有鑑於此，本發明提供一種磊晶薄膜與其製造方法，透過不同材料的基材與磊晶材料進行磊晶，在同一磊晶薄膜上形成不同應力狀態的區域。其具體技術手段如下：
一種具有多種應力狀態之磊晶薄膜的製造方法，包括：提供一第一單晶基板，並於該第一單晶基板上形成一犧牲層與一第一磊晶薄膜，該第一磊晶薄膜由一第一材料製成。移除該犧牲層，使該第一單晶基板與該第一磊晶薄膜分離。轉移該第一磊晶薄膜至一第二單晶基板，該第二單晶基板由一第二材料製成，該第一磊晶薄膜覆蓋該第二單晶基板的部分表面。對該第一磊晶薄膜與該第二單晶基板實施磊晶，在該第一磊晶薄膜與該第二單晶基板上方形成一第二磊晶薄膜，該第二磊晶薄膜為一第三材料製成。其中，該第一材料、該第二材料與該第三材料彼此不相同。
於上述的具有多種應力狀態之磊晶薄膜的製造方法中，重複形成第一磊晶薄膜，取得多個該第一磊晶薄膜，並將這些第一磊晶薄膜轉移至該第二單晶基板的不同區域。
於上述的具有多種應力狀態之磊晶薄膜的製造方法中，該第一材料與該第二材料分別選自鈦酸鍶、鋁酸鑭、鎵酸釹、氧化鋁與單晶矽所組成的群組。
於上述的具有多種應力狀態之磊晶薄膜的製造方法中，該第三材料為鐵酸鉍。
於上述的具有多種應力狀態之磊晶薄膜的製造方法中，是將該第一單晶基板、該犧牲層與該第一磊晶薄膜浸泡至一蝕刻液體中，以移除該犧牲層。
於上述的具有多種應力狀態之磊晶薄膜的製造方法中，該犧牲層為鑭鍶錳氧材質。
於上述的具有多種應力狀態之磊晶薄膜的製造方法中，該第一磊晶薄膜的厚度介於 0.4 nm-200 nm之間。
於上述的具有多種應力狀態之磊晶薄膜的製造方法中，是經由脈衝雷射沉積技術、金屬有機化學氣相沉積、分子束磊晶、液相磊晶、氣相磊晶、濺鍍或選擇性磊晶成長在該第一單晶基板上形成該犧牲層與該第一磊晶薄膜。
於上述的具有多種應力狀態之磊晶薄膜的製造方法中，是經由脈衝雷射沉積在該第一磊晶薄膜與該第二單晶基板上方形該第二磊晶薄膜。
In view of this, the present invention provides an epitaxial film and a method for manufacturing the same, which forms regions with different stress states on the same epitaxial film by epitaxy through substrates and epitaxial materials of different materials. The specific technical means are as follows:
A method for manufacturing an epitaxial film with multiple stress states, comprising: providing a first single crystal substrate, and forming a sacrificial layer and a first epitaxial film on the first single crystal substrate, the first epitaxial film being made of a first material. Removing the sacrificial layer to separate the first single crystal substrate from the first epitaxial film. Transferring the first epitaxial film to a second single crystal substrate, the second single crystal substrate being made of a second material, the first epitaxial film covering a portion of the surface of the second single crystal substrate. The first epitaxial film and the second single crystal substrate are subjected to epitaxy, and a second epitaxial film is formed on the first epitaxial film and the second single crystal substrate, and the second epitaxial film is made of a third material. The first material, the second material and the third material are different from each other.
In the above-mentioned method for manufacturing an epitaxial film with multiple stress states, the first epitaxial film is repeatedly formed to obtain multiple first epitaxial films, and these first epitaxial films are transferred to different areas of the second single crystal substrate.
In the above-mentioned method for manufacturing an epitaxial film with multiple stress states, the first material and the second material are respectively selected from the group consisting of strontium titanate, vanadium aluminate, neodymium gallate, aluminum oxide and single crystal silicon.
In the above-mentioned method for manufacturing an epitaxial film with multiple stress states, the third material is bismuth ferrite.
In the above-mentioned method for manufacturing an epitaxial film with multiple stress states, the first single crystal substrate, the sacrificial layer and the first epitaxial film are immersed in an etching liquid to remove the sacrificial layer.
In the above-mentioned method for manufacturing an epitaxial film with multiple stress states, the sacrificial layer is a material of strontium manganese oxide.
In the above-mentioned method for manufacturing an epitaxial film with multiple stress states, the thickness of the first epitaxial film is between 0.4 nm and 200 nm.
In the above-mentioned method for manufacturing an epitaxial film with multiple stress states, the sacrificial layer and the first epitaxial film are formed on the first single crystal substrate by pulsed laser deposition technology, metal organic chemical vapor deposition, molecular beam epitaxy, liquid phase epitaxy, vapor phase epitaxy, sputtering or selective epitaxial growth.
In the above-mentioned method for manufacturing an epitaxial film with multiple stress states, the second epitaxial film is formed on the first epitaxial film and the second single crystal substrate by pulsed laser deposition.
參照本文闡述的詳細內容和附圖說明是最好理解本發明。下面參照附圖會討論各種實施例。然而，本領域技術人員將容易理解，這裡關於附圖給出的詳細描述僅僅是為了解釋的目的，因為這些方法和系統可超出所描述的實施例。例如，所給出的教導和特定應用的需求可能產生多種可選的和合適的方法來實現在此描述的任何細節的功能。因此，任何方法可延伸超出所描述的以下實施例中的特定實施選擇範圍。
請參閱圖1，圖1所繪示為本發明磊晶薄膜100其中一實施例的示意圖。本發明之磊晶薄膜100是一種具有多種應力狀態的磊晶薄膜100，並且是由磊晶製成。磊晶薄膜100包括一第二單晶基板103與第二磊晶薄膜120，第二磊晶薄膜120是經由磊晶而在第二單晶基板103上形成。其中，第二磊晶薄膜120還包括一第一磊晶區120a與一第二磊晶區120b，第一磊晶區120a與第二磊晶區120b具有不同的應力狀態（stress state）或應變狀態（strain state）。學理上，應變是由應力所生成，因此不同的應力狀態就是對應到不同的應變狀態。在半導體科學中，材料的應力狀態將可用於控制接面（junction）電位與隙帶系統（bandgap system），因此本發明之磊晶薄膜100具備不同的應力狀態，將更有利於控制半導體中的接面電位與隙帶系統。以下，將說明本發明多種應力狀態之磊晶薄膜100的製造方法。
請參閱圖2與圖3A至圖3D，圖2所繪示為多種應力狀態之磊晶薄膜100製造流程圖，圖3A至圖3D所繪示為多種應力狀態之磊晶薄膜100製造方法的實施例。需特別注意的是，圖3A至圖3D僅為示例，並非按真實比例繪製。首先，請先參閱圖3A，進行步驟S10，提供一第一單晶基板101，並且於第一單晶基板101上形成一犧牲層102與一第一磊晶薄膜110，進一步的說，是先形成犧牲層102後，在犧牲層102上再形成第一磊晶薄膜110。其中，第一單晶基板101為第一材料製成，並經由磊晶而形成第一材料製成的第一磊晶薄膜110，第一磊晶薄膜110的厚度例如是介於0.4 nm-200 nm之間，而犧牲層102例如為鑭鍶錳氧（LSMO）材質。在本實施例中，第一材料選用鈦酸鍶（Strontium titanate，簡稱STO）。當然，本領域具有通常知識者也可選擇其他材料與磊晶技術，例如第一材料可選自由自鈦酸鍶（STO）、鋁酸鑭（Lanthanum aluminate ，簡稱LAO）、鎵酸釹（NdGaO
3，簡稱NGO）與單晶矽所組成的群組。犧牲層102的材質可以是選自由鑭鍶錳氧（Lanthanum strontium manganite，簡稱LSMO）、Sr
3Al
2O
6、釔鋇銅氧（Yttrium barium copper oxide，簡稱YBCO）、釕酸鍶（化學式SrRuO
3）所組成的群組。
接著，請參閱圖3B，進行步驟S20，移除犧牲層102，使第一磊晶薄膜110與第一單晶基板101分離。在本實施例中，是將第一磊晶薄膜110、犧牲層102與第一單晶基板101浸泡至蝕刻液體中，犧牲層102會收到蝕刻液體侵蝕而被移除。第一磊晶薄膜110與第一單晶基板101分離後，將第一磊晶薄膜110取出。
然後，請參閱圖3C，執行步驟S30，將第一磊晶薄膜110轉移到一第二單晶基板103上，並且使第一磊晶薄膜110覆蓋第二單晶基板103的部分表面。其中，第二單晶基板103是由第二材料製成，第二材料例如選用鋁酸鑭（LAO）。需特別注意的是，第一材料與第二材料必須為不同的材料，舉例來說，若第一材料選用了鋁酸鑭（LAO），第二材料就須選用鋁酸鑭（LAO）以外的材料。即是第一磊晶薄膜110與第二單晶基板103會是由不同的材料製成，並且第一磊晶薄膜110與第二單晶基板103將具有不同的晶格常數。
根據應力需求，第二材料可選自鈦酸鍶（STO）、鋁酸鑭（LAO）、鎵酸釹（NGO）、氧化鋁與單晶矽所組成的群組。在本實施例中，第一磊晶薄膜110為鈦酸鍶 （STO），第二單晶基板103則為鋁酸鑭（LAO）。
接下來請參閱圖3D，執行步驟S40，對第一磊晶薄膜110與第二單晶基板103實施磊晶，以在第一磊晶薄膜110與第二單晶基板103上形成一第二磊晶薄膜120，第二磊晶薄膜120將由第三材料製成。在本實施例中，第三材料是選用鐵酸鉍（BFO），在其他實施例中亦可選用鐵酸鉍以外的材料。此時，第二磊晶薄膜120分別會在第一磊晶薄膜110與第二單晶基板103上方形成第一磊晶區120a與第二磊晶區120b，由於第一磊晶區120a與第二磊晶區120b中的第二磊晶薄膜120是基於不同晶格常數的材料磊晶形成，即是基於第一磊晶薄膜110（STO）與第二單晶基板103（LAO）磊晶形成，因此即便在第一磊晶區120a與第二磊晶區120b中的第二磊晶薄膜120是相同材質，也會產生不同的應變狀態。也就是說，第二磊晶薄膜120在第一磊晶薄膜110上方的應力狀態是不同於第二磊晶薄膜120在第二單晶基板103上方的應力狀態。
在步驟S10與步驟S40中，磊晶方法選用脈衝雷射沉積技術（Pulsed laser deposition）形成第一磊晶薄膜110、犧牲層102或第二磊晶薄膜120。在其他實施例中，磊晶技術還可選用金屬有機化學氣相沉積（metal-organic chemical vapor deposition；MOCVD）、分子束磊晶（molecular beam epitaxy；MBE）、液相磊晶（liquid phase epitaxy；LPE）、氣相磊晶（vapor phase epitaxy；VPE）、濺鍍或選擇性磊晶成長（selective epitaxial growth；SEG）等。
因此，經由步驟S10~S40，即可製作出具有不同應力狀態的磊晶薄膜100。進一步可利用各個磊晶區之間的應力狀態差異來控制接面電位隙帶系統。
接著請參閱圖2、圖4A與圖4B，圖4A與圖4B所繪示為另一實施例的磊晶薄膜200。並且，圖4B所繪示為圖4A中虛線A-A的截面圖。在一實施例中，可透過反覆進行步驟S10與S20，從而取得多個第一磊晶薄膜210，在反覆進行步驟S10與步驟S20可採用不同或相同的第一材料來形成第一磊晶薄膜210。舉例來說，反覆四次步驟S10至S20，取得四個第一磊晶薄膜210，所採用的第一材料可分別為鈦酸鍶 （STO）、鈦酸鍶 （STO）、鋁酸鑭（LAO）與鎵酸釹（NGO）。
接著在步驟S30中，將這些第一磊晶薄膜210轉移到第二單晶基板203上的不同區域，並覆蓋第二單晶基板103的部分面積。隨後進行步驟S40，對這些第一磊晶薄膜110與第二單晶基板203進行磊晶，以形成第二磊晶薄膜220，便得到圖4A與圖4B的磊晶薄膜200。
在圖4A與圖4B的實施例中，第二磊晶薄膜220上還包括多個磊晶區220a~220e。多個磊晶區220a~220e是基於不同的第一磊晶薄膜210磊晶而形成。例如在圖4B中，磊晶區220b是基於第一磊晶薄膜210形成，磊晶區220c則是基於第一磊晶薄膜210’形成，第一磊晶薄膜210的材質不同於第一磊晶薄膜210’，即便磊晶區220b與磊晶區220c中同為第二磊晶薄膜220，也將具備不同的應力狀態。因此這些磊晶區220a~220e中的第二磊晶薄膜220將具備不同的應力狀態。也就是說，透過設置多個第一磊晶薄膜210，並使用不同或相同的材料組合，即可在形成第二磊晶薄膜220時，產生更多不同應力狀態的磊晶區。
此外，在前述實施例中，是透過方形的第二磊晶薄膜110、210整齊分布在第二單晶基板103、203上，從而形成方形且整齊排列的磊晶區120b、220b~220d。但不限於此，第二磊晶薄膜的形狀可為其他形狀，且多個第二磊晶薄膜的排列方式也可為不規則排列。
請參閱圖5A，圖5A所繪示為本發明磊晶薄膜100的穿透電子顯微鏡影像。在圖5A中，是選用LAO作第二單晶基板，選用STO作為第一磊晶薄膜，選用BFO作為第二磊晶薄膜。從圖5A第二單晶基板(LAO)、第一磊晶薄膜(FS-STO)與第二磊晶薄膜(BFO(AG site))的影像中可以看出，其晶格排列有明顯區分。
第二單晶基板上方的第一磊晶區可稱為T-phase，T-phase磊晶區中的晶格排列明顯受到第二單晶基板的影響，產生了類似的晶格排列。而第一磊晶薄膜上方的第二磊晶區則可稱為R-phase，R-phase磊晶區中的晶格排列則是明顯受到第一磊晶薄膜，產生了類似的晶格排列。因此可得知，僅需要僅透過較薄的第一磊晶薄膜，便能夠影響上方磊晶後之產生的薄膜的晶格排列。由於T-phase與R-phase的晶格排列不相同，從而在同一基板（即第二單晶基板）上形成了具有不同晶格排列的區域，這些區域便提供了不同的應力狀態，便可利用這些具有不同應力狀態的區塊來控制半導體中的接面電位與隙帶系統。例如，透過不同材質的第一磊晶薄膜在同一個第二單晶基板上來形成各種不同應力狀態的區塊，以建立所需要的帶隙系統。
接著請參閱圖5B至圖5D，圖5B所繪示為第二單晶基板的繞射圖案，圖5C所繪示為第一磊晶區的繞射圖案。圖5D所繪示為第二磊晶區的繞射圖案。從圖5B至圖5D中可以看出，第二磊晶基板、T-phase與R-phase中的繞射圖案並不相同，即表示具備了不同的應力狀態。
此外，在圖5A的實施例中，第一磊晶薄膜的厚度約為5~7nm，然而發明人經過計算發現，即使厚度小於2nm的第一磊晶薄膜也可改變上方磊晶薄膜的晶格排列。請參閱圖6，圖6所繪示為結合能(binding energy)與夾層距離(Interlayer distance)的關係圖，圖6分別繪示了同質接合(STO-STO)的凡得瓦鍵(Van der Waals bonding)、異質接合(STO-BFO)的離子鍵(Ionic bonding)與凡得瓦鍵。而從圖中則可看出的，異質接合(STO-BFO)的離子鍵與凡得瓦鍵在夾層距離約為4 Å(0.4nm)時，其結合能接近最小值，可提供更穩定、強度更高的鍵結，使磊晶的過程中產生對應的晶格排列。因此，只要選用厚度0.4nm以上的第一磊晶薄膜應可改變上方磊晶薄膜的晶格排列。
本發明說明如上，然其並非用以限定本創作所主張之專利權利範圍。其專利保護範圍當視後附之申請專利範圍及其等同領域而定。凡本領域具有通常知識者，在不脫離本專利精神或範圍內，所作之更動或潤飾，均屬於本創作所揭示精神下所完成之等效改變或設計，且應包含在下述之申請專利範圍內。
The present invention is best understood with reference to the detailed contents and accompanying drawings set forth herein. Various embodiments will be discussed below with reference to the accompanying drawings. However, it will be readily understood by those skilled in the art that the detailed description given herein with respect to the accompanying drawings is for illustrative purposes only, as these methods and systems may extend beyond the described embodiments. For example, the teachings given and the requirements of a particular application may result in a variety of optional and suitable methods to implement the functionality of any detail described herein. Therefore, any method may extend beyond the specific implementation options described in the following embodiments. Please refer to FIG1 , which is a schematic diagram of one embodiment of an epitaxial film 100 of the present invention. The epitaxial film 100 of the present invention is an epitaxial film 100 having a variety of stress states and is made by epitaxy. The epitaxial film 100 includes a second single crystal substrate 103 and a second epitaxial film 120. The second epitaxial film 120 is formed on the second single crystal substrate 103 by epitaxy. The second epitaxial film 120 also includes a first epitaxial region 120a and a second epitaxial region 120b. The first epitaxial region 120a and the second epitaxial region 120b have different stress states or strain states. Theoretically, strain is generated by stress, so different stress states correspond to different strain states. In semiconductor science, the stress state of a material can be used to control the junction potential and the bandgap system. Therefore, the epitaxial film 100 of the present invention has different stress states, which will be more conducive to controlling the junction potential and the bandgap system in the semiconductor. The following will describe the method for manufacturing the epitaxial film 100 of the present invention under various stress states. Please refer to FIG. 2 and FIG. 3A to FIG. 3D. FIG. 2 shows a flowchart for manufacturing the epitaxial film 100 under various stress states, and FIG. 3A to FIG. 3D show an embodiment of the method for manufacturing the epitaxial film 100 under various stress states. It should be noted that FIG. 3A to FIG. 3D are only examples and are not drawn in true proportion. First, please refer to FIG. 3A and perform step S10 to provide a first single crystal substrate 101, and form a sacrificial layer 102 and a first epitaxial film 110 on the first single crystal substrate 101. Specifically, the sacrificial layer 102 is formed first, and then the first epitaxial film 110 is formed on the sacrificial layer 102. The first single crystal substrate 101 is made of a first material, and a first epitaxial film 110 made of the first material is formed by epitaxy. The thickness of the first epitaxial film 110 is, for example, between 0.4 nm and 200 nm, and the sacrificial layer 102 is, for example, strontium titanate (STO) material. In this embodiment, the first material is strontium titanate (STO). Of course, a person skilled in the art may also choose other materials and epitaxial techniques, for example, the first material may be selected from the group consisting of strontium titanate (STO), lanthanum aluminate (LAO), neodymium gallate (NdGaO 3 NGO) and single crystal silicon. The material of the sacrificial layer 102 can be selected from the group consisting of lanthanum strontium manganite (LSMO), Sr 3 Al 2 O 6 , yttrium barium copper oxide (YBCO), and strontium ruthenate (chemical formula SrRuO 3 ). Next, please refer to FIG. 3B , and proceed to step S20 to remove the sacrificial layer 102 so that the first epitaxial film 110 is separated from the first single crystal substrate 101. In this embodiment, the first epitaxial film 110, the sacrificial layer 102, and the first single crystal substrate 101 are immersed in an etching liquid, and the sacrificial layer 102 is eroded by the etching liquid and removed. After the first epitaxial film 110 is separated from the first single crystal substrate 101, the first epitaxial film 110 is taken out. Then, please refer to FIG. 3C, and execute step S30 to transfer the first epitaxial film 110 to a second single crystal substrate 103, and make the first epitaxial film 110 cover a portion of the surface of the second single crystal substrate 103. Among them, the second single crystal substrate 103 is made of a second material, and the second material is, for example, iodine aluminate (LAO). It should be noted that the first material and the second material must be different materials. For example, if iodine aluminate (LAO) is selected as the first material, the second material must be selected from materials other than iodine aluminate (LAO). That is, the first epitaxial film 110 and the second single crystal substrate 103 will be made of different materials, and the first epitaxial film 110 and the second single crystal substrate 103 will have different lattice constants. According to the stress requirement, the second material can be selected from the group consisting of strontium titanate (STO), neodymium aluminate (LAO), neodymium gallate (NGO), aluminum oxide and single crystal silicon. In this embodiment, the first epitaxial film 110 is strontium titanate (STO), and the second single crystal substrate 103 is neodymium aluminate (LAO). Next, please refer to Figure 3D, and execute step S40 to perform epitaxy on the first epitaxial film 110 and the second single crystal substrate 103 to form a second epitaxial film 120 on the first epitaxial film 110 and the second single crystal substrate 103. The second epitaxial film 120 will be made of a third material. In this embodiment, the third material is bismuth ferrite (BFO), and in other embodiments, materials other than bismuth ferrite can also be selected. At this time, the second epitaxial film 120 will form a first epitaxial region 120a and a second epitaxial region 120b on the first epitaxial film 110 and the second single crystal substrate 103, respectively. Since the second epitaxial film 120 in the first epitaxial region 120a and the second epitaxial region 120b is formed based on the epitaxial formation of materials with different lattice constants, that is, based on the epitaxial formation of the first epitaxial film 110 (STO) and the second single crystal substrate 103 (LAO), even if the second epitaxial film 120 in the first epitaxial region 120a and the second epitaxial region 120b is the same material, different strain states will be generated. In other words, the stress state of the second epitaxial film 120 on the first epitaxial film 110 is different from the stress state of the second epitaxial film 120 on the second single crystal substrate 103. In step S10 and step S40, the epitaxial method uses pulsed laser deposition technology to form the first epitaxial film 110, the sacrificial layer 102 or the second epitaxial film 120. In other embodiments, the epitaxial technology can also use metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), vapor phase epitaxy (VPE), sputtering or selective epitaxial growth (SEG), etc. Therefore, through steps S10-S40, epitaxial films 100 with different stress states can be manufactured. The difference in stress state between each epitaxial region can be further used to control the junction potential gap band system. Next, please refer to Figure 2, Figure 4A and Figure 4B. Figure 4A and Figure 4B show an epitaxial film 200 of another embodiment. In addition, Figure 4B shows a cross-sectional view of the dotted line AA in Figure 4A. In one embodiment, multiple first epitaxial films 210 can be obtained by repeatedly performing steps S10 and S20. Different or the same first materials can be used to form the first epitaxial films 210 when repeatedly performing steps S10 and S20. For example, four steps S10 to S20 are repeated four times to obtain four first epitaxial films 210, and the first materials used can be strontium titanate (STO), strontium titanate (STO), lodestroyed aluminum oxide (LAO) and neodymium gallate (NGO). Then in step S30, these first epitaxial films 210 are transferred to different areas on the second single crystal substrate 203 and cover part of the area of the second single crystal substrate 103. Then, step S40 is performed to epitaxially grow these first epitaxial films 110 and the second single crystal substrate 203 to form a second epitaxial film 220, and the epitaxial film 200 of Figures 4A and 4B is obtained. In the embodiment of FIG. 4A and FIG. 4B , the second epitaxial film 220 further includes a plurality of epitaxial regions 220a to 220e. The plurality of epitaxial regions 220a to 220e are formed based on different first epitaxial films 210. For example, in FIG. 4B , the epitaxial region 220b is formed based on the first epitaxial film 210, and the epitaxial region 220c is formed based on the first epitaxial film 210'. The material of the first epitaxial film 210 is different from that of the first epitaxial film 210'. Even if the epitaxial region 220b and the epitaxial region 220c are both the second epitaxial film 220, they will have different stress states. Therefore, the second epitaxial films 220 in these epitaxial regions 220a to 220e will have different stress states. That is to say, by setting up multiple first epitaxial films 210 and using different or the same material combinations, more epitaxial regions with different stress states can be generated when forming the second epitaxial film 220. In addition, in the aforementioned embodiment, the square second epitaxial films 110 and 210 are neatly distributed on the second single crystal substrates 103 and 203, thereby forming square and neatly arranged epitaxial regions 120b, 220b~220d. However, it is not limited to this. The shape of the second epitaxial film can be other shapes, and the arrangement of multiple second epitaxial films can also be irregular. Please refer to Figure 5A, which shows a transmission electron microscope image of the epitaxial film 100 of the present invention. In Figure 5A, LAO is selected as the second single crystal substrate, STO is selected as the first epitaxial film, and BFO is selected as the second epitaxial film. From the images of the second single crystal substrate (LAO), the first epitaxial film (FS-STO) and the second epitaxial film (BFO (AG site)) in Figure 5A, it can be seen that their lattice arrangements are clearly distinguished. The first epitaxial region above the second single crystal substrate can be called T-phase, and the lattice arrangement in the T-phase epitaxial region is obviously affected by the second single crystal substrate, resulting in a similar lattice arrangement. The second epitaxial region above the first epitaxial film can be called R-phase, and the lattice arrangement in the R-phase epitaxial region is obviously affected by the first epitaxial film, resulting in a similar lattice arrangement. Therefore, it can be seen that the lattice arrangement of the film produced after the epitaxy above can be affected only through the thinner first epitaxial film. Since the lattice arrangement of T-phase and R-phase is different, regions with different lattice arrangements are formed on the same substrate (i.e., the second single crystal substrate). These regions provide different stress states, and these blocks with different stress states can be used to control the junction potential and bandgap system in the semiconductor. For example, various blocks with different stress states are formed on the same second single crystal substrate through first epitaxial films of different materials to establish the required bandgap system. Please refer to Figures 5B to 5D. Figure 5B shows the diffraction pattern of the second single crystal substrate, and Figure 5C shows the diffraction pattern of the first epitaxial region. Figure 5D shows the diffraction pattern of the second epitaxial region. It can be seen from Figures 5B to 5D that the diffraction patterns in the second epitaxial substrate, T-phase, and R-phase are different, which means that different stress states are present. In addition, in the embodiment of FIG. 5A , the thickness of the first epitaxial film is about 5-7 nm. However, the inventors have found through calculation that even if the thickness of the first epitaxial film is less than 2 nm, the lattice arrangement of the upper epitaxial film can be changed. Please refer to FIG. 6 , which shows the relationship between the binding energy and the interlayer distance. FIG. 6 shows the Van der Waals bonding of the homogeneous bonding (STO-STO), the ionic bonding (Ionic bonding) and the Van der Waals bonding of the heterogeneous bonding (STO-BFO). As can be seen from the figure, the ionic bond and van der Waals bond of the heterojunction (STO-BFO) are close to the minimum when the interlayer distance is about 4 Å (0.4nm), which can provide a more stable and stronger bond, so that the corresponding lattice arrangement is produced during the epitaxial process. Therefore, as long as the first epitaxial film with a thickness of more than 0.4nm is selected, the lattice arrangement of the upper epitaxial film should be changed. The invention is described above, but it is not used to limit the scope of the patent rights claimed by this creation. The scope of patent protection shall be determined by the scope of the attached patent application and its equivalent field. Any changes or modifications made by those with common knowledge in this field without departing from the spirit or scope of this patent shall be regarded as equivalent changes or designs completed under the spirit disclosed by this creation, and shall be included in the scope of the patent application below.