TWI733014B - Manufacturing method of sealing film, electronic part device, and electronic part device - Google Patents

Abstract

The present invention discloses a sealing film, which is used to seal electronic parts, The sealing film includes a sealing resin layer having a first resin layer and a second resin layer, the first resin layer contains a first thermosetting resin and a first inorganic filler, and the second resin layer contains a second resin layer. Thermosetting resin and second inorganic filler. The curing shrinkage rate of the second resin layer is greater than the curing shrinkage rate of the first resin layer, and the second resin layer has a sealing surface facing the electronic component side when the electronic component is sealed.

Description

Manufacturing method of sealing film, electronic part device, and electronic part device

The present invention relates to a sealing film, in particular to a sealing film, a method for manufacturing electronic component devices such as semiconductor devices using the sealing film, and electronic component devices. The sealing film can be used for sealing semiconductor elements such as semiconductor wafers, etc. Or embedding of electronic components arranged on a printed circuit board.

Along with the lighter, thinner, shorter and smaller electronic devices, semiconductor devices are also developing towards miniaturization and thinning. In addition, a package on package such as a semiconductor device approximately the same size as a semiconductor wafer, or a package on package in which semiconductor devices are stacked on the semiconductor device is also popular. Therefore, it can be predicted that the miniaturization and thinning of semiconductor devices will further develop in the future.

If the semiconductor wafer is becoming more compact and the number of terminals increases, it will become difficult to provide all external connection terminals on the semiconductor wafer. For example, when a large number of terminals for external connection are provided, the pitch between the terminals will be narrowed and the height of the terminals will be low, making it difficult to ensure the connection reliability of the assembled semiconductor device. Therefore, in order to achieve miniaturization and thinning of semiconductor devices, many new packaging methods have been proposed.

For example, the following packaging method and semiconductor devices manufactured using the packaging method have been proposed (for example, refer to Patent Documents 1 to 4). The packaging method is to rearrange semiconductor wafers at appropriate intervals and then use solid or The liquid sealing resin is sealed, and then the sealing resin part of the obtained sealing molding is further provided with terminals for external connection. The semiconductor wafer is made of a semiconductor wafer and singulated.

The sealing of the reconfigured semiconductor wafer is usually carried out by molding using a liquid or solid resin sealing material. In the above-mentioned packaging method, the steps of forming a circuit and forming a terminal for external connection can be implemented for the sealed molded article made by sealing, and these steps are used for arranging the terminal for external connection.

Since the steps of forming wiring and external terminals are performed for the sealed molded product, the more semiconductor wafers that are relocated, the more semiconductor devices that can be manufactured in one step. Therefore, studies are underway to increase the size of the sealed molded product. For example, in order to correspond to the use of a semiconductor manufacturing apparatus when forming a circuit, a sealed molded product may be formed into a wafer shape. At this time, the size of the wafer is increased to simplify the manufacturing process and reduce the cost (for example, refer to Patent Documents 5 and 6). On the other hand, in order to be able to further increase the size and to use a printed wiring board manufacturing apparatus which is cheaper than a semiconductor manufacturing apparatus, etc., research is also being conducted to form a panel of a sealed molded article.

[Previous Patent Document] (Patent Document)

Patent Document 1: Japanese Patent No. 3616615

Patent Document 2: Japanese Patent Application Publication No. 2001-244372

Patent Document 3: Japanese Patent Application Publication No. 2001-127095

Patent Document 4: Specification of US Patent Application Publication No. 2007/205513

Patent Document 5: Japanese Patent No. 5385247

Patent Document 6: Japanese Patent Laid-Open No. 2012-224062

However, when the size of the sealed molded article is increased, when the thermosetting sealing resin is cooled to room temperature, the problem of warpage of the sealed molded article caused by this will tend to become significant. The warpage generated in the sealed molded product may cause positional deviation in the dicing step and the rewiring step, and reduce the reliability of the package. In addition, if the warpage is large, for example, it may be difficult to form an insulating resin layer for rewiring: when the insulating resin for rewiring is a liquid material, it is impossible to fix the sealed molded article to the coating. Defects on the coating jig of the cloth liquid material.

In view of the foregoing, the object of the present invention is to provide: a sealing film capable of sufficiently suppressing the warpage of the sealed molded article; and, a method of manufacturing an electronic component device and an electronic component device using the method and device Seal the film.

An embodiment of the present invention provides a sealing film for sealing electronic parts, the sealing film is provided with a sealing resin layer, and the sealing The resin layer has a first resin layer and a second resin layer, the first resin layer contains a first thermosetting resin and a first inorganic filler, and the second resin layer contains a second thermosetting resin and a second inorganic filler . The second resin layer has a sealing surface that faces the electronic component side when sealing the electronic component, and the second resin layer and the first resin layer are laminated in order from the sealing surface side. The curing shrinkage rate of the second resin layer is greater than the curing shrinkage rate of the first resin layer.

The sealing film of one embodiment of the present invention can sufficiently suppress the warpage of the sealed molded article by having the above-mentioned structure.

The ratio of the curing shrinkage rate of the second resin layer to the curing shrinkage rate of the first resin layer may exceed 1 and be less than 10.

The first thermosetting resin and the second thermosetting resin may be the same epoxy resin or different epoxy resins.

In another embodiment of the present invention, there is provided a method of manufacturing an electronic component device, which includes a step of embedding the electronic component, which heats the sealing resin of the sealing film of the one embodiment of the present invention. Layer, and pressing the electronic parts arranged opposite to the sealing surface of the sealing resin layer, thereby embedding the electronic parts in the sealing resin layer; and, the step of forming a sealing portion, which hardens the sealing resin layer to form a seal The cured product of the resin layer is the sealing part where the electronic parts are sealed.

Another aspect of the present invention provides an electronic component device, which includes an electronic component and a sealing portion in which the electronic component is sealed. The sealing portion may be a cured product of the sealing resin layer of the sealing film of the present invention. The electronic component may be surrounded by the cured product of the second resin layer in the sealing portion.

Regarding the electronic component device and the manufacturing method thereof, the electronic component may include a semiconductor wafer. At this time, the electronic component device is generally a semiconductor device.

According to an embodiment of the present invention, it is possible to provide a sealing film which can sufficiently suppress the warpage of the sealed molded article. In addition, it is also possible to provide a method of manufacturing an electronic component device, which is a semiconductor device using the sealing film, and the like; and, an electronic component device, which is a semiconductor device, or the like.

1: The first resin layer

1a: Hardened product of the first resin layer

2: The second resin layer

2a: Cured material of the second resin layer

3: Resin sealing material

3a: Hardened resin sealing material

10: Sealing film (sealing resin layer)

10a: Hardened material of the sealing resin layer

20: Semiconductor wafer

30: substrate

40: Temporarily fix the material

50: Insulation layer

52: Patterned insulating layer

54: Line

56: Solder ball

60: cutting machine

100: Sealed molding

200: Semiconductor device

2S: sealing surface

Figure 1 is a schematic cross-sectional view showing a sealing film of one embodiment.

Figure 2 (a) is a schematic cross-sectional view of the sealed molded product after the semiconductor wafer is sealed with the conventional single-layer sealing film; Figure 2 (b) is the sealing film of one embodiment with different curing shrinkage rates to seal the semiconductor A schematic cross-sectional view of the sealed molded product after the wafer.

Fig. 3 is a schematic cross-sectional view for explaining one embodiment of a method of manufacturing a semiconductor device.

Fig. 4 is a schematic cross-sectional view for explaining one embodiment of a method of manufacturing a semiconductor device.

Hereinafter, the embodiments of the present invention will be described in detail while referring to the drawings as appropriate. However, the present invention is not limited to the following embodiments.

Figure 1 is a schematic cross-sectional view showing a sealing film of one embodiment. The sealing film of this embodiment is a sealing film for sealing electronic parts, and includes a sealing resin layer 10 having a two-layer structure composed of a first resin layer 1 and a second resin layer 2. A resin layer 1 contains a first thermosetting resin and a first inorganic filler, and the second resin layer 2 contains a second thermosetting resin and a second inorganic filler. The main surface on the side of the second resin layer 2 is the sealing surface 2S, which faces the electronic component side when the electronic component is sealed.

The curing shrinkage rate of the second resin layer 2 is greater than the curing shrinkage rate of the first resin layer 1. By using such a sealing film to seal electronic components, even in the case of a large-sized sealed molded article, it is possible to suppress warpage of the sealed molded article when the sealing film is heated to room temperature after being cured by heat. Furthermore, it is possible to seal electronic components with good embedding properties.

The reason for obtaining such an effect is not particularly limited, but the present inventor believes that it is as follows. First of all, in general sealing with a resin sealing material, the coefficient of linear expansion of the sealed body such as a semiconductor chip and the coefficient of linear expansion of the resin sealing material are different, so when the resin sealing material is cured by heat, the temperature will be restored to At room temperature, there is a big difference between the shrinkage of the resin sealing material and the shrinkage of the sealed body. For example, when a silicon wafer is used as a semiconductor wafer and an epoxy resin sealing material is used to make a sealed product, the linear expansion coefficient of the silicon wafer is 3.4 ppm/℃, and the linear expansion coefficient of the epoxy resin sealing material is even in inorganic filling. When the agent is filled with a higher ratio, it is still about 6ppm/℃. With such a difference in linear expansion coefficient, the amount of heat shrinkage between the silicon wafer and the epoxy resin sealing material is also Will make a difference. Therefore, for example, as shown in FIG. 2(a), in the sealed molded article 100 obtained by sealing the semiconductor wafer 20 with a single-layer sealing film 3, normally, the resin sealing material is on the side of the cured product 3a, that is, there is no The side where the semiconductor wafer 20 with a small shrinkage amount is buried may warp in the recessed direction.

In contrast, in the case of the sealing film of this embodiment, it is considered that when the semiconductor wafer 20 is buried on the side of the second resin layer 2 as shown in FIG. 2(b), compared with the first resin layer 1, the second The amount of thermal shrinkage of the second resin layer 2 is large, so the total amount of thermal shrinkage of the second resin layer 2 and the semiconductor wafer 20 becomes a value close to the amount of thermal shrinkage of the first resin layer 1. After heat curing, the warpage caused by the thermal shrinkage of the cured product 1a of the first resin layer will cancel each other out with the warpage caused by the thermal shrinkage of the cured product 2a of the second resin layer. As a result, it can be suppressed The warpage of the sealed molded product 100, which is composed of the cured product of the sealing film, that is, the sealing portion 10a and the semiconductor wafer 20 sealed by the sealed portion 10a.

In addition, with regard to the sealing film of this embodiment, the second resin layer with a higher curing shrinkage rate tends to have a relatively higher resin layer during curing by heating than the first resin layer with a lower curing shrinkage rate. fluidity. Therefore, by embedding the electronic component on the second resin layer side, the electronic component can also be sealed with good embedding properties, which means that the occurrence of underfilling can be suppressed.

Furthermore, in the case of the sealing film of the present embodiment, since it is not restricted by the elastic modulus of the first resin layer and the second resin layer, it is possible to apply a material with a higher modulus of elasticity as the thermosetting resin. because Therefore, the sealing film of the present embodiment has excellent handling properties and is also excellent from the viewpoint of less likely to cause the following problems: positional deviation of electronic parts such as semiconductor wafers, and due to the installation of a rewiring layer The warpage caused by the stress of the rewiring layer.

The curing shrinkage rate of the first resin layer and the second resin layer can be determined by the following method based on the change in the specific gravity of each resin layer before and after heat curing, for example. When the specific gravity of the resin layer at 23°C before heating and curing is d ₀ and the specific gravity of the resin layer cooled to 23°C after heating and curing is d ₁ , the curing shrinkage rate can be obtained by the following formula: Hardening shrinkage (%)={(d ₁ -d ₀ )/d ₁ }×100. Heat hardening is performed under a specific pressure (for example, 3MPa). The heating conditions for heat curing are adjusted so that the resin layer is sufficiently cured and the volume change due to curing does not substantially occur. In addition, the curing shrinkage rate can also be obtained from the volume change of each resin layer before and after heating and curing. Specifically, it can be determined based on the ratio of the difference in volume change before and after heat curing to the volume of each resin layer before heat curing. For example, using a pressure-volume-temperature (PVT) tester, it is possible to obtain the curing shrinkage rate (shrinkage amount) from the volume change with respect to temperature of the sample filled in the resin layer of the mold. At this time, by maintaining the sample at the curing temperature until the sample does not substantially change in volume, the curing shrinkage rate can be obtained. The curing shrinkage rate is not only the shrinkage accompanying the curing reaction of the thermosetting resin, but also the shrinkage caused by the reduction of the constituent materials due to the volatilization of the solvent and the accompanying curing treatment.

The ratio of the curing shrinkage rate of the second resin layer to the curing shrinkage rate of the first resin layer is not particularly limited as long as it is greater than 1. From the viewpoint of more effectively suppressing the warpage of the sealed molded article, it may be 1.05 or more, 1.10 or more or 1.15 or more. The upper limit of the ratio of the curing shrinkage rate of the second resin layer to the curing shrinkage rate of the first resin layer is not particularly limited, and is less than 10, for example.

The curing shrinkage rate of the first resin layer may be, for example, 0.4% or less, 0.3% or less, or 0.2% or less from the viewpoint of suppressing warpage and dimensional stability of the molded product.

The curing shrinkage rate of the second resin layer may be, for example, 0.2% or more, 0.3% or more, or 0.4% or more from the viewpoint of more effectively correcting warpage by curing shrinkage. The curing shrinkage rate of the second resin layer may be 2.0% or less, 1.5% or less, or 1.0% or less from the viewpoint of the dimensional stability of the molded product, for example.

The method of adjusting the curing shrinkage rate of the first resin layer and the second resin layer is not particularly limited. For example, the curing shrinkage rate of the first resin layer and the second resin layer can be adjusted by one or more selected from the following methods: selecting different types of thermosetting resins as the first resin layer contains The method of the first curable resin and the second curable resin contained in the second resin layer; the method of changing the type and/or content of the curing agent or the curing catalyst; and the method of forming the first resin layer and the second resin The method of changing the degree of thermal history during the layering process to adjust the hardening rate.

When the thermal history is used, the curing rate can be increased by increasing the thermal history in the process of forming the resin layer. Generally speaking, If the hardening rate becomes higher, the hardening shrinkage rate of heat hardening from its state tends to decrease. The magnitude of the thermal history can be adjusted by, for example, the drying temperature and drying time used to form the first resin layer and the second resin layer. It is also possible to relatively increase the curing rate of the first resin layer by applying a varnish-like resin composition for forming the second resin layer on the first resin layer, and making the varnish after coating When the shaped resin composition is heated together with the first resin layer, the thermal history received by the first resin layer can be greater than the thermal history received by the second resin layer. The curing rate can be evaluated based on the curing calorific value measured by a differential scanning calorimeter, for example. Based on the curing calorific value of the resin composition (solvent-free or varnish) used to form the resin layer as a reference (curing rate 0%), it can be obtained from the ratio of the curing calorific value of the resin layer to the above-mentioned reference Hardening rate.

The thickness of the first resin layer and the second resin layer is not particularly limited, and for example, each may be 30 to 800 μm, 50 to 500 μm, or 80 to 300 μm. As long as the thickness is 30 μm or more, it is particularly easy to obtain good embedding properties of electronic parts. As long as the thickness is 800 μm or less, the effects of the present invention can be obtained at a higher level. The thickness of the first resin layer and the second resin layer may be the same or different from each other. When they are different, the thickness of the first resin layer may be greater than The thickness of the second resin layer is thinner. The total thickness of the first resin layer and the second resin layer (the thickness of the sealing resin layer) is not particularly limited, and may be 50 to 1000 μm.

The first resin layer contains a first thermosetting resin and a first inorganic filler, and the second resin layer contains a second thermosetting resin and a second inorganic filler. Filler. The first thermosetting resin and the second thermosetting resin may be the same or different from each other, but by combining different thermosetting resins, they can be used to combine the first resin layer and the second resin layer. The hardening shrinkage rate is set to a different method. The first thermosetting resin and the second thermosetting resin may each be a thermosetting resin described below. Here, the "same" means that the structures of the compounds that are thermosetting resins are substantially the same.

The thermosetting resin may be a compound that can form a cross-linked structure by a thermosetting reaction. Examples thereof include epoxy resins, phenol resins, unsaturated amide resins, cyanate ester resins, Isocyanate resin, benzoxazine resin, oxetane resin, amine resin, unsaturated polyester resin, allyl resin, dicyclopentadiene resin, silicone resin, triazine resin, and Melamine resin. These may be used individually by 1 type, and may use 2 or more types together. These thermosetting resins can be combined with a curing agent and/or curing catalyst as needed. From the viewpoints of excellent fluidity and suitable for embedding of electronic parts, epoxy resins can be used.

The epoxy resin is not particularly limited, as long as it is a compound having two or more epoxy groups (or glycidyl groups) in one molecule. As the epoxy resin, for example, bisphenol A type epoxy resin, bisphenol AP type epoxy resin (1,1-bis(4-hydroxyphenyl)-1-phenylethane diglycidyl ether) ), bisphenol AF type epoxy resin (2,2-bis(4-hydroxyphenyl) hexafluoropropane diglycidyl ether), bisphenol B type epoxy resin (2,2-bis(4-hydroxyl Phenyl) butane diglycidyl ether), bisphenol BP type epoxy resin (bis(4-hydroxyphenyl) two Phenylmethane diglycidyl ether), bisphenol C type epoxy resin (2,2-bis(3-methyl-4-hydroxyphenyl) propane diglycidyl ether), bisphenol E type epoxy Resin (1,1-bis(4-hydroxyphenyl)ethane diglycidyl ether), bisphenol F type epoxy resin, bisphenol G type epoxy resin (2,2-bis(4-hydroxy- 3-isopropylphenyl) propane diglycidyl ether), bisphenol M type epoxy resin (1,3-bis[2-(4-hydroxyphenyl)-2-propyl]benzene diglycidyl Base ether), bisphenol P-type epoxy resin (1,4-bis(2-(4-hydroxyphenyl)-2-propyl)benzenediglycidyl ether), bisphenol PH-type epoxy resin (5,5'-(1-methylethylene)-bis[1,1'-(diphenyl)-2-ol]propane diglycidyl ether), bisphenol TMC epoxy resin (1, 1-bis(4-hydroxyphenyl)-3,3,5-trimethylcyclohexane diglycidyl ether), bisphenol Z type epoxy resin (1,1-bis(4-hydroxyphenyl) ) Cyclohexane diglycidyl ether), bisphenol S type epoxy resin such as hexanediol bisphenol S diglycidyl ether, novolac type epoxy resin (phenol novolac type epoxy resin, etc.) , Biphenyl type epoxy resin, biphenyl arylene type epoxy resin, naphthalene type epoxy resin, epoxides of condensation products of phenols and aromatic aldehydes with phenolic hydroxyl groups, dicyclopentadiene type epoxy resins , Bixylenol type epoxy resins such as dicyclopentadiene arethane type epoxy resin, bixylenol diglycidyl ether, hydrogenated bisphenols such as hydrogenated bisphenol A glycidyl ether Type A epoxy resin, and diglycidyl ether type epoxy resin modified by dibasic acid; Ginseng (2,3-epoxypropyl) isocyanate; and, aliphatic ring Oxy resin.

As the epoxy resin, commercially available products can be used. Examples of commercially available epoxy resins include EXA4700 (4-functional naphthalene type epoxy resin) manufactured by DIC Co., Ltd., and NC-7000 (multifunctional solid epoxy resin containing naphthalene skeleton) manufactured by Nippon Kayaku Co., Ltd. ) Naphthalene type epoxy resins, etc.; EPPN-502H (triphenol epoxy resin) manufactured by Nippon Kayaku Co., Ltd. Epoxides of condensation products of phenols and aromatic aldehydes with phenolic hydroxyl groups; DIC Co., Ltd. Dicyclopentadiene arane type epoxy resin such as EPICLON HP-7200H (multifunctional solid epoxy resin containing dicyclopentadiene skeleton) manufactured by the company; NC-3000H (containing biphenyl) manufactured by Nippon Kayaku Co., Ltd. Multifunctional solid epoxy resin of the skeleton) and other biphenylarane type epoxy resins; EPICLON N660 and EPICLON N690 manufactured by DIC Co., Ltd., and novolac type epoxy resins such as EOCN-104S manufactured by Nippon Kayaku Co., Ltd. Resins; TEPIC and other ginseng isocyanate (2,3-epoxypropyl) esters manufactured by Nissan Chemical Industry Co., Ltd., EPICLON 860, EPICLON 900-IM, EPICLON EXA-4816, and EPICLON EXA-4816 manufactured by DIC Co., Ltd. EPICLON EXA-4822, Araldite AER280 manufactured by ASAHI-CIBA Co., Ltd., Epotec YD 134 manufactured by Toto Chemical Co., Ltd., jER834, jER872 manufactured by Mitsubishi Chemical Co., Ltd., ELA-134 manufactured by Sumitomo Chemical Co., Ltd., Mitsubishi EPIKOTE 807, EPIKOTE 815, EPIKOTE 825, EPIKOTE 827, EPIKOTE 828, EPIKOTE 834, EPIKOTE 1001, EPIKOTE 1004, EPIKOTE 1007, EPIKOTE 1009, EPIKOTE 1009, Dow Chemical DER-330, DER-301, DER-361, YD8125, YDF8170 manufactured by Dongdu Chemical Co., Ltd. Bisphenol A epoxy resin; Mitsubishi Chemical Co., Ltd. jER 806, etc. Bisphenol F Type epoxy resin; Naphthalene type epoxy resin such as EPICLON HP-4032 manufactured by DIC Co., Ltd.; Naphthalene type epoxy resin such as EPICLON HP-4032 manufactured by DIC Co., Ltd.; EPICLON N-type epoxy resin manufactured by DIC Co., Ltd. 740 and other phenol novolac type epoxy resins; DENACOL DLC301 and other aliphatic epoxy resins manufactured by NAGASE CHEMTEX Co., Ltd. (the above are all commercial models). These epoxy resins may be used individually by 1 type, and may use 2 or more types together.

The content of the first thermosetting resin in the first resin layer is calculated on the basis of the total amount of the first resin layer from the viewpoint of sufficiently ensuring the film formability even in the presence of the inorganic filler described later. It may be 5% by mass or more, 10% by mass or more, or 15% by mass or more. From the viewpoint of further reducing the curing shrinkage, the content of the first thermosetting resin in the first resin layer may be 40% by mass or less, 30% by mass or less based on the total amount of the first resin layer. 20% by mass or less.

The content of the second thermosetting resin in the second resin layer may be 10% by mass based on the total amount of the second resin layer from the viewpoint of more effectively correcting the warpage caused by curing shrinkage , 15% by mass or more or 20% by mass or more. From the viewpoint of the dimensional stability of the sealed molded product, the content of the second thermosetting resin in the second resin layer, based on the total amount of the second resin layer, may be 45% by mass or less and 35% by mass. Or less than 30% by mass.

The curing agent that can be combined with the thermosetting resin is not particularly limited. For example, when an epoxy resin is used as the thermosetting resin, the curing agent It may be a compound having two or more reactive groups capable of reacting with epoxy groups (glycidyl groups) in one molecule. The curing agent may be used singly, or two or more of them may be used in combination.

Examples of the curing agent include phenol resins, acid anhydrides, imidazole compounds, aliphatic amines, and alicyclic amines.

The phenol resin is not particularly limited as long as it is a compound having two or more phenolic hydroxyl groups in one molecule. Examples of phenol resins include resins obtained by condensing or co-condensing phenolic compounds or naphthol compounds with aldehyde compounds under an acidic catalyst. The aforementioned phenols are phenol, cresol, xylenol, m- Hydroquinone, catechol, bisphenol A and bisphenol F, etc. The aforementioned naphthols are α-naphthol, β-naphthol, dihydroxy naphthalene, etc., and the aforementioned aldehydes are formaldehyde, acetaldehyde, propionaldehyde, Benzaldehyde and salicaldehyde, etc.; biphenyl skeleton type phenol resin; p-xylene modified phenol resin; meta-xylene/p-xylene modified phenol resin; melamine modified phenol resin; terpene modified phenol resin; dicyclopentadiene Ane-modified phenol resin; cyclopentadiene-modified phenol resin; polycyclic aromatic ring-modified phenol resin; and xylene modified naphthol resin, etc.

As the phenol resin, a commercially available product can be used. Examples of commercially available phenol resins include: PHENOLITE LF 2882, PHENOLITE LF 2822, PHENOLITE TD-2090, PHENOLITE TD-2149, PHENOLITE VH-4150, and PHENOLITE VH4170 manufactured by Dainippon Ink Chemical Industry Co., Ltd.; Asahi Organic Materials PAPS-PN2 manufactured by Industrial Co., Ltd.; XLC-LL manufactured by Mitsui Chemicals Co., Ltd. and XLC-4L; SN-100, SN-180, SN-300, SN-395 and SH-400 manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.; Tris P-HAP, Tris P- manufactured by Honshu Chemical Industry Co., Ltd. PA, Tris P-PHBA, CyRS-PRD4 and MTPC; SK resin HE910-10 manufactured by Air Water Co., Ltd. (all the above are commercial models).

The content of the hardener is not particularly limited. For example, when an epoxy resin is used as a thermosetting resin and a phenol resin is used as the hardener, the equivalent ratio of epoxy groups to phenolic hydroxyl groups (epoxy groups/phenolic hydroxyl groups) , Can be 0.5~3.0 or 1.0~1.5. In the case of other hardeners, the equivalent ratio of epoxy group to epoxy group reactive group (epoxy group/epoxy group reactive group) can be 0.5 to 3.0 or 1.0 to 1.5 .

The curing catalyst that can be combined with the epoxy resin is not particularly limited, but an amine-based, imidazole-based, urea-based, or phosphorus-based curing catalyst is preferred. Examples of the amine-based curing catalyst include 1,8-diazabicyclo[5.4.0]-7-undecene, 1,5-diazabicyclo[4.3.0]-5-nonene, and the like. Examples of the imidazole-based curing catalyst include 2-ethyl-4methylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, and the like. As a urea curing catalyst, 3-phenyl-1,1-dimethylurea etc. are mentioned. Examples of phosphorus-based hardening catalysts include: triphenylphosphine and its addition reactants, (4-hydroxyphenyl)diphenylphosphine, bis(4-hydroxyphenyl)phenylphosphine, and ginseng (4-hydroxyphenyl)phosphine Wait. Among these, the imidazole-based hardening accelerators are abundant in derivatives and easily obtain the desired activation temperature. As a microphone Commercial products of the azole-based hardening accelerator include, for example, 2PHZ-PW and 2P4MZ manufactured by Shikoku Chemical Industry Co., Ltd.

The content of the curing catalyst is not particularly limited. For example, it may be 0.05 to 1.0 parts by mass or 0.1 to 0.5 parts by mass relative to 100 parts by mass of the total amount of the thermosetting resin.

The first inorganic filler and the second inorganic filler may be of the same type or different types.

Examples of inorganic fillers include: barium sulfate, barium titanate, amorphous silica, crystalline silica, fused silica, spherical silica, talc, clay, magnesium carbonate, calcium carbonate, oxide Particles of aluminum, aluminum hydroxide, silicon nitride, aluminum nitride, etc. From the viewpoint of having a small thermal expansion coefficient and easily obtaining desired cured film characteristics, the inorganic filler is preferably silica particles. An inorganic filler may be used individually by 1 type, and may use 2 or more types together. The shape of the inorganic filler is not limited to the spherical shape, and may be flake (plate shape) or fibrous shape. The second inorganic filler contained in the second resin layer may be a spherical inorganic filler that can easily obtain fluidity from the viewpoint of embedding properties of electronic components.

Inorganic fillers can be surface modified. The method of surface modification is not particularly limited. The method of using a silane coupling agent is simple and can use a silane coupling agent with a wide variety of functional groups, and it is easy to impart desired characteristics. As the silane coupling agent, for example, alkyl silane, alkoxy silane, vinyl silane, epoxy silane, amino silane, propylene Silyl silane, methacryl silane, mercapto silane, sulfide silane, isocyanate silane, thio silane, styryl silane, and alkyl chlorosilane.

Specific examples of the silane coupling agent include: methyltrimethoxysilane, dimethyldimethoxysilane, trimethylmethoxysilane, methyltriethoxysilane, methyltriphenoxysilane , Ethyltrimethoxysilane, n-propyltrimethoxysilane, diisopropyldimethoxysilane, isobutyltrimethoxysilane, diisobutyldimethoxysilane, isobutyltriethoxy N-hexyltrimethoxysilane, n-hexyltrimethoxysilane, n-hexyltriethoxysilane, cyclohexylmethyldimethoxysilane, n-octyltriethoxysilane, n-dodecylmethoxysilane, phenyltrimethyl Oxysilane, diphenyldimethoxysilane, triphenylsilanol, methyltrichlorosilane, dimethyldichlorosilane, trimethylchlorosilane, n-octyldimethylchlorosilane, tetraethoxy Silane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-(2-aminoethyl)aminopropyltrimethoxysilane, 3-(2-aminoethyl) Aminopropylmethyldimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethyldimethyl Oxysilane, 3-glycidoxypropyltriethoxysilane, bis[3-(triethoxysilyl)propyl] disulfide, bis[3-(triethoxysilyl) Propyl]tetrasulfide, vinyl triethoxy silane, vinyl trimethoxy silane, vinyl triethoxy silane, vinyl triisopropoxy silane, allyl trimethoxy silane, diene Propyldimethylsilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltriethoxy Silane, 3-mercaptopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-mercaptopropyltriethyl Oxysilane, N-(1,3-dimethylbutylene)-3-aminopropyltriethoxysilane and aminosilane. These silane coupling agents may be used individually by 1 type, and may use 2 or more types together.

The average particle size of the inorganic filler is not particularly limited, and it can be, for example, 0.01 to 50 μm. The average particle size of the inorganic filler can be measured, for example, by the laser diffraction scattering method.

The content of the first inorganic filler in the first resin layer can be 60% by mass or more, 70% by mass or more, or 80% by mass based on the total amount of the first resin layer from the viewpoint of reducing the amount of heat shrinkage. %above. From the viewpoint of sufficiently ensuring film formation, the content of the first inorganic filler in the first resin layer may be 95% by mass or less, 90% by mass or less based on the total amount of the first resin layer. 85% by mass or less.

The content of the second inorganic filler in the second resin layer may be 55% by mass or more and 65% by mass or more based on the total amount of the second resin layer from the viewpoint of the dimensional stability of the sealed molded product. Or more than 70% by mass. From the viewpoint of sufficiently ensuring film formation, the content of the second inorganic filler in the second resin layer may be 95% by mass or less, 90% by mass or less based on the total amount of the second resin layer. 85% by mass or less.

The first resin layer and the second resin layer may contain components other than the above-mentioned components. Such components may be those generally used for sealing films. Examples thereof include antioxidants, flame retardants, ion scavengers, pigments, dyes, silane coupling agents, and elastomers.

The sealing film may further include a film-like support. At this time, the first resin layer and the second resin layer can usually be provided in order from the support side. The support is not particularly limited as long as it can be removed after sealing. For example, it can be a polymer film or a metal foil.

Examples of polymer films that can be used as a support include: polyolefin films such as polyethylene films and polypropylene films; polyester films such as polyethylene terephthalate; polyvinyl chloride films; polycarbonates Ester film; cellulose acetate film; polyimide film; polyamide film; and, tetrafluoroethylene film. Examples of the metal foil that can be used as a support include copper foil and aluminum foil.

The film-like support may be formed by a mold release process in order to facilitate peeling. As a method of the mold release treatment, for example, a method of applying a mold release agent to the surface of the support and drying it is mentioned. Examples of mold release agents include silicone-based, fluorine-based, and olefin-based mold release agents. The metal foil may be formed by etching its surface with acid or the like.

The thickness of the film-like support is not particularly limited, and it may be 2 to 200 μm from the viewpoint of workability and drying properties when forming a resin layer by coating. As long as the thickness of the support is 2 μm or more, when the varnish-like resin composition is applied to form a resin layer, the support may be damaged or the support may be deformed due to the weight of the varnish-like resin composition. As long as the thickness of the support is 200μm or less, even when using a dryer that mainly blows hot air from the coating surface and the back surface for drying, the varnish-like resin composition can be dried efficiently (removal of organic solvents) .

The sealing film, for the purpose of protecting the first resin layer and the second resin layer, may be further provided with a protective layer (for example, a protective film), which covers the main surface, and the main surface is located in the sealing resin layer (or the second resin layer). Layer) on the opposite side of the support. By providing the protective layer, the handling of the sealing film can be improved, and when the sealing film is wound, it is possible to avoid the disadvantage that the resin layer adheres to the back surface of the support.

It does not specifically limit as a protective layer, For example, the same thing as the support body exemplified in the above-mentioned film shape can be used.

The thickness of the protective layer is not particularly limited, but from the viewpoint of a sufficient protective effect and reduction of the thickness when the sealing film is wound into a roll, it may be, for example, 12 to 100 μm.

The sealing film of this embodiment can be manufactured by, for example, forming the first resin layer and the second resin layer separately, and bonding them together; or sequentially forming the first resin layer and the second resin layer on a film-like support. The resin layer and the second resin layer.

The first resin layer and the second resin layer can be formed by mixing the respective constituent components, and then forming the obtained resin composition into a film. It is also possible to prepare a varnish-like resin composition by adding an organic solvent to the resin composition to be film-formed, and apply it on the support and dry the coating film to form the first resin layer and the second resin layer. Resin layer. The application of the varnish-like resin composition to the support and the drying of the coating film can be carried out continuously while supplying the support from a roll of the support, for example. The curing shrinkage rate of the first resin layer and the second resin layer can be adjusted by the drying conditions at this time.

The warpage of the sealed molded article obtained by using the sealing film can be evaluated, for example, using a substrate for evaluation of a wafer-level package or a similar wafer-level package. At this time, it is also possible to simultaneously evaluate the embedding properties of the semiconductor wafer.

Next, the manufacturing method of the electronic component device using the sealing film of this embodiment is demonstrated. Hereinafter, an embodiment of a method of manufacturing a semiconductor device which is a representative example of electronic components and has a semiconductor wafer will be specifically described.

3 and 4 are schematic cross-sectional views showing one embodiment of a method of manufacturing a semiconductor device. The method of this embodiment includes the following steps: a temporary fixing step (Figure 3(a)), which attaches a temporary fixing material 40 to a substrate 30, and temporarily fixing a plurality of semiconductor wafers 20 to the temporary fixing material 40 On; the embedding step (Figure 3 (b) and (c)), which will temporarily fix the semiconductor wafer 20 and the sealing film (sealing resin layer) 10, the semiconductor wafer 20 and the sealing surface 2S of the sealing resin layer 10 They are overlapped in the oppositely arranged direction (the direction in which the sealing surface 2S of the second resin layer 2 is in contact with the semiconductor wafer 20), and in this state, they are pressed under heating to bury the semiconductor wafer 20 In the sealing resin layer 10, the sealing film 10 has a first resin layer 1 and a second resin layer 2 provided on the first resin layer 1; and, a curing step (Figure 3 (c)), which makes The sealing film 10 in which the semiconductor wafer 20 is embedded is hardened. By hardening, the sealing portion 10a can be formed, which is composed of the hardened material 1a of the first resin layer and the hardened material 2a of the second resin layer, and the semiconductor wafer 20 can be sealed. In the seal In the portion 10a, the boundary line between the cured product 1a of the first resin layer and the cured product 2a of the second resin layer may be inconspicuous.

In the method of this embodiment, a lamination method may be used to press the sealing film, or a compression mold method may be used.

The laminate used in the laminate method is not particularly limited, and examples thereof include laminates of a roll type, a ballon type, and the like. Among these, from the viewpoint that the embedding property can be further improved, a bladder type capable of vacuum pressurization can be adopted.

The temperature for embedding the semiconductor wafer (for example, the lamination temperature) can be adjusted in such a way that the sealing resin layer 10 (especially the second resin layer 2) flows and can be embedded in the semiconductor wafer. This temperature is set to be equal to or lower than the softening point of the support when it has a support. In addition, the temperature may be the temperature at which the second resin layer exhibits the lowest melt viscosity or a temperature near it. The pressure used to embed the semiconductor chip can vary according to the size or density of the semiconductor chip (or electronic component), for example, it can be 0.2 to 1.5 MPa or 0.3 to 1.0 MPa. The pressing time is not particularly limited, and it can be 20 to 600 seconds, 30 to 300 seconds, or 40 to 120 seconds.

The curing of the sealing resin layer (the first resin layer and the second resin layer) can be carried out, for example, under the atmosphere or under an inert gas. The curing temperature is not particularly limited, and may be 80 to 280°C, 100 to 240°C, or 120 to 200°C. As long as the curing temperature is 80°C or higher, the sealing film can be cured sufficiently, and in particular, the occurrence of defects can be effectively suppressed. When the hardening temperature is below 280℃, it can suppress heat damage to other materials Harmful. The curing time is not particularly limited, and it can be 30 to 600 minutes, 45 to 300 minutes, or 60 to 240 minutes. As long as the curing time is within this range, the curing of the sealing resin layer can proceed sufficiently, and good production efficiency can be obtained. The curing conditions may be a combination of a plurality of conditions different in temperature and/or time.

Embedding the electronic component (semiconductor wafer 20) in the sealing resin layer 10 and hardening the sealing resin layer 10 to form the sealing portion 10a may be separate steps, or may be performed simultaneously or continuously. For example, by pressing while heating the sealing resin layer and the electronic component, the electronic component is embedded in the sealing resin layer and the sealing resin layer is hardened, thereby forming a sealing portion in which the electronic component is sealed.

In this embodiment, a semiconductor device can be obtained through the following steps of forming an insulating layer, forming a circuit pattern, ball mounting, and dicing. In order to perform these steps with high accuracy and efficiently, it is desirable that the warpage of the sealed molded product 100 is small.

First, the temporary fixing material 40 is peeled from the substrate 30 to obtain a sealed molded product 100 (Fig. 4(a)). The sealed molded product 100 is composed of a semiconductor wafer 20 and a sealing portion 10a, and the sealing portion 10a is sealed with a semiconductor. Wafer 20. The semiconductor wafer 20 is exposed in one of the main surfaces of the sealing molding 100. An insulating layer 50 is provided on the main surface of the sealed molded product on the side of the semiconductor wafer 20 exposed (Fig. 4(b)). Then, the wiring 54 is formed by patterning the insulating layer 50, and solder balls 56 are mounted on the patterned insulating layer 52 (Fig. 4(c)).

Then, the sealed molded product is singulated by the cutter 60 (Fig. 4 (d) and (e)). Thereby, a semiconductor device 200 can be obtained that includes a semiconductor wafer 20 and a sealing portion 10a that is a cured product of a sealing resin layer that is the sealing film of this embodiment. In the semiconductor device 200, the semiconductor wafer 20 is embedded in the sealing portion 10a so as to be surrounded by the cured product 2a of the second resin layer in the sealing portion 10a.

In the foregoing, suitable embodiments of the sealing film of the present invention and the method of manufacturing semiconductor devices and electronic component devices have been described. However, the present invention is not limited to the above-mentioned embodiments, and can be implemented without departing from the scope of the gist. Appropriate changes.

[Example]

Hereinafter, the present invention will be explained in more detail through examples, but the present invention is not limited to these examples.

{Production of sealing film}

The following materials are prepared as the components constituting the sealing film.

[Thermosetting resin]

A1: Bisphenol F epoxy resin (manufactured by Mitsubishi Chemical Corporation, jER806/epoxy equivalent: 160)

[hardener]

B1: Phenolic novolac resin (manufactured by Asahi Organic Material Industry Co., Ltd., PAPS-PN2/hydroxyl equivalent: 104)

B2: Trimethane phenol resin (manufactured by Benzhou Chemical Industry Co., Ltd., TrisP-HAP/hydroxyl equivalent: 102)

[Inorganic filler]

C1: Silicon dioxide (manufactured by Admatechs Co., Ltd., SX-E2, anilinosilane treatment/average particle size 5.8μm)

[Hardening catalyst]

D1: Imidazole (manufactured by Shikoku Chemical Industry Co., Ltd., 2PHZ-PW)

[Organic solvents]

E1: Methyl ethyl ketone

(Example 1)

Put 497.5 g of organic solvent E1 in a 10L (10 liter) plastic container, and add 3500 g of inorganic filler C1 to it, and then use a stirring blade to disperse the inorganic filler C1 in the organic solvent. In this dispersion, 300 g of thermosetting resin A1 and 460 g of hardener B1 were added, and the dispersion was stirred. After visually confirming that the thermosetting resin A1 and the curing agent B1 were dissolved, 2.5 g of the curing catalyst D1 was added, and the dispersion was further stirred for 1 hour. The dispersion was filtered with nylon #200 mesh (mesh, pore diameter 75 μm) to obtain a filtrate as a varnish-like resin composition.

Using a coater and using the following conditions, the obtained varnish-like resin composition was coated on a film-like support (38μm thick polyethylene terephthalate), and the support and the coating film were The specific drying speed passes through the drying oven, whereby the coating film is dried to form the first resin layer or the second resin layer (thickness 100 μm) on the support, respectively. The coating and drying speed means the moving speed of the support. Temperature and drying conditions The length of the furnace means the temperature in the drying furnace and the moving distance of the support in the drying furnace. These conditions are the same in other embodiments and comparative examples.

(First resin layer)

Coating head method: comma.

Coating and drying speed: 2m/min.

Drying conditions (temperature/furnace length): 110°C/3.3m, 130°C/3.3m, 140°C/3.3m.

(Second resin layer)

Coating head method: missing angle wheel type.

Coating and drying speed: 3m/min.

Drying conditions (temperature/furnace length): 90°C/3.3m, 110°C/3.3m, 120°C/3.3m.

The first resin layer and the second resin layer are bonded together by a vacuum laminator to obtain a sealing film having a sealing resin layer having a two-layer structure including a first resin layer and a second resin layer.

(Example 2)

Except that the amount of the curing catalyst D1 was changed from 2.5 g to 7.5 g, the varnish-like resin composition was produced by the same method as in Example 1. Using a coater and using the following conditions, the obtained varnish-like resin composition was coated on a film-like support (38μm thick polyethylene terephthalate), and the support and the coating film were The specific drying speed passes through the drying oven, thereby drying the coating film, and forming the first resin layer (thickness 100 μm) on the support.

Coating head method: missing angle wheel type.

Coating and drying speed: 2m/min.

Drying conditions (temperature/furnace length): 110°C/3.3m, 130°C/3.3m, 140°C/3.3m.

The varnish-like resin composition was produced by the same method as in Example 1. Using a coater and using the following conditions, the obtained varnish-like resin composition was coated on a film-like support (38μm thick polyethylene terephthalate), and the support and the coating film were The specific drying speed passes through the drying oven, whereby the coating film is dried, and the second resin layer (thickness 100 μm) is formed on the support.

Coating head method: missing angle wheel type.

Coating and drying speed: 2m/min.

Drying conditions (temperature/furnace length): 90°C/3.3m, 110°C/3.3m, 120°C/3.3m.

The first resin layer and the second resin layer are bonded together by a vacuum laminator to obtain a sealing film having a sealing resin layer having a two-layer structure including a first resin layer and a second resin layer.

(Example 3)

Except that the amount of the curing catalyst D1 was changed from 2.5 g to 7.5 g, the varnish-like resin composition was produced by the same method as in Example 1. Using a coater and using the following conditions, the obtained varnish-like resin composition was coated on a film-like support (38μm thick polyethylene terephthalate), and the support and the coating film were The specific drying speed passes through the drying oven, thereby drying the coating film, and forming the first resin layer (thickness 100 μm) on the support.

Coating head method: missing angle wheel type.

Coating and drying speed: 3m/min.

Drying conditions (temperature/furnace length): 110°C/3.3m, 130°C/3.3m, 140°C/3.3m.

The varnish-like resin composition was produced by the same method as in Example 1. Using a coater and using the following conditions, the obtained varnish-like resin composition was coated on a film-like support (38μm thick polyethylene terephthalate), and the support and the coating film were The specific drying speed passes through the drying oven, whereby the coating film is dried, and the second resin layer (thickness 100 μm) is formed on the support.

Coating head method: missing angle wheel type.

Coating and drying speed: 2m/min.

Drying conditions (temperature/furnace length): 90°C/3.3m, 110°C/3.3m, 120°C/3.3m.

The first resin layer and the second resin layer are bonded together by a vacuum laminator to obtain a sealing film having a sealing resin layer having a two-layer structure including a first resin layer and a second resin layer.

(Example 4)

The varnish-like resin composition was produced by the same method as in Example 1. Using a coater and under the following conditions, the obtained varnish-like resin composition was coated on a film-like support (38μm thick polyethylene terephthalate), and the coating film was dried to The first resin layer (thickness 100 μm) was formed on the support.

Coating head method: missing angle wheel type.

Coating and drying speed: 2m/min.

Drying conditions (temperature/furnace length): 90°C/3.3m, 110°C/3.3m, 120°C/3.3m.

The varnish-like resin composition was produced by the same method as in Example 1. Using a coater and using the following conditions, the obtained varnish-like resin composition was coated on a film-like support (38μm thick polyethylene terephthalate), and the support and the coating film were The specific drying speed passes through the drying oven, whereby the coating film is dried, and the second resin layer (thickness 100 μm) is formed on the support.

Coating head method: missing angle wheel type.

Coating and drying speed: 2.5m/min.

Drying conditions (temperature/furnace length): 90°C/3.3m, 110°C/3.3m, 120°C/3.3m.

(Example 5)

The varnish-like resin composition was produced by the same method as in Example 1. Using a coater and using the following conditions, the obtained varnish-like resin composition was coated on a film-like support (38μm thick polyethylene terephthalate), and the support and the coating film were The specific drying speed passes through the drying oven, thereby drying the coating film, and forming the first resin layer (thickness 100 μm) on the support.

Coating head method: missing angle wheel type.

Coating and drying speed: 2m/min.

Drying conditions (temperature/furnace length): 90°C/3.3m, 110°C/3.3m, 120°C/3.3m.

Put 497.5g of organic solvent E1 in a 10L plastic container, and add 3500g of inorganic filler C1 in it, and then use a stirring blade to disperse the inorganic filler C1 in the organic solvent. In this dispersion liquid, 296 g of thermosetting resin A1 and 464 g of hardener B2 were added, and the dispersion liquid was stirred. After visually confirming that the thermosetting resin A1 and the curing agent B2 were dissolved, 2.5 g of the curing catalyst D1 was added, and the dispersion was further stirred for 1 hour. The dispersion was filtered with nylon #200 mesh (mesh, pore diameter 75 μm) to obtain a filtrate as a varnish-like resin composition.

Using a coater and using the following conditions, the obtained varnish-like resin composition was coated on a film-like support (38μm thick polyethylene terephthalate), and the support and the coating film were The specific drying speed passes through the drying oven, whereby the coating film is dried, and the second resin layer (thickness 100 μm) is formed on the support.

Coating head method: missing angle wheel type.

Coating and drying speed: 3m/min.

Drying conditions (temperature/furnace length): 90°C/3.3m, 110°C/3.3m, 120°C/3.3m.

(Example 6)

Put 497.5g of organic solvent E1 in a 10L plastic container, and add 3350g of inorganic filler C1 into it, and then use a stirring blade to disperse the inorganic filler C1 in the organic solvent. In this dispersion, add 360g of thermosetting resin A1, 550g of hardener B1, and stir to separate Dispersion. After visually confirming that the thermosetting resin A1 and the curing agent B1 were dissolved, 3.0 g of the curing catalyst D1 was added, and the dispersion was further stirred for 1 hour. The dispersion was filtered with nylon #200 mesh (mesh, pore diameter 75 μm) to obtain a filtrate as a varnish-like resin composition.

Using a coater and using the following conditions, the obtained varnish-like resin composition was coated on a film-like support (38μm thick polyethylene terephthalate), and the support and the coating film were The specific drying speed passes through the drying oven, thereby drying the coating film, and forming the first resin layer (thickness 100 μm) on the support.

Coating head method: missing angle wheel type.

Coating and drying speed: 3m/min.

Drying conditions (temperature/furnace length): 90°C/3.3m, 110°C/3.3m, 120°C/3.3m.

Put 497.5g of organic solvent E1 in a 10L plastic container, and add 3200g of inorganic filler C1 in it, and then use a stirring blade to disperse the inorganic filler C1 in the organic solvent. In this dispersion, 419 g of thermosetting resin A1 and 641 g of hardener B1 were added, and the dispersion was stirred. After visually confirming that the thermosetting resin A1 and the curing agent B1 were dissolved, 3.5 g of the curing catalyst D1 was added, and the dispersion was further stirred for 1 hour. The dispersion was filtered with nylon #200 mesh (mesh, pore diameter 75 μm) to obtain a filtrate as a varnish-like resin composition.

Using a coater and using the following conditions, the obtained varnish-like resin composition was coated on a film-like support (38μm thick polyethylene terephthalate), and the support and the coating film were Specific drying speed The temperature passes through the drying oven to dry the coating film to form the second resin layer (thickness 100 μm) on the support.

Coating head method: missing angle wheel type.

Coating and drying speed: 3m/min.

Drying conditions (temperature/furnace length): 90°C/3.3m, 110°C/3.3m, 120°C/3.3m.

(Comparative example 1)

Using a coater and using the following conditions, the same varnish-like resin composition as in Example 1 was coated on a film-like support (38μm thick polyethylene terephthalate), and the support was combined with The coating film passes through the drying oven at a specific drying speed, whereby the coating film is dried, and the first resin layer and the second resin layer (thickness 100 μm) are each formed on the support.

(First resin layer)

Coating head method: missing angle wheel type.

Coating and drying speed: 3m/min.

Drying conditions (temperature/furnace length): 90°C/3.3m, 110°C/3.3m, 120°C/3.3m.

(Second resin layer)

Coating head method: missing angle wheel type.

Coating and drying speed: 2m/min.

Drying conditions (temperature/furnace length): 110°C/3.3m, 130°C/3.3m, 140°C/3.3m.

The first resin layer and the second resin layer are bonded together by a vacuum laminator to obtain a sealing film having a sealing resin layer having a two-layer structure including a first resin layer and a second resin layer.

(Comparative example 2)

Using a coater and using the following conditions, the same varnish-like resin composition as in Example 1 was coated on a film-like support (38μm thick polyethylene terephthalate), and the support was combined with The coating film passes through the drying oven at a specific drying speed, whereby the coating film is dried, and the first resin layer (thickness 100 μm) is formed on the support.

Coating head method: missing angle wheel type.

Coating and drying speed: 2m/min.

Drying conditions (temperature/furnace length): 90°C/3.3m, 110°C/3.3m, 120°C/3.3m.

Except that the amount of the curing catalyst D1 was changed from 2.5 g to 7.5 g, the varnish-like resin composition was produced by the same method as in Example 1. Using a coater and using the following conditions, the obtained varnish-like resin composition was coated on a film-like support (38μm thick polyethylene terephthalate), and the support and the coating film were The specific drying speed passes through the drying oven, whereby the coating film is dried, and the second resin layer (thickness 100 μm) is formed on the support.

Coating head method: missing angle wheel type.

Coating and drying speed: 2m/min.

Drying conditions (temperature/furnace length): 110°C/3.3m, 130°C/3.3m, 140°C/3.3m.

The first resin layer and the second resin layer are bonded together by a vacuum laminator to obtain a sealing film having a sealing resin layer having a two-layer structure including a first resin layer and a second resin layer.

(Comparative example 3)

The varnish-like resin composition was produced by the same method as in Example 1. Using a coater and using the following conditions, the obtained varnish-like resin composition was coated on a film-like support (38μm thick polyethylene terephthalate), and the support and the coating film were The specific drying speed passes through the drying oven, thereby drying the coating film, and forming the first resin layer (thickness 100 μm) on the support.

Coating head method: missing angle wheel type.

Coating and drying speed: 2m/min.

Drying conditions (temperature/furnace length): 90°C/3.3m, 110°C/3.3m, 120°C/3.3m.

Using a coater and using the following conditions, the same varnish-like resin composition as in Example 1 was coated on a film-like support (38μm thick polyethylene terephthalate), and the support was combined with The coating film passes through the drying oven at a specific drying speed, whereby the coating film is dried, and the second resin layer (thickness 100 μm) is formed on the support.

Coating head method: missing angle wheel type.

Coating and drying speed: 1.5m/min.

Drying conditions (temperature/furnace length): 90°C/3.3m, 110°C/3.3m, 120°C/3.3m.

The first resin layer and the second resin layer are bonded together by a vacuum laminator to obtain a sealing film having a sealing resin layer having a two-layer structure including a first resin layer and a second resin layer.

(Comparative Example 4)

Using a coater and under the following conditions, the same varnish-like resin composition as in Example 1 was coated on a film-like support (38μm thick polyethylene terephthalate) to make the support and the coating The film passes through the drying oven at a specific drying speed, whereby the coating film is dried to form a resin layer (thickness 100 μm) on the support.

Coating head method: missing angle wheel type.

Coating and drying speed: 2m/min.

Drying conditions (temperature/furnace length): 90°C/3.3m, 110°C/3.3m, 120°C/3.3m.

The obtained two resin layers were bonded together using a vacuum laminator to obtain a sealing film having a sealing resin layer, which had a one-layer structure with a thickness of 200 μm.

(Comparative Example 5)

Put 497.5g of organic solvent E1 in a 10L plastic container, and add 3500g of inorganic filler C1 in it, and then use a stirring blade to disperse the inorganic filler C1 in the organic solvent. In this dispersion liquid, 296 g of thermosetting resin A1 and 464 g of hardener B2 were added, and the dispersion liquid was stirred. After visually confirming that the thermosetting resin A1 and the curing agent B2 are dissolved, 2.5 g of the curing catalyst D1 is added, and the dispersion is further stirred for 1 hour Time. The dispersion was filtered with nylon #200 mesh (mesh, pore diameter 75 μm) to obtain a filtrate as a varnish-like resin composition.

Using a coater and under the following conditions, the obtained varnish-like resin composition was coated on a film-like support (38μm thick polyethylene terephthalate), and the coating film was dried to A resin layer (100 μm in thickness) was formed on the support.

Coating head method: missing angle wheel type.

Coating and drying speed: 3m/min.

Drying conditions (temperature/furnace length): 90°C/3.3m, 110°C/3.3m, 120°C/3.3m.

The obtained two resin layers were bonded together using a vacuum laminator to obtain a sealing film having a sealing resin layer, which had a one-layer structure with a thickness of 200 μm.

The blending amount, thickness, drying rate, drying conditions, and curing shrinkage rate of the resin composition in each example are collectively shown in Table 1.

[Table 1]

[Evaluation Test]

(Hardening shrinkage)

The support body of the sealing film produced in each of the above-mentioned Examples and Comparative Examples was peeled off to obtain an evaluation sample for measuring the curing shrinkage rate. The curing shrinkage (%) is measured using a PVT tester (manufactured by Toyo Seiki Seisakusho Co., Ltd.) under the following conditions. The results are shown in Table 1 and Table 2.

Evaluation sample quality: 8g.

Heating conditions: the temperature was raised from 40°C to 140°C and maintained at 140°C for 2 hours, and then cooled to room temperature (23°C).

Pressure: 3MPa.

Cylinder diameter: 11.284 mm (area: 1.0 cm ² ).

(Warpage and chip embedding)

A SUS (stainless steel) plate with a diameter of 220 mm and a thickness of 1.5 mm was prepared as a support. Using a laminator, the temporary fixing film was attached to one side of the SUS plate. Use a cutting knife to cut off the temporary fixing film beyond the SUS plate.

Next, a silicon wafer of 7.3 mm×7.3 mm and a thickness of 150 μm was arranged in a grid on the above-mentioned temporary fixing film to obtain a substrate for evaluation. The number of silicon wafers mounted is 193, and the pitch of the silicon wafers is set to 9.6 mm in the vertical direction and the horizontal direction similarly. When configuring silicon chips, use die sorter (Canon For the CAP3500 (product model) manufactured by Machinery Co., Ltd., the load during configuration is set to 1kgf per silicon wafer.

The sealing resin layers of the sealing films produced in the examples and comparative examples were superimposed and bonded on the evaluation substrate made with the second resin layer facing the silicon wafer side, and in this state, used The vacuum laminator presses the sealing resin layer and the silicon wafer while heating, thereby embedding the silicon wafer in the sealing resin layer and thermally hardening the sealing resin layer to form a sealing part sealed with the silicon wafer. Remove the temporary fixing film from the obtained sealing molding, and with the silicon wafer side facing down, use a ruler to measure the direction of warpage of the sealing molding and the warpage from the bottom to the most warped part quantity. The warpage direction is "convex", which means that the seal portion side is warped in the convex direction.

Visually confirm the silicon wafer side surface of the sealed molded product after the temporary fixing film is removed, and judge the wafer embedding property based on whether the resin is filled between the silicon wafers. If there is no unfilled part, it is judged as "good". For Comparative Example 1, because of the embedding problem, the evaluation of warpage was not performed.

[table 3]

The evaluation results are shown in Table 2 and Table 3. According to the sealing film of the embodiment, the silicon wafer can be sealed with good embedding properties and the warpage of the sealed molded product can be sufficiently suppressed. In this embodiment, the curing shrinkage rate of the second resin layer is greater than that of the first resin layer. Hardening shrinkage rate.

1: The first resin layer

2: The second resin layer

2S: sealing surface

10: Sealing resin layer

Claims (8)

A sealing film for sealing electronic parts. The sealing film is provided with a sealing resin layer. The sealing resin layer has a first resin layer and a second resin layer. The first resin layer contains a first thermosetting resin and a first inorganic resin. A filler, the second resin layer containing a second thermosetting resin and a second inorganic filler; wherein the second resin layer has a sealing surface that faces the electronic component side when the electronic component is sealed, and The second resin layer and the first resin layer are sequentially laminated from the sealing surface side; the curing shrinkage rate of the second resin layer is greater than the curing shrinkage rate of the first resin layer. The sealing film according to claim 1, wherein the ratio of the curing shrinkage rate of the second resin layer to the curing shrinkage rate of the first resin layer exceeds 1 and is less than 10. The sealing film according to claim 1 or 2, wherein the first thermosetting resin and the second thermosetting resin are the same epoxy resin or different epoxy resins. A method of manufacturing an electronic component device, comprising: a step of embedding electronic components, which heats the sealing resin layer of the sealing film described in any one of claims 1 to 3 and the sealing resin layer The sealing surface is pressed against the arranged electronic components, thereby embedding the electronic components in the sealing resin layer; and, The step of forming the sealing portion includes curing the sealing resin layer to form a cured product of the sealing resin layer, that is, the sealing portion that seals the electronic component. The method of manufacturing an electronic component device according to claim 4, wherein the electronic component includes a semiconductor chip. An electronic component device comprising an electronic component and a sealing portion in which the electronic component is sealed, wherein the sealing portion is a cured product of a sealing resin layer of the sealing film according to any one of claims 1 to 3. The electronic component device according to claim 6, wherein the electronic component includes a semiconductor chip. The electronic component device according to claim 6, wherein the electronic component is surrounded by a cured product of the second resin layer in the sealing portion.

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