TWI863991B - Grinding device - Google Patents
Grinding device Download PDFInfo
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- TWI863991B TWI863991B TW109115700A TW109115700A TWI863991B TW I863991 B TWI863991 B TW I863991B TW 109115700 A TW109115700 A TW 109115700A TW 109115700 A TW109115700 A TW 109115700A TW I863991 B TWI863991 B TW I863991B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B19/00—Single-purpose machines or devices for particular grinding operations not covered by any other main group
- B24B19/22—Single-purpose machines or devices for particular grinding operations not covered by any other main group characterised by a special design with respect to properties of the material of non-metallic articles to be ground
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- H10P72/3302—
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/005—Feeding or manipulating devices specially adapted to grinding machines
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/02—Frames; Beds; Carriages
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
- B25J11/00—Manipulators not otherwise provided for
- B25J11/0095—Manipulators transporting wafers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
- B25J15/00—Gripping heads and other end effectors
- B25J15/06—Gripping heads and other end effectors with vacuum or magnetic holding means
- B25J15/0616—Gripping heads and other end effectors with vacuum or magnetic holding means with vacuum
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- H10P72/0428—
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- H10P72/74—
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- H10P72/78—
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Dicing (AREA)
Abstract
[課題]適當搬送包含改質層之彎曲的晶圓。 [解決手段]將暫置平台(61)上的晶圓(W)藉由搬入機構(31)而搬送至吸盤平台時,藉由吸引墊(81)保持晶圓(W)的中央,並且藉由複數外周吸引保持部(89)保持晶圓(W)的外周部分。藉此,可抑制晶圓(W)的外周部分下垂,且堅固地保持晶圓(W)。因此,即使晶圓(W)彎曲,亦可良好地保持暫置平台(61)上的晶圓(W),且適當地搬送至吸盤平台的保持面。因此,為了適當地搬送晶圓(W),不需要對晶圓(W)實施用以抑制彎曲的加工。結果,可縮短晶圓(W)的加工時間。[Topic] Properly transporting a wafer including a curved modified layer. [Solution] When a wafer (W) on a temporary platform (61) is transported to a suction cup platform by a transport mechanism (31), the center of the wafer (W) is held by a suction pad (81), and the peripheral portion of the wafer (W) is held by a plurality of peripheral suction holding portions (89). Thus, sagging of the peripheral portion of the wafer (W) can be suppressed, and the wafer (W) can be firmly held. Therefore, even if the wafer (W) is bent, the wafer (W) on the temporary platform (61) can be well held and properly transported to the holding surface of the suction cup platform. Therefore, in order to properly transport the wafer (W), it is not necessary to perform processing on the wafer (W) to suppress bending. As a result, the processing time of the wafer (W) can be shortened.
Description
本發明係關於研削裝置。The present invention relates to a grinding device.
有沿著分割預定線在晶圓的內部形成改質層,且將該晶圓的背面研削而薄化,並且按每個元件進行分割的加工方法(SDBG)(參照專利文獻1)。There is a processing method (SDBG) in which a modified layer is formed inside a wafer along a predetermined dividing line, the back side of the wafer is ground to be thinned, and the wafer is divided into individual components (see Patent Document 1).
在如上所示之加工方法中,係在晶圓的表面側形成改質層。因此,因改質層的形成,晶圓的內部膨脹,有晶圓彎曲成背面側凹陷的情形。此時,難以將晶圓搬送至研削裝置的吸盤平台。In the processing method shown above, the modified layer is formed on the surface side of the wafer. Therefore, due to the formation of the modified layer, the inside of the wafer expands, and the wafer is sometimes bent and concave on the back side. At this time, it is difficult to transport the wafer to the suction table of the grinding device.
因此,有藉由在晶圓的背面側形成改質層,來抑制彎曲(翹曲)的加工方法(參照專利文獻2)。此外,亦有對晶圓施行用以抑制彎曲的加工的技術(參照專利文獻3)。 [先前技術文獻] [專利文獻]Therefore, there is a processing method for suppressing bending (warp) by forming a modified layer on the back side of the wafer (see Patent Document 2). In addition, there is also a technology for performing processing on the wafer to suppress bending (see Patent Document 3). [Prior Technical Document] [Patent Document]
[專利文獻1]日本特開2006-012902號公報 [專利文獻2]日本特開2013-214601號公報 [專利文獻3]日本特開2016-025188號公報[Patent Document 1] Japanese Patent Publication No. 2006-012902 [Patent Document 2] Japanese Patent Publication No. 2013-214601 [Patent Document 3] Japanese Patent Publication No. 2016-025188
(發明所欲解決之問題)(Invent the problem you want to solve)
但是,僅為了抑制晶圓的彎曲而變更改質層的形成部位、或對晶圓施行加工,係會導致生產效率惡化。However, changing the formation position of the metamorphic layer or performing processing on the wafer simply to suppress the bending of the wafer will lead to deterioration of production efficiency.
本發明之目的在適當搬送包含改質層之彎曲的晶圓。 (解決問題之技術手段)The purpose of the present invention is to properly transport a curved wafer including a modified layer. (Technical means for solving the problem)
本發明之研削裝置(本研削裝置)係在表面中被分割預定線所區劃的區域形成元件,在該表面貼著膠帶,沿著該分割預定線,在內部形成改質層,且透過該膠帶,藉由吸盤平台的保持面保持翹曲成背面側凹陷的晶圓,藉由研削砥石來研削晶圓的背面的研削裝置,其至少具備:用以暫置晶圓的暫置平台;具有透過該膠帶來保持晶圓的保持面的吸盤平台;及由該暫置平台將晶圓搬送至該吸盤平台的搬送手段,該搬送手段係具備:吸引保持晶圓的背面的中央部分的中央吸引保持部;吸引保持原被吸引保持在該中央吸引保持部的晶圓的外周部分的外周吸引保持部;及將使中央部分接觸到該保持面的晶圓的外周部分按壓在該保持面的環狀的按壓部,該搬送手段由該暫置平台吸引保持晶圓時,該中央吸引保持部與該外周吸引保持部被連通至吸引源,該搬送手段將晶圓搬送至該吸盤平台的該保持面時,該中央吸引保持部與該外周吸引保持部被連通至空氣供給源而消除吸引保持力,該按壓部將晶圓的外周部分按壓在該保持面,該保持面被連通至吸引源,以研削砥石研削原被吸引保持在該保持面的晶圓。 (發明之效果)The grinding device of the present invention (this grinding device) is a device that forms an element in an area demarcated by a predetermined dividing line on a surface, adheres an adhesive tape to the surface, forms a modified layer inside along the predetermined dividing line, and holds a wafer that is curved to have a concave back side by the holding surface of a suction cup platform through the adhesive tape, and grinds the back side of the wafer by a grinding stone. The grinding device at least comprises: a temporary platform for temporarily placing the wafer; a suction cup platform having a holding surface for holding the wafer through the adhesive tape; and a conveying means for conveying the wafer from the temporary platform to the suction cup platform, the conveying means comprising: a central suction holding portion for sucking and holding the central portion of the back side of the wafer; and a suction holding portion for sucking and holding the original wafer. The peripheral suction holding part holds the peripheral part of the wafer held by the central suction holding part; and the annular pressing part presses the peripheral part of the wafer whose central part contacts the holding surface against the holding surface. When the transporting means attracts and holds the wafer by the temporary platform, the central suction holding part and the peripheral suction holding part are connected to the suction source. When the transporting means transports the wafer to the holding surface of the suction pad platform, the central suction holding part and the peripheral suction holding part are connected to the air supply source to eliminate the suction holding force. The pressing part presses the peripheral part of the wafer against the holding surface, and the holding surface is connected to the suction source, so that the grinding stone grinds the wafer originally attracted and held on the holding surface. (Effect of the invention)
在本研削裝置中,將暫置平台上的晶圓藉由搬送手段而搬送至吸盤平台時,藉由中央吸引保持部保持晶圓的中央,並且藉由外周吸引保持部保持晶圓的外周部分。藉此,可抑制晶圓的外周部分下垂,且堅固地保持晶圓。 因此,即使晶圓彎曲,亦可良好地保持暫置平台上的晶圓,且適當地搬送至吸盤平台的保持面。因此,在本研削裝置中,為了適當地搬送晶圓,不需要對晶圓實施用以抑制彎曲的加工。結果,可縮短晶圓的加工時間。In the present grinding device, when the wafer on the temporary platform is transferred to the suction pad platform by the transfer means, the center of the wafer is held by the central suction holding part, and the peripheral part of the wafer is held by the peripheral suction holding part. In this way, the peripheral part of the wafer can be suppressed from sagging, and the wafer can be firmly held. Therefore, even if the wafer is bent, the wafer on the temporary platform can be well held and properly transferred to the holding surface of the suction pad platform. Therefore, in order to properly transfer the wafer, in the present grinding device, it is not necessary to actually perform processing on the wafer to suppress bending. As a result, the processing time of the wafer can be shortened.
圖1所示之研削裝置1係構成為對晶圓W以全自動實施包含搬入處理、研削加工、洗淨處理、及搬出處理的一連串作業。The
圖1所示之晶圓W係例如圓形的半導體晶圓。如圖2所示,在晶圓W的表面Wa,係在藉由格子狀的分割預定線L被區劃的部分的各個形成有元件D。此外,沿著分割預定線L,在晶圓W的內部形成有未圖示的改質層。 晶圓W的表面Wa在圖1中係朝向下方,藉由貼著保護膠帶T予以保護。晶圓W的背面Wb係成為施加研削加工的被加工面。The wafer W shown in FIG1 is, for example, a circular semiconductor wafer. As shown in FIG2, on the surface Wa of the wafer W, components D are formed in each of the portions divided by the grid-shaped predetermined dividing lines L. In addition, along the predetermined dividing lines L, a modified layer not shown is formed inside the wafer W. The surface Wa of the wafer W faces downward in FIG1 and is protected by a protective tape T. The back side Wb of the wafer W becomes the processed surface to which grinding is applied.
研削裝置1係具備有:大致矩形的第1裝置基底11、連結於第1裝置基底11的後方(+Y方向側)的第2裝置基底12、朝上方延伸的支柱13、及覆蓋第1裝置基底11及第2裝置基底12的框體14。The
在第1裝置基底11的正面側(-Y方向側)係設有第1匣盒載台151及第2匣盒載台152。在第1匣盒載台151係載置有收容加工前的晶圓W的第1匣盒151a。在第2匣盒載台152係載置有收容加工後的晶圓W的第2匣盒152a。A
第1匣盒151a及第2匣盒152a係在內部具備有複數棚架,一枚一枚地收容晶圓W在各棚架。The
第1匣盒151a的開口(未圖示)係朝向+Y方向側。在該開口的+Y方向側係配設有機器人155。機器人155係具備有具有吸引保持晶圓W的背面Wb的全面的吸引面的吸引墊。機器人155係將加工後的晶圓W搬入至第2匣盒152a。此外,機器人155係由第1匣盒151a搬出加工前的晶圓W,而載置於暫置平台61。The opening (not shown) of the
暫置平台61係用以暫置晶圓W者,設在鄰接機器人155的位置。如圖1及圖3所示,在暫置平台61係配設有複數對位手段63。對位手段63係呈縮徑的對位銷,沿著暫置平台61的徑向移動,藉此將使背面Wb形成為上而載置於暫置平台61的晶圓W,對位(定心)在預定的位置。
其中,在本實施形態中,晶圓W係如圖3所示,彎曲成背面Wb側凹陷,外周部分上翹。The
此外,暫置平台61係如圖3所示,具備有:可吸附保持晶圓W的保護膠帶T側的暫置保持面62。暫置保持面62係可透過第1空氣閥64及第1吸引閥65的任一者,而與第1空氣源66及第1吸引源67的任一者相連通。
進行藉由對位手段63所為之對位時,如圖3所示,第1空氣閥64及第1吸引閥65之雙方均被關閉。In addition, as shown in FIG3 , the
如圖1所示,在鄰接暫置平台61的位置係設有搬入機構31。搬入機構31係相當於搬送手段之一例。搬入機構31係吸引保持被暫置於暫置平台61的晶圓W而搬送至吸盤平台30,且載置於其保持面300。As shown in FIG1 , a
吸盤平台30係具備有吸附晶圓W的保持面300。保持面300係與吸引源相連通,透過保護膠帶T來吸引保持晶圓W。吸盤平台30係可在將晶圓W保持在保持面300的狀態下,以通過保持面300的中心之以Z軸方向延伸的中心軸進行旋轉。The
吸盤平台30的周圍係被蓋件39所包圍。在該蓋件39係連結有以Y軸方向作伸縮的蛇腹蓋件39a。接著,在蓋件39及蛇腹蓋件39a的下方係配設有未圖示的Y軸方向移動手段。吸盤平台30係可藉由該Y軸方向移動手段而以Y軸方向往返移動。The
在第2裝置基底12上的後方(+Y方向側)係立設有支柱13。在支柱13的前面係設有:研削晶圓W的研削手段7、及使研削手段7以研削進給方向亦即Z軸方向移動的研削進給手段2。A
研削進給手段2係具備有:與Z軸方向呈平行的一對Z軸導軌21、在該Z軸導軌21上滑動的Z軸移動平台23、與Z軸導軌21呈平行的Z軸滾珠螺桿20、Z軸伺服馬達22、及被安裝在Z軸移動平台23的前面(表面)的保持具24。保持具24係保持有研削手段7。The grinding feed means 2 includes: a pair of Z-
Z軸移動平台23係設置成可在Z軸導軌21滑動。未圖示的螺帽部被固定在Z軸移動平台23的後面側(背面側)。在該螺帽部係螺合有Z軸滾珠螺桿20。Z軸伺服馬達22係連結於Z軸滾珠螺桿20的一端部。The Z-
在研削進給手段2中,Z軸伺服馬達22使Z軸滾珠螺桿20旋轉,藉此,Z軸移動平台23沿著Z軸導軌21以Z軸方向移動。藉此,被安裝在Z軸移動平台23的保持具24、及被保持在保持具24的研削手段7亦連同Z軸移動平台23一起以Z軸方向移動。In the grinding feed means 2, the Z-
研削手段7係具備有:被固定在保持具24的心軸殼體71、可旋轉地被保持在心軸殼體71的心軸70、旋轉驅動心軸70的馬達72、被安裝在心軸70的下端的輪座73、及被支持在輪座73的研削輪74。The grinding means 7 comprises: a
心軸殼體71係以朝Z軸方向延伸的方式被保持在保持具24。心軸70係以與吸盤平台30的保持面300呈正交的方式以Z軸方向延伸,且可旋轉地被支持在心軸殼體71。The
馬達72係連結於心軸70的上端側。藉由該馬達72,心軸70係以沿著Z軸方向的旋轉軸為中心進行旋轉。
輪座73係形成為圓板狀,且被固定在心軸70的下端(前端)。輪座73係支持研削輪74。The
研削輪74係形成為具有與輪座73大致相同直徑。研削輪74係包含:由不銹鋼等金屬材料所形成的圓環狀的輪基台(環狀基台)740。在輪基台740的下表面係遍及全周固定有被配置成環狀的複數研削砥石741。研削砥石741係研削被保持在吸盤平台30的晶圓W的背面Wb。The grinding wheel 74 is formed to have substantially the same diameter as the
在鄰接吸盤平台30的位置係配設有厚度測定器38。厚度測定器38係可在研削中,例如以接觸式測定晶圓W的厚度。A
研削後的晶圓W係被搬出機構36搬出。作為第1搬出手段的搬出機構36係具備有具有吸引保持晶圓W的背面Wb的全面的吸引面的吸引墊。搬出機構36係藉由吸引墊,吸引保持被載置於吸盤平台30的研削加工後的晶圓W的背面Wb,由吸盤平台30搬出而搬送至單片式的旋轉器洗淨單元26的旋轉器平台27。The ground wafer W is carried out by the carrying-out
旋轉器洗淨單元26係具備有:保持晶圓W的旋轉器平台27、及朝向旋轉器平台27噴射洗淨水及乾燥空氣的各種噴嘴(未圖示)。The
在旋轉器洗淨單元26中,保持晶圓W的旋轉器平台27下降至第1裝置基底11內。接著,在第1裝置基底11內,朝向晶圓W的背面Wb噴射洗淨水,背面Wb被旋轉器洗淨。之後,乾燥空氣被噴吹至晶圓W,晶圓W即被乾燥。In the
藉由旋轉器洗淨單元26被洗淨的晶圓W係藉由作為第2搬出手段的機器人155,被搬入至第2匣盒152a。The wafer W cleaned by the
此外,在框體14中的-Y側的側面係設置有觸控面板40。在觸控面板40係顯示研削裝置1的加工狀況、及藉由研削裝置1所為之對晶圓W的加工相關加工條件等的各種資訊。此外,觸控面板40亦被使用在用以輸入加工條件等各種資訊。如上所示,觸控面板40係作為用以輸入資訊的輸入手段來發揮功能,並且亦作為用以顯示所被輸入的資訊的顯示手段來發揮功能。In addition, a
此外,研削裝置1係在框體14的內部具備有控制研削裝置1的各構成要素的控制手段3。控制手段3係控制上述研削裝置1的各構成要素,而對晶圓W實施作業者所希望的加工。
此外,控制手段3係控制藉由搬入機構31所為之對吸盤平台30的保持面300的晶圓W的搬送處理。In addition, the grinding
以下說明作為研削裝置1之具特徵構成的搬入機構31。
如圖4所示,搬入機構31係具備有:具有吸引面82的吸引墊81、複數外周吸引保持部89、支持吸引墊81及外周吸引保持部89的板材83、支持板材83的支持部84、具有支持部84的臂部85、及使臂部85作升降的升降手段86。The following describes the
此外,搬入機構31係在板材83的下表面83a具備有以下表面83a的中心為中心而配設的圓環狀的第1環狀襯墊87,及在板材83的下表面83a中的第1環狀襯墊87的外側具備有配設成與第1環狀襯墊87呈同心圓狀的圓環狀的第2環狀襯墊88。第1環狀襯墊87係相當於環狀的按壓部之一例,將使中央部分接觸保持面300的晶圓W的外周部分,按壓至保持面300。In addition, the
吸引墊81的吸引面82係被使用在用以吸引保持晶圓W的背面Wb的中央部分。吸引墊81係被設在軸80的下端。吸引墊81係相當於中央吸引保持部之一例。The
軸80係以與吸引墊81的吸引面82呈垂直的方向升降自如地貫穿板材83的中央。因此,板材83係透過軸80,以與吸引墊81的吸引面82呈垂直的方向升降自如地支持吸引墊81。The
此外,軸80係在板材83的上方,亦以與吸引面82呈垂直的方向升降自如地貫穿臂部85。In addition, the
在軸80中穿過臂部85的上端係設有具有外徑比軸80為更粗的上端板93。藉由該上端板93,抑制軸80由臂部85朝下方脫落。An
此外,在軸80的大致中央部係設有具有外徑比軸80為更粗的固定板94。固定板94係在臂部85的下表面85a與板材83的上表面83b之間,被軸80貫穿。
此外,在固定板94的上表面與臂部85的下表面85a之間係配設有螺旋彈簧95。螺旋彈簧95係可以軸80延伸的方向,亦即與吸引墊81的吸引面82呈垂直的方向作伸縮。In addition, a fixing
在軸80的中央係設有將軸80的上端與吸引墊81相連的貫穿路80a。貫穿路80a係可透過上端板93的開口93a、與第2空氣閥191及第2吸引閥192的任一者,與第2空氣源(空氣供給源)91及第2吸引源92的任一者相連通。A through
在支持軸80的板材83係在其下表面83a配備有:複數外周吸引保持部89、圓環狀的第1環狀襯墊87、及配設成與第1環狀襯墊87呈同心圓狀的圓環狀的第2環狀襯墊88。The
外周吸引保持部89係以可接觸被保持在吸引墊81的晶圓W的外周部分的方式,設在板材83的下表面83a的複數位置。在本實施形態中,如圖4所示,外周吸引保持部89係配置在第1環狀襯墊87與第2環狀襯墊88之間。The peripheral
各外周吸引保持部89係在前端具備外周吸引墊89a,可透過第3空氣閥111及第3吸引閥112的任一者,與第3空氣源(空氣供給源)101及第3吸引源102的任一者相連通。各外周吸引保持部89係藉由與第3吸引源102相連通,可以外周吸引墊89a來吸引保持原被吸引保持在吸引墊81的吸引面82的晶圓W的背面Wb的外周部分。Each peripheral
此外,外周吸引保持部89係構成為若由下方受到力,即改變由板材83的下表面83a所突出的部分的長度。亦即,可使外周吸引墊89a接近板材83的下表面83a。此外,外周吸引保持部89亦可以上部可進入至板材83的內部的方式設在板材83。In addition, the peripheral
此外,在板材83的內部設有板材連通路96。板材連通路96係將板材83的下表面83a中的第1環狀襯墊87與第2環狀襯墊88之間,與板材83的上表面83b相連通。Furthermore, a
在板材83的下表面83a中的第1環狀襯墊87與第2環狀襯墊88之間係設有板材連通路96中的下表面83a側的開口部亦即下表面開口部96a。Between the first
此外,在板材83的上表面83b係設有板材連通路96中的上表面83b側的開口部亦即上表面開口部96b。Furthermore, an upper
臂部85係在其下表面85a具備有支持板材83的支持部84。支持部84係在其下端具備有具有直徑比支持部84為更粗的開閉閥97。該開閉閥97係被收容在板材83的板材連通路96被擴張且可以上下方向移動的空間96c內。The
開閉閥97係可在預定範圍以上下方向移動,另一方面,被安裝成不會由板材連通路96脫落。藉由該開閉閥97,支持部84係可支持板材83。The on-off
此外,開閉閥97係若對板材83以下方向移動時,係抵接於空間96c的底部,而將板材連通路96關閉(閉塞)。另一方面,開閉閥97係若對板材83以上方向移動時,係抵接於空間96c的上部,而將板材連通路96開放。In addition, when the opening and closing
具有具備有如上所示之開閉閥97的支持部84的臂部85係可將板材83以水平方向(與吸引墊81的吸引面82呈平行的方向)移動。此外,臂部85係可藉由升降手段86,連同板材83一起以上下方向移動。亦即,升降手段86係可將臂部85,連同板材83一起以與吸引墊81的吸引面82呈垂直的方向移動。
The
具有如上所示之構成的搬入機構31係如上所述,吸引保持被暫置在暫置平台61的晶圓W,且載置於吸盤平台30的保持面300。如上所示之搬入機構31的動作係藉由圖1所示之控制手段3予以控制。
The
以下說明藉由控制手段3的控制所致之搬入機構31的動作。
The following describes the operation of the
如圖4所示,控制手段3(參照圖1)係控制臂部85及升降手段86,而在暫置平台61的上方配置板材83。接著,控制手段3係使對位手段63退避至徑向外側。此外,控制手段3係控制升降手段86,使板材83下降,而使被支持在板材83的軸80的下端的吸引墊81中的吸引面82,抵接於晶圓W的中央。
As shown in FIG4 , the control means 3 (refer to FIG1 ) controls the
此外,控制手段3係將第2空氣閥191關閉,另一方面,將第2吸引閥192開放,而將吸引墊81的吸引面82與第2吸引源92相連通。藉此,如圖4所示,藉由搬入機構31的吸引墊81,吸引保持晶圓W。
In addition, the control means 3 closes the
接著,控制手段3(參照圖1)係如圖5所示,控制升降手段86,連同臂部85一起使板材83朝向暫置平台61的暫置保持面62下降而按壓。此外,控制手段3係將第3空氣閥111關閉,另一方面,將第3吸引閥112開放,而將外周吸引保持部89與第3吸引源102相連通。藉此,外周吸引保持部89吸引保持晶圓W的背面Wb的外周部分。
Next, the control means 3 (see FIG. 1 ) controls the lifting means 86 as shown in FIG. 5 , and together with the
如上所示,控制手段3係藉由將吸引墊81及外周吸引保持部89分別與第2吸引源92及第3吸引源102相連通,藉由吸引墊81及外周吸引保持部89,吸引保持暫置平台61上的晶圓W的中央部分及外周部分。
As shown above, the control means 3 connects the
之後,控制手段3(參照圖1)係控制升降手段86,連同臂部85一起使板材83上升。藉此,如圖6所示,晶圓W由暫置平台61背離。
Afterwards, the control means 3 (see FIG. 1 ) controls the lifting means 86 to raise the
在該狀態下,控制手段3係控制臂部85及升降手段86,在吸盤平台30的保持面300的上方配置板材83。接著,控制手段3(參照圖1)係如圖7所示,控制升降手段86,連同臂部85一起使板材83由保持面300的上方下降。藉此,控制手段3係使晶圓W的中央部分接觸保持面300。
In this state, the control means 3 controls the
此外,控制手段3(參照圖1)係如圖8所示,將第2吸引閥192關閉,並且將第2空氣閥191打開。此外,控制手段3係將第3吸引閥112關閉,並且將第3空氣閥111打開。藉此,吸引墊81與第2空氣源91相連通,並且外周吸引保持部89與第3空氣源101相連通。結果,吸引墊81及外周吸引保持部89失去吸引保持力。
In addition, the control means 3 (refer to FIG. 1 ) closes the
接著,控制手段3係控制升降手段86,連同臂部85一起使板材83朝向保持面300下降而按壓。
Next, the control means 3 controls the lifting means 86, together with the
藉此,如圖8所示,配設在固定板94的上表面與臂部85的下表面85a之間的螺旋彈簧95作收縮。
As a result, as shown in FIG8 , the
接著,設在板材83的下表面83a的外周吸引保持部89及第1環狀襯墊87接觸晶圓W的背面Wb上翹的外周部分,
並且第2環狀襯墊88接觸比保持面300中的晶圓W更為外側。
Next, the peripheral
如上所示,控制手段3係如圖8所示,藉由比保持面300中的晶圓W更為外側的部分300a、第1環狀襯墊87的外壁、板材83的下表面83a、及第2環狀襯墊88的內壁,形成環狀空間S。
As shown above, the control means 3 forms an annular space S by a
此外,此時,設在臂部85的支持部84的前端的開閉閥97抵接於板材83的板材連通路96中的空間96c的底部,而將板材連通路96關閉(閉塞)。藉此,上述環狀空間S即形成密室。
In addition, at this time, the on-off
此外,如圖8所示,保持面300係透過吸引路303及第4吸引閥302而連接於第4吸引源301。
In addition, as shown in FIG8 , the holding
接著,控制手段3係在環狀空間S成為密室的狀態下,打開第4吸引閥302,藉此將保持面300與第4吸引源301相連通。如上所述,保持面300的一部分(比晶圓W更為外側的部分300a)係形成環狀空間S的一部分。因此,藉由將保持面300與第4吸引源301相連通,保持面300的吸引力作用於環狀空間S,密室的環狀空間S內即成為負壓。
Next, the control means 3 opens the
結果,藉由大氣壓,板材83朝向保持面300被按壓。因此,藉由板材83的第1環狀襯墊87,晶圓W之上翹的外周部分被按壓在保持面300。藉此,晶圓W被吸附保持在保持面300。
As a result, the
此外,此時,外周吸引保持部89係由下方被推至晶圓W,外周吸引墊89a接近板材83的下表面83a。
In addition, at this time, the peripheral
在晶圓W被吸引保持在保持面300之後,控制手段3係關閉第2空氣閥191及第3空氣閥111。此外,控制手段3係控制升降手段86而使臂部85上升。藉此,設在臂部85的支持部84的前端的開閉閥97抵接於板材83的板材連通路96中的空間96c的上部,而將板材連通路96開放。藉此,環狀空間S的密室被破壞,環狀空間S被大氣開放。
After the wafer W is attracted and held on the holding
其中,以開閉閥97在空間96c內以上方向移動,藉此將板材連通路96開放的構成而言,如圖8、圖9、及將開閉閥97的近傍放大顯示的圖10所示,具備開閉閥97遠離空間96c的底部時,將空間96c與板材83的上表面83b相連接的板材連接路97a。或者,如圖11、圖12、及將開閉閥97的近傍放大顯示的圖13所示,開閉閥97遠離空間96c的底部而開閉閥97接觸到空間96c的上部時,以板材連通路96被開放的方式,具備被配設在開閉閥97的內部,且將開閉閥97的上下表面相連接的閥連接路97b。
Among them, with regard to the structure in which the opening and closing
之後,控制手段3(參照圖1)係控制升降手段86,使臂部85更加上升。藉此,如圖9所示,被配設在固定板94的上表面與臂部85的下表面85a之間的螺旋彈簧95伸長。
Afterwards, the control means 3 (see FIG. 1 ) controls the lifting means 86 to further raise the
接著,吸引墊81的吸引面82、及被設在板材83的下表面83a的外周吸引保持部89及第1環狀襯墊87遠離晶圓W的背面Wb。此外,第2環狀襯墊88遠離保持面300。
Then, the
之後,被吸附保持在吸盤平台30的保持面300的晶圓W藉由研削手段7的研削砥石741被研削。
Afterwards, the wafer W held by suction on the holding
如以上所示,在研削裝置1(參照圖1)中,將
暫置平台61上的晶圓W藉由搬入機構31搬送至吸盤平台30時,藉由吸引墊81保持晶圓W的中央,並且藉由複數外周吸引保持部89保持晶圓W的外周部分。藉此,可抑制晶圓W的外周部分的下垂,且堅固地保持晶圓W。
As shown above, in the grinding device 1 (refer to FIG. 1 ), when the wafer W on the
因此,即使晶圓W彎曲,亦可良好地保持暫置平台61上的晶圓W,且適當地搬送至吸盤平台30的保持面300。因此,在研削裝置1中,由於適當地搬送晶圓W,因此不需要對晶圓W實施用以抑制彎曲的加工。結果,可縮短晶圓W的加工時間。
Therefore, even if the wafer W is bent, the wafer W on the
此外,在研削裝置1中,控制手段3藉由保持面300中比晶圓W更為外側的部分300a、第1環狀襯墊87的外壁、板材83的下表面83a、及第2環狀襯墊88的內壁,形成密室的環狀空間S。此外,控制手段3藉由使用保持面300的吸引力而將環狀空間S形成為負壓,藉由大氣壓,將板材83朝向保持面300按壓,且藉由第1環狀襯墊87,將晶圓W的外周部分按壓在保持面300。
In addition, in the grinding
如上所示,在研削裝置1中,利用保持面300的吸引力及大氣壓,將晶圓W的外周部分按壓在保持面300。藉此,可一邊抑制裝置的大型化及重量化,一邊以低成本輕易提高將晶圓W按壓在保持面300的按壓力。
As shown above, in the grinding
此外,在研削裝置1中,由於利用保持面300的吸引力及大氣壓,因此即使在配合研削手段7(參照圖1)而改變保持面300的傾斜的情形下,亦可仿照保持面300來推壓晶圓W。因此,可藉由保持面300而輕易地吸引保持晶圓W。
In addition, in the grinding
其中,在本實施形態中,機器人155係將藉由旋轉器洗淨單元26被洗淨的晶圓W搬入至第2匣盒152a。亦可機器人155構成為將藉由旋轉器洗淨單元26被洗淨的晶圓W,搬送至配設在研削裝置1之橫向的貼膜機(Tape Mounter,未圖示),來取代之。
Among them, in this embodiment, the
此外,在本實施形態中,板材83係在其下表面83a,以與第1環狀襯墊87為同心圓狀具備有第2環狀襯墊88。亦可板材83並未具備第2環狀襯墊88,來取代之。此時,第1環狀襯墊87並未利用大氣壓,藉由從臂部85及升降手段86被傳達之力,將晶圓W的外周部分按壓在保持面300。因此,較佳為將傳達升降手段86之力的臂部85形成為高剛性。In addition, in the present embodiment, the
1:研削裝置 1: Grinding device
2:研削進給手段 2: Grinding feeding method
3:控制手段 3: Control measures
7:研削手段 7: Grinding methods
11:第1裝置基底 11: 1st device base
12:第2裝置基底 12: Second device base
13:支柱 13: Pillar
14:框體 14: Frame
20:Z軸滾珠螺桿 20: Z-axis ball screw
21:Z軸導軌 22:Z軸伺服馬達 23:Z軸移動平台 24:保持具 26:旋轉器洗淨單元 27:旋轉器平台 30:吸盤平台 31:搬入機構 36:搬出機構 38:厚度測定器 39:蓋件 39a:蛇腹蓋件 40:觸控面板 61:暫置平台 62:暫置保持面 63:對位手段 64:第1空氣閥 65:第1吸引閥 66:第1空氣源 67:第1吸引源 70:心軸 71:心軸殼體 72:馬達 73:輪座 74:研削輪 80:軸 80a:貫穿路 81:吸引墊 82:吸引面 83:板材 83a:下表面 83b:上表面 84:支持部 85:臂部 85a:下表面 86:升降手段 87:第1環狀襯墊 88:第2環狀襯墊 89:外周吸引保持部 89a:外周吸引墊 91:第2空氣源(空氣供給源) 92:第2吸引源 93:上端板 93a:開口 94:固定板 95:螺旋彈簧 96:連通路 96a:下表面開口部 96b:上表面開口部 96c:空間 97:開閉閥 97a:板材連接路 97b:閥連接路 101:第3空氣源(空氣供給源) 102:第3吸引源 111:第3空氣閥 112:第3吸引閥 151:第1匣盒載台 152:第2匣盒載台 151a:第1匣盒 152a:第2匣盒 155:機器人 191:第2空氣閥 192:第2吸引閥 300:保持面 300a:比晶圓W更為外側的部分 301:第4吸引源 302:第4吸引閥 303:吸引路 740:輪基台(環狀基台) 741:研削砥石 D:元件 L:分割預定線 S:環狀空間 T:保護膠帶 W:晶圓 Wa:表面 Wb:背面21: Z-axis guide rail 22: Z-axis servo motor 23: Z-axis moving platform 24: Holder 26: Rotator cleaning unit 27: Rotator platform 30: Suction cup platform 31: Loading mechanism 36: Unloading mechanism 38: Thickness gauge 39: Cover 39a: Bellows cover 40: Touch panel 61: Temporary platform 62: Temporary holding surface 63: Alignment means 64: First air valve 65: First suction valve 66: First air source 67: First suction Source 70: spindle 71: spindle housing 72: motor 73: wheel seat 74: grinding wheel 80: shaft 80a: through-path 81: suction pad 82: suction surface 83: plate 83a: lower surface 83b: upper surface 84: support part 85: arm part 85a: lower surface 86: lifting means 87: first annular pad 88: second annular pad 89: peripheral suction holding part 89a: peripheral suction pad 91: second air source (air supply source ) 92: Second suction source 93: Upper end plate 93a: Opening 94: Fixed plate 95: Coil spring 96: Connection path 96a: Lower surface opening 96b: Upper surface opening 96c: Space 97: On-off valve 97a: Plate connection path 97b: Valve connection path 101: Third air source (air supply source) 102: Third suction source 111: Third air valve 112: Third suction valve 151: First cassette carrier 152: Second cassette carrier 151a: 1st cassette 152a: 2nd cassette 155: robot 191: 2nd air valve 192: 2nd suction valve 300: holding surface 300a: part outside the wafer W 301: 4th suction source 302: 4th suction valve 303: suction path 740: wheel base (ring base) 741: grinding stone D: component L: splitting predetermined line S: ring space T: protective tape W: wafer Wa: surface Wb: back
[圖1]係顯示研削裝置的構成的斜視圖。 [圖2]係顯示晶圓的構成的斜視圖。 [圖3]係顯示暫置平台的構成的說明圖。 [圖4]係顯示搬入機構的構成的說明圖。 [圖5]係顯示藉由吸引墊及外周吸引保持部保持晶圓的狀態的說明圖。 [圖6]係顯示晶圓由暫置平台背離的狀態的說明圖。 [圖7]係顯示在吸盤平台的保持面載置有晶圓的狀態的說明圖。 [圖8]係顯示藉由保持面來吸附保持晶圓的狀態的說明圖。 [圖9]係顯示藉由保持面來吸附保持晶圓之後,臂部被上升而板材遠離吸盤平台的狀態的說明圖。 [圖10]係放大顯示開閉閥的近傍的說明圖。 [圖11]係顯示用以藉由開閉閥來開閉板材連通路的其他構成的說明圖。 [圖12]係顯示用以藉由開閉閥來開閉板材連通路的其他構成的說明圖。 [圖13]係放大顯示開閉閥的近傍的說明圖。[FIG. 1] is an oblique view showing the structure of the grinding device. [FIG. 2] is an oblique view showing the structure of the wafer. [FIG. 3] is an explanatory view showing the structure of the temporary platform. [FIG. 4] is an explanatory view showing the structure of the loading mechanism. [FIG. 5] is an explanatory view showing the state of the wafer being held by the suction pad and the peripheral suction holding portion. [FIG. 6] is an explanatory view showing the state of the wafer being separated from the temporary platform. [FIG. 7] is an explanatory view showing the state of the wafer being placed on the holding surface of the suction pad platform. [FIG. 8] is an explanatory view showing the state of the wafer being held by suction by the holding surface. [FIG. 9] is an explanatory view showing the state of the arm being raised and the plate being separated from the suction pad platform after the wafer is held by suction by the holding surface. [Fig. 10] is an explanatory diagram showing an enlarged view of the vicinity of the on-off valve. [Fig. 11] is an explanatory diagram showing other structures for opening and closing the plate connecting passage by the on-off valve. [Fig. 12] is an explanatory diagram showing other structures for opening and closing the plate connecting passage by the on-off valve. [Fig. 13] is an explanatory diagram showing an enlarged view of the vicinity of the on-off valve.
31:搬入機構 31: Move into the institution
61:暫置平台 61: Temporary platform
62:暫置保持面 62: Temporarily hold the surface
63:對位手段 63: Countermeasures
81:吸引墊 81: Attraction pad
82:吸引面 82: Attraction surface
83:板材 83: Board
84:支持部 84: Support Department
85:臂部 85: Arms
86:升降手段 86: Lifting means
89:外周吸引保持部 89: Peripheral suction and holding part
91:第2空氣源(空氣供給源) 91: Second air source (air supply source)
92:第2吸引源 92: Second source of attraction
93:上端板 93: Upper end plate
96:連通路 96: Liantong Road
97:開閉閥 97: Open/Close Valve
101:第3空氣源(空氣供給源) 101: Third air source (air supply source)
102:第3吸引源 102: The third source of attraction
111:第3空氣閥 111: Air valve No. 3
112:第3吸引閥 112: No. 3 suction valve
191:第2空氣閥 191: Second air valve
192:第2吸引閥 192: Second suction valve
T:保護膠帶 T: Protective tape
W:晶圓 W: Wafer
Wb:背面 Wb:Back
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| Application Number | Priority Date | Filing Date | Title |
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| JP2019092862A JP7256685B2 (en) | 2019-05-16 | 2019-05-16 | Grinding equipment |
| JP2019-092862 | 2019-05-16 |
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| TW202044365A TW202044365A (en) | 2020-12-01 |
| TWI863991B true TWI863991B (en) | 2024-12-01 |
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| KR (1) | KR102710148B1 (en) |
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| CN111941213A (en) | 2020-11-17 |
| KR20200132692A (en) | 2020-11-25 |
| JP7256685B2 (en) | 2023-04-12 |
| KR102710148B1 (en) | 2024-09-25 |
| JP2020188195A (en) | 2020-11-19 |
| TW202044365A (en) | 2020-12-01 |
| CN111941213B (en) | 2024-02-13 |
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