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TWI733060B - Wet treatment equipment and wet treatment method thereof - Google Patents

Wet treatment equipment and wet treatment method thereof Download PDF

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Publication number
TWI733060B
TWI733060B TW107135992A TW107135992A TWI733060B TW I733060 B TWI733060 B TW I733060B TW 107135992 A TW107135992 A TW 107135992A TW 107135992 A TW107135992 A TW 107135992A TW I733060 B TWI733060 B TW I733060B
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TW
Taiwan
Prior art keywords
wafers
water
zone
cleaning
jet
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Application number
TW107135992A
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Chinese (zh)
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TW202015125A (en
Inventor
易健民
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智優科技股份有限公司
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Priority to TW107135992A priority Critical patent/TWI733060B/en
Priority to CN201811345994.5A priority patent/CN111048436B/en
Publication of TW202015125A publication Critical patent/TW202015125A/en
Application granted granted Critical
Publication of TWI733060B publication Critical patent/TWI733060B/en

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    • H10P72/0404
    • H10P72/0414
    • H10P72/0426

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  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

一種濕式處理設備,適於對一承載治具所承載的多個晶片進行加工處理,濕式處理設備包含一輸送裝置、一蝕刻區、一第一清洗區、一去氧化區及一第二清洗區。輸送裝置可輸送承載治具移動。蝕刻區具有用以供輸送裝置所輸送的承載治具浸泡以蝕刻晶片的多個引腳的第一藥液。第一清洗區位於蝕刻區下游側用以清洗經由蝕刻區輸出的承載治具上的晶片。去氧化區位於第一清洗區下游側並具有用以供輸送裝置所輸送的承載治具浸泡以對各晶片的引腳產生去氧化反應的第二藥液。第二清洗區位於去氧化區下游側用以清洗經由去氧化區輸出的承載治具上的晶片。 A wet processing equipment is suitable for processing a plurality of wafers carried by a carrier jig. The wet processing equipment includes a conveying device, an etching zone, a first cleaning zone, a deoxidation zone and a second Cleaning area. The conveying device can convey the bearing jig to move. The etching zone is provided with a first chemical solution for immersing the carrier jig conveyed by the conveying device to etch a plurality of pins of the wafer. The first cleaning zone is located on the downstream side of the etching zone for cleaning the wafers on the carrier fixture output through the etching zone. The deoxidation zone is located on the downstream side of the first cleaning zone and is provided with a second chemical solution for immersing the carrier fixture conveyed by the conveying device to produce a deoxidation reaction on the leads of each wafer. The second cleaning zone is located on the downstream side of the deoxidation zone for cleaning the wafers on the carrier fixture output through the deoxidation zone.

Description

濕式處理設備及其濕式處理方法 Wet treatment equipment and wet treatment method thereof

本發明是有關於一種濕式處理設備,特別是指一種用以對封裝後的晶片進行濕式化學處理的濕式處理設備及其濕式處理方法。 The present invention relates to a wet processing equipment, in particular to a wet processing equipment and a wet processing method for wet chemical processing of encapsulated wafers.

現有透過四方平面無引腳封裝(QFN)方式封裝後的料片,需再透過切割機對料片進行鋸切以將其區分出多個晶片。切割機的鋸切刀在鋸切料片的絕緣封裝體過程中,因鋸切時所產生的高溫易造成各晶片側邊的金屬引腳產生部分熔融的狀態,使得鋸切刀在移動時很容易拉動前述熔融金屬移動而形成絲狀的金屬絲。 The existing blanks packaged by the QFN method need to be sawed by a dicing machine to separate them into multiple chips. During the process of sawing the insulating package of the material, the saw blade of the cutting machine can easily cause the metal pins on the side of each chip to be partially melted due to the high temperature generated during sawing, which makes the saw blade very difficult to move when moving. It is easy to pull the aforementioned molten metal to move to form a wire-like metal wire.

其中,當金屬絲直接連接在兩個相鄰的引腳之間時會造成晶片短路。當金屬絲由其中一引腳拉出但與另一相鄰的引腳相間隔時,或者是熔融金屬未被拉成金屬絲時,則不會造成晶片短路。雖然前述兩種情形不會立即造成晶片短路,但是,晶片在長時間熱脹冷縮的使用環境影響下,金屬絲或者是引腳會有遷移(migration)現象,易造成金屬絲與另一相鄰引腳接觸或者是兩個 相鄰的引腳相互接觸,進而導致晶片短路的情形產生。 Among them, when the metal wire is directly connected between two adjacent pins, it will cause a short circuit of the chip. When the metal wire is pulled out from one of the pins but is spaced from another adjacent pin, or when the molten metal is not drawn into a wire, the chip will not be short-circuited. Although the aforementioned two situations will not cause a short circuit of the chip immediately, under the influence of the long-term thermal expansion and contraction of the chip, the metal wire or pin will migrate (migration), which is easy to cause the metal wire to interact with another phase. Adjacent pin contact or two Adjacent pins are in contact with each other, which in turn causes a short circuit of the chip.

因此,本發明之其中一目的,即在提供一種能夠克服先前技術的至少一個缺點的濕式處理設備。 Therefore, one of the objectives of the present invention is to provide a wet processing equipment that can overcome at least one of the disadvantages of the prior art.

於是,本發明濕式處理設備,適於對一承載治具所承載的多個晶片進行加工處理,該濕式處理設備包含一輸送裝置、一蝕刻區、一第一清洗區、一去氧化區,及一第二清洗區。 Therefore, the wet processing equipment of the present invention is suitable for processing a plurality of wafers carried by a carrier jig. The wet processing equipment includes a conveying device, an etching zone, a first cleaning zone, and a deoxidation zone. , And a second cleaning zone.

輸送裝置可沿一第一輸送方向輸送該承載治具移動。蝕刻區具有用以供該輸送裝置所輸送的該承載治具浸泡以蝕刻各該晶片的多個引腳的第一藥液。第一清洗區位於該蝕刻區下游側用以清洗經由該蝕刻區輸出的該承載治具上的該等晶片。去氧化區位於該第一清洗區下游側,並具有用以供該輸送裝置所輸送的該承載治具浸泡以對各該晶片的該等引腳產生去氧化反應的第二藥液。第二清洗區位於該去氧化區下游側用以清洗經由該去氧化區輸出的該承載治具上的該等晶片。 The conveying device can convey the carrier jig to move along a first conveying direction. The etching area is provided with a first chemical solution for immersing the carrier jig conveyed by the conveying device to etch the pins of each of the wafers. The first cleaning zone is located on the downstream side of the etching zone for cleaning the wafers on the carrier fixture output through the etching zone. The deoxidation zone is located on the downstream side of the first cleaning zone, and has a second chemical solution for immersing the carrier jig conveyed by the conveying device to produce a deoxidation reaction on the pins of each chip. The second cleaning zone is located on the downstream side of the deoxidation zone for cleaning the wafers on the carrier fixture output through the deoxidation zone.

本發明之另一目的,即在提供一種能夠克服先前技術的至少一個缺點的濕式處理設備的濕式處理方法。 Another object of the present invention is to provide a wet processing method for wet processing equipment that can overcome at least one of the disadvantages of the prior art.

於是,本發明濕式處理設備的濕式處理方法,適於對一承載治具所承載的多個晶片進行加工處理,該濕式處理設備的濕 式處理方法包含下述步驟:透過一輸送裝置沿一第一輸送方向輸送該承載治具移動;透過一蝕刻區以第一藥液對沿著該第一輸送方向移動的各該晶片的多個引腳進行蝕刻;透過一第一清洗區對沿著該第一輸送方向由該蝕刻區輸出的該等晶片進行清洗;透過一去氧化區以第二藥液對沿著該第一輸送方向移動的各該晶片的該等引腳產生去氧化反應;及透過一第二清洗區對沿著該第一輸送方向由該去氧化區輸出的該等晶片進行清洗。 Therefore, the wet processing method of the wet processing equipment of the present invention is suitable for processing a plurality of wafers carried by a carrier jig, and the wet processing equipment of the wet processing equipment The processing method includes the following steps: transporting the carrier jig to move in a first transport direction through a transport device; and applying a first chemical solution to a plurality of wafers moving along the first transport direction through an etching zone The pins are etched; the wafers output from the etching zone along the first conveying direction are cleaned through a first cleaning zone; the second chemical solution pair is moved along the first conveying direction through a deoxidation zone The pins of each of the chips produce a deoxidation reaction; and the wafers output from the deoxidation zone along the first conveying direction are cleaned through a second cleaning zone.

本發明之功效在於:藉由蝕刻區的第一藥液與晶片的各引腳或者是與晶片因鋸切所產生的金屬絲產生化學反應並且蝕刻各引腳或金屬絲,使得兩個相鄰的引腳之間的距離能夠變大至預設的長度,或者是將金屬絲移除,以防止晶片在後續使用時因熱脹冷縮的因素造成金屬絲與另一相鄰引腳接觸或者是兩個相鄰的引腳相互接觸,進而導致短路的情形產生。 The effect of the present invention is that the first chemical solution in the etching zone reacts with each pin of the chip or the wire generated by the sawing of the chip and etches each pin or wire, so that two adjacent pins or wires are etched. The distance between the pins can be increased to a preset length, or the metal wire can be removed to prevent the chip from contacting another adjacent pin due to thermal expansion and contraction during subsequent use, or It is two adjacent pins that touch each other, which leads to a short circuit.

1:晶片 1: chip

11:絕緣封裝體 11: Insulation package

111:第一面 111: The first side

112:第二面 112: second side

113:側面 113: Side

12:引腳 12: Pin

13:金屬導熱層 13: Metal thermal conductive layer

14:金屬保護層 14: Metal protective layer

2:承載治具 2: Bearing fixture

21:承載盤 21: Carrier plate

211:盤體 211: Disc body

212:承載單元 212: Carrying Unit

213:凸塊單元 213: bump unit

214:墊塊單元 214: Spacer unit

215:通孔 215: Through hole

216:定位孔 216: positioning hole

217:凸伸臂 217: protruding arm

218:凸塊 218: bump

219:墊塊 219: Block

220:溝槽 220: groove

221:長面部 221: long face

222:短面部 222: short face

223:承載片 223: Carrier Sheet

23:蓋板 23: cover

230:第一開孔 230: first opening

231:板體 231: Board

232:定位柱 232: positioning column

233:開孔單元 233: Hole Unit

234:穿孔 234: Piercing

235:第二開孔 235: second opening

236:擋止框 236: Stop Frame

237:擋止端部 237: Stop End

24:側流道 24: Side runner

25:端流道 25: End runner

300:濕式處理設備 300: Wet processing equipment

3:機體 3: body

301:前端 301: front end

302:後端 302: backend

31:濕潤區 31: Humid zone

310:水 310: water

311:入料段 311: Feeding section

312:濕潤段 312: Wet section

313:吹乾段 313: Blow-dry section

314:噴灑件 314: spray parts

315:噴氣頭 315: Jet Head

316:側噴氣嘴 316: Side jet nozzle

32:蝕刻區 32: Etching area

321:分隔段 321: Separate section

322:化學反應段 322: Chemical Reaction Section

323:吹乾段 323: Dry section

324:第一藥液槽 324: The first liquid tank

325:第一藥液 325: The First Liquid

326:第一藥液噴頭 326: The first liquid spray nozzle

327:第一噴頭 327: The first nozzle

328:第一側噴嘴 328: Nozzle on the first side

33:第一清洗區 33: The first cleaning area

331:第一清洗段 331: First cleaning stage

332:第二清洗段 332: second cleaning stage

333:第三清洗段 333: The third cleaning stage

334:第四清洗段 334: The fourth cleaning stage

335:第一噴水頭 335: The first sprinkler

336:第一噴氣頭 336: First Jet Head

337:水 337: water

338:水槽 338: Sink

339:水 339: water

340:第二噴水頭 340: second sprinkler

341:第二噴氣頭 341: Second Jet Head

342:第一噴灑件 342: The first spray

343:第三噴氣頭 343: Third Jet Head

344:水 344: water

345:第二噴灑件 345: The second spray

346:第四噴氣頭 346: Fourth Jet Head

347:側噴氣嘴 347: Side Air Nozzle

348:水 348: Water

35:去氧化區 35: Deoxidation zone

351:分隔段 351: Separate paragraph

352:化學反應段 352: Chemical Reaction Section

353:吹乾段 353: Blow Dry Section

354:第二藥液槽 354: Second Liquid Tank

355:第二藥液 355: The Second Liquid

356:第二藥液噴頭 356: The second liquid spray nozzle

357:第二噴頭 357: second nozzle

358:第二側噴嘴 358: second side nozzle

36:第二清洗區 36: Second cleaning area

361:第一清洗段 361: The first cleaning stage

362:第二清洗段 362: second cleaning stage

363:第三清洗段 363: Third cleaning stage

364:第一噴水頭 364: The first sprinkler

365:第一噴氣頭 365: first jet head

366:水 366: water

367:水槽 367: Sink

368:水 368: water

369:第二噴水頭 369: second sprinkler

370:第二噴氣頭 370: Second Jet Head

371:噴灑件 371: spray parts

372:第三噴氣頭 372: The Third Jet Head

373:側噴氣嘴 373: Side Air Nozzle

374:水 374: water

38:檢查區 38: Inspection area

39:移除區 39: Remove area

391:分隔段 391: Separate segment

392:化學反應段 392: Chemical Reaction Section

393:吹乾段 393: Blow Dry Section

394:第三藥液槽 394: The Third Liquid Tank

395:第三藥液 395: The Third Liquid

396:第三藥液噴頭 396: The third liquid spray nozzle

397:第三噴頭 397: third nozzle

398:第三側噴嘴 398: third side nozzle

40:第三清洗區 40: Third cleaning area

401:第一清洗段 401: The first cleaning stage

402:第二清洗段 402: Second cleaning section

403:第一噴水頭 403: The first sprinkler

404:第一噴氣頭 404: First Jet Head

405:水 405: water

406:噴灑件 406: spray parts

407:第二噴氣頭 407: Second Jet Head

408:側噴氣嘴 408: Side Air Nozzle

409:水 409: water

41:中和區 41: Zhonghe District

411:分隔段 411: Separate paragraph

412:化學反應段 412: Chemical Reaction Section

413:吹乾段 413: Blow Dry Section

414:第四藥液槽 414: Fourth Liquid Tank

415:第四藥液 415: The Fourth Liquid

416:第四藥液噴頭 416: The fourth liquid spray nozzle

417:第四噴頭 417: fourth nozzle

418:第四側噴嘴 418: Fourth side nozzle

42:第四清洗區 42: The fourth cleaning area

421:第一清洗段 421: First cleaning stage

422:第二清洗段 422: second cleaning stage

423:第三清洗段 423: Third cleaning stage

424:第一噴水頭 424: The first sprinkler

425:第一噴氣頭 425: First Jet Head

426:水 426: water

427:水槽 427: Sink

428:水 428: water

429:第二噴水頭 429: second sprinkler

430:第二噴氣頭 430: Second Jet Head

431:噴灑件 431: spray parts

432:第三噴氣頭 432: Third Jet Head

433:側噴氣嘴 433: Side Air Nozzle

434:水 434: water

44:乾燥區 44: Dry zone

441:吹乾段 441: Blow Dry Section

442:烘乾段 442: Drying section

443:第一吹風件 443: First blow

444:第二吹風件 444: The second blow

45:回流區 45: Recirculation zone

5:輸送裝置 5: Conveying device

51:第一輸送機構 51: The first conveying mechanism

511:入料前端 511: Feeding front end

512:出料後端 512: Discharge back end

513:下輸送滾輪 513: Lower conveyor roller

514:上輸送滾輪 514: Upper conveyor roller

515:實心滾輪 515: solid roller

516:液切滾輪 516: Liquid Cut Roller

52:第二輸送機構 52: The second conveying mechanism

521:入料後端 521: Feeding back end

522:出料前端 522: Discharge front end

6:移載裝置 6: Transfer device

61:暫存機構 61: Temporary Storage Organization

611:第一輸送單元 611: The first conveying unit

612:升降單元 612: Lifting unit

613:第一輸送輪 613: The first conveyor wheel

614:導桿 614: guide rod

615:滑動架 615: Sliding Frame

616:承托桿 616: support rod

617:第一驅動總成 617: first drive assembly

62:橫移機構 62: Transverse mechanism

621:第二輸送單元 621: The second conveying unit

622:橫移單元 622: Transverse Unit

623:第二輸送輪 623: Second conveyor wheel

624:導軌 624: Rail

625:滑動件 625: Sliding Parts

626:第二驅動總成 626: second drive assembly

S1:輸送步驟 S1: Delivery step

S2:濕潤步驟 S2: Wetting step

S3:蝕刻步驟 S3: etching step

S4:第一清洗步驟 S4: The first cleaning step

S5:去氧化步驟 S5: Deoxidation step

S6:第二清洗步驟 S6: Second cleaning step

S7:移除步驟 S7: removal steps

S8:第三清洗步驟 S8: Third cleaning step

S9:中和步驟 S9: Neutralization step

S10:第四清洗步驟 S10: Fourth cleaning step

S11:乾燥步驟 S11: drying step

S12:移載步驟 S12: Transfer steps

S13:回流步驟 S13: Reflow step

D1:第一輸送方向 D1: The first conveying direction

D2:第二輸送方向 D2: Second conveying direction

D3:左噴氣方向 D3: Left jet direction

D4:右噴氣方向 D4: Right jet direction

X:前後方向 X: front and rear direction

Y:左右方向 Y: left and right direction

Z:上下方向 Z: Up and down direction

本發明之其他的特徵及功效,將於參照圖式的實施方式 中清楚地呈現,其中:圖1是本發明濕式處理設備的一實施例所欲加工處理的一晶片的一仰視圖;圖2是該晶片的一側視圖;圖3是用以承載該晶片的一承載治具的一承載盤的一俯視圖;圖4是該承載治具的一蓋板的一俯視圖;圖5是該承載治具的一不完整立體分解圖;圖6是該承載治具的一不完整俯視圖,說明該晶片組裝於該承載盤上;圖7是該承載治具的一不完整剖視圖,說明該晶片組裝於該承載治具內;圖8是該承載治具的一不完整的側視示意圖;圖9是該承載治具的一不完整的側視示意圖;圖10是該實施例的一俯視圖,說明一機體、一輸送裝置,及一移載裝置之間的配置關係;圖11是該實施例的一側視圖;圖12是該實施例的一濕潤區的一側視圖;圖13是該實施例的該濕潤區的一濕潤段的一側視示意圖;圖14是該實施例該濕潤區的一吹乾段的一側視示意圖; 圖15是該實施例的一蝕刻區的一側視圖;圖16是該實施例該蝕刻區的一化學反應段的一側視示意圖;圖17是該實施例該蝕刻區的一吹乾段的一側視示意圖;圖18是該實施例的一第一清洗區的一側視圖;圖19是該實施例該第一清洗區的一第四清洗段的一側視示意圖;圖20是該實施例的一去氧化區的一側視圖;圖21是該實施例該去氧化區的一吹乾段的一側視示意圖;圖22是該實施例的一第二清洗區的一側視圖;圖23是該實施例該第二清洗區的一第三清洗段的一側視示意圖;圖24是該實施例的一移除區的一側視圖;圖25是該實施例該移除區的一吹乾段的一側視示意圖;圖26是該實施例的一第三清洗區的一側視圖;圖27是該實施例該第三清洗區的一第二清洗段的一側視示意圖;圖28是該實施例的一中和區的一側視圖;圖29是該實施例該中和區的一吹乾段的一側視示意圖;圖30是該實施例的一第四清洗區的一側視圖;圖31是該實施例該第四清洗區的一第三清洗段的一側視示意 圖;圖32是該實施例的一乾燥區的一側視圖;圖33是該實施例的一移載裝置的一立體圖;圖34是該實施例的一移載裝置的一側視圖;圖35是該實施例的一不完整俯視圖;圖36是該實施例的濕式處理方法的一步驟流程圖;圖37是該實施例的一不完整俯視圖,說明一第二輸送單元在一第一位置;及圖38是該實施例的一不完整俯視圖,說明該第二輸送單元在一第二位置。 The other features and effects of the present invention will be described in the embodiment with reference to the drawings Figure 1 is a bottom view of a wafer to be processed by an embodiment of the wet processing equipment of the present invention; Figure 2 is a side view of the wafer; Figure 3 is used to carry the wafer Fig. 4 is a top view of a cover plate of the bearing jig; Fig. 5 is an incomplete three-dimensional exploded view of the bearing jig; Fig. 6 is the bearing jig Figure 7 is an incomplete cross-sectional view of the carrier jig, showing that the chip is assembled in the carrier jig; Figure 8 is an incomplete cross-sectional view of the carrier jig. Complete schematic side view; Figure 9 is an incomplete schematic side view of the carrier fixture; Figure 10 is a top view of the embodiment, illustrating the configuration relationship between a body, a conveying device, and a transfer device 11 is a side view of the embodiment; FIG. 12 is a side view of a wet area of the embodiment; FIG. 13 is a side view of a wet section of the wet area of the embodiment; FIG. 14 is A schematic side view of a drying section of the wet zone in this embodiment; 15 is a side view of an etching zone of this embodiment; FIG. 16 is a schematic side view of a chemical reaction section of the etching zone of this embodiment; FIG. 17 is a blow-drying section of the etching zone of this embodiment Fig. 18 is a side view of a first cleaning zone of this embodiment; Fig. 19 is a side view of a fourth cleaning section of the first cleaning zone of this embodiment; Fig. 20 is this embodiment Fig. 21 is a side view of a drying section of the deoxidation zone of this embodiment; Fig. 22 is a side view of a second cleaning zone of this embodiment; 23 is a schematic side view of a third cleaning section of the second cleaning zone of this embodiment; Figure 24 is a side view of a removal zone of this embodiment; Figure 25 is a side view of the removal zone of this embodiment Fig. 26 is a side view of a third cleaning zone in this embodiment; Fig. 27 is a side view of a second cleaning zone in the third cleaning zone in this embodiment; 28 is a side view of a neutralization zone of this embodiment; Figure 29 is a side view of a drying section of the neutralization zone of this embodiment; Figure 30 is a side view of a fourth cleaning zone of this embodiment Side view; Figure 31 is a schematic side view of a third cleaning section of the fourth cleaning zone of this embodiment Figure 32 is a side view of a drying zone of this embodiment; Figure 33 is a perspective view of a transfer device of this embodiment; Figure 34 is a side view of a transfer device of this embodiment; Figure 35 Is an incomplete top view of this embodiment; FIG. 36 is a step flow chart of the wet processing method of this embodiment; FIG. 37 is an incomplete top view of this embodiment, illustrating a second conveying unit in a first position And Figure 38 is an incomplete top view of this embodiment, illustrating the second conveying unit in a second position.

在本發明被詳細描述之前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。 Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same numbers.

參閱圖1及圖2,圖1是本發明濕式處理設備300的一實施例所欲加工處理的一晶片1的一仰視圖,圖2則是晶片1的一側視圖。晶片1是透過例如雙排式四方平面無引腳封裝方式(Dual Row Quad Flat No lead,DR-QFN)方式、四方平面無引腳封裝(QFN)方式或雙邊無引腳封裝(DFN)方式封裝而成。晶片1是以矩形為例,當然其也可以是方形。晶片1包括一絕緣封裝體11、多個引腳 12、一金屬導熱層13,及一金屬保護層14。絕緣封裝體11具有一第一面111、一相反於第一面111的第二面112,及四個連接於第一面111與第二面112之間的側面113。各引腳12是由銅所製成且被絕緣封裝體11包覆住一部份。該等引腳12的其中一部分在兩個短邊側的側面113處排列成雙排,其中一排引腳12是裸露於絕緣封裝體11的第一面111,而另一排引腳12則是同時裸露於絕緣封裝體11的第一面111及側面113。該等引腳12的其餘部分在兩個長邊側的側面113處排列成單排,且同時裸露於絕緣封裝體11的第一面111及側面113。金屬導熱層13是由例如錫所製成且被絕緣封裝體11包覆住一部份,金屬導熱層13可裸露於絕緣封裝體11的第一面111。金屬保護層14是由例如銀所製成且鍍於金屬導熱層13上,以遮蔽住金屬導熱層13。 1 and FIG. 2, FIG. 1 is a bottom view of a wafer 1 to be processed by an embodiment of the wet processing equipment 300 of the present invention, and FIG. 2 is a side view of the wafer 1. Chip 1 is packaged by, for example, a dual row quad flat no lead (DR-QFN) method, a quad flat no lead (QFN) method, or a dual no lead (DFN) method. Become. The wafer 1 is a rectangle as an example, of course, it can also be a square. The chip 1 includes an insulating package body 11 and a plurality of pins 12. A metal thermally conductive layer 13 and a metal protective layer 14. The insulating package 11 has a first surface 111, a second surface 112 opposite to the first surface 111, and four side surfaces 113 connected between the first surface 111 and the second surface 112. Each pin 12 is made of copper and partly covered by an insulating package 11. Some of the pins 12 are arranged in a double row at the side surfaces 113 on the two short sides. One row of pins 12 is exposed on the first side 111 of the insulating package 11, and the other row of pins 12 is It is exposed on the first surface 111 and the side surface 113 of the insulating package 11 at the same time. The remaining parts of the pins 12 are arranged in a single row at the side surfaces 113 of the two long sides, and are exposed on the first surface 111 and the side surface 113 of the insulating package 11 at the same time. The thermal conductive metal layer 13 is made of, for example, tin and partially covered by the insulating package 11. The thermal conductive metal layer 13 can be exposed on the first surface 111 of the insulating package 11. The metal protection layer 14 is made of, for example, silver and is plated on the metal heat-conducting layer 13 to shield the metal heat-conducting layer 13.

參閱圖3、圖4及圖5,一承載治具2用以同時承載多個如圖1所示的晶片1,承載治具2包含一承載盤21,及一可拆卸地蓋合於承載盤21的蓋板23。承載盤21包括一呈矩形的盤體211、多個承載單元212、多個凸塊單元213,及四個墊塊單元214。盤體211形成有多個呈陣列排列的通孔215,及三個定位孔216。各定位孔216鄰近於盤體211的對應角隅處。各承載單元212形成於盤體211界定出各通孔215的一內周面210,並包含四個凸伸臂217,及四個承載片223。各凸伸臂217凸設於內周面210的對應角隅處。各承載 片223連接於對應的兩個相鄰的凸伸臂217之間,用以承載晶片1的第一面111(如圖2)或第二面112(如圖2)。在本實施例中是以各承載片223承載第一面111作說明。各凸塊單元213包含四個凸設於盤體211頂面的凸塊218,該等凸塊218鄰近於內周面210的四個角隅處。各墊塊單元214包含多個凸設於盤體211頂面且位於盤體211的對應角隅處的墊塊219,該等墊塊219界定出多個相互垂直交錯連通的溝槽220。盤體211頂面具有兩個長面部221,及兩個短面部222。兩長面部221分別位於盤體211的兩長邊,而兩短面部222分別位於盤體211的兩短邊。各長面部221位於對應的兩個墊塊單元214之間,而各短面部222則位於對應的兩個墊塊單元214之間。 Referring to Figures 3, 4 and 5, a carrier jig 2 is used to simultaneously carry multiple chips 1 as shown in Fig. 1. The carrier jig 2 includes a carrier plate 21 and a detachable cover on the carrier plate 21的盖板23。 21 of the cover 23. The carrier plate 21 includes a rectangular plate body 211, a plurality of carrier units 212, a plurality of bump units 213, and four spacer units 214. The disk body 211 is formed with a plurality of through holes 215 arranged in an array and three positioning holes 216. Each positioning hole 216 is adjacent to the corresponding corner of the plate body 211. Each supporting unit 212 is formed on an inner peripheral surface 210 of the plate body 211 defining each through hole 215 and includes four protruding arms 217 and four supporting sheets 223. Each protruding arm 217 protrudes from the corresponding corner of the inner peripheral surface 210. Each bearer The sheet 223 is connected between the corresponding two adjacent protruding arms 217 to carry the first surface 111 (as shown in FIG. 2) or the second surface 112 (as shown in FIG. 2) of the wafer 1. In this embodiment, the first surface 111 is carried by each supporting sheet 223 for illustration. Each bump unit 213 includes four bumps 218 protruding on the top surface of the disk body 211, and the bumps 218 are adjacent to the four corners of the inner peripheral surface 210. Each cushion block unit 214 includes a plurality of cushion blocks 219 protrudingly disposed on the top surface of the plate body 211 and located at the corresponding corners of the plate body 211. The cushion blocks 219 define a plurality of grooves 220 that are mutually perpendicular and interlaced and communicated with each other. The top surface of the plate body 211 has two long face parts 221 and two short face parts 222. The two long face parts 221 are respectively located on the two long sides of the plate body 211, and the two short face parts 222 are respectively located on the two short sides of the plate body 211. Each long face 221 is located between the two corresponding cushion units 214, and each short face 222 is located between the corresponding two cushion units 214.

蓋板23包括一呈矩形的板體231,及三個定位柱232。板體231形成有多個呈陣列排列的開孔單元233,及多個穿孔234。各開孔單元233包括一第一開孔230,四個圍繞在第一開孔230外周圍的第二開孔235。該等穿孔234鄰近於板體231的兩長邊及兩短邊並且圍繞在該等開孔單元233外周圍。板體231具有多個擋止框236,各擋止框236呈框形且界定出第一開孔230。各擋止框236用以擋止晶片1的第二面112。各定位柱232凸設於板體231底面且鄰近板體231的對應角隅處,用以卡掣於對應的定位孔216內。 The cover 23 includes a rectangular plate 231 and three positioning posts 232. The board 231 is formed with a plurality of perforated units 233 arranged in an array and a plurality of perforations 234. Each opening unit 233 includes a first opening 230 and four second openings 235 surrounding the first opening 230. The perforations 234 are adjacent to the two long sides and two short sides of the plate body 231 and surround the periphery of the opening units 233. The board 231 has a plurality of stop frames 236, and each stop frame 236 has a frame shape and defines a first opening 230. Each stop frame 236 is used to stop the second surface 112 of the chip 1. Each positioning post 232 is protrudingly provided on the bottom surface of the board 231 and adjacent to the corresponding corner of the board 231 to be latched in the corresponding positioning hole 216.

參閱圖6及圖7,將各晶片1放置於對應的承載單元212後,承載單元212的四個承載片223會抵接於晶片1的第一面111以 承載晶片1。隨後,將蓋板23蓋合於承載盤21,使各定位柱232(如圖4)卡掣於對應的定位孔216(如圖3)內,以及各凸塊218頂面及各墊塊219(如圖3)頂面抵接於板體231底面,即完成蓋板23的組裝。此時,晶片1的第一面111大部分區域,以及裸露於第一面111的所有引腳12與金屬保護層14皆會與承載盤21的通孔215對應,藉此,使得處理液、清潔液或壓縮空氣等流體能通過通孔215流入承載治具2內的晶片1處,以對晶片1進行化學反應、清洗或吹乾等動作。晶片1的第二面112大部分區域會與蓋板23的對應開孔單元233的第一開孔230及四個第二開孔235位置對應,藉此,使得處理液、清潔液或壓縮空氣等流體能通過第一開孔230及第二開孔235流入承載治具2內的晶片1處,以對晶片1進行化學反應、清洗或吹乾等動作。 6 and 7, after each chip 1 is placed on the corresponding carrier unit 212, the four carrier sheets 223 of the carrier unit 212 will abut against the first surface 111 of the chip 1 Carrying wafer 1. Subsequently, the cover plate 23 is covered on the carrier plate 21, so that the positioning posts 232 (as shown in FIG. 4) are locked in the corresponding positioning holes 216 (as shown in FIG. 3), and the top surfaces of the bumps 218 and the cushion blocks 219 (Figure 3) The top surface abuts against the bottom surface of the plate body 231, and the assembly of the cover plate 23 is completed. At this time, most of the area of the first surface 111 of the wafer 1, and all the pins 12 and the metal protection layer 14 exposed on the first surface 111 will correspond to the through holes 215 of the carrier plate 21, thereby making the processing liquid, Fluids such as cleaning fluid or compressed air can flow into the wafer 1 in the carrier fixture 2 through the through hole 215 to perform chemical reactions, cleaning, or drying operations on the wafer 1. Most areas of the second surface 112 of the wafer 1 will correspond to the positions of the first opening 230 and the four second openings 235 of the corresponding opening unit 233 of the cover 23, thereby making the processing liquid, cleaning liquid or compressed air The fluid can flow into the wafer 1 in the carrier fixture 2 through the first opening 230 and the second opening 235 to perform chemical reactions, cleaning, or drying operations on the wafer 1.

晶片1的第二面112會與蓋板23的擋止框236底面的一擋止端部237相間隔一段距離,藉此,能容許晶片1受到前述流體沖擊時在承載片223與擋止框236的擋止端部237之間上下晃動。此外,晶片1的各側面113會與對應的凸塊218相間隔一段距離,藉此,能容許晶片1受到前述流體沖擊時在該等凸塊218之間前後晃動或左右晃動。 The second surface 112 of the chip 1 is spaced a distance from a stop end 237 of the bottom surface of the stop frame 236 of the cover 23, thereby allowing the wafer 1 to be impacted by the aforementioned fluid between the carrier sheet 223 and the stop frame. The blocking ends 237 of 236 swing up and down. In addition, each side surface 113 of the chip 1 is spaced from the corresponding bumps 218 by a certain distance, thereby allowing the chip 1 to swing back and forth between the bumps 218 or from side to side when the chip 1 is impacted by the aforementioned fluid.

參閱圖8,承載盤21的各長面部221及對應的兩個墊塊單元214,以及蓋板23的板體231底面之間共同界定出一側流道 24。參閱圖9,承載盤21的各短面部222及對應的兩個墊塊單元214,以及蓋板23的板體231底面之間共同界定出一端流道25。 Referring to FIG. 8, each long surface portion 221 of the carrier plate 21 and the corresponding two block units 214, and the bottom surface of the plate body 231 of the cover 23 jointly define a side flow channel. twenty four. Referring to FIG. 9, each short surface portion 222 of the carrier plate 21 and the corresponding two block units 214, and the bottom surface of the plate body 231 of the cover 23 jointly define an end flow channel 25.

參閱圖3、圖4、圖8及圖9,藉由各墊塊單元214以多個墊塊219抵接於板體231底面的方式,能降低與板體231底面的接觸面積,使處理液或清潔液較不易黏在各墊塊219頂面與板體231底面之間。藉由溝槽220能容許流體於其內流動的設計,使得壓縮空氣吹向承載治具2左右兩側的溝槽220時,能將溝槽220內的處理液或清潔液吹出使其能經由端流道25或通孔215排出。同時,壓縮空氣於溝槽220內流動的過程中也能提升將各墊塊219頂面與板體231底面之間的殘留處理液或清潔液吹走的效果。此外,壓縮空氣吹向承載治具2左右兩側的側流道24時,能將長面部221上的殘留處理液或清潔液吹走使其經由通孔215排出。並且,壓縮空氣能吹向各晶片1並對其吹乾。 Referring to FIGS. 3, 4, 8 and 9, by each cushion block unit 214 with a plurality of cushion blocks 219 abutting against the bottom surface of the plate body 231, the contact area with the bottom surface of the plate body 231 can be reduced, so that the treatment liquid Or, the cleaning liquid is less likely to stick between the top surface of each block 219 and the bottom surface of the board 231. The groove 220 is designed to allow fluid to flow in it, so that when compressed air is blown to the grooves 220 on the left and right sides of the bearing fixture 2, the processing liquid or cleaning liquid in the grooves 220 can be blown out so that they can pass through The end runner 25 or the through hole 215 discharges. At the same time, the compressed air flowing in the groove 220 can also improve the effect of blowing away the residual processing liquid or cleaning liquid between the top surface of each cushion block 219 and the bottom surface of the board 231. In addition, when the compressed air is blown to the side flow passages 24 on the left and right sides of the supporting jig 2, the remaining processing liquid or cleaning liquid on the long surface portion 221 can be blown away and discharged through the through hole 215. In addition, compressed air can be blown to each wafer 1 and dried.

藉由蓋板23的該等穿孔234對應於承載盤21的各墊塊單元214、各長面部221及各短面部222上方的設計方式,使得壓縮空氣由蓋板23上方吹向該等穿孔234時,壓縮空氣能通過該等穿孔234吹向各墊塊單元214、各長面部221及各短面部222,能將前述結構上所殘留的處理液或清潔液吹走使其經由溝槽220、側流道24及端流道25排出。 The perforations 234 of the cover plate 23 correspond to the design of each block unit 214, each long face part 221 and each short face part 222 of the carrier tray 21, so that compressed air is blown from above the cover plate 23 to the perforation holes 234 At this time, the compressed air can be blown to each block unit 214, each long face part 221, and each short face part 222 through the perforations 234, and can blow away the treatment liquid or cleaning liquid remaining on the aforementioned structure through the groove 220, The side runner 24 and the end runner 25 are discharged.

參閱圖10及圖11,是本發明濕式處理設備300的一實 施例,適於對承載治具2所承載的多個晶片1(如圖7)進行加工處理。濕式處理設備300包含一機體3、一輸送裝置5,及一移載裝置6。 10 and 11, is an example of the wet processing equipment 300 of the present invention The embodiment is suitable for processing a plurality of wafers 1 (as shown in FIG. 7) carried by the carrying jig 2. The wet processing equipment 300 includes a body 3, a conveying device 5, and a transfer device 6.

機體3包括一前端301,及一後端302。定義通過機體3的前端301與後端302的方向為一前後方向X、一垂直於前後方向X的左右方向Y,及一垂直於前後方向X與左右方向Y的上下方向Z。 The body 3 includes a front end 301 and a rear end 302. The directions passing through the front end 301 and the rear end 302 of the body 3 are defined as a front-rear direction X, a left-right direction Y perpendicular to the front-rear direction X, and an up-down direction Z perpendicular to the front-rear direction X and the left-right direction Y.

機體3包括一濕潤區31、一蝕刻區32、一第一清洗區33、一去氧化區35、一第二清洗區36、一檢查區38、一移除區39、一第三清洗區40、一中和區41、一第四清洗區42、一乾燥區44,及一回流區45。前述濕潤區31、蝕刻區32、第一清洗區33、去氧化區35、第二清洗區36、檢查區38、移除區39、第三清洗區40、中和區41、第四清洗區42及乾燥區44是沿著前後方向X由前朝後依序排列成一列。而回流區45則是沿著前後方向X延伸成另一列且沿左右方向Y排列於前述列的右側。回流區45與濕潤區31共同界定出前端301,回流區45則與乾燥區44共同界定出後端302。 The body 3 includes a wet zone 31, an etching zone 32, a first cleaning zone 33, a deoxidation zone 35, a second cleaning zone 36, an inspection zone 38, a removal zone 39, and a third cleaning zone 40 , A neutralization zone 41, a fourth cleaning zone 42, a drying zone 44, and a recirculation zone 45. The aforementioned wet zone 31, etching zone 32, first cleaning zone 33, deoxidation zone 35, second cleaning zone 36, inspection zone 38, removal zone 39, third cleaning zone 40, neutralization zone 41, and fourth cleaning zone 42 and the drying zone 44 are arranged in a row from front to back along the front-rear direction X. The recirculation zone 45 extends in another row along the front-rear direction X and is arranged on the right side of the aforementioned row along the left-right direction Y. The recirculation zone 45 and the wet zone 31 jointly define a front end 301, and the recirculation zone 45 and the drying zone 44 jointly define a rear end 302.

輸送裝置5包括一第一輸送機構51,及一沿左右方向Y與第一輸送機構51相間隔的第二輸送機構52。第一輸送機構51設置於前述濕潤區31、蝕刻區32、第一清洗區33、去氧化區35、第二清洗區36、檢查區38、移除區39、第三清洗區40、中和區41、第四清洗區42及乾燥區44。第一輸送機構51具有一位於濕潤區31 且鄰近前端301的入料前端511,及一位於乾燥區44且鄰近後端302的出料後端512。第一輸送機構51可沿一由前朝後的第一輸送方向D1輸送承載治具2於前述各區內移動。第二輸送機構52設置於回流區45內並具有一鄰近後端302的入料後端521,及一鄰近前端301的出料前端522。第二輸送機構52可沿一相反於第一輸送方向D1的第二輸送方向D2輸送承載治具2於回流區45內移動。 The conveying device 5 includes a first conveying mechanism 51 and a second conveying mechanism 52 spaced apart from the first conveying mechanism 51 in the left-right direction Y. The first conveying mechanism 51 is arranged in the aforementioned wetting zone 31, etching zone 32, first cleaning zone 33, deoxidation zone 35, second cleaning zone 36, inspection zone 38, removal zone 39, third cleaning zone 40, and neutralization zone. Zone 41, the fourth cleaning zone 42, and the drying zone 44. The first conveying mechanism 51 has a wetted area 31 And a front end 511 of the feed material adjacent to the front end 301, and a rear end 512 of the discharge material located in the drying zone 44 and adjacent to the back end 302. The first conveying mechanism 51 can move the carrier jig 2 in the aforementioned areas along a first conveying direction D1 from front to back. The second conveying mechanism 52 is disposed in the recirculation zone 45 and has a feeding rear end 521 adjacent to the rear end 302 and a discharging front end 522 adjacent to the front end 301. The second conveying mechanism 52 can convey the supporting jig 2 in the return zone 45 along a second conveying direction D2 opposite to the first conveying direction D1.

參閱圖12及圖13,濕潤區31包括一入料段311、一位於入料段311下游側的濕潤段312,及一位於濕潤段312下游側的吹乾段313。濕潤段312包含多對沿第一輸送方向D1相間隔排列的噴灑件314。每一對的兩個噴灑件314沿上下方向Z相間隔,其中,下方噴灑件314用以朝上噴水310,而上方噴灑件314則用以朝下噴水310。藉此,使得前述噴灑件314能對第一輸送機構51所輸送的承載治具2上的晶片1(如圖7)噴灑水310以進行濕潤作業。 Referring to FIGS. 12 and 13, the wetting zone 31 includes a feed section 311, a wetting section 312 located on the downstream side of the feed section 311, and a drying section 313 located on the downstream side of the wet section 312. The wetting section 312 includes a plurality of pairs of spraying elements 314 arranged at intervals along the first conveying direction D1. The two spraying elements 314 of each pair are spaced along the up-down direction Z. The lower spraying element 314 is used for spraying water 310 upward, and the upper spraying element 314 is used for spraying water 310 downward. Thereby, the aforementioned spraying member 314 can spray water 310 on the wafer 1 (as shown in FIG. 7) on the carrier jig 2 conveyed by the first conveying mechanism 51 to perform the wetting operation.

第一輸送機構51包含多個沿前後方向X相間隔排列的下輸送滾輪513,及多個沿前後方向X相間隔排列的上輸送滾輪514。該等下輸送滾輪513及該等上輸送滾輪514皆位於入料前端511及出料後端512(如圖10)之間,各下輸送滾輪513為一主動滾輪,而各上輸送滾輪514為一從動滾輪。上輸送滾輪514的數量少於下輸送滾輪513的數量,且各上輸送滾輪514位在對應下輸送滾輪513上方。第一輸送機構51透過下輸送滾輪513及上輸送滾輪 514帶動承載治具2沿第一輸送方向D1移動。 The first conveying mechanism 51 includes a plurality of lower conveying rollers 513 arranged at intervals in the front-rear direction X, and a plurality of upper conveying rollers 514 arranged at intervals in the front-rear direction X. The lower conveying rollers 513 and the upper conveying rollers 514 are located between the feeding front end 511 and the discharging rear end 512 (Figure 10). Each lower conveying roller 513 is an active roller, and each upper conveying roller 514 is A driven roller. The number of upper conveying rollers 514 is less than the number of lower conveying rollers 513, and each upper conveying roller 514 is positioned above the corresponding lower conveying roller 513. The first conveying mechanism 51 passes through the lower conveying roller 513 and the upper conveying roller 514 drives the carrier jig 2 to move along the first conveying direction D1.

參閱圖12及圖14,吹乾段313包含位於噴灑件314下游側的兩對噴氣頭315,及兩個側噴氣嘴316(如圖14)。兩對噴氣頭315沿第一輸送方向D1相間隔排列,每一對的兩個噴氣頭315沿上下方向Z相間隔,各噴氣頭315用以噴出風刀(air knife)形式的壓縮氣體。其中,下方噴氣頭315呈傾斜地朝上並朝前噴氣,上方噴氣頭315則是呈傾斜地朝下並朝前噴氣。藉此,使得前述噴氣頭315能對第一輸送機構51所輸送的承載治具2上的晶片1(如圖7)噴氣以移除晶片1上的水310。兩個側噴氣嘴316沿左右方向Y相間隔,其中之一是沿著一左噴氣方向D3對第一輸送機構51所輸送的承載治具2上的晶片1側向噴氣,而其中另一是沿著一相反於左噴氣方向D3的右噴氣方向D4對承載治具2上的晶片1側向噴氣,藉此,以移除晶片1上的水310。 12 and 14, the drying section 313 includes two pairs of air nozzles 315 located on the downstream side of the spray member 314, and two side air nozzles 316 (as shown in FIG. 14). The two pairs of air jets 315 are spaced apart along the first conveying direction D1, and the two air jets 315 of each pair are spaced apart along the up and down direction Z, and each jet head 315 is used to eject compressed air in the form of an air knife. Among them, the lower jet nozzle 315 is inclined upward and forward jets, and the upper jet nozzle 315 is inclined downward and forward jets. Thereby, the aforementioned air jet head 315 can jet the wafer 1 (as shown in FIG. 7) on the carrier jig 2 conveyed by the first conveying mechanism 51 to remove the water 310 on the wafer 1. The two side air nozzles 316 are spaced apart in the left and right direction Y, one of which is to inject the wafer 1 on the carrier fixture 2 conveyed by the first conveying mechanism 51 laterally along a left air blowing direction D3, and the other is The wafer 1 on the carrier fixture 2 is jetted laterally along a right jet direction D4 opposite to the left jet direction D3, thereby removing the water 310 on the wafer 1.

參閱圖15及圖16,蝕刻區32包括一分隔段321、一位於分隔段321下游側的化學反應段322,及一位於化學反應段322下游側的吹乾段323。分隔段321位於濕潤區31的吹乾段313(如圖12)下游側,用以分隔吹乾段313與化學反應段322,以避免化學反應段322內的化學藥液滲流入吹乾段313內。化學反應段322形成一用以供第一輸送機構51所輸送的承載治具2穿過的第一藥液槽324,第一藥液槽324容置有用以供承載治具2浸泡的第一藥液 325。在本實施例中,第一藥液325為用以蝕刻各晶片1的引腳12(如圖1)的蝕刻液。化學反應段322包含多個設置於第一藥液槽324內並沿第一輸送方向D1相間隔且上下交錯排列的第一藥液噴頭326。該等第一藥液噴頭326中的一部分朝上對承載治具2上的晶片1噴出水刀形式的第一藥液325,而另一部分則是朝下對晶片1噴出水刀形式的第一藥液325。第一輸送機構51還包括兩個實心滾輪515,及兩個液切滾輪516。兩實心滾輪515分別位於第一藥液槽324前後兩端。兩液切滾輪516分別抵接於兩實心滾輪515,用以阻擋第一藥液325以防其大量溢流入分隔段321及吹乾段323。各液切滾輪516被承載治具2頂撐的部分能向上位移,以容許承載治具2通過實心滾輪515與液切滾輪516之間。 Referring to FIGS. 15 and 16, the etching zone 32 includes a partition section 321, a chemical reaction section 322 located on the downstream side of the partition section 321, and a drying section 323 located on the downstream side of the chemical reaction section 322. The dividing section 321 is located on the downstream side of the drying section 313 (as shown in FIG. 12) of the wet zone 31, and is used to separate the drying section 313 and the chemical reaction section 322 to prevent the chemical liquid in the chemical reaction section 322 from infiltrating into the drying section 313 Inside. The chemical reaction section 322 forms a first medicinal solution tank 324 for the carrier jig 2 conveyed by the first conveying mechanism 51 to pass through. The first medicinal liquid trough 324 contains the first medicinal solution tank 324 for immersing the carrier jig 2 Liquid medicine 325. In this embodiment, the first chemical solution 325 is an etching solution used to etch the pins 12 of each wafer 1 (as shown in FIG. 1). The chemical reaction section 322 includes a plurality of first chemical liquid spray nozzles 326 arranged in the first chemical liquid tank 324 and spaced apart along the first conveying direction D1 and staggered up and down. One part of the first chemical liquid spraying heads 326 sprays the first chemical liquid 325 in the form of a water jet toward the wafer 1 on the carrier jig 2, while the other part sprays the first chemical liquid 325 in the form of a water jet toward the wafer 1 downward.药液325. The first conveying mechanism 51 also includes two solid rollers 515 and two liquid cutting rollers 516. The two solid rollers 515 are respectively located at the front and rear ends of the first liquid tank 324. The two liquid cutting rollers 516 respectively abut against the two solid rollers 515 to block the first liquid medicine 325 to prevent a large amount of it from overflowing into the partition section 321 and the drying section 323. The part supported by the supporting jig 2 of each liquid cutting roller 516 can move upward to allow the supporting jig 2 to pass between the solid roller 515 and the liquid cutting roller 516.

參閱圖15及圖17,吹乾段323包含位於第一藥液槽324下游側的兩對第一噴頭327及兩個第一側噴嘴328。兩對第一噴頭327沿第一輸送方向D1相間隔排列,每一對的兩個第一噴頭327沿上下方向Z相間隔。各第一噴頭327的結構及設置方式與噴氣頭315(如圖12)的結構及設置方式相同,下方第一噴頭327呈傾斜地朝上並朝前噴氣,上方第一噴頭327則是呈傾斜地朝下並朝前噴氣。藉此,使得前述第一噴頭327能對第一輸送機構51所輸送的承載治具2上的晶片1(如圖7)噴氣以移除晶片1上的第一藥液325。各第一側噴嘴328的結構及設置方式與側噴氣嘴316(如圖14)的結構 及設置方式相同。兩個第一側噴嘴328沿左右方向Y相間隔,兩個第一側噴嘴328其中之一是沿著左噴氣方向D3對第一輸送機構51所輸送的承載治具2上的晶片1側向噴氣,而其中另一是沿著右噴氣方向D4對承載治具2上的晶片1側向噴氣,藉此,以移除晶片1上的第一藥液325。 Referring to FIGS. 15 and 17, the drying section 323 includes two pairs of first spray heads 327 and two first side nozzles 328 located on the downstream side of the first liquid tank 324. The two pairs of first nozzles 327 are spaced apart along the first conveying direction D1, and the two first nozzles 327 of each pair are spaced apart along the vertical direction Z. The structure and arrangement of each first nozzle 327 are the same as those of the air jet 315 (Figure 12). The lower first nozzle 327 is tilted upward and jets forward, and the upper first nozzle 327 is tilted toward the front. Jet down and forward. Thereby, the aforementioned first spray head 327 can spray the wafer 1 (as shown in FIG. 7) on the carrier fixture 2 conveyed by the first conveying mechanism 51 to remove the first chemical liquid 325 on the wafer 1. The structure and arrangement of each first side nozzle 328 and the structure of the side air nozzle 316 (Figure 14) And the setting method is the same. The two first-side nozzles 328 are spaced apart in the left-right direction Y, and one of the two first-side nozzles 328 is laterally to the wafer 1 on the carrier jig 2 conveyed by the first conveying mechanism 51 along the left air jet direction D3 Air jet, and the other is to jet the wafer 1 on the carrier fixture 2 sidewardly along the right air jet direction D4, thereby removing the first chemical solution 325 on the wafer 1.

參閱圖18,第一清洗區33包括一位於吹乾段323(如圖15)下游側的第一清洗段331、一位於第一清洗段331下游側的第二清洗段332、一位於第二清洗段332下游側的第三清洗段333,及一位於第三清洗段333下游側的第四清洗段334。第一清洗段331包含兩個沿上下方向Z相間隔的第一噴水頭335,及兩個沿上下方向Z相間隔且位於第一噴水頭335下游側的第一噴氣頭336。各第一噴水頭335的結構與第一藥液噴頭326(如圖15)的結構相同。兩個第一噴水頭335其中之一朝上對承載治具2上的晶片1噴出水刀形式的水337,而其中另一則是朝下對晶片1噴出水刀形式的水337,藉此,以對晶片1進行第一道清洗。各第一噴氣頭336的結構及設置方式與噴氣頭315(如圖12)的結構及設置方式相同,下方第一噴氣頭336呈傾斜地朝上並朝前噴氣,上方第一噴氣頭336則是呈傾斜地朝下並朝前噴氣。藉此,使得前述第一噴氣頭336能對第一輸送機構51所輸送的承載治具2上的晶片1噴氣以移除晶片1上的水337。 Referring to Figure 18, the first cleaning zone 33 includes a first cleaning section 331 located on the downstream side of the drying section 323 (Figure 15), a second cleaning section 332 located on the downstream side of the first cleaning section 331, and a second cleaning section 332 located on the downstream side of the first cleaning section 331. A third cleaning section 333 on the downstream side of the cleaning section 332, and a fourth cleaning section 334 on the downstream side of the third cleaning section 333. The first cleaning section 331 includes two first water jet heads 335 spaced apart along the up-down direction Z, and two first jet heads 336 spaced apart along the up-down direction Z and located on the downstream side of the first water jet head 335. The structure of each first water spray head 335 is the same as that of the first chemical liquid spray head 326 (as shown in FIG. 15). One of the two first water spray heads 335 sprays water 337 in the form of a water jet toward the wafer 1 on the carrier jig 2 upwards, and the other sprays water 337 in the form of a water jet toward the wafer 1 downwards. To perform the first cleaning on the wafer 1. The structure and arrangement of each first jet head 336 are the same as those of jet head 315 (as shown in Figure 12). The lower first jet head 336 is inclined upward and forward jets, while the upper first jet head 336 is Air jet downward and forward at an oblique angle. Thereby, the aforementioned first air jet head 336 can air jet the wafer 1 on the carrier jig 2 conveyed by the first conveying mechanism 51 to remove the water 337 on the wafer 1.

第二清洗段332形成有一用以供第一輸送機構51所輸送的承載治具2穿過的水槽338,水槽338內容置有用以供承載治具2浸泡用以清洗晶片1的水339。水槽338前後兩端同樣配置有兩個實心滾輪515,及兩個液切滾輪516。第二清洗段332包含多個設置於水槽338內並沿第一輸送方向D1相間隔且上下交錯排列的第二噴水頭340,及兩個沿上下方向Z相間隔且位於水槽338下游側的第二噴氣頭341。該等第二噴水頭340中的一部分朝上對承載治具2上的晶片1噴出水刀形式的水339,而另一部分則是朝下對晶片1噴出水刀形式的水339,藉此,以對晶片1進行第二道清洗。各第二噴氣頭341的結構及設置方式與噴氣頭315(如圖12)的結構及設置方式相同,下方第二噴氣頭341呈傾斜地朝上並朝前噴氣,上方第二噴氣頭341則是呈傾斜地朝下並朝前噴氣。藉此,使得前述第二噴氣頭341能對第一輸送機構51所輸送的承載治具2上的晶片1噴氣以移除晶片1上的水339。 The second cleaning section 332 is formed with a water tank 338 for the carrier jig 2 conveyed by the first conveying mechanism 51 to pass through, and the water tank 338 contains water 339 for the carrier jig 2 to soak for cleaning the wafer 1. Two solid rollers 515 and two liquid cutting rollers 516 are also configured at the front and rear ends of the water tank 338. The second cleaning section 332 includes a plurality of second water nozzles 340 arranged in the water tank 338 and spaced apart along the first conveying direction D1 and arranged in a staggered up and down direction, and two first water nozzles 340 spaced apart in the vertical direction Z and located on the downstream side of the water tank 338 Two jet heads 341. One part of the second water spray heads 340 sprays water 339 in the form of a water jet to the wafer 1 on the carrier jig 2 upwards, and the other part sprays water 339 in the form of a water jet to the wafer 1 downwards, thereby, To perform the second cleaning on wafer 1. The structure and arrangement of each second air jet 341 are the same as the structure and arrangement of air jet 315 (Figure 12). The lower second air jet 341 is inclined upward and forward jets, while the upper second air jet 341 is Air jet downward and forward at an oblique angle. Thereby, the aforementioned second air jet head 341 can jet the wafer 1 on the carrier jig 2 conveyed by the first conveying mechanism 51 to remove the water 339 on the wafer 1.

第三清洗段333包含多對沿第一輸送方向D1相間隔排列的第一噴灑件342,及兩個沿上下方向Z相間隔且位於第一噴灑件342下游側的第三噴氣頭343。各第一噴灑件342的結構及設置方式與噴灑件314(如圖12)的結構及設置方式相同。每一對的兩個第一噴灑件342沿上下方向Z相間隔,其中,下方第一噴灑件342用以朝上對晶片1噴灑水344,而上方第一噴灑件342則用以朝下對晶片 1噴灑水344。藉此,使得前述第一噴灑件342能對晶片1進行第三道清洗。各第三噴氣頭343的結構及設置方式與噴氣頭315(如圖12)的結構及設置方式相同,下方第三噴氣頭343呈傾斜地朝上並朝前對晶片1噴氣,上方第三噴氣頭343則是呈傾斜地朝下並朝前對晶片1噴氣。藉此,使得前述第三噴氣頭343所噴出的壓縮氣體能移除晶片1上的水344。 The third cleaning section 333 includes a plurality of pairs of first spraying elements 342 spaced apart along the first conveying direction D1, and two third air jets 343 spaced apart along the vertical direction Z and located on the downstream side of the first spraying element 342. The structure and arrangement of each first spraying element 342 are the same as the structure and arrangement of the spraying element 314 (as shown in FIG. 12). The two first spraying members 342 of each pair are spaced along the up-down direction Z. The lower first spraying member 342 is used to spray water 344 on the wafer 1 upward, and the upper first spraying member 342 is used to spray water 344 downwards. Chip 1 Spray 344 of water. Thereby, the aforementioned first spraying member 342 can perform the third cleaning on the wafer 1. The structure and arrangement of the third jet heads 343 are the same as those of the jet head 315 (Figure 12). The lower third jet head 343 is inclined upward and forward to jet the wafer 1 and the upper third jet head 343 jets the wafer 1 obliquely downward and forward. Thereby, the compressed gas sprayed by the aforementioned third spray head 343 can remove the water 344 on the wafer 1.

第四清洗段334包含多對沿第一輸送方向D1相間隔排列的第二噴灑件345、兩對位於第二噴灑件345下游側的第四噴氣頭346,及兩個位於第二噴灑件345下游側的側噴氣嘴347。各第二噴灑件345的結構及設置方式與噴灑件314(如圖12)的結構及設置方式相同。每一對的兩個第二噴灑件345沿上下方向Z相間隔,其中,下方第二噴灑件345用以朝上對晶片1噴灑水348,而上方第二噴灑件345則用以朝下對晶片1噴灑水348。藉此,使得前述第二噴灑件345能對晶片1進行第四道清洗。 The fourth cleaning section 334 includes a plurality of pairs of second spraying members 345 arranged at intervals along the first conveying direction D1, two pairs of fourth spraying heads 346 located on the downstream side of the second spraying member 345, and two second spraying members 345 The side air nozzle 347 on the downstream side. The structure and arrangement of each second spraying element 345 are the same as the structure and arrangement of the spraying element 314 (as shown in FIG. 12). The two second spraying members 345 of each pair are spaced along the up-down direction Z, wherein the lower second spraying member 345 is used to spray water 348 upwards on the wafer 1, and the upper second spraying member 345 is used to spray downwards The wafer 1 is sprayed with water 348. Thereby, the aforementioned second spraying member 345 can perform the fourth cleaning on the wafer 1.

參閱圖18及圖19,兩對第四噴氣頭346沿第一輸送方向D1相間隔排列,每一對的兩個第四噴氣頭346沿上下方向Z相間隔。各第四噴氣頭346的結構及設置方式與噴氣頭315(如圖12)的結構及設置方式相同,下方第四噴氣頭346呈傾斜地朝上並朝前對晶片1(如圖7)噴氣,上方第四噴氣頭346則是呈傾斜地朝下並朝前對晶片1噴氣。藉此,使得前述第四噴氣頭361所噴出的壓縮氣體 能移除晶片1上的水348。各側噴氣嘴347的結構及設置方式與側噴氣嘴316(如圖14)的結構及設置方式相同。兩個側噴氣嘴347沿左右方向Y相間隔,兩個側噴氣嘴347其中之一是沿著左噴氣方向D3對第一輸送機構51所輸送的承載治具2上的晶片1側向噴氣,而其中另一是沿著右噴氣方向D4對承載治具2上的晶片1側向噴氣,藉此,以移除晶片1上的水348。 Referring to FIGS. 18 and 19, the two pairs of fourth air jets 346 are spaced apart along the first conveying direction D1, and the two fourth air jets 346 of each pair are spaced apart along the up-down direction Z. The structure and arrangement of each fourth air jet 346 are the same as that of air jet 315 (as shown in FIG. 12). The lower fourth air jet 346 is inclined upward and forward to jet the wafer 1 (as shown in FIG. 7). The upper fourth air jet head 346 is inclined downward and forward to jet the wafer 1. As a result, the compressed gas ejected from the fourth jet head 361 is The water 348 on the wafer 1 can be removed. The structure and arrangement of each side air nozzle 347 are the same as the structure and arrangement of the side air nozzle 316 (see FIG. 14). The two side air nozzles 347 are spaced apart in the left and right direction Y, and one of the two side air nozzles 347 is to blow sidewardly on the wafer 1 on the carrier jig 2 conveyed by the first conveying mechanism 51 along the left air blowing direction D3, The other is to spray sidewardly on the wafer 1 on the carrier jig 2 along the right spray direction D4 to remove the water 348 on the wafer 1.

參閱圖20及圖21,去氧化區35整體結構與圖15的蝕刻區32結構相同,去氧化區35包括一分隔段351、一位於分隔段351下游側的化學反應段352,及一位於化學反應段352下游側的吹乾段353。分隔段351位於第四清洗段334(如圖18)下游側,用以分隔第四清洗段334與化學反應段352,以避免化學反應段352內的化學藥液滲流入第四清洗段334內。化學反應段352形成一用以供第一輸送機構51所輸送的承載治具2穿過的第二藥液槽354,第二藥液槽354容置有用以供承載治具2浸泡的第二藥液355。第二藥液槽354前後兩端同樣配置有兩個實心滾輪515,及兩個液切滾輪516。在本實施例中,第二藥液355為用以對各晶片1的引腳12(如圖1)產生去氧化反應的去氧化液。化學反應段352包含多個設置於第二藥液槽354內並沿第一輸送方向D1相間隔且上下交錯排列的第二藥液噴頭356。該等第二藥液噴頭356中的一部分朝上對承載治具2上的晶片1噴出水刀形式的第二藥液355,而另一部分則是朝下對晶 片1噴出水刀形式的第二藥液355。 20 and 21, the overall structure of the deoxidation zone 35 is the same as that of the etching zone 32 in FIG. 15. The deoxidation zone 35 includes a partition section 351, a chemical reaction section 352 located on the downstream side of the partition section 351, and a chemical reaction section 352 located on the downstream side of the partition section 351. The drying section 353 on the downstream side of the reaction section 352. The separating section 351 is located on the downstream side of the fourth cleaning section 334 (as shown in FIG. 18), and is used to separate the fourth cleaning section 334 from the chemical reaction section 352, so as to prevent the chemical liquid in the chemical reaction section 352 from infiltrating into the fourth cleaning section 334 . The chemical reaction section 352 forms a second medicinal solution tank 354 for the carrier jig 2 conveyed by the first conveying mechanism 51 to pass through. The second medicinal liquid tank 354 contains the second medicinal solution tank 354 for immersing the carrier jig 2 Liquid medicine 355. Two solid rollers 515 and two liquid cutting rollers 516 are also arranged at the front and rear ends of the second liquid medicine tank 354. In this embodiment, the second chemical solution 355 is a deoxidizing solution used to generate a deoxidizing reaction on the pins 12 of each chip 1 (as shown in FIG. 1). The chemical reaction section 352 includes a plurality of second chemical liquid spray nozzles 356 arranged in the second chemical liquid tank 354 and spaced apart along the first conveying direction D1 and staggered up and down. A part of the second chemical liquid spraying heads 356 sprays the second chemical liquid 355 in the form of a water jet to the wafer 1 on the supporting jig 2 facing upwards, and the other part is directed downwards to the wafer The sheet 1 sprays the second liquid medicine 355 in the form of a water jet.

參閱圖20及圖21,吹乾段353包含位於第二藥液槽354下游側的兩對第二噴頭357及兩個第二側噴嘴358。兩對第二噴頭357沿第一輸送方向D1相間隔排列,每一對的兩個第二噴頭357沿上下方向Z相間隔。各第二噴頭357的結構及設置方式與噴氣頭315(如圖12)的結構及設置方式相同,下方第二噴頭357呈傾斜地朝上並朝前噴氣,上方第一噴頭327則是呈傾斜地朝下並朝前噴氣。藉此,使得前述第一噴頭327能對晶片1噴氣以移除晶片1上的第二藥液355。各第二側噴嘴358的結構及設置方式與側噴氣嘴316(如圖14)的結構及設置方式相同。兩個第二側噴嘴358沿左右方向Y相間隔,兩個第二側噴嘴358其中之一是沿著左噴氣方向D3對第一輸送機構51所輸送的承載治具2上的晶片1側向噴氣,而其中另一是沿著右噴氣方向D4對承載治具2上的晶片1側向噴氣,藉此,以移除晶片1上的第二藥液355。 Referring to FIGS. 20 and 21, the drying section 353 includes two pairs of second spray heads 357 and two second side nozzles 358 located on the downstream side of the second liquid tank 354. The two pairs of second nozzles 357 are spaced apart along the first conveying direction D1, and the two second nozzles 357 of each pair are spaced apart along the vertical direction Z. The structure and arrangement of each second nozzle 357 are the same as those of the air jet 315 (Figure 12). The lower second nozzle 357 is tilted upward and jets forward, and the upper first nozzle 327 is tilted toward the front. Jet down and forward. In this way, the aforementioned first spray head 327 can jet the wafer 1 to remove the second chemical liquid 355 on the wafer 1. The structure and arrangement of each second side nozzle 358 are the same as the structure and arrangement of the side air nozzle 316 (see FIG. 14). The two second-side nozzles 358 are spaced apart in the left-right direction Y, and one of the two second-side nozzles 358 is laterally to the wafer 1 on the carrier jig 2 conveyed by the first conveying mechanism 51 along the left air jet direction D3 Air jets, and the other is to jet the wafer 1 on the carrier fixture 2 laterally along the right air jet direction D4, so as to remove the second chemical solution 355 on the wafer 1.

參閱圖22,第二清洗區36的結構與圖18的第一清洗區33的結構類似,差異只在於第二清洗區36少了如第一清洗區33的第三清洗段333(如圖18)。第二清洗區36包括一位於吹乾段353(如圖20)下游側的第一清洗段361、一位於第一清洗段361下游側的第二清洗段362,及一位於第二清洗段362下游側的第三清洗段363。第一清洗段361包含兩個沿上下方向Z相間隔的第一噴水頭364,及 兩個沿上下方向Z相間隔且位於第一噴水頭364下游側的第一噴氣頭365。各第一噴水頭364的結構與第一噴水頭335(如圖18)的結構相同。兩個第一噴水頭364其中之一朝上對承載治具2上的晶片1(如圖7)噴出水刀形式的水366,而其中另一則是朝下對晶片1噴出水刀形式的水366,藉此,以對晶片1進行第一道清洗。各第一噴氣頭365的結構及設置方式與噴氣頭315(如圖12)的結構及設置方式相同,下方第一噴氣頭365呈傾斜地朝上並朝前噴氣,上方第一噴氣頭365則是呈傾斜地朝下並朝前噴氣。藉此,使得前述第一噴氣頭365能對第一輸送機構51所輸送的承載治具2上的晶片1噴氣以移除晶片1上的水366。 Referring to FIG. 22, the structure of the second cleaning area 36 is similar to the structure of the first cleaning area 33 in FIG. 18. The only difference is that the second cleaning area 36 is missing the third cleaning section 333 of the first cleaning area 33 (as shown in FIG. 18 ). The second cleaning zone 36 includes a first cleaning section 361 located on the downstream side of the drying section 353 (as shown in FIG. 20), a second cleaning section 362 located on the downstream side of the first cleaning section 361, and a second cleaning section 362 located on the downstream side of the first cleaning section 361. The third cleaning section 363 on the downstream side. The first cleaning section 361 includes two first water jets 364 spaced apart along the vertical direction Z, and Two first jet heads 365 spaced along the vertical direction Z and located on the downstream side of the first water jet head 364. The structure of each first sprinkler head 364 is the same as that of the first sprinkler head 335 (see FIG. 18). One of the two first water spray heads 364 sprays water 366 in the form of a water jet toward the wafer 1 (as shown in FIG. 7) on the carrier jig 2 upward, and the other sprays water in the form of a water jet toward the wafer 1 downward. 366, by this, the first cleaning of the wafer 1 is performed. The structure and arrangement of each first air jet 365 are the same as those of air jet 315 (as shown in Figure 12). The lower first air jet 365 is inclined upward and forward jets, while the upper first air jet 365 is Air jet downward and forward at an oblique angle. Thereby, the aforementioned first air jet head 365 can air jet to the wafer 1 on the carrier jig 2 conveyed by the first conveying mechanism 51 to remove the water 366 on the wafer 1.

第二清洗段362形成有一用以供第一輸送機構51所輸送的承載治具2穿過的水槽367,水槽367內容置有用以供承載治具2浸泡用以清洗晶片1的水368。水槽367前後兩端同樣配置有兩個實心滾輪515,及兩個液切滾輪516。第二清洗段362包含多個設置於水槽367內並沿第一輸送方向D1相間隔且上下交錯排列的第二噴水頭369,及兩個沿上下方向Z相間隔且位於水槽367下游側的第二噴氣頭370。該等第二噴水頭369中的一部分朝上對承載治具2上的晶片1噴出水刀形式的水368,而另一部分則是朝下對晶片1噴出水刀形式的水368,藉此,以對晶片1進行第二道清洗。各第二噴氣頭370的結構及設置方式與噴氣頭315(如圖12)的結構及設置方 式相同,下方第二噴氣頭370呈傾斜地朝上並朝前噴氣,上方第二噴氣頭370則是呈傾斜地朝下並朝前噴氣。藉此,使得前述第二噴氣頭370能對第一輸送機構51所輸送的承載治具2上的晶片1噴氣以移除晶片1上的水368。 The second cleaning section 362 is formed with a water tank 367 for the carrier jig 2 conveyed by the first conveying mechanism 51 to pass through, and the water tank 367 contains water 368 for the carrier jig 2 to soak for cleaning the wafer 1. Two solid rollers 515 and two liquid cutting rollers 516 are also configured at the front and rear ends of the water tank 367. The second cleaning section 362 includes a plurality of second sprinklers 369 arranged in the water tank 367 and spaced apart along the first conveying direction D1 and staggered up and down, and two first water nozzles 369 spaced in the vertical direction Z and located on the downstream side of the water tank 367 Two jet head 370. One part of the second water spray heads 369 sprays water 368 in the form of a water jet to the wafer 1 on the carrier jig 2 upwards, and the other part sprays water 368 in the form of a water jet to the wafer 1 downwards, thereby, To perform the second cleaning on wafer 1. The structure and arrangement of each second air jet 370 are the same as the structure and arrangement of air jet 315 (as shown in Figure 12). The formula is the same, the lower second jet head 370 is inclined upward and forward jets, and the upper second jet head 370 is inclined downward and forward jets. Thereby, the aforementioned second air jet head 370 can air jet the wafer 1 on the carrier jig 2 conveyed by the first conveying mechanism 51 to remove the water 368 on the wafer 1.

參閱圖22及圖23,第三清洗段363包含多對沿第一輸送方向D1相間隔排列的噴灑件371、兩對位於噴灑件371下游側的第三噴氣頭372,及兩個位於噴灑件371下游側的側噴氣嘴373。各噴灑件371的結構及設置方式與噴灑件314(如圖12)的結構及設置方式相同。每一對的兩個噴灑件371沿上下方向Z相間隔,其中,下方噴灑件371用以朝上對晶片1噴灑水374,而上方噴灑件371則用以朝下對晶片1噴灑水374。藉此,使得前述噴灑件371能對晶片1進行第三道清洗。 Referring to Figures 22 and 23, the third cleaning section 363 includes a plurality of pairs of spraying elements 371 arranged at intervals along the first conveying direction D1, two pairs of third air jets 372 located on the downstream side of the spraying elements 371, and two spraying elements 371 Side jet nozzle 373 on the downstream side. The structure and arrangement of each spraying element 371 are the same as the structure and arrangement of the spraying element 314 (as shown in FIG. 12). The two spraying members 371 of each pair are spaced along the vertical direction Z. The lower spraying member 371 is used to spray water 374 on the wafer 1 upward, and the upper spraying member 371 is used to spray water 374 on the wafer 1 downward. Thereby, the aforementioned spraying member 371 can perform the third cleaning on the wafer 1.

兩對第三噴氣頭372沿第一輸送方向D1相間隔排列,每一對的兩個第三噴氣頭372沿上下方向Z相間隔。各第三噴氣頭372的結構及設置方式與噴氣頭315(如圖12)的結構及設置方式相同,下方第三噴氣頭372呈傾斜地朝上並朝前對晶片1噴氣,上方第三噴氣頭372則是呈傾斜地朝下並朝前對晶片1噴氣。藉此,使得前述第三噴氣頭372所噴出的壓縮氣體能移除晶片1上的水374。各側噴氣嘴373的結構及設置方式與側噴氣嘴316(如圖14)的結構及設置方式相同。兩個側噴氣嘴373沿左右方向Y相間隔, 兩個側噴氣嘴373其中之一是沿著左噴氣方向D3對第一輸送機構51所輸送的承載治具2上的晶片1側向噴氣,而其中另一是沿著右噴氣方向D4對承載治具2上的晶片1側向噴氣,藉此,以移除晶片1上的水374。 The two pairs of third air jets 372 are spaced apart along the first conveying direction D1, and the two third air jets 372 of each pair are spaced apart along the up-down direction Z. The structure and arrangement of each third jet head 372 are the same as the structure and arrangement of jet head 315 (Figure 12). The lower third jet head 372 is inclined upward and forward to jet the wafer 1 and the upper third jet head 372 jets the wafer 1 obliquely downward and forward. Thereby, the compressed gas sprayed by the aforementioned third spray head 372 can remove the water 374 on the wafer 1. The structure and arrangement of the side air nozzles 373 are the same as the structure and arrangement of the side air nozzles 316 (as shown in FIG. 14). The two side air nozzles 373 are spaced apart in the left and right direction Y, One of the two side air nozzles 373 is to air the wafer 1 on the carrier jig 2 conveyed by the first conveying mechanism 51 along the left air jet direction D3, and the other is to carry the carrier along the right air jet direction D4. The wafer 1 on the jig 2 is jetted from the side to remove the water 374 on the wafer 1.

參閱圖10及圖11,檢查區38位於第三清洗段363(如圖22)下游側。當第一輸送機構51輸送承載治具2移動至檢查區38時,工作人員通過控制第一輸送機構51停止運轉,承載治具2便能停止在檢查區38處。藉此,工作人員能將承載治具2取出,以檢查各晶片1的引腳12(如圖1)的蝕刻及清洗狀況。 10 and 11, the inspection area 38 is located on the downstream side of the third cleaning section 363 (as shown in FIG. 22). When the first conveying mechanism 51 transports the carrier jig 2 to the inspection area 38, the worker controls the first conveying mechanism 51 to stop the operation, and the carrier jig 2 can stop at the inspection area 38. In this way, the worker can take out the carrier jig 2 to check the etching and cleaning conditions of the pins 12 of each chip 1 (as shown in FIG. 1).

參閱圖24,移除區39整體結構與圖15的蝕刻區32結構相同,移除區39包括一分隔段391、一位於分隔段391下游側的化學反應段392,及一位於化學反應段392下游側的吹乾段393。分隔段391位於檢查區38(如圖11)下游側,用以分隔檢查區38與化學反應段392,以避免化學反應段392內的化學藥液滲流入檢查區38內。化學反應段392形成一用以供第一輸送機構51所輸送的承載治具2穿過的第三藥液槽394,第三藥液槽394容置有用以供承載治具2浸泡的第三藥液395。第三藥液槽394前後兩端同樣配置有兩個實心滾輪515,及兩個液切滾輪516。在本實施例中,第三藥液395為剝銀劑,其用以去除各晶片1的金屬保護層14(如圖2)。化學反應段392包含多個設置於第三藥液槽394內並沿第一輸送方向D1相 間隔且上下交錯排列的第三藥液噴頭396。該等第三藥液噴頭396中的一部分朝上對承載治具2上的晶片1(如圖7)噴出水刀形式的第三藥液395,而另一部分則是朝下對晶片1噴出水刀形式的第三藥液395。 Referring to FIG. 24, the overall structure of the removal zone 39 is the same as that of the etching zone 32 of FIG. 15. The removal zone 39 includes a partition section 391, a chemical reaction section 392 located on the downstream side of the partition section 391, and a chemical reaction section 392. The drying section 393 on the downstream side. The separating section 391 is located on the downstream side of the inspection area 38 (as shown in FIG. 11 ), and is used to separate the inspection area 38 from the chemical reaction section 392 to prevent the chemical liquid in the chemical reaction section 392 from infiltrating into the inspection area 38. The chemical reaction section 392 forms a third liquid tank 394 for the carrier jig 2 conveyed by the first conveying mechanism 51 to pass through. The third liquid tank 394 contains a third liquid tank for the carrier jig 2 to soak. Liquid medicine 395. Two solid rollers 515 and two liquid cutting rollers 516 are also configured at the front and rear ends of the third liquid tank 394. In this embodiment, the third liquid medicine 395 is a silver stripping agent, which is used to remove the metal protection layer 14 of each chip 1 (as shown in FIG. 2). The chemical reaction section 392 includes a plurality of phases D1 arranged in the third liquid tank 394 and along the first conveying direction. The third liquid spray nozzles 396 are spaced apart and staggered up and down. A part of the third chemical liquid spraying heads 396 sprays the third chemical liquid 395 in the form of a water jet to the wafer 1 (as shown in FIG. 7) on the carrier jig 2 upward, and the other part sprays water downward to the wafer 1 The third liquid medicine 395 in the form of a knife.

參閱圖24及圖25,吹乾段393包含位於第三藥液槽394下游側的兩對第三噴頭397及兩個第三側噴嘴398。兩對第三噴頭397沿第一輸送方向D1相間隔排列,每一對的兩個第三噴頭397沿上下方向Z相間隔。各第三噴頭397的結構及設置方式與第一噴頭327(如圖15)的結構及設置方式相同,下方第三噴頭397呈傾斜地朝上並朝前噴氣,上方第三噴頭397則是呈傾斜地朝下並朝前噴氣。藉此,使得前述第三噴頭397能對晶片1(如圖7)噴氣以移除晶片1上的第三藥液395。各第三側噴嘴398的結構及設置方式與第一側噴嘴328(如圖15)的結構及設置方式相同。兩個第三側噴嘴398沿左右方向Y相間隔,兩個第三側噴嘴398其中之一是沿著左噴氣方向D3對第一輸送機構51所輸送的承載治具2上的晶片1側向噴氣,而其中另一是沿著右噴氣方向D4對承載治具2上的晶片1側向噴氣,藉此,以移除晶片1上的第三藥液395。 Referring to FIGS. 24 and 25, the drying section 393 includes two pairs of third spray heads 397 and two third side nozzles 398 located on the downstream side of the third liquid tank 394. The two pairs of third nozzles 397 are spaced apart along the first conveying direction D1, and the two third nozzles 397 of each pair are spaced apart along the up-down direction Z. The structure and arrangement of the third nozzles 397 are the same as those of the first nozzle 327 (Figure 15). The lower third nozzle 397 is inclined upward and jets forward, and the upper third nozzle 397 is inclined. Jet down and forward. Thereby, the aforementioned third spray head 397 can spray the wafer 1 (as shown in FIG. 7) to remove the third chemical liquid 395 on the wafer 1. The structure and arrangement of each third side nozzle 398 are the same as the structure and arrangement of the first side nozzle 328 (as shown in FIG. 15). The two third-side nozzles 398 are spaced apart in the left-right direction Y, and one of the two third-side nozzles 398 is lateral to the wafer 1 on the carrier jig 2 conveyed by the first conveying mechanism 51 along the left air jet direction D3 Air jets, and the other is to jet the wafer 1 on the carrier fixture 2 laterally along the right air jet direction D4 to remove the third liquid medicine 395 on the wafer 1.

參閱圖26,第三清洗區40的結構與圖18的第一清洗區33的結構類似,差異在於第三清洗區40少了如第一清洗區33的第二清洗段332及第三清洗段333(如圖18)。第三清洗區40包括一位 於吹乾段393(如圖24)下游側的第一清洗段401,及一位於第一清洗段401下游側的第二清洗段402。第一清洗段401包含兩個沿上下方向Z相間隔的第一噴水頭403,及兩個沿上下方向Z相間隔且位於第一噴水頭403下游側的第一噴氣頭404。各第一噴水頭403的結構與第一噴水頭335(如圖18)的結構相同。兩個第一噴水頭403其中之一朝上對承載治具2上的晶片1(如圖7)噴出水刀形式的水405,而其中另一則是朝下對晶片1噴出水刀形式的水405,藉此,以對晶片1進行第一道清洗。各第一噴氣頭404的結構及設置方式與第一噴氣頭336(如圖18)的結構及設置方式相同,下方第一噴氣頭404呈傾斜地朝上並朝前噴氣,上方第一噴氣頭404則是呈傾斜地朝下並朝前噴氣。藉此,使得前述第一噴氣頭404能對第一輸送機構51所輸送的承載治具2上的晶片1噴氣以移除晶片1上的水405。 Referring to FIG. 26, the structure of the third cleaning zone 40 is similar to the structure of the first cleaning zone 33 of FIG. 18. The difference is that the third cleaning zone 40 lacks the second cleaning section 332 and the third cleaning section of the first cleaning zone 33. 333 (Figure 18). The third cleaning zone 40 includes one A first cleaning section 401 on the downstream side of the drying section 393 (as shown in FIG. 24), and a second cleaning section 402 located on the downstream side of the first cleaning section 401. The first cleaning section 401 includes two first water jet heads 403 spaced apart along the up-down direction Z, and two first jet heads 404 spaced apart along the up-down direction Z and located on the downstream side of the first water jet head 403. The structure of each first water spray head 403 is the same as that of the first water spray head 335 (as shown in FIG. 18). One of the two first water jets 403 sprays water 405 in the form of a water jet toward the wafer 1 (as shown in FIG. 7) on the carrier jig 2 upward, and the other sprays water in the form of a water jet toward the wafer 1 downward. 405. By this, the first cleaning of the wafer 1 is performed. The structure and arrangement of each first air jet 404 are the same as the structure and arrangement of the first air jet 336 (as shown in FIG. 18). The lower first air jet 404 is inclined upward and forward jets, and the upper first air jet 404 The jet is tilted downward and forward. Thereby, the aforementioned first air jet head 404 can jet the wafer 1 on the carrier fixture 2 conveyed by the first conveying mechanism 51 to remove the water 405 on the wafer 1.

參閱圖26及圖27,第二清洗段402包含多對沿第一輸送方向D1相間隔排列的噴灑件406、兩對位於噴灑件406下游側的第二噴氣頭407,及兩個位於噴灑件406下游側的側噴氣嘴408。各噴灑件406的結構及設置方式與第二噴灑件345(如圖18)的結構及設置方式相同。每一對的兩個噴灑件406沿上下方向Z相間隔,其中,下方噴灑件406用以朝上對晶片1(如圖7)噴灑水409,而上方噴灑件406則用以朝下對晶片1噴灑水409。藉此,使得前述噴灑件406能對晶片1進行第二道清洗。 Referring to Figures 26 and 27, the second cleaning section 402 includes a plurality of pairs of spraying elements 406 spaced apart along the first conveying direction D1, two pairs of second air jets 407 located on the downstream side of the spraying elements 406, and two spraying elements 406 The side air nozzle 408 on the downstream side. The structure and arrangement of each spraying element 406 are the same as the structure and arrangement of the second spraying element 345 (as shown in FIG. 18). The two spraying elements 406 of each pair are spaced apart along the up and down direction Z. The lower spraying element 406 is used to spray water 409 upward to the wafer 1 (as shown in FIG. 7), and the upper spraying element 406 is used to spray the wafer downwards. 1 Spray water 409. Thereby, the aforementioned spraying member 406 can perform the second cleaning on the wafer 1.

兩對第二噴氣頭407沿第一輸送方向D1相間隔排列,每一對的兩個第二噴氣頭407沿上下方向Z相間隔。各第二噴氣頭407的結構及設置方式與第四噴氣頭346(如圖18)的結構及設置方式相同,下方第二噴氣頭407呈傾斜地朝上並朝前對晶片1噴氣,上方第二噴氣頭407則是呈傾斜地朝下並朝前對晶片1噴氣。藉此,使得前述第二噴氣頭407所噴出的壓縮氣體能移除晶片1上的水409。各側噴氣嘴408的結構及設置方式與側噴氣嘴347(如圖19)的結構及設置方式相同。兩個側噴氣嘴408沿左右方向Y相間隔,兩個側噴氣嘴408其中之一是沿著左噴氣方向D3對第一輸送機構51所輸送的承載治具2上的晶片1側向噴氣,而其中另一是沿著右噴氣方向D4對承載治具2上的晶片1側向噴氣,藉此,以移除晶片1上的水409。 The two pairs of second air jets 407 are spaced apart along the first conveying direction D1, and the two second air jets 407 of each pair are spaced apart along the up-down direction Z. The structure and arrangement of each second jet head 407 are the same as the structure and arrangement of the fourth jet head 346 (Figure 18). The lower second jet head 407 is inclined upward and forward to jet the wafer 1 and the upper second The jet head 407 jets the wafer 1 obliquely downward and forward. Thereby, the compressed gas sprayed by the aforementioned second spray head 407 can remove the water 409 on the wafer 1. The structure and arrangement of the side air nozzles 408 are the same as the structure and arrangement of the side air nozzles 347 (see FIG. 19). The two side air nozzles 408 are spaced apart in the left and right direction Y, and one of the two side air nozzles 408 is to blow sidewardly on the wafer 1 on the carrier jig 2 conveyed by the first conveying mechanism 51 along the left air blowing direction D3, The other is to spray sidewardly on the wafer 1 on the carrier fixture 2 along the right spray direction D4 to remove the water 409 on the wafer 1.

參閱圖28,中和區41整體結構與圖15的蝕刻區32結構類似,中和區41包括一分隔段411、一位於分隔段411下游側的化學反應段412,及一位於化學反應段412下游側的吹乾段413。分隔段411位於第二清洗段402(如圖26)下游側,用以分隔第二清洗段402與化學反應段412,以避免化學反應段412內的化學藥液滲流入第二清洗段402內。化學反應段412形成一用以供第一輸送機構51所輸送的承載治具2穿過的第四藥液槽414,第四藥液槽414容置有用以供承載治具2浸泡的第四藥液415。第四藥液槽414前後兩端同 樣配置有兩個實心滾輪515,及兩個液切滾輪516。在本實施例中,第四藥液415為中和劑,其用以中和去除各晶片1的金屬導熱層13(如圖2)上所形成的氧化物。化學反應段412包含多個設置於第四藥液槽414內並沿第一輸送方向D1相間隔且上下交錯排列的第四藥液噴頭416。該等第四藥液噴頭416中的一部分朝上對承載治具2上的晶片1(如圖7)噴出水刀形式的第四藥液415,而另一部分則是朝下對晶片1噴出水刀形式的第四藥液415。 Referring to FIG. 28, the overall structure of the neutralization zone 41 is similar to the structure of the etching zone 32 in FIG. 15. The neutralization zone 41 includes a partition section 411, a chemical reaction section 412 located on the downstream side of the partition section 411, and a chemical reaction section 412 The drying section 413 on the downstream side. The separating section 411 is located on the downstream side of the second cleaning section 402 (as shown in FIG. 26), and is used to separate the second cleaning section 402 from the chemical reaction section 412 to prevent the chemical liquid in the chemical reaction section 412 from infiltrating into the second cleaning section 402 . The chemical reaction section 412 forms a fourth liquid tank 414 for the carrier jig 2 conveyed by the first conveying mechanism 51 to pass through, and the fourth liquid tank 414 contains a fourth liquid tank for the carrier jig 2 to soak. Liquid medicine 415. The front and rear ends of the fourth liquid tank 414 are the same There are two solid rollers 515 and two liquid cutting rollers 516 in this configuration. In this embodiment, the fourth chemical solution 415 is a neutralizer, which is used to neutralize and remove the oxide formed on the metal thermally conductive layer 13 of each wafer 1 (as shown in FIG. 2). The chemical reaction section 412 includes a plurality of fourth chemical liquid spray nozzles 416 arranged in the fourth chemical liquid tank 414 and spaced apart along the first conveying direction D1 and staggered up and down. A part of the fourth chemical liquid spraying heads 416 sprays the fourth chemical liquid 415 in the form of a water jet to the wafer 1 (as shown in FIG. 7) on the carrier jig 2 upward, and the other part sprays water downward to the wafer 1 The fourth liquid medicine 415 in the form of a knife.

參閱圖28及圖29,吹乾段413包含位於第四藥液槽414下游側的兩對第四噴頭417及兩個第四側噴嘴418。兩對第四噴頭417沿第一輸送方向D1相間隔排列,每一對的兩個第四噴頭417沿上下方向Z相間隔。各第四噴頭417的結構及設置方式與第一噴頭327(如圖15)的結構及設置方式相同,下方第四噴頭417呈傾斜地朝上並朝前噴氣,上方第四噴頭417則是呈傾斜地朝下並朝前噴氣。藉此,使得前述第四噴頭417能對晶片1(如圖7)噴氣以移除晶片1上的第四藥液415。各第四側噴嘴418的結構及設置方式與第一側噴嘴328(如圖17)的結構及設置方式相同。兩個第四側噴嘴418沿左右方向Y相間隔,兩個第四側噴嘴418其中之一是沿著左噴氣方向D3對第一輸送機構51所輸送的承載治具2上的晶片1側向噴氣,而其中另一是沿著右噴氣方向D4對承載治具2上的晶片1側向噴氣,藉此,以移除晶片1上的第四藥液415。 Referring to FIGS. 28 and 29, the drying section 413 includes two pairs of fourth spray heads 417 and two fourth side nozzles 418 located on the downstream side of the fourth liquid tank 414. The two pairs of fourth nozzles 417 are spaced apart along the first conveying direction D1, and the two fourth nozzles 417 of each pair are spaced apart along the up-down direction Z. The structure and arrangement of the fourth nozzles 417 are the same as those of the first nozzle 327 (Figure 15). The lower fourth nozzle 417 is inclined upward and air jets forward, and the upper fourth nozzle 417 is inclined. Jet down and forward. Thereby, the aforementioned fourth spray head 417 can blow air to the wafer 1 (as shown in FIG. 7) to remove the fourth chemical solution 415 on the wafer 1. The structure and arrangement of each fourth side nozzle 418 are the same as the structure and arrangement of the first side nozzle 328 (as shown in FIG. 17). The two fourth side nozzles 418 are spaced apart along the left and right direction Y, and one of the two fourth side nozzles 418 is lateral to the wafer 1 on the carrier jig 2 conveyed by the first conveying mechanism 51 along the left air jet direction D3 Air jets, and the other is to jet the wafer 1 on the carrier fixture 2 laterally along the right air jet direction D4 to remove the fourth chemical solution 415 on the wafer 1.

參閱圖30,第四清洗區42的結構與圖22的第二清洗區36結構相同。第四清洗區42包括一位於吹乾段413(如圖28)下游側的第一清洗段421、一位於第一清洗段421下游側的第二清洗段422,及一位於第二清洗段422下游側的第三清洗段423。第一清洗段421包含兩個沿上下方向Z相間隔的第一噴水頭424,及兩個沿上下方向Z相間隔且位於第一噴水頭424下游側的第一噴氣頭425。各第一噴水頭424的結構與第一噴水頭364(如圖22)的結構相同。兩個第一噴水頭424其中之一朝上對承載治具2上的晶片1(如圖7)噴出水刀形式的水426,而其中另一則是朝下對晶片1噴出水刀形式的水426,藉此,以對晶片1進行第一道清洗。各第一噴氣頭425的結構及設置方式與第一噴氣頭365(如圖22)的結構及設置方式相同,下方第一噴氣頭425呈傾斜地朝上並朝前噴氣,上方第一噴氣頭425則是呈傾斜地朝下並朝前噴氣。藉此,使得前述第一噴氣頭425能對第一輸送機構51所輸送的承載治具2上的晶片1噴氣以移除晶片1上的水426。 Referring to FIG. 30, the structure of the fourth cleaning area 42 is the same as the structure of the second cleaning area 36 of FIG. 22. The fourth cleaning zone 42 includes a first cleaning section 421 located on the downstream side of the drying section 413 (as shown in Figure 28), a second cleaning section 422 located on the downstream side of the first cleaning section 421, and a second cleaning section 422 located on the downstream side of the first cleaning section 421. The third cleaning section 423 on the downstream side. The first cleaning section 421 includes two first water jet heads 424 spaced apart along the up-down direction Z, and two first jet heads 425 spaced apart along the up-down direction Z and located on the downstream side of the first water jet head 424. The structure of each first sprinkler head 424 is the same as the structure of the first sprinkler head 364 (FIG. 22). One of the two first water spray heads 424 sprays water 426 in the form of a water jet toward the wafer 1 (as shown in FIG. 7) on the carrier jig 2 upward, and the other sprays water in the form of a water jet toward the wafer 1 downward. 426, with this, the first cleaning of the wafer 1 is performed. The structure and arrangement of each first air jet 425 are the same as the structure and arrangement of the first air jet 365 (as shown in Figure 22). The lower first air jet 425 is inclined upward and forward jets, and the upper first air jet 425 The jet is tilted downward and forward. Thereby, the aforementioned first air jet 425 can jet the wafer 1 on the carrier fixture 2 conveyed by the first conveying mechanism 51 to remove the water 426 on the wafer 1.

第二清洗段422形成有一用以供第一輸送機構51所輸送的承載治具2穿過的水槽427,水槽427內容置有用以供承載治具2浸泡用以清洗晶片1的水428。水槽427前後兩端同樣配置有兩個實心滾輪515,及兩個液切滾輪516。第二清洗段422包含多個設置於水槽427內並沿第一輸送方向D1相間隔且上下交錯排列的第二 噴水頭429,及兩個沿上下方向Z相間隔且位於水槽427下游側的第二噴氣頭430。該等第二噴水頭429中的一部分朝上對承載治具2上的晶片1噴出水刀形式的水428,而另一部分則是朝下對晶片1噴出水刀形式的水428,藉此,以對晶片1進行第二道清洗。各第二噴氣頭430的結構及設置方式與第二噴氣頭370(如圖22)的結構及設置方式相同,下方第二噴氣頭430呈傾斜地朝上並朝前噴氣,上方第二噴氣頭430則是呈傾斜地朝下並朝前噴氣。藉此,使得前述第二噴氣頭430能對第一輸送機構51所輸送的承載治具2上的晶片1噴氣以移除晶片1上的水428。 The second cleaning section 422 is formed with a water tank 427 for the carrier jig 2 conveyed by the first conveying mechanism 51 to pass through, and the water tank 427 contains water 428 for the carrier jig 2 to soak for cleaning the wafer 1. Two solid rollers 515 and two liquid cutting rollers 516 are also configured at the front and rear ends of the water tank 427. The second cleaning section 422 includes a plurality of second cleaning sections arranged in the water tank 427 and spaced apart along the first conveying direction D1 and staggered up and down. The water jet 429, and two second air jets 430 spaced along the vertical direction Z and located on the downstream side of the water tank 427. One part of the second water spray heads 429 sprays water 428 in the form of a water jet to the wafer 1 on the carrier jig 2 upwards, and the other part sprays water 428 in the form of a water jet to the wafer 1 downwards, thereby, To perform the second cleaning on wafer 1. The structure and arrangement of each second air jet 430 are the same as the structure and arrangement of the second air jet 370 (as shown in FIG. 22). The lower second air jet 430 is inclined upward and forward jets, and the upper second air jet 430 The jet is tilted downward and forward. Thereby, the aforementioned second air jet head 430 can jet the wafer 1 on the carrier fixture 2 conveyed by the first conveying mechanism 51 to remove the water 428 on the wafer 1.

參閱圖30及圖31,第三清洗段423包含多對沿第一輸送方向D1相間隔排列的噴灑件431、兩對位於噴灑件431下游側的第三噴氣頭432,及兩個位於噴灑件431下游側的側噴氣嘴433。各噴灑件431的結構及設置方式與噴灑件370(如圖22)的結構及設置方式相同。每一對的兩個噴灑件431沿上下方向Z相間隔,其中,下方噴灑件431用以朝上對晶片1(如圖7)噴灑水434,而上方噴灑件431則用以朝下對晶片1噴灑水434。藉此,使得前述噴灑件431能對晶片1進行第三道清洗。 Referring to Figures 30 and 31, the third cleaning section 423 includes a plurality of pairs of spraying elements 431 arranged at intervals along the first conveying direction D1, two pairs of third air jets 432 located on the downstream side of the spraying elements 431, and two spraying elements 431 The side air nozzle 433 on the downstream side. The structure and arrangement of each spraying element 431 are the same as the structure and arrangement of the spraying element 370 (as shown in FIG. 22). The two spraying members 431 of each pair are spaced along the up and down direction Z. The lower spraying member 431 is used to spray water 434 upward to the wafer 1 (as shown in FIG. 7), and the upper spraying member 431 is used to spray the wafer downwards. 1 Spray 434 with water. Thereby, the aforementioned spraying member 431 can perform the third cleaning on the wafer 1.

兩對第三噴氣頭432沿第一輸送方向D1相間隔排列,每一對的兩個第三噴氣頭432沿上下方向Z相間隔。各第三噴氣頭432的結構及設置方式與第三噴氣頭372(如圖22)的結構及設置方 式相同,下方第三噴氣頭432呈傾斜地朝上並朝前對晶片1噴氣,上方第三噴氣頭432則是呈傾斜地朝下並朝前對晶片1噴氣。藉此,使得前述第三噴氣頭432所噴出的壓縮氣體能移除晶片1上的水434。各側噴氣嘴433的結構及設置方式與側噴氣嘴373(如圖23)的結構及設置方式相同。兩個側噴氣嘴433沿左右方向Y相間隔,兩個側噴氣嘴433其中之一是沿著左噴氣方向D3對第一輸送機構51所輸送的承載治具2上的晶片1側向噴氣,而其中另一是沿著右噴氣方向D4對承載治具2上的晶片1側向噴氣,藉此,以移除晶片1上的水434。 The two pairs of third air jets 432 are spaced apart along the first conveying direction D1, and the two third air jets 432 of each pair are spaced apart along the up-down direction Z. The structure and arrangement of each third air jet 432 are the same as the structure and arrangement of the third air jet 372 (Figure 22). The formula is the same, the lower third air jet head 432 is inclined upward and forward to jet the wafer 1 while the upper third air jet 432 is inclined downward and forward to jet the wafer 1. Thereby, the compressed gas sprayed by the aforementioned third spray head 432 can remove the water 434 on the wafer 1. The structure and arrangement of the side air nozzles 433 are the same as the structure and arrangement of the side air nozzles 373 (as shown in FIG. 23). The two side air nozzles 433 are spaced apart in the left and right direction Y, and one of the two side air nozzles 433 is to air sidewardly on the wafer 1 on the carrier fixture 2 conveyed by the first conveying mechanism 51 along the left air blowing direction D3, The other is to spray sidewardly on the wafer 1 on the carrier jig 2 along the right spray direction D4 to remove the water 434 on the wafer 1.

參閱圖32,乾燥區44包括一位於第三清洗段423(如圖30)下游側的吹乾段441,及一位於吹乾段441下游側的烘乾段442。吹乾段441包含多對沿第一輸送方向D1相間隔排列的第一吹風件443。每一對的兩個第一吹風件443沿上下方向Z相間隔,其中,下方第一吹風件443用以朝上對晶片1(如圖7)吹出風刀形式的壓縮風,而上方第一吹風件443則用以朝下對晶片1吹出風刀形式的壓縮風。藉此,以吹乾承載治具2上的晶片1。烘乾段442包含多對沿第一輸送方向D1相間隔且上下交錯排列的排列的第二吹風件444。該等第二吹風件444中的一部分朝上對承載治具2上的晶片1吹出風刀形式的壓縮風,而另一部分則是朝下對晶片1吹出風刀形式的壓縮風,藉此,以烘乾承載治具2上的晶片1。在本實施例中, 第一吹風件443所吹出的壓縮風的溫度是例如等於或小於60℃,而第二吹風件444所吹出的壓縮風的溫度是例如介於85~90℃。 Referring to FIG. 32, the drying zone 44 includes a drying section 441 located at the downstream side of the third cleaning section 423 (as shown in FIG. 30 ), and a drying section 442 located at the downstream side of the drying section 441. The drying section 441 includes a plurality of pairs of first blowing members 443 arranged at intervals along the first conveying direction D1. The two first blowing members 443 of each pair are spaced apart along the up and down direction Z, wherein the lower first blowing member 443 is used to blow compressed air in the form of an air knife to the wafer 1 (as shown in FIG. 7) upward, and the upper first blowing member 443 The blowing member 443 is used to blow compressed air in the form of an air knife to the wafer 1 downward. In this way, the wafer 1 on the carrier jig 2 is blow-dried. The drying section 442 includes a plurality of pairs of second blowing elements 444 spaced apart and staggered up and down along the first conveying direction D1. One part of the second blowing members 444 blows compressed air in the form of an air knife toward the wafer 1 on the carrier jig 2 upward, and the other part blows compressed air in the form of an air knife toward the wafer 1 downward, thereby, To dry the wafer 1 on the carrier fixture 2. In this embodiment, The temperature of the compressed air blown by the first blowing element 443 is, for example, equal to or less than 60° C., and the temperature of the compressed air blown by the second blowing element 444 is, for example, 85-90° C.

參閱圖33、圖34及圖35,移載裝置6位於機體3的後端302並包括一位於乾燥區44下游側的暫存機構61,及一位於暫存機構61下游側的橫移機構62。暫存機構61包含一第一輸送單元611,及一升降單元612。第一輸送單元611對應於第一輸送機構51的出料後端512,並具有多個沿第一輸送方向D1相間隔排列第一輸送輪613。該等第一輸送輪613用以承接由出料後端512所輸出的承載治具2(如圖32),並能沿第一輸送方向D1輸送承載治具2移動。升降單元612包括兩個導桿614、一滑動架615、多對承托桿616,及一第一驅動總成617。兩導桿614沿第一輸送方向D1相間隔排列,各導桿614的軸向沿上下方向Z延伸。滑動架615可滑動地連接於兩導桿614。多對承托桿616設置於滑動架615上並沿上下方向Z相間隔排列,每一對的兩個承托桿616沿前後方向X相間隔。各承托桿616可通過對應的兩個第一輸送輪613之間而沿上下方向Z移動,使得各對承托桿616能將位在第一輸送輪613上的承載治具2往上抬升以承托承載治具2,或者是將所承托的承載治具2放置於第一輸送輪613上。第一驅動總成617與滑動架615連接用以驅動滑動架615沿上下方向Z向上或向下移動。 33, 34 and 35, the transfer device 6 is located at the rear end 302 of the body 3 and includes a temporary storage mechanism 61 located on the downstream side of the drying zone 44, and a traverse mechanism 62 located on the downstream side of the temporary storage mechanism 61 . The temporary storage mechanism 61 includes a first conveying unit 611 and a lifting unit 612. The first conveying unit 611 corresponds to the discharge rear end 512 of the first conveying mechanism 51 and has a plurality of first conveying wheels 613 arranged at intervals along the first conveying direction D1. The first conveying wheels 613 are used to receive the load-bearing jig 2 (as shown in FIG. 32) output from the discharge rear end 512, and can move the load-bearing jig 2 along the first conveying direction D1. The lifting unit 612 includes two guide rods 614, a sliding frame 615, multiple pairs of supporting rods 616, and a first driving assembly 617. The two guide rods 614 are arranged at intervals along the first conveying direction D1, and the axial direction of each guide rod 614 extends in the up-down direction Z. The sliding frame 615 is slidably connected to the two guide rods 614. A plurality of pairs of supporting rods 616 are arranged on the sliding frame 615 and arranged at intervals along the up-down direction Z, and the two supporting rods 616 of each pair are spaced apart along the front-to-rear direction X. Each supporting rod 616 can move in the up and down direction Z between the corresponding two first conveying wheels 613, so that each pair of supporting rods 616 can lift the supporting jig 2 on the first conveying wheel 613 upward The supporting fixture 2 is supported, or the supported supporting fixture 2 is placed on the first conveying wheel 613. The first driving assembly 617 is connected to the sliding frame 615 to drive the sliding frame 615 to move up or down in the up and down direction Z.

橫移機構62包含一第二輸送單元621,及一橫移單元 622。第二輸送單元621包括多個沿第一輸送方向D1相間隔排列第二輸送輪623,該等第二輸送輪623用以承接由第一輸送單元611所輸出的承載治具2並能將其輸出至第二輸送機構52。橫移單元622包括一導軌624、一滑動件625,及一第二驅動總成626。導軌624呈長形且其長向沿左右方向Y延伸。滑動件625可滑動地連接於導軌624上並能沿左右方向Y滑動,滑動件625連接在第二輸送單元621底端。第二驅動總成626與滑動件625連接用以驅動滑動件625沿左右方向Y滑動,使得滑動件625能帶動第二輸送單元621在一對齊於第一輸送單元611的第一位置(如圖35),及一對齊於入料後端521的第二位置(如圖38)之間移動。當第二輸送單元621在第一位置時,第二輸送單元621能承接由第一輸送單元611所輸出的承載治具2。當第二輸送單元621在第二位置時,第二輸送單元621能將承接的承載治具2輸送至第二輸送機構52。藉此,使得第二輸送機構52能沿第二輸送方向D2(如圖10)輸送承載治具2於回流區45內移動,並經由出料前端522(如圖10)出料。 The traverse mechanism 62 includes a second conveying unit 621 and a traverse unit 622. The second conveying unit 621 includes a plurality of second conveying wheels 623 arranged at intervals along the first conveying direction D1. The second conveying wheels 623 are used to receive the load-bearing jig 2 output by the first conveying unit 611 and to transfer it. Output to the second conveying mechanism 52. The traverse unit 622 includes a guide rail 624, a sliding member 625, and a second driving assembly 626. The guide rail 624 has a long shape and its longitudinal direction extends in the left-right direction Y. The sliding member 625 is slidably connected to the guide rail 624 and can slide in the left-right direction Y, and the sliding member 625 is connected to the bottom end of the second conveying unit 621. The second driving assembly 626 is connected to the sliding member 625 to drive the sliding member 625 to slide in the left-right direction Y, so that the sliding member 625 can drive the second conveying unit 621 in a first position aligned with the first conveying unit 611 (as shown in FIG. 35), and move between a second position aligned with the rear end 521 of the feeding material (as shown in FIG. 38). When the second conveying unit 621 is at the first position, the second conveying unit 621 can receive the supporting fixture 2 output by the first conveying unit 611. When the second conveying unit 621 is in the second position, the second conveying unit 621 can convey the carried jig 2 to the second conveying mechanism 52. Thereby, the second conveying mechanism 52 can move the carrier jig 2 in the return zone 45 along the second conveying direction D2 (as shown in FIG. 10), and discharge the material through the discharge front end 522 (as shown in Fig. 10).

以下針對濕式處理設備300的處理方法進行說明:參閱圖36,本實施例的濕式處理設備300的濕式處理方法包含下述步驟:輸送步驟S1、濕潤步驟S2、蝕刻步驟S3、第一清洗步驟S4、去氧化步驟S5、第二清洗步驟S6、移除步驟S7、第三清洗步驟S8、中和步驟S9、第四清洗步驟S10、乾燥步驟S11、 移載步驟S12,以及回流步驟S13。 The following describes the processing method of the wet processing equipment 300: Referring to FIG. 36, the wet processing method of the wet processing equipment 300 of this embodiment includes the following steps: a conveying step S1, a wetting step S2, an etching step S3, a first Cleaning step S4, deoxidation step S5, second cleaning step S6, removal step S7, third cleaning step S8, neutralization step S9, fourth cleaning step S10, drying step S11, Transfer step S12, and reflow step S13.

參閱圖10及圖36,在輸送步驟S1中,先將多個承載治具2依序經由入料前端511入料至第一輸送機構51上,隨後,透過輸送裝置5的第一輸送機構51沿第一輸送方向D1輸送各承載治具2移動。 Referring to FIGS. 10 and 36, in the conveying step S1, a plurality of supporting fixtures 2 are first fed into the first conveying mechanism 51 through the feeding front end 511 in sequence, and then through the first conveying mechanism 51 of the conveying device 5. Each carrier jig 2 is conveyed to move along the first conveying direction D1.

參閱圖7、圖12及圖13,在濕潤步驟S2中,經由入料前端511入料至第一輸送機構51上的承載治具2會位在濕潤區31的入料段311。隨後,第一輸送機構51沿第一輸送方向D1將承載治具2輸送至濕潤段312並於其內移動。濕潤段312的下方噴灑件314朝上噴出的水310會經由承載盤21的通孔215噴至晶片1,而上方噴灑件314朝下噴出的水310則會經由蓋板23的第一開孔230及第二開孔235噴至晶片1。藉此,除了能預先清洗晶片1以將其上的灰塵或髒汙沖掉外,還能對晶片1的各引腳12(如圖6)及金屬保護層14產生濕潤作用,使晶片1在後續步驟中各引腳12及金屬保護層14與化學藥液的反應速度能變快。 Referring to FIG. 7, FIG. 12 and FIG. 13, in the wetting step S2, the carrier fixture 2 fed onto the first conveying mechanism 51 through the feeding front end 511 will be located in the feeding section 311 of the wetting zone 31. Subsequently, the first conveying mechanism 51 conveys the carrier jig 2 to the wetting section 312 along the first conveying direction D1 and moves therein. The water 310 sprayed upward from the lower spray member 314 of the wetting section 312 will be sprayed to the wafer 1 through the through hole 215 of the carrier plate 21, and the water 310 sprayed downward from the upper spray member 314 will be sprayed through the first opening of the cover 23 230 and the second opening 235 are sprayed to the wafer 1. In this way, in addition to pre-cleaning the chip 1 to wash away the dust or dirt on it, the pins 12 (as shown in FIG. 6) and the metal protective layer 14 of the chip 1 can also be wetted, so that the chip 1 is In the subsequent steps, the reaction speed of each pin 12 and the metal protective layer 14 with the chemical liquid can be increased.

參閱圖7、圖12及圖14,接著,第一輸送機構51沿第一輸送方向D1將承載治具2輸送至吹乾段313並於其內移動。首先,鄰近濕潤段312的下方噴氣頭315傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的水310由第一開孔230及第二開孔235排出。隨後,鄰近濕潤段312的上方噴氣頭315傾斜朝下 所噴出的氣體會將由第一開孔230及第二開孔235排出的水310刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的水310由通孔215排出,以對晶片1進行第一道吹乾作業。同理,遠離濕潤段312的另一對噴氣頭315也會依照前述方式對晶片1進行第二道吹乾作業。 Referring to FIGS. 7, 12 and 14, then, the first conveying mechanism 51 conveys the carrier jig 2 to the drying section 313 along the first conveying direction D1 and moves therein. Firstly, the gas jetted by the lower jet head 315 adjacent to the wetted section 312 tilts upwards will be jetted to the wafer 1 through the through hole 215 and drive the water 310 on the wafer 1 to be discharged from the first opening 230 and the second opening 235. Subsequently, the upper air jet 315 adjacent to the wetting section 312 is inclined downward The sprayed gas will scrape off the water 310 discharged from the first opening 230 and the second opening 235. At the same time, the gas will be sprayed to the wafer 1 through the first opening 230 and the second opening 235 and drive the wafer 1 The remaining water 310 is discharged from the through hole 215 to perform the first drying operation on the wafer 1. In the same way, another pair of air jets 315 far from the wetting section 312 will also perform the second drying operation on the wafer 1 in the aforementioned manner.

參閱圖7、圖8、圖9及圖14,另一方面,其中一個側噴氣嘴316沿著左噴氣方向D3所噴出的氣體會經由對應的側流道24噴至晶片1,而另一個側噴氣嘴316沿著右噴氣方向D4所噴出的氣體會經由對應的側流道24噴至晶片1,使氣體能帶動晶片1上的水310(如圖13)由通孔215或端流道25排出,以對晶片1進行第三道吹乾作業。藉此,能確保將各晶片1上的水310完全吹除,以避免晶片1上的水310帶到下一站的蝕刻區32進而影響或稀釋第一藥液325(如圖15)。 Referring to Figures 7, 8, 9 and 14, on the other hand, the gas ejected by one of the side jet nozzles 316 along the left jet direction D3 will be jetted to the wafer 1 through the corresponding side flow channel 24, and the other side The gas ejected by the jet nozzle 316 along the right jet direction D4 will be sprayed to the wafer 1 through the corresponding side flow channel 24, so that the gas can drive the water 310 on the wafer 1 (as shown in FIG. 13) through the through hole 215 or the end flow channel 25 It is discharged to perform the third drying operation on the wafer 1. In this way, it can be ensured that the water 310 on each wafer 1 is completely blown off, so as to prevent the water 310 on the wafer 1 from being carried to the etching area 32 of the next station to affect or dilute the first chemical solution 325 (as shown in FIG. 15).

參閱圖7、圖8、圖9及圖15,在蝕刻步驟S3中,第一輸送機構51帶動承載治具2經由蝕刻區32的分隔段321進入化學反應段322的第一藥液槽324內。承載治具2於第一藥液槽324內移動的過程中是完全浸泡在第一藥液325內。第一藥液325能經由通孔215、第一開孔230、第二開孔235、側流道24及端流道25流入承載治具2內的晶片1處。此外,下方第一藥液噴頭326朝上所噴出的第一藥液325會經由通孔215流至晶片1,而上方第一藥液噴頭326 朝下所噴出的第一藥液325會經由第一開孔230及第二開孔235流至晶片1,使得第一藥液325能在承載治具2內順暢地流動。藉此,第一藥液325能充分且確實地與晶片1的各引腳12(如圖6)或者是與晶片1因鋸切所產生的金屬絲產生化學反應並且蝕刻各引腳12或金屬絲,使得兩個相鄰的引腳12之間的距離能夠變大至一預設的長度,或者是將金屬絲移除,以防止晶片1在後續使用時因熱脹冷縮的因素造成金屬絲與另一相鄰引腳12接觸或者是兩個相鄰的引腳12相互接觸,進而導致短路的情形產生。 Referring to FIGS. 7, 8, 9 and 15, in the etching step S3, the first conveying mechanism 51 drives the carrier fixture 2 into the first chemical tank 324 of the chemical reaction section 322 through the partition section 321 of the etching zone 32 . The supporting jig 2 is completely immersed in the first liquid medicine 325 when moving in the first liquid medicine tank 324. The first liquid medicine 325 can flow into the wafer 1 in the carrier fixture 2 through the through hole 215, the first opening 230, the second opening 235, the side flow channel 24 and the end flow channel 25. In addition, the first chemical liquid 325 sprayed by the lower first chemical liquid spraying head 326 upwards will flow to the wafer 1 through the through hole 215, and the upper first chemical liquid spraying head 326 The first liquid medicine 325 sprayed downward will flow to the chip 1 through the first opening 230 and the second opening 235, so that the first liquid medicine 325 can flow smoothly in the supporting fixture 2. Thereby, the first chemical solution 325 can fully and reliably react with each pin 12 of the wafer 1 (as shown in FIG. 6) or with the wire generated by the sawing of the wafer 1 and etch each pin 12 or metal. Wire, so that the distance between two adjacent pins 12 can be increased to a preset length, or the wire is removed to prevent the chip 1 from expanding and contracting due to thermal expansion and contraction during subsequent use. The wire is in contact with another adjacent pin 12 or two adjacent pins 12 are in contact with each other, thereby causing a short circuit.

參閱圖7及圖15,接著,第一輸送機構51沿第一輸送方向D1將承載治具2輸送至吹乾段323並於其內移動。首先,鄰近化學反應段322的下方第一噴頭327傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的第一藥液325由第一開孔230及第二開孔235排出。隨後,鄰近化學反應段322的上方第一噴頭327傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的第一藥液325刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的第一藥液325由通孔215排出,以對晶片1進行第一道吹乾作業。同理,遠離化學反應段322的另一對第一噴頭327也會依照前述方式對晶片1進行第二道吹乾作業。 Referring to FIGS. 7 and 15, then, the first conveying mechanism 51 conveys the carrier jig 2 to the drying section 323 along the first conveying direction D1 and moves therein. First, the gas sprayed by the first spray head 327 tilted upward adjacent to the chemical reaction section 322 is sprayed to the wafer 1 through the through hole 215 and drives the first chemical solution 325 on the wafer 1 to pass through the first opening 230 and the second opening. The hole 235 is discharged. Subsequently, the gas sprayed by the first spray head 327 tilted downward adjacent to the chemical reaction section 322 will scrape off the first liquid medicine 325 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the first opening 230 and the second opening 235. An opening 230 and a second opening 235 are sprayed to the wafer 1 and drive the first chemical solution 325 on the wafer 1 to be discharged from the through hole 215 to perform the first drying operation on the wafer 1. In the same way, another pair of first spray heads 327 far from the chemical reaction section 322 will also perform the second drying operation on the wafer 1 in the aforementioned manner.

參閱圖7、圖8、圖9及圖17,另一方面,其中一個第一側噴嘴328沿著左噴氣方向D3所噴出的氣體會經由對應的側流道 24噴至晶片1,而另一個第一側噴嘴328沿著右噴氣方向D4所噴出的氣體會經由對應的側流道24噴至晶片1,使氣體能將晶片1上還殘留的第一藥液325(如圖16)由通孔215或端流道25排出,以對晶片1進行第三道吹乾作業。藉此,能確保將各晶片1上的第一藥液325完全吹除。 Referring to Figure 7, Figure 8, Figure 9 and Figure 17, on the other hand, the gas ejected by one of the first side nozzles 328 along the left jet direction D3 will pass through the corresponding side flow channel 24 is sprayed to wafer 1, and the gas sprayed by the other first side nozzle 328 along the right spray direction D4 will be sprayed to wafer 1 through the corresponding side flow channel 24, so that the gas can spray the remaining first drug on wafer 1 The liquid 325 (as shown in FIG. 16) is discharged from the through hole 215 or the end flow channel 25 to perform the third drying operation on the wafer 1. Thereby, it can be ensured that the first chemical liquid 325 on each wafer 1 is completely blown off.

參閱圖7及圖18,在第一清洗步驟S4中,第一輸送機構51帶動承載治具2先進入第一清洗區33的第一清洗段331內,第一清洗段331的下方第一噴水頭335朝上噴出的水337會經由通孔215噴至晶片1,而上方第一噴水頭335朝下噴出的水337則會經由第一開孔230及第二開孔235噴至晶片1,以對各晶片1進行第一道清洗,以洗掉各晶片1上已被吹乾的第一藥液325。接著,下方第一噴氣頭336傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的水337由第一開孔230及第二開孔235排出。隨後,上方第一噴氣頭336傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的水337刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的水337由通孔215排出,以吹乾晶片1。 Referring to Figures 7 and 18, in the first cleaning step S4, the first conveying mechanism 51 drives the carrier fixture 2 to first enter the first cleaning section 331 of the first cleaning zone 33, and the first cleaning section 331 is sprayed with first water. The water 337 sprayed upward by the head 335 will be sprayed to the wafer 1 through the through hole 215, and the water 337 sprayed downward by the upper first water spray head 335 will be sprayed to the wafer 1 through the first opening 230 and the second opening 235. The first cleaning is performed on each wafer 1 to wash off the first chemical solution 325 that has been blown dry on each wafer 1. Then, the gas ejected by the lower first jet head 336 tilted upward will be ejected to the wafer 1 through the through hole 215 and drive the water 337 on the wafer 1 to be discharged from the first opening 230 and the second opening 235. Subsequently, the gas ejected by the upper first jet head 336 tilted downward will scrape off the water 337 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the first opening 230 and the second opening. The hole 235 sprays to the wafer 1 and drives the water 337 on the wafer 1 to be discharged from the through hole 215 to dry the wafer 1.

之後,第一輸送機構51帶動承載治具2進入第二清洗段332的水槽338內。承載治具2於水槽338內移動的過程中是完全浸泡在水339內。水339能經由通孔215、第一開孔230、第二開孔 235、側流道24及端流道25流入承載治具2內的晶片1處。此外,下方第二噴水頭340朝上所噴出的水339會經由通孔215流至晶片1,而上方第二噴水頭340朝下所噴出的水339會經由第一開孔230及第二開孔235流至晶片1,使得水339能在承載治具2內順暢地流動,以對各晶片1進行第二道清洗。接著,下方第二噴氣頭341傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的水339由第一開孔230及第二開孔235排出。上方第二噴氣頭341傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的水339刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的水339由通孔215排出,以吹乾晶片1。 After that, the first conveying mechanism 51 drives the carrying jig 2 into the water tank 338 of the second cleaning section 332. The carrying jig 2 is completely immersed in the water 339 when moving in the water tank 338. Water 339 can pass through the through hole 215, the first opening 230, and the second opening 235. The side runner 24 and the end runner 25 flow into the wafer 1 in the carrier fixture 2. In addition, the water 339 sprayed by the lower second water spray head 340 upward will flow to the wafer 1 through the through hole 215, and the water 339 sprayed by the upper second water spray head 340 downward will pass through the first opening 230 and the second opening. The holes 235 flow to the wafer 1 so that the water 339 can flow smoothly in the carrier jig 2 to perform a second cleaning on each wafer 1. Then, the gas ejected by the lower second air jet head 341 tilted upward will be ejected to the wafer 1 through the through hole 215 and drive the water 339 on the wafer 1 to be discharged from the first opening 230 and the second opening 235. The gas ejected by the upper second jet head 341 tilted downward will scrape off the water 339 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the first opening 230 and the second opening 235 The water 339 sprayed to the wafer 1 and driven on the wafer 1 is discharged from the through hole 215 to dry the wafer 1.

第一輸送機構51接著帶動承載治具2進入第三清洗段333內。第三清洗段333的下方第一噴灑件342朝上噴出的水344會經由通孔215噴至晶片1,而上方第一噴灑件342朝下噴出的水344則會經由第一開孔230及第二開孔235噴至晶片1,以對各晶片1進行第三道清洗。接著,下方第三噴氣頭343傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的水344由第一開孔230及第二開孔235排出。上方第三噴氣頭343傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的水344刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的水344由通孔215排出,以吹乾晶片1。 The first conveying mechanism 51 then drives the carrier jig 2 into the third cleaning section 333. The water 344 sprayed upward from the lower first spray member 342 of the third cleaning section 333 is sprayed to the wafer 1 through the through hole 215, and the water 344 sprayed downward from the upper first spray member 342 is sprayed through the first opening 230 and The second opening 235 is sprayed to the wafer 1 to perform a third cleaning on each wafer 1. Then, the gas ejected by the lower third air jet head 343 tilted upward will be ejected to the wafer 1 through the through hole 215 and drive the water 344 on the wafer 1 to be discharged from the first opening 230 and the second opening 235. The gas ejected by the upper third jet head 343 tilted downward will scrape off the water 344 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the first opening 230 and the second opening 235 The water 344 sprayed on the wafer 1 and driven on the wafer 1 is discharged from the through hole 215 to dry the wafer 1.

參閱圖7、圖8、圖18及圖19,第一輸送機構51接著帶動承載治具2進入第四清洗段334內。第四清洗段334的下方第二噴灑件345朝上噴出的水348會經由通孔215噴至晶片1,而上方第二噴灑件345朝下噴出的水348則會經由第一開孔230及第二開孔235噴至晶片1,以對各晶片1進行第四道清洗。藉由第一清洗區33的四道清洗機制,能確保將各晶片1上殘留的第一藥液325完全洗淨去除,以避免晶片1上殘留的第一藥液325帶到下一站的去氧化區35進而影響第二藥液355(如圖20)。 Referring to FIGS. 7, 8, 18 and 19, the first conveying mechanism 51 then drives the carrier jig 2 into the fourth cleaning section 334. The water 348 sprayed upward from the lower second spray member 345 of the fourth cleaning section 334 will be sprayed to the wafer 1 through the through hole 215, and the water 348 sprayed downward from the upper second spray member 345 through the first opening 230 and The second opening 235 is sprayed to the wafer 1 to perform a fourth cleaning on each wafer 1. The four-channel cleaning mechanism of the first cleaning zone 33 can ensure that the first chemical solution 325 remaining on each wafer 1 is completely cleaned and removed, so as to prevent the first chemical solution 325 remaining on the wafer 1 from being carried to the next station. The deoxidation zone 35 in turn affects the second chemical solution 355 (see FIG. 20).

鄰近第二噴灑件345的下方第四噴氣頭346傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的水348由第一開孔230及第二開孔235排出。鄰近第二噴灑件345的上方第四噴氣頭346傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的水348刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的水348由通孔215排出,以對晶片1進行第一道吹乾作業。同理,遠離第二噴灑件345的另一對第四噴氣頭346也會依照前述方式對晶片1進行第二道吹乾作業。 The gas jetted by the fourth jet head 346 tilted upward and adjacent to the second spray member 345 will be jetted to the wafer 1 through the through hole 215 and drive the water 348 on the wafer 1 to be discharged from the first opening 230 and the second opening 235 . The gas sprayed by the fourth jet head 346 tilted downward adjacent to the second spray member 345 will scrape off the water 348 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the first opening The 230 and the second opening 235 are sprayed to the wafer 1 and drive the water 348 on the wafer 1 to be discharged from the through hole 215 to perform the first drying operation on the wafer 1. In the same way, another pair of fourth jet heads 346 far from the second spray member 345 will also perform the second drying operation on the wafer 1 in the aforementioned manner.

另一方面,其中一個側噴氣嘴347沿著左噴氣方向D3所噴出的氣體會經由對應的側流道24噴至晶片1,而另一個側噴氣嘴347沿著右噴氣方向D4所噴出的氣體會經由對應的側流道24噴至晶片1,使氣體能帶動晶片1上殘留的水348由通孔215或端流道 25排出,以對晶片1進行第三道吹乾作業。藉此,能確保將各晶片1上的水348完全吹除,以避免晶片1上殘留的水348帶到下一站的去氧化區35進而影響或稀釋第二藥液355。 On the other hand, the gas emitted by one of the side jet nozzles 347 along the left jet direction D3 will be jetted to the wafer 1 through the corresponding side flow channel 24, and the gas jetted by the other side jet nozzle 347 along the right jet direction D4 Will be sprayed to the wafer 1 through the corresponding side flow channel 24, so that the gas can drive the remaining water 348 on the wafer 1 through the through hole 215 or the end flow channel 25 is discharged to perform the third drying operation on the wafer 1. In this way, it can be ensured that the water 348 on each wafer 1 is completely blown off, so as to prevent the water 348 remaining on the wafer 1 from being carried to the deoxidation zone 35 of the next station, thereby affecting or diluting the second chemical solution 355.

參閱圖7、圖8、圖9及圖20,在去氧化步驟S5中,第一輸送機構51帶動承載治具2經由去氧化區35的分隔段351進入化學反應段352的第二藥液槽354內。承載治具2於第二藥液槽354內移動的過程中是完全浸泡在第二藥液355內。第二藥液355能經由通孔215、第一開孔230、第二開孔235、側流道24及端流道25流入承載治具2內的晶片1處。此外,下方第二藥液噴頭356朝上所噴出的第二藥液355會經由通孔215流至晶片1,而上方第二藥液噴頭356朝下所噴出的第二藥液355會經由第一開孔230及第二開孔235流至晶片1,使得第二藥液355能在承載治具2內順暢地流動。藉此,第二藥液355能充分且確實地與晶片1的各引腳12(如圖6)產生去氧化作用的化學反應。晶片1經過蝕刻步驟S3後,由於各引腳12與水和氣體接觸會產生局部氧化的狀況,因此,藉由第二藥液355與各引腳12產生去氧化作用,能將各引腳12鈍化為一氧化銅而構成一防護層,以防止各引腳12繼續氧化。 Referring to Figure 7, Figure 8, Figure 9 and Figure 20, in the deoxidation step S5, the first conveying mechanism 51 drives the carrier fixture 2 through the partition section 351 of the deoxidation zone 35 into the second chemical tank of the chemical reaction section 352 354 within. The supporting jig 2 is completely immersed in the second liquid medicine 355 when moving in the second liquid medicine tank 354. The second liquid medicine 355 can flow into the wafer 1 in the carrier fixture 2 through the through hole 215, the first opening 230, the second opening 235, the side flow channel 24 and the end flow channel 25. In addition, the second chemical liquid 355 sprayed by the lower second chemical liquid spraying head 356 upwards will flow to the chip 1 through the through hole 215, and the second chemical liquid 355 sprayed by the upper second chemical liquid spraying head 356 downwards will flow through the first An opening 230 and a second opening 235 flow to the chip 1 so that the second liquid medicine 355 can flow smoothly in the supporting fixture 2. Thereby, the second chemical solution 355 can sufficiently and reliably produce a deoxidation chemical reaction with each pin 12 of the chip 1 (as shown in FIG. 6). After the wafer 1 has undergone the etching step S3, since each pin 12 is in contact with water and gas, local oxidation will occur. Therefore, the second chemical solution 355 has a deoxidation effect on each pin 12, so that each pin 12 can be deoxidized. The passivation is copper oxide to form a protective layer to prevent the pins 12 from continuing to oxidize.

參閱圖7及圖20,接著,第一輸送機構51沿第一輸送方向D1將承載治具2輸送至吹乾段353並於其內移動。首先,鄰近化學反應段352的下方第二噴頭357傾斜朝上所噴出的氣體會經由通 孔215噴至晶片1並帶動晶片1上的第二藥液355由第一開孔230及第二開孔235排出。隨後,鄰近化學反應段352的上方第二噴頭357傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的第二藥液355刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的第二藥液355由通孔215排出,以對晶片1進行第一道吹乾作業。同理,遠離化學反應段352的另一對第二噴頭357也會依照前述方式對晶片1進行第二道吹乾作業。 Referring to FIG. 7 and FIG. 20, then, the first conveying mechanism 51 conveys the carrier jig 2 to the drying section 353 and moves in the first conveying direction D1. First, the gas sprayed by the second nozzle 357 that is adjacent to the lower part of the chemical reaction section 352 tilts upwards will pass through the The hole 215 sprays to the wafer 1 and drives the second chemical solution 355 on the wafer 1 to be discharged from the first opening 230 and the second opening 235. Subsequently, the gas sprayed by the second spray head 357 tilted downward adjacent to the upper part of the chemical reaction section 352 will scrape off the second liquid medicine 355 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the An opening 230 and a second opening 235 are sprayed to the wafer 1 and drive the second chemical solution 355 on the wafer 1 to be discharged from the through hole 215 to perform the first drying operation on the wafer 1. In the same way, another pair of second nozzles 357 far from the chemical reaction section 352 will also perform the second drying operation on the wafer 1 in the aforementioned manner.

參閱圖7、圖8、圖9及圖21,另一方面,其中一個第二側噴嘴358沿著左噴氣方向D3所噴出的氣體會經由對應的側流道24噴至晶片1,而另一個第二側噴嘴358沿著右噴氣方向D4所噴出的氣體會經由對應的側流道24噴至晶片1,使氣體能將晶片1上還殘留的第二藥液355由通孔215或端流道25排出,以對晶片1進行第三道吹乾作業。藉此,能確保將各晶片1上的第二藥液355完全吹除。 Referring to Figure 7, Figure 8, Figure 9 and Figure 21, on the other hand, the gas ejected by one of the second side nozzles 358 along the left ejection direction D3 will be ejected to the wafer 1 through the corresponding side flow channel 24, and the other The gas sprayed by the second side nozzle 358 along the right spray direction D4 will be sprayed to the wafer 1 through the corresponding side flow channel 24, so that the gas can flow the second chemical solution 355 remaining on the wafer 1 through the through hole 215 or the end. The lane 25 is discharged to perform the third drying operation on the wafer 1. Thereby, it can be ensured that the second chemical liquid 355 on each wafer 1 is completely blown off.

參閱圖7及圖22,在第二清洗步驟S6中,第一輸送機構51帶動承載治具2先進入第二清洗區36的第一清洗段361內,第一清洗段361的下方第一噴水頭364朝上噴出的水366會經由通孔215噴至晶片1,而上方第一噴水頭364朝下噴出的水366則會經由第一開孔230及第二開孔235噴至晶片1,以對各晶片1進行第一道清洗,以洗掉各晶片1上已被吹乾的第二藥液355。接著,下方第 一噴氣頭365傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的水366由第一開孔230及第二開孔235排出。隨後,上方第一噴氣頭365傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的水366刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的水366由通孔215排出,以吹乾晶片1。 Referring to Figures 7 and 22, in the second cleaning step S6, the first conveying mechanism 51 drives the carrier fixture 2 to first enter the first cleaning section 361 of the second cleaning zone 36, and the first cleaning section 361 is sprayed with first water below the first cleaning section 361 The water 366 sprayed upward by the head 364 will be sprayed to the wafer 1 through the through hole 215, and the water 366 sprayed downward by the upper first water spray head 364 will be sprayed to the wafer 1 through the first opening 230 and the second opening 235. The first cleaning is performed on each wafer 1 to wash off the second chemical solution 355 that has been blown dry on each wafer 1. Next, below The gas jetted by a jet head 365 tilted upward will be jetted to the wafer 1 through the through hole 215 and drive the water 366 on the wafer 1 to be discharged from the first opening 230 and the second opening 235. Subsequently, the gas ejected by the upper first jet head 365 tilted downward will scrape off the water 366 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the first opening 230 and the second opening. The hole 235 sprays to the wafer 1 and drives the water 366 on the wafer 1 to be discharged from the through hole 215 to dry the wafer 1.

之後,第一輸送機構51帶動承載治具2進入第二清洗段362的水槽367內。承載治具2於水槽367內移動的過程中是完全浸泡在水368內。水368能經由通孔215、第一開孔230、第二開孔235、側流道24及端流道25流入承載治具2內的晶片1處。此外,下方第二噴水頭369朝上所噴出的水368會經由通孔215流至晶片1,而上方第二噴水頭369朝下所噴出的水368會經由第一開孔230及第二開孔235流至晶片1,使得水368能在承載治具2內順暢地流動,以對各晶片1進行第二道清洗。接著,下方第二噴氣頭370傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的水368由第一開孔230及第二開孔235排出。上方第二噴氣頭370傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的水368刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的水368由通孔215排出,以吹乾晶片1。 After that, the first conveying mechanism 51 drives the carrying jig 2 into the water tank 367 of the second cleaning section 362. The carrying jig 2 is completely immersed in the water 368 when it moves in the water tank 367. The water 368 can flow into the wafer 1 in the carrier fixture 2 through the through hole 215, the first opening 230, the second opening 235, the side flow channel 24 and the end flow channel 25. In addition, the water 368 sprayed by the lower second water spray head 369 upwards will flow to the wafer 1 through the through hole 215, and the water 368 sprayed by the upper second water spray head 369 downwards will flow through the first opening 230 and the second opening. The holes 235 flow to the wafer 1 so that the water 368 can flow smoothly in the carrier jig 2 to perform a second cleaning on each wafer 1. Then, the gas ejected by the lower second air jet head 370 tilted upward will be ejected to the wafer 1 through the through hole 215 and drive the water 368 on the wafer 1 to be discharged from the first opening 230 and the second opening 235. The gas ejected by the upper second jet head 370 tilted downward will scrape off the water 368 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the first opening 230 and the second opening 235 The water 368 sprayed on the wafer 1 and driven on the wafer 1 is discharged from the through hole 215 to dry the wafer 1.

參閱圖7、圖8、圖9、圖22及圖23,第一輸送機構51 接著帶動承載治具2進入第三清洗段363內。第三清洗段363的下方噴灑件371朝上噴出的水374會經由通孔215噴至晶片1,而上方噴灑件371朝下噴出的水374則會經由第一開孔230及第二開孔235噴至晶片1,以對各晶片1進行第三道清洗。藉由第二清洗區36的三道清洗機制,能確保將各晶片1上殘留的第二藥液355完全洗淨去除,以避免晶片1上殘留的第二藥液355帶到下一站的移除區39進而影響第三藥液395(如圖24)。 Referring to Figure 7, Figure 8, Figure 9, Figure 22 and Figure 23, the first conveying mechanism 51 Then drive the carrying jig 2 into the third cleaning section 363. The water 374 sprayed upward from the lower spray member 371 of the third cleaning section 363 is sprayed to the wafer 1 through the through hole 215, and the water 374 sprayed downward from the upper spray member 371 is sprayed through the first opening 230 and the second opening. 235 sprayed to wafer 1 to perform the third cleaning of each wafer 1. The three cleaning mechanisms in the second cleaning zone 36 can ensure that the second chemical solution 355 remaining on each wafer 1 is completely cleaned and removed, so as to prevent the second chemical solution 355 remaining on the wafer 1 from being carried to the next station. The removal area 39 in turn affects the third liquid medicine 395 (Figure 24).

鄰近噴灑件371的下方第三噴氣頭372傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的水374由第一開孔230及第二開孔235排出。鄰近噴灑件371的上方第三噴氣頭372傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的水374刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的水374由通孔215排出,以對晶片1進行第一道吹乾作業。同理,遠離噴灑件371的另一對第三噴氣頭372也會依照前述方式對晶片1進行第二道吹乾作業。 The gas ejected by the third air jet head 372 tilted upward and adjacent to the spray member 371 is sprayed to the wafer 1 through the through hole 215 and drives the water 374 on the wafer 1 to be discharged from the first opening 230 and the second opening 235. The gas sprayed by the third jet head 372 tilted downward adjacent to the spraying member 371 will scrape off the water 374 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the first opening 230 and The second opening 235 sprays to the wafer 1 and drives the water 374 on the wafer 1 to be discharged from the through hole 215 to perform the first drying operation on the wafer 1. In the same way, another pair of third air jet heads 372 far from the spraying element 371 will also perform the second drying operation on the wafer 1 in the aforementioned manner.

最後,其中一個側噴氣嘴373沿著左噴氣方向D3所噴出的氣體會經由對應的側流道24噴至晶片1,而另一個側噴氣嘴373沿著右噴氣方向D4所噴出的氣體會經由對應的側流道24噴至晶片1,使氣體能帶動晶片1上殘留的水374由通孔215或端流道25排出,以對晶片1進行第三道吹乾作業。藉此,能確保將各晶片1 上的水374完全吹除,以避免晶片1上殘留的水374帶到下一站的移除區39進而影響或稀釋第三藥液395。 Finally, the gas emitted by one of the side jet nozzles 373 along the left jet direction D3 will be jetted to the wafer 1 through the corresponding side flow channel 24, and the gas jetted by the other side jet nozzle 373 along the right jet direction D4 will pass through The corresponding side flow channel 24 is sprayed to the wafer 1 so that the gas can drive the remaining water 374 on the wafer 1 to be discharged from the through hole 215 or the end flow channel 25 to perform the third drying operation on the wafer 1. In this way, it can ensure that each chip 1 The upper water 374 is completely blown off to prevent the remaining water 374 on the wafer 1 from being carried to the removal area 39 of the next station to affect or dilute the third chemical solution 395.

參閱圖10及圖11,第一輸送機構51接著會帶動承載治具2進入檢查區38內,工作人員可通過控制第一輸送機構51停止運轉,以將承載治具2取出並檢查各晶片1的引腳12的蝕刻狀況。 10 and 11, the first conveying mechanism 51 will then drive the carrier jig 2 into the inspection area 38, and the staff can stop the operation by controlling the first conveying mechanism 51 to take out the carrier jig 2 and inspect each wafer 1 The etching status of pin 12.

參閱圖7、圖8、圖9及圖24,在移除步驟S7中,第一輸送機構51帶動承載治具2經由移除區39的分隔段391進入化學反應段392的第三藥液槽394內。承載治具2於第三藥液槽394內移動的過程中是完全浸泡在第三藥液395內。第三藥液395能經由通孔215、第一開孔230、第二開孔235、側流道24及端流道25流入承載治具2內的晶片1處。此外,下方第三藥液噴頭396朝上所噴出的第三藥液395會經由通孔215流至晶片1,而上方第三藥液噴頭396朝下所噴出的第三藥液395會經由第一開孔230及第二開孔235流至晶片1,使得第三藥液395能在承載治具2內順暢地流動。藉此,第三藥液395能充分且確實地與晶片1的金屬保護層14產生化學反應以去除金屬保護層14,也就是說,移除步驟S7是剝除金屬保護層14的剝銀步驟。 Referring to FIGS. 7, 8, 9 and 24, in the removal step S7, the first conveying mechanism 51 drives the carrier fixture 2 to enter the third chemical tank of the chemical reaction section 392 through the partition section 391 of the removal zone 39 394. The supporting jig 2 is completely immersed in the third liquid medicine 395 when moving in the third liquid medicine tank 394. The third liquid medicine 395 can flow into the wafer 1 in the carrier fixture 2 through the through hole 215, the first opening 230, the second opening 235, the side flow channel 24 and the end flow channel 25. In addition, the third chemical liquid 395 sprayed by the lower third chemical liquid spraying head 396 upwards will flow to the wafer 1 through the through hole 215, and the third chemical liquid 395 sprayed downwards by the upper third chemical liquid spraying head 396 will flow through the first An opening 230 and a second opening 235 flow to the chip 1 so that the third liquid medicine 395 can flow smoothly in the supporting fixture 2. Thereby, the third chemical solution 395 can sufficiently and reliably produce a chemical reaction with the metal protective layer 14 of the wafer 1 to remove the metal protective layer 14. That is, the removal step S7 is a silver stripping step of stripping off the metal protective layer 14. .

參閱圖7及圖24,接著,第一輸送機構51沿第一輸送方向D1將承載治具2輸送至吹乾段393並於其內移動。首先,鄰近化學反應段392的下方第三噴頭397傾斜朝上所噴出的氣體會經由通 孔215噴至晶片1並帶動晶片1上的第三藥液395由第一開孔230及第二開孔235排出。隨後,鄰近化學反應段392的上方第三噴頭397傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的第三藥液395刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的第三藥液395由通孔215排出,以對晶片1進行第一道吹乾作業。同理,遠離化學反應段322的另一對第三藥液395也會依照前述方式對晶片1進行第二道吹乾作業。 Referring to FIGS. 7 and 24, then, the first conveying mechanism 51 conveys the carrier jig 2 to the drying section 393 along the first conveying direction D1 and moves therein. First of all, the gas sprayed by the third nozzle 397 at the bottom adjacent to the chemical reaction section 392 tilts upwards will pass through the The hole 215 is sprayed to the wafer 1 and drives the third chemical solution 395 on the wafer 1 to be discharged from the first opening 230 and the second opening 235. Subsequently, the gas sprayed by the third spray head 397 tilted downward adjacent to the chemical reaction section 392 will scrape off the third liquid medicine 395 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the first opening 230 and the second opening 235. An opening 230 and a second opening 235 are sprayed to the wafer 1 and drive the third liquid 395 on the wafer 1 to be discharged from the through hole 215 to perform the first drying operation on the wafer 1. In the same way, another pair of third chemical solutions 395 far from the chemical reaction section 322 will also perform the second drying operation on the wafer 1 in the aforementioned manner.

參閱圖7、圖8、圖9及圖25,另一方面,其中一個第三側噴嘴398沿著左噴氣方向D3所噴出的氣體會經由對應的側流道24噴至晶片1,而另一個第三側噴嘴398沿著右噴氣方向D4所噴出的氣體會經由對應的側流道24噴至晶片1,使氣體能將晶片1上還殘留的第三藥液395由通孔215或端流道25排出,以對晶片1進行第三道吹乾作業。藉此,能確保將各晶片1上的第三藥液395完全吹除。 Referring to Figures 7, 8, 9 and 25, on the other hand, the gas ejected by one of the third side nozzles 398 along the left air ejection direction D3 will be ejected to the wafer 1 through the corresponding side flow channel 24, and the other The gas sprayed by the third side nozzle 398 along the right spray direction D4 will be sprayed to the wafer 1 through the corresponding side flow channel 24, so that the gas can flow the third chemical solution 395 remaining on the wafer 1 through the through hole 215 or the end. The lane 25 is discharged to perform the third drying operation on the wafer 1. Thereby, it can be ensured that the third chemical liquid 395 on each wafer 1 is completely blown off.

參閱圖7及圖26,在第三清洗步驟S8中,第一輸送機構51帶動承載治具2先進入第三清洗區40的第一清洗段401內,第一清洗段401的下方第一噴水頭403朝上噴出的水405會經由通孔215噴至晶片1,而上方第一噴水頭403朝下噴出的水366則會經由第一開孔230及第二開孔235噴至晶片1,以對各晶片1進行第一道清洗,以洗掉各晶片1上已被吹乾的第三藥液395。接著,下方第 一噴氣頭404傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的水405由第一開孔230及第二開孔235排出。隨後,上方第一噴氣頭404傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的水405刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的水405由通孔215排出,以吹乾晶片1。 Referring to Figures 7 and 26, in the third cleaning step S8, the first conveying mechanism 51 drives the carrier fixture 2 to first enter the first cleaning section 401 of the third cleaning zone 40, and the first cleaning section 401 is sprayed with water first. The water 405 sprayed upward by the head 403 will be sprayed to the wafer 1 through the through hole 215, and the water 366 sprayed downward by the upper first water spray head 403 will be sprayed to the wafer 1 through the first opening 230 and the second opening 235. The first cleaning is performed on each wafer 1 to wash off the third chemical solution 395 that has been blown dry on each wafer 1. Next, below The gas ejected by an air jet 404 tilted upward will be ejected to the wafer 1 through the through hole 215 and drive the water 405 on the wafer 1 to be discharged from the first opening 230 and the second opening 235. Subsequently, the gas ejected by the upper first jet head 404 tilted downward will scrape off the water 405 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the first opening 230 and the second opening. The hole 235 sprays to the wafer 1 and drives the water 405 on the wafer 1 to be discharged from the through hole 215 to dry the wafer 1.

參閱圖7、圖8、圖9、圖26及圖27,第一輸送機構51接著帶動承載治具2進入第二清洗段402內。第二清洗段402的下方噴灑件406朝上噴出的水409會經由通孔215噴至晶片1,而上方噴灑件406朝下噴出的水409則會經由第一開孔230及第二開孔235噴至晶片1,以對各晶片1進行第二道清洗。藉由第三清洗區40的兩道清洗機制,能確保將各晶片1上殘留的第三藥液395完全洗淨去除,以避免晶片1上殘留的第三藥液395帶到下一站的中和區41進而影響第四藥液415(如圖28)。 Referring to FIGS. 7, 8, 9, 26 and 27, the first conveying mechanism 51 then drives the carrier jig 2 into the second cleaning section 402. The water 409 sprayed upward from the lower spray member 406 of the second cleaning section 402 will be sprayed to the wafer 1 through the through hole 215, while the water 409 sprayed downward from the upper spray member 406 will be sprayed through the first opening 230 and the second opening. 235 is sprayed to wafer 1 to perform a second cleaning on each wafer 1. The two cleaning mechanisms in the third cleaning zone 40 can ensure that the third chemical solution 395 remaining on each wafer 1 is completely cleaned and removed, so as to prevent the third chemical solution 395 remaining on the wafer 1 from being carried to the next station. The neutralization zone 41 in turn affects the fourth liquid medicine 415 (Figure 28).

鄰近噴灑件406的下方第二噴氣頭407傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的水409由第一開孔230及第二開孔235排出。鄰近噴灑件406的上方第二噴氣頭407傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的水409刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的水409由通孔215排出,以對晶片1進行 第一道吹乾作業。同理,遠離噴灑件406的另一對第二噴氣頭407也會依照前述方式對晶片1進行第二道吹乾作業。 The gas jetted by the second jet head 407 slanting upwards adjacent to the spraying member 406 will be jetted to the wafer 1 through the through hole 215 and drive the water 409 on the wafer 1 to be discharged from the first opening 230 and the second opening 235. The gas sprayed by the second jet head 407 tilted downward adjacent to the spray member 406 will scrape off the water 409 discharged from the first opening 230 and the second opening 235. At the same time, the gas will also pass through the first opening 230 and The second opening 235 sprays to the wafer 1 and drives the water 409 on the wafer 1 to be discharged from the through hole 215 to perform the The first drying operation. In the same way, another pair of second air jets 407 away from the spraying element 406 will also perform the second drying operation on the wafer 1 in the aforementioned manner.

最後,其中一個側噴氣嘴408沿著左噴氣方向D3所噴出的氣體會經由對應的側流道24噴至晶片1,而另一個側噴氣嘴408沿著右噴氣方向D4所噴出的氣體會經由對應的側流道24噴至晶片1,使氣體能帶動晶片1上殘留的水374由通孔215或端流道25排出,以對晶片1進行第三道吹乾作業。藉此,能確保將各晶片1上的水409完全吹除,以避免晶片1上殘留的水409帶到下一站的中和區41進而影響或稀釋第四藥液415。 Finally, the gas emitted by one of the side jet nozzles 408 along the left jet direction D3 will be jetted to the wafer 1 through the corresponding side flow channel 24, and the gas jetted by the other side jet nozzle 408 along the right jet direction D4 will pass through The corresponding side flow channel 24 is sprayed to the wafer 1 so that the gas can drive the remaining water 374 on the wafer 1 to be discharged from the through hole 215 or the end flow channel 25 to perform the third drying operation on the wafer 1. In this way, it can be ensured that the water 409 on each wafer 1 is completely blown off, so as to prevent the water 409 remaining on the wafer 1 from being carried to the neutralization zone 41 of the next station, thereby affecting or diluting the fourth chemical solution 415.

參閱圖7、圖8、圖9及圖28,在中和步驟S9中,第一輸送機構51帶動承載治具2經由中和區41的分隔段411進入化學反應段412的第四藥液槽414內。承載治具2於第四藥液槽414內移動的過程中是完全浸泡在第四藥液415內。第四藥液415能經由通孔215、第一開孔230、第二開孔235、側流道24及端流道25流入承載治具2內的晶片1處。此外,下方第四藥液噴頭416朝上所噴出的第四藥液415會經由通孔215流至晶片1,而上方第四藥液噴頭416朝下所噴出的第四藥液415會經由第一開孔230及第二開孔235流至晶片1,使得第四藥液415能在承載治具2內順暢地流動。藉此,第四藥液415能充分且確實地與晶片1的金屬導熱層13產生化學中和反應,以中和去除金屬導熱層13上所形成的氧化物。 Referring to Figure 7, Figure 8, Figure 9 and Figure 28, in the neutralization step S9, the first conveying mechanism 51 drives the carrier fixture 2 through the partition section 411 of the neutralization zone 41 into the fourth chemical tank of the chemical reaction section 412 414 within. The supporting jig 2 is completely immersed in the fourth liquid medicine 415 while moving in the fourth liquid medicine tank 414. The fourth liquid medicine 415 can flow into the wafer 1 in the carrier fixture 2 through the through hole 215, the first opening 230, the second opening 235, the side flow channel 24 and the end flow channel 25. In addition, the fourth chemical liquid 415 sprayed by the lower fourth chemical liquid spraying head 416 upwards will flow to the chip 1 through the through hole 215, and the fourth chemical liquid 415 sprayed by the upper fourth chemical liquid spraying head 416 downwards will flow through the first An opening 230 and a second opening 235 flow to the chip 1 so that the fourth liquid medicine 415 can flow smoothly in the supporting fixture 2. Thereby, the fourth chemical solution 415 can sufficiently and reliably generate a chemical neutralization reaction with the metal thermally conductive layer 13 of the wafer 1 to neutralize and remove the oxide formed on the metal thermally conductive layer 13.

參閱圖7及圖28,接著,第一輸送機構51沿第一輸送方向D1將承載治具2輸送至吹乾段413並於其內移動。首先,鄰近化學反應段412的下方第四噴頭417傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的第四藥液415由第一開孔230及第二開孔235排出。隨後,鄰近化學反應段412的上方第四噴頭417傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的第四藥液415刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的第四藥液415由通孔215排出,以對晶片1進行第一道吹乾作業。同理,遠離化學反應段412的另一對第四藥液415也會依照前述方式對晶片1進行第二道吹乾作業。 Referring to FIGS. 7 and 28, then, the first conveying mechanism 51 conveys the carrier jig 2 to the drying section 413 along the first conveying direction D1 and moves therein. First, the gas ejected by the fourth spray head 417 tilted upward adjacent to the chemical reaction section 412 will be sprayed to the wafer 1 through the through hole 215 and drive the fourth chemical solution 415 on the wafer 1 through the first opening 230 and the second opening. The hole 235 is discharged. Subsequently, the gas ejected by the fourth nozzle 417 tilted downward adjacent to the chemical reaction section 412 will scrape off the fourth chemical liquid 415 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the first opening 230 and the second opening 235. An opening 230 and a second opening 235 are sprayed to the wafer 1 and drive the fourth chemical solution 415 on the wafer 1 to be discharged from the through hole 215 to perform the first drying operation on the wafer 1. In the same way, another pair of fourth chemical solutions 415 far from the chemical reaction section 412 will also perform the second drying operation on the wafer 1 in the aforementioned manner.

參閱圖7、圖8、圖9及圖29,最後,其中一個第四側噴嘴418沿著左噴氣方向D3所噴出的氣體會經由對應的側流道24噴至晶片1,而另一個第四側噴嘴418沿著右噴氣方向D4所噴出的氣體會經由對應的側流道24噴至晶片1,使氣體能將晶片1上還殘留的第四藥液415由通孔215或端流道25排出,以對晶片1進行第三道吹乾作業。藉此,能確保將各晶片1上的第四藥液415完全吹除。 Referring to Figures 7, 8, 9, and 29, finally, the gas ejected by one of the fourth side nozzles 418 along the left jet direction D3 will be ejected to the wafer 1 through the corresponding side flow channel 24, and the other fourth side nozzle 418 will be ejected to the wafer 1 through the corresponding side flow channel 24. The gas ejected by the side nozzle 418 along the right jet direction D4 will be sprayed to the wafer 1 through the corresponding side flow channel 24, so that the gas can transfer the fourth chemical solution 415 remaining on the wafer 1 through the through hole 215 or the end flow channel 25. It is discharged to perform the third drying operation on the wafer 1. Thereby, it can be ensured that the fourth chemical solution 415 on each wafer 1 is completely blown off.

參閱圖7及圖30,在第四清洗步驟S10中,第一輸送機構51帶動承載治具2先進入第四清洗區42的第一清洗段421內,第一清洗段421的下方第一噴水頭424朝上噴出的水426會經由通孔215噴至晶片1,而上方第一噴水頭424朝下噴出的水426則會經由 第一開孔230及第二開孔235噴至晶片1,以對各晶片1進行第一道清洗,以洗掉各晶片1上已被吹乾的第四藥液415。接著,下方第一噴氣頭425傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的水426由第一開孔230及第二開孔235排出。隨後,上方第一噴氣頭425傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的水426刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的水426由通孔215排出,以吹乾晶片1。 Referring to FIGS. 7 and 30, in the fourth cleaning step S10, the first conveying mechanism 51 drives the carrier jig 2 to enter the first cleaning section 421 of the fourth cleaning zone 42 first, and the first cleaning section 421 is sprayed with water first. The water 426 sprayed upward by the head 424 will be sprayed to the wafer 1 through the through hole 215, and the water 426 sprayed downward by the upper first water spray head 424 will be sprayed through The first opening 230 and the second opening 235 are sprayed to the wafer 1 to perform a first cleaning on each wafer 1 to wash off the fourth chemical solution 415 that has been blown dry on each wafer 1. Then, the gas ejected by the lower first jet head 425 tilted upward will be ejected to the wafer 1 through the through hole 215 and drive the water 426 on the wafer 1 to be discharged from the first opening 230 and the second opening 235. Subsequently, the gas ejected by the upper first jet head 425 tilted downward will scrape off the water 426 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the first opening 230 and the second opening. The hole 235 sprays to the wafer 1 and drives the water 426 on the wafer 1 to be discharged from the through hole 215 to dry the wafer 1.

之後,第一輸送機構51帶動承載治具2進入第二清洗段422的水槽427內。承載治具2於水槽427內移動的過程中是完全浸泡在水428內。水428能經由通孔215、第一開孔230、第二開孔235、側流道24及端流道25流入承載治具2內的晶片1處。此外,下方第二噴水頭429朝上所噴出的水428會經由通孔215流至晶片1,而上方第二噴水頭429朝下所噴出的水428會經由第一開孔230及第二開孔235流至晶片1,使得水428能在承載治具2內順暢地流動,以對各晶片1進行第二道清洗。接著,下方第二噴氣頭430傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的水428由第一開孔230及第二開孔235排出。上方第二噴氣頭430傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的水428刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶 片1並帶動晶片1上的水428由通孔215排出,以吹乾晶片1。 After that, the first conveying mechanism 51 drives the carrying jig 2 into the water tank 427 of the second cleaning section 422. The carrying jig 2 is completely immersed in the water 428 when moving in the water tank 427. The water 428 can flow into the wafer 1 in the carrier fixture 2 through the through hole 215, the first opening 230, the second opening 235, the side flow channel 24 and the end flow channel 25. In addition, the water 428 sprayed by the lower second water spray head 429 upwards will flow to the wafer 1 through the through hole 215, and the water 428 sprayed by the upper second water spray head 429 downwards will flow through the first opening 230 and the second opening. The holes 235 flow to the wafer 1 so that the water 428 can flow smoothly in the carrier jig 2 to perform a second cleaning on each wafer 1. Then, the gas ejected by the lower second air jet head 430 tilted upward will be ejected to the wafer 1 through the through hole 215 and drive the water 428 on the wafer 1 to be discharged from the first opening 230 and the second opening 235. The gas ejected by the upper second jet head 430 tilted downward will scrape off the water 428 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the first opening 230 and the second opening 235 Spray to crystal The wafer 1 drives the water 428 on the wafer 1 to be discharged from the through hole 215 to dry the wafer 1.

參閱圖7、圖8、圖30及圖31,第一輸送機構51接著帶動承載治具2進入第三清洗段423內。第三清洗段423的下方噴灑件431朝上噴出的水434會經由通孔215噴至晶片1,而上方噴灑件431朝下噴出的水434則會經由第一開孔230及第二開孔235噴至晶片1,以對各晶片1進行第三道清洗。藉由第四清洗區42的三道清洗機制,能確保將各晶片1上殘留的第四藥液415完全洗淨去除。 Referring to FIGS. 7, 8, 30 and 31, the first conveying mechanism 51 then drives the carrier jig 2 into the third cleaning section 423. The water 434 sprayed upward from the lower spray member 431 of the third cleaning section 423 is sprayed to the wafer 1 through the through hole 215, and the water 434 sprayed downward from the upper spray member 431 is sprayed through the first opening 230 and the second opening. 235 sprayed to wafer 1 to perform the third cleaning of each wafer 1. The three cleaning mechanisms in the fourth cleaning zone 42 can ensure that the fourth chemical solution 415 remaining on each wafer 1 is completely cleaned and removed.

鄰近噴灑件431的下方第三噴氣頭432傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的水434由第一開孔230及第二開孔235排出。鄰近噴灑件431的上方第三噴氣頭432傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的水434刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的水434由通孔215排出,以對晶片1進行第一道吹乾作業。同理,遠離噴灑件431的另一對第三噴氣頭432也會依照前述方式對晶片1進行第二道吹乾作業。 The gas jetted by the third jet head 432 from the lower side adjacent to the spraying member 431 tilts upwards will be jetted to the wafer 1 through the through hole 215 and drive the water 434 on the wafer 1 to be discharged from the first opening 230 and the second opening 235. The gas sprayed by the third spray head 432 above the spraying element 431 inclining downward will scrape off the water 434 discharged from the first opening 230 and the second opening 235. At the same time, the gas will also pass through the first opening 230 and The second opening 235 sprays to the wafer 1 and drives the water 434 on the wafer 1 to be discharged from the through hole 215 to perform the first drying operation on the wafer 1. In the same way, another pair of third air jets 432 far from the spraying member 431 will also perform the second drying operation on the wafer 1 in the aforementioned manner.

最後,其中一個側噴氣嘴433沿著左噴氣方向D3所噴出的氣體會經由對應的側流道24噴至晶片1,而另一個側噴氣嘴433沿著右噴氣方向D4所噴出的氣體會經由對應的側流道24噴至晶片1,使氣體能帶動晶片1上殘留的水434由通孔215或端流道25排出,以對晶片1進行第三道吹乾作業。藉此,能確保將各晶片1 上的水434完全吹除。 Finally, the gas emitted by one of the side jet nozzles 433 along the left jet direction D3 will be jetted to the wafer 1 through the corresponding side flow channel 24, and the gas jetted by the other side jet nozzle 433 along the right jet direction D4 will pass through The corresponding side flow channel 24 is sprayed to the wafer 1 so that the gas can drive the remaining water 434 on the wafer 1 to be discharged from the through hole 215 or the end flow channel 25 to perform the third drying operation on the wafer 1. In this way, it can ensure that each chip 1 The water 434 on it was completely blown away.

參閱圖7及圖32,在乾燥步驟S11,第一輸送機構51帶動承載治具2先進入乾燥區44的吹乾段441內,位在下方的各第一吹風件443朝上所噴出的氣體會經由通孔215噴至晶片1,而位在上方的各第一吹風件443朝下所噴出的氣體會經由第一開孔230及第二開孔235噴至晶片1。由於第一吹風件443所吹出的壓縮風的溫度是例如等於或小於60℃,因此,能先將各晶片1吹乾。 Referring to Figures 7 and 32, in the drying step S11, the first conveying mechanism 51 drives the carrier fixture 2 to enter the drying section 441 of the drying zone 44 first, and the first blowing members 443 below are sprayed upward. It will be sprayed to the wafer 1 through the through hole 215, and the gas sprayed downward from each of the first blowing members 443 located above will be sprayed to the wafer 1 through the first opening 230 and the second opening 235. Since the temperature of the compressed air blown by the first blowing member 443 is, for example, 60° C. or less, each wafer 1 can be dried first.

第一輸送機構51接著帶動承載治具2進入烘乾段442內,位在下方的各第二吹風件444朝上所噴出的氣體會經由通孔215噴至晶片1,而位在上方的各第二吹風件444朝下所噴出的氣體會經由第一開孔230及第二開孔235噴至晶片1。由於第二吹風件444所吹出的壓縮風的溫度是例如介於85~90℃,因此,能先將各晶片1烘乾。 The first conveying mechanism 51 then drives the carrier jig 2 into the drying section 442, and the gas sprayed upward by the second blowing members 444 located below will be sprayed to the wafer 1 through the through holes 215, and the upper portion The gas sprayed downward by the second blowing member 444 will be sprayed to the wafer 1 through the first opening 230 and the second opening 235. Since the temperature of the compressed air blown by the second blowing member 444 is, for example, 85-90° C., each wafer 1 can be dried first.

參閱圖37及圖38,在移載步驟S12中,第一輸送機構51帶動承載治具2經由出料後端512出料並進入暫存機構61的第一輸送單元611上,隨後,第一輸送單元611的第一輸送輪613會沿第一輸送方向D1輸送承載治具2至橫移機構62的第二輸送單元621上。接著,第二驅動總成626透過滑動件625(如圖35)帶動第二輸送單元621由圖38所示的第一位置移動到圖39所示的第二位置,使第二輸送單元621對齊第二輸送機構52。 Referring to FIGS. 37 and 38, in the transfer step S12, the first conveying mechanism 51 drives the carrying jig 2 to discharge through the discharge rear end 512 and enter the first conveying unit 611 of the temporary storage mechanism 61, and then, the first The first conveying wheel 613 of the conveying unit 611 will convey the supporting jig 2 to the second conveying unit 621 of the traverse mechanism 62 along the first conveying direction D1. Next, the second driving assembly 626 drives the second conveying unit 621 through the sliding member 625 (as shown in Fig. 35) to move from the first position shown in Fig. 38 to the second position shown in Fig. 39, so that the second conveying unit 621 is aligned. The second conveying mechanism 52.

參閱圖34及圖37,需說明的是,若橫移機構62發生故障而無法作動時,第一輸送單元611的第一輸送輪613便不會沿第一輸送方向D1輸送承載治具2移動。此時,升降單元612的第一驅動總成617驅動滑動架615沿上下方向Z向上移動一段距離,使得一對承托桿616能將位在第一輸送輪613上的承載治具2往上抬升而移離第一輸送輪613。藉此,以容許下一個由出料後端512出料的承載治具2能移動到第一輸送單元611上,使另一對承托桿616能透過前述方式將位在第一輸送輪613上的承載治具2往上抬升而移離第一輸送輪613。藉此,以達到暫存承載治具2的作用。當橫移機構62修復後,升降單元612的第一驅動總成617驅動滑動架615沿上下方向Z向下移動一段距離,使得一對承托桿616能將所承托承載治具2放置回第一輸送輪613上。接著,第一輸送輪613便能輸送承載治具2至第二輸送單元621上。 Referring to FIGS. 34 and 37, it should be noted that if the traverse mechanism 62 fails to operate, the first conveying wheel 613 of the first conveying unit 611 will not move along the first conveying direction D1 to convey the carrier jig 2 . At this time, the first driving assembly 617 of the lifting unit 612 drives the sliding frame 615 to move up a certain distance in the up and down direction Z, so that the pair of supporting rods 616 can move the supporting fixture 2 on the first conveying wheel 613 upward. Lift and move away from the first conveying wheel 613. Thereby, to allow the next carrying jig 2 discharged from the discharge rear end 512 to be moved to the first conveying unit 611, the other pair of supporting rods 616 can be positioned on the first conveying wheel 613 in the aforementioned manner. The upper supporting jig 2 is lifted upward to move away from the first conveying wheel 613. In this way, the function of temporarily storing the bearing fixture 2 is achieved. After the traverse mechanism 62 is repaired, the first drive assembly 617 of the lifting unit 612 drives the sliding frame 615 to move down a distance in the up and down direction Z, so that the pair of supporting rods 616 can place the supporting fixture 2 back On the first conveying wheel 613. Then, the first conveying wheel 613 can convey the supporting fixture 2 to the second conveying unit 621.

參閱圖10及圖38,在回流步驟S13中,在第二位置的第二輸送單元621的第二輸送輪623會沿第二輸送方向D2輸送承載治具2移動,使承載治具2經由入料後端521入料至第二輸送機構52。隨後,第二輸送機構52便能沿第二輸送方向D2輸送承載治具2移動,使承載治具2經由出料前端522出料。藉此,在機體3的前端301便能同時處理承載治具2的入料及出料作業,能節省工人人員的配置數量及人力成本。 10 and 38, in the reflow step S13, the second conveying wheel 623 of the second conveying unit 621 in the second position moves along the second conveying direction D2 to convey the carrier jig 2 so that the carrier jig 2 passes through The rear end 521 of the material is fed to the second conveying mechanism 52. Subsequently, the second conveying mechanism 52 can move the carrier jig 2 along the second conveying direction D2, so that the carrier jig 2 is discharged through the discharge front end 522. Thereby, at the front end 301 of the machine body 3, the loading and unloading operations of the carrying jig 2 can be processed at the same time, which can save the number of workers and personnel and labor costs.

參閱圖2及圖11,在本實施例的另一實施態樣中,若各晶片1不具有金屬保護層14,則濕式處理設備300的濕式處理方法的步驟中可省略移除步驟S7、第三清洗步驟S8、中和步驟S9及第四清洗步驟S10,也就是使濕式處理設備300的移除區39、一第三清洗區40、一中和區41及第四清洗區42停止運作。亦即濕式處理設備300可以隨著晶片1的形式而選擇執行或停止移除步驟S7(即剝銀步驟)、第三清洗步驟S8、中和步驟S9,及第四清洗步驟S10,使得濕式處理設備300在使用上非常有彈性,以滿足使用者的需求。 2 and FIG. 11, in another implementation aspect of this embodiment, if each wafer 1 does not have the metal protective layer 14, the removing step S7 can be omitted in the step of the wet processing method of the wet processing equipment 300 , The third cleaning step S8, the neutralization step S9, and the fourth cleaning step S10, that is, the removal area 39, a third cleaning area 40, a neutralization area 41, and a fourth cleaning area 42 of the wet processing equipment 300 Stop operation. That is, the wet processing equipment 300 can choose to execute or stop the removal step S7 (ie the silver stripping step), the third cleaning step S8, the neutralization step S9, and the fourth cleaning step S10 according to the form of the wafer 1, so that the wet The modular processing device 300 is very flexible in use to meet the needs of users.

參閱圖20及圖22,在本實施例的另一實施態樣中,隨著去氧化區35所採用的第二藥液355的特性不同,使得在前述製程中可以省略第二清洗步驟S6,也就是說不用開啟第二清洗區36。藉此,使得濕式處理設備300可以依照去氧化區35所採用的第二藥液355的特性而彈性地調整控制是否開啟使用第二清洗區36。前述操作方式不會對蝕刻步驟S3及第一清洗步驟S4造成影響,使得濕式處理設備300仍能確實地對晶片1進行微蝕刻的作業。 Referring to FIGS. 20 and 22, in another implementation aspect of this embodiment, as the characteristics of the second chemical solution 355 used in the deoxidation zone 35 are different, the second cleaning step S6 can be omitted in the foregoing manufacturing process. That is to say, the second cleaning zone 36 does not need to be opened. In this way, the wet processing equipment 300 can flexibly adjust and control whether to open the second cleaning area 36 according to the characteristics of the second chemical liquid 355 used in the deoxidation zone 35. The foregoing operation method will not affect the etching step S3 and the first cleaning step S4, so that the wet processing equipment 300 can still perform the micro-etching operation on the wafer 1 reliably.

參閱圖7,藉由濕式處理設備300搭配專屬的承載治具2(簡稱Boat或Carrier)設計,使得晶片1可以選擇性地將第一面111朝下供各承載片223所承載,或者是將第二面112朝下供各承載片223所承載。藉此,能提升使用上的彈性以滿足使用上的需求,並能提升處理晶片1的品質。 Referring to FIG. 7, the wet processing equipment 300 is matched with a dedicated carrier fixture 2 (Boat or Carrier for short) design, so that the chip 1 can selectively carry the first surface 111 downwards for the carrier sheets 223 to carry, or The second surface 112 faces downward for the supporting sheets 223 to carry. In this way, the flexibility in use can be improved to meet the needs of use, and the quality of the processed wafer 1 can be improved.

綜上所述,本實施例的濕式處理設備300,藉由蝕刻區32的第一藥液325能充分且確實地與晶片1的各引腳12或者是與晶片1因鋸切所產生的金屬絲產生化學反應並且蝕刻各引腳12或金屬絲,使得兩個相鄰的引腳12之間的距離能夠變大至預設的長度,或者是將金屬絲移除,以防止晶片1在後續使用時因熱脹冷縮的因素造成金屬絲與另一相鄰引腳12接觸或者是兩個相鄰的引腳12相互接觸,進而導致短路的情形產生,故確實能達成本發明之目的。 In summary, the wet processing equipment 300 of the present embodiment can fully and reliably interact with the pins 12 of the chip 1 or the chips 1 produced by sawing by the first chemical solution 325 in the etching zone 32. The metal wire generates a chemical reaction and etches each pin 12 or metal wire, so that the distance between two adjacent pins 12 can be increased to a preset length, or the metal wire is removed to prevent the wafer 1 from being In the subsequent use, due to thermal expansion and contraction, the metal wire contacts another adjacent pin 12 or two adjacent pins 12 contact each other, thereby causing a short circuit, so it can indeed achieve the purpose of the invention. .

惟以上所述者,僅為本發明之實施例而已,當不能以此限定本發明實施之範圍,凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。 However, the above are only examples of the present invention. When the scope of implementation of the present invention cannot be limited by this, all simple equivalent changes and modifications made in accordance with the scope of the patent application of the present invention and the content of the patent specification still belong to This invention patent covers the scope.

2:承載治具 2: Bearing fixture

300:濕式處理設備 300: Wet processing equipment

3:機體 3: body

301:前端 301: front end

302:後端 302: backend

31:濕潤區 31: Humid zone

32:蝕刻區 32: Etching area

33:第一清洗區 33: The first cleaning area

35:去氧化區 35: Deoxidation zone

36:第二清洗區 36: Second cleaning area

38:檢查區 38: Inspection area

39:移除區 39: Remove area

40:第三清洗區 40: Third cleaning area

41:中和區 41: Zhonghe District

42:第四清洗區 42: The fourth cleaning area

44:乾燥區 44: Dry zone

45:回流區 45: Recirculation zone

5:輸送裝置 5: Conveying device

51:第一輸送機構 51: The first conveying mechanism

511:入料前端 511: Feeding front end

512:出料後端 512: Discharge back end

52:第二輸送機構 52: The second conveying mechanism

521:入料後端 521: Feeding back end

522:出料前端 522: Discharge front end

6:移載裝置 6: Transfer device

D1:第一輸送方向 D1: The first conveying direction

D2:第二輸送方向 D2: Second conveying direction

X:前後方向 X: front and rear direction

Y:左右方向 Y: left and right direction

Claims (26)

一種濕式處理設備,適於對一承載治具所承載的多個晶片進行加工處理,該濕式處理設備包含:一輸送裝置,可沿一第一輸送方向輸送該承載治具移動;一蝕刻區,具有用以供該輸送裝置所輸送的該承載治具浸泡以蝕刻各該晶片的多個引腳的第一藥液;一第一清洗區,位於該蝕刻區下游側用以清洗經由該蝕刻區輸出的該承載治具上的該等晶片;一去氧化區,位於該第一清洗區下游側,並具有用以供該輸送裝置所輸送的該承載治具浸泡以對各該晶片的該等引腳產生去氧化反應的第二藥液;及一第二清洗區,位於該去氧化區下游側用以清洗經由該去氧化區輸出的該承載治具上的該等晶片該蝕刻區形成一用以供該承載治具穿過並容置有該第一藥液的第一藥液槽,該蝕刻區包括位於該第一藥液槽下游側的兩個第一噴頭及兩個第一側噴嘴,該兩第一噴頭沿一垂直於該第一輸送方向的上下方向相間隔,用以對該承載治具上的該等晶片噴氣以移除該第一藥液,該兩第一側噴嘴沿一垂直於該上下方向的左右方向相間隔,用以對該承載治具上的該等晶片側向噴氣以移除該第一藥液。 A wet processing equipment is suitable for processing a plurality of wafers carried by a carrier jig. The wet processing equipment includes: a conveying device capable of transporting the carrier jig to move along a first conveying direction; and an etching Zone, with a first chemical solution for immersing the carrier fixture conveyed by the conveying device to etch the pins of each wafer; a first cleaning zone located on the downstream side of the etching zone for cleaning through the The wafers on the carrier jig output from the etching zone; a deoxidation zone is located on the downstream side of the first cleaning zone, and has a deoxidation zone for the carrier jig conveyed by the conveying device to soak in order to immerse each of the wafers The pins generate a second chemical solution for deoxidation reaction; and a second cleaning zone located on the downstream side of the deoxidation zone for cleaning the wafers and the etching zone on the carrier fixture output through the deoxidation zone A first liquid bath for the carrier jig to pass through and accommodating the first liquid medicine is formed, and the etching area includes two first spray heads and two second spray heads located on the downstream side of the first liquid bath. One side nozzle, the two first spray heads are spaced apart along a vertical direction perpendicular to the first conveying direction, and are used to spray the wafers on the carrier jig to remove the first chemical liquid. The side nozzles are spaced apart along a left and right direction perpendicular to the up and down direction, and are used to spray the wafers on the supporting fixture laterally to remove the first liquid medicine. 如請求項1所述的濕式處理設備,其中,該蝕刻區還包括多個設置於該第一藥液槽內的第一藥液噴頭,該等第 一藥液噴頭中的一部分朝上對該等晶片噴出水刀形式的該第一藥液,而另一部分朝下對該等晶片噴出水刀形式的該第一藥液,該兩第一側噴嘴其中之一是沿一左噴氣方向對該等晶片噴氣,而其中另一是沿一相反於該左噴氣方向的右噴氣方向對該等晶片噴氣。 The wet processing equipment according to claim 1, wherein the etching zone further includes a plurality of first chemical liquid spraying heads arranged in the first chemical liquid tank, and the first chemical liquid spraying heads are arranged in the first chemical liquid tank. One part of a chemical liquid spray head sprays the first chemical liquid in the form of a water jet to the wafers upwards, and the other part sprays the first chemical liquid in the form of a water jet to the wafers downwards, the two first side nozzles One of them is to jet the wafers in a left jet direction, and the other of them is to jet the wafers in a right jet direction opposite to the left jet direction. 如請求項1所述的濕式處理設備,其中,該第一清洗區包括一第一清洗段,及一位於該第一清洗段下游側的第二清洗段,該第一清洗段包含兩個沿一垂直於該第一輸送方向的上下方向相間隔的第一噴水頭,及兩個沿該上下方向相間隔且位於該兩第一噴水頭下游側的第一噴氣頭,該兩第一噴水頭用以對該等晶片噴出水刀形式的水,該第一噴氣頭用以對該等晶片噴氣以移除該水,該第二清洗段形成有一水槽,該水槽容置有用以清洗該等晶片的該水,該第二清洗段包含兩個沿該上下方向相間隔的第二噴水頭,及兩個沿該上下方向相間隔且位於該兩第二噴水頭下游側的第二噴氣頭,該兩第二噴水頭用以對該等晶片噴出水刀形式的該水,該兩第二噴氣頭用以對該等晶片噴氣以移除該水。 The wet processing equipment according to claim 1, wherein the first cleaning zone includes a first cleaning section and a second cleaning section located on the downstream side of the first cleaning section, and the first cleaning section includes two First water jets spaced apart along a vertical direction perpendicular to the first conveying direction, and two first air jets spaced along the up and down direction and located on the downstream side of the two first water jets, the two first water jets The head is used to spray water in the form of a water jet to the wafers, the first spray head is used to spray the wafers to remove the water, the second cleaning section forms a water tank, and the water tank contains a water tank for cleaning the wafers. The water of the wafer, the second cleaning section includes two second water jets spaced apart along the up and down direction, and two second air jets spaced along the up and down direction and located on the downstream side of the two second water jets, The two second water jets are used for spraying the water in the form of water jets on the wafers, and the two second air jets are used for jetting the wafers to remove the water. 如請求項3所述的濕式處理設備,其中,該第一清洗區還包括一位於該第二清洗段下游側的第三清洗段,該第三清洗段包含多對沿該第一輸送方向相間隔排列的第一噴灑件,及兩個沿該上下方向相間隔且位於該等第一噴灑件下游側的第三噴氣頭,每一該對的兩個第一噴灑件沿該上下方向相間隔用以對該等晶片噴灑該水,該兩 第三噴氣頭用以對該等晶片噴氣以移除該水。 The wet processing equipment according to claim 3, wherein the first cleaning zone further includes a third cleaning section located on the downstream side of the second cleaning section, and the third cleaning section includes a plurality of pairs along the first conveying direction. First spraying elements arranged at intervals, and two third spray heads spaced apart along the up and down direction and located on the downstream side of the first spraying elements, the two first spraying elements of each pair are opposite to each other along the up and down direction The interval is used to spray the water on the wafers, the two The third jet head is used to jet the wafers to remove the water. 如請求項4所述的濕式處理設備,其中,該第一清洗區包括一位於該第三清洗段下游側的第四清洗段,該第四清洗段包含多對沿該第一輸送方向相間隔排列的第二噴灑件、兩個沿該上下方向相間隔且位於該等第二噴灑件下游側的第四噴氣頭,及兩個位於該等第二噴灑件下游側的側噴氣嘴,每一該對的兩個第二噴灑件沿該上下方向相間隔用以對該等晶片噴灑該水,該兩第四噴氣頭用以對該等晶片噴氣以移除該水,該兩側噴氣嘴一垂直於該上下方向的左右方向相間隔,用以對該第一輸送機構所輸送的該承載治具上的該等晶片側向噴氣以移除該水,該兩側噴氣嘴其中之一是沿一左噴氣方向對該等晶片噴氣,而其中另一是沿一相反於該左噴氣方向的右噴氣方向對該等晶片噴氣。 The wet processing equipment according to claim 4, wherein the first cleaning zone includes a fourth cleaning section located on the downstream side of the third cleaning section, and the fourth cleaning section includes a plurality of pairs of phases along the first conveying direction. The second spraying elements arranged at intervals, two fourth air jets spaced along the vertical direction and located on the downstream side of the second spraying elements, and two side air jets located on the downstream side of the second spraying elements, each A pair of two second spraying members are spaced apart along the up and down direction for spraying the water on the wafers, the two fourth air jets are used for jetting the wafers to remove the water, and the two side air nozzles A left-right direction perpendicular to the up-down direction is spaced apart for removing the water by air jetting the wafers on the carrier jig conveyed by the first conveying mechanism. One of the air jet nozzles on both sides is The wafers are jetted in a left jet direction, and the other is jetted toward the wafers in a right jet direction opposite to the left jet direction. 如請求項1所述的濕式處理設備,其中,該去氧化區形成一用以供該承載治具穿過並容置有該第二藥液的第二藥液槽,該去氧化區包括位於該第二藥液槽下游側的兩個第二噴頭及兩個第二側噴嘴,該兩第二噴頭沿該上下方向相間隔用以對該等晶片噴氣以移除該第二藥液,該兩第二側噴嘴沿該左右方向相間隔用以對該等晶片側向噴氣以移除該第二藥液。 The wet processing equipment according to claim 1, wherein the deoxidation zone forms a second chemical liquid tank for passing the supporting jig and accommodating the second chemical liquid, and the deoxidation zone includes Two second spray heads and two second side nozzles located on the downstream side of the second chemical liquid tank, the two second spray heads are spaced apart in the up and down direction for jetting the wafers to remove the second chemical liquid, The two second-side nozzles are spaced apart along the left and right direction to spray the wafers laterally to remove the second chemical liquid. 如請求項6所述的濕式處理設備,其中,該去氧化區還包括多個設置於該第二藥液槽內的第二藥液噴頭,該等第二藥液噴頭中的一部分朝上對該等晶片噴出水刀形 式的該第二藥液,而另一部分朝下對該等晶片噴出水刀形式的該第二藥液,該兩第二側噴嘴其中之一是沿一左噴氣方向對該等晶片噴氣,而其中另一是沿一相反於該左噴氣方向的右噴氣方向對該等晶片噴氣。 The wet processing equipment according to claim 6, wherein the deoxidation zone further comprises a plurality of second liquid chemical spray heads arranged in the second liquid chemical tank, and a part of the second chemical liquid spray heads faces upward Spray water jet shape on these wafers The second chemical liquid of the formula, and the other part sprays the second chemical liquid in the form of a water jet to the wafers downwards, one of the two second side nozzles sprays the wafers along a left air jet direction, and The other is to jet the wafers in a right jet direction opposite to the left jet direction. 如請求項1所述的濕式處理設備,其中,該第二清洗區包括一第一清洗段,及一位於該第一清洗段下游側的第二清洗段,該第一清洗段包含兩個沿沿一垂直於該第一輸送方向的上下方向相間隔的第一噴水頭,及兩個沿該上下方向相間隔且位於該兩第一噴水頭下游側的第一噴氣頭,該兩第一噴水頭用以對該等晶片噴出水刀形式的水,該第一噴氣頭用以對該等晶片噴氣以移除該水,該第二清洗段形成有一水槽,該水槽容置有用以清洗該等晶片的該水,該第二清洗段包含兩個沿該上下方向相間隔的第二噴水頭,及兩個沿該上下方向相間隔且位於該兩第二噴水頭下游側的第二噴氣頭,該兩第二噴水頭用以對該等晶片噴出水刀形式的該水,該兩第二噴氣頭用以對該等晶片噴氣以移除該水。 The wet processing equipment according to claim 1, wherein the second cleaning zone includes a first cleaning section and a second cleaning section located on the downstream side of the first cleaning section, and the first cleaning section includes two First water jets spaced along a vertical direction perpendicular to the first conveying direction, and two first air jets spaced along the up-down direction and located on the downstream side of the two first water jets, the two first water jets The water spray head is used to spray water in the form of a water jet to the wafers, the first spray head is used to spray the wafers to remove the water, the second cleaning section forms a water tank, and the water tank contains a water tank for cleaning the wafers. Waiting for the water of the wafer, the second cleaning section includes two second water jets spaced along the up and down direction, and two second air jets spaced along the up and down direction and located on the downstream side of the two second water jets The two second water spray heads are used to spray the water in the form of water jets to the wafers, and the two second spray heads are used to spray water to the wafers to remove the water. 如請求項8所述的濕式處理設備,其中,該第二清洗區還包括一位於該第二清洗段下游側的第三清洗段,該第三清洗段包含多對沿該第一輸送方向相間隔排列的噴灑件、兩個沿該上下方向相間隔且位於該等噴灑件下游側的第三噴氣頭,及兩個沿該上下方向相間隔且位於該等噴灑件下游側的側噴氣嘴,每一該對的兩個噴灑件沿該上下方向相間隔用以對該等晶片噴灑該水,該兩第三 噴氣頭用以對該等晶片噴氣以移除該水,該兩側噴氣嘴沿一垂直於該上下方向的左右方向相間隔,用以對該第一輸送機構所輸送的該承載治具上的該等晶片側向噴氣以移除該水,該兩側噴氣嘴其中之一是沿一左噴氣方向對該等晶片噴氣,而其中另一是沿一相反於該左噴氣方向的右噴氣方向對該等晶片噴氣。 The wet processing equipment according to claim 8, wherein the second cleaning zone further includes a third cleaning section located on the downstream side of the second cleaning section, and the third cleaning section includes a plurality of pairs along the first conveying direction. Spraying elements arranged at intervals, two third air jets spaced along the vertical direction and located on the downstream side of the spraying elements, and two side air jets spaced apart along the vertical direction and located on the downstream side of the spraying elements , The two spraying members of each pair are spaced along the up and down direction for spraying the water on the wafers, the two third The air jet head is used to air jet the wafers to remove the water, and the air jet nozzles on both sides are spaced apart in a left and right direction perpendicular to the up and down direction for the first transport mechanism to transport the carrier fixture on the The wafers are jetted laterally to remove the water, one of the two side jet nozzles jets the wafers in a left jet direction, and the other of them jets in a right jet direction opposite to the left jet direction. These chips are jetted. 如請求項6所述的濕式處理設備,其中,各該晶片具有一金屬導熱層,及一形成於該金屬導熱層的金屬保護層,該濕式處理設備還包含一位於該第二清洗區下游側的移除區,及一位於該移除區下游側的第三清洗區,該移除區形成一用以供該承載治具穿過的第三藥液槽,該第三藥液槽容置有用以供該等晶片浸泡以去除各該晶片的該金屬保護層的第三藥液,該移除區包括位於該第三藥液槽下游側的兩個第三噴頭及兩個第三側噴嘴,該兩第三噴頭沿該上下方向相間隔用以對該等晶片噴氣以移除該第三藥液,該兩第三側噴嘴沿該左右方向相間隔用以對該等晶片側向噴氣以移除該第三藥液,該第三清洗區用以清洗經由該移除區輸出的該承載治具上的該等晶片。 The wet processing equipment according to claim 6, wherein each of the wafers has a metal thermally conductive layer and a metal protective layer formed on the metal thermally conductive layer, and the wet processing equipment further includes a second cleaning zone A removal zone on the downstream side, and a third cleaning zone located on the downstream side of the removal zone. The removal zone forms a third liquid tank for the carrying jig to pass through, the third liquid tank A third chemical solution used for immersing the wafers to remove the metal protective layer of each of the wafers is contained, and the removal area includes two third spray heads and two third spray heads located on the downstream side of the third chemical solution tank. Side nozzles, the two third spray heads are spaced in the up and down direction for jetting the wafers to remove the third chemical solution, and the two third side nozzles are spaced in the left and right direction for laterally facing the wafers Air jets to remove the third chemical solution, and the third cleaning area is used to clean the wafers on the carrier fixture output through the removal area. 如請求項10所述的濕式處理設備,其中,該移除區還包括多個設置於該第三藥液槽內的第三藥液噴頭,該等第三藥液噴頭中的一部分朝上對該等晶片噴出水刀形式的該第三藥液,而另一部分朝下對該等晶片噴出水刀形式的該第三藥液,該兩第三側噴嘴其中之一是沿一左噴 氣方向對該等晶片噴氣,而其中另一是沿一相反於該左噴氣方向的右噴氣方向對該等晶片噴氣。 The wet processing equipment according to claim 10, wherein the removal area further includes a plurality of third liquid medicine spray heads arranged in the third liquid medicine tank, and a part of the third liquid medicine spray heads faces upward The third chemical liquid in the form of a water jet is sprayed on the wafers, and the third chemical liquid in the form of a water jet is sprayed on the wafers with the other part downwards. One of the two third side nozzles is sprayed along a left side. The direction of gas jets the wafers, and the other is jets of the wafers in a right jet direction opposite to the left jet direction. 如請求項10所述的濕式處理設備,其中,該第三清洗區包括一第一清洗段,及一位於該第一清洗段下游側的第二清洗段,該第一清洗段包含兩個沿該上下方向相間隔的第一噴水頭,及兩個沿該上下方向相間隔且位於該兩第一噴水頭下游側的第一噴氣頭,該兩第一噴水頭用以對該等晶片噴出水刀形式的水,該第一噴氣頭用以對該等晶片噴氣以移除該水,該第二清洗段包含多對沿該第一輸送方向相間隔排列的噴灑件、兩個沿該上下方向相間隔且位於該等噴灑件下游側的第二噴氣頭,及兩個沿該上下方向相間隔且位於該等噴灑件下游側的側噴氣嘴,每一該對的兩個噴灑件沿該上下方向相間隔用以對該等晶片噴灑該水,該兩第二噴氣頭用以對該等晶片噴氣以移除該水,該兩側噴氣嘴沿該左右方向相間隔,用以對該第一輸送機構所輸送的該承載治具上的該等晶片側向噴氣以移除該水,該兩側噴氣嘴其中之一是沿一左噴氣方向對該等晶片噴氣,而其中另一是沿一相反於該左噴氣方向的右噴氣方向對該等晶片噴氣。 The wet processing equipment according to claim 10, wherein the third cleaning zone includes a first cleaning section and a second cleaning section located on the downstream side of the first cleaning section, and the first cleaning section includes two The first water jets spaced apart along the up and down direction, and two first jet heads spaced along the up and down direction and located on the downstream side of the two first water jets, the two first water jets are used to spray the wafers Water jet in the form of water, the first jet head is used to jet the wafers to remove the water, the second cleaning section includes a plurality of pairs of spraying elements arranged at intervals along the first conveying direction, two along the top and bottom The second air nozzles spaced apart in the direction and located on the downstream side of the spraying elements, and two side air nozzles spaced along the up-and-down direction and located on the downstream side of the spraying elements, the two spraying elements of each pair are along the The upper and lower directions are spaced apart to spray the water on the wafers, the two second air jets are used to jet the wafers to remove the water, and the two air jet nozzles are spaced apart along the left and right directions to spray the water on the wafers. The wafers on the carrier jig conveyed by a conveying mechanism are jetted laterally to remove the water. One of the two air jet nozzles jets the wafers along a left jet direction, and the other jets air jets along a left jet direction. A right jet direction opposite to the left jet direction jets the wafers. 如請求項10所述的濕式處理設備,還包含一位於該第三清洗區下游側的中和區,及一位於該中和區下游側的第四清洗區,該中和區形成一用以供該承載治具穿過的第四藥液槽,該第四藥液槽容置有用以供該等晶片浸泡以中和去除各該晶片的該金屬導熱層上所形成的氧化物 的第四藥液,該中和區包括位於該第四藥液槽下游側的兩個第四噴頭及兩個第四側噴嘴,該兩第四噴頭沿該上下方向相間隔用以對該等晶片噴氣以移除該第四藥液,該兩第四側噴嘴沿該左右方向相間隔用以對該等晶片側向噴氣以移除該第四藥液,該第四清洗區用以清洗經由該中和區輸出的該承載治具上的該等晶片。 The wet processing equipment according to claim 10, further comprising a neutralization zone located on the downstream side of the third cleaning zone, and a fourth cleaning zone located on the downstream side of the neutralization zone, the neutralization zone forming a The fourth chemical liquid tank for the carrier jig to pass through, and the fourth chemical liquid tank is used for immersing the wafers to neutralize and remove the oxide formed on the metal thermally conductive layer of each of the wafers The neutralization zone includes two fourth spray heads and two fourth side nozzles located on the downstream side of the fourth liquid tank, and the two fourth spray heads are spaced apart along the up and down direction for matching the The wafer jets are used to remove the fourth chemical solution, the two fourth side nozzles are spaced apart in the left and right direction for laterally jetting the wafers to remove the fourth chemical solution, and the fourth cleaning area is used to clean through The chips on the carrier fixture output from the neutralization zone. 如請求項13所述的濕式處理設備,其中,該中和區還包括多個設置於該第四藥液槽內的第四藥液噴頭,該等第四藥液噴頭中的一部分朝上對該等晶片噴出水刀形式的該第四藥液,而另一部分朝下對該等晶片噴出水刀形式的該第四藥液,該兩第四側噴嘴其中之一是沿一左噴氣方向對該等晶片噴氣,而其中另一是沿一相反於該左噴氣方向的右噴氣方向對該等晶片噴氣。 The wet processing equipment according to claim 13, wherein the neutralization zone further includes a plurality of fourth chemical liquid spray heads arranged in the fourth chemical liquid tank, and a part of the fourth chemical liquid spray heads faces upward The fourth chemical liquid in the form of a water jet is sprayed on the wafers, and the fourth chemical liquid in the form of a water jet is sprayed on the wafers with the other part downward, one of the two fourth side nozzles is along a left jet direction The wafers are air-jetted, and the other is air-jetting the wafers in a right air-jet direction opposite to the left air-jet direction. 如請求項13所述的濕式處理設備,其中,該第四清洗區包括一第一清洗段,及一位於該第一清洗段下游側的第二清洗段,該第一清洗段包含兩個沿該上下方向相間隔的第一噴水頭,及兩個沿該上下方向相間隔且位於該兩第一噴水頭下游側的第一噴氣頭,該兩第一噴水頭用以對該等晶片噴出水刀形式的水,該第一噴氣頭用以對該等晶片噴氣以移除該水,該第二清洗段形成有一水槽,該水槽容置有用以清洗該等晶片的該水,該第二清洗段包含兩個沿該上下方向相間隔的第二噴水頭,及兩個沿該上下方向相間隔且位於該兩第二噴水頭下游側的第二噴氣頭,該兩第二噴水頭用以對該等晶片噴出水刀形 式的該水,該兩第二噴氣頭用以對該等晶片噴氣以移除該水。 The wet processing equipment according to claim 13, wherein the fourth cleaning zone includes a first cleaning section and a second cleaning section located on the downstream side of the first cleaning section, and the first cleaning section includes two The first water jets spaced apart along the up and down direction, and two first jet heads spaced along the up and down direction and located on the downstream side of the two first water jets, the two first water jets are used to spray the wafers Water jet in the form of water, the first jet head is used to jet the wafers to remove the water, the second cleaning section forms a water tank containing the water for cleaning the wafers, the second The cleaning section includes two second water jets spaced along the up and down direction, and two second air jets spaced along the up and down direction and located on the downstream side of the two second water jets. The two second water jets are used for Spray water jet shape on these wafers The two second air jets are used for jetting the wafers to remove the water. 如請求項15所述的濕式處理設備,其中,該第四清洗區還包括一位於該第二清洗段下游側的第三清洗段,該第三清洗段包含多對沿該第一輸送方向相間隔排列的噴灑件、兩個沿該上下方向相間隔且位於該等噴灑件下游側的第三噴氣頭,及兩個沿該上下方向相間隔且位於該等噴灑件下游側的側噴氣嘴,每一該對的兩個噴灑件沿該上下方向相間隔用以對該等晶片噴灑該水,該兩第三噴氣頭用以對該等晶片噴氣以移除該水,該兩側噴氣嘴沿該左右方向相間隔,用以對該第一輸送機構所輸送的該承載治具上的該等晶片側向噴氣以移除該水,該兩側噴氣嘴其中之一是沿一左噴氣方向對該等晶片噴氣,而其中另一是沿一相反於該左噴氣方向的右噴氣方向對該等晶片噴氣。 The wet processing equipment according to claim 15, wherein the fourth cleaning zone further includes a third cleaning section located on the downstream side of the second cleaning section, and the third cleaning section includes a plurality of pairs along the first conveying direction. Spraying elements arranged at intervals, two third air jets spaced along the vertical direction and located on the downstream side of the spraying elements, and two side air jets spaced apart along the vertical direction and located on the downstream side of the spraying elements , The two spraying members of each pair are spaced along the up and down direction for spraying the water on the wafers, the two third air jets are used for air jets on the wafers to remove the water, and the two air jets Spaced along the left and right directions for the wafers on the carrier fixture conveyed by the first conveying mechanism to be sprayed laterally to remove the water, and one of the air nozzles on both sides is along a left spraying direction The wafers are air-jetted, and the other is air-jetting the wafers in a right air-jet direction opposite to the left air-jet direction. 如請求項13所述的濕式處理設備,還包含一位於該蝕刻區上游側的濕潤區,及一位於該第四清洗區下游側的乾燥區,該濕潤區用以濕潤該輸送裝置所輸送的該承載治具上的該等晶片,該乾燥區透過吹熱風乾燥該等晶片。 The wet processing equipment according to claim 13, further comprising a wetting zone located on the upstream side of the etching zone, and a drying zone located on the downstream side of the fourth cleaning zone, the wet zone being used for wetting the conveyed by the conveying device For the wafers on the carrier fixture, the drying zone is used to dry the wafers by blowing hot air. 如請求項1所述的濕式處理設備,還包含一位於該蝕刻區上游側的濕潤區,及一位於該第二清洗區下游側的乾燥區,該濕潤區用以濕潤該輸送裝置所輸送的該承載治具上的該等晶片,該乾燥區透過吹熱風乾燥該等晶片。 The wet processing equipment according to claim 1, further comprising a wetting zone located on the upstream side of the etching zone, and a drying zone located on the downstream side of the second cleaning zone, the wet zone being used for wetting the conveyed by the conveying device For the wafers on the carrier fixture, the drying zone is used to dry the wafers by blowing hot air. 如請求項17或18所述的濕式處理設備,其中,該輸送裝 置包括一第一輸送機構,及一沿該左右方向與該第一輸送機構相間隔的第二輸送機構,該第一輸送機構可沿該第一輸送方向輸送該承載治具移動,並具有一位於該濕潤區的入料前端,及一位於該乾燥區的出料後端,該第二輸送機構可沿一相反於該第一輸送方向的第二輸送方向輸送該承載治具移動,並具有一鄰近該出料後端的入料後端,及一鄰近於該入料前端的出料前端,該濕式處理設備還包含一移載裝置,該移載裝置包括一位於該乾燥區下游側的暫存機構,及一位於該暫存機構下游側的橫移機構,該暫存機構包括一第一輸送單元,及一升降單元,該第一輸送單元對應於該出料後端用以承接由該出料後端所輸出的該承載治具,該升降單元包含多對沿該上下方向相間隔排列的承托桿,各該對承托桿能沿該上下方向升降且用以承托該第一輸送單元上的該承載治具,該橫移機構包括一第二輸送單元,及一橫移單元,該橫移單元用以驅動該第二輸送單元沿該左右方向在一對齊於該第一輸送單元的第一位置,及一對齊於該入料後端的第二位置之間移動,當該第二輸送單元在該第一位置時,該第二輸送單元能承接由該第一輸送單元所輸出的該承載治具,當該第二輸送單元在該第二位置時,該第二輸送單元能將承接的該承載治具輸送至該第二輸送機構。 The wet processing equipment according to claim 17 or 18, wherein the conveying device The device includes a first conveying mechanism, and a second conveying mechanism spaced apart from the first conveying mechanism along the left and right direction. The first conveying mechanism can convey the carrier jig to move along the first conveying direction, and has a Located at the front end of the feed in the wetting zone and at the rear end of the discharge in the drying zone, the second conveying mechanism can convey the carrier jig to move in a second conveying direction opposite to the first conveying direction, and has A feed back end adjacent to the discharge back end, and a discharge front end adjacent to the feed front end. The wet processing equipment also includes a transfer device, the transfer device including a downstream side of the drying zone Temporary storage mechanism, and a traverse mechanism located on the downstream side of the temporary storage mechanism. The temporary storage mechanism includes a first conveying unit and an elevating unit. The first conveying unit corresponds to the discharge rear end for receiving For the bearing jig output from the discharge rear end, the lifting unit includes a plurality of pairs of supporting rods arranged at intervals along the up and down direction, and each pair of supporting rods can be raised and lowered in the up and down direction and used to support the second The bearing fixture on a conveying unit, the traversing mechanism includes a second conveying unit, and a traversing unit for driving the second conveying unit to be aligned with the first along the left and right direction Move between the first position of the conveying unit and a second position aligned with the rear end of the feeding. When the second conveying unit is in the first position, the second conveying unit can be supported by the first conveying unit. When the second conveying unit is in the second position of the output bearing jig, the second conveying unit can convey the bearing jig to the second conveying mechanism. 如請求項1所述的濕式處理設備,還包含一位於該蝕刻區上游側的濕潤區,該濕潤區包含多對沿該第一輸送方 向相間隔排列的噴灑件、兩個沿該上下方向相間隔且位於該等噴灑件下游側的噴氣頭,及兩個沿該左右方向相間隔且位於該等噴灑件下游側的側噴氣嘴,每一該對的兩個噴灑件沿該上下方向相間隔用以對該等晶片噴灑該水,該兩噴氣頭用以對該等晶片噴氣以移除該水,該兩側噴氣嘴用以對該第一輸送機構所輸送的該承載治具上的該等晶片側向噴氣以移除該水,該兩側噴氣嘴其中之一是沿一左噴氣方向對該等晶片噴氣,而其中另一是沿一相反於該左噴氣方向的右噴氣方向對該等晶片噴氣。 The wet processing equipment according to claim 1, further comprising a wetting zone located on the upstream side of the etching zone, the wetting zone comprising a plurality of pairs along the first conveyor Spraying elements arranged at intervals, two air nozzles spaced in the vertical direction and located on the downstream side of the spraying elements, and two side air nozzles spaced apart in the left-right direction and located on the downstream side of the spraying elements, The two spraying members of each pair are spaced along the up and down direction to spray the water on the wafers, the two air jet heads are used to air the wafers to remove the water, and the two air jet nozzles are used to The wafers on the carrier jig conveyed by the first conveying mechanism are jetted laterally to remove the water, one of the two side jet nozzles jets the wafers along a left jet direction, and the other The wafers are jetted in a right jet direction opposite to the left jet direction. 一種濕式處理設備的濕式處理方法,適於對一承載治具所承載的多個晶片進行加工處理,該濕式處理設備的濕式處理方法包含下述步驟:透過一輸送裝置沿一第一輸送方向輸送該承載治具移動;透過一蝕刻區以第一藥液對沿著該第一輸送方向移動的各該晶片的多個引腳進行蝕刻;透過一第一清洗區對沿著該第一輸送方向由該蝕刻區輸出的該等晶片進行清洗;透過一去氧化區以第二藥液對沿著該第一輸送方向移動的各該晶片的該等引腳產生去氧化反應;及透過一第二清洗區對沿著該第一輸送方向由該去氧化區輸出的該等晶片進行清洗。 A wet processing method of wet processing equipment is suitable for processing a plurality of wafers carried by a carrier jig. The wet processing method of the wet processing equipment includes the following steps: The carrier jig is moved in a conveying direction; the pins of each wafer moving along the first conveying direction are etched with the first chemical solution through an etching zone; and the leads of each wafer moving along the first conveying direction are etched through a first cleaning zone. The wafers output from the etching zone in the first conveying direction are cleaned; through a deoxidation zone, a second chemical solution is used to generate a deoxidation reaction on the leads of the wafers moving along the first conveying direction; and The wafers output from the deoxidation zone along the first conveying direction are cleaned through a second cleaning zone. 如請求項21所述的濕式處理設備的濕式處理方法,還包 含一位於該第二清洗區清洗該等晶片之後的乾燥步驟,透過一乾燥區以吹熱風方式乾燥該等晶片。 The wet processing method of the wet processing equipment as described in claim 21, which also includes It includes a drying step after cleaning the wafers in the second cleaning zone, and drying the wafers by blowing hot air through a drying zone. 如請求項22所述的濕式處理設備的濕式處理方法,還包含一位於該第二清洗區清洗該等晶片之後且位於該乾燥步驟之前的移除步驟,透過一移除區以第三藥液對沿著該第一輸送方向由該第二清洗區輸出的各該晶片的一金屬保護層產生化學反應以去除該金屬保護層,該處理方法還包含一位於該移除步驟之後且位於該乾燥步驟之前的清洗步驟,透過一第三清洗區對沿著該第一輸送方向由該移除區輸出的該等晶片進行清洗。 The wet processing method of the wet processing equipment according to claim 22, further comprising a removing step after cleaning the wafers in the second cleaning area and before the drying step, and performing a third step through a removing area. The chemical solution generates a chemical reaction on a metal protection layer of each wafer output from the second cleaning zone along the first conveying direction to remove the metal protection layer. The processing method further includes a step after the removal step and The cleaning step before the drying step cleans the wafers output from the removal area along the first conveying direction through a third cleaning area. 如請求項23所述的濕式處理設備的濕式處理方法,還包含一位於該清洗步驟之後且位於該乾燥步驟之前的中和步驟,透過一中和區以第四藥液對沿著該第一輸送方向由該第三清洗區輸出的各該晶片的一金屬導熱層產生化學反應以中和去除該金屬保護層上所形成的氧化物,該處理方法還包含一位於該中和步驟之後且位於該乾燥步驟之前的清洗步驟,透過一第四清洗區對沿著該第一輸送方向由該中和區輸出的該等晶片進行清洗。 The wet treatment method of the wet treatment equipment according to claim 23, further comprising a neutralization step after the cleaning step and before the drying step, passing through a neutralization zone with the fourth chemical liquid pair along the A thermally conductive metal layer of each wafer output from the third cleaning zone in the first conveying direction generates a chemical reaction to neutralize and remove the oxide formed on the metal protective layer. The processing method further includes a step after the neutralization step In the cleaning step before the drying step, the wafers output from the neutralization zone along the first conveying direction are cleaned through a fourth cleaning zone. 如請求項22所述的濕式處理設備的濕式處理方法,其中,該輸送裝置是透過一第一輸送機構沿該第一輸送方向輸送該承載治具,還包含一位於該乾燥步驟之後的移載步驟,及一位於該移載步驟之後的回流步驟,在該移載步驟中,透過一移載裝置移載該承載治具至該輸送裝置的一第二輸送機構,在該回流步驟中,透過該第二輸 送機構沿一相反於該第一輸送方向的第二輸送方向輸送該承載治具移動。 The wet processing method of the wet processing equipment according to claim 22, wherein the conveying device conveys the carrier jig in the first conveying direction through a first conveying mechanism, and further comprises a step after the drying step A transfer step, and a reflow step after the transfer step. In the transfer step, the carrier jig is transferred to a second conveying mechanism of the conveying device through a transfer device, and in the reflow step , Through the second loss The conveying mechanism conveys the carrier jig to move in a second conveying direction opposite to the first conveying direction. 如請求項21所述的濕式處理設備的濕式處理方法,還包含一位於該蝕刻區蝕刻該等引腳之前的濕潤步驟,透過一濕潤區濕潤該等晶片。 The wet processing method of the wet processing equipment according to claim 21, further comprising a wetting step in the etching area before the pins are etched, and the wafers are wetted through a wet area.
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