TWI761190B - The structure and manufacture method of transparent flexible memory - Google Patents

Abstract

The present invention relates to the structure of a transparent flexible memory, comprising: a transparent substrate formed by the polyimide material; a transparent adhesive material for connecting the transparent substrate; a first transparent extrude for connecting the transparent adhesive material; a transparent electric assistant material for connecting the first transparent electrode; a second transparent electrode for connecting the transparent electric assistance material. The transparent electric assistant material is formed by either the metal oxidized material or the metal nitride material. The first transparent electrode and the second transparent electrode are formed by either the oxidized aluminium zinc or the oxidized indium tin. The transparent substrate of present invention is formed by the transparent polyimide material, and the transparent adhesive material is formed by the polyimide compound that comprising the siloxane material, and the transparent electric assistant material is formed by stacking a plurality of layers with the same material to form a gradational structure. Therefore, the integration of flexible memory is formed with full transparent characteristic.

Description

Fully transparent flexible memory structure and manufacturing method thereof

The present invention relates to a fully transparent flexible memory structure and a manufacturing method thereof, in particular to a structure formed by a polyimide material to produce a fully transparent flexible memory.

Generally speaking, a resistive memory is a non-volatile memory, and its components include a structure in which an upper metal electrode layer, a lower metal electrode layer and a memory layer are vertically stacked, wherein the memory layer is generally composed of transition metal oxide ( The resistance switching layer (resistance switching layer) composed of transition metal oxides (TMO) is used to switch the variable resistance between a high resistance state and a low resistance state under the application of different bias fields, and the transition The degree of oxidation of metal oxides is a major factor affecting the resistance switching characteristics and operating performance of resistive memory devices.

Among them, the materials of the resistance transition layer in most of the non-volatile memories on the market are metals with chromaticity, metal oxides or metal nitrides. To achieve a fully transparent non-volatile memory on the display of the appliance, it is necessary to improve the non-volatile memory.

The main purpose of the present invention is to define a transparent polyimide material to form a transparent substrate, and to use a polyimide compound containing a siloxane material to form a transparent adhesive material, so that the adhesion between the transparent adhesive material and the transparent electrode has a high degree of adhesion. The increase in the range allows the entire soft memory to achieve a fully transparent state.

The secondary purpose of the present invention is to define that the transparent resistive material is composed of one of metal oxide material or metal nitride material, and the transparent resistive material is formed by stacking a plurality of film layers of the same material into a gradient structure, and the gradient structure Each layer has a different degree of oxidation or nitridation.

In order to achieve the aforementioned purpose, the fully transparent flexible memory structure of the present invention includes: a transparent substrate, a transparent adhesive material, a first transparent electrode, a transparent resistive material and a second transparent electrode; the transparent substrate is made of polyimide The transparent adhesive material is connected to the transparent substrate and is composed of a polyimide compound synthesized by containing siloxane materials; the first transparent electrode is connected to the transparent adhesive material and is composed of aluminum oxide zinc or indium tin oxide It is composed of one of the materials; the transparent resistive material is connected to the first transparent electrode and is composed of one of a metal oxide material or a metal nitride material, and the transparent resistive material will form when subjected to different bias fields. A memory structure with adjustable resistance; and the second transparent electrode is connected to the transparent resistance material and is made of one of aluminum oxide zinc or indium tin oxide.

Wherein, the metal oxide material is formed by stacking a plurality of film layers of the same material to form a graded oxide film, and each film layer of the graded oxide film has a different oxidation degree.

Wherein, the metal nitride material is formed by stacking a plurality of film layers of the same material to form a graded nitride film, and each film layer of the graded nitride film has a different degree of nitridation.

In addition, both the first transparent electrode and the second transparent electrode are formed by stacking a plurality of layers of the same material to form a graded electrode, and each layer of the graded electrode is formed by mixing different metal material ratios.

In addition, there is a first contact area between the first transparent electrode and the transparent resistive material, and a second contact area between the second transparent electrode and the transparent resistive material, and the first contact area is larger than the second contact area area.

The present invention provides a method for manufacturing a fully transparent flexible memory structure, which is used for manufacturing the aforementioned fully transparent flexible memory. a polyimide solution, the polyimide solution is vacuum-dried, then mixed with the solvent and heated to form a transparent substrate composed of polyimide; an adhesive preparation step: mixing an organophosphorus diamine with An asymmetric diamine is mixed, and the temperature is lowered to maintain an ice bath temperature, and then a dianhydride and a polydimethylsiloxane are added to obtain the precursor polyamide containing siloxane material, and the polyamide The acid is heated and dried to form a transparent adhesive material, and then the transparent adhesive material is connected to the transparent substrate; an electrode fabrication step: adopting one of the methods of sputtering, thermal evaporation or sol-gel method to compound a A first transparent electrode composed of oxidized metal is formed on the transparent adhesive material; a resistance material manufacturing step: adopting one of sputtering method, heating evaporation method or sol-gel method to form a metal oxide material or metal nitrogen The transparent resistance material composed of chemical materials is formed on the first transparent electrode; an electrode remanufacturing step: adopting one of the methods of sputtering, heating evaporation or sol-gel method to form a first transparent electrode composed of composite oxide metal. Two transparent electrodes are formed on the transparent resistive material.

However, the polyimide solution is produced by heating to a first temperature, and the polyimide solution is vacuum dried at a second temperature to form a high molecular weight polyimide strip, which is transparent The substrate is produced by heating to a third temperature.

Wherein, the dianhydride is added in stages to form a first addition procedure and a second addition procedure, and the polydimethylsiloxane is between the first addition procedure and the second addition procedure Got added into.

In addition, the heating evaporation method in the electrode manufacturing step and the electrode re-manufacturing step is to use a vacuum evaporation machine to deposit a single indium tin oxide (ITO) material or indium tin oxide (In ₂ O ₃ ) and tin oxide. (SnO ₂ ) mixed material, indium tin oxide (ITO) film is formed by passing oxygen gas during evaporation; or indium oxide (In ₂ O ₃ ) and tin oxide (SnO ₂ ) mixed material using furnace tube , indium tin oxide (ITO) film is formed by introducing oxygen during high temperature heating.

And, the heating evaporation method in the resistance material manufacturing step is to use a vacuum evaporation machine to form a zinc oxide (ZnO) thin film by introducing oxygen into a single zinc (Zn) material or a zinc oxide (ZnO) material during evaporation. ; Or use a furnace tube to feed zinc (Zn) material or zinc oxide (ZnO) material at high temperature to form a zinc oxide (ZnO) thin film.

The present invention is characterized in that the adhesion between the transparent substrate and the first transparent electrode is improved by defining the transparent adhesive material to be connected between the transparent substrate and the first transparent electrode to be composed of a polyimide compound synthesized from a siloxane material. . And the transparent resistive material is formed by stacking a plurality of film layers of the same material to form a gradient structure. Each layer of the gradient structure has a different degree of oxidation or nitridation, so that the entire flexible memory can achieve a fully transparent state.

For the convenience of further understanding and understanding of the structure, use and characteristics of the present invention, a preferred embodiment is given, and the detailed description is as follows in conjunction with the drawings:

Please refer to FIG. 1 , in the first preferred embodiment, the fully transparent flexible memory structure 1 of the present invention is mainly composed of a transparent substrate 10 , a transparent adhesive material 20 , a first transparent electrode 30 , and a transparent resistive material 40 . and a second transparent electrode 50 .

Please refer to FIG. 1 to FIG. 4 , in this embodiment, the transparent substrate 10 is made of polyimide (PI) material; the transparent adhesive material 20 is disposed on a bottom of the first transparent electrode 30 The end 31 is connected to the transparent substrate 10, and the transparent bonding material 20 contains a polyimide compound synthesized by a siloxane material; wherein, compared with the synthesis without using a siloxane material, the transparent adhesive material 20 has a polyimide compound synthesized by a siloxane material. The adhesion of the polyimide compound to the transparent electrode is greatly improved.

However, the first transparent electrode 30 is smaller than the transparent substrate 10 and is aligned with the transparent resistive material 40 to connect to the transparent bonding material 20 , and the first transparent electrode 30 is made of aluminum zinc oxide (AZO) or indium tin oxide (ITO) one of the materials.

The transparent resistive material 40 has a first contact area A1 connecting the first transparent electrode 30 and a second contact area A2 connecting the second transparent electrode 50, and the first contact area A1 is larger than the second contact area A2, and The transparent resistive material 40 is made of one of a metal oxide material 41 or a metal nitride material 42 .

Wherein, in actual production, the material of the metal oxide material 41 may be one of zinc oxide (ZnO), aluminum oxide (Al ₂ O ₃ ), indium oxide (In ₂ O ₃ ) or tin oxide (SnO ₂ ). And the material of the metal nitride material 42 can be one of zinc nitride (Zn ₃ N ₂ ), aluminum nitride (AlN), indium nitride (InN) or tin nitride (Sn ₃ N ₄ ), and the above For example, only one of the materials of the metal oxide material 41 and the metal nitride material 42 is selected, but the selection of the materials is not limited.

Wherein, in the structure of the first preferred embodiment and the second preferred embodiment, the metal oxide material 41 has a first oxide film layer 411 and a second oxide film layer 412 to be stacked to form a graded oxide film 43 , The first oxide film layer 411 has the same metal composition material as the second oxide film layer 412 and a different oxidation degree of the second oxide film layer 412, and the metal nitride material 42 has a first nitride film The layer 421 and a second nitride film layer 422 are stacked to form a graded nitride film 44, and the first nitride film layer 421 has the same metal composition material as the second nitride film layer 422 and is different from the first nitride film layer 422. The degree of nitridation of the dinitride film layer 422 .

Furthermore, the transparent resistive material 40 generates different electron channels under the application of different bias fields, and the different electron channels are in one of the metal oxide material 41 or the metal nitride material 42 . Thereby, a memory effect is generated, so that the transparent resistive material 40 forms a memory structure 45 with adjustable resistance.

Please refer to FIG. 1 , FIG. 2 , FIG. 3 and FIG. 4 , in this embodiment, a bottom 51 of the second transparent electrode 50 is connected to the transparent resistive material 40 , and the second transparent electrode 50 is made of aluminum oxide Zinc (AZO) or one of indium tin oxide (ITO) materials.

Wherein, in the structure of this embodiment, the first transparent electrode 30 and the second transparent electrode 50 both have a first layer body (32, 52), a second layer body (33, 53) and a The third layers (34, 54) are stacked to form a graded electrode (35, 55), and the first layer (32, 52), the second layer (33, 53) and the third layer The three bodies (34, 54) have the same metal composition material and are mixed in different ratios.

However, the first and second oxide film layers 411, 412 and the first and second nitride film layers 421, 422 and the first, second and third layers are drawn in FIG. 2, FIG. 3 and FIG. 4 The state between the bodies (32, 52), (33, 53), (34, 54) is only a schematic diagram for reference. In actual implementation, the first and second oxide film layers 411, 412 The dinitride film layers 421 and 422 can form a graded film structure of the transparent resistive material 40 by continuously changing the degree of oxidation or nitridation of the film-forming material during the manufacturing process, so that the transparent resistive material 40 The material in the material continuously changes the degree of oxidation or nitridation of the material therein according to the position, and the first, second and third layer bodies (32, 52), (33, 53), (34, 54) penetrate During the manufacturing process, the proportions of different metal materials are continuously and gradually changed to form a layered structure of the first transparent electrode 30 and the second transparent electrode 50 , so that the first transparent electrode 30 and the second transparent electrode 50 are The material of , continuously changes the proportion of the material in it according to the position.

Please refer to FIG. 5 , in this embodiment, the manufacturing method of the fully transparent flexible memory structure 1 includes: a substrate fabrication step S1 , an adhesive material fabrication step S2 , an electrode fabrication step S3 , and an electrode fabrication step S3 . The resistance material is formed in step S4 and an electrode is formed in step S5.

In this embodiment, in the substrate manufacturing step S1, nitrogen gas is continuously introduced into the reaction vessel for a period of time, and then the air and water vapor in the reaction vessel are removed, and then an equimolar monocycloaliphatic dianhydride (BCDA) is added to the reaction vessel. An asymmetric diamine (3,4' ^- ODA) was placed in the reaction vessel and a mixed solvent of part of dimethylacetamide (DMAc) and γ-butyrolactone (GBL) was added to mix To uniformly stir and dissolve to form a polyamide solution generated by the aggregation of a plurality of monomers, wait until the monomers are completely dissolved and then add the remaining mixed solvent and the metered isoquinoline catalyst to the polyamide solution. , by slowly heating to a first temperature of about 180°C to react for a period of time to generate the polyimide solution, collecting the polyimide solution and placing it in methanol to rinse off unreacted monomers or The small molecular weight forms a high molecular weight polyimide strip, the high molecular weight polyimide strip is heated to a second temperature of about 130°C and vacuum dried in a vacuum oven, followed by the dried high molecular weight polyimide The strip is re-integrated into the mixed solvent of Dimethylacetamide (DMAc), and the solid content of the high-molecular-weight polyimide strip is controlled to be approximately 18%. After it is completely dissolved, it is coated on glass with a 250 μm doctor blade plate, and heated to a third temperature of about 210° C. to obtain the transparent substrate 10 composed of a polyimide film.

In another embodiment, in the substrate manufacturing step S1, high-purity nitrogen gas is continuously introduced into the reaction vessel of the triangular conical flask at room temperature for a period of time, and then the reaction vessel is kept dry, and the triangular conical flask is placed in a place with a stirring function. On the stirrer, put the mixed solvent of equimolar monodianhydride monomer (6FDA), monodiamine monomer (TFMB) and the dimethylacetamide (Dimethylacetamide, DMAc) in a triangular conical flask , obtain a polyimide solution (Polyamic acid, PAA) with a solid content approximately equal to 20% by continuous stirring and pass nitrogen for a period of time, and put the polyimide solution (Polyamic acid, PAA) Vacuum defoaming in a vacuum oven, and then coating on a glass plate with a 250 μm doctor blade after vacuum defoaming treatment, and placing the polyimide in a high-temperature circulating oven and heating to a temperature of about 300 ° C in stages to make the polyimide The acid solution (Polyamic acid, PAA) is closed to obtain the transparent substrate 10 composed of the polyimide film.

In this embodiment, in step S2 of forming the adhesive material, an organophosphorus diamine and an asymmetric diamine are mixed, and the temperature is lowered in an ice bath to maintain an ice bath temperature, and a majority of about 80% of the dianhydride is added. (IDPA) material reacts to form a first addition procedure, after a period of reaction, a polydimethylsiloxane (PDMS) solution is added, and finally about 20% of the remaining dianhydride (IDPA) material is added to mix A second addition procedure is formed to generate the precursor polyamide solution containing the siloxane material, wherein the operator visually observes the polyamide acid solution of the precursor containing the siloxane material. The viscosity, until the viscosity rises, remove the polyamide acid solution of the precursor containing the siloxane material from the ice bath, and continue to react for a period of time to produce a light yellow viscous solution of the polyamide acid precursor containing the siloxane material. , the light yellow viscous siloxane material-containing precursor polyamic acid solution has a solid content of approximately 15%, and the precursor polyamic acid solution containing siloxane material is coated on a PET sheet and Moved into a hot air circulation oven and heated to about 90°C for one hour, then removed from the hot air circulation oven to form a polyamide film, then, the polyamide film was removed from the PET sheet and fixed with a copper frame film mold, and then moved in again The hot air circulation oven is heated to about 300° C. to perform dehydration and ring closure to obtain the transparent adhesive 20 composed of the polyimide film containing the siloxane material.

In this embodiment, in the electrode fabrication step S3, a first transparent electrode 30 composed of a composite oxide metal is formed by one of sputtering method, heating evaporation method or sol-gel method (Sol-Gel). It is formed on the transparent adhesive material 20, and the resistance material is formed by one of sputtering method, heating evaporation method or sol-gel method (Sol-Gel) method in step S4 of forming a resistance material. The transparent resistive material 40 made of chemical material is formed on the first transparent electrode 30, and the electrode is remanufactured in step S5 by one of sputtering method, heating evaporation method or sol-gel method (Sol-Gel). The second transparent electrode 50 made of composite oxide metal is formed on the transparent resistive material 40 .

In this embodiment, one of the sputtering methods in the electrode forming step S3 and the electrode remanufacturing step S5 is to sputter indium tin oxide (ITO) by introducing argon and oxygen into a vacuum sputtering machine. IT0) target to form metal oxide film such as indium tin oxide (IT0) film, and another way is to simultaneously combine indium oxide (In ₂ O ₃ ) target and tin oxide (SnO ₂ ) target and other metal oxide targets Metal oxide films such as indium tin oxide (IT0) films are formed by sputtering.

Among them, one of the heating evaporation methods in the electrode fabrication step S3 and the electrode refabrication step S5 is to introduce oxygen into a vacuum evaporation machine by means of evaporation to make a single indium tin oxide (ITO) material or Metal oxide materials such as mixed materials of indium tin oxide (In ₂ O ₃ ) and tin oxide (SnO ₂ ) are evaporated to form metal oxide films such as indium tin oxide (ITO) films, and another way is to use furnace tubes to Heating to increase the temperature, oxygen is introduced at high temperature, and at the same time, metal oxide materials such as mixed materials of indium oxide (In ₂ O ₃ ) and tin oxide (SnO ₂ ) are formed into metal oxide materials such as indium tin oxide (ITO) thin films film.

One of the methods of the sol-gel method in the electrode forming step S3 and the electrode remanufacturing step S5 is to dope a precursor of indium chloride (In ₂ Cl ₃ ) containing 7at% tin ( Sn) and tin chloride (SnCl ₄ ) are mixed to form a solute, the solute is mixed with a solvent such as ethylene glycol and heated to form a solution, and the solution is then spin-coated at a rate of about Spin coating at 2000 rpm and heat to 200°C at a rate of about 300°C per hour for one hour, then increase the temperature to 600°C for one hour, and then form metal oxides such as indium tin oxide (ITO) films. material film.

In another embodiment, one of the methods of the sol-gel method in the electrode fabrication step S3 and the electrode refabrication step S5 is to dissolve In(NO ₃ ) ₃ ·2H ₂ O in acetone in nitrogen. The precursor formed from acetylacetone solution is mixed with tin chloride (SnCl ₄ ) dissolved in ethanol solution to form the solute, wherein the tin chloride (SnCl ₄ ) contains 8-15wt% tin ( Sn), the solute is added with the solvent of acetone to mix uniformly to form the solution, and then the solution is coated at a speed of about 8.6 cm per minute using the dipping method and heated to about 500 ° C for 20 minutes. Metal oxide films such as indium tin oxide (IT0) films.

In yet another embodiment, one of the sol-gel methods in the electrode fabrication step S3 and the electrode refabrication step S5 is to dope the precursor of indium acetate containing 4 mol% tin (Sn). ) tin octylate to form the solute, the solute is added with n-propanol diethanolamine, the solvent and the DEA additive to mix uniformly to form the solution, and then the solution is coated at a speed of about 6.0 cm per minute using the dipping method and heated to about 650°C for 30 minutes and then placed in nitrogen to form metal oxide films such as indium tin oxide (IT0) films.

In this embodiment, one of the ways of making the resistance material by the sputtering method in step S4 is to pass argon and oxygen into the vacuum sputtering machine by sputtering to form the zinc (Zn) target or zinc oxide (ZnO). Metal targets such as ZnO) targets or metal oxide targets are sputtered to form metal oxide films such as zinc oxide (ZnO) films.

Wherein, one of the methods of the heating evaporation method in the manufacturing step S4 of the resistance material is to introduce oxygen into a vacuum evaporation machine by means of evaporation to separate metal materials such as a single zinc (Zn) material or a zinc oxide (ZnO) material. Or metal oxide materials are evaporated to form metal oxide films such as zinc oxide (ZnO) films, and another method is to use a furnace tube to heat and increase the temperature to heat the temperature to a temperature of about 100 ℃ ~ 500 ℃. At the same time, a metal material such as a zinc (Zn) material or a zinc oxide (ZnO) material or a metal oxide material is formed into a metal oxide material film such as a zinc oxide (ZnO) film.

Wherein, one of the heating evaporation methods in the resistance material manufacturing step S4 is to use the sol-gel method to use zinc acetate (Zn(CH ₃ COO) ₂ ·2H ₂ O) containing two crystal waters as The solute is obtained by adding the solute into 99.5% anhydrous alcohol (ethanol, C ₂ H ₅ OH) to prepare a concentration of 0.05 molar, and placing it on a thermostatic mixer to heat to about 60° C. and stirring continuously for two hours. Zinc oxide (ZnO) is a clear and transparent solution, and then the solution is coated at a speed of about 2000 revolutions per minute and heated to 200 ° C at a rate of about 200 ° C per hour to continue drying for one hour to form zinc oxide (ZnO ) film and other metal oxide films.

The above-mentioned embodiments are only for the convenience of illustrating the present invention and are not intended to limit it. Without departing from the spirit of the present invention, various simple deformations and modifications made by those skilled in the industry according to the scope of the patent application of the present invention and the description of the invention should still include Included in the following patent applications.

1: Fully transparent soft memory structure 10: Transparent substrate 20: Transparent adhesive material 30: The first transparent electrode 31: Bottom 32: first layer body 33: Second layer body 34: The third body 35: Gradient electrode 40: Transparent resistance material 41: Metal oxide material 411: the first oxide film layer 412: the second oxide film layer 42: Metal nitride material 421: the first nitride film layer 422: the second nitride film layer 43: Gradient oxide film 44: Gradient Nitride Film 45: Memory structure of adjustable variable resistor 50: Second transparent electrode 51: Bottom 52: first layer body 53: Second layer body 54: The third body 55: Gradient electrode A1: The first contact area A2: Second contact area S1: Substrate fabrication step S2: Adhesive production step S3: electrode fabrication step S4: Steps of making resistance material S5: Electrode Remanufacturing Step

FIG. 1 is a schematic structural diagram of the fully transparent flexible memory structure of the present invention in the first preferred embodiment; FIG. 2 is an exploded view of the fully transparent flexible memory structure of the present invention in the first preferred embodiment; 3 is a cross-sectional view of the fully transparent flexible memory structure of the present invention in the first preferred embodiment; 4 is a cross-sectional view of the fully transparent flexible memory structure of the present invention in a second preferred embodiment; and FIG. 5 is a schematic diagram showing the steps of the manufacturing method of the fully transparent flexible memory structure according to the first preferred embodiment of the present invention.

1: Fully transparent soft memory structure

10: Transparent substrate

20: Transparent adhesive material

30: The first transparent electrode

31: Bottom

40: Transparent resistance material

50: Second transparent electrode

51: Bottom

Claims (9)

A fully transparent flexible memory structure, comprising: a transparent substrate composed of a polyimide material; a transparent adhesive material connected to the transparent substrate and composed of a polyimide compound synthesized from a siloxane material; A first transparent electrode, connected to the transparent bonding material, is made of one of aluminum oxide zinc or indium tin oxide; a transparent resistive material, connected to the first transparent electrode, made of a metal oxide material or a metal nitride The metal nitride material is composed of a plurality of film layers of the same material to form a graded nitride film, and each film layer of the graded nitride film has a different degree of nitridation, and then Or the transparent resistive material will form a memory structure with adjustable resistance when subjected to different bias fields; and a second transparent electrode, connected to the transparent resistive material, is made of one of aluminum oxide zinc or indium tin oxide. material composition. The fully transparent flexible memory structure according to claim 1, wherein the metal oxide material is formed by stacking a plurality of film layers of the same material to form a graded oxide film, and each film layer of the graded oxide film has a different degree of oxidation. The fully transparent flexible memory structure of claim 1, wherein the first transparent electrode and the second transparent electrode are both made of a plurality of layers of the same material to form a graded electrode, and each layer of the graded electrode is The body is composed of a mixture of different metal material ratios. The fully transparent flexible memory structure of claim 1, wherein a first contact area is formed between the first transparent electrode and the transparent resistive material, and a second contact area is formed between the second transparent electrode and the transparent resistive material Contact area, the first contact area is larger than the second contact area. A method for manufacturing a fully transparent flexible memory structure, comprising: a substrate manufacturing step: mixing an alicyclic dianhydride and an asymmetric diamine and heating a solvent to form a polyimide solution, and the polyimide The amine acid solution is vacuum-dried, then mixed with the solvent and heated to form a transparent substrate composed of polyimide; an adhesive preparation step: mixing an organophosphorus diamine and an asymmetric diamine, and cooling and maintaining an ice temperature of the bath, then add a dianhydride and a polydimethylsiloxane to obtain the precursor polyamide containing siloxane material, heat and dry the polyamide to form a transparent adhesive, and then apply the transparent Then the material is connected to the transparent substrate; an electrode forming step: using one of sputtering method, heating evaporation method or sol-gel method to form a first transparent electrode composed of composite oxide metal on the transparent substrate material; a resistance material manufacturing step: adopting one of sputtering method, heating evaporation method or sol-gel method to form a transparent resistance material composed of metal oxide material or metal nitride material on the first transparent electrode; an electrode remanufacturing step: forming a second transparent electrode composed of composite oxide metal on the transparent resistive material by one of sputtering method, heating evaporation method or sol-gel method. The method for manufacturing a fully transparent flexible memory structure according to claim 5, wherein the polyimide solution is produced by heating to a first temperature, and the polyimide solution is produced at a second temperature Vacuum drying forms a high molecular weight polyimide strip, and the transparent substrate is produced by heating to a third temperature. The method for manufacturing a fully transparent flexible memory structure according to claim 5, wherein the dianhydride is added in stages to form a first adding process and a second adding process, and the polydimethylsiloxane is is added between the first addition procedure and the second addition procedure. The method for manufacturing a fully transparent flexible memory structure according to claim 5, wherein the heating evaporation method in the electrode manufacturing step and the electrode remanufacturing step is to use a vacuum evaporation machine to deposit a single indium tin oxide (ITO) material Or a mixed material of indium tin oxide (In ₂ O ₃ ) and tin oxide (SnO ₂ ) is formed by introducing oxygen into the indium tin oxide (ITO) film during evaporation; The mixed material of (In ₂ O ₃ ) and tin oxide (SnO ₂ ) is heated at high temperature by introducing oxygen to form an indium tin oxide (ITO) film. The method for manufacturing a fully transparent flexible memory structure according to claim 5, wherein the heating evaporation method in the resistance material manufacturing step is to use a vacuum evaporation machine to separate a single zinc (Zn) material or a zinc oxide (ZnO) material , during evaporation, oxygen is introduced to form a zinc oxide (ZnO) film; or a furnace tube is used to form zinc (Zn) material or zinc oxide (ZnO) material, and oxygen is introduced into zinc oxide (ZnO) when heated at high temperature. film.

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