[go: up one dir, main page]

TWI710017B - Wafer wet processing station - Google Patents

Wafer wet processing station Download PDF

Info

Publication number
TWI710017B
TWI710017B TW108139765A TW108139765A TWI710017B TW I710017 B TWI710017 B TW I710017B TW 108139765 A TW108139765 A TW 108139765A TW 108139765 A TW108139765 A TW 108139765A TW I710017 B TWI710017 B TW I710017B
Authority
TW
Taiwan
Prior art keywords
wafer
wet processing
cassette
processing workstation
holding part
Prior art date
Application number
TW108139765A
Other languages
Chinese (zh)
Other versions
TW202119491A (en
Inventor
黃富源
吳宗恩
邱雲正
吳進原
Original Assignee
弘塑科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 弘塑科技股份有限公司 filed Critical 弘塑科技股份有限公司
Priority to TW108139765A priority Critical patent/TWI710017B/en
Application granted granted Critical
Publication of TWI710017B publication Critical patent/TWI710017B/en
Publication of TW202119491A publication Critical patent/TW202119491A/en

Links

Images

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The present disclosure provides a wafer wet processing station including a soaking tank, a robot arm, and a single wafer processing apparatus. A wafer is immersed in the soaking tank pre-filled with a process liquid in such a manner that its plate surface is perpendicular to a horizontal plane. The robot arm includes a holding portion and a turning portion. The holding portion is configured to hold the wafer thereon. The turning portion is configured to control the holding portion to be turned with respect to the horizontal plane. The holding portion is turned by 90 degrees by the turning portion so that the wafer is transferred with its plate surface parallel to the horizontal plane. The single wafer processing apparatus is configured to apply a cleaning liquid to the surface of the wafer that has been soaked through the process liquid. The wafer wet processing station can be used to perform a series of cleaning processes such as immersion, spray cleaning on the wafer to clean the wafer with miniaturized chips and high-density interconnection layout.

Description

晶圓濕處理工作站Wafer wet processing workstation

本揭示是關於一種工作站,特別是關於一種晶圓濕處理工作站。This disclosure relates to a workstation, especially a wafer wet processing workstation.

隨者半導體元件的微小化(miniaturization)以及晶片的導線連接(interconnection)圖案密度之增加,導線逐漸朝向更小線寬與線距(fine line width and space)方向發展,這使得半導體清洗蝕刻的製程面臨更加嚴峻之挑戰。目前晶圓或基板通常需要進行多道清洗與蝕刻處理製程才能確保最終清洗蝕刻效果能滿足元件之製程規格需求,尤其在光阻去除(photoresist stripping)、金屬剝離(metal lift-off)、以及在晶圓解鍵合(post wafer de-bonding) 之後,晶圓表面之黏著劑層(adhesive layer)與剝離劑層(release layer)之殘留物的清洗去除製程,無法只依賴單一道製程就完成清洗目的,必須結合晶圓浸泡與單晶圓噴洗設備。With the miniaturization of semiconductor components and the increase in the pattern density of interconnection patterns of chips, the wires gradually develop in the direction of smaller line width and fine line width and space, which makes the semiconductor cleaning and etching process Facing more severe challenges. At present, wafers or substrates usually require multiple cleaning and etching processes to ensure that the final cleaning and etching effect can meet the process specifications of the components, especially in photoresist stripping, metal lift-off, and in After the wafer de-bonding (post wafer de-bonding), the cleaning and removal process of the residues of the adhesive layer and the release layer on the surface of the wafer cannot be completed by a single process. Must combine wafer immersion and single wafer spray cleaning equipment.

另一方面,一般的晶圓浸泡設備是先將複數個晶圓,由入料口經傳送裝置,將晶圓一次一片傳送放置在卡匣後,接著將卡匣向下移動以浸入浸泡槽。經浸泡一段製程時間後,將卡匣連同該等晶圓一起從該浸泡槽向上移動,以離開浸泡槽。最後,藉由持取機構將浸泡後的晶圓逐一地送往下一道製程。然而,在晶圓浸泡設備中,如果晶圓是採水平放置,在卡匣完全浸泡在浸泡槽內之情況下,持取機構是無法將晶圓個別且單獨地取出,必須等到卡匣上升離開浸泡槽之後,持取機構才能進入卡匣取出晶圓。然而,在同一個卡匣中,較先取出的晶圓往往會有浸泡不足的問題,而較後取出的晶圓則容易有浸泡過久而導致晶圓遭受損壞。也就是說,採用水平式晶圓浸泡設備無法精確控制各個晶圓於化學浸泡槽之浸泡時間,容易影響晶圓浸泡製程之良率。On the other hand, the general wafer immersion equipment first transfers a plurality of wafers from the feed port through the conveying device, and places the wafers in the cassette one at a time, and then moves the cassette down to be immersed in the immersion tank. After soaking for a period of processing time, the cassette together with the wafers are moved upward from the soaking tank to leave the soaking tank. Finally, the immersed wafers are sent to the next process one by one by the holding and taking mechanism. However, in the wafer immersion equipment, if the wafers are placed horizontally and the cassette is completely immersed in the immersion tank, the holding and picking mechanism cannot take out the wafers individually and individually. It must wait until the cassette is lifted and left. After the soaking tank, the holding and taking mechanism can enter the cassette to take out the wafer. However, in the same cassette, the wafers taken out earlier often suffer from insufficient immersion, while the wafers taken out later are prone to be soaked for too long and cause damage to the wafers. In other words, the horizontal wafer immersion equipment cannot precisely control the immersion time of each wafer in the chemical immersion tank, which easily affects the yield of the wafer immersion process.

有鑑於此,有必要提出一種晶圓濕處理工作站,以解決習知技術中存在的問題。In view of this, it is necessary to provide a wafer wet processing workstation to solve the problems in the prior art.

為解決上述習知技術之問題,本揭示之目的在於提供一種晶圓濕處理工作站,其適用於清洗具有晶片微小化和高密度導線佈局的晶圓以去除在先前製程中附著在晶圓表面的殘留物,並且能精確地控制每一片晶圓的化學浸泡的時間。In order to solve the above-mentioned problems of the conventional technology, the purpose of the present disclosure is to provide a wafer wet processing workstation, which is suitable for cleaning wafers with chip miniaturization and high-density wire layouts to remove the wafers attached to the surface of the wafer during the previous process. Residues, and can accurately control the chemical immersion time of each wafer.

為達成上述目的,本揭示提供一種晶圓濕處理工作站,包含一浸泡槽、一卡匣、一機械手臂、和一單晶圓處理設備。卡匣設置在該浸泡槽內,包含複數個卡槽,且每一該卡槽放置一晶圓,其中該複數個卡槽沿著一水平方向間隔排列,使得該晶圓以其板面垂直於一水平面的方式浸入預先注滿製程液體的該浸泡槽內。機械手臂包含一保持部和一翻轉部。該晶圓保持於該保持部上。翻轉部與該保持部連接,其中該翻轉部控制該保持部相對於該水平面翻轉,並且藉由該翻轉部將該保持部翻轉90度而使得該晶圓以其板面平行於該水平面的方式傳送。單晶圓處理設備設置在該浸泡槽之下游,其中浸泡過該製程液體之該晶圓放置在該單晶圓處理設備,並且該單晶圓處理設備施加一清洗液體至該晶圓之該板面。To achieve the above objective, the present disclosure provides a wafer wet processing workstation, which includes a immersion tank, a cassette, a robotic arm, and a single wafer processing equipment. The cassette is arranged in the immersion tank, including a plurality of card slots, and each of the card slots is placed with a wafer, wherein the plurality of card slots are arranged at intervals along a horizontal direction, so that the wafer is perpendicular to the board surface Immerse in the soaking tank pre-filled with process liquid in a horizontal plane. The mechanical arm includes a holding part and a turning part. The wafer is held on the holding part. The turning portion is connected to the holding portion, wherein the turning portion controls the turning of the holding portion relative to the horizontal plane, and the turning portion turns the holding portion 90 degrees so that the wafer has its plate surface parallel to the horizontal plane. Transmit. Single wafer processing equipment is arranged downstream of the immersion tank, wherein the wafer soaked in the process liquid is placed in the single wafer processing equipment, and the single wafer processing equipment applies a cleaning liquid to the plate of the wafer surface.

在一較佳實施例中, 該機械手臂之該保持部包含一對夾持臂和至少一對夾爪。該對夾持臂彼此間隔設置。該對夾爪彼此面對設置,其中每一該夾爪對應設置在其中之一該夾持臂上,並且每一該夾爪藉由與該晶圓之邊緣接觸以將該晶圓夾持在該對夾爪之間。In a preferred embodiment, the holding portion of the robotic arm includes a pair of clamping arms and at least a pair of clamping jaws. The pair of clamping arms are spaced apart from each other. The pair of clamping jaws are arranged facing each other, and each of the clamping jaws is correspondingly arranged on one of the clamping arms, and each of the clamping jaws is in contact with the edge of the wafer to clamp the wafer on Between the pair of jaws.

在一較佳實施例中,每一該夾爪包含一凹槽,其中該晶圓固定在該凹槽內。In a preferred embodiment, each of the clamping jaws includes a groove, wherein the wafer is fixed in the groove.

在一較佳實施例中,該對夾持臂能相對彼此移動以改變該對夾持臂之間的距離。In a preferred embodiment, the pair of clamping arms can move relative to each other to change the distance between the pair of clamping arms.

在一較佳實施例中,該晶圓濕處理工作站還包含一傳送裝置,與該機械手臂相鄰且設置在該浸泡槽與該單晶圓處理設備之間,其中該傳送裝置將浸泡過該製程液體之該晶圓移送至該單晶圓處理設備。該傳送裝置包含一伸縮臂,且該伸縮臂可相對該機械手臂之該保持部移動以延伸至該對夾持臂之間。In a preferred embodiment, the wafer wet processing workstation further includes a conveying device adjacent to the robotic arm and arranged between the soaking tank and the single wafer processing equipment, wherein the conveying device will immerse the The wafer of the process liquid is transferred to the single wafer processing equipment. The conveying device includes a telescopic arm, and the telescopic arm can move relative to the holding part of the robot arm to extend between the pair of clamping arms.

在一較佳實施例中,該機械手臂還包含一升降部,帶動該保持部沿著一垂直方向升降,並且藉由該升降部的上升移動而帶動該保持部沿著該垂直方向從該卡匣取出該晶圓,或者是藉由該升降部的下降移動而帶動該保持部沿著該垂直方向將該晶圓放入該卡匣。In a preferred embodiment, the robotic arm further includes a lifting portion, which drives the holding portion to rise and fall in a vertical direction, and the lifting movement of the lifting portion drives the holding portion to move from the card along the vertical direction. The cassette takes out the wafer, or the holding part is driven to put the wafer into the cassette along the vertical direction by the descending movement of the lifting part.

在一較佳實施例中,該機械手臂還包含一伸縮部,與該翻轉部連接,帶動該保持部沿著該水平方向移動。In a preferred embodiment, the robot arm further includes a telescopic part connected with the turning part to drive the holding part to move along the horizontal direction.

在一較佳實施例中,每一該晶圓與該卡匣的接觸點小於等於四個。In a preferred embodiment, the contact points between each wafer and the cassette are less than or equal to four.

在一較佳實施例中,該單晶圓處理設備包含一旋轉蝕刻台和一旋轉清洗台。旋轉蝕刻台施加一化學液體至該晶圓之該板面以去除附著在該晶圓上之殘留物。旋轉清洗台設置在該旋轉蝕刻台之下游,施加去離子水至該晶圓之該板面以去除附著在該晶圓上之該化學液體。In a preferred embodiment, the single wafer processing equipment includes a rotary etching table and a rotary cleaning table. The rotary etching table applies a chemical liquid to the plate surface of the wafer to remove the residue attached to the wafer. The rotary cleaning table is arranged downstream of the rotary etching table, and deionized water is applied to the plate surface of the wafer to remove the chemical liquid adhering to the wafer.

在一較佳實施例中,該浸泡槽包含一震動器,與該卡匣連接,其中該震動器使該卡匣震動並連帶地使放置在該卡匣上之該晶圓震動。In a preferred embodiment, the immersion tank includes a vibrator connected to the cassette, wherein the vibrator vibrates the cassette and also vibrates the wafer placed on the cassette.

相較於先前技術,本揭示之晶圓濕處理工作站可對晶圓執行化學浸泡、化學液噴洗、以及去離子水清洗乾燥等一系列清洗製程,以實現具有晶片微小化和高密度導線佈局之晶圓的清洗。並且,本揭示藉由提供垂直式浸泡槽和與浸泡槽相關聯的機械手臂,並將浸泡槽、機械手臂、和晶圓濕處理工作站的控制器連結,如此可精確地控制晶圓的浸泡時間。Compared with the prior art, the wafer wet processing workstation of the present disclosure can perform a series of cleaning processes such as chemical immersion, chemical liquid spray cleaning, and deionized water cleaning and drying on the wafers to achieve chip miniaturization and high-density wire layout Of wafer cleaning. In addition, the present disclosure provides a vertical immersion tank and a robot arm associated with the immersion tank, and connects the immersion tank, the robot arm, and the controller of the wafer wet processing station, so that the wafer immersion time can be precisely controlled .

爲了讓本揭示之上述及其他目的、特徵、優點能更明顯易懂,下文將特舉本揭示較佳實施例,並配合所附圖式,作詳細說明如下。In order to make the above and other objectives, features, and advantages of the present disclosure more obvious and understandable, the following will describe the preferred embodiments of the present disclosure in conjunction with the accompanying drawings in detail.

請參照第1圖,其顯示本揭示之較佳實施例之晶圓濕處理工作站1之示意圖。晶圓濕處理工作站1包含入料口10、傳送裝置30、機械手臂40、浸泡槽50、單晶圓處理設備60、出料口70。傳送裝置30配置為可在入料口10、浸泡槽50、單晶圓處理設備60、和出料口70之間移動。傳送裝置30與機械手臂40相鄰。機械手臂40之基座固定在浸泡槽50之一側,並且機械手臂40可相對於浸泡槽50執行一系列作動,具體作動將於後詳述。Please refer to FIG. 1, which shows a schematic diagram of a wafer wet processing workstation 1 according to a preferred embodiment of the present disclosure. The wafer wet processing workstation 1 includes an inlet 10, a conveying device 30, a robotic arm 40, a immersion tank 50, a single wafer processing equipment 60, and a discharge port 70. The transfer device 30 is configured to be movable between the inlet 10, the immersion tank 50, the single wafer processing equipment 60, and the outlet 70. The conveying device 30 is adjacent to the robot arm 40. The base of the robotic arm 40 is fixed on one side of the soaking tank 50, and the robotic arm 40 can perform a series of actions relative to the soaking tank 50, and the specific actions will be described in detail later.

本揭示之晶圓濕處理工作站1可用於對晶圓執行化學浸泡、化學液噴洗、以及去離子水(DI Water)清洗乾燥等一系列清洗製程。以去光阻製程(photoresist stripping)為例,待處理的晶圓從入料口10輸入,並且藉由傳送裝置30將待處理的晶圓傳送至機械手臂40。機械手臂40將晶圓放入浸泡槽50以進行化學浸泡,使得製程液體滲透(penetration)進入光阻,進而促使光阻膨脹(swelling)與溶解(dissolution)。晶圓浸泡完成之後,機械手臂40將晶圓取出並傳送回到傳送裝置30,並且藉由傳送裝置30將晶圓傳送至單晶圓處理設備60。接著,依序利用水平式單晶圓旋轉設備對晶圓施加化學藥液以將光阻殘留物去除,以及施加去離子水以去除殘留的化學液,如此才能徹底完成晶圓之清洗。最後,藉由傳送裝置30將清洗完畢的晶圓傳送至出料口70以進行後續製程。後續將詳細描述在晶圓濕處理工作站1中,晶圓的傳送與相關的設備之作動。The wafer wet processing workstation 1 of the present disclosure can be used to perform a series of cleaning processes such as chemical immersion, chemical liquid spray cleaning, and DI Water cleaning and drying of the wafer. Taking the photoresist stripping process as an example, the wafer to be processed is input from the inlet 10, and the wafer to be processed is transferred to the robotic arm 40 by the transfer device 30. The robotic arm 40 puts the wafer into the immersion tank 50 for chemical immersion, so that the process liquid penetrates into the photoresist, thereby promoting swelling and dissolution of the photoresist. After the wafer is soaked, the robot arm 40 takes out the wafer and transfers it back to the transfer device 30, and transfers the wafer to the single wafer processing equipment 60 by the transfer device 30. Then, a horizontal single-wafer rotating device is used to sequentially apply chemical liquids to the wafers to remove photoresist residues, and apply deionized water to remove the remaining chemical liquids, so that the wafer can be thoroughly cleaned. Finally, the cleaned wafer is transferred to the discharge port 70 by the transfer device 30 for subsequent processing. The transfer of wafers and the actions of related equipment in the wafer wet processing workstation 1 will be described in detail later.

請參照第2圖,其顯示第1圖之晶圓濕處理工作站1之機械手臂40之第一動作示意圖。晶圓濕處理工作站1還包含設置在浸泡槽50內之卡匣90。卡匣90包含複數個卡槽91,且每一卡槽91用於放置一片晶圓2。應當注意的是,該複數個卡槽91沿著水平方向(即X方向)間隔排列,使得晶圓2以其板面垂直於水平面(即XY平面)的方式浸入預先注滿製程液體3的浸泡槽50內。本揭示的晶圓濕處理工作站1是以垂直式浸泡槽50(vertical soaking tank)取代水平式浸泡槽(horizontal soaking tank)。藉此設計,複數個晶圓2採垂直方向立於浸泡槽50中,促使上下循環流動之製程液體3能充分接觸各晶圓2之表面,如此可防止使用水平浸泡槽因晶圓採水平放置而阻礙藥液流動與氣泡排放,進而導致循環流場不良與雜質回沾等問題。此外,浸泡槽50包含附加組件51(包含如震動器、加熱器、循環管路、過濾器等),使得浸泡槽50具備藥液加熱(heating)、循環(circulation)、過濾(filtration)、震動(agitation)等功能,促使藥液保持流動並充分接觸各晶圓2之表面。附加組件51之震動器與卡匣90連接且為可調式。藉由可調式震動器來調整震動頻率與幅度,使得卡匣90震動並連帶地使放置在卡匣90上之晶圓2震動。如此,藉由晶圓2在垂直浸泡製程中產生適當震動可促進晶圓2與製程液體3之反應,並且可防止浸泡槽50之製程液體3在晶圓2的邊緣處產生流場阻礙。Please refer to FIG. 2, which shows the first action schematic diagram of the robotic arm 40 of the wafer wet processing workstation 1 in FIG. 1. The wafer wet processing workstation 1 also includes a cassette 90 arranged in the immersion tank 50. The cassette 90 includes a plurality of card slots 91, and each of the card slots 91 is used to place a wafer 2. It should be noted that the plurality of card slots 91 are arranged at intervals along the horizontal direction (that is, the X direction), so that the wafer 2 is immersed in the pre-filled process liquid 3 so that the surface of the wafer 2 is perpendicular to the horizontal plane (that is, the XY plane). Slot 50. The wafer wet processing workstation 1 of the present disclosure uses a vertical soaking tank 50 (vertical soaking tank) instead of a horizontal soaking tank. With this design, a plurality of wafers 2 are placed in the immersion tank 50 in the vertical direction, so that the process liquid 3 circulating up and down can fully contact the surface of each wafer 2, which prevents the use of a horizontal immersion tank because the wafers are placed horizontally It hinders the flow of the liquid medicine and the discharge of bubbles, which in turn leads to problems such as poor circulating flow field and back-contamination of impurities. In addition, the immersion tank 50 includes additional components 51 (including vibrators, heaters, circulation pipes, filters, etc.), so that the immersion tank 50 is equipped with heating, circulation, filtration, and vibration. (agitation) and other functions to promote the liquid medicine to keep flowing and fully contact the surface of each wafer 2. The vibrator of the additional component 51 is connected to the cassette 90 and is adjustable. The vibration frequency and amplitude are adjusted by the adjustable vibrator, so that the cassette 90 vibrates and the wafer 2 placed on the cassette 90 vibrates. In this way, the proper vibration of the wafer 2 during the vertical immersion process can promote the reaction between the wafer 2 and the process liquid 3 and prevent the process liquid 3 in the immersion tank 50 from generating flow field obstructions at the edge of the wafer 2.

如第2圖所示,機械手臂40用於取放和移送晶圓2。機械手臂40包含基座41、升降部42、伸縮部43、翻轉部44、和保持部45。基座41固定在浸泡槽50之一側邊。升降部42設置在基座41上,用於帶動伸縮部43、翻轉部44、和保持部45一起沿著垂直方向(即Z方向)升降。保持部45用於取放晶圓2並且將晶圓2保持於其上。並且,藉由升降部42的上升移動而帶動保持部45沿著垂直方向從卡匣90取出晶圓2,或者是藉由升降部42的下降移動而帶動保持部45沿著垂直方向將晶圓2放入卡匣90。翻轉部44連接在伸縮部43和保持部45之間。伸縮部43用於帶動翻轉部44和保持部45沿著水平方向移動。具體來說,伸縮部43包含第一段431和第二段432。藉由控制第一段431朝向第二段432靠近可帶動翻轉部44和保持部45朝著靠近基座41的方向水平移動。又,藉由控制第一段431遠離第二段432可帶動翻轉部44和保持部45朝著遠離基座41的方向水平移動。翻轉部44用於控制保持部45相對於水平面作翻轉動作46。應當理解的是,機械手臂40包含感測器、控制器、驅動器等多種元件以實現升降部42的升降作動、伸縮部43的伸縮作動、翻轉部44的翻轉作動、保持部45對晶圓2的取放作動等。As shown in FIG. 2, the robot arm 40 is used for picking, placing and transferring the wafer 2. The robot arm 40 includes a base 41, an elevating part 42, a telescopic part 43, a turning part 44, and a holding part 45. The base 41 is fixed on one side of the soaking tank 50. The elevating portion 42 is provided on the base 41 and is used to drive the telescopic portion 43, the turning portion 44, and the holding portion 45 to rise and fall together in the vertical direction (ie, the Z direction). The holding portion 45 is used to take and place the wafer 2 and hold the wafer 2 thereon. In addition, the lifting part 42 drives the holding part 45 to take out the wafer 2 from the cassette 90 in the vertical direction, or the lifting part 42 drives the holding part 45 to move the wafer in the vertical direction. 2Insert the cassette 90. The turning portion 44 is connected between the telescopic portion 43 and the holding portion 45. The telescopic portion 43 is used to drive the turning portion 44 and the holding portion 45 to move along the horizontal direction. Specifically, the telescopic part 43 includes a first section 431 and a second section 432. By controlling the first section 431 to approach the second section 432, the turning portion 44 and the holding portion 45 can be driven to move horizontally toward the base 41. In addition, by controlling the first section 431 to be away from the second section 432, the turning portion 44 and the holding portion 45 can be moved horizontally away from the base 41. The turning portion 44 is used to control the holding portion 45 to perform a turning action 46 relative to the horizontal plane. It should be understood that the robot arm 40 includes sensors, controllers, drivers and other components to achieve the lifting action of the lifting part 42, the telescopic action of the telescopic part 43, the turning action of the turning part 44, and the holding part 45 against the wafer 2 The pick and place action, etc.

請參照第3圖和第4圖,第3圖顯示第1圖之晶圓濕處理工作站1之機械手臂40之第二動作示意圖,以及第4圖顯示第3圖之晶圓濕處理工作站1之立體示意圖。如第3圖和第4圖所示,當晶圓2浸泡特定時間後,機械手臂40會將浸泡完成的晶圓2取出。具體來說,機械手臂40之翻轉部44繞軸轉動以帶動保持部45相對於水平面翻轉90度,使得保持部45轉變成垂直於水平面。接著,機械手臂40之伸縮部43藉由第一段431和第二段432的相對運動來帶動保持部45移動至待取出的晶圓2的上方位置。接著,機械手臂40之升降部42控制保持部45沿著垂直方向下移進而抓取到目標晶圓2。Please refer to Figures 3 and 4. Figure 3 shows the second action schematic diagram of the robotic arm 40 of the wafer wet processing workstation 1 in Figure 1, and Figure 4 shows the wafer wet processing workstation 1 in Figure 3 Three-dimensional schematic diagram. As shown in FIGS. 3 and 4, when the wafer 2 is soaked for a certain period of time, the robot arm 40 will take out the wafer 2 that has been soaked. Specifically, the turning portion 44 of the robot arm 40 rotates around an axis to drive the holding portion 45 to turn 90 degrees with respect to the horizontal plane, so that the holding portion 45 is transformed to be perpendicular to the horizontal plane. Then, the telescopic part 43 of the robot arm 40 drives the holding part 45 to move to the upper position of the wafer 2 to be taken out by the relative movement of the first section 431 and the second section 432. Then, the lifting part 42 of the robot arm 40 controls the holding part 45 to move down in the vertical direction to grab the target wafer 2.

請參照第5圖和第6圖,第5圖顯示第4圖之晶圓濕處理工作站1之局部剖面圖,以及第6圖顯示機械手臂40之夾爪452之側視圖。如第5圖所示,機械手臂40之保持部45包含一對夾持臂451和兩對夾爪452。該對夾持臂451彼此相鄰且間隔設置。兩對夾爪452中的每一對夾爪452彼此面對設置,並且每一夾爪452對應設置在其中之一夾持臂451上。也就是說,在本實施例中,每一夾持臂451上連接有兩個夾爪452,且夾持臂451上的夾爪452與另一夾持臂451上的另一夾爪452彼此對應(例如,當保持部45垂直於水平面時,該對夾爪452位在相同的水平高度)。此外,保持部45抓取到目標晶圓2意旨每一夾爪452藉由與晶圓2之邊緣接觸以將晶圓2夾持在該對夾爪452之間。具體來說,如第6圖所示,每一夾爪452包含一個凹槽453,並且晶圓2之邊緣是被固定在夾爪452的凹槽453中。應當注意的是,本實施例的夾爪452的數量為四個,惟不侷限於此。Please refer to FIGS. 5 and 6. FIG. 5 shows a partial cross-sectional view of the wafer wet processing workstation 1 in FIG. 4, and FIG. 6 shows a side view of the gripper 452 of the robot arm 40. As shown in FIG. 5, the holding portion 45 of the robot arm 40 includes a pair of clamping arms 451 and two pairs of clamping jaws 452. The pair of clamping arms 451 are adjacent to each other and arranged at intervals. Each pair of clamping jaws 452 of the two pairs of clamping jaws 452 are disposed facing each other, and each clamping jaw 452 is correspondingly disposed on one of the clamping arms 451. That is, in this embodiment, two clamping jaws 452 are connected to each clamping arm 451, and the clamping jaw 452 on the clamping arm 451 and the other clamping jaw 452 on the other clamping arm 451 are mutually connected. Corresponding (for example, when the holding portion 45 is perpendicular to the horizontal plane, the pair of clamping jaws 452 are located at the same level). In addition, that the holding portion 45 grabs the target wafer 2 means that each clamping jaw 452 clamps the wafer 2 between the pair of clamping jaws 452 by contacting the edge of the wafer 2. Specifically, as shown in FIG. 6, each clamping jaw 452 includes a groove 453, and the edge of the wafer 2 is fixed in the groove 453 of the clamping jaw 452. It should be noted that the number of clamping jaws 452 in this embodiment is four, but it is not limited to this.

如第5圖所示,卡匣90包含四個橫桿92。每一橫桿90上形成有一排卡槽91以供晶圓2放置。並且,放置在卡匣90中的晶圓2只會與橫桿92接觸。也就是說,在本實施例中,每一晶圓20與卡匣90的接觸點為四個。應當理解的是,在其他實施例中亦可採用其他數量的接觸點的設計。較佳地,每一晶圓20與卡匣90的接觸點小於等於四個。在本揭示中,通過將卡匣90設計為與晶圓2之邊緣之接觸點只有小於等於四個的接觸 ,如此可儘量減少卡匣90阻礙製程液體3流動之面積。此外,卡匣90之橫桿92設置為對應於晶圓2之底部且不接觸晶圓2之左右兩側。因此,機械手臂40之保持部45可順利地伸入卡匣90內部而不會與卡匣90發生結構上的干涉。As shown in FIG. 5, the cassette 90 includes four cross bars 92. A row of card slots 91 is formed on each cross bar 90 for the wafer 2 to be placed. In addition, the wafer 2 placed in the cassette 90 only contacts the cross bar 92. That is, in this embodiment, there are four contact points between each wafer 20 and the cassette 90. It should be understood that in other embodiments, designs with other numbers of contact points can also be used. Preferably, the contact points between each wafer 20 and the cassette 90 are less than or equal to four. In the present disclosure, by designing the cassette 90 to have only four or less contact points with the edge of the wafer 2, the area of the cassette 90 that hinders the flow of the process liquid 3 can be minimized. In addition, the cross bars 92 of the cassette 90 are arranged to correspond to the bottom of the wafer 2 and do not touch the left and right sides of the wafer 2. Therefore, the holding portion 45 of the robot arm 40 can smoothly extend into the cassette 90 without structural interference with the cassette 90.

請參照第7圖,其顯示第1圖之晶圓濕處理工作站1之機械手臂40之第三動作示意圖。當機械手臂40之保持部45抓取到目標晶圓2之後,機械手臂40之升降部42控制保持部45沿著垂直方向上升進而從卡匣90取出晶圓2。在本揭示中,由於機械手臂40取出晶圓2時,晶圓2是以其板面垂直於水平面的方式沿著垂直方向上升,故製程液體3容易因重力而流回浸泡槽60內,所以可避免晶圓2上升時,晶圓2之表面夾帶大量製程液體3,導致製程液體3浪費與污染機械手臂40。並且,本揭示的卡匣90不需要移動(如移動至離開浸泡槽50),而是藉由機械手臂40進入浸泡槽50以進行晶圓的取放。Please refer to FIG. 7, which shows a schematic diagram of the third action of the robotic arm 40 of the wafer wet processing workstation 1 in FIG. After the holding part 45 of the robot arm 40 grabs the target wafer 2, the lifting part 42 of the robot arm 40 controls the holding part 45 to rise in the vertical direction to take out the wafer 2 from the cassette 90. In the present disclosure, when the robotic arm 40 takes out the wafer 2, the wafer 2 rises in the vertical direction with its plate surface perpendicular to the horizontal plane, so the process liquid 3 easily flows back into the immersion tank 60 due to gravity. It can avoid that when the wafer 2 rises, a large amount of process liquid 3 is entrained on the surface of the wafer 2, which causes waste of the process liquid 3 and contamination of the robot arm 40. In addition, the cassette 90 of the present disclosure does not need to be moved (for example, to leave the immersion tank 50), but the robot arm 40 enters the immersion tank 50 to pick and place wafers.

請參照第8圖,其顯示第1圖之晶圓濕處理工作站1之機械手臂40與傳送裝置30之第一對應動作示意圖。機械手臂40從卡匣90中取出晶圓2之後,機械手臂40之翻轉部44將保持部45翻轉90度而使得晶圓2以其板面平行於水平面的方式傳送。接著,機械手臂40將浸泡後的晶圓傳送至傳送裝置30。Please refer to FIG. 8, which shows the first corresponding action diagram of the robotic arm 40 and the transfer device 30 of the wafer wet processing workstation 1 in FIG. 1. After the robotic arm 40 takes out the wafer 2 from the cassette 90, the turning portion 44 of the robotic arm 40 turns the holding portion 45 by 90 degrees so that the wafer 2 is transported with its plate surface parallel to the horizontal plane. Then, the robot arm 40 transfers the immersed wafer to the transfer device 30.

請參照第9圖和第10圖,第9圖顯示第1圖之晶圓濕處理工作站1之機械手臂40與傳送裝置30之第二對應動作示意圖,以及第10圖顯示第1圖之晶圓濕處理工作站1之機械手臂40與傳送裝置30之第二對應動作示意圖。如第9圖所示,傳送裝置30包含伸縮臂31。伸縮臂31可相對機械手臂40之保持部45移動。具體來說,當要取走機械手臂40上的晶圓時,傳送裝置30之伸縮臂31延伸至機械手臂40之該對夾持臂451之間且位在晶圓2之下方。並且,伸縮臂31可採用適當的元件將晶圓2保持於其上,例如真空吸盤、卡固機構等。如第10圖所示,當傳送裝置30將晶圓2固定於其上之後,機械手臂40之該對夾持臂451能相對彼此移動以改變夾持臂451之間的距離,進而釋放對晶圓的夾持固定。具體來說,此處所述的該對夾持臂451的相對移動意旨該對夾持臂451朝遠離彼此的方向移動以增加兩者之間的距離(該距離大於晶圓2之直徑),則機械手臂40會釋放對晶圓的夾持固定。可以理解的是,當該對夾持臂451進行晶圓2的夾持時,該對夾持臂451先朝遠離彼此的方向移動以增加兩者之間的距離(該距離大於晶圓2之直徑),接著朝靠近彼此的方向移動以減少兩者之間的距離(該距離約等於晶圓2之直徑)進而將晶圓2夾持在兩者之間。接著,傳送裝置30之伸縮臂31朝遠離機械手臂40的方向移動,並且傳送裝置30將晶圓2傳送至下游。具體來說,如第1圖所示,傳送裝置30與機械手臂40相鄰且設置在浸泡槽50與單晶圓處理設備60之間。傳送裝置30配置為用於將浸泡過製程液體3之晶圓2移送至下游的單晶圓處理設備60。Please refer to Figures 9 and 10. Figure 9 shows the second corresponding action diagram of the robotic arm 40 and the transfer device 30 of the wafer wet processing workstation 1 in Figure 1, and Figure 10 shows the wafer in Figure 1 A schematic diagram of the second corresponding action of the robotic arm 40 and the conveying device 30 of the wet processing workstation 1. As shown in FIG. 9, the conveying device 30 includes a telescopic arm 31. The telescopic arm 31 can move relative to the holding portion 45 of the robot arm 40. Specifically, when the wafer on the robotic arm 40 is to be removed, the telescopic arm 31 of the transfer device 30 extends between the pair of clamping arms 451 of the robotic arm 40 and is located below the wafer 2. In addition, the telescopic arm 31 can use appropriate components to hold the wafer 2 thereon, such as a vacuum chuck, a clamping mechanism, and the like. As shown in FIG. 10, after the transfer device 30 fixes the wafer 2 on it, the pair of clamping arms 451 of the robot arm 40 can move relative to each other to change the distance between the clamping arms 451, thereby releasing the pair of crystals. The round clamp is fixed. Specifically, the relative movement of the pair of clamping arms 451 described here means that the pair of clamping arms 451 move away from each other to increase the distance between them (the distance is greater than the diameter of the wafer 2), Then the robot arm 40 will release the clamping and fixing of the wafer. It is understandable that when the pair of clamping arms 451 is clamping the wafer 2, the pair of clamping arms 451 first move away from each other to increase the distance between the two (the distance is greater than the wafer 2 Diameter), and then move closer to each other to reduce the distance between the two (the distance is approximately equal to the diameter of the wafer 2) to clamp the wafer 2 between the two. Then, the telescopic arm 31 of the transfer device 30 moves in a direction away from the robot arm 40, and the transfer device 30 transfers the wafer 2 downstream. Specifically, as shown in FIG. 1, the transfer device 30 is adjacent to the robot arm 40 and is provided between the immersion tank 50 and the single wafer processing equipment 60. The transfer device 30 is configured to transfer the wafer 2 immersed in the process liquid 3 to the single wafer processing equipment 60 downstream.

如第1圖所示,單晶圓處理設備60設置在浸泡槽50之下游,用於承載浸泡過製程液體3之晶圓2,並且施加清洗液體至晶圓2之板面。在本實施例中,單晶圓處理設備60包含第一旋轉蝕刻台610、第二旋轉蝕刻台620、和旋轉清洗台630。第二旋轉蝕刻台620設置在第一旋轉蝕刻台610的下游,且旋轉清洗台630設置在第二旋轉蝕刻台620的下游,故晶圓2會依序被放置在第一旋轉蝕刻台610、第二旋轉蝕刻台620、和旋轉清洗台630。當晶圓2放置在第一旋轉蝕刻台610和第二旋轉蝕刻台620時,晶圓2會被分別施加不同的化學液體至晶圓2之板面以去除附著在晶圓2上之殘留物。並且,當晶圓2放置在旋轉清洗台630時,晶圓2會被施加去離子水至晶圓2之板面以去除附著在晶圓2上之化學液體。舉例來說,請參照第11圖,其顯示第1圖之晶圓濕處理工作站1之旋轉台之工作示意圖。第11圖中的旋轉台可為第一旋轉蝕刻台610、第二旋轉蝕刻台620、或旋轉清洗台630的其中一部份。旋轉台包含旋轉座601、承載台602、和液體供應裝置603。晶圓2放置在承載台602上。旋轉座601可繞軸轉動以帶動放置於其上的晶圓2旋轉。液體供應裝置603可提供一對應的液體(如化學液體或去離子水)至晶圓2的表面。因此,晶圓2通過在晶圓濕處理工作站1執行上述一系列的清洗流程進而能實現具有晶片微小化和高密度導線佈局之晶圓的清洗。As shown in FIG. 1, the single wafer processing equipment 60 is arranged downstream of the immersion tank 50 for carrying the wafer 2 immersed in the process liquid 3 and applying cleaning liquid to the surface of the wafer 2. In this embodiment, the single wafer processing equipment 60 includes a first rotary etching table 610, a second rotary etching table 620, and a rotary cleaning table 630. The second rotary etching stage 620 is arranged downstream of the first rotary etching stage 610, and the rotary cleaning stage 630 is arranged downstream of the second rotary etching stage 620, so the wafer 2 will be sequentially placed on the first rotary etching stage 610, The second rotary etching table 620, and the rotary cleaning table 630. When the wafer 2 is placed on the first rotary etching stage 610 and the second rotary etching stage 620, different chemical liquids are applied to the surface of the wafer 2 to remove the residue attached to the wafer 2 . Moreover, when the wafer 2 is placed on the rotating cleaning table 630, the wafer 2 will be applied with deionized water to the surface of the wafer 2 to remove the chemical liquid attached to the wafer 2. For example, please refer to Fig. 11, which shows the working schematic diagram of the rotating table of the wafer wet processing workstation 1 in Fig. 1. The rotating table in FIG. 11 may be a part of the first rotating etching table 610, the second rotating etching table 620, or the rotating cleaning table 630. The rotating table includes a rotating seat 601, a carrying table 602, and a liquid supply device 603. The wafer 2 is placed on the carrier 602. The rotating seat 601 can rotate around an axis to drive the wafer 2 placed on it to rotate. The liquid supply device 603 can provide a corresponding liquid (such as chemical liquid or deionized water) to the surface of the wafer 2. Therefore, the wafer 2 can be cleaned with wafer miniaturization and high-density wire layout by performing the above-mentioned series of cleaning processes in the wafer wet processing workstation 1.

綜上所述,本揭示的晶圓濕處理工作站可用於對晶圓執行化學浸泡、化學液噴洗、以及去離子水(DI Water)清洗乾燥等一系列清洗製程,以實現具有晶片微小化和高密度導線佈局的晶圓的清洗。並且,本揭示的晶圓濕處理工作站以垂直式浸泡槽取代水平式浸泡槽。藉此設計,晶圓採垂直方向立於浸泡槽中,促使上下循環流動之製程液體能充分接觸各晶圓之表面,如此可防止使用水平浸泡槽因晶圓採水平放置而阻礙藥液流動與氣泡排放,進而導致循環流場不良與雜質回沾等問題。另一方面,本揭示藉由提供垂直式浸泡槽和與浸泡槽相關聯的機械手臂,並將浸泡槽、機械手臂、和晶圓濕處理工作站的控制器連結,如此可精確地控制晶圓的浸泡時間。例如,先進行浸泡之晶圓,在到達預定之浸泡時間時,控制器就可命令機械手臂先行將此晶圓由垂直浸泡槽中取出,如此即可實現精確地控制各個晶圓於化學浸泡槽之浸泡時間。In summary, the wafer wet processing workstation of the present disclosure can be used to perform a series of cleaning processes such as chemical soaking, chemical liquid spraying, and DI Water cleaning and drying on the wafers, so as to realize the miniaturization and miniaturization of wafers. Cleaning of wafers with high-density wire layout. In addition, the wafer wet processing workstation of the present disclosure replaces the horizontal immersion tank with a vertical immersion tank. With this design, the wafers are placed in the immersion tank in the vertical direction, so that the process liquid circulating up and down can fully contact the surface of each wafer. This prevents the use of a horizontal immersion tank from obstructing the flow of the chemical liquid due to the horizontal placement of the wafer. Air bubbles are discharged, which in turn leads to problems such as poor circulating flow field and impurities back-wetting. On the other hand, the present disclosure provides a vertical immersion tank and a robot arm associated with the immersion tank, and connects the immersion tank, the robot arm, and the controller of the wafer wet processing station, so that the wafer can be precisely controlled. Soaking time. For example, for a wafer that is immersed first, when the predetermined immersion time is reached, the controller can instruct the robotic arm to first remove the wafer from the vertical immersion tank, so that precise control of each wafer in the chemical immersion tank can be achieved The soaking time.

以上僅是本揭示的較佳實施方式,應當指出,對於所屬領域技術人員,在不脫離本揭示原理的前提下,還可以做出若干改進和潤飾,這些改進和潤飾也應視爲本揭示的保護範圍。The above are only the preferred embodiments of the present disclosure. It should be pointed out that for those skilled in the art, without departing from the principles of the present disclosure, several improvements and modifications can be made, and these improvements and modifications should also be regarded as the present disclosure. protected range.

1:晶圓濕處理工作站 10:入料口 30:傳送裝置 31:伸縮臂 40:機械手臂 41:基座 42:升降部 43:伸縮部 431:第一段 432:第二段 44:翻轉部 45:保持部 451:夾持臂 452:夾爪 453:凹槽 46:翻轉動作 50:浸泡槽 51:附加組件 60:單晶圓處理設備 610:第一旋轉蝕刻台 620:第二旋轉蝕刻台 630:旋轉清洗台 601:旋轉座 602:承載台 603:液體供應裝置 70:出料口 90:卡匣 91:卡槽 92:橫桿 2:晶圓 3:製程液體 X、Y、Z:方向1: Wafer wet processing workstation 10: Inlet 30: Conveyor 31: Telescopic boom 40: mechanical arm 41: Pedestal 42: Lifting part 43: Telescopic part 431: first paragraph 432: second paragraph 44: Flip part 45: holding part 451: Clamping arm 452: Gripper 453: groove 46: flip action 50: Soaking tank 51: additional components 60: Single wafer processing equipment 610: The first rotary etching table 620: The second rotary etching table 630: Rotary cleaning table 601: Rotating seat 602: Carrier 603: Liquid Supply Device 70: Outlet 90: cassette 91: card slot 92: Crossbar 2: Wafer 3: Process liquid X, Y, Z: direction

第1圖顯示本揭示之較佳實施例之晶圓濕處理工作站之示意圖; 第2圖顯示第1圖之晶圓濕處理工作站之機械手臂之第一動作示意圖; 第3圖顯示第1圖之晶圓濕處理工作站之機械手臂之第二動作示意圖; 第4圖顯示第3圖之晶圓濕處理工作站之立體示意圖; 第5圖顯示第4圖之晶圓濕處理工作站之局部剖面圖; 第6圖顯示機械手臂之夾爪之側視圖; 第7圖顯示第1圖之晶圓濕處理工作站之機械手臂之第三動作示意圖; 第8圖顯示第1圖之晶圓濕處理工作站之機械手臂與傳送裝置之第一對應動作示意圖; 第9圖顯示第1圖之晶圓濕處理工作站之機械手臂與傳送裝置之第二對應動作示意圖; 第10圖顯示第1圖之晶圓濕處理工作站之機械手臂與傳送裝置之第二對應動作示意圖;以及 第11圖顯示第1圖之晶圓濕處理工作站之旋轉台之工作示意圖。 Figure 1 shows a schematic diagram of a wafer wet processing workstation according to a preferred embodiment of the present disclosure; Figure 2 shows a schematic diagram of the first action of the robotic arm of the wafer wet processing workstation in Figure 1; Figure 3 shows a schematic diagram of the second action of the robotic arm of the wafer wet processing workstation in Figure 1; Figure 4 shows a three-dimensional schematic diagram of the wafer wet processing workstation shown in Figure 3; Figure 5 shows a partial cross-sectional view of the wafer wet processing workstation in Figure 4; Figure 6 shows the side view of the gripper of the robotic arm; Figure 7 shows a schematic diagram of the third action of the robotic arm of the wafer wet processing workstation in Figure 1; Figure 8 shows a schematic diagram of the first corresponding action of the robotic arm and the transfer device of the wafer wet processing workstation in Figure 1; Figure 9 shows a schematic diagram of the second corresponding action of the robotic arm and the transfer device of the wafer wet processing workstation in Figure 1; Figure 10 shows a schematic diagram of the second corresponding action of the robotic arm and the transfer device of the wafer wet processing workstation in Figure 1; and Figure 11 shows the working schematic diagram of the rotating table of the wafer wet processing workstation in Figure 1.

1:晶圓濕處理工作站 1: Wafer wet processing workstation

10:入料口 10: Inlet

30:傳送裝置 30: Conveyor

40:機械手臂 40: mechanical arm

50:浸泡槽 50: Soaking tank

60:單晶圓處理設備 60: Single wafer processing equipment

610:第一旋轉蝕刻台 610: The first rotary etching table

620:第二旋轉蝕刻台 620: The second rotary etching table

630:旋轉清洗台 630: Rotary cleaning table

70:出料口 70: Outlet

Claims (10)

一種晶圓濕處理工作站,包含: 一浸泡槽; 一卡匣,設置在該浸泡槽內,包含複數個卡槽,且每一該卡槽放置一晶圓,其中該複數個卡槽沿著一水平方向間隔排列,使得該晶圓以其板面垂直於一水平面的方式浸入預先注滿製程液體的該浸泡槽內; 一機械手臂,包含: 一保持部,其中該晶圓保持於該保持部上;以及 一翻轉部,與該保持部連接,其中該翻轉部控制該保持部相對於該水平面翻轉,並且藉由該翻轉部將該保持部翻轉90度而使得該晶圓以其板面平行於該水平面的方式傳送;以及 一單晶圓處理設備,設置在該浸泡槽之下游,其中浸泡過該製程液體之該晶圓放置在該單晶圓處理設備,並且該單晶圓處理設備施加一清洗液體至該晶圓之該板面。 A wafer wet processing workstation, including: A soaking tank; A cassette is set in the soaking tank, and includes a plurality of card slots, and each of the card slots is placed with a wafer, wherein the plurality of card slots are arranged at intervals along a horizontal direction, so that the wafer is arranged on its surface Immerse into the soaking tank pre-filled with process liquid in a manner perpendicular to a horizontal plane; A robotic arm, including: A holding part, wherein the wafer is held on the holding part; and A turning part connected to the holding part, wherein the turning part controls the holding part to be turned over relative to the horizontal plane, and turning the holding part 90 degrees by the turning part makes the wafer parallel to the horizontal plane with its plate surface Way of delivery; and A single wafer processing equipment is arranged downstream of the immersion tank, wherein the wafer immersed in the process liquid is placed in the single wafer processing equipment, and the single wafer processing equipment applies a cleaning liquid to the wafer The board surface. 如請求項1之晶圓濕處理工作站,其中該機械手臂之該保持部包含: 一對夾持臂,彼此間隔設置;以及 至少一對夾爪,彼此面對設置,其中每一該夾爪對應設置在其中之一該夾持臂上,並且每一該夾爪藉由與該晶圓之邊緣接觸以將該晶圓夾持在該對夾爪之間。 For example, the wafer wet processing workstation of claim 1, wherein the holding part of the robot arm includes: A pair of clamping arms, spaced apart from each other; and At least a pair of clamping jaws are arranged facing each other, wherein each clamping jaw is correspondingly arranged on one of the clamping arms, and each clamping jaw contacts the edge of the wafer to clamp the wafer Hold between the pair of jaws. 如請求項2之晶圓濕處理工作站,其中每一該夾爪包含一凹槽,且該晶圓固定在該凹槽中。For example, the wafer wet processing workstation of claim 2, wherein each of the clamping jaws includes a groove, and the wafer is fixed in the groove. 如請求項2之晶圓濕處理工作站,其中該對夾持臂能相對彼此移動以改變該對夾持臂之間的距離。Such as the wafer wet processing workstation of claim 2, wherein the pair of clamping arms can move relative to each other to change the distance between the pair of clamping arms. 如請求項2之晶圓濕處理工作站,其中該晶圓濕處理工作站還包含一傳送裝置,與該機械手臂相鄰且設置在該浸泡槽與該單晶圓處理設備之間,其中該傳送裝置將浸泡過該製程液體之該晶圓移送至該單晶圓處理設備;以及 其中該傳送裝置包含一伸縮臂,且該伸縮臂可相對該機械手臂之該保持部移動以延伸至該對夾持臂之間。 For example, the wafer wet processing workstation of claim 2, wherein the wafer wet processing workstation further includes a conveying device adjacent to the robotic arm and arranged between the soaking tank and the single wafer processing equipment, wherein the conveying device Transferring the wafer soaked in the process liquid to the single wafer processing equipment; and The transmission device includes a telescopic arm, and the telescopic arm can move relative to the holding part of the mechanical arm to extend between the pair of clamping arms. 如請求項1之晶圓濕處理工作站,其中該機械手臂還包含一升降部,帶動該保持部沿著一垂直方向升降,並且藉由該升降部的上升移動而帶動該保持部沿著該垂直方向從該卡匣取出該晶圓,或者是藉由該升降部的下降移動而帶動該保持部沿著該垂直方向將該晶圓放入該卡匣。For example, the wafer wet processing workstation of claim 1, wherein the robot arm further includes a lifting part that drives the holding part to rise and fall along a vertical direction, and the lifting part drives the holding part along the vertical direction The wafer is taken out from the cassette in the direction, or the holding portion is driven to place the wafer into the cassette along the vertical direction by the descending movement of the lifting portion. 如請求項1之晶圓濕處理工作站,其中該機械手臂還包含一伸縮部,與該翻轉部連接,帶動該保持部沿著該水平方向移動。For example, the wafer wet processing workstation of claim 1, wherein the robot arm further includes a telescopic part connected with the turning part to drive the holding part to move along the horizontal direction. 如請求項1之晶圓濕處理工作站,其中每一該晶圓與該卡匣的接觸點小於等於四個。For example, the wafer wet processing workstation of claim 1, wherein the contact points between each wafer and the cassette are less than or equal to four. 如請求項1之晶圓濕處理工作站,其中該單晶圓處理設備包含: 一旋轉蝕刻台,施加一化學液體至該晶圓之該板面以去除附著在該晶圓上之殘留物;以及 一旋轉清洗台,設置在該旋轉蝕刻台之下游,施加去離子水至該晶圓之該板面以去除附著在該晶圓上之該化學液體。 Such as the wafer wet processing workstation of claim 1, wherein the single wafer processing equipment includes: A rotary etching table, applying a chemical liquid to the surface of the wafer to remove residues attached to the wafer; and A rotary cleaning table is arranged downstream of the rotary etching table, and deionized water is applied to the plate surface of the wafer to remove the chemical liquid adhering to the wafer. 如請求項1之晶圓濕處理工作站,其中該浸泡槽包含一震動器,與該卡匣連接,且該震動器使該卡匣震動並連帶地使放置在該卡匣上之該晶圓震動。For example, the wafer wet processing workstation of claim 1, wherein the immersion tank includes a vibrator connected to the cassette, and the vibrator vibrates the cassette and also vibrates the wafer placed on the cassette .
TW108139765A 2019-11-01 2019-11-01 Wafer wet processing station TWI710017B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW108139765A TWI710017B (en) 2019-11-01 2019-11-01 Wafer wet processing station

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW108139765A TWI710017B (en) 2019-11-01 2019-11-01 Wafer wet processing station

Publications (2)

Publication Number Publication Date
TWI710017B true TWI710017B (en) 2020-11-11
TW202119491A TW202119491A (en) 2021-05-16

Family

ID=74202390

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108139765A TWI710017B (en) 2019-11-01 2019-11-01 Wafer wet processing station

Country Status (1)

Country Link
TW (1) TWI710017B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115966504A (en) * 2021-10-08 2023-04-14 细美事有限公司 Apparatus and method for processing substrate

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI812409B (en) * 2022-08-17 2023-08-11 凱爾迪科技股份有限公司 Horizontal and vertical transpose device
TWI822605B (en) * 2023-03-02 2023-11-11 弘塑科技股份有限公司 Multifunctional single wafer soaking, spinning, and cleaning device and wafer processing method

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001024950A1 (en) 1999-10-06 2001-04-12 Speedfam-Ipec Corporation Method and apparatus for semiconductor cleaning
US20020134410A1 (en) * 2001-03-23 2002-09-26 Will Be S & T Co., Ltd. Semiconductor wafer cleaning apparatus
TW200301534A (en) * 2001-12-31 2003-07-01 Applied Materials Inc Cassette and workpiece handler characterization tool
TW200407944A (en) * 2002-08-28 2004-05-16 Scp Germany Gmbh Apparatus and method for processing substrate
TW200522192A (en) * 2003-09-18 2005-07-01 Nec Lcd Technologies Ltd Apparatus for processing substrate and method of doing the same
TW200531134A (en) * 2003-09-18 2005-09-16 Nec Lcd Technologies Ltd Method of processing substrate and chemical used in the same
TW200731370A (en) * 2005-12-05 2007-08-16 Semitool Inc Apparatus and method for cleaning and drying a container for semiconductor workpieces
US20160281255A1 (en) * 2009-06-17 2016-09-29 Novellus Systems, Inc. Methods and apparatus for wetting pretreatment for through resist metal plating
TWM589894U (en) * 2019-11-01 2020-01-21 弘塑科技股份有限公司 Wafer wet processing station

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001024950A1 (en) 1999-10-06 2001-04-12 Speedfam-Ipec Corporation Method and apparatus for semiconductor cleaning
US20020134410A1 (en) * 2001-03-23 2002-09-26 Will Be S & T Co., Ltd. Semiconductor wafer cleaning apparatus
TW200301534A (en) * 2001-12-31 2003-07-01 Applied Materials Inc Cassette and workpiece handler characterization tool
TW200407944A (en) * 2002-08-28 2004-05-16 Scp Germany Gmbh Apparatus and method for processing substrate
TW200522192A (en) * 2003-09-18 2005-07-01 Nec Lcd Technologies Ltd Apparatus for processing substrate and method of doing the same
TW200531134A (en) * 2003-09-18 2005-09-16 Nec Lcd Technologies Ltd Method of processing substrate and chemical used in the same
TW200731370A (en) * 2005-12-05 2007-08-16 Semitool Inc Apparatus and method for cleaning and drying a container for semiconductor workpieces
US20160281255A1 (en) * 2009-06-17 2016-09-29 Novellus Systems, Inc. Methods and apparatus for wetting pretreatment for through resist metal plating
US20180023209A1 (en) * 2009-06-17 2018-01-25 Novellus Systems, Inc. Methods and apparatus for wetting pretreatment for through resist metal plating
TWM589894U (en) * 2019-11-01 2020-01-21 弘塑科技股份有限公司 Wafer wet processing station

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115966504A (en) * 2021-10-08 2023-04-14 细美事有限公司 Apparatus and method for processing substrate

Also Published As

Publication number Publication date
TW202119491A (en) 2021-05-16

Similar Documents

Publication Publication Date Title
TWM589894U (en) Wafer wet processing station
US11676811B2 (en) Substrate cleaning device, substrate processing apparatus, substrate cleaning method and substrate processing method
KR100927301B1 (en) Substrate Processing Apparatus and Substrate Processing Method
CN108074842B (en) Substrate wet processing device
KR100917304B1 (en) Substrate Processing Equipment
CN211017026U (en) Wafer wet processing workstation
KR100934318B1 (en) Substrate Processing Equipment
KR100963361B1 (en) Substrate Processing Equipment
US11101157B2 (en) Substrate processing system
TWI710017B (en) Wafer wet processing station
US20090070946A1 (en) Apparatus for and method of processing substrate
US12322586B2 (en) Substrate cleaning method and substrate processing method
JP5552462B2 (en) Peeling system, peeling method, program, and computer storage medium
JP7291030B2 (en) Substrate processing equipment
CN112786481A (en) Wafer wet processing workstation
WO2020050009A1 (en) Substrate processing device
TW202213606A (en) Substrate processing apparatus and substrate processing method
KR20190034726A (en) Nozzle unit and apparatus for treating substrate
TWI907901B (en) Substrate processing device and substrate processing method
CN115602596B (en) Substrate alignment device, substrate processing device, substrate alignment method, and substrate processing method
TW202407781A (en) How to transport wafers
CN118248585A (en) Substrate processing device and substrate processing method
WO2023248416A1 (en) Pre-wetting module and pre-wetting method
CN120380579A (en) Substrate cleaning device and substrate cleaning method