[go: up one dir, main page]

TWI840813B - Wafer offset correction method for maskless exposure machine - Google Patents

Wafer offset correction method for maskless exposure machine Download PDF

Info

Publication number
TWI840813B
TWI840813B TW111119385A TW111119385A TWI840813B TW I840813 B TWI840813 B TW I840813B TW 111119385 A TW111119385 A TW 111119385A TW 111119385 A TW111119385 A TW 111119385A TW I840813 B TWI840813 B TW I840813B
Authority
TW
Taiwan
Prior art keywords
chips
chip
substrate
conductive
correction method
Prior art date
Application number
TW111119385A
Other languages
Chinese (zh)
Other versions
TW202347034A (en
Inventor
劉大有
賴建華
Original Assignee
青牛科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 青牛科技股份有限公司 filed Critical 青牛科技股份有限公司
Priority to TW111119385A priority Critical patent/TWI840813B/en
Publication of TW202347034A publication Critical patent/TW202347034A/en
Application granted granted Critical
Publication of TWI840813B publication Critical patent/TWI840813B/en

Links

Landscapes

  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

一種無光罩曝光機的晶片偏移校正方法,具有下列步驟,計算該等晶片在該基板黏接的位置,以定義出該等晶片在該基板上的座標;依該等晶片在該基板上的座標值,而於該等晶片之間劃分出分隔界限,以形成複數個對應容置該等晶片的黏接區;計算該等晶片位於其黏接區的導接線,並依此計算出各該導接線分別與相鄰晶片對應連接的導接線之間所跨越該分隔界限的一補償線;依各該導接線與各該補償線形成一數位曝光圖層。 A chip offset correction method for a maskless exposure machine comprises the following steps: calculating the positions of the chips bonded to the substrate to define the coordinates of the chips on the substrate; dividing the chips according to the coordinates of the chips on the substrate to form a plurality of bonding areas corresponding to the chips; calculating the conductive lines of the chips in the bonding areas, and calculating a compensation line between each conductive line and the conductive line corresponding to the adjacent chip that crosses the separation boundary; and forming a digital exposure layer according to each conductive line and each compensation line.

Description

無光罩曝光機的晶片偏移校正方法 Wafer offset correction method for maskless exposure machine

本發明與黃光微影製程有關,特別是指一種無光罩曝光機的晶片偏移校正方法。 The present invention is related to the yellow light lithography process, and in particular to a chip offset correction method for a maskless exposure machine.

現行的無光罩曝光技術是利用晶圓上塗佈光阻層,再利用數位圖案輸出對應圖形的紫外光照射在晶圓上,被紫外光照射過的光阻層之部分將容易溶解,之後進行顯影、蝕刻等工藝後,並去除剩餘的光阻層,即在晶圓上形成預設的圖形。 The current maskless exposure technology uses a photoresist layer on the wafer, and then uses the digital pattern to output the corresponding pattern of ultraviolet light to irradiate the wafer. The part of the photoresist layer irradiated by the ultraviolet light will be easily dissolved. After the development and etching processes, the remaining photoresist layer is removed, and the preset pattern is formed on the wafer.

然而在晶圓上已處理好的晶格進行黏晶時,晶片難免未黏在正確位置而有不對稱或歪斜的問題,尤其是異質晶片彼此形狀、大小不同,使異質晶片之間的導接線亦產生偏移或歪斜而造成各導接線難以連接的狀況,若直接將異質晶片對應的導接線相互連接,則容易使各導接線相互接觸干擾而導致短路的問題。 However, when the processed lattice on the wafer is bonded, the chip is inevitably not bonded in the correct position and has asymmetry or skew problems. In particular, the shapes and sizes of heterogeneous chips are different, which causes the conductive wires between heterogeneous chips to be offset or skewed, making it difficult to connect the conductive wires. If the conductive wires corresponding to the heterogeneous chips are directly connected to each other, it is easy for the conductive wires to contact and interfere with each other, resulting in short circuit problems.

有鑑於此,如何解決上述問題,即為本發明所欲解決之首要課題。 In view of this, how to solve the above problems is the primary issue that this invention aims to solve.

本發明之主要目的,在於提供一種無光罩曝光機的晶片偏移校正方法,其計算出跨越分隔界限的補償線使各晶片歪斜的導接線可對應連接,以達到校正因黏晶產生偏移所致誤差的功效。 The main purpose of the present invention is to provide a chip offset correction method for a maskless exposure machine, which calculates the compensation line across the separation boundary so that the skewed conductive lines of each chip can be connected correspondingly, so as to achieve the effect of correcting the error caused by the offset caused by die bonding.

為達前述之目的,本發明提供一種無光罩曝光機的晶片偏移校正方法,其中,複數個晶片結合在一基板上,該等晶片具有複數個接點,並分別於該等接點上預定曝光形成一導接線,包括有下列步驟:a.計算該等晶片在該基板黏接的位置,以定義出該等晶片在該基板上的座標;b.依該等晶片在該基板上的座標值,而於該等晶片之間劃分出分隔界限,以形成複數個對應容置該等晶片的黏接區;c.計算該等晶片位於其黏接區的導接線,並依此計算出各該導接線分別與相鄰晶片對應連接的導接線之間所跨越該分隔界限的一補償線;d.依各該導接線與各該補償線形成一數位曝光圖層。 To achieve the above-mentioned purpose, the present invention provides a chip offset correction method for a maskless exposure machine, wherein a plurality of chips are combined on a substrate, the chips have a plurality of contacts, and a conductive line is formed on each of the contacts by predetermined exposure, including the following steps: a. Calculating the positions of the chips bonded to the substrate to define the coordinates of the chips on the substrate; b. Delineating separation boundaries between the chips according to the coordinate values of the chips on the substrate to form a plurality of bonding areas corresponding to the chips; c. Calculating the conductive lines of the chips located in their bonding areas, and calculating a compensation line between each conductive line and the conductive line correspondingly connected to the adjacent chip that crosses the separation boundary; d. Forming a digital exposure layer according to each conductive line and each compensation line.

較佳地,該分隔界限為一虛擬線條,而劃分出該等黏接區。 Preferably, the separation boundary is a virtual line that demarcates the bonding areas.

較佳地,該分隔界限為一具有預定寬度之虛擬帶狀區域,而劃分出該等黏接區。 Preferably, the separation boundary is a virtual strip area with a predetermined width to demarcate the bonding areas.

較佳地,利用投影幾何計算該等晶片邊緣及端角的座標值,以測得該等晶片偏移後的形狀,據此劃分該分隔界限,並計算出各該導接線及各該補償線而形成該曝光圖層。 Preferably, the coordinate values of the edges and corners of the chips are calculated using projection geometry to measure the shapes of the chips after displacement, and the separation boundaries are divided accordingly, and each of the conductive lines and each of the compensation lines are calculated to form the exposure layer.

而本發明之上述目的與優點,不難從下述所選用實施例之詳細說明與附圖中獲得深入了解。 The above-mentioned purposes and advantages of the present invention can be easily understood from the detailed description and accompanying drawings of the following selected embodiments.

1:晶片 1: Chip

11:接點 11: Contact

12:導接線 12: Conducting wires

2:基板 2: Substrate

21:接孔 21: Connection hole

3:黏接區 3: Bonding area

31:分隔界限 31: Separating Boundaries

4:補償線 4: Compensation line

第1圖為本發明之步驟流程圖。 Figure 1 is a flow chart of the steps of the present invention.

第2圖為本發明基準圖檔之示意圖。 Figure 2 is a schematic diagram of the reference drawing of this invention.

第3圖為本發明校正後之結果示意圖。 Figure 3 is a schematic diagram of the results after calibration of the present invention.

第4圖為本發明分隔界限為一虛擬帶狀區域之影像示意圖。 Figure 4 is a schematic diagram showing that the separation boundary of the present invention is a virtual strip area.

首先,請參閱第1~3圖,為本發明所提供的無光罩曝光機的晶片偏移校正方法,其應用於複數個晶片1與一基板2之結合,其中,如第2圖所示,為一具有該等晶片1於該基板2上正確的形狀及位置等基準狀態資訊的基準圖檔,該等晶片1間隔地設在該基板2上,該等晶片1具有複數個接點11,該基板2具有複數個接孔21,該等接點11可分別預定曝光形成一導接線12,其中一部分的導接線12預定延伸至該基板2上對應的接孔21位置,而另一部分的導接線12預定與相鄰晶片1的導接線12相連接。 First, please refer to Figures 1 to 3, which are the chip offset correction method of the maskless exposure machine provided by the present invention, which is applied to the combination of multiple chips 1 and a substrate 2, wherein, as shown in Figure 2, there is a reference image file having reference state information such as the correct shape and position of the chips 1 on the substrate 2, the chips 1 are arranged on the substrate 2 at intervals, the chips 1 have multiple contacts 11, and the substrate 2 has multiple contact holes 21. The contacts 11 can be respectively predetermined to be exposed to form a conductive wire 12, wherein a part of the conductive wire 12 is predetermined to extend to the corresponding position of the contact hole 21 on the substrate 2, and another part of the conductive wire 12 is predetermined to be connected to the conductive wire 12 of the adjacent chip 1.

由於將晶片1黏晶在基板2上時難免會發生未黏在正確位置而有不對稱或歪斜的問題,使各晶片1之間的導接線12亦產生偏移或歪斜而造成部分的導接線12無法正確延伸至該基板2上對應的接孔21位置,而另一部分的導接線12則難以與相鄰晶片1的導接線12對應連接。 When the chip 1 is bonded to the substrate 2, it is inevitable that it will not be bonded in the correct position and there will be asymmetry or skewness, so that the conductive wires 12 between each chip 1 will also be offset or skewed, causing some conductive wires 12 to be unable to correctly extend to the corresponding connection hole 21 position on the substrate 2, and other conductive wires 12 are difficult to connect with the conductive wires 12 of the adjacent chip 1.

據此,請繼續參閱第1、3圖,而如第1圖所示,為本發明所提供無光罩曝光機的晶片偏移校正方法的步驟流程,首先以一預掃描手段取得含有該等晶片1形狀、位置的狀態資訊,於本實施例中,該掃描手段是利用投影幾何將三維空間中的各點投射至一個二維平面上,並將投射在平面上的各點連線而形成一幾何圖形,意即投射並計算該等晶片1的邊緣及端角在該基板2黏接的位置,以定義出該等晶片1在該基板2上的座標。 Accordingly, please continue to refer to Figures 1 and 3. As shown in Figure 1, the step flow of the chip offset correction method of the maskless exposure machine provided by the present invention is firstly to obtain the state information containing the shape and position of the chips 1 by a pre-scanning means. In this embodiment, the scanning means uses projection geometry to project each point in the three-dimensional space onto a two-dimensional plane, and connects each point projected on the plane to form a geometric figure, that is, to project and calculate the position where the edges and corners of the chips 1 are bonded to the substrate 2, so as to define the coordinates of the chips 1 on the substrate 2.

接著依據該等晶片1在該基板2上的座標值,測得該等晶片1偏移後的形狀及偏移量,而於該等晶片1之間劃分出分隔界限31,以形成複數個對應容置該等晶片1的黏接區3,該等晶片1之導接線12分別位在對應的黏接區3而不超出該分隔界限31,其中,該分隔界限31為一虛擬線條。 Then, according to the coordinate values of the chips 1 on the substrate 2, the shapes and offsets of the chips 1 after displacement are measured, and a separation boundary 31 is drawn between the chips 1 to form a plurality of bonding areas 3 corresponding to the chips 1. The conductive wires 12 of the chips 1 are respectively located in the corresponding bonding areas 3 without exceeding the separation boundary 31, wherein the separation boundary 31 is a virtual line.

而後計算預先曝光在該等晶片1且位於其黏接區3的導接線12,並依此計算出各該導接線12分別與相鄰晶片1對應連接的導接線12之間所跨越該分隔界限31的一補償線4,該補償線4銜接各該導接線12與對應的導接線12,據此隨著晶片1歪斜而連同歪斜的導接線12可由該補償線4連接至相鄰黏接區3中對應的導接線12。 Then, the conductive wires 12 pre-exposed on the chips 1 and located in their bonding areas 3 are calculated, and accordingly, a compensation line 4 is calculated that crosses the separation boundary 31 between each conductive wire 12 and the conductive wire 12 correspondingly connected to the adjacent chip 1. The compensation line 4 connects each conductive wire 12 and the corresponding conductive wire 12. Accordingly, as the chip 1 tilts, the tilted conductive wire 12 can be connected to the corresponding conductive wire 12 in the adjacent bonding area 3 by the compensation line 4.

最後依據各該導接線12與各該補償線4形成一數位曝光圖層,並進行曝光、顯影、蝕刻,進而在該等晶片1之間形成連續無斷差的佈線,以生成所需的線路圖。 Finally, a digital exposure layer is formed based on each of the conductive lines 12 and each of the compensation lines 4, and then exposed, developed, and etched to form a continuous and uninterrupted wiring between the chips 1 to generate the required circuit diagram.

須特別說明的是,如第4圖所示,該分隔界限31可為一具有預定寬度之虛擬帶狀區域,而各該補償線4垂直地跨越該分隔界限31,使各該補償線4於該分隔界限31內互呈平行設置而具有整束的效果,避免各晶片1歪斜的導接線12由於其配置密集而造成補償線4互相干擾的問題。 It should be particularly noted that, as shown in FIG. 4 , the separation boundary 31 can be a virtual strip region with a predetermined width, and each compensation line 4 vertically crosses the separation boundary 31, so that each compensation line 4 is arranged parallel to each other in the separation boundary 31 and has a beam-forming effect, thereby avoiding the problem of the compensation lines 4 interfering with each other due to the dense arrangement of the skewed conductive wires 12 of each chip 1.

此外,對於各接點11偏移的校正方法是將該預掃描手段取得的含有該等晶片1形狀、位置的狀態資訊,與該基準圖檔中的各晶片1於該基板2上正確的形狀及位置等基準狀態資訊進行比對,經比對後可得出兩者的差異,進而算出將基準狀態修正為與晶片1實際形狀、位置一致的補償值,再依該補償值計算出補償線4,使導接線12可如第3圖所示地藉由該補償線4連接至對應的接孔21位置,並在晶片1的各接點11與對應的接孔21之間形成連續無斷差的佈線,以校正因黏晶產生接點11偏移正確位置所致的誤差。 In addition, the correction method for the deviation of each contact 11 is to compare the state information containing the shape and position of the chips 1 obtained by the pre-scanning means with the reference state information such as the correct shape and position of each chip 1 on the substrate 2 in the reference image file. After the comparison, the difference between the two can be obtained, and then the compensation value for correcting the reference state to be consistent with the actual shape and position of the chip 1 is calculated. Then, the compensation line 4 is calculated according to the compensation value, so that the conductive wire 12 can be connected to the corresponding position of the contact hole 21 through the compensation line 4 as shown in Figure 3, and a continuous and uninterrupted wiring is formed between each contact 11 of the chip 1 and the corresponding contact hole 21 to correct the error caused by the deviation of the correct position of the contact 11 due to die bonding.

藉由上述本發明之校正方法,使各晶片1歪斜的導接線12透過跨越分隔界限31的補償線4對應連接,避免因歪斜的導接線12直接連接,導致相互接觸干擾而造成短路的問題,以達到校正因黏晶產生偏移所致誤差的功效。 By using the correction method of the present invention, the skewed conductive wires 12 of each chip 1 are connected correspondingly through the compensation wires 4 crossing the separation boundary 31, avoiding the problem of short circuit caused by direct connection of the skewed conductive wires 12, which causes mutual contact interference, so as to achieve the effect of correcting the error caused by the offset of the die bonding.

以上實施例之揭示僅用以說明本發明,並非用以限制本發明,故舉凡數值之變更或等效元件之置換仍應隸屬本發明之範疇。 The disclosure of the above embodiments is only used to illustrate the present invention, not to limit the present invention, so any changes in numerical values or replacement of equivalent components should still fall within the scope of the present invention.

綜上所述,當可使熟知本項技藝者明瞭本發明確可達成前述目的,實已符合專利法之規定,故依法提出申請。 In summary, those who are familiar with this technology should be able to understand that this invention can indeed achieve the above-mentioned purpose and actually complies with the provisions of the Patent Law, so they can apply for it in accordance with the law.

Claims (4)

一種無光罩曝光機的晶片偏移校正方法,其中,複數個晶片結合在一基板上,該等晶片具有複數個接點,並分別於該等接點上預定曝光形成一導接線,包含有下列步驟:a.計算該等晶片在該基板黏接的位置,以定義出該等晶片在該基板上的座標;b.依該等晶片在該基板上的座標值,而於該等晶片之間劃分出分隔界限,以形成複數個對應容置該等晶片的黏接區,該等晶片之導接線分別位在對應的黏接區而不超出該分隔界限;c.計算該等晶片位於其黏接區的導接線,並依此計算出各該導接線分別與相鄰晶片對應連接的導接線之間所跨越該分隔界限的一補償線,各該補償線之兩端分別與相鄰其中一晶片之導接線相連接;d.依各該導接線與各該補償線形成一數位曝光圖層。 A chip offset correction method for a maskless exposure machine, wherein a plurality of chips are bonded to a substrate, the chips have a plurality of contacts, and a conductive line is formed on the contacts respectively by predetermined exposure, comprising the following steps: a. calculating the positions of the chips bonded to the substrate to define the coordinates of the chips on the substrate; b. drawing separation boundaries between the chips according to the coordinate values of the chips on the substrate to form a plurality of corresponding The bonding area of the chips is accommodated, and the conductive wires of the chips are respectively located in the corresponding bonding area without exceeding the separation boundary; c. Calculate the conductive wires of the chips located in their bonding area, and calculate a compensation line across the separation boundary between each conductive wire and the conductive wire correspondingly connected to the adjacent chip, and the two ends of each compensation line are respectively connected to the conductive wire of one of the adjacent chips; d. Form a digital exposure layer according to each conductive wire and each compensation line. 如請求項1所述之無光罩曝光機的晶片偏移校正方法,其中,該分隔界限為一虛擬線條,而劃分出該等黏接區。 The chip offset correction method of the maskless exposure machine as described in claim 1, wherein the separation boundary is a virtual line to divide the bonding areas. 如請求項1所述之無光罩曝光機的晶片偏移校正方法,其中,該分隔界限為一具有預定寬度之虛擬帶狀區域,而劃分出該等黏接區。 The chip offset correction method of the maskless exposure machine as described in claim 1, wherein the separation boundary is a virtual strip area with a predetermined width, which divides the bonding areas. 如請求項1所述之無光罩曝光機的晶片偏移校正方法,其中,利用投影幾何計算該等晶片邊緣及端角的座標值,以測得該等晶片偏移後的形狀,據此劃分該分隔界限,並計算出各該導接線及各該補償線而形成該數位曝光圖層。 The chip offset correction method of the maskless exposure machine as described in claim 1, wherein the coordinate values of the chip edges and corners are calculated using projection geometry to measure the shape of the chip after offset, and the separation boundary is divided accordingly, and each of the conductive lines and each of the compensation lines are calculated to form the digital exposure layer.
TW111119385A 2022-05-25 2022-05-25 Wafer offset correction method for maskless exposure machine TWI840813B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW111119385A TWI840813B (en) 2022-05-25 2022-05-25 Wafer offset correction method for maskless exposure machine

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW111119385A TWI840813B (en) 2022-05-25 2022-05-25 Wafer offset correction method for maskless exposure machine

Publications (2)

Publication Number Publication Date
TW202347034A TW202347034A (en) 2023-12-01
TWI840813B true TWI840813B (en) 2024-05-01

Family

ID=90039365

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111119385A TWI840813B (en) 2022-05-25 2022-05-25 Wafer offset correction method for maskless exposure machine

Country Status (1)

Country Link
TW (1) TWI840813B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102971674A (en) * 2010-02-26 2013-03-13 密克罗尼克麦达塔公司 Method and apparatus for performing pattern alignment
JP2013058520A (en) * 2011-09-07 2013-03-28 Dainippon Screen Mfg Co Ltd Lithography apparatus, data correction apparatus, method for forming re-wiring layer, and method for correcting data
TW201915624A (en) * 2017-08-08 2019-04-16 成真股份有限公司 Logic drive based on standardized commodity programmable logic semiconductor ic chips

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102971674A (en) * 2010-02-26 2013-03-13 密克罗尼克麦达塔公司 Method and apparatus for performing pattern alignment
JP2013058520A (en) * 2011-09-07 2013-03-28 Dainippon Screen Mfg Co Ltd Lithography apparatus, data correction apparatus, method for forming re-wiring layer, and method for correcting data
TW201915624A (en) * 2017-08-08 2019-04-16 成真股份有限公司 Logic drive based on standardized commodity programmable logic semiconductor ic chips

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
期刊 Boettcher et al., "High Density RDL Technologies for Panel Level Packaging of Embedded Dies", SMTA Journal, Volume 34 Issue 2, 2021, pages 23 to 29 *
期刊 Boettcher et al., "High Density RDL Technologies for Panel Level Packaging of Embedded Dies", SMTA Journal, Volume 34 Issue 2, 2021, pages 23 to 29。

Also Published As

Publication number Publication date
TW202347034A (en) 2023-12-01

Similar Documents

Publication Publication Date Title
US9032342B2 (en) Method and apparatus for alignment optimization with respect to plurality of layers
US8530120B2 (en) Method and apparatus for performing pattern reconnection after individual or multipart alignment
JP7249994B2 (en) Method for aligning a photolithographic mask and corresponding process for manufacturing integrated circuits on a wafer of semiconductor material
JP5792431B2 (en) Manufacturing method of semiconductor device
JP6730851B2 (en) Determination method, formation method, program, and article manufacturing method
CN101789386B (en) Wafer Alignment Method
JP5082902B2 (en) Photomask manufacturing method, photomask manufacturing apparatus, and photomask
TWI840813B (en) Wafer offset correction method for maskless exposure machine
TWI380139B (en) Method for wafer alignment
JP2013071455A (en) Printed circuit board and method for manufacturing the same
TW201305720A (en) Optical proximity correction method
KR100904732B1 (en) How to measure the degree of alignment using misalignment mark
US12326657B2 (en) Chip deviation correction method for maskless exposure machine
CN117234037A (en) Wafer offset correction method for maskless exposure machine
JP2009271174A (en) Mask pattern forming method and pattern forming method
US20220343492A1 (en) Detection pattern unit for a semiconductor device, and method and system for detecting a pattern on a semiconductor device using the detection pattern unit
TWI787795B (en) Pattern detection method and pattern detection system for semiconductor manufacturing process
CN117410276A (en) Optical measurement structure of semiconductor device and measurement method thereof
CN107024841B (en) A kind of lithographic optical formula overlay measurement pattern structure
CN114167681A (en) Defect detection method, mask manufacturing method and semiconductor structure forming method
CN114217504B (en) Mask optimization method
JP4634929B2 (en) Photomask, shot overlay accuracy measuring method, and semiconductor device manufacturing method
JPH0864502A (en) Photomask for producing semiconductor device
TWI810039B (en) Method of forming a semiconductor structure
TW202505319A (en) Alignment method, substrate manufacturing method, alignment mark forming method and program