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TWI852531B - Wet membrane plate and a preparation method thereof - Google Patents

Wet membrane plate and a preparation method thereof Download PDF

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TWI852531B
TWI852531B TW112116641A TW112116641A TWI852531B TW I852531 B TWI852531 B TW I852531B TW 112116641 A TW112116641 A TW 112116641A TW 112116641 A TW112116641 A TW 112116641A TW I852531 B TWI852531 B TW I852531B
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polymer layer
sheet
plate
wet
plasma treatment
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TW112116641A
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TW202444807A (en
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卓冠宏
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奇鼎科技股份有限公司
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Abstract

The present invention discloses a wet membrane plate and a preparation method thereof. By applying plasma treatment on the polymer layer, the surface of the polymer layer forms multi-scales of millimeter, micron, and nanocomposite structures. The overall hydrophilicity of the wet membrane plate is effectively enhanced by plasma treatment, thereby prolonging the contact time of the airborne molecular contamination when the exhaust gas passing through the wet membrane plate.

Description

濕式膜板及其製備方法Wet membrane plate and preparation method thereof

本發明係有關一種濕式膜板及其製備方法,尤其是一種運用於濕式洗滌塔,並增加噴霧與廢氣接觸時間之濕式膜板及其製備方法。The present invention relates to a wet membrane plate and a preparation method thereof, in particular to a wet membrane plate and a preparation method thereof which is used in a wet scrubber and increases the contact time between spray and exhaust gas.

在超大型積體電路(ULSI)製程中,晶圓洗淨之技術及其潔淨度(Cleanliness)往往是影響晶圓製程的良率(Yield)、元件品質(Quality)以及其可靠度(Reliability)的重要因素之一。因此,在相關製程中需要對晶圓進行清洗來達到潔淨度的要求。In the ultra-large integrated circuit (ULSI) process, wafer cleaning technology and its cleanliness are often one of the important factors affecting the yield, component quality and reliability of the wafer process. Therefore, the wafer needs to be cleaned in the relevant process to meet the cleanliness requirements.

而晶圓的清洗是將整批次或單一晶圓,藉由化學品浸泡或純水清洗來進行,主要是為了清除晶圓表面的污染物,如微粒子、有機汙染物、無機物、金屬離子等雜質。Wafer cleaning involves soaking a whole batch or a single wafer in chemicals or using pure water to clean the wafer surface, mainly to remove contaminants such as microparticles, organic pollutants, inorganic substances, metal ions and other impurities.

目前業界較常使用濕式清洗法,而最為被接受的是濕式清洗法中的RCA清潔法(RCA Clean),此RCA清潔法為1960年代由RCA公司所發展。其清潔原理在於使用於不同的化學配方來進行清潔,像是標準清潔液1(SC-1)及標準清潔液2(SC-2)等。Currently, the industry is more likely to use wet cleaning methods, and the most accepted one is the RCA Clean method, which was developed by RCA in the 1960s. The cleaning principle is to use different chemical formulas for cleaning, such as Standard Cleaning Solution 1 (SC-1) and Standard Cleaning Solution 2 (SC-2).

而在使用化學配方SC-1(APM)、SC-2(HPM)、SPM、DHF及BHF…等進行清潔的同時,常會帶有大量酸氣、鹼氣及揮發性有機物等製程混合廢氣排放。目前對於揮發性有機物的去除效率一直未能達到良好之效果。When using chemical formulas such as SC-1 (APM), SC-2 (HPM), SPM, DHF and BHF for cleaning, a large amount of acid gas, alkaline gas and volatile organic matter are often discharged as mixed waste gas. Currently, the removal efficiency of volatile organic matter has not been able to achieve a good effect.

而揮發性有機物(又稱揮發性有機氣體污染物,Volatile Organic Compounds, VOCs),係指在一大氣壓下,沸點在250℃以下之有機化合物之空氣污染物總稱,其所造成的環境污染問題,廣泛地存在於各類型工業中。Volatile organic compounds (VOCs) are a general term for air pollutants that are organic compounds with a boiling point below 250°C under atmospheric pressure. The environmental pollution problems they cause are widely present in all types of industries.

而工業上常見的揮發性有機物以丙酮(Acetone)、異丙酮(IPA)、丙二醇單甲基醚(PGME)、乙酸丙二醇單甲基醚酯(PGMEA)、二甲基亞碸(DMSO)、乙醇胺(MEA)、氮-甲基2-四氫吡咯酮(NMP)、二乙二醇單丁醚(BDG)、四甲基氫氧化銨(TMAH)等成份為多數。The most common volatile organic compounds in industry are acetone (Acetone), isopropyl acetone (IPA), propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), dimethyl sulfoxide (DMSO), ethanolamine (MEA), nitrogen-methyl 2-tetrahydropyrrolidone (NMP), diethylene glycol monobutyl ether (BDG), tetramethylammonium hydroxide (TMAH) and other components.

在解決混合廢氣的問題上,多為導入濕式洗滌塔來處理廢氣中污染物(酸、鹼、有機物質)。濕式洗滌塔多以洗滌液做為質量傳遞的淋水材媒介,藉由濕式洗滌塔中噴霧加濕系統(利用泵將洗滌液加壓產生細化成特定直徑之霧化顆粒),使噴霧與進入之廢氣進行慣性撞擊、質傳、溶解等作用進而去除廢氣中污染物(酸、鹼、有機物質)。In solving the problem of mixed exhaust gas, a wet scrubber is usually introduced to treat pollutants (acids, alkalis, and organic substances) in the exhaust gas. Wet scrubbers usually use scrubbing liquid as a water medium for mass transfer. Through the spray humidification system in the wet scrubber (using a pump to pressurize the scrubbing liquid to produce atomized particles of a specific diameter), the spray and the incoming exhaust gas undergo inertial collision, mass transfer, and dissolution to remove pollutants (acids, alkalis, and organic substances) in the exhaust gas.

然而,淋水材在濕式洗滌塔上的使用會受限於工廠設備的佔地尺寸,無法藉由設置眾多淋水材(需擴大佔地)來延長霧化顆粒與廢氣的接觸時間。However, the use of water spraying materials in wet scrubbers is limited by the size of the plant equipment. It is not possible to extend the contact time between atomized particles and exhaust gas by installing a large number of water spraying materials (which requires expanding the floor space).

為此,如何在工廠設備有限空間的情況下,使霧化顆粒與廢氣於濕式洗滌塔內接觸時間進而達到良好淨化,為此技術領域之研究者所欲解決之問題。Therefore, how to make the contact time between the atomized particles and the exhaust gas in the wet scrubber longer and achieve good purification under the condition of limited space in the factory equipment is a problem that researchers in this technical field want to solve.

本發明之主要目的,係提供一種濕式膜板及其製備方法,藉由對高分子層進行電漿處理,使其於表面因電漿而形成毫米、微米及奈米複合結構。並藉由電漿處理來改善濕式膜板整體的親水性,進而延長霧化顆粒在通過濕式膜板時與廢氣的接觸時間。The main purpose of the present invention is to provide a wet membrane and a preparation method thereof, wherein a polymer layer is subjected to plasma treatment to form a millimeter, micrometer and nanometer composite structure on the surface due to plasma. The plasma treatment is also used to improve the hydrophilicity of the wet membrane as a whole, thereby prolonging the contact time between the atomized particles and the exhaust gas when passing through the wet membrane.

為了達到上述之目的,本發明揭示了一種濕式膜板之製備方法,其步驟包含:取一成型板材;於該成型板材之表面塗佈一結晶型高分子溶液後,進行一熱壓處理,使該結晶型高分子溶液於該成型板材上形成一高分子層,該高分子層係一非平面式結構;以及使用一反應性氣體對該高分子層進行一電漿處理,使該高分子層親水化及粗糙化,並形成一濕式膜板;其中,該濕式膜板之表面係毫米、微米及奈米複合結構,該結晶型高分子溶液係選自由一聚對苯二甲酸乙二酯、一尼龍、一聚對苯二甲酸丁二酯、一聚縮醛及一聚丙烯所組成之群組之其中之一或其組合。In order to achieve the above-mentioned purpose, the present invention discloses a method for preparing a wet membrane plate, the steps of which include: taking a molded plate; coating a crystalline polymer solution on the surface of the molded plate, and then performing a hot pressing treatment to form a polymer layer on the molded plate with the crystalline polymer solution, wherein the polymer layer is a non-planar structure; and using a reactive gas to perform a plasma treatment on the polymer layer to make the polymer layer hydrophilic and rough, and form a wet membrane plate; wherein the surface of the wet membrane plate is a millimeter, micrometer and nanometer composite structure, and the crystalline polymer solution is selected from one of the group consisting of a polyethylene terephthalate, a nylon, a polybutylene terephthalate, a polyacetal and a polypropylene, or a combination thereof.

本發明提供一實施例,其內容在於濕式膜板之製備方法,其中於取一成型板材之步驟前,進一步包含步驟:取一塑料於以150℃~200℃之溫度下進行一成型處理,其中該成型處理係一滾壓成型處理、一模壓成型處理或一熱壓成型處理,該塑料係選自由該聚對苯二甲酸乙二酯、該尼龍、該聚對苯二甲酸丁二酯、該聚縮醛及該聚丙烯所組成之群組之其中之一或其組合。The present invention provides an embodiment, which is a method for preparing a wet film sheet, wherein before the step of taking a formed sheet, the method further comprises the step of: taking a plastic and performing a forming process at a temperature of 150°C to 200°C, wherein the forming process is a rolling forming process, a compression forming process or a hot pressing forming process, and the plastic is selected from one of the group consisting of polyethylene terephthalate, nylon, polybutylene terephthalate, polyacetal and polypropylene, or a combination thereof.

本發明提供一實施例,其內容在於濕式膜板之製備方法,其中於使該結晶型高分子溶液於該成型板材上形成一高分子層之步驟中,該非平面式結構之表面係微米結構。The present invention provides an embodiment, which is a method for preparing a wet membrane plate, wherein in the step of forming a polymer layer on the shaped plate from the crystalline polymer solution, the surface of the non-planar structure is a micron structure.

本發明提供一實施例,其內容在於濕式膜板之製備方法,其中於進行一熱壓處理之步驟中,該熱壓處理之溫度係介於60至70℃之間。The present invention provides an embodiment, which is a method for preparing a wet membrane, wherein in a step of performing a hot pressing treatment, the temperature of the hot pressing treatment is between 60 and 70°C.

本發明提供一實施例,其內容在於濕式膜板之製備方法,其中於使用一反應性氣體對該高分子層進行一電漿處理之步驟中,該電漿處理之固定頻率係13.56MHz,該電漿處理之壓力係10 mTorr,該電漿處理之功率係介於10W至100W之間及該電漿處理之蝕刻時間係介於1至5分鐘之間。The present invention provides an embodiment, which is a method for preparing a wet membrane, wherein in the step of using a reactive gas to perform a plasma treatment on the polymer layer, the fixed frequency of the plasma treatment is 13.56 MHz, the pressure of the plasma treatment is 10 mTorr, the power of the plasma treatment is between 10 W and 100 W, and the etching time of the plasma treatment is between 1 and 5 minutes.

又,本發明揭示了一種濕式膜板,其結構包含:一成型板材;以及一高分子層,該高分子層係一非平面式結構,其設置於該成型板材之上表面;其中,該濕式膜板之上表面係毫米、微米及奈米複合結構,製備該濕式膜板之步驟包含:取一成型板材;於該成型板材之表面塗佈一結晶型高分子溶液後,進行一熱壓處理,使該結晶型高分子溶液於該成型板材上形成一高分子層,該高分子層係一非平面式結構;以及使用一反應性氣體對該高分子層進行一電漿處理,使該高分子層親水化及粗糙化,並形成一濕式膜板。Furthermore, the present invention discloses a wet membrane plate, the structure of which includes: a molded plate; and a polymer layer, the polymer layer is a non-planar structure, which is arranged on the upper surface of the molded plate; wherein the upper surface of the wet membrane plate is a millimeter, micrometer and nanometer composite structure, and the steps of preparing the wet membrane plate include: taking a molded plate; after applying a crystalline polymer solution on the surface of the molded plate, performing a hot pressing treatment so that the crystalline polymer solution forms a polymer layer on the molded plate, the polymer layer is a non-planar structure; and using a reactive gas to perform a plasma treatment on the polymer layer to make the polymer layer hydrophilic and roughened, and form a wet membrane plate.

本發明提供一實施例,其內容在於濕式膜板,其中該成型板材之高度係介於1mm至10mm之間。The present invention provides an embodiment, which is a wet film sheet, wherein the height of the formed sheet is between 1 mm and 10 mm.

本發明提供一實施例,其內容在於濕式膜板,其中該成型板材係一波浪型板材、一鋸齒型板材或一圓弧型板材。The present invention provides an embodiment, which is a wet film plate, wherein the shaped plate is a corrugated plate, a sawtooth plate or an arc plate.

本發明提供一實施例,其內容在於濕式膜板,其中該高分子層係於該成型板材之上表面塗佈一結晶型高分子溶液後,進行一熱壓處理而成。The present invention provides an embodiment, which is a wet film plate, wherein the polymer layer is formed by coating a crystalline polymer solution on the upper surface of the formed plate and then performing a heat pressing treatment.

本發明提供一實施例,其內容在於濕式膜板,其中該高分子層之厚度係介於2至3微米之間。The present invention provides an embodiment, which is a wet membrane, wherein the thickness of the polymer layer is between 2 and 3 microns.

為使貴審查委員對本發明之特徵及所達成之功效有更進一步之瞭解與認識,謹佐以實施例及配合說明,說明如後:In order to enable you to have a deeper understanding and knowledge of the features and effects of the present invention, we would like to provide practical examples and accompanying explanations as follows:

有鑑於習知霧化顆粒與廢氣接觸時間過短,因而淨化效率不高的問題。據此,本發明遂提出一種濕式膜板及其製備方法,以解決習知技術所造成之問題。In view of the fact that the contact time between atomized particles and exhaust gas is too short, and thus the purification efficiency is low, the present invention proposes a wet membrane plate and a preparation method thereof to solve the problem caused by the prior art.

以下將進一步說明本發明之一種濕式膜板及其製備方法其包含之特性、所搭配之結構及方法:The following will further describe the characteristics, structure and method of preparing a wet membrane plate of the present invention:

請參閱第1圖,其係本發明之一實施例之步驟流程圖。如第1圖所示,一種濕式膜板之製備方法,其步驟包含:Please refer to Figure 1, which is a flow chart of the steps of one embodiment of the present invention. As shown in Figure 1, a method for preparing a wet membrane plate comprises the following steps:

S1:取成型板材;S1: Take the formed sheet;

S2:於成型板材之表面塗佈結晶型高分子溶液後,進行熱壓處理,使結晶型高分子溶液於成型板材上形成高分子層,該高分子層係非平面式結構;以及S2: After applying the crystalline polymer solution on the surface of the formed sheet, a heat-pressing treatment is performed to make the crystalline polymer solution form a polymer layer on the formed sheet, and the polymer layer is a non-planar structure; and

S3:使用反應性氣體對高分子層進行電漿處理,使高分子層親水化及粗糙化,並形成濕式膜板。S3: Use reactive gas to perform plasma treatment on the polymer layer to make it hydrophilic and rough, and form a wet membrane.

其中於步驟S1之前,進一步包含步驟S0:取塑料於以150℃~200℃之溫度下進行成型處理。Before step S1, the method further includes step S0: taking the plastic and subjecting it to a molding process at a temperature of 150°C to 200°C.

並如步驟S0所示,取一塑料於以150℃~200℃之溫度下進行一成型處理,並形成步驟S1中所使用之一成型板材11。其中該成型處理係一滾壓成型處理、一模壓成型處理或一熱壓成型處理,而該塑料係選自由一聚對苯二甲酸乙二酯、一尼龍、一聚對苯二甲酸丁二酯、一聚縮醛及一聚丙烯所組成之群組之其中之一或其組合。As shown in step S0, a plastic is subjected to a molding process at a temperature of 150°C to 200°C to form a molded sheet 11 used in step S1. The molding process is a rolling molding process, a die molding process or a hot pressing process, and the plastic is selected from the group consisting of polyethylene terephthalate, nylon, polybutylene terephthalate, polyacetal and polypropylene, or a combination thereof.

而根據步驟S0所形成之該成型板材11,其高度係介於1mm至10mm之間。且該成型板材11除了平面板材外,該成型板材11係一波浪型板材、一鋸齒型板材或一圓弧型板材等等(請分別參閱第2A至2C圖,其係本發明之一實施例之成型板材之結構示意圖),其形狀可提供氣體流通即可,為此該成型板材11之形狀不以此為限。The height of the formed plate 11 formed in step S0 is between 1 mm and 10 mm. In addition to a flat plate, the formed plate 11 can be a corrugated plate, a sawtooth plate, or an arc plate, etc. (please refer to FIGS. 2A to 2C, which are schematic structural diagrams of the formed plate of an embodiment of the present invention). The shape of the formed plate 11 can provide gas flow, and the shape of the formed plate 11 is not limited to this.

接續,如步驟S2所示,於該成型板材11之表面塗佈一結晶型高分子溶液後,進行一熱壓處理,使該結晶型高分子溶液於該成型板材11上形成一高分子層12。其中該結晶型高分子溶液係選自由該聚對苯二甲酸乙二酯、該尼龍、該聚對苯二甲酸丁二酯、該聚縮醛及該聚丙烯所組成之群組之其中之一或其組合。Next, as shown in step S2, after a crystalline polymer solution is coated on the surface of the molded plate 11, a heat pressing treatment is performed to form a polymer layer 12 on the molded plate 11 with the crystalline polymer solution. The crystalline polymer solution is selected from one of the group consisting of polyethylene terephthalate, nylon, polybutylene terephthalate, polyacetal and polypropylene, or a combination thereof.

其該結晶型高分子溶液之製備實施例如下:將高分子顆粒如該聚對苯二甲酸乙二酯溶於2-氯苯酚(2-chlorophenol)中並於60℃溫度下進行攪拌至完全溶解。溶液的配方為重量比為7%的高分子顆粒/2-氯苯酚(2-chlorophenol)混合液。塗佈之該結晶型高分子溶液其厚度控制在2~3微米,並以60℃在烘箱加熱3小時後自然冷卻。The preparation example of the crystalline polymer solution is as follows: polymer particles such as polyethylene terephthalate are dissolved in 2-chlorophenol and stirred at 60°C until completely dissolved. The solution formula is a 7% by weight polymer particle/2-chlorophenol mixture. The thickness of the applied crystalline polymer solution is controlled to be 2-3 microns, and it is heated in an oven at 60°C for 3 hours and then cooled naturally.

且,該熱壓處理係於該成型板材11上塗佈完該結晶型高分子溶液後,於60至70℃之溫度下,取具有階層式的毫米及微米結構之PDMS(Polydimethylsiloxane)印章以軟壓印於該成型板材11上之該結晶型高分子溶液,並以該滾壓成型處理、該模壓成型處理或該熱壓成型處理滾壓,並控制在10~30秒,其壓力則控制在2~10kg/cm 2,之後便在60℃之烘箱內加熱3小時後自然冷卻,此時該結晶型高分子溶液於該成型板材上形成該高分子層12(剝離PDMS印章即可)。 In addition, the hot pressing treatment is to apply the crystalline polymer solution on the forming plate 11, and then take a PDMS (Polydimethylsiloxane) stamp with a hierarchical millimeter and micrometer structure to softly emboss the crystalline polymer solution on the forming plate 11 at a temperature of 60 to 70°C, and roll press the crystalline polymer solution by the rolling forming treatment, the molding treatment or the hot pressing treatment, and control it within 10 to 30 seconds, and the pressure is controlled within 2 to 10kg/ cm2 , and then it is heated in an oven at 60°C for 3 hours and then naturally cooled. At this time, the crystalline polymer solution forms the polymer layer 12 on the forming plate (the PDMS stamp can be peeled off).

其中,PDMS印章之製備:將PDMS主劑及硬化劑以重量比10:1的比例先在燒杯內攪拌均勻後,再傾倒在模具(具有階層式的毫米及微米結構,以雷射蝕刻製備)上,由於過程中有大量的氣體,而且為了能夠將溶液中的空氣排出,先將培養皿移到真空罐內抽真空,促使整個系統內的空氣能夠全部移走。之後再將培養皿移到加熱板上以60℃加熱12小時以上,以促使PDMS印章能夠固化反應完全。待其反應終結後,即可撕下擁有階層式的毫米及微米結構之PDMS印章。Among them, the preparation of PDMS stamp: PDMS main agent and hardener are first mixed evenly in a beaker at a weight ratio of 10:1, and then poured on the mold (with a hierarchical millimeter and micrometer structure, prepared by laser etching). Because there is a large amount of gas in the process, and in order to be able to discharge the air in the solution, the culture dish is first moved to a vacuum tank for vacuuming, so that all the air in the entire system can be removed. Then move the culture dish to a heating plate and heat it at 60℃ for more than 12 hours to enable the PDMS stamp to cure completely. After the reaction is completed, the PDMS stamp with a hierarchical millimeter and micrometer structure can be torn off.

此時,使用PDMS印章所形成之該高分子層12係一非平面式結構(為階層式),其厚度介於2至3微米之間外,該非平面式結構之表面具有毫米及微米結構。At this time, the polymer layer 12 formed by using the PDMS stamp is a non-planar structure (a hierarchical structure) with a thickness between 2 and 3 microns. The surface of the non-planar structure has a millimeter and micron structure.

最後,如步驟S3所示,使用一反應性氣體對該高分子層進行一電漿處理,使該高分子層親水化及粗糙化,並形成一濕式膜板1。Finally, as shown in step S3, a reactive gas is used to perform a plasma treatment on the polymer layer to make the polymer layer hydrophilic and rough, and form a wet membrane plate 1.

其利用金屬環電極驅動的射頻式電容耦合電漿(rf-capacitively coupled)來進行該電漿處理,將待電漿物品放置於電漿腔體內部,其中,該電漿處理之固定頻率係13.56MHz,該電漿處理之壓力係10 mTorr,該電漿處理之功率係介於10W至100W之間,較佳為低於100W及該電漿處理之蝕刻時間係介於1至5分鐘,較佳為低於5分鐘。且,於金屬環與基板距離4.6cm以及氧氣流動速度為2.1sccm之情況下採用該反應性氣體(O 2)來進行。除了氧氣外,該反應性氣體可以選用氨氣或大氣。 The plasma treatment is performed by using a radio frequency capacitively coupled plasma driven by a metal ring electrode, and the object to be treated with plasma is placed inside a plasma chamber, wherein the fixed frequency of the plasma treatment is 13.56 MHz, the pressure of the plasma treatment is 10 mTorr, the power of the plasma treatment is between 10 W and 100 W, preferably less than 100 W, and the etching time of the plasma treatment is between 1 and 5 minutes, preferably less than 5 minutes. Furthermore, the reactive gas (O 2 ) is used when the distance between the metal ring and the substrate is 4.6 cm and the oxygen flow rate is 2.1 sccm. In addition to oxygen, the reactive gas may be ammonia or atmospheric air.

且,射頻式電容耦合電漿的主要優點是:沒有電極腐蝕或污染的問題,電極的材質也不會干擾電漿狀態,且由於電場的波長強度大於容器的大小,可產生均勻的電漿。Moreover, the main advantages of RF capacitive coupled plasma are: there is no problem of electrode corrosion or contamination, the material of the electrode will not interfere with the plasma state, and because the wavelength intensity of the electric field is greater than the size of the container, a uniform plasma can be produced.

再者,經過該電漿處理,使其粗糙化及親水化後,除了毫米及微米結構外,還會進一步形成奈米結構,為此該濕式膜板1之表面係具高粗糙度的毫米、微米及奈米複合結構。因,在該電漿處理之過程中,材料表面較弱鍵結會先被電漿活性粒子破壞,進而被該反應性氣體解離生成之高反應性官能基所取代,達到活化高分子表面的效應,而常見的反應性官能基有-O、-COOH及-NH2等,可藉此來改變材料表面的反應活性或改善浸潤性、黏著性等機能,進而達到洗滌液的擴散性。Furthermore, after the plasma treatment, the surface of the wet membrane 1 is roughened and hydrophilized, and in addition to the millimeter and micrometer structures, a nanometer structure is further formed. Therefore, the surface of the wet membrane 1 has a high roughness of millimeter, micrometer and nanometer composite structure. Because, during the plasma treatment process, the weaker bonds on the surface of the material will first be destroyed by the plasma active particles, and then replaced by the highly reactive functional groups generated by the dissociation of the reactive gas, so as to achieve the effect of activating the polymer surface. Common reactive functional groups include -O, -COOH and -NH2, etc., which can be used to change the reactivity of the material surface or improve the wettability, adhesion and other functions, thereby achieving the diffusibility of the washing liquid.

並請參閱第3圖,其係本發明之一實施例之濕式膜板之結構示意圖。經由上述步驟後,本發明之一種濕式膜板1,其結構包含:該成型板材11(高度係介於1mm至10mm之間,並以平面板材為例)以及該高分子層12(厚度係介於2至3微米之間),該高分子層係該非平面式結構(階層式),其係透過該熱壓處理(此時形成毫米及微米結構)設置於該成型板材之上表面後,並進行該電漿處理使該高分子層具有粗糙化表面121,且更進一步形成奈米結構,其中該濕式膜板之上表面係具高粗糙度的毫米、微米及奈米複合結構。Please refer to Figure 3, which is a schematic diagram of the structure of a wet film sheet of an embodiment of the present invention. After the above steps, a wet film sheet 1 of the present invention comprises: the formed plate 11 (the height is between 1mm and 10mm, and a flat plate is used as an example) and the polymer layer 12 (the thickness is between 2 and 3 microns), the polymer layer is the non-planar structure (hierarchical), which is disposed on the upper surface of the formed plate through the hot pressing treatment (forming a millimeter and micron structure at this time), and the plasma treatment is performed to make the polymer layer have a roughened surface 121, and further form a nanostructure, wherein the upper surface of the wet film sheet is a millimeter, micron and nano composite structure with high roughness.

進一步,為本發明之濕式膜板1之實驗檢測,由下表1可以看出,經過該電漿處理(O 2)後,該濕式膜板上水滴之接觸角度隨著電漿之蝕刻時間的增加也隨之降低。 表1、水滴接觸角實驗數據表 經電漿處理之表面 0分鐘 1分鐘 2分鐘 3分鐘 4分鐘 5分鐘 水滴接觸角 51∘ 32∘ 18∘ 3∘ 2∘ 2∘ Furthermore, the experimental test of the wet film 1 of the present invention shows that after the plasma treatment (O 2 ), the contact angle of the water drop on the wet film decreases with the increase of the plasma etching time. Table 1, experimental data table of water drop contact angle Plasma treated surface 0 minutes 1 minute 2 minutes 3 minutes 4 minutes 5 minutes Water drop contact angle 51∘ 32∘ 18∘ 3∘ 2∘ 2∘

接觸角(contact angle)是意指在液體/氣體界面接觸固體表面而形成的夾角。接觸角是由三個不同界面相互作用的一個系統。且,接觸角也是作為衡量材料本身親、疏水性的重要指標。當材料與水滴的接觸角越小時,顯示其材料親水性越高。顯示本發明經電漿處理後,確實可以改善濕式膜板1的親水性。The contact angle refers to the angle formed when the liquid/gas interface contacts the solid surface. The contact angle is a system of three different interfaces interacting with each other. Moreover, the contact angle is also an important indicator for measuring the hydrophilicity and hydrophobicity of the material itself. The smaller the contact angle between the material and the water droplet, the higher the hydrophilicity of the material. It shows that the present invention can indeed improve the hydrophilicity of the wet membrane plate 1 after plasma treatment.

又,請參閱第4圖:其係本發明之一實施例之掃描電子顯微鏡圖。如圖所示,藉由掃描電子顯微鏡的觀察可知,經過電漿處理(O 2)後,濕式膜板1之階層式表面隨著電漿處理的蝕刻時間((a)0、(b)1、(c)2、(d)3、(e)4、(f)5分鐘)加劇,其表面越呈現粗糙化,顯示電漿處理除了會使濕式膜板整體更加親水性外(其水滴接觸角逐漸減少),還可進一步使其形成粗糙化表面121,以便增加霧化洗滌顆粒與廢氣接觸時間。 Please refer to Figure 4: It is a scanning electron microscope image of an embodiment of the present invention. As shown in the figure, it can be seen from the observation of the scanning electron microscope that after the plasma treatment (O 2 ), the hierarchical surface of the wet film 1 becomes rougher as the etching time of the plasma treatment ((a) 0, (b) 1, (c) 2, (d) 3, (e) 4, (f) 5 minutes) increases, indicating that the plasma treatment not only makes the wet film more hydrophilic as a whole (its water drop contact competition gradually decreases), but also further forms a roughened surface 121 to increase the contact time between the atomized washing particles and the exhaust gas.

為此,相較於習知需要噴砂且為無機材料的技術,本發明以結晶型有機高分子材料來製備具毫米及微米結構之濕式膜板,且濕式膜板經電漿表面處理後達成具毫米、微米及奈米結構的高粗糙度濕式膜板,並且透過電漿後所快速改善的親水性質來有效提升霧化顆粒與廢氣接觸時的擴散性,以此來增加接觸時間及面積。For this purpose, compared with the conventional technology that requires sandblasting and is made of inorganic materials, the present invention uses crystalline organic polymer materials to prepare wet membranes with millimeter and micrometer structures, and the wet membranes are treated with plasma surface to achieve high roughness wet membranes with millimeter, micrometer and nanometer structures, and the hydrophilic properties that are quickly improved after plasma treatment are effectively improved to effectively enhance the diffusion of atomized particles when in contact with exhaust gas, thereby increasing the contact time and area.

故本發明實為一具有新穎性、進步性及可供產業上利用者,應符合我國專利法專利申請要件無疑,爰依法提出發明專利申請,祈  鈞局早日賜准專利,至感為禱。Therefore, this invention is novel, progressive and can be used in the industry. It should undoubtedly meet the patent application requirements of the Patent Law of our country. Therefore, we have filed an invention patent application in accordance with the law and pray that the Bureau will approve the patent as soon as possible. I am deeply grateful.

惟以上所述者,僅為本發明之較佳實施例而已,並非用來限定本發明實施之範圍,舉凡依本發明申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾,均應包括於本發明之申請專利範圍內。However, the above is only a preferred embodiment of the present invention and is not intended to limit the scope of implementation of the present invention. All equivalent changes and modifications made according to the shape, structure, features and spirit described in the patent application scope of the present invention should be included in the patent application scope of the present invention.

S1、S2、S3:步驟流程 1:濕式膜板 11:成型板材 12:高分子層 121:粗糙化表面S1, S2, S3: Steps 1: Wet membrane sheet 11: Forming sheet 12: Polymer layer 121: Roughening surface

第1圖:其係本發明之一實施例之步驟流程圖;FIG. 1 is a flow chart of the steps of one embodiment of the present invention;

第2A-2C圖:其係本發明之一實施例之成型板材之結構示意圖Figures 2A-2C: Schematic diagram of the structure of a formed plate of one embodiment of the present invention

第3圖:其係本發明之一實施例之濕式膜板之結構示意圖;以及FIG. 3 is a schematic structural diagram of a wet membrane plate according to an embodiment of the present invention; and

第4圖:其係本發明之一實施例之掃描式電子顯微鏡圖。FIG. 4 is a scanning electron microscope image of an embodiment of the present invention.

S1、S2、S3:步驟流程 S1, S2, S3: Step flow

Claims (10)

一種濕式膜板之製備方法,其步驟包含:取一成型板材;於該成型板材之表面塗佈一結晶型高分子溶液後,取具有階層式的毫米及微米結構之聚二甲基矽氧烷印章進行一熱壓處理,使該結晶型高分子溶液於該成型板材上形成一高分子層,該高分子層係一非平面式結構;以及使用一反應性氣體對該高分子層進行一電漿處理,使該高分子層親水化及粗糙化後形成奈米結構,並形成一濕式膜板;其中,該濕式膜板之表面係毫米、微米及奈米複合結構,該結晶型高分子溶液係選自由一聚對苯二甲酸乙二酯、一尼龍、一聚對苯二甲酸丁二酯、一聚縮醛及一聚丙烯所組成之群組之其中之一或其組合。 A method for preparing a wet film comprises the following steps: taking a shaped plate; applying a crystalline polymer solution on the surface of the shaped plate, taking a polydimethylsiloxane stamp having a hierarchical millimeter and micrometer structure and performing a heat-pressing treatment to make the crystalline polymer solution form a polymer layer on the shaped plate, wherein the polymer layer is a non-planar structure; and using a reactive gas to heat the polymer layer. The molecular layer is subjected to a plasma treatment to hydrophilize and roughen the polymer layer to form a nanostructure, and a wet membrane is formed; wherein the surface of the wet membrane is a composite structure of millimeters, micrometers and nanometers, and the crystalline polymer solution is selected from one of the group consisting of polyethylene terephthalate, nylon, polybutylene terephthalate, polyacetal and polypropylene, or a combination thereof. 如請求項1所述之濕式膜板之製備方法,其中於取一成型板材之步驟前,進一步包含步驟:取一塑料於以150℃~200℃之溫度下進行一成型處理,其中該成型處理係一滾壓成型處理、一模壓成型處理或一熱壓成型處理,該塑料係選自由該聚對苯二甲酸乙二酯、該尼龍、該聚對苯二甲酸丁二酯、該聚縮醛及該聚丙烯所組成之群組之其中之一或其組合。 The method for preparing a wet film sheet as described in claim 1, wherein before the step of obtaining a formed sheet, further comprises the step of: obtaining a plastic and subjecting it to a forming process at a temperature of 150°C to 200°C, wherein the forming process is a rolling forming process, a compression forming process or a hot pressing forming process, and the plastic is selected from one of the group consisting of the polyethylene terephthalate, the nylon, the polybutylene terephthalate, the polyacetal and the polypropylene, or a combination thereof. 如請求項1所述之濕式膜板之製備方法,其中於使該結晶型高分子溶液於該成型板材上形成一高分子層之步驟中,該非平面式結構之表面係微米結構。 The method for preparing a wet membrane sheet as described in claim 1, wherein in the step of forming a polymer layer on the shaped sheet from the crystalline polymer solution, the surface of the non-planar structure is a micron structure. 如請求項1所述之濕式膜板之製備方法,其中於進行一熱壓處理之步驟中,該熱壓處理之溫度係介於60至70℃之間。 A method for preparing a wet membrane sheet as described in claim 1, wherein in the step of performing a hot pressing treatment, the temperature of the hot pressing treatment is between 60 and 70°C. 如請求項1所述之濕式膜板之製備方法,其中於使用一反應性氣體對該高分子層進行一電漿處理之步驟中,該電漿處理之固定頻率係13.56MHz,該電漿處理之壓力係10mTorr,該電漿處理之功率係介於10W至100W之間及該電漿處理之蝕刻時間係介於1至5分鐘之間。 A method for preparing a wet membrane as described in claim 1, wherein in the step of using a reactive gas to perform a plasma treatment on the polymer layer, the fixed frequency of the plasma treatment is 13.56 MHz, the pressure of the plasma treatment is 10 mTorr, the power of the plasma treatment is between 10 W and 100 W, and the etching time of the plasma treatment is between 1 and 5 minutes. 一種濕式膜板,其結構包含:一成型板材;以及一高分子層,該高分子層係一非平面式結構,其設置於該成型板材之上表面;其中,該濕式膜板之上表面係毫米、微米及奈米複合結構,製備該濕式膜板之步驟包含:取一成型板材;於該成型板材之表面塗佈一結晶型高分子溶液後,取具有階層式的毫米及微米結構之聚二甲基矽氧烷印章進行一熱壓處理,使該結晶型高分子溶液於該成型板材上形成一高分子層,該高分子層係一非平面式結構;以及使用一反應性氣體對該高分子層進行一電漿處理,使該高分子層親水化及粗糙化後形成奈米結構,並形成一濕式膜板。 A wet film plate, the structure of which includes: a molded plate; and a polymer layer, the polymer layer is a non-planar structure, which is arranged on the upper surface of the molded plate; wherein the upper surface of the wet film plate is a millimeter, micrometer and nanometer composite structure, and the steps of preparing the wet film plate include: taking a molded plate; after applying a crystalline polymer solution on the surface of the molded plate, taking a polydimethylsiloxane stamp with a hierarchical millimeter and micrometer structure to perform a hot pressing treatment, so that the crystalline polymer solution forms a polymer layer on the molded plate, the polymer layer is a non-planar structure; and using a reactive gas to perform a plasma treatment on the polymer layer, so that the polymer layer is hydrophilized and roughened to form a nanostructure, and a wet film plate is formed. 如請求項6所述之濕式膜板,其中該成型板材之高度係介於1mm至10mm之間。 A wet film sheet as described in claim 6, wherein the height of the formed sheet is between 1 mm and 10 mm. 如請求項6所述之濕式膜板,其中該成型板材係一波浪型板材、一鋸齒型板材或一圓弧型板材。 A wet membrane sheet as described in claim 6, wherein the shaped sheet is a corrugated sheet, a sawtooth sheet or an arc-shaped sheet. 如請求項6所述之濕式膜板,其中該高分子層係於該成型板材之上表面塗佈一結晶型高分子溶液後,進行一熱壓處理而成。 The wet film sheet as described in claim 6, wherein the polymer layer is formed by applying a crystalline polymer solution on the upper surface of the formed sheet and then performing a heat pressing treatment. 如請求項6所述之濕式膜板,其中該高分子層之厚度係介於2至3微米之間。 A wet membrane as described in claim 6, wherein the thickness of the polymer layer is between 2 and 3 microns.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201127609A (en) * 2010-02-04 2011-08-16 Maruzen Petrochem Co Ltd Resinous mold insert, molded article, and method of manufacturing molded article
TWM643608U (en) * 2023-05-04 2023-07-01 奇鼎科技股份有限公司 Wet diaphragm plate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201127609A (en) * 2010-02-04 2011-08-16 Maruzen Petrochem Co Ltd Resinous mold insert, molded article, and method of manufacturing molded article
TWM643608U (en) * 2023-05-04 2023-07-01 奇鼎科技股份有限公司 Wet diaphragm plate

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