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TWI872005B - Adsorption device and adsorption machine - Google Patents

Adsorption device and adsorption machine Download PDF

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TWI872005B
TWI872005B TW113132701A TW113132701A TWI872005B TW I872005 B TWI872005 B TW I872005B TW 113132701 A TW113132701 A TW 113132701A TW 113132701 A TW113132701 A TW 113132701A TW I872005 B TWI872005 B TW I872005B
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vacuum
space
top surface
exhaust
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TW113132701A
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TW202501708A (en
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楊承翰
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南亞科技股份有限公司
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Abstract

An adsorption device includes a carrier with a top surface. The carrier includes a peripheral wall, a partition wall, and a plurality of air suction ports. The peripheral wall is connected to an edge of the top surface. The top surface and the peripheral wall surround to form an air extraction space. The partition wall is connected to the top surface and divides the air extraction space into a plurality of air extraction subspaces. The air extraction ports are communicated to the top surface and respectively located in the air extraction subspaces.

Description

吸附裝置及吸附機臺Adsorption device and adsorption machine

本揭露是關於一種吸附裝置,特別是關於一種吸附晶圓的吸附裝置。The present disclosure relates to a suction device, and more particularly to a suction device for suctioning wafers.

晶圓加工的過程中,透過將晶圓置於載台上,在載台和晶圓之間的空間抽氣形成真空狀態,以利用壓力差固定住晶圓方便後續的加工處理。During the wafer processing process, the wafer is placed on a carrier, and the space between the carrier and the wafer is evacuated to form a vacuum state, so that the pressure difference can be used to fix the wafer for subsequent processing.

然而,在加工的過程中,會因為許多狀況造成真空狀態被破壞。造成此問題的原因可能是因為微粒汙染導致微粒附著在晶圓或是載台上致使載台和晶圓之間的空間無法密閉,或是因為晶圓的磨損、晶圓的彎曲造成載台和晶圓之間原本應是密閉的空間產生縫隙。However, during the processing, the vacuum state may be destroyed due to many circumstances. The cause of this problem may be that particles are attached to the wafer or the stage due to contamination, making the space between the stage and the wafer unable to be sealed, or that the wear and bending of the wafer causes a gap in the space between the stage and the wafer, which should have been sealed.

真空狀態被破壞的載台容易因為失去固定晶圓的壓力差而導致晶圓掉落進而破損或是汙染晶圓,造成產品的損失。The carrier whose vacuum state is destroyed is prone to cause the wafer to fall and break or contaminate due to the loss of pressure difference to fix the wafer, resulting in product loss.

因此,如何提出一種可解決上述問題的吸附裝置,是目前業界亟欲投入研發資源解決的問題之一。Therefore, how to come up with an adsorption device that can solve the above problems is one of the problems that the industry is eager to invest research and development resources to solve.

有鑑於此,本揭露的一目的在於提出一種可解決上述問題的吸附裝置。In view of this, an object of the present disclosure is to provide an adsorption device that can solve the above-mentioned problem.

為了達到上述目的,依據本揭露的一實施方式,一種吸附裝置包含具有頂面的載台。載台配置以吸附晶圓。載台包含抽氣空間以及複數個抽氣口。抽氣空間形成於頂面上,並包含彼此分隔的複數個抽氣子空間。複數個抽氣口連通頂面,並分別位於抽氣子空間內。In order to achieve the above-mentioned purpose, according to an embodiment of the present disclosure, an adsorption device includes a carrier having a top surface. The carrier is configured to adsorb a wafer. The carrier includes an exhaust space and a plurality of exhaust ports. The exhaust space is formed on the top surface and includes a plurality of exhaust sub-spaces separated from each other. The plurality of exhaust ports are connected to the top surface and are respectively located in the exhaust sub-spaces.

在本揭露的一或多個實施方式中,吸附裝置進一步包含真空度感測器。真空度感測器位於抽氣空間內。In one or more embodiments of the present disclosure, the adsorption device further comprises a vacuum sensor. The vacuum sensor is located in the evacuation space.

在本揭露的一或多個實施方式中,真空度感測器的數量為複數。真空度感測器分別位於複數個抽氣子空間內。In one or more embodiments of the present disclosure, there are plural vacuum sensors, which are respectively located in plural vacuum sub-spaces.

在本揭露的一或多個實施方式中,吸附裝置進一步包含抽氣模組。抽氣模組連通至抽氣口。In one or more embodiments of the present disclosure, the adsorption device further includes an air extraction module. The air extraction module is connected to the air extraction port.

在本揭露的一或多個實施方式中,抽氣模組的數量為複數。複數個抽氣模組分別連接複數個抽氣口。每一抽氣模組配置以獨立調整抽氣速率。In one or more embodiments of the present disclosure, there are plural exhaust modules, which are respectively connected to plural exhaust ports, and each exhaust module is configured to independently adjust the exhaust rate.

在本揭露的一或多個實施方式中,載台進一步包含外圍壁。外圍壁連接頂面的邊緣,並與頂面環繞形成抽氣空間。抽氣子空間包含第一抽氣子空間以及第二抽氣子空間。第一抽氣子空間比第二抽氣子空間更靠近外圍壁。當吸附裝置執行吸附程序時,連接第二抽氣子空間的抽氣模組比連接第一抽氣子空間的抽氣模組先啟動。In one or more embodiments of the present disclosure, the carrier further includes an outer wall. The outer wall is connected to the edge of the top surface and surrounds the top surface to form an exhaust space. The exhaust subspace includes a first exhaust subspace and a second exhaust subspace. The first exhaust subspace is closer to the outer wall than the second exhaust subspace. When the adsorption device performs an adsorption process, the exhaust module connected to the second exhaust subspace is activated before the exhaust module connected to the first exhaust subspace.

在本揭露的一或多個實施方式中,載台進一步包含分割壁。分割壁連接至頂面,並將抽氣空間分割為抽氣子空間。分割壁包含直線型壁。In one or more embodiments of the present disclosure, the carrier further comprises a partition wall. The partition wall is connected to the top surface and divides the pumping space into the pumping sub-spaces. The partition wall comprises a linear wall.

在本揭露的一或多個實施方式中,載台進一步包含分割壁。分割壁連接至頂面,並將抽氣空間分割為抽氣子空間。分割壁包含環形壁。In one or more embodiments of the present disclosure, the carrier further includes a partition wall. The partition wall is connected to the top surface and divides the pumping space into the pumping sub-spaces. The partition wall includes an annular wall.

在本揭露的一或多個實施方式中,載台進一步包含外圍壁以及凸塊。外圍壁連接頂面的邊緣,並與頂面環繞形成抽氣空間。凸塊設置於抽氣空間中。凸塊相對於頂面的高度小於外圍壁相對於頂面的高度。In one or more embodiments of the present disclosure, the carrier further includes an outer wall and a protrusion. The outer wall is connected to the edge of the top surface and surrounds the top surface to form an exhaust space. The protrusion is arranged in the exhaust space. The height of the protrusion relative to the top surface is less than the height of the outer wall relative to the top surface.

在本揭露的一或多個實施方式中,載台進一步包含分割壁。分割壁連接至頂面,並將抽氣空間分割為抽氣子空間。凸塊連接至外圍壁以及分割壁中的至少一者。In one or more embodiments of the present disclosure, the carrier further includes a partition wall. The partition wall is connected to the top surface and divides the exhaust space into exhaust sub-spaces. The protrusion is connected to at least one of the peripheral wall and the partition wall.

為了更有效率的解決晶圓的吸附問題,依據本揭露的一實施方式,一種吸附機台包含吸附裝置以及伺服器。吸附裝置包含載台、複數個抽氣模組以及複數個真空度感測器。載台具有頂面,並配置以吸附晶圓。載台包含抽氣空間以及複數個抽氣口。抽氣空間形成於頂面上,並包含彼此分隔的複數個抽氣子空間。複數個抽氣口分別位抽氣子空間內。複數個抽氣模組分別連接抽氣口。複數個真空度感測器分別位於抽氣子空間內。伺服器連接抽氣模組以及真空度感測器。伺服器配置以接收真空度感測器傳送的真空度值資料,並基於真空度值資料獨立調整各抽氣模組的抽氣速率。In order to solve the adsorption problem of wafers more efficiently, according to an embodiment of the present disclosure, an adsorption machine includes an adsorption device and a server. The adsorption device includes a carrier, a plurality of vacuum modules and a plurality of vacuum sensors. The carrier has a top surface and is configured to adsorb wafers. The carrier includes an exhaust space and a plurality of exhaust ports. The exhaust space is formed on the top surface and includes a plurality of exhaust sub-spaces separated from each other. A plurality of exhaust ports are respectively located in the exhaust sub-spaces. A plurality of exhaust modules are respectively connected to the exhaust ports. A plurality of vacuum sensors are respectively located in the exhaust sub-spaces. The server is connected to the exhaust modules and the vacuum sensors. The server is configured to receive vacuum value data transmitted by the vacuum sensor, and independently adjust the exhaust rate of each exhaust module based on the vacuum value data.

綜上所述,由於吸附裝置具有分割壁分割抽氣空間,不會因為單一抽氣子空間的真空狀態被破壞就導致晶圓掉落。此外,由於抽氣裝置在各抽氣子空間都具有抽氣口以及真空度感測器,可以基於真空度值資料獨立調整抽氣速率以即時的最佳化各抽氣子空間的真空度。最後,由於抽氣機台具有伺服器,能更有效率的控制抽氣裝置調整個抽氣子空間的真空度。In summary, since the suction device has a partition wall to divide the exhaust space, the wafer will not fall due to the destruction of the vacuum state of a single exhaust sub-space. In addition, since the exhaust device has an exhaust port and a vacuum sensor in each exhaust sub-space, the exhaust rate can be independently adjusted based on the vacuum value data to optimize the vacuum level of each exhaust sub-space in real time. Finally, since the exhaust machine has a server, it can more efficiently control the exhaust device to adjust the vacuum level of each exhaust sub-space.

以上所述僅係用以闡述本發明所欲解決的問題、解決問題的技術手段、及其產生的功效等等,本發明之具體細節將在下文的實施方式及相關圖式中詳細介紹。The above description is only used to explain the problem to be solved by the present invention, the technical means for solving the problem, and the effects produced, etc. The specific details of the present invention will be introduced in detail in the following implementation method and related drawings.

以下將以圖式揭露本揭露之複數個實施方式,為明確說明起見,許多實務上的細節將在以下敘述中一併說明。然而,應瞭解到,這些實務上的細節不應用以限制本揭露。也就是說,於本揭露部分實施方式中,這些實務上的細節是非必要的。此外,為簡化圖式起見,一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。在所有圖式中相同的標號將用於表示相同或相似的元件。The following will disclose multiple embodiments of the present disclosure with drawings. For the purpose of clarity, many practical details will be described together in the following description. However, it should be understood that these practical details should not be used to limit the present disclosure. In other words, in some embodiments of the present disclosure, these practical details are not necessary. In addition, in order to simplify the drawings, some commonly used structures and components will be depicted in the drawings in a simple schematic manner. The same reference numerals will be used to represent the same or similar components in all drawings.

空間相對的詞彙(例如,「低於」、「下方」、「之下」、「上方」、「之上」等相關詞彙)於此用以簡單描述如圖所示之元件或特徵與另一元件或特徵的關係。在使用或操作時,除了圖中所繪示的轉向之外,這些空間相對的詞彙涵蓋裝置的不同轉向。再者,這些裝置可旋轉(旋轉90度或其他角度),且在此使用之空間相對的描述語可作對應的解讀。另外,術語「由…製成」可以表示「包含」或「由…組成」。Spatially relative terms (e.g., "below," "beneath," "below," "above," "on," and related terms) are used herein to simply describe the relationship of an element or feature as shown in the figure to another element or feature. These spatially relative terms encompass different orientations of the device in use or operation in addition to the orientation shown in the figure. Furthermore, these devices may be rotated (90 degrees or other angles), and the spatially relative descriptors used herein may be interpreted accordingly. In addition, the term "made of" may mean "comprising" or "consisting of."

請參考第1圖,第1圖為繪示根據本揭露之一實施方式之吸附裝置100的立體圖。吸附裝置100包含具有頂面1102的載台110。載台110包含凸點112、外圍壁114、分割壁116以及複數個抽氣口119。凸點112配置以乘載晶圓(圖未示)。外圍壁114連接頂面1102的邊緣。頂面1102以及外圍壁114環繞形成抽氣空間s1。分割壁116連接至頂面1102,並將抽氣空間s1分割為複數個抽氣子空間s2。複數個抽氣口119連通頂面1102,且分別位於抽氣子空間s2內。亦即,於本實施方式中,每一個抽氣子空間s2內設有一個抽氣口119。Please refer to Figure 1, which is a three-dimensional diagram of an adsorption device 100 according to one embodiment of the present disclosure. The adsorption device 100 includes a carrier 110 having a top surface 1102. The carrier 110 includes a bump 112, a peripheral wall 114, a partition wall 116, and a plurality of exhaust ports 119. The bump 112 is configured to carry a wafer (not shown). The peripheral wall 114 is connected to the edge of the top surface 1102. The top surface 1102 and the peripheral wall 114 surround to form an exhaust space s1. The partition wall 116 is connected to the top surface 1102 and divides the exhaust space s1 into a plurality of exhaust sub-spaces s2. A plurality of exhaust ports 119 are connected to the top surface 1102 and are respectively located in the exhaust sub-space s2. That is, in this embodiment, each air pumping subspace s2 is provided with an air pumping port 119.

請繼續參考第1圖。第1圖的分割壁116包含環形壁1162以及直線型壁1164。在本實施例中,分割壁116包含複數個直線型壁1164。且直線型壁1164的兩端連接外圍壁114。直線型壁1164以及環形壁1162將抽氣空間s1分割為多個抽氣子空間s2。當吸附裝置100乘載晶圓時,每一抽氣子空間s2相對於晶圓都可各自具有氣密性,致使吸附裝置100有更好的吸附效果。舉例來說,即使發生意外(例如:晶圓與載台110接觸的表面磨損、晶圓彎曲或是載台110被微粒汙染)導致部分的抽氣子空間s2不再是真空狀態,其餘的抽氣子空間s2能依然能維持真空狀態吸附住晶圓,大大的減少掉片的機率。Please continue to refer to Figure 1. The partition wall 116 of Figure 1 includes an annular wall 1162 and a linear wall 1164. In this embodiment, the partition wall 116 includes a plurality of linear walls 1164. And both ends of the linear wall 1164 are connected to the outer wall 114. The linear wall 1164 and the annular wall 1162 divide the exhaust space s1 into a plurality of exhaust sub-spaces s2. When the adsorption device 100 carries a wafer, each exhaust sub-space s2 can be airtight relative to the wafer, so that the adsorption device 100 has a better adsorption effect. For example, even if an accident occurs (e.g., the surface of the wafer contacting the carrier 110 is worn, the wafer is bent, or the carrier 110 is contaminated by particles) causing part of the evacuated subspace s2 to no longer be in a vacuum state, the remaining evacuated subspace s2 can still maintain a vacuum state to absorb the wafer, greatly reducing the probability of wafer drop.

如第1圖所示,直線型壁1164交會在載台110的中心點。在一些實施例中,直線型壁1164可為棋盤狀。As shown in FIG. 1 , the linear walls 1164 intersect at the center point of the carrier 110. In some embodiments, the linear walls 1164 may be in the shape of a chessboard.

請繼續參考第1圖。在本質施方式中,凸塊118 連接至頂面1102。凸塊118配置以減少抽氣子空間s2的體積。需要說明的是,以同樣抽氣速率從抽氣子空間s2中排出空氣時,抽氣子空間s2的體積越小,排出空氣越快,具有更強的吸附力。因此,在本實施方式中,凸塊118連接至分割壁116或者是外圍壁114,配置以減少抽氣子空間s2的體積,確保抽氣子空間s2能夠維持真空。Please continue to refer to Figure 1. In this embodiment, the bump 118 is connected to the top surface 1102. The bump 118 is configured to reduce the volume of the pumping subspace s2. It should be noted that when exhausting air from the pumping subspace s2 at the same pumping rate, the smaller the volume of the pumping subspace s2, the faster the air is exhausted, and the stronger the adsorption force. Therefore, in this embodiment, the bump 118 is connected to the partition wall 116 or the outer wall 114, and is configured to reduce the volume of the pumping subspace s2 to ensure that the pumping subspace s2 can maintain a vacuum.

請參考第2圖。第2圖為繪示第一圖中的吸附裝置100的另一立體圖。載台110還具有底面1104。頂面1102以及底面1104分別位於載台110的相反兩側。位於頂面1102的抽氣口119連通底面1104。Please refer to FIG. 2. FIG. 2 is another three-dimensional view of the adsorption device 100 in FIG. 1. The carrier 110 further has a bottom surface 1104. The top surface 1102 and the bottom surface 1104 are located at opposite sides of the carrier 110. The air outlet 119 located at the top surface 1102 is connected to the bottom surface 1104.

請參考第3圖。第3圖為繪示根據本揭露之另一實施方式之吸附裝置100的立體圖。在本實施方式中,吸附裝置100包含載台110。可以清楚的觀察到,本實施方式的分割壁116具有兩直線型壁1164。在一些實施例中,直線型壁1164可以具有不同數量,例如兩道、三道、四道或其他合適數量的直線型壁1164。Please refer to FIG. 3. FIG. 3 is a perspective view of an adsorption device 100 according to another embodiment of the present disclosure. In this embodiment, the adsorption device 100 includes a carrier 110. It can be clearly observed that the partition wall 116 of this embodiment has two linear walls 1164. In some embodiments, the linear walls 1164 can have different numbers, such as two, three, four or other suitable numbers of linear walls 1164.

在一些實施例中,環形壁1162可以具有相較於第3圖所示的環形壁1162更大的半徑。半徑越大、環形壁1162越靠近外圍壁114,環形壁1162與外圍壁114之間的抽氣子空間s2就越小。在同樣的抽氣速率下抽氣子空間s2越小吸附力就越強,能更好的固定住晶圓。在一些實施例中,環形壁1162可以具有相較於第3圖所示的環形壁1162更小的半徑。較小半徑的環形壁1162會在靠近頂面1102中心點形成較小的抽氣子空間s2,更能針對晶圓的中心點進行固定。在一些實施例中,環形壁1162的數量可以為複數。通過將抽氣空間s1分割得更小能提供更穩定的吸附能力。In some embodiments, the annular wall 1162 may have a larger radius than the annular wall 1162 shown in FIG. 3 . The larger the radius and the closer the annular wall 1162 is to the peripheral wall 114 , the smaller the pumping subspace s2 between the annular wall 1162 and the peripheral wall 114 . At the same pumping rate, the smaller the pumping subspace s2 is, the stronger the adsorption force is, and the wafer can be better fixed. In some embodiments, the annular wall 1162 may have a smaller radius than the annular wall 1162 shown in FIG. 3 . The annular wall 1162 with a smaller radius will form a smaller pumping subspace s2 near the center point of the top surface 1102, and can be better fixed to the center point of the wafer. In some embodiments, there may be plural annular walls 1162. By dividing the evacuation space s1 into smaller parts, a more stable adsorption capacity can be provided.

在一些實施方式中,載台110可以具有不同外型,配置以配合所欲吸附的物體的外型,例如:方形、圓形或是任何合適的形狀,本揭露不易欲針對載台110的外型進行限制。In some embodiments, the carrier 110 may have different shapes to match the shape of the object to be adsorbed, such as square, round, or any suitable shape. The present disclosure does not intend to limit the shape of the carrier 110.

在一些實施方式中,載台110可以是不同材質,例如金屬、塑膠或是任何合適的材質,本揭露不易欲針對載台110的材質進行限制。In some implementations, the carrier 110 may be made of different materials, such as metal, plastic, or any suitable material. The present disclosure is not intended to limit the material of the carrier 110.

請參考第4圖。第4圖為繪示第3圖中的吸附裝置100沿著線段4-4的剖面示意圖。在本實施方式中,可以清楚的觀察到頂面1102與外圍壁114環繞形成的抽氣空間s1以及將抽氣空間s1分割為複數個抽氣子空間s2的環形壁1162以及直線型壁1164。在每一個抽氣子空間s2中,都有至少一抽氣口119,抽氣口119配置以連接抽氣模組130(未繪示,請見第5圖),抽氣模組130配置以通過抽氣口119將空氣從抽氣子空間s2中排出。抽氣模組130能透過增加或是減少抽氣速率,調整對晶圓施加的吸附力。若是抽氣速率不足,吸附力過小會造成晶圓掉落,若抽氣速率過強施加了過多力,則會因為對晶圓施加不必要的力進而造成物理性的損壞。Please refer to FIG. 4. FIG. 4 is a schematic cross-sectional view of the adsorption device 100 in FIG. 3 along line segment 4-4. In the present embodiment, it can be clearly observed that the exhaust space s1 is formed by the top surface 1102 and the outer wall 114, and the annular wall 1162 and the straight wall 1164 that divide the exhaust space s1 into a plurality of exhaust sub-spaces s2. In each exhaust sub-space s2, there is at least one exhaust port 119, and the exhaust port 119 is configured to connect to the exhaust module 130 (not shown, see FIG. 5), and the exhaust module 130 is configured to exhaust air from the exhaust sub-space s2 through the exhaust port 119. The exhaust module 130 can adjust the adsorption force applied to the wafer by increasing or decreasing the exhaust rate. If the vacuum rate is insufficient, the suction force will be too small, causing the wafer to fall. If the vacuum rate is too high and too much force is applied, unnecessary force will be applied to the wafer, causing physical damage.

在一些實施例中,一個抽氣模組130連接複數個抽氣口119,配置以同時增加或是減少複數個抽氣口119的抽氣速率。In some embodiments, an exhaust module 130 is connected to a plurality of exhaust ports 119 and is configured to simultaneously increase or decrease the exhaust rates of the plurality of exhaust ports 119 .

請繼續參考第4圖。在本實施方式中,每一抽氣子空間s2內都設置了至少一真空度感測器120,配置以測量各抽氣子空間s2內的真空度。在一些實施方式中,部分的抽氣子空間s2內設置了真空度感測器120。如第4圖所示,在本實施方式中,真空度感測器120可以被鑲嵌在凸塊118中,只暴露一部分接觸抽氣子空間s2以感測抽氣子空間s2的真空度值資料。在另一實施方式中,真空度感測器120可以設置在任意合適的位置,例如設置於凸點112之間或是黏接至外圍壁114、分割壁116的其中一側面。Please continue to refer to Figure 4. In the present embodiment, at least one vacuum sensor 120 is disposed in each pumping sub-space s2, and is configured to measure the vacuum level in each pumping sub-space s2. In some embodiments, a vacuum sensor 120 is disposed in a portion of the pumping sub-space s2. As shown in Figure 4, in the present embodiment, the vacuum sensor 120 may be embedded in the bump 118, with only a portion exposed to contact the pumping sub-space s2 to sense the vacuum level value data of the pumping sub-space s2. In another embodiment, the vacuum sensor 120 may be disposed at any suitable position, such as between the bumps 112 or bonded to one side of the outer wall 114 or the partition wall 116.

在一些實施方式中,抽氣模組130分別連接至抽氣口119,配置以獨立調整各抽氣模組130的抽氣速率。在一些實施方式中,抽氣模組130分別連接至抽氣口119,配置以根據各抽氣子空間s2內的真空度感測器120感測到的真空度值資料,獨立調整各抽氣模組130的抽氣速率。In some embodiments, the exhaust modules 130 are connected to the exhaust ports 119, respectively, and are configured to independently adjust the exhaust rate of each exhaust module 130. In some embodiments, the exhaust modules 130 are connected to the exhaust ports 119, respectively, and are configured to independently adjust the exhaust rate of each exhaust module 130 according to the vacuum value data sensed by the vacuum sensor 120 in each exhaust subspace s2.

如第4圖所示,抽氣空間s1包含第一抽氣子空間s2a以及第二抽氣子空間s2b,其中第一抽氣子空間s2a更靠近外圍壁114。執行抽氣程序時,連接第二抽氣子空間s2b的抽氣模組(未繪示)比連接第一抽氣子空間s2a的抽氣模組(未繪示)先啟動,換言之,第二抽氣子空間s2b中的空氣會先於第一抽氣子空間s2a被排出。如此,能先吸附固定住晶圓的中心,再固定晶圓的邊緣,可以更精確吸附住晶圓而不會偏移。As shown in FIG. 4 , the exhaust space s1 includes a first exhaust subspace s2a and a second exhaust subspace s2b, wherein the first exhaust subspace s2a is closer to the outer wall 114. When performing the exhaust procedure, the exhaust module (not shown) connected to the second exhaust subspace s2b is activated before the exhaust module (not shown) connected to the first exhaust subspace s2a. In other words, the air in the second exhaust subspace s2b will be exhausted before the air in the first exhaust subspace s2a. In this way, the center of the wafer can be first adsorbed and fixed, and then the edge of the wafer can be fixed, so that the wafer can be more accurately adsorbed without deviation.

請同時參考第4圖以及第5圖。第5圖為繪示根據本揭露之一實施方式之吸附機台200的方塊圖。吸附機台200包含吸附裝置100以及伺服器210。吸附裝置100包含載台110、複數個抽氣模組130以及複數個真空度感測器120。載台110包含凸點112、外圍壁114、分割壁116以及複數個抽氣口119。真空度感測器120以及抽氣口119分別設置於抽氣子空間s2中。抽氣模組130連接抽氣口119。伺服器210連接抽氣模組130以及真空度感測器120,配置以接收各真空度感測器120傳送的真空度值資料,並基於真空度值資料獨立調整各抽氣模組130的抽氣速率。如此,藉由伺服器210即時性的獨立調整抽氣模組130的抽氣速率,吸附機台200具有穩固吸附晶圓且不會對晶圓施加不必要的力的功效。Please refer to FIG. 4 and FIG. 5 at the same time. FIG. 5 is a block diagram showing an adsorption machine 200 according to one embodiment of the present disclosure. The adsorption machine 200 includes an adsorption device 100 and a server 210. The adsorption device 100 includes a carrier 110, a plurality of vacuum modules 130, and a plurality of vacuum sensors 120. The carrier 110 includes a protrusion 112, an outer wall 114, a partition wall 116, and a plurality of vacuum ports 119. The vacuum sensor 120 and the vacuum port 119 are respectively disposed in the vacuum subspace s2. The vacuum module 130 is connected to the vacuum port 119. The server 210 is connected to the vacuum module 130 and the vacuum sensor 120, and is configured to receive the vacuum value data transmitted by each vacuum sensor 120, and independently adjust the vacuum rate of each vacuum module 130 based on the vacuum value data. In this way, by the server 210 independently adjusting the vacuum rate of the vacuum module 130 in real time, the adsorption machine 200 has the effect of stably adsorbing the wafer without applying unnecessary force to the wafer.

由以上對於本揭露之具體實施方式之詳述,可以明顯地看出,在本吸附裝置中,由於分割壁將抽氣空間分割,能減少因為部分的抽氣子空間的真空度不足而導致晶圓掉落的狀況發生。此外,由於各抽氣子空間內設置了真空度感測器以及抽氣口,能藉由真空度感測器傳送的真空度值資料即時的將各抽氣子空間內的真空度獨立調整到最適的數值。最後,抽氣機台所包含的伺服器能即時性的獨立調整抽氣速率,相較於先前技術,不但更有效率、更不容易因為真空度不足而掉落,也更不易因為吸力過強而損傷。From the above detailed description of the specific implementation method of the present disclosure, it can be clearly seen that in the present adsorption device, since the partition wall divides the exhaust space, the occurrence of wafers falling due to insufficient vacuum in some exhaust sub-spaces can be reduced. In addition, since a vacuum sensor and an exhaust port are provided in each exhaust sub-space, the vacuum in each exhaust sub-space can be independently adjusted to the most suitable value in real time by the vacuum value data transmitted by the vacuum sensor. Finally, the server included in the exhaust machine can independently adjust the exhaust rate in real time. Compared with the previous technology, it is not only more efficient and less likely to fall due to insufficient vacuum, but also less likely to be damaged due to excessive suction.

上述內容概述若干實施方式之特徵,使得熟習此項技術者可更好地理解本案之態樣。熟習此項技術者應瞭解,在不脫離本案的精神和範圍的情況下,可輕易使用上述內容作為設計或修改為其他變化的基礎,以便實施本文所介紹之實施方式的相同目的及/或實現相同優勢。上述內容應當被理解為本揭露的舉例,其保護範圍應以申請專利範圍為準。The above content summarizes the features of several implementation methods so that those familiar with this technology can better understand the state of this case. Those familiar with this technology should understand that without departing from the spirit and scope of this case, the above content can be easily used as a basis for designing or modifying other changes to implement the same purpose and/or achieve the same advantages of the implementation methods introduced in this article. The above content should be understood as an example of this disclosure, and its protection scope should be based on the scope of the patent application.

100:吸附裝置 110:載台 1102:頂面 1104:底面 112:凸點 114:外圍壁 116:分割壁 1162:環形壁 1164:直線型壁 118:凸塊 119:抽氣口 s1:抽氣空間 s2:抽氣子空間 s2a:第一抽氣子空間 s2b:第二抽氣子空間 120:真空度感測器 130:抽氣模組 200:吸附機台 210:伺服器 4-4:線段 100: adsorption device 110: carrier 1102: top surface 1104: bottom surface 112: bump 114: peripheral wall 116: partition wall 1162: annular wall 1164: linear wall 118: bump 119: vacuum port s1: vacuum space s2: vacuum subspace s2a: first vacuum subspace s2b: second vacuum subspace 120: vacuum sensor 130: vacuum module 200: adsorption machine 210: server 4-4: line segment

為讓本揭露之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之說明如下: 第1圖為繪示根據本揭露之一實施方式之吸附裝置的立體圖。 第2圖為繪示第一圖中的吸附裝置的另一立體圖。 第3圖為繪示根據本揭露之另一實施方式之吸附裝置的立體圖。 第4圖為繪示第3圖中的吸附裝置沿著線段4-4的剖面示意圖。 第5圖為繪示根據本揭露之一實施方式之吸附機台的方塊圖。 In order to make the above and other purposes, features, advantages and embodiments of the present disclosure more clearly understandable, the attached drawings are described as follows: FIG. 1 is a three-dimensional diagram of an adsorption device according to one embodiment of the present disclosure. FIG. 2 is another three-dimensional diagram of the adsorption device in the first figure. FIG. 3 is a three-dimensional diagram of an adsorption device according to another embodiment of the present disclosure. FIG. 4 is a schematic cross-sectional diagram of the adsorption device in FIG. 3 along line segment 4-4. FIG. 5 is a block diagram of an adsorption machine according to one embodiment of the present disclosure.

100:吸附裝置 110:載台 1102:頂面 112:凸點 114:外圍壁 116:分割壁 1162:環形壁 1164:直線型壁 118:凸塊 119:抽氣口 s1:抽氣空間 s2:抽氣子空間 100: adsorption device 110: carrier 1102: top surface 112: bump 114: outer wall 116: partition wall 1162: annular wall 1164: linear wall 118: bump 119: exhaust port s1: exhaust space s2: exhaust subspace

Claims (11)

一種吸附裝置,包含具有一頂面的一載台,該載台配置以吸附一晶圓,該載台包含: 一抽氣空間,形成於該頂面上,並包含彼此分隔的複數個抽氣子空間;以及 複數個抽氣口,連通該頂面,並分別位於該些抽氣子空間內。 A suction device includes a carrier having a top surface, the carrier being configured to suction a wafer, the carrier including: a vacuum space formed on the top surface and including a plurality of vacuum sub-spaces separated from each other; and a plurality of vacuum ports connected to the top surface and respectively located in the vacuum sub-spaces. 如請求項1所述之吸附裝置,進一步包含至少一真空度感測器,該至少一真空度感測器位於該抽氣空間內。The adsorption device as described in claim 1 further comprises at least one vacuum sensor, which is located in the vacuum space. 如請求項2所述之吸附裝置,其中該至少一真空度感測器的數量為複數,該些真空度感測器分別位於該些抽氣子空間內。An adsorption device as described in claim 2, wherein the number of the at least one vacuum sensor is plural, and the vacuum sensors are respectively located in the vacuum subspaces. 如請求項1所述之吸附裝置,進一步包含至少一抽氣模組,該至少一抽氣模組連通至該些抽氣口。The adsorption device as described in claim 1 further comprises at least one vacuum module, which is connected to the vacuum ports. 如請求項4所述之吸附裝置,其中該至少一抽氣模組的數量為複數,該些抽氣模組分別連通至該些抽氣口,且每一該些抽氣模組配置以獨立調整一抽氣速率。An adsorption device as described in claim 4, wherein the number of the at least one vacuum module is plural, the vacuum modules are respectively connected to the vacuum ports, and each of the vacuum modules is configured to independently adjust a vacuum rate. 如請求項5所述之吸附裝置,其中該載台進一步包含一外圍壁,該外圍壁連接該頂面的邊緣,並與該頂面環繞形成該抽氣空間,該抽氣空間包含一第一抽氣子空間以及一第二抽氣子空間,其中該第一抽氣子空間比該第二抽氣子空間更靠近該外圍壁,且當該吸附裝置執行一吸附程序時,該些抽氣模組中連接該第二抽氣子空間的一者比該些抽氣模組中連接該第一抽氣子空間的一者先啟動。An adsorption device as described in claim 5, wherein the carrier further includes an outer wall, the outer wall is connected to the edge of the top surface and surrounds the top surface to form the pumping space, the pumping space includes a first pumping sub-space and a second pumping sub-space, wherein the first pumping sub-space is closer to the outer wall than the second pumping sub-space, and when the adsorption device performs an adsorption process, one of the pumping modules connected to the second pumping sub-space is activated earlier than one of the pumping modules connected to the first pumping sub-space. 如請求項1所述之吸附裝置,其中該載台進一步包含一分割壁,該分割壁連接至該頂面,並將該抽氣空間分割為該些抽氣子空間,該分割壁包含一直線型壁。An adsorption device as described in claim 1, wherein the carrier further comprises a partition wall, which is connected to the top surface and divides the vacuum space into the vacuum sub-spaces, and the partition wall comprises a linear wall. 如請求項1所述之吸附裝置,其中該載台進一步包含一分割壁,該分割壁連接至該頂面,並將該抽氣空間分割為該些抽氣子空間,該分割壁包含一環形壁。An adsorption device as described in claim 1, wherein the carrier further comprises a partition wall, which is connected to the top surface and divides the pumping space into the pumping sub-spaces, and the partition wall comprises an annular wall. 如請求項1所述之吸附裝置,其中該載台進一步包含一外圍壁以及一凸塊,該外圍壁連接該頂面的邊緣,並與該頂面環繞形成該抽氣空間,該凸塊設置於該抽氣空間中,且該凸塊相對於該頂面的高度小於該外圍壁相對於該頂面的高度。An adsorption device as described in claim 1, wherein the carrier further includes an outer wall and a protrusion, the outer wall is connected to the edge of the top surface and surrounds the top surface to form the exhaust space, the protrusion is arranged in the exhaust space, and the height of the protrusion relative to the top surface is less than the height of the outer wall relative to the top surface. 如請求項9所述之吸附裝置,其中該載台進一步包含一分割壁,該分割壁連接至該頂面,並將該抽氣空間分割為該些抽氣子空間,該凸塊連接至該外圍壁以及該分割壁中的至少一者。An adsorption device as described in claim 9, wherein the carrier further includes a partition wall, which is connected to the top surface and divides the exhaust space into the exhaust sub-spaces, and the protrusion is connected to the outer wall and at least one of the partition walls. 一種吸附機台,包含: 一吸附裝置,包含: 一載台,具有一頂面,並配置以吸附一晶圓,該載台包含: 一抽氣空間,形成於該頂面上,並包含彼此分隔的複數個抽氣子空間;以及 複數個抽氣口,該些抽氣口分別位於該些抽氣子空間內; 複數個抽氣模組,該些抽氣模組分別連接該些抽氣口;以及 複數個真空度感測器,該些真空度感測器分別位於該些抽氣子空間內;以及 一伺服器,連接該些抽氣模組以及該些真空度感測器,配置以接收該些真空度感測器傳送的一真空度值資料,並基於該真空度值資料獨立調整各該些抽氣模組的抽氣速率。 A suction machine comprises: A suction device comprising: A carrier having a top surface and configured to suction a wafer, the carrier comprising: A vacuum space formed on the top surface and comprising a plurality of vacuum sub-spaces separated from each other; and A plurality of vacuum ports, the vacuum ports being respectively located in the vacuum sub-spaces; A plurality of vacuum modules, the vacuum modules being respectively connected to the vacuum ports; and A plurality of vacuum sensors, the vacuum sensors being respectively located in the vacuum sub-spaces; and A server, connected to the vacuum modules and the vacuum sensors, configured to receive vacuum value data transmitted by the vacuum sensors, and independently adjusting the vacuum rate of each of the vacuum modules based on the vacuum value data.
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