請參考圖1，圖1繪示依據一些實施例，浸潤式冷卻系統1之結構示意圖。在圖1，一種浸潤式冷卻系統1包含工作槽10、晶片裝置2、微流管裝置11、第一連通管12及第一熱交換裝置13。工作槽10適於容置工作流體(容後詳述)而包含流體區L及蒸氣區V。流體區L用以容置液相工作流體101，蒸氣區V則用以容置混合氣相流體102(包含氣相工作流體及/或摻雜的水氣)(容後詳述)。晶片裝置2位於流體區L內且具有入口200及出口201(容後詳述)。晶片裝置2包含主板20、晶片21及封蓋22。主板20具有主表面202，該主表面202與鉛垂線(例如圖1之Z方向)實質平行(亦即，主表面202與鉛垂線(例如圖1之Z方向)之間夾一銳角，且該銳角例如為小於45°)。晶片21可為一個或多個晶片21，並未限制；其中，多個晶片21還例如可為3D堆疊(例如沿垂直於主表面202方向(例如圖1之堆疊方向D1))而形成的晶片堆疊(chip stack)結構。封蓋22位於主板20上(容後詳述)。晶片21位於封蓋22與主板20之間，例如封蓋22與主板20彼此可形成封閉空間以容置晶片21。微流管裝置11位於晶片裝置2內，微流管裝置11之第一端連通入口200，微流管裝置11之第二端連通出口201(容後詳述)。第一連通管12位於流體區L內，第一連通管12之第一端連通出口201(容後詳述)。第一連通管12之材料可為金屬、合金、陶瓷、塑膠、橡膠或包含一個或多個前述材料的組合，並未限制。第一熱交換裝置13位於流體區L內，該第一熱交換裝置13連通第一連通管12之第二端(容後詳述)。藉此，透過將晶片裝置2連通微流管裝置11及液
相工作流體101，晶片裝置2可因而被充分地冷卻。此外，透過同樣位於工作槽10之流體區L內且連通晶片裝置2的第一連通管12及第一熱交換裝置13，浸潤式冷卻系統1可避免習知位於系統外部的冷卻裝置所導致的問題(例如需要較長的連通管路，甚至需要消耗較高的泵送功率，才能使系統達到預期的冷卻效能)。
Please refer to FIG. 1 , which shows a schematic diagram of the structure of an immersion cooling system 1 according to some embodiments. In FIG. 1 , an immersion cooling system 1 includes a working tank 10, a chip device 2, a microfluidic device 11, a first connecting pipe 12, and a first heat exchange device 13. The working tank 10 is suitable for accommodating a working fluid (described in detail later) and includes a fluid zone L and a vapor zone V. The fluid zone L is used to accommodate a liquid-phase working fluid 101, and the vapor zone V is used to accommodate a mixed gas-phase fluid 102 (including a gas-phase working fluid and/or mixed water vapor) (described in detail later). The chip device 2 is located in the fluid zone L and has an inlet 200 and an outlet 201 (described in detail later). The chip device 2 includes a motherboard 20, a chip 21, and a cover 22. The main board 20 has a main surface 202, which is substantially parallel to the plumb line (e.g., the Z direction of FIG. 1 ) (i.e., there is an acute angle between the main surface 202 and the plumb line (e.g., the Z direction of FIG. 1 ), and the acute angle is, for example, less than 45°). The chip 21 may be one or more chips 21, without limitation; wherein, the multiple chips 21 may also be, for example, a chip stack structure formed by 3D stacking (e.g., along a direction perpendicular to the main surface 202 (e.g., the stacking direction D1 of FIG. 1 )). The cover 22 is located on the main board 20 (described in detail later). The chip 21 is located between the cover 22 and the main board 20, for example, the cover 22 and the main board 20 may form a closed space to accommodate the chip 21. The microfluidic device 11 is located in the chip device 2, the first end of the microfluidic device 11 is connected to the inlet 200, and the second end of the microfluidic device 11 is connected to the outlet 201 (described in detail later). The first connecting pipe 12 is located in the fluid zone L, and the first end of the first connecting pipe 12 is connected to the outlet 201 (described in detail later). The material of the first connecting pipe 12 can be metal, alloy, ceramic, plastic, rubber or a combination of one or more of the above materials, and is not limited. The first heat exchange device 13 is located in the fluid zone L, and the first heat exchange device 13 is connected to the second end of the first connecting pipe 12 (described in detail later). In this way, by connecting the chip device 2 to the microfluidic device 11 and the liquid-phase working fluid 101, the chip device 2 can be fully cooled. In addition, through the first connecting pipe 12 and the first heat exchange device 13 which are also located in the fluid zone L of the working tank 10 and connected to the chip device 2, the immersion cooling system 1 can avoid the problems caused by the conventional cooling device located outside the system (such as the need for a longer connecting pipe or even the need to consume a higher pumping power in order for the system to achieve the expected cooling performance).
請繼續參考圖1，在一些實施例中，工作槽10適於容置工作流體及待冷卻元件，該待冷卻元件可為各種具有高於工作流體之溫度的元件，例如圖1之晶片裝置2。上述工作流體(或稱熱傳流體)為不導電的流體。於通常情況下(即低於工作流體之沸點時)，工作流體為液體(即液相工作流體101)；且工作流體之沸點低於或略等於待冷卻元件之溫度。因此，當待冷卻元件浸沒於液相工作流體101時，液相工作流體101將因吸收待冷卻元件之熱量而快速達到臨界沸點，進而汽化為氣相工作流體。
Please continue to refer to Figure 1. In some embodiments, the working tank 10 is suitable for accommodating the working fluid and the component to be cooled. The component to be cooled can be various components with a temperature higher than the working fluid, such as the chip device 2 in Figure 1. The above-mentioned working fluid (or heat transfer fluid) is a non-conductive fluid. Under normal circumstances (i.e., below the boiling point of the working fluid), the working fluid is a liquid (i.e., liquid-phase working fluid 101); and the boiling point of the working fluid is lower than or slightly equal to the temperature of the component to be cooled. Therefore, when the component to be cooled is immersed in the liquid-phase working fluid 101, the liquid-phase working fluid 101 will quickly reach the critical boiling point due to absorbing the heat of the component to be cooled, and then vaporize into a gas-phase working fluid.
請繼續參考圖1，在一些實施例中，第一熱交換裝置13包含隔板130及多個熱交換流道131，隔板130用以區隔該些熱交換流道131。該些熱交換流道131對應連通第一連通管12之第二端。微流管裝置11、第一熱交換裝置13及其熱交換流道131適於通予循環流體120，該循環流體120可為相同或不同於液相工作流體101的流體，並未限制。在一些實施例中，該些熱交換流道131之管徑分別小於第一連通管12之第二端的管徑，因此，第一連通管12內部的循環流體120可分散於該些熱交換流道131，以使循環流體120可同步且更充分地進行熱交換。上述隔板130及熱交換流道131之材料可獨立地為各種具有導熱功能的材料，並未限制；例如可為金屬、合金或其組合。
Please continue to refer to FIG. 1. In some embodiments, the first heat exchange device 13 includes a partition 130 and a plurality of heat exchange channels 131. The partition 130 is used to separate the heat exchange channels 131. The heat exchange channels 131 correspond to the second end of the first communication tube 12. The microfluidic device 11, the first heat exchange device 13 and the heat exchange channels 131 are suitable for passing the circulating fluid 120. The circulating fluid 120 can be the same as or different from the liquid working fluid 101, and there is no limitation. In some embodiments, the diameters of the heat exchange channels 131 are respectively smaller than the diameter of the second end of the first connecting tube 12, so that the circulating fluid 120 inside the first connecting tube 12 can be dispersed in the heat exchange channels 131, so that the circulating fluid 120 can be heat exchanged synchronously and more fully. The materials of the partition 130 and the heat exchange channel 131 can be independently various materials with heat conduction function, without limitation; for example, they can be metals, alloys or combinations thereof.
在一些實施例中，浸潤式冷卻系統1還包含第二熱交換裝置18，該第二熱交換裝置18位於蒸氣區V內。舉例而言，請繼續參考圖1，第二熱交換裝置18包含冷凝器180，該冷凝器180位於蒸氣區V內(例如位於液相工作流體101之液面上方)。冷凝器180通予冷卻流體，冷凝器180及其冷卻流體具有較混合氣相流體102的溫度更低的溫度，例如低於工作流體之露點或沸點的溫度。因此，當混合氣相流體102中的氣相工作流體接觸到冷凝器180時，氣相工作流體即與冷凝器180進行熱交換。氣相工作流體經降溫而冷凝為液相工作流體101，並重新回到流體區L中，以繼續用於冷卻待冷卻元件(例如圖1之晶片裝置2)。藉此，透過在封閉環境中可重覆循環利用的工作流體，可避免不必要地增加工作流體的所需使用量，進而提高每單位的工作流體所能提供的冷卻效能。
In some embodiments, the immersion cooling system 1 further includes a second heat exchange device 18, which is located in the vapor zone V. For example, please continue to refer to Figure 1, the second heat exchange device 18 includes a condenser 180, which is located in the vapor zone V (for example, above the liquid surface of the liquid-phase working fluid 101). The condenser 180 is passed through the cooling fluid, and the condenser 180 and its cooling fluid have a temperature lower than the temperature of the mixed gas-phase fluid 102, for example, a temperature lower than the dew point or boiling point of the working fluid. Therefore, when the gas-phase working fluid in the mixed gas-phase fluid 102 contacts the condenser 180, the gas-phase working fluid exchanges heat with the condenser 180. The gas phase working fluid is cooled and condensed into liquid phase working fluid 101, and returns to the fluid zone L to continue to be used to cool the component to be cooled (such as the chip device 2 in Figure 1). In this way, by using the working fluid that can be repeatedly recycled in a closed environment, it is possible to avoid unnecessary increase in the required amount of working fluid, thereby improving the cooling performance that can be provided by each unit of working fluid.
請繼續參考圖1，在一些實施例中，第二熱交換裝置18還包含冷凝泵浦182及熱交換器184。冷凝泵浦182及熱交換器184係獨立地位於工作槽10之內部或外部，並未限制。舉例而言，在圖1，冷凝泵浦182及熱交換器184二者均位於工作槽10之外部，而僅有冷凝器180位於工作槽10之內部(例如位於蒸氣區V內)。冷凝泵浦182可為任何具有加壓功能的裝置，並未限制。冷凝泵浦182之第一端(例如透過第一冷凝管181)連通冷凝器180之第一端，冷凝泵浦182之第二端(例如透過第二冷凝管183)連通熱交換器184之第一端，熱交換器184之第二端(例如透過第三冷凝管185)連通冷凝器180之第二端。上述第一冷凝管181、第二冷凝管183及第三冷凝管185之材料可獨立地為金屬、合金、陶瓷、塑膠、橡膠或包含一個或多個前述材料的組合，並未限制。藉此，透過冷凝器180、
冷凝泵浦182及熱交換器184所形成的冷凝迴路，可將來自冷凝器180的冷卻流體(溫度較高)冷卻至低於工作流體之露點或沸點的溫度，再泵送回到冷凝器180以冷凝氣相工作流體。因此，工作槽10中的液相工作流體101可循環利用，以繼續用於冷卻待冷卻元件(例如圖1之晶片裝置2)。
Please continue to refer to FIG. 1. In some embodiments, the second heat exchange device 18 further includes a condensation pump 182 and a heat exchanger 184. The condensation pump 182 and the heat exchanger 184 are independently located inside or outside the working tank 10, and are not limited. For example, in FIG. 1, both the condensation pump 182 and the heat exchanger 184 are located outside the working tank 10, and only the condenser 180 is located inside the working tank 10 (for example, located in the steam zone V). The condensation pump 182 can be any device with a pressurization function, and is not limited. The first end of the condensation pump 182 is connected to the first end of the condenser 180 (for example, through the first condensation tube 181), the second end of the condensation pump 182 is connected to the first end of the heat exchanger 184 (for example, through the second condensation tube 183), and the second end of the heat exchanger 184 is connected to the second end of the condenser 180 (for example, through the third condensation tube 185). The materials of the first condensation tube 181, the second condensation tube 183 and the third condensation tube 185 can be independently metal, alloy, ceramic, plastic, rubber or a combination of one or more of the above materials, without limitation. Thus, through the condensation loop formed by the condenser 180, the condensation pump 182 and the heat exchanger 184, the cooling fluid (higher temperature) from the condenser 180 can be cooled to a temperature lower than the dew point or boiling point of the working fluid, and then pumped back to the condenser 180 to condense the gas phase working fluid. Therefore, the liquid phase working fluid 101 in the working tank 10 can be recycled to continue to be used to cool the components to be cooled (such as the chip device 2 in Figure 1).
在一些實施例中，入口200係選擇性地位於主板20及封蓋22中的至少一者；出口201係選擇性地位於主板20及封蓋22中的至少一者。亦即，在一些實施例中，入口200係選擇性地位於主板20、或位於封蓋22、或同時位於主板20及封蓋22；出口201係選擇性地位於主板20、或位於封蓋22、或同時位於主板20及封蓋22。
In some embodiments, the inlet 200 is selectively located at least one of the main board 20 and the cover 22; the outlet 201 is selectively located at least one of the main board 20 and the cover 22. That is, in some embodiments, the inlet 200 is selectively located at the main board 20, or at the cover 22, or at both the main board 20 and the cover 22; the outlet 201 is selectively located at the main board 20, or at the cover 22, or at both the main board 20 and the cover 22.
舉例而言，請同時參考圖1及圖4，圖4繪示依據如圖1的浸潤式冷卻系統1，其部分區域A之第四實施例之結構示意圖。在圖4，入口200位於主板20，且出口201亦位於主板20。微流管裝置11包含第一微流管110及第二微流管111。循環流體120可自入口200(沿著流入方向D0)進入到第二微流管111，並自第一微流管110排出，進而有效地冷卻晶片裝置2(見於圖1)及其晶片21。
For example, please refer to FIG. 1 and FIG. 4 at the same time. FIG. 4 shows a schematic diagram of the structure of a fourth embodiment of a partial area A of the immersion cooling system 1 according to FIG. 1. In FIG. 4, the inlet 200 is located on the main board 20, and the outlet 201 is also located on the main board 20. The microfluidic device 11 includes a first microfluidic tube 110 and a second microfluidic tube 111. The circulating fluid 120 can enter the second microfluidic tube 111 from the inlet 200 (along the inflow direction D0) and be discharged from the first microfluidic tube 110, thereby effectively cooling the chip device 2 (see FIG. 1) and its chip 21.
具體地，請繼續參考圖1及圖4，第一微流管110可為一個或多個第一微流管110，第一連通管12透過出口201對應連通該些第一微流管110。例如，第一微流管110之第一端連通晶片21，第一微流管110之第二端連通出口201，且第一微流管110之管徑小於第一連通管12之管徑。此外，各第一微流管110之第一端可依照晶片21的圖樣及/或其堆疊方式而配置於一個或多個晶片21之間。第二微流管111可為一個或多個第二微流管111，且各第二微流管111對應連通入口200。例如，第二微流管111之
第一端連通晶片21，第二微流管111之第二端連通入口200。此外，各第二微流管111之第一端亦可依照晶片21的圖樣及/或其堆疊方式而配置於一個或多個晶片21之間。
Specifically, please continue to refer to FIG. 1 and FIG. 4 , the first microfluidic tube 110 may be one or more first microfluidic tubes 110, and the first connecting tube 12 is connected to the first microfluidic tubes 110 through the outlet 201. For example, the first end of the first microfluidic tube 110 is connected to the chip 21, the second end of the first microfluidic tube 110 is connected to the outlet 201, and the diameter of the first microfluidic tube 110 is smaller than the diameter of the first connecting tube 12. In addition, the first end of each first microfluidic tube 110 can be arranged between one or more chips 21 according to the pattern of the chip 21 and/or its stacking method. The second microfluidic tube 111 can be one or more second microfluidic tubes 111, and each second microfluidic tube 111 is connected to the inlet 200. For example, the first end of the second microfluidic tube 111 is connected to the chip 21, and the second end of the second microfluidic tube 111 is connected to the inlet 200. In addition, the first end of each second microfluidic tube 111 can also be arranged between one or more chips 21 according to the pattern of the chip 21 and/or its stacking method.
位於晶片裝置2中的第一微流管110及第二微流管111彼此實質連通，以使循環流體120可流動於第一微流管110及第二微流管111。上述第一微流管110及第二微流管111之材料可獨立地為塑膠、橡膠或其組合，並未限制。因此，藉由第一微流管110及第二微流管111內部的循環流體120，可有效地冷卻該些晶片21。在此實施例中，循環流體120可為相同於液相工作流體101(見於圖1)的流體，因而可避免因工作槽10內之流體間的相互汙染。基此，一些實施例的入口200無須再連通至其他的連通管路(例如第二連通管14)及/或泵浦15(容後詳述)，循環流體120(即此實施例之液相工作流體101)亦可透過毛細現象及/或熱對流作用而自入口200進入到第二微流管111，進而有效地冷卻晶片裝置2(見於圖1)及其晶片21。
The first microfluidic tube 110 and the second microfluidic tube 111 in the chip device 2 are substantially connected to each other so that the circulating fluid 120 can flow in the first microfluidic tube 110 and the second microfluidic tube 111. The materials of the first microfluidic tube 110 and the second microfluidic tube 111 can be plastic, rubber or a combination thereof independently, without limitation. Therefore, the chips 21 can be effectively cooled by the circulating fluid 120 inside the first microfluidic tube 110 and the second microfluidic tube 111. In this embodiment, the circulating fluid 120 can be the same fluid as the liquid-phase working fluid 101 (see FIG. 1), thereby avoiding mutual contamination between the fluids in the working tank 10. Based on this, the inlet 200 of some embodiments does not need to be connected to other connecting pipes (such as the second connecting pipe 14) and/or the pump 15 (described later in detail), and the circulating fluid 120 (i.e., the liquid working fluid 101 of this embodiment) can also enter the second microfluidic tube 111 from the inlet 200 through capillary phenomenon and/or thermal convection, thereby effectively cooling the chip device 2 (see Figure 1) and its chip 21.
再舉例而言，請同時參考圖1及圖3，圖3繪示依據如圖1的浸潤式冷卻系統1，其部分區域A之第三實施例之結構示意圖。在圖3，入口200位於主板20，且出口201亦位於主板20。此外，浸潤式冷卻系統1還包含第二連通管14，該第二連通管14位於流體區L(見於圖1)內，第二連通管14連通入口200，且第二微流管111之管徑小於第二連通管14之管徑。第二連通管14之材料可為金屬、合金、陶瓷、塑膠、橡膠或包含一個或多個前述材料的組合，且可相同於或不同於第一連通管12之材料，並未限制。在此實施例中，循環流體120為相同於液相工作流體101(見於圖1)
的流體，因而可避免因工作槽10內之流體間的相互汙染。基此，一些實施例的入口200及第二連通管14無須再連通至其他的泵浦15(容後詳述)，循環流體120(即此實施例之液相工作流體101)亦可透過毛細現象及/或熱對流作用而自第二連通管14及入口200進入到第二微流管111，進而有效地冷卻晶片裝置2(見於圖1)及其晶片21。此外，輔以同樣位於工作槽10之流體區L(見於圖1)內且連通晶片裝置2的第二連通管14，浸潤式冷卻系統1亦可避免習知位於系統外部的冷卻裝置所導致的問題。
For another example, please refer to FIG. 1 and FIG. 3 simultaneously. FIG. 3 is a schematic diagram of the structure of a third embodiment of a partial area A of the immersion cooling system 1 as shown in FIG. 1. In FIG. 3, the inlet 200 is located on the main board 20, and the outlet 201 is also located on the main board 20. In addition, the immersion cooling system 1 further includes a second connecting pipe 14, which is located in the fluid area L (see FIG. 1), the second connecting pipe 14 is connected to the inlet 200, and the diameter of the second microfluidic tube 111 is smaller than the diameter of the second connecting pipe 14. The material of the second connecting pipe 14 can be metal, alloy, ceramic, plastic, rubber, or a combination of one or more of the aforementioned materials, and can be the same as or different from the material of the first connecting pipe 12, without limitation. In this embodiment, the circulating fluid 120 is the same fluid as the liquid phase working fluid 101 (see FIG. 1 ), thereby avoiding mutual contamination between the fluids in the working tank 10 . Based on this, the inlet 200 and the second connecting pipe 14 of some embodiments do not need to be connected to other pumps 15 (described later in detail), and the circulating fluid 120 (i.e., the liquid phase working fluid 101 of this embodiment) can also enter the second microfluidic tube 111 from the second connecting pipe 14 and the inlet 200 through capillary action and/or thermal convection, thereby effectively cooling the chip device 2 (see FIG. 1 ) and its chip 21. In addition, with the aid of a second connecting pipe 14 which is also located in the fluid zone L (see FIG. 1 ) of the working tank 10 and connected to the chip device 2 , the immersion cooling system 1 can also avoid the problems caused by the conventional cooling device located outside the system.
再舉例而言，請同時參考圖1及圖2，圖2繪示依據如圖1的浸潤式冷卻系統1，其部分區域A之第二實施例之結構示意圖。在圖2，入口200位於主板20，且出口201亦位於主板20。此外，浸潤式冷卻系統1更包含泵浦15，該泵浦15位於流體區L(見於圖1)內，且泵浦15連通第二連通管14。例如，在圖2，第二連通管14之二端分別連通泵浦15及入口200。在此實施例中，循環流體120為相同於液相工作流體101(見於圖1)的流體，因而可避免因工作槽10內之流體間的相互汙染。泵浦15可為任何具有加壓功能的裝置，並未限制。藉此，循環流體120(即此實施例之液相工作流體101)除了可透過毛細現象及/或熱對流作用之外，亦可更透過泵浦15的加壓泵送而自第二連通管14及入口200進入到第二微流管111，進而更快速且有效地冷卻晶片裝置2(見於圖1)及其晶片21。此外，輔以同樣位於工作槽10之流體區L(見於圖1)內且連通晶片裝置2及第二連通管14的泵浦15，浸潤式冷卻系統1亦可避免習知位於系統外部的冷卻裝置所導致的問題。
For another example, please refer to FIG. 1 and FIG. 2 simultaneously. FIG. 2 is a schematic diagram of the structure of a second embodiment of a partial area A of the immersion cooling system 1 according to FIG. 1. In FIG. 2, the inlet 200 is located on the main board 20, and the outlet 201 is also located on the main board 20. In addition, the immersion cooling system 1 further includes a pump 15, which is located in the fluid area L (see FIG. 1), and the pump 15 is connected to the second communication pipe 14. For example, in FIG. 2, the two ends of the second communication pipe 14 are respectively connected to the pump 15 and the inlet 200. In this embodiment, the circulating fluid 120 is the same fluid as the liquid-phase working fluid 101 (see FIG. 1), so that mutual contamination between the fluids in the working tank 10 can be avoided. The pump 15 can be any device with a pressurizing function, and is not limited. Thus, the circulating fluid 120 (i.e., the liquid working fluid 101 of this embodiment) can enter the second microfluidic tube 111 from the second connecting pipe 14 and the inlet 200 through the capillary phenomenon and/or thermal convection, and can be pumped by the pump 15 under pressure, thereby cooling the chip device 2 (see FIG. 1 ) and its chip 21 more quickly and effectively. In addition, with the aid of the pump 15 which is also located in the fluid zone L (see FIG. 1 ) of the working tank 10 and connects the chip device 2 and the second connecting pipe 14, the immersion cooling system 1 can also avoid the problems caused by the conventional cooling device located outside the system.
在一些實施例中，晶片裝置2電性連接泵浦15，以供應電力
至泵浦15，並可透過晶片裝置2發送控制訊號至泵浦15，以控制泵浦15(例如致動泵浦15以加壓循環流體120)。在一些實施例中，泵浦15位於晶片裝置2之主板20上，以電性連接主板20並接收來自晶片裝置2及其晶片21之控制訊號。藉此，泵浦15無須再電性連接至額外的電源供應器及/或控制裝置(例如IPC)，可避免因汙染液相工作流體101而增加冷卻成本。
In some embodiments, the chip device 2 is electrically connected to the pump 15 to supply power to the pump 15, and a control signal can be sent to the pump 15 through the chip device 2 to control the pump 15 (for example, actuating the pump 15 to pressurize the circulating fluid 120). In some embodiments, the pump 15 is located on the motherboard 20 of the chip device 2, electrically connected to the motherboard 20 and receiving control signals from the chip device 2 and its chip 21. In this way, the pump 15 does not need to be electrically connected to an additional power supply and/or control device (such as an IPC), which can avoid increasing cooling costs due to contamination of the liquid phase working fluid 101.
再舉例而言，請繼續參考圖1。在圖1，入口200位於主板20，且出口201亦位於主板20。此外，浸潤式冷卻系統1更包含第三連通管16，該第三連通管16位於流體區L內，第三連通管16之第一端連通第一熱交換裝置13，第三連通管16之第二端連通泵浦15。在此實施例中，由於晶片裝置2、微流管裝置11、第一連通管12、第一熱交換裝置13、第三連通管16、泵浦15及第二連通管14之間形成封閉迴路，因此循環流體120可為相同或不同於液相工作流體101的流體，並未限制。藉此，循環流體120可獨立地自出口201排出，並分別透過第一熱交換裝置13及泵浦15的熱交換及加壓泵送，而再自第二連通管14及入口200回到第二微流管111，進而有效地冷卻晶片裝置2及其晶片21。因此，除了泵浦15及第二連通管14之外，再輔以同樣位於工作槽10之流體區L內且連通泵浦15及第一熱交換裝置13的第三連通管16，浸潤式冷卻系統1亦可避免習知位於系統外部的冷卻裝置所導致的問題。
For another example, please continue to refer to FIG. 1. In FIG. 1, the inlet 200 is located on the main board 20, and the outlet 201 is also located on the main board 20. In addition, the immersion cooling system 1 further includes a third connecting pipe 16, which is located in the fluid zone L, and the first end of the third connecting pipe 16 is connected to the first heat exchange device 13, and the second end of the third connecting pipe 16 is connected to the pump 15. In this embodiment, since a closed loop is formed between the chip device 2, the microfluidic device 11, the first connecting pipe 12, the first heat exchange device 13, the third connecting pipe 16, the pump 15 and the second connecting pipe 14, the circulating fluid 120 can be the same or different from the liquid working fluid 101, without limitation. Thus, the circulating fluid 120 can be discharged independently from the outlet 201, and respectively pass through the heat exchange and pressurized pumping of the first heat exchange device 13 and the pump 15, and then return to the second microfluidic tube 111 from the second connecting pipe 14 and the inlet 200, thereby effectively cooling the chip device 2 and its chip 21. Therefore, in addition to the pump 15 and the second connecting pipe 14, the third connecting pipe 16 which is also located in the fluid area L of the working tank 10 and connects the pump 15 and the first heat exchange device 13 is used. The immersion cooling system 1 can also avoid the problems caused by the conventional cooling device located outside the system.
再舉例而言，請同時參考圖1及圖6，圖6繪示依據如圖1的浸潤式冷卻系統1，其部分區域A之第六實施例之結構示意圖。在圖6，入口200位於封蓋22，且出口201亦位於封蓋22。封蓋22之材料可為各種具有導熱功能的材料，例如金屬、合金或其組合，並未限制。此外，此實施例
亦可選擇性地包含第二連通管14、泵浦15及第三連通管16，其具體實施態樣可參考如前所述，在此不再詳述。因此，透過不同的入口200及出口201之配置方式，可提供更多可避免習知位於系統外部的冷卻裝置所導致的問題之浸潤式冷卻系統1。此外，晶片裝置2(見於圖1)之熱量可透過亦位於流體區L內且具有導熱功能的封蓋22導出，而與流體區L中的液相工作流體101進行熱交換，進而冷卻晶片裝置2(見於圖1)及其晶片21。
For another example, please refer to FIG. 1 and FIG. 6 simultaneously. FIG. 6 shows a schematic diagram of the structure of a sixth embodiment of a partial area A of the immersion cooling system 1 as shown in FIG. 1. In FIG. 6, the inlet 200 is located at the cover 22, and the outlet 201 is also located at the cover 22. The material of the cover 22 can be various materials with heat conduction function, such as metal, alloy or combination thereof, without limitation. In addition, this embodiment can also selectively include a second connecting pipe 14, a pump 15 and a third connecting pipe 16, and the specific implementation mode thereof can be referred to as described above, and will not be described in detail here. Therefore, through different configurations of the inlet 200 and the outlet 201, more immersion cooling systems 1 can be provided that can avoid the problems caused by the known cooling device located outside the system. In addition, the heat of the chip device 2 (see FIG. 1 ) can be conducted through the heat-conducting cover 22 which is also located in the fluid zone L, and heat exchange can be performed with the liquid working fluid 101 in the fluid zone L, thereby cooling the chip device 2 (see FIG. 1 ) and its chip 21.
再舉例而言，請同時參考圖1及圖7，圖7繪示依據如圖1的浸潤式冷卻系統1，其部分區域A之第七實施例之結構示意圖。在圖7，入口(包含入口200及入口200’)同時位於主板20及封蓋22(即入口200位於主板20，且入口200’位於封蓋22)，且出口(包含出口201及出口201’)同時位於主板20及封蓋22(即出口201位於主板20，且出口201’位於封蓋22)。微流管裝置11包含多個第一微流管110,110’及多個第二微流管111,111’。循環流體120可分別自入口200,200’(沿著流入方向D0,D0’)進入到第二微流管111,111’，並自第一微流管110,110’排出，進而有效地冷卻晶片裝置2(見於圖1)及其晶片21。
For another example, please refer to FIG. 1 and FIG. 7 simultaneously. FIG. 7 is a schematic diagram of the structure of a seventh embodiment of a partial area A of the immersion cooling system 1 according to FIG. 1. In FIG. 7, the inlet (including the inlet 200 and the inlet 200') is located at the main board 20 and the cover 22 (i.e., the inlet 200 is located at the main board 20, and the inlet 200' is located at the cover 22), and the outlet (including the outlet 201 and the outlet 201') is located at the main board 20 and the cover 22 (i.e., the outlet 201 is located at the main board 20, and the outlet 201' is located at the cover 22). The microfluidic device 11 includes a plurality of first microfluidic tubes 110, 110' and a plurality of second microfluidic tubes 111, 111'. The circulating fluid 120 can enter the second microfluidic tubes 111, 111' from the inlets 200, 200' (along the inflow directions D0, D0') and be discharged from the first microfluidic tubes 110, 110', thereby effectively cooling the chip device 2 (see FIG. 1) and its chip 21.
具體地，請繼續參考圖1及圖7，第一連通管12透過出口201,201’對應連通該些第一微流管110,110’。例如，各第一微流管110,110’之第一端均連通晶片21，各第一微流管110,110’之第二端分別連通出口201,201’，且各第一微流管110,110’之管徑小於第一連通管12之管徑。此外，各第一微流管110,110’之第一端可依照晶片21的圖樣及/或其堆疊方式而配置於一個或多個晶片21之間。各第二微流管111,111’分別對應連通入口200,200’。例如，各第二微流管111,111’之第一端均連通晶片
21，各第二微流管111,111’之第二端分別連通入口200,200’。此外，各第二微流管111,111’之第一端亦可依照晶片21的圖樣及/或其堆疊方式而配置於一個或多個晶片21之間。上述第一微流管110’及第二微流管111’之材料可相同於或不同於第一微流管110及第二微流管111之材料，並未限制。此外，此實施例亦可選擇性地包含第二連通管14，或包含第二連通管14及泵浦15，或包含第二連通管14、泵浦15及第三連通管16，可參考如前所述，在此不再詳述。因此，透過上述不同的入口200,200’及出口201,201’之配置方式，可提供更多可避免習知位於系統外部的冷卻裝置所導致的問題之浸潤式冷卻系統1(見於圖1)。
Specifically, please continue to refer to FIG. 1 and FIG. 7 , the first connecting tube 12 is connected to the first microfluidic tubes 110, 110' through the outlets 201, 201'. For example, the first end of each first microfluidic tube 110, 110' is connected to the chip 21, the second end of each first microfluidic tube 110, 110' is connected to the outlet 201, 201', and the diameter of each first microfluidic tube 110, 110' is smaller than the diameter of the first connecting tube 12. In addition, the first end of each first microfluidic tube 110, 110' can be arranged between one or more chips 21 according to the pattern of the chip 21 and/or its stacking method. Each second microfluidic tube 111, 111' is connected to the inlet 200, 200'. For example, the first end of each second microfluidic tube 111, 111' is connected to the chip
21, and the second end of each second microfluidic tube 111, 111' is connected to the inlet 200, 200' respectively. In addition, the first end of each second microfluidic tube 111, 111' can also be arranged between one or more chips 21 according to the pattern of the chip 21 and/or its stacking method. The material of the first microfluidic tube 110' and the second microfluidic tube 111' can be the same as or different from the material of the first microfluidic tube 110 and the second microfluidic tube 111, and there is no limitation. In addition, this embodiment can also selectively include the second connecting tube 14, or include the second connecting tube 14 and the pump 15, or include the second connecting tube 14, the pump 15 and the third connecting tube 16, which can be referred to as described above and will not be described in detail here. Therefore, through the above-mentioned different configurations of the inlets 200, 200' and the outlets 201, 201', an immersion cooling system 1 (see FIG. 1) can be provided that can avoid more problems caused by the conventional cooling device located outside the system.
舉例而言，在圖7，第一連通管12包含第一主流管127及多個第一次流管128,128’。各第一次流管128,128’之第一端連通該第一主流管127，以連通第一熱交換裝置13。第一次流管128,128’之第二端分別連通出口201,201’，以分別透過出口201,201’連通第一微流管110,110’。第一主流管127及第一次流管128,128’之管徑並未限制，例如各第一次流管128,128’之管徑係小於第一主流管127之管徑。上述第一主流管127及第一次流管128,128’之材料可為金屬、合金、陶瓷、塑膠、橡膠或包含一個或多個前述材料的組合，且第一主流管127及第一次流管128,128’之材料可為彼此相同或不同之材料，並未限制。此外，此實施例亦可選擇性地包含第二連通管14，或包含第二連通管14及泵浦15，或包含第二連通管14、泵浦15及第三連通管16，可參考如前所述，在此不再詳述。因此，透過上述不同的入口200,200’及出口201,201’之配置方式，可提供更多可避免習知位於系統外部的冷卻裝置所導致的問題之浸潤式冷卻系統1
(見於圖1)。
For example, in FIG7 , the first communication pipe 12 includes a first main flow pipe 127 and a plurality of first sub-flow pipes 128, 128'. The first end of each first sub-flow pipe 128, 128' is connected to the first main flow pipe 127 to connect to the first heat exchange device 13. The second ends of the first sub-flow pipes 128, 128' are respectively connected to the outlets 201, 201' to respectively connect to the first micro-flow pipes 110, 110' through the outlets 201, 201'. The pipe diameters of the first main flow pipe 127 and the first sub-flow pipes 128, 128' are not limited, for example, the pipe diameters of each first sub-flow pipe 128, 128' are smaller than the pipe diameter of the first main flow pipe 127. The materials of the first main flow pipe 127 and the first flow pipes 128, 128' can be metal, alloy, ceramic, plastic, rubber or a combination of one or more of the above materials, and the materials of the first main flow pipe 127 and the first flow pipes 128, 128' can be the same or different materials, without limitation. In addition, this embodiment can also selectively include a second connecting pipe 14, or include a second connecting pipe 14 and a pump 15, or include a second connecting pipe 14, a pump 15 and a third connecting pipe 16, which can be referred to as described above and will not be described in detail here. Therefore, through the above-mentioned different configurations of the inlet 200, 200' and the outlet 201, 201', more immersion cooling systems 1 that can avoid the problems caused by the known cooling device located outside the system can be provided
(see Figure 1).
再舉例而言，在圖7，浸潤式冷卻系統1還包含第二連通管14，該第二連通管14位於流體區L內，且第二連通管14包含第二主流管140及多個第二次流管141,141’。第二次流管141,141’分別連通入口200,200’，以分別透過入口200,200’連通第二微流管111,111’。第二主流管140及第二次流管141,141’之管徑並未限制，例如各第二次流管141,141’之管徑係小於第二主流管140之管徑。上述第二主流管140及第二次流管141,141’之材料可為金屬、合金、陶瓷、塑膠、橡膠或包含一個或多個前述材料的組合，且第二主流管140及第二次流管141,141’之材料可為彼此相同或不同之材料，並未限制。此外，此實施例亦可選擇性地包含泵浦15，或包含泵浦15及第三連通管16，可參照如前所述，在此不再詳述。因此，透過上述不同的入口200,200’及出口201,201’之配置方式，可提供更多可避免習知位於系統外部的冷卻裝置所導致的問題之浸潤式冷卻系統1(見於圖1)。
For another example, in FIG. 7 , the immersion cooling system 1 further includes a second communication pipe 14, which is located in the fluid zone L, and includes a second main flow pipe 140 and a plurality of secondary flow pipes 141, 141'. The secondary flow pipes 141, 141' are respectively connected to the inlets 200, 200', so as to be respectively connected to the second microfluidic pipes 111, 111' through the inlets 200, 200'. The diameters of the second main flow pipe 140 and the secondary flow pipes 141, 141' are not limited, for example, the diameters of the secondary flow pipes 141, 141' are smaller than the diameter of the second main flow pipe 140. The materials of the second main flow pipe 140 and the secondary flow pipes 141, 141' can be metal, alloy, ceramic, plastic, rubber or a combination of one or more of the above materials, and the materials of the second main flow pipe 140 and the secondary flow pipes 141, 141' can be the same or different materials, without limitation. In addition, this embodiment can also selectively include a pump 15, or include a pump 15 and a third connecting pipe 16, which can be referred to as described above and will not be described in detail here. Therefore, through the above-mentioned different configurations of the inlet 200, 200' and the outlet 201, 201', more immersion cooling systems 1 (see Figure 1) can be provided that can avoid the problems caused by the known cooling device located outside the system.
請同時參考圖1及圖5，圖5繪示依據如圖1的浸潤式冷卻系統1，其部分區域A之第五實施例之結構示意圖。第一熱交換裝置13之熱交換流道131具有一流動方向D2(見於圖1；或流動方向D2’，見於圖5)，該流動方向D2,D2’可因應不同需求而設置為與鉛垂線(例如圖1及圖5之Z方向)之間存在不同的角度關係。例如，在圖1，第一熱交換裝置13係緊鄰晶片裝置2設置，且熱交換流道131之流動方向D2與鉛垂線實質平行(亦即，該流動方向D2與鉛垂線之間夾一角度，該角度例如小於45°)。因此，循環流體120(或液相工作流體101)可自出口201排出後，即直接
進入熱交換流道131內部，以快速進行熱交換。或例如，在圖5，第一連通管12相對較長，而使得第一熱交換裝置13係遠離晶片裝置2設置，且熱交換流道131之流動方向D2’與鉛垂線實質垂直(亦即，該流動方向D2’與鉛垂線之間夾一角度，該角度例如為90°±45°)。因此，循環流體120(或液相工作流體101)可自出口201排出後，於相對較長的第一連通管12進行較充分的熱交換，並以溫度較低的狀態(即循環流體120與第一熱交換裝置13之間的溫差較大)進入到第一熱交換裝置13，以減少第一熱交換裝置13的工作負荷。
Please refer to FIG. 1 and FIG. 5 at the same time. FIG. 5 is a schematic diagram of the structure of a fifth embodiment of a partial area A of the immersion cooling system 1 as shown in FIG. 1. The heat exchange channel 131 of the first heat exchange device 13 has a flow direction D2 (see FIG. 1; or a flow direction D2', see FIG. 5). The flow directions D2, D2' can be set to have different angles with the plumb line (e.g., the Z direction of FIG. 1 and FIG. 5) according to different needs. For example, in FIG. 1, the first heat exchange device 13 is set adjacent to the chip device 2, and the flow direction D2 of the heat exchange channel 131 is substantially parallel to the plumb line (that is, there is an angle between the flow direction D2 and the plumb line, and the angle is, for example, less than 45°). Therefore, the circulating fluid 120 (or the liquid working fluid 101) can enter the heat exchange channel 131 directly after being discharged from the outlet 201 to quickly perform heat exchange. Or for example, in FIG5, the first connecting pipe 12 is relatively long, so that the first heat exchange device 13 is far away from the chip device 2, and the flow direction D2' of the heat exchange channel 131 is substantially perpendicular to the plumb line (that is, the flow direction D2' and the plumb line form an angle, such as 90°±45°). Therefore, after the circulating fluid 120 (or the liquid working fluid 101) is discharged from the outlet 201, it can undergo sufficient heat exchange in the relatively long first connecting pipe 12, and enter the first heat exchange device 13 at a lower temperature (i.e., the temperature difference between the circulating fluid 120 and the first heat exchange device 13 is large), so as to reduce the working load of the first heat exchange device 13.
請同時參考圖1、圖8A至圖8C，圖8A至圖8C分別繪示依據一些實施例，第一連通管12之剖面結構示意圖。在圖1，第一連通管12之內部具有內壁122(見於圖8A至圖8C)，第一連通管12包含連通管擾動部123，連通管擾動部123位於內壁122上(見於圖8A至圖8C)。連通管擾動部123例如為網格(mesh)124(見於圖8A)、金屬顆粒125(見於圖8B)、鰭片(fin)126(見於圖8C)或其組合(容後詳述)。亦即，連通管擾動部123可為同時包含前述二者或三者之組合，例如同時包含網格124及金屬顆粒125之組合、同時包含網格124及鰭片126之組合、同時包含金屬顆粒125與鰭片126之組合、或同時包含網格124、金屬顆粒125及鰭片126之組合。透過位於第一連通管12之內壁122上的連通管擾動部123，循環流體120在流經第一連通管12時，會在循環流體120(液體)與連通管擾動部123(例如固體)之間的異相界面(例如液體表面與固體表面之間)進一步異相成核(heterogeneous nucleation，或稱異質成核)並形成氣泡121(即氣相的循環流體120)。而若形成愈多的氣泡121，即
代表自液相的循環流體120中移除了愈多熱量，因此可更佳地冷卻液相的循環流體120。
Please refer to FIG. 1 and FIG. 8A to FIG. 8C at the same time. FIG. 8A to FIG. 8C respectively show schematic cross-sectional structures of the first connecting tube 12 according to some embodiments. In FIG. 1 , the first connecting tube 12 has an inner wall 122 (see FIG. 8A to FIG. 8C ) inside, and the first connecting tube 12 includes a connecting tube perturbation portion 123, and the connecting tube perturbation portion 123 is located on the inner wall 122 (see FIG. 8A to FIG. 8C ). The connecting tube perturbation portion 123 is, for example, a mesh 124 (see FIG. 8A ), metal particles 125 (see FIG. 8B ), fins 126 (see FIG. 8C ) or a combination thereof (described in detail later). That is, the connecting pipe disturbance portion 123 may be a combination of two or three of the aforementioned components, such as a combination of the mesh 124 and metal particles 125, a combination of the mesh 124 and fins 126, a combination of the metal particles 125 and fins 126, or a combination of the mesh 124, metal particles 125 and fins 126. Through the connecting pipe perturbation part 123 located on the inner wall 122 of the first connecting pipe 12, the circulating fluid 120 will further heterogeneously nucleate at the heterogeneous interface (e.g., between the liquid surface and the solid surface) between the circulating fluid 120 (liquid) and the connecting pipe perturbation part 123 (e.g., solid) when flowing through the first connecting pipe 12 and form bubbles 121 (i.e., the gas phase of the circulating fluid 120). If more bubbles 121 are formed, it means that more heat is removed from the liquid phase of the circulating fluid 120, so the liquid phase of the circulating fluid 120 can be better cooled.
舉例而言，在圖8A，上述連通管擾動部123為網格124。網格124可為一層或多層網格124，並未限制；例如在圖8A，網格124為四至五層網格124。網格124之篩孔及目數(即單位面積的網孔數)均未限制，而可依照各種需求進行配置。網格124之材料可為金屬、合金或其組合，亦未限制。藉此，透過位於第一連通管12之內壁122上的網格124，可在內壁122上製造更多粗糙表面及空隙。液相的循環流體120可因而在該些粗糙表面及空隙形成更多的異相界面，更有利於異相成核並形成更多的氣泡121。
For example, in FIG8A , the above-mentioned connecting pipe disturbance part 123 is a grid 124. The grid 124 can be a single layer or multiple layers of grid 124, and there is no limitation; for example, in FIG8A , the grid 124 is a four to five layers of grid 124. The mesh size and mesh number (i.e., the number of mesh holes per unit area) of the grid 124 are not limited, and can be configured according to various requirements. The material of the grid 124 can be metal, alloy or a combination thereof, and there is no limitation. Thus, through the grid 124 located on the inner wall 122 of the first connecting pipe 12, more rough surfaces and gaps can be manufactured on the inner wall 122. The circulating fluid 120 in the liquid phase can thus form more heterogeneous interfaces on these rough surfaces and gaps, which is more conducive to heterogeneous nucleation and the formation of more bubbles 121.
再舉例而言，在圖8B，上述連通管擾動部123為金屬顆粒125。金屬顆粒125之粒徑及其粒徑分布均未限制，而可依照各種需求進行配置；且各金屬顆粒125之粒徑可為彼此實質相同或不同，亦未限制。金屬顆粒125之材料可為金屬、合金或其組合，並未限制；例如為銅。藉此，透過位於第一連通管12之內壁122上的金屬顆粒125，可在內壁122上製造更多粗糙表面及空隙。液相的循環流體120可因而在該些粗糙表面及空隙形成更多的異相界面，更有利於異相成核並形成更多的氣泡121。此外，在一些實施例中，金屬顆粒125之堆疊高度(如圖8B之Y方向)亦可依照各種需求進行配置；例如在圖8B，內壁122之靠近出口201(見於圖1)的一側(即圖8B之靠近-Z方向的一側)設置有堆疊高度較高的金屬顆粒125，而使得更多的液相的循環流體120在一進入第一連通管12即異相成核。因此，液相的循環流體120可進而快速形成氣泡121，並更佳地冷卻
來自晶片裝置2(見於圖1)的循環流體120。
For another example, in FIG8B , the connecting tube disturbance part 123 is a metal particle 125. The particle size of the metal particles 125 and its particle size distribution are not limited, and can be configured according to various requirements; and the particle sizes of the metal particles 125 can be substantially the same or different from each other, and there is no limitation. The material of the metal particles 125 can be metal, alloy or a combination thereof, and there is no limitation; for example, copper. Thereby, through the metal particles 125 located on the inner wall 122 of the first connecting tube 12, more rough surfaces and voids can be manufactured on the inner wall 122. The circulating fluid 120 in the liquid phase can thus form more heterogeneous interfaces on these rough surfaces and voids, which is more conducive to heterogeneous nucleation and the formation of more bubbles 121. In addition, in some embodiments, the stacking height of the metal particles 125 (such as the Y direction of FIG. 8B ) can also be configured according to various requirements; for example, in FIG. 8B , the side of the inner wall 122 close to the outlet 201 (see FIG. 1 ) (i.e., the side close to the -Z direction of FIG. 8B ) is provided with metal particles 125 with a higher stacking height, so that more liquid phase circulating fluid 120 can be heterogeneously nucleated upon entering the first connecting pipe 12. Therefore, the liquid phase circulating fluid 120 can further quickly form bubbles 121 and better cool the circulating fluid 120 from the chip device 2 (see FIG. 1 ).
再舉例而言，在圖8C，上述連通管擾動部123為鰭片126。鰭片126可為一個或多個鰭片126，並未限制；例如可為鰭片126之陣列(如圖8C所示)。鰭片126之延伸方向亦未限制。例如，在圖8C，多個鰭片126沿排列方向(例如圖8C之+Z方向或流動方向D2)排列，且各鰭片126之延伸方向(例如圖8C之+Y方向)實質垂直於循環流體120的流動方向D2。或例如，多個鰭片126沿排列方向(例如為第一連通管12之內壁122的圓周方向)排列，且各鰭片126之延伸方向(例如為圖8C之+Z方向)實質平行於循環流體120的流動方向(例如為圖8C之+Z方向或流動方向D2)。亦即，鰭片126之長度(如圖8C之Z方向)、厚度(如圖8C之X方向)及高度(如圖8C之Y方向)均未限制，而可依照各種需求進行配置；且各鰭片126之長度、厚度及高度可為彼此實質相同或不同，亦未限制。各鰭片126之間的間距(pitch)亦未限制。鰭片126之材料可為金屬、合金或其組合，並未限制。藉此，透過位於第一連通管12之內壁122上的鰭片126，可在內壁122上製造更多粗糙表面及空隙。液相的循環流體120可因而在該些粗糙表面及空隙形成更多的異相界面，更有利於異相成核並形成更多的氣泡121。此外，在一些實施例中，鰭片126之高度可依照各種需求進行配置；例如在圖8C，內壁122之靠近出口201(見於圖1)的一側(即圖8C之靠近-Z方向的一側)設置有高度(如圖8C之Y方向)較高的鰭片126，而使得更多的液相的循環流體120在一進入第一連通管12即異相成核。因此，液相的循環流體120可更快速形成氣泡121，並更佳地冷卻來自晶片裝置2(見於圖1)的循環流體120。
For another example, in FIG8C , the connecting pipe disturbance portion 123 is a fin 126. The fin 126 may be one or more fins 126, without limitation; for example, it may be an array of fins 126 (as shown in FIG8C ). The extension direction of the fin 126 is also not limited. For example, in FIG8C , a plurality of fins 126 are arranged along an arrangement direction (e.g., the +Z direction of FIG8C or the flow direction D2), and the extension direction of each fin 126 (e.g., the +Y direction of FIG8C ) is substantially perpendicular to the flow direction D2 of the circulating fluid 120. Or for example, a plurality of fins 126 are arranged along an arrangement direction (e.g., the circumferential direction of the inner wall 122 of the first communication tube 12), and the extension direction of each fin 126 (e.g., the +Z direction of FIG. 8C ) is substantially parallel to the flow direction of the circulating fluid 120 (e.g., the +Z direction of FIG. 8C or the flow direction D2). That is, the length (e.g., the Z direction of FIG. 8C ), thickness (e.g., the X direction of FIG. 8C ) and height (e.g., the Y direction of FIG. 8C ) of the fin 126 are not limited, and can be configured according to various requirements; and the length, thickness and height of each fin 126 can be substantially the same or different from each other, and are not limited. The pitch between each fin 126 is also not limited. The material of the fin 126 can be metal, alloy or a combination thereof, and is not limited. Thus, more rough surfaces and gaps can be created on the inner wall 122 through the fins 126 located on the inner wall 122 of the first connecting tube 12. The circulating fluid 120 in the liquid phase can thus form more heterogeneous interfaces on these rough surfaces and gaps, which is more conducive to heterogeneous nucleation and the formation of more bubbles 121. In addition, in some embodiments, the height of the fins 126 can be configured according to various requirements; for example, in FIG8C, a fin 126 with a higher height (such as the Y direction of FIG8C) is provided on one side of the inner wall 122 close to the outlet 201 (seen in FIG1) (i.e., the side close to the -Z direction of FIG8C), so that more liquid circulating fluid 120 can heterogeneously nucleate as soon as it enters the first connecting tube 12. Therefore, the circulating fluid 120 in the liquid phase can form bubbles 121 more quickly and better cool the circulating fluid 120 from the chip device 2 (see FIG. 1 ).
請再參考圖1，依據一些實施例，浸潤式冷卻系統1還包含冷卻裝置17，該冷卻裝置17位於晶片裝置2之遠離主板20的一側，例如冷卻裝置17位於封蓋22之遠離主板20的一側。冷卻裝置17可為任何具有熱交換功能的裝置，例如冷卻板(boiler plate)。冷卻裝置17之材料可為任何具有導熱功能的材料，並未限制；例如可為金屬、合金或其組合。因此，透過將冷卻裝置17實質接觸晶片裝置2及/或其晶片21，冷卻裝置17可更充分地與晶片裝置2及/或其晶片21進行熱交換。甚至，在一些實施例中，冷卻裝置17的一側(例如靠近主板20的一側)實質接觸晶片裝置2及/或其晶片21，冷卻裝置17的另一側(例如遠離主板20的一側)同時實質接觸液相工作流體101。藉此，冷卻裝置17可將晶片裝置2及/或其晶片21的熱量更直接且快速地移除至液相工作流體101，以更有效地冷卻晶片裝置2及/或其晶片21。
Please refer to FIG. 1 again. According to some embodiments, the immersion cooling system 1 further includes a cooling device 17, which is located on a side of the chip device 2 away from the mainboard 20, for example, the cooling device 17 is located on a side of the cover 22 away from the mainboard 20. The cooling device 17 can be any device with a heat exchange function, such as a boiler plate. The material of the cooling device 17 can be any material with a heat conductive function, without limitation; for example, it can be a metal, an alloy or a combination thereof. Therefore, by physically contacting the cooling device 17 with the chip device 2 and/or its chip 21, the cooling device 17 can more fully exchange heat with the chip device 2 and/or its chip 21. Even in some embodiments, one side of the cooling device 17 (e.g., the side close to the mainboard 20) is in physical contact with the chip device 2 and/or its chip 21, and the other side of the cooling device 17 (e.g., the side away from the mainboard 20) is in physical contact with the liquid working fluid 101. In this way, the cooling device 17 can remove the heat of the chip device 2 and/or its chip 21 more directly and quickly to the liquid working fluid 101, so as to cool the chip device 2 and/or its chip 21 more effectively.
舉例而言，請同時參考圖1、圖9A至圖9C，圖9A至圖9C分別繪示依據一些實施例，冷卻裝置17之剖面結構示意圖。在圖1，冷卻裝置17具有冷卻表面170(見於圖9A至圖9C)，冷卻表面170位於冷卻裝置17之遠離主板20的一側。冷卻裝置17包含冷卻擾動部171，冷卻擾動部171位於冷卻表面170上(見於圖9A至圖9C)。冷卻擾動部171例如為網格172(見於圖9A)、金屬顆粒173(見於圖9B)、鰭片174(見於圖9C)或其組合(容後詳述)。亦即，冷卻擾動部171可為同時包含前述二者或三者之組合，例如同時包含網格172及金屬顆粒173之組合、同時包含網格172及鰭片174之組合、同時包含金屬顆粒173與鰭片174之組合、或同時包含網格172、金屬顆粒173及鰭片174之組合。透過位於冷卻裝置17之冷卻表
面170上的冷卻擾動部171，液相工作流體101在流經冷卻表面170附近時，會在液相工作流體101(液體)與冷卻擾動部171(例如固體)之間的異相界面(例如液體表面與固體表面之間)進一步異相成核並形成氣泡103(即氣相工作流體)，而可更佳地冷卻液相工作流體101。
For example, please refer to FIG. 1 and FIG. 9A to FIG. 9C at the same time. FIG. 9A to FIG. 9C respectively show schematic cross-sectional structural diagrams of the cooling device 17 according to some embodiments. In FIG. 1 , the cooling device 17 has a cooling surface 170 (see FIG. 9A to FIG. 9C ), and the cooling surface 170 is located on a side of the cooling device 17 away from the motherboard 20. The cooling device 17 includes a cooling disturbance portion 171, and the cooling disturbance portion 171 is located on the cooling surface 170 (see FIG. 9A to FIG. 9C ). The cooling and perturbation part 171 is, for example, a mesh 172 (shown in FIG. 9A ), metal particles 173 (shown in FIG. 9B ), fins 174 (shown in FIG. 9C ), or a combination thereof (described in detail later). That is, the cooling and perturbation part 171 may be a combination of two or three of the aforementioned, for example, a combination of the mesh 172 and metal particles 173, a combination of the mesh 172 and fins 174, a combination of the metal particles 173 and fins 174, or a combination of the mesh 172, metal particles 173, and fins 174. Through the cooling disturbance part 171 located on the cooling surface 170 of the cooling device 17, when the liquid-phase working fluid 101 flows near the cooling surface 170, it will further heterogeneously nucleate and form bubbles 103 (i.e., gas-phase working fluid) at the heterogeneous interface (e.g., between the liquid surface and the solid surface) between the liquid-phase working fluid 101 (liquid) and the cooling disturbance part 171 (e.g., solid), thereby better cooling the liquid-phase working fluid 101.
舉例而言，在圖9A，上述冷卻擾動部171為網格172。網格172可為一層或多層網格172，並未限制；例如在圖9A，網格172為四至五層網格172。網格172之篩孔及目數(即單位面積的網孔數)均未限制，而可依照各種需求進行配置。網格172之材料可為金屬、合金或其組合，亦未限制。藉此，透過位於冷卻裝置17之冷卻表面170上的網格172，可在冷卻表面170上製造更多粗糙表面及空隙。液相工作流體101可因而在該些粗糙表面及空隙形成更多的異相界面，更有利於異相成核並形成更多的氣泡103。
For example, in FIG. 9A , the cooling disturbance part 171 is a grid 172. The grid 172 may be one layer or multiple layers of grid 172, without limitation; for example, in FIG. 9A , the grid 172 is four to five layers of grid 172. The mesh size and mesh number (i.e., the number of mesh holes per unit area) of the grid 172 are not limited, and can be configured according to various requirements. The material of the grid 172 may be metal, alloy, or a combination thereof, without limitation. Thus, more rough surfaces and gaps can be created on the cooling surface 170 through the grid 172 located on the cooling surface 170 of the cooling device 17. The liquid-phase working fluid 101 can thus form more heterogeneous interfaces on these rough surfaces and gaps, which is more conducive to heterogeneous nucleation and the formation of more bubbles 103.
再舉例而言，在圖9B，上述冷卻擾動部171為金屬顆粒173。金屬顆粒173之粒徑及其粒徑分布均未限制，而可依照各種需求進行配置；且各金屬顆粒173之粒徑可為彼此實質相同或不同，亦未限制。金屬顆粒173之材料可為金屬、合金或其組合，並未限制；例如為銅。藉此，透過位於冷卻裝置17之冷卻表面170上的金屬顆粒173，可在冷卻表面170上製造更多粗糙表面及空隙。液相工作流體101可因而在該些粗糙表面及空隙形成更多的異相界面，更有利於異相成核並形成更多的氣泡103。此外，在一些實施例中，金屬顆粒173之堆疊高度(如圖9B之Y方向)亦可依照各種需求進行配置；例如在圖9B，冷卻表面170之靠近重力方向(例如圖9B之-Z方向)的一側設置有堆疊高度較高的金屬顆粒173，而使得液
相工作流體101在冷卻表面170之靠近重力方向的一側(即遠離氣泡103之移動方向的一側)即異相成核。因此，液相工作流體101可進而形成更多的氣泡103；甚至，此些氣泡103可在移動至液相工作流體101之液面的過程中，再彼此結合，進而能移除更多的熱量。基此，冷卻擾動部171可更大範圍且更有效地冷卻液相工作流體101。
For another example, in FIG. 9B , the cooling disturbance part 171 is a metal particle 173. The particle size of the metal particles 173 and its particle size distribution are not limited, and can be configured according to various requirements; and the particle sizes of each metal particle 173 can be substantially the same or different from each other, and there is no limitation. The material of the metal particles 173 can be metal, alloy or a combination thereof, and there is no limitation; for example, copper. Thereby, more rough surfaces and gaps can be produced on the cooling surface 170 through the metal particles 173 located on the cooling surface 170 of the cooling device 17. The liquid-phase working fluid 101 can thus form more heterogeneous interfaces on these rough surfaces and gaps, which is more conducive to heterogeneous nucleation and the formation of more bubbles 103. In addition, in some embodiments, the stacking height of the metal particles 173 (such as the Y direction of FIG. 9B ) can also be configured according to various requirements; for example, in FIG. 9B , the side of the cooling surface 170 close to the gravity direction (such as the -Z direction of FIG. 9B ) is provided with metal particles 173 with a higher stacking height, so that the liquid-phase working fluid 101 is heterogeneously nucleated on the side of the cooling surface 170 close to the gravity direction (i.e., the side away from the moving direction of the bubbles 103). Therefore, the liquid-phase working fluid 101 can further form more bubbles 103; even, these bubbles 103 can be combined with each other in the process of moving to the liquid surface of the liquid-phase working fluid 101, thereby removing more heat. Based on this, the cooling disturbance part 171 can cool the liquid working fluid 101 in a larger range and more effectively.
再舉例而言，在圖9C，上述冷卻擾動部171為鰭片174。鰭片174可為一個或多個鰭片174，並未限制；例如可為鰭片174之陣列(如圖9C所示)。鰭片174之延伸方向亦未限制。例如，在圖9C，多個鰭片174沿排列方向(例如圖9C之+Z方向)排列，且各鰭片174之延伸方向(例如圖9C之+Y方向)實質垂直於液相工作流體101的流動方向(例如圖9C之+Z方向)；或例如，多個鰭片174沿排列方向(例如為圖9C之X方向)排列，且各鰭片174之延伸方向(例如為圖9C之+Z方向)實質平行於液相工作流體101的流動方向(例如為圖9C之+Z方向)。亦即，鰭片174之長度(如圖9C之Z方向)、厚度(如圖9C之X方向)及高度(如圖9C之Y方向)均未限制，而可依照各種需求進行配置；且各鰭片174之長度、厚度及高度可為彼此實質相同或不同，亦未限制。各鰭片174之間的間距亦未限制。鰭片174之材料可為金屬、合金或其組合，並未限制。藉此，透過位於冷卻裝置17之冷卻表面170上的鰭片174，可在冷卻表面170上製造更多粗糙表面及空隙。液相工作流體101可因而在該些粗糙表面及空隙形成更多的異相界面，更有利於異相成核並形成更多的氣泡103。此外，在一些實施例中，鰭片174之高度可依照各種需求進行配置；例如在圖9C，冷卻表面170之靠近重力方向(例如圖9C之-Z方向)的一側設置有高度(如圖9C
之Y方向)較高的鰭片174，而使得液相工作流體101在冷卻表面170之靠近重力方向的一側(即遠離氣泡103之移動方向的一側)即異相成核。因此，液相工作流體101可進而形成更多的氣泡103；甚至，此些氣泡103可在移動至液相工作流體101之液面的過程中，再彼此結合成更大的氣泡103，進而能移除更多的熱量。基此，冷卻擾動部171可更大範圍且更有效地冷卻液相工作流體101。
For another example, in FIG9C , the cooling disturbance part 171 is a fin 174. The fin 174 may be one or more fins 174 without limitation; for example, it may be an array of fins 174 (as shown in FIG9C ). The extension direction of the fin 174 is also not limited. For example, in FIG. 9C , a plurality of fins 174 are arranged along an arrangement direction (e.g., the +Z direction of FIG. 9C ), and the extension direction of each fin 174 (e.g., the +Y direction of FIG. 9C ) is substantially perpendicular to the flow direction of the liquid-phase working fluid 101 (e.g., the +Z direction of FIG. 9C ); or, for example, a plurality of fins 174 are arranged along an arrangement direction (e.g., the X direction of FIG. 9C ), and the extension direction of each fin 174 (e.g., the +Z direction of FIG. 9C ) is substantially parallel to the flow direction of the liquid-phase working fluid 101 (e.g., the +Z direction of FIG. 9C ). That is, the length (e.g., the Z direction of FIG. 9C ), thickness (e.g., the X direction of FIG. 9C ) and height (e.g., the Y direction of FIG. 9C ) of the fin 174 are not limited, and can be configured according to various requirements; and the length, thickness and height of each fin 174 can be substantially the same or different from each other, and are not limited. The distance between the fins 174 is not limited. The material of the fins 174 can be metal, alloy or a combination thereof, and is not limited. In this way, more rough surfaces and gaps can be produced on the cooling surface 170 through the fins 174 located on the cooling surface 170 of the cooling device 17. The liquid working fluid 101 can thus form more heterogeneous interfaces on these rough surfaces and gaps, which is more conducive to heterogeneous nucleation and the formation of more bubbles 103. In addition, in some embodiments, the height of the fin 174 can be configured according to various requirements; for example, in FIG. 9C , a fin 174 with a higher height (such as the Y direction of FIG. 9C ) is provided on the side of the cooling surface 170 close to the gravity direction (such as the -Z direction of FIG. 9C ), so that the liquid working fluid 101 is heterogeneously nucleated on the side of the cooling surface 170 close to the gravity direction (i.e., the side away from the moving direction of the bubble 103). Therefore, the liquid working fluid 101 can further form more bubbles 103; even, these bubbles 103 can be combined with each other to form larger bubbles 103 in the process of moving to the liquid surface of the liquid working fluid 101, thereby removing more heat. Based on this, the cooling disturbance part 171 can cool the liquid working fluid 101 in a larger range and more effectively.
綜合以上，在一些實施例中，透過將晶片裝置與同樣位於系統(或其工作槽)內部的冷卻管路(例如微流管裝置、第一連通管以及第一熱交換裝置)連通，浸潤式冷卻系統可避免再將冷卻管路連通至系統(或其工作槽)外部。因此，在一些實施例中，浸潤式冷卻系統透過位於系統內部而較短的冷卻管路(故僅需消耗較低的泵送功率)，即可達到相當於(甚至是更優於)先前技術的冷卻效能。
In summary, in some embodiments, by connecting the chip device to the cooling pipeline (such as the microfluidic device, the first connecting pipe and the first heat exchange device) which is also located inside the system (or its working tank), the immersion cooling system can avoid connecting the cooling pipeline to the outside of the system (or its working tank). Therefore, in some embodiments, the immersion cooling system can achieve cooling performance equivalent to (or even better than) the previous technology through a shorter cooling pipeline located inside the system (so it only consumes lower pumping power).
1:浸潤式冷卻系統
1: Immersion cooling system
10:工作槽
10: Work slot
101:液相工作流體
101: Liquid working fluid
102:混合氣相流體
102: Mixed gas phase fluid
103:氣泡
103: Bubbles
11:微流管裝置
11: Microfluidic device
110,110’:第一微流管
110,110’: First microfluidic tube
111,111’:第二微流管
111,111’: Second microfluidic tube
12:第一連通管
12: First connecting pipe
120:循環流體
120: Circulating fluid
121:氣泡
121: Bubbles
122:內壁
122: Inner wall
123:連通管擾動部
123: Connecting pipe disturbance part
124:網格
124: Grid
125:金屬顆粒
125:Metal particles
126:鰭片
126: Fins
127:第一主流管
127: First main pipe
128,128’:第一次流管
128,128’: First flow pipe
13:第一熱交換裝置
13: First heat exchange device
130:隔板
130: Partition
131:熱交換流道
131: Heat exchange channel
14:第二連通管
14: Second connecting pipe
140:第二主流管
140: Second main pipe
141,141’:第二次流管
141,141’: Second flow tube
15:泵浦
15: Pumping
16:第三連通管
16: The third connecting pipe
17:冷卻裝置
17: Cooling device
170:冷卻表面
170: Cooling surface
171:冷卻擾動部
171: Cooling disturbance department
172:網格
172: Grid
173:金屬顆粒
173:Metal particles
174:鰭片
174: Fins
18:第二熱交換裝置
18: Second heat exchange device
180:冷凝器
180: Condenser
181:第一冷凝管
181: First condenser tube
182:冷凝泵浦
182: Condensation pump
183:第二冷凝管
183: Second condenser tube
184:熱交換器
184:Heat exchanger
185:第三冷凝管
185: The third condenser
2:晶片裝置
2: Chip device
20:主板
20: Motherboard
200,200’:入口
200,200’:Entrance
201,201’:出口
201,201’:Export
202:主表面
202: Main surface
21:晶片
21: Chip
22:封蓋
22: Capping
A:部分區域
A: Some areas
D0,D0’:流入方向
D0,D0’: Inflow direction
D1:堆疊方向
D1: Stacking direction
D2,D2’:流動方向
D2,D2’: Flow direction
L:流體區
L: Fluid zone
V:蒸氣區
V: Steam zone
X:座標之X軸
X: X-axis of coordinates
Y:座標之Y軸
Y: Y axis of coordinates
Z:座標之Z軸
Z: Z axis of coordinates
圖1繪示依據一些實施例，浸潤式冷卻系統之結構示意圖。
FIG1 is a schematic diagram showing the structure of an immersion cooling system according to some embodiments.
圖2繪示依據如圖1的浸潤式冷卻系統，其部分區域A之第二實施例之結構示意圖。
FIG2 is a schematic structural diagram of a second embodiment of a partial area A of the immersion cooling system shown in FIG1.
圖3繪示依據如圖1的浸潤式冷卻系統，其部分區域A之第三實施例之結構示意圖。
FIG3 is a schematic structural diagram of a third embodiment of a partial area A of the immersion cooling system shown in FIG1 .
圖4繪示依據如圖1的浸潤式冷卻系統，其部分區域A之第四實施例之結構示意圖。
FIG4 is a schematic structural diagram of a fourth embodiment of a partial area A of the immersion cooling system shown in FIG1 .
圖5繪示依據如圖1的浸潤式冷卻系統，其部分區域A之第五實施例之結構示意圖。
FIG5 is a schematic structural diagram of a fifth embodiment of a partial area A of the immersion cooling system shown in FIG1.
圖6繪示依據如圖1的浸潤式冷卻系統，其部分區域A之第六實施例之結構示意圖。
FIG6 is a schematic structural diagram of a sixth embodiment of a partial area A of the immersion cooling system shown in FIG1 .
圖7繪示依據如圖1的浸潤式冷卻系統，其部分區域A之第七實施例之結構示意圖。
FIG. 7 is a schematic structural diagram of a seventh embodiment of a partial area A of the immersion cooling system shown in FIG. 1 .
圖8A繪示依據一些實施例，第一連通管之剖面結構示意圖。
FIG8A shows a schematic diagram of the cross-sectional structure of the first connecting tube according to some embodiments.
圖8B繪示依據一些實施例，第一連通管之剖面結構示意圖。
FIG8B shows a schematic diagram of the cross-sectional structure of the first connecting tube according to some embodiments.
圖8C繪示依據一些實施例，第一連通管之剖面結構示意圖。
FIG8C shows a schematic diagram of the cross-sectional structure of the first connecting tube according to some embodiments.
圖9A繪示依據一些實施例，冷卻裝置之剖面結構示意圖。
FIG9A is a schematic diagram showing a cross-sectional structure of a cooling device according to some embodiments.
圖9B繪示依據一些實施例，冷卻裝置之剖面結構示意圖。
FIG9B shows a schematic diagram of a cross-sectional structure of a cooling device according to some embodiments.
圖9C繪示依據一些實施例，冷卻裝置之剖面結構示意圖。
FIG. 9C shows a schematic diagram of a cross-sectional structure of a cooling device according to some embodiments.