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TWI849515B - Circuit board and method of fabricating the same - Google Patents

Circuit board and method of fabricating the same Download PDF

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Publication number
TWI849515B
TWI849515B TW111137090A TW111137090A TWI849515B TW I849515 B TWI849515 B TW I849515B TW 111137090 A TW111137090 A TW 111137090A TW 111137090 A TW111137090 A TW 111137090A TW I849515 B TWI849515 B TW I849515B
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layer
shielding layer
forming
circuit
silicone rubber
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TW111137090A
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Chinese (zh)
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TW202415215A (en
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陳伯元
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大陸商鵬鼎控股(深圳)股份有限公司
大陸商慶鼎精密電子(淮安)有限公司
鵬鼎科技股份有限公司
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0094Filling or covering plated through-holes or blind plated vias, e.g. for masking or for mechanical reinforcement
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0216Reduction of cross-talk, noise or electromagnetic interference
    • H05K1/0218Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
    • H05K1/0224Patterned shielding planes, ground planes or power planes
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/28Applying non-metallic protective coatings

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Structure Of Printed Boards (AREA)

Abstract

A circuit board and a method of fabricating the same are provided in the present invention. The method includes filling a first silicone rubber material within a first shielding layer, and the first silicone rubber material wraps the first conductive via connecting to a first circuit layer; and filling a second silicone rubber material within a second shielding layer, and the second silicone rubber material wraps the second conductive via connecting to a second circuit layer. The first shielding layer and the second shielding layer include a low-frequency shielding layer and a high-frequency shielding layer, respectively. The silicone rubber material can be shielding material of electromagnetic radiation; thus, the circuit board of the present invention can shield the electromagnetic radiation in line of conducting signal effectively.

Description

電路板及其製造方法Circuit board and manufacturing method thereof

本發明是關於一種電路板及其製造方法,特別是關於一種具有電磁屏蔽效果的電路板及其製造方法。The present invention relates to a circuit board and a manufacturing method thereof, and in particular to a circuit board with electromagnetic shielding effect and a manufacturing method thereof.

電子設備產生的訊號包含高頻訊號及低頻訊號,且其均會產生電磁波。每一個電子設備產生的電磁波可能對彼此造成干擾,即所謂電磁干擾(electromagnetic interference,EMI)。再者,隨著電子設備產品的小型化,其產生的輻射電磁場干擾也更為嚴重。因此,為了減少電磁干擾的問題,須改善電子元件的電磁屏蔽效果。The signals generated by electronic devices include high-frequency signals and low-frequency signals, and both of them will generate electromagnetic waves. The electromagnetic waves generated by each electronic device may interfere with each other, which is called electromagnetic interference (EMI). Furthermore, with the miniaturization of electronic equipment products, the radiated electromagnetic field interference they generate is also more serious. Therefore, in order to reduce the problem of electromagnetic interference, the electromagnetic shielding effect of electronic components must be improved.

本發明的一態樣是提供一種電路板的製造方法,其包含設置多個矽橡膠材料在線路層上,以屏蔽訊號產生的電磁輻射。One aspect of the present invention is to provide a method for manufacturing a circuit board, which includes disposing a plurality of silicone rubber materials on a circuit layer to shield electromagnetic radiation generated by a signal.

本發明的另一態樣是提供一種電路板,由上述態樣的方法所製得。Another aspect of the present invention is to provide a circuit board made by the method of the above aspect.

根據本發明的一態樣,提供一種電路板的製造方法,其包含形成凹槽在絕緣基板中;放置電子元件於所述凹槽中,其中所述電子元件包含第一線路層;形成第一屏蔽層在所述絕緣基板及所述電子元件上,其中所述第一屏蔽層包含第一低頻屏蔽層及第一高頻屏蔽層;形成多個第一開口在所述第一屏蔽層中,以暴露出所述第一線路層;填充多個第一矽橡膠材料在所述多個第一開口內;形成多個第一導電盲孔在所述多個第一矽橡膠材料中,其中所述多個第一導電盲孔電性連接所述第一線路層;形成複合層在所述第一屏蔽層及所述多個第一矽橡膠材料上,其中所述複合層包含石墨烯層及金屬層;圖案化所述複合層,以形成第二線路層;形成第二屏蔽層在所述第二線路層上,其中所述第二屏蔽層包含第二低頻屏蔽層及第二高頻屏蔽層;形成多個第二開口在所述第二屏蔽層上,以暴露出所述第二線路層;填充多個第二矽橡膠材料在所述多個第二開口內;以及形成多個第二導電盲孔在所述多個第二矽橡膠材料中。According to one aspect of the present invention, a method for manufacturing a circuit board is provided, which includes forming a groove in an insulating substrate; placing an electronic component in the groove, wherein the electronic component includes a first circuit layer; forming a first shielding layer on the insulating substrate and the electronic component, wherein the first shielding layer includes a first low-frequency shielding layer and a first high-frequency shielding layer; forming a plurality of first openings in the first shielding layer to expose the first circuit layer; filling a plurality of first silicone rubber materials in the plurality of first openings; forming a plurality of first conductive blind holes in the plurality of first silicone rubber materials, wherein the plurality of first The conductive blind via is electrically connected to the first circuit layer; a composite layer is formed on the first shielding layer and the plurality of first silicone rubber materials, wherein the composite layer includes a graphene layer and a metal layer; the composite layer is patterned to form a second circuit layer; a second shielding layer is formed on the second circuit layer, wherein the second shielding layer includes a second low-frequency shielding layer and a second high-frequency shielding layer; a plurality of second openings are formed on the second shielding layer to expose the second circuit layer; a plurality of second silicone rubber materials are filled in the plurality of second openings; and a plurality of second conductive blind vias are formed in the plurality of second silicone rubber materials.

根據本發明的一實施例,在形成所述第二屏蔽層之前,上述方法還包含形成多個導電孔在所述第二線路層中,其中所述多個導電孔分別電性連接所述多個第一導電盲孔。According to an embodiment of the present invention, before forming the second shielding layer, the method further comprises forming a plurality of conductive vias in the second circuit layer, wherein the plurality of conductive vias are electrically connected to the plurality of first conductive blind vias respectively.

根據本發明的一實施例,形成所述複合層的步驟包含形成絕緣層在所述第一屏蔽層及所述多個第一矽橡膠材料上;形成所述石墨烯層在所述絕緣層上;以及形成所述金屬層在所述石墨烯層上。According to an embodiment of the present invention, the step of forming the composite layer includes forming an insulating layer on the first shielding layer and the plurality of first silicone rubber materials; forming the graphene layer on the insulating layer; and forming the metal layer on the graphene layer.

根據本發明的一實施例,上述方法還包含形成至少一個第三開口在所述第二屏蔽層上並在所述多個第二開口之間,以暴露出所述絕緣層;以及填充第三矽橡膠材料於所述至少一個第三開口內。According to an embodiment of the present invention, the method further comprises forming at least one third opening on the second shielding layer and between the plurality of second openings to expose the insulating layer; and filling a third silicone rubber material into the at least one third opening.

根據本發明的一實施例,上述圖案化所述複合層的步驟包含移除所述金屬層;以及利用電漿圖案化所述石墨烯層。According to an embodiment of the present invention, the step of patterning the composite layer includes removing the metal layer; and patterning the graphene layer using plasma.

根據本發明的一實施例,在放置所述電子元件於所述凹槽中之前,上述方法還包含形成黏接層在所述凹槽的底部;以及放置所述電子元件於所述黏接層上。According to an embodiment of the present invention, before placing the electronic component in the groove, the method further comprises forming an adhesive layer at the bottom of the groove; and placing the electronic component on the adhesive layer.

根據本發明的一實施例,形成所述第一屏蔽層的步驟包含形成第一介質層在所述絕緣基板及所述電子元件上;形成所述第一低頻屏蔽層在所述第一介質層上;以及形成所述第一高頻屏蔽層在所述第一低頻屏蔽層上。According to one embodiment of the present invention, the step of forming the first shielding layer includes forming a first dielectric layer on the insulating substrate and the electronic element; forming the first low-frequency shielding layer on the first dielectric layer; and forming the first high-frequency shielding layer on the first low-frequency shielding layer.

根據本發明的一實施例,形成所述第二屏蔽層的步驟形成第二介質層在所述第二線路層上;形成所述第二低頻屏蔽層在所述第二介質層上;形成所述第二高頻屏蔽層在所述第二低頻屏蔽層上;以及形成第三介質層在所述第二高頻屏蔽層上。According to one embodiment of the present invention, the step of forming the second shielding layer is to form a second dielectric layer on the second circuit layer; to form the second low-frequency shielding layer on the second dielectric layer; to form the second high-frequency shielding layer on the second low-frequency shielding layer; and to form a third dielectric layer on the second high-frequency shielding layer.

根據本發明的另一態樣,提供一種電路板,其包含具有凹槽的絕緣基板、設置在所述凹槽中的電子元件、設置在所述電子元件之頂表面上的第一線路層、設置在所述絕緣基板及所述電子元件上的第一屏蔽層、設置在所述第一屏蔽層中的多個第一矽橡膠材料、設置在所述第一屏蔽層中的多個第一矽橡膠材料、設置在所述第一屏蔽層上的第二線路層、設置在所述第二線路層上的第二屏蔽層、設置在所述第二屏蔽層中的多個第二矽橡膠材料以及設置在所述多個第二導電盲孔中的多個第二導電盲孔。所述第一屏蔽層與所述電子元件重疊。所述第一導電盲孔電性連接所述第一線路層,且所述第二導電盲孔電性連接所述第二線路層。According to another aspect of the present invention, a circuit board is provided, which includes an insulating substrate having a groove, an electronic component disposed in the groove, a first circuit layer disposed on the top surface of the electronic component, a first shielding layer disposed on the insulating substrate and the electronic component, a plurality of first silicone rubber materials disposed in the first shielding layer, a plurality of first silicone rubber materials disposed in the first shielding layer, a second circuit layer disposed on the first shielding layer, a second shielding layer disposed on the second circuit layer, a plurality of second silicone rubber materials disposed in the second shielding layer, and a plurality of second conductive blind vias disposed in the plurality of second conductive blind vias. The first shielding layer overlaps with the electronic component. The first conductive blind via is electrically connected to the first circuit layer, and the second conductive blind via is electrically connected to the second circuit layer.

根據本發明的一實施例,所述第一屏蔽層包含設置在所述絕緣基板及所述電子元件上的第一介質層、設置在所述第一介質層上的第一低頻屏蔽層以及設置在所述第一低頻屏蔽層上的第一高頻屏蔽層。According to an embodiment of the present invention, the first shielding layer includes a first dielectric layer disposed on the insulating substrate and the electronic element, a first low-frequency shielding layer disposed on the first dielectric layer, and a first high-frequency shielding layer disposed on the first low-frequency shielding layer.

根據本發明的一實施例,所述第二屏蔽層包含設置在所述第二線路層上的第二介質層、設置在所述第二線路層上的第二介質層、設置在所述第二低頻屏蔽層上的第二高頻屏蔽層以及設置在所述第二高頻屏蔽層上的第三介質層。According to one embodiment of the present invention, the second shielding layer includes a second dielectric layer disposed on the second circuit layer, a second dielectric layer disposed on the second circuit layer, a second high-frequency shielding layer disposed on the second low-frequency shielding layer, and a third dielectric layer disposed on the second high-frequency shielding layer.

根據本發明的一實施例,上述電路板還包含設置在所述第二線路層中的多個導電孔。所述多個導電孔分別電性連接所述多個第一導電盲孔。According to an embodiment of the present invention, the circuit board further comprises a plurality of conductive vias disposed in the second circuit layer, wherein the plurality of conductive vias are electrically connected to the plurality of first conductive blind vias respectively.

根據本發明的一實施例,所述第二線路層包含石墨烯與銅其中至少一種。According to an embodiment of the present invention, the second circuit layer includes at least one of graphene and copper.

根據本發明的一實施例,上述電路板還包含第三矽橡膠材料,其設置在所述第二屏蔽層中,且在所述多個第二矽橡膠材料之間。According to an embodiment of the present invention, the circuit board further includes a third silicone rubber material disposed in the second shielding layer and between the plurality of second silicone rubber materials.

應用本發明的電路板及其製造方法,利用矽橡膠材料做為電磁輻射的屏蔽材料,並結合低頻屏蔽層及高頻屏蔽層,以更有效地在訊號導出的路線中屏蔽電磁輻射。By applying the circuit board and the manufacturing method thereof of the present invention, silicone rubber material is used as electromagnetic radiation shielding material, and a low-frequency shielding layer and a high-frequency shielding layer are combined to more effectively shield electromagnetic radiation in the signal output path.

本發明提供許多不同實施例或例示,以實施發明的不同特徵。以下敘述之組件和配置方式的特定例示是為了簡化本發明。這些當然僅是做為例示,其目的不在構成限制。舉例而言,第一特徵形成在第二特徵之上或上方的描述包含第一特徵和第二特徵有直接接觸的實施例,也包含有其他特徵形成在第一特徵和第二特徵之間,以致第一特徵和第二特徵沒有直接接觸的實施例。除此之外,本發明在各種具體例中重覆元件符號及/或字母。此重覆的目的是為了使說明簡化且清晰,並不表示各種討論的實施例及/或配置之間有關係。The present invention provides many different embodiments or examples to implement different features of the invention. The specific examples of components and configurations described below are intended to simplify the present invention. These are of course only examples and are not intended to be limiting. For example, a description of a first feature formed on or above a second feature includes embodiments in which the first feature and the second feature are in direct contact, and also includes embodiments in which other features are formed between the first feature and the second feature, so that the first feature and the second feature are not in direct contact. In addition, the present invention repeats component symbols and/or letters in various specific examples. The purpose of this repetition is to simplify and clarify the description and does not indicate a relationship between the various discussed embodiments and/or configurations.

再者,空間相對性用語,例如「下方(beneath)」、「在…之下(below)」、「低於(lower)」、「在…之上(above)」、「高於(upper)」等,是為了易於描述圖式中所繪示的零件或特徵和其他零件或特徵的關係。空間相對性用語除了圖式中所描繪的方向外,還包含元件在使用或操作時的不同方向。裝置可以其他方式定向(旋轉90度或在其他方向),而本發明所用的空間相對性描述也可以如此解讀。Furthermore, spatially relative terms, such as "beneath," "below," "lower," "above," "upper," etc., are used to facilitate description of the relationship of a part or feature to other parts or features depicted in the drawings. Spatially relative terms include different orientations of the component when in use or operation in addition to the orientation depicted in the drawings. The device can be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used in the present invention can be interpreted in this manner.

如本發明所使用的「大約(around)」、「約(about)」、「近乎 (approximately)」或「實質上(substantially)」一般係代表在所述之數值或範圍的百分之20以內、或百分之10以內、或百分之5以內。As used in the present invention, "around", "about", "approximately" or "substantially" generally means within 20%, within 10%, or within 5% of the stated value or range.

習知屏蔽電磁輻射的常用方法是在電路板外側利用屏蔽導電材料進行封閉,而屏蔽導電材料多為金屬,但其缺點是價格高昂,且不易加工成型。因此,本發明提供一種電路板及其製造方法,利用矽橡膠材料做為電磁輻射的屏蔽材料,並結合低頻屏蔽層及高頻屏蔽層,以更有效地在訊號導出的路線中屏蔽電磁輻射。It is known that a common method for shielding electromagnetic radiation is to use shielding conductive materials to seal the outside of a circuit board. Shielding conductive materials are mostly metals, but they are expensive and difficult to process. Therefore, the present invention provides a circuit board and a manufacturing method thereof, which uses silicone rubber material as an electromagnetic radiation shielding material and combines a low-frequency shielding layer and a high-frequency shielding layer to more effectively shield electromagnetic radiation in the signal output path.

圖1A至圖1M繪示根據本發明一些實施例的電路板100的製造過程的中間階段的剖面視圖。首先,請參閱圖1A,提供絕緣基板110,並形成凹槽R1在絕緣基板110中。接著,請參閱圖1B,放置電子元件120在凹槽R1中,並形成第一線路層125在電子元件120上。在一些實施例中,形成黏接層115在凹槽R1的底部上,且電子元件120放置在黏接層115上。1A to 1M are cross-sectional views of intermediate stages of the manufacturing process of a circuit board 100 according to some embodiments of the present invention. First, referring to FIG. 1A , an insulating substrate 110 is provided, and a groove R1 is formed in the insulating substrate 110. Next, referring to FIG. 1B , an electronic component 120 is placed in the groove R1, and a first circuit layer 125 is formed on the electronic component 120. In some embodiments, an adhesive layer 115 is formed on the bottom of the groove R1, and the electronic component 120 is placed on the adhesive layer 115.

請參閱圖1C,形成第一屏蔽層130在絕緣基板110及電子元件120上。換言之,第一屏蔽層130會與電子元件120重疊。在一些實施例中,第一屏蔽層130包含第一介質層135、第一低頻屏蔽層140及第一高頻屏蔽層145。因此,形成第一屏蔽層130的步驟包含形成第一介質層135在絕緣基板110及電子元件120上,再形成第一低頻屏蔽層140在第一介質層135上,然後形成第一高頻屏蔽層145在第一低頻屏蔽層140上。應注意的是,第一介質層135更部分地形成在凹槽R1(參照圖1B)中,且在黏接層115上。Referring to FIG. 1C , the first shielding layer 130 is formed on the insulating substrate 110 and the electronic element 120. In other words, the first shielding layer 130 overlaps with the electronic element 120. In some embodiments, the first shielding layer 130 includes a first dielectric layer 135, a first low-frequency shielding layer 140, and a first high-frequency shielding layer 145. Therefore, the step of forming the first shielding layer 130 includes forming the first dielectric layer 135 on the insulating substrate 110 and the electronic element 120, then forming the first low-frequency shielding layer 140 on the first dielectric layer 135, and then forming the first high-frequency shielding layer 145 on the first low-frequency shielding layer 140. It should be noted that the first dielectric layer 135 is further partially formed in the groove R1 (see FIG. 1B ) and on the adhesive layer 115 .

在一些實施例中,第一介質層135包含絕緣線路及遮罩層,以保護第一線路層125。在一些實施例中,第一低頻屏蔽層140包含碳纖維複合材料,以屏蔽低頻段的電磁輻射。在一些實施例中,第一高頻屏蔽層145包含合金網柵,其可為鎳、鉻、銅、銀、金及前述金屬材料的任意組合,以屏蔽高頻段的電磁輻射。在一些實施例,第一高頻屏蔽層145可利用化學鍍、物理氣相沉積(physical vapor deposition,PVD)(例如蒸鍍或濺鍍)、化學氣相沉積(chemical vapor deposition,CVD)或電鍍的方法形成。In some embodiments, the first dielectric layer 135 includes an insulating line and a mask layer to protect the first line layer 125. In some embodiments, the first low-frequency shielding layer 140 includes a carbon fiber composite material to shield electromagnetic radiation in the low frequency band. In some embodiments, the first high-frequency shielding layer 145 includes an alloy grid, which can be nickel, chromium, copper, silver, gold, and any combination of the foregoing metal materials to shield electromagnetic radiation in the high frequency band. In some embodiments, the first high-frequency shielding layer 145 can be formed by chemical plating, physical vapor deposition (PVD) (such as evaporation or sputtering), chemical vapor deposition (CVD) or electroplating.

請參閱圖1D,形成第一開口O1在第一屏蔽層130中。在一些實施例中,第一開口O1穿過第一高頻屏蔽層145及第一介質層135,以暴露出第一線路層125。接著,請參閱圖1E,填充第一矽橡膠材料150在第一開口O1(參照圖1D)內。在一些實施例中,第一矽橡膠材料150的底部接觸第一線路層125,且第一矽橡膠材料150的頂部與第一高頻屏蔽層145之頂表面145T齊平。第一矽橡膠材料150主要是用來屏蔽電磁波,相較於習知的屏蔽導電材料(即金屬),第一矽橡膠材料150包含的矽橡膠複合材料不僅可有效地抑制電磁輻射,並防止外部電磁輻射對電路板的干擾,更可降低材料成本。Referring to FIG. 1D , a first opening O1 is formed in the first shielding layer 130 . In some embodiments, the first opening O1 passes through the first high-frequency shielding layer 145 and the first dielectric layer 135 to expose the first circuit layer 125 . Next, referring to FIG. 1E , the first silicone rubber material 150 is filled in the first opening O1 (refer to FIG. 1D ). In some embodiments, the bottom of the first silicone rubber material 150 contacts the first circuit layer 125 , and the top of the first silicone rubber material 150 is flush with the top surface 145T of the first high-frequency shielding layer 145 . The first silicone rubber material 150 is mainly used to shield electromagnetic waves. Compared with the conventional shielding conductive material (ie, metal), the silicone rubber composite material included in the first silicone rubber material 150 can not only effectively suppress electromagnetic radiation and prevent external electromagnetic radiation from interfering with the circuit board, but also reduce material costs.

請參閱圖1F,在第一矽橡膠材料150中鑽孔,以形成開口(圖未繪示)。須注意的是,前述開口的寬度小於第一開口O1。然後,填充導電材料至前述開口中,以形成第一導電盲孔155在第一矽橡膠材料150中,並電性連接第一線路層125。在一些實施例中,第一導電盲孔155可利用電鍍與化學鍍的方法來填充導電材料而形成。在一具體例中,第一導電盲孔155包含銅。Referring to FIG. 1F , a hole is drilled in the first silicone rubber material 150 to form an opening (not shown). It should be noted that the width of the aforementioned opening is smaller than the first opening O1. Then, a conductive material is filled into the aforementioned opening to form a first conductive blind via 155 in the first silicone rubber material 150 and electrically connected to the first circuit layer 125. In some embodiments, the first conductive blind via 155 can be formed by filling the conductive material using electroplating and chemical plating methods. In a specific example, the first conductive blind via 155 includes copper.

請參閱圖1G,形成複合層165在第一屏蔽層130及第一矽橡膠材料150上。在一些實施例中,複合層165包含絕緣層160、石墨烯層161及金屬層163。因此,形成複合層165的步驟包含形成絕緣層160在第一屏蔽層130及第一矽橡膠材料150上,再形成石墨烯層161在絕緣層160上,然後形成金屬層163在石墨烯層161上。在一具體例中,金屬層163包含銅。1G , a composite layer 165 is formed on the first shielding layer 130 and the first silicone rubber material 150. In some embodiments, the composite layer 165 includes an insulating layer 160, a graphene layer 161, and a metal layer 163. Therefore, the step of forming the composite layer 165 includes forming the insulating layer 160 on the first shielding layer 130 and the first silicone rubber material 150, then forming the graphene layer 161 on the insulating layer 160, and then forming the metal layer 163 on the graphene layer 161. In a specific example, the metal layer 163 includes copper.

圖1H至圖1M是以製作具有低頻訊號線路的電路板100為例進行說明。請參閱圖1H,圖案化複合層165(參照圖1G),以形成第二線路層170。首先,對金屬層163(參照圖1G)進行曝光顯影,以形成金屬線路層168在石墨烯層161(參照圖1G)上。接著,利用氧氣電漿蝕刻石墨烯層161,以形成石墨烯線路層166在絕緣層160上。在一些實施例中,如圖1H所示,第二線路層170包含金屬線路層168及石墨烯線路層166。1H to 1M are used as an example to illustrate the production of a circuit board 100 having a low-frequency signal line. Referring to FIG. 1H , the composite layer 165 (refer to FIG. 1G ) is patterned to form a second circuit layer 170. First, the metal layer 163 (refer to FIG. 1G ) is exposed and developed to form a metal circuit layer 168 on the graphene layer 161 (refer to FIG. 1G ). Then, the graphene layer 161 is etched by oxygen plasma to form a graphene circuit layer 166 on the insulating layer 160. In some embodiments, as shown in FIG. 1H , the second circuit layer 170 includes a metal circuit layer 168 and a graphene circuit layer 166.

請參閱圖1I,可對第二線路層170及絕緣層160進行鑽孔,以形成開口(圖未繪示)自第二線路層170延伸至絕緣層160,其中此開口可局部暴露出第一導電盲孔155的一端。接著,填充導電材料至此開口中,以形成導電孔175穿過第二線路層170及絕緣層160,而與第一導電盲孔155電性連接。在一些實施例中,導電孔175可利用電鍍與化學鍍的方法來填充導電材料而形成。在一具體例中,導電孔175包含銅。Referring to FIG. 1I , the second circuit layer 170 and the insulating layer 160 may be drilled to form an opening (not shown) extending from the second circuit layer 170 to the insulating layer 160, wherein the opening may partially expose one end of the first conductive blind via 155. Then, a conductive material is filled into the opening to form a conductive via 175 passing through the second circuit layer 170 and the insulating layer 160, and electrically connected to the first conductive blind via 155. In some embodiments, the conductive via 175 may be formed by filling the conductive material using electroplating and chemical plating methods. In a specific example, the conductive via 175 includes copper.

請參閱圖1J,形成第二屏蔽層180在第二線路層170上。在一些實施例中,第二屏蔽層180包含第二介質層182、第二低頻屏蔽層184、第二高頻屏蔽層186及第三介質層188。因此,形成第二屏蔽層180的步驟包含先形成第二介質層182在第二線路層170及絕緣層160上,接著形成第二低頻屏蔽層184在第二介質層182上,形成第二高頻屏蔽層186在第二低頻屏蔽層184上,然後形成第三介質層188在第二高頻屏蔽層186上。1J , a second shielding layer 180 is formed on the second circuit layer 170. In some embodiments, the second shielding layer 180 includes a second dielectric layer 182, a second low-frequency shielding layer 184, a second high-frequency shielding layer 186, and a third dielectric layer 188. Therefore, the step of forming the second shielding layer 180 includes first forming the second dielectric layer 182 on the second circuit layer 170 and the insulating layer 160, then forming the second low-frequency shielding layer 184 on the second dielectric layer 182, forming the second high-frequency shielding layer 186 on the second low-frequency shielding layer 184, and then forming the third dielectric layer 188 on the second high-frequency shielding layer 186.

在一些實施例中,第二介質層182包含絕緣線路及遮罩層,以保護第一線路層125。在一些實施例中,第二低頻屏蔽層184包含碳纖維複合材料,以屏蔽低頻段的電磁輻射。在一些實施例中,第二高頻屏蔽層186包含合金網柵,其可為鎳、鉻、銅、銀、金及前述金屬材料的任意組合,以屏蔽高頻段的電磁輻射。在一些實施例,第二高頻屏蔽層186可利用化學鍍、物理氣相沉積(physical vapor deposition,PVD)(例如蒸鍍或濺鍍)、化學氣相沉積(chemical vapor deposition,CVD)或電鍍的方法形成。第三介質層188是用於保護第二高頻屏蔽層186及第二低頻屏蔽層184。In some embodiments, the second dielectric layer 182 includes an insulating circuit and a mask layer to protect the first circuit layer 125. In some embodiments, the second low-frequency shielding layer 184 includes a carbon fiber composite material to shield electromagnetic radiation in the low frequency band. In some embodiments, the second high-frequency shielding layer 186 includes an alloy grid, which can be nickel, chromium, copper, silver, gold, and any combination of the aforementioned metal materials to shield electromagnetic radiation in the high frequency band. In some embodiments, the second high-frequency shielding layer 186 can be formed by chemical plating, physical vapor deposition (PVD) (such as evaporation or sputtering), chemical vapor deposition (CVD) or electroplating. The third dielectric layer 188 is used to protect the second high frequency shielding layer 186 and the second low frequency shielding layer 184.

請參閱圖1K,在第二屏蔽層180中形成第二開口O2,以暴露出第二線路層170的金屬線路層168。在一些實施例中,第二開口O2自第三介質層188延伸至部分的第二介質層182中。在一些實施例中,可選擇性地形成第三開口O3,以暴露出絕緣層160。在一些實施例中,第三開口O3是介於至少兩個第二開口O2之間。在一些實施例中,第三開口O3自第三介質層188延伸至絕緣層160的頂部,並暴露出第二線路層170的側壁。因此,第三開口O3的深度大於第二開口O2的深度。Referring to FIG. 1K , a second opening O2 is formed in the second shielding layer 180 to expose the metal wiring layer 168 of the second wiring layer 170. In some embodiments, the second opening O2 extends from the third dielectric layer 188 to a portion of the second dielectric layer 182. In some embodiments, a third opening O3 may be selectively formed to expose the insulating layer 160. In some embodiments, the third opening O3 is between at least two second openings O2. In some embodiments, the third opening O3 extends from the third dielectric layer 188 to the top of the insulating layer 160 and exposes the sidewall of the second wiring layer 170. Therefore, the depth of the third opening O3 is greater than the depth of the second opening O2.

請參閱圖1L,填充第二矽橡膠材料190在第二開口O2(參照圖1K)內。在一些實施例中,第二矽橡膠材料190的底部接觸第二線路層170(或金屬線路層168),且第二矽橡膠材料190的頂部與第三介質層188的頂表面188T齊平。在上述形成第三開口O3(參照圖1K)的一些實施例中,可填充第三矽橡膠材料192在第三開口O3內。在此實施例中,第三矽橡膠材料192的底部接觸絕緣層160,且第三矽橡膠材料192的頂部與第三介質層188的頂表面188T齊平。在一些實施例中,第一矽橡膠材料150、第二矽橡膠材料190及第三矽橡膠材料192包含相同的矽橡膠複合材料。因此,第二矽橡膠材料190及第三矽橡膠材料192也是用來屏蔽電磁波。Referring to FIG. 1L , the second silicone rubber material 190 is filled in the second opening O2 (see FIG. 1K ). In some embodiments, the bottom of the second silicone rubber material 190 contacts the second circuit layer 170 (or the metal circuit layer 168 ), and the top of the second silicone rubber material 190 is flush with the top surface 188T of the third dielectric layer 188 . In some embodiments in which the third opening O3 (see FIG. 1K ) is formed, the third silicone rubber material 192 may be filled in the third opening O3 . In this embodiment, the bottom of the third silicone rubber material 192 contacts the insulating layer 160, and the top of the third silicone rubber material 192 is flush with the top surface 188T of the third dielectric layer 188. In some embodiments, the first silicone rubber material 150, the second silicone rubber material 190, and the third silicone rubber material 192 include the same silicone rubber composite material. Therefore, the second silicone rubber material 190 and the third silicone rubber material 192 are also used to shield electromagnetic waves.

請參閱圖1M,形成第二導電盲孔195在第二矽橡膠材料190中,以電性連接第二線路層170(或金屬線路層168)。在一些實施例中,可形成襯墊195A在第二導電盲孔195的頂部。在一些實施例中,形成第二導電盲孔195包含先形成開口(圖未繪示)在第二矽橡膠材料190中,然後填充(例如電鍍)導電材料至前述開口中而形成。須注意的是,不形成導電盲孔在第三矽橡膠材料192中。如圖1M所示,根據上述步驟所製得的電路板100主要是利用金屬線路層168來傳輸低頻訊號。Referring to FIG. 1M , a second conductive blind via 195 is formed in the second silicone rubber material 190 to electrically connect the second circuit layer 170 (or metal circuit layer 168). In some embodiments, a pad 195A may be formed on the top of the second conductive blind via 195. In some embodiments, forming the second conductive blind via 195 includes first forming an opening (not shown) in the second silicone rubber material 190, and then filling (e.g., electroplating) a conductive material into the aforementioned opening. It should be noted that no conductive blind via is formed in the third silicone rubber material 192. As shown in FIG. 1M , the circuit board 100 manufactured according to the above steps mainly uses the metal circuit layer 168 to transmit low-frequency signals.

請參閱圖2A至圖2C,其繪示根據本發明一些實施例的電路板200的製造過程的中間階段的剖面視圖。圖2A至圖2C為製作具有高頻訊號線路的電路板200。以下電路板200的製造過程可由圖1G的結構開始說明。請參閱圖2A,移除整個金屬層163。換言之,也可使圖1G中的複合層165中不包含金屬層163,則可省略移除金屬層163的步驟。因此,圖2A所示的結構包含絕緣基板110、在絕緣基板110上的電子元件120、在電子元件120上的第一線路層125、在絕緣基板110及電子元件120上的第一屏蔽層130、在第一屏蔽層130中的第一矽橡膠材料150、在第一矽橡膠材料150中的第一導電盲孔155、在第一屏蔽層130上的絕緣層160以及在絕緣層160上的石墨烯層161。Please refer to Figures 2A to 2C, which are cross-sectional views of intermediate stages of the manufacturing process of the circuit board 200 according to some embodiments of the present invention. Figures 2A to 2C are for manufacturing a circuit board 200 having a high-frequency signal line. The manufacturing process of the circuit board 200 below can be described starting from the structure of Figure 1G. Please refer to Figure 2A, and the entire metal layer 163 is removed. In other words, the composite layer 165 in Figure 1G may not include the metal layer 163, and the step of removing the metal layer 163 may be omitted. Therefore, the structure shown in Figure 2A includes an insulating substrate 110, an electronic component 120 on the insulating substrate 110, a first circuit layer 125 on the electronic component 120, a first shielding layer 130 on the insulating substrate 110 and the electronic component 120, a first silicone rubber material 150 in the first shielding layer 130, a first conductive blind via 155 in the first silicone rubber material 150, an insulating layer 160 on the first shielding layer 130, and a graphene layer 161 on the insulating layer 160.

請參閱圖2B,圖案化石墨烯層161(參照圖2A),以形成第二線路層270。在一些實施例中,利用氧氣電漿蝕刻石墨烯層161,以形成第二線路層(或石墨烯線路層)270在絕緣層160上。2B , the graphene layer 161 (see FIG. 2A ) is patterned to form a second circuit layer 270 . In some embodiments, the graphene layer 161 is etched by oxygen plasma to form the second circuit layer (or graphene circuit layer) 270 on the insulating layer 160 .

接著,請參閱圖2C,對圖2B的結構進行與圖1I至圖1L相似的步驟,即形成導電孔175穿過第二線路層270及絕緣層160;形成第二屏蔽層180在第二線路層270上;形成第二矽橡膠材料190及第三矽橡膠材料192。然後,形成第二導電盲孔195在第二矽橡膠材料190中,以電性連接第二線路層(或石墨烯線路層)270,即製得如圖2C所示的電路板200。根據上述步驟所製得的電路板200主要是利用石墨烯線路層(即第二線路層270)來傳輸高頻訊號。Next, please refer to FIG. 2C , and the structure of FIG. 2B is subjected to steps similar to those of FIG. 1I to FIG. 1L , i.e., forming a conductive hole 175 through the second circuit layer 270 and the insulating layer 160; forming a second shielding layer 180 on the second circuit layer 270; and forming a second silicone rubber material 190 and a third silicone rubber material 192. Then, a second conductive blind hole 195 is formed in the second silicone rubber material 190 to electrically connect the second circuit layer (or graphene circuit layer) 270, and a circuit board 200 as shown in FIG. 2C is obtained. The circuit board 200 obtained according to the above steps mainly uses the graphene circuit layer (i.e., the second circuit layer 270) to transmit high-frequency signals.

請參閱圖3A至圖3C,其繪示根據本發明一些實施例的電路板300的製造過程的中間階段的剖面視圖。圖3A至圖3C為製作具有高頻訊號線路及低頻訊號線路的電路板300。以下電路板300的製造過程可由圖1G的結構開始說明。請參閱圖3A,進行曝光顯影來圖案化金屬層163(參照圖1G),以形成金屬線路層368。須注意的是,金屬線路層368與金屬線路層168的圖案不同,金屬線路層368僅在部分第一線路層125上方,不位在其他部分第一線路層125上方。Please refer to Figures 3A to 3C, which are cross-sectional views of intermediate stages of the manufacturing process of the circuit board 300 according to some embodiments of the present invention. Figures 3A to 3C are for manufacturing a circuit board 300 having a high-frequency signal line and a low-frequency signal line. The manufacturing process of the circuit board 300 can be described below starting from the structure of Figure 1G. Please refer to Figure 3A, and the metal layer 163 (refer to Figure 1G) is patterned by exposure and development to form a metal wiring layer 368. It should be noted that the pattern of the metal wiring layer 368 is different from that of the metal wiring layer 168, and the metal wiring layer 368 is only above a portion of the first wiring layer 125, and is not located above other portions of the first wiring layer 125.

圖3A所示的結構包含絕緣基板110、在絕緣基板110上的電子元件120、在電子元件120上的第一線路層125、在絕緣基板110及電子元件120上的第一屏蔽層130、在第一屏蔽層130中的第一矽橡膠材料150、在第一矽橡膠材料150中的第一導電盲孔155、在第一屏蔽層130上的絕緣層160、在絕緣層160上的石墨烯層161及在石墨烯層161上的金屬線路層368。The structure shown in FIG. 3A includes an insulating substrate 110, an electronic component 120 on the insulating substrate 110, a first circuit layer 125 on the electronic component 120, a first shielding layer 130 on the insulating substrate 110 and the electronic component 120, a first silicone rubber material 150 in the first shielding layer 130, a first conductive blind via 155 in the first silicone rubber material 150, an insulating layer 160 on the first shielding layer 130, a graphene layer 161 on the insulating layer 160, and a metal circuit layer 368 on the graphene layer 161.

請參閱圖3B,圖案化石墨烯層161(參照圖3A),以形成石墨烯線路層366。在一些實施例中,利用氧氣電漿蝕刻石墨烯層161,以形成石墨烯線路層366。在一些實施例中,如圖3B所示,第二線路層370包含金屬線路層368及石墨烯線路層366。相較於第二線路層170的石墨烯線路層166完全被金屬線路層168覆蓋,圖3B所示的第二線路層370中的部分石墨烯線路層366並未被金屬線路層368覆蓋。Referring to FIG. 3B , the graphene layer 161 (refer to FIG. 3A ) is patterned to form a graphene wiring layer 366. In some embodiments, the graphene layer 161 is etched by oxygen plasma to form the graphene wiring layer 366. In some embodiments, as shown in FIG. 3B , the second wiring layer 370 includes a metal wiring layer 368 and a graphene wiring layer 366. Compared to the graphene wiring layer 166 of the second wiring layer 170 being completely covered by the metal wiring layer 168, a portion of the graphene wiring layer 366 in the second wiring layer 370 shown in FIG. 3B is not covered by the metal wiring layer 368.

接著,請參閱圖3C,對圖3B的結構進行與圖1I至圖1L相似的步驟,即形成導電孔175穿過第二線路層370及絕緣層160;形成第二屏蔽層180在第二線路層370上;形成第二矽橡膠材料190及第三矽橡膠材料192。然後,形成第二導電盲孔195在第二矽橡膠材料190中,以電性連接第二線路層370,即製得如圖3C所示的電路板300。根據上述步驟所製得的電路板300主要可分別利用石墨烯線路層366傳輸高頻訊號及利用金屬線路層368傳輸低頻訊號。Next, please refer to FIG. 3C , and the structure of FIG. 3B is subjected to steps similar to those of FIG. 1I to FIG. 1L , that is, a conductive hole 175 is formed to pass through the second circuit layer 370 and the insulating layer 160; a second shielding layer 180 is formed on the second circuit layer 370; and a second silicone rubber material 190 and a third silicone rubber material 192 are formed. Then, a second conductive blind hole 195 is formed in the second silicone rubber material 190 to electrically connect the second circuit layer 370, and a circuit board 300 as shown in FIG. 3C is obtained. The circuit board 300 obtained according to the above steps can mainly use the graphene circuit layer 366 to transmit high-frequency signals and the metal circuit layer 368 to transmit low-frequency signals.

如上所述,本發明提供一種電路板及其製造方法,其利用矽橡膠材料做為電磁輻射的屏蔽材料,將矽橡膠材料設置在導電盲孔周圍,並結合低頻屏蔽層及高頻屏蔽層,以屏蔽各線路訊號產生的電磁輻射。As described above, the present invention provides a circuit board and a manufacturing method thereof, which utilizes silicone rubber material as electromagnetic radiation shielding material, arranges the silicone rubber material around the conductive blind hole, and combines a low-frequency shielding layer and a high-frequency shielding layer to shield the electromagnetic radiation generated by each line signal.

雖然本發明已以數個實施例揭露如上,然其並非用以限定本發明,在本發明所屬技術領域中任何具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed as above with several embodiments, they are not intended to limit the present invention. Anyone with ordinary knowledge in the technical field to which the present invention belongs can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be defined by the scope of the attached patent application.

100:電路板 110:絕緣基板 115:黏接層 120:電子元件 125:第一線路層 130:第一屏蔽層 135:第一介質層 140:第一低頻屏蔽層 145:第一高頻屏蔽層 145T:頂表面 150:第一矽橡膠材料 155:第一導電盲孔 160:絕緣層 161:石墨烯層 163:金屬層 165:複合層 166:石墨烯線路層 168:金屬線路層 170:第二線路層 175:導電孔 180:第二屏蔽層 182:第二介質層 184:第二低頻屏蔽層 186:第二高頻屏蔽層 188:第三介質層 188T:頂表面 190:第二矽橡膠材料 192:第三矽橡膠材料 195:第二導電盲孔 195A:襯墊 200:電路板 270:第二線路層 300:電路板 366:石墨烯線路層 368:金屬線路層 370:第二線路層 O1:第一開口 O2:第二開口 O3:第三開口 R1:凹槽 100: Circuit board 110: Insulating substrate 115: Adhesive layer 120: Electronic component 125: First circuit layer 130: First shielding layer 135: First dielectric layer 140: First low-frequency shielding layer 145: First high-frequency shielding layer 145T: Top surface 150: First silicone rubber material 155: First conductive blind hole 160: Insulating layer 161: Graphene layer 163: Metal layer 165: Composite layer 166: Graphene circuit layer 168: Metal circuit layer 170: Second circuit layer 175: Conductive hole 180: Second shielding layer 182: Second dielectric layer 184: Second low-frequency shielding layer 186: Second high-frequency shielding layer 188: Third dielectric layer 188T: Top surface 190: Second silicone rubber material 192: Third silicone rubber material 195: Second conductive blind hole 195A: Pad 200: Circuit board 270: Second circuit layer 300: Circuit board 366: Graphene circuit layer 368: Metal circuit layer 370: Second circuit layer O1: First opening O2: Second opening O3: Third opening R1: Groove

根據以下詳細說明並配合附圖閱讀,使本發明的態樣獲致較佳的理解。需注意的是,如同業界的標準作法,許多特徵並不是按照比例繪示的。事實上,為了進行清楚討論,許多特徵的尺寸可以經過任意縮放。 [圖1A]至[圖1M]繪示根據本發明一些實施例電路板的製造過程的中間階段的剖面視圖。 [圖2A]至[圖2C]繪示根據本發明另一些實施例電路板的製造過程的中間階段的剖面視圖。 [圖3A]至[圖3C]繪示根據本發明另一些實施例電路板的製造過程的中間階段的剖面視圖。 The present invention is best understood by reading the following detailed description in conjunction with the accompanying drawings. It should be noted that, as is standard practice in the industry, many features are not drawn to scale. In fact, for the sake of clarity of discussion, the sizes of many features may be arbitrarily scaled. [Figures 1A] to 1M] illustrate cross-sectional views of intermediate stages of the manufacturing process of circuit boards according to some embodiments of the present invention. [Figures 2A] to 2C] illustrate cross-sectional views of intermediate stages of the manufacturing process of circuit boards according to other embodiments of the present invention. [Figures 3A] to 3C] illustrate cross-sectional views of intermediate stages of the manufacturing process of circuit boards according to other embodiments of the present invention.

國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic storage information (please note in the order of storage institution, date, and number) None Foreign storage information (please note in the order of storage country, institution, date, and number) None

100:電路板 100: Circuit board

110:絕緣基板 110: Insulating substrate

120:電子元件 120: Electronic components

125:第一線路層 125: First circuit layer

135:第一介質層 135: First dielectric layer

140:第一低頻屏蔽層 140: First low-frequency shielding layer

145:第一高頻屏蔽層 145: The first high-frequency shielding layer

150:第一矽橡膠材料 150: The first silicone rubber material

155:第一導電盲孔 155: First conductive blind hole

160:絕緣層 160: Insulation layer

166:石墨烯線路層 166: Graphene circuit layer

168:金屬線路層 168: Metal circuit layer

170:第二線路層 170: Second circuit layer

180:第二屏蔽層 180: Second shielding layer

182:第二介質層 182: Second dielectric layer

184:第二低頻屏蔽層 184: Second low-frequency shielding layer

186:第二高頻屏蔽層 186: Second high frequency shielding layer

188:第三介質層 188: The third medium layer

190:第二矽橡膠材料 190: Second silicone rubber material

192:第三矽橡膠材料 192: The third silicone rubber material

195:第二導電盲孔 195: Second conductive blind hole

195A:襯墊 195A: Pad

Claims (14)

一種電路板的製造方法,包含: 形成一凹槽在一絕緣基板中; 放置一電子元件於所述凹槽中,其中所述電子元件包含一第一線路層; 形成一第一屏蔽層在所述絕緣基板及所述電子元件上,其中所述第一屏蔽層包含一第一低頻屏蔽層及一第一高頻屏蔽層; 形成多個第一開口在所述第一屏蔽層中,以暴露出所述第一線路層; 填充多個第一矽橡膠材料在所述多個第一開口內; 形成多個第一導電盲孔在所述多個第一矽橡膠材料中,其中所述多個第一導電盲孔電性連接所述第一線路層; 形成一複合層在所述第一屏蔽層及所述多個第一矽橡膠材料上,其中所述複合層包含一石墨烯層及一金屬層; 圖案化所述複合層,以形成一第二線路層; 形成一第二屏蔽層在所述第二線路層上,其中所述第二屏蔽層包含一第二低頻屏蔽層及一第二高頻屏蔽層; 形成多個第二開口在所述第二屏蔽層上,以暴露出所述第二線路層; 填充多個第二矽橡膠材料在所述多個第二開口內;以及 形成多個第二導電盲孔在所述多個第二矽橡膠材料中。 A method for manufacturing a circuit board, comprising: forming a groove in an insulating substrate; placing an electronic component in the groove, wherein the electronic component includes a first circuit layer; forming a first shielding layer on the insulating substrate and the electronic component, wherein the first shielding layer includes a first low-frequency shielding layer and a first high-frequency shielding layer; forming a plurality of first openings in the first shielding layer to expose the first circuit layer; filling a plurality of first silicone rubber materials in the plurality of first openings; forming a plurality of first conductive blind holes in the plurality of first silicone rubber materials, wherein the plurality of first conductive blind holes are electrically connected to the first circuit layer; Forming a composite layer on the first shielding layer and the plurality of first silicone rubber materials, wherein the composite layer includes a graphene layer and a metal layer; Patterning the composite layer to form a second circuit layer; Forming a second shielding layer on the second circuit layer, wherein the second shielding layer includes a second low-frequency shielding layer and a second high-frequency shielding layer; Forming a plurality of second openings on the second shielding layer to expose the second circuit layer; Filling a plurality of second silicone rubber materials in the plurality of second openings; and Forming a plurality of second conductive blind vias in the plurality of second silicone rubber materials. 如請求項1所述的電路板的製造方法,其中在形成所述第二屏蔽層之前,更包含: 形成多個導電孔在所述第二線路層中,其中所述多個導電孔分別電性連接所述多個第一導電盲孔。 The method for manufacturing a circuit board as described in claim 1, wherein before forming the second shielding layer, it further comprises: Forming a plurality of conductive holes in the second circuit layer, wherein the plurality of conductive holes are electrically connected to the plurality of first conductive blind holes respectively. 如請求項1所述的電路板的製造方法,其中形成所述複合層的步驟包含: 形成一絕緣層在所述第一屏蔽層及所述多個第一矽橡膠材料上; 形成所述石墨烯層在所述絕緣層上;以及 形成所述金屬層在所述石墨烯層上。 The method for manufacturing a circuit board as described in claim 1, wherein the step of forming the composite layer includes: forming an insulating layer on the first shielding layer and the plurality of first silicone rubber materials; forming the graphene layer on the insulating layer; and forming the metal layer on the graphene layer. 如請求項3所述的電路板的製造方法,更包含: 形成至少一第三開口在所述第二屏蔽層上並在所述多個第二開口之間,以暴露出所述絕緣層;以及 填充一第三矽橡膠材料於所述至少一第三開口內。 The method for manufacturing a circuit board as described in claim 3 further comprises: forming at least one third opening on the second shielding layer and between the plurality of second openings to expose the insulating layer; and filling a third silicone rubber material in the at least one third opening. 如請求項1所述的電路板的製造方法,其中圖案化所述複合層的步驟包含: 移除所述金屬層;以及 利用電漿圖案化所述石墨烯層。 The method for manufacturing a circuit board as described in claim 1, wherein the step of patterning the composite layer comprises: removing the metal layer; and patterning the graphene layer using plasma. 如請求項1所述的電路板的製造方法,其中在放置所述電子元件於所述凹槽中之前,更包含: 形成一黏接層在所述凹槽的一底部;以及 放置所述電子元件於所述黏接層上。 The method for manufacturing a circuit board as described in claim 1, wherein before placing the electronic component in the groove, it further comprises: forming an adhesive layer at a bottom of the groove; and placing the electronic component on the adhesive layer. 如請求項1所述的電路板的製造方法,其中形成所述第一屏蔽層的步驟包含: 形成一第一介質層在所述絕緣基板及所述電子元件上; 形成所述第一低頻屏蔽層在所述第一介質層上;以及 形成所述第一高頻屏蔽層在所述第一低頻屏蔽層上。 The method for manufacturing a circuit board as described in claim 1, wherein the step of forming the first shielding layer comprises: forming a first dielectric layer on the insulating substrate and the electronic component; forming the first low-frequency shielding layer on the first dielectric layer; and forming the first high-frequency shielding layer on the first low-frequency shielding layer. 如請求項1所述的電路板的製造方法,其中形成所述第二屏蔽層的步驟包含: 形成一第二介質層在所述第二線路層上; 形成所述第二低頻屏蔽層在所述第二介質層上; 形成所述第二高頻屏蔽層在所述第二低頻屏蔽層上;以及 形成一第三介質層在所述第二高頻屏蔽層上。 The method for manufacturing a circuit board as described in claim 1, wherein the step of forming the second shielding layer comprises: forming a second dielectric layer on the second circuit layer; forming the second low-frequency shielding layer on the second dielectric layer; forming the second high-frequency shielding layer on the second low-frequency shielding layer; and forming a third dielectric layer on the second high-frequency shielding layer. 一種電路板,包含: 一絕緣基板,具有一凹槽; 一電子元件,設置在所述凹槽中; 一第一線路層,設置在所述電子元件之一頂表面上; 一第一屏蔽層,設置在所述絕緣基板及所述電子元件上,其中所述第一屏蔽層與所述電子元件重疊; 多個第一矽橡膠材料,設置在所述第一屏蔽層中; 多個第一導電盲孔,設置在所述多個第一矽橡膠材料中,以電性連接所述第一線路層; 一第二線路層,設置在所述第一屏蔽層上; 一第二屏蔽層,設置在所述第二線路層上; 多個第二矽橡膠材料,設置在所述第二屏蔽層中;以及 多個第二導電盲孔,設置在所述多個第二導電盲孔中,以電性連接所述第二線路層。 A circuit board comprises: an insulating substrate having a groove; an electronic component disposed in the groove; a first circuit layer disposed on a top surface of the electronic component; a first shielding layer disposed on the insulating substrate and the electronic component, wherein the first shielding layer overlaps the electronic component; a plurality of first silicone rubber materials disposed in the first shielding layer; a plurality of first conductive blind holes disposed in the plurality of first silicone rubber materials to electrically connect the first circuit layer; a second circuit layer disposed on the first shielding layer; a second shielding layer disposed on the second circuit layer; a plurality of second silicone rubber materials disposed in the second shielding layer; and A plurality of second conductive blind vias are arranged in the plurality of second conductive blind vias to electrically connect the second circuit layer. 如請求項9所述的電路板,其中所述第一屏蔽層包含: 一第一介質層,設置在所述絕緣基板及所述電子元件上; 一第一低頻屏蔽層,設置在所述第一介質層上;以及 一第一高頻屏蔽層,設置在所述第一低頻屏蔽層上。 A circuit board as described in claim 9, wherein the first shielding layer comprises: a first dielectric layer disposed on the insulating substrate and the electronic component; a first low-frequency shielding layer disposed on the first dielectric layer; and a first high-frequency shielding layer disposed on the first low-frequency shielding layer. 如請求項9所述的電路板,其中所述第二屏蔽層包含: 一第二介質層,設置在所述第二線路層上; 一第二低頻屏蔽層,設置在所述第二介質層上; 一第二高頻屏蔽層,設置在所述第二低頻屏蔽層上;以及 一第三介質層,設置在所述第二高頻屏蔽層上。 A circuit board as described in claim 9, wherein the second shielding layer comprises: a second dielectric layer disposed on the second circuit layer; a second low-frequency shielding layer disposed on the second dielectric layer; a second high-frequency shielding layer disposed on the second low-frequency shielding layer; and a third dielectric layer disposed on the second high-frequency shielding layer. 如請求項9所述的電路板,更包含: 多個導電孔,設置在所述第二線路層中,其中所述多個導電孔分別電性連接所述多個第一導電盲孔。 The circuit board as described in claim 9 further comprises: A plurality of conductive vias disposed in the second circuit layer, wherein the plurality of conductive vias are electrically connected to the plurality of first conductive blind vias respectively. 如請求項9所述的電路板,其中所述第二線路層包含石墨烯與銅其中至少一種。A circuit board as described in claim 9, wherein the second circuit layer includes at least one of graphene and copper. 如請求項9所述的電路板,更包含: 一第三矽橡膠材料,設置在所述第二屏蔽層中,且在所述多個第二矽橡膠材料之間。 The circuit board as described in claim 9 further comprises: A third silicone rubber material disposed in the second shielding layer and between the plurality of second silicone rubber materials.
TW111137090A 2022-09-26 2022-09-29 Circuit board and method of fabricating the same TWI849515B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001028303A1 (en) 1999-10-14 2001-04-19 Ibiden Co., Ltd. Electromagnetic shield wiring structure of wiring board
CN1488236A (en) * 2000-03-21 2004-04-07 ���Ͽع����޹�˾ Consistent form of shielding for electronic component assemblies and methods of forming and using same
CN101170873A (en) * 2006-10-27 2008-04-30 阿奇公司 Circuit board unit and manufacturing method thereof
TW202135620A (en) * 2019-11-08 2021-09-16 美商雷神公司 Method for forming channels in printed circuit boards by stacking slotted layers

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001028303A1 (en) 1999-10-14 2001-04-19 Ibiden Co., Ltd. Electromagnetic shield wiring structure of wiring board
CN1488236A (en) * 2000-03-21 2004-04-07 ���Ͽع����޹�˾ Consistent form of shielding for electronic component assemblies and methods of forming and using same
CN101170873A (en) * 2006-10-27 2008-04-30 阿奇公司 Circuit board unit and manufacturing method thereof
TW202135620A (en) * 2019-11-08 2021-09-16 美商雷神公司 Method for forming channels in printed circuit boards by stacking slotted layers

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