, and the spin dryer 600. When transferring substrates between the transport robot 110 and the transport device 700, the transfer of substrates can be performed through a temporary table (not shown).
對準器120係用以將基板的定向平面或凹口等的位置對合在預定的方向的模組。在本實施形態中係以水平方向排列配置2台對準器120,惟對準器120的數量及配置為任意。預濕模組200係以純水或脫氣水等處理液將鍍覆處理前的基板的被鍍覆面弄濕,藉此將形成在基板表面的圖案內部的空氣置換成處理液。預濕模組200係構成為施行藉由在鍍覆時將圖案內部的處理液置換成鍍覆液,以對圖案內部容易供給鍍覆液的預濕處理。在本實施形態中係以上下方向排列配置2台預濕模組200,惟預濕模組200的數量及配置為任意。The aligner 120 is a module used to align the position of the orientation plane or notch of the substrate in a predetermined direction. In the present embodiment, two aligners 120 are arranged in a horizontal direction, but the number and arrangement of the aligners 120 are arbitrary. The prewet module 200 wets the coated surface of the substrate before the coating process with a treatment liquid such as pure water or degassed water, thereby replacing the air inside the pattern formed on the surface of the substrate with the treatment liquid. The prewet module 200 is configured to perform a prewet treatment by replacing the treatment liquid inside the pattern with the coating liquid during coating, so as to facilitate the supply of the coating liquid to the inside of the pattern. In the present embodiment, two prewet modules 200 are arranged in an up-down direction, but the number and arrangement of the prewet modules 200 are arbitrary.
預浸模組300係構成為施行例如將形成在鍍覆處理前的基板的被鍍覆面的種層表面等所存在的電阻大的氧化膜,以硫酸或鹽酸等處理液蝕刻去除而將鍍覆基底表面進行洗淨或活性化的預浸處理。在本實施形態中係以上下方向排列配置2台預浸模組300,惟預浸模組300的數量及配置為任意。鍍覆模組400係對基板施行鍍覆處理。在本實施形態中,係以上下方向排列配置3台且以水平方向排列配置4台的12台鍍覆模組400的集合有2個,設有合計24台鍍覆模組400,惟鍍覆模組400的數量及配置為任意。The prepreg module 300 is configured to perform a prepreg treatment, for example, to remove a high-resistance oxide film existing on the surface of the seed layer of the substrate to be plated before the plating treatment by etching with a treatment solution such as sulfuric acid or hydrochloric acid to clean or activate the surface of the plated substrate. In the present embodiment, two prepreg modules 300 are arranged in a vertical direction, but the number and arrangement of the prepreg modules 300 are arbitrary. The plating module 400 performs a plating treatment on the substrate. In the present embodiment, there are two sets of 12 plating modules 400, in which three are arranged in a vertical direction and four are arranged in a horizontal direction, and a total of 24 plating modules 400 are provided, but the number and arrangement of the plating modules 400 are arbitrary.
洗淨模組500係構成為對基板施行洗淨處理,俾以去除殘留在鍍覆處理後的基板的鍍覆液等。在本實施形態中係以上下方向排列配置2台洗淨模組500,惟洗淨模組500的數量及配置為任意。旋乾機600係用以使洗淨處理後的基板高速旋轉而乾燥的模組。在本實施形態中係以上下方向排列配置2台旋乾機600,惟旋乾機600的數量及配置為任意。搬送裝置700係用以在鍍覆裝置1000內的複數模組間搬送基板的裝置。控制模組800係構成為控制鍍覆裝置1000的複數模組,可由具備例如與操作員之間的輸出入介面的一般電腦或專用電腦所構成。The cleaning module 500 is configured to perform a cleaning process on the substrate to remove the coating liquid and the like remaining on the substrate after the coating process. In the present embodiment, two cleaning modules 500 are arranged in an up-down direction, but the number and arrangement of the cleaning modules 500 are arbitrary. The spin dryer 600 is a module for drying the substrate after the cleaning process by high-speed rotation. In the present embodiment, two spin dryers 600 are arranged in an up-down direction, but the number and arrangement of the spin dryers 600 are arbitrary. The conveying device 700 is a device for conveying substrates between a plurality of modules in the coating device 1000. The control module 800 is composed of a plurality of modules for controlling the coating device 1000, and can be composed of a general computer or a dedicated computer having an input/output interface with an operator, for example.
以下說明藉由鍍覆裝置1000所為之一連串鍍覆處理之一例。首先,被收容在匣盒的基板被搬入至載入埠100。接著,搬送機器人110係由載入埠100的匣盒取出基板,且將基板搬送至對準器120。對準器120係將基板的定向平面或凹口等的位置對合在預定的方向。搬送機器人110係將以對準器120將方向對合後的基板對搬送裝置700進行收授。The following describes an example of a continuous coating process performed by the coating device 1000. First, the substrate contained in the cassette is moved to the loading port 100. Then, the transport robot 110 takes out the substrate from the cassette of the loading port 100 and transports the substrate to the aligner 120. The aligner 120 aligns the position of the orientation plane or notch of the substrate in a predetermined direction. The transport robot 110 receives and delivers the substrate whose direction is aligned by the aligner 120 to the transport device 700.
預濕模組200係對基板施行預濕處理。搬送裝置700係將由搬送機器人110所收取到的基板搬送至預濕模組200。搬送裝置700係將已施行預濕處理的基板搬送至預浸模組300。預浸模組300係對基板施行預浸處理。搬送裝置700係將已施行預浸處理的基板搬送至鍍覆模組400。鍍覆模組400係對基板施行鍍覆處理。The prewetting module 200 performs a prewetting process on the substrate. The conveying device 700 conveys the substrate received by the conveying robot 110 to the prewetting module 200. The conveying device 700 conveys the substrate that has been prewetting to the prepreg module 300. The prepreg module 300 performs a prepreg process on the substrate. The conveying device 700 conveys the substrate that has been prewetting to the coating module 400. The coating module 400 performs a coating process on the substrate.
搬送裝置700係將已施行鍍覆處理的基板搬送至洗淨模組500。洗淨模組500係對基板施行洗淨處理。搬送裝置700係將已施行洗淨處理的基板搬送至旋乾機600。旋乾機600係對基板施行乾燥處理。搬送機器人110係由旋乾機600收取基板,將已施行乾燥處理的基板搬送至載入埠100的匣盒。最後由載入埠100搬出收容有基板的匣盒。The transport device 700 transports the substrate that has been subjected to the coating process to the cleaning module 500. The cleaning module 500 performs a cleaning process on the substrate. The transport device 700 transports the substrate that has been subjected to the cleaning process to the spin dryer 600. The spin dryer 600 performs a drying process on the substrate. The transport robot 110 receives the substrate from the spin dryer 600 and transports the substrate that has been subjected to the drying process to the cassette of the loading port 100. Finally, the cassette containing the substrate is unloaded from the loading port 100.
另外,圖1及圖2說明之鍍覆裝置1000的構成不過是一例,鍍覆裝置1000之構成並非限定於圖1及圖2之構成者。In addition, the structure of the coating device 1000 illustrated in FIG. 1 and FIG. 2 is merely an example, and the structure of the coating device 1000 is not limited to the structure of FIG. 1 and FIG. 2 .
繼續,說明鍍覆模組400。另外,由於本實施形態之鍍覆裝置1000具有的複數個鍍覆模組400具有同樣之構成,因此就1個鍍覆模組400作說明。Next, the coating module 400 will be described. In addition, since the plurality of coating modules 400 included in the coating apparatus 1000 of the present embodiment have the same structure, one coating module 400 will be described.
圖3係顯示本實施形態之鍍覆裝置1000中的鍍覆模組400之構成的示意圖。具體而言,圖3示意性圖示在將基板Wf浸漬於鍍覆液Ps之前狀態下的鍍覆模組400。圖4係顯示將基板Wf浸漬於鍍覆液Ps之狀態的示意圖。Fig. 3 is a schematic diagram showing the structure of the coating module 400 in the coating apparatus 1000 of the present embodiment. Specifically, Fig. 3 schematically shows the coating module 400 before the substrate Wf is immersed in the coating liquid Ps. Fig. 4 is a schematic diagram showing the state where the substrate Wf is immersed in the coating liquid Ps.
圖3及圖4中例示之鍍覆裝置1000的一例為杯式之鍍覆裝置。但是,並非限定於該構成者,例如,本實施形態之鍍覆裝置1000亦可係使基板Wf之面方向在上下方向狀態下浸漬於鍍覆液Ps類型的鍍覆裝置(亦即,係縱型之鍍覆裝置)。An example of the coating apparatus 1000 illustrated in FIG3 and FIG4 is a cup-type coating apparatus. However, the coating apparatus 1000 is not limited to this configuration. For example, the coating apparatus 1000 of this embodiment may also be a coating apparatus of a type in which the surface direction of the substrate Wf is immersed in the coating liquid Ps in the vertical direction (that is, a vertical coating apparatus).
圖3及圖4中例示之鍍覆裝置1000的鍍覆模組400具備:鍍覆槽10、溢流槽20、基板固持器30、及攪槳70。此外,鍍覆模組400如圖3所例示,亦可具備:旋轉機構40、傾斜機構45、及升降機構50。The coating module 400 of the coating device 1000 illustrated in Figures 3 and 4 includes a coating tank 10, an overflow tank 20, a substrate holder 30, and a stirrer 70. In addition, the coating module 400 may also include a rotating mechanism 40, a tilting mechanism 45, and a lifting mechanism 50 as illustrated in Figure 3.
本實施形態之鍍覆槽10藉由在上方具有開口之有底的容器而構成。具體而言,鍍覆槽10具有:底壁10a;及從該底壁10a之外周緣向上方延伸的外周壁10b,該外周壁10b之上部開口。另外,鍍覆槽10之外周壁10b的形狀並非特別限定者,不過本實施形態之外周壁10b的一例為具有圓筒形狀。在鍍覆槽10之內部貯存有鍍覆液Ps。The coating tank 10 of the present embodiment is formed by a bottomed container having an opening at the top. Specifically, the coating tank 10 has a bottom wall 10a and an outer peripheral wall 10b extending upward from the outer periphery of the bottom wall 10a, and the upper part of the outer peripheral wall 10b is open. In addition, the shape of the outer peripheral wall 10b of the coating tank 10 is not particularly limited, but an example of the outer peripheral wall 10b of the present embodiment is a cylindrical shape. The coating liquid Ps is stored inside the coating tank 10.
鍍覆液Ps只要是包含構成鍍覆皮膜之金屬元素的離子之溶液即可,其具體例並非特別限定者。本實施形態中,鍍覆處理之一例為使用銅鍍覆處理,鍍覆液Ps之一例為使用硫酸銅溶液。此外,鍍覆液Ps中亦可含有指定之添加劑。The plating solution Ps can be any solution containing ions of the metal element constituting the plating film, and its specific example is not particularly limited. In this embodiment, one example of the plating treatment is copper plating treatment, and one example of the plating solution Ps is copper sulfate solution. In addition, the plating solution Ps may also contain a specified additive.
在鍍覆槽10之鍍覆液Ps的內部配置有陽極11。此外,至少在基板Wf之鍍覆處理時,在鍍覆槽10之鍍覆液Ps的內部,以與陽極11相對之方式亦配置基板Wf。陽極11之具體種類並非特別限定者,亦可係不溶解性陽極,亦可係溶解性陽極。本實施形態之陽極11的一例為使用不溶解性陽極。該不溶解性陽極之具體種類並非特別限定者,可使用鉑或氧化銥等。An anode 11 is arranged inside the plating liquid Ps of the plating tank 10. In addition, at least when the substrate Wf is subjected to plating treatment, the substrate Wf is also arranged inside the plating liquid Ps of the plating tank 10 in a manner opposite to the anode 11. The specific type of the anode 11 is not particularly limited, and it may be an insoluble anode or a soluble anode. An example of the anode 11 of the present embodiment is to use an insoluble anode. The specific type of the insoluble anode is not particularly limited, and platinum or iridium oxide, etc., may be used.
亦可在鍍覆槽10之鍍覆液Ps的內部,並在比陽極11上方,且比基板Wf下方(具體而言,本實施形態係進一步比攪槳70下方)配置離子阻力體12。具體而言,如圖4(B1部分之放大圖)所例示,離子阻力體12藉由具有複數個孔12a(細孔)之多孔質的板構件而構成。孔12a係以連通離子阻力體12之下面與上面的方式而設。The ion resistor 12 may be disposed inside the plating liquid Ps of the plating tank 10, above the anode 11, and below the substrate Wf (specifically, further below the stirring paddle 70 in this embodiment). Specifically, as shown in FIG. 4 (an enlarged view of the B1 portion), the ion resistor 12 is formed by a porous plate member having a plurality of holes 12a (fine holes). The holes 12a are provided so as to connect the bottom and top of the ion resistor 12.
如圖3所例示,將離子阻力體12中形成有複數個孔12a之區域稱為「孔形成區域PA」。俯視本實施形態之孔形成區域PA時具有圓形狀。此外,本實施形態之孔形成區域PA的面積與基板Wf之被鍍覆面Wfa的面積相同,或是比該被鍍覆面Wfa之面積大。但是,並非限定於該構成者,孔形成區域PA之面積亦可比基板Wf之被鍍覆面Wfa的面積小。As shown in FIG. 3 , the region in which a plurality of holes 12a are formed in the ion resistor 12 is referred to as a "hole forming region PA". The hole forming region PA of this embodiment has a circular shape when viewed from above. In addition, the area of the hole forming region PA of this embodiment is the same as the area of the coated surface Wfa of the substrate Wf, or is larger than the area of the coated surface Wfa. However, the present invention is not limited to this configuration, and the area of the hole forming region PA may be smaller than the area of the coated surface Wfa of the substrate Wf.
該離子阻力體12係為了謀求形成於陽極11與基板Wf之間的電場均勻化而設。如本實施形態,藉由在鍍覆槽10中配置離子阻力體12,可輕易謀求形成於基板Wf之鍍覆皮膜(鍍覆層)的膜厚均勻化。The ion resistor 12 is provided to make the electric field formed between the anode 11 and the substrate Wf uniform. As in this embodiment, by disposing the ion resistor 12 in the plating tank 10, the thickness of the plating film (plating layer) formed on the substrate Wf can be easily made uniform.
如圖3及圖4所例示,在鍍覆槽10之內部,亦可在比陽極11上方且比離子阻力體12下方的部位配置有膜16。此時,鍍覆槽10之內部藉由膜16劃分成比膜16下方之陽極室17a、與比膜16上方之陰極室17b。陽極11配置於陽極室17a,離子阻力體12及基板Wf配置於陰極室17b。膜16係以容許鍍覆液Ps所含之包含金屬離子的離子種通過膜16,且抑制鍍覆液Ps所含之非離子系的鍍覆添加劑通過膜16之方式而構成。此種膜16例如可使用離子交換膜。As shown in FIG. 3 and FIG. 4 , a film 16 may be arranged inside the plating tank 10 at a position above the anode 11 and below the ion resistor 12. At this time, the inside of the plating tank 10 is divided into an anode chamber 17a below the film 16 and a cathode chamber 17b above the film 16 by the film 16. The anode 11 is arranged in the anode chamber 17a, and the ion resistor 12 and the substrate Wf are arranged in the cathode chamber 17b. The film 16 is configured to allow ion species including metal ions contained in the plating solution Ps to pass through the film 16 and to inhibit non-ionic plating additives contained in the plating solution Ps from passing through the film 16. For example, an ion exchange membrane can be used as such a film 16.
鍍覆槽10中設有用於在鍍覆槽10中供給鍍覆液Ps之供給口。具體而言,在本實施形態之鍍覆槽10的外周壁10b上設有用於在陽極室17a中供給鍍覆液Ps之第一供給口13a;及用於在陰極室17b中供給鍍覆液Ps之第二供給口13b。The coating tank 10 is provided with a supply port for supplying the coating liquid Ps in the coating tank 10. Specifically, the coating tank 10 of this embodiment has an outer peripheral wall 10b provided with a first supply port 13a for supplying the coating liquid Ps in the anode chamber 17a and a second supply port 13b for supplying the coating liquid Ps in the cathode chamber 17b.
此外,鍍覆槽10中設有用於將陽極室17a之鍍覆液Ps排出鍍覆槽10外部的第一排出口14a。從第一排出口14a排出之鍍覆液Ps藉由泵浦(無圖示)壓送,而再度從第一供給口13a供給至陽極室17a。In addition, the coating tank 10 is provided with a first discharge port 14a for discharging the coating liquid Ps in the anode chamber 17a to the outside of the coating tank 10. The coating liquid Ps discharged from the first discharge port 14a is pumped by a pump (not shown) and supplied to the anode chamber 17a again from the first supply port 13a.
溢流槽20藉由配置於鍍覆槽10外側之有底容器而構成。溢流槽20係為了將超過鍍覆槽10之外周壁10b上端的鍍覆液Ps(亦即,從鍍覆槽10溢流之鍍覆液Ps)暫時貯存而設。貯存於溢流槽20之鍍覆液Ps從第二排出口14b排出後,藉由泵浦(無圖示)壓送,而再度從第二供給口13b供給至陰極室17b。The overflow tank 20 is formed by a bottomed container disposed outside the coating tank 10. The overflow tank 20 is provided to temporarily store the coating liquid Ps exceeding the upper end of the outer peripheral wall 10b of the coating tank 10 (i.e., the coating liquid Ps overflowing from the coating tank 10). After the coating liquid Ps stored in the overflow tank 20 is discharged from the second discharge port 14b, it is pumped by a pump (not shown) and supplied to the cathode chamber 17b again from the second supply port 13b.
基板固持器30係以基板Wf之被鍍覆面Wfa與陽極11相對的方式而保持作為陰極之基板Wf。本實施形態中,基板Wf之被鍍覆面Wfa具體而言設於朝向基板Wf之下方側的面(下面)。The substrate holder 30 holds the substrate Wf as a cathode in such a manner that the coated surface Wfa of the substrate Wf faces the anode 11. In the present embodiment, the coated surface Wfa of the substrate Wf is specifically provided on the surface (bottom surface) facing the lower side of the substrate Wf.
如圖3所例示,基板固持器30亦可具有以比基板Wf之被鍍覆面Wfa的外周緣突出於下方之方式而設的環31。具體而言,本實施形態之環31從下面觀看具有環形狀。3 , the substrate holder 30 may also include a ring 31 provided so as to protrude downward from the outer periphery of the plated surface Wfa of the substrate Wf. Specifically, the ring 31 of the present embodiment has a ring shape when viewed from below.
基板固持器30連接至旋轉機構40。旋轉機構40係用於使基板固持器30旋轉的機構。圖3所例示之「R1」係基板固持器30之旋轉方向的一例。旋轉機構40可使用習知之旋轉馬達。傾斜機構45係用於使旋轉機構40及基板固持器30傾斜的機構。升降機構50藉由在上下方向延伸之支軸51而支撐。升降機構50係用於使基板固持器30、旋轉機構40及傾斜機構45在上下方向升降的機構。升降機構50可使用直動式之致動器等習知的升降機構。The substrate holder 30 is connected to the rotating mechanism 40. The rotating mechanism 40 is a mechanism for rotating the substrate holder 30. "R1" illustrated in FIG. 3 is an example of the rotation direction of the substrate holder 30. The rotating mechanism 40 can use a known rotating motor. The tilting mechanism 45 is a mechanism for tilting the rotating mechanism 40 and the substrate holder 30. The lifting mechanism 50 is supported by a support shaft 51 extending in the up-down direction. The lifting mechanism 50 is a mechanism for lifting and lowering the substrate holder 30, the rotating mechanism 40, and the tilting mechanism 45 in the up-down direction. The lifting mechanism 50 can use a known lifting mechanism such as a direct-acting actuator.
控制模組800備有微電腦,該微電腦具備:處理器801;及作為非暫態性記憶媒體之記憶裝置802等。控制模組800依據記憶於記憶裝置802之程式的指令,藉由處理器801工作來控制鍍覆模組400之動作。The control module 800 is equipped with a microcomputer, which includes a processor 801 and a memory device 802 as a non-transitory memory medium. The control module 800 controls the operation of the coating module 400 by operating the processor 801 according to the instructions of the program stored in the memory device 802 .
圖5係攪槳70之示意俯視圖。參照圖3、圖4及圖5,攪槳70配置在鍍覆槽10內部的陽極11與基板Wf之間的部位。具體而言,本實施形態之攪槳70配置在比陽極11上方而配置的離子阻力體12與基板Wf之間。Fig. 5 is a schematic top view of the stirrer 70. Referring to Fig. 3, Fig. 4 and Fig. 5, the stirrer 70 is disposed between the anode 11 and the substrate Wf inside the coating tank 10. Specifically, the stirrer 70 of this embodiment is disposed between the ion resistor 12 disposed above the anode 11 and the substrate Wf.
參照圖5,攪槳70藉由驅動裝置77受驅動。驅動裝置77之動作是由控制模組800控制。藉由驅動攪槳70來攪拌鍍覆槽10之鍍覆液Ps。5 , the impeller 70 is driven by the driving device 77. The operation of the driving device 77 is controlled by the control module 800. The impeller 70 is driven to stir the coating liquid Ps in the coating tank 10.
本實施形態之驅動裝置77接受控制模組800的指示,而使攪槳70在與基板Wf(或陽極11)平行之方向「第一方向(本實施形態之一例為X方向)」、及與第一方向相反之「第二方向(本實施形態之一例為-X方向)」交互移動。亦即,本實施形態之攪槳70係在第一方向及第二方向往返移動。The driving device 77 of this embodiment receives the instruction of the control module 800, and makes the impeller 70 move alternately in the direction parallel to the substrate Wf (or the anode 11) "first direction (one example of this embodiment is the X direction)" and the "second direction (one example of this embodiment is the -X direction)" opposite to the first direction. That is, the impeller 70 of this embodiment moves back and forth in the first direction and the second direction.
此外,本實施形態之驅動裝置77係以可變更使攪槳70在第一方向移動時之行程與在第二方向移動時之行程的方式而構成。此種驅動裝置77之機械性構造本身並非特別限定者,而可使用習知之驅動裝置(例如,日本特開2019-151874號公報等)。舉出具體例時,本實施形態之驅動裝置77係以具備連接至攪槳70的直線馬達77a,並藉由該直線馬達77a而使攪槳70往返移動之方式而構成(亦即,本實施形態之驅動裝置77的一例係直線馬達式之驅動裝置)。In addition, the drive device 77 of the present embodiment is configured to change the stroke of the impeller 70 when it moves in the first direction and the stroke when it moves in the second direction. The mechanical structure of the drive device 77 itself is not particularly limited, and a known drive device (for example, Japanese Patent Publication No. 2019-151874, etc.) can be used. When giving a specific example, the drive device 77 of the present embodiment is configured to have a linear motor 77a connected to the impeller 70, and the impeller 70 is moved back and forth by the linear motor 77a (that is, an example of the drive device 77 of the present embodiment is a linear motor type drive device).
本實施形態之攪槳70的一例係在第一方向及第二方向以一定速度(mm/sec,或rpm)移動。此外,一例為本實施形態之攪槳70在第一方向移動時之速度與在第二方向移動時的速度係相同值。另外,以rpm表示攪槳70往返移動時之速度的單位時,例如,所謂攪槳70之速度係N(rpm),是指在1分鐘內攪槳70往返1次進行了N次。In one example, the impeller 70 of the present embodiment moves at a constant speed (mm/sec, or rpm) in the first direction and the second direction. In another example, the impeller 70 of the present embodiment moves at the same speed in the first direction and the second direction. In addition, when the unit of the speed of the impeller 70 when it moves back and forth is expressed in rpm, for example, the speed of the impeller 70 is N (rpm), which means that the impeller 70 moves back and forth once N times in 1 minute.
如圖5所例示,本實施形態之攪槳70具有複數個在對第一方向(及第二方向)垂直之方向(Y軸方向)延伸的梁構件71。在鄰接的梁構件71之間設有間隙。複數個梁構件71之一端連結至第一連結構件72a,另一端連結至第二連結構件72b。攪槳70驅動時,攪槳70具體而言係梁構件71攪拌鍍覆液Ps。亦即,梁構件71具有作為「攪拌部位」之功能。As shown in FIG. 5 , the paddle 70 of this embodiment has a plurality of beam members 71 extending in a direction (Y-axis direction) perpendicular to the first direction (and the second direction). A gap is provided between adjacent beam members 71. One end of the plurality of beam members 71 is connected to the first connection member 72a, and the other end is connected to the second connection member 72b. When the paddle 70 is driven, the paddle 70, specifically the beam member 71, stirs the coating liquid Ps. That is, the beam member 71 has a function as a "stirring portion".
另外,身為本實施形態之攪槳70的往返移動方向之長度的攪槳寬(圖5係攪槳70之X方向的長度),比基板Wf之被鍍覆面Wfa在第一方向的外緣與在第二方向的外緣之距離的最大值「基板寬度D1(符號例示於圖3)」小,不過並非限定於該構成者。攪槳70之攪槳寬亦可與基板寬度D1相等,亦可比基板寬度D1大。In addition, the paddle width (the length of the paddle 70 in the X direction in FIG. 5 ) which is the length of the paddle 70 in the reciprocating direction of the present embodiment is smaller than the maximum value of the distance between the outer edge of the plated surface Wfa of the substrate Wf in the first direction and the outer edge in the second direction, “substrate width D1 (symbol example shown in FIG. 3 )”, but the present invention is not limited to this configuration. The paddle width of the paddle 70 may be equal to the substrate width D1 or may be larger than the substrate width D1.
此外,本實施形態之攪槳70的攪槳寬,於攪槳70以後述之第一往返樣態及第二往返樣態而往返移動時,係設定成攪槳70不致碰撞鍍覆槽10之外周壁10b的內面之大小。In addition, the paddle width of the paddle 70 of the present embodiment is set to a size that does not collide with the inner surface of the outer peripheral wall 10b of the coating groove 10 when the paddle 70 reciprocates in the first reciprocating pattern and the second reciprocating pattern described later.
俯視攪槳70時,攪拌鍍覆液Ps時攪槳70之移動區域MA(亦即,攪槳70往返移動之範圍)宜以覆蓋離子阻力體12之整個孔形成區域PA的方式而構成。採用該構成時,可藉由攪槳70有效攪拌比離子阻力體12之孔形成區域PA上方的鍍覆液Ps。When the paddle 70 is viewed from above, the moving area MA of the paddle 70 (i.e., the range of the paddle 70's reciprocating movement) when stirring the coating liquid Ps is preferably configured to cover the entire hole forming area PA of the ion resistor 12. When this configuration is adopted, the coating liquid Ps above the hole forming area PA of the ion resistor 12 can be effectively stirred by the paddle 70.
另外,攪槳70至少在攪拌鍍覆液Ps時配置在鍍覆槽10之內部即可,而不需要始終配置在鍍覆槽10內部。例如,停止驅動攪槳70而不進行藉由攪槳70攪拌鍍覆液Ps情況下,攪槳70亦可為配置在鍍覆槽10外部之構成。In addition, the paddle 70 may be disposed inside the coating tank 10 at least when the coating liquid Ps is stirred, and need not be disposed inside the coating tank 10 all the time. For example, when the paddle 70 is stopped from being driven and the coating liquid Ps is not stirred by the paddle 70, the paddle 70 may be disposed outside the coating tank 10.
圖6係用於說明本實施形態之從供給鍍覆液至開始鍍覆處理的一連串動作之流程圖。首先,在鍍覆槽10中供給鍍覆液Ps(步驟S10)。具體而言,係以陽極11及離子阻力體12浸漬於鍍覆液Ps之方式在鍍覆槽10中供給鍍覆液Ps。更具體而言,本實施形態係從第一供給口13a及第二供給口13b供給鍍覆液Ps至鍍覆槽10。FIG6 is a flow chart for explaining a series of actions from supplying the coating liquid to starting the coating process in the present embodiment. First, the coating liquid Ps is supplied to the coating tank 10 (step S10). Specifically, the coating liquid Ps is supplied to the coating tank 10 in such a manner that the anode 11 and the ion resistor 12 are immersed in the coating liquid Ps. More specifically, the present embodiment supplies the coating liquid Ps to the coating tank 10 from the first supply port 13a and the second supply port 13b.
接著,使基板Wf浸漬於鍍覆液Ps(步驟S20)。具體而言,本實施形態藉由升降機構50使基板固持器30下降,而使基板Wf之至少被鍍覆面Wfa浸漬於鍍覆液Ps。Next, the substrate Wf is immersed in the coating liquid Ps (step S20 ). Specifically, in this embodiment, the substrate holder 30 is lowered by the lifting mechanism 50 , so that at least the coating surface Wfa of the substrate Wf is immersed in the coating liquid Ps.
接著,藉由驅動裝置77開始驅動攪槳70,而開始藉由攪槳70攪拌鍍覆液Ps(步驟S30)。Next, the driving device 77 starts driving the paddle 70, and the paddle 70 starts stirring the coating liquid Ps (step S30).
藉由攪槳70攪拌鍍覆液Ps,可提高鍍覆液Ps之均質性。此外,藉由攪槳70攪拌鍍覆液Ps,亦可達到以下說明之效果。The plating liquid Ps can be stirred by the stirring paddle 70 to improve the homogeneity of the plating liquid Ps. In addition, the plating liquid Ps can be stirred by the stirring paddle 70 to achieve the following effects.
具體而言,鍍覆槽10之鍍覆液Ps中會產生氣泡Bu。例如,在鍍覆槽10中供給鍍覆液Ps時,空氣與鍍覆液Ps一起流入鍍覆槽10時,可能該空氣會變成氣泡Bu。Specifically, bubbles Bu are generated in the coating liquid Ps of the coating tank 10. For example, when the coating liquid Ps is supplied to the coating tank 10, when air flows into the coating tank 10 together with the coating liquid Ps, the air may become bubbles Bu.
如上述,鍍覆槽10之鍍覆液Ps中產生氣泡Bu時,該氣泡Bu會附著在離子阻力體12之孔12a上(參照圖4)。若未藉由攪槳70攪拌鍍覆液Ps時,可能該氣泡Bu會大量附著在孔12a上。此種狀態下對基板Wf實施鍍覆處理時,可能會因為該氣泡Bu導致基板Wf之鍍覆品質惡化。As described above, when bubbles Bu are generated in the coating liquid Ps in the coating tank 10, the bubbles Bu will adhere to the holes 12a of the ion resistor 12 (see FIG. 4 ). If the coating liquid Ps is not stirred by the stirrer 70, a large amount of bubbles Bu may adhere to the holes 12a. In this state, when the substrate Wf is subjected to coating treatment, the coating quality of the substrate Wf may be deteriorated due to the bubbles Bu.
相對而言,採用本實施形態時,藉由攪槳70攪拌鍍覆液Ps,可促進附著於離子阻力體12之孔12a的氣泡Bu向上方移動。藉此,可將附著於孔12a之氣泡Bu抽到上方而從孔12a除去。結果,可抑制因附著於孔12a之氣泡Bu導致基板Wf的鍍覆品質惡化。In contrast, when the present embodiment is adopted, the stirring of the coating liquid Ps by the stirring paddle 70 can promote the upward movement of the bubbles Bu attached to the holes 12a of the ion resistor 12. Thus, the bubbles Bu attached to the holes 12a can be sucked upward and removed from the holes 12a. As a result, the degradation of the coating quality of the substrate Wf due to the bubbles Bu attached to the holes 12a can be suppressed.
參照圖6,在步驟S30後,藉由通電裝置(無圖示)而在陽極11與基板Wf之間通過電流,開始對基板Wf進行鍍覆處理(步驟S40)。藉此,開始對基板Wf之被鍍覆面Wfa形成鍍覆皮膜。具體而言,本實施形態即使在該步驟S40之對基板Wf執行鍍覆處理中,仍然藉由步驟S30之攪槳70進行鍍覆液Ps的攪拌(亦即,攪拌鍍覆液Ps,並且對被鍍覆面Wfa進行鍍覆皮膜的形成)。Referring to FIG. 6 , after step S30, a current is passed between the anode 11 and the substrate Wf by an energizing device (not shown), and the substrate Wf is started to be plated (step S40). Thus, a coating film is formed on the plated surface Wfa of the substrate Wf. Specifically, in this embodiment, even when the substrate Wf is plated in step S40, the plating liquid Ps is still stirred by the stirring paddle 70 in step S30 (that is, the plating liquid Ps is stirred and a plating film is formed on the plated surface Wfa).
另外,攪槳70攪拌鍍覆液Ps之時期,並非限定於上述時期者。例如,即使在步驟S10與步驟S20之間的時期(亦即,在鍍覆槽10中供給鍍覆液Ps後,且基板Wf被浸漬於鍍覆液Ps之前的時期),亦可藉由攪槳70攪拌鍍覆液Ps。In addition, the period when the plating liquid Ps is stirred by the stirring paddle 70 is not limited to the above period. For example, the plating liquid Ps may be stirred by the stirring paddle 70 even in the period between step S10 and step S20 (i.e., after the plating liquid Ps is supplied to the plating tank 10 and before the substrate Wf is immersed in the plating liquid Ps).
圖7係用於說明攪槳70之詳細動作的流程圖之一例。具體而言,該圖7顯示攪槳70在圖6之步驟S30中的詳細動作。主要參照圖5及圖7說明攪槳70之詳細動作如下。Fig. 7 is an example of a flow chart for explaining the detailed operation of the impeller 70. Specifically, Fig. 7 shows the detailed operation of the impeller 70 in step S30 of Fig. 6. The detailed operation of the impeller 70 is explained mainly with reference to Fig. 5 and Fig. 7 as follows.
首先,參照圖5,將各個梁構件71在第一方向之排列間距設為「d(mm)」,將各個梁構件71在第一方向之寬度設為「W(mm)」,並將攪槳70之往返移動次數設為「n(次)」。另外,往返移動次數例如係當攪槳70在第一方向移動後,又在第二方向移動時統計為「1次」。First, referring to FIG. 5 , the arrangement pitch of each beam member 71 in the first direction is set to “d (mm)”, the width of each beam member 71 in the first direction is set to “W (mm)”, and the number of reciprocating movements of the paddle 70 is set to “n (times)”. In addition, the number of reciprocating movements is counted as “1 time” when the paddle 70 moves in the first direction and then moves in the second direction.
參照圖7,首先,攪槳70藉由接受了控制模組800之指示的驅動裝置77受驅動,而以以下說明之「第一往返樣態」往返移動(步驟S31)。7 , first, the paddle 70 is driven by the driving device 77 receiving an instruction from the control module 800 to reciprocate in a “first reciprocating pattern” described below (step S31 ).
該第一往返樣態下,攪槳70藉由以與在第一方向移動時之行程不同的行程在第二方向移動,而使攪槳70從第二方向改變移動方向成第一方向時之梁構件71的位置(亦即,攪槳70往返移動1次時之開始移動位置(亦即,「起點」));及攪槳70從第一方向改變移動方向成第二方向時之梁構件71的位置(亦即,攪槳70往返移動1次時之折返位置(亦即,「終點」))不同。藉此,可使鍍覆處理中之梁構件71的平均滯留時間均勻化。In the first reciprocating pattern, the paddle 70 moves in the second direction with a stroke different from that when it moves in the first direction, so that the position of the beam member 71 when the paddle 70 changes its moving direction from the second direction to the first direction (i.e., the starting position (i.e., the "starting point") when the paddle 70 moves back and forth once); and the position of the beam member 71 when the paddle 70 changes its moving direction from the first direction to the second direction (i.e., the turning position (i.e., the "end point") when the paddle 70 moves back and forth once) are different. In this way, the average retention time of the beam member 71 in the coating process can be made uniform.
一例為本實施形態在該第一往返樣態下,在第二方向移動時之攪槳70的行程比在第一方向移動時之攪槳70的行程短。具體而言,該第一往返樣態之一例為本實施形態之攪槳70進行1次以上在第一方向以「A(mm)」之行程移動,接著,在第二方向以「A-W(mm)」之行程移動。One example is that in this embodiment, in the first reciprocating pattern, the stroke of the impeller 70 when moving in the second direction is shorter than the stroke of the impeller 70 when moving in the first direction. Specifically, one example of the first reciprocating pattern is that the impeller 70 of this embodiment moves in the first direction with a stroke of "A (mm)" more than once, and then moves in the second direction with a stroke of "A-W (mm)".
亦即,在第一往返樣態下,攪槳70在第一方向移動「A(mm)」後,在第二方向移動「A-W(mm)」。如此,在第一往返樣態下,攪槳70在第二方向移動之距離,比攪槳70向第一方向移動之距離縮短「W(mm)」程度。結果,在第一往返樣態下,攪槳70開始往返移動之位置每往返1次在第一方向偏差「W(mm)」程度。That is, in the first reciprocating pattern, the paddle 70 moves "A (mm)" in the first direction and then moves "A-W (mm)" in the second direction. Thus, in the first reciprocating pattern, the distance the paddle 70 moves in the second direction is shorter by "W (mm)" than the distance the paddle 70 moves in the first direction. As a result, in the first reciprocating pattern, the position where the paddle 70 starts to reciprocate deviates by "W (mm)" in the first direction for each reciprocating movement.
但是,步驟S31並非限定於上述構成者,例如,在步驟S31中,第二方向之行程亦可係比「A(mm)」短,且比「A-W(mm)」大之值。However, step S31 is not limited to the above-mentioned structure. For example, in step S31, the stroke in the second direction may be shorter than "A (mm)" and larger than "A-W (mm)".
接著,控制模組800判定攪槳70是否已複數次往返移動(步驟S32)。該一例為本實施形態之控制模組800判定是否滿足「W×n>d」之關係。亦即,在步驟S32中,控制模組800判定梁構件71之寬度(W)乘上攪槳70的往返移動次數(n)之值,是否比梁構件71之排列間距(d)大。Next, the control module 800 determines whether the paddle 70 has moved back and forth multiple times (step S32). This example is the control module 800 of this embodiment determining whether the relationship "W×n>d" is satisfied. That is, in step S32, the control module 800 determines whether the value of the width (W) of the beam member 71 multiplied by the number of times (n) the paddle 70 moves back and forth is greater than the arrangement pitch (d) of the beam member 71.
通常,步驟S31之攪槳70以第一往返樣態的往返移動係執行至在步驟S32判定為Yes(是)。Normally, the reciprocating movement of the paddle 70 in the first reciprocating pattern in step S31 is performed until a Yes decision is made in step S32.
在步驟S32判定為Yes時(亦即,滿足「W×n>d」之關係時),藉由接受控制模組800之指示的驅動裝置77受驅動,而攪槳70以以下說明之「第二往返樣態」往返移動(步驟S33)。亦即,本實施形態之攪槳70在以第一往返樣態複數次往返移動後,再以第二往返樣態往返移動。When the determination in step S32 is Yes (i.e., the relationship "W×n>d" is satisfied), the driving device 77 receiving the instruction of the control module 800 is driven, and the paddle 70 reciprocates in the "second reciprocating pattern" described below (step S33). That is, the paddle 70 of this embodiment reciprocates a plurality of times in the first reciprocating pattern, and then reciprocates in the second reciprocating pattern.
該第二往返樣態下,攪槳70藉由以比在第一方向移動時之行程長的行程在第二方向移動,使攪槳70在從第二方向改變移動方向成第一方向時之梁構件71的位置(起點)、及攪槳70從第一方向改變移動方向成第二方向時之梁構件71的位置(終點)不同。藉此,使在鍍覆處理中之梁構件71的平均滯留時間均勻化。In the second reciprocating pattern, the paddle 70 moves in the second direction with a longer stroke than when it moves in the first direction, so that the position (starting point) of the beam member 71 when the paddle 70 changes its moving direction from the second direction to the first direction and the position (end point) of the beam member 71 when the paddle 70 changes its moving direction from the first direction to the second direction are different. In this way, the average retention time of the beam member 71 in the coating process is made uniform.
具體而言,該第二往返樣態之一例為本實施形態之攪槳70進行1次以上在第一方向以「A-W(mm)」之行程移動,接著,在第二方向以「A(mm)」之行程移動。Specifically, an example of the second reciprocating pattern is that the paddle 70 of the present embodiment moves with a stroke of "A-W (mm)" in the first direction more than once, and then moves with a stroke of "A (mm)" in the second direction.
亦即,在第二往返樣態下,攪槳70在第一方向移動「A-W(mm)」後,在第二方向移動「A(mm)」。亦即,在第二往返樣態下,攪槳70在第一方向移動之距離比攪槳70向第二方向移動之距離縮短「W(mm)」程度。結果,在第二往返樣態下,攪槳70開始往返移動之位置每往返1次在第二方向偏差「W(mm)」程度。That is, in the second reciprocating pattern, the paddle 70 moves "A-W (mm)" in the first direction and then moves "A (mm)" in the second direction. That is, in the second reciprocating pattern, the distance the paddle 70 moves in the first direction is shorter by "W (mm)" than the distance the paddle 70 moves in the second direction. As a result, in the second reciprocating pattern, the position where the paddle 70 starts to reciprocate deviates by "W (mm)" in the second direction for each reciprocating movement.
但是,步驟S33並非限定於上述構成者,例如在步驟S33中,亦可在第一方向之行程係比「A(mm)」短,且比「A-W(mm)」大之值。However, step S33 is not limited to the above-mentioned structure. For example, in step S33, the stroke in the first direction may be shorter than "A (mm)" and larger than "A-W (mm)".
使攪槳70以第二往返樣態而往返移動結束的時期並非特別限定者,不過本實施形態之控制模組800的一例為攪槳70開始以第二往返樣態而往返移動起,攪槳70之往返移動次數為「n(次)(此與步驟S32之n相同值)」時,使攪槳70以第二往返樣態之往返移動結束。The time period for completing the reciprocating movement of the paddle 70 in the second reciprocating pattern is not particularly limited, but an example of the control module 800 of the present embodiment is that when the paddle 70 starts to reciprocate in the second reciprocating pattern and the number of reciprocating movements of the paddle 70 reaches "n (times) (this is the same value as n in step S32)", the reciprocating movement of the paddle 70 in the second reciprocating pattern is completed.
攪槳70以第二往返樣態之往返移動結束時,控制模組800亦可從步驟S31起再度執行圖7之流程圖(亦即,亦可反覆執行圖7之流程圖)。此外,控制模組800亦可在圖7之流程圖的任意時期,接受到使攪槳70之驅動強制性停止的要旨之停止驅動要求情況下,亦可使圖7之流程圖的執行強制性結束,而使攪槳70之驅動停止。When the paddle 70 completes the reciprocating movement in the second reciprocating pattern, the control module 800 may execute the flowchart of FIG. 7 again from step S31 (that is, the flowchart of FIG. 7 may be repeatedly executed). In addition, when the control module 800 receives a drive stop request for forcibly stopping the drive of the paddle 70 at any time in the flowchart of FIG. 7 , the execution of the flowchart of FIG. 7 may be forcibly terminated to stop the drive of the paddle 70.
採用如以上說明之本實施形態時,由於攪槳70之往返移動的樣態包含有第一往返樣態,因此,攪槳70從第一方向改變移動方向成第二方向時、及從第二方向改變移動方向成第一方向時(亦即,攪槳70之往返移動時的速度變成零時),可使攪槳70之梁構件71不致位於相同部位。藉此,可縮小攪槳70之梁構件71引起遮蔽電場的影響。結果,可使基板Wf之鍍覆品質提高。具體而言,例如可使形成於基板Wf之鍍覆皮膜之膜厚的均勻性提高。When the present embodiment described above is adopted, since the reciprocating movement pattern of the impeller 70 includes the first reciprocating pattern, when the impeller 70 changes its movement direction from the first direction to the second direction, and when the impeller 70 changes its movement direction from the second direction to the first direction (that is, when the speed of the impeller 70 during the reciprocating movement becomes zero), the beam member 71 of the impeller 70 can be prevented from being located at the same position. In this way, the influence of the beam member 71 of the impeller 70 causing the shielding electric field can be reduced. As a result, the coating quality of the substrate Wf can be improved. Specifically, for example, the uniformity of the film thickness of the coating film formed on the substrate Wf can be improved.
再者,採用本實施形態時,由於攪槳70之往返移動的樣態進一步包含第二往返樣態,因此可更加縮小攪槳70之梁構件71引起遮蔽電場的影響。結果,可使基板Wf之鍍覆品質更提高。Furthermore, when this embodiment is adopted, since the reciprocating motion pattern of the paddle 70 further includes the second reciprocating pattern, the influence of the shielding electric field caused by the beam member 71 of the paddle 70 can be further reduced. As a result, the coating quality of the substrate Wf can be further improved.
另外,本實施形態之構成並非限定於上述構成者,例如在第二往返樣態下,亦可攪槳70往返移動時之行程一定。具體而言,此時,在第二往返樣態下,攪槳70亦可以A(mm)之行程在第一方向及第二方向移動。即使此時,若攪槳70之往返移動包含上述的第一往返樣態時,仍可縮小攪槳70之梁構件71引起遮蔽電場的影響。In addition, the configuration of this embodiment is not limited to the above configuration. For example, in the second reciprocating mode, the stroke of the paddle 70 during reciprocating movement may be constant. Specifically, in this case, in the second reciprocating mode, the paddle 70 may also move in the first direction and the second direction with a stroke of A (mm). Even in this case, if the reciprocating movement of the paddle 70 includes the above first reciprocating mode, the effect of shielding the electric field caused by the beam member 71 of the paddle 70 can still be reduced.
此外,第一往返樣態下,亦可攪槳70在第二方向移動時之行程比在第一方向移動時的行程長。例如,此時,在第一往返樣態下,攪槳70亦可在第一方向以「A-W(mm)」之行程移動,接著,在第二方向以「A(mm)」之行程移動。而後,此時,在第二往返樣態下,攪槳70在第二方向移動時之行程宜比在第一方向移動時的行程短。例如,此時,在第二往返樣態下,攪槳70只須在第一方向以「A(mm)」之行程移動,接著,在第二方向以「A-W(mm)」之行程移動即可。 (變化例1) In addition, in the first reciprocating pattern, the stroke of the paddle 70 when it moves in the second direction may be longer than that when it moves in the first direction. For example, at this time, in the first reciprocating pattern, the paddle 70 may also move in the first direction with a stroke of "A-W (mm)", and then move in the second direction with a stroke of "A (mm)". Then, at this time, in the second reciprocating pattern, the stroke of the paddle 70 when it moves in the second direction should be shorter than that when it moves in the first direction. For example, at this time, in the second reciprocating pattern, the paddle 70 only needs to move in the first direction with a stroke of "A (mm)", and then move in the second direction with a stroke of "A-W (mm)". (Variation 1)
圖8(A)及圖8(B)係用於說明實施形態之變化例1的鍍覆裝置1000之示意圖。具體而言,圖8(A)及圖8(B)係示意性放大顯示本變化例之鍍覆裝置1000的離子阻力體12之周邊構成的剖面圖。另外,在圖8(A)及圖8(B)中,攪槳70例示有其1個梁構件71。Fig. 8 (A) and Fig. 8 (B) are schematic diagrams for explaining the coating device 1000 of the variation 1 of the embodiment. Specifically, Fig. 8 (A) and Fig. 8 (B) are schematic enlarged cross-sectional views showing the peripheral structure of the ion resistance body 12 of the coating device 1000 of the variation. In addition, in Fig. 8 (A) and Fig. 8 (B), the paddle 70 is illustrated with one beam member 71 thereof.
本變化例與前述實施形態不同之處為在第一往返樣態及第二往返樣態下的至少1個樣態下,攪槳70在第一方向複數次移動時,或攪槳70在第二方向複數次移動時,攪槳70係以不同之速度移動。The present variation differs from the aforementioned implementation in that in at least one of the first reciprocating pattern and the second reciprocating pattern, when the paddle 70 moves multiple times in the first direction, or when the paddle 70 moves multiple times in the second direction, the paddle 70 moves at different speeds.
該具體例為本變化例在第一往返樣態及第二往返樣態「兩者」下,攪槳70在第一方向複數次移動時,或攪槳70在第二方向複數次移動時,攪槳70係以不同速度移動。The specific example is that in the present variation, in both the first reciprocating pattern and the second reciprocating pattern, when the paddle 70 moves multiple times in the first direction, or when the paddle 70 moves multiple times in the second direction, the paddle 70 moves at different speeds.
該一例為圖8(A)及圖8(B)例示攪槳70在「第一方向」複數次移動時,攪槳70以不同速度移動的情形。具體而言,如圖8(A)所例示,本變化例之第一往返樣態及第二往返樣態包含:攪槳70在第一方向以「第一速度V1(mm/sec,或rpm)移動;與如圖8(B)所例示,攪槳70在第一方向以比第一速度V1快的「第二速度V2(mm/sec,或rpm)移動。This example is a case where the paddle 70 moves at different speeds when it moves multiple times in the "first direction" as shown in FIG8 (A) and FIG8 (B). Specifically, as shown in FIG8 (A), the first reciprocating pattern and the second reciprocating pattern of this variation include: the paddle 70 moves in the first direction at a "first speed V1 (mm/sec, or rpm); and as shown in FIG8 (B), the paddle 70 moves in the first direction at a "second speed V2 (mm/sec, or rpm)" that is faster than the first speed V1.
具體而言,本變化例之接受了控制模組800之指示的驅動裝置77在第一往返樣態及第二往返樣態下,使攪槳70複數次在第一方向移動時,向該第一方向複數次移動中,一部分次數係使攪槳70以第一速度V1移動,其餘次數係使攪槳70以第二速度V2移動。Specifically, in the present variation, the driving device 77 receiving the instruction of the control module 800 moves the paddle 70 in the first direction multiple times in the first reciprocating mode and the second reciprocating mode. Among the multiple movements in the first direction, a portion of the movements moves the paddle 70 at the first speed V1, and the remaining movements moves the paddle 70 at the second speed V2.
另外,上述情況下,驅動裝置77使攪槳70在第二方向移動時,只須使攪槳70例如以從第一速度V1及第二速度V2中選擇之1個速度(亦即,一定速度)移動即可。In addition, in the above case, when the driving device 77 moves the paddle 70 in the second direction, it is only necessary to move the paddle 70 at one speed (ie, a constant speed) selected from the first speed V1 and the second speed V2.
或是,本變化例亦可構成攪槳70在「第二方向」以不同速度複數次移動。具體而言,此時,在第一往返樣態及第二往返樣態下之至少1個樣態下,包含:攪槳70在第二方向以第一速度V1移動;與攪槳70在第二方向以第二速度V2移動。Alternatively, this variation may also be configured such that the paddle 70 moves multiple times at different speeds in the "second direction". Specifically, at least one of the first reciprocating pattern and the second reciprocating pattern includes: the paddle 70 moves in the second direction at a first speed V1; and the paddle 70 moves in the second direction at a second speed V2.
採用本變化例時,藉由攪槳70在第一方向以不同速度複數次移動,或是藉由在第二方向以不同速度複數次移動,可有效除去附著於離子阻力體12之孔12a的氣泡Bu。藉此,可抑制因附著於離子阻力體12之孔12a的氣泡Bu導致晶圓W之鍍覆品質惡化(亦即,可使基板Wf之鍍覆品質提高)。When this variation is adopted, the bubbles Bu attached to the holes 12a of the ion resistor 12 can be effectively removed by moving the stirrer 70 multiple times at different speeds in the first direction or multiple times at different speeds in the second direction. In this way, the deterioration of the coating quality of the wafer W due to the bubbles Bu attached to the holes 12a of the ion resistor 12 can be suppressed (that is, the coating quality of the substrate Wf can be improved).
具體而言,採用本變化例時,如圖8(A)所例示,當攪槳70以相對低速移動情況下,將附著於離子阻力體12之孔12a的相對大尺寸之氣泡Bu抽到上方,可從孔12a有效除去。Specifically, when this variation is adopted, as shown in FIG. 8(A), when the paddle 70 moves at a relatively low speed, relatively large bubbles Bu attached to the holes 12a of the ion resistance body 12 are sucked upward and can be effectively removed from the holes 12a.
另一方面,如圖8(B)所例示,攪槳70以相對高速移動情況下,抽上附著於離子阻力體12之孔12a的相對小尺寸之氣泡Bu(亦即,攪槳70以低速移動時未被抽上之尺寸的氣泡Bu),可從孔12a有效除去。On the other hand, as shown in FIG. 8 (B), when the paddle 70 moves at a relatively high speed, relatively small-sized bubbles Bu attached to the holes 12a of the ion resistance body 12 (i.e., bubbles Bu of a size that are not drawn when the paddle 70 moves at a low speed) can be effectively removed from the holes 12a.
具體而言,此時,藉由攪槳70以第二速度V2移動,可在攪槳70之梁構件71與離子阻力體12的上面之間有效形成鍍覆液Ps之渦流Sw。藉由該渦流Sw,即使附著於孔12a之氣泡Bu的尺寸小時,仍可有效抽上該氣泡Bu並從離子阻力體12除去。如此,採用本變化例時,可有效除去附著於離子阻力體12之孔12a的不同尺寸之氣泡Bu。Specifically, at this time, by moving the impeller 70 at the second speed V2, a vortex Sw of the coating liquid Ps can be effectively formed between the beam member 71 of the impeller 70 and the upper surface of the ion resistor 12. By the vortex Sw, even if the size of the bubble Bu attached to the hole 12a is small, the bubble Bu can be effectively sucked up and removed from the ion resistor 12. In this way, when this variation is adopted, the bubble Bu of different sizes attached to the hole 12a of the ion resistor 12 can be effectively removed.
另外,第一速度V1之具體數值並非特別限定者,例如可使用可從離子阻力體12之孔12a除去尺寸(最大外形尺寸)超過基準值的氣泡Bu之速度。該第一速度V1例如藉由實驗等求出適當值即可。此外,第二速度V2之具體數值只要是比第一速度V1快的速度即可,並非特別限定者,例如可使用可從孔12a除去尺寸未達基準值之氣泡Bu的速度。該第二速度V2亦為例如藉由實驗等求出適當值即可。In addition, the specific value of the first speed V1 is not particularly limited, and for example, a speed that can remove the air bubbles Bu whose size (maximum outer size) exceeds the reference value from the hole 12a of the ion resistor 12 can be used. The first speed V1 can be appropriately determined by experiments, etc. In addition, the specific value of the second speed V2 can be any speed faster than the first speed V1, and is not particularly limited. For example, a speed that can remove the air bubbles Bu whose size does not reach the reference value from the hole 12a can be used. The second speed V2 can also be appropriately determined by experiments, etc.
另外,舉出第一速度V1與第二速度V2之恰當比率的一例時,第二速度V2可使用約為第一速度V1之1.5倍以上的速度。 (變化例2) In addition, as an example of an appropriate ratio between the first speed V1 and the second speed V2, the second speed V2 can be a speed of about 1.5 times or more of the first speed V1. (Variation 2)
圖9(A)及圖9(B)係用於說明實施形態之變化例2的鍍覆裝置1000之示意圖。具體而言,圖9(A)及圖9(B)係示意性放大顯示本變化例之鍍覆裝置1000的離子阻力體12之周邊構成的剖面圖。另外,在圖9(A)及圖9(B)中,攪槳70例示有其1個梁構件71。Fig. 9 (A) and Fig. 9 (B) are schematic diagrams of a coating device 1000 for explaining a second variation of the embodiment. Specifically, Fig. 9 (A) and Fig. 9 (B) are schematic enlarged cross-sectional views showing the peripheral structure of the ion resistance body 12 of the coating device 1000 of this variation. In addition, in Fig. 9 (A) and Fig. 9 (B), the paddle 70 is illustrated with one beam member 71 thereof.
本變化例與前述之實施形態及變化例1不同之處為在第一往返樣態及第二往返樣態下之至少1個樣態下,攪槳70在第一方向以「第一速度V1」移動後(參照圖9(A)),在第二方向以與第一速度不同之「第二速度V2」移動(參照圖9(B))。The present variation differs from the aforementioned implementation form and variation 1 in that in at least one of the first reciprocating pattern and the second reciprocating pattern, the paddle 70 moves in the first direction at a "first speed V1" (see FIG. 9 (A)), and then moves in the second direction at a "second speed V2" different from the first speed (see FIG. 9 (B)).
亦即,本變化例之接受了控制模組800之指示的驅動裝置77在第一往返樣態及第二往返樣態中之至少1個樣態下,重複複數次使攪槳70在第一方向以第一速度V1移動後,在第二方向以第二速度V2移動。That is, the driving device 77 of this variation, which receives the instruction of the control module 800, repeatedly moves the paddle 70 in the first direction at the first speed V1 and then moves it in the second direction at the second speed V2 in at least one of the first reciprocating mode and the second reciprocating mode.
另外,本變化例中,第二速度V2之一例為比第一速度V1快的速度。但是,並非限定於該構成者,第二速度V2亦可係比第一速度V1慢之速度。In addition, in this modification, an example of the second speed V2 is a speed faster than the first speed V1. However, the present invention is not limited to this configuration, and the second speed V2 may also be a speed slower than the first speed V1.
採用本變化例時,在攪槳70往返1次時,攪槳70可以第一速度V1及第二速度V2移動。藉此,可有效除去附著於離子阻力體12之孔12a的氣泡Bu。結果,可使基板Wf之鍍覆品質提高。When this modification is adopted, the impeller 70 can move at the first speed V1 and the second speed V2 when the impeller 70 reciprocates once. This can effectively remove the bubbles Bu attached to the holes 12a of the ion resistor 12. As a result, the coating quality of the substrate Wf can be improved.
具體而言,當攪槳70往返1次時,攪槳70以相對低速移動時(圖9(A)),可將附著於離子阻力體12之孔12a的相對大尺寸之氣泡Bu抽到上方,並從孔12a有效除去。另外,攪槳70以相對高速移動時(圖9(B)),可將附著於離子阻力體12之孔12a的相對小尺寸之氣泡Bu抽到上方,並從孔12a有效除去。 (其他變化例) Specifically, when the paddle 70 moves back and forth once, when the paddle 70 moves at a relatively low speed (Fig. 9 (A)), the relatively large-sized bubbles Bu attached to the hole 12a of the ion resistance body 12 can be sucked up and effectively removed from the hole 12a. In addition, when the paddle 70 moves at a relatively high speed (Fig. 9 (B)), the relatively small-sized bubbles Bu attached to the hole 12a of the ion resistance body 12 can be sucked up and effectively removed from the hole 12a. (Other variations)
另外,上述變化例1及變化例2中,攪槳70往返移動時之行程亦可一定。亦即,此時,攪槳70於往返移動時亦可分別在第一方向及第二方向各以A(mm)移動。採用該構成時,雖然難以達到前述實施形態中特有的作用效果,不過可達到變化例1及變化例2中特有之作用效果(除去附著於離子阻力體12之孔12a的氣泡Bu,而使基板Wf之鍍覆品質提高的作用效果)。In addition, in the above-mentioned Modification 1 and Modification 2, the stroke of the impeller 70 when it moves back and forth may also be constant. That is, in this case, the impeller 70 may also move by A (mm) in the first direction and the second direction respectively when it moves back and forth. When this structure is adopted, although it is difficult to achieve the unique effects of the above-mentioned embodiment, the unique effects of Modification 1 and Modification 2 (the effect of removing the bubbles Bu attached to the holes 12a of the ion resistor 12 and improving the plating quality of the substrate Wf) can be achieved.
以上,詳述了本發明之實施形態及變化例,不過本發明並非限定於該特定之實施形態及變化例者,在本發明之要旨的範圍內當然可進行各種變化及變更。The embodiments and variations of the present invention have been described in detail above. However, the present invention is not limited to the specific embodiments and variations, and various modifications and changes can be made within the scope of the gist of the present invention.
10:鍍覆槽 10a:底壁 10b:外周壁 11:陽極 12:離子阻力體 12a:孔 13a:第一供給口 13b:第二供給口 14a:第一排出口 14b:第二排出口 16:膜 17a:陽極室 17b:陰極室 20:溢流槽 30:基板固持器 31:環 40:旋轉機構 45:傾斜機構 50:升降機構 51:支軸 70:攪槳 71:梁構件 72a:第一連結構件 72b:第二連結構件 77:驅動裝置 77a:直線馬達 400:鍍覆模組 800:控制模組 801:處理器 802:記憶裝置 1000:鍍覆裝置 Bu:氣泡 D1:基板寬度 d:排列間距 MA:移動區域 PA:孔形成區域 Ps:鍍覆液 Sw:渦流 V1:第一速度 V2:第二速度 W:寬度 Wf:基板 Wfa:被鍍覆面 10: coating groove 10a: bottom wall 10b: outer peripheral wall 11: anode 12: ion resistance body 12a: hole 13a: first supply port 13b: second supply port 14a: first discharge port 14b: second discharge port 16: membrane 17a: anode chamber 17b: cathode chamber 20: overflow tank 30: substrate holder 31: ring 40: rotation mechanism 45: tilting mechanism 50: lifting mechanism 51: support shaft 70: paddle 71: beam member 72a: first connecting member 72b: second connecting member 77: driving device 77a: linear motor 400: coating module 800: control module 801: processor 802: memory device 1000: coating device Bu: bubble D1: substrate width d: arrangement pitch MA: moving area PA: hole forming area Ps: coating liquid Sw: vortex V1: first speed V2: second speed W: width Wf: substrate Wfa: coated surface
圖1係顯示實施形態之鍍覆裝置的整體構成之立體圖。 圖2係顯示實施形態之鍍覆裝置的整體構成之俯視圖。 圖3係顯示實施形態之鍍覆裝置中的鍍覆模組之構成的示意圖。 圖4係顯示實施形態之將基板浸漬於鍍覆液的狀態之示意圖。 圖5係實施形態之攪槳的示意俯視圖。 圖6係用於說明實施形態之從供給鍍覆液至開始鍍覆處理的一連串動作之流程圖。 圖7係用於說明實施形態之攪槳的詳細動作之流程圖的一例。 圖8(A)及圖8(B)係用於說明實施形態之變化例1的鍍覆裝置之示意圖。 圖9(A)及圖9(B)係用於說明實施形態之變化例2的鍍覆裝置之示意圖。 FIG. 1 is a perspective view showing the overall structure of the coating device of the embodiment. FIG. 2 is a top view showing the overall structure of the coating device of the embodiment. FIG. 3 is a schematic diagram showing the structure of the coating module in the coating device of the embodiment. FIG. 4 is a schematic diagram showing the state of immersing the substrate in the coating liquid of the embodiment. FIG. 5 is a schematic top view of the stirring paddle of the embodiment. FIG. 6 is a flow chart for explaining a series of actions from supplying the coating liquid to starting the coating process of the embodiment. FIG. 7 is an example of a flow chart for explaining the detailed actions of the stirring paddle of the embodiment. Figures 8 (A) and 8 (B) are schematic diagrams of a coating device for illustrating variation 1 of the implementation form. Figures 9 (A) and 9 (B) are schematic diagrams of a coating device for illustrating variation 2 of the implementation form.
70:攪槳 71:梁構件 72a:第一連結構件 72b:第二連結構件 77:驅動裝置 77a:直線馬達 d:排列間距 W:寬度 70: paddle 71: beam member 72a: first connecting member 72b: second connecting member 77: driving device 77a: linear motor d: arrangement spacing W: width
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014185375A (en) * | 2013-03-25 | 2014-10-02 | Ebara Corp | Plating apparatus |
| TW202100809A (en) * | 2019-04-11 | 2021-01-01 | 英商Spts科技公司 | Apparatus and method for processing a substrate |
| JP7069442B1 (en) * | 2021-12-06 | 2022-05-17 | 株式会社荏原製作所 | Plating method and plating equipment |
| TW202231931A (en) * | 2021-02-04 | 2022-08-16 | 大陸商盛美半導體設備(上海)股份有限公司 | Electroplating apparatus and electroplating method |
| TW202244333A (en) * | 2021-02-19 | 2022-11-16 | 日商荏原製作所股份有限公司 | Plating apparatus and plating method |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014185375A (en) * | 2013-03-25 | 2014-10-02 | Ebara Corp | Plating apparatus |
| TW202100809A (en) * | 2019-04-11 | 2021-01-01 | 英商Spts科技公司 | Apparatus and method for processing a substrate |
| TW202231931A (en) * | 2021-02-04 | 2022-08-16 | 大陸商盛美半導體設備(上海)股份有限公司 | Electroplating apparatus and electroplating method |
| TW202244333A (en) * | 2021-02-19 | 2022-11-16 | 日商荏原製作所股份有限公司 | Plating apparatus and plating method |
| JP7069442B1 (en) * | 2021-12-06 | 2022-05-17 | 株式会社荏原製作所 | Plating method and plating equipment |
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