TWI846807B - Ultraviolet curing adhesive tape for semiconductor wafer processing, method for manufacturing semiconductor chip, and method for using the tape - Google Patents

Abstract

The present invention is a method for manufacturing a UV-curable adhesive tape for semiconductor wafer processing and a semiconductor chip, and a method for using the tape. The UV-curable adhesive tape for semiconductor wafer processing has at least a base film and a UV-curable adhesive layer disposed on the base film. The adhesive tape has a characteristic that the ratio of the adhesive force values of the adhesive tape measured by the 90° peeling test method for SUS304 based on JIS Z 0237 before and after UV irradiation using a specific light source is within a certain range.

Description

Ultraviolet curing adhesive tape for semiconductor wafer processing, method for manufacturing semiconductor chip, and method for using the tape

The present invention relates to a method for manufacturing an ultraviolet curing adhesive tape for semiconductor wafer processing and a semiconductor chip, and a method for using the tape.

In recent years, the importance of high-density mounting technology has become increasingly important in response to the requirements for further high functionality and miniaturization of mobile information terminals represented by smartphones. For example, with the popularization of IC cards or the rapid expansion of USB memory, the number of stacked chips has increased, and the chips are expected to be further thinned. Therefore, there is a demand to thin semiconductor chips that used to be around 200 μm to 350 μm thick to 50 μm to 100 μm or less. On the other hand, there is a tendency to increase the diameter of semiconductor wafers in order to increase the number of semiconductor chips that can be manufactured in one process and improve the manufacturing efficiency of chips. In addition to the thinning of semiconductor wafers, the trend of larger diameters is particularly evident in the fields of NAND or NOR flash memory, or DRAM as a volatile memory. Currently, grinding 12-inch semiconductor wafer thin films to a thickness of less than 100 μm has gradually become the standard.

For example, memory system devices improve performance by stacking semiconductor chips, so thin film grinding is very necessary. As a method to achieve thinning of chips, the following semiconductor chip manufacturing methods are known: a method of using special protective tape to perform thin film grinding in general steps; or a method called cutting first, which is to form a groove of a specific depth from the front side of the wafer and then grind from the back side of the wafer. Such methods can produce inexpensive and high-performance flash memories, etc. In addition, the demand for thin filming of wafers with bumps used for flip-chip mounting is also increasing. The wafer with bumps has large bumps on its surface, so thin film processing is difficult. If the back is ground using a general protective tape, the wafer will crack or the thickness accuracy of the wafer will deteriorate. Therefore, a special surface protection tape is used when grinding wafers with bumps (see reference 1).

However, with the development of further thinning of semiconductor wafers in recent years, the problem of increased wafer warpage after thin film grinding has arisen. If the wafer warps greatly, there is a possibility that the wafer cannot be smoothly transported by the transport mechanism after grinding, resulting in the possibility that the wafer cannot be removed or is damaged due to falling during transport. The wafer warp becomes particularly large when a UV-curable surface protection tape is used as the above-mentioned surface protection tape. UV-curable tapes are irradiated with ultraviolet rays, which causes the adhesive in the surface protection tape to harden and shrink due to the curing reaction. Therefore, compared with non-UV-curable tapes, the warp becomes greater and the risk of wafer damage becomes higher.

The conventional wafer processing method uses the following steps: after attaching a grinding surface protection tape to a semiconductor wafer, the wafer is ground to a specific thickness, ultraviolet rays are irradiated from the side of the surface protection tape to the semiconductor wafer to reduce the adhesion of the surface protection tape, and then a dicing tape is attached to the back side of the semiconductor wafer, and then the surface protection tape is peeled off. [Prior art literature] [Patent literature]

[Patent Document 1] Japanese Patent Application Publication No. 2004-235395

[The problem that the invention wants to solve]

In the above-mentioned conventional steps, if the surface protection tape is irradiated with ultraviolet light, the warp of the wafer increases, resulting in abnormal transportation. Therefore, from the perspective of suppressing the warp of the wafer, a method is considered in which the surface protection tape is not irradiated with ultraviolet light after grinding, but the side of the surface protection tape is irradiated with ultraviolet light after the dicing tape is attached, so as to reduce the adhesion of the surface protection tape.

However, if the surface protection tape is irradiated with ultraviolet light after the dicing tape is attached, part of the surface of the dicing tape is also irradiated with ultraviolet light. In particular, when the ultraviolet light is transferred from the edge of the wafer to the dicing tape side on the back, and the dicing tape is of the ultraviolet curing type, the adhesion near the edge of the wafer decreases due to the curing reaction. Therefore, as the subsequent cutting and separation (dicing) step of the semiconductor wafer, when blade dicing is selected to perform cutting processing using a blade, the wafers with reduced adhesion will fly away during dicing, which is called "chip scattering". With the occurrence of chip scattering, the following problems arise: the chip yield (chip manufacturing efficiency) is reduced, or the blade is damaged when the chip flying toward the blade collides with the blade.

In order to solve the above problem, the dicing tape is required to have a property that the adhesive force of the dicing tape does not decrease when ultraviolet rays are irradiated from the surface protection tape side. By using a tape with reduced ultraviolet curing reactivity or a non-ultraviolet curing tape as a dicing tape having the above property, the scattering of chips during dicing can be suppressed. On the other hand, when such a dicing tape is used, it becomes difficult to peel the chip from the dicing tape in the picking-up step of taking out the cut and separated chip, and the "chip picking-up property" becomes insufficient.

The present invention provides a UV-curable adhesive tape for semiconductor wafer processing. When the UV-curable adhesive tape is used in the semiconductor wafer processing step, it can suppress the warping of the thin film wafer caused by the UV irradiation along the surface protection tape, and can simultaneously achieve the suppression of chip scattering during dicing and excellent subsequent pickup performance. In addition, the present invention provides a semiconductor wafer manufacturing method, which can suppress the warping of the thin film wafer caused by the UV irradiation along the surface protection tape, and can simultaneously achieve the suppression of chip scattering during dicing and excellent subsequent pickup performance. In addition, the present invention provides a method for using a UV-curable adhesive tape for semiconductor wafer processing, which can suppress the decrease in the adhesive force of the UV-curable adhesive tape for semiconductor wafer processing and harden the UV-curable surface protection tape to sufficiently reduce its adhesive force. [Technical means for solving the problem]

The above-mentioned subject of the present invention is achieved by the following means. <1> A UV-curable adhesive tape for semiconductor wafer processing, which has at least a base film and a UV-curable adhesive layer disposed on the base film, and is characterized in that: the adhesive force value of the above-mentioned adhesive tape measured by the 90° peeling test method for SUS304 based on JIS Z 0237 satisfies the following (1) and (2) at the same time. (1) [Adhesion after irradiation with ultraviolet light having a cumulative light quantity of 500 mJ/ ^cm2 using an ultraviolet irradiation device with a wavelength of 365 nm LED lamp as a light source]/[Adhesion before irradiation with ultraviolet light] ≧0.50 (2) [Adhesion after irradiation with ultraviolet light having a cumulative light quantity of 500 mJ/ ^cm2 using an ultraviolet irradiation device with a high-pressure mercury lamp as a light source]/[Adhesion before irradiation with ultraviolet light] ≦0.50 <2> The ultraviolet curing adhesive tape for semiconductor wafer processing as described in <1>, wherein the above-mentioned [Adhesion before irradiation with ultraviolet light] is 1 N/25 mm to 10 N/25 mm. <3> The UV-curable adhesive tape for semiconductor wafer processing as described in <1> or <2>, wherein the adhesive layer contains a base polymer component and a photopolymerization initiator, and the content of the photopolymerization initiator is 0.1 to 3.0 parts by mass relative to 100 parts by mass of the base polymer component. <4> The UV-curable adhesive tape for semiconductor wafer processing as described in any one of <1> to <3>, wherein the base polymer is a polymer having a UV-polymerizable carbon-carbon double bond in the side chain. <5> The UV-curable adhesive tape for semiconductor wafer processing as described in any one of <1> to <4>, wherein the adhesive layer contains a UV absorber. <6> The UV-curable adhesive tape for semiconductor wafer processing according to any one of <1> to <5> is used in the step of cutting a semiconductor wafer. <7> A method for manufacturing a semiconductor chip, comprising the following steps (a) to (e). [Steps] (a) grinding the back side of a semiconductor wafer having a patterned surface on the front side with a UV-curable surface protection tape attached to the patterned surface side of the semiconductor wafer; (b) attaching any one of the UV-curable adhesive tapes for semiconductor wafer processing <1> to <6> to the back side of the ground semiconductor wafer and supporting and fixing the adhesive tape to a ring frame; (c) peeling off the surface protection tape after irradiating the surface with UV light from the side of the surface protection tape using a first UV irradiation device; (d) using a cutting device to cut the semiconductor wafer from the pattern side of the semiconductor wafer to singulate it into individual chip units; and (e) using a second ultraviolet irradiation device to irradiate ultraviolet light from the adhesive tape side. <8> The method for manufacturing a semiconductor chip as described in <7>, wherein the first ultraviolet irradiation device is an ultraviolet irradiation device using a 365 nm wavelength LED lamp as a light source. <9> The method for manufacturing a semiconductor chip as described in <7> or <8>, wherein the second ultraviolet irradiation device is an ultraviolet irradiation device using a high-pressure mercury lamp as a light source. <10> A method for using a UV-curable adhesive tape for semiconductor wafer processing, comprising the following steps: irradiating a semiconductor wafer having a UV-curable surface protection tape attached to one side of the semiconductor wafer and a UV-curable adhesive tape for semiconductor wafer processing of any one of <1> to <6> attached to the other side of the semiconductor wafer with UV light from the side of the UV-curable surface protection tape. <11> A method for using a UV-curable adhesive tape for semiconductor wafer processing as described in <10>, wherein the UV light irradiation is UV light irradiation using an LED lamp with a wavelength of 365 nm as a light source. <12> A method for using a UV-curable adhesive tape for semiconductor wafer processing as described in <10> or <11>, comprising the step of peeling off the UV-curable surface protection tape from the semiconductor wafer. <13> A method for using a UV-curable adhesive tape for semiconductor wafer processing as described in <12>, comprising the step of irradiating the side of the UV-curable adhesive tape for semiconductor wafer processing with UV rays after peeling off the UV-curable surface protection tape from the semiconductor wafer. <14> A method for using a UV-curable adhesive tape for semiconductor wafer processing as described in <13>, wherein the UV-irradiation from the side of the UV-curable adhesive tape for semiconductor wafer processing is UV-irradiation using a high-pressure mercury lamp as a light source. <15> A method for using a UV-curing adhesive tape for semiconductor wafer processing as described in any one of <10> to <14>, wherein the semiconductor wafer having a UV-curing surface protection tape adhered to one side of the semiconductor wafer and having a UV-curing adhesive tape for semiconductor wafer processing as described in any one of <1> to <6> adhered to the other side of the semiconductor wafer is produced during a semiconductor wafer processing step.

In the present invention, "(meth)acrylic acid" is abbreviated to mean either or both of acrylic acid and methacrylic acid. Therefore, when referred to as a (meth)acrylic acid polymer, the following meanings are included: a polymer of one or more monomers having an acryl group, a polymer of one or more monomers having a methacrylic group, and a polymer of one or more monomers having an acryl group and one or more monomers having a methacrylic group. In addition, in the present invention, the numerical range represented by "~" means a range including the numerical values before and after "~" as the lower limit and upper limit. [Effect of the invention]

The UV-curable adhesive tape for semiconductor wafer processing of the present invention can suppress the warping of the thin film wafer caused by the UV irradiation to the surface protection tape when used in the processing step of the semiconductor wafer, and can simultaneously achieve the suppression of chip scattering during cutting and the subsequent excellent pickup performance. In addition, the method for manufacturing semiconductor wafers of the present invention can suppress the warping of the thin film wafer caused by the UV irradiation to the surface protection tape, and can simultaneously achieve the suppression of chip scattering during cutting and the subsequent pickup performance. In addition, the method for using the UV-curable adhesive tape for semiconductor wafer processing of the present invention can suppress the reduction of the adhesive force of the UV-curable adhesive tape for semiconductor wafer processing of the present invention, and harden the UV-curable surface protection tape to sufficiently reduce the adhesive force.

The following is a detailed description of the implementation of the present invention.

[Ultraviolet-curable adhesive tape for semiconductor wafer processing] The ultraviolet-curable adhesive tape for semiconductor wafer processing of the present invention (hereinafter also referred to as "the adhesive tape of the present invention") 2 is a tape having at least a base film 3 and a ultraviolet-curable adhesive layer 4 provided on the base film 3. In addition, a peeling pad (also referred to as a separator film) provided as required may also be formed on the adhesive layer 4. Furthermore, when using the adhesive tape 2 of the present invention, the peeling pad is peeled off to expose the adhesive layer 4 for use.

(Adhesion of the Adhesive Tape of the Present Invention) The adhesive tape 2 of the present invention satisfies both the following (1) and (2) in terms of adhesion value measured by the 90° peel test method for SUS304 (stainless steel) based on JIS Z 0237. (1) [Adhesion after ultraviolet irradiation with a cumulative light quantity of 500 mJ/ ^cm2 using an ultraviolet irradiation device with a wavelength of 365 nm LED lamp as the light source]/[Adhesion before ultraviolet irradiation] (hereinafter also referred to as "A _LED /A ₀ ") ≧ 0.50 (2) [Adhesion after ultraviolet irradiation with a cumulative light quantity of 500 mJ/ ^cm2 using an ultraviolet irradiation device with a high-pressure mercury lamp as the light source]/[Adhesion before ultraviolet irradiation] (hereinafter also referred to as "A _HPM /A ₀ ") ≦ 0.50 The above-mentioned [Adhesion before ultraviolet irradiation] means the adhesion of the adhesive tape of the present invention in an unused state after it is manufactured. Furthermore, for the adhesive tape of the present invention that changes over time due to long-term storage, it means the adhesive force under the following conditions: it is stored under a condition where UV curing does not occur due to light shielding, etc. In addition, the so-called "adhesion after UV irradiation" means the adhesive force of the adhesive tape of the present invention in the unused state after irradiation with UV light of a cumulative light amount of 500 mJ/ ^cm2 using a UV irradiation device using various light sources. The specific measurement method of the above-mentioned adhesive force is as described in the items of the embodiment.

The above-mentioned [adhesion before ultraviolet irradiation] (A ₀ ) is preferably 1 N/25 mm to 10 N/25 mm, and more preferably 1 N/25 mm to 5 N/25 mm, from the perspective of sufficient adhesion between the adhesive tape of the present invention and the semiconductor wafer before ultraviolet irradiation. In the above (1), A _LED /A ₀ is preferably not less than 0.60, and more preferably not less than 0.70. Furthermore, the upper limit value of A _LED /A ₀ in the above (1) is not particularly limited, and is preferably not more than 1.30, more preferably not more than 1.20, further preferably not more than 1.10, and particularly preferably not more than 1.00. In the above (2), A _HPM /A ₀ is preferably not more than 0.40, more preferably not more than 0.30, and further preferably not more than 0.20. Furthermore, the lower limit of A _HPM /A ₀ in (2) above is not particularly limited, and is preferably 0.05 or more, and more preferably 0.10 or more. Furthermore, the ratio of [adhesion after irradiation with ultraviolet light of 500 mJ/cm ² using an ultraviolet irradiation device with a wavelength of 365 nm LED lamp as a light source] to [adhesion after irradiation with ultraviolet light of 500 mJ/cm ² using an ultraviolet irradiation device with a high-pressure mercury lamp as a light source] (hereinafter also referred to as "A _LED /A _HPM ") is preferably 0.2 to 200, and more preferably 2.0 to 100.

The adhesive tape 2 of the present invention can suppress the decrease of adhesive force under ultraviolet irradiation with _a 365 nm wavelength LED _lamp (also referred to as "LED _{lamp "} in this specification) as the light source by satisfying the above (1) and (2) at the same time, by the ratio of the adhesive force value before and after ultraviolet irradiation, i.e., A LED /A 0 and A HPM /A 0. The adhesive force can be sufficiently reduced by ultraviolet irradiation with a high-pressure mercury lamp as the light source. Therefore, when the adhesive tape 2 of the present invention is used as a dicing tape in the processing step of semiconductor wafers, the decrease of adhesive force under ultraviolet irradiation to the surface protective tape can be suppressed by using an LED lamp as the light source for ultraviolet irradiation to the surface protective tape. Even if the ultraviolet light of the LED lamp is transferred to the adhesive tape 2 (dicing tape) of the present invention, the wafer flying during dicing can be suppressed. Furthermore, the adhesive tape 2 of the present invention can be irradiated with ultraviolet light using a high-pressure mercury lamp as a light source, so that the adhesive force of the adhesive tape 2 of the present invention can be sufficiently reduced, and excellent pickup properties can be exhibited.

(Base Film) The base film 3 of the present invention is not particularly limited, and a known resin such as plastic can be used. As a base film constituting a tape for dicing semiconductor wafers (hereinafter referred to as "dicing tape"), a thermoplastic plastic film is generally used. The resin (material) constituting the substrate film 3 is preferably: polyolefins such as polyethylene, polypropylene, ethylene-propylene copolymer and polybutene; thermoplastic elastomers such as styrene-hydrogenated isoprene-styrene block copolymer, styrene-isoprene-styrene copolymer, styrene-hydrogenated butadiene-styrene copolymer and styrene-hydrogenated isoprene/butadiene-styrene copolymer; ethylene copolymers such as ethylene-vinyl acetate copolymer, ethylene-(methyl)acrylic acid copolymer, ethylene-(methyl)acrylate copolymer and ethylene-(methyl)acrylic acid metal salt ion polymer; engineering plastics such as polyethylene terephthalate, polybutylene terephthalate, polycarbonate and polymethyl methacrylate; polymer materials such as soft polyvinyl chloride, semi-rigid polyvinyl chloride, polyester, polyurethane, polyamide, polyimide, natural rubber and synthetic rubber. In the above-mentioned ethylene copolymer, (meth)acrylic acid, (meth)acrylate and (meth)acrylate metal salt as the constituent unit of the resin may be contained in the ethylene copolymer at one kind or at least two kinds. In addition, the metal salt in the ethylene-(meth)acrylate metal salt ionic polymer is preferably a metal salt with a valence of two or more, for example, Zn ²⁺ metal salt can be listed. As the resin constituting the base film 3, one kind or two or more kinds of resins can be used. The base film 3 can be a single-layer structure or a multilayer structure formed by laminating two or more layers. The resin constituting the base film 3 can be appropriately selected according to the adhesion with the adhesive layer 4.

The base film 3 can be a commercially available one, or a film made by conventional methods such as casting, T-die, inflation, and calendering. The thickness of the base film 3 is not particularly limited, and can be set to the thickness of the base film in a general dicing tape. Generally, 30 to 200 μm is preferred, and 50 to 150 μm is more preferred.

In order to improve the adhesion of the surface of the base film 3 in contact with the adhesive layer 4, any surface treatment such as corona treatment and primer treatment may be performed.

<Adhesive layer> The adhesive constituting the adhesive layer 4 is not particularly limited, as long as it is an ultraviolet curing adhesive (hereinafter also referred to as "adhesive") that satisfies the ratio of adhesive force before and after ultraviolet irradiation specified in (1) and (2) above. Specifically, the adhesive layer 4 containing the above-mentioned ultraviolet curing adhesive hardly cures under ultraviolet irradiation using an LED lamp with a wavelength of 365 nm as a light source, and the adhesive force is not easily reduced by the ultraviolet irradiation. On the other hand, it cures under ultraviolet irradiation using a high-pressure mercury lamp as a light source, and the adhesive force can be sufficiently reduced, making it easy to peel from the semiconductor wafer (semiconductor chip). That is, if a high-pressure mercury lamp is used as a light source, light with a wide wavelength distribution including wavelengths such as 254 nm, 313 nm, 365 nm, 405 nm, and 436 nm can be irradiated, so that the curing reaction can be made more efficient compared to the case where an LED lamp with a wavelength of 365 nm is used as a light source. In the present invention, the adhesive layer 4 is an ultraviolet curing type layer whose curing reactivity varies depending on the wavelength region (wavelength distribution) of the irradiated ultraviolet light.

The polymer contained in the above-mentioned adhesive (also referred to as "base polymer" in this specification) is preferably a (meth)acrylic polymer. The content of the base polymer contained in the adhesive layer 4 is preferably 50 to 95% by mass, and more preferably 70 to 95% by mass.

(UV-curing adhesive) The above-mentioned UV-curing adhesive can be any adhesive whose curing reactivity varies depending on the wavelength range of the UV irradiated as described above. Here, the curing by UV irradiation using a high-pressure mercury lamp as a light source can be performed by utilizing the properties of three-dimensional networking, and can be roughly divided into two categories: 1) Adhesives containing a base polymer having UV-polymerizable carbon-carbon double bonds (ethylene double bonds) in the side chain; 2) Adhesives containing low molecular weight compounds (hereinafter referred to as UV-polymerizable low molecular weight compounds) having at least two UV-polymerizable carbon-carbon double bonds (ethylene double bonds) in the molecule, relative to general rubber-based or (meth)acrylic pressure-sensitive base polymers.

If the adhesive tape 2 of the present invention contains a low molecular weight compound (molecular weight of about 1000 or less), there is a possibility that the following phenomenon is observed: after the adhesive tape is attached to the semiconductor wafer, if the time until UV irradiation or pickup is long, the low molecular weight compound will transfer to the interface between the adhesive tape and the semiconductor wafer or semiconductor chip, thereby increasing the adhesion and making it difficult to peel the adhesive tape and the semiconductor chip during pickup. Therefore, the above-mentioned UV-curing adhesive is preferably an adhesive containing a base polymer having a UV-polymerizable carbon-carbon double bond (ethylene double bond) in the side chain as described in 1). The adhesive of 1) may contain a low molecular weight compound, but it is more preferable that the content of the low molecular weight compound is such that the above-mentioned peeling phenomenon does not become difficult. Furthermore, there is no limitation to containing the photopolymerization initiator and the curing agent described below.

(Adhesive composed of a base polymer having ultraviolet-polymerizable carbon-carbon double bonds in the side chains) When the adhesive constituting the adhesive layer 4 contains a base polymer having ultraviolet-polymerizable carbon-carbon double bonds in the side chains, the adhesive layer 4 preferably contains a (meth)acrylic polymer having ultraviolet-polymerizable carbon-carbon double bonds in the side chains. The content of the (meth)acrylic polymer having ultraviolet-polymerizable carbon-carbon double bonds in the side chains in the adhesive layer 4 is preferably 50% by mass or more, more preferably 80% by mass or more. The (meth)acrylic polymer may have functional groups such as epoxy groups or carboxyl groups in addition to the UV-polymerizable carbon-carbon double bonds (ethylene double bonds) of the side chains.

As a (meth)acrylic polymer having an ultraviolet-polymerizable carbon-carbon double bond in the side chain, it is preferred that the (meth)acrylic polymer has an ethylene carbon-carbon double bond in at least one constituent unit of the polymer. The above-mentioned (meth)acrylic polymer can be prepared arbitrarily and can be prepared by conventional methods. For example, it is preferred that a (meth)acrylic polymer having a functional group (α) in the side chain is reacted with the following compound, wherein the compound has an ultraviolet-polymerizable carbon-carbon double bond such as a (meth)acryloyl group and has a functional group (β) that can react with the functional group (α) of the side chain of the (meth)acrylic polymer. The group having a UV-polymerizable carbon-carbon double bond may be any group as long as it has a non-aromatic ethylenic double bond, but preferably is a (meth)acryl group, a (meth)acryloxy group, a (meth)acrylamide group, an allyl group, a 1-propenyl group, a vinyl group (including styrene or substituted styrene), and more preferably is a (meth)acryl group or a (meth)acryloxy group. As functional groups (α) and (β), carboxyl, hydroxyl, amino, hydroxyl, cyclic anhydride, epoxy, isocyanate (-N=C=O), etc. may be listed.

Here, when one of the functional groups (α) and the functional group (β) is a carboxyl group, a hydroxyl group, an amino group, a hydroxyl group, or a cyclic anhydride group, the other functional group may be an epoxide group or an isocyanate group. When one of the functional groups is a cyclic anhydride group, the other functional group may be a carboxyl group, a hydroxyl group, an amino group, or a hydroxyl group. Furthermore, when one of the functional groups is an epoxide group, the other functional group may also be an epoxide group.

As the functional group (α), a carboxyl group or a hydroxyl group is preferred, and a hydroxyl group is particularly preferred. The (meth)acrylic polymer having a functional group (α) in the side chain can be obtained by using a (meth)acrylic monomer having a functional group (α), preferably a (meth)acrylic ester [especially one having a functional group (α) in the alcohol part] as a monomer component. The (meth)acrylic polymer having a functional group (α) in the side chain is preferably a copolymer. In this case, the copolymer component with the (meth)acrylic monomer having a functional group (α) in the side chain is preferably an alkyl (meth)acrylate, and particularly preferably an alkyl (meth)acrylate in which the functional group (α) or a group having an ultraviolet-polymerizable carbon-carbon double bond is not substituted in the alcohol part.

As the above-mentioned (meth)acrylate, for example, there can be listed: methyl acrylate, ethyl acrylate, n-propyl acrylate, n-butyl acrylate, isobutyl acrylate, n-pentyl acrylate, n-hexyl acrylate, n-octyl acrylate, iso-octyl acrylate, 2-ethylhexyl acrylate, dodecyl acrylate, decyl acrylate, hexyl acrylate, and methacrylates corresponding thereto. The (meth)acrylate may be one or more, but preferably, a combination of an alcohol having a carbon number of 5 or less and an alcohol having a carbon number of 6 to 12.

Furthermore, the glass transition point (Tg) becomes lower when a monomer with a larger carbon number in the alcohol part is used, so the desired glass transition point can be obtained. In addition, in order to improve the compatibility and various properties, it is also preferred to mix low molecular weight compounds containing carbon-carbon double bonds such as vinyl acetate, styrene, and acrylonitrile. At this time, the content of these monomer components is preferably within the range of 5 mass % or less.

Examples of (meth)acrylic monomers having a functional group (α) include acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, ethylene glycol monoacrylates, ethylene glycol monomethacrylates, N-hydroxymethylacrylamide, N-hydroxymethylmethacrylamide, allyl alcohol, N-alkyl acrylate, Aminoethyl esters, N-alkylaminoethyl methacrylates, acrylamides, methacrylamide, maleic anhydride, itaconic anhydride, fumaric anhydride, phthalic anhydride, glycidyl acrylate, glycidyl methacrylate, allyl glycidyl ether, and those obtained by esterifying a portion of the isocyanate groups of a polyisocyanate compound with a monomeric amine having a hydroxyl group or a carboxyl group and an ultraviolet-polymerizable carbon-carbon double bond, etc.

Among them, acrylic acid, methacrylic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, glycidyl acrylate or glycidyl methacrylate is particularly preferred, acrylic acid, methacrylic acid, 2-hydroxyalkyl acrylates or 2-hydroxyalkyl methacrylates is more preferred, and 2-hydroxyalkyl acrylates or 2-hydroxyalkyl methacrylates is further preferred.

The functional group (β) in the compound having an ultraviolet-polymerizable carbon-carbon double bond and a functional group (β) is preferably an isocyanate group. For example, (meth)acrylates having an isocyanate (-N=C=O) group in the alcohol portion can be cited, and (meth)acrylate alkyl esters substituted with an isocyanate (-N=C=O) group are particularly preferred. Examples of such monomers include 2-isocyanateethyl methacrylate and 2-isocyanateethyl acrylate. In addition, preferred compounds in the case where the functional group (β) is other than an isocyanate group can be cited as compounds exemplified in the (meth)acrylate monomer having a functional group (α).

By reacting a compound having a UV-polymerizable carbon-carbon double bond and a functional group (β) with a (meth)acrylic polymer having a functional group (α) on the side chain, a UV-polymerizable carbon-carbon double bond can be incorporated into the polymer, thereby forming a UV-curable adhesive layer.

In the synthesis of (meth)acrylic polymers, ketone, ester, alcohol, and aromatic organic solvents can be used when performing the reaction by solution polymerization, but particularly preferred are solvents with a boiling point of 60 to 120°C among general good solvents for (meth)acrylic polymers such as toluene, ethyl acetate, isopropyl alcohol, benzyl cellulose, ethyl cellulose, acetone, and methyl ethyl ketone. As polymerization initiators, free radical generators such as azobis-based solvents such as α,α'-azobisisobutyronitrile and organic peroxides such as benzoyl peroxide are generally used. At this time, a catalyst and a polymerization inhibitor can be used as needed, and the (meth)acrylic polymer of the desired molecular weight can be obtained by adjusting the polymerization temperature and polymerization time. In addition, for adjusting the molecular weight, it is preferred to use solvents such as mercaptans and carbon tetrachloride. Furthermore, the reaction is not limited to solution polymerization, and may also be other methods such as bulk polymerization and suspension polymerization.

The mass average molecular weight (Mw) of the base polymer [preferably a (meth) acrylic polymer] having a UV-polymerizable carbon-carbon double bond in the side chain is preferably about 200,000 to 1,000,000. If the mass average molecular weight is 1,000,000 or less, the adhesive layer 4 does not become brittle and has flexibility even after UV irradiation when irradiated with UV rays, so it is not easy to generate paste residue on the semiconductor chip surface during peeling. In addition, if the mass average molecular weight is 200,000 or more, the cohesive force before UV irradiation is not too small, and it has sufficient adhesion, so the semiconductor chip can be fully held during cutting, and it is not easy to generate chip scattering. In addition, the curing after UV irradiation is more sufficient, and it is not easy to generate paste residue on the semiconductor chip surface during peeling. The mass average molecular weight in the present invention refers to the mass average molecular weight converted to polystyrene.

The amount of UV-polymerizable carbon-carbon double bonds introduced into the base polymer having UV-polymerizable carbon-carbon double bonds in the side chain is preferably 0.8 to 1.8 meq/g, and more preferably 0.8 to 1.5 meq/g. If the amount of UV-polymerizable carbon-carbon double bonds introduced is within the above range, the curing reaction is fully carried out by UV irradiation using a high-pressure mercury lamp as a light source, and the paste has sufficient fluidity, thereby reducing the paste residue.

The glass transition point of the base polymer having ultraviolet-polymerizable carbon-carbon double bonds in the side chain is preferably -70 to -35°C, and more preferably -70 to -40°C. If the glass transition point is above the lower limit, the fluidity of the adhesive will not be too high and the paste residue can be suppressed. If it is below the upper limit, it has sufficient fluidity to adapt to the back side of the semiconductor wafer, and when the adhesive tape of the present invention is extended, it can also suppress peeling from the semiconductor wafer. The glass transition temperature of the base polymer used for the adhesive layer 4 is a value measured by a differential scanning calorimeter (DSC) under the condition of a heating rate of 0.1°C/min. As a differential scanning calorimeter, for example, DSC-60 (trade name) manufactured by Shimadzu Corporation can be cited. The glass transition temperature in the present invention is an extrapolated glass transition starting temperature from JIS K 7121 "Determination of transition temperature of plastics".

The acid value of the base polymer having ultraviolet-polymerizable carbon-carbon double bonds in the side chain [the number of mg of potassium hydroxide required to neutralize free fatty acids in 1 g of the base polymer] is preferably 0.5 to 30, and more preferably 1 to 20. The hydroxyl value of the base polymer having ultraviolet-polymerizable carbon-carbon double bonds in the side chain [the number of mg of potassium hydroxide required to neutralize acetic acid bonded to the hydroxyl group when 1 g of the base polymer is acetylated] is preferably 5 to 100, and more preferably 10 to 80. Thereby, the effect of suppressing the paste residue during the peeling of the adhesive tape of the present invention is more excellent.

Furthermore, the acid value or hydroxyl value can be adjusted to a desired value by leaving unreacted functional groups in the step of reacting a (meth)acrylic polymer having a functional group (α) on the side chain with a compound having an ultraviolet-polymerizable carbon-carbon double bond and containing a functional group (β) that can react with the functional group (α) on the side chain of the (meth)acrylic polymer.

(Hardener) The adhesive containing a base polymer having a UV-polymerizable carbon-carbon double bond in the side chain preferably contains a hardener. The hardener is used to react with the functional group of the base polymer to adjust the adhesion and cohesion. Preferably, polyisocyanates, melamine-formaldehyde resins and epoxy resins can be listed as the above-mentioned hardener. In the present invention, polyisocyanates are particularly preferred.

The polyisocyanates are not particularly limited, and examples thereof include aromatic isocyanates such as 4,4'-diphenylmethane diisocyanate, toluene diisocyanate, xylylene diisocyanate, 4,4'-diphenyl ether diisocyanate, 4,4'-[2,2-bis(4-phenoxyphenyl)propane] diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate, isophorone diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, 2,4'-dicyclohexylmethane diisocyanate, lysine diisocyanate, lysine triisocyanate, etc. Specifically, CORONATE L (trade name, manufactured by Nippon Polyurethane Co., Ltd.) etc. can be used.

Specifically, as the melamine-formaldehyde resin, NIKALAC MX-45 (trade name, manufactured by Sanwa Chemical Co., Ltd.), MELAN (trade name, manufactured by Hitachi Chemical Co., Ltd.), etc. can be used.

As the epoxy resin, TETRAD-X (trade name, manufactured by Mitsubishi Chemical Co., Ltd.) or the like can be used.

After the adhesive is applied, the base polymer forms a cross-linked structure by the hardener, thereby improving the cohesive force of the adhesive. The hardener in the adhesive layer 4 of the unused adhesive tape is in a state where it has already reacted with the base polymer. Furthermore, in the present invention, when it is referred to as "base polymer component", it does not contain the hardener component. That is, in a state where the base polymer and the hardener have reacted, the structural part other than the hardener component is referred to as the base polymer component. However, the hardener contained in the adhesive layer 4 may react in its entirety or in part.

In the adhesive layer 4, the content of the hardener component is preferably 0.1 to 10 parts by mass, and more preferably 1 to 10 parts by mass, relative to 100 parts by mass of the base polymer component. If the content of the hardener component is above the above lower limit, the cohesion improvement effect becomes sufficient, and the adhesive paste residue is suppressed. In addition, the adhesive layer and the adherend surface are not easily offset, and peeling during expansion is suppressed. If the blending amount of the hardener is below the above upper limit, the curing reaction will not be rapidly formed during the blending and coating of the adhesive, so the workability is excellent. In addition, the softness of the adhesive is not damaged, and peeling during expansion is suppressed.

In order to add cohesive force to the base polymer of the adhesive, a crosslinking agent may be mixed in addition to the above-mentioned polyisocyanates, melamine-formaldehyde resins and epoxy resins. As the crosslinking agent, corresponding to the base polymer, for example, metal chelate crosslinking agents, aziridine crosslinking agents, and amine resins can be listed. Furthermore, the adhesive may contain various additives as needed within the scope that does not impair the purpose of the present invention.

(Photopolymerization initiator) When a base polymer having a UV-polymerizable carbon-carbon double bond in a side chain is cured by UV irradiation, it is preferred to mix a photopolymerization initiator in the adhesive. There is no particular limitation on the photopolymerization initiator, and generally used photopolymerization initiators can be widely used. For example, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, michler's ketone, chloro-9-oxysulfonate, , dodecyl-9-oxysulfide , dimethyl-9-oxysulfide , diethyl-9-oxysulfide , diphenylethylene dimethyl ketone, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethylphenyl propane, etc. In order to make the adhesive tape 2 of the present invention have a difference in reactivity to a specific wavelength region, in the adhesive layer 4, the content of the photopolymerization initiator is preferably 0.1 to 3.0 parts by mass, more preferably 0.1 to 1.5 parts by mass, and further preferably 0.1 to 1.0 parts by mass relative to 100 parts by mass of the base polymer component. If the content of the photopolymerization initiator is below the above upper limit, the curing reactivity by ultraviolet irradiation using an LED lamp with a wavelength of 365 nm as a light source and the curing reactivity by ultraviolet irradiation using a high-pressure mercury lamp as a light source can have a desired difference. If the content of the photopolymerization initiator is above the above lower limit, the curing reaction proceeds sufficiently when irradiated with ultraviolet rays using a high-pressure mercury lamp as a light source, thereby curing and further improving the releasability of the adhesive tape 2 of the present invention from the adherend.

(Ultraviolet light absorber) For the adhesive tape 2 of the present invention, an ultraviolet light absorber may be added to the adhesive in order to improve the absorbency in a specific wavelength region and control the curing reactivity when using a specific light source.

The ultraviolet absorber preferably contains: At least one of the ultraviolet absorbers having a skeleton, a benzophenone skeleton, a benzotriazole skeleton or a benzoate skeleton. The skeleton compounds include, for example: 2,4-bis[2-hydroxy-4-butoxyphenyl]-6-(2,4-dibutoxyphenyl)-1,3,5-tri , 2,4-bis(2,4-dimethylphenyl)-6-(2-hydroxy-4-n-octyloxyphenyl)-1,3,5-triazine , 2-(2,4-dihydroxyphenyl)-4,6-bis(2,4-dimethylphenyl)-1,3,5-triazine , 2-(2,4-dihydroxyphenyl)-4,6-diphenyl-1,3,5-triazine , 2-(2-hydroxy-4-methoxyphenyl)-4,6-diphenyl-1,3,5-trimethoxyphenyl .

Examples of the compound having the benzophenone skeleton include 2,4-dihydroxybenzophenone, 2,2'-dihydroxy-4,4'-dimethoxybenzophenone, 2-hydroxy-4-methoxybenzophenone, 2-hydroxy-4-n-octyloxybenzophenone, and 2,2',4,4'-tetrahydroxybenzophenone.

Examples of compounds having the benzotriazole skeleton include 2-(2-hydroxy-5-tert-butylphenyl)-2H-benzotriazole, 2-(2H-benzotriazol-2-yl)-4,6-bis(1-methyl-1-phenylethyl)phenol, and 2-(2H-benzotriazol-2-yl)-6-(1-methyl-1-phenylethyl)-4-(1,1,3,3-tetramethylbutyl)phenol.

Examples of the compound having the benzoate skeleton include 2,4-di-tert-butylphenyl-3,5-di-tert-butyl-4-hydroxybenzoate and 2,4-di-tert-butylphenyl-4'-hydroxy-3',5'-di-tert-butylbenzoate.

The above-mentioned ultraviolet absorber can be commercially available, for example, the following ultraviolet absorbers can be listed, all of which are trade names: ADEKASTAB LA series (LA-24, LA-29, LA-31, LA-32, LA-36, LA-F70, 1413) manufactured by ADEKA Co., Ltd.; TINUVIN P, TINUVIN 234, TINUVIN 326, TINUVIN 329, TINUVIN 213, TINUVIN 571, TINUVIN 1577ED, CHIMASSORB 81, TINUVIN 120, etc. manufactured by BASF.

The UV absorber may be one or two or more. The amount of UV absorber added can be adjusted according to the curing reactivity in the desired wavelength region. For example, relative to 100 parts by mass of the base polymer, it is preferably 0.1 to 10.0 parts by mass, more preferably 0.1 to 5.0 parts by mass, and further preferably 0.1 to 1.0 parts by mass.

The adhesive may contain a solvent from the viewpoint of coating properties when the adhesive is coated on the peeling pad and preparing a homogeneous adhesive. The above-mentioned solvent is not particularly limited, and the solvent commonly used in the adhesive of the tape for processing semiconductor wafers can be cited.

The thickness of the adhesive layer 4 is not particularly limited and can be appropriately set, but in the present invention, it is preferably 5 to 30 μm.

Regarding the adhesive tape 2 of the present invention, in order to protect the adhesive layer 4 before use, it is preferred that a peeling film is temporarily adhered to the upper surface of the adhesive layer 4.

<Manufacturing method> In the present invention, the method of setting the base film 3 and the method of setting the adhesive layer 4 on the base film 3 are not particularly limited, and can be appropriately selected from known methods. An example is described below, but it is not limited to the following example. An adhesive is applied on a peeling pad to form an adhesive layer 4 with a desired thickness. The adhesive tape 2 of the present invention can be produced by bonding the adhesive layer 4 to the base film 3 (the resin constituting the base film is film-formed). In addition, the adhesive tape of the present invention is also preferably stored under light-shielding conditions after production.

<Application> The adhesive tape 2 of the present invention can suppress the decrease of adhesive force under ultraviolet irradiation with LED as the light source, and can fully reduce the adhesive force by ultraviolet irradiation with high-pressure mercury lamp as the light source. Therefore, in the manufacture of semiconductor chips, by using the adhesive tape 2 of the present invention as a dicing tape (fixing tape), the warping of the thin film wafer caused by ultraviolet irradiation accompanying the surface protection tape can be suppressed, and the chip scattering during dicing and the excellent pickup performance thereafter can be simultaneously achieved. In addition, the method of using the adhesive tape of the present invention can be preferably used, that is, the adhesive tape 2 of the present invention and the ultraviolet curing type surface protection tape are respectively attached to the semiconductor wafer, and the ultraviolet curing type surface protection tape is cured by ultraviolet irradiation with an LED lamp with a wavelength of 365 nm as the light source. In this method of use, the decrease in the adhesive force of the adhesive tape 2 of the present invention can be fully suppressed, and the UV-curable surface protection tape can be cured and peeled off from the semiconductor wafer. Furthermore, in order to achieve the desired adhesive force, the irradiation conditions of each UV light can be appropriately adjusted.

[Method for manufacturing semiconductor chips] The method for manufacturing semiconductor chips of the present invention is a method for obtaining semiconductor chips using the adhesive tape 2 of the present invention. Preferably, a UV-curable surface protection tape (hereinafter also referred to as "surface protection tape") is adhered to the pattern surface side of a semiconductor wafer having a pattern surface on the front side, and the pattern surface is protected in this state while the back side of the semiconductor wafer is ground. Next, the adhesive tape 2 of the present invention is adhered to the back side of the semiconductor wafer, and it is supported and fixed to a ring frame. Thereafter, ultraviolet rays are irradiated from the side of the surface protection tape using a first ultraviolet irradiation device, and then the surface protection tape is peeled off to expose the pattern surface on the front side of the semiconductor wafer. Then, a cutting device can be used to cut the semiconductor wafer from the pattern side of the semiconductor wafer to singulate it into individual chip units (cutting), thereby obtaining the target semiconductor chip. There is no special limitation on the cutting method, and a general method can be adopted. Among them, cutting using a cutting blade is particularly preferred. The method for manufacturing the semiconductor chip of the present invention is preferably to further irradiate ultraviolet rays from the side of the adhesive tape 2 of the present invention by a second ultraviolet irradiation device, thereby reducing the adhesion of the adhesive tape 2. Then, it is also preferred to have a step of picking up the semiconductor chip from the adhesive tape 2 of the present invention. Moreover, it may further include a step of transferring the picked-up semiconductor chip to a die bonding step. The first ultraviolet irradiation device is preferably an ultraviolet irradiation device using, for example, an LED lamp with a wavelength of 365 nm as a light source. Moreover, the second ultraviolet irradiation device is preferably an ultraviolet irradiation device using, for example, a high-pressure mercury lamp as a light source. The conditions of ultraviolet irradiation using the first ultraviolet irradiation device and ultraviolet irradiation using the second ultraviolet irradiation device can be appropriately adjusted according to the curing reactivity of the surface protection tape used and the adhesive tape 2 of the present invention to the light source. There is no particular restriction on the irradiation conditions. For example, the ultraviolet irradiation using a 365 nm wavelength LED lamp as the light source is preferably irradiated with an intensity of 30 mW/cm ² to 50 mW/cm ² , and preferably with a cumulative light quantity of 200 mJ/cm ² to 1000 mJ/cm ^2. The ultraviolet irradiation using a high-pressure mercury lamp as the light source is preferably irradiated with an intensity of 40 mW/cm ² to 80 mW/cm ² , and preferably with an ultraviolet ray (wavelength 250 nm to 450 nm) with a cumulative light quantity of 200 mJ/cm ² to 1000 mJ/cm ^2. In addition, there is no particular restriction on the type of the high-pressure mercury lamp, and a generally used high-pressure mercury lamp can be used.

As the above-mentioned UV-curable surface protection tape, generally, a UV-curable surface protection tape for protecting the pattern surface of a semiconductor wafer can be used in the manufacturing step of a semiconductor chip. Specifically, there is no particular limitation as long as it has at least a base film and a UV-curable adhesive layer provided on the base film. In addition, it is also preferable to cite a film-like semiconductor sealant having an NCF (non conductive film) on the side of the adhesive layer opposite to the side having the base film. When the surface protection tape is in the form of a film-like semiconductor sealant, the so-called peeling of the surface protection tape from the semiconductor wafer means peeling the base film and the adhesive layer as a whole while the film-like semiconductor sealant remains on the semiconductor wafer.

Regarding the method for manufacturing a semiconductor chip of the present invention (hereinafter also referred to as "the manufacturing method using the present invention"), its preferred embodiments are described below with reference to FIGS. 1 to 4. Furthermore, in the following embodiments, unless otherwise specified, the present invention is not limited to the following embodiments except for the contents specified therein. Furthermore, the forms shown in the various figures are schematic cross-sectional views for easy understanding of the present invention, and the size, thickness, or relative size relationship of each component is changed for the convenience of explanation, and does not directly display the actual relationship. Furthermore, the present invention is not limited to the shapes and forms shown in the figures except for the matters specified therein.

The semiconductor wafer 1 has a pattern surface on which a circuit of a semiconductor element is formed on its front side S (see sub-figure 1 (A)). The pattern surface is a surface on which a circuit of a semiconductor element is formed, and has a street when viewed from above. A surface protection tape 11 having a UV-curing adhesive layer 13 is bonded to the side of the pattern surface, and a semiconductor wafer 1 having a pattern surface covered with the surface protection tape 11 is obtained (see sub-figure 1 (B)). In sub-figure 1 (B), the base film 12 and the adhesive layer 13 are combined to form the surface protection tape 11. Furthermore, the arrow DA in sub-figure 1 (A) indicates the direction in which the surface protection tape 11 is bonded to the semiconductor wafer 1.

Next, the back side of the semiconductor wafer 1 is ground by the wafer grinding device M1 to reduce the thickness of the semiconductor wafer 1 (see sub-figure 2 (A)). Thereafter, the adhesive tape 2 of the present invention is attached to the back side B of the ground semiconductor wafer 1B (see sub-figure 2 (B)), and the adhesive tape 2 of the present invention is supported and fixed on the annular frame F (see sub-figure 2 (C), sub-figure 3 (A)). Furthermore, the arrow DB in sub-figure 2 (A) indicates the rotation direction of the grinding stone in the wafer grinding device M1, and the arrow DC in sub-figure 2 (B) indicates the direction in which the adhesive tape 2 of the present invention is attached to the back side B of the semiconductor wafer 1.

Next, the first ultraviolet irradiation device UVS1 using an LED lamp with a wavelength of 365 nm as a light source is used to irradiate ultraviolet UV (indicated by the arrow in sub-figure 3 (B)) from the pattern side of the semiconductor wafer 1B covered by the surface protection tape 11 (refer to sub-figure 3 (B)). After the adhesive layer 13 of the surface protection tape 11 is hardened by the ultraviolet UV irradiation and its adhesion is reduced, the surface protection tape 11 is peeled off (refer to sub-figure 3 (C)) to expose the front side of the semiconductor wafer (refer to sub-figure 4 (A)).

Next, the pattern side (front side S) of the semiconductor wafer 1 is processed by a dicing blade D to cut the wafer, dividing it into individual chips 7 and singulating it (refer to sub-figure 4 (B)). Finally, the second ultraviolet irradiation device UVS2 using a high-pressure mercury lamp as a light source irradiates ultraviolet UV from the back side B of the semiconductor wafer 1 (indicated by the arrow in sub-figure 4 (C)) (refer to sub-figure 4 (C)). By the ultraviolet UV irradiation, the adhesive layer 4 of the adhesive tape 2 of the present invention is hardened and the adhesive force is reduced. Thereafter, the singulated chip 7 is lifted up by a pick-up device by a push pin and picked up by adsorption by a collet (not shown).

After the ultraviolet irradiation of the second ultraviolet irradiation device UVS2 using a high-pressure mercury lamp as a light source as shown in sub-Fig. 4 (C) and before the picking step, it is also preferred to expand the adhesive tape 2 of the present invention and set a certain distance between the singulated chips 7. At this time, an expandable tape is used as the adhesive tape 2 of the present invention. The conditions such as the expansion speed and the expansion amount can be appropriately adjusted, for example, the state of using an expander can be listed.

The above-mentioned embodiments are examples of the present invention and are not limited to such embodiments. Addition, deletion, and modification of known processes in various processes may be performed without departing from the spirit of the present invention.

[Method for using the adhesive tape of the present invention] The method for using the adhesive tape of the present invention comprises the following steps: for a semiconductor wafer having a UV-curable surface protection tape attached to one side (e.g., the pattern side) of the semiconductor wafer 1 and having the adhesive tape 2 of the present invention attached to the other side of the semiconductor wafer 1, ultraviolet light is irradiated from the side of the surface protection tape 11. The surface protection tape 11 (preferably the adhesive layer of the surface protection tape) is hardened by the ultraviolet light irradiation to reduce its adhesive force. The ultraviolet light irradiation is preferably ultraviolet light irradiation using an LED lamp with a wavelength of 365 nm as a light source.

In the method for using the adhesive tape 2 of the present invention, it is preferred to have a step of peeling off the surface protection tape 11 from the semiconductor wafer after the above-mentioned ultraviolet irradiation, and it is further preferred to have a step of irradiating ultraviolet rays from the side of the adhesive tape 2 of the present invention after the step of peeling off the surface protection tape 11. The ultraviolet irradiation is used to harden the adhesive layer of the adhesive tape 2 of the present invention, thereby reducing its adhesive force. The above-mentioned ultraviolet irradiation is preferably ultraviolet irradiation using a high-pressure mercury lamp as a light source.

The above-mentioned ultraviolet irradiation conditions can be appropriately adjusted according to the reactivity of the surface protection tape 11 and the adhesive tape 2 of the present invention to the light source within the range that does not damage the effect of the present invention. The irradiation conditions are not particularly limited. For example, the ultraviolet irradiation conditions described in the semiconductor chip manufacturing method of the present invention can be preferably applied.

The method for using the adhesive tape of the present invention can be preferably applied to the manufacturing method of the above-mentioned semiconductor chip. In addition, the method for using the adhesive tape 2 of the present invention can also be preferably used in the processing step of the middle layer of the TSV (Through-Silicon Via) wafer using a film-like semiconductor sealant one-piece surface protection tape (hereinafter also referred to as "one-piece surface protection tape"). Specifically, the processing step of the middle layer of the TSV wafer includes the following steps. First, a through hole is formed in a state where a supporting glass is attached to one side of the wafer. Secondly, the back side grinding (BG grinding) of the wafer surface opposite to the surface attached with the supporting glass (opposite side) is performed, and a bump is formed on the ground surface. Next, after the dicing tape is attached to the bump-forming surface, the supporting glass is removed. Next, a one-piece surface protection tape of a film-like semiconductor sealant is attached to the surface from which the supporting glass has been removed. Thereafter, ultraviolet irradiation is performed from the one-piece surface protection tape side to peel off the surface protection tape, leaving only the film-like semiconductor sealant on the wafer. In the above processing steps, there is a state where the dicing tape and the one-piece surface protection tape are attached to both sides of the wafer, respectively. Therefore, the inventors of the present invention have found out from their research that if the one-piece surface protection tape is irradiated with ultraviolet rays, a portion of the surface of the dicing tape is also irradiated with ultraviolet rays. When a general ultraviolet curing tape is used as the dicing tape, the adhesion near the end of the wafer is reduced, and there is a risk of chip scattering during dicing. On the other hand, by using the adhesive tape 2 of the present invention as a dicing tape, it is possible to suppress the decrease in adhesiveness due to ultraviolet irradiation of the one-piece surface protection tape, and to suppress the occurrence of chip scattering during dicing.

That is, the above-mentioned "semiconductor wafer having a UV-curable surface protection tape attached to one side of the semiconductor wafer and an adhesive tape of the present invention attached to the other side of the semiconductor wafer" is preferably produced in the processing step of the semiconductor wafer. [Example]

Hereinafter, the present invention will be described in further detail based on embodiments, but the present invention is not limited thereto.

[Example 1] (1) Preparation of substrate film A substrate film 3 having a thickness of 80 μm was prepared using HIMILAN MM-7316 (trade name, manufactured by DuPont Mitsui Chemicals Co., Ltd.), which is an ethylene-methacrylic acid-(2-methyl-propyl acrylate) terpolymer-Zn ^{2 +} -ion polymer resin. Furthermore, a corona treatment was performed on one side of the film.

(2) Preparation of adhesive The adhesive used was the following adhesive containing a UV-curable acrylic polymer having a UV-curable carbon-carbon double bond in the side chain as a base polymer. (Synthesis of (meth)acrylic copolymer A) 70 mol% of 2-ethylhexyl acrylate, 20 mol% of 2-hydroxyethyl acrylate and 10 mol% of methyl methacrylate were mixed at the molar ratio described above and copolymerized in an ethyl acetate solution to obtain a polymer solution of a (meth)acrylic copolymer. 10 parts by mass of 2-methacryloyloxyethyl isocyanate (KARENZ MOI (trade name) manufactured by Showa Denko Co., Ltd.) was added to the polymer solution relative to 100 parts by mass of the (meth)acrylic copolymer to react so that the double bond-containing group derived from the above isocyanate was added to the hydroxyl group of the side chain of the (meth)acrylic copolymer, thereby obtaining a composition of (meth)acrylic copolymer A having a double bond-containing group in the side chain. The mass average molecular weight of the acrylic copolymer A having a double bond-containing group in the side chain was 600,000, the glass transition temperature (Tg) was -64°C, and the UV-curable carbon-carbon double bond content was 0.9 meq/g. (Preparation of adhesive) Into the composition of the (meth)acrylic acid copolymer A, 2.0 parts by weight of CORONATE L (manufactured by Nippon Polyurethane Industry Co., Ltd., trade name, isocyanate-based hardener) as a hardener and 0.1 parts by weight of IRGACURE 184 (manufactured by BASF, trade name) as a photopolymerization initiator were blended relative to 100 parts by weight of the (meth)acrylic acid copolymer A to obtain an adhesive A.

(3) Preparation of adhesive tape The adhesive A is applied to a peeling pad in a manner to have a thickness of 10 μm after drying to form an adhesive layer 4. The formed adhesive layer 4 is attached to the surface of the substrate film 3 having a thickness of 80 μm prepared above, which has been subjected to the corona treatment, to prepare a UV-curable adhesive tape (adhesive tape) 2 for semiconductor wafer processing having a total thickness of 90 μm.

[Example 2] In the adhesive A used in Example 1, the blending amount of IRGACURE 184 (manufactured by BASF) as a photopolymerization initiator was changed from 0.1 parts by mass to 0.75 parts by mass to obtain adhesive B. Adhesive tape 2 was prepared in the same manner as in Example 1 except that adhesive B was used instead of adhesive A.

[Example 3] In the adhesive A used in Example 1, the blending amount of IRGACURE 184 (manufactured by BASF) as a photopolymerization initiator was changed from 0.1 parts by mass to 1.0 parts by mass to obtain an adhesive C. An adhesive tape 2 was prepared in the same manner as in Example 1 except that adhesive C was used instead of adhesive A.

[Example 4] In the adhesive A used in Example 1, the blending amount of IRGACURE 184 (manufactured by BASF) as a photopolymerization initiator was changed from 0.1 mass parts to 0.5 mass parts, and 0.3 mass parts of LA-F70 (manufactured by ADEKA Co., Ltd., trade name) as a UV absorber was blended to obtain adhesive D. Adhesive tape 2 was prepared in the same manner as in Example 1 except that adhesive D was used instead of adhesive A.

[Example 5] In the adhesive A used in Example 1, IRGACURE 184 (manufactured by BASF) as a photopolymerization initiator was replaced with IRGACURE 651 (manufactured by BASF, trade name), and the blending amount was changed from 0.1 mass parts to 0.3 mass parts, and 0.3 mass parts of LA-F70 (manufactured by ADEKA Co., Ltd., trade name) as a UV absorber was blended to obtain adhesive E. Adhesive tape 2 was prepared in the same manner as in Example 1 except that adhesive E was used instead of adhesive A.

[Comparative Example 1] In the adhesive A used in Example 1, the blending amount of IRGACURE 184 (manufactured by BASF) as a photopolymerization initiator was changed from 0.1 parts by mass to 5.0 parts by mass to obtain adhesive F. An adhesive tape was prepared in the same manner as in Example 1 except that adhesive F was used instead of adhesive A.

[Comparative Example 2] In the adhesive A used in Example 1, IRGACURE 184 (manufactured by BASF) as a photopolymerization initiator was replaced with IRGACURE 651 (manufactured by BASF), and the blending amount was changed from 0.1 parts by mass to 4.0 parts by mass, to obtain adhesive G. An adhesive tape was prepared in the same manner as in Example 1 except that adhesive G was used instead of adhesive A.

[Comparative Example 3] In the adhesive A used in Example 1, IRGACURE 184 (manufactured by BASF) as a photopolymerization initiator was replaced with IRGACURE 651 (manufactured by BASF), and the blending amount was changed from 0.1 parts by mass to 3.1 parts by mass, and 0.1 parts by mass of LA-F70 (manufactured by ADEKA Co., Ltd.) as a UV absorber was blended to obtain adhesive H. An adhesive tape was prepared in the same manner as in Example 1 except that adhesive H was used instead of adhesive A.

[Characteristics and performance evaluation] The adhesive force of the adhesive tape produced above was measured as in Test Example 1. Also, the chip scattering during dicing was evaluated as in Test Example 2, and the pick-up performance after chip singulation was evaluated as in Test Example 3.

[Test Example 1] Determination of Adhesion The adhesion in the present invention is a value measured by the 90° peel adhesion test method for stainless steel test plates based on JIS Z 0237. The specific measurement method is as follows. Furthermore, the conditions not described below are based on JIS Z 0237. First, three test pieces with a width of 25 mm and a length of 150 mm are taken from the adhesive tape. The test pieces are attached to a SUS304 steel plate (stainless steel test plate) with a thickness of 1.5 mm to 2.0 mm specified in JIS G 4305 after being polished with No. 280 water-resistant abrasive paper specified in JIS R 6253. Thereafter, a 2 kg rubber roller is pressed back and forth 3 times and left for 1 hour. Afterwards, the adhesion is measured using a tensile tester that complies with JIS B 7721 within the range of 15 to 85% of its capacity. The measurement is performed by the 90° peeling method at a tensile speed of 50 mm/min, a measuring temperature of 23°C, and a relative humidity of 49%. The adhesion of the present invention is the arithmetic average of the adhesion of three test pieces measured by the above method.

(Test Example 1-1) Adhesion before UV irradiation For the adhesive tape prepared as described above, the adhesion before UV irradiation (A ₀ ) was measured by the above method.

(Test Example 1-2) Adhesion after irradiation with ultraviolet light using a 365 nm LED lamp as a light source The adhesive tape prepared above was irradiated with an ultraviolet light irradiation device using a 365 nm LED lamp as a light source (manufactured by AITEC SYSTEM, trade name: MUVBA-0.4×0.6×0.2, peak wavelength: 365 nm) at an irradiation intensity of 30 mW/cm ² and a cumulative light quantity of 500 mJ/cm ^2. After irradiation with ultraviolet light, the adhesive tape was left for 1 hour and the adhesion after irradiation with ultraviolet light using a 365 nm LED lamp as a light source was measured using the above method (A _LED ).

(Test Example 1-3) Adhesion after irradiation with ultraviolet light using a high-pressure mercury lamp as a light source The adhesive tape prepared above was irradiated with an ultraviolet irradiation device using a high-pressure mercury lamp as a light source (manufactured by TECHNOVISION, trade name: UVC-408) at an irradiation intensity of 70 mW/ ^cm2 and a cumulative light amount of ultraviolet light (wavelength 250 nm to 450 nm) of 500 mJ/ ^cm2 . After irradiation with ultraviolet light, the adhesive tape was left for 1 hour, and the adhesion after irradiation with ultraviolet light using a high-pressure mercury lamp as a light source (A _HPM ) was measured using the above method.

[Test Example 2] Chip scattering during cutting For an 8-inch mirror wafer with a thickness of 150 μm and a #2000 polish, the adhesive tape prepared above was attached at 23°C and 50% RH. One hour after the tape was attached, ultraviolet light was irradiated under the same conditions as in Test Example 1-2. After ultraviolet light irradiation, it was left for one hour and then cut according to the following cutting conditions to obtain 1238 chips of 5 mm×5 mm. [Cutting conditions] Cutting device: DFD-6340 (trade name) manufactured by DISCO Blade: NBC-ZH2050 27HEDD (trade name) manufactured by DISCO Blade rotation speed: 40,000 rpm Cutting speed: 80 mm/sec Deepness of cutting into the tape: 0.07 mm Cutting lines: 41 cutting lines with a length of 205 mm in both vertical and horizontal directions Cutting water flow rate: 2 L/min Cutting water temperature: 23°C Visually observe the chips singulated by the above-mentioned cutting. If there is no scattering of the singulated chips, it is evaluated as "0", and if there is scattering of the chips, it is evaluated as "×".

[Test Example 3] Picking performance After cutting in Test Example 2, the self-adhesive tape side was irradiated with ultraviolet light under the same conditions as in Test Examples 1-3. Thereafter, the singulated chips were picked up under the following picking conditions. [Pickup conditions] Pickup device: CAP-300II (trade name) manufactured by Canon Machinery Co., Ltd. Ejector shape: radius 0.7 mm, tip curvature radius R = 0.25 mm, tip angle 15° Ejector height: 1 mm Ejector speed: 50 mm/sec Clip shape: suction hole 0.89 mmϕ Ring frame: Model DTF-2-6-1 (trade name) manufactured by DISCO, made of SUS420J2 1238 singulated chips were picked up under the above conditions. Those that could be peeled off were evaluated as "0", those that could not be peeled off and 1 to 25 chips remained on the adhesive tape were evaluated as "△", and those that could not be peeled off and more than 26 chips remained on the adhesive tape were evaluated as "×". In this test, "△" or "0" is a qualified grade. Furthermore, when the scattering of chips was found in the above test example 2, the above pick-up performance was evaluated for the chips that did not scatter but remained on the tape.

The results of the above test cases are summarized and shown in the table below. In addition, the unit of each adhesion force in the table is "N/25 mm".

[Table 1] Embodiment 1 Embodiment 2 Embodiment 3 Embodiment 4 Embodiment 5 Adhesive A B C D E Adhesion before UV irradiation (A ₀ ) 2.00 1.87 1.94 1.72 1.35 Adhesion after UV irradiation (A _LED ) 2.20 1.37 0.98 2.14 1.44 Adhesion after UV irradiation (A _HPM ) 0.40 0.31 0.27 0.22 0.58 Ratio of adhesion before and after UV irradiation A _LED /A ₀ 1.10 0.73 0.51 1.24 1.07 A _HPM /A ₀ 0.20 0.17 0.14 0.13 0.43 Chip scattering during cutting ○ ○ ○ ○ ○ Pickup ○ ○ ○ ○ △

[Table 1-2] Comparison Example 1 Comparison Example 2 Comparison Example 3 Adhesive F G H Adhesion before UV irradiation (A ₀ ) 2.40 1.32 1.66 Adhesion after UV irradiation (A _LED ) 0.25 0.43 1.21 Adhesion after UV irradiation (A _HPM ) 0.30 0.49 0.95 Before and after UV exposure A _LED /A ₀ 0.10 0.33 0.73 Adhesion force ratio A _HPM /A ₀ 0.13 0.37 0.57 Chip scattering during cutting × × ○ Pickup ○ △ ×

The following can be seen from the results in Table 1. The adhesive tapes of Examples 1 to 5 satisfy the requirements of the present invention that (1) the ratio of [adhesion after irradiation with ultraviolet light of 500 mJ/ ^cm2 using an ultraviolet irradiation device with a wavelength of 365 nm LED lamp as a light source] to [adhesion before irradiation] (A _LED /A ₀ ) is 0.50 or more, and (2) the ratio of [adhesion after irradiation with ultraviolet light of 500 mJ/ ^cm2 using an ultraviolet irradiation device with a high-pressure mercury lamp as a light source] to [adhesion before irradiation] (A _HPM /A ₀ ) is 0.50 or less. It can be seen that when the ultraviolet irradiation type adhesive tapes of Examples 1 to 5 are used by being attached to one side of a semiconductor wafer, even if the wafer is cut after being irradiated with ultraviolet light using an LED lamp with a wavelength of 365 nm as a light source, the wafer can be prevented from flying during cutting. Furthermore, it can be seen that after the above-mentioned cutting, the wafer is irradiated with ultraviolet light using a high-pressure mercury lamp as a light source and then picked up, thereby better peeling the wafer from the ultraviolet irradiation type adhesive tape. That is, it can be seen that the ultraviolet irradiation type adhesive tapes of Examples 1 to 5 have both excellent wafer scattering suppression and pick-up properties. With respect to Examples 1 to 5, it can be seen that: when the adhesive tape of Example 5 in which the ratio of [adhesion after ultraviolet irradiation with a cumulative light amount of 500 mJ/ ^cm2 using an ultraviolet irradiation device using a high-pressure mercury lamp as a light source] to [adhesion before ultraviolet irradiation] (A _HPM /A ₀ ) was 0.43 was used, 12 chips remained on the adhesive tape during the picking-up step. In contrast, when the adhesive tapes of Examples 1 to 4 in which the ratio (A _HPM /A ₀ ) was less than 0.40 was used, no chips remained on the adhesive tape during the picking-up step, and the picking-up property was more excellent.

In contrast, although the adhesive tape of Comparative Example 1 meets (2) specified in the present invention, the ratio of [adhesion after ultraviolet irradiation with a cumulative light quantity of 500 mJ/ ^cm2 using an ultraviolet irradiation device with a wavelength of 365 nm LED lamp as a light source] to [adhesion before ultraviolet irradiation] (A _LED /A ₀ ) is 0.10, which does not meet the requirement of 0.50 or more specified in the present invention. With respect to the adhesive tape of Comparative Example 1, it is observed that the wafers are scattered due to dicing after being irradiated with ultraviolet light using a wavelength of 365 nm LED lamp as a light source, and the suppression of wafer scattering is insufficient. Although the adhesive tape of Comparative Example 2 meets (2) specified in the present invention, the ratio of [adhesion after ultraviolet irradiation with a cumulative light quantity of 500 mJ/ ^cm2 using an ultraviolet irradiation device with a wavelength of 365 nm LED lamp as a light source] to [adhesion before ultraviolet irradiation] (A _LED /A ₀ ) is 0.33, which does not meet the requirement of 0.50 or more specified in the present invention. Regarding the adhesive tape of Comparative Example 2, it was observed that the chips were scattered due to cutting after ultraviolet irradiation using a wavelength of 365 nm LED lamp as a light source, and the chip scattering was not sufficiently suppressed. Furthermore, 4 chips were left on the adhesive tape during the picking step. Although the adhesive tape of Comparative Example 3 meets (1) specified in the present invention, (2) the ratio of [adhesion after irradiation with ultraviolet light of 500 mJ/ ^cm2 using an ultraviolet irradiation device with a high-pressure mercury lamp as the light source] to [adhesion before irradiation with ultraviolet light] (A _HPM /A ₀ ) is 0.57, which does not meet the requirement of 0.50 or less specified in the present invention. The adhesive tape of Comparative Example 3 was cut after irradiation with ultraviolet light using an LED lamp as the light source, and then irradiated with ultraviolet light using a high-pressure mercury lamp as the light source. When picking up, all 1238 chips remained on the adhesive tape, and the picking performance was insufficient.

As described above, the adhesive tape of the present invention can be preferably used for processing semiconductor wafers. In addition, the adhesive tape of the present invention and the UV-curable surface protection tape are respectively attached to the semiconductor wafer, and the UV-curable surface protection tape is cured by using ultraviolet light with a wavelength of 365 nm LED lamp as a light source. The method of using the adhesive tape of the present invention can suppress the decrease in the adhesive force of the adhesive tape of the present invention and peel off the UV-curable surface protection tape. In addition, by using the adhesive tape of the present invention, it is possible to simultaneously achieve the suppression of chip scattering and excellent pickup performance, and manufacture semiconductor chips.

Although the present invention and its embodiments have been described, it is considered that the inventors do not intend to limit the invention of the present invention to any details of the description unless otherwise specified, and the invention should be broadly interpreted without departing from the spirit and scope of the invention disclosed in the attached patent claims.

This application claims priority based on Japanese patent application No. 2019-011418 filed in Japan on January 25, 2019, the entire contents of which are incorporated herein as a part of the description of this specification by reference.

1: Semiconductor wafer 1A: Semiconductor wafer in back grinding process 1B: Semiconductor wafer in back grinding state 1C: Semiconductor wafer after segmentation 2: UV-curable adhesive tape for semiconductor wafer processing (adhesive tape) 3: Base film 4: Adhesive layer 7: Chip 11: Surface protection tape 12: Base film 13: Adhesive layer B: Back D: Cutting blade F: Ring frame M1: Wafer grinding device S: Front UVS1: Ultraviolet irradiation device using LED lamp with wavelength of 365 nm as light source UVS2: Ultraviolet irradiation device using high-pressure mercury lamp as light source

[Figure 1] is a schematic cross-sectional view illustrating the step of attaching a surface protection tape to a semiconductor wafer. In Figure 1, sub-Figure 1 (A) shows the surface protection tape being attached to the surface of a semiconductor wafer, and sub-Figure 1 (B) shows the semiconductor wafer to which the surface protection tape is attached. [Figure 2] is a schematic cross-sectional view illustrating the steps up to thin-filming and fixing of a semiconductor wafer. In Figure 2, sub-Figure 2 (A) shows the thin-filming treatment of a semiconductor wafer by back grinding, sub-Figure 2 (B) shows the condition of attaching the ultraviolet curing adhesive tape for semiconductor wafer processing of the present invention to the thin-filmed semiconductor wafer, and sub-Figure 2 (C) shows the state of fixing the semiconductor wafer to a ring frame. [Figure 3] is a schematic cross-sectional view illustrating the steps of irradiating the surface protection tape with ultraviolet light using the first ultraviolet irradiation device using an LED lamp as a light source and peeling off the surface protection tape. In Figure 3, sub-Figure 3 (A) shows a state where the surface protection tape is bonded to the front side of the semiconductor wafer and the ultraviolet curing adhesive tape for semiconductor wafer processing of the present invention is bonded to the back side of the semiconductor wafer, sub-Figure 3 (B) shows the state where the side to which the surface protection tape is bonded is irradiated with ultraviolet light using an LED lamp as a light source, and sub-Figure 3 (C) shows the state where the surface protection tape is peeled off. [Fig. 4] is a schematic cross-sectional view illustrating the steps of ultraviolet irradiation and cutting of the ultraviolet curing adhesive tape for semiconductor wafer processing of the present invention by using a second ultraviolet irradiation device using a high-pressure mercury lamp as a light source. In Fig. 4, sub-Fig. 4 (A) shows the state after the surface protection tape is peeled off from the semiconductor wafer, sub-Fig. 4 (B) shows the step of singulating the wafer into individual chips by a dicing blade, and sub-Fig. 4 (C) shows the situation of irradiating ultraviolet rays from the surface side of the ultraviolet curing adhesive tape for semiconductor wafer processing of the present invention attached thereto by using a second ultraviolet irradiation device using a high-pressure mercury lamp as a light source.

1B: Semiconductor wafer with the back side ground

2: UV-curable adhesive tape for semiconductor wafer processing (adhesive tape)

11: Surface protection tape

F: Ring frame

UVS1: Ultraviolet irradiation device using LED lamp with wavelength of 365nm as light source

Claims (13)

A UV-curable adhesive tape for semiconductor wafer processing, which at least comprises a substrate film and a UV-curable adhesive layer disposed on the substrate film, wherein the adhesive layer comprises a base polymer component and a photopolymerization initiator, wherein the content of the photopolymerization initiator is 0.1 to 3.0 parts by weight relative to 100 parts by weight of the base polymer component, wherein the base polymer component has a UV-polymerizable carbon-carbon double bond in the side chain, wherein the amount of the UV-polymerizable carbon-carbon double bond introduced into the base polymer component is 0.8 to 1.8 meq/g, and wherein the UV-polymerizable carbon-carbon double bond is 0.8 to 1.8 meq/g. The adhesive force of the above adhesive tape measured by the 90° peel test method of 0237 for SUS304 satisfies the following (1) and (2) at the same time: (1) [Adhesion after ultraviolet irradiation with a cumulative light quantity of 500mJ/ ^cm2 using an ultraviolet irradiation device with a wavelength of 365nm LED lamp as the light source]/[Adhesion before ultraviolet irradiation] ≧0.50 (2) [Adhesion after ultraviolet irradiation with a cumulative light quantity of 500mJ/ ^cm2 using an ultraviolet irradiation device with a high-pressure mercury lamp as the light source]/[Adhesion before ultraviolet irradiation] ≦0.50. For example, the UV-curable adhesive tape for semiconductor wafer processing in claim 1, wherein the above-mentioned [adhesion before UV irradiation] is 1N/25mm~10N/25mm. As in claim 1 or 2, the UV-curable adhesive tape for semiconductor wafer processing, wherein the adhesive layer contains a UV absorber. Such as the UV-curable adhesive tape for semiconductor wafer processing in claim 1 or 2, which is used in the step of cutting semiconductor wafers. A method for manufacturing a semiconductor chip, comprising the following steps (a) to (e): [Step] (a) grinding the back side of a semiconductor wafer having a patterned surface on the front side while a UV-curable surface protection tape is attached to the patterned surface of the semiconductor wafer; (b) attaching a UV-curable adhesive tape for semiconductor wafer processing of any one of claim items 1 to 4 to the back side of the ground semiconductor wafer , supporting and fixing it on a ring frame; (c) peeling off the surface protection tape after irradiating it with ultraviolet rays from the surface protection tape side by a first ultraviolet irradiation device; (d) using a cutting device to cut the semiconductor wafer from the pattern side of the semiconductor wafer to singulate it into individual chip units; and, (e) irradiating it with ultraviolet rays from the adhesive tape side by a second ultraviolet irradiation device. The method for manufacturing a semiconductor chip as claimed in claim 5, wherein the first ultraviolet irradiation device is an ultraviolet irradiation device using an LED lamp with a wavelength of 365nm as a light source. A method for manufacturing a semiconductor chip as claimed in claim 5 or 6, wherein the second ultraviolet irradiation device is an ultraviolet irradiation device using a high-pressure mercury lamp as a light source. A method for using a UV-curable adhesive tape for semiconductor wafer processing, comprising the following steps: irradiating a semiconductor wafer having a UV-curable surface protection tape attached to one side of the semiconductor wafer and a UV-curable adhesive tape for semiconductor wafer processing of any one of claims 1 to 4 attached to the other side of the semiconductor wafer with UV rays from the side of the UV-curable surface protection tape. As in claim 8, the method for using a UV-curable adhesive tape for semiconductor wafer processing, wherein the UV irradiation is performed by a UV irradiation device using a 365nm wavelength LED lamp as a light source. The method for using the UV-curing adhesive tape for semiconductor wafer processing as claimed in claim 8 or 9 includes the step of peeling off the UV-curing surface protection tape after the UV irradiation from the semiconductor wafer. The method for using the ultraviolet curing adhesive tape for semiconductor wafer processing as claimed in claim 10 includes the step of peeling off the ultraviolet curing surface protection tape from the semiconductor wafer and then irradiating ultraviolet light from the side of the ultraviolet curing adhesive tape for semiconductor wafer processing. The method for using the ultraviolet curing adhesive tape for semiconductor wafer processing as claimed in claim 11, wherein the ultraviolet irradiation from the side of the ultraviolet curing adhesive tape for semiconductor wafer processing is performed by an ultraviolet irradiation device using a high-pressure mercury lamp as a light source. A method for using a UV-curable adhesive tape for semiconductor wafer processing as claimed in claim 8 or 9, wherein the semiconductor wafer having a UV-curable surface protection tape attached to one side of the semiconductor wafer and a UV-curable adhesive tape for semiconductor wafer processing as claimed in any one of claims 1 to 4 attached to the other side of the semiconductor wafer is produced during a semiconductor wafer processing step.