TWI719965B - Layered body - Google Patents
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- TWI719965B TWI719965B TW105106736A TW105106736A TWI719965B TW I719965 B TWI719965 B TW I719965B TW 105106736 A TW105106736 A TW 105106736A TW 105106736 A TW105106736 A TW 105106736A TW I719965 B TWI719965 B TW I719965B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- tetracarboxylic dianhydride
- release layer
- composition
- carbon
- Prior art date
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 53
- 239000000203 mixture Substances 0.000 claims abstract description 44
- 239000004952 Polyamide Substances 0.000 claims abstract description 24
- 229920002647 polyamide Polymers 0.000 claims abstract description 24
- 239000002253 acid Substances 0.000 claims abstract description 23
- 239000000945 filler Substances 0.000 claims abstract description 19
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 13
- 239000003960 organic solvent Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 90
- 239000011347 resin Substances 0.000 claims description 44
- 229920005989 resin Polymers 0.000 claims description 44
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 42
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 25
- 239000002041 carbon nanotube Substances 0.000 claims description 19
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 18
- 125000003118 aryl group Chemical group 0.000 claims description 17
- 125000006158 tetracarboxylic acid group Chemical group 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 229910021389 graphene Inorganic materials 0.000 claims description 11
- 150000004984 aromatic diamines Chemical class 0.000 claims description 9
- 229920001721 polyimide Polymers 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 77
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 20
- 238000010438 heat treatment Methods 0.000 description 19
- 239000010408 film Substances 0.000 description 18
- 239000011521 glass Substances 0.000 description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 238000002360 preparation method Methods 0.000 description 12
- 239000000243 solution Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 238000000576 coating method Methods 0.000 description 10
- 239000006185 dispersion Substances 0.000 description 10
- 238000003756 stirring Methods 0.000 description 10
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 7
- 150000004985 diamines Chemical class 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000003575 carbonaceous material Substances 0.000 description 6
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 229920005575 poly(amic acid) Polymers 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 5
- QBSMHWVGUPQNJJ-UHFFFAOYSA-N 4-[4-(4-aminophenyl)phenyl]aniline Chemical compound C1=CC(N)=CC=C1C1=CC=C(C=2C=CC(N)=CC=2)C=C1 QBSMHWVGUPQNJJ-UHFFFAOYSA-N 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 5
- 238000009210 therapy by ultrasound Methods 0.000 description 5
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 4
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000002109 single walled nanotube Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- BOVVHULZWVFIOX-UHFFFAOYSA-N 4-[3-(4-aminophenyl)phenyl]aniline Chemical compound C1=CC(N)=CC=C1C1=CC=CC(C=2C=CC(N)=CC=2)=C1 BOVVHULZWVFIOX-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- -1 benzene Core aromatic diamine Chemical class 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 239000006229 carbon black Substances 0.000 description 3
- 235000019241 carbon black Nutrition 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000002079 double walled nanotube Substances 0.000 description 3
- 238000005227 gel permeation chromatography Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 3
- 239000002048 multi walled nanotube Substances 0.000 description 3
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 2
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 description 2
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 2
- QCILMAMLEHOLRX-UHFFFAOYSA-N 2-(3-aminophenyl)-3h-benzimidazol-5-amine Chemical compound NC1=CC=CC(C=2NC3=CC(N)=CC=C3N=2)=C1 QCILMAMLEHOLRX-UHFFFAOYSA-N 0.000 description 2
- UMGYJGHIMRFYSP-UHFFFAOYSA-N 2-(4-aminophenyl)-1,3-benzoxazol-5-amine Chemical compound C1=CC(N)=CC=C1C1=NC2=CC(N)=CC=C2O1 UMGYJGHIMRFYSP-UHFFFAOYSA-N 0.000 description 2
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 2
- WWNABCFITWBKEM-UHFFFAOYSA-N 3-[3-(3-aminophenyl)phenyl]aniline Chemical compound NC1=CC=CC(C=2C=C(C=CC=2)C=2C=C(N)C=CC=2)=C1 WWNABCFITWBKEM-UHFFFAOYSA-N 0.000 description 2
- ICNFHJVPAJKPHW-UHFFFAOYSA-N 4,4'-Thiodianiline Chemical compound C1=CC(N)=CC=C1SC1=CC=C(N)C=C1 ICNFHJVPAJKPHW-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002134 carbon nanofiber Substances 0.000 description 2
- 239000012295 chemical reaction liquid Substances 0.000 description 2
- 239000007810 chemical reaction solvent Substances 0.000 description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 239000000706 filtrate Substances 0.000 description 2
- 229920002457 flexible plastic Polymers 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 125000000623 heterocyclic group Chemical group 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 150000002466 imines Chemical class 0.000 description 2
- 239000011254 layer-forming composition Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- AMXOYNBUYSYVKV-UHFFFAOYSA-M lithium bromide Chemical compound [Li+].[Br-] AMXOYNBUYSYVKV-UHFFFAOYSA-M 0.000 description 2
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical class C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- BBYQSYQIKWRMOE-UHFFFAOYSA-N naphthalene-1,2,6,7-tetracarboxylic acid Chemical compound C1=C(C(O)=O)C(C(O)=O)=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 BBYQSYQIKWRMOE-UHFFFAOYSA-N 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- LZOZLBFZGFLFBV-UHFFFAOYSA-N sulfene Chemical compound C=S(=O)=O LZOZLBFZGFLFBV-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- YFOOEYJGMMJJLS-UHFFFAOYSA-N 1,8-diaminonaphthalene Chemical compound C1=CC(N)=C2C(N)=CC=CC2=C1 YFOOEYJGMMJJLS-UHFFFAOYSA-N 0.000 description 1
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 1
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 1
- IBLKWZIFZMJLFL-UHFFFAOYSA-N 1-phenoxypropan-2-ol Chemical compound CC(O)COC1=CC=CC=C1 IBLKWZIFZMJLFL-UHFFFAOYSA-N 0.000 description 1
- WCZNKVPCIFMXEQ-UHFFFAOYSA-N 2,3,5,6-tetramethylbenzene-1,4-diamine Chemical compound CC1=C(C)C(N)=C(C)C(C)=C1N WCZNKVPCIFMXEQ-UHFFFAOYSA-N 0.000 description 1
- ZVDSMYGTJDFNHN-UHFFFAOYSA-N 2,4,6-trimethylbenzene-1,3-diamine Chemical compound CC1=CC(C)=C(N)C(C)=C1N ZVDSMYGTJDFNHN-UHFFFAOYSA-N 0.000 description 1
- VOZKAJLKRJDJLL-UHFFFAOYSA-N 2,4-diaminotoluene Chemical compound CC1=CC=C(N)C=C1N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 1
- 229940075142 2,5-diaminotoluene Drugs 0.000 description 1
- BWAPJIHJXDYDPW-UHFFFAOYSA-N 2,5-dimethyl-p-phenylenediamine Chemical compound CC1=CC(N)=C(C)C=C1N BWAPJIHJXDYDPW-UHFFFAOYSA-N 0.000 description 1
- RLYCRLGLCUXUPO-UHFFFAOYSA-N 2,6-diaminotoluene Chemical compound CC1=C(N)C=CC=C1N RLYCRLGLCUXUPO-UHFFFAOYSA-N 0.000 description 1
- MJAVQHPPPBDYAN-UHFFFAOYSA-N 2,6-dimethylbenzene-1,4-diamine Chemical compound CC1=CC(N)=CC(C)=C1N MJAVQHPPPBDYAN-UHFFFAOYSA-N 0.000 description 1
- LDXJRKWFNNFDSA-UHFFFAOYSA-N 2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound C1CN(CC2=NNN=C21)CC(=O)N3CCN(CC3)C4=CN=C(N=C4)NCC5=CC(=CC=C5)OC(F)(F)F LDXJRKWFNNFDSA-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- MTVLEKBQSDTQGO-UHFFFAOYSA-N 2-(2-ethoxypropoxy)propan-1-ol Chemical compound CCOC(C)COC(C)CO MTVLEKBQSDTQGO-UHFFFAOYSA-N 0.000 description 1
- PPPFYBPQAPISCT-UHFFFAOYSA-N 2-hydroxypropyl acetate Chemical compound CC(O)COC(C)=O PPPFYBPQAPISCT-UHFFFAOYSA-N 0.000 description 1
- OBCSAIDCZQSFQH-UHFFFAOYSA-N 2-methyl-1,4-phenylenediamine Chemical compound CC1=CC(N)=CC=C1N OBCSAIDCZQSFQH-UHFFFAOYSA-N 0.000 description 1
- HUWXDEQWWKGHRV-UHFFFAOYSA-N 3,3'-Dichlorobenzidine Chemical compound C1=C(Cl)C(N)=CC=C1C1=CC=C(N)C(Cl)=C1 HUWXDEQWWKGHRV-UHFFFAOYSA-N 0.000 description 1
- NUIURNJTPRWVAP-UHFFFAOYSA-N 3,3'-Dimethylbenzidine Chemical compound C1=C(N)C(C)=CC(C=2C=C(C)C(N)=CC=2)=C1 NUIURNJTPRWVAP-UHFFFAOYSA-N 0.000 description 1
- BRLIJPMFMGTIAW-UHFFFAOYSA-N 3,5-bis(trifluoromethyl)benzene-1,2-diamine Chemical compound NC1=CC(C(F)(F)F)=CC(C(F)(F)F)=C1N BRLIJPMFMGTIAW-UHFFFAOYSA-N 0.000 description 1
- GWHLJVMSZRKEAQ-UHFFFAOYSA-N 3-(2,3-dicarboxyphenyl)phthalic acid Chemical compound OC(=O)C1=CC=CC(C=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O GWHLJVMSZRKEAQ-UHFFFAOYSA-N 0.000 description 1
- NBAUUNCGSMAPFM-UHFFFAOYSA-N 3-(3,4-dicarboxyphenyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=CC(C(O)=O)=C1C(O)=O NBAUUNCGSMAPFM-UHFFFAOYSA-N 0.000 description 1
- JFEXPVDGVLNUSC-UHFFFAOYSA-N 3-(3-aminophenyl)sulfanylaniline Chemical compound NC1=CC=CC(SC=2C=C(N)C=CC=2)=C1 JFEXPVDGVLNUSC-UHFFFAOYSA-N 0.000 description 1
- CKOFBUUFHALZGK-UHFFFAOYSA-N 3-[(3-aminophenyl)methyl]aniline Chemical compound NC1=CC=CC(CC=2C=C(N)C=CC=2)=C1 CKOFBUUFHALZGK-UHFFFAOYSA-N 0.000 description 1
- FGWQCROGAHMWSU-UHFFFAOYSA-N 3-[(4-aminophenyl)methyl]aniline Chemical compound C1=CC(N)=CC=C1CC1=CC=CC(N)=C1 FGWQCROGAHMWSU-UHFFFAOYSA-N 0.000 description 1
- UVUCUHVQYAPMEU-UHFFFAOYSA-N 3-[2-(3-aminophenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]aniline Chemical compound NC1=CC=CC(C(C=2C=C(N)C=CC=2)(C(F)(F)F)C(F)(F)F)=C1 UVUCUHVQYAPMEU-UHFFFAOYSA-N 0.000 description 1
- DVXYMCJCMDTSQA-UHFFFAOYSA-N 3-[2-(3-aminophenyl)propan-2-yl]aniline Chemical compound C=1C=CC(N)=CC=1C(C)(C)C1=CC=CC(N)=C1 DVXYMCJCMDTSQA-UHFFFAOYSA-N 0.000 description 1
- POXPSTWTPRGRDO-UHFFFAOYSA-N 3-[4-(3-aminophenyl)phenyl]aniline Chemical compound NC1=CC=CC(C=2C=CC(=CC=2)C=2C=C(N)C=CC=2)=C1 POXPSTWTPRGRDO-UHFFFAOYSA-N 0.000 description 1
- CRORGGSWAKIXSA-UHFFFAOYSA-N 3-methylbutyl 2-hydroxypropanoate Chemical compound CC(C)CCOC(=O)C(C)O CRORGGSWAKIXSA-UHFFFAOYSA-N 0.000 description 1
- WECDUOXQLAIPQW-UHFFFAOYSA-N 4,4'-Methylene bis(2-methylaniline) Chemical compound C1=C(N)C(C)=CC(CC=2C=C(C)C(N)=CC=2)=C1 WECDUOXQLAIPQW-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- DCSSXQMBIGEQGN-UHFFFAOYSA-N 4,6-dimethylbenzene-1,3-diamine Chemical compound CC1=CC(C)=C(N)C=C1N DCSSXQMBIGEQGN-UHFFFAOYSA-N 0.000 description 1
- LFBALUPVVFCEPA-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)C(C(O)=O)=C1 LFBALUPVVFCEPA-UHFFFAOYSA-N 0.000 description 1
- FWOLORXQTIGHFX-UHFFFAOYSA-N 4-(4-amino-2,3,5,6-tetrafluorophenyl)-2,3,5,6-tetrafluoroaniline Chemical group FC1=C(F)C(N)=C(F)C(F)=C1C1=C(F)C(F)=C(N)C(F)=C1F FWOLORXQTIGHFX-UHFFFAOYSA-N 0.000 description 1
- QYIMZXITLDTULQ-UHFFFAOYSA-N 4-(4-amino-2-methylphenyl)-3-methylaniline Chemical compound CC1=CC(N)=CC=C1C1=CC=C(N)C=C1C QYIMZXITLDTULQ-UHFFFAOYSA-N 0.000 description 1
- RQWJHUJJBYMJMN-UHFFFAOYSA-N 4-(trifluoromethyl)benzene-1,2-diamine Chemical class NC1=CC=C(C(F)(F)F)C=C1N RQWJHUJJBYMJMN-UHFFFAOYSA-N 0.000 description 1
- OMHOXRVODFQGCA-UHFFFAOYSA-N 4-[(4-amino-3,5-dimethylphenyl)methyl]-2,6-dimethylaniline Chemical compound CC1=C(N)C(C)=CC(CC=2C=C(C)C(N)=C(C)C=2)=C1 OMHOXRVODFQGCA-UHFFFAOYSA-N 0.000 description 1
- BEKFRNOZJSYWKZ-UHFFFAOYSA-N 4-[2-(4-aminophenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]aniline Chemical compound C1=CC(N)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(N)C=C1 BEKFRNOZJSYWKZ-UHFFFAOYSA-N 0.000 description 1
- ZYEDGEXYGKWJPB-UHFFFAOYSA-N 4-[2-(4-aminophenyl)propan-2-yl]aniline Chemical compound C=1C=C(N)C=CC=1C(C)(C)C1=CC=C(N)C=C1 ZYEDGEXYGKWJPB-UHFFFAOYSA-N 0.000 description 1
- NVKGJHAQGWCWDI-UHFFFAOYSA-N 4-[4-amino-2-(trifluoromethyl)phenyl]-3-(trifluoromethyl)aniline Chemical group FC(F)(F)C1=CC(N)=CC=C1C1=CC=C(N)C=C1C(F)(F)F NVKGJHAQGWCWDI-UHFFFAOYSA-N 0.000 description 1
- PJWQLRKRVISYPL-UHFFFAOYSA-N 4-[4-amino-3-(trifluoromethyl)phenyl]-2-(trifluoromethyl)aniline Chemical compound C1=C(C(F)(F)F)C(N)=CC=C1C1=CC=C(N)C(C(F)(F)F)=C1 PJWQLRKRVISYPL-UHFFFAOYSA-N 0.000 description 1
- KZSXRDLXTFEHJM-UHFFFAOYSA-N 5-(trifluoromethyl)benzene-1,3-diamine Chemical compound NC1=CC(N)=CC(C(F)(F)F)=C1 KZSXRDLXTFEHJM-UHFFFAOYSA-N 0.000 description 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 description 1
- 229920002284 Cellulose triacetate Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/04—Carbon
- C08K3/041—Carbon nanotubes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/04—Carbon
- C08K3/042—Graphene or derivatives, e.g. graphene oxides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/04—Carbon
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
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- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Laminated Bodies (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Abstract
本發明係提供一種剝離層形成用組成物,其係包含聚醯胺酸、碳系填料、與有機溶劑。 The present invention provides a composition for forming a release layer, which contains polyamide acid, a carbon-based filler, and an organic solvent.
Description
本發明係關於剝離層形成用組成物,若詳細敘述,則為關於用以形成設置於基體上之剝離層的剝離層形成用組成物。 The present invention relates to a composition for forming a release layer, and, if described in detail, it is related to a composition for forming a release layer for forming a release layer provided on a substrate.
近年來,於電子裝置係要求有彎曲之功能賦予或薄型化及輕量化之性能。基於此,要求取代以往之重且脆弱而無法彎曲的玻璃基板,而使用輕量的可撓性塑膠基板。又,於新一代顯示器中係要求有使用輕量的可撓性塑膠基板之自動全彩(active full-color)TFT顯示面板之開發。因此,開始對將樹脂薄膜作為基板之電子裝置的製造方法進行各種探討,於新一代顯示器中係以可轉換既有的TFT設備之製程進行製造探討。 In recent years, electronic devices are required to have the function of bending or the performance of thinner and lighter weight. Based on this, it is required to replace the heavy, fragile and inflexible glass substrate in the past and use a lightweight flexible plastic substrate. In addition, the development of an active full-color TFT display panel using a lightweight flexible plastic substrate is required in the new generation of displays. Therefore, various researches have been conducted on the manufacturing methods of electronic devices using resin films as substrates. In the new generation of displays, the manufacturing process can be converted to existing TFT devices.
專利文獻1、2及3係揭示於玻璃基板上形成非晶矽薄膜層,並於該薄膜層上形成塑膠基板,之後,從玻璃面側照射雷射,藉由伴隨非晶矽之結晶化而發生的氫氣而將塑膠基板從玻璃基板剝離的方法。又,專利文獻4係揭示使用專利文獻1~3揭示之技術來將被剝離層(於專 利文獻4中記載為「被轉印層」)貼附於塑膠薄膜而完成液晶顯示裝置的方法。 Patent Documents 1, 2, and 3 disclose that an amorphous silicon thin film layer is formed on a glass substrate, and a plastic substrate is formed on the thin film layer. After that, a laser is irradiated from the glass surface side to form an amorphous silicon film. A method of peeling the plastic substrate from the glass substrate due to the generated hydrogen. In addition, Patent Document 4 discloses the use of the techniques disclosed in Patent Documents 1 to 3 to remove the peeled layer (in the patent It is described as "transferred layer" in Li Literature 4) is a method of attaching to a plastic film to complete a liquid crystal display device.
但,專利文獻1~4揭示的方法,尤其是專利文獻4揭示的方法係必須使用透光性高的基板,為了對通過基板,進而使非晶質矽中所包含之氫釋出賦予充分的能量,而必須要較大的雷射光之照射,而有對被剝離層造成損傷的問題。又,於雷射處理需要長時間,且將具有大面積之被剝離層進行剝離係為困難,因此,亦有難以提高裝置製作之生產性的問題。 However, the methods disclosed in Patent Documents 1 to 4, especially the method disclosed in Patent Document 4, require the use of a substrate with high light transmittance, in order to pass through the substrate and thereby allow the hydrogen contained in the amorphous silicon to be released sufficiently. Energy, it must be irradiated with a larger laser light, and there is a problem of damage to the peeled layer. In addition, it takes a long time for laser processing, and it is difficult to peel off the peeled layer with a large area. Therefore, there is also a problem that it is difficult to improve the productivity of device manufacturing.
[專利文獻1]日本特開平10-125929號公報 [Patent Document 1] Japanese Patent Laid-Open No. 10-125929
[專利文獻2]日本特開平10-125931號公報 [Patent Document 2] Japanese Patent Application Laid-Open No. 10-125931
[專利文獻3]國際公開第2005/050754號 [Patent Document 3] International Publication No. 2005/050754
[專利文獻4]日本特開平10-125930號公報 [Patent Document 4] Japanese Patent Application Laid-Open No. 10-125930
本發明係鑑於上述情事而完成者,其目的在於提供一種可不對可撓性電子裝置之樹脂基板造成損傷地進行剝離的剝離層形成用組成物。 The present invention was made in view of the above circumstances, and its object is to provide a composition for forming a release layer that can be released without damaging the resin substrate of a flexible electronic device.
本發明者們為了解決上述課題而屢次努力探討的結果,發現由包含聚醯胺酸、碳系填料、與有機溶劑的組成物,可形成具有與基體之優異的密著性及與使用於可撓性電子裝置的樹脂基板之適度的密著性與適度的剝離性之剝離層,而完成本發明。 The inventors of the present invention have repeatedly studied to solve the above-mentioned problems and found that a composition containing polyamide acid, a carbon-based filler, and an organic solvent can be formed to have excellent adhesion to the substrate and to be used in The resin substrate of a flexible electronic device has a suitable adhesion and a suitable peelable peeling layer, and the present invention has been completed.
亦即,本發明係提供1.一種剝離層形成用組成物,其係包含聚醯胺酸、碳系填料、與有機溶劑;2.如1之剝離層形成用組成物,其中,前述聚醯胺酸係使芳香族二胺與芳香族四羧酸二酐反應所得之聚醯胺酸;3.如2之剝離層形成用組成物,其中,前述芳香族二胺係包含1~5個苯核之芳香族二胺;4.如2或3之剝離層形成用組成物,其中,前述芳香族四羧酸二酐係包含1~5個苯核之芳香族四羧酸二酐;5.如1~4中任一項之剝離層形成用組成物,其中,前述碳系填料係奈米碳管或石墨烯;6.一種剝離層,其係使用如1~5中任一項之剝離層形成用組成物所形成;7.一種具備樹脂基板之可撓性電子裝置的製造方法,其特徵為使用如6之剝離層;8.如7之製造方法,其中,前述樹脂基板係由聚醯亞胺所構成之基板。 That is, the present invention provides 1. A composition for forming a peeling layer, which contains polyamide acid, a carbon-based filler, and an organic solvent; 2. The composition for forming a peeling layer according to 1, wherein the aforementioned polyamide Amino acid is a polyamide acid obtained by reacting an aromatic diamine with an aromatic tetracarboxylic dianhydride; 3. The composition for forming a peeling layer as described in 2, wherein the aforementioned aromatic diamine contains 1 to 5 benzene Core aromatic diamine; 4. The composition for forming a peeling layer as 2 or 3, wherein the aforementioned aromatic tetracarboxylic dianhydride is an aromatic tetracarboxylic dianhydride containing 1 to 5 benzene nuclei; 5. Such as the composition for forming a peeling layer of any one of 1 to 4, wherein the aforementioned carbon-based filler is carbon nanotube or graphene; 6. A peeling layer using any one of 1 to 5 7. A method for manufacturing a flexible electronic device with a resin substrate, characterized by using a peeling layer as described in 6; 8. The method of manufacturing as described in 7, wherein the resin substrate is made of poly Substrate composed of imine.
藉由使用本發明之剝離層形成用組成物,而可再現性佳地得到具有與基體之優異的密著性及與樹脂基板之適度的密著性與適度的剝離性之膜。藉由使用如此之組成物,於可撓性電子裝置之製造製程中,成為可不對形成於基體上之樹脂基板、或進而設置於其上之電路等造成損傷,而將該樹脂基板與該電路等一起從該基體分離。因而,本發明之剝離層形成用組成物係可對具備樹脂基板之可撓性電子裝置的製造製程之簡化或其良率提昇等有所貢獻。 By using the composition for forming a release layer of the present invention, a film having excellent adhesion to the substrate and moderate adhesion to the resin substrate and moderate releasability can be obtained with good reproducibility. By using such a composition, in the manufacturing process of a flexible electronic device, the resin substrate formed on the substrate or the circuit provided on the substrate can be prevented from damaging the resin substrate and the circuit. Separate from the substrate together. Therefore, the composition for forming a release layer of the present invention can contribute to the simplification of the manufacturing process of the flexible electronic device with the resin substrate or the improvement of its yield.
以下,針對本發明更詳細地說明。 Hereinafter, the present invention will be described in more detail.
本發明之剝離層形成用組成物係包含聚醯胺酸、碳系填料、與有機溶劑。在此,本發明之剝離層係指在既定的目的下被設置於玻璃基體正上方的層,作為其典型例係可列舉:於可撓性電子裝置之製造製程中,在基體與由聚醯亞胺之樹脂所構成的可撓性電子裝置之樹脂基板之間為了使該樹脂基板於既定的製程中為固定所設置,且,於該樹脂基板上形成電子電路等之後,為了使該樹脂基板可容易從該基體剝離所設置的剝離層。 The composition system for forming a release layer of the present invention contains polyamide acid, a carbon-based filler, and an organic solvent. Here, the peeling layer of the present invention refers to a layer that is set directly above the glass substrate for a predetermined purpose. As a typical example, it can be cited: in the manufacturing process of flexible electronic devices, the substrate and the polyamide Between the resin substrates of the flexible electronic device composed of imine resin, the resin substrate is fixed in a predetermined process, and after the electronic circuit is formed on the resin substrate, in order to make the resin substrate The provided release layer can be easily peeled from the substrate.
本發明所使用之聚醯胺酸並無特別限定,雖為可使二胺與四羧酸二酐反應所得者,但就使所得到的膜之作為剝離層的功能性提昇之觀點而言,較佳為使芳香族 二胺與芳香族四羧酸二酐反應所得之聚醯胺酸。 The polyamide acid used in the present invention is not particularly limited. Although it can be obtained by reacting diamine with tetracarboxylic dianhydride, from the viewpoint of improving the functionality of the resulting film as a release layer, It is better to make aromatic Polyamide acid obtained by the reaction of diamine and aromatic tetracarboxylic dianhydride.
作為芳香族二胺雖只要於分子內具有2個胺基,且具有芳香環則無特別限定,但較佳為包含1~5個苯核之芳香族二胺。 The aromatic diamine is not particularly limited as long as it has two amino groups in the molecule and an aromatic ring, but it is preferably an aromatic diamine containing 1 to 5 benzene nuclei.
作為其具體例係可列舉:1,4-二胺基苯(p-苯二胺)、1,3-二胺基苯(m-苯二胺)、1,2-二胺基苯(o-苯二胺)、2,4-二胺基甲苯、2,5-二胺基甲苯、2,6-二胺基甲苯、4,6-二甲基-m-苯二胺、2,5-二甲基-p-苯二胺、2,6-二甲基-p-苯二胺、2,4,6-三甲基-1,3-苯二胺、2,3,5,6-四甲基-p-苯二胺、m-茬二胺、p-茬二胺、5-三氟甲基苯-1,3-二胺、5-三氟甲基苯-1,2-二胺、3,5-雙(三氟甲基)苯-1,2-二胺等之苯核為1個的二胺;1,2-萘二胺、1,3-萘二胺、1,4-萘二胺、1,5-萘二胺、1,6-萘二胺、1,7-萘二胺、1,8-萘二胺、2,3-萘二胺、2,6-萘二胺、4,4’-聯苯二胺、2,2’-雙(三氟甲基)-4,4’-二胺基聯苯、3,3’-二甲基-4,4’-二胺基二苯基甲烷、3,3’-二羧-4,4’-二胺基二苯基甲烷、3,3’,5,5’-四甲基-4,4’-二胺基二苯基甲烷、4,4’-二胺基苯甲醯苯胺、3,3’-二氯聯苯胺、3,3’-二甲基聯苯胺、2,2’-二甲基聯苯胺、3,3’-二胺基二苯基甲烷、3,4’-二胺基二苯基甲烷、4,4’-二胺基二苯基甲烷、2,2-雙(3-胺基苯基)丙烷、2,2-雙(4-胺基苯基)丙烷、2,2-雙(3-胺基苯基)-1,1,1,3,3,3-六氟丙烷、2,2-雙(4-胺基苯基)-1,1,1,3,3,3-六氟丙烷、3,3’-二胺基二苯基亞碸、3,4’-二胺基二苯基亞碸、4,4’-二胺基二苯基亞碸、3,3’-雙(三氟甲基)聯苯-4,4’-二胺、3,3’,5,5’-四 氟聯苯-4,4’-二胺、4,4’-二胺基八氟聯苯、2-(3-胺基苯基)-5-胺基苯并咪唑、2-(4-胺基苯基)-5-胺基苯并噁唑等之苯核為2個的二胺;1,5-二胺基蒽、2,6-二胺基蒽、9,10-二胺基蒽、1,8-二胺基菲、2,7-二胺基菲、3,6-二胺基菲、9,10-二胺基菲、1,3-雙(3-胺基苯基)苯、1,3-雙(4-胺基苯基)苯、1,4-雙(3-胺基苯基)苯、1,4-雙(4-胺基苯基)苯、1,3-雙(3-胺基苯基硫化物)苯、1,3-雙(4-胺基苯基硫化物)苯、1,4-雙(4-胺基苯基硫化物)苯、1,3-雙(3-胺基苯基碸)苯、1,3-雙(4-胺基苯基碸)苯、1,4-雙(4-胺基苯基碸)苯、1,3-雙[2-(4-胺基苯基)異丙基]苯、1,4-雙[2-(3-胺基苯基)異丙基]苯、1,4-雙[2-(4-胺基苯基)異丙基]苯、4,4”-二胺基-p-聯三苯、4,4”-二胺基-m-聯三苯等之苯核為3個的二胺等,但並不限定於此等。此等係可單獨,亦可將2種以上組合使用。 Specific examples include 1,4-diaminobenzene (p-phenylenediamine), 1,3-diaminobenzene (m-phenylenediamine), 1,2-diaminobenzene (o -Phenylenediamine), 2,4-diaminotoluene, 2,5-diaminotoluene, 2,6-diaminotoluene, 4,6-dimethyl-m-phenylenediamine, 2,5 -Dimethyl-p-phenylenediamine, 2,6-dimethyl-p-phenylenediamine, 2,4,6-trimethyl-1,3-phenylenediamine, 2,3,5,6 -Tetramethyl-p-phenylenediamine, m-diamine, p-diamine, 5-trifluoromethylbenzene-1,3-diamine, 5-trifluoromethylbenzene-1,2- Diamines, 3,5-bis(trifluoromethyl)benzene-1,2-diamine, etc. whose benzene nucleus is one diamine; 1,2-naphthalenediamine, 1,3-naphthalenediamine, 1 ,4-Naphthalene diamine, 1,5-naphthalene diamine, 1,6-naphthalene diamine, 1,7-naphthalene diamine, 1,8-naphthalene diamine, 2,3-naphthalene diamine, 2,6 -Naphthalenediamine, 4,4'-diphenyldiamine, 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl, 3,3'-dimethyl-4, 4'-Diaminodiphenylmethane, 3,3'-Dicarboxy-4,4'-Diaminodiphenylmethane, 3,3',5,5'-Tetramethyl-4,4' -Diaminodiphenylmethane, 4,4'-diaminobenzaniline, 3,3'-dichlorobenzidine, 3,3'-dimethylbenzidine, 2,2'-dimethyl Benzidine, 3,3'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane, 2,2-bis(3 -Aminophenyl)propane, 2,2-bis(4-aminophenyl)propane, 2,2-bis(3-aminophenyl)-1,1,1,3,3,3-hexa Fluoropropane, 2,2-bis(4-aminophenyl)-1,1,1,3,3,3-hexafluoropropane, 3,3'-diaminodiphenyl sulfene, 3,4 '-Diaminodiphenyl sulfene, 4,4'-diaminodiphenyl sulfene, 3,3'-bis(trifluoromethyl)biphenyl-4,4'-diamine, 3, 3',5,5'-four Fluorobiphenyl-4,4'-diamine, 4,4'-diaminooctafluorobiphenyl, 2-(3-aminophenyl)-5-aminobenzimidazole, 2-(4-amine Phenyl)-5-aminobenzoxazole and other diamines with two benzene nuclei; 1,5-diaminoanthracene, 2,6-diaminoanthracene, 9,10-diaminoanthracene , 1,8-diaminophenanthrene, 2,7-diaminophenanthrene, 3,6-diaminophenanthrene, 9,10-diaminophenanthrene, 1,3-bis(3-aminophenyl) Benzene, 1,3-bis(4-aminophenyl)benzene, 1,4-bis(3-aminophenyl)benzene, 1,4-bis(4-aminophenyl)benzene, 1,3 -Bis(3-aminophenylsulfide)benzene, 1,3-bis(4-aminophenylsulfide)benzene, 1,4-bis(4-aminophenylsulfide)benzene, 1, 3-bis(3-aminophenyl)benzene, 1,3-bis(4-aminophenyl)benzene, 1,4-bis(4-aminophenyl)benzene, 1,3- Bis[2-(4-aminophenyl)isopropyl]benzene, 1,4-bis[2-(3-aminophenyl)isopropyl]benzene, 1,4-bis[2-(4 -Aminophenyl)isopropyl]benzene, 4,4"-diamino-p-terphenyl, 4,4"-diamino-m-terphenyl, etc. The benzene nuclei are three diphenylene nuclei Amine etc., but it is not limited to these. These systems may be used alone or in combination of two or more types.
其中,就使所得之膜之作為剝離層的功能性提昇之觀點而言,較佳為僅由在芳香環及與其進行縮合之雜環上不具有甲基等之取代基的芳香族環及雜芳香族環所構成之芳香族二胺。具體而言,較佳為p-苯二胺、m-苯二胺、2-(3-胺基苯基)-5-胺基苯并咪唑環、2-(4-胺基苯基)-5-胺基苯并噁唑、4,4”-二胺基-p-聯三苯等。 Among them, from the viewpoint of improving the functionality of the resulting film as a release layer, it is preferable to include only aromatic rings and heterocyclic rings that do not have substituents such as methyl groups on the aromatic ring and the heterocyclic ring condensed therewith. Aromatic diamine composed of aromatic ring. Specifically, p-phenylenediamine, m-phenylenediamine, 2-(3-aminophenyl)-5-aminobenzimidazole ring, 2-(4-aminophenyl)- 5-aminobenzoxazole, 4,4"-diamino-p-terphenyl, etc.
於本發明中,芳香族二胺之使用量係全二胺中,較佳為70莫耳%以上,更佳為80莫耳%以上,再更佳為90莫耳%以上,又再更佳為95莫耳%以上,最佳為100莫耳%。藉由採用如此之使用量,而可再現性佳地得 到具有與基體之優異的密著性及與樹脂基板之適度的密著性與適度的剝離性之膜。 In the present invention, the amount of aromatic diamine used is the total diamine, preferably 70 mol% or more, more preferably 80 mol% or more, still more preferably 90 mol% or more, and still more preferably It is 95 mol% or more, and the best is 100 mol%. By using such a usage amount, the reproducibility is excellent To a film with excellent adhesion to the substrate, moderate adhesion to the resin substrate, and moderate releasability.
作為芳香族四羧酸二酐雖只要於分子內具有2個二羧酸酐部位,且具有芳香環則無特別限定,但較佳為包含1~5個苯核之芳香族四羧酸二酐。 The aromatic tetracarboxylic dianhydride is not particularly limited as long as it has two dicarboxylic anhydride sites in the molecule and an aromatic ring, but it is preferably an aromatic tetracarboxylic dianhydride containing 1 to 5 benzene nuclei.
其具體例係可列舉:苯均四酸二酐、苯-1,2,3,4-四羧酸二酐、萘-1,2,3,4-四羧酸二酐、萘-1,2,5,6-四羧酸二酐、萘-1,2,6,7-四羧酸二酐、萘-1,2,7,8-四羧酸二酐、萘-2,3,5,6-四羧酸二酐、萘-2,3,6,7-四羧酸二酐、萘-1,4,5,8-四羧酸二酐、聯苯-2,2’,3,3’-四羧酸二酐、聯苯-2,3,3’,4’-四羧酸二酐、聯苯-3,3’,4,4’-四羧酸二酐、蒽-1,2,3,4-四羧酸二酐、蒽-1,2,5,6-四羧酸二酐、蒽-1,2,6,7-四羧酸二酐、蒽-1,2,7,8-四羧酸二酐、蒽-2,3,6,7-四羧酸二酐、菲(phenanthrene)-1,2,3,4-四羧酸二酐、菲(phenanthrene)-1,2,5,6-四羧酸二酐、菲(phenanthrene)-1,2,6,7-四羧酸二酐、菲(phenanthrene)-1,2,7,8-四羧酸二酐、菲(phenanthrene)-1,2,9,10-四羧酸二酐、菲(phenathracene)-2,3,5,6-四羧酸二酐、菲(phenanthrene)-2,3,6,7-四羧酸二酐、菲(phenanthrene)-2,3,9,10-四羧酸二酐、菲(phenanthrene)-3,4,5,6-四羧酸二酐、菲(phenanthrene)-3,4,9,10-四羧酸二酐等,但並不限定於此等。此等係可單獨,亦可將2種以上組合使用。 Specific examples include: pyromellitic dianhydride, benzene-1,2,3,4-tetracarboxylic dianhydride, naphthalene-1,2,3,4-tetracarboxylic dianhydride, naphthalene-1, 2,5,6-tetracarboxylic dianhydride, naphthalene-1,2,6,7-tetracarboxylic dianhydride, naphthalene-1,2,7,8-tetracarboxylic dianhydride, naphthalene-2,3, 5,6-tetracarboxylic dianhydride, naphthalene-2,3,6,7-tetracarboxylic dianhydride, naphthalene-1,4,5,8-tetracarboxylic dianhydride, biphenyl-2,2', 3,3'-tetracarboxylic dianhydride, biphenyl-2,3,3',4'-tetracarboxylic dianhydride, biphenyl-3,3',4,4'-tetracarboxylic dianhydride, anthracene -1,2,3,4-tetracarboxylic dianhydride, anthracene-1,2,5,6-tetracarboxylic dianhydride, anthracene-1,2,6,7-tetracarboxylic dianhydride, anthracene-1 ,2,7,8-tetracarboxylic dianhydride, anthracene-2,3,6,7-tetracarboxylic dianhydride, phenanthrene-1,2,3,4-tetracarboxylic dianhydride, phenanthrene ( phenanthrene)-1,2,5,6-tetracarboxylic dianhydride, phenanthrene-1,2,6,7-tetracarboxylic dianhydride, phenanthrene-1,2,7,8-tetra Carboxylic dianhydride, phenanthrene-1,2,9,10-tetracarboxylic dianhydride, phenathracene-2,3,5,6-tetracarboxylic dianhydride, phenanthrene-2, 3,6,7-tetracarboxylic dianhydride, phenanthrene-2,3,9,10-tetracarboxylic dianhydride, phenanthrene-3,4,5,6-tetracarboxylic dianhydride, Phenanthrene-3,4,9,10-tetracarboxylic dianhydride, etc., but not limited to these. These systems may be used alone or in combination of two or more types.
其中,就使所得之膜之作為剝離層的功能性提昇之觀點而言,較佳係苯核為1個或2個的芳香族羧酸 二酐。具體而言較佳係以式(C1)~(C12)之任一式所示之芳香族四羧酸二酐,更佳係以式(C1)~(C7)及(C9)~(C11)之任一式所示之芳香族四羧酸二酐。 Among them, from the viewpoint of improving the functionality of the resulting film as a release layer, an aromatic carboxylic acid having one or two benzene nuclei is preferred Dianhydride. Specifically, it is preferably an aromatic tetracarboxylic dianhydride represented by any one of formulas (C1) to (C12), and more preferably one of formulas (C1) to (C7) and (C9) to (C11) Aromatic tetracarboxylic dianhydride represented by any formula.
於本發明中,芳香族四羧酸二酐之使用量係全四羧酸二酐中,較佳為70莫耳%以上,更佳為80莫耳%以上,再更佳為90莫耳%以上,又再更佳為95莫耳%以上,最佳為100莫耳%。藉由採用如此之使用量,而可再現性佳地得到具有與基體之優異的密著性及與樹脂基板之適度的密著性與適度的剝離性之膜。 In the present invention, the amount of aromatic tetracarboxylic dianhydride used is in total tetracarboxylic dianhydride, preferably 70 mol% or more, more preferably 80 mol% or more, and still more preferably 90 mol% Above, more preferably 95 mol% or more, and most preferably 100 mol%. By using such a usage amount, a film with excellent adhesion to the substrate and moderate adhesion to the resin substrate and moderate releasability can be obtained with good reproducibility.
藉由使以上說明之二胺與四羧酸二酐進行反應,而可得到本發明之剝離層形成用組成物所包含之聚醯胺酸。 By reacting the diamine described above with tetracarboxylic dianhydride, the polyamide acid contained in the composition for forming a release layer of the present invention can be obtained.
前述聚醯胺酸之重量平均分子量較佳為5,000~1,000,000,更佳為10,000~500,000,就操作性的觀點而言,再更佳為15,000~200,000。另外,於本發明中,重量平均分子量係以凝膠滲透層析法(GPC)進行之標準聚 苯乙烯換算所得之平均分子量。 The weight average molecular weight of the aforementioned polyamide acid is preferably 5,000 to 1,000,000, more preferably 10,000 to 500,000, and even more preferably 15,000 to 200,000 from the viewpoint of operability. In addition, in the present invention, the weight-average molecular weight is a standard polymerization method performed by gel permeation chromatography (GPC). Average molecular weight calculated from styrene.
於如此之反應中所使用的有機溶劑雖只要不對反應造成不良影響則無特別限定,但其具體例係可列舉:m-甲酚、2-吡咯啶酮、N-甲基-2-吡咯啶酮、N-乙基-2-吡咯啶酮、N-乙烯基-2-吡咯啶酮、N,N-二甲基乙醯胺、N,N-二甲基甲醯胺、3-甲氧基-N,N-二甲基丙基醯胺、3-乙氧基-N,N-二甲基丙基醯胺、3-丙氧基-N,N-二甲基丙基醯胺、3-異丙氧基-N,N-二甲基丙基醯胺、3-丁氧基-N,N-二甲基丙基醯胺、3-sec-丁氧基-N,N-二甲基丙基醯胺、3-tert-丁氧基-N,N-二甲基丙基醯胺、γ-丁內酯等。另外,有機溶劑係可1種單獨,或者將2種以上組合使用。 The organic solvent used in such a reaction is not particularly limited as long as it does not adversely affect the reaction, but specific examples include: m-cresol, 2-pyrrolidone, and N-methyl-2-pyrrolidine Ketone, N-ethyl-2-pyrrolidone, N-vinyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, 3-methoxy Group-N,N-dimethylpropylamide, 3-ethoxy-N,N-dimethylpropylamide, 3-propoxy-N,N-dimethylpropylamide, 3-isopropoxy-N,N-dimethylpropylamide, 3-butoxy-N,N-dimethylpropylamide, 3-sec-butoxy-N,N-di Methyl propyl amide, 3-tert-butoxy-N,N-dimethyl propyl amide, γ-butyrolactone, etc. In addition, the organic solvent system may be used alone or in combination of two or more kinds.
反應溫度係只要在從所使用之溶劑的熔點至沸點的範圍內適當設定即可,通常為0~100℃左右,但為了防止在所得之聚醯胺酸的溶液中之醯亞胺化,維持聚醯胺酸單位之高含量,較佳為0~70℃左右,更佳為0~60℃左右,再更佳為0~50℃左右。 The reaction temperature should be appropriately set within the range from the melting point to the boiling point of the solvent used, and it is usually about 0 to 100°C. However, in order to prevent the imidization of the resulting polyamide acid solution, it is maintained The high content of the polyamide unit is preferably about 0 to 70°C, more preferably about 0 to 60°C, and still more preferably about 0 to 50°C.
反應時間係取決於反應溫度或原料物質之反應性而無法一概規定,但通常為1~100小時左右。 The reaction time depends on the reaction temperature or the reactivity of the raw materials and cannot be specified, but it is usually about 1 to 100 hours.
本發明所使用之碳系填料雖只要是以碳原子作為主成分者則無特別限定,但較佳為纖維狀碳材料、層狀碳材料、粒子狀碳材料。另外,此等之碳系填料係可分別單獨,或者2種以上組合使用。 Although the carbon-based filler used in the present invention is not particularly limited as long as it has carbon atoms as a main component, it is preferably a fibrous carbon material, a layered carbon material, and a particulate carbon material. In addition, these carbon-based filler systems may be used alone or in combination of two or more types.
作為纖維狀碳材料之具體例雖可列舉:奈米碳管(CNT)、碳奈米纖維(CNF)等,但就分散性、取得性 等之觀點而言,較佳為CNT。CNT一般而言係藉由電弧放電法、化學氣相成長法(CVD法)、雷射剝蝕法等所製作,但使用於本發明之CNT係以任何方法所得者皆可。又,CNT雖有1片碳膜(石墨烯薄片)被捲成圓筒狀的單層CNT(以下,亦簡稱為SWCNT)、2片石墨烯薄片被捲成同心圓狀的2層CNT(以下,亦簡稱為DWCNT)、以及複數片石墨烯薄片被捲成同心圓狀的多層CNT(MWCNT),但於本發明中係可將SWCNT、DWCNT、MWCNT各自單體或者將複數個組合而使用。 Specific examples of fibrous carbon materials include carbon nanotubes (CNT), carbon nanofibers (CNF), etc., but in terms of dispersibility and availability From the viewpoint of others, CNT is preferred. CNTs are generally produced by arc discharge method, chemical vapor growth method (CVD method), laser ablation method, etc. However, the CNT used in the present invention can be obtained by any method. In addition, although CNT has a single carbon film (graphene sheet) rolled into a cylindrical single-layer CNT (hereinafter also referred to as SWCNT), two graphene sheets are rolled into a concentric two-layer CNT (hereinafter referred to as SWCNT). , Also abbreviated as DWCNT), and a multi-layered CNT (MWCNT) in which a plurality of graphene sheets are rolled into concentric circles. However, in the present invention, SWCNT, DWCNT, and MWCNT can be used individually or in combination.
另外,在以上述方法製作SWCNT、DWCNT、MWCNT時,由於有時鎳、鐵、鈷、釔等之觸媒金屬亦會殘留,因此有必須進行用以去除此雜質之純化的情況。於雜質之去除中,以硝酸、硫酸等所進行之酸處理與超音波處理一起係為有效。但於以硝酸、硫酸等所進行之酸處理中,構成CNT之π共軛系會被破壞,而有導致CNT本來的特性受損之可能性,因此,較理想為以適當的條件進行純化而使用。 In addition, when SWCNT, DWCNT, and MWCNT are produced by the above-mentioned method, since catalyst metals such as nickel, iron, cobalt, and yttrium may also remain, it may be necessary to perform purification to remove these impurities. In the removal of impurities, acid treatment with nitric acid, sulfuric acid, etc. together with ultrasonic treatment is effective. However, in acid treatment with nitric acid, sulfuric acid, etc., the π-conjugated system constituting the CNT may be destroyed, and the original characteristics of the CNT may be impaired. Therefore, it is better to purify under appropriate conditions. use.
作為層狀碳材料之具體例係可列舉:石墨、石墨烯等。針對石墨並無特別限制,可使用市售之各種石墨。石墨烯係指1原子之厚度的sp2鍵結碳原子之薄片,且為由碳原子與其鍵所成之如同蜂巢般的六角形晶格構造,而其厚度為0.38nm左右。又,除了市售之氧化石墨烯以外,亦可使用將石墨藉由Hummers法進行處理所得之氧化石墨烯。 As specific examples of the layered carbon material, graphite, graphene, etc. can be cited. There are no special restrictions on graphite, and various commercially available graphites can be used. Graphene refers to a sheet of sp2 bonded carbon atoms with a thickness of 1 atom, and is a honeycomb-like hexagonal lattice structure formed by carbon atoms and their bonds, and its thickness is about 0.38 nm. Moreover, in addition to commercially available graphene oxide, graphene oxide obtained by treating graphite by the Hummers method can also be used.
作為粒子狀碳材料之具體例係可列舉:爐黑、槽黑、乙炔碳、熱碳黑等之碳黑等。針對碳黑並無特別限制,可使用市售之各種碳黑,其粒徑較佳為5~500nm。 Specific examples of the particulate carbon material include carbon black such as furnace black, channel black, acetylene carbon, and thermal black. There are no special restrictions on carbon black, and various commercially available carbon blacks can be used, and the particle size is preferably 5 to 500 nm.
本發明之剝離層形成用組成物中之聚醯胺酸與碳系填料的比,雖以質量比計,對聚醯胺酸1而言為碳系填料0.001~0.1左右,但較佳為0.005~0.05左右,更佳為0.01~0.02左右。 The ratio of the polyamide acid to the carbon-based filler in the composition for forming a release layer of the present invention is about 0.001 to 0.1 for the polyamide acid 1 in terms of mass ratio, but is preferably 0.005 ~0.05 or so, more preferably 0.01~0.02 or so.
本發明之剝離層形成用組成物係包含有機溶劑者。作為此有機溶劑係可列舉與上述反應之反應溶劑的具體例相同者。其中,就將聚醯胺酸均勻溶解,而容易調製均勻性高的組成物之觀點而言,較佳為N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、N-甲基-2-吡咯啶酮、1,3-二甲基-2-咪唑啶酮、N-乙基-2-吡咯啶酮、γ-丁內酯,更佳為N-甲基-2-吡咯啶酮。 The composition for forming a release layer of the present invention contains an organic solvent. As this organic solvent system, the same thing as the specific example of the reaction solvent of the said reaction is mentioned. Among them, from the viewpoint of dissolving polyamide acid uniformly and easily preparing a composition with high uniformity, N,N-dimethylformamide, N,N-dimethylacetamide, N-methyl-2-pyrrolidone, 1,3-dimethyl-2-imidazolidone, N-ethyl-2-pyrrolidone, γ-butyrolactone, more preferably N-methyl- 2-pyrrolidone.
另外,即使單獨時為不溶解聚醯胺酸的溶劑,只要在聚醯胺酸不析出的範圍,即可使用於組成物之調製。尤其,可使乙基賽路蘇、丁基賽路蘇、乙基卡必醇、丁基卡必醇、乙基卡必醇乙酸酯、乙二醇、1-甲氧基-2-丙醇、1-乙氧基-2-丙醇、1-丁氧基-2-丙醇、1-苯氧基-2-丙醇、丙二醇單乙酸酯、丙二醇二乙酸酯、丙二醇-1-單甲基醚-2-乙酸酯、丙二醇-1-單乙基醚-2-乙酸酯、二丙二醇、2-(2-乙氧基丙氧基)丙醇、乳酸甲酯、乳酸乙酯、乳酸n-丙酯、乳酸n-丁酯、乳酸異戊酯等之具有低表面張 力的溶劑適度地混合存在。藉此,已知在對基板塗佈時塗膜均勻性會提昇,於本發明中亦可適宜使用。 In addition, even if it is a solvent that does not dissolve polyamic acid when it is alone, it can be used for the preparation of a composition as long as it is in a range where polyamic acid does not precipitate. In particular, it can make ethyl siloxol, butyl siloxol, ethyl carbitol, butyl carbitol, ethyl carbitol acetate, ethylene glycol, 1-methoxy-2-propane Alcohol, 1-ethoxy-2-propanol, 1-butoxy-2-propanol, 1-phenoxy-2-propanol, propylene glycol monoacetate, propylene glycol diacetate, propylene glycol-1 -Monomethyl ether-2-acetate, propylene glycol-1-monoethyl ether-2-acetate, dipropylene glycol, 2-(2-ethoxypropoxy)propanol, methyl lactate, lactic acid Ethyl, n-propyl lactate, n-butyl lactate, isoamyl lactate, etc. have low surface tension Strong solvents are mixed in moderately. Thereby, it is known that the uniformity of the coating film is improved when coating a substrate, and it can also be suitably used in the present invention.
本發明之剝離層形成用組成物的調製方法係任意。作為調製方法之較佳的一例係可列舉:將藉由上述已說明之方法所得到之作為目的之包含聚醯胺酸的反應溶液進行過濾,於所得到的濾液中添加碳系填料,而施行分散處理的方法。此時,亦可以濃度調整等為目的,若有必要則將濾液進行稀釋或濃縮。藉由採用如此之方法,不僅可減低由所得之組成物製造的剝離層之可能成為密著性、剝離性等之惡化的原因之雜質的混入,亦可有效率地得到剝離層形成用組成物。 The method of preparing the composition for forming a release layer of the present invention is arbitrary. A preferable example of the preparation method is: filtering the intended reaction solution containing polyamide acid obtained by the above-described method, and adding a carbon-based filler to the obtained filtrate to perform Distributed processing method. At this time, the purpose of concentration adjustment etc. can also be used, and if necessary, the filtrate may be diluted or concentrated. By adopting such a method, it is possible not only to reduce the mixing of impurities that may cause deterioration of adhesion, releasability, etc., in the peeling layer produced from the obtained composition, but also to efficiently obtain a composition for forming a peeling layer .
作為分散處理係可列舉機械性處理之使用球磨機、珠磨機、噴射磨機等的濕式處理,或匯流排型或探針型之超音波振盪器的超音波處理。分散處理之時間雖為任意,但較佳為1分鐘至10小時左右,更佳為5分鐘至5小時左右。另外,分散處理時,亦可因應需要而施行加熱處理。又,作為稀釋所使用之溶劑並無特別限定,作為其具體例係可列舉與上述反應之反應溶劑之具體例相同者。稀釋所使用之溶劑係可1種單獨或者將2種以上組合使用。 Examples of the dispersion treatment system include mechanical treatment, wet treatment using a ball mill, bead mill, jet mill, etc., or ultrasonic treatment using a bus-bar type or probe type ultrasonic oscillator. Although the time of the dispersion treatment is arbitrary, it is preferably about 1 minute to 10 hours, and more preferably about 5 minutes to 5 hours. In addition, in the case of dispersing treatment, heating treatment can also be performed as needed. In addition, the solvent used for dilution is not particularly limited, and specific examples thereof include those similar to the specific examples of the reaction solvent of the above-mentioned reaction. The solvent used for dilution can be used alone or in combination of two or more.
於本發明之剝離層形成用組成物中之聚醯胺酸的濃度雖有考量所製作之剝離層的厚度、組成物的黏度等來適當設定者,但通常為1~30質量%左右,較佳為1~20質量%左右。藉由設為如此之濃度,而可再現性佳地 得到0.05~5μm左右之厚度的剝離層。聚醯胺酸的濃度係可調整作為聚醯胺酸之原料的二胺與四羧酸二酐的使用量,使分離之聚醯胺酸溶解於溶劑時調整其量等來進行調整。 Although the concentration of polyamide acid in the composition for forming a release layer of the present invention is appropriately set in consideration of the thickness of the release layer to be produced, the viscosity of the composition, etc., it is usually about 1 to 30% by mass, which is relatively high. Preferably, it is about 1-20% by mass. By setting such a density, the reproducibility is good A peeling layer with a thickness of about 0.05~5μm is obtained. The concentration of polyamic acid can be adjusted by adjusting the amount of diamine and tetracarboxylic dianhydride used as raw materials of polyamic acid, and adjusting the amount when dissolving the separated polyamic acid in a solvent.
又,本發明之剝離層形成用組成物的黏度雖有考量所製作之剝離層的厚度等來適當設定者,但尤其是在以再現性佳地得到0.05~5μm左右之厚度的膜作為目的之情況,通常在25℃下為10~10,000mPa‧s左右,較佳為20~5,000mPa‧s左右。在此,黏度係可使用市售之液體的黏度測定用黏度計,例如,參照JIS K7117-2記載的程序,以組成物之溫度25℃的條件進行測定。較佳為,作為黏度計係使用圓錐平板型(錐板型)旋轉黏度計,較佳係可以同型之黏度計並使用1°34’×R24作為標準錐形轉子,以組成物之溫度25℃的條件進行測定。作為如此之旋轉黏度計係可列舉例如:東機產業股份有限公司製TVE-25L。 In addition, although the viscosity of the composition for forming a release layer of the present invention can be appropriately set in consideration of the thickness of the release layer to be produced, it is particularly aimed at obtaining a film with a thickness of about 0.05 to 5 μm with good reproducibility. In the case, it is usually about 10~10,000mPa‧s at 25°C, preferably about 20~5,000mPa‧s. Here, the viscosity can be measured with a viscometer for measuring the viscosity of a commercially available liquid, for example, by referring to the procedure described in JIS K7117-2, the temperature of the composition is measured at 25°C. Preferably, a conical plate type (cone plate type) rotary viscometer is used as a viscometer, and a viscometer of the same type is preferably used and 1°34'×R24 is used as a standard cone rotor. The temperature of the composition is 25°C. The conditions are measured. Examples of such a rotational viscometer system include TVE-25L manufactured by Toki Sangyo Co., Ltd.
另外,本發明之剝離層形成用組成物係除了聚醯胺酸與有機溶劑以外,例如,亦可為了提昇膜強度而包含交聯劑等。 In addition, the composition system for forming a release layer of the present invention may contain a crosslinking agent and the like in addition to polyamide acid and an organic solvent, for example, in order to increase the film strength.
將以上所說明之本發明之剝離層形成組成物塗佈於基體,將所得之塗膜進行加熱來將聚醯胺酸進行熱醯亞胺化,藉此可得到具有與基體之優異的密著性及與樹脂基板之適度的密著性與適度的剝離性之由聚醯亞胺膜所構成的剝離層。 The release layer forming composition of the present invention described above is applied to a substrate, and the resulting coating film is heated to thermally imidize polyamide acid, thereby obtaining excellent adhesion to the substrate It is a peeling layer made of polyimide film with proper adhesion to the resin substrate and proper peelability.
在將如此之本發明的剝離層形成於基體上的 情況,剝離層係可形成於基體的一部分表面,亦可形成於全面。作為於基體的一部分表面形成剝離層之樣態係有僅於基體表面中之既定的範圍形成剝離層之樣態、於基板表面全面呈點圖型、線與空間圖型等之圖型狀形成剝離層之樣態等。另外,於本發明中,基體係意味著於其表面塗佈本發明之剝離層形成用組成物者,且被使用於可撓性電子裝置等之製造者。 In such a case where the release layer of the present invention is formed on the substrate In some cases, the peeling layer may be formed on a part of the surface of the substrate, or may be formed on the entire surface. As a form of forming a peeling layer on a part of the surface of the substrate, there are forms of forming a peeling layer only on a predetermined area on the surface of the substrate, and pattern formation such as dot pattern, line and space pattern on the whole surface of the substrate. The appearance of the peeled layer, etc. In addition, in the present invention, the base system means one that coats the release layer forming composition of the present invention on the surface thereof, and is used by manufacturers of flexible electronic devices and the like.
作為基體(基材)雖可列舉例如:玻璃、塑膠(聚碳酸酯、聚甲基丙烯酸酯、聚苯乙烯、聚酯、聚烯烴、環氧、三聚氰胺、三乙醯纖維素、ABS、AS、降冰片烯系樹脂等)、金屬(矽晶圓等)、木材、紙、板岩等,但尤其就本發明之剝離層具有對於其之充分的密著性之觀點而言,以玻璃為佳。另外,基體表面係可由單一材料所構成,亦可由2種以上之材料所構成。作為由2種以上之材料構成基體表面的樣態係有基體表面中之某範圍由某材料所構成,其餘表面由其他材料所構成的樣態、於基體表面全體位於點圖型、線與空間圖型等之圖型狀的材料為存在於其他材料中的樣態等。 Examples of substrates (substrates) include glass, plastics (polycarbonate, polymethacrylate, polystyrene, polyester, polyolefin, epoxy, melamine, triacetyl cellulose, ABS, AS, Norbornene resins, etc.), metals (silicon wafers, etc.), wood, paper, slate, etc., but especially from the viewpoint that the release layer of the present invention has sufficient adhesion to it, glass is preferred . In addition, the surface of the substrate may be composed of a single material, or may be composed of two or more materials. As the surface of the substrate is composed of two or more materials, a certain area of the surface of the substrate is composed of a certain material, and the rest of the surface is composed of other materials. The entire surface of the substrate is located in a dot pattern, line and space. Pattern-like materials such as patterns are patterns that exist in other materials.
塗佈之方法雖無特別限定,但可列舉例如:塗料法、旋轉塗佈法、刮刀塗佈、浸塗法、輥塗佈法、棒塗法、模具塗佈法、噴墨法、印刷法(凸版、凹版、平版、網版印刷等)等。 Although the coating method is not particularly limited, for example, coating method, spin coating method, knife coating, dip coating method, roll coating method, bar coating method, die coating method, inkjet method, and printing method can be mentioned. (Relief, intaglio, lithography, screen printing, etc.) etc.
用以醯亞胺化之加熱溫度雖有通常在50~550℃之範圍內適當決定者,但較佳為超過150℃~ 510℃。藉由將加熱溫度如此地設定,而成為可防止所得到的膜之脆弱化,並且充分進行醯亞胺化反應。加熱時間雖因依據加熱溫度而異,因此無法一概規定,但通常為5分鐘~5小時。又,醯亞胺化率係只要50~100%之範圍即可。 Although the heating temperature used for imidization is usually appropriately determined in the range of 50~550℃, it is preferably more than 150℃~ 510°C. By setting the heating temperature in this way, the fragility of the obtained film can be prevented, and the imidization reaction can proceed sufficiently. Although the heating time differs depending on the heating temperature, it cannot be specified, but it is usually 5 minutes to 5 hours. In addition, the imidization rate may be in the range of 50 to 100%.
作為本發明之加熱樣態之較佳的一例係可列舉:在以50~150℃進行5分鐘~2小時加熱之後,在此狀態下階段性地使加熱溫度上昇,最終以超過150℃~510℃進行30分鐘~4小時加熱的手法。尤其,較佳係在以50~150℃進行5分鐘~2小時加熱之後,以超過150℃~350℃進行5分鐘~2小時,接著以超過350℃~450℃進行30分鐘~4小時,最後以超過450℃~510℃進行30分鐘~4小時加熱。 As a preferable example of the heating aspect of the present invention, one can cite: after heating at 50 to 150°C for 5 minutes to 2 hours, the heating temperature is gradually increased in this state, and finally exceeds 150°C to 510°C. It is heated for 30 minutes to 4 hours at ℃. In particular, it is preferable to perform heating at 50 to 150°C for 5 minutes to 2 hours, then at a temperature exceeding 150°C to 350°C for 5 minutes to 2 hours, and then at a temperature exceeding 350°C to 450°C for 30 minutes to 4 hours, and finally Heat over 450℃~510℃ for 30 minutes to 4 hours.
加熱所使用的器具係可列舉例如:加熱板、烘箱等。加熱環境係可在空氣下,亦可在惰性氣體下,又,可在常壓下,亦可在減壓下。 Examples of the appliance system used for heating include a hot plate, an oven, and the like. The heating environment can be under air, or under inert gas, and under normal pressure or under reduced pressure.
剝離層之厚度通常為0.01~50μm左右,就生產性的觀點而言,較佳為0.05~20μm左右。另外,所期望的厚度係藉由調整加熱前之塗膜的厚度而實現。 The thickness of the release layer is usually about 0.01 to 50 μm, and from the viewpoint of productivity, it is preferably about 0.05 to 20 μm. In addition, the desired thickness is achieved by adjusting the thickness of the coating film before heating.
以上所說明之剝離層係具有與基體尤其是玻璃之基體之優異的密著性及與樹脂基板之適度的密著性與適度的剝離性。是故,本發明之剝離層係可適宜使用於可撓性電子裝置之製造製程中,不會對該裝置之樹脂基板造成損傷,而將該樹脂基板與形成於該樹脂基板上的電路等 一起從基體剝離。 The peeling layer described above has excellent adhesion to the substrate, especially the glass substrate, and moderate adhesion and moderate peelability to the resin substrate. Therefore, the peeling layer of the present invention can be suitably used in the manufacturing process of flexible electronic devices, without causing damage to the resin substrate of the device, and the resin substrate and the circuit formed on the resin substrate, etc. Peel off from the substrate together.
以下,針對使用有本發明之剝離層的可撓性電子裝置之製造方法的一例進行說明。 Hereinafter, an example of a manufacturing method of a flexible electronic device using the release layer of the present invention will be described.
使用本發明之剝離層形成用組成物,藉由上述之方法,於玻璃基體上形成剝離層。藉由於此剝離層之上,塗佈用以形成樹脂基板之樹脂溶液,並將此塗膜進行加熱,而隔著本發明之剝離層,形成固定於玻璃基體的樹脂基板。此時,以完全覆蓋剝離層的方式,以比剝離層之面積更大的面積形成基板。作為前述樹脂基板係可列舉作為可撓性電子裝置之樹脂基板所代表之由聚醯亞胺所構成的樹脂基板,作為用以形成其之樹脂溶液係可列舉聚醯亞胺溶液或聚醯胺酸溶液。該樹脂基板之形成方法只要按照常法即可。 Using the composition for forming a peeling layer of the present invention, a peeling layer is formed on a glass substrate by the above-mentioned method. By applying a resin solution for forming a resin substrate on this peeling layer, and heating the coating film, a resin substrate fixed to a glass substrate is formed via the peeling layer of the present invention. At this time, the substrate is formed in an area larger than the area of the release layer so as to completely cover the release layer. As the aforementioned resin substrate, a resin substrate made of polyimide represented by the resin substrate of a flexible electronic device can be cited, and as the resin solution used to form it, a polyimide solution or polyimide can be cited. Acid solution. The method of forming the resin substrate may be in accordance with a conventional method.
接著,於隔著本發明之剝離層被固定於基體的該樹脂基板之上,形成所期望之電路,其後,例如沿著剝離層來切割樹脂基板,將樹脂基板與此電路一起從剝離層剝離,而將樹脂基板與基體分離。此時,亦可將基體的一部分與剝離層一起進行切割。 Next, on the resin substrate fixed to the base via the release layer of the present invention, a desired circuit is formed, and then, for example, the resin substrate is cut along the release layer, and the resin substrate is removed from the release layer together with the circuit. Peel off to separate the resin substrate from the base. At this time, a part of the base body may be cut together with the release layer.
以下,雖列舉實施例更詳細地說明本發明,但本發明並不限定於此等實施例。 Hereinafter, although the present invention will be explained in more detail with examples, the present invention is not limited to these examples.
p-PDA:p-苯二胺(東京化成工業(股)製) p-PDA: p-phenylenediamine (manufactured by Tokyo Chemical Industry Co., Ltd.)
DATP:4,4”-二胺基-p-聯三苯(東京化成工業(股)製) DATP: 4,4"-diamino-p-terphenyl (manufactured by Tokyo Chemical Industry Co., Ltd.)
ABO:2-(4-胺基苯基)-5-胺基苯并噁唑(Changzhou Sunlight Pharmaceutical Co.,Ltd.製) ABO: 2-(4-aminophenyl)-5-aminobenzoxazole (manufactured by Changzhou Sunlight Pharmaceutical Co., Ltd.)
PMDA:苯均四酸二酐(東京化成工業(股)製) PMDA: Pyromellitic dianhydride (manufactured by Tokyo Chemical Industry Co., Ltd.)
CNT:奈米碳管,製品名NC7000(Nanocyl公司製) CNT: Carbon nanotube, product name NC7000 (manufactured by Nanocyl)
GRA:石墨烯,製品名iGurafen-α((股)iTEC製) GRA: Graphene, product name iGurafen-α (manufactured by iTEC)
NMP:N-甲基-2-吡咯啶酮 NMP: N-methyl-2-pyrrolidone
聚合物之重量平均分子量(Mw)及分子量分布(Mw/Mn)之測定係使用日本分光(股)製GPC裝置(管柱:昭和電工(股)製OHpak SB803-HQ、及OHpak SB804-HQ;溶析液:二甲基甲醯胺/LiBr.H2O(29.6mM)/H3PO4(29.6mM)/THF(0.1質量%);流量:1.0mL/分;管柱溫度:40℃;Mw:標準聚苯乙烯換算值)來進行(於以下之實施例及比較例中相同)。 The weight average molecular weight (Mw) and molecular weight distribution (Mw/Mn) of the polymer were measured using GPC equipment manufactured by JASCO Corporation (Column: Showa Denko Corporation OHpak SB803-HQ and OHpak SB804-HQ; Eluent: dimethylformamide /LiBr.H 2 O (29.6mM)/H 3 PO 4 (29.6mM)/THF (0.1% by mass); flow rate: 1.0mL/min; column temperature: 40°C ; Mw: standard polystyrene conversion value) (the same in the following examples and comparative examples).
使p-PDA 20.3g(188mmol)與DATP 12.2g(47mmol)溶解於NMP 617.4g中。將所得之溶液冷卻至15℃,於其中添加PMDA 50.1g(230mmol),在氮環境下,昇溫至50℃並進行反應48小時。所得之聚合物之Mw為82,100,分子 量分布為2.7。另外,不從所得之反應液中分離聚醯胺酸,而將該反應液直接作為樹脂基板形成用組成物來使用。 20.3g (188mmol) of p-PDA and 12.2g (47mmol) of DATP were dissolved in 617.4g of NMP. The resulting solution was cooled to 15°C, 50.1 g (230 mmol) of PMDA was added thereto, and the temperature was raised to 50°C under a nitrogen atmosphere, and the reaction was carried out for 48 hours. The Mw of the obtained polymer is 82,100, the molecule The quantity distribution is 2.7. In addition, the polyamic acid was not separated from the obtained reaction liquid, and the reaction liquid was used as a composition for forming a resin substrate as it was.
使p-PDA 2.49g(23.0mmol)溶解於NMP 63g中。其後,添加PMDA 4.51g(20.7mmol),在氮環境下,在室溫進行24小時攪拌。接著,於所得之溶液中添加CNT 0.07g,在室溫進一步攪拌30分鐘之後,將所得之混合物一邊進行攪拌一邊以超音波產生裝置(UIP1000hd(Transducer製)、以下相同)進行10分鐘500w之超音波處理,而得到填料分散液。 Dissolve 2.49 g (23.0 mmol) of p-PDA in 63 g of NMP. After that, 4.51 g (20.7 mmol) of PMDA was added, and stirring was performed at room temperature under a nitrogen environment for 24 hours. Next, 0.07 g of CNT was added to the resulting solution, and after further stirring for 30 minutes at room temperature, the resulting mixture was stirred with an ultrasonic generator (UIP1000hd (manufactured by Transducer), the same below) for 10 minutes at 500w. Acoustic treatment to obtain a filler dispersion.
使p-PDA 1.72g(15.9mmol)與DATP 1.03g(3.97mmol)溶解於NMP 63g中。其後,添加PMDA 4.25g(19.5mmol),在氮環境下,在室溫進行24小時攪拌。 Dissolve 1.72 g (15.9 mmol) of p-PDA and 1.03 g (3.97 mmol) of DATP in 63 g of NMP. After that, 4.25 g (19.5 mmol) of PMDA was added, and stirring was performed at room temperature under a nitrogen environment for 24 hours.
接著,於所得之溶液中添加CNT 0.07g,在室溫進一步攪拌30分鐘之後,將所得之混合物一邊進行攪拌一邊以超音波產生裝置進行10分鐘500w之超音波處理,而得到填料分散液。 Next, 0.07 g of CNT was added to the resulting solution, and after further stirring for 30 minutes at room temperature, the resulting mixture was subjected to ultrasonic treatment with an ultrasonic generator for 10 minutes and 500w while stirring, to obtain a filler dispersion.
使ABO 3.59g(15.9mmol)溶解於NMP 63g中。其後,添加PMDA 3.40g(15.6mmol),在氮環境下,在室溫進行24小時攪拌。接著,於所得之溶液中添加CNT 0.07g,在室溫進一步攪拌30分鐘之後,將所得之混合物一邊進行攪拌一邊以超音波產生裝置進行10分鐘500w之超音波處理,而得到填料分散液。 Dissolve 3.59 g (15.9 mmol) of ABO in 63 g of NMP. After that, 3.40 g (15.6 mmol) of PMDA was added, and stirring was performed at room temperature under a nitrogen environment for 24 hours. Next, 0.07 g of CNT was added to the resulting solution, and after further stirring for 30 minutes at room temperature, the resulting mixture was subjected to ultrasonic treatment with an ultrasonic generator for 10 minutes and 500w while stirring, to obtain a filler dispersion.
使ABO 3.59g(15.9mmol)溶解於NMP 63g中。於所得之溶液中,添加PMDA 3.40g(15.6mmol),在氮環境下,在室溫進行24小時攪拌。接著,於所得之溶液中添加GRA 0.07g,在室溫進一步攪拌30分鐘之後,將所得之混合物一邊進行攪拌一邊以超音波產生裝置進行10分鐘500w之超音波處理,而得到填料分散液。 Dissolve 3.59 g (15.9 mmol) of ABO in 63 g of NMP. To the resulting solution, 3.40 g (15.6 mmol) of PMDA was added, and the mixture was stirred at room temperature for 24 hours under a nitrogen environment. Next, 0.07 g of GRA was added to the resulting solution, and after further stirring for 30 minutes at room temperature, the resulting mixture was subjected to 500w ultrasonic treatment for 10 minutes with an ultrasonic generator while stirring, to obtain a filler dispersion.
將調製例2-1所得之填料分散液10g與NMP進行混合,而得到固體成分濃度5質量%之剝離性形成用組成物。另外,在此之固體成分係意味著混合有聚醯胺酸及填料者。 10 g of the filler dispersion obtained in Preparation Example 2-1 was mixed with NMP to obtain a releasable forming composition having a solid content of 5% by mass. In addition, the solid content here means a mixture of polyamide acid and filler.
取代調製例2-1所得之分散液,分別使用調製例2-2 ~2-4所得之分散液,除此之外,藉由與實施例3-1相同的方法,而得到固體成分濃度5質量%之剝離層形成用組成物。 In place of the dispersion obtained in Preparation Example 2-1, Preparation Example 2-2 was used respectively Except for the dispersion liquid obtained in ~2-4, a composition for forming a peeling layer having a solid content of 5% by mass was obtained by the same method as in Example 3-1.
使用旋轉塗佈機(條件:旋轉數3000rpm×30秒),將調製例3-1所得之剝離用形成組成物塗佈於100mm×100mm之無鹼玻璃基板上,將所得之塗膜使用加熱板以80℃進行10分鐘加熱。 Using a spin coater (condition: rotation number 3000 rpm × 30 seconds), the peeling-forming composition obtained in Preparation Example 3-1 was coated on a 100 mm × 100 mm alkali-free glass substrate, and the resulting coating film was used on a hot plate Heating was performed at 80°C for 10 minutes.
接著,將所得之膜裝入真空氣體置換爐(KDF-900GL(DENKEN-HIGHDENTAL)(股)製)之中,在室溫下將爐內進行60分鐘減壓之後進行氮置換。 Next, the obtained membrane was put into a vacuum gas displacement furnace (manufactured by KDF-900GL (DENKEN-HIGHDENTAL) (manufactured by DENKEN-HIGHDENTAL)), the furnace was depressurized at room temperature for 60 minutes, and then nitrogen displacement was performed.
其後,從室溫昇溫至300℃,依序以300℃ 30分鐘、以400℃ 60分鐘、以500℃ 10分鐘進行加熱,於玻璃基板上製作厚度約0.1μm之剝離層。 Thereafter, the temperature was raised from room temperature to 300°C, followed by heating at 300°C for 30 minutes, 400°C for 60 minutes, and 500°C for 10 minutes to form a release layer with a thickness of about 0.1 μm on the glass substrate.
另外,室溫~300℃、300~400℃、400~500℃之昇溫速度係設為10℃/分。 In addition, the heating rate of room temperature to 300°C, 300 to 400°C, and 400 to 500°C is set to 10°C/min.
除了使用調製例3-1所得之剝離層形成用組成物以外,以與實施例1-1相同的方法形成剝離層。 Except for using the composition for forming a peeling layer obtained in Preparation Example 3-1, a peeling layer was formed in the same manner as in Example 1-1.
針對所製作之剝離層,藉由以下的手法評估作為剝離層之功能。 For the produced peeling layer, the function of the peeling layer was evaluated by the following method.
進行形成於玻璃基板上之剝離層的交叉切割(縱橫1mm間隔,以下相同)、100格切割。亦即,藉由此交叉切割,形成有100個1mm四方之網眼。 Cross-cutting (1mm interval in vertical and horizontal, the same below) of the peeling layer formed on the glass substrate and 100-cell cutting were performed. That is, by this cross cutting, 100 1mm square meshes are formed.
接著,於此100格切割部分貼附黏著膠帶,將該膠帶剝離,根據以下之基準(5B~0B,B,A,AA),評估剝離之程度。 Then, stick the adhesive tape on the 100-cell cut part, peel off the tape, and evaluate the degree of peeling according to the following standards (5B~0B, B, A, AA).
5B:0%剝離(無剝離) 5B: 0% peeling (no peeling)
4B:未達5%之剝離 4B: Stripping less than 5%
3B:5~未達15%之剝離 3B: 5 to less than 15% peeling
2B:15~未達35%之剝離 2B: 15 to less than 35% peeling
1B:35~未達65%之剝離 1B: 35 to less than 65% peeling
0B:65~未達80%之剝離 0B: 65 to less than 80% peeling
B:80~未達95%之剝離 B: 80~95% peeling
A:95~未達100%之剝離 A: 95 to less than 100% peeling
AA:100%剝離(完全剝離) AA: 100% peeling (complete peeling)
使用棒塗佈機(間隙:250μm),於實施例1-1所得之剝離層之上,塗佈調製例1-1所得之樹脂基板形成用組成物。其後,將所得之塗膜使用加熱板,以80℃進行30分 鐘加熱。 Using a bar coater (gap: 250 μm), the resin substrate forming composition obtained in Preparation Example 1-1 was applied on the release layer obtained in Example 1-1. After that, the obtained coating film was heated at 80°C for 30 minutes using a hot plate Bell heating.
接著,將所得之膜裝入真空氣體置換爐(KDF-900GL(DENKEN-HIGHDENTAL)(股)製)之中,在室溫下將爐內進行60分鐘減壓之後進行氮置換。 Next, the obtained membrane was put into a vacuum gas displacement furnace (manufactured by KDF-900GL (DENKEN-HIGHDENTAL) (manufactured by DENKEN-HIGHDENTAL)), the furnace was depressurized at room temperature for 60 minutes, and then nitrogen displacement was performed.
其後,從室溫昇溫至300℃,依序以300℃ 30分鐘、以400℃ 30分鐘、以500℃ 60分鐘進行加熱,於玻璃基板上形成厚度約10μm之樹脂基板。 Thereafter, the temperature was raised from room temperature to 300°C, followed by heating at 300°C for 30 minutes, 400°C for 30 minutes, and 500°C for 60 minutes to form a resin substrate with a thickness of about 10 μm on the glass substrate.
另外,室溫~300℃、300~400℃、400~500℃之昇溫速度係設為10℃/分。以相同方式,於實施例1-2~1-4所得之剝離層上製作樹脂基板。 In addition, the heating rate of room temperature to 300°C, 300 to 400°C, and 400 to 500°C is set to 10°C/min. In the same manner, a resin substrate was fabricated on the peeling layer obtained in Examples 1-2 to 1-4.
接著,藉由進行樹脂基板/剝離層之交叉切割的交叉切割(縱橫1mm間隔,以下相同),進行100格切割,並於此100格切割部分貼附黏著膠帶,將該膠帶剝離,根據上述之基準(5B~0B,B,A,AA),評估剝離之程度。 Next, by performing cross cutting of resin substrate/peeling layer cross cutting (1mm in vertical and horizontal length, the same below), a 100 grid cut is performed, and an adhesive tape is attached to the 100 grid cut part, and the tape is peeled off according to the above Benchmark (5B~0B, B, A, AA) to evaluate the degree of peeling.
將剝離性評估之結果顯示於表1。如表1所示般,得知本發明之剝離層係與玻璃基板之密著性優異,且與樹脂基板之剝離性優異。 The results of the peelability evaluation are shown in Table 1. As shown in Table 1, it was found that the peeling layer of the present invention has excellent adhesion to the glass substrate and excellent peelability with the resin substrate.
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| JP7092114B2 (en) * | 2017-03-30 | 2022-06-28 | 日産化学株式会社 | A composition for forming a release layer and a release layer |
| CN109836858B (en) * | 2017-11-29 | 2021-10-01 | 上海和辉光电股份有限公司 | Release film, flexible device manufacturing method, release film and flexible device |
| US11927904B2 (en) * | 2021-06-16 | 2024-03-12 | Canon Kabushiki Kaisha | Electrophotographic belt having a substrate containing a polyimide resin and carbon nanotubes, electrophotographic image forming apparatus, fixing device, and varnish |
| JP7719711B2 (en) * | 2021-12-28 | 2025-08-06 | 株式会社Screenホールディングス | Method for manufacturing layered structure and method for manufacturing electronic device |
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