TWI741729B - Substrate processing system, valve plate assembly and working method of substrate processing system - Google Patents
Substrate processing system, valve plate assembly and working method of substrate processing system Download PDFInfo
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Abstract
一種基片處理系統、閥板組件以及基片處理系統的工作方法,其中,基片處理系統包括:第一腔,第一腔具有第一基片傳輸口;第二腔,第二腔具有第二基片傳輸口,第二腔與第一腔沿水平方向排布;位於第一腔與第二腔之間的密封殼,密封殼與第一基片傳輸口和第二基片傳輸口連通;位於密封殼內的第一閥板;位於密封殼內的第二閥板,第二閥板與第一閥板上下疊放;第一驅動裝置,用於使第一閥板運動以密封第一基片傳輸口;第二驅動裝置,用於使第二閥板運動以密封第二基片傳輸口。本發明所述之基片處理系統對基片具有較高的處理效率。A substrate processing system, a valve plate assembly, and a working method of the substrate processing system, wherein the substrate processing system includes: a first cavity, the first cavity has a first substrate transfer port; the second cavity, the second cavity has a first Two substrate transfer ports, the second cavity and the first cavity are arranged in a horizontal direction; a sealed shell located between the first cavity and the second cavity, the sealed shell communicates with the first substrate transfer port and the second substrate transfer port ; The first valve plate located in the sealing shell; the second valve plate located in the sealing shell, the second valve plate and the first valve plate are stacked up and down; the first driving device is used to move the first valve plate to seal the first valve plate A substrate transfer port; a second driving device for moving the second valve plate to seal the second substrate transfer port. The substrate processing system of the present invention has higher processing efficiency for substrates.
Description
本發明涉及半導體領域,尤其涉及一種基片處理系統、閥板組件及基片處理系統的工作方法。The invention relates to the field of semiconductors, and in particular to a working method of a substrate processing system, a valve plate assembly and a substrate processing system.
現有的基片處理系統通常為真空群集設備(Cluster),真空集群設備包括設備前端模組、負載鎖定腔(Load Lock)、傳輸腔以及包圍傳輸腔的製程腔。其中,傳輸腔內安裝有機械臂(Robot),機械臂用於將待處理基片從負載鎖定腔內取出,並放置到任意一個製程腔中,在製程腔內,對待處理基片進行處理,待處理基片處理完成後,機械臂再將處理完的基片從製程腔內取出,並將處理完的基片移動到外界大氣環境中。The existing substrate processing system is usually a vacuum cluster equipment (Cluster), which includes a front-end module of the equipment, a load lock chamber (Load Lock), a transfer chamber, and a process chamber surrounding the transfer chamber. Among them, a robotic arm (Robot) is installed in the transfer cavity. The robotic arm is used to take the substrate to be processed from the load lock chamber and place it in any process chamber. In the process chamber, the substrate to be processed is processed. After the processing of the substrate to be processed is completed, the robotic arm then takes the processed substrate out of the processing chamber and moves the processed substrate to the outside atmosphere.
現有的基片處理系統中,傳輸腔與製程腔、以及傳輸腔與負載鎖定腔之間均設置有一個閥板。當閥板需要更換時,拆除閥板將破壞傳輸腔、製程腔和負載鎖定腔的真空環境,使得基片處理系統難以繼續對待處理基片進行處理,因此,現有的基片處理系統的停機頻率較高,對待處理基片的處理效率較低。In the existing substrate processing system, a valve plate is provided between the transfer chamber and the process chamber, and between the transfer chamber and the load lock chamber. When the valve plate needs to be replaced, removing the valve plate will destroy the vacuum environment of the transfer chamber, the process chamber and the load lock chamber, making it difficult for the substrate processing system to continue processing the substrate to be processed. Therefore, the frequency of shutdown of the existing substrate processing system Higher, the processing efficiency of the substrate to be processed is lower.
本發明解決技術問題的技術方案是提供一種基片處理系統、閥板組件及基片處理系統的工作方法,以提高基片處理系統對待處理基片的處理效率。The technical scheme of the present invention to solve the technical problem is to provide a working method of a substrate processing system, a valve plate assembly and a substrate processing system, so as to improve the processing efficiency of the substrate to be processed by the substrate processing system.
為了解決上述技術問題,本發明提供一種基片處理系統,包括:第一腔,第一腔具有第一基片傳輸口;第二腔,第二腔具有第二基片傳輸口,第二腔與第一腔沿水平方向排布;位於第一腔與第二腔之間的密封殼,密封殼與第一基片傳輸口和第二基片傳輸口連通;位於密封殼內的第一閥板;位於密封殼內的第二閥板,第二閥板與第一閥板上下疊放;第一驅動裝置,用於使第一閥板運動以密封第一基片傳輸口;第二驅動裝置,用於使第二閥板運動以密封第二基片傳輸口。In order to solve the above technical problems, the present invention provides a substrate processing system, including: a first cavity, the first cavity has a first substrate transfer port; a second cavity, the second cavity has a second substrate transfer port, and a second cavity It is arranged in the horizontal direction with the first cavity; the sealed shell located between the first cavity and the second cavity, the sealed shell communicates with the first substrate transfer port and the second substrate transfer port; the first valve located in the sealed shell Plate; the second valve plate located in the sealing shell, the second valve plate and the first valve plate are stacked up and down; the first drive device is used to move the first valve plate to seal the first substrate transfer port; the second drive The device is used to move the second valve plate to seal the second substrate transfer port.
較佳地,第一驅動裝置和第二驅動裝置均包括上下動力裝置和水平動力裝置,上下動力裝置用於使第一閥板或者第二閥板沿上下方向運動,水平動力裝置用於使第一閥板或者第二閥板沿水平方向運動。Preferably, both the first driving device and the second driving device include an up-and-down power device and a horizontal power device. A valve plate or a second valve plate moves in the horizontal direction.
較佳地,密封殼包括第一開口和第二開口,第一開口與第一基片傳輸口對應,第二開口與第二基片傳輸口對應。Preferably, the sealing shell includes a first opening and a second opening, the first opening corresponds to the first substrate transfer port, and the second opening corresponds to the second substrate transfer port.
較佳地,當第一開口的開口面積大於第一基片傳輸口的開口面積時,第一閥板用於密封第一基片傳輸口或者第一開口。Preferably, when the opening area of the first opening is larger than the opening area of the first substrate transfer port, the first valve plate is used to seal the first substrate transfer port or the first opening.
較佳地,當第一開口的開口面積小於等於第一基片傳輸口的開口面積時,第一閥板用於密封第一開口。Preferably, when the opening area of the first opening is less than or equal to the opening area of the first substrate transfer port, the first valve plate is used to seal the first opening.
較佳地,第一閥板的側面設置密封裝置,用於實現與第一基片傳輸口或第一開口的緊密貼合。Preferably, a sealing device is provided on the side of the first valve plate to achieve close contact with the first substrate transfer port or the first opening.
較佳地,第一基片傳輸口的周圍或者第一開口的周圍具有第一臺階,第一閥板設有與第一臺階匹配的密封臺階,第一閥板進一步包括設於密封臺階上的密封裝置,密封裝置用於實現密封臺階和第一臺階之間的密封。Preferably, there is a first step around the first substrate transfer port or around the first opening, the first valve plate is provided with a sealing step matching the first step, and the first valve plate further includes a sealing step provided on the sealing step. The sealing device is used to realize the seal between the sealing step and the first step.
較佳地,當第二開口的開口面積大於第二基片傳輸口的開口面積時,第二閥板用於密封第二基片傳輸口或者第二開口。Preferably, when the opening area of the second opening is larger than the opening area of the second substrate transfer port, the second valve plate is used to seal the second substrate transfer port or the second opening.
較佳地,當第二開口的開口面積小於等於第二基片傳輸口的開口面積時,第二閥板用於密封第二開口。Preferably, when the opening area of the second opening is less than or equal to the opening area of the second substrate transfer port, the second valve plate is used to seal the second opening.
較佳地,第二閥板的側面設置密封裝置,用於實現與第二基片傳輸口或第二開口的緊密貼合。Preferably, a sealing device is provided on the side of the second valve plate to achieve close contact with the second substrate transfer port or the second opening.
較佳地,第二基片傳輸口的周圍或者第二開口的周圍具有第二臺階,第二閥板設有與第二臺階匹配的密封臺階,第二閥板進一步包括設於密封臺階上的密封裝置,密封裝置用於實現密封臺階和第二臺階之間的密封。Preferably, the periphery of the second substrate transfer port or the periphery of the second opening is provided with a second step, the second valve plate is provided with a sealing step matching the second step, and the second valve plate further includes a sealing step provided on the sealing step. The sealing device is used to realize the seal between the sealing step and the second step.
較佳地,第一腔為製程腔,第二腔為傳輸腔。Preferably, the first cavity is a process cavity and the second cavity is a transfer cavity.
較佳地,當製程腔的個數大於1個時,大於1個的製程腔環繞傳輸腔;各個製程腔與傳輸腔之間均具有第一閥板、第二閥板和密封殼。Preferably, when the number of process chambers is greater than one, the process chambers greater than one surround the transfer chamber; each process chamber and the transfer chamber are provided with a first valve plate, a second valve plate and a sealing shell.
較佳地,第一腔為負載鎖定腔,第二腔為傳輸腔。Preferably, the first cavity is a load lock cavity and the second cavity is a transmission cavity.
較佳地,第一閥板與第二閥板的大小相等或者不相等。Preferably, the size of the first valve plate and the second valve plate are equal or not equal.
本發明提供一種用於基片處理系統的閥板組件,包括:第一閥板;與第一閥板上下疊放的第二閥板;位於第一閥板和第二閥板外圍的密封殼,密封殼沿水平方向具有第一開口和第二開口;第一驅動裝置,用於使第一閥板沿上下方向和水平方向運動;第二驅動裝置,用於使第二閥板沿上下方向和水平方向運動。The invention provides a valve plate assembly for a substrate processing system, comprising: a first valve plate; a second valve plate stacked up and down with the first valve plate; and a sealing shell located on the periphery of the first valve plate and the second valve plate , The sealing shell has a first opening and a second opening along the horizontal direction; the first driving device is used to move the first valve plate in the up and down direction and the horizontal direction; the second driving device is used to move the second valve plate in the up and down direction And horizontal movement.
較佳地,第一閥板和第二閥板均包括密封裝置。Preferably, both the first valve plate and the second valve plate include a sealing device.
較佳地,密封裝置設置於第一閥板及/或第二閥板的側壁。Preferably, the sealing device is arranged on the side wall of the first valve plate and/or the second valve plate.
較佳地,第一開口的周圍設置有第一臺階,第一閥板設有與第一臺階匹配的密封臺階,第一閥板的密封裝置位於密封臺階上;第二開口的周圍設置有第二臺階,第二閥板設置有與第二臺階匹配的密封臺階,第二閥板的密封裝置位於密封臺階上。Preferably, a first step is provided around the first opening, the first valve plate is provided with a sealing step matching the first step, and the sealing device of the first valve plate is located on the sealing step; the second opening is provided with a first step around the second opening. Two steps, the second valve plate is provided with a sealing step matching the second step, and the sealing device of the second valve plate is located on the sealing step.
較佳地,第一驅動裝置和第二驅動裝置均包括上下動力裝置和水平動力裝置,上下動力裝置用於使第一閥板或者第二閥板上下運動,水平動力裝置用於使第一閥板或者第二閥板沿水平方向運動。Preferably, the first driving device and the second driving device both include an upper and lower power device and a horizontal power device. The upper and lower power devices are used to move the first valve plate or the second valve plate up and down, and the horizontal power device is used to make the first valve The plate or the second valve plate moves in the horizontal direction.
相應的,本發明進一步提供一種基片處理系統的工作方法,包括:提供上述基片處理系統;利用第一驅動裝置使第一閥板運動密封第一基片傳輸口,及/或利用第二驅動裝置使第二閥板運動密封第二基片傳輸口。Correspondingly, the present invention further provides a working method of a substrate processing system, including: providing the above-mentioned substrate processing system; using a first driving device to move the first valve plate to seal the first substrate transfer port, and/or using the second The driving device moves the second valve plate to seal the second substrate transfer port.
較佳地,當第一閥板密封第一基片傳輸口時,更換第二閥板;或者,當第二閥板密封第二基片傳輸口時,更換第一閥板。Preferably, when the first valve plate seals the first substrate transfer port, the second valve plate is replaced; or, when the second valve plate seals the second substrate transfer port, the first valve plate is replaced.
與先前技術相比,本發明實施例的技術方案具有以下有益效果:Compared with the prior art, the technical solution of the embodiment of the present invention has the following beneficial effects:
本發明技術方案提供的基片處理系統中,第一閥板用於密封第一基片傳輸口,有利於確保第一腔內維持真空環境;第二閥板用於密封第二基片傳輸口,有利於確保第二腔內維持真空環境。當第一閥板需要維護時,使第二閥板密封第二基片傳輸口,則第二腔內仍能維持真空環境,當第二閥板需要維護時,使第一閥板密封第一基片傳輸口,則第一腔內仍能維持真空環境。當第一腔或者第二腔內仍能維持真空環境,使得第一腔或者第二腔內仍能繼續進行製程處理而無需停機,因此,有利於降低停機頻率,提高待處理基片的處理效率。In the substrate processing system provided by the technical scheme of the present invention, the first valve plate is used to seal the first substrate transfer port, which is beneficial to ensure that a vacuum environment is maintained in the first cavity; the second valve plate is used to seal the second substrate transfer port , Which helps to ensure that the vacuum environment is maintained in the second cavity. When the first valve plate needs maintenance, make the second valve plate seal the second substrate transfer port, and the vacuum environment can still be maintained in the second cavity. When the second valve plate needs maintenance, the first valve plate is sealed to the first valve plate. The substrate transfer port can still maintain a vacuum environment in the first cavity. When the vacuum environment can still be maintained in the first cavity or the second cavity, the process processing can be continued in the first cavity or the second cavity without shutting down. Therefore, it is beneficial to reduce the frequency of shutdown and improve the processing efficiency of the substrate to be processed .
正如先前技術所述,先前技術中的基片處理系統對待處理基片的處理效率較低,為了解決上述技術問題,本發明的技術方案提供一種基片處理系統、用於基片處理系統的閥板組件及基片處理系統的工作方法,其中,基片處理系統包括:第一腔,第一腔具有第一基片傳輸口;第二腔,第二腔具有第二基片傳輸口,第二腔與第一腔沿水平方向排布;位於第一腔與第二腔之間的密封殼,密封殼與第一基片傳輸口和第二基片傳輸口連通;位於密封殼內的第一閥板;位於密封殼內的第二閥板,第二閥板位於第一閥板上方;第一驅動裝置,用於使第一閥板運動以密封第一基片傳輸口;第二驅動裝置,用於使第二閥板運動以密封第二基片傳輸口。本發明提供之基片處理系統對待處理基片的處理效率較高。As described in the prior art, the substrate processing system in the prior art has low processing efficiency for the substrate to be processed. In order to solve the above technical problems, the technical solution of the present invention provides a substrate processing system and a valve for the substrate processing system. The working method of the board assembly and the substrate processing system, wherein the substrate processing system includes: a first cavity, the first cavity has a first substrate transfer port; the second cavity, the second cavity has a second substrate transfer port, and the The two cavities and the first cavity are arranged in the horizontal direction; the sealed shell located between the first cavity and the second cavity, the sealed shell communicates with the first substrate transfer port and the second substrate transfer port; the second substrate located in the sealed shell A valve plate; a second valve plate located in the sealing shell, the second valve plate is located above the first valve plate; a first drive device for moving the first valve plate to seal the first substrate transfer port; a second drive The device is used to move the second valve plate to seal the second substrate transfer port. The substrate processing system provided by the present invention has higher processing efficiency for the substrate to be processed.
為使本發明的上述目的、特徵和有益效果能夠更為明顯易懂,下面將結合附圖對本發明的具體實施例做詳細的說明。In order to make the above objectives, features and beneficial effects of the present invention more obvious and understandable, specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.
圖1是根據本發明的一種基片處理系統的俯視圖。Fig. 1 is a top view of a substrate processing system according to the present invention.
請參考圖1,基片處理系統包括:製程腔100、傳輸腔101和負載鎖定腔102,製程腔100和負載鎖定腔102包圍傳輸腔101。Please refer to FIG. 1, the substrate processing system includes: a
製程腔100(Process Module,PM)內為真空環境,用於對待處理基片進行半導體製程的處理。The inside of the process chamber 100 (Process Module, PM) is a vacuum environment, which is used to process the semiconductor process on the substrate to be processed.
傳輸腔101(Transfer Module,TM)內為真空環境,且傳輸腔101內具有機械手臂,用於將傳輸腔101內的待處理基片移動至其中一個製程腔100內。The transfer chamber 101 (Transfer Module, TM) is in a vacuum environment, and there is a robot arm in the
負載鎖定腔102(Load lock)用於實現大氣環境與真空環境之間的切換。The load lock chamber 102 (Load lock) is used to switch between an atmospheric environment and a vacuum environment.
圖2是根據本發明的一種基片處理系統的剖面結構示意圖。2 is a schematic cross-sectional structure diagram of a substrate processing system according to the present invention.
請參考圖2,第一腔200具有第一基片傳輸口201;第二腔202具有第二基片傳輸口203,第二腔202與第一腔200沿水平方向X1排布;密封殼204位於第一腔200與第二腔202之間,密封殼204與第一基片傳輸口201和第二基片傳輸口203連通;位於密封殼204內的第一閥板205;位於密封殼204內的第二閥板206,第二閥板206與第一閥板205上下疊放;第一驅動裝置207,用於使第一閥板205運動以密封第一基片傳輸口201;第二驅動裝置208,用於使第二閥板206運動以密封第二基片傳輸口203。Please refer to FIG. 2, the
在一種實施例中,第一腔200為製程腔,製程腔內為真空環境,在第一腔200內對待處理基片進行半導體製程的處理,半導體製程包括:電漿蝕刻製程,第一腔200的第一基片傳輸口201用於移入或者移出待處理基片。第二腔202為傳輸腔,第二腔202內具有機械手臂(圖中未示出),機械手臂用於抓取待處理基片並通過第二基片傳輸口203移入或者移出待處理基片。In one embodiment, the
在另一種實施例中,第一腔200為傳輸腔,第二腔202為負載鎖定腔(Load lock)。In another embodiment, the
第二腔202與第一腔200沿水平方向X1排布,第二腔202與第一腔200之間具有密封殼204,密封殼204分別與第二腔202和第一腔200連接。The
在本實施例中,密封殼204包括第一開口209和第二開口210,第一開口209與第一基片傳輸口201對應,第二開口210與第二基片傳輸口203對應。In this embodiment, the sealing
在本實施例中,第一驅動裝置207和第二驅動裝置208均包括上下動力裝置(圖中未示出)和水平動力裝置(圖中未示出),上下動力裝置用於使第一閥板205或者第二閥板206沿上下方向Y1運動,使第一閥板205可與第一基片傳輸口201相對,第二閥板206與第二基片傳輸口203相對,且第一閥板205在密封殼204上的投影能夠覆蓋第一基片傳輸口201,第二閥板206在密封殼204上的投影能夠覆蓋第二基片傳輸口203,水平動力裝置用於使第一閥板205壓向第一開口209以密封第一基片傳輸口201,或者使第二閥板206壓向第二開口210以密封第二基片傳輸口203。In this embodiment, the
在本實施例中,當第一閥板205需要維護或者更換時,都需要拆卸第一閥板205。當拆除第一閥板205時,第二閥板206密封第二開口210,有利於確保第二腔202內的真空環境;同樣的,當第二閥板206需要維護或者更換時,第一閥板205密封第一開口209,使第一腔200內的真空環境不被破壞,使得第一腔200或者第二腔202的處理過程不被中斷,因此,有利於提高待處理基片的處理效率。In this embodiment, when the
在本實施例中,拆卸第一閥板205的方法包括:同時拆卸第一閥板205和第一驅動裝置207;拆卸第二閥板206的方法包括:同時拆卸第二閥板206和第二驅動裝置208。In this embodiment, the method of disassembling the
在本實施例中,基片處理系統進一步包括:位於第一腔200和第二腔202底部的支撐腳(圖中未示出)、位於支撐腳下方的設備板以及位於設備板下方的支撐柱。In this embodiment, the substrate processing system further includes: supporting feet (not shown in the figure) at the bottoms of the
在本實施例中,由於第一閥板205與第二閥板206上下疊放,使得第一閥板205和第二閥板206所占的面積與僅與第一閥板205所占的面積相同或者接近,則基片處理系統的重心不發生偏移或者發生輕微的偏移,使得原有的支撐腳和支撐柱無需額外重新設計,有利於減少設計難度。In this embodiment, since the
在本實施例中,當第一腔200為製程腔,第二腔202為傳輸腔時,若製程腔的個數大於1個,則複數個製程腔環繞傳輸腔,且各製程腔與傳輸腔之間均具有第一閥板205、第二閥板206和密封殼204。In this embodiment, when the
在本實施例中,第一閥板205和第二閥板206的大小相等。In this embodiment, the size of the
在其他實施例中,第一閥板和第二閥板的大小不相等。In other embodiments, the sizes of the first valve plate and the second valve plate are not equal.
圖3是圖2的基片處理系統中第一閥板密封第一基片傳輸口的結構示意圖。3 is a schematic diagram of the structure of the first valve plate sealing the first substrate transfer port in the substrate processing system of FIG. 2.
在本實施例中,第一開口209的開口面積與第一基片傳輸口201的開口面積相等,則第一驅動裝置207用於使第一閥板205密封第一開口209。在其他實施例中,第一開口的開口面積小於第一基片傳輸口的開口面積,第一驅動裝置使第一閥板密封第一開口;或者,第一開口的開口面積大於第一基片傳輸口的開口面積,第一驅動裝置使第一閥板密封第一基片傳輸口或者第一開口。In this embodiment, the opening area of the
在本實施例中,第一閥板205的側面設置有密封裝置205a,當第一閥板205密封第一開口209時,密封裝置205a用於實現與第一開口209的緊密貼合。In this embodiment, the side of the
在本實施例中,當第二閥板206需要維護或者更換時,第一閥板205密封第一開口209,有利於確保第一腔200內的真空環境,使第一腔200內的處理不被中斷,因此,有利於提高基片處理系統的處理效率。In this embodiment, when the
圖4是圖2的基片處理系統中第二閥板密封第二基片傳輸口的結構示意圖。4 is a schematic diagram of the structure of the second valve plate sealing the second substrate transfer port in the substrate processing system of FIG. 2.
在本實施例中,第二開口210的開口面積與第二基片傳輸口203的開口面積相等,則第二驅動裝置208用於使第二閥板206密封第二開口210。In this embodiment, the opening area of the
在其他實施例中,第二開口的開口面積小於第二基片傳輸口的開口面積,第二驅動裝置使第二閥板密封第二開口;或者,第二開口的開口面積大於第二基片傳輸口的開口面積,第一驅動裝置使第二閥板密封第二基片傳輸口或者第二開口。In other embodiments, the opening area of the second opening is smaller than the opening area of the second substrate transfer port, and the second driving device causes the second valve plate to seal the second opening; or, the opening area of the second opening is larger than that of the second substrate For the opening area of the transfer port, the first driving device makes the second valve plate seal the second substrate transfer port or the second opening.
在本實施例中,第二閥板206的側面設置有密封裝置206a,當第二閥板206密封第二開口210時,密封裝置206a用於實現與第二開口210的緊密貼合。In this embodiment, the side of the
在本實施例中,當第一閥板205需要維護或者更換時,第二閥板206密封第二開口210,有利於確保第二腔202內的真空環境,使第二腔202內的處理不被中斷,因此,有利於提高基片處理系統的處理效率。In this embodiment, when the
圖5是根據本發明的另一種基片處理系統的剖面結構示意圖。5 is a schematic cross-sectional structure diagram of another substrate processing system according to the present invention.
請參考圖5,第一腔300具有第一基片傳輸口301;第二腔302具有第二基片傳輸口303,第二腔302與第一腔300沿水平方向X2排布;密封殼304位於第一腔300與第二腔302之間,密封殼304與第一基片傳輸口301和第二基片傳輸口303連通;位於密封殼304內的第一閥板305;位於密封殼304的第二閥板306,第二閥板306與第一閥板305上下疊放;第一驅動裝置307,用於使第一閥板305運動以密封第一基片傳輸口301;第二驅動裝置308,用於使第二閥板306運動以密封第二基片傳輸口303。5, the
在本實施例中,密封殼304包括第一開口309和第二開口310,第一開口309與第一基片傳輸口301對應,第二開口310與第二基片傳輸口303對應。In this embodiment, the sealing
在本實施例中,第一開口309的開口面積與第一基片傳輸口301的開口面積相等,且第一開口309的周圍具有第一臺階311,第一閥板305具有與第一臺階311相匹配的密封臺階305a和位於密封臺階305a上的密封裝置305b;第二開口310的開口面積與第二基片傳輸口303的開口面積相等,且第二開口310的周圍具有第二臺階312,第二閥板306具有與第二臺階312相匹配的密封臺階306a和位於密封臺階306a上的密封裝置306b。In this embodiment, the opening area of the
在其他實施例中,第一開口的開口面積小於第一基片傳輸口的開口面積,第一開口的周圍具有第一臺階,第一閥板用於密封第一開口;第二開口的開口面積小於第二基片傳輸口的開口面積,且第二開口的周圍具有第二臺階,第二閥板用於密封第二開口;或者,第一開口的開口面積大於第一基片傳輸口的開口面積,第一基片傳輸口的周圍具有第一臺階,第一閥板用於密封第一開口或者第二基片傳輸口;第二開口的開口面積大於第二基片傳輸口的開口面積,且第二基片傳輸口的周圍具有第二臺階,第二閥板用於密封第二開口或者第二基片傳輸口。In other embodiments, the opening area of the first opening is smaller than the opening area of the first substrate transfer port, the first opening is surrounded by a first step, the first valve plate is used to seal the first opening; the opening area of the second opening It is smaller than the opening area of the second substrate transfer port, and there is a second step around the second opening, and the second valve plate is used to seal the second opening; or, the opening area of the first opening is larger than the opening of the first substrate transfer port Area, there is a first step around the first substrate transfer port, the first valve plate is used to seal the first opening or the second substrate transfer port; the opening area of the second opening is larger than the opening area of the second substrate transfer port, And there is a second step around the second substrate transfer port, and the second valve plate is used to seal the second opening or the second substrate transfer port.
圖6是圖5的基片處理系統中第一閥板密封第一基片傳輸口的結構示意圖。6 is a schematic diagram of the structure of the first valve plate sealing the first substrate transfer port in the substrate processing system of FIG. 5.
在本實施例中,第一開口309周圍具有第一臺階311,第一閥板305設有與第一臺階311相匹配的密封臺階305a和位於密封臺階305a上的密封裝置305b,第一驅動裝置307使密封臺階305a與第一臺階311相匹配,密封裝置305b用於實現密封臺階305a與第一臺階311之間的密封。In this embodiment, there is a
在本實施例中,第一閥板305包括設置於密封臺階305a上的密封裝置305b,利用驅動裝置使第一閥板305密封第一臺階311時,所施加的驅動力不會因第一閥板305的板材而減少,而是全部傳遞至第一閥板305頂部的密封裝置305b,因此,只需較小的驅動力就能達到較好的密封效果。並且,利用第一閥板305密封第一臺階311,對第一閥板305材質的剛性要求較低。In this embodiment, the
在其他實施例中,第一開口的開口面積小於第一基片傳輸口的開口面積,第一驅動裝置使第一閥板密封第一開口;或者,第一開口的開口面積大於第一基片傳輸口的開口面積,第一驅動裝置使第一閥板密封第一基片傳輸口或者第一開口。In other embodiments, the opening area of the first opening is smaller than the opening area of the first substrate transfer port, and the first driving device causes the first valve plate to seal the first opening; or, the opening area of the first opening is larger than that of the first substrate For the opening area of the transfer port, the first driving device makes the first valve plate seal the first substrate transfer port or the first opening.
在本實施例中,當第二閥板306需要維護或者更換時,第一閥板305密封第一開口309,有利於確保第一腔300內的真空環境,使第一腔300內的處理不被中斷,因此,有利於提高基片處理系統的處理效率。In this embodiment, when the
圖7是圖5的基片處理系統中第二閥板密封第二基片傳輸口的結構示意圖。FIG. 7 is a schematic diagram of the structure of the second valve plate sealing the second substrate transfer port in the substrate processing system of FIG. 5.
在本實施例中,第二開口310的周圍具有第二臺階312,第二閥板306設有與第二臺階312相匹配的密封臺階306a和位於密封臺階306a上的密封裝置306b,第二驅動裝置308使密封臺階306a與第二臺階312相匹配,密封裝置306b用於實現密封臺階306a與第二臺階312之間的密封。In this embodiment, there is a
在本實施例中,第二閥板306包括設置於密封臺階306a上的密封裝置306b,利用驅動裝置使第二閥板306密封第二臺階312時,所施加的驅動力不會因第二閥板306的板材而減少,而是全部傳遞至第二閥板306頂部的密封裝置306b,因此,只需較小的驅動力就能達到較好的密封效果。並且,利用第二閥板306密封第二臺階312,對第二閥板306材質的剛性要求較低。In this embodiment, the
在其他實施例中,第二開口的開口面積小於第二基片傳輸口的開口面積,第二驅動裝置使第二閥板密封第二開口;或者,第二開口的開口面積大於第二基片傳輸口的開口面積,第二驅動裝置使第二閥板密封第二基片傳輸口或者第二開口。In other embodiments, the opening area of the second opening is smaller than the opening area of the second substrate transfer port, and the second driving device causes the second valve plate to seal the second opening; or, the opening area of the second opening is larger than that of the second substrate For the opening area of the transfer port, the second driving device makes the second valve plate seal the second substrate transfer port or the second opening.
在本實施例中,當第一閥板305需要維護或者更換時,第二閥板306密封第二開口310,有利於確保第二腔302內的真空環境,使第二腔302內的處理不被中斷,因此,有利於提高基片處理系統的處理效率。In this embodiment, when the
圖8是根據本發明的一種用於基片處理系統的閥板組件的結構示意圖;圖9是圖8的閥板組件中第一閥板的側視圖。Fig. 8 is a schematic structural diagram of a valve plate assembly for a substrate processing system according to the present invention; Fig. 9 is a side view of a first valve plate in the valve plate assembly of Fig. 8.
請參考圖8,閥板組件包括:第一閥板401;與第一閥板401上下疊放的第二閥板402;位於第一閥板401和第二閥板402外圍的密封殼400,密封殼400沿水平方向X3具有第一開口405和第二開口406;第一驅動裝置403,用於使第一閥板401沿上下方向Y3和水平方向X3運動;第二驅動裝置404,用於使第二閥板402沿上下方向Y3和水平方向X3運動。Please refer to Figure 8, the valve plate assembly includes: a
第一驅動裝置403和第二驅動裝置404均包括上下動力裝置(圖中未示出)和水平動力裝置(圖中未示出),上下動力裝置用於使第一閥板401或者第二閥板402沿上下方向Y3運動,水平動力裝置用於使第一閥板401或者第二閥板402沿水平方向X3運動。Both the first driving device 403 and the
在本實施例中,第一閥板401的側壁設置有密封裝置401b,第一閥板401密封第一開口405的方法包括:利用上下動力裝置使第一閥板401沿上下方向Y3方向移動,直至第一閥板401與第一開口405相對;當第一閥板401與第一開口405相對之後,利用水平動力裝置使第一閥板401壓向密封殼400,使第一閥板401密封第一開口405。In this embodiment, the side wall of the
在本實施例中,第二閥板402的側壁設置有密封裝置402b,第二閥板402密封第二開口406的方法包括:利用上下動力裝置使第二閥板402沿上下方向Y3方向移動,直至第二閥板402與第二開口406相對;當第二閥板402與第二開口406相對之後,利用水平動力裝置使第二閥板402壓向密封殼400,使第二閥板402密封第二開口406。In this embodiment, the side wall of the
在本實施例中,第一閥板401的構造與第二閥板402的構造相同,具體的,第一閥板401的側壁設置有密封裝置401b,第二閥板402的側壁設置有密封裝置402b。In this embodiment, the structure of the
接下來將以第一閥板401為例進行說明,請參考圖9,圖9是圖8的閥板組件中第一閥板的側視圖。Next, the
當第一閥板401在上下動力裝置的作用下移動至與第一開口405相對的位置時,第一閥板401的密封裝置401b朝向第一開口405;第一閥板401在水平動力裝置的作用下壓向第一開口405密封第一開口405時,密封裝置401b環繞第一開口405。When the
圖10是根據本發明的另一種用於基片處理系統的閥板組件的結構示意圖;圖11是圖10的閥板組件中第一閥板的側視圖。Fig. 10 is a schematic structural diagram of another valve plate assembly for a substrate processing system according to the present invention; Fig. 11 is a side view of a first valve plate in the valve plate assembly of Fig. 10.
請參考圖10,閥板組件包括:第一閥板501;與第一閥板501上下疊放的第二閥板502;位於第一閥板501和第二閥板502外圍的密封殼500,密封殼500沿水平方向X4具有第一開口505和第二開口506;第一驅動裝置503,用於使第一閥板501沿上下方向Y4和水平方向X4運動;第二驅動裝置504,用於使第二閥板502沿上下方向Y4和水平方向X4運動。10, the valve plate assembly includes: a
在本實施例中,第一開口505的周圍具有第一臺階507;第二開口的周圍具有第二臺階508,第一閥板501具有與第一臺階507匹配的密封臺階501a和位於密封臺階501a上的密封裝置501b;第二閥板502具有與第二臺階508匹配的密封臺階502a和位於密封臺階502a上的密封裝置502b。In this embodiment, the
在其他實施例中,第一開口的周圍具有第一臺階,第二開口的周圍不具有第二臺階,第一閥板具有與第一臺階匹配的密封臺階和位於密封臺階上的密封裝置;或者,第一開口的周圍不具有第一臺階,第二開口的周圍具有第二臺階,第二閥板具有與第二臺階匹配的密封臺階和位於密封臺階上的密封裝置。In other embodiments, there is a first step around the first opening, and there is no second step around the second opening, and the first valve plate has a sealing step matching the first step and a sealing device located on the sealing step; or There is no first step around the first opening, and a second step around the second opening. The second valve plate has a sealing step matching the second step and a sealing device located on the sealing step.
在本實施例中,第一閥板501的形狀與第二閥板502的形狀相同。接下來將以第一閥板501的形狀為例進行說明,請參考圖11,圖11是圖10的閥板組件中第一閥板501的側視圖。In this embodiment, the shape of the
當第一閥板501密封第一開口505時,第一閥板501的密封裝置501b與第一開口505的周圍的第一臺階507接觸用於密封第一開口505。When the
在其他實施例中,第一閥板與第二閥板的形狀不同,第一閥板與第二閥板中其中一個為圖8中所示的構造,另一個則為圖10中所示的構造。In other embodiments, the shapes of the first valve plate and the second valve plate are different. One of the first valve plate and the second valve plate has the structure shown in FIG. 8 and the other has the structure shown in FIG. 10 structure.
圖12是根據本發明的基片處理系統工作方法的製程流程圖。FIG. 12 is a process flow chart of the working method of the substrate processing system according to the present invention.
請參考圖12,基片處理系統工作方法包含:步驟S1:提供上述基片處理系統;步驟S2:利用第一驅動裝置使第一閥板運動以密封第一基片傳輸口,及/或利用第二驅動裝置使第二閥板運動以密封第二基片傳輸口。12, the working method of the substrate processing system includes: Step S1: Provide the above-mentioned substrate processing system; Step S2: Use the first driving device to move the first valve plate to seal the first substrate transfer port, and/or use The second driving device moves the second valve plate to seal the second substrate transfer port.
第一閥板用於密封第一基片傳輸口,有利於確保第一腔內維持真空環境;第二閥板用於密封第二基片傳輸口,有利於確保第二腔內維持真空環境。當第一閥板需要維護時,使第二閥板密封第二基片傳輸口,則第二腔內仍能維持真空環境,當第二閥板需要維護時,使第一閥板密封第一基片傳輸口,則第一腔內仍能維持真空環境。當進行閥板的維護時,第一腔或者第二腔內仍能維持真空環境,使得第一腔或者第二腔內仍能繼續進行製程處理而無需停機,因此,有利於降低停機頻率,提高待處理基片的處理效率。The first valve plate is used to seal the first substrate transfer port, which is beneficial to ensure that the vacuum environment is maintained in the first cavity; the second valve plate is used to seal the second substrate transfer port, which is beneficial to ensure that the vacuum environment is maintained in the second cavity. When the first valve plate needs maintenance, make the second valve plate seal the second substrate transfer port, and the vacuum environment can still be maintained in the second cavity. When the second valve plate needs maintenance, the first valve plate is sealed to the first valve plate. The substrate transfer port can still maintain a vacuum environment in the first cavity. When the valve plate is maintained, the vacuum environment can still be maintained in the first cavity or the second cavity, so that the process processing can be continued in the first cavity or the second cavity without shutting down. Therefore, it is beneficial to reduce the frequency of downtime and improve The processing efficiency of the substrate to be processed.
雖然本發明揭露如上,但本發明並非限定於此。任何本領域具有通常知識者,在不脫離本發明的精神和範圍內,均可作各種更動與修改,因此本發明的保護範圍應當以申請專利範圍所限定的範圍為準。Although the present invention is disclosed as above, the present invention is not limited to this. Anyone with ordinary knowledge in the field can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be subject to the scope of the patent application.
100:製程腔
101:傳輸腔
102:負載鎖定腔
200,300:第一腔
201,301:第一基片傳輸口
202,302:第二腔
203,303:第二基片傳輸口
204,304:密封殼
205,305,401,501:第一閥板
205a,206a,305b,306b,401b,402b,501b,502b:密封裝置
206,306,402,502:第二閥板
207,307,403,503:第一驅動裝置
208,308,404,504:第二驅動裝置
209,309,405,505:第一開口
210,310,406,506:第二開口
305a,306a,501a,502a:密封臺階
311,507:第一臺階
312,508:第二臺階
400,500:密封殼
S1,S2:步驟
X1,X2,X3,X4:水平方向
Y1,Y2,Y3,Y4:上下方向100: process cavity
101: Transmission cavity
102: Load lock cavity
200,300: first cavity
201,301: The first substrate transfer port
202,302:
圖1是根據本發明的一種基片處理系統的俯視圖; 圖2是根據本發明的一種基片處理系統的剖面結構示意圖; 圖3是圖2的基片處理系統中第一閥板密封第一基片傳輸口的結構示意圖; 圖4是圖2的基片處理系統中第二閥板密封第二基片傳輸口的結構示意圖; 圖5是根據本發明的另一種基片處理系統的剖面結構示意圖; 圖6是圖5的基片處理系統中第一閥板密封第一基片傳輸口的結構示意圖; 圖7是圖5的基片處理系統中第二閥板密封第二基片傳輸口的結構示意圖; 圖8是根據本發明的一種用於基片處理系統的閥板組件的結構示意圖; 圖9是圖8的閥板組件中第一閥板的側視圖; 圖10是根據本發明的另一種用於基片處理系統的閥板組件的結構示意圖; 圖11是圖10的閥板組件中第一閥板的側視圖; 圖12是根據本發明的基片處理系統工作方法的流程圖。Figure 1 is a top view of a substrate processing system according to the present invention; 2 is a schematic diagram of a cross-sectional structure of a substrate processing system according to the present invention; 3 is a schematic view of the structure of the first valve plate sealing the first substrate transfer port in the substrate processing system of FIG. 2; 4 is a schematic structural view of the second valve plate sealing the second substrate transfer port in the substrate processing system of FIG. 2; 5 is a schematic cross-sectional structure diagram of another substrate processing system according to the present invention; 6 is a schematic structural view of the first valve plate sealing the first substrate transfer port in the substrate processing system of FIG. 5; FIG. 7 is a schematic structural view of the second valve plate sealing the second substrate transfer port in the substrate processing system of FIG. 5; FIG. Figure 8 is a schematic structural view of a valve plate assembly for a substrate processing system according to the present invention; Figure 9 is a side view of the first valve plate in the valve plate assembly of Figure 8; Figure 10 is a schematic structural view of another valve plate assembly for a substrate processing system according to the present invention; Figure 11 is a side view of the first valve plate in the valve plate assembly of Figure 10; FIG. 12 is a flowchart of the working method of the substrate processing system according to the present invention.
200:第一腔200: first cavity
201:第一基片傳輸口201: The first substrate transfer port
202:第二腔202: second cavity
203:第二基片傳輸口203: second substrate transfer port
204:密封殼204: Sealed shell
205:第一閥板205: The first valve plate
206:第二閥板206: The second valve plate
207:第一驅動裝置207: The first drive device
208:第二驅動裝置208: second drive device
209:第一開口209: The first opening
210:第二開口210: second opening
X1:水平方向X1: horizontal direction
Y1:上下方向Y1: Up and down direction
Claims (22)
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| CN201910882766.XA CN112530830A (en) | 2019-09-18 | 2019-09-18 | Substrate processing system, valve plate assembly and working method of substrate processing system |
| CN201910882766.X | 2019-09-18 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100054905A1 (en) * | 2008-08-27 | 2010-03-04 | Mehran Behdjat | Load lock chamber for large area substrate processing system |
| CN106298583A (en) * | 2015-05-27 | 2017-01-04 | 中微半导体设备(上海)有限公司 | Process chamber, process chamber and vacuum lock combination and substrate handling system |
| TW201707110A (en) * | 2015-08-11 | 2017-02-16 | 中微半導體設備(上海)有限公司 | Substrate processing system |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7806383B2 (en) * | 2007-06-01 | 2010-10-05 | Applied Materials, Inc. | Slit valve |
| TWI462208B (en) * | 2007-11-23 | 2014-11-21 | Jusung Eng Co Ltd | Slot valve assembly and method of operating the same |
| JP5000555B2 (en) * | 2008-03-12 | 2012-08-15 | 東京エレクトロン株式会社 | Gate valve and semiconductor manufacturing equipment |
| KR101626035B1 (en) * | 2009-03-03 | 2016-06-13 | 위순임 | Gate valve assembly and water processing system having the same |
| JP5725782B2 (en) * | 2010-09-30 | 2015-05-27 | 株式会社ブイテックス | Valve device |
| JP5806827B2 (en) * | 2011-03-18 | 2015-11-10 | 東京エレクトロン株式会社 | Gate valve apparatus, substrate processing apparatus and substrate processing method thereof |
| KR20160119643A (en) * | 2015-04-06 | 2016-10-14 | 주식회사 퓨젠 | Rectangular gate vacuum valve and controlling method therefor, and semiconductor manufacturing apparatus |
| KR101597818B1 (en) * | 2015-06-19 | 2016-02-25 | 주식회사 퓨젠 | Rectangular gate vacuum valve |
| US20170309457A1 (en) * | 2016-04-26 | 2017-10-26 | Asm Ip Holding B.V. | Substrate processing apparatus |
| CN206301757U (en) * | 2016-11-17 | 2017-07-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Cavity seal and semiconductor processing equipment |
| KR20190046440A (en) * | 2017-10-26 | 2019-05-07 | 에이피티씨 주식회사 | Semiconductor apparatus including dual gate valve |
| KR102021928B1 (en) * | 2019-04-04 | 2019-09-17 | (주)다스 | Apparatus for Sensing Closing and Opening of Gate Valve |
-
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- 2019-09-18 CN CN201910882766.XA patent/CN112530830A/en active Pending
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100054905A1 (en) * | 2008-08-27 | 2010-03-04 | Mehran Behdjat | Load lock chamber for large area substrate processing system |
| CN106298583A (en) * | 2015-05-27 | 2017-01-04 | 中微半导体设备(上海)有限公司 | Process chamber, process chamber and vacuum lock combination and substrate handling system |
| TW201707110A (en) * | 2015-08-11 | 2017-02-16 | 中微半導體設備(上海)有限公司 | Substrate processing system |
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