TWI844075B - A transparent flexible board and method for manufacturing the transparent flexible board - Google Patents
A transparent flexible board and method for manufacturing the transparent flexible board Download PDFInfo
- Publication number
- TWI844075B TWI844075B TW111130651A TW111130651A TWI844075B TW I844075 B TWI844075 B TW I844075B TW 111130651 A TW111130651 A TW 111130651A TW 111130651 A TW111130651 A TW 111130651A TW I844075 B TWI844075 B TW I844075B
- Authority
- TW
- Taiwan
- Prior art keywords
- transparent
- mixed
- dimethylacetamide
- dmac
- solution
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 67
- 238000000034 method Methods 0.000 title claims description 21
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims abstract description 144
- 239000000463 material Substances 0.000 claims abstract description 102
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 239000002113 nanodiamond Substances 0.000 claims abstract description 63
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 29
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 29
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims abstract description 12
- 150000004767 nitrides Chemical class 0.000 claims abstract description 9
- 239000004642 Polyimide Substances 0.000 claims abstract description 5
- 229920001721 polyimide Polymers 0.000 claims abstract description 5
- 150000008064 anhydrides Chemical class 0.000 claims abstract 3
- 150000001875 compounds Chemical class 0.000 claims abstract 2
- DMBHHRLKUKUOEG-UHFFFAOYSA-N diphenylamine Chemical compound C=1C=CC=CC=1NC1=CC=CC=C1 DMBHHRLKUKUOEG-UHFFFAOYSA-N 0.000 claims description 68
- 239000007788 liquid Substances 0.000 claims description 66
- 239000000243 solution Substances 0.000 claims description 53
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 46
- 239000011259 mixed solution Substances 0.000 claims description 44
- 238000010438 heat treatment Methods 0.000 claims description 15
- 230000015654 memory Effects 0.000 claims description 14
- 238000004544 sputter deposition Methods 0.000 claims description 14
- 239000004952 Polyamide Substances 0.000 claims description 13
- 238000001704 evaporation Methods 0.000 claims description 13
- 229920002647 polyamide Polymers 0.000 claims description 13
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 11
- 229910052731 fluorine Inorganic materials 0.000 claims description 11
- 239000011737 fluorine Substances 0.000 claims description 11
- 238000003980 solgel method Methods 0.000 claims description 11
- 239000002243 precursor Substances 0.000 claims description 10
- 238000002156 mixing Methods 0.000 claims description 9
- 230000008020 evaporation Effects 0.000 claims description 8
- 238000003756 stirring Methods 0.000 claims description 8
- 239000002131 composite material Substances 0.000 claims description 7
- 150000004985 diamines Chemical class 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 4
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 4
- -1 polydimethylsiloxane Polymers 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 4
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract description 11
- 239000012790 adhesive layer Substances 0.000 abstract 3
- 239000010410 layer Substances 0.000 abstract 3
- BWLUMTFWVZZZND-UHFFFAOYSA-N Dibenzylamine Chemical compound C=1C=CC=CC=1CNCC1=CC=CC=C1 BWLUMTFWVZZZND-UHFFFAOYSA-N 0.000 abstract 1
- 239000011787 zinc oxide Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 11
- 230000001070 adhesive effect Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 239000007769 metal material Substances 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 8
- 229910003437 indium oxide Inorganic materials 0.000 description 7
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 230000018044 dehydration Effects 0.000 description 6
- 238000006297 dehydration reaction Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000007363 ring formation reaction Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 4
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 3
- 235000019441 ethanol Nutrition 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910000314 transition metal oxide Inorganic materials 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- AKJVMGQSGCSQBU-UHFFFAOYSA-N zinc azanidylidenezinc Chemical compound [Zn++].[N-]=[Zn].[N-]=[Zn] AKJVMGQSGCSQBU-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 1
- 101000827703 Homo sapiens Polyphosphoinositide phosphatase Proteins 0.000 description 1
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 1
- 102100023591 Polyphosphoinositide phosphatase Human genes 0.000 description 1
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 1
- 229910007675 Sn3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- VBXWCGWXDOBUQZ-UHFFFAOYSA-K diacetyloxyindiganyl acetate Chemical compound [In+3].CC([O-])=O.CC([O-])=O.CC([O-])=O VBXWCGWXDOBUQZ-UHFFFAOYSA-K 0.000 description 1
- 125000006159 dianhydride group Chemical group 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 description 1
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
Images
Landscapes
- Laminated Bodies (AREA)
- Surface Heating Bodies (AREA)
Abstract
Description
本發明有關於一種透明軟板元件及其製造方法,特別是一種含有奈米鑽石(ND)的透明軟板元件及其製造方法。 The present invention relates to a transparent soft board element and a manufacturing method thereof, in particular to a transparent soft board element containing nanodiamonds (ND) and a manufacturing method thereof.
一般而言,電阻式記憶體屬於一種非揮發性記憶體,並且,電阻式記憶體主要是呈現將一上金屬電極層、一下金屬電極層與一記憶層進行垂直堆疊的結構樣態,其中,記憶層一般是由過渡金屬氧化物(transition metal oxides,TMO)所構成的電阻轉態層(resistance switching layer),進而記憶體在不同偏壓電場的環境中,記憶體的電阻能在高電阻狀態和低電阻狀態之間來轉換,然而,過渡金屬氧化物的氧化程度是影響電阻式記憶體的電阻轉態特性(resistance switching characteristics)與操作效能的主要因素。 Generally speaking, resistive memory is a type of non-volatile memory. Moreover, resistive memory mainly presents a structure in which an upper metal electrode layer, a lower metal electrode layer and a memory layer are vertically stacked. The memory layer is generally a resistance switching layer composed of transition metal oxides (TMO). In the environment of different bias electric fields, the resistance of the memory can switch between a high resistance state and a low resistance state. However, the oxidation degree of the transition metal oxide is the main factor affecting the resistance switching characteristics and operating performance of the resistive memory.
另外,目前市面上大部分非揮發性記憶體的電阻轉態層都內含有具有色度的金屬、氧化金屬或氮化金屬,使得非揮發性記憶體的整體無法呈現全透明的樣態,進而非揮發性記憶體難以運用在虛擬實境的裝置,因此非揮發性記憶體有其改良的必要性,並且,目前市面上大部分非揮發性記憶體的大都製作成矽基板或藍寶石基板,而矽基板與藍寶石基板兩者皆不可彎曲。 In addition, the resistance transition layer of most non-volatile memories on the market currently contains metals, metal oxides or metal nitrides with color, which makes the non-volatile memory as a whole unable to present a completely transparent state, and thus it is difficult to use non-volatile memory in virtual reality devices. Therefore, non-volatile memory needs to be improved. In addition, most non-volatile memories on the market are made into silicon substrates or sapphire substrates, and both silicon substrates and sapphire substrates cannot be bent.
然而,撓式電子元件為目前3C、醫療器材的趨勢,而聚亞醯胺(PI)具有可彎曲、耐高溫、耐化學腐蝕的特性,使其成為軟性基板的首選,其中, 現今電子元件的密集度增加,由電子元件堆疊所產生的熱能急遽提升,而高溫會影響電子元件的運作速度以及壽命,因此如何將溫度降低成為當今重要的課題。 However, flexible electronic components are the current trend in 3C and medical devices, and polyimide (PI) has the characteristics of being bendable, resistant to high temperatures, and resistant to chemical corrosion, making it the first choice for flexible substrates. Nowadays, the density of electronic components has increased, and the heat energy generated by the stacking of electronic components has increased dramatically. High temperatures will affect the operating speed and life of electronic components, so how to reduce the temperature has become an important issue today.
本發明的主要目的在於改良透明軟板元件的基板材質組成,使得透明軟板元件不僅依然保持全透明的樣態,還能降低導熱係數介電常數。 The main purpose of the present invention is to improve the substrate material composition of the transparent soft board element so that the transparent soft board element not only remains fully transparent but also reduces the thermal conductivity and dielectric constant.
為實現前述目的,本發明提供一種透明軟板元件與一種透明軟板元件製造方法。 To achieve the aforementioned purpose, the present invention provides a transparent soft board element and a method for manufacturing the transparent soft board element.
上述透明軟板元件主要由一透明基板、一透明接著材、一第一透明電極、一透明電阻材與一第二透明電極所構成,上述透明接著材連接於上述透明基板,並由含有矽氧烷材料所合成的聚亞醯胺複合物構成,而上述第一透明電極連接於上述透明接著材,並由氧化鋁鋅或氧化銦錫的其中一種材料構成。 The transparent flexible plate element is mainly composed of a transparent substrate, a transparent adhesive material, a first transparent electrode, a transparent resistor material and a second transparent electrode. The transparent adhesive material is connected to the transparent substrate and is composed of a polyimide composite synthesized from a siloxane material. The first transparent electrode is connected to the transparent adhesive material and is composed of one of aluminum oxide zinc or indium oxide tin.
上述透明電阻,連接於上述第一透明電極,並由一金屬氧化材或一金屬氮化材的其中一種材料構成,且上述透明電阻材在遭受不同偏壓電場時將形成一可調變電阻的記憶體結構,而上述第二透明電極,連接於上述透明電阻材,由氧化鋁鋅或氧化銦錫的其中一種材料構成。 The transparent resistor is connected to the first transparent electrode and is made of a metal oxide material or a metal nitride material. When subjected to different bias electric fields, the transparent resistor will form a memory structure with adjustable resistance. The second transparent electrode is connected to the transparent resistor and is made of a material of aluminum zinc oxide or indium tin oxide.
其中,上述透明基板由一含氟或不對稱結構的二苯胺、一含氟或不對稱結構的二酸酐、一二甲基乙醯胺(DMAc)與一奈米鑽石溶液所構成,上述奈米鑽石溶液含有一奈米鑽石(ND)。 The transparent substrate is composed of a fluorine-containing or asymmetric diphenylamine, a fluorine-containing or asymmetric dianhydride, a dimethylacetamide (DMAc) and a nanodiamond solution, and the nanodiamond solution contains a nanodiamond (ND).
於此實施例中,上述奈米鑽石(ND)的比例佔上述二苯胺、二酸酐、二甲基乙醯胺(DMAc)與奈米鑽石溶液所構成四者加總的0.1~5%,而上述奈米鑽石(ND)的粒徑為1~20奈米。 In this embodiment, the ratio of the nanodiamond (ND) is 0.1-5% of the total of the diphenylamine, dianhydride, dimethylacetamide (DMAc) and nanodiamond solution, and the particle size of the nanodiamond (ND) is 1-20 nanometers.
於此實施例中,上述二甲基乙醯胺(DMAc)呈現液態狀,而上述二苯胺與二酸酐兩者都呈現粉末狀,使得上述二苯胺與二酸酐兩者能溶解於上述二甲基乙醯胺(DMAc)與奈米鑽石溶液。 In this embodiment, the dimethylacetamide (DMAc) is in liquid form, and the diphenylamine and dianhydride are both in powder form, so that the diphenylamine and dianhydride can be dissolved in the dimethylacetamide (DMAc) and nanodiamond solution.
上述透明軟板元件製造方法,包含:一基板製成步驟、一接著材製成步驟、一電極製成步驟、一電阻材製成步驟與一電極再製成步驟。 The above-mentioned transparent flexible board element manufacturing method includes: a substrate manufacturing step, a bonding material manufacturing step, an electrode manufacturing step, a resistor material manufacturing step and an electrode manufacturing step.
上述基板製成步驟:提供一具有奈米鑽石(ND)的奈米鑽石溶液,並將一二苯胺、一二酸酐與一二甲基乙醯胺(DMAc)三者混和攪拌於上述奈米鑽石溶液以形成一透明基板。 The steps of making the above substrate are: providing a nanodiamond solution containing nanodiamonds (ND), and mixing diphenylamine, bis(dianhydride) and dimethylacetamide (DMAc) in the nanodiamond solution to form a transparent substrate.
上述接著材製成步驟:將一含氟及不對稱結構的二胺與一含氟及不對稱的二胺混合,並降溫維持在一冰浴溫度,再加入一二酸酐以及一聚二甲基矽氧烷來取得含有矽氧烷材料的前驅物聚醯胺酸,將上述聚醯胺酸加熱乾燥形成一透明接著材,再把上述透明接著材連接於上述透明基板。 The steps of making the above-mentioned bonding material are: mixing a fluorine-containing and asymmetric diamine with a fluorine-containing and asymmetric diamine, cooling and maintaining the temperature at an ice bath, then adding a dianhydride and a polydimethylsiloxane to obtain a precursor polyamide containing a siloxane material, heating and drying the polyamide to form a transparent bonding material, and then connecting the above-mentioned transparent bonding material to the above-mentioned transparent substrate.
上述電極製成步驟:採用濺鍍法、加熱蒸鍍法或溶膠-凝膠法的其中一種方式將一由複合氧化金屬構成的第一透明電極成型於上述透明接著材。 The above-mentioned electrode manufacturing steps: using one of the methods of sputtering, heating evaporation or sol-gel method to form a first transparent electrode composed of a composite metal oxide on the above-mentioned transparent adhesive material.
上述電阻材製成步驟:採用濺鍍法、加熱蒸鍍法或溶膠-凝膠法的其中一種方式將一由金屬氧化材或金屬氮化材構成的透明電阻材成型於上述第一透明電極。 The steps of making the above-mentioned resistor material: using one of the sputtering method, the heating evaporation method or the sol-gel method to form a transparent resistor material composed of a metal oxide material or a metal nitride material on the above-mentioned first transparent electrode.
上述電極再製成步驟:採用濺鍍法、加熱蒸鍍法或溶膠-凝膠法的其中一種方式將一由複合氧化金屬構成的第二透明電極成型於上述透明電阻材。 The above-mentioned electrode is then fabricated in the following steps: a second transparent electrode made of a composite metal oxide is formed on the above-mentioned transparent resistor material by using one of the methods of sputtering, heating evaporation or sol-gel method.
於一較佳實施例中,於進行上述基板製成步驟時,將全部的上述二苯胺與一部分的上述二酸酐混合於一部分的上述二甲基乙醯胺(DMAc)以形 成一第一混合液體,再將剩餘的上述二酸酐與剩餘的上述二甲基乙醯胺(DMAc)進行混合以形成一第二混合液體,最後將上述第一混合液體、第二混合液體與奈米鑽石溶液進行塗佈高溫加熱,並除去上述二甲基乙醯胺(DMAc)以形成上述透明基板。 In a preferred embodiment, when performing the substrate manufacturing step, all of the diphenylamine and a portion of the dianhydride are mixed with a portion of the dimethylacetamide (DMAc) to form a first mixed liquid, and then the remaining dianhydride is mixed with the remaining dimethylacetamide (DMAc) to form a second mixed liquid. Finally, the first mixed liquid, the second mixed liquid and the nanodiamond solution are coated and heated at a high temperature, and the dimethylacetamide (DMAc) is removed to form the transparent substrate.
於另一較佳實施例中,於進行上述基板製成步驟時,先將上述二甲基乙醯胺(DMAc)與奈米鑽石溶液進行混合以形成一二甲基乙醯胺混合液,一部分的上述二甲基乙醯胺混合液與全部的上述二苯胺進行混合以形成一第三混合液體,並將另一部分的上述二甲基乙醯胺混合液與一部分的上述二酸酐進行混合以形成一第四混合液體,接下來將剩餘的上述二酸酐與全部上述二甲基乙醯胺(DMAc)進行混合以形成一第五混合液體,最後將上述第三混合液體、第四混合液體與第五混合液體進行塗佈高溫加熱,並除去上述二甲基乙醯胺(DMAc)以形成上述透明基板。 In another preferred embodiment, when performing the substrate manufacturing step, the dimethylacetamide (DMAc) is first mixed with the nanodiamond solution to form a dimethylacetamide mixed solution, a portion of the dimethylacetamide mixed solution is mixed with all of the diphenylamine to form a third mixed solution, and another portion of the dimethylacetamide mixed solution is mixed with a portion of the dianhydride to form a fourth mixed solution, and then the remaining dianhydride is mixed with all of the dimethylacetamide (DMAc) to form a fifth mixed solution, and finally the third mixed solution, the fourth mixed solution and the fifth mixed solution are coated and heated at a high temperature, and the dimethylacetamide (DMAc) is removed to form the transparent substrate.
於又一較佳實施例中,於進行上述基板製成步驟時,將一部分的上述二甲基乙醯胺(DMAc)與全部的上述二苯胺混合於上述奈米鑽石溶液以形成一第六混合液體,再將剩餘的上述二甲基乙醯胺(DMAc)與全部的上述二酸酐進行混合以形成一第七混合液體,最後將上述第六混合液體與第七混合液體進行塗佈高溫加熱,並除去上述二甲基乙醯胺(DMAc)以形成上述透明基板。 In another preferred embodiment, when performing the substrate manufacturing step, a portion of the dimethylacetamide (DMAc) and all of the diphenylamine are mixed in the nanodiamond solution to form a sixth mixed liquid, and then the remaining dimethylacetamide (DMAc) is mixed with all of the dianhydride to form a seventh mixed liquid. Finally, the sixth mixed liquid and the seventh mixed liquid are coated and heated at a high temperature, and the dimethylacetamide (DMAc) is removed to form the transparent substrate.
於再一較佳實施例中,於進行上述基板製成步驟時,將一部分的上述二甲基乙醯胺(DMAc)、一部分的上述二苯胺、一部分的上述二酸酐與一部分的上述奈米鑽石溶液進行混合以形成一第八混合液體,另將剩餘的上述二甲基乙醯胺(DMAc)、剩餘的上述二苯胺、剩餘的上述二酸酐與剩餘的上述奈米鑽石溶液進行混合以形成另一個上述第八混合液體,最後對所有的上述第八混合 液體進行塗佈高溫加熱,並除去上述二甲基乙醯胺(DMAc)以形成上述透明基板。 In another preferred embodiment, when performing the substrate manufacturing step, a portion of the dimethylacetamide (DMAc), a portion of the diphenylamine, a portion of the dianhydride and a portion of the nanodiamond solution are mixed to form an eighth mixed liquid, and the remaining dimethylacetamide (DMAc), the remaining diphenylamine, the remaining dianhydride and the remaining nanodiamond solution are mixed to form another eighth mixed liquid, and finally all the eighth mixed liquids are coated with high temperature heating, and the dimethylacetamide (DMAc) is removed to form the transparent substrate.
於最後一較佳實施例中,於進行上述基板製成步驟時,先將上述二甲基乙醯胺(DMAc)與奈米鑽石溶液進行混合以形成一二甲基乙醯胺混合液,再將一部分的上述二甲基乙醯胺(DMAc)與全部的上述二苯胺進行混合以形成一第九混合液體,而一部分的上述二酸酐與全部上述二甲基乙醯胺混合液進行混合以形成一第十混合液體,並將剩餘的上述二酸酐與剩餘的上述二甲基乙醯胺(DMAc)進行混合以形成一第十一混合液體,最後,將上述第九混合液體、第十混合液體與第十一混合液體進行塗佈高溫加熱,並除去上述二甲基乙醯胺(DMAc)以形成上述透明基板。 In the last preferred embodiment, when performing the substrate manufacturing step, the dimethylacetamide (DMAc) is first mixed with the nanodiamond solution to form a dimethylacetamide mixed solution, and then a portion of the dimethylacetamide (DMAc) is mixed with all the diphenylamine to form a ninth mixed solution, and a portion of the dianhydride is mixed with all the dimethylacetamide mixed solution to form a tenth mixed solution, and the remaining dianhydride is mixed with the remaining dimethylacetamide (DMAc) to form an eleventh mixed solution. Finally, the ninth mixed solution, the tenth mixed solution and the eleventh mixed solution are coated and heated at a high temperature, and the dimethylacetamide (DMAc) is removed to form the transparent substrate.
本發明的特點在於第一透明電極透過透明接著材而連接於透明基板,而第二透明電極透過透明電阻材而連接於第一透明電極,使得透明基板、第一透明電極與第二透明電極三者依序進行堆疊排列,進而整個透明軟板元件能呈現透明的樣態,並且,透明基板是由二苯胺、二酸酐、二甲基乙醯胺(DMAc)與奈米鑽石溶液所構成,讓透明軟板元件導熱係數能介於0.2~0.5之間,以及透明軟板元件的介電常數能介於2.5~3之間,進而透明軟板元件還能降低導熱係數介電常數。 The feature of the present invention is that the first transparent electrode is connected to the transparent substrate through a transparent adhesive material, and the second transparent electrode is connected to the first transparent electrode through a transparent resistor material, so that the transparent substrate, the first transparent electrode and the second transparent electrode are stacked in sequence, and the entire transparent soft board element can be transparent. In addition, the transparent substrate is composed of diphenylamine, dianhydride, dimethylacetamide (DMAc) and nano-diamond solution, so that the thermal conductivity of the transparent soft board element can be between 0.2 and 0.5, and the dielectric constant of the transparent soft board element can be between 2.5 and 3, so that the transparent soft board element can also reduce the thermal conductivity and dielectric constant.
1:透明軟板元件 1: Transparent soft board components
11:透明基板 11: Transparent substrate
12:透明接著材 12: Transparent adhesive material
13:第一透明電極 13: First transparent electrode
131:第一電極層體 131: First electrode layer
14:透明電阻材 14: Transparent resistor material
141:電阻層體 141: Resistor layer
15:第二透明電極 15: Second transparent electrode
151:第二電極層體 151: Second electrode layer
2:透明軟板元件製造方法 2: Manufacturing method of transparent soft board components
21:基板製成步驟 21: Substrate manufacturing steps
22:接著材製成步驟 22: Then the material is made into steps
23:電極製成步驟 23: Electrode manufacturing steps
24:電阻材製成步驟 24: Resistor material manufacturing steps
25:電極再製成步驟 25: Electrode re-production step
圖1為本發明透明軟板元件的示意圖;圖2為本發明透明軟板元件製造方法的步驟流程圖;圖3為圖2中基板製成步驟的示意圖; 圖4為圖2中接著材製成步驟的示意圖;圖5為圖2中電極製成步驟的示意圖;圖6為圖2中電阻材製成步驟的示意圖;圖7為圖2中電極再製成步驟的示意圖;圖8為第二較佳實施例中基板製成步驟的示意圖;圖9為第三較佳實施例中基板製成步驟的示意圖;圖10為第四較佳實施例中基板製成步驟的示意圖;以及圖11為第五較佳實施例中基板製成步驟的示意圖。 FIG1 is a schematic diagram of a transparent soft board element of the present invention; FIG2 is a flow chart of the steps of manufacturing a transparent soft board element of the present invention; FIG3 is a schematic diagram of the substrate manufacturing step in FIG2; FIG4 is a schematic diagram of the bonding material manufacturing step in FIG2; FIG5 is a schematic diagram of the electrode manufacturing step in FIG2; FIG6 is a schematic diagram of the resistor material manufacturing step in FIG2; FIG7 is a schematic diagram of the electrode manufacturing step in FIG2; FIG8 is a schematic diagram of the substrate manufacturing step in the second preferred embodiment; FIG9 is a schematic diagram of the substrate manufacturing step in the third preferred embodiment; FIG10 is a schematic diagram of the substrate manufacturing step in the fourth preferred embodiment; and FIG11 is a schematic diagram of the substrate manufacturing step in the fifth preferred embodiment.
茲為便於更進一步對本發明之構造、使用及其特徵有更深一層明確、詳實的認識與瞭解,爰舉出較佳實施例,配合圖式詳細說明如下:請參閱圖1與圖2所示,於第一較佳實施例中,本發明透明軟板元件1經由一透明軟板元件製造方法2所製成,使得透明軟板元件1會形成一透明基板11、一透明接著材12、一第一透明電極13、一透明電阻材14以及一第二透明電極15。
In order to facilitate a deeper and more detailed understanding of the structure, use and features of the present invention, a preferred embodiment is given and described in detail with the help of the drawings as follows: Please refer to Figures 1 and 2. In the first preferred embodiment, the transparent flexible board element 1 of the present invention is manufactured by a transparent flexible board
請參閱圖3至圖7所示,為透明軟板元件製造方法2的製作流程步驟,請參閱圖1、圖2與圖3所示,首先,先進行一基板製成步驟21,於進行基板製成步驟21時,先提供一呈現液態樣態的奈米鑽石溶液、一呈現液態狀態的二甲基乙醯胺(DMAc)、一呈現粉末樣態的二苯胺與一呈現粉末樣態的二酸酐,其中,二苯胺與二酸酐兩者都呈現含氟或不對稱結構,而奈米鑽石溶液含有粒徑為1~20奈米的奈米鑽石(ND),而奈米鑽石(ND)的比例佔二苯胺、二酸酐、二甲基乙醯胺(DMAc)與奈米鑽石溶液所構成四者加總的0.1~5%,接下來,將奈米鑽
石溶液、二甲基乙醯胺(DMAc)、二苯胺與二酸酐進行塗佈高溫加熱,並除去二甲基乙醯胺(DMAc)而形成透明基板11,於此實施例中,進行基板製成步驟21會在玻璃器皿三頸瓶中,先將一部分的二酸酐與全部的二苯胺在室溫下以攪拌速度為80rpm的速度混合於一部分的二甲基乙醯胺(DMAc),使得二苯胺與二酸酐都溶解於二甲基乙醯胺(DMAc)而形成一第一混合液體,再將剩餘的二酸酐與剩餘的二甲基乙醯胺(DMAc)在室溫下進行以攪拌速度為80rpm的速度進行混合,使得二酸酐溶解於二甲基乙醯胺(DMAc)而形成一第二混合液體,再將第一混合液體、第二混合液體與奈米鑽石溶液於真空環境下進行脫除氣泡,將脫泡完成的第一混合液體、第二混合液體與奈米鑽石溶液進行塗佈,最後以階段性升溫的方式加熱至300℃進行脫水環化反應,並除去二甲基乙醯胺(DMAc)以形成透明基板11,藉此,即完成基板製成步驟21,於此實施例中,以上混合動作會以攪拌速度80rpm在室溫下進行並於三頸瓶內全程通入氮氣,避免水氣影響第一混合液體、第二混合液體與奈米鑽石溶液的分子量多寡。
Please refer to FIG. 3 to FIG. 7, which are the steps of the manufacturing process of the transparent soft board
請參閱圖2與圖4所示,完成基板製成步驟21之後,開始進行一接著材製成步驟22,於進行接著材製成步驟22時,將一含氟及不對稱結構的二胺與一含氟及不對稱的二胺進行混合,並在一冰浴中降溫維持在一冰浴溫度,再添加約八成的一二酸酐(IDPA)材料進行反應,反應一段時間之後,再加入一聚二甲基矽氧烷(PDMS)溶液,最終再添加剩餘約兩成的二酸酐(IDPA)材料來進行混合以產生含有矽氧烷材料的一前驅物聚醯胺酸溶液,其中,藉由操作者以目測的方式觀察含有矽氧烷材料的前驅物聚醯胺酸溶液中的黏度,直到黏度上升再將含有矽氧烷材料的前驅物聚醯胺酸溶液移除冰浴,持續反應一段時間後來產生淡黃色黏稠含有矽氧烷材料的前驅物聚醯胺酸溶液,淡黃色黏稠含有矽氧
烷材料的前驅物聚醯胺酸溶液具有其固體含量約略等於15%,以及將含有矽氧烷材料的前驅物聚醯胺酸溶液塗佈於PET片上並移入熱風循環烘箱加熱至約90℃持續一小時後,移出熱風循環烘箱形成一聚醯胺酸薄膜,接著,將聚醯胺酸薄膜從PET片上取下並使用銅製框膜模具固定,再次移入熱風循環烘箱加熱至約300℃進行脫水閉環,得到含有矽氧烷材料的聚亞醯胺酸薄膜構成的透明接著材12,完成透明接著材12之後,將透明接著材12連接於透明基板11的上側面。
Please refer to FIG. 2 and FIG. 4. After the
請參閱圖2與圖5所示,完成接著材製成步驟22之後,開始進行一電極製成步驟23,於進行電極製成步驟23時,提供一由複合氧化金屬構成的第一透明電極13,而第一透明電極13透過濺鍍法、加熱蒸鍍法或溶膠-凝膠法(Sol-Gel)的其中一種方式形成於透明接著材12,使得透明接著材12位於透明基板11與第一透明電極13之間,如圖所示,第一透明電極13具有多個第一電極層體131,而每一個第一電極層體131都是由相同的金屬材料所組成,並且,每一個第一電極層體131的金屬材料比例都不相同,使得第一透明電極13透過不同金屬材料比例的第一電極層體131而堆疊成漸變式電極。
Please refer to FIG. 2 and FIG. 5. After the bonding
請參閱圖2與圖6所示,完成電極製成步驟23之後,開始進行一電阻材製成步驟24,於進行電阻材製成步驟24時,提供一由金屬氧化材或金屬氮化材構成的透明電阻材14,而透明電阻材14透過濺鍍法、加熱蒸鍍法或溶膠-凝膠法(Sol-Gel)的其中一種方式形成於第一透明電極13,使得第一透明電極13位於透明接著材12與透明電阻材14之間,於此實施例中,金屬氧化材的材料可以為氧化鋅(ZnO)、氧化鋁(Al2O3)、氧化銦(In2O3)或氧化錫(SnO2)的其中一種,以及該金屬氮化材的材料可以為氮化鋅(Zn3N2)、氮化鋁(AlN)、氮化銦(InN)或氮化錫(Sn3N4)的其中一種,如圖所示,不論透明電阻材14是由金屬氧化材所構
成,還是由金屬氮化材所構成,透明電阻材14會具有複數個電阻層體141,每一個電阻層體141都是由相同的金屬材料所組成,並且,每一個電阻層體141的氧化程度都不相同,使得透明電阻材14透過不同氧化程度的電阻層體141而堆疊成漸變式電阻薄膜。
Please refer to FIG. 2 and FIG. 6. After the
請參閱圖2與圖7所示,完成電阻材製成步驟24之後,開始進行一電極再製成步驟25,於進行電極再製成步驟25時,提供一由複合氧化金屬構成的第二透明電極15,第二透明電極15透過濺鍍法、加熱蒸鍍法或溶膠-凝膠法(Sol-Gel)的其中一種方式而形成於該透明電阻材14,使得透明電阻材14位在第一透明電極13與第二透明電極15以形成透明軟板元件1,如圖所示,第二透明電極15具有多個第二電極層體151,而每一個第二電極層體151都是由相同的金屬材料所組成,並且,每一個第二電極層體151的金屬材料比例都不相同,使得第二透明電極15透過不同金屬材料比例的第二電極層體151而堆疊成漸變式電極。
Please refer to FIG. 2 and FIG. 7. After the resistor
於此實施例中,於電極製成步驟23與電極再製成步驟25中所述濺鍍法的其中一種方式是採用濺鍍的方式在真空濺鍍機中通入氬氣與氧氣將氧化銦錫(ITO)靶材形成氧化銦錫(ITO)薄膜等金屬氧化材薄膜,以及另一種方式是同時將銦氧化物(In2O3)靶材與錫氧化物(SnO2)靶材等金屬氧化靶材濺鍍形成氧化銦錫(ITO)薄膜等金屬氧化材薄膜。
In this embodiment, one of the sputtering methods described in the
於此實施例中,於電極製成步驟23與電極再製成步驟25中所述加熱蒸鍍法的其中一種方式是採用蒸鍍的方式在真空蒸鍍機中通入氧氣將單一氧化銦錫(ITO)材料或將銦錫氧化物(In2O3)和錫氧化物(SnO2)的混合材料等金屬氧化材料蒸鍍形成氧化銦錫(ITO)薄膜等金屬氧化材薄膜,以及另一種方式是採用爐管來加熱提高溫度,於高溫時通入氧氣,且同時將銦氧化物(In2O3)與錫氧
化物(SnO2)的混合材料等金屬氧化材料形成氧化銦錫(ITO)薄膜等金屬氧化材薄膜。
In this embodiment, one of the heating evaporation methods described in the
於此實施例中,於電極製成步驟23與電極再製成步驟25中溶膠-凝膠法的其中一種方式於空氣中是將氯化銦(In2Cl3)的一前驅物摻雜含有7at%錫(Sn)的氯化錫(SnCl4)混合形成一溶質,該溶質加入乙二醇(ethylene glycol)等一溶劑來混合均勻且加熱形成一溶液,再將該溶液使用旋轉塗佈法以每分鐘約2000轉的轉速旋轉塗佈並以每小時溫度上升約300℃的速率先加熱至200℃來持續一小時後再上升溫度至600℃來持續一小時後形成氧化銦錫(ITO)薄膜等金屬氧化材薄膜;而另一種方式於氮氣中是將In(NO3)3‧2H2O溶於乙醯丙酮(acetylacetone)溶液所形成的該前驅物摻雜溶於乙醇(ethanol)溶液中的氯化錫(SnCl4)混合形成該溶質,其中,氯化錫(SnCl4)中含有8~15wt%錫(Sn),該溶質加入丙酮(acetone)的該溶劑來混合均勻而形成該溶液,再將該溶液使用浸漬法以每分鐘約8.6公分的速度塗佈並加熱至約500℃來持續20分後形成氧化銦錫(IT0)薄膜等金屬氧化材薄膜;另一種方式是將醋酸銦(indium acetate)的該前驅物摻雜含有4mol%錫(Sn)的tin octylate混合形成該溶質,該溶質加入n-propanol diethanolamine該溶劑與DEA添加劑來混合均勻而形成該溶液,再將該溶液使用浸漬法以每分鐘約6.0公分的速度塗佈並加熱至約650℃來持續30分後放置於氮氣中形成氧化銦錫(ITO)薄膜等金屬氧化材薄膜。
In this embodiment, in one of the sol-gel methods in the
於此實施例中,電阻材製成步驟24中所述濺鍍法是採用濺鍍的方式在真空濺鍍機中通入氬氣與氧氣將鋅(Zn)靶材或氧化鋅(ZnO)靶材等金屬靶材或金屬氧化靶材濺鍍形成氧化鋅(ZnO)薄膜等金屬氧化材薄膜。
In this embodiment, the sputtering method described in the resistor
於此實施例中,於電阻材製成步驟24中所述加熱蒸鍍法的其中一種方式是採用蒸鍍的方式在真空蒸鍍機中通入氧氣將單一鋅(Zn)材料或氧化鋅(ZnO)材料等金屬材料或金屬氧化材料蒸鍍形成氧化鋅(ZnO)薄膜等金屬氧化材薄膜;另一種方式是採用爐管來加熱提高溫度的方式來將溫度加熱至溫度約100℃~500℃之中通入氧氣,且同時將鋅(Zn)材料或氧化鋅(ZnO)材料等金屬材料或金屬氧化材料形成氧化鋅(ZnO)薄膜等金屬氧化材薄膜;以及又一種方式是採用溶膠-凝膠法的方式將含有兩個結晶水的醋酸鋅(Zn(CH3COO)2‧2H2O)作為該溶質,將該溶質加入該溶劑為99.5%的無水酒精(ethanol,C2H5OH)中來調配成0.05莫耳濃度,並放置在恆溫攪拌機上加熱至約60℃持續攪拌兩小時來獲得氧化鋅(ZnO)清澈透明溶液,再將該溶液以每分鐘約2000轉的速度塗佈並以每小時溫度上升約200℃的速率先加熱至200℃來持續一小時乾燥後形成氧化鋅(ZnO)薄膜等該金屬氧化材薄膜。
In this embodiment, one of the methods of the heating evaporation method in the resistor
請參閱圖8所示,於第二較佳實施例中,與第一較佳實施例的差別基板製成步驟21,如圖所示,在玻璃器皿三頸瓶中,先將二甲基乙醯胺(DMAc)與奈米鑽石溶液進行混合以形成一二甲基乙醯胺混合液,接下來,將一部分的二甲基乙醯胺混合液與全部的二苯胺進行混合以形成一第三混合液體,並將一部分的二酸酐與另一部分的二酸酐進行混合以形成一第四混合液體,接下來,剩餘的二酸酐與全部二甲基乙醯胺(DMAc)進行混合以形成複數個第五混合液體,再將第三混合液體、第四混合液體與第複數個五混合液體於真空環境下進行脫除氣泡,接下來,將脫泡完成的第三混合液體、第四混合液體與第五混合液體進行塗佈,最後以階段性升溫的方式加熱至300℃進行脫水環化反應,並除去二甲基乙醯胺(DMAc)以形成透明基板11,於此實施例中,以上混合動作會以
攪拌速度80rpm在室溫下進行並於三頸瓶內全程通入氮氣,避免水氣影響第三混合液體、第四混合液體與第五混合液體與奈米鑽石溶液的分子量多寡。
Referring to FIG. 8 , in the second preferred embodiment, the substrate is prepared in
請參閱圖9所示,於第三較佳實施例中,與第一較佳實施例的差別基板製成步驟21,如圖所示,在玻璃器皿三頸瓶中,將一部分的二甲基乙醯胺(DMAc)、全部的二苯胺與奈米鑽石溶液進行混合以形成一第六混合液體,再將全部的二酸酐與剩餘的二甲基乙醯胺(DMAc)進行混合以形成一第七混合液體,再將第六混合液體與第七混合液體於真空環境下進行脫除氣泡,而脫泡完成的第六混合液體與第七混合液體進行塗佈,最後階段性升溫的方式加熱至300℃進行脫水環化反應,並除去二甲基乙醯胺(DMAc)以形成透明基板11,於此實施例中,以上混合動作會以攪拌速度80rpm在室溫下進行並於三頸瓶內全程通入氮氣,避免水氣影響第六混合液體與第七混合液體的分子量多寡。
Referring to FIG. 9 , in the third preferred embodiment, a substrate is prepared in
請參閱圖10所示,於第四較佳實施例中,與第一較佳實施例的差別基板製成步驟21,如圖所示,在玻璃器皿三頸瓶中,將一部分的二甲基乙醯胺(DMAc)、一部分的二苯胺、一部分的二酸酐與一部分的奈米鑽石溶液進行混合以形成一第八混合液體,另將剩餘的二甲基乙醯胺(DMAc)、剩餘的二苯胺、剩餘的二酸酐與剩餘的奈米鑽石溶液進行混合以形成另兩個第八混合液體,再將所有的第八混合液體於真空環境下進行脫除氣泡,接下來,將脫泡完成的第八混合液體進行塗佈,最後以階段性升溫的方式加熱至300℃進行脫水環化反應,並除去二甲基乙醯胺(DMAc)以形成透明基板11,於此實施例中,以上混合動作會以攪拌速度80rpm在室溫下進行並於三頸瓶內全程通入氮氣,避免水氣影響第八混合液體的分子量多寡。
Referring to FIG. 10 , in the fourth preferred embodiment, a substrate is prepared in
請參閱圖11所示,於第五較佳實施例中,與第一較佳實施例的差別基板製成步驟21,如圖所示,在玻璃器皿三頸瓶中,先將二甲基乙醯胺(DMAc)與奈米鑽石溶液進行混合以形成二甲基乙醯胺混合液,再將一部分的二甲基乙醯胺(DMAc)與全部的二苯胺進行混合以形成一第九混合液體,接下來,將二酸酐區分為三個二酸酐,其中兩個二酸酐分別於二甲基乙醯胺混合液進行混合以形成兩個第十混合液體,再將最後一個二酸酐與剩餘的上述二甲基乙醯胺(DMAc)進行混合以形成一第十一混合液體,在真空環境下將上述第九混合液體、第十混合液體與第十一混合液體依序進行脫除氣泡,接下來,將脫泡完成的第九混合液體、第十混合液體與第十一混合液體進行塗佈,以階段性升溫的方式加熱至300℃進行脫水環化反應,並除去二甲基乙醯胺(DMAc)以形成上述透明基板11,於此實施例中,以上混合動作會以攪拌速度80rpm在室溫下進行並於三頸瓶內全程通入氮氣,避免水氣影響第九混合液體、第十混合液體與第十一混合液體的分子量多寡。
Referring to FIG. 11 , in the fifth preferred embodiment, the substrate is prepared in
以上所舉實施例,僅為方便說明本發明並非加以限制,在不離本發明精神範疇,熟悉此一行業技藝人士依本發明申請專利範圍及發明說明所作之各種簡易變形與修飾,均仍應含括於以下申請專利範圍中。 The above-mentioned embodiments are only for the convenience of explaining the present invention and are not intended to be limiting. Without departing from the spirit and scope of the present invention, various simple modifications and alterations made by skilled persons in the industry according to the scope of the present invention and the invention description should still be included in the scope of the following patent application.
1:透明軟板元件 1: Transparent soft board components
11:透明基板 11: Transparent substrate
12:透明接著材 12: Transparent adhesive material
13:第一透明電極 13: First transparent electrode
14:透明電阻材 14: Transparent resistor material
15:第二透明電極 15: Second transparent electrode
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW111130651A TWI844075B (en) | 2022-08-15 | 2022-08-15 | A transparent flexible board and method for manufacturing the transparent flexible board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW111130651A TWI844075B (en) | 2022-08-15 | 2022-08-15 | A transparent flexible board and method for manufacturing the transparent flexible board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202410500A TW202410500A (en) | 2024-03-01 |
| TWI844075B true TWI844075B (en) | 2024-06-01 |
Family
ID=91228347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111130651A TWI844075B (en) | 2022-08-15 | 2022-08-15 | A transparent flexible board and method for manufacturing the transparent flexible board |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI844075B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201429015A (en) * | 2012-10-09 | 2014-07-16 | Saudi Basic Ind Corp | Resistive memory device made of a single polymer material |
| US20180122856A1 (en) * | 2015-05-07 | 2018-05-03 | Institute of Microelectronics, Chinese Academy of Sciences | Nonvolatile Resistive Memory Device and Manufacturing Method Thereof |
| US20200312407A1 (en) * | 2017-09-29 | 2020-10-01 | National University Of Singapore | Resistive memory devices based on metal coordinated redox active ligands |
| TW202133430A (en) * | 2019-10-21 | 2021-09-01 | 德商馬克專利公司 | Electronic switching device |
| TW202210550A (en) * | 2020-09-01 | 2022-03-16 | 國立臺灣大學 | Flexible polymer blend, electronic device and resistive memory device comprising the same, and manufacturing method of resistive memory device |
-
2022
- 2022-08-15 TW TW111130651A patent/TWI844075B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201429015A (en) * | 2012-10-09 | 2014-07-16 | Saudi Basic Ind Corp | Resistive memory device made of a single polymer material |
| US20180122856A1 (en) * | 2015-05-07 | 2018-05-03 | Institute of Microelectronics, Chinese Academy of Sciences | Nonvolatile Resistive Memory Device and Manufacturing Method Thereof |
| US20200312407A1 (en) * | 2017-09-29 | 2020-10-01 | National University Of Singapore | Resistive memory devices based on metal coordinated redox active ligands |
| TW202133430A (en) * | 2019-10-21 | 2021-09-01 | 德商馬克專利公司 | Electronic switching device |
| TW202210550A (en) * | 2020-09-01 | 2022-03-16 | 國立臺灣大學 | Flexible polymer blend, electronic device and resistive memory device comprising the same, and manufacturing method of resistive memory device |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202410500A (en) | 2024-03-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101834015B (en) | Flexible transparent conducting film for polyimide substrate and preparation method thereof | |
| CN101337772B (en) | Method for preparing transparent rare-earth-doped bismuth titanate luminous ferro-electricity thin film | |
| JPS63258959A (en) | Coating liquid for metal oxide film formation | |
| TWI844075B (en) | A transparent flexible board and method for manufacturing the transparent flexible board | |
| JP2008273783A (en) | Coating composition for glass | |
| CN105420696B (en) | A kind of preparation method of tin oxide base film material | |
| CN113764121B (en) | Antimony-doped tin dioxide conductive film and preparation method and application thereof | |
| TWI761190B (en) | The structure and manufacture method of transparent flexible memory | |
| CN113549217B (en) | Polyimide precursor, resin composition containing same, polyimide resin film, and method for producing same | |
| CN104726851B (en) | A kind of method that sol-gal process prepares p-type SnO 2 thin film material | |
| CN101298367A (en) | Preparation of BLT composite glass phase ferroelectric film | |
| CN110357616A (en) | A kind of preparation method of Er ions bismuth sodium titanate-barium titanate flexibility ferroelectricity light-emitting film | |
| TWI375099B (en) | ||
| JP5465915B2 (en) | Method for forming thin film conductive film | |
| JP5232787B2 (en) | Manufacturing method of color filter | |
| CN110739397B (en) | A flexible display substrate, preparation method thereof and application thereof | |
| WO2011027866A1 (en) | Process for producing substrate and composition for use in same | |
| JPH052711B2 (en) | ||
| CN100336773C (en) | Ferroelectric membrane with constituents graded distribution and its preparation method | |
| CN102709196A (en) | Method for preparing hafnium-indium-zinc-oxide film by using sol-gel process | |
| TW201123214A (en) | Transparent conductive ZnO thin film doped with group IIIA elements and method for preparation thereof | |
| JPS59198606A (en) | Composition for forming transparent conductive film | |
| CN101452994A (en) | Non-volatile memory element and preparation method thereof | |
| TW201118890A (en) | Method of manufacturing transparent electro-conductive film | |
| CN120586686A (en) | A modified polyethersulfone composite membrane material and preparation method thereof |