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TWI862560B - Inspection substrate and inspection method - Google Patents

Inspection substrate and inspection method Download PDF

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Publication number
TWI862560B
TWI862560B TW109109695A TW109109695A TWI862560B TW I862560 B TWI862560 B TW I862560B TW 109109695 A TW109109695 A TW 109109695A TW 109109695 A TW109109695 A TW 109109695A TW I862560 B TWI862560 B TW I862560B
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inspection
wirings
cutting path
laser beam
substrate
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TW109109695A
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TW202036694A (en
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古田健次
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日商迪思科股份有限公司
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    • H10P74/27
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03Observing, e.g. monitoring, the workpiece
    • B23K26/032Observing, e.g. monitoring, the workpiece using optical means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/53Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70Auxiliary operations or equipment
    • B23K26/702Auxiliary equipment
    • B23K26/705Beam measuring device
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70Auxiliary operations or equipment
    • B23K26/702Auxiliary equipment
    • B23K26/707Auxiliary equipment for monitoring laser beam transmission optics
    • H10P54/00
    • H10P74/203
    • H10P74/273
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Dicing (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Laser Beam Processing (AREA)

Abstract

[課題] 為了定量地評估漏光會到達的區域,提供一種檢查用基板,用於檢查雷射光束的漏光。[解決手段] 提供一種檢查用基板,用於檢查雷射光束的漏光,該檢查用基板具備:一側的面,被照射具有穿透檢查用基板之波長的雷射光束;另一側的面,與一側的面為相反側;切割道,被設定於另一側的面;多條第1檢查用配線,在另一側的面上每條沿著切割道並被配置於從切割道起不同的距離;及多個第1電極墊,在另一側的面上於多條第1檢查用配線的每條設置兩個以上,並於多條第1檢查用配線的每條中在沿著切割道的方向上分開配置。[Topic] To quantitatively evaluate the area where light leakage may reach, an inspection substrate is provided for inspecting light leakage of a laser beam. [Solution] An inspection substrate is provided for inspecting light leakage of a laser beam, the inspection substrate comprising: a surface on one side, irradiated with a laser beam having a wavelength that penetrates the inspection substrate; a surface on the other side, opposite to the surface on the one side; a cutting path set on the surface on the other side; a plurality of first inspection wirings, each along the cutting path and arranged at different distances from the cutting path on the surface on the other side; and a plurality of first electrode pads, two or more of which are provided on each of the plurality of first inspection wirings on the surface on the other side, and separately arranged in the direction along the cutting path in each of the plurality of first inspection wirings.

Description

檢查用基板以及檢查方法Inspection substrate and inspection method

本發明是關於一種檢查用基板,用於在以雷射光束加工被加工物時檢查雷射光束之漏光,以及一種檢查方法,使用該檢查用基板來檢查雷射光束的漏光。The present invention relates to an inspection substrate for inspecting light leakage of laser beam when processing a workpiece with laser beam, and an inspection method for inspecting light leakage of laser beam using the inspection substrate.

已知一種圓盤狀的晶圓,在藉由配置成格子狀的多條分割預定線(即切割道)而劃分之各區域形成有半導體元件。為了沿著切割道分割晶圓並製造半導體晶片,例如使用雷射加工裝置。A disk-shaped wafer is known in which semiconductor elements are formed in each region divided by a plurality of predetermined dividing lines (i.e., scribe lines) arranged in a grid shape. In order to divide the wafer along the scribe lines and manufacture semiconductor chips, for example, a laser processing device is used.

例如,使用雷射加工裝置,以將對晶圓具有穿透性之波長的脈衝狀雷射光束的聚光點定位在晶圓內部的方式,沿著晶圓正面側的切割道並從晶圓背面側照射雷射光束。藉此,在聚光點附近產生多光子吸收,且沿著切割道形成已降低機械強度的改質層。其後,藉由對晶圓施加外力,而以改質層為起點沿著切割道分割晶圓。For example, a laser processing device is used to position the focal point of a pulsed laser beam of a wavelength that can penetrate the wafer inside the wafer, and the laser beam is irradiated from the back side of the wafer along the scribe line on the front side of the wafer. As a result, multiphoton absorption occurs near the focal point, and a modified layer with reduced mechanical strength is formed along the scribe line. Thereafter, an external force is applied to the wafer, and the wafer is divided along the scribe line starting from the modified layer.

在形成改質層時,通常在晶圓不同的深度位置形成多個改質層。例如,將聚光點的深度位置定位於晶圓正面側之預定深度的位置,沿著1條切割道照射雷射光束。藉由沿著切割道照射1次雷射光束(即第1行程之雷射光束的照射),形成第1層的改質層。When forming a modified layer, multiple modified layers are usually formed at different depths of the wafer. For example, the depth position of the focal point is positioned at a predetermined depth on the front side of the wafer, and a laser beam is irradiated along one cutting path. By irradiating the laser beam once along the cutting path (i.e., irradiation of the laser beam in the first pass), the first modified layer is formed.

之後,在使聚光點的深度位置往背面側移動預定距離後,再次藉由沿著相同切割道照射1次雷射光束(即第2行程之雷射光束的照射),形成第2層的改質層。同樣地,重複進行使聚光點的深度位置往背面側移動預定距離及雷射光束之照射,而在晶圓的內部形成多個(例如2到5個)改質層。After that, after the depth position of the focal point is moved toward the back side by a predetermined distance, the laser beam is irradiated once again along the same dicing path (i.e., the irradiation of the laser beam in the second pass) to form the second modified layer. Similarly, the depth position of the focal point is moved toward the back side by a predetermined distance and the irradiation of the laser beam is repeated to form multiple (e.g., 2 to 5) modified layers inside the wafer.

在形成改質層時,雖然雷射光束主要在定位於預定深度的聚光點被晶圓吸收,但會有雷射光束的一部分由位於比預定深度的位置更正面側的改質層或從改質層延伸之裂痕等而折射或反射的情況。When forming the modified layer, although the laser beam is mainly absorbed by the wafer at the focal point located at a predetermined depth, a portion of the laser beam may be refracted or reflected by the modified layer located on the front side of the modified layer or by cracks extending from the modified layer.

假設,雷射光束的一部分經由折射或反射而成為漏光(亦即超出作為目標之照射區域(即切割道)而到達半導體元件的光),則漏光會到達藉由多條切割道而劃分之晶圓的正面側各區域所形成的半導體元件。此情況下,會有因為漏光而損傷半導體元件的疑慮。因此,以漏光不會到達半導體元件的方式,選定雷射光束的照射條件(即雷射加工條件)是必要的。Assuming that a portion of the laser beam becomes leakage light (i.e., light that reaches the semiconductor device beyond the targeted irradiation area (i.e., the scribe line)) through refraction or reflection, the leakage light will reach the semiconductor device formed by each area on the front side of the wafer divided by multiple scribe lines. In this case, there is a concern that the semiconductor device will be damaged by the leakage light. Therefore, it is necessary to select the irradiation conditions of the laser beam (i.e., the laser processing conditions) in such a way that the leakage light does not reach the semiconductor device.

於是,已知有一種方法,在晶圓的正面側形成以錫(Sn)或油性墨水等所形成的被覆層後,從晶圓的背面側照射雷射光束,以確認到達晶圓正面側的漏光(例如參照專利文獻1) [習知技術文獻] [專利文獻]Therefore, there is a known method of forming a coating layer made of tin (Sn) or oil-based ink on the front side of a wafer, and then irradiating a laser beam from the back side of the wafer to confirm the light leakage reaching the front side of the wafer (for example, refer to Patent Document 1) [Known Technical Document] [Patent Document]

[專利文獻1] 日本特開2017-216413號公報[Patent Document 1] Japanese Patent Application Publication No. 2017-216413

[發明所欲解決的課題] 然而,在專利文獻1記載的方法中,僅是藉由到達被覆層中的雷射光束觀察已變質之區域,而不存在定量地評估漏光到達之區域的方法。[Problem to be solved by the invention] However, in the method described in Patent Document 1, the deteriorated area is only observed by the laser beam reaching the coating layer, and there is no method for quantitatively evaluating the area reached by the leakage light.

本發明是鑑於此問題點而完成的發明,目的在於為了定量地評估漏光會到達之區域,提供一種檢查用基板,用於檢查雷射光束的漏光。The present invention is made in view of this problem, and its purpose is to provide an inspection substrate for inspecting the light leakage of a laser beam in order to quantitatively evaluate the area where the light leakage may reach.

[解決課題的技術手段] 根據本發明的一態樣,提供一種檢查用基板,用於檢查雷射光束的漏光,該檢查用基板具備:一側的面,被照射具有穿透該檢查用基板之波長的該雷射光束;另一側的面,與該一側的面為相反側;切割道,被設定於該另一側的面;多條第1檢查用配線,在該另一側的面上每條沿著該切割道並被配置於從該切割道起不同的距離;及多個第1電極墊,在該另一側的面上於該多條第1檢查用配線的每條設置兩個以上,並於該多條第1檢查用配線的每條中在沿著該切割道的方向上分開配置。較佳為,該檢查用基板進一步具備多條第2檢查用配線,其在該另一側的面上沿著該切割道與該多條第1檢查用配線分開,並且,其每條沿著該切割道而被配置於從該切割道起不同的距離。[Technical means for solving the problem] According to one aspect of the present invention, there is provided an inspection substrate for inspecting light leakage of a laser beam, the inspection substrate comprising: a surface on one side, irradiated with the laser beam having a wavelength that penetrates the inspection substrate; a surface on the other side, opposite to the surface on the one side; a cutting path set on the surface on the other side; a plurality of first inspection wirings, each along the cutting path and arranged at different distances from the cutting path on the surface on the other side; and a plurality of first electrode pads, two or more of which are provided on each of the plurality of first inspection wirings on the surface on the other side, and separately arranged in the direction along the cutting path in each of the plurality of first inspection wirings. Preferably, the inspection substrate further includes a plurality of second inspection wirings which are separated from the plurality of first inspection wirings along the scribe line on the surface of the other side, and each of the second inspection wirings is arranged at a different distance from the scribe line along the scribe line.

根據本發明的另一態樣,提供一種檢查方法,使用檢查用基板檢查雷射光束的漏光,該檢查用基板具備:一側的面,被照射具有穿透該檢查用基板之波長的該雷射光束;另一側的面,與該一側的面為相反側;切割道,被設定於該另一側的面;多條第1檢查用配線,在該另一側的面上每條沿著該切割道並被配置於從該切割道起不同的距離;及多個第1電極墊,在該另一側的面上於該多條第1檢查用配線的每條設置兩個以上,並於該多條第1檢查用配線的每條中在沿著該切割道的方向上分開配置。該檢查方法具備:保持步驟,以卡盤台保持該檢查用基板之該另一側的面側;雷射加工步驟,從該檢查用基板的該一側的面側,沿著該切割道照射該雷射光束,而在該檢查用基板的內部沿著該切割道形成改質層;及漏光確認步驟,在該雷射加工步驟之後,使探測器接觸該多條第1檢查用配線的每條上所設置的該多個第1電極墊,藉由確認該多條第1檢查用配線的斷線來確認該漏光的有無。According to another aspect of the present invention, an inspection method is provided, which uses an inspection substrate to inspect light leakage of a laser beam, the inspection substrate comprising: a surface on one side, which is irradiated with the laser beam having a wavelength that penetrates the inspection substrate; a surface on the other side, which is opposite to the surface on the one side; a cutting path, which is set on the surface on the other side; a plurality of first inspection wirings, each of which is along the cutting path and is arranged at a different distance from the cutting path on the surface on the other side; and a plurality of first electrode pads, which are provided on the surface on the other side for each of the plurality of first inspection wirings and are separately arranged in the direction along the cutting path in each of the plurality of first inspection wirings. The inspection method comprises: a holding step of holding the other side surface of the inspection substrate with a chuck table; a laser processing step of irradiating the laser beam from the one side surface of the inspection substrate along the cutting path to form a modified layer along the cutting path inside the inspection substrate; and a light leakage confirmation step of contacting a detector with the multiple first electrode pads provided on each of the multiple first inspection wirings after the laser processing step to confirm the presence or absence of light leakage by confirming whether the multiple first inspection wirings are broken.

[發明功效] 根據本發明之一態樣的檢查用基板,在照射雷射光束之一側的面及相反側之另一側的面具有多條第1檢查用配線及多個第1電極墊。多條第1檢查用配線的每條是沿著切割道配置在從切割道起不同的距離。此外,多個第1電極墊是於多條第1檢查用配線的每條設置兩個以上,並於多條第1檢查用配線的每條中在沿著切割道的方向上分開配置。[Effect of the invention] According to an inspection substrate of one aspect of the present invention, a plurality of first inspection wirings and a plurality of first electrode pads are provided on a surface on one side irradiated with a laser beam and on a surface on the other side opposite to the laser beam. Each of the plurality of first inspection wirings is arranged at a different distance from the cutting path along the cutting path. In addition, two or more of the plurality of first electrode pads are provided for each of the plurality of first inspection wirings, and are separately arranged in the direction along the cutting path in each of the plurality of first inspection wirings.

在沿著切割道照射雷射光束之後,例如,藉由使探測器(即,探針)接觸兩個第1電極墊之各個並通電,進行第1檢查用配線的檢查。藉此,因為能在每條配置於從切割道起不同距離的位置上的多條第1檢查用配線中,確定在哪個位置的第1檢查用配線接收到漏光而斷線,所以能夠定量地評估漏光的影響。After irradiating the laser beam along the dicing street, for example, the first inspection wiring is inspected by bringing a detector (i.e., a probe) into contact with each of the two first electrode pads and energizing them. In this way, since it is possible to determine at which position of the first inspection wiring, among a plurality of first inspection wirings arranged at different distances from the dicing street, the first inspection wiring receives leakage light and is disconnected, the influence of leakage light can be quantitatively evaluated.

參照隨附圖式,說明本發明之一態樣的實施方式。圖1為框架單元1的立體圖。框架單元1具有用於檢查漏光的檢查用基板11。檢查用基板11為圓盤狀,檢查用基板11具有圓形的正面(另一側的面)11a及背面(一側的面)11b,且具有500μm到1000μm左右的厚度。Referring to the accompanying drawings, an implementation method of one aspect of the present invention is described. FIG1 is a perspective view of a frame unit 1. The frame unit 1 has an inspection substrate 11 for inspecting light leakage. The inspection substrate 11 is disc-shaped, and has a circular front surface (surface on the other side) 11a and a back surface (surface on one side) 11b, and has a thickness of about 500μm to 1000μm.

檢查用基板11為以矽(Si)基板形成的晶圓。但是,檢查用基板11並不限定於矽,也可以砷化鎵(GaAs)、碳化矽(SiC)及氮化鎵(GaN)等的半導體材料、藍寶石或各種玻璃等所形成。The inspection substrate 11 is a wafer formed of a silicon (Si) substrate, but the inspection substrate 11 is not limited to silicon, and may be formed of semiconductor materials such as gallium arsenide (GaAs), silicon carbide (SiC), and gallium nitride (GaN), sapphire, or various glasses.

以互相交叉的方式,在檢查用基板11的正面11a側設定有多條切割道13。各切割道13被設定為與第1方向A或是與正交於第1方向A的第2方向B平行。A plurality of scribe lines 13 are provided on the front surface 11a of the inspection substrate 11 so as to intersect each other. Each scribe line 13 is provided parallel to the first direction A or the second direction B perpendicular to the first direction A.

在藉由多條切割道13所劃分的多個區域之各個中,設置有元件15a及檢查用區域15b。另外,在本說明書中,將設置有元件15a及檢查用區域15b的區域稱為元件區域15A。Devices 15a and inspection regions 15b are provided in each of the plurality of regions divided by the plurality of dicing streets 13. In addition, in this specification, the region where the devices 15a and inspection regions 15b are provided is referred to as a device region 15A.

例如,多個元件15a是沿著第1方向A而配置成一列,以在第2方向B上相鄰於此元件15a之列的方式,沿著第1方向A將多個檢查用區域15b配置成一列。如此,各自配置成一列的多個元件15a及多個檢查用區域15b從元件區域15A在第2方向B的一端交互配置至另一端。For example, a plurality of elements 15a are arranged in a row along the first direction A, and a plurality of inspection regions 15b are arranged in a row along the first direction A so as to be adjacent to the row of the elements 15a in the second direction B. In this way, the plurality of elements 15a and the plurality of inspection regions 15b, each arranged in a row, are alternately arranged from one end of the element region 15A in the second direction B to the other end.

然而,元件15a及檢查用區域15b的配置不限定於上述例子。多個元件15a及多個檢查用區域15b也可沿著第2方向B配置成一列,並從元件區域15A在第1方向A的一端交互配置至另一端。However, the arrangement of the element 15a and the inspection region 15b is not limited to the above example. A plurality of elements 15a and a plurality of inspection regions 15b may be arranged in a row along the second direction B and alternately arranged from one end of the element region 15A in the first direction A to the other end.

此外,多個元件15a及多個檢查用區域15b也可在第1方向A及第2方向B交互地(亦即,棋盤狀地)配置。另外,在元件區域15A也可不設置元件15a。在不設置元件15a的情況下,於藉由多條切割道13而劃分的各區域設置檢查用區域15b。In addition, the plurality of components 15a and the plurality of inspection regions 15b may be arranged alternately (i.e., in a checkerboard pattern) in the first direction A and the second direction B. In addition, the component 15a may not be provided in the component region 15A. When the component 15a is not provided, the inspection region 15b is provided in each region divided by the plurality of dicing streets 13.

接著,詳細地說明檢查用區域15b。圖2為將第1實施方式之元件區域15A局部地放大表示的俯視圖。另外,在圖2中,為了方便,將沿著第1方向A的切割道13標示為切割道13-1,將沿著第2方向B的切割道13標示為切割道13-2。Next, the inspection area 15b is described in detail. Fig. 2 is a top view showing a part of the device area 15A of the first embodiment in an enlarged manner. In addition, in Fig. 2, for convenience, the cutting path 13 along the first direction A is marked as a cutting path 13-1, and the cutting path 13 along the second direction B is marked as a cutting path 13-2.

在圖2中表示沿著第1方向A配置的兩個元件15a,在第2方向B相鄰於兩個元件15a且沿著第1方向A配置的兩個檢查用區域15b,以及在第2方向B相鄰於兩個檢查用區域15b且沿著第1方向A配置的再兩個元件15a。2 shows two elements 15a arranged along the first direction A, two inspection regions 15b adjacent to the two elements 15a in the second direction B and arranged along the first direction A, and two more elements 15a adjacent to the two inspection regions 15b in the second direction B and arranged along the first direction A.

檢查用區域15b具有配置於正面(另一側的面)11a側的多條第1檢查用配線23a。每條第1檢查用配線23a是沿著切割道13-2而配置。每條第1檢查用配線23a是以導電性材料(例如錫(Sn))所形成的薄膜狀的配線層。The inspection area 15b has a plurality of first inspection wirings 23a disposed on the front surface (the other side) 11a. Each first inspection wiring 23a is disposed along the dicing street 13-2. Each first inspection wiring 23a is a thin film wiring layer formed of a conductive material (eg, tin (Sn)).

每條第1檢查用配線23a具有藉由預定能量的雷射光束而斷線的線寬及厚度。因此,每條第1檢查用配線23a可藉由預定能量之雷射光束的漏光而斷線。Each of the first inspection wirings 23a has a line width and thickness that can be disconnected by a laser beam of predetermined energy. Therefore, each of the first inspection wirings 23a can be disconnected by leakage of a laser beam of predetermined energy.

例如,每條第1檢查用配線23a具有10nm以上5μm以下的線寬,且具有相當於設置在元件15a之積層配線的1層的厚度(例如10nm以上1μm以下的厚度)。For example, each first inspection wiring 23a has a line width of 10 nm to 5 μm, and has a thickness equivalent to one layer of build-up wiring provided in the element 15a (eg, a thickness of 10 nm to 1 μm).

多條第1檢查用配線23a(23a-1、23a-2、23a-3、23a-4、23a-5)的每條是配置在從切割道13-2起不同距離的位置。第1檢查用配線23a-1鄰接切割道13-2。Each of the plurality of first inspection wirings 23a (23a-1, 23a-2, 23a-3, 23a-4, and 23a-5) is arranged at a different distance from the dicing street 13-2. The first inspection wiring 23a-1 is adjacent to the dicing street 13-2.

第1檢查用配線23a-2、23a-3、23a-4及23a-5是依照此順序,以逐漸遠離第1檢查用配線23a-1的方式配置。亦即,第1檢查用配線23a-2是離第1檢查用配線23a-1最近,第1檢查用配線23a-5是離第1檢查用配線23a-1最遠。The first inspection wiring 23a-2, 23a-3, 23a-4, and 23a-5 are arranged in this order so as to gradually move away from the first inspection wiring 23a-1. That is, the first inspection wiring 23a-2 is closest to the first inspection wiring 23a-1, and the first inspection wiring 23a-5 is farthest from the first inspection wiring 23a-1.

多條第1檢查用配線23a是以相鄰的每條線互相分開預定距離的方式配置。例如,每條第1檢查用配線23a互相分開與後述之大致呈正方形的第1電極墊25a之一邊相同程度的距離。The plurality of first inspection wirings 23a are arranged so that adjacent lines are separated from each other by a predetermined distance. For example, each first inspection wiring 23a is separated from each other by a distance equal to one side of a substantially square first electrode pad 25a described later.

第1檢查用配線23a是離切割道13-2愈遠,則其第2方向B的長度變得愈短。亦即,多條第1檢查用配線23a在第2方向B的長度是第1檢查用配線23a-1最長,第1檢查用配線23a-5最短。The farther the first inspection wiring 23a is from the dicing street 13-2, the shorter its length in the second direction B. That is, the length of the plurality of first inspection wirings 23a in the second direction B is such that the first inspection wiring 23a-1 is the longest and the first inspection wiring 23a-5 is the shortest.

每條第1檢查用配線23a是以其第2方向B之長度的中心位置沿著第1方向A排列成一列的方式配置。因此,第1檢查用配線23a-1的兩端位於比第1檢查用配線23a-2的兩端還外側的位置,第1檢查用配線23a-2的兩端位於比第1檢查用配線23a-3的兩端還外側的位置。Each of the first inspection wirings 23a is arranged in a row along the first direction A with the center position of the length in the second direction B. Therefore, both ends of the first inspection wiring 23a-1 are located outside both ends of the first inspection wiring 23a-2, and both ends of the first inspection wiring 23a-2 are located outside both ends of the first inspection wiring 23a-3.

此外,第1檢查用配線23a-3的兩端位於比第1檢查用配線23a-4的兩端還外側的位置,第1檢查用配線23a-4的兩端位於比第1檢查用配線23a-5的兩端還外側的位置。Furthermore, both ends of the first inspection wiring 23a-3 are located outside the both ends of the first inspection wiring 23a-4, and both ends of the first inspection wiring 23a-4 are located outside the both ends of the first inspection wiring 23a-5.

於每條第1檢查用配線23a中在沿著切割道13-2的方向分開的兩個位置(更具體而言,是長度方向的兩端)配置有第1電極墊25a。第1電極墊25a例如是數十μm之大致呈正方形的形狀,其一邊位於第1檢查用配線23a之長度方向的端部。The first electrode pads 25 a are arranged at two positions (more specifically, both ends in the longitudinal direction) separated in the direction of the scribe line 13 - 2 in each of the first inspection wirings 23 a. The first electrode pad 25a has, for example, a substantially square shape of several dozen μm, and one side thereof is located at an end of the first inspection wiring 23a in the longitudinal direction.

第1電極墊25a例如是以錫所形成的層,具有與第1檢查用配線相同的厚度。但是,第1電極墊25a的一邊比第1檢查用配線23a的線寬還寬。The first electrode pad 25a is a layer formed of, for example, tin, and has the same thickness as the first inspection wiring line. However, one side of the first electrode pad 25a is wider than the line width of the first inspection wiring line 23a.

在沿著切割道13-2與多條第1檢查用配線23a分開的位置配置有多條第2檢查用配線(23b-1、23b-2、23b-3、23b-4及23b-5)。多條第2檢查用配線23b的每條是配置在從切割道13-2起不同距離的位置。第2檢查用配線23b-1鄰接切割道13-2。A plurality of second inspection wirings (23b-1, 23b-2, 23b-3, 23b-4, and 23b-5) are arranged at positions separated from the plurality of first inspection wirings 23a along the dicing street 13-2. Each of the plurality of second inspection wirings 23b is arranged at a position with a different distance from the dicing street 13-2. The second inspection wiring 23b-1 is adjacent to the dicing street 13-2.

第2檢查用配線23b-2、23b-3、23b-4及23b-5是依照此順序,以逐漸遠離第2檢查用配線23b-1的方式配置。亦即,第2檢查用配線23b-2是離第2檢查用配線23b-1最近,第2檢查用配線23b-5是離第2檢查用配線23b-1最遠。多條第2檢查用配線23b也與多條第1檢查用配線23a相同,以相鄰的每條線互相分開預定距離的方式配置The second inspection wiring 23b-2, 23b-3, 23b-4 and 23b-5 are arranged in this order so as to gradually move away from the second inspection wiring 23b-1. That is, the second inspection wiring 23b-2 is closest to the second inspection wiring 23b-1, and the second inspection wiring 23b-5 is farthest from the second inspection wiring 23b-1. The plurality of second inspection wirings 23b are also arranged in a manner such that each adjacent line is separated from each other by a predetermined distance, similar to the plurality of first inspection wirings 23a.

第2檢查用配線23b也是離切割道13-2愈遠,則其第2方向B的長度變得愈短。此外,每條第2檢查用配線23b以其第2方向B之長度的中心位置沿著第1方向A排列成一列的方式配置。The second inspection wiring 23b also becomes shorter as it is farther from the dicing street 13-2. In addition, each second inspection wiring 23b is arranged in a row along the first direction A with the center position of the length in the second direction B thereof.

在第2檢查用配線23b每條的兩端也配置有第2電極墊25b,該第2電極墊25b具有與第1電極墊25a相同的形狀且以錫所形成。第2電極墊25b也以其一邊位於第2檢查用配線23b之長度方向的端部的方式配置。Second electrode pads 25b are also arranged at both ends of each of the second inspection wirings 23b. The second electrode pads 25b have the same shape as the first electrode pads 25a and are formed of tin. The second electrode pad 25b is also arranged so that one side thereof is located at the end of the second inspection wiring 23b in the longitudinal direction.

多條第1檢查用配線23a及多條第2檢查用配線23b是在第2方向B上互相分開之狀態下沿著切割道13-2而交互地配置。另外,為了盡可能將多條第1檢查用配線23a及多條第2檢查用配線23b密集地配置,在第2方向B相鄰的第1電極墊25a及第2電極墊25b僅分開例如比一個第1電極墊25a之一邊的長度還小的距離。The plurality of first inspection wirings 23a and the plurality of second inspection wirings 23b are alternately arranged along the dicing street 13-2 in a state of being separated from each other in the second direction B. In addition, in order to arrange the plurality of first inspection wirings 23a and the plurality of second inspection wirings 23b as densely as possible, the first electrode pad 25a and the second electrode pad 25b adjacent to each other in the second direction B are separated by a distance smaller than the length of one side of one first electrode pad 25a, for example.

若舉更具體的例子,在第2方向B相鄰的第1電極墊25a及第2電極墊25b僅分開與雷射光束之點徑相同的長度。如此一來,在檢查用區域15b之切割道13-2的附近,從第2方向B之一側(例如正方向側)密集地配置多條第1檢查用配線23a及多條第2檢查用配線23b至另一側(例如負方向側)。As a more specific example, the first electrode pad 25a and the second electrode pad 25b adjacent to each other in the second direction B are separated by a length equal to the spot diameter of the laser beam. Thus, in the vicinity of the dicing street 13-2 of the inspection area 15b, a plurality of first inspection wirings 23a and a plurality of second inspection wirings 23b are densely arranged from one side (e.g., the positive direction side) in the second direction B to the other side (e.g., the negative direction side).

同樣地,在一個檢查用區域15b中,在第1方向A上與切割道13-2位於相反側之切割道13-2的附近,也從第2方向B之一側密集地配置多條第1檢查用配線23a及多條第2檢查用配線23b至另一側。Similarly, in one inspection area 15b, near the scribe line 13-2 located on the opposite side to the scribe line 13-2 in the first direction A, a plurality of first inspection wirings 23a and a plurality of second inspection wirings 23b are densely arranged from one side in the second direction B to the other side.

此外,在同一個檢查用區域15b中,在位於第2方向B之一側的切割道13-1的附近,從第1方向A之一側交互且密集地配置多條第1檢查用配線23a及多條第2檢查用配線23b至另一側。Furthermore, in the same inspection region 15b, near the dicing street 13-1 located on one side in the second direction B, a plurality of first inspection wirings 23a and a plurality of second inspection wirings 23b are alternately and densely arranged from one side in the first direction A to the other side.

進一步,在同一個檢查用區域15b中,在位於第2方向B之另一側的切割道13-1的附近,從第1方向A之一側交互且密集地配置多條第1檢查用配線23a及多條第2檢查用配線23b至另一側。Furthermore, in the same inspection region 15b, near the dicing street 13-1 located on the other side in the second direction B, a plurality of first inspection wirings 23a and a plurality of second inspection wirings 23b are alternately and densely arranged from one side in the first direction A to the other side.

另外,在圖2中,將若干第1檢查用配線23a及多條第2檢查用配線23b僅以檢查用配線23表示,同樣地,將若干第1電極墊25a及第2電極墊25b僅以電極墊25表示。2 , the plurality of first inspection wirings 23 a and the plurality of second inspection wirings 23 b are represented simply as inspection wirings 23 , and similarly, the plurality of first electrode pads 25 a and the second electrode pads 25 b are represented simply as electrode pads 25 .

此處返回至圖1說明框架單元1。在檢查用基板11的正面側11a側,存在有如包圍元件區域15A之外周般,無設置元件15a也無設置檢查用區域15b的外周剩餘區域15B。1 to explain the frame unit 1. On the front side 11a of the inspection substrate 11, there is an outer peripheral surplus area 15B where neither the device 15a nor the inspection area 15b is provided, like the outer periphery surrounding the device area 15A.

在檢查用基板11之外周端部的局部設置有表示晶圓之晶體方向的缺口11c。另外,也可設置有取代缺口11c之定向平面等的其他記號。A notch 11c indicating the crystal orientation of the wafer is provided at a portion of the outer peripheral end of the inspection substrate 11. Alternatively, other marks such as an orientation flat surface may be provided instead of the notch 11c.

檢查用基板11例如是透過切割膠膜17而被固定於金屬製之環狀框架19的開口部。切割膠膜17是具有延展性之樹脂製的膜。切割膠膜17具有層積構造,層積構造為具有黏著性之樹脂製的黏著層(未圖示)及不具有黏著性之樹脂製的基材層(未圖示)。The inspection substrate 11 is fixed to the opening of the metal ring frame 19 through the dicing film 17, for example. The dicing film 17 is a film made of a ductile resin. The dicing film 17 has a layered structure, and the layered structure includes an adhesive layer (not shown) made of an adhesive resin and a base layer (not shown) made of a non-adhesive resin.

黏著層例如為紫外線硬化型的樹脂層,設置於基材層之一面的整面上。若對黏著層照射紫外線,則黏著層的黏著力降低,變得容易從檢查用基板11剝離切割膠膜17。The adhesive layer is, for example, a UV-curable resin layer, and is provided on the entire surface of one side of the base layer. When the adhesive layer is irradiated with UV rays, the adhesive force of the adhesive layer is reduced, and it becomes easy to peel the dicing film 17 from the inspection substrate 11.

環狀框架19具有直徑比檢查用基板11之直徑大的開口。在已於此開口配置檢查用基板11的狀態下,藉由將切割膠膜17的黏著層側貼附在檢查用基板11之正面11a側及環狀框架19之一面而形成框架單元1。The annular frame 19 has an opening with a diameter larger than that of the inspection substrate 11. With the inspection substrate 11 disposed in the opening, the frame unit 1 is formed by attaching the adhesive layer side of the dicing film 17 to the front surface 11a of the inspection substrate 11 and one surface of the annular frame 19.

接著,使用圖3、圖4、圖5(A)、圖5(B)及圖6說明檢查漏光的檢查方法。另外,圖6為表示檢查漏光的流程圖。在第1實施方式的檢查方法中,首先,以卡盤台12將框架單元1保持在雷射加工裝置10(保持步驟(S10))。圖3為框架單元1及雷射加工裝置10之局部剖面側視圖。Next, the inspection method for inspecting light leakage is described using FIG. 3, FIG. 4, FIG. 5 (A), FIG. 5 (B), and FIG. 6. In addition, FIG. 6 is a flow chart showing the inspection of light leakage. In the inspection method of the first embodiment, first, the frame unit 1 is held on the laser processing device 10 by the chuck table 12 (holding step (S10)). FIG. 3 is a partial cross-sectional side view of the frame unit 1 and the laser processing device 10.

雷射加工裝置10具有卡盤台12。在卡盤台12的表面側設置有以多孔陶瓷等材料所形成之圓盤狀的多孔板。多孔板與設置在卡盤台12之內部的流路(未圖示)連通且與噴射器等的吸引源(未圖示)連接。藉由吸引源產生的負壓,而在多孔板的表面(即保持面12a)產生吸引力。The laser processing device 10 has a chuck table 12. A disk-shaped porous plate formed of a material such as porous ceramic is provided on the surface side of the chuck table 12. The porous plate is connected to a flow path (not shown) provided inside the chuck table 12 and is connected to a suction source (not shown) such as an ejector. The negative pressure generated by the suction source generates suction force on the surface of the porous plate (i.e., the holding surface 12a).

於卡盤台12的外周側面固定有多個夾持單元14。例如,在以俯視觀看卡盤台12時,在時針之12點鐘方向、3點鐘方向、6點鐘方向、9點鐘方向的各位置配置有一個夾持單元14。A plurality of clamping units 14 are fixed to the outer peripheral side surface of the chuck table 12. For example, when the chuck table 12 is viewed from above, one clamping unit 14 is disposed at each of the 12 o'clock direction, the 3 o'clock direction, the 6 o'clock direction, and the 9 o'clock direction of the clock hand.

在卡盤台12的下方設置有X軸移動單元(未圖示)Y軸移動單元(未圖示)。X軸移動單元及Y軸移動單元各自具有滾珠螺桿機構,能夠使卡盤台12在X軸方向及Y軸方向上移動。另外,卡盤台12與馬達等之旋轉驅動源(未圖示)連結,可將與Z軸方向(垂直方向)大致平行的直線作為旋轉軸而旋轉。An X-axis moving unit (not shown) and a Y-axis moving unit (not shown) are provided below the chuck table 12. The X-axis moving unit and the Y-axis moving unit each have a ball screw mechanism, which can move the chuck table 12 in the X-axis direction and the Y-axis direction. In addition, the chuck table 12 is connected to a rotation drive source (not shown) such as a motor, and can rotate with a straight line roughly parallel to the Z-axis direction (vertical direction) as a rotation axis.

在卡盤台12的上方設置有構成雷射光束照射單元的加工頭16。具有穿透檢查用基板11之波長的脈衝狀雷射光束L從加工頭16朝向保持面12a呈大致垂直地照射。A processing head 16 constituting a laser beam irradiation unit is provided above the chuck stage 12. A pulsed laser beam L having a wavelength that penetrates the inspection substrate 11 is irradiated from the processing head 16 toward the holding surface 12a in a substantially vertical direction.

在保持步驟(S10)中,首先,以檢查用基板11的背面11b朝向上方的態樣,將框架單元1載置於保持面12a上。此狀態下,使吸引源運作並使負壓作用於保持面12a。In the holding step (S10), first, the frame unit 1 is placed on the holding surface 12a with the back surface 11b of the inspection substrate 11 facing upward. In this state, the suction source is operated to apply negative pressure to the holding surface 12a.

進一步,以夾持單元14固定環狀框架19的位置。藉此,位於與背面(一側的面)11b為相反側的正面(另一側的面)11a側被以卡盤台12透過切割膠膜17而保持。Furthermore, the position of the ring frame 19 is fixed by the clamping unit 14. Thus, the front surface (the other surface) 11a side located on the opposite side to the back surface (the one surface) 11b is held by the chuck table 12 through the dicing film 17.

接著,使用雷射加工裝置10,沿著檢查用基板11的切割道13對背面(一側的面)11b側照射雷射光束L(雷射加工步驟(S20))。首先,使旋轉驅動源運作,且以檢查用基板11之切割道13成為與X軸方向平行的方式調整卡盤台12的方向。Next, the laser processing device 10 is used to irradiate the back surface (one side) 11b side with a laser beam L along the cut line 13 of the inspection substrate 11 (laser processing step (S20)). First, the rotary drive source is operated, and the direction of the chuck table 12 is adjusted so that the cut line 13 of the inspection substrate 11 becomes parallel to the X-axis direction.

然後,以將加工頭16的下端位於一條切割道13之X軸方向的一方(例如-X方向)側之延長線上的方式,以X軸移動單元調整卡盤台12的位置。其後,以將雷射光束L的聚光點定位在檢查用基板11之內部的方式,從加工頭16對檢查用基板11的背面11b側照射雷射光束L。Then, the position of the chuck table 12 is adjusted by the X-axis moving unit so that the lower end of the processing head 16 is located on the extension line of one side (e.g., the −X direction) of the X-axis direction of one cutting street 13. Then, the laser beam L is irradiated from the processing head 16 to the back side 11b of the inspection substrate 11 so that the focal point of the laser beam L is positioned inside the inspection substrate 11.

之後,在從檢查用基板11之背面11b側照射的雷射光束L的聚光點定位在檢查用基板11之內部的狀態,使X軸移動單元運作,而使卡盤台12移動至X軸方向的另一方(例如+X方向)側。Thereafter, with the focal point of the laser beam L irradiated from the back surface 11b of the inspection substrate 11 positioned inside the inspection substrate 11, the X-axis moving unit is operated to move the chuck table 12 to the other side (eg, +X direction) of the X-axis direction.

一邊使加工頭16對卡盤台12相對地移動,一邊沿著切割道13照射雷射光束L(第1行程),藉此在檢查用基板11的內部沿著切割道13形成第1層的改質層11d。While the processing head 16 is moved relative to the chuck table 12 , the laser beam L is irradiated along the scribe line 13 (first pass), thereby forming a first modified layer 11 d along the scribe line 13 inside the inspection substrate 11 .

第1行程之後,在使聚光點的深度位置往背面11b側移動預定距離後,沿著相同的切割道13使卡盤台12往X軸方向的一方(例如-X方向)側移動(第2行程)。藉此,形成第2層的改質層11d。After the first pass, the depth position of the focal point is moved toward the back surface 11b by a predetermined distance, and then the chuck table 12 is moved toward one side (eg, the -X direction) in the X-axis direction along the same cutting path 13 (second pass). Thus, the second modified layer 11d is formed.

第2行程之後,在使聚光點的深度位置更往背面11b側移動預定距離後,沿著相同的切割道13使卡盤台12往X軸方向的另一方(例如+X方向)側移動(第3行程)。藉此,形成第3層的改質層11d。After the second pass, the depth position of the focal point is moved further toward the back surface 11b by a predetermined distance, and then the chuck table 12 is moved toward the other side (for example, the +X direction) in the X-axis direction along the same cutting path 13 (third pass). Thus, the third modified layer 11d is formed.

以同樣的方式進行,對相同的切割道13進行第4行程及第5行程之雷射光束L的照射,藉此形成第4層及第5層的改質層11d。之後,暫時停止雷射光束L的照射。雷射加工條件例如設定如下。In the same manner, the same scribe line 13 is irradiated with the laser beam L in the fourth and fifth passes, thereby forming the fourth and fifth modified layers 11d. Thereafter, the irradiation with the laser beam L is temporarily stopped. The laser processing conditions are set, for example, as follows.

雷射光束L的波長 :1342nm 脈衝的重複頻率     :90kHz 平均輸出                 :1.9W 點徑                         :10μm到20μm 加工進給速度         :700mm/sWavelength of laser beam L: 1342nm Pulse repetition frequency: 90kHz Average output: 1.9W Spot diameter: 10μm to 20μm Processing feed speed: 700mm/s

接著,將卡盤台12往Y軸方向分度進給預定的分度量,並將加工頭16的下端定位於與剛加工完之一條切割道13在Y軸方向上相鄰的另一條切割道13上。Next, the chuck table 12 is indexed and fed in the Y-axis direction by a predetermined indexing amount, and the lower end of the processing head 16 is positioned on another cutting path 13 adjacent to the cutting path 13 just processed in the Y-axis direction.

然後,沿著另一條切割道13,且同樣地從第1行程至第5行程為止照射雷射光束L。以此方式進行,沿著在一方向上平行的所有切割道13形成5層的改質層11d。Then, the laser beam L is irradiated from the first pass to the fifth pass along another scribe line 13. In this way, five modified layers 11d are formed along all scribe lines 13 parallel to each other in one direction.

之後,使卡盤台12旋轉90度,沿著在與一方向正交之另一方向上平行的所有切割道13,從第1行程至第5行程為止照射雷射光束L。藉此,沿著所有切割道13之每一條形成5層的改質層11d。另外,改質層11d的數目並不限定在5層。改質層11d的數目可為2層以上的預定層數。Thereafter, the chuck table 12 is rotated 90 degrees, and the laser beam L is irradiated from the first pass to the fifth pass along all the cutting paths 13 parallel to the other direction orthogonal to the one direction. Thus, five modified layers 11d are formed along each of all the cutting paths 13. In addition, the number of modified layers 11d is not limited to five. The number of modified layers 11d may be a predetermined number of two or more.

但是,在照射雷射光束L時,雷射光束L的一部分折射或反射,會有產生漏光D(參照圖4)(即超出作為目標之照射區域(切割道13)而到達元件15a的光) 的情況。However, when the laser beam L is irradiated, a part of the laser beam L is refracted or reflected, and leakage light D (see FIG. 4 ) (ie, light that exceeds the target irradiation area (dicing street 13 ) and reaches the element 15 a ) may be generated.

例如,在形成第2層的改成層11d時,由於從第1層的改質層11d朝向第2層的改質層11d所形成的裂痕11e等,雷射光束L的一部分會折射或反射而產生漏光D。For example, when the second modified layer 11d is formed, a portion of the laser beam L is refracted or reflected due to cracks 11e formed from the first modified layer 11d toward the second modified layer 11d, thereby generating leakage light D.

圖4為圖3之區域C的放大圖。在圖4中表示在形成第2層的改成層11d時產生的漏光D。若具有預定能量的漏光D超出切割道13-2且到達檢查用區域15b之第1檢查用配線23a等,則第1檢查用配線23a等會受到損傷,例如斷線。Fig. 4 is an enlarged view of the area C of Fig. 3. Fig. 4 shows the leakage light D generated when the second layer 11d is formed. If the leakage light D with a predetermined energy exceeds the cutting street 13-2 and reaches the first inspection wiring 23a and the like in the inspection area 15b, the first inspection wiring 23a and the like may be damaged, for example, broken.

於是,在雷射加工步驟(S20)之後,確認檢查用配線23的斷線(漏光確認步驟(S30))。為此,首先,在將黏貼替換用的膠膜(未圖示)貼付至檢查用基板11的背面(一側的面)11b後,對切割膠膜17照射紫外線而使黏著層的黏著力降低。更在此之後,使用未圖示的剝離裝置將切割膠膜17從檢查用基板11剝離。Therefore, after the laser processing step (S20), the disconnection of the inspection wiring 23 is confirmed (light leakage confirmation step (S30)). To this end, first, after the adhesive film (not shown) for pasting replacement is attached to the back surface (one side) 11b of the inspection substrate 11, the dicing adhesive film 17 is irradiated with ultraviolet light to reduce the adhesive force of the adhesive layer. After that, the dicing adhesive film 17 is peeled off from the inspection substrate 11 using a peeling device (not shown).

在漏光確認步驟(S30)中,使用晶圓探測器等的檢查用治具(未圖示)確認檢查用配線23的斷線。檢查用治具具有可接觸電極墊25的多個探測器(即,探針)。In the light leakage checking step ( S30 ), a disconnection of the inspection wiring 23 is checked using an inspection jig (not shown) such as a wafer prober. The inspection jig has a plurality of probes (ie, probes) that can contact the electrode pad 25 .

在漏光確認步驟(S30)中,例如,使檢查用治具的第1探測器接觸位於第1檢查用配線23a-1之一端的第1電極墊25a,並使第2探測器接觸位於第1檢查用配線23a-1之另一端的第1電極墊25a。在此狀態下,讓電流在第1探測器及第2探測器之間流通。In the light leakage checking step (S30), for example, the first probe of the inspection jig is brought into contact with the first electrode pad 25a at one end of the first inspection wiring 23a-1, and the second probe is brought into contact with the first electrode pad 25a at the other end of the first inspection wiring 23a-1. In this state, a current flows between the first probe and the second probe.

例如,在由於檢查用配線23的一部分接受到漏光D而變質,使得檢查用配線23的導電性顯著降低的情況下,在預定的測量範圍內可測量之電流不會在第1探測器及第2探測器之間流通。因此,可判斷此檢查用配線23已斷線。For example, if part of the inspection wiring 23 is deteriorated due to receiving the leakage light D, and the conductivity of the inspection wiring 23 is significantly reduced, the current measurable within the predetermined measurement range will not flow between the first detector and the second detector. Therefore, it can be determined that the inspection wiring 23 is broken.

相對於此,在預定的測量範圍內可測量之預定值以上的電流透過第1檢查用配線23a-1而在第1探測器及第2探測器之間流通的情況下,可判斷此第1檢查用配線23a並未斷線。On the other hand, when a current equal to or greater than a predetermined value measurable within a predetermined measurement range flows between the first detector and the second detector through the first inspection wiring 23a-1, it can be determined that the first inspection wiring 23a is not disconnected.

如此,能夠使用檢查用治具確認第1檢查用配線23a-1之斷線的有無。以同樣的方式進行,也能夠確認從第1檢查用配線23a-2到23a-5及多條第2檢查用配線23b之斷線的有無。In this way, the presence or absence of disconnection of the first inspection wiring 23a-1 can be checked using the inspection jig. In the same manner, the presence or absence of disconnection of the first inspection wirings 23a-2 to 23a-5 and the plurality of second inspection wirings 23b can also be checked.

因為能夠藉由進行各檢查用配線23的導通檢查而檢查斷線的有無,所以能夠確定在哪個位置的檢查用配線23接受到漏光D而斷線。因此,能夠定量地評估漏光D的影響從切割道13遍及至多長的距離為止。Since the presence of a disconnection can be checked by conducting a continuity check on each inspection wiring 23, it is possible to identify at which position of the inspection wiring 23 a disconnection occurs due to receiving the leakage light D. Therefore, it is possible to quantitatively evaluate how far the influence of the leakage light D extends from the dicing street 13.

圖5(A)為將元件區域15A局部地放大表示的俯視圖。在圖5(A)中表示在漏光確認步驟(S30)中之結果的一例。另外,在圖5(A)中的箭頭是雷射光束L及卡盤台12的相對移動方向E,例如與雷射加工裝置10的X軸方向平行。FIG5(A) is a top view showing a part of the device region 15A in an enlarged manner. FIG5(A) shows an example of the result in the light leakage confirmation step (S30). In addition, the arrow in FIG5(A) is the relative movement direction E of the laser beam L and the chuck stage 12, which is parallel to the X-axis direction of the laser processing device 10, for example.

在圖5(A)所示的例子中,僅在切割道13-2的第1方向A之一方側(例如正方向側)的檢查用區域15b形成有變質區域27。形成有變質區域27的檢查用配線23為斷線狀態。另外,在切割道13-2的第1方向A之另一方側(例如負方向側)的檢查用區域15b並未形成有變質區域27。In the example shown in FIG. 5(A), the deteriorated region 27 is formed only in the inspection region 15b on one side (e.g., the positive direction side) of the scribe line 13-2 in the first direction A. The inspection wiring 23 having the deteriorated region 27 is in a disconnected state. In addition, the deteriorated region 27 is not formed in the inspection region 15b on the other side (e.g., the negative direction side) of the scribe line 13-2 in the first direction A.

然而,由於雷射光束L之中心與用於照射雷射光束L的光學系統之透鏡的光軸或與此光學系統之狹縫的中心的位置錯位等原因,所以會有在雷射光束L的能量分布產生偏移的情況。此情況下,漏光D會到達與圖5(A)所示的例子不同的區域。圖5(B)為將元件區域15A局部地放大表示的俯視圖。在圖5(B)中表示在漏光確認步驟(S30)中之結果的另一例。However, due to the positional misalignment between the center of the laser beam L and the optical axis of the lens of the optical system for irradiating the laser beam L or the center of the slit of the optical system, the energy distribution of the laser beam L may be offset. In this case, the leakage light D reaches a region different from the example shown in FIG. 5 (A). FIG. 5 (B) is a top view showing a partial enlargement of the device region 15A. FIG. 5 (B) shows another example of the result in the light leakage confirmation step (S30).

在圖5(B)所示的例子中,在夾住切割道13-2之兩側的檢查用區域15b形成有變質區域27。已形成有變質區域27的檢查用配線23是斷線狀態,未形成有變質區域27的檢查用配線則非斷線狀態。In the example shown in Fig. 5(B), the inspection area 15b on both sides of the dicing street 13-2 has a deteriorated area 27. The inspection wiring 23 with the deteriorated area 27 is disconnected, and the inspection wiring without the deteriorated area 27 is not disconnected.

如此,藉由利用在檢查用區域15b所設置的檢查用配線23來進行導通檢查,而能夠確定在哪個位置的檢查用配線23受到漏光D而斷線。因此,能夠定量地評估漏光D的影響從切割道13遍及至多長的距離為止,及漏光D在多久的頻率下會發生等。此外,根據定量的評估,能夠修正雷射光束L的照射條件。In this way, by performing a continuity test using the inspection wiring 23 provided in the inspection area 15b, it is possible to determine at which position the inspection wiring 23 is broken due to the leakage light D. Therefore, it is possible to quantitatively evaluate how far the influence of the leakage light D extends from the dicing street 13, and at what frequency the leakage light D occurs. In addition, based on the quantitative evaluation, the irradiation conditions of the laser beam L can be corrected.

接著,說明第2實施方式的檢查用基板11。圖7為第2實施方式之元件區域15A的局部放大圖。第2實施方式的檢查用基板11除了在檢查用區域15b,還在切割道13-2上具有多條檢查用配線23。Next, the inspection substrate 11 of the second embodiment will be described. Fig. 7 is a partial enlarged view of the device region 15A of the second embodiment. The inspection substrate 11 of the second embodiment has a plurality of inspection wirings 23 on the dicing street 13-2 in addition to the inspection region 15b.

更具體而言,以將切割道13-2夾在中間而對向的方式配置的兩個檢查用區域15b之間,沿著切割道13-2設置多條第3檢查用配線23c(23c-1、23c-2、23c-3及23c-4)。多條第3檢查用配線23c是在與切割道13-2正交的方向上,以相鄰的每條互相分開預定距離的方式配置。More specifically, between two inspection areas 15b arranged opposite to each other with the dicing street 13-2 sandwiched therebetween, a plurality of third inspection wirings 23c (23c-1, 23c-2, 23c-3, and 23c-4) are provided along the dicing street 13-2. The plurality of third inspection wirings 23c are arranged in a direction orthogonal to the dicing street 13-2 so that adjacent ones are separated from each other by a predetermined distance.

每條第3檢查用配線23c在第2方向B具有與第1檢查用配線23a-1相同的長度。此外,在第3檢查用配線23c之每條的兩端設置有第3電極墊25c,該第3電極墊25c以與第1電極墊25a相同之材料所形成且具有相同的形狀及大小。Each third inspection wiring 23c has the same length as the first inspection wiring 23a-1 in the second direction B. In addition, third electrode pads 25c are provided at both ends of each third inspection wiring 23c. The third electrode pads 25c are formed of the same material as the first electrode pads 25a and have the same shape and size.

沿著第2方向B以從多條第3檢查用配線23c分開預定距離的態樣,沿著切割道13-2設置有多條第4檢查用配線23d(23d-1、23d-2、23d-3及23d-4)。多條第4檢查用配線23d是在與切割道13-2正交的方向上,以相鄰的每條互相分開預定距離的方式配置。A plurality of fourth inspection wirings 23d (23d-1, 23d-2, 23d-3, and 23d-4) are provided along the dicing street 13-2 in a manner separated from the plurality of third inspection wirings 23c by a predetermined distance along the second direction B. The plurality of fourth inspection wirings 23d are arranged in a direction orthogonal to the dicing street 13-2 in a manner that adjacent ones are separated from each other by a predetermined distance.

每條第4檢查用配線23d在第2方向B具有與第2檢查用配線23b-1相同的長度。此外,在第4檢查用配線23d之每條的兩端設置有第4電極墊25d,該第4電極墊25d以與第2電極墊25b相同之材料所形成且具有相同的形狀及大小。Each of the fourth inspection wirings 23d has the same length as the second inspection wiring 23b-1 in the second direction B. In addition, fourth electrode pads 25d are provided at both ends of each of the fourth inspection wirings 23d. The fourth electrode pads 25d are formed of the same material as the second electrode pads 25b and have the same shape and size.

為了將第3檢查用配線23c及第4檢查用配線23d密集地配置,在第2方向B相鄰的第3電極墊25c及第4電極墊25d是以與在第2方向B相鄰的第1電極墊25a及第2電極墊25b之間距離的相同距離分開。此外,多條第3檢查用配線23c及多條第4檢查用配線23d是沿著切割道13-2交互地配置。In order to densely arrange the third inspection wiring 23c and the fourth inspection wiring 23d, the third electrode pad 25c and the fourth electrode pad 25d adjacent to each other in the second direction B are separated by the same distance as the distance between the first electrode pad 25a and the second electrode pad 25b adjacent to each other in the second direction B. In addition, the plurality of third inspection wirings 23c and the plurality of fourth inspection wirings 23d are alternately arranged along the dicing street 13-2.

在第2實施方式中,因為在檢查用基板11的切割道13-2設置多條檢查用配線23,所以能夠定量地評估漏光D的影響遍及至切割道13-2的哪個範圍為止。進一步,根據已斷線之第3檢查用配線23c及第4檢查用配線23d的數目,而可算出漏光D到達第3檢查用配線23c及第4檢查用配線23d的頻率。In the second embodiment, since a plurality of inspection wirings 23 are provided on the dicing street 13-2 of the inspection substrate 11, it is possible to quantitatively evaluate the extent of the influence of the leakage light D on the dicing street 13-2. Furthermore, based on the number of the third inspection wirings 23c and the fourth inspection wirings 23d that have been disconnected, the frequency of the leakage light D reaching the third inspection wirings 23c and the fourth inspection wirings 23d can be calculated.

另外,第3檢查用配線23c及第4檢查用配線23d的配置並不限定於上述例子。第3檢查用配線23c及第4檢查用配線23d也可以透過第3電極墊25c及第4電極墊25d而沿著第2方向B成為連接成一線的方式設置。此外,第3電極墊25c及第4電極墊25d除了設置在切割道13-2,也可設置在切割道13-1。In addition, the configuration of the third inspection wiring 23c and the fourth inspection wiring 23d is not limited to the above example. The third inspection wiring 23c and the fourth inspection wiring 23d can also be arranged in a manner of being connected in a line along the second direction B through the third electrode pad 25c and the fourth electrode pad 25d. In addition, the third electrode pad 25c and the fourth electrode pad 25d can be arranged in addition to being arranged in the cutting street 13-2, and can also be arranged in the cutting street 13-1.

接著,說明第3實施方式的檢查用基板11。圖8為第3實施方式之元件區域15A的局部放大圖。在第3實施方式的檢查用區域15b中,在切割道13-2側設置有多條第5檢查用配線23e(對應多條第1檢查用配線23a的變化例)。Next, the inspection substrate 11 of the third embodiment will be described. Fig. 8 is a partial enlarged view of the device region 15A of the third embodiment. In the inspection region 15b of the third embodiment, a plurality of fifth inspection wirings 23e (corresponding to a variation of the plurality of first inspection wirings 23a) are provided on the dicing street 13-2 side.

多條第5檢查用配線23e(23e-1、23e-2、23e-3、23e-4及23e-5)的每條是沿著第2方向B具有與檢查用區域15b之一邊大致相等的長度。每條第5檢查用配線23e在第2方向B中之兩端的位置為一致。Each of the plurality of fifth inspection wirings 23e (23e-1, 23e-2, 23e-3, 23e-4 and 23e-5) has a length substantially equal to one side of the inspection region 15b along the second direction B. Both ends of each fifth inspection wiring 23e in the second direction B are aligned.

在第5檢查用配線23e之長度方向兩端的各端設置有第5電極墊25e。此外,每條第5檢查用配線23e進一步在其兩端之間的位置以預定的間隔設置1個以上的第5電極墊25e。A fifth electrode pad 25e is provided at each of the two ends in the longitudinal direction of the fifth inspection wiring 23e. In addition, one or more fifth electrode pads 25e are further provided at predetermined intervals between the two ends of each fifth inspection wiring 23e.

另外,在每條第5檢查用配線23e中,在第1方向A相鄰的多個第5電極墊25e在第一方向A排成一列。亦即,在第1方向A相鄰的多個第5電極墊25e被配置在第2方向B的相同位置。In each fifth inspection wiring 23e, a plurality of fifth electrode pads 25e adjacent to each other in the first direction A are arranged in a row in the first direction A. That is, a plurality of fifth electrode pads 25e adjacent to each other in the first direction A are arranged at the same position in the second direction B.

在第3實施方式的檢查用基板11中,使第1探測器接觸第5檢查用配線23e中的在第2方向B相鄰之一對第5電極墊25e之中的一者,再使第2探測器接觸另一者而進行導通檢查。In the inspection substrate 11 of the third embodiment, the first probe is brought into contact with one of a pair of fifth electrode pads 25e adjacent to each other in the second direction B in the fifth inspection wiring 23e, and the second probe is brought into contact with the other to perform a continuity test.

藉此,可確認位於在第2方向B相鄰之任意一對的第5電極墊25e之間的第5檢查用配線23e的一部份是否是斷線狀態。此外,根據已斷線之區域的數目,可算出漏光D到達第5檢查用配線23e的頻率。This makes it possible to check whether a portion of the fifth inspection wiring 23e between any pair of fifth electrode pads 25e adjacent to each other in the second direction B is disconnected. In addition, the frequency of the leakage light D reaching the fifth inspection wiring 23e can be calculated based on the number of disconnected regions.

第3實施方式的檢查用配線23與從切割道13-2起的距離無關而在第2方向B上具有相同的長度。因此,例如在第1實施方式中到達在第2方向B相鄰的第1檢查用配線23a-5及第2檢查用配線23b-5之間的漏光D,在第3實施方式中也會到達第5檢查用配線53e-5。因此,與第1實施方式相比,能更正確地算出漏光D的頻率。The inspection wiring 23 of the third embodiment has the same length in the second direction B regardless of the distance from the dicing street 13-2. Therefore, for example, the leakage light D that reaches between the first inspection wiring 23a-5 and the second inspection wiring 23b-5 that are adjacent in the second direction B in the first embodiment will also reach the fifth inspection wiring 53e-5 in the third embodiment. Therefore, the frequency of the leakage light D can be calculated more accurately than in the first embodiment.

另外,在第3實施方式中,橫跨一個檢查用區域15b的四邊而同樣地設置有多條第5檢查用配線23e。亦即,在第1方向A上與切割道13-2位於相反側之切割道13-2的附近,與位於第2方向B的一方側(例如正方向側)及第2方向B的另一方側(例如負方向側)之切割道13-1的附近都設置有第5檢查用配線23e。In addition, in the third embodiment, a plurality of fifth inspection wirings 23e are similarly provided across the four sides of one inspection area 15b. That is, the fifth inspection wirings 23e are provided near the dicing street 13-2 located on the opposite side to the dicing street 13-2 in the first direction A, and near the dicing street 13-1 located on one side (e.g., the positive direction side) and the other side (e.g., the negative direction side) of the second direction B.

因此,在一個檢查用區域15b的四邊之各邊中,根據已斷線的第5檢查用配線23e之區域的數目,可算出漏光D到達的頻率。另外,第3實施方式也可在一個檢查用區域15b的四邊之各邊中,定量地評估漏光D的影響從切割道13遍及至多長的距離為止。Therefore, the frequency of the arrival of the leakage light D can be calculated based on the number of areas of the disconnected fifth inspection wiring 23e in each of the four sides of an inspection area 15b. In addition, the third embodiment can also quantitatively evaluate the distance from the cutting street 13 to which the influence of the leakage light D extends in each of the four sides of an inspection area 15b.

另外,上述之實施方式的構造、方法等在不脫離本發明之目的範圍內可適當變更實施。例如,檢查用配線23的配置及電極墊25的形狀及配置並不限定於上述的例子。在第3實施方式的檢查用基板11之切割道13也可適用第2實施方式的第3檢查用配線23c及第4檢查用配線23d。In addition, the structure and method of the above-mentioned embodiment can be appropriately changed and implemented within the scope of the purpose of the present invention. For example, the configuration of the inspection wiring 23 and the shape and configuration of the electrode pad 25 are not limited to the above-mentioned examples. The third inspection wiring 23c and the fourth inspection wiring 23d of the second embodiment can also be applied to the cutting street 13 of the inspection substrate 11 of the third embodiment.

此外,在上述的實施方式中,藉由在預定測量範圍內可測量的電流是否在第1探測器及第2探測器之間流通,而判斷檢查用配線23的斷線。但是,也可藉由測量檢查用配線23之阻抗值的變化,而判斷檢查用配線23是否有部分損傷,或判斷檢查用電線23是否斷線。In the above-mentioned embodiment, the disconnection of the inspection wiring 23 is determined by determining whether a measurable current flows between the first detector and the second detector within a predetermined measurement range. However, it is also possible to determine whether the inspection wiring 23 is partially damaged or whether the inspection wiring 23 is disconnected by measuring the change in the impedance value of the inspection wiring 23.

1:框架單元 10:雷射加工裝置 11:檢查用基板 11a:正面(另一側的面) 11b:背面(一側的面) 11c:缺口 11d:改質層 11e:裂痕 12:卡盤台 12a:保持面 13,13-1,13-2:切割道 14:夾具單元 15a:元件 15b:檢查用區域 15A:元件區域 15:外周剩餘區域 16:加工頭 17:切割膠膜 19:環狀框架 23:檢查用配線 23a:第1檢查用配線 23b:第2檢查用配線 23c:第3檢查用配線 23d:第4檢查用配線 23e:第5檢查用配線 25:電極墊 25a:第1電極墊 25b:第2電極墊 25c:第3電極墊 25d:第4電極墊 25e:第5電極墊 27:變質區域 A:第1方向 B:第2方向 C:區域 D:漏光 E:移動方向 L:雷射光束 1: Frame unit 10: Laser processing device 11: Inspection substrate 11a: Front (surface on the other side) 11b: Back (surface on one side) 11c: Notch 11d: Modified layer 11e: Crack 12: Chuck table 12a: Holding surface 13,13-1,13-2: Cutting path 14: Clamp unit 15a: Component 15b: Inspection area 15A: Component area 15: Peripheral remaining area 16: Processing head 17: Cutting film 19: Ring frame Frame 23: Inspection wiring 23a: 1st inspection wiring 23b: 2nd inspection wiring 23c: 3rd inspection wiring 23d: 4th inspection wiring 23e: 5th inspection wiring 25: Electrode pad 25a: 1st electrode pad 25b: 2nd electrode pad 25c: 3rd electrode pad 25d: 4th electrode pad 25e: 5th electrode pad 27: Deteriorated area A: 1st direction B: 2nd direction C: Area D: Light leakage E: Moving direction L: Laser beam

圖1為框架單元的立體圖。 圖2為將第1實施方式的元件區域局部地放大表示的俯視圖。 圖3為框架單元及雷射加工裝置的局部剖面側視圖。 圖4為圖3之區域C的放大圖。 圖5(A)為將元件區域局部地放大表示的俯視圖;圖5(B)為將元件區域局部地放大表示的俯視圖。 圖6為表示檢查方法的流程圖。 圖7為第2實施方式之元件區域的局部放大圖。 圖8為第3實施方式之元件區域的局部放大圖。FIG. 1 is a three-dimensional view of a frame unit. FIG. 2 is a top view showing a partial enlargement of a component area of the first embodiment. FIG. 3 is a partial cross-sectional side view of a frame unit and a laser processing device. FIG. 4 is an enlarged view of area C of FIG. 3. FIG. 5 (A) is a top view showing a partial enlargement of a component area; FIG. 5 (B) is a top view showing a partial enlargement of a component area. FIG. 6 is a flow chart showing an inspection method. FIG. 7 is a partial enlarged view of a component area of the second embodiment. FIG. 8 is a partial enlarged view of a component area of the third embodiment.

13-1,13-2:切割道 13-1,13-2: Cutting Road

15A:元件區域 15A: Component area

15a:元件 15a: Components

15b:檢查用區域 15b: Inspection area

23:檢查用配線 23: Inspection wiring

23a-1,23a-2,23a-3,23a-4,23a-5:第1檢查用配線 23a-1, 23a-2, 23a-3, 23a-4, 23a-5: Wiring for the first inspection

23b-1,23b-2,23b-3,23b-4,23b-5:第2檢查用配線 23b-1, 23b-2, 23b-3, 23b-4, 23b-5: Wiring for the second inspection

25:電極墊 25:Electrode pad

25a:第1電極墊 25a: 1st electrode pad

25b:第2電極墊 25b: Second electrode pad

A:第1方向 A: Direction 1

B:第2方向 B: Direction 2

Claims (3)

一種檢查用基板,用於檢查雷射光束的漏光,其特徵在於,該檢查用基板具備:一側的面,被照射具有穿透該檢查用基板之波長的該雷射光束;另一側的面,與該一側的面為相反側;切割道,被設定於該另一側的面;多條第1檢查用配線,在該另一側的面上每條沿著該切割道並被配置於從該切割道起不同的距離,且藉由預定能量的該雷射光束的該漏光而斷線;及多個第1電極墊,在該另一側的面上於該多條第1檢查用配線的每條設置兩個以上,並於該多條第1檢查用配線的每條中在沿著該切割道的方向上分開配置。 A test substrate for testing light leakage of a laser beam, characterized in that the test substrate comprises: a surface on one side, irradiated with the laser beam having a wavelength penetrating the test substrate; a surface on the other side, opposite to the surface on the one side; a cutting path, set on the surface on the other side; a plurality of first test wirings, each along the cutting path and arranged at different distances from the cutting path on the surface on the other side, and broken by the light leakage of the laser beam of predetermined energy; and a plurality of first electrode pads, two or more of which are set on each of the plurality of first test wirings on the surface on the other side, and separately arranged in the direction along the cutting path in each of the plurality of first test wirings. 如請求項1所述之檢查用基板,其中,進一步具備多條第2檢查用配線,其在該另一側的面上沿著該切割道與該多條第1檢查用配線分開,並且,其每條沿著該切割道而被配置於從該切割道起不同的距離。 The inspection substrate as described in claim 1 further comprises a plurality of second inspection wirings which are separated from the plurality of first inspection wirings along the cutting path on the surface of the other side, and each of which is arranged at a different distance from the cutting path along the cutting path. 一種檢查方法,使用檢查用基板檢查雷射光束的漏光,其特徵在於,該檢查用基板具備:一側的面,被照射具有穿透該檢查用基板之波長的該雷射光束;另一側的面,與該一側的面為相反側;切割道,被設定於該另一側的面;多條第1檢查用配線,在該另一側的面上每條沿著該切割道並被配置於從該切割道起不同的距離,且藉由預定能量的該雷射光束的該漏光而斷線;及多個第1電極墊,在該另一側的面上於該多條第1檢查用配線的每條設置兩個以上,並於該多條第1檢查用配線的每條中在沿著該切割道的方向上分開配置;該檢查方法具備:保持步驟,以卡盤台保持該檢查用基板之該另一側的面側; 雷射加工步驟,從該檢查用基板的該一側的面側,沿著該切割道照射該雷射光束,而在該檢查用基板的內部沿著該切割道形成改質層;及漏光確認步驟,在該雷射加工步驟之後,使探測器接觸該多條第1檢查用配線的每條上所設置的該多個第1電極墊,藉由確認該多條第1檢查用配線的斷線來確認該漏光的有無。 A testing method for testing the light leakage of a laser beam using a testing substrate, wherein the testing substrate comprises: a surface on one side, which is irradiated with the laser beam having a wavelength that penetrates the testing substrate; a surface on the other side, which is opposite to the surface on the one side; a cutting path, which is set on the surface on the other side; a plurality of first testing wirings, each of which is arranged along the cutting path and at a different distance from the cutting path on the surface on the other side and is broken by the light leakage of the laser beam of predetermined energy; and a plurality of first electrode pads, which are arranged on the surface on the other side at least two on each of the plurality of first testing wirings, and are Each of the plurality of first inspection wirings is separately arranged in the direction along the cutting path; the inspection method comprises: a holding step, holding the surface side of the other side of the inspection substrate with a chuck table; a laser processing step, irradiating the laser beam along the cutting path from the surface side of the one side of the inspection substrate, and forming a modified layer along the cutting path inside the inspection substrate; and a light leakage confirmation step, after the laser processing step, making the detector contact the plurality of first electrode pads provided on each of the plurality of first inspection wirings, and confirming the presence or absence of the light leakage by confirming the disconnection of the plurality of first inspection wirings.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6084716A (en) * 1997-07-09 2000-07-04 Kabushiki Kaisha Toshiba Optical substrate inspection apparatus
US20070235848A1 (en) * 2006-03-29 2007-10-11 Chih-Chin Liao Substrate having conductive traces isolated by laser to allow electrical inspection
EP1860428A2 (en) * 2006-05-26 2007-11-28 Negevtech Ltd. Wafer inspection using short-pulsed continuous broadband illumination
TW201714696A (en) * 2015-08-07 2017-05-01 迪思科股份有限公司 Inspection wafer and inspection wafer use method
TW201816864A (en) * 2016-10-14 2018-05-01 日商迪思科股份有限公司 Inspection wafer and inspection wafer use method

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04155937A (en) * 1990-10-19 1992-05-28 Fujitsu Ltd Monitoring of overpower of laser beam
JPH07301648A (en) * 1994-05-06 1995-11-14 Mitsubishi Electric Corp Substrate inspection device and substrate inspection method
JP2001203139A (en) * 2000-01-19 2001-07-27 Hitachi Ltd Method for manufacturing semiconductor device
JP2002246339A (en) * 2000-11-15 2002-08-30 Hitachi Ltd Method for manufacturing semiconductor device
JP2003340581A (en) 2002-05-24 2003-12-02 Koike Sanso Kogyo Co Ltd Laser processing apparatus and laser beam axial deviation detection member
JP2007305938A (en) * 2006-05-15 2007-11-22 Tomoegawa Paper Co Ltd Electrostatic adsorption device
JP2008109015A (en) * 2006-10-27 2008-05-08 Disco Abrasive Syst Ltd Wafer dividing method and dividing apparatus
JP5559599B2 (en) 2010-05-25 2014-07-23 ローム株式会社 Semiconductor device, manufacturing method thereof, and semiconductor wafer
JP5968150B2 (en) 2012-08-03 2016-08-10 株式会社ディスコ Wafer processing method
KR102137510B1 (en) * 2013-12-17 2020-07-27 삼성디스플레이 주식회사 Electrostatic Chuck
KR102311586B1 (en) * 2014-12-26 2021-10-12 삼성디스플레이 주식회사 Apparatus for deposition and substrate alignment method in the same
JP6706814B2 (en) * 2016-03-30 2020-06-10 パナソニックIpマネジメント株式会社 Photodetector and photodetection system
JP6721420B2 (en) 2016-06-02 2020-07-15 株式会社ディスコ Leakage light detection method
JP6935126B2 (en) * 2017-04-05 2021-09-15 株式会社ディスコ Wafer laser machining method
JP6925711B2 (en) * 2017-04-12 2021-08-25 株式会社ディスコ Laser machining method for frame unit and workpiece

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6084716A (en) * 1997-07-09 2000-07-04 Kabushiki Kaisha Toshiba Optical substrate inspection apparatus
US20070235848A1 (en) * 2006-03-29 2007-10-11 Chih-Chin Liao Substrate having conductive traces isolated by laser to allow electrical inspection
EP1860428A2 (en) * 2006-05-26 2007-11-28 Negevtech Ltd. Wafer inspection using short-pulsed continuous broadband illumination
TW201714696A (en) * 2015-08-07 2017-05-01 迪思科股份有限公司 Inspection wafer and inspection wafer use method
TW201816864A (en) * 2016-10-14 2018-05-01 日商迪思科股份有限公司 Inspection wafer and inspection wafer use method

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