TWI852595B - Driving circuit and driving method thereof - Google Patents
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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- G—PHYSICS
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
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- G09G2310/0267—Details of drivers for scan electrodes, other than drivers for liquid crystal, plasma or OLED displays
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
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Abstract
Description
本發明是有關於一種驅動電路及其驅動方法。 The present invention relates to a driving circuit and a driving method thereof.
Micro LED(微型LED)由於晶粒小,因此在彎曲、延展等性能上相較於大尺寸更佳。另外,微型LED面板也會因為能容納更多小晶粒而具備高解析、透明度高等優點。此外,單一顆Micro LED即已具有高亮度,也能達到省電效果。 Micro LED has smaller crystals, so it is better than large size in terms of bending and extension. In addition, Micro LED panels can accommodate more small crystals and have advantages such as high resolution and high transparency. In addition, a single Micro LED has high brightness and can also achieve power saving effects.
行動裝置隨著科技日新月異而日漸普及,人們對於手機與平板等需求也日漸增加。在近年的發展中,閘極驅動電路已高度整合於下層玻璃基板上,而使用閘極驅動電路陣列(gate-driver on array,GOA)的技術也成為中大型尺寸顯示器發展的重點。 Mobile devices are becoming more and more popular with the rapid development of technology, and people's demand for mobile phones and tablets is also increasing. In recent years, the gate driver circuit has been highly integrated on the lower glass substrate, and the technology of using gate-driver on array (GOA) has also become the focus of the development of medium and large-sized displays.
以目前技術而言,需要由顯示器內的積體電路輸出掃頻(sweep)信號給GOA驅動電路,再由GOA驅動電路輸出給顯示器的主動顯示區。但是這樣的做法會增加IC的輸出信號的數量,進而提高IC設計的複雜度,且使得電路佈局的複雜度提高。 此外,目前所用的GOA驅動電路無法自行調整所輸出的脈衝寬度。 With current technology, the integrated circuit in the display needs to output a sweep signal to the GOA driver circuit, which then outputs it to the active display area of the display. However, this approach will increase the number of IC output signals, thereby increasing the complexity of IC design and circuit layout. In addition, the currently used GOA driver circuit cannot adjust the output pulse width by itself.
故而,業界正在研發一種新的GOA驅動電路及其驅動方法,以期改善現有技術的上述或其他缺點。 Therefore, the industry is developing a new GOA driving circuit and its driving method in order to improve the above or other shortcomings of the existing technology.
根據本案一實例,提出一種驅動電路包括:一移位暫存器,用以控制該驅動電路的一輸出信號順序,該移位暫存器根據一第n起始信號、複數個時脈信號、一第一參考電壓與一第二參考電壓而產生一第n+1起始信號,其中,n為大於等於0的一整數;以及一掃頻信號產生電路,耦接至該移位暫存器,該掃頻信號產生電路根據一第n+m起始信號、一方波信號、一第三參考電壓與該第二參考電壓而產生一第n+1掃頻信號,其中,m為大於等於2的正整數。 According to an example of the present case, a driving circuit is proposed, including: a shift register for controlling an output signal sequence of the driving circuit, the shift register generates an n+1th starting signal according to an nth starting signal, a plurality of clock signals, a first reference voltage and a second reference voltage, wherein n is an integer greater than or equal to 0; and a sweep signal generating circuit coupled to the shift register, the sweep signal generating circuit generates an n+1th sweep signal according to an n+mth starting signal, a square wave signal, a third reference voltage and the second reference voltage, wherein m is a positive integer greater than or equal to 2.
根據本案另一實例,提出一種驅動方法,應用於包括一移位暫存器與一掃頻信號產生電路的一驅動電路,該驅動方法包括:於一第一階段時,由該移位暫存器根據一第n起始信號、複數個時脈信號、一第一參考電壓與一第二參考電壓而產生邏輯高的一第n+1起始信號,以及,由該掃頻信號產生電路根據一第n+m起始信號、一方波信號、一第三參考電壓與該第二參考電壓而產生邏輯高的一第n+1掃頻信號,其中,該第n+1掃頻信號等於該第三參考電壓,n為大於等於0的一整數,m為大於等於2的正整數;於一第二階段時,由該移位暫存器產生邏輯低的該第n+1 起始信號,以及由該掃頻信號產生電路輸出邏輯高的該第n+1掃頻信號,該第n+1掃頻信號等於該第三參考電壓;於一第三階段時,由該移位暫存器產生邏輯高的該第n+1起始信號,以及由該掃頻信號產生電路產生為浮接的該第n+1掃頻信號,透過一電容耦合效應,該第n+1掃頻信號的電位逐漸下降;以及於一第四階段時,由該移位暫存器產生邏輯高的該第n+1起始信號,以及,由該掃頻信號產生電路將該第n+1掃頻信號從浮接拉回成該第三參考電壓。 According to another embodiment of the present invention, a driving method is provided for a driving circuit including a shift register and a frequency sweep signal generating circuit. The driving method includes: in a first stage, the shift register generates a logically high n+1th start signal according to an nth start signal, a plurality of clock signals, a first reference voltage and a second reference voltage. signal, and the sweep signal generating circuit generates a logically higher n+1th sweep signal according to an n+mth starting signal, a square wave signal, a third reference voltage and the second reference voltage, wherein the n+1th sweep signal is equal to the third reference voltage, n is an integer greater than or equal to 0, and m is a positive integer greater than or equal to 2; in a second In the first stage, the shift register generates the n+1th start signal of logically low logic, and the sweep signal generating circuit outputs the n+1th sweep signal of logically high logic, and the n+1th sweep signal is equal to the third reference voltage; in the third stage, the shift register generates the n+1th start signal of logically high logic, and the sweep signal generates The circuit generates the floating n+1th sweep signal, and through a capacitive coupling effect, the potential of the n+1th sweep signal gradually decreases; and in a fourth stage, the shift register generates the logically high n+1th start signal, and the sweep signal generating circuit pulls the n+1th sweep signal back from floating to the third reference voltage.
為了對本發明之上述及其他方面有更佳的瞭解,下文特舉實施例,並配合所附圖式詳細說明如下: In order to better understand the above and other aspects of the present invention, the following is a specific example and a detailed description with the attached drawings as follows:
100:驅動電路 100:Drive circuit
110:移位暫存器 110: Shift register
120:掃頻信號產生電路 120: Sweep signal generating circuit
T1~T13:電晶體 T1~T13: Transistor
C1~C2:電容 C1~C2: Capacitor
P1~P4:階段 P1~P4: Stage
300:驅動電路 300:Drive circuit
310:移位暫存器 310: Shift register
320:掃頻信號產生電路 320: Sweep signal generating circuit
322:多工器 322:Multiplexer
510~540:步驟 510~540: Steps
第1圖繪示根據本案一實施例的驅動電路的電路架構圖。 Figure 1 shows a circuit diagram of a driving circuit according to an embodiment of the present invention.
第2A圖至第2D圖顯示根據本案一實施例的驅動電路的階段操作圖。 Figures 2A to 2D show the stage operation diagrams of the driving circuit according to an embodiment of the present invention.
第3圖繪示根據本案另一實施例的驅動電路的電路架構圖。 Figure 3 shows a circuit diagram of a driving circuit according to another embodiment of the present invention.
第4A圖至第4I圖顯示根據本案一實施例中的多種模擬圖。 Figures 4A to 4I show various simulation diagrams according to an embodiment of the present invention.
第5圖顯示根據本案一實施例的驅動方法的流程圖。 Figure 5 shows a flow chart of a driving method according to an embodiment of the present invention.
本說明書的技術用語係參照本技術領域之習慣用語,如本說明書對部分用語有加以說明或定義,該部分用語之解釋係以本說明書之說明或定義為準。本揭露之各個實施例分別具有一 或多個技術特徵。在可能實施的前提下,本技術領域具有通常知識者可選擇性地實施任一實施例中部分或全部的技術特徵,或者選擇性地將這些實施例中部分或全部的技術特徵加以組合。 The technical terms in this manual refer to the customary terms in this technical field. If this manual explains or defines some terms, the interpretation of these terms shall be based on the explanation or definition in this manual. Each embodiment disclosed in this disclosure has one or more technical features. Under the premise of possible implementation, a person with ordinary knowledge in this technical field can selectively implement some or all of the technical features in any embodiment, or selectively combine some or all of the technical features in these embodiments.
第1圖繪示根據本案一實施例的驅動電路的電路架構圖。根據本案一實施例的驅動電路100包括:移位暫存器(shift register)110與掃頻信號產生電路120。在本案一實施例中,驅動電路100例如但不受限於是應用於微型LED面板的GOA驅動電路。但在本案其他實施例中,驅動電路100也可當成其他類型顯示面板的驅動電路,或者是,其他類型電子裝置(不受限於顯示面板)內的驅動電路。
FIG. 1 shows a circuit diagram of a driver circuit according to an embodiment of the present invention. The
移位暫存器110用以控制驅動電路100的GOA輸出信號的順序。移位暫存器110可以根據第n起始信號STV[n](n為大於等於0的整數)、複數個時脈信號CK1/CK2/CK3、高參考電壓VGH(亦可稱為第一參考電壓)與低參考電壓VGL(亦可稱為第二參考電壓)而產生第n+1起始信號STV[n+1]。驅動電路100亦可稱為第n級驅動電路。
The
掃頻信號產生電路120耦接至移位暫存器110。掃頻信號產生電路120用於產生與輸出掃頻信號。掃頻信號產生電路120可以根據第n+m起始信號STV[n+m](m為大於等於2的正整數)、高頻方波信號XCK、參考電壓VrefP(亦可稱為第三參考電壓)與低參考電壓VGL而產生第n+1掃頻信號EMOUT[n+1]。參考電壓VrefP例如但不受限於,為大於0V。
第n+1掃頻信號EMOUT[n+1]是,例如但不受限於為三角波信號。高頻方波信號XCK,例如但不受限於,頻率為MHz等級,週期為1~2μs,責任周期為50%。
The sweep
移位暫存器110包括:電晶體T1~T9。
The
電晶體T1包括:第一端接收第n起始信號STV[n],第二端,以及控制端耦接至第一端。 The transistor T1 includes: a first end receiving the nth start signal STV[n], a second end, and a control end coupled to the first end.
電晶體T2包括:第一端接收低參考電壓VGL,第二端,以及控制端接收時脈信號CK2/CK3/CK1之一。在本案一實施例中,當n=0、3、6、...時,驅動電路100的電晶體T2的控制端接收時脈信號CK2;當n=1、4、7、...時,驅動電路100的電晶體T2的控制端接收時脈信號CK3;以及當n=2、5、8、...時,驅動電路100的電晶體T2的控制端接收時脈信號CK1。
The transistor T2 includes: a first end receiving a low reference voltage VGL, a second end, and a control end receiving one of the clock signals CK2/CK3/CK1. In an embodiment of the present case, when n=0, 3, 6, ..., the control end of the transistor T2 of the
電晶體T3包括:第一端耦接至電晶體T2的第二端,第二端,以及控制端耦接至電晶體T1的第二端。 Transistor T3 includes: a first end coupled to the second end of transistor T2, a second end, and a control end coupled to the second end of transistor T1.
電晶體T4包括:第一端耦接至電晶體T3的第二端,第二端接收高參考電壓VGH,以及控制端耦接至電晶體T1的第二端。 Transistor T4 includes: a first end coupled to the second end of transistor T3, a second end receiving a high reference voltage VGH, and a control end coupled to the second end of transistor T1.
電晶體T5包括:第一端耦接至電晶體T1的第二端,第二端,以及控制端耦接至電晶體T2的第二端。 Transistor T5 includes: a first end coupled to the second end of transistor T1, a second end, and a control end coupled to the second end of transistor T2.
電晶體T6包括:第一端耦接至電晶體T5的第二端,第二端接收高參考電壓VGH,以及控制端耦接至電晶體T2的第二端。 Transistor T6 includes: a first end coupled to the second end of transistor T5, a second end receiving a high reference voltage VGH, and a control end coupled to the second end of transistor T2.
電晶體T7包括:第一端接收時脈信號CK1/CK2/CK3之一,第二端輸出第n+1起始信號STV[n+1],以及控制端耦接至電晶體T1的第二端。在本案一實施例中,當n=0、3、6、...時,驅動電路100的電晶體T7的第一端接收時脈信號CK1;當n=1、4、7、...時,驅動電路100的電晶體T7的第一端接收時脈信號CK2;以及當n=2、5、8、...時,驅動電路100的電晶體T7的第一端接收時脈信號CK3。
The transistor T7 includes: a first end receiving one of the clock signals CK1/CK2/CK3, a second end outputting the n+1th start signal STV[n+1], and a control end coupled to the second end of the transistor T1. In an embodiment of the present case, when n=0, 3, 6, ..., the first end of the transistor T7 of the
電晶體T8包括:第一端輸出第n+1起始信號STV[n+1],第二端接收高參考電壓VGH,以及控制端耦接至電晶體T2的第二端。 Transistor T8 includes: a first end outputting the n+1th start signal STV[n+1], a second end receiving a high reference voltage VGH, and a control end coupled to the second end of transistor T2.
電晶體T9包括:第一端耦接至電晶體T2的第二端,第二端,以及控制端耦接至電晶體T9的第二端。 Transistor T9 includes: a first end coupled to the second end of transistor T2, a second end, and a control end coupled to the second end of transistor T9.
掃頻信號產生電路120包括電晶體T10~T13、第一電容C1與第二電容C2。
The sweep
電晶體T10包括:第一端接收低參考電壓VGL,第二端耦接至電晶體T9的第二端,以及控制端接收第n+m起始信號STV[n+m]。 Transistor T10 includes: a first end receiving a low reference voltage VGL, a second end coupled to the second end of transistor T9, and a control end receiving an n+mth start signal STV[n+m].
電晶體T11包括:第一端接收參考電壓VrefP,第二端,以及控制端耦接至電晶體T1的第二端。 Transistor T11 includes: a first end receiving a reference voltage VrefP, a second end, and a control end coupled to the second end of transistor T1.
電晶體T12包括:第一端接收參考電壓VrefP,第二端耦接至電晶體T11的第二端,以及控制端耦接至電晶體T9的第二端。 Transistor T12 includes: a first end receiving a reference voltage VrefP, a second end coupled to the second end of transistor T11, and a control end coupled to the second end of transistor T9.
電晶體T13包括:第一端耦接至電晶體T11的第二端,第二端輸出第n+1掃頻信號EMOUT[n+1],以及控制端接收高頻方波信號XCK。在本案一實施例中,由於高頻方波信號XCK的頻率較高,基本上,可以將電晶體T13視為實質性永遠為導通。 Transistor T13 includes: a first end coupled to the second end of transistor T11, a second end outputting the n+1th frequency sweep signal EMOUT[n+1], and a control end receiving the high-frequency square wave signal XCK. In an embodiment of the present case, since the frequency of the high-frequency square wave signal XCK is relatively high, basically, transistor T13 can be regarded as substantially always turned on.
第一電容C1用於穩壓。第一電容C1耦接於電晶體T9的第二端與高參考電壓VGH之間。 The first capacitor C1 is used for voltage stabilization. The first capacitor C1 is coupled between the second end of the transistor T9 and the high reference voltage VGH.
第二電容C2用於控制第n+1掃頻信號EMOUT[n+1]的充放電速度。第二電容C2耦接於參考電壓VrefP與電晶體T11的第二端之間。 The second capacitor C2 is used to control the charging and discharging speed of the n+1th scanning signal EMOUT[n+1]. The second capacitor C2 is coupled between the reference voltage VrefP and the second end of the transistor T11.
第2A圖至第2D圖顯示根據本案一實施例的驅動電路100的階段操作圖。本案一實施例的驅動電路100有4個階段操作,分別標示為P1~P4。
Figures 2A to 2D show the stage operation diagrams of the driving
於階段P1時,第n起始信號STV[n]為邏輯低把電晶體T1導通,所以,第n起始信號STV[n]可透過電晶體T1而導通電晶體T7與電晶體T11。同時,第n起始信號STV[n]可透過電晶體T1而導通電晶體T3與電晶體T4。高參考電壓VGH透過導通的電晶體T3與電晶體T4而把電晶體T5、T6、T8、T12關閉。由於電晶體T7為導通,所以,電晶體T7產生邏輯高的第n+1起始信號STV[n+1](CK1(H)=STV[n+1](H))。由於電晶體T11與T13為導通,所以,電晶體T13輸出第n+1掃頻信號EMOUT[n+1]等於參考電壓VrefP(EMOUT[n+1]=VrefP),其中, VrefP>0V。 In phase P1, the nth start signal STV[n] is logically low and turns on transistor T1. Therefore, the nth start signal STV[n] can pass through transistor T1 to turn on transistor T7 and transistor T11. At the same time, the nth start signal STV[n] can pass through transistor T1 to turn on transistor T3 and transistor T4. The high reference voltage VGH turns off transistors T5, T6, T8, and T12 through the turned-on transistors T3 and T4. Since transistor T7 is turned on, transistor T7 generates the logically high n+1th start signal STV[n+1] (CK1(H)=STV[n+1](H)). Since transistors T11 and T13 are turned on, transistor T13 outputs the n+1th sweep signal EMOUT[n+1] which is equal to the reference voltage VrefP (EMOUT[n+1]=VrefP), where VrefP>0V.
於階段P2時,第n起始信號STV[n]轉為邏輯高,故將電晶體T1關閉。但電晶體T1的關閉並不會影響到電晶體T7與T11的閘極電壓,所以,電晶體T7與T11仍為導通。由於電晶體T7為導通,所以,電晶體T7產生邏輯低的第n+1起始信號STV[n+1](CK1(L)=STV[n+1](L))。由於電晶體T11與T13為導通,所以,電晶體T13輸出第n+1掃頻信號EMOUT[n+1]等於參考電壓VrefP(EMOUT[n+1]=VrefP)。 In phase P2, the nth start signal STV[n] turns to a logical high, so transistor T1 is turned off. However, the turning off of transistor T1 does not affect the gate voltage of transistors T7 and T11, so transistors T7 and T11 are still turned on. Since transistor T7 is turned on, transistor T7 generates a logically low n+1th start signal STV[n+1] (CK1(L)=STV[n+1](L)). Since transistors T11 and T13 are turned on, transistor T13 outputs the n+1th sweep signal EMOUT[n+1] equal to the reference voltage VrefP (EMOUT[n+1]=VrefP).
於階段P3時,時脈信號CK2為邏輯低而時脈信號CK1與CK3為邏輯高,第n起始信號STV[n]仍為邏輯高,所以,電晶體T1為關閉。由於時脈信號CK2為邏輯低,所以,電晶體T2為導通。由於電晶體T2為導通,低參考電壓VGL透過電晶體T2而導通電晶體T5、T6與T8。由於電晶體T5與T6為導通,高參考電壓VGH透過電晶體T5與T6而關閉電晶體T7與T11。由於電晶體T8為導通,所以,高參考電壓VGH透過電晶體T8而輸出為邏輯高的第n+1起始信號STV[n+1](VGH=STV[n+1](H))。由於電晶體T11與T12為關閉,所以,第n+1掃頻信號EMOUT[n+1]為浮接。透過電晶體T13的高速切換導通,靠第二電容C2的耦合效應,使得第n+1掃頻信號EMOUT[n+1]的電位逐漸下降,成為有斜率的信號。 In phase P3, the clock signal CK2 is logically low while the clock signals CK1 and CK3 are logically high. The nth start signal STV[n] is still logically high, so the transistor T1 is off. Since the clock signal CK2 is logically low, the transistor T2 is on. Since the transistor T2 is on, the low reference voltage VGL passes through the transistor T2 to turn on the transistors T5, T6 and T8. Since the transistors T5 and T6 are on, the high reference voltage VGH passes through the transistors T5 and T6 to turn off the transistors T7 and T11. Since transistor T8 is turned on, the high reference voltage VGH is output as the logically high n+1th start signal STV[n+1] (VGH=STV[n+1](H)) through transistor T8. Since transistors T11 and T12 are turned off, the n+1th sweep signal EMOUT[n+1] is floating. Through the high-speed switching of transistor T13, the potential of the n+1th sweep signal EMOUT[n+1] gradually decreases due to the coupling effect of the second capacitor C2, becoming a signal with a slope.
於階段P4時,時脈信號CK3切為邏輯低而時脈信號CK1與CK2為邏輯高,電晶體T2為關閉。在此,以m=2來 做說明,但當知本案並不受限於此,本案其他實施例可應用至其他m值,此皆在本案精神範圍內。m=2,由於第n+2起始信號STV[n+2]為邏輯低,將電晶體T10導通,使得低參考電壓VGL透過電晶體T10而將電晶體T12、T9、T8、T5與T6導通。由於電晶體T5與T6為導通,高參考電壓VGH透過電晶體T5與T6使得電晶體T7與T11仍為關閉。電晶體T8為導通,所以,高參考電壓VGH透過電晶體T8而輸出為邏輯高的第n+1起始信號STV[n+1](VGH=STV[n+1](H))。由於電晶體T12為導通,使得參考電壓VrefP透過電晶體T12與T13而將第n+1掃頻信號EMOUT[n+1]從浮接狀態拉高回成參考電壓VrefP(EMOUT[n+1]=VrefP)。 In phase P4, the clock signal CK3 is switched to a logical low and the clock signals CK1 and CK2 are logical high, and the transistor T2 is turned off. Here, m=2 is used for illustration, but it should be noted that the present invention is not limited thereto. Other embodiments of the present invention can be applied to other m values, which are all within the spirit of the present invention. m=2, since the n+2 start signal STV[n+2] is a logical low, the transistor T10 is turned on, so that the low reference voltage VGL passes through the transistor T10 and turns on the transistors T12, T9, T8, T5 and T6. Since the transistors T5 and T6 are turned on, the high reference voltage VGH passes through the transistors T5 and T6, so that the transistors T7 and T11 are still turned off. Transistor T8 is turned on, so the high reference voltage VGH is output as the logically high n+1th start signal STV[n+1] (VGH=STV[n+1](H)) through transistor T8. Since transistor T12 is turned on, the reference voltage VrefP passes through transistors T12 and T13 to pull the n+1th sweep signal EMOUT[n+1] from the floating state back to the reference voltage VrefP (EMOUT[n+1]=VrefP).
在本案一實施例中,第n+m起始信號STV[n+m]可以決定電晶體T10何時導通,而當電晶體T10導通時,掃頻信號EMOUT會結束下降。亦即,在本案一實施例中,掃頻信號EMOUT結束下降的時序取決於第n+m起始信號STV[n+m],詳細地說,掃頻信號EMOUT結束下降的時序取決於第n+m起始信號STV[n+m]的轉態至邏輯低。當第n+m起始信號STV[n+m]轉態至邏輯低時,掃頻信號EMOUT會結束下降並上升至參考電壓VrefP。所以,掃頻信號EMOUT會結束下降並上升至參考電壓VrefP的時序未必在階段P4內。 In an embodiment of the present invention, the n+mth start signal STV[n+m] can determine when the transistor T10 is turned on, and when the transistor T10 is turned on, the sweep signal EMOUT will stop falling. That is, in an embodiment of the present invention, the timing of the sweep signal EMOUT stopping falling depends on the n+mth start signal STV[n+m]. Specifically, the timing of the sweep signal EMOUT stopping falling depends on the transition of the n+mth start signal STV[n+m] to a logical low. When the n+mth start signal STV[n+m] transitions to a logical low, the sweep signal EMOUT stops falling and rises to the reference voltage VrefP. Therefore, the timing at which the sweep signal EMOUT stops falling and rises to the reference voltage VrefP may not be within phase P4.
至於電晶體T10的汲極電壓(亦即電晶體T12的閘極電壓)可以被電晶體T9所保護,亦即,當電晶體T9為關閉時, 電晶體T10的汲極電壓(電晶體T12的閘極電壓)不會被電晶體T8的閘極電壓所影響。 As for the drain voltage of transistor T10 (that is, the gate voltage of transistor T12), it can be protected by transistor T9, that is, when transistor T9 is turned off, the drain voltage of transistor T10 (the gate voltage of transistor T12) will not be affected by the gate voltage of transistor T8.
由上述可知,在本案一實施例中,透過驅動電路100的4階段操作可以產生三角波的第n+1掃頻信號EMOUT[n+1]。
From the above, it can be seen that in an embodiment of the present case, the n+1th sweep signal EMOUT[n+1] of a triangular wave can be generated through the 4-stage operation of the driving
第3圖繪示根據本案另一實施例的驅動電路的電路架構圖。根據本案一實施例的驅動電路300包括:移位暫存器310與掃頻信號產生電路320。在本案一實施例中,驅動電路300例如但不受限於是應用於微型LED面板的GOA驅動電路。但在本案其他實施例中,驅動電路300也可當成其他類型顯示面板的驅動電路,或者是,其他類型電子裝置(不受限於顯示面板)內的驅動電路。
FIG. 3 shows a circuit diagram of a driver circuit according to another embodiment of the present invention. The
第3圖的移位暫存器310基本上相同或相似於第1圖的移位暫存器110,故其細節在此省略。
The
掃頻信號產生電路320不同於掃頻信號產生電路120之處在於,掃頻信號產生電路320的多工器322用以取代掃頻信號產生電路120的電晶體T10。
The difference between the sweep
多工器322受控於多工器切換信號MUX_SW而從多種起始信號MULTI_STV中擇一,其中,多種起始信號MULTI_STV例如是包括:第n+2起始信號STV[n+2]~第n+m起始信號STV[n+m]。或者,多種起始信號MULTI_STV也可稱為複數個不同起始信號。
The
至於驅動電路300的操作原則上相同或相似於第1
圖的驅動電路100,故其細節在此省略。不過,於驅動電路300的階段P4時,時脈信號CK3切為邏輯低而時脈信號CK1與CK2為邏輯高,電晶體T2為關閉。當第n+2起始信號STV[n+2]~第n+m起始信號STV[n+m]之一被多工器切換信號MUX_SW所選擇時,該多工器322使得低參考電壓VGL透過多工器322而將電晶體T12、T9、T8、T5與T6導通。由於電晶體T5與T6為導通,高參考電壓VGH透過電晶體T5與T6使得電晶體T7與T11仍為關閉。電晶體T8為導通,所以,高參考電壓VGH透過電晶體T8而輸出為邏輯高的第n+1起始信號STV[n+1](VGH=STV[n+1](H))。由於電晶體T12為導通,使得參考電壓VrefP透過電晶體T12與T13而將第n+1掃頻信號EMOUT[n+1]從浮接狀態拉高回成參考電壓VrefP(EMOUT[n+1]=VrefP)。於第3圖中,該第n+1掃頻信號的一結束下降時序取決於該多工器切換信號所選擇的該些不同起始信號之一。
The operation principle of the driving
在第3圖的實施例中,用多工器322取代電晶體T10,依需要(如用程式的方式)來從多個候選值中選擇m值,提高可調整性。
In the embodiment of FIG. 3, a
第4A圖至第4I圖顯示根據本案一實施例中的多種模擬圖。在第4A圖至第4I圖中,有2個不同變數(m值與高頻方波信號XCK),每個變數有3種不同變化。 Figures 4A to 4I show various simulation diagrams according to an embodiment of the present invention. In Figures 4A to 4I, there are 2 different variables (m value and high-frequency square wave signal XCK), and each variable has 3 different changes.
在第4A圖至第4C圖中,有3種不同m值但高頻 方波信號XCK則是一樣的。第4A圖至第4C圖中,m值分別為m=2、m=3與m=4。第4A圖至第4C圖中,高頻方波信號XCK可使得第n+1掃頻信號EMOUT[n+1]有高的下降斜率。 In Figures 4A to 4C, there are 3 different m values but the high-frequency square wave signal XCK is the same. In Figures 4A to 4C, the m values are m=2, m=3 and m=4 respectively. In Figures 4A to 4C, the high-frequency square wave signal XCK can make the n+1th sweep signal EMOUT[n+1] have a high falling slope.
在第4D圖至第4F圖中,有3種不同m值但高頻方波信號XCK則是一樣的。第4D圖至第4F圖中,m值分別為m=2、m=3與m=4。第4D圖至第4F圖中,高頻方波信號XCK可使得第n+1掃頻信號EMOUT[n+1]有中的下降斜率。 In Figures 4D to 4F, there are 3 different m values but the high-frequency square wave signal XCK is the same. In Figures 4D to 4F, the m values are m=2, m=3 and m=4 respectively. In Figures 4D to 4F, the high-frequency square wave signal XCK can make the n+1th sweep signal EMOUT[n+1] have a medium downward slope.
在第4G圖至第4I圖中,有3種不同m值但高頻方波信號XCK則是一樣的,其中,第4G圖至第4I圖中,m值分別為m=2、m=3與m=4。第4G圖至第4I圖中,高頻方波信號XCK可使得第n+1掃頻信號EMOUT[n+1]有低的下降斜率。 In Figures 4G to 4I, there are 3 different m values but the high-frequency square wave signal XCK is the same. In Figures 4G to 4I, the m values are m=2, m=3 and m=4 respectively. In Figures 4G to 4I, the high-frequency square wave signal XCK can make the n+1th sweep signal EMOUT[n+1] have a low falling slope.
由第4A圖至第4I圖可知,在本案一實施例中,當m值愈大,掃頻信號EMOUT的寬度就愈寬。 As can be seen from Figures 4A to 4I, in an embodiment of the present invention, the larger the m value, the wider the width of the sweep signal EMOUT.
第5圖顯示根據本案一實施例的驅動方法的流程圖。驅動方法應用於包括一移位暫存器與一掃頻信號產生電路的一驅動電路。該驅動方法包括:(510)於一第一階段時,由該移位暫存器根據一第n起始信號、複數個時脈信號、一第一參考電壓與一第二參考電壓而產生邏輯高的一第n+1起始信號,以及,由該掃頻信號產生電路根據一第n+m起始信號、一方波信號、一第三參考電壓與該第二參考電壓而產生邏輯高的一第n+1掃頻信號,其中,該第n+1掃頻信號等於該第三參考電壓,n為大於等於0的一整數,m為大於等於2的正整數;(520)於一第二階段時,由該 移位暫存器產生邏輯低的該第n+1起始信號,以及由該掃頻信號產生電路輸出邏輯高的該第n+1掃頻信號,該第n+1掃頻信號等於該第三參考電壓;(530)於一第三階段時,由該移位暫存器產生邏輯高的該第n+1起始信號,以及由該掃頻信號產生電路產生為浮接的該第n+1掃頻信號,透過一電容耦合效應,該第n+1掃頻信號的電位逐漸下降;以及,(540)於一第四階段時,由該移位暫存器產生邏輯高的該第n+1起始信號,以及,由該掃頻信號產生電路將該第n+1掃頻信號從浮接拉回成該第三參考電壓。 FIG. 5 is a flow chart of a driving method according to an embodiment of the present invention. The driving method is applied to a driving circuit including a shift register and a sweep signal generating circuit. The driving method includes: (510) in a first stage, the shift register generates a logically high n+1th start signal according to an nth start signal, a plurality of clock signals, a first reference voltage and a second reference voltage, and the sweep signal generating circuit generates a logically high n+1th start signal according to an n+mth start signal, a square wave signal, A third reference voltage and the second reference voltage are used to generate a logically high n+1th sweep signal, wherein the n+1th sweep signal is equal to the third reference voltage, n is an integer greater than or equal to 0, and m is a positive integer greater than or equal to 2; (520) in a second stage, the shift register generates a logically low n+1th sweep signal The n+1th start signal is generated by the shift register, and the n+1th start signal is generated by the sweep signal generating circuit, and the n+1th sweep signal is equal to the third reference voltage; (530) in a third stage, the n+1th start signal is generated by the shift register, and the n+1th start signal is generated by the sweep signal generating circuit. 1 sweep signal, through a capacitive coupling effect, the potential of the n+1 sweep signal gradually decreases; and, (540) in a fourth stage, the shift register generates the n+1 start signal of logical high, and the sweep signal generating circuit pulls the n+1 sweep signal back from floating to the third reference voltage.
此外,在本案一實施例,改變掃頻信號EMOUT的下降斜率的因子有,例如但不受限於,高頻方波信號XCK的頻率及/或電壓及/或責任周期等,電晶體T13的顆數,電晶體T13的長寬比(W/L)、第二電容C2的電容值。此外,在本案一實施例中,可以並聯複數顆電晶體T13。 In addition, in an embodiment of the present case, the factors that change the falling slope of the sweep signal EMOUT include, for example but not limited to, the frequency and/or voltage and/or duty cycle of the high-frequency square wave signal XCK, the number of transistors T13, the aspect ratio (W/L) of the transistor T13, and the capacitance value of the second capacitor C2. In addition, in an embodiment of the present case, a plurality of transistors T13 can be connected in parallel.
如上述,於本案一實施例中,驅動電路的掃頻信號產生電路可以自行產生與輸出掃頻信號,故而,可以降低電子裝置(如微型LED顯示面板)內的積體電路設計複雜度。 As mentioned above, in one embodiment of the present invention, the sweep signal generating circuit of the driving circuit can generate and output the sweep signal by itself, thereby reducing the complexity of the integrated circuit design in the electronic device (such as a micro LED display panel).
此外,在本案一實施例中,透過不同的m值可以調整掃頻信號EMOUT的脈衝寬度,使得本案實施例的驅動電路可以有更大的應用可能性。 In addition, in an embodiment of the present case, the pulse width of the sweep signal EMOUT can be adjusted through different m values, so that the driving circuit of the embodiment of the present case can have greater application possibilities.
此外,在本案一實施例中,透過多種方式可以調整掃頻信號EMOUT的下降斜率,使得本案實施例的驅動電路可以有更大的應用可能性。 In addition, in an embodiment of the present case, the falling slope of the frequency sweep signal EMOUT can be adjusted in a variety of ways, so that the driving circuit of the embodiment of the present case can have greater application possibilities.
在本案一實施例中,驅動電路可以皆使用相同類型的MOS電晶體,故而可以節省製程道數。在第1圖與第3圖乃是皆使用PMOS電晶體,但本案並不受限於此。 In one embodiment of the present invention, the driving circuits can all use the same type of MOS transistors, thereby saving the number of process steps. PMOS transistors are used in Figures 1 and 3, but the present invention is not limited to this.
綜上所述,雖然本發明已以實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。 In summary, although the present invention has been disclosed as above by the embodiments, it is not intended to limit the present invention. Those with common knowledge in the technical field to which the present invention belongs can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be subject to the scope defined in the attached patent application.
510-540:步驟 510-540: Steps
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| TW (1) | TWI852595B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104934010A (en) * | 2015-07-13 | 2015-09-23 | 京东方科技集团股份有限公司 | Driving method of display panel, grid drive circuit and display apparatus |
| US20180182341A1 (en) * | 2015-08-21 | 2018-06-28 | Panasonic Liquid Crystal Display Co., Ltd. | Drive circuit, display device, and drive method |
| US20190130857A1 (en) * | 2017-03-02 | 2019-05-02 | Boe Technology Group Co., Ltd. | Shift register and drive method thereof, gate drive device and display device |
| US20190325845A1 (en) * | 2018-04-19 | 2019-10-24 | Shanghai Tianma AM-OLED Co., Ltd. | Driving circuit, method for controlling light emission and display device |
| US20220270532A1 (en) * | 2020-05-14 | 2022-08-25 | Boe Technology Group Co., Ltd. | Shift register, gate drive circuit, display device, and driving method for same |
| TW202301308A (en) * | 2021-06-18 | 2023-01-01 | 友達光電股份有限公司 | Display device |
-
2023
- 2023-05-30 TW TW112120093A patent/TWI852595B/en active
- 2023-10-31 CN CN202311429353.9A patent/CN117373376A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104934010A (en) * | 2015-07-13 | 2015-09-23 | 京东方科技集团股份有限公司 | Driving method of display panel, grid drive circuit and display apparatus |
| US20180182341A1 (en) * | 2015-08-21 | 2018-06-28 | Panasonic Liquid Crystal Display Co., Ltd. | Drive circuit, display device, and drive method |
| US20190130857A1 (en) * | 2017-03-02 | 2019-05-02 | Boe Technology Group Co., Ltd. | Shift register and drive method thereof, gate drive device and display device |
| US20190325845A1 (en) * | 2018-04-19 | 2019-10-24 | Shanghai Tianma AM-OLED Co., Ltd. | Driving circuit, method for controlling light emission and display device |
| US20220270532A1 (en) * | 2020-05-14 | 2022-08-25 | Boe Technology Group Co., Ltd. | Shift register, gate drive circuit, display device, and driving method for same |
| TW202301308A (en) * | 2021-06-18 | 2023-01-01 | 友達光電股份有限公司 | Display device |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202447586A (en) | 2024-12-01 |
| CN117373376A (en) | 2024-01-09 |
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