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TWI868035B - 清潔方法 - Google Patents

清潔方法 Download PDF

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TWI868035B
TWI868035B TW113123295A TW113123295A TWI868035B TW I868035 B TWI868035 B TW I868035B TW 113123295 A TW113123295 A TW 113123295A TW 113123295 A TW113123295 A TW 113123295A TW I868035 B TWI868035 B TW I868035B
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impedance
plasma
electrode
impedance adjuster
adjuster
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美山遼
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荷蘭商Ａｓｍ Ｉｐ私人控股有限公司
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Abstract

一種基板處理設備之範例包含一腔室、設於腔室中且具有一電極於其中之一承載盤、面向承載盤之一金屬板、具有不同阻抗之複數個阻抗調整器、以及配置以連接複數個阻抗調整器其中一者至電極之一選擇裝置。

Description

清潔方法
說明有關一種基板處理設備以及清潔腔室內部之方法的範例。
一在化學氣相沉積(Chemical Vapor Deposition，CVD)或原子層沉積(Atomic Layer Deposition，ALD)中清潔腔室內部之方法可粗略地分類為一遠端電漿方法及一直接電漿方法。在以一譬如三氟化氮(NF 3)等鹵素施行之遠端電漿清潔中，除了在一射頻電極與一承載盤之間的一區域外，亦可促進其餘區域上之清潔。然而，在譬如一高模數碳程序(HM carbon process)中，薄膜形成溫度係高達500℃或更高，造成對腔室部份之損害。在譬如僅以氧施行之遠端電漿清潔中，活性物種很可能去活化，而導致清潔無效率。
另一方面，在譬如以氧電漿施行之直接電漿清潔中，由於電漿及活性物種基本上僅產生於一射頻電極與一承載盤之間，因此清潔效率在其他區域中下降。例如，在承載盤之一下方部份上、或在包圍承載盤之一排氣道內部的清潔可能不充分。倘一腔室內部未適當地清潔，則可能在腔室中產生微粒。除此以外，無效率之清潔降低生產量。
本文所述之某些範例可對付上述問題。本文所述之某些範例可提供一種基板處理設備以及清潔方法，其可能清潔一腔室中之一廣範圍(wide range)。
在某些範例中，一基板處理方法包含一腔室、設於腔室中且具有一電極於其中之一承載盤、面向承載盤之一金屬板、具有不同阻抗之複數個阻抗調整器、及配置以連接複數個阻抗調整器其中一者至電極之一選擇裝置。
將參考圖式說明一種基板處理設備以及清潔腔室內部之方法。相同之參考符號可用於相同或對應之組件，藉此省略多餘之說明。
第1圖圖示出依據一具體實施例之一基板處理設備10的一配置範例。基板處理設備10包含一腔室12、及腔室12中之一承載盤16。承載盤16包含一基座16a、及基座16a內部之一電極16b。基座16a係譬如屬於一碳基材料，諸如碳化矽、一石墨材料、或陶瓷。電極16b之大部份埋置於基座16a中。一承載盤加熱器可設於基座16a之內部、或周邊上。在承載盤16上，提供一面向承載盤16之金屬板14。金屬板14設有複數個狹縫14a。承載盤16與金屬板14提供一平行平板結構。一交流電源供應器連接至金屬板14。交流電源供應器施加譬如高射頻(High-RF，HRF)及低射頻( Low-RF，LRF)至金屬板14。高射頻之頻率係譬如13.56百萬赫茲或27百萬赫茲；及低射頻之頻率係譬如5百萬赫茲、或400千赫茲到500千赫茲。
一排氣道30透過一O型環34安裝於腔室12上。排氣道30可成型為包圍承載盤16。金屬板14透過一O型環32安裝於排氣道30上。
第1圖中圖示出三個氣體源23、24、及25。氣體從此等氣體源23、24、及25經由金屬板14之狹縫14a供應至承載盤16與金屬板14之間的一空間中。氣體係用於譬如基板處理或清潔。例如，金屬板14係一射頻功率施加所至之一高頻電極，且亦為一供應氣體藉由狹縫14a之噴淋頭(shower head)。在另一範例中，氣體可從任何位置供應至金屬板與承載盤之間的一空間中。已用於譬如基板處理或清潔等一程序之氣體被導引藉由排氣道30而至一排氣埠26。
基板處理設備10包含複數個具有不同阻抗之阻抗調整器。在一第1圖中之範例中，提供一第一阻抗調整器42及一第二阻抗調整器44作為複數個阻抗調整器之範例。為了將複數個阻抗調整器其中一者連接至電極16b，提供一選擇裝置40。選擇裝置40係譬如一開關。在第1圖中之範例中，選擇裝置40使第一阻抗調整器42與電極16b連接。如第1圖中所示者，第一阻抗調整器42及第二組抗調整器44接地。接地之手段可譬如為與一接地金屬接觸、與一接地端接觸、或與腔室12接觸。
第2A圖係顯示複數個阻抗調整器之一配置範例的一電路圖。電極16b具有一電感元件，且因此圖示為一電感器。在第2A圖中之範例中，複數個阻抗調整器包含：一第一阻抗調整器42，具有一第一電容器42a；及一第二阻抗調整器44，具有一第二電容器44a。
阻抗Z係使用電阻R及電抗X而以下者表示： Z=R+jX
除此以外，起因於被包含在電極16b中之一電感元件的阻抗Z L、及起因於被連接至電極16b之一電容器的阻抗Z C係藉以下者表示： Z L=jX L=jωL Z C=jX C=1/(jωC)=-j/(ωC) 其中 字母L係電極16b之一電感； 記號ω係施加至金屬板14之一射頻功率的角頻率、即2πf，及 字母C係連接至電極16b之電容器的電容。
又， 電感L係藉電極16b之外型決定。
從承載盤16到一GND之阻抗係藉阻抗Z L與阻抗Z C之總和得到。當施加到置於承載盤16上之一基板的電漿處理、或一般清潔係在腔室內實施時，電漿係在複數個平行平板之間產生，且在其他部份中之電漿產生被抑制。在本情況下，Z L+Z C設定至一較低數值。在第2A圖中之範例中，第一電容器42a之電容C A被調整，以得到較低Z L+Z C。當藉電容C A提供之阻抗係定義成Z CA時，Z L+Z CA被設定成一較小數值。具體地，第一阻抗調整器42之阻抗與電極16b之阻抗的總和設定成較電極16b之阻抗小。在本範例中，電容C A設計成得到Z L+Z CA＜Z L、電極16b與第一阻抗調整器42藉選擇裝置40連接、及使承載盤16作用如一GND，藉此造成金屬板14與承載盤16之間的一放電。氣體被供應於平行平板之間，且一射頻功率被施加至金屬板14，以在平行平板之間產生電漿。
當藉選擇裝置40連接電極16b與第一阻抗調整器42而產生電漿時，意指電漿僅在平行平板之間產生。在本情況下，電容C A被調整，以使Z L與Z CA互相補償來使Z L+Z CA較低。
例如，為了使Z L+Z CA為零，決定電容C A，使得Z L+Z CA=jωL-j/(ωC A)為零。此一C A等於1/(ω 2L)。Z A+Z CA並非必須為零；當其為一足夠地低之數值時，可大致抑制對除平行平板外之部份的一放電。
第4圖顯示藉使用第一阻抗調整器42之電漿處理或一般清潔中的電漿。電漿50係在金屬板14與承載盤16之間產生；且在其他部份處，並未產生顯著之電漿。
另一方面，提供第2A圖中之第二阻抗調整器44，以在腔室中除平行平板之間的一空間外之一區間中產生電漿。第二阻抗調整器44增加從承載盤16到GND之阻抗。當第二電容器44a之電容定義成C B，且藉電容C B提供之阻抗定義成Z CB時，Z L+Z CB被設定成一較大數值。具體地，設計電容C B，以得到Z L+Z CB＞Z L+Z CA。接著，電極16b與第二阻抗調整器44藉選擇裝置40連接、氣體被供應至腔室中、及一射頻功率被施加至金屬板14；藉此在腔室中產生電漿。
此時，從承載盤16到GND之阻抗為高，且因此除平行平板之間的一放電外、或代替放電，一放電發生在金屬板14與腔室12之間。緣是，當電極16b藉第二阻抗調整器44接地時，電漿在腔室中之一廣範圍中產生。
第5圖顯示藉使用第二阻抗調整器44之廣範圍清潔中的電漿。電漿50在幾乎腔室12之所有區間中產生。依據某一範例，電漿50包含︰電漿50A，產生於金屬板14與承載盤16之間；電漿50B，產生於排氣道30中；及電漿50C，產生於承載盤16下方。此類電漿50如上述者能夠在一廣範圍中清潔。
是以，提供複數個阻抗調整器，來調整從承載盤到GND之阻抗，以自由地改變電漿產生所在之一位置。第2A圖中之第二電容器42a及第二電容器44a係複數個阻抗調整器之範例；且可提供具有另一配置之複數個阻抗調整器。
第2B圖顯示複數個阻抗調整器之另一範例。複數個阻抗調整器包含︰一第一阻抗調整器42，具有一電容器42b；及一第二阻抗調整器44，僅具有配線44b。在本情況下，一廣範圍清潔係在一電極16b經由配線44b接地之同時實施。當僅藉電極16b之一阻抗Z L得到一足夠地高之阻抗時，第二阻抗調整器44僅需配線。
第3A圖顯示複數個阻抗調整器之又一範例。複數個阻抗調整器包含︰一第一阻抗調整器42，具有一電容器42c，一第二阻抗調整器44，具有一線圈44c。在本情況下，第二阻抗調整器44之阻抗與電極16b之阻抗Z L的總和可設定成較電極16b之阻抗Z L大。
第3B圖顯示複數個阻抗調整器之更一範例。複數個阻抗調整器包含︰一電容器42d，作為第一阻抗調整器42；及一電容器與一線圈之一並聯電路44d，作為一第二阻抗調整器44。在第2A圖、第2B圖、及第3A圖中之範例中，一電容器或配線用作為一阻抗調整器。然而，可藉使用電容器及線圈二者作為一阻抗調整器，根據譬如施加至金屬板14之一射頻功率的頻率，得到一預期阻抗。
第2A圖、第2B圖、第3A圖、及第3B圖顯示複數個阻抗調整器之配置範例；亦可採取其他電路。第6圖顯示依據另一範例之複數個阻抗調整器的一配置範例。在一第6圖中之範例中，提供具有不同阻抗之一第一阻抗調整器62、一第二阻抗調整器64、及一第三阻抗調整器66，作為複數個阻抗調整器之範例。依據某一範例，當電極16b經由第一阻抗調整器62接地時，電漿大致僅在複數個平行平板之間產生；當電極16b經由第二阻抗調整器64或第三阻抗調整器66接地時，電漿亦在腔室中除平行平板外之區間中產生。第二阻抗調整器64與第三阻抗調整器66之間阻抗的差異可導致腔室內電漿分布之差異。恰當使用第二阻抗調整器64及第三阻抗調整器66，能夠在一預期位置處清潔。除此以外，可提供三個或更多阻抗調整器，以達成各式電漿分布。
一種依據某一範例之清潔一腔室內部的方法包含施加一高頻功率至一金屬板14，且同時一電極16b經由一第一阻抗調整器42接地，以在一承載盤16與金屬板14之間的一第一區間中產生電漿。在第一區間中產生之電漿可用於譬如在置於承載盤16上之一基板上形成一薄膜、蝕刻基板上之薄膜、及重組基板。電漿亦可用於清潔腔室內部。待供應之氣體係依據電漿之使用目的而改變。
當電極16b經由第一阻抗調整器42接地時，譬如產生碳氫化合物電漿，藉此容許一碳薄膜、或一包含碳之薄膜形成於基板上。例如，可形成一需要高溫程序之高模數碳薄膜。在碳薄膜形成中，碳亦藉擴散而沉積於承載盤之下方表面上。對於高模數碳，難以實施藉一鹵素施行之遠端清潔。
無法藉電漿僅產生於平行平板之間的一般清潔來移除承載盤之下方表面的表面上之一沉積物。
在一種已採取以上配置之清潔一腔室內部的方法中，一高頻功率施加至金屬板14，且同時電極16b經由阻抗不同於第一阻抗調整器42者之第二阻抗調整器44接地，以在複數個平行平板之間的一第一區間中、及承載盤之下方表面上的一第二區間中產生電漿。此電漿係譬如氧基電漿。藉電漿，可移除承載盤16之下方表面上的一沉積物。在另一範例中，調整第二阻抗調整器44之阻抗或使用第三阻抗調整器，容許電漿產生於第一區間及第二區間中、且亦在排氣道30中之第三區間中。
在使用第二阻抗調整器44之一廣範圍清潔中，調整第二阻抗調整器44之阻抗容許電漿產生於腔室之任何位置處。上述之一般清潔及廣範圍清潔，可產生氧基電漿。
在某一範例中，腔室內部之壓力設定至650帕斯卡、高射頻設定至2500瓦特、金屬板14之溫度設定至240℃、承載盤16之溫度設定至650℃、及腔室12之一壁表面的溫度設定至240℃、且同時標準狀態下每分鐘7.6公升(slm)氧氣與標準狀態下每分鐘2.4公升(slm)氬氣供應於具有一14.5公釐間隙之複數個平行平板之間。在本條件下，當電極16b藉第一電容器42a接地而第2A圖中之第一電容器42a的電容設定至1000皮法(pF)時，無放電發生在承載盤之下方表面側上。然而，在相同條件下，當電極16b藉第二電容器44a接地而第2A圖中之第二電容器44a的電容設定至2500皮法(pF)時，放電發生在承載盤之下方表面側上。
10:基板處理設備 12:腔室 14:金屬板 14a:狹縫 16:承載盤 16a:基座 16b:電極 23:氣體源 24:氣體源 25:氣體源 26:排氣埠 30:排氣道 32:O型環 34:O型環 40:選擇裝置 42:第一阻抗調整器 42a:第一電容器 42b:電容器 42c:電容器 42d:電容器 44:第二阻抗調整器 44a:第二電容器 44b:配線 44c:線圈 44d:並聯電路 50:電漿 50A:電漿 50B:電漿 50C:電漿 62:第一阻抗調整器 64:第二阻抗調整器 66:第三阻抗調整器
第1圖顯示一基板處理設備之一配置範例； 第2A圖顯示複數個阻抗調整器之一配置範例； 第2B圖顯示複數個阻抗調整器之另一範例； 第3A圖顯示複數個阻抗調整器之又一範例； 第3B圖顯示複數個阻抗調整器之更一範例； 第4圖顯示藉使用第一阻抗調整器之電漿處理或一般清潔中的電漿； 第5圖顯示藉使用第二阻抗調整器之廣範圍清潔中的電漿；及 第6圖顯示依據另一範例之複數個阻抗調整器的一配置範例。
10:基板處理設備 12:腔室 14:金屬板 14a:狹縫 16:承載盤 16a:基座 16b:電極 23:氣體源 24:氣體源 25:氣體源 26:排氣埠 30:排氣道 32:O型環 34:O型環 40:選擇裝置 42:第一阻抗調整器 44:第二阻抗調整器

Claims (4)

  1. 一種清潔方法，包括： 施加一高頻功率至面向一腔室中之一承載盤的一金屬板，且同時該承載盤之一電極經由一第一阻抗調整器接地，以在該承載盤與該金屬板之間的一第一區間中產生電漿；以及 施加一高頻功率至該金屬板，且同時該電極經由一阻抗不同於該第一阻抗調整器者之一第二阻抗調整器而接地，以在該第一區間、及該承載盤之一下方表面側上的一第二區間中產生電漿。
  2. 如請求項1之清潔方法，其中， 當電漿係在該第二區間中產生時，電漿亦在設成包圍該承載盤之一排氣道中的一第三區間中產生。
  3. 如請求項1或2之清潔方法，其中， 置於該承載盤上之一基板係以電漿處理，該電漿係在該第一區間中產生，且同時該電極係經由該第一阻抗調整器接地。
  4. 如請求項3之清潔方法，其中， 當該電極係經由該第一阻抗調整器接地以在該第一區間中產生電漿時，產生碳氫化合物電漿；且 當該電極係經由該第二阻抗調整器接地以在該第一區間及該第二區間中產生電漿時，產生氧基電漿。
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