TWI856939B - Method for manufacturing base - Google Patents

Abstract

The present invention relates to a method for manufacturing a pedestal, wherein a cap-type sleeve structure or a tube-type structure is used in the bonding structure of a base substrate and an insulating plate, so that the pressure increase inside the gas flow path during the curing process can be withstood or the pressure increase can be prevented, thereby preventing the clogging of pores in a high-power pedestal for a high aspect ratio contact (HARC) process and the like, and reducing the pollution around the pores to minimize the generation of arcs.

Description

Method for manufacturing base

The present invention relates to a method for manufacturing a susceptor, and more particularly, to a method for manufacturing a susceptor capable of protecting cooling holes from being affected by an adhesive, and a susceptor manufactured by the method.

Typically, semiconductor devices or display devices are manufactured by stacking multiple thin film layers including dielectric layers and metal layers on a glass substrate, a flexible substrate, or a semiconductor wafer substrate, and then patterning them. These thin film layers are sequentially deposited on the substrate by a chemical vapor deposition (CVD) process or a physical vapor deposition (PVD) process. The CVD process includes a low pressure chemical vapor deposition (LPCVD) process, a plasma enhanced chemical vapor deposition (PECVD) process, a metal organic chemical vapor deposition (MOCVD) process, and the like.

In such a CVD apparatus and a PVD apparatus, a susceptor is provided, which supports a glass substrate, a flexible substrate, a semiconductor wafer substrate, etc. and processes a semiconductor process. The susceptor may have a suction cup electrode installed in the CVD apparatus and the PVD apparatus and used to support the substrate, and a heating wire used to heat the substrate in a heat treatment process, etc. Furthermore, the susceptor has a high frequency (RF) electrode instead of the heating wire or further has a high frequency (RF) electrode, and is used to form plasma in an etching process, etc. of a thin film layer located on the substrate.

In this pedestal, the base substrate and the insulating plate bonded thereto have a prescribed cooling structure so that the substrate on the insulating plate can be uniformly cooled using an external cooling gas. Usually, a cooling structure is provided so that a cooling gas flow path provided in the base substrate communicates with pores provided in the insulating plate. In the process of bonding such a base substrate and the insulating plate using a liquid adhesive, various attempts are made to prevent the adhesive from penetrating into the pores.

FIG. 1 is a diagram for explaining a conventional method of bonding a base substrate 20 and an insulating plate 13 of a base.

Referring to FIG. 1 , in a conventional base manufacturing process, when a liquid adhesive 12 is used to bond a base substrate 20 having a gas flow path 21 and an insulating plate 13 having air holes 3, an insulating bushing 40 is inserted into the end of the gas flow path 21 and an adhesive film 50 is covered thereon to perform a bonding process to prevent the liquid adhesive 12 from penetrating into the gas flow path 21, and then an appropriate process is further added to connect with the air holes 3.

However, when the base substrate 20 and the insulating plate 13 are bonded after applying the adhesive film 50, thermal curing is performed. At this time, the adhesive film 50 bulges due to thermal expansion, and thus cannot completely prevent the liquid adhesive 12 from penetrating into the gas flow path 21. Therefore, this structure may cause poor gas supply and generation of particles or arcs due to contamination around the pores. In particular, this problem is particularly serious in high-power bases used in high-aspect ratio contact (HARC) processes.

[Technical issues to be solved]

Therefore, the present invention is proposed to solve the above-mentioned problems. The purpose of the present invention is to provide a method for manufacturing a base and a base manufactured by the method. In the method, a cap-type sleeve structure or a tubular structure is used in the bonding structure of the base substrate and the insulating plate, so that the pressure increase inside the gas flow path during the curing process can be withstood or the pressure increase can be prevented, thereby preventing the clogging of pores in high-power bases for high aspect ratio contact (HARC) processes, etc., and reducing the pollution around the pores to minimize the generation of arcs. [Technical means for solving technical problems]

First, the features of the present invention are summarized as follows. In order to achieve the above-mentioned purpose, a manufacturing method of a base in one aspect of the present invention may include: an inserting step of inserting a cap-type sleeve structure into a groove formed at the end of a gas flow path extending to a pore of an insulating plate; a forming step of forming an adhesive layer around the cap-type sleeve structure using an adhesive; a bonding step of placing the base substrate on the adhesive layer and bonding it to the insulating plate so that the end of the gas flow path of the base substrate contacts the cap-type sleeve structure; and a processing step of processing in such a way that a through hole is formed in the cap-type sleeve structure on the lower side of the gas flow path of the base substrate.

Furthermore, a manufacturing method of a base according to another aspect of the present invention may include: an inserting step of inserting a tubular structure into a groove formed at the end of a gas flow path extending to an air hole of an insulating plate; a forming step of forming an adhesive layer using an adhesive so that its height is below the end height of the tubular structure; a bonding step of bonding a base substrate including an electrode layer on the adhesive layer and bonding by inserting the tubular structure into the gas flow path of the base substrate; and a removing step of removing the tubular structure.

In the step of inserting the tubular structure, a sleeve structure having a through hole may be first inserted into the groove, and then the tubular structure may be inserted into the inner side of the sleeve structure.

The sleeve structure can be made of the same material as the insulating plate, that is, made of ceramic material.

The sleeve structure may have a height extending above an end of the groove of the insulating plate.

The tubular structure may be made of plastic material.

The diameter of the tubular structure is preferably smaller than or equal to the diameter of the groove at the end of the gas flow path, and the gas flow path extends toward the air hole of the insulating plate.

The diameter of the tubular structure is preferably smaller than or equal to the diameter of the inner through hole of the sleeve structure.

Furthermore, a base according to another aspect of the present invention may include: a base substrate having a gas flow path for supplying cooling gas, an insulating plate fixed on the base substrate and having air holes, and a sleeve structure having through holes so that the gas flow path and the air holes are connected between the base substrate and the insulating plate; wherein the sleeve structure may include a screw taper formed on the inner wall of the through hole.

The screw taper can be used to tighten a tubular structure with screws to prevent adhesive penetration during the manufacturing process. [Effect of the invention]

According to the manufacturing method of the susceptor and the susceptor manufactured by the method of the present invention, a cap-type sleeve structure or a tubular structure is adopted in the bonding structure of the base substrate and the insulating plate, so that during the curing process, the pressure increase inside the gas flow path can be withstood or the increase of the pressure can be prevented, thereby preventing the clogging of pores in high-power susceptors used in high aspect ratio contact (HARC) processes, etc., and reducing the pollution around the pores to minimize the generation of arcs.

Hereinafter, the present invention will be described in detail with reference to the drawings. At this time, the same components in each drawing are represented by the same element symbols as much as possible. In addition, the description of known functions and/or structures will be omitted. The content disclosed below will mainly explain the parts required for understanding the operation of various embodiments, and omit the description of elements that may make the key points of the description unclear. In addition, some of the components in the drawings may be enlarged, omitted or schematically illustrated. The size of each component cannot fully reflect the actual size, therefore, the content recorded here is not limited by the relative size or spacing of the components shown in each figure.

When describing the embodiments of the present invention, if it is determined that a specific description of the known technology related to the present invention unnecessarily obscures the main idea of the present invention, its detailed description will be omitted. Furthermore, the terms described below are defined in consideration of the functions of the present invention and may vary according to the intention of the user, operator or precedent. Therefore, their definition should be based on the content of the entire specification. The terms used in this specification are only used to describe the embodiments of the present invention and are not used to limit them. Unless otherwise specified, a single quantity form shall include a plurality of quantity forms. The expressions "including" or "having" in this specification are used to refer to any features, numbers, steps, actions, components or combinations thereof, and should not be understood as excluding the existence or additional possibility of one or more other features, numbers, steps, actions, components or combinations thereof.

In addition, although the terms "first" and "second" can be used to describe various components, the components are not limited to the terms. The terms are only used to distinguish one component from another component.

First, in the present invention, the base is a semiconductor device used for processing various processing target substrates such as semiconductor wafers, glass substrates, flexible substrates, etc. In order to support the processing target substrate, it can have an electrostatic chuck electrode used as an electrostatic chuck, and it can also have a heating wire (or heating element) used for a heater in order to heat the processing target substrate to a specified temperature, or it can further have a high-frequency electrode or can replace the heating wire in order to perform a process such as plasma enhanced chemical vapor deposition on the processing target substrate.

Therefore, it is stated in advance that, as described below, the base of the present invention is a structure in which a base substrate including a gas flow path and an insulating plate including an electrode layer are bonded, and the electrode layer arranged on the insulating plate includes a conductor for realizing any one or more functions of the electrostatic suction cup electrode, high-frequency electrode or heating wire (or heating element) as described above.

FIG. 2 is a schematic cross-sectional view of a base 100 according to an embodiment of the present invention.

2, a base 100 according to an embodiment of the present invention includes a base substrate 200 and an insulating plate 300 bonded together by an adhesive 312. The base 100 is preferably circular, but in some cases, it can also be designed to be other shapes such as an ellipse, a quadrilateral, etc.

The base substrate 200 may be formed of a multi-layer structure including a plurality of metal layers. These metal layers may be bonded by a brazing process, a welding process, or a bonding process. The insulating plate 300 is fixed to the base substrate 200, and may be fixed to the base substrate 200 by using a prescribed fixing means or an adhesive/bonding means. The base substrate 200 and the insulating plate 300 may be bonded after being manufactured separately, and, depending on the circumstances, the structure of the insulating plate 300 may also be formed directly on the upper surface of the base substrate 200 using a ceramic sheet or the like.

As shown in FIG2 , the insulating plate 300 includes an electrode layer 320 located between ceramic materials, and the ceramic material is composed of ceramic sheets or powders. As an embodiment, the ceramic material can be made of a material selected from materials such as aluminum oxide (Al ₂ O ₃ ), aluminum nitride (AlN), silicon carbide (SiC), silicon nitride (Si ₃ N ₄ ), silicon dioxide (SiO ₂ ), barium oxide (BaO), zinc oxide (ZnO), cobalt oxide (CoO), tin oxide (SnO ₂ ), zirconium oxide (ZrO ₂ ), Y ₂ O ₃ , YAG, YAM, and YAP. The insulating plate 300 can be formed on the upper surface of the base substrate 200 by thermal spraying, bonding processes of ceramic sheets, etc. using the ceramic material as described above.

The electrode layer 320 can be made of a conductive metal material. As an example, the electrode layer 320 can be formed of at least one of silver (Ag), gold (Au), nickel (Ni), tungsten (W), molybdenum (Mo) and titanium (Ti), and more preferably, can be formed of tungsten (W). The electrode layer 320 can be formed using a thermal spraying process or a screen printing process. The electrode layer 320 has a thickness of about 1.0 μm to 100 μm. For example, preferably, when the electrode layer 320 is formed by a screen printing process, a thickness of 1.0~30 μm can be applied, and when the electrode layer 320 is formed by a thermal spraying process, a thickness of 30~100 μm can be applied. However, since it is difficult to form a too thin layer such as less than 1.0 μm in thickness of the electrode layer 320, it is not preferred. In addition, at this time, the resistance value increases due to the porosity and other defects in the electrode layer, and the electrostatic adsorption force may decrease as the resistance value increases, which is not preferred. In addition, when the thickness of the electrode layer 320 is too thick, such as exceeding 100 μm, arcing may occur, which is not preferred. Therefore, the thickness of the electrode layer 320 is preferably an appropriate value within the range of about 1.0 μm to 100 μm. The electrode layer 320 formed in this way can be, as an example, an electrostatic chuck electrode that can generate electrostatic force and chucking by receiving a bias when a substrate (not shown) placed on the upper part of the dielectric layer 330 is loaded, and when the substrate (not shown) is unloaded, it can perform de-chucking by applying an opposite bias to the electrode layer 320 to cause discharge.

However, this is not limited to the above, and depending on the circumstances, the electrode layer 320 may further include an electrode pattern for a heater or a high-frequency electrode pattern for generating plasma. In other words, the base 100 of the present invention, as a semiconductor device for processing a multi-purpose processing target substrate such as a semiconductor wafer, a glass substrate, a flexible substrate, etc., may have an electrostatic chuck electrode on the electrode layer 320 used as an electrostatic chuck to support the processing target substrate, and may further have a high-frequency electrode or may replace the heating wire to heat the processing target substrate to a specified temperature, or to perform a process such as plasma enhanced chemical vapor deposition on the processing target substrate.

When the base 100 is installed inside a chamber for a semiconductor process, in order to use external cooling gas to uniformly cool the substrate (e.g., a glass substrate, a flexible substrate, and a semiconductor wafer substrate, etc.) on the insulating plate 300, the base substrate 200 and the insulating plate 300 may have a prescribed cooling structure around the air hole 30 as shown in FIG. 3 .

Fig. 3 is an enlarged cross-sectional view of the AA portion of Fig. 2 in which the upper and lower positions are reversed. As described below, the base substrate 200 is placed on the insulating plate 300 and is shown in an inverted position to match the process during bonding.

Referring to FIG. 3 , for example, in order to supply cooling gas, as shown in FIG. 2 , a cooling gas flow path 15 is provided in an appropriate pattern inside the base substrate 200, and through the sleeve structure 400 for preventing the penetration of the adhesive 312 in the manufacturing process of the present invention (see the cap-type sleeve structure 410 in FIG. 4 c or the sleeve structure 420 in FIG. 5 c ), the through hole of the cooling gas flow path 15 and the (cooling) air hole 30 of the insulating plate 300 are fluidly connected, so that the cooling gas can be ejected from the (cooling) air hole 30, thereby uniformly cooling the substrate on the insulating plate 300. At this time, the cooling gas can mainly use helium (He), but it is not necessarily limited to this, and a variety of suitable gases can be used. The (cooling) air holes 30 of the insulating plate 300 may be formed in an appropriate number according to the design.

In Fig. 2, a predetermined electrode rod 281 provided through a hole 280 at the bottom of the base 100 may be used to apply, for example, chucking and de-chucking or to heat or provide a high-frequency bias to the electrode layer 320. According to the design, an appropriate number of (cooling) air holes 30 may be formed between the predetermined electrode patterns forming the electrode layer 320, and the (cooling) air holes 30 may be formed to partially realize fluid communication from the cooling gas flow path 15 to the upper surface of the insulating plate 300 through the sleeve structure 400.

4a to 4d are cross-sectional views of the pore portion in each process for explaining the manufacturing process of the base 100 according to an embodiment of the present invention.

Referring to FIG. 4a, in one embodiment of the present invention, in order to manufacture the base 100 having the (cooling) air hole 30, first, an insulating plate 300 is prepared in which a groove 290 is pre-formed, the groove 290 being formed at the end of the cooling gas flow path 15, the gas flow path extending toward the air hole 30 of the insulating plate 300 for supplying cooling gas. At this time, preferably, the insulating plate 300 has the air hole 30 pre-processed at a necessary position and the gas flow path extending from the air hole 30 to the groove 290. For processing such air hole 30 and gas flow path, laser processing of a machining center (MCT) or the like can be used, and a hole with a diameter of 1 mm or less or several mm or less can be processed.

Next, the manufacturing process of the base 100 can be implemented on a prescribed workbench, but will not be described in detail, and in order to prevent the air hole 30 from being contaminated when the insulating plate 300 is placed on the workbench, the lower side of the insulating plate 300 in the figure is preferably protected with an adhesive film.

A cap-type bushing structure 410 is inserted into the groove 290 of the insulating plate 300. The cap-type bushing structure 410 is closed at the top and opened at the bottom to the air hole 30 in the figure. Preferably, the cap-type bushing structure 410 is made to have a height higher than the height extending above the end of the groove 290 of the insulating plate 300, and is inserted into the groove 290. The cap-type bushing structure 410 can be made of a heat-resistant, wear-resistant insulator, metal, or ceramic material, and preferably, can be the same material as the ceramic material of the insulating plate 300 as described above.

Furthermore, referring to FIG. 4b, after the cap-type bushing structure 410 is inserted into the groove 290 of the insulating plate 300, a (liquid) adhesive 312 such as silicone paste is used to form an adhesive layer around the cap-type bushing structure 410 (i.e., the side and the top thereof). At this time, when the adhesive 312 is applied to the cap-type bushing structure 410, the adhesive 312 removal process can also be performed by a flattening process, so that the adhesive 312 remains only below the height of the cap-type bushing structure 410. The adhesive 312 is preferably made of a material having an insulation strength of 25 kV/mm or more and a volume resistance of 10 ¹⁵ Ωcm or more, so as to facilitate arc prevention.

Next, referring to FIG. 4c, after forming an adhesive layer around the cap sleeve structure 410 using the adhesive 312, the base substrate 200 is placed on the adhesive layer formed by the adhesive 312. At this time, the base substrate 200 is placed on the adhesive layer of the adhesive 312 and bonded to the insulating plate 300, so that the end of the cooling gas flow path 15 of the base substrate 200 contacts the cap sleeve structure 410 (preferably so that the center coincides). When the cap sleeve structure 410 is placed in multiple positions, each cap sleeve structure 410 and each cooling gas flow path 15 of the corresponding base substrate 200 contacts each other and bonds to the insulating plate 300. During bonding, after the base substrate 200 is set as described above, the base substrate 200 and the insulating plate 300 are pressed and thermally cured, thereby firmly bonding the base substrate 200 and the insulating plate 300. At this time, by pressing, the adhesive 312 on the cap-type bushing structure 410 is pressed and thinned to be substantially non-existent.

Next, referring to FIG. 4d, the cap-type sleeve structure 410 on the lower side of the cooling gas flow path 15 of the base substrate 200 is processed to form a through hole 411. For example, the through hole 411 can be processed by a machining center (MCT) laser processing, etc., so that it can be processed into a hole with a diameter of less than several mm, or preferably, it can be processed into a hole with a diameter of less than 1 mm. In this way, the cooling gas flow path 15 of the base substrate 200 and the air hole 30 of the insulating plate 300 can be fluidly connected.

In the present invention, after the base substrate 200 is bonded to the cap-type sleeve structure 410 in the above-mentioned manner, the cap-type sleeve structure 410 is used by processing the through hole 411, so that during the pressing and heat curing process, the fluid connection with the air hole 30 can be prevented from being blocked by preventing the adhesive 312 from flowing into the cooling gas flow path 15. In addition, since the structure is not covered with an adhesive film 50, it can fully withstand the increase in pressure inside the gas flow path without bulging, thereby preventing the air hole 30 from being blocked.

5a to 5c are cross-sectional views of a pore portion in each process for explaining a manufacturing process of a base 100 according to another embodiment of the present invention.

Referring to FIG. 5a, in one embodiment of the present invention, in order to manufacture the base 100 having the (cooling) air hole 30, first, an insulating plate 300 is prepared in which a groove 290 is pre-formed at the end of the cooling gas flow path 15, and the gas flow path extends toward the air hole 30 of the insulating plate 300 for supplying cooling gas. At this time, preferably, the insulating plate 300 has the air hole 30 pre-processed at a necessary position. For processing such an air hole 30, laser processing by a machining center (MCT) or the like can be used, and a hole with a diameter of less than 1 mm or less than several mm can be processed.

Hereinafter, similarly, the manufacturing process of the base 100 can be implemented on a prescribed workbench, but will not be described in detail, and, in order to prevent contamination of the air hole 30 when the insulating plate 300 is placed on the workbench, the lower side of the insulating plate 300 in the figure is preferably protected with an adhesive film.

A sleeve structure 420 having through holes opened at the top and bottom to the air hole 30 is inserted into the groove 290 of the insulating plate 300, and a tubular structure 520 is further inserted inside the sleeve structure 420. Preferably, the sleeve structure 420 having the through hole is made to have a height higher than the height extending above the end of the groove 290 of the insulating plate 300, and is inserted into the groove 290. However, the sleeve structure 420 is not absolutely necessary and can be omitted. In other words, the tubular structure 520 can be directly inserted into the groove 290 of the insulating plate 300.

Although it is not necessary to provide a screw tap (female thread) on the inner side of the groove 290 of the insulating plate 300, if necessary, a screw tap (female thread) can be provided on the inner side of the groove 290 of the insulating plate 300. For example, as shown in the embodiment of FIG. 6 , a screw tap (female thread) structure can be formed using the inner side of the groove 290 of the insulating plate 300. At this time, the screw tap on the inner side of the groove 290 of the insulating plate 300 is tightened with the screw tap (male thread) of the sleeve structure 420 or the tubular structure 520 inserted therein in a screw-tightening manner.

When the sleeve structure 420 is inserted into the groove 290 of the insulating plate 300, it can be fixed with an organic silicon adhesive or the like. In other words, when the tubular structure 520 is directly inserted into the groove 290 of the insulating plate 300 without using the sleeve structure 420, if there is no screw tap formed inside the groove 290, the tubular structure 520 with or without a screw tap can also be directly fixed in the groove 290 of the insulating plate 300 with an organic silicon adhesive or the like. Alternatively, if there is a screw tap formed inside the groove 290, the screw tap formed inside the groove 290 can be screwed with the screw tap (male thread) of the tubular structure 520.

Furthermore, when the sleeve structure 420 is used, if there is no screw tap formed inside the groove 290, the sleeve structure 420 with or without a screw tap (male thread) can be directly fixed in the groove 290 of the insulating plate 300 using an organic silicon adhesive or the like. At this time, if there is a screw tap formed inside the groove 290 (see FIG. 6 ), it can be screwed and fastened with the screw tap (male thread) of the sleeve structure 420. In this way, after the sleeve structure 420 is inserted into the groove 290, the tubular structure 520 is further inserted into the inner side (inner wall) of the sleeve structure 420. At this time, it is preferred to use the screw taper (female thread) formed on the inner side of the sleeve structure 420 and the screw taper (male thread) of the tubular structure 520 to tighten.

The tubular structure 520 may be made of a flexible material. When the tubular structure 520 is directly inserted into the groove 290 of the insulating plate 300, the diameter of the tubular structure 520 is preferably less than or equal to the diameter of the groove 290 of the insulating plate 300. Furthermore, when the sleeve structure 420 is used, the diameter of the tubular structure 520 is preferably less than or equal to the diameter of the through hole of the sleeve structure 420. Thus, in the subsequent manufacturing process, the (liquid) adhesive 312 can be prevented from penetrating between the sleeve structure 420 and the tubular structure 520.

Furthermore, the tubular structure 520 is manufactured to have a height higher than the height extending above the end of the sleeve structure 420 in the figure, and is inserted into the sleeve structure 420. For example, the height of the tubular structure 520 may be more than 5 times the height of the sleeve structure 420. For example, when the height of the sleeve structure 420 is 5 mm, the height of the tubular structure 520 may be 40±10 mm. In a prescribed jig, a number of such tubular structures 520 corresponding to the plurality of grooves 290 may be prepared in advance, so that the tubular structure 520 can be inserted into the corresponding position.

The sleeve structure 420 can be made of heat-resistant, wear-resistant insulators, metals or ceramic materials, etc., preferably, it can be the same material as the ceramic material of the insulating plate 300 described above. The tubular structure 520 can be made of a variety of materials such as a heat-resistant flexible insulating material, for example, a flexible plastic material (such as engineering plastics such as polyetherimide (ULTEM)). The tubular structure 520 formed of engineering plastics can have heat resistance so that it does not deform in shape under temperature conditions above 170°C, and does not deform in shape at the thermal curing temperature described above (such as below 150°C).

Furthermore, referring to FIG. 5b, in the groove 290 of the insulating plate 300, after inserting only the tubular structure 520 or inserting the sleeve structure 420 and the tubular structure 520, a (liquid) adhesive 312 such as silicone paste is used to form an adhesive layer, wherein the thickness of the adhesive layer is less than the height of the sleeve structure 420 (in the case of using the sleeve structure 420), and the adhesive 312 is used to form an adhesive layer having a thickness below the height of the uppermost end of the tubular structure 520. The adhesive 312 is preferably made of a material having an insulation strength of 25 kV/mm or more and a volume resistance of 10 ¹⁵ Ωcm or more, so as to facilitate arc prevention.

Next, the base substrate 200 is placed on the adhesive layer formed by the adhesive 312, and the tubular structure 520 is inserted into the cooling gas flow path 15 of the base substrate 200, so that the multiple upper ends of the sleeve structure 420 are located in the multiple grooves 190 at the lower end of the cooling gas flow path 15, thereby preparing for bonding. At this time, preferably, the height of the uppermost end of the tubular structure 520 is designed to be able to rise above the upper end surface of the base substrate 200. In Figures 5a and 6, if the sleeve structure 420 is not used, the multiple grooves 190 at the lower end of the cooling gas flow path 15 may not be formed.

Subsequently, referring to FIG. 5c, the base substrate 200 and the insulating plate 300 are pressed and heat cured, thereby firmly bonding the base substrate 200 and the insulating plate 300. After the base substrate 200 and the insulating plate 300 are firmly bonded, the tubular structure 520 is removed. The tubular structure 520 is removed as follows: by rotating in the opposite direction of the screw tightening with the sleeve structure 420, the groove 290 of the insulating plate 300 or the sleeve structure 420 is separated and removed. In FIG. 5a and FIG. 6, even if the sleeve structure 420 is not used, when removing the tubular structure 520, it can be separated from the adhesive 312 by applying an appropriate torsional force, etc., so as to remove the tubular structure 520.

In this way, by using the tubular structure 520, or by using the sleeve structure 420 and the tubular structure 520, during the pressing and heat curing process, the adhesive 312 is prevented from penetrating into the cooling gas flow path 15, thereby preventing the fluid connection with the air hole 30 from being blocked. Moreover, instead of a conventional structure covered with an adhesive film, the tubular structure 520, which is higher than the sleeve structure 420, allows air connection, thereby preventing an increase in pressure inside the gas flow path, thereby enabling the pressing and heat curing to be performed stably.

Thus, the shape of the base 100 of the present invention manufactured according to FIGS. 5a to 5c and 6 is as follows: the insulating plate 300 is placed on the base substrate 200, based on the situation where the base 100 is installed inside a chamber for a semiconductor process as shown in FIG. 2.

At this time, the base 100 of the present invention includes: a base substrate 200 having a cooling gas flow path 15 for supplying cooling gas; an insulating plate 300 fixed to the base substrate 200 and having air holes 30; and a sleeve structure 420 having a through hole so that the cooling gas flow path 15 and the air holes 30 are connected between the base substrate 200 and the insulating plate 300. As described above, preferably, a screw tap is formed on the inner wall of the through hole of the sleeve structure 420. The purpose of the screw tap on the inner wall of the through hole of the sleeve structure 420 can be to be screwed and fastened with the tubular structure 520 for preventing adhesive penetration in the manufacturing process as described above. In addition, the outer side (outer wall) of the sleeve structure 420 and the inner side (inner wall) of the groove 290 of the insulating plate 300 may also be formed with screw tapers, etc., and the above-mentioned embodiments are also applicable here.

As described above, according to the manufacturing method of the base 100 of the present invention, by adopting the cap-type sleeve structure 410 or the tubular structure 520 inserted into the cap-type sleeve structure 410 in the bonding structure of the base substrate 200 and the insulating plate 300, the increase in pressure inside the gas flow path can be withstood or the increase in the pressure can be prevented during the curing process, thereby preventing the clogging of pores in high-power bases used in high aspect ratio contact (HARC) processes, and reducing the contamination around the pores to minimize the generation of arcs.

As mentioned above, in the present invention, specific matters such as specific constituent elements and limited embodiments and drawings have been described, but this is only provided to help understand the present invention as a whole, and the present invention is not limited to the embodiments, and ordinary technicians in the field to which the present invention belongs can make various modifications and changes within the scope of the essential characteristics of the present invention. Therefore, the spirit of the present invention should not be limited to the described embodiments and it is determined that, in addition to the attached application scope, all technical ideas that are equivalent to or equivalent to the application scope should be interpreted as included in the scope of the present invention.

3: air hole 12: liquid adhesive 13: insulating plate 15: cooling gas flow path 20: base substrate 21: gas flow path 30: air hole 40: insulating sleeve 50: adhesive film 100: base 190: groove 200: base substrate 280: hole 281: electrode rod 290: groove 300: insulating plate 312: adhesive 320: electrode layer 400: sleeve structure 410: cap sleeve structure 411: through hole 420: sleeve structure 520: tubular structure

FIG. 1 is a diagram for explaining a conventional method of bonding a base substrate 20 and an insulating plate 13 of a base.

FIG. 2 is a schematic cross-sectional view of a base according to an embodiment of the present invention.

FIG. 3 is an enlarged cross-sectional view of the AA portion of FIG. 2 .

4a to 4d are cross-sectional views of the pore portion in each process for explaining the manufacturing process of the base according to an embodiment of the present invention.

5a to 5c are cross-sectional views of the pore portion in each process for illustrating the manufacturing process of the base according to another embodiment of the present invention.

FIG. 6 is a diagram for explaining another embodiment of the manufacturing process of FIG. 5a.

15: Cooling gas flow path

30: Stoma

200: Base material

300: Insulation board

312: Adhesive

410: Cap-type casing structure

411:Through hole

Claims (7)

A method for manufacturing a base, comprising the following steps: an inserting step, inserting a tubular structure into a groove formed at the end of a gas flow path, wherein the gas flow path extends toward the pores of an insulating plate; a forming step, forming an adhesive layer using an adhesive, wherein the height of the adhesive layer is below the height of the end of the tubular structure; a bonding step, bonding a base substrate including an electrode layer on the bonding layer, and bonding by inserting the tubular structure into the gas flow path of the base substrate; and a removing step, removing the tubular structure. The manufacturing method of the base as described in claim 1, wherein, in the step of inserting the tubular structure, the sleeve structure having a through hole is first inserted into the groove, and then the tubular structure is inserted into the inner side of the sleeve structure. A method for manufacturing a base as described in claim 2, wherein the sleeve structure is made of the same material as the insulating plate, that is, a ceramic material. A method for manufacturing a base as described in claim 2, wherein the sleeve structure has a height extending above the end of the groove of the insulating plate. A method for manufacturing a base as described in claim 1, wherein the tubular structure is made of plastic material. A method for manufacturing a base as described in claim 1, wherein the diameter of the tubular structure is smaller than or equal to the diameter of the groove at the end of the gas flow path, and the gas flow path extends toward the air hole of the insulating plate. A method for manufacturing a base as described in claim 2, wherein the diameter of the tubular structure is less than or equal to the diameter of the inner through hole of the sleeve structure.