TWI843975B - Roughening of copper foil, copper-clad laminates and printed circuit boards - Google Patents
Roughening of copper foil, copper-clad laminates and printed circuit boards Download PDFInfo
- Publication number
- TWI843975B TWI843975B TW110143949A TW110143949A TWI843975B TW I843975 B TWI843975 B TW I843975B TW 110143949 A TW110143949 A TW 110143949A TW 110143949 A TW110143949 A TW 110143949A TW I843975 B TWI843975 B TW I843975B
- Authority
- TW
- Taiwan
- Prior art keywords
- roughened
- copper foil
- copper
- treatment
- particles
- Prior art date
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 227
- 239000011889 copper foil Substances 0.000 title claims abstract description 200
- 238000007788 roughening Methods 0.000 title description 67
- 239000002245 particle Substances 0.000 claims abstract description 104
- 239000010410 layer Substances 0.000 claims description 50
- 239000000126 substance Substances 0.000 claims description 20
- 239000012790 adhesive layer Substances 0.000 claims description 12
- 238000011161 development Methods 0.000 claims description 11
- 230000003746 surface roughness Effects 0.000 claims description 4
- 239000011347 resin Substances 0.000 abstract description 56
- 229920005989 resin Polymers 0.000 abstract description 56
- 238000013508 migration Methods 0.000 abstract description 33
- 230000005012 migration Effects 0.000 abstract description 33
- 230000005540 biological transmission Effects 0.000 abstract description 31
- 238000004519 manufacturing process Methods 0.000 abstract description 27
- 238000011282 treatment Methods 0.000 description 103
- 238000000576 coating method Methods 0.000 description 63
- 239000011248 coating agent Substances 0.000 description 62
- 239000011701 zinc Substances 0.000 description 53
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 52
- 229910052725 zinc Inorganic materials 0.000 description 52
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 50
- 238000007747 plating Methods 0.000 description 48
- 230000000052 comparative effect Effects 0.000 description 39
- 239000010949 copper Substances 0.000 description 28
- 229910052802 copper Inorganic materials 0.000 description 27
- 239000000758 substrate Substances 0.000 description 25
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 22
- 238000009713 electroplating Methods 0.000 description 22
- 238000005554 pickling Methods 0.000 description 21
- 238000000034 method Methods 0.000 description 20
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 15
- 238000000151 deposition Methods 0.000 description 15
- 239000000243 solution Substances 0.000 description 15
- 239000006087 Silane Coupling Agent Substances 0.000 description 14
- 230000008021 deposition Effects 0.000 description 14
- 238000005530 etching Methods 0.000 description 14
- 238000012545 processing Methods 0.000 description 14
- 229910000365 copper sulfate Inorganic materials 0.000 description 13
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 13
- 230000003647 oxidation Effects 0.000 description 12
- 238000007254 oxidation reaction Methods 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 description 7
- 239000003792 electrolyte Substances 0.000 description 7
- MTRFEWTWIPAXLG-UHFFFAOYSA-N 9-phenylacridine Chemical compound C1=CC=CC=C1C1=C(C=CC=C2)C2=NC2=CC=CC=C12 MTRFEWTWIPAXLG-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011888 foil Substances 0.000 description 5
- 238000007654 immersion Methods 0.000 description 5
- 150000007522 mineralic acids Chemical class 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910001369 Brass Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000007767 bonding agent Substances 0.000 description 3
- 239000010951 brass Substances 0.000 description 3
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229920001955 polyphenylene ether Polymers 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 239000002335 surface treatment layer Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 235000018660 ammonium molybdate Nutrition 0.000 description 2
- 239000011609 ammonium molybdate Substances 0.000 description 2
- APUPEJJSWDHEBO-UHFFFAOYSA-P ammonium molybdate Chemical compound [NH4+].[NH4+].[O-][Mo]([O-])(=O)=O APUPEJJSWDHEBO-UHFFFAOYSA-P 0.000 description 2
- 229940010552 ammonium molybdate Drugs 0.000 description 2
- 238000004873 anchoring Methods 0.000 description 2
- 239000013043 chemical agent Substances 0.000 description 2
- 230000002500 effect on skin Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- QELJHCBNGDEXLD-UHFFFAOYSA-N nickel zinc Chemical compound [Ni].[Zn] QELJHCBNGDEXLD-UHFFFAOYSA-N 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000002203 pretreatment Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- -1 "powder falling" Chemical compound 0.000 description 1
- UGJPMSBRYUISGR-UHFFFAOYSA-N 1H-pyrrole silane Chemical compound [SiH4].N1C=CC=C1 UGJPMSBRYUISGR-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 1
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- HSSJULAPNNGXFW-UHFFFAOYSA-N [Co].[Zn] Chemical compound [Co].[Zn] HSSJULAPNNGXFW-UHFFFAOYSA-N 0.000 description 1
- GDFUXPFQUMDNJA-UHFFFAOYSA-N [SiH4].C=CC1=CC=CC=C1 Chemical compound [SiH4].C=CC1=CC=CC=C1 GDFUXPFQUMDNJA-UHFFFAOYSA-N 0.000 description 1
- AHGFXGSMYLFWEC-UHFFFAOYSA-N [SiH4].CC(=C)C(O)=O Chemical compound [SiH4].CC(=C)C(O)=O AHGFXGSMYLFWEC-UHFFFAOYSA-N 0.000 description 1
- NOKSMMGULAYSTD-UHFFFAOYSA-N [SiH4].N=C=O Chemical compound [SiH4].N=C=O NOKSMMGULAYSTD-UHFFFAOYSA-N 0.000 description 1
- NOHQTLHHNIKWBA-UHFFFAOYSA-N [SiH4].NC(=O)N Chemical compound [SiH4].NC(=O)N NOHQTLHHNIKWBA-UHFFFAOYSA-N 0.000 description 1
- SBTFPXMZEDYHLN-UHFFFAOYSA-N [V+5].[Zn+2] Chemical compound [V+5].[Zn+2] SBTFPXMZEDYHLN-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- YXMVRBZGTJFMLH-UHFFFAOYSA-N butylsilane Chemical compound CCCC[SiH3] YXMVRBZGTJFMLH-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- DQIPXGFHRRCVHY-UHFFFAOYSA-N chromium zinc Chemical compound [Cr].[Zn] DQIPXGFHRRCVHY-UHFFFAOYSA-N 0.000 description 1
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- BXKDSDJJOVIHMX-UHFFFAOYSA-N edrophonium chloride Chemical compound [Cl-].CC[N+](C)(C)C1=CC=CC(O)=C1 BXKDSDJJOVIHMX-UHFFFAOYSA-N 0.000 description 1
- 238000000866 electrolytic etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- CSKVLUWCGPWCQR-UHFFFAOYSA-M sodium;3-hydroxypropane-1-sulfonate Chemical compound [Na+].OCCCS([O-])(=O)=O CSKVLUWCGPWCQR-UHFFFAOYSA-M 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/16—Electroplating with layers of varying thickness
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroplating Methods And Accessories (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Laminated Bodies (AREA)
Abstract
本發明提供一種粗糙化處理銅箔,其能夠製造出與樹脂的密合性優異、傳輸損耗小且不易發生由於遷移所造成的短路的印刷線路板等。本發明的粗糙化處理銅箔在至少其中一面具有粗糙化處理面,該粗糙化處理面形成有複數個粗糙化顆粒(1),在粗糙化顆粒(1)的表面形成有凹凸。並且,使用三維白光干涉型顯微鏡測定出的粗糙化處理面的界面的展開面積比Sdr為1000%以上且5000%以下,且粗糙化處理面的算術平均粗糙度Sa為0.04μm以上且0.6μm以下。The present invention provides a roughened copper foil, which can be used to manufacture printed circuit boards and the like that have excellent adhesion to resin, low transmission loss, and are not prone to short circuits caused by migration. The roughened copper foil of the present invention has a roughened surface on at least one side, and the roughened surface is formed with a plurality of roughened particles (1), and the surface of the roughened particles (1) is formed with bumps and depressions. Furthermore, the developed area ratio Sdr of the interface of the roughened surface measured using a three-dimensional white light interference microscope is greater than 1000% and less than 5000%, and the arithmetic mean roughness Sa of the roughened surface is greater than 0.04 μm and less than 0.6 μm.
Description
本發明關於一種能夠適合使用於製造印刷線路板等的粗糙化處理銅箔、以及使用該粗糙化處理銅箔之覆銅積層板及印刷線路板。The present invention relates to a roughened copper foil which can be used to manufacture printed circuit boards, etc., and a copper-clad laminate and a printed circuit board using the roughened copper foil.
覆銅積層板可藉由將銅箔與樹脂製的基板進行壓接來製造,但是藉由施以粗糙化處理,並將樹脂製的基板壓接在經粗糙化的粗糙化處理面,可使銅箔與樹脂製的基板的密合性提升,該粗糙化處理是將粗糙化顆粒形成於銅箔的表面而使銅箔的表面粗糙化。A copper-clad laminate can be manufactured by pressing a copper foil and a resin substrate together. However, the adhesion between the copper foil and the resin substrate can be improved by applying a roughening treatment and pressing the resin substrate onto the roughened surface. The roughening treatment is to form roughening particles on the surface of the copper foil to roughen the surface of the copper foil.
只要粗糙化顆粒的高度(亦即,為在施以粗糙化處理前的銅箔的表面與以從施以該粗糙化處理前的銅箔的表面突出的方式所形成的粗糙化顆粒的前端之間的距離,以下亦記載為「粗糙化高度」)越大,就能夠使得銅箔與樹脂製的基板的密合性更大幅地提升。然而,若使用粗糙化高度大的銅箔來製造印刷線路板,會有由於表皮效應造成傳輸損耗變大這樣的問題。亦即,銅箔與樹脂製的基板的密合性與傳輸損耗呈現出一抵換關係。As the height of the roughened particles (i.e., the distance between the surface of the copper foil before the roughening treatment and the front end of the roughened particles protruding from the surface of the copper foil before the roughening treatment, hereinafter also referred to as "roughening height") increases, the adhesion between the copper foil and the resin substrate can be greatly improved. However, if a copper foil with a large roughening height is used to manufacture a printed circuit board, there is a problem that the transmission loss increases due to the skin effect. In other words, the adhesion between the copper foil and the resin substrate and the transmission loss show a trade-off relationship.
另一方面,隨著近年來的印刷線路板朝向高頻對應化發展,若為了降低傳輸損耗而降低粗糙化高度,也出現了下述新興的問題:在作成印刷線路板時會容易產生遷移(migration),而印刷線路板的電路會變得容易發生短路。On the other hand, as printed circuit boards have been developed towards high-frequency support in recent years, if the roughening height is reduced in order to reduce transmission loss, the following new problem has also emerged: migration is likely to occur when the printed circuit board is made, and the circuit of the printed circuit board becomes prone to short circuits.
專利文獻1中揭示了一種與樹脂製的基板的密合性高的銅箔,專利文獻2中揭示了一種能夠製造傳輸損耗小的印刷線路板的銅箔。然而,專利文獻1、2所揭示的銅箔仍有無法同時滿足密合性與傳輸損耗這兩者特性的情況。此外,也會有無法製造出不易發生遷移的印刷線路板的疑慮。 [先前技術文獻] (專利文獻) Patent document 1 discloses a copper foil having high adhesion to a resin substrate, and Patent document 2 discloses a copper foil capable of manufacturing a printed circuit board with low transmission loss. However, the copper foil disclosed in Patent documents 1 and 2 still cannot satisfy both the characteristics of adhesion and transmission loss at the same time. In addition, there is a concern that a printed circuit board that is not prone to migration cannot be manufactured. [Prior technical document] (Patent document)
專利文獻1:日本專利公報第6632739號。 專利文獻2:日本專利公報第6462961號。 Patent document 1: Japanese Patent Gazette No. 6632739. Patent document 2: Japanese Patent Gazette No. 6462961.
[發明所欲解決的問題] 本發明所欲解決的問題在於提供一種粗糙化處理銅箔及覆銅積層板,其能夠製造出與樹脂的密合性優異、傳輸損耗小且不易發生由於遷移所造成的短路的印刷線路板等。此外,本發明所欲一併地解決的問題在於提供一種印刷線路板,其與樹脂的密合性優異、傳輸損耗小且不易發生由於遷移所造成的短路。 [解決問題的技術手段] [Problem to be solved by the invention] The problem to be solved by the present invention is to provide a roughened copper foil and a copper-clad laminate, which can produce a printed circuit board with excellent adhesion to resin, low transmission loss, and not prone to short circuits caused by migration. In addition, the problem to be solved by the present invention is to provide a printed circuit board with excellent adhesion to resin, low transmission loss, and not prone to short circuits caused by migration. [Technical means for solving the problem]
本發明的一態樣的粗糙化處理銅箔是至少其中一面具有粗糙化處理面之粗糙化處理銅箔,該粗糙化處理面形成有複數個粗糙化顆粒,該粗糙化處理銅箔的特徵在於:在粗糙化顆粒的表面形成有凹凸,使用三維白光干涉型顯微鏡測定出的粗糙化處理面的界面的展開面積比Sdr為1000%以上且5000%以下,且粗糙化處理面的算術平均粗糙度Sa為0.04μm以上且0.6μm以下。A roughened copper foil of one aspect of the present invention is a roughened copper foil having a roughened surface on at least one side, wherein the roughened surface is formed with a plurality of roughened particles. The roughened copper foil is characterized in that: projections and depressions are formed on the surface of the roughened particles, an area ratio Sdr of an interface of the roughened surface measured using a three-dimensional white light interference microscope is greater than 1000% and less than 5000%, and an arithmetic mean roughness Sa of the roughened surface is greater than 0.04 μm and less than 0.6 μm.
此外,本發明的其他態樣的覆銅積層板的特徵在於:具備上述一態樣的粗糙化處理銅箔。 進一步,本發明的其他態樣的印刷線路板的特徵在於:具備上述一態樣的粗糙化處理銅箔。 In addition, the copper-clad laminate of other aspects of the present invention is characterized in that it has the roughened copper foil of the above-mentioned aspect. Further, the printed circuit board of other aspects of the present invention is characterized in that it has the roughened copper foil of the above-mentioned aspect.
先前技術的國際公開第2019/188712號及日本專利公報第6430092號中揭示了一種銅箔,該銅箔是利用電解鍍覆將被稱為大致球狀突起的突起物形成於銅箔的粗糙化顆粒的表面,藉此在粗糙化顆粒的表面形成凹凸而成。該等先前技術中,揭示了藉由在粗糙化顆粒的表面的凹凸,即便粗糙化顆粒小仍可獲得高機械強度這樣的技術特徵。International Publication No. 2019/188712 and Japanese Patent Gazette No. 6430092 of the prior art disclose a copper foil, which is formed by electrolytically plating protrusions called roughly spherical protrusions on the surface of roughened particles of the copper foil, thereby forming concavities and convexities on the surface of the roughened particles. These prior arts disclose a technical feature that high mechanical strength can be obtained even if the roughened particles are small by forming concavities and convexities on the surface of the roughened particles.
然而,認為當利用電解鍍覆形成大致球狀突起時,電流會集中於在集中的粗糙化顆粒的頂點部來進行鍍覆。作為其結果,會有整體的粗糙化顆粒的高度會部分地變大,而傳輸特性變差這樣的疑慮。 此外,因為國際公開第2019/188712號及日本專利公報第6430092號中沒有記載有關傳輸特性和起因於銅箔與樹脂的密合面的界面長度所造成的遷移的記載,所以無法確認是否已解決本發明所欲解決的問題。 However, it is believed that when electrolytic plating is used to form roughly spherical protrusions, the current will be concentrated on the top of the concentrated roughened particles for plating. As a result, there is a concern that the height of the overall roughened particles will partially increase, and the transmission characteristics will deteriorate. In addition, since International Publication No. 2019/188712 and Japanese Patent Gazette No. 6430092 do not record the transmission characteristics and the migration caused by the interface length of the close contact surface between the copper foil and the resin, it is impossible to confirm whether the problem to be solved by the present invention has been solved.
另一方面,在本發明的一態樣的粗糙化處理銅箔中,對於粗糙化顆粒的表面的凹凸的形成,能夠藉由如後述那般在溶液中的蝕刻處理來實行,因此能夠將凹凸形成於粗糙化顆粒的表面而不會使粗糙化顆粒的高度變大。 亦即,比起上述2件先前技術所揭示的銅箔,本發明的一態樣的粗糙化處理銅箔,能夠在維持傳輸特性小的情況下使對樹脂的密合性提升。此外,藉由將凹凸形成在粗糙化顆粒的整個表面或部分的表面,粗糙化顆粒的表面積也會變大,因此能夠製造出不易發生由於遷移所造成的短路的印刷線路板等。 [發明的效果] On the other hand, in the roughened copper foil of one aspect of the present invention, the formation of the unevenness on the surface of the roughened particles can be carried out by etching in a solution as described later, so that the unevenness can be formed on the surface of the roughened particles without increasing the height of the roughened particles. That is, compared with the copper foil disclosed in the above two prior arts, the roughened copper foil of one aspect of the present invention can improve the adhesion to the resin while maintaining a small transmission characteristic. In addition, by forming the unevenness on the entire surface or part of the surface of the roughened particles, the surface area of the roughened particles will also be increased, so that a printed circuit board, etc., which is not prone to short circuits caused by migration, can be manufactured. [Effect of the invention]
本發明的粗糙化銅箔及覆銅積層板,能夠製造出與樹脂的密合性優異、傳輸損耗小且不易發生由於遷移所造成的短路的印刷線路板等。本發明的印刷線路板與樹脂的密合性優異、傳輸損耗小且不易發生由於遷移所造成的短路。The roughened copper foil and copper-clad laminate of the present invention can be used to manufacture printed circuit boards that have excellent adhesion to resin, low transmission loss, and are not prone to short circuits caused by migration. The printed circuit board of the present invention has excellent adhesion to resin, low transmission loss, and is not prone to short circuits caused by migration.
說明本發明的一實施形態。再者,以下說明的實施形態是表示本發明的一例。此外,能夠針對本實施形態施加各種變化或改良,並且施加這樣的變化或改良而成的形態亦包含在本發明中。An embodiment of the present invention is described. The embodiment described below is an example of the present invention. In addition, various changes or improvements can be added to the embodiment, and the form obtained by adding such changes or improvements is also included in the present invention.
本發明的一實施形態的粗糙化處理銅箔,是至少其中一面具有粗糙化處理面之粗糙化處理銅箔,該粗糙化處理面形成有複數個粗糙化顆粒,該粗糙化處理銅箔中,在粗糙化顆粒的表面形成有凹凸,使用三維白光干涉型顯微鏡測定出的粗糙化處理面的界面的展開面積比Sdr為1000%以上且5000%以下,且粗糙化處理面的算術平均粗糙度Sa為0.04μm以上且0.6μm以下。A roughened copper foil of one embodiment of the present invention is a roughened copper foil having a roughened surface on at least one side, wherein the roughened surface is formed with a plurality of roughened particles, and in the roughened copper foil, projections and depressions are formed on the surfaces of the roughened particles, and an developed area ratio Sdr of the interface of the roughened surface measured using a three-dimensional white light interference microscope is greater than 1000% and less than 5000%, and an arithmetic mean roughness Sa of the roughened surface is greater than 0.04 μm and less than 0.6 μm.
藉由這樣的構成,本實施形態的粗糙化處理銅箔能夠製造出與樹脂的密合性優異、傳輸損耗小且不易發生由於遷移所造成的短路的印刷線路板等。因而,本實施形態的粗糙化處理銅箔能夠適合地用於製造覆銅積層板和印刷線路板。With such a structure, the roughened copper foil of this embodiment can be used to manufacture printed circuit boards with excellent adhesion to resin, low transmission loss, and low risk of short circuits caused by migration. Therefore, the roughened copper foil of this embodiment can be suitably used to manufacture copper-clad laminates and printed circuit boards.
亦即,本實施形態的覆銅積層板具備本實施形態的粗糙化處理銅箔。只要使用本實施形態的粗糙化處理銅箔,即能夠製造出與樹脂的密合性優異的覆銅積層板。此外,本實施形態的印刷線路板具備本實施形態的覆銅積層板。只要使用本實施形態的粗糙化處理銅箔、覆銅積層板,即能夠製造出與樹脂的密合性優異、傳輸損耗小且不易發生由於遷移所造成的短路的印刷線路板。That is, the copper-clad laminate of the present embodiment has the roughened copper foil of the present embodiment. By using the roughened copper foil of the present embodiment, a copper-clad laminate having excellent adhesion to the resin can be manufactured. In addition, the printed circuit board of the present embodiment has the copper-clad laminate of the present embodiment. By using the roughened copper foil and the copper-clad laminate of the present embodiment, a printed circuit board having excellent adhesion to the resin, low transmission loss and not prone to short circuits caused by migration can be manufactured.
以下,針對本實施形態的粗糙化處理銅箔,一邊參照圖式一邊詳細地說明。 本實施形態的粗糙化處理銅箔至少在其中一面具有藉由粗糙化處理進行粗糙化而成的粗糙化處理面。該粗糙化處理,是將複數個粗糙化顆粒1形成於粗糙化處理銅箔的原料即銅箔(以下,有時亦記載為「原料銅箔」)的表面3的處理,並且是藉由粗糙化處理使粗糙化處理面形成於粗糙化處理銅箔的表面。 The roughened copper foil of this embodiment is described in detail below with reference to the drawings. The roughened copper foil of this embodiment has a roughened surface roughened by roughening treatment on at least one side. The roughening treatment is a treatment in which a plurality of roughening particles 1 are formed on the surface 3 of the raw material of the roughened copper foil (hereinafter, sometimes also described as "raw material copper foil"), and the roughened surface is formed on the surface of the roughened copper foil by the roughening treatment.
如第1圖所示,粗糙化顆粒1是以從原料銅箔的表面3突出的方式所形成。原料銅箔的表面3與粗糙化顆粒1的前端之間的距離H為粗糙化高度。並且,在粗糙化顆粒1的表面形成有凹凸。第1圖的粗糙化處理銅箔中,藉由蝕刻等去除粗糙化顆粒1的部分的表面,其結果,粗糙化顆粒1的表面形成有複數個凸部1a,而藉此形成有凹凸。As shown in FIG. 1, the roughened particles 1 are formed in a manner protruding from the surface 3 of the raw copper foil. The distance H between the surface 3 of the raw copper foil and the front end of the roughened particles 1 is the roughening height. In addition, the surface of the roughened particles 1 is formed with concavities and convexities. In the roughened copper foil of FIG. 1, the surface of the roughened particles 1 is partially removed by etching or the like, and as a result, a plurality of convex portions 1a are formed on the surface of the roughened particles 1, thereby forming concavities and convexities.
粗糙化顆粒1較佳是藉由金屬銅或銅合金來形成。此外,作為粗糙化顆粒1的形狀,可列舉例如前端尖銳的凸形狀,作為具體例可列舉:圓錐形、三角錐形、四角錐形、橢圓體形及半球形。或者可列舉下述形狀:前端部以外的部分為圓柱或角柱形狀而前端部為圓錐形、三角錐形、四角錐形、橢圓體形或半球形。The roughened particles 1 are preferably formed of copper or copper alloy. In addition, the shape of the roughened particles 1 may be a convex shape with a sharp tip, and specific examples include a cone, a triangular cone, a quadrangular cone, an ellipse, and a hemisphere. Alternatively, the following shapes may be included: the portion other than the tip is cylindrical or prismatic and the tip is cone, triangular cone, quadrangular cone, ellipse, or hemisphere.
粗糙化高度能夠以ISO25178所規定的算術平均粗糙度Sa來表示。因為本實施形態的粗糙化處理銅箔的粗糙化處理面的算術平均粗糙度Sa為0.04μm以上且0.6μm以下,所以粗糙化高度小。若使用粗糙化高度大的銅箔來製造印刷線路板,會由於表皮效果造成傳輸損耗變大,但是本實施形態的粗糙化處理銅箔在粗糙化處理面的粗糙化高度小,所以只要使用本實施形態的粗糙化處理銅箔來製造印刷線路板,即便在傳輸高頻訊號的情況下,所獲得的印刷線路板的電路中的傳輸損耗仍小。因而,本實施形態的粗糙化處理銅箔能夠適用於製造具有高頻電路之印刷線路板。The roughening height can be expressed as the arithmetic mean roughness Sa specified by ISO25178. Because the arithmetic mean roughness Sa of the roughened surface of the roughened copper foil of this embodiment is greater than 0.04 μm and less than 0.6 μm, the roughening height is small. If a copper foil with a large roughening height is used to manufacture a printed circuit board, the transmission loss will increase due to the skin effect. However, the roughening height of the roughened surface of the roughened copper foil of this embodiment is small. Therefore, as long as the roughened copper foil of this embodiment is used to manufacture a printed circuit board, even when a high-frequency signal is transmitted, the transmission loss in the circuit of the obtained printed circuit board is still small. Therefore, the roughened copper foil of this embodiment can be used to manufacture a printed circuit board with a high-frequency circuit.
為了使印刷線路板的傳輸損耗進一步減少,本實施形態的粗糙化處理銅箔的粗糙化處理面的算術平均粗糙度Sa較佳是設為0.04μm以上且0.45μm以下,更佳是設為0.04μm以上且0.35μm以下,進一步較佳是設為0.04μm以上且0.3μm以下,特佳是設為0.1μm以上且0.3μm以下。In order to further reduce the transmission loss of the printed circuit board, the arithmetic mean roughness Sa of the roughened surface of the roughened copper foil of this embodiment is preferably set to be greater than 0.04μm and less than 0.45μm, more preferably set to be greater than 0.04μm and less than 0.35μm, further preferably set to be greater than 0.04μm and less than 0.3μm, and particularly preferably set to be greater than 0.1μm and less than 0.3μm.
此外,因為粗糙化顆粒1的表面形成有凹凸,所以粗糙化處理面的表面積會變大。表面積的大小,能夠以ISO25178所規定的界面的展開面積比Sdr表示,並且界面的展開面積比Sdr能夠使用三維白光干涉型顯微鏡來測定。使用三維白光干涉型顯微鏡測定出的粗糙化處理面的界面的展開面積比Sdr必須為1000%以上且5000%以下。In addition, since the surface of the roughened particle 1 is formed with irregularities, the surface area of the roughened surface becomes larger. The size of the surface area can be expressed by the interface development area ratio Sdr specified in ISO25178, and the interface development area ratio Sdr can be measured using a three-dimensional white light interference microscope. The interface development area ratio Sdr of the roughened surface measured using a three-dimensional white light interference microscope must be 1000% or more and 5000% or less.
只要界面的展開面積比Sdr在上述範圍內,粗糙化處理面的表面積仍大,因此當將樹脂積層於本實施形態的粗糙化處理銅箔的粗糙化處理面時,即便粗糙化高度小,仍會獲得充分大的錨定效果,而粗糙化處理銅箔與樹脂的密合性優異。As long as the interface development area ratio Sdr is within the above range, the surface area of the roughened surface is still large. Therefore, when the resin is layered on the roughened surface of the roughened copper foil of this embodiment, even if the roughening height is small, a sufficiently large anchoring effect can be obtained, and the adhesion between the roughened copper foil and the resin is excellent.
此外,發明人致力於研究的結果,查明在貼合粗糙化處理銅箔與樹脂時的界面中的粗糙化處理銅箔的表面積與遷移有關,發現只要粗糙化處理面的算術平均粗糙度Sa及界面的展開面積比Sdr在上述範圍內,就不易發生遷移。亦即,若粗糙化高度小,作成印刷線路板時就會變得容易發生遷移,而容易在印刷線路板的電路中發生短路,但是只要界面的展開面積比Sdr在上述範圍內,粗糙化處理面的表面積大,因此遷移會變得不易發生,而不易在印刷線路板的電路中發生短路。In addition, the inventors have devoted themselves to the research and found that the surface area of the roughened copper foil at the interface when the roughened copper foil and the resin are bonded is related to the migration. It is found that as long as the arithmetic mean roughness Sa of the roughened surface and the open area ratio Sdr of the interface are within the above range, the migration is not easy to occur. That is, if the roughening height is small, it will become easy to migrate when the printed circuit board is made, and it is easy to cause a short circuit in the circuit of the printed circuit board. However, as long as the open area ratio Sdr of the interface is within the above range, the surface area of the roughened surface is large, so the migration will become difficult to occur, and it is not easy to cause a short circuit in the circuit of the printed circuit board.
若詳細地說明由於遷移所造成的印刷線路板的電路的短路,如同以下。 若在製造覆銅積層板時將樹脂製的基板積層在粗糙化處理銅箔的粗糙化處理面上,則粗糙化處理面的粗糙化顆粒會被埋入樹脂中,因此當利用蝕刻等去除粗糙化處理銅箔後,與經去除的粗糙化處理銅箔相對向的樹脂製的基板的表面會具有複製(replica)形狀,其轉印有粗糙化處理面的凹凸形狀。 The short circuit of the circuit of the printed circuit board caused by migration is described in detail as follows. When a resin substrate is laminated on the roughened surface of the roughened copper foil when manufacturing a copper-clad laminate, the roughened particles on the roughened surface are buried in the resin. Therefore, when the roughened copper foil is removed by etching, the surface of the resin substrate opposite to the removed roughened copper foil has a replica shape, which is a transfer of the concave-convex shape of the roughened surface.
使用上述覆銅積層板所製成印刷線路板中,遷移會沿著具有粗糙化處理面的複製形狀之樹脂與樹脂的密合界面進行,但是若粗糙化處理銅箔的粗糙化處理面的粗糙高度小,也會使得會導致短路的遷移的進行路徑變短,因此由於遷移所造成的短路會變得容易發生。In a printed circuit board made of the copper-clad laminate, migration occurs along the resin-resin bonded interface having a replica shape of the roughened surface. However, if the roughness height of the roughened surface of the roughened copper foil is small, the migration path that may cause a short circuit will be shortened, and a short circuit caused by migration will become more likely to occur.
此外,若粗糙化處理銅箔的粗糙化處理面的粗糙化高度小,錨定效果會變小,因此具有粗糙化處理面的複製形狀之樹脂與樹脂的密合性會變弱,而變得容易形成空隙。若在樹脂與樹脂之間有空隙,水分和離子會流入其中而電路線路的銅會容易變成離子溶出,從而使遷移變得容易進行。In addition, if the roughening height of the roughened surface of the roughened copper foil is small, the anchoring effect will be reduced, so the adhesion between the resins with the replica shape of the roughened surface will be weakened, and it will be easy to form gaps. If there are gaps between the resins, water and ions will flow into them and the copper of the circuit line will easily become ions and dissolve, making migration easy.
只要使用本實施形態的粗糙化處理銅箔來製造覆銅積層板和印刷線路板,會在粗糙化處理銅箔的粗糙化顆粒的表面形成有凹凸,因此具有粗糙化處理面的複製形狀之樹脂的表面形狀也會成為與粗糙化處理銅箔的粗糙化處理表面相同的形狀。因而,即便粗糙化處理銅箔的粗糙化處理面的粗糙化高度小,會導致短路的遷移的進行路徑仍會飛躍性地變長。When the roughened copper foil of this embodiment is used to manufacture copper-clad laminates and printed circuit boards, the roughened particles of the roughened copper foil have uneven surfaces, so the surface shape of the resin having a replica of the roughened surface will also become the same shape as the roughened surface of the roughened copper foil. Therefore, even if the roughening height of the roughened surface of the roughened copper foil is small, the migration path that causes the short circuit will still be drastically extended.
進一步,粗糙化處理銅箔的粗糙化顆粒的表面形成有凹凸,而粗糙化處理面的表面積大,因此具有粗糙化處理面的複製形狀之樹脂的表面形狀的表面積也大。因而,即便粗糙化處理銅箔的粗糙化處理面的粗糙化高度小,具有粗糙化處理面的複製形狀之樹脂與樹脂的密合性仍會變強,並且不易形成空隙,所以遷移會變得不易進行。Furthermore, the surface of the roughened particles of the roughened copper foil is formed with unevenness, and the surface area of the roughened surface is large, so the surface area of the surface shape of the resin having the replica shape of the roughened surface is also large. Therefore, even if the roughening height of the roughened surface of the roughened copper foil is small, the adhesion between the resin having the replica shape of the roughened surface and the resin will still be strong, and it is not easy to form gaps, so migration will become difficult to proceed.
如此,只要使用本實施形態的粗糙化處理銅箔來製造覆銅積層板和印刷線路板,會在粗糙化處理銅箔的粗糙化顆粒的表面形成有凹凸,因此即便粗糙化處理銅箔的粗糙化處理面的粗糙化高度小,會導致短路的遷移的進行路徑仍會飛躍性地變長,且具有粗糙化處理面的複製形狀之樹脂與樹脂的密合性會變強。其結果,由於遷移所造成的印刷線路板的電路的短路會變得不易發生。Thus, when the roughened copper foil of this embodiment is used to manufacture copper-clad laminates and printed circuit boards, the roughened particles of the roughened copper foil will have uneven surfaces. Therefore, even if the roughening height of the roughened surface of the roughened copper foil is small, the migration path of the short circuit will be greatly lengthened, and the adhesion between the resin and the resin having the replica shape of the roughened surface will be strengthened. As a result, the short circuit of the circuit of the printed circuit board caused by migration will become less likely to occur.
為了使粗糙化處理銅箔與樹脂的密合性更強且使由於遷移所造成的印刷線路板的電路的短路更不易發生,本實施形態的粗糙化處理銅箔的粗糙化處理面的界面的展開面積比Sdr較佳是設為2000%以上且5000%以下,更佳是設為3000%以上且5000%以下。In order to make the adhesion between the roughened copper foil and the resin stronger and to make the short circuit of the circuit of the printed circuit board caused by migration less likely to occur, the open area ratio Sdr of the interface of the roughened surface of the roughened copper foil of this embodiment is preferably set to be greater than 2000% and less than 5000%, and more preferably set to be greater than 3000% and less than 5000%.
本實施形態的粗糙化處理銅箔的粗糙化處理面的界面的展開面積比Sdr及算術平均粗糙度Sa能夠藉由下述方式求出:使用三維白光干涉型顯微鏡、掃描式電子顯微鏡、電子射線三維粗糙度解析裝置等,測定並評價粗糙化處理面的凹凸差。The interface development area ratio Sdr and arithmetic mean roughness Sa of the roughened surface of the roughened copper foil of this embodiment can be obtained by measuring and evaluating the unevenness of the roughened surface using a three-dimensional white light interference microscope, a scanning electron microscope, an electron beam three-dimensional roughness analyzer, or the like.
如同以上說明,本實施形態的粗糙化處理銅箔,其粗糙化處理面的粗糙化高度小且粗糙化處理面的表面積大,因此能夠製造同時滿足下述3種特性的印刷線路板等,其與樹脂的密合性優異、傳輸損耗小且不易發生由於遷移所造成的短路。As described above, the roughened copper foil of this embodiment has a small roughening height on the roughened surface and a large surface area, so it is possible to manufacture printed circuit boards that simultaneously meet the following three characteristics: excellent adhesion with resin, low transmission loss, and less prone to short circuits caused by migration.
再者,粗糙化處理面的十點平均粗糙度Rz較佳是設為0.6μm以上且1.4μm以下。只要粗糙化處理面的十點平均粗糙度Rz設在上述範圍內,即能夠確實地減少傳輸損耗,並且能夠確實地增加粗糙化處理銅箔與樹脂的密合性。粗糙化處理面的十點平均粗糙度Rz,能夠根據日本工業規格JIS B0601:2001所規定的方法使用接觸式表面粗糙度測定機來測定。Furthermore, the ten-point average roughness Rz of the roughened surface is preferably set to be greater than 0.6μm and less than 1.4μm. As long as the ten-point average roughness Rz of the roughened surface is set within the above range, the transmission loss can be reduced and the adhesion between the roughened copper foil and the resin can be increased. The ten-point average roughness Rz of the roughened surface can be measured using a contact surface roughness tester according to the method specified in Japanese Industrial Standard JIS B0601:2001.
此外,本實施形態的粗糙化處理銅箔中,可將防鏽處理層積層於粗糙化處理面上,並將化學密合劑層進一步積層在該防鏽處理層上。只要是這樣的構成,可藉由防鏽處理層提高粗糙化處理面的防鏽性,並且可藉由化學密合劑層進一步提高粗糙化處理面與樹脂的密合性。In addition, in the roughened copper foil of this embodiment, a rustproofing layer can be deposited on the roughened surface, and a chemical adhesive layer can be further deposited on the rustproofing layer. With such a structure, the rustproofing layer can improve the rustproofing property of the roughened surface, and the chemical adhesive layer can further improve the adhesion between the roughened surface and the resin.
繼而,說明本實施形態的粗糙化處理銅箔的製造方法的一例。 (1) 電解銅箔的製造方法 作為製造本實施形態的粗糙化處理銅箔時使用的原料銅箔,較佳是不存在粗大的凹凸而具有平滑且有光澤的表面之電解銅箔與壓延銅箔。該等銅箔之中,從生產性和成本的觀點來看更佳是電解銅箔,特佳是一般被稱為「雙面光澤箔」而雙面平滑的電解銅箔。 Next, an example of a method for producing the roughened copper foil of the present embodiment is described. (1) Method for producing electrolytic copper foil As the raw copper foil used in producing the roughened copper foil of the present embodiment, electrolytic copper foil and rolled copper foil having a smooth and glossy surface without coarse irregularities are preferred. Among these copper foils, electrolytic copper foil is more preferred from the viewpoint of productivity and cost, and electrolytic copper foil generally referred to as "double-sided glossy foil" and having smooth surfaces on both sides is particularly preferred.
本實施形態的粗糙化處理銅箔,能夠使用電解銅箔作為原料銅箔來進行製造,所以首先會一邊參照第2圖一邊說明電解銅箔的製造方法。 電解銅箔例如能夠使用如第2圖所示的電解析出裝置來製造。第2圖的電解析出裝置具備:不溶性電極12,其由包覆有鉑族元素或其氧化物之鈦所構成;及,鈦製的旋轉電極11,其與不溶性電極12相對向地設置。 The roughened copper foil of this embodiment can be manufactured using electrolytic copper foil as the raw material copper foil, so the manufacturing method of the electrolytic copper foil will be described first with reference to FIG. 2. The electrolytic copper foil can be manufactured, for example, using an electrolytic deposition device as shown in FIG. 2. The electrolytic deposition device of FIG. 2 includes: an insoluble electrode 12, which is composed of titanium coated with a platinum group element or its oxide; and a titanium rotating electrode 11, which is arranged opposite to the insoluble electrode 12.
使用電解析出裝置實行銅鍍覆,使銅於圓柱狀的旋轉電極11的表面(圓柱面)析出而形成銅箔,藉由將銅箔從旋轉電極11的表面剝離,便能夠製造電解銅箔。若詳細敘述,當實行銅鍍覆時,以旋轉電極11為陰極,並以不溶性電極12為陽極來施加電流。作為不溶性電極12,能夠使用例如DSE(Dimensionally Stable Electrode,尺寸穩定電極)電極(註冊商標)。此外,作為電解液13,例如能夠使用含有硫酸及硫酸銅之水溶液。電解液13中,可添加有機添加劑、無機添加劑等添加劑。添加劑可單獨使用1種,也可以併用2種以上。Copper plating is performed using an electrolytic deposition device to deposit copper on the surface (cylindrical surface) of a cylindrical rotating electrode 11 to form a copper foil. By peeling the copper foil from the surface of the rotating electrode 11, an electrolytic copper foil can be manufactured. To be described in detail, when copper plating is performed, a current is applied using the rotating electrode 11 as a cathode and the insoluble electrode 12 as an anode. As the insoluble electrode 12, for example, a DSE (Dimensionally Stable Electrode) electrode (registered trademark) can be used. In addition, as the electrolyte 13, for example, an aqueous solution containing sulfuric acid and copper sulfate can be used. Additives such as organic additives and inorganic additives may be added to the electrolyte 13. The additives may be used alone or in combination of two or more.
若從未圖示的電解液供給部對旋轉電極11與不溶性電極12之間供給電解液13(參照留白的箭頭),且在虛線箭頭所示的方向上使旋轉電極11以固定的速度旋轉,並且若在旋轉電極11與不溶性電極12之間施加直流電流,銅會在旋轉電極11的表面析出。只要將經析出的銅從旋轉電極11的表面剝離,並且以第2圖中由實線箭頭表示的方式撕起並連續地捲取,便可獲得電解銅箔14。When the electrolyte 13 is supplied between the rotating electrode 11 and the insoluble electrode 12 from an electrolyte supply unit (not shown) (see the blank arrow), and the rotating electrode 11 is rotated at a constant speed in the direction indicated by the dotted arrow, and a direct current is applied between the rotating electrode 11 and the insoluble electrode 12, copper is deposited on the surface of the rotating electrode 11. By peeling off the deposited copper from the surface of the rotating electrode 11 and tearing it off and continuously rolling it up in the manner indicated by the solid arrow in FIG. 2, an electrolytic copper foil 14 can be obtained.
(2)粗糙化處理 對原料銅箔的雙面中的至少其中一面施以粗糙化處理,來形成形成有複數個粗糙化顆粒之粗糙化處理面。如第3圖所示,原料銅箔的表面形成有複數個粗糙化顆粒。此時,凹凸仍未形成在粗糙化顆粒的表面,而呈現出較為平滑的表面。 (2) Roughening treatment Roughening treatment is applied to at least one of the two surfaces of the raw copper foil to form a roughened surface having a plurality of roughening particles. As shown in FIG. 3, a plurality of roughening particles are formed on the surface of the raw copper foil. At this time, the surface of the roughening particles has not yet formed irregularities, but presents a relatively smooth surface.
一般的電解銅箔的電界析出開始面(亮面)較平滑且有光澤,相反側的面即電解析出結束面(毛面)一般而言具有凹凸。此外,雙面光澤箔中,電界析出開始面、電解析出結束面皆較平滑且有光澤,但是電解析出結束面又更為平滑且有光澤。即便對電解銅箔的雙面皆實行粗糙化處理也無礙,但是即便在使用一般的電解銅箔、雙面光澤箔中的任一種電解銅箔時,較佳仍是在更平滑且具有光澤的那側的面施以粗糙化處理。 粗糙化處理,例如能夠藉由下述所示的兩階段的鍍覆處理來實行。再者,可以不實行第二階段的固定鍍覆處理。 The electrolytic copper foil of general electrolytic copper foil has a smoother and glossy surface on which electrolytic deposition starts (bright surface), and the surface on the opposite side, i.e., the electrolytic deposition end surface (rough surface), generally has unevenness. In addition, in double-sided glossy foil, both the electrolytic deposition start surface and the electrolytic deposition end surface are smoother and glossier, but the electrolytic deposition end surface is smoother and glossier. It is not a problem to perform a roughening treatment on both sides of the electrolytic copper foil, but even when using any of the electrolytic copper foils, general electrolytic copper foil and double-sided glossy foil, it is better to perform a roughening treatment on the smoother and glossier side. Roughening treatment can be performed, for example, by a two-stage coating treatment as shown below. Furthermore, the second stage fixed coating process may not be performed.
(第一階段:粗糙化鍍覆處理) 第一階段的粗糙化鍍覆處理,是將粗糙化顆粒形成於原料銅箔的至少其中一面上的處理。具體而言,是在硫酸銅浴中實行銅鍍覆處理。硫酸銅浴(粗糙化基本鍍覆浴)中,以抑制粗糙化顆粒從原料銅箔的表面脫落即「落粉」為目的,可添加鉬(Mo)、砷(As)、銻(Sb)、鉍(Bi)、硒(Se)、碲(Te)、鎢(W)等之中的至少一種作為添加劑,特佳是添加鉬。 (First stage: roughening coating treatment) The first stage of roughening coating treatment is a treatment to form roughening particles on at least one side of the raw copper foil. Specifically, the copper coating treatment is carried out in a copper sulfate bath. In the copper sulfate bath (roughening basic coating bath), in order to suppress the roughening particles from falling off from the surface of the raw copper foil, i.e. "powder falling", at least one of molybdenum (Mo), arsenic (As), antimony (Sb), bismuth (Bi), selenium (Se), tellurium (Te), tungsten (W), etc. can be added as an additive, and molybdenum is particularly preferred.
以下顯示粗糙化鍍覆處理的條件的一例。 硫酸銅浴中的硫酸銅五水合物濃度:銅以(原子)換算計為5~15g/L 硫酸銅浴中的硫酸濃度:120~250g/L 硫酸銅浴中的鉬酸銨濃度:鉬以(原子)換算計為500~1000mg/L 硫酸銅浴的溫度:15~20℃ 處理速度:80m/分鐘 電流密度:5~55A/dm 2處理時間:0.5~5.0秒 An example of the roughening coating treatment conditions is shown below. Copper sulfate pentahydrate concentration in the copper sulfate bath: 5 to 15 g/L in terms of copper (atomic) sulfuric acid concentration in the copper sulfate bath: 120 to 250 g/L Ammonium molybdate concentration in the copper sulfate bath: 500 to 1000 mg/L in terms of molybdenum (atomic) Temperature of the copper sulfate bath: 15 to 20°C Treatment speed: 80 m/min Current density: 5 to 55 A/ dm2 Treatment time: 0.5 to 5.0 seconds
(第二階段:固定鍍覆處理) 第二階段的固定鍍覆處理,是在藉由上述的粗糙化鍍覆處理所形成的粗糙化處理面施以平滑的覆蓋鍍覆的處理。具體而言,是在硫酸銅浴中實行銅鍍覆的處理。一般而言,該固定鍍覆處理是用以抑制粗糙化顆粒的脫落,即為了將粗糙化顆粒進行固定化而實行。 (Second stage: fixed coating treatment) The second stage fixed coating treatment is to apply a smooth coating to the roughened surface formed by the above-mentioned roughening coating treatment. Specifically, the copper coating treatment is carried out in a copper sulfate bath. Generally speaking, the fixed coating treatment is used to suppress the shedding of the roughened particles, that is, to fix the roughened particles.
本實施形態的粗糙化處理銅箔中,固定鍍覆處理不為必須,而能夠依據需要來實行。例如,當製造覆銅積層板,而在與使用聚醯亞胺樹脂等硬質的樹脂之可撓性樹脂製的基板進行組合時,藉由對粗糙化處理面施以固定鍍覆處理能夠抑制粗糙化顆粒的脫落,因此較佳是實行固定鍍覆處理。In the roughened copper foil of this embodiment, the fixed coating treatment is not essential, but can be performed as needed. For example, when manufacturing a copper-clad laminate and combining it with a substrate made of a flexible resin such as a hard resin such as polyimide resin, the fixed coating treatment can suppress the fall of roughened particles by performing the fixed coating treatment on the roughened surface, so it is preferable to perform the fixed coating treatment.
以下顯示固定鍍覆處理的條件的一例。 硫酸銅浴中的硫酸銅五水合物濃度:銅以(原子)換算計為50~65g/L 硫酸銅浴中的硫酸濃度:80~170g/L 處理速度:5~20m/分鐘 電流密度:1~7A/dm 2 An example of fixed plating treatment conditions is shown below. Copper sulfate pentahydrate concentration in the copper sulfate bath: 50 to 65 g/L in terms of copper (atoms) Sulfuric acid concentration in the copper sulfate bath: 80 to 170 g/L Treatment speed: 5 to 20 m/min Current density: 1 to 7 A/dm 2
(3)前處理 在進行將凹凸形成於粗糙化顆粒的表面的處理之前,可對粗糙化處理面實行用以促進該凹凸的形成的前處理。作為該前處理,可列舉例如電鍍鋅鍍覆。 (3) Pretreatment Before performing a treatment to form irregularities on the surface of the roughened particles, a pretreatment to promote the formation of the irregularities may be performed on the roughened surface. As such a pretreatment, electroplating of zinc may be cited, for example.
若對粗糙化處理面稍微地施以電鍍鋅鍍覆,會隨著粗糙化顆粒的形狀而形成不均勻的鋅鍍覆層,而不會在銅箔的表面形成均勻的鋅鍍覆層。進一步,銅與鋅容易進行合金化而成為黃銅,從而認為其合金組也會與不均勻的鋅鍍覆層同樣地呈現不均勻。亦即,若以微觀的觀點觀察銅箔的最表面,會呈現存在鋅露出之處、黃銅露出之處及組成比率不同的黃銅露出之處。該等各處藉由酸進行蝕刻的方式各自不同,因此作為結果,藉由之後的形成凹凸的處理會容易變得可有效地在粗糙化顆粒的表面形成凹凸。If the roughened surface is slightly electroplated with zinc, an uneven zinc coating will be formed depending on the shape of the roughened particles, and a uniform zinc coating will not be formed on the surface of the copper foil. Furthermore, copper and zinc are easily alloyed to form brass, so it is believed that the alloy composition will also be uneven like the uneven zinc coating. That is, if the outermost surface of the copper foil is observed from a microscopic point of view, there will be places where zinc is exposed, places where brass is exposed, and places where brass with different composition ratios is exposed. The way these places are etched by acid is different, so as a result, it will be easy to effectively form unevenness on the surface of the roughened particles by the subsequent unevenness forming process.
電鍍鋅鍍覆例如能夠使用鹼性鋅鍍覆液來實行。鹼性鋅鍍覆液中的鋅濃度較佳是2~8g/L。只要鹼性鋅鍍覆液的鋅濃度在上述範圍內,鋅的電流效率就會適當,因此可容易地獲得有效的鋅鍍覆,並且在鹼性鋅鍍覆液中不易產生沉澱,而鹼性鋅鍍覆液的穩定性優異。Electroplating zinc coating can be performed, for example, using an alkaline zinc coating solution. The zinc concentration in the alkaline zinc coating solution is preferably 2 to 8 g/L. As long as the zinc concentration in the alkaline zinc coating solution is within the above range, the current efficiency of zinc will be appropriate, so effective zinc coating can be easily obtained, and precipitation is not easily generated in the alkaline zinc coating solution, and the stability of the alkaline zinc coating solution is excellent.
鹼性鋅鍍覆液較佳是含有氫氧化鈉(NaOH),其濃度較佳是20~45g/L。只要鹼性鋅鍍覆液中的氫氧化鈉濃度在上述範圍內,鹼性鋅鍍覆液的導電率就會適當,因此會變得可容易地獲得有效的鋅鍍覆量,並且經鍍覆的鋅不易再次溶解於鹼性鋅鍍覆液。若經鍍覆的鋅再次溶解於鹼性鋅鍍覆液,在之後進行的形成凹凸的處理中,會有粗糙化顆粒的表面產生凹凸的形成不充分之處的疑慮。 進行電鍍鋅鍍覆時的電流密度較佳是0.1~1 A/dm 2,處理時間較佳是1~5秒。 The alkaline zinc coating solution preferably contains sodium hydroxide (NaOH), and the concentration thereof is preferably 20 to 45 g/L. As long as the sodium hydroxide concentration in the alkaline zinc coating solution is within the above range, the conductivity of the alkaline zinc coating solution will be appropriate, so that an effective zinc coating amount can be easily obtained, and the coated zinc is not easily dissolved in the alkaline zinc coating solution again. If the coated zinc is dissolved in the alkaline zinc coating solution again, there is a concern that the surface of the roughened particles will not be sufficiently roughened in the subsequent roughening process. The current density during electrogalvanizing is preferably 0.1 to 1 A/dm 2 , and the treatment time is preferably 1 to 5 seconds.
作為其他的前處理,可列舉例如自然氧化等氧化處理。藉由使粗糙化處理面的粗糙化顆粒的表面稍微地氧化,藉由之後的形成凹凸的處理會容易變得可有效地在粗糙化顆粒的表面形成凹凸。As other pre-treatment, there can be mentioned oxidation treatment such as natural oxidation. By slightly oxidizing the surface of the roughening particles of the roughening treatment surface, it becomes easy to effectively form the roughness on the surface of the roughening particles by the subsequent roughening treatment.
以下例示自然氧化的方法的一例。使銅箔乾燥後,在大氣下放置12~48小時,藉此能夠使銅箔的表面稍微地氧化。該方法中,容易被自然氧化之處在銅箔的粗糙化顆粒的表面也有差異,所以以微觀的觀點來看會形成氧化膜的厚度不同之處。該等各處藉由酸進行蝕刻的方法各自不同,因此認為,作為結果,藉由之後的形成凹凸的處理會容易變得可有效地在粗糙化顆粒的表面形成凹凸。The following is an example of a natural oxidation method. After drying the copper foil, place it in the atmosphere for 12 to 48 hours to slightly oxidize the surface of the copper foil. In this method, the areas that are easily oxidized naturally also differ on the surface of the roughened particles of the copper foil, so from a microscopic point of view, different thicknesses of the oxide film will be formed. The method of etching with acid in each of these areas is different, so it is believed that as a result, it will be easy to effectively form unevenness on the surface of the roughened particles by the subsequent unevenness forming process.
只要自然氧化的處理時間在上述範圍內,即可獲得平均厚度適當的氧化膜,因此,在後續的處理中不易發生不良。例如,若進行超過48小時的氧化,氧化會過度進行,因此在對粗糙化處理銅箔實行施以電解鍍覆的防鏽處理時,會有無法獲得充分的附著量的防鏽處理層的疑慮。As long as the natural oxidation treatment time is within the above range, an oxide film with an appropriate average thickness can be obtained, so it is less likely to cause problems in subsequent treatments. For example, if the oxidation time exceeds 48 hours, the oxidation will proceed excessively, so when the roughened copper foil is subjected to electrolytic plating for rust prevention, there is a concern that a sufficient amount of rust prevention treatment layer may not be obtained.
(4)將凹凸形成於粗糙化顆粒的表面的處理 作為將凹凸形成於粗糙化顆粒的表面的處理,可列舉藉由無機酸、有機酸等化學藥劑進行的蝕刻和藉由陽極氧化進行的蝕刻等。利用蝕刻來去除粗糙化顆粒的部分的表面,藉此可形成凹部,並且去除量較少的部分會成為凸部(第1圖中的粗糙化顆粒1的凸部1a),因此會在粗糙化顆粒的表面形成凹凸。 (4) Treatment for forming unevenness on the surface of roughened particles As treatment for forming unevenness on the surface of roughened particles, etching by chemical agents such as inorganic acids and organic acids and etching by anodic oxidation can be listed. By using etching to remove part of the surface of the roughened particles, a concave portion can be formed, and a portion with a smaller amount of removal becomes a convex portion (convex portion 1a of roughened particle 1 in Figure 1), so unevenness is formed on the surface of the roughened particles.
作為藉由化學藥劑進行的蝕刻,可列舉例如浸漬於鹽酸、硫酸、磷酸等無機酸的銅箔的處理。藉由使銅箔浸漬在特定濃度的無機酸水溶液中數秒~數十秒左右,可在粗糙化顆粒的表面形成複數個微細的凹凸。 例如,當在使用鹽酸作為無機酸時,藉由使銅箔浸漬於濃度5~20體積%的鹽酸中2秒以上,能夠在粗糙化顆粒的表面形成微細的凹凸,而能夠使粗糙化處理面的表面積充分地增加。 As an example of etching by chemical agents, for example, treatment of copper foil immersed in inorganic acids such as hydrochloric acid, sulfuric acid, and phosphoric acid can be cited. By immersing the copper foil in an aqueous solution of an inorganic acid of a specific concentration for several seconds to several tens of seconds, a plurality of fine asperities can be formed on the surface of the roughened particles. For example, when hydrochloric acid is used as the inorganic acid, by immersing the copper foil in hydrochloric acid at a concentration of 5 to 20 volume % for more than 2 seconds, fine asperities can be formed on the surface of the roughened particles, and the surface area of the roughened surface can be sufficiently increased.
作為浸漬於無機酸的處理以外的蝕刻,可列舉例如:浸漬於乙酸、甲酸等有機酸的處理、浸漬於含有氯化鐵和氯化銅之溶液中的處理、浸漬於市售的微蝕刻劑的處理、藉由陽極氧化進行的電解蝕刻處理。該等蝕刻可單獨實行1種,也可以組合複數種來實行。Examples of etching other than immersion in inorganic acid include immersion in organic acid such as acetic acid and formic acid, immersion in a solution containing ferric chloride and cupric chloride, immersion in a commercially available microetchant, and electrolytic etching by anodic oxidation. These etchings may be performed alone or in combination.
第4圖表示藉由這樣的蝕刻在粗糙化顆粒的表面形成凹凸而成的粗糙化處理銅箔的粗糙化處理面之例。可知比起第3圖所示的粗糙化顆粒,第4圖所示的粗糙化顆粒的表面形成有多數的凹凸。並且可知,藉由該等凹凸,粗糙化顆粒的表面積變得較大。FIG. 4 shows an example of a roughened surface of a roughened copper foil formed by etching to form irregularities on the surface of the roughened particles. It can be seen that the surface of the roughened particles shown in FIG. 4 has a greater number of irregularities than the surface of the roughened particles shown in FIG. 3. It can also be seen that the surface area of the roughened particles becomes larger due to the irregularities.
(5)表面處理 對於藉由上述方式所製成的粗糙化處理銅箔的粗糙化處理面,可依據需要施以表面處理。作為表面處理,可列舉在粗糙化處理面上形成下述的表面處理層的處理。亦即,可列舉形成下述表面處理層的處理:基底層,其用以抑制粗糙化處理銅箔與樹脂製的基板的密合性降低的情況,該密合性的降低是在製造覆銅積層板時,粗糙化處理銅箔中的銅會擴散於被積層在粗糙化處理銅箔的粗糙化處理面上的樹脂製的基板而發生銅害所造成;使粗糙化處理銅箔的耐熱性提升的耐熱處理層;使粗糙化處理銅箔的防鏽性提升的防鏽處理層;使粗糙化處理銅箔與樹脂製的基板的密合性提升的化學密合劑層等。該等表面處理層,可以在粗糙化處理銅箔的粗糙化處理面上單獨積層1種,也可以組合2種以上來積層。 (5) Surface treatment The roughened surface of the roughened copper foil produced by the above method may be subjected to surface treatment as required. As the surface treatment, the following surface treatment layer may be formed on the roughened surface. That is, the following surface treatment layers can be enumerated: a base layer for suppressing the reduction in adhesion between the roughened copper foil and the resin substrate, which is caused by copper damage caused by the diffusion of copper in the roughened copper foil into the resin substrate laminated on the roughened surface of the roughened copper foil during the manufacture of the copper-clad laminate; a heat-resistant treatment layer for improving the heat resistance of the roughened copper foil; a rust-proof treatment layer for improving the rust resistance of the roughened copper foil; a chemical adhesive layer for improving the adhesion between the roughened copper foil and the resin substrate, etc. Such surface treatment layers may be deposited on the roughened surface of the roughened copper foil by depositing one type alone or by combining two or more types.
再者,包含耐熱處理層及防鏽處理層之中間層與化學密合劑層的厚度非常小,因此不會對形成在粗糙化處理銅箔的粗糙化處理面的粗糙化顆粒的顆粒形狀造成影響。粗糙化顆粒的顆粒形狀,實質上是由在藉由粗糙化處理形成的階段中的粗糙化顆粒的顆粒形狀所決定。Furthermore, the thickness of the intermediate layer and the chemical adhesive layer including the heat-resistant treatment layer and the rust-proof treatment layer is very small, so it does not affect the particle shape of the roughened particles formed on the roughened surface of the roughened copper foil. The particle shape of the roughened particles is substantially determined by the particle shape of the roughened particles in the stage of formation by the roughening treatment.
此外,可以將基底層、耐熱處理層及防鏽處理層這三層全部形成在粗糙化處理銅箔的粗糙化處理面上,也可以依據需要僅形成該三層中的任一層或兩層,但是當形成該三層全部時,較佳是從粗糙化處理面側起依序積層基底層、耐熱處理層及防鏽處理層。In addition, the base layer, the heat-resistant treatment layer and the rust-proof treatment layer can all be formed on the roughened surface of the roughened copper foil, or only any one or two of the three layers can be formed as needed. However, when all three layers are formed, it is better to stack the base layer, the heat-resistant treatment layer and the rust-proof treatment layer in sequence from the roughened surface side.
進一步,當將化學密合劑層積層於粗糙化處理銅箔時,在粗糙化處理銅箔與化學密合劑層之間,可插入基底層、耐熱處理層及防鏽處理層中的至少一層,也可以不插入(亦即,將化學密合劑層直接形成在粗糙化處理銅箔的粗糙化處理面上)。Furthermore, when the chemical adhesive layer is laminated on the roughened copper foil, at least one of the base layer, the heat-resistant treatment layer and the rust-proof treatment layer may be inserted between the roughened copper foil and the chemical adhesive layer, or may not be inserted (that is, the chemical adhesive layer is directly formed on the roughened surface of the roughened copper foil).
當在製造覆銅積層板時,粗糙化處理銅箔中的銅會擴散於被積層在粗糙化處理銅箔的粗糙化處理面上的樹脂製的基板而發生銅害,而有粗糙化處理銅箔與樹脂製的基板的密合性降低的疑慮時,較佳是在粗糙化處理銅箔與化學密合劑層之間形成基底層。基底層較佳是含有鎳(Ni),並且較佳是藉由鍍覆形成例如選自鎳、鎳-磷(P)、鎳-鋅(Zn)中的至少1種。When manufacturing a copper-clad laminate, copper in the roughened copper foil diffuses into a resin substrate laminated on the roughened surface of the roughened copper foil to cause copper damage, and there is a concern that the adhesion between the roughened copper foil and the resin substrate is reduced. It is preferred to form a base layer between the roughened copper foil and the chemical adhesive layer. The base layer preferably contains nickel (Ni), and is preferably formed by plating, for example, at least one selected from nickel, nickel-phosphorus (P), and nickel-zinc (Zn).
當需要使粗糙化處理銅箔的耐熱性提升時,較佳是形成耐熱處理層。耐熱處理層較佳是含有鋅,並且較佳是藉由鍍覆形成例如選自鋅、含鋅之合金中的至少1種。作為含有鋅之合金之例,可列舉:鋅-錫(Sn)合金、鋅-鎳合金、鋅-鈷(Co)合金、鋅-銅(Cu)合金、鋅-鉻(Cr)合金、鋅-釩(V)合金。When it is necessary to improve the heat resistance of the roughened copper foil, it is preferred to form a heat-resistant treatment layer. The heat-resistant treatment layer preferably contains zinc, and is preferably formed by plating, for example, at least one selected from zinc and an alloy containing zinc. Examples of alloys containing zinc include zinc-tin (Sn) alloys, zinc-nickel alloys, zinc-cobalt (Co) alloys, zinc-copper (Cu) alloys, zinc-chromium (Cr) alloys, and zinc-vanadium (V) alloys.
當需要使粗糙化處理銅箔的防鏽性提升時,較佳是形成防鏽處理層。防鏽處理層較佳是含有鉻,可列舉例如藉由鉻鍍覆形成鉻層、藉由鉻酸鹽處理形成鉻酸鹽層。When the rust resistance of the roughened copper foil needs to be improved, it is preferred to form a rust-proof treatment layer. The rust-proof treatment layer preferably contains chromium, and can be formed by, for example, chromium plating or chromate treatment.
當需要使粗糙化處理銅箔與樹脂製的基板的密合性提升時,較佳是形成化學密合劑層。化學密合劑層能夠藉由使用矽烷耦合劑等化學密合劑的化學密合劑處理來形成。例如能夠藉由下述方式來形成:將化學密合劑溶液直接或隔著中間層地塗佈在粗糙化處理銅箔的粗糙化處理面上後,進行風乾(自然乾燥)或加熱乾燥。When it is necessary to improve the adhesion between the roughened copper foil and the resin substrate, it is preferable to form a chemical adhesive layer. The chemical adhesive layer can be formed by chemical adhesive treatment using a chemical adhesive such as a silane coupling agent. For example, it can be formed by applying a chemical adhesive solution directly or through an intermediate layer on the roughened surface of the roughened copper foil, and then air drying (natural drying) or heat drying.
只要經塗佈的化學密合劑溶液中的水等溶劑蒸發,即可形成化學密合劑層,而發揮使粗糙化處理銅箔與樹脂製的基板的密合性提升這樣的效果。若以50~180℃的溫度進行加熱乾燥,可促進化學密合劑與粗糙化處理銅箔的反應,因而適當。As long as the solvent such as water in the applied chemical adhesive solution evaporates, a chemical adhesive layer can be formed, which can improve the adhesion between the roughened copper foil and the resin substrate. If the temperature is heated and dried at 50 to 180°C, the reaction between the chemical adhesive and the roughened copper foil can be promoted, so it is appropriate.
作為矽烷耦合劑,較佳是使用環氧系矽烷耦合劑、胺基系矽烷耦合劑、乙烯基系矽烷耦合劑、甲基丙烯酸系矽烷耦合劑、丙烯酸系矽烷耦合劑、唑系矽烷耦合劑、苯乙烯系矽烷耦合劑、尿素系矽烷耦合劑、巰基系矽烷耦合劑、硫化物系矽烷耦合劑、異氰酸酯系矽烷耦合劑之中的至少1種。As the silane coupling agent, it is preferred to use at least one of epoxy silane coupling agents, amino silane coupling agents, vinyl silane coupling agents, methacrylate silane coupling agents, acrylic silane coupling agents, azole silane coupling agents, styrene silane coupling agents, urea silane coupling agents, butyl silane coupling agents, sulfide silane coupling agents, and isocyanate silane coupling agents.
[實施例] 以下顯示實施例及比較例,並進一步具體地說明本發明。 (A-1)電解銅箔 製造電解銅箔來作為用以製造實施例1~17及比較例1~10的粗糙化處理銅箔的原料銅箔。使用與第2圖相同的裝置,利用與前述同樣的操作來實行銅鍍覆,使銅在旋轉電極的表面析出。並且,將經析出的銅從旋轉電極的表面撕起,並連續性地捲取而製成厚度18μm的電解銅箔(雙面光澤箔)。 [Examples] The following shows examples and comparative examples, and further specifically describes the present invention. (A-1) Electrolytic copper foil Electrolytic copper foil is manufactured as raw copper foil for manufacturing roughened copper foil of Examples 1 to 17 and Comparative Examples 1 to 10. Copper plating is performed using the same apparatus as in FIG. 2 and the same operation as described above, so that copper is deposited on the surface of a rotating electrode. Furthermore, the deposited copper is torn off from the surface of the rotating electrode and continuously rolled up to produce an electrolytic copper foil (double-sided glossy foil) with a thickness of 18 μm.
作為陰極的旋轉電極,使用鈦製的旋轉筒,其已藉由#1000~#2000的拋光研磨調整表面(圓柱面)的粗糙度而成。作為陽極的不溶性電極,使用尺寸穩定性陽極DSA(註冊商標)。 作為電解液,使用硫酸銅水溶液,其含有濃度75g/L的銅、濃度65g/L的硫酸、濃度20mg/L的氯、濃度2mg/L的3-巰基-1-丙磺酸鈉、濃度10mg/L的羥乙基纖維素及濃度50mg/L的低分子量膠(分子量3000)。銅鍍覆時的電解液的溫度為50℃,電流密度為45A/dm 2。 As the cathode, a rotating electrode was used, which was a titanium rotating drum whose surface (cylindrical surface) roughness was adjusted by polishing with a polishing of #1000 to #2000. As the anode, an insoluble electrode was used, which was a dimensionally stable anode DSA (registered trademark). As the electrolyte, a copper sulfate aqueous solution was used, which contained 75 g/L copper, 65 g/L sulfuric acid, 20 mg/L chlorine, 2 mg/L sodium 3-hydroxy-1-propanesulfonate, 10 mg/L hydroxyethyl cellulose, and 50 mg/L low molecular weight gel (molecular weight 3000). The temperature of the electrolyte during copper plating was 50°C and the current density was 45 A/dm 2 .
(A-2)壓延銅箔 作為用以製造實施例18及比較例11的粗糙化處理銅箔的原料銅箔,使用竹內金屬箔粉工業股份有限公司製造的壓延銅箔C1020R-H。該壓延銅箔的厚度為20μm。 (A-2) Rolled copper foil As the raw copper foil for producing the roughened copper foil of Example 18 and Comparative Example 11, rolled copper foil C1020R-H manufactured by Takeuchi Metal Foil Powder Industry Co., Ltd. was used. The thickness of the rolled copper foil was 20 μm.
(B)粗糙化處理 繼而,對由上述方式所製成的電解銅箔的電解析出結束面(毛面)及壓延銅箔的其中一面施以粗糙化處理,而作成粗糙化處理面。該粗糙化處理是藉由以卷對卷製程實行兩階段的電鍍鍍覆處理來實施。 (B) Roughening treatment Then, the electrolytic copper foil produced by the above method is subjected to a roughening treatment on the electrolytic deposition end surface (rough surface) and one side of the rolled copper foil to form a roughened surface. The roughening treatment is carried out by performing a two-stage electroplating treatment in a roll-to-roll process.
第一階段的電鍍鍍覆處理即粗糙化鍍覆處理,是使用具有下述組成且15℃的粗糙化基本鍍覆浴的電鍍鍍覆處理,以表1所示的電流密度及處理時間且利用15m/分鐘的處理速度實行電鍍鍍覆處理,藉此在電解銅箔的電解析出結束面形成粗糙化高度及形狀不同的粗糙化顆粒。 粗糙化基本鍍覆浴中的硫酸銅五水合物濃度:銅以(原子)換算計為10g/L 粗糙化基本鍍覆浴中的硫酸濃度:150g/L 粗糙化基本鍍覆浴中的鉬酸銨濃度:鉬以(原子)換算計為600mg/L The first stage of electroplating treatment, i.e., roughening treatment, is an electroplating treatment using a roughening basic coating bath having the following composition and at 15°C, with the current density and treatment time shown in Table 1 and a treatment speed of 15 m/min, thereby forming roughening particles of different roughening heights and shapes on the electrolytic deposition end surface of the electrolytic copper foil. Copper sulfate pentahydrate concentration in the roughening basic coating bath: 10 g/L in terms of copper (atoms) Sulfuric acid concentration in the roughening basic coating bath: 150 g/L Ammonium molybdate concentration in the roughening basic coating bath: 600 mg/L in terms of molybdenum (atoms)
[表1]
第二階段的電鍍鍍覆處理即固定鍍覆處理,是使用具有下述組成的固定基本鍍覆浴的電鍍鍍覆處理,以表1所示的電流密度及處理時間且利用15m/分鐘的處理速度實行電鍍鍍覆處理,藉此在經施加粗糙化鍍覆處理的電解析出結束面施以平滑的覆蓋鍍覆,將粗糙化顆粒固定化。 固定基本鍍覆浴中的硫酸銅五水合物濃度:銅以(原子)換算計為55g/L 固定基本鍍覆浴中的硫酸濃度:120g/L 再者,比較例9並未施加粗糙化處理。 The second stage of electroplating treatment, i.e., fixed coating treatment, is an electroplating treatment using a fixed basic coating bath having the following composition, and the electroplating treatment is performed at a current density and treatment time shown in Table 1 and a treatment speed of 15 m/min, thereby applying a smooth coating to the electrolytic deposition end surface subjected to the roughening coating treatment to fix the roughened particles. Concentration of copper sulfate pentahydrate in the fixed basic coating bath: 55 g/L in terms of copper (atoms) Concentration of sulfuric acid in the fixed basic coating bath: 120 g/L In addition, no roughening treatment was applied to Comparative Example 9.
(C)前處理 在對經施以粗糙化處理的電解銅箔的電解析出結束面施以將凹凸形成於粗糙化顆粒的表面的處理之前,實行用以促進形成凹凸的前處理。針對實施例1~14、18及比較例7~10,實行下述電鍍鋅鍍覆作為前處理。 鍍覆浴中的鋅濃度:2.5g/L 鍍覆浴中的氫氧化鈉濃度35g/L 鍍覆浴的溫度:20℃ 電流密度:0.5A/dm 2處理時間:1秒 (C) Pretreatment Before the roughened surface of the electrolytic copper foil is subjected to a treatment for forming unevenness on the surface of the roughened particles, a pretreatment for promoting the formation of unevenness is performed. For Examples 1 to 14, 18 and Comparative Examples 7 to 10, the following electrolytic zinc plating is performed as a pretreatment. Zinc concentration in the plating bath: 2.5 g/L Sodium hydroxide concentration in the plating bath: 35 g/L Temperature of the plating bath: 20°C Current density: 0.5 A/ dm2 Treatment time: 1 second
此外,針對實施例15~17,實行下述條件的自然氧化作為前處理。 溫度:23℃ 濕度:50%RH 處理時間:12小時 再者,比較例1~7、11並未施以前處理。 In addition, for Examples 15 to 17, natural oxidation under the following conditions was performed as a pretreatment. Temperature: 23°C Humidity: 50% RH Treatment time: 12 hours Furthermore, Comparative Examples 1 to 7 and 11 were not subjected to pretreatment.
(D)將凹凸形成於粗糙化顆粒的表面的處理 針對已實行前處理的實施例1~18及比較例8~10,藉由浸漬於濃度10體積%(僅實施例3為11體積%)且溫度30℃的鹽酸中,來實行將凹凸形成於粗糙化顆粒的表面的處理。浸漬的處理時間如同表1所示。藉由這樣的處理,來製造粗糙化處理面的表面積不同的粗糙化處理銅箔。 (D) Treatment of forming irregularities on the surface of roughened particles For Examples 1 to 18 and Comparative Examples 8 to 10 that had been pre-treated, treatment of forming irregularities on the surface of roughened particles was performed by immersing them in hydrochloric acid at a concentration of 10 volume % (11 volume % only for Example 3) and a temperature of 30°C. The immersion treatment time is shown in Table 1. By such treatment, roughened copper foils with different surface areas of the roughened surface were manufactured.
再者,詳情會進行後述,但是針對比較例1~6、11並未施以將凹凸形成於粗糙化顆粒的表面的處理。此外,針對比較例7,在含有9-苯基吖啶(C 19H 13N)之硫酸銅鍍覆浴中實行電解鍍覆,將突起物形成於粗糙化顆粒的表面,藉此將凹凸形成於粗糙化顆粒的表面。 Although the details will be described later, no treatment for forming irregularities on the surface of the roughened particles was performed for Comparative Examples 1 to 6 and 11. Moreover, for Comparative Example 7, protrusions were formed on the surface of the roughened particles by electrolytic plating in a copper sulfate plating bath containing 9-phenylacridine (C 19 H 13 N), thereby forming irregularities on the surface of the roughened particles.
(E)基底層及中間層的形成 繼而,在經形成凹凸於粗糙化顆粒的表面之粗糙化處理面上,依序積層基底層、耐熱處理層及防鏽處理層。基底層藉由利用下述條件實行鎳鍍覆來形成,耐熱處理層藉由利用下述條件實行鋅鍍覆來形成,防鏽處理層藉由利用下述條件實行鉻鍍覆來形成。 (E) Formation of base layer and intermediate layer Then, on the roughened surface with unevenness formed on the surface of the roughened particles, a base layer, a heat-resistant treatment layer, and a rust-proof treatment layer are sequentially deposited. The base layer is formed by nickel plating under the following conditions, the heat-resistant treatment layer is formed by zinc plating under the following conditions, and the rust-proof treatment layer is formed by chromium plating under the following conditions.
〈鎳鍍覆的條件〉 鍍覆浴中的鎳濃度:45g/L 鍍覆浴中的硼酸(H 3BO 3)濃度:4g/L 鍍覆浴的溫度:20℃ 鍍覆浴的pH值:3.5 電流密度:0.2A/dm 2處理時間:8秒 <Conditions for nickel plating> Nickel concentration in plating bath: 45 g/L Boric acid (H 3 BO 3 ) concentration in plating bath: 4 g/L Plating bath temperature: 20°C Plating bath pH: 3.5 Current density: 0.2 A/dm 2 Treatment time: 8 seconds
〈鋅鍍覆的條件〉 鍍覆浴中的鋅濃度:2.5g/L 鍍覆浴中的氫氧化鈉濃度:35g/L 鍍覆浴的溫度:20℃ 電流密度:0.5A/dm 2處理時間:4秒 <Conditions for zinc plating> Zinc concentration in plating bath: 2.5 g/L Sodium hydroxide concentration in plating bath: 35 g/L Plating bath temperature: 20°C Current density: 0.5 A/ dm2 Treatment time: 4 seconds
〈鉻鍍覆的條件〉 鍍覆浴中的鉻濃度:6g/L 鍍覆浴的溫度:30℃ 鍍覆浴的pH值:2.3 電流密度:5A/dm 2處理時間:3秒 <Conditions for chromium plating> Chromium concentration in plating bath: 6 g/L Plating bath temperature: 30°C Plating bath pH: 2.3 Current density: 5 A/ dm2 Treatment time: 3 seconds
(F)化學密合劑層的形成 最後將化學密合劑層積層在防鏽處理層上。若進行詳細敘述,是將濃度0.2質量%的3-胺丙基三甲氧基矽烷(C 6H 17NO 3Si)水溶液塗佈於防鏽處理層,並使其在100℃中乾燥來形成矽烷耦合劑層。 (F) Formation of chemical bonding agent layer Finally, a chemical bonding agent layer is deposited on the anti-rust treatment layer. In detail, a 0.2 mass % aqueous solution of 3-aminopropyltrimethoxysilane (C 6 H 17 NO 3 Si) is applied to the anti-rust treatment layer and dried at 100°C to form a silane coupling agent layer.
(G)比較例的說明 在此處,總括性地說明比較例1~11。 比較例1~3是在粗糙化顆粒的表面未形成有凹凸之例,其並未實行將凹凸形成於粗糙化顆粒的表面的處理。比較例4~6各自是在粗糙化顆粒的表面未形成有凹凸之例,其在依據日本專利公報第6632739號、日本專利公報第6462961號或國際公開第2020/031721號實施例所揭示的方法形成粗糙化顆粒後,並未實行將凹凸形成於粗糙化顆粒的表面的處理。 (G) Description of Comparative Examples Here, Comparative Examples 1 to 11 are generally described. Comparative Examples 1 to 3 are examples in which no unevenness is formed on the surface of the roughened particles, and the treatment of forming unevenness on the surface of the roughened particles is not implemented. Comparative Examples 4 to 6 are each examples in which no unevenness is formed on the surface of the roughened particles, and the treatment of forming unevenness on the surface of the roughened particles is not implemented after the roughened particles are formed according to the method disclosed in Japanese Patent Gazette No. 6632739, Japanese Patent Gazette No. 6462961 or International Publication No. 2020/031721.
比較例7是將凹凸形成於粗糙化顆粒的表面的之例,其藉由實行電解鍍覆並將突起物形成於粗糙化顆粒的表面。比較例8是粗糙化處理面的粗糙化高度過大之例。比較例9是在銅箔的電解析出結束面未形成粗糙化顆粒之例,其並未實行粗糙化處理。比較例10是粗糙化處理面的表面積過大之例。比較例11是在粗糙化顆粒的表面未形成有凹凸之例,其在對壓延銅箔實行粗糙化處理後並未實行將凹凸形成於粗糙化顆粒的表面的處理。Comparative Example 7 is an example in which unevenness is formed on the surface of the roughened particles, and protrusions are formed on the surface of the roughened particles by performing electrolytic plating. Comparative Example 8 is an example in which the roughening height of the roughened surface is too large. Comparative Example 9 is an example in which roughened particles are not formed on the electrolytic deposition end surface of the copper foil, and the roughening treatment is not performed. Comparative Example 10 is an example in which the surface area of the roughened surface is too large. Comparative Example 11 is an example in which unevenness is not formed on the surface of the roughened particles, and the roughening treatment is performed on the rolled copper foil without performing the treatment to form unevenness on the surface of the roughened particles.
在此處,詳細地說明比較例7的粗糙化處理銅箔的製造方法。比較例7中,藉由兩階段的電解鍍覆在電解銅箔的電解析出結束面形成粗糙化顆粒。然後,進一步實行第三階段的電解鍍覆,將凹凸形成於粗糙化顆粒的表面。繼而,與實施例同樣地操作,將基底層、耐熱處理層、防鏽處理層及化學密合劑層進行積層,來獲得粗糙化處理銅箔。Here, the manufacturing method of the roughened copper foil of Comparative Example 7 is described in detail. In Comparative Example 7, roughened particles are formed on the electrolytic deposition end surface of the electrolytic copper foil by two-stage electrolytic plating. Then, the third stage of electrolytic plating is further performed to form concavities and convexities on the surface of the roughened particles. Then, the base layer, the heat-resistant treatment layer, the rust-proof treatment layer and the chemical bonding agent layer are laminated in the same manner as in the embodiment to obtain the roughened copper foil.
比較例7的粗糙化處理銅箔的製造方法,是依據國際公開第2019/188712號的實施例所揭示的方法,在第三階段的電解鍍覆中將大致球狀的突起物形成於粗糙化顆粒的表面,藉此將凹凸形成在粗糙化顆粒的表面。 三階段的電解鍍覆中,各自使用銅濃度、硫酸濃度、氯濃度、9-苯基吖啶(9PA)濃度如同下述的硫酸銅溶液作為鍍覆浴。三階段的電解鍍覆的條件各自如同下述。 The manufacturing method of the roughened copper foil of Comparative Example 7 is based on the method disclosed in the embodiment of International Publication No. 2019/188712, and in the third stage of electrolytic plating, roughly spherical protrusions are formed on the surface of the roughened particles, thereby forming unevenness on the surface of the roughened particles. In the three-stage electrolytic plating, a copper sulfate solution with a copper concentration, sulfuric acid concentration, chlorine concentration, and 9-phenylacridine (9PA) concentration as described below is used as a plating bath. The conditions of the three-stage electrolytic plating are each as described below.
〈第一階段的電解鍍覆的條件〉 鍍覆浴中的硫酸銅五水合物濃度:銅以(原子)換算計為8g/L 鍍覆浴中的硫酸濃度:100g/L 鍍覆浴中的氯濃度:50ppm 鍍覆浴中的9PA濃度:60ppm 鍍覆浴中的溫度:30℃ 處理速度:15m/分鐘 處理方向極間流速:15m/分鐘 電流密度:9.2A/dm 2處理時間:4.4秒 <Conditions for electrolytic plating in the first stage> Copper sulfate pentahydrate concentration in the plating bath: 8 g/L in terms of copper (atoms) Sulfuric acid concentration in the plating bath: 100 g/L Chlorine concentration in the plating bath: 50 ppm 9PA concentration in the plating bath: 60 ppm Temperature in the plating bath: 30°C Processing speed: 15 m/min Flow rate between electrodes in the processing direction: 15 m/min Current density: 9.2 A/ dm2 Processing time: 4.4 seconds
〈第二階段的電解鍍覆的條件〉 鍍覆浴中的硫酸銅五水合物濃度:銅以(原子)換算計為69g/L 鍍覆浴中的硫酸濃度:240g/L 鍍覆浴中的氯濃度:0ppm 鍍覆浴中的9PA濃度:0ppm 鍍覆浴中的溫度:52℃ 處理速度:15m/分鐘 處理方向極間流速:15m/分鐘 電流密度:2.1A/dm 2處理時間:4.4秒 <Conditions for electrolytic plating in the second stage> Copper sulfate pentahydrate concentration in the plating bath: 69 g/L in terms of copper (atoms) Sulfuric acid concentration in the plating bath: 240 g/L Chlorine concentration in the plating bath: 0 ppm 9PA concentration in the plating bath: 0 ppm Temperature in the plating bath: 52°C Processing speed: 15 m/min Electrode flow rate in the processing direction: 15 m/min Current density: 2.1 A/ dm2 Processing time: 4.4 seconds
〈第三階段的電解鍍覆的條件〉 鍍覆浴中的硫酸銅五水合物濃度:銅以(原子)換算計為13g/L 鍍覆浴中的硫酸濃度:75g/L 鍍覆浴中的氯濃度:35ppm 鍍覆浴中的9PA濃度:139ppm 鍍覆浴中的溫度:28℃ 處理速度:15m/分鐘 處理方向極間流速:15m/分鐘 電流密度:33.6A/dm 2處理時間:0.6秒 <Conditions for electrolytic plating in the third stage> Copper sulfate pentahydrate concentration in the plating bath: 13 g/L in terms of copper (atoms) Sulfuric acid concentration in the plating bath: 75 g/L Chlorine concentration in the plating bath: 35 ppm 9PA concentration in the plating bath: 139 ppm Temperature in the plating bath: 28°C Processing speed: 15 m/min Electrode flow rate in the processing direction: 15 m/min Current density: 33.6 A/ dm2 Processing time: 0.6 seconds
(H)評價 針對由上述方式製成的實施例1~18及比較例1~11的銅箔實行各種評價 [粗糙化處理面的界面的展開面積比Sdr及算術平均粗糙度Sa] 粗糙化處理面的界面的展開面積比Sdr及算術平均粗糙度Sa,能夠藉由依據ISO 25178所規定的方法,使用三維白光干涉型顯微鏡、掃描式電子顯微鏡、電子射線三維粗糙度解析裝置等來測定。針對實施例1~18及比較例1~11的銅箔,使用BRUKER公司製造的三維白光干涉型顯微鏡Wyko ContourGT-K,測定粗糙化處理面的表面形狀,並實行形狀解析而求出粗糙化處理面的界面的展開面積比Sdr及算術平均粗糙度Sa。 (H) Evaluation Various evaluations were performed on the copper foils of Examples 1 to 18 and Comparative Examples 1 to 11 produced in the above manner [Expanded area ratio Sdr and arithmetic mean roughness Sa of the interface of the roughened surface] The expanded area ratio Sdr and arithmetic mean roughness Sa of the interface of the roughened surface can be measured by the method specified in ISO 25178 using a three-dimensional white light interference microscope, a scanning electron microscope, an electron beam three-dimensional roughness analyzer, etc. For the copper foils of Examples 1 to 18 and Comparative Examples 1 to 11, the surface shape of the roughened surface was measured using a three-dimensional white light interference microscope Wyko ContourGT-K manufactured by BRUKER, and shape analysis was performed to obtain the interface development area ratio Sdr and arithmetic mean roughness Sa of the roughened surface.
表面形狀的測定是針對各銅箔實行任意5處,對該5處分別實行形狀解析,來求出5處各自的界面的展開面積比Sdr及算術平均粗糙度Sa。並且,將所獲得的5處的結果的平均值設為各銅箔的界面的展開面積比Sdr及算術平均粗糙度Sa。The surface shape was measured by performing shape analysis at 5 random locations on each copper foil to obtain the interface development area ratio Sdr and arithmetic mean roughness Sa of each of the 5 locations. The average of the results obtained at the 5 locations was set as the interface development area ratio Sdr and arithmetic mean roughness Sa of each copper foil.
形狀解析是使用高解析度CCD(Charge Coupled Device,電荷耦合元件)相機(解析度1280×980像素)並以VSI測定方式(垂直掃描型干涉法)來實行。條件為光源設為白光,測定倍率設為50倍,測定範圍設為96.1μm×72.1μm,閾值設為3%,進行圓筒及傾斜的項目去除(Terms Removal(Cylinder and Tilt))並利用數據恢復(Data Restore(方法:legacy、iterations 5))的過濾器處理後,實行傅立葉過濾(Fourier Filter)處理。Shape analysis was performed using a high-resolution CCD (Charge Coupled Device) camera (resolution 1280×980 pixels) and VSI measurement method (vertical scanning interferometry). The conditions were white light, 50x measurement magnification, 96.1μm×72.1μm measurement range, 3% threshold, and Fourier filter processing after performing cylinder and tilt terms removal (Terms Removal (Cylinder and Tilt)) and data recovery (Data Restore (method: legacy, iterations 5)) filter processing.
傅立葉過濾處理,是使用High Freq Pass作為傅立葉過濾器,在傅立葉過濾視窗(Fourier Filter Window)使用Gaussian(高斯軟體),並在截止頻率(Frequency Cutoff)中將低截止(Low Cutoff)設為62.5mm -1。 For Fourier filtering, High Freq Pass was used as the Fourier filter, Gaussian was used in the Fourier Filter Window, and the Low Cutoff was set to 62.5 mm -1 in the Frequency Cutoff.
界面的展開面積比Sdr,是利用混合模式S參數(S parameters-hybrid)解析以傾斜去除(Remove Tilt)為真的方式算出。算術平均粗糙度Sa,是利用高度模式S參數(S parameters-height)解析以傾斜去除(Remove Tilt)為真的方式算出。將結果表示於表2。The interface development area ratio Sdr was calculated by using the hybrid mode S parameter analysis (S parameters-hybrid) to remove the tilt (Remove Tilt) as true. The arithmetic mean roughness Sa was calculated by using the height mode S parameter analysis (S parameters-height) to remove the tilt (Remove Tilt) as true. The results are shown in Table 2.
[粗糙化處理面的十點平均粗糙度Rz] 針對實施例1~18及比較例1~11的銅箔的粗糙化處理面,依據日本工業規格JIS B 0601:2001的規定,測定十點平均粗糙度Rzjis(μm)。作為測定裝置,使用小坂研究所股份有限公司製造的接觸式表面粗糙度測定機Surfcorder SE1700。此外,測定是沿著與銅箔的長度方向正交的方向實行。將結果表示於表2。再者,上述所謂「長度方向」,意指電解銅箔的MD(Machine Direction,機器方向),例如當在製造電解銅箔時使用旋轉電極並藉由鍍覆將銅箔形成在旋轉電極的表面的情況下,意指旋轉電極的旋轉方向。 [Ten-point average roughness Rz of the roughened surface] For the roughened surfaces of the copper foils of Examples 1 to 18 and Comparative Examples 1 to 11, the ten-point average roughness Rzjis (μm) was measured in accordance with the provisions of Japanese Industrial Standards JIS B 0601:2001. As a measuring device, a contact surface roughness measuring machine Surfcorder SE1700 manufactured by Kosaka Laboratory Co., Ltd. was used. In addition, the measurement was carried out in a direction orthogonal to the length direction of the copper foil. The results are shown in Table 2. Furthermore, the so-called "longitudinal direction" refers to the MD (Machine Direction) of the electrolytic copper foil. For example, when a rotating electrode is used in manufacturing the electrolytic copper foil and the copper foil is formed on the surface of the rotating electrode by plating, it refers to the rotation direction of the rotating electrode.
[密合強度] 依據日本工業規格JIS C6481:1996所規定的方法實行常態剝離試驗。將樹脂製的基板接合於銅箔的粗糙化處理面,來作成覆銅積層板。作為樹脂製的基板,使用將2片低介電聚苯醚系樹脂薄膜(Panasonic股份有限公司製造的多層基板材料MEGTRON 7,厚度60μm)貼合而成者。再者,針對實施例1~6及比較例1~3的銅箔,在接合樹脂製的基板前以不實行整面研磨和微蝕刻的方式來製作覆銅積層板。 [Adhesion strength] A normal peeling test was performed according to the method specified in Japanese Industrial Standard JIS C6481:1996. A resin substrate was bonded to the roughened surface of a copper foil to produce a copper-clad laminate. As the resin substrate, two sheets of low-dielectric polyphenylene ether resin films (multi-layer substrate material MEGTRON 7 manufactured by Panasonic Co., Ltd., thickness 60 μm) were bonded together. Furthermore, for the copper foils of Examples 1 to 6 and Comparative Examples 1 to 3, the copper-clad laminate was produced without performing full-surface grinding and micro-etching before bonding to the resin substrate.
對該覆銅積層板黏貼遮蔽膠帶,在實行氯化銅蝕刻後去除遮蔽膠帶,製成具有寬度10mm的電路線路之印刷線路板。 繼而,在室溫環境中使用東洋精機製作所股份有限公司製的萬能試驗機(Tensilon tester),以50mm/分鐘的速度在90度方向上將印刷線路板的電路線路部分(銅箔部分)進行拉伸而從樹脂製的基板剝離,測定常態剝離強度並將其設為密合強度。將結果表示於表2。在表2中,當密合強度為0.7N/mm以上時表示為「A」,當為0.55N/mm以上且小於0.7N/mm時表示為「B」,當小於0.55N/mm時表示為「C」。 Masking tape was pasted on the copper-clad laminate, and the masking tape was removed after copper chloride etching to produce a printed circuit board with a circuit line of 10 mm in width. Then, the circuit line part (copper foil part) of the printed circuit board was stretched in a 90-degree direction at a speed of 50 mm/min using a universal testing machine (Tensilon tester) manufactured by Toyo Seiki Seisakusho Co., Ltd. in a room temperature environment to peel it off from the resin substrate, and the normal peel strength was measured and set as the adhesion strength. The results are shown in Table 2. In Table 2, when the adhesion strength is 0.7N/mm or more, it is indicated as "A", when it is 0.55N/mm or more and less than 0.7N/mm, it is indicated as "B", and when it is less than 0.55N/mm, it is indicated as "C".
[傳輸損耗] 使用實施例1~18及比較例1~11的銅箔與樹脂製的基板即低介電聚苯醚系樹脂薄膜(Panasonic股份有限公司製造的多層基板材料MEGTRON 7,厚度60μm),製作形成有帶線之印刷線路板,並評價傳輸特性。形成在印刷線路板的帶線的電路寬度為140μm,電路長為760mm。 [Transmission loss] Using the copper foil of Examples 1 to 18 and Comparative Examples 1 to 11 and a resin substrate, i.e., a low-dielectric polyphenylene ether resin film (multi-layer substrate material MEGTRON 7 manufactured by Panasonic Co., Ltd., thickness 60 μm), a printed circuit board with strip lines was produced and the transmission characteristics were evaluated. The circuit width of the strip lines formed on the printed circuit board was 140 μm and the circuit length was 760 mm.
使用Keysight Technologies公司製造的網路分析儀N5291A對形成在該印刷線路板的銅箔的電路傳輸高頻訊號來測定傳輸損耗。特性阻抗設為50Ω。傳輸損耗的測定值的絕對值越小,意指傳輸損耗越少,亦即高頻訊號能夠良好地傳輸。將結果表示於表2。表2中,當在30GHz中的傳輸損耗的絕對值小於28dB/760mm時表示為「A」,當為28dB/760mm以上且小於31dB/760mm時表示為「B」,當為31dB/760mm以上時表示為「C」。The transmission loss was measured by transmitting a high-frequency signal to the copper foil circuit formed on the printed circuit board using the network analyzer N5291A manufactured by Keysight Technologies. The characteristic impedance was set to 50Ω. The smaller the absolute value of the measured value of the transmission loss, the less the transmission loss, that is, the high-frequency signal can be transmitted well. The results are shown in Table 2. In Table 2, when the absolute value of the transmission loss at 30GHz is less than 28dB/760mm, it is represented as "A", when it is greater than 28dB/760mm and less than 31dB/760mm, it is represented as "B", and when it is greater than 31dB/760mm, it is represented as "C".
[耐遷移性試驗] 將實施例1~18及比較例1~11的銅箔與樹脂製的基板即低介電聚苯醚系樹脂薄膜(Panasonic股份有限公司製造的多層基板材料MEGTRON 7,厚度60μm)進行貼合,來製成加壓樣品。繼而,在該加壓樣品上形成適於IPC-B-25A規格的梳形電路,來製成印刷線路板。該梳形電路的線寬為0.318mm,線距為0.318mm,電路長為22mm。 [Migration resistance test] The copper foils of Examples 1 to 18 and Comparative Examples 1 to 11 were bonded to a resin substrate, i.e., a low-dielectric polyphenylene ether resin film (multi-layer substrate material MEGTRON 7 manufactured by Panasonic Co., Ltd., thickness 60 μm) to produce a pressurized sample. Then, a comb-shaped circuit suitable for IPC-B-25A specification was formed on the pressurized sample to produce a printed wiring board. The line width of the comb-shaped circuit is 0.318 mm, the line spacing is 0.318 mm, and the circuit length is 22 mm.
針對如此製成的印刷線路板,使用IMV公司製造的遷移測定機MIG-8600B並依據IPC-650-TM2.5.3所規定的方法來實行耐遷移性試驗,並評價線路圖案間的耐遷移性。亦即,在室溫環境下(23℃且50%RH)中測定印刷線路板的初期電阻值後,在50℃且90%RH的恆溫高濕槽內施加100V的直流電壓168小時(7天)。The printed circuit boards thus manufactured were subjected to migration resistance tests in accordance with the method specified in IPC-650-TM2.5.3 using the migration tester MIG-8600B manufactured by IMV, and the migration resistance between circuit patterns was evaluated. That is, after measuring the initial resistance value of the printed circuit board in a room temperature environment (23°C and 50%RH), a 100V DC voltage was applied in a constant temperature and high humidity tank at 50°C and 90%RH for 168 hours (7 days).
之後,將印刷線路板從恆溫高濕槽取出,在1小時內測定電阻值。將結果表示於表2。表2中,將當從恆溫高濕槽取出後所測定出的電阻值小於初期電阻值的50%時表示為「A」,為50%以上且小於60%時表示為「B」,當60%以上時表示為「C」。After that, the printed circuit board was taken out of the constant temperature and high humidity tank, and the resistance value was measured within 1 hour. The results are shown in Table 2. In Table 2, when the resistance value measured after being taken out of the constant temperature and high humidity tank is less than 50% of the initial resistance value, it is indicated as "A", when it is more than 50% and less than 60%, it is indicated as "B", and when it is more than 60%, it is indicated as "C".
[表2]
從表2可知,實施例1~18的粗糙化處理銅箔,其粗糙化處理面的界面的展開面積比Sdr為1000%且5000%以下,且粗糙化處理面的算術平均粗糙度Sa為0.04μm以上且0.6μm以下,因此,使用該粗糙化處理銅箔製成的印刷線路板,樹脂與粗糙化處理銅箔的密合性優異、傳輸損耗小且不易發生由於遷移所造成的短路。As can be seen from Table 2, the roughened copper foils of Examples 1 to 18 have an interface area ratio Sdr of the roughened surface of 1000% and below 5000%, and an arithmetic mean roughness Sa of the roughened surface of 0.04 μm or above and below 0.6 μm. Therefore, the printed circuit board made using the roughened copper foil has excellent adhesion between the resin and the roughened copper foil, low transmission loss, and is not prone to short circuits caused by migration.
相對於此,比較例1~11的銅箔的粗糙化處理面的界面的展開面積比Sdr及算術平均粗糙度Sa至少其中一項並未滿足上述要件。因此,使用該銅箔所製成的印刷線路板在樹脂與銅箔的密合性、傳輸損耗及由於遷移所造成的短路的發生容易性中的至少一者,比實施例1~18的粗糙化處理銅箔差。In contrast, at least one of the developed area ratio Sdr and the arithmetic mean roughness Sa of the roughened surface of the copper foil of Comparative Examples 1 to 11 does not meet the above requirements. Therefore, the printed circuit board made using the copper foil is inferior to the roughened copper foil of Examples 1 to 18 in at least one of the adhesion between the resin and the copper foil, the transmission loss, and the easiness of the occurrence of short circuits due to migration.
比較例7藉由實行電解鍍覆並將突起物形成於粗糙化顆粒的表面,來將凹凸形成於粗糙化顆粒的表面,因此認為突起物會集中並被形成於粗糙化顆粒的前端附近部分。因此認為,會藉由電解鍍覆部分地產生高度變大的粗糙化顆粒,而傳輸損耗會變大。Comparative Example 7 forms projections on the surface of the roughened particles by performing electrolytic plating, so that projections are formed on the surface of the roughened particles. Therefore, it is considered that projections are concentrated and formed near the tip of the roughened particles. Therefore, it is considered that roughened particles with increased height are partially generated by electrolytic plating, and transmission loss is increased.
實施例1~18的粗糙化處理銅箔藉由蝕刻將凹凸形成於粗糙化顆粒的表面,因此粗糙化高度不會變大,也會在粗糙化顆粒的整個表面均勻地形成凹凸。因此認為,可將傳輸損耗抑制得較低,提高樹脂與銅箔的密合性,並且也能夠抑制由於遷移所造成的短路。In the roughened copper foils of Examples 1 to 18, the roughening process forms the unevenness on the surface of the roughened particles by etching, so the roughening height does not increase, and the unevenness is formed uniformly on the entire surface of the roughened particles. Therefore, it is believed that the transmission loss can be suppressed to a low level, the adhesion between the resin and the copper foil can be improved, and the short circuit caused by migration can also be suppressed.
1:粗糙化顆粒 1a:凸部 3:原料銅箔的表面 11:旋轉電極 12:不溶性電極 13:電解液 14:電解銅箔 H:原料銅箔的表面3與粗糙化顆粒1的前端之間的距離 1: Roughened particles 1a: Protrusions 3: Surface of raw copper foil 11: Rotating electrode 12: Insoluble electrode 13: Electrolyte 14: Electrolytic copper foil H: Distance between the surface 3 of the raw copper foil and the tip of the roughened particles 1
第1圖是說明形成在本實施形態的粗糙化處理銅箔的粗糙化處理面的粗糙化顆粒的形狀及粗糙化高度的示意性剖面圖。 第2圖是說明使用電解析出裝置製造電解銅箔的方法的圖。 第3圖是說明本實施形態的粗糙化處理銅箔的製造方法的圖,並且是顯示藉由粗糙化鍍覆處理所形成的粗糙化顆粒的形狀的掃描式電子顯微鏡影像。 第4圖是說明本實施形態的粗糙化處理銅箔的製造方法的圖,並且是顯示形成在粗糙化顆粒的表面的凹凸的掃描式電子顯微鏡影像。 FIG. 1 is a schematic cross-sectional view illustrating the shape of roughened particles formed on the roughened surface of the roughened copper foil of the present embodiment and the roughening height. FIG. 2 is a view illustrating a method for manufacturing an electrolytic copper foil using an electrolytic deposition apparatus. FIG. 3 is a view illustrating a method for manufacturing a roughened copper foil of the present embodiment and is a scanning electron microscope image showing the shape of roughened particles formed by the roughening coating treatment. FIG. 4 is a view illustrating a method for manufacturing a roughened copper foil of the present embodiment and is a scanning electron microscope image showing the concavities and convexities formed on the surface of the roughened particles.
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic storage information (please note in the order of storage institution, date, and number) None Foreign storage information (please note in the order of storage country, institution, date, and number) None
1:粗糙化顆粒 1: Roughening particles
1a:凸部 1a: convex part
3:原料銅箔的表面 3: The surface of raw copper foil
H:原料銅箔的表面3與粗糙化顆粒1的前端之間的距離 H: The distance between the surface 3 of the raw copper foil and the front end of the roughened particle 1
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