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TWI730779B - Patterned shielding structure and integrated inductor - Google Patents

Patterned shielding structure and integrated inductor Download PDF

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Publication number
TWI730779B
TWI730779B TW109116986A TW109116986A TWI730779B TW I730779 B TWI730779 B TW I730779B TW 109116986 A TW109116986 A TW 109116986A TW 109116986 A TW109116986 A TW 109116986A TW I730779 B TWI730779 B TW I730779B
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trunk
shielding structure
main
patterned shielding
patterned
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TW109116986A
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Chinese (zh)
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TW202129665A (en
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顏孝璁
陳家源
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瑞昱半導體股份有限公司
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Priority to US17/081,238 priority Critical patent/US11387315B2/en
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    • H10W42/20
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00Details of transformers or inductances, in general
    • H01F27/34Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
    • H01F27/36Electric or magnetic shields or screens
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/20Inductors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

A patterned shielding structure is disposed between an inductor structure and a substrate. The patterned shielding structure includes a shielding layer. The shielding layer includes a first main portion and a plurality of branch portions. The first main portion has a T shape. The branch portions are connected to the first main portion.

Description

圖案化屏蔽結構以及積體電感Patterned shield structure and integrated inductor

本揭示中所述實施例內容是有關於一種半導體技術,特別關於一種圖案化屏蔽結構以及積體電感。The content of the embodiments described in this disclosure is related to a semiconductor technology, and particularly to a patterned shielding structure and an integrated inductor.

隨著積體電路技術的發展,積體電路中電子元件的尺寸越來越小。然而,當電子元件的尺寸越來越小,可能會伴隨許多負面影響。例如,當電感器運作時,基板所產生的渦電流將會影響到電感器的品質因數值(Q值)。With the development of integrated circuit technology, the size of electronic components in integrated circuits is getting smaller and smaller. However, as the size of electronic components gets smaller and smaller, it may be accompanied by many negative effects. For example, when the inductor is operating, the eddy current generated by the substrate will affect the quality factor (Q value) of the inductor.

由此可知見,現有方式仍存在不便與缺陷,而有待改進。為了解決上述問題,相關領域莫不費盡心思來謀求解決之道,但長久以來仍未發展出適當的解決方案。It can be seen that the existing methods still have inconveniences and shortcomings, which need to be improved. In order to solve the above-mentioned problems, the related fields have tried their best to find a solution, but the appropriate solution has not been developed for a long time.

本揭示之一些實施方式是關於一種圖案化屏蔽結構。圖案化屏蔽結構設置於一電感器結構與一基板之間。圖案化屏蔽結構包含一屏蔽層。屏蔽層包含一第一主幹部以及複數支幹部。第一主幹部呈T字狀。該些支幹部連接第一主幹部。Some embodiments of the present disclosure are related to a patterned shielding structure. The patterned shielding structure is disposed between an inductor structure and a substrate. The patterned shielding structure includes a shielding layer. The shielding layer includes a first main part and a plurality of branches. The first main cadre is in a T shape. These branch cadres connect to the first main cadre.

本揭示之一些實施方式是關於一種積體電感。積體電感包含一基板、一電感器結構以及一圖案化屏蔽結構。圖案化屏蔽結構設置於電感器結構與基板之間。圖案化屏蔽結構包含一屏蔽層。屏蔽層包含一第一主幹部以及複數支幹部。第一主幹部呈T字狀且連接該些支幹部。Some embodiments of the present disclosure are related to an integrated inductor. The integrated inductor includes a substrate, an inductor structure, and a patterned shield structure. The patterned shielding structure is disposed between the inductor structure and the substrate. The patterned shielding structure includes a shielding layer. The shielding layer includes a first main part and a plurality of branches. The first main stem is T-shaped and connects with the branches.

綜上所述,本揭示的圖案化屏蔽結構具有更好的屏蔽效果。In summary, the patterned shielding structure of the present disclosure has a better shielding effect.

下文係舉實施例配合所附圖式作詳細說明,但所提供之實施例並非用以限制本揭示所涵蓋的範圍,而結構運作之描述非用以限制其執行之順序,任何由元件重新組合之結構,所產生具有均等功效的裝置,皆為本揭示所涵蓋的範圍。另外,圖式僅以說明為目的,並未依照原尺寸作圖。為使便於理解,下述說明中相同元件或相似元件將以相同之符號標示來說明。The following is a detailed description of the embodiments with the accompanying drawings, but the provided embodiments are not used to limit the scope of the present disclosure, and the description of the structure operation is not used to limit the order of execution, any recombination of components The structure and the devices with equal effects are all within the scope of this disclosure. In addition, the drawings are for illustrative purposes only, and are not drawn in accordance with the original dimensions. To facilitate understanding, the same elements or similar elements in the following description will be described with the same symbols.

於本案中,除非內文中對於冠詞有所特別限定,否則『一』與『該』可泛指單一個或多個。將進一步理解的是,本文中所使用之『包含』、『包括』、『具有』及相似詞彙,指明其所記載的特徵、區域、整數、步驟、操作、元件與/或組件,但不排除其所述或額外的其一個或多個其它特徵、區域、整數、步驟、操作、元件、組件,與/或其中之群組。In this case, unless the article is specifically limited in the article, "一" and "the" can generally refer to one or more. It will be further understood that the terms "include", "include", "have" and similar words used in this article indicate the recorded features, regions, integers, steps, operations, elements and/or components, but do not exclude The described or additional one or more other features, regions, integers, steps, operations, elements, components, and/or groups thereof.

參考第1圖。第1圖是依照本揭示一些實施例所繪示的積體電感100的示意圖。以第1圖示例而言,積體電感100包含基板120、電感器結構140以及圖案化屏蔽結構160。Refer to Figure 1. FIG. 1 is a schematic diagram of an integrated inductor 100 according to some embodiments of the present disclosure. Taking the example of FIG. 1 as an example, the integrated inductor 100 includes a substrate 120, an inductor structure 140 and a patterned shielding structure 160.

如第1圖所示,基板120、電感器結構140以及圖案化屏蔽結構160設置在由方向X與方向Y所形成的平面上,其中方向X垂直於方向Y。在一些實施例中,基板120、電感器結構140以及圖案化屏蔽結構160可於方向Z對齊,其中方向Z垂直於方向X以及方向Y。As shown in FIG. 1, the substrate 120, the inductor structure 140, and the patterned shielding structure 160 are arranged on a plane formed by the direction X and the direction Y, where the direction X is perpendicular to the direction Y. In some embodiments, the substrate 120, the inductor structure 140, and the patterned shielding structure 160 may be aligned in a direction Z, where the direction Z is perpendicular to the direction X and the direction Y.

請一併參考第1圖以及第2圖。第2圖是依照本揭示一些實施例所繪示的電感器結構140A的示意圖。在一些實施例中,第2圖的電感器結構140A用以實現第1圖的電感器結構140,但本揭示不以此為限。在一些實施例中,電感器結構140應用於差動(differential)訊號。Please refer to Figure 1 and Figure 2 together. FIG. 2 is a schematic diagram of the inductor structure 140A according to some embodiments of the present disclosure. In some embodiments, the inductor structure 140A in FIG. 2 is used to implement the inductor structure 140 in FIG. 1, but the present disclosure is not limited thereto. In some embodiments, the inductor structure 140 is applied to a differential signal.

如第2圖所示,電感器結構140呈螺旋狀。電感器結構140中形成開口O。開口O的兩側分別為金屬節段S1以及金屬節段S2。在一些相關技術中,若未在基板120與電感器結構140之間設置圖案化屏蔽結構,電感器結構140運作時所產生的磁場會造成基板120上產生渦電流。而渦電流會影響到電感器結構140的品質因數值(Q值)。As shown in Figure 2, the inductor structure 140 has a spiral shape. An opening O is formed in the inductor structure 140. The two sides of the opening O are respectively a metal segment S1 and a metal segment S2. In some related technologies, if a patterned shielding structure is not provided between the substrate 120 and the inductor structure 140, the magnetic field generated during the operation of the inductor structure 140 will cause an eddy current to be generated on the substrate 120. The eddy current will affect the quality factor value (Q value) of the inductor structure 140.

然而,在第1圖中,基板120與電感器結構   140之間設置有圖案化屏蔽結構160。圖案化屏蔽結構160可降低電感器結構140的兩側的金屬節段(例如:金屬節段S1與金屬節段S2)之間的互感,以避免基板120產生上述的渦電流。藉此,可有效地維持電感器結構140的品質因數值且可避免雜訊。However, in Figure 1, a patterned shield structure 160 is provided between the substrate 120 and the inductor structure 140. The patterned shielding structure 160 can reduce the mutual inductance between the metal segments (for example, the metal segment S1 and the metal segment S2) on both sides of the inductor structure 140 to prevent the substrate 120 from generating the aforementioned eddy current. In this way, the quality factor value of the inductor structure 140 can be effectively maintained and noise can be avoided.

在一些實施例中,圖案化屏蔽結構160形成於金屬層(M1)。在一些實施例中,圖案化屏蔽結構160可接至地,但本揭示不以此為限。In some embodiments, the patterned shielding structure 160 is formed on the metal layer (M1). In some embodiments, the patterned shielding structure 160 may be connected to the ground, but the present disclosure is not limited to this.

上述關於電感器結構140A的形狀或配置僅為示例。電感器結構140A的各種形狀或各種配置皆在本揭示所涵蓋的範圍內。The above-mentioned shape or configuration of the inductor structure 140A is only an example. Various shapes or configurations of the inductor structure 140A are within the scope of the present disclosure.

請參考第3圖。第3圖是依照本揭示一些實施例所繪示的圖案化屏蔽結構160A的示意圖。在一些實施例中,第3圖的圖案化屏蔽結構160A用以實現第1圖的圖案化屏蔽結構160,但本揭示不以此為限。以第3圖示例而言,圖案化屏蔽結構160A包含主幹部M1、主幹部M2以及複數支幹部B。在一些實施例中,主幹部M1以及主幹部M2具有第一線寬,該些支幹部B具有第二線寬,且第一線寬大於第二線寬。也就是說,相較於該些支幹部B,主幹部M1以及主幹部M2較粗。在進一步的實施例中,第一線寬是第二線寬的兩倍以上。Please refer to Figure 3. FIG. 3 is a schematic diagram of a patterned shield structure 160A according to some embodiments of the present disclosure. In some embodiments, the patterned shielding structure 160A in FIG. 3 is used to implement the patterned shielding structure 160 in FIG. 1, but the present disclosure is not limited to this. Taking the example of FIG. 3 as an example, the patterned shielding structure 160A includes a trunk portion M1, a trunk portion M2, and a plurality of trunk portions B. In some embodiments, the trunk portion M1 and the trunk portion M2 have a first line width, and the branch portions B have a second line width, and the first line width is greater than the second line width. That is to say, compared to the branch cadres B, the main cadre part M1 and the main cadre part M2 are thicker. In a further embodiment, the first line width is more than twice the second line width.

主幹部M1以及主幹部M2呈T字狀。主幹部M1連接主幹部M2。支幹部B連接主幹部M1或主幹部M2。具體而言,主幹部M1包含導電部件C1以及導電部件C2。主幹部M2包含導電部件C3以及導電部件C4。導電部件C1以及導電部件C3朝方向X延伸。導電部件C2以及導電部件C4朝方向Y延伸。導電部件C1的長度相同於導電部件C3的長度。導電部件C2的長度相同於導電部件C4的長度。導電部件C1(或導電部件C3)的長度大於導電部件C2(或導電部件C4)的長度。支幹部B1呈梳狀,而支幹部B2呈長條狀。在一些實施例中,所有梳狀的支幹部B1朝向同一個方向(例如:方向X的負向)設置。在一些實施例中,相較於支幹部B1,支幹部B2較靠近導電部件C2(或導電部件C4)。The main cadre M1 and the main cadre M2 are T-shaped. The main part M1 is connected to the main part M2. The branch cadre B is connected to the main cadre M1 or the main cadre M2. Specifically, the trunk portion M1 includes a conductive member C1 and a conductive member C2. The trunk portion M2 includes a conductive member C3 and a conductive member C4. The conductive member C1 and the conductive member C3 extend in the direction X. The conductive member C2 and the conductive member C4 extend in the direction Y. The length of the conductive member C1 is the same as the length of the conductive member C3. The length of the conductive member C2 is the same as the length of the conductive member C4. The length of the conductive part C1 (or the conductive part C3) is greater than the length of the conductive part C2 (or the conductive part C4). The stem branch B1 is comb-shaped, while the stem branch B2 is elongated. In some embodiments, all the comb-shaped stem parts B1 face the same direction (for example, the negative direction of the direction X). In some embodiments, the branch portion B2 is closer to the conductive component C2 (or the conductive component C4) than the branch portion B1.

以第3圖示例而言,單一個支幹部B1具有偶數個(例如:4個)梳齒部E,且該些梳齒部E的長度相同。在一些其他的實施例中,單一個支幹部B1可具有奇數個梳齒部E。在一些其他的實施例中,該些支幹部B1的該些梳齒部E的數量可為部分相異或全部相異。Taking the example of FIG. 3 as an example, a single stem portion B1 has an even number (for example, 4) comb tooth portions E, and the length of the comb tooth portions E is the same. In some other embodiments, a single stem portion B1 may have an odd number of comb tooth portions E. In some other embodiments, the number of the comb tooth parts E of the stem parts B1 may be partially different or completely different.

以第3圖示例而言,各區塊的支幹部B2的數量為奇數。舉例而言,連接導電部件C1且設置於導電部件C2右側的支幹部B2的數量為3個。連接導電部件C1且設置於導電部件C2左側的支幹部B2的數量為3個。連接導電部件C3且設置於導電部件C4右側的支幹部B2的數量可為奇數為3個。連接導電部件C3且設置於導電部件C4左側的支幹部B2的數量可為奇數為3個。在一些其他的實施例中,各區塊的支幹部B2的數量可為偶數。Taking the example shown in Figure 3, the number of branch cadres B2 in each block is an odd number. For example, the number of the branch portions B2 connected to the conductive member C1 and arranged on the right side of the conductive member C2 is three. The number of the branch portions B2 connected to the conductive member C1 and provided on the left side of the conductive member C2 is three. The number of the branch portions B2 connected to the conductive member C3 and arranged on the right side of the conductive member C4 can be an odd number of three. The number of the branch portions B2 connected to the conductive member C3 and arranged on the left side of the conductive member C4 can be an odd number of three. In some other embodiments, the number of branches B2 in each block may be an even number.

另外,如第2圖所示,電感器結構140A包含輸入端IN。輸入端IN用以接收輸入訊號。第3圖的圖案化屏蔽結構160A於由方向X與方向Y所形成的平面上的垂直投影與輸入端IN於該平面的垂直投影至少部分重疊。舉例而言,導電部件C1與導電部件C2的連接位置位於第2圖的輸入端IN的上方。藉此,可達到更好的屏蔽效果。In addition, as shown in FIG. 2, the inductor structure 140A includes an input terminal IN. The input terminal IN is used to receive the input signal. The vertical projection of the patterned shielding structure 160A in FIG. 3 on the plane formed by the direction X and the direction Y and the vertical projection of the input terminal IN on the plane at least partially overlap. For example, the connection position of the conductive member C1 and the conductive member C2 is located above the input terminal IN in FIG. 2. In this way, a better shielding effect can be achieved.

參考第4圖。第4圖是依照本揭示一些實施例所繪示的圖案化屏蔽結構160B的示意圖。在一些實施例中,第4圖的圖案化屏蔽結構160B用以實現第1圖的圖案化屏蔽結構160,但本揭示不以此為限。第4圖的圖案化屏蔽結構160B與第3圖的圖案化屏蔽結構160A之間的主要差異在於,在第4圖的圖案化屏蔽結構160B中,導電部件C1與導電部件C3相鄰,且導電部件C2與導電部件C4透過連接部P連接。換個方式解釋,導電部件C1與導電部件C3之間的空間並未設置任何支幹部,且導電部件C1與導電部件C3間之間的空間僅設置連接部P。Refer to Figure 4. FIG. 4 is a schematic diagram of a patterned shielding structure 160B according to some embodiments of the present disclosure. In some embodiments, the patterned shielding structure 160B in FIG. 4 is used to implement the patterned shielding structure 160 in FIG. 1, but the present disclosure is not limited thereto. The main difference between the patterned shielding structure 160B of FIG. 4 and the patterned shielding structure 160A of FIG. 3 is that, in the patterned shielding structure 160B of FIG. 4, the conductive member C1 and the conductive member C3 are adjacent to each other and conductive The component C2 and the conductive component C4 are connected through the connecting portion P. To explain in another way, the space between the conductive component C1 and the conductive component C3 is not provided with any branch portion, and the space between the conductive component C1 and the conductive component C3 is only provided with the connecting portion P.

參考第5圖。第5圖是依照本揭示一些實施例所繪示的圖案化屏蔽結構160C的示意圖。在一些實施例中,第5圖的圖案化屏蔽結構160C用以實現第1圖的圖案化屏蔽結構160,但本揭示不以此為限。第5圖的圖案化屏蔽結構160C與第4圖的圖案化屏蔽結構160B之間的主要差異在於,在第5圖的圖案化屏蔽結構160C中,所有梳狀的支幹部B11-B18並非皆朝向同一個方向設置。以第5圖示例而言,支幹部B11以及支幹部B12朝向同一個方向(方向Y的負向)設置,支幹部B13以及支幹部B14朝向同一個方向(方向Y的正向)設置,支幹部B15以及支幹部B16朝向同一個方向(方向X的正向)設置,且支幹部B17以及支幹部B18朝向同一個方向(方向X的負向)設置。Refer to Figure 5. FIG. 5 is a schematic diagram of the patterned shielding structure 160C according to some embodiments of the present disclosure. In some embodiments, the patterned shielding structure 160C in FIG. 5 is used to implement the patterned shielding structure 160 in FIG. 1, but the present disclosure is not limited thereto. The main difference between the patterned shielding structure 160C of FIG. 5 and the patterned shielding structure 160B of FIG. 4 is that in the patterned shielding structure 160C of FIG. 5, all the comb-shaped branch portions B11-B18 are not all facing Set in the same direction. Taking the example in Figure 5, the stem portion B11 and the stem portion B12 are arranged in the same direction (the negative direction of direction Y), and the stem portion B13 and the stem portion B14 are arranged in the same direction (the positive direction of the direction Y). The stem portion B15 and the branch stem portion B16 are arranged facing the same direction (the positive direction of the direction X), and the stem portion B17 and the branch stem portion B18 are arranged in the same direction (the negative direction of the direction X).

另外,以第5圖示例而言,單一個支幹部(例如:支幹部B11)的所有梳齒部E的長度為部分相異。在一些其他的實施例中,單一個支幹部的該些梳齒部E的長度可為全部相異。In addition, taking the example of FIG. 5 as an example, the lengths of all the comb tooth portions E of a single stem portion (for example, the stem portion B11) are partially different. In some other embodiments, the lengths of the comb tooth portions E of a single stem portion may be all different.

上述該些支幹部B11-B18以及B2的設置方式僅為示例,該些支幹部B11-B18以及B2的各種設置方式皆在本揭示所涵蓋的範圍內。The above-mentioned setting methods of the branches B11-B18 and B2 are only examples, and the various setting methods of the branches B11-B18 and B2 are all within the scope of the present disclosure.

參考第6圖。第6圖是依照本揭示一些實施例所繪示的圖案化屏蔽結構160D的示意圖。在一些實施例中,第6圖的圖案化屏蔽結構160D用以實現第1圖的圖案化屏蔽結構160,但本揭示不以此為限。以第6圖示例而言,在圖案化屏蔽結構160D中,主幹部M11、主幹部M12、主幹部M21、主幹部M22呈T字狀。主幹部L1以及主幹部L2呈長條狀。主幹部M11以及主幹部M12透過連接部P1連接。主幹部M21以及主幹部M22透過連接部P2連接。主幹部L1連接主幹部M12。主幹部L2連接主幹部M21。主幹部L1以及主幹部L2透過連接部P3連接。如此一來,主幹部M11、主幹部M12、主幹部M21、主幹部M22、主幹部L1、主幹部L2、連接部P1、連接部P2、連接部P3將會共同形成一魚骨狀結構。Refer to Figure 6. FIG. 6 is a schematic diagram of a patterned shielding structure 160D according to some embodiments of the present disclosure. In some embodiments, the patterned shielding structure 160D of FIG. 6 is used to implement the patterned shielding structure 160 of FIG. 1, but the present disclosure is not limited thereto. Taking the example of FIG. 6 as an example, in the patterned shield structure 160D, the trunk portion M11, the trunk portion M12, the trunk portion M21, and the trunk portion M22 are T-shaped. The trunk part L1 and the trunk part L2 are elongated. The trunk part M11 and the trunk part M12 are connected through the connection part P1. The trunk part M21 and the trunk part M22 are connected through the connection part P2. The trunk part L1 is connected to the trunk part M12. The trunk part L2 is connected to the trunk part M21. The trunk part L1 and the trunk part L2 are connected through the connection part P3. In this way, the trunk part M11, the trunk part M12, the trunk part M21, the trunk part M22, the trunk part L1, the trunk part L2, the connecting part P1, the connecting part P2 and the connecting part P3 will jointly form a fishbone structure.

在一些實施例中,主幹部M11、主幹部M12、主幹部M21、主幹部M22、主幹部L1、主幹部L2具有第一線寬,其他支幹部具有第二線寬,且第一線寬大於第二線寬。而且當第一線寬和第二線寬有1.5倍以上的比例時,有較佳的品質因數值(Q值)效能。也就是說,相較於該些支幹部,主幹部M11、主幹部M12、主幹部M21、主幹部M22、主幹部L1、主幹部L2較粗。在進一步的實施例中,第一線寬是第二線寬的兩倍以上。In some embodiments, the trunk portion M11, the trunk portion M12, the trunk portion M21, the trunk portion M22, the trunk portion L1, and the trunk portion L2 have a first line width, the other branches have a second line width, and the first line width is greater than The second line width. Moreover, when the ratio of the first line width to the second line width is more than 1.5 times, the quality factor value (Q value) performance is better. That is to say, compared to these branch cadres, the main trunk M11, the trunk M12, the trunk M21, the trunk M22, the trunk L1, and the trunk L2 are thicker. In a further embodiment, the first line width is more than twice the second line width.

參考第7圖。第7圖是依照本揭示一些實施例所繪示的圖案化屏蔽結構160E的示意圖。在一些實施例中,第7圖的圖案化屏蔽結構160E用以實現第1圖的圖案化屏蔽結構160,但本揭示不以此為限。以第7圖示例而言,圖案化屏蔽結構160E包含主幹部M1、主幹部M2、主幹部M3以及主幹部M4。主幹部M1、主幹部M2、主幹部M3以及主幹部M4皆呈T字狀且依序相差90度設置。主幹部M1、主幹部M2、主幹部M3以及主幹部M4連接於連接節點N2。圖案化屏蔽結構160E更包含複數呈長條狀的支幹部B2。該些支幹部B2分別連接於主幹部M1、主幹部M2、主幹部M3以及主幹部M4,且設置於該些主幹部M1-M4中兩者所形成的空間中。舉例而言,部分支幹部B2設置於主幹部M1與主幹部M3所形成的空間中。部分支幹部B2設置於主幹部M1與主幹部M4所形成的空間中。部分支幹部B2設置於主幹部M2與主幹部M3所形成的空間中。部分支幹部B2設置於主幹部M2與主幹部M4所形成的空間中。Refer to Figure 7. FIG. 7 is a schematic diagram of a patterned shielding structure 160E according to some embodiments of the present disclosure. In some embodiments, the patterned shielding structure 160E in FIG. 7 is used to implement the patterned shielding structure 160 in FIG. 1, but the present disclosure is not limited thereto. Taking the example of FIG. 7 as an example, the patterned shielding structure 160E includes a trunk portion M1, a trunk portion M2, a trunk portion M3, and a trunk portion M4. The main part M1, the main part M2, the main part M3, and the main part M4 are all in a T shape and are arranged in sequence with a difference of 90 degrees. The trunk part M1, the trunk part M2, the trunk part M3, and the trunk part M4 are connected to the connection node N2. The patterned shielding structure 160E further includes a plurality of elongated branch portions B2. The branches B2 are respectively connected to the main main part M1, the main main part M2, the main main part M3, and the main main part M4, and are arranged in the space formed by both of the main main parts M1-M4. For example, part of the branch portion B2 is arranged in the space formed by the main portion M1 and the main portion M3. Part of the branch part B2 is arranged in the space formed by the main part M1 and the main part M4. Part of the branch portion B2 is arranged in the space formed by the main portion M2 and the main portion M3. Part of the branch part B2 is arranged in the space formed by the main part M2 and the main part M4.

在一些實施例中,主幹部M1、主幹部M2、主幹部M3以及主幹部M4具有第一線寬,該些支幹部B1以及該些支幹部B2具有第二線寬,且第一線寬大於第二線寬。也就是說,相較於該些支幹部B1以及B2,主幹部M1、主幹部M2、主幹部M3以及主幹部M4較粗。在進一步的實施例中,第一線寬是第二線寬的兩倍以上。In some embodiments, the trunk portion M1, the trunk portion M2, the trunk portion M3, and the trunk portion M4 have a first line width, the branch portions B1 and the branch portions B2 have a second line width, and the first line width is greater than The second line width. That is to say, compared with the branches B1 and B2, the trunk portion M1, the trunk portion M2, the trunk portion M3, and the trunk portion M4 are thicker. In a further embodiment, the first line width is more than twice the second line width.

參考第8圖。第8圖是依照本揭示一些實施例所繪示的圖案化屏蔽結構160F的示意圖。在一些實施例中,第8圖的圖案化屏蔽結構160F用以實現第1圖的圖案化屏蔽結構160,但本揭示不以此為限。第8圖的圖案化屏蔽結構160F包含主幹部M1、主幹部M2、主幹部M3、主幹部M4以及支幹部B2。主幹部M1、主幹部M2、主幹部M3以及主幹部M4連接於連接節點N2。支幹部B2呈長條狀且其長度並非全部相同。另外,相較於第7圖的圖案化屏蔽結構160E的主幹部M1-M4,第8圖中的圖案化屏蔽結構160F的主幹部M1-M4旋轉了一個角度(例如:45度),但本揭示不以此角度為限。Refer to Figure 8. FIG. 8 is a schematic diagram of a patterned shielding structure 160F according to some embodiments of the present disclosure. In some embodiments, the patterned shielding structure 160F in FIG. 8 is used to implement the patterned shielding structure 160 in FIG. 1, but the present disclosure is not limited thereto. The patterned shielding structure 160F in FIG. 8 includes a trunk portion M1, a trunk portion M2, a trunk portion M3, a trunk portion M4, and a branch portion B2. The trunk part M1, the trunk part M2, the trunk part M3, and the trunk part M4 are connected to the connection node N2. The branches B2 are elongated and their lengths are not all the same. In addition, compared with the stem portions M1-M4 of the patterned shielding structure 160E in FIG. 7, the stem portions M1-M4 of the patterned shielding structure 160F in FIG. 8 are rotated by an angle (for example: 45 degrees). Disclosure is not limited to this angle.

在一些實施例中,上述圖案化屏蔽結構160A-160F的各者為上下對稱。據此,屏蔽效果較佳。然而,在一些其他的實施例中,上述圖案化屏蔽結構160A-160F的各者亦可為上下不對稱。In some embodiments, each of the aforementioned patterned shielding structures 160A-160F is symmetrical up and down. Accordingly, the shielding effect is better. However, in some other embodiments, each of the aforementioned patterned shielding structures 160A-160F may also be asymmetric from top to bottom.

綜上所述,本揭示的圖案化屏蔽結構具有更好的屏蔽效果。In summary, the patterned shielding structure of the present disclosure has a better shielding effect.

雖然本揭示已以實施方式揭示如上,然其並非用以限定本揭示,任何本領域具通常知識者,在不脫離本揭示之精神和範圍內,當可作各種之更動與潤飾,因此本揭示之保護範圍當視後附之申請專利範圍所界定者為準。Although the present disclosure has been disclosed in the above embodiments, it is not intended to limit the present disclosure. Anyone with ordinary knowledge in the field can make various changes and modifications without departing from the spirit and scope of the present disclosure. Therefore, the present disclosure The scope of protection shall be subject to the scope of the attached patent application.

100:積體電感 120:基板 140:電感器結構 140A:電感器結構 160:圖案化屏蔽結構 160A:圖案化屏蔽結構 160B:圖案化屏蔽結構 160C:圖案化屏蔽結構 160D:圖案化屏蔽結構 160E:圖案化屏蔽結構 160F: 圖案化屏蔽結構 X:方向 Y:方向 Z:方向 O:開口 S1:金屬節段 S2:金屬節段 M1:主幹部 M2:主幹部 M3:主幹部 M4:主幹部 M5:主幹部 M6:主幹部 M11:主幹部 M12:主幹部 M21:主幹部 M22:主幹部 L1:主幹部 L2:主幹部 C1:導電部件 C2:導電部件 C3:導電部件 C4:導電部件 B:支幹部 B1:支幹部 B2:支幹部 B11:支幹部 B12:支幹部 B13:支幹部 B14:支幹部 B15:支幹部 B16:支幹部 B17:支幹部 B18:支幹部 E:梳齒部 P:連接部 P1:連接部 P2:連接部 P3:連接部 N2:連接節點 IN:輸入端 100: Integrated inductor 120: substrate 140: Inductor structure 140A: Inductor structure 160: Patterned shielding structure 160A: Patterned shielding structure 160B: Patterned shielding structure 160C: Patterned shielding structure 160D: Patterned shielding structure 160E: Patterned shielding structure 160F: Patterned shielding structure X: direction Y: direction Z: direction O: opening S1: Metal segment S2: Metal segment M1: Main cadre M2: Main cadre M3: Main cadre M4: Main cadre M5: Main cadre M6: Main cadre M11: Main cadre M12: main cadre M21: Main cadre M22: Main cadre L1: main cadre L2: main cadre C1: conductive parts C2: conductive parts C3: conductive parts C4: conductive parts B: Branch cadres B1: Branch cadres B2: Branch cadres B11: Branch cadres B12: Branch cadres B13: Branch cadres B14: Branch cadres B15: Branch cadres B16: Branch cadres B17: Branch cadres B18: Branch cadres E: comb tooth P: Connection part P1: Connection part P2: Connection part P3: Connection part N2: connecting node IN: Input

為讓本揭示之上述和其他目的、特徵、優點與實施例能夠更明顯易懂,所附圖式之說明如下: 第1圖是依照本揭示一些實施例所繪示的一積體電感的示意圖; 第2圖是依照本揭示一些實施例所繪示的一電感器結構的示意圖; 第3圖是依照本揭示一些實施例所繪示的一圖案化屏蔽結構的示意圖; 第4圖是依照本揭示一些實施例所繪示的一圖案化屏蔽結構的示意圖; 第5圖是依照本揭示一些實施例所繪示的一圖案化屏蔽結構的示意圖; 第6圖是依照本揭示一些實施例所繪示的一圖案化屏蔽結構的示意圖; 第7圖是依照本揭示一些實施例所繪示的一圖案化屏蔽結構的示意圖;以及 第8圖是依照本揭示一些實施例所繪示的一圖案化屏蔽結構的示意圖。 In order to make the above and other objectives, features, advantages and embodiments of the present disclosure more comprehensible, the description of the accompanying drawings is as follows: FIG. 1 is a schematic diagram of an integrated inductor according to some embodiments of the present disclosure; FIG. 2 is a schematic diagram of an inductor structure according to some embodiments of the present disclosure; FIG. 3 is a schematic diagram of a patterned shielding structure according to some embodiments of the present disclosure; FIG. 4 is a schematic diagram of a patterned shield structure according to some embodiments of the present disclosure; FIG. 5 is a schematic diagram of a patterned shield structure according to some embodiments of the present disclosure; FIG. 6 is a schematic diagram of a patterned shield structure according to some embodiments of the present disclosure; FIG. 7 is a schematic diagram of a patterned shield structure according to some embodiments of the present disclosure; and FIG. 8 is a schematic diagram of a patterned shield structure according to some embodiments of the present disclosure.

160A:圖案化屏蔽結構 160A: Patterned shielding structure

X:方向 X: direction

Y:方向 Y: direction

M1:主幹部 M1: Main cadre

M2:主幹部 M2: Main cadre

C1:導電部件 C1: conductive parts

C2:導電部件 C2: conductive parts

C3:導電部件 C3: conductive parts

C4:導電部件 C4: conductive parts

B:支幹部 B: Branch cadres

B1:支幹部 B1: Branch cadres

B2:支幹部 B2: Branch cadres

E:梳齒部 E: comb tooth

Claims (9)

一種圖案化屏蔽結構,設置於一電感器結構與一基板之間,其中該圖案化屏蔽結構包含:一屏蔽層,包含:一第一主幹部,呈T字狀;以及複數支幹部,連接該第一主幹部,其中該些支幹部中的複數第一支幹部呈梳狀,且呈梳狀的該些第一支幹部皆朝一相同方向設置。 A patterned shielding structure is arranged between an inductor structure and a substrate, wherein the patterned shielding structure includes: a shielding layer, including: a first trunk portion having a T-shape; and a plurality of trunk portions connected to the The first main stem portion, wherein the plurality of first stem portions of the stem portions are comb-shaped, and the first stem portions that are comb-shaped are all arranged in the same direction. 如請求項1所述的圖案化屏蔽結構,其中該第一主幹部具有一第一線寬,該些支幹部的一者具有一第二線寬,且該第一線寬大於該第二線寬。 The patterned shielding structure according to claim 1, wherein the first main portion has a first line width, one of the branch portions has a second line width, and the first line width is greater than the second line width. 如請求項2所述的圖案化屏蔽結構,其中該第一線寬是該第二線寬的兩倍以上。 The patterned shield structure according to claim 2, wherein the first line width is more than twice the second line width. 如請求項1所述的圖案化屏蔽結構,更包含:一第二主幹部,呈T字狀且連接該第一主幹部。 The patterned shielding structure according to claim 1, further comprising: a second main part, which is T-shaped and connected to the first main part. 如請求項4所述的圖案化屏蔽結構,其中該第一主幹部包含一第一導電部件以及一第二導電部件,且該第二主幹部包含一第三導電部件以及一第四導電部件,其中該第一導電部件以及該第三導電部件朝一第一方向延 伸,該第二導電部件以及該第四導電部件朝一第二方向延伸,且該第二方向垂直於該第一方向。 The patterned shielding structure according to claim 4, wherein the first trunk portion includes a first conductive component and a second conductive component, and the second trunk portion includes a third conductive component and a fourth conductive component, Wherein the first conductive component and the third conductive component extend in a first direction Extending, the second conductive component and the fourth conductive component extend in a second direction, and the second direction is perpendicular to the first direction. 如請求項5所述的圖案化屏蔽結構,其中該第一導電部件以及該第三導電部件相鄰,且該第二導電部件以及該第四導電部件透過一連接部連接。 The patterned shielding structure according to claim 5, wherein the first conductive member and the third conductive member are adjacent, and the second conductive member and the fourth conductive member are connected through a connecting portion. 如請求項4所述的圖案化屏蔽結構,更包含:一第三主幹部,呈T字狀;以及一第四主幹部,呈T字狀,其中該第一主幹部、該第二主幹部、該第三主幹部以及該第四主幹部連接,其中該第一主幹部、該第二主幹部、該第三主幹部以及該第四主幹部依序相差90度設置。 The patterned shielding structure according to claim 4, further comprising: a third main body part having a T-shape; and a fourth main body part having a T-shape, wherein the first main body part and the second main body part , The third trunk part and the fourth trunk part are connected, wherein the first trunk part, the second trunk part, the third trunk part, and the fourth trunk part are arranged in sequence with a difference of 90 degrees. 如請求項7所述的圖案化屏蔽結構,其中該第二主幹部、該第三主幹部以及該第四主幹部具有一第一線寬,該些支幹部的一者具有一第二線寬,且該第一線寬大於該第二線寬。 The patterned shielding structure according to claim 7, wherein the second main portion, the third main portion, and the fourth main portion have a first line width, and one of the branch portions has a second line width , And the first line width is greater than the second line width. 一種積體電感,包含:一基板;一電感器結構;以及一圖案化屏蔽結構,設置於該電感器結構與該基板之 間,其中該圖案化屏蔽結構包含一屏蔽層,該屏蔽層包含一第一主幹部、一第二主幹部、一第三主幹部、複數連接部以及複數支幹部,該第一主幹部以及該第二主幹部呈T字狀且連接該些支幹部,該第三主幹部呈長條狀,該第一主幹部、該第二主幹部、該第三主幹部以及該些連接部共同形成一魚骨狀結構。 An integrated inductor, comprising: a substrate; an inductor structure; and a patterned shielding structure, arranged between the inductor structure and the substrate Wherein, the patterned shielding structure includes a shielding layer, the shielding layer includes a first main part, a second main part, a third main part, a plurality of connecting parts and a plurality of branch parts, the first main part and the The second trunk part is T-shaped and connects the branches, the third trunk part is elongated, and the first trunk part, the second trunk part, the third trunk part, and the connecting parts together form a Fishbone structure.
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