TWI710017B - Wafer wet processing station - Google Patents
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Abstract
Description
本揭示是關於一種工作站,特別是關於一種晶圓濕處理工作站。This disclosure relates to a workstation, especially a wafer wet processing workstation.
隨者半導體元件的微小化(miniaturization)以及晶片的導線連接(interconnection)圖案密度之增加,導線逐漸朝向更小線寬與線距(fine line width and space)方向發展,這使得半導體清洗蝕刻的製程面臨更加嚴峻之挑戰。目前晶圓或基板通常需要進行多道清洗與蝕刻處理製程才能確保最終清洗蝕刻效果能滿足元件之製程規格需求,尤其在光阻去除(photoresist stripping)、金屬剝離(metal lift-off)、以及在晶圓解鍵合(post wafer de-bonding) 之後,晶圓表面之黏著劑層(adhesive layer)與剝離劑層(release layer)之殘留物的清洗去除製程,無法只依賴單一道製程就完成清洗目的,必須結合晶圓浸泡與單晶圓噴洗設備。With the miniaturization of semiconductor components and the increase in the pattern density of interconnection patterns of chips, the wires gradually develop in the direction of smaller line width and fine line width and space, which makes the semiconductor cleaning and etching process Facing more severe challenges. At present, wafers or substrates usually require multiple cleaning and etching processes to ensure that the final cleaning and etching effect can meet the process specifications of the components, especially in photoresist stripping, metal lift-off, and in After the wafer de-bonding (post wafer de-bonding), the cleaning and removal process of the residues of the adhesive layer and the release layer on the surface of the wafer cannot be completed by a single process. Must combine wafer immersion and single wafer spray cleaning equipment.
另一方面,一般的晶圓浸泡設備是先將複數個晶圓,由入料口經傳送裝置,將晶圓一次一片傳送放置在卡匣後,接著將卡匣向下移動以浸入浸泡槽。經浸泡一段製程時間後,將卡匣連同該等晶圓一起從該浸泡槽向上移動,以離開浸泡槽。最後,藉由持取機構將浸泡後的晶圓逐一地送往下一道製程。然而,在晶圓浸泡設備中,如果晶圓是採水平放置,在卡匣完全浸泡在浸泡槽內之情況下,持取機構是無法將晶圓個別且單獨地取出,必須等到卡匣上升離開浸泡槽之後,持取機構才能進入卡匣取出晶圓。然而,在同一個卡匣中,較先取出的晶圓往往會有浸泡不足的問題,而較後取出的晶圓則容易有浸泡過久而導致晶圓遭受損壞。也就是說,採用水平式晶圓浸泡設備無法精確控制各個晶圓於化學浸泡槽之浸泡時間,容易影響晶圓浸泡製程之良率。On the other hand, the general wafer immersion equipment first transfers a plurality of wafers from the feed port through the conveying device, and places the wafers in the cassette one at a time, and then moves the cassette down to be immersed in the immersion tank. After soaking for a period of processing time, the cassette together with the wafers are moved upward from the soaking tank to leave the soaking tank. Finally, the immersed wafers are sent to the next process one by one by the holding and taking mechanism. However, in the wafer immersion equipment, if the wafers are placed horizontally and the cassette is completely immersed in the immersion tank, the holding and picking mechanism cannot take out the wafers individually and individually. It must wait until the cassette is lifted and left. After the soaking tank, the holding and taking mechanism can enter the cassette to take out the wafer. However, in the same cassette, the wafers taken out earlier often suffer from insufficient immersion, while the wafers taken out later are prone to be soaked for too long and cause damage to the wafers. In other words, the horizontal wafer immersion equipment cannot precisely control the immersion time of each wafer in the chemical immersion tank, which easily affects the yield of the wafer immersion process.
有鑑於此,有必要提出一種晶圓濕處理工作站,以解決習知技術中存在的問題。In view of this, it is necessary to provide a wafer wet processing workstation to solve the problems in the prior art.
為解決上述習知技術之問題,本揭示之目的在於提供一種晶圓濕處理工作站,其適用於清洗具有晶片微小化和高密度導線佈局的晶圓以去除在先前製程中附著在晶圓表面的殘留物,並且能精確地控制每一片晶圓的化學浸泡的時間。In order to solve the above-mentioned problems of the conventional technology, the purpose of the present disclosure is to provide a wafer wet processing workstation, which is suitable for cleaning wafers with chip miniaturization and high-density wire layouts to remove the wafers attached to the surface of the wafer during the previous process. Residues, and can accurately control the chemical immersion time of each wafer.
為達成上述目的,本揭示提供一種晶圓濕處理工作站,包含一浸泡槽、一卡匣、一機械手臂、和一單晶圓處理設備。卡匣設置在該浸泡槽內,包含複數個卡槽,且每一該卡槽放置一晶圓,其中該複數個卡槽沿著一水平方向間隔排列,使得該晶圓以其板面垂直於一水平面的方式浸入預先注滿製程液體的該浸泡槽內。機械手臂包含一保持部和一翻轉部。該晶圓保持於該保持部上。翻轉部與該保持部連接,其中該翻轉部控制該保持部相對於該水平面翻轉,並且藉由該翻轉部將該保持部翻轉90度而使得該晶圓以其板面平行於該水平面的方式傳送。單晶圓處理設備設置在該浸泡槽之下游,其中浸泡過該製程液體之該晶圓放置在該單晶圓處理設備,並且該單晶圓處理設備施加一清洗液體至該晶圓之該板面。To achieve the above objective, the present disclosure provides a wafer wet processing workstation, which includes a immersion tank, a cassette, a robotic arm, and a single wafer processing equipment. The cassette is arranged in the immersion tank, including a plurality of card slots, and each of the card slots is placed with a wafer, wherein the plurality of card slots are arranged at intervals along a horizontal direction, so that the wafer is perpendicular to the board surface Immerse in the soaking tank pre-filled with process liquid in a horizontal plane. The mechanical arm includes a holding part and a turning part. The wafer is held on the holding part. The turning portion is connected to the holding portion, wherein the turning portion controls the turning of the holding portion relative to the horizontal plane, and the turning portion turns the
在一較佳實施例中, 該機械手臂之該保持部包含一對夾持臂和至少一對夾爪。該對夾持臂彼此間隔設置。該對夾爪彼此面對設置,其中每一該夾爪對應設置在其中之一該夾持臂上,並且每一該夾爪藉由與該晶圓之邊緣接觸以將該晶圓夾持在該對夾爪之間。In a preferred embodiment, the holding portion of the robotic arm includes a pair of clamping arms and at least a pair of clamping jaws. The pair of clamping arms are spaced apart from each other. The pair of clamping jaws are arranged facing each other, and each of the clamping jaws is correspondingly arranged on one of the clamping arms, and each of the clamping jaws is in contact with the edge of the wafer to clamp the wafer on Between the pair of jaws.
在一較佳實施例中,每一該夾爪包含一凹槽,其中該晶圓固定在該凹槽內。In a preferred embodiment, each of the clamping jaws includes a groove, wherein the wafer is fixed in the groove.
在一較佳實施例中,該對夾持臂能相對彼此移動以改變該對夾持臂之間的距離。In a preferred embodiment, the pair of clamping arms can move relative to each other to change the distance between the pair of clamping arms.
在一較佳實施例中,該晶圓濕處理工作站還包含一傳送裝置,與該機械手臂相鄰且設置在該浸泡槽與該單晶圓處理設備之間,其中該傳送裝置將浸泡過該製程液體之該晶圓移送至該單晶圓處理設備。該傳送裝置包含一伸縮臂,且該伸縮臂可相對該機械手臂之該保持部移動以延伸至該對夾持臂之間。In a preferred embodiment, the wafer wet processing workstation further includes a conveying device adjacent to the robotic arm and arranged between the soaking tank and the single wafer processing equipment, wherein the conveying device will immerse the The wafer of the process liquid is transferred to the single wafer processing equipment. The conveying device includes a telescopic arm, and the telescopic arm can move relative to the holding part of the robot arm to extend between the pair of clamping arms.
在一較佳實施例中,該機械手臂還包含一升降部,帶動該保持部沿著一垂直方向升降,並且藉由該升降部的上升移動而帶動該保持部沿著該垂直方向從該卡匣取出該晶圓,或者是藉由該升降部的下降移動而帶動該保持部沿著該垂直方向將該晶圓放入該卡匣。In a preferred embodiment, the robotic arm further includes a lifting portion, which drives the holding portion to rise and fall in a vertical direction, and the lifting movement of the lifting portion drives the holding portion to move from the card along the vertical direction. The cassette takes out the wafer, or the holding part is driven to put the wafer into the cassette along the vertical direction by the descending movement of the lifting part.
在一較佳實施例中,該機械手臂還包含一伸縮部,與該翻轉部連接,帶動該保持部沿著該水平方向移動。In a preferred embodiment, the robot arm further includes a telescopic part connected with the turning part to drive the holding part to move along the horizontal direction.
在一較佳實施例中,每一該晶圓與該卡匣的接觸點小於等於四個。In a preferred embodiment, the contact points between each wafer and the cassette are less than or equal to four.
在一較佳實施例中,該單晶圓處理設備包含一旋轉蝕刻台和一旋轉清洗台。旋轉蝕刻台施加一化學液體至該晶圓之該板面以去除附著在該晶圓上之殘留物。旋轉清洗台設置在該旋轉蝕刻台之下游,施加去離子水至該晶圓之該板面以去除附著在該晶圓上之該化學液體。In a preferred embodiment, the single wafer processing equipment includes a rotary etching table and a rotary cleaning table. The rotary etching table applies a chemical liquid to the plate surface of the wafer to remove the residue attached to the wafer. The rotary cleaning table is arranged downstream of the rotary etching table, and deionized water is applied to the plate surface of the wafer to remove the chemical liquid adhering to the wafer.
在一較佳實施例中,該浸泡槽包含一震動器,與該卡匣連接,其中該震動器使該卡匣震動並連帶地使放置在該卡匣上之該晶圓震動。In a preferred embodiment, the immersion tank includes a vibrator connected to the cassette, wherein the vibrator vibrates the cassette and also vibrates the wafer placed on the cassette.
相較於先前技術,本揭示之晶圓濕處理工作站可對晶圓執行化學浸泡、化學液噴洗、以及去離子水清洗乾燥等一系列清洗製程,以實現具有晶片微小化和高密度導線佈局之晶圓的清洗。並且,本揭示藉由提供垂直式浸泡槽和與浸泡槽相關聯的機械手臂,並將浸泡槽、機械手臂、和晶圓濕處理工作站的控制器連結,如此可精確地控制晶圓的浸泡時間。Compared with the prior art, the wafer wet processing workstation of the present disclosure can perform a series of cleaning processes such as chemical immersion, chemical liquid spray cleaning, and deionized water cleaning and drying on the wafers to achieve chip miniaturization and high-density wire layout Of wafer cleaning. In addition, the present disclosure provides a vertical immersion tank and a robot arm associated with the immersion tank, and connects the immersion tank, the robot arm, and the controller of the wafer wet processing station, so that the wafer immersion time can be precisely controlled .
爲了讓本揭示之上述及其他目的、特徵、優點能更明顯易懂,下文將特舉本揭示較佳實施例,並配合所附圖式,作詳細說明如下。In order to make the above and other objectives, features, and advantages of the present disclosure more obvious and understandable, the following will describe the preferred embodiments of the present disclosure in conjunction with the accompanying drawings in detail.
請參照第1圖,其顯示本揭示之較佳實施例之晶圓濕處理工作站1之示意圖。晶圓濕處理工作站1包含入料口10、傳送裝置30、機械手臂40、浸泡槽50、單晶圓處理設備60、出料口70。傳送裝置30配置為可在入料口10、浸泡槽50、單晶圓處理設備60、和出料口70之間移動。傳送裝置30與機械手臂40相鄰。機械手臂40之基座固定在浸泡槽50之一側,並且機械手臂40可相對於浸泡槽50執行一系列作動,具體作動將於後詳述。Please refer to FIG. 1, which shows a schematic diagram of a wafer wet processing workstation 1 according to a preferred embodiment of the present disclosure. The wafer wet processing workstation 1 includes an
本揭示之晶圓濕處理工作站1可用於對晶圓執行化學浸泡、化學液噴洗、以及去離子水(DI Water)清洗乾燥等一系列清洗製程。以去光阻製程(photoresist stripping)為例,待處理的晶圓從入料口10輸入,並且藉由傳送裝置30將待處理的晶圓傳送至機械手臂40。機械手臂40將晶圓放入浸泡槽50以進行化學浸泡,使得製程液體滲透(penetration)進入光阻,進而促使光阻膨脹(swelling)與溶解(dissolution)。晶圓浸泡完成之後,機械手臂40將晶圓取出並傳送回到傳送裝置30,並且藉由傳送裝置30將晶圓傳送至單晶圓處理設備60。接著,依序利用水平式單晶圓旋轉設備對晶圓施加化學藥液以將光阻殘留物去除,以及施加去離子水以去除殘留的化學液,如此才能徹底完成晶圓之清洗。最後,藉由傳送裝置30將清洗完畢的晶圓傳送至出料口70以進行後續製程。後續將詳細描述在晶圓濕處理工作站1中,晶圓的傳送與相關的設備之作動。The wafer wet processing workstation 1 of the present disclosure can be used to perform a series of cleaning processes such as chemical immersion, chemical liquid spray cleaning, and DI Water cleaning and drying of the wafer. Taking the photoresist stripping process as an example, the wafer to be processed is input from the
請參照第2圖,其顯示第1圖之晶圓濕處理工作站1之機械手臂40之第一動作示意圖。晶圓濕處理工作站1還包含設置在浸泡槽50內之卡匣90。卡匣90包含複數個卡槽91,且每一卡槽91用於放置一片晶圓2。應當注意的是,該複數個卡槽91沿著水平方向(即X方向)間隔排列,使得晶圓2以其板面垂直於水平面(即XY平面)的方式浸入預先注滿製程液體3的浸泡槽50內。本揭示的晶圓濕處理工作站1是以垂直式浸泡槽50(vertical soaking tank)取代水平式浸泡槽(horizontal soaking tank)。藉此設計,複數個晶圓2採垂直方向立於浸泡槽50中,促使上下循環流動之製程液體3能充分接觸各晶圓2之表面,如此可防止使用水平浸泡槽因晶圓採水平放置而阻礙藥液流動與氣泡排放,進而導致循環流場不良與雜質回沾等問題。此外,浸泡槽50包含附加組件51(包含如震動器、加熱器、循環管路、過濾器等),使得浸泡槽50具備藥液加熱(heating)、循環(circulation)、過濾(filtration)、震動(agitation)等功能,促使藥液保持流動並充分接觸各晶圓2之表面。附加組件51之震動器與卡匣90連接且為可調式。藉由可調式震動器來調整震動頻率與幅度,使得卡匣90震動並連帶地使放置在卡匣90上之晶圓2震動。如此,藉由晶圓2在垂直浸泡製程中產生適當震動可促進晶圓2與製程液體3之反應,並且可防止浸泡槽50之製程液體3在晶圓2的邊緣處產生流場阻礙。Please refer to FIG. 2, which shows the first action schematic diagram of the
如第2圖所示,機械手臂40用於取放和移送晶圓2。機械手臂40包含基座41、升降部42、伸縮部43、翻轉部44、和保持部45。基座41固定在浸泡槽50之一側邊。升降部42設置在基座41上,用於帶動伸縮部43、翻轉部44、和保持部45一起沿著垂直方向(即Z方向)升降。保持部45用於取放晶圓2並且將晶圓2保持於其上。並且,藉由升降部42的上升移動而帶動保持部45沿著垂直方向從卡匣90取出晶圓2,或者是藉由升降部42的下降移動而帶動保持部45沿著垂直方向將晶圓2放入卡匣90。翻轉部44連接在伸縮部43和保持部45之間。伸縮部43用於帶動翻轉部44和保持部45沿著水平方向移動。具體來說,伸縮部43包含第一段431和第二段432。藉由控制第一段431朝向第二段432靠近可帶動翻轉部44和保持部45朝著靠近基座41的方向水平移動。又,藉由控制第一段431遠離第二段432可帶動翻轉部44和保持部45朝著遠離基座41的方向水平移動。翻轉部44用於控制保持部45相對於水平面作翻轉動作46。應當理解的是,機械手臂40包含感測器、控制器、驅動器等多種元件以實現升降部42的升降作動、伸縮部43的伸縮作動、翻轉部44的翻轉作動、保持部45對晶圓2的取放作動等。As shown in FIG. 2, the
請參照第3圖和第4圖,第3圖顯示第1圖之晶圓濕處理工作站1之機械手臂40之第二動作示意圖,以及第4圖顯示第3圖之晶圓濕處理工作站1之立體示意圖。如第3圖和第4圖所示,當晶圓2浸泡特定時間後,機械手臂40會將浸泡完成的晶圓2取出。具體來說,機械手臂40之翻轉部44繞軸轉動以帶動保持部45相對於水平面翻轉90度,使得保持部45轉變成垂直於水平面。接著,機械手臂40之伸縮部43藉由第一段431和第二段432的相對運動來帶動保持部45移動至待取出的晶圓2的上方位置。接著,機械手臂40之升降部42控制保持部45沿著垂直方向下移進而抓取到目標晶圓2。Please refer to Figures 3 and 4. Figure 3 shows the second action schematic diagram of the
請參照第5圖和第6圖,第5圖顯示第4圖之晶圓濕處理工作站1之局部剖面圖,以及第6圖顯示機械手臂40之夾爪452之側視圖。如第5圖所示,機械手臂40之保持部45包含一對夾持臂451和兩對夾爪452。該對夾持臂451彼此相鄰且間隔設置。兩對夾爪452中的每一對夾爪452彼此面對設置,並且每一夾爪452對應設置在其中之一夾持臂451上。也就是說,在本實施例中,每一夾持臂451上連接有兩個夾爪452,且夾持臂451上的夾爪452與另一夾持臂451上的另一夾爪452彼此對應(例如,當保持部45垂直於水平面時,該對夾爪452位在相同的水平高度)。此外,保持部45抓取到目標晶圓2意旨每一夾爪452藉由與晶圓2之邊緣接觸以將晶圓2夾持在該對夾爪452之間。具體來說,如第6圖所示,每一夾爪452包含一個凹槽453,並且晶圓2之邊緣是被固定在夾爪452的凹槽453中。應當注意的是,本實施例的夾爪452的數量為四個,惟不侷限於此。Please refer to FIGS. 5 and 6. FIG. 5 shows a partial cross-sectional view of the wafer wet processing workstation 1 in FIG. 4, and FIG. 6 shows a side view of the
如第5圖所示,卡匣90包含四個橫桿92。每一橫桿90上形成有一排卡槽91以供晶圓2放置。並且,放置在卡匣90中的晶圓2只會與橫桿92接觸。也就是說,在本實施例中,每一晶圓20與卡匣90的接觸點為四個。應當理解的是,在其他實施例中亦可採用其他數量的接觸點的設計。較佳地,每一晶圓20與卡匣90的接觸點小於等於四個。在本揭示中,通過將卡匣90設計為與晶圓2之邊緣之接觸點只有小於等於四個的接觸 ,如此可儘量減少卡匣90阻礙製程液體3流動之面積。此外,卡匣90之橫桿92設置為對應於晶圓2之底部且不接觸晶圓2之左右兩側。因此,機械手臂40之保持部45可順利地伸入卡匣90內部而不會與卡匣90發生結構上的干涉。As shown in FIG. 5, the
請參照第7圖,其顯示第1圖之晶圓濕處理工作站1之機械手臂40之第三動作示意圖。當機械手臂40之保持部45抓取到目標晶圓2之後,機械手臂40之升降部42控制保持部45沿著垂直方向上升進而從卡匣90取出晶圓2。在本揭示中,由於機械手臂40取出晶圓2時,晶圓2是以其板面垂直於水平面的方式沿著垂直方向上升,故製程液體3容易因重力而流回浸泡槽60內,所以可避免晶圓2上升時,晶圓2之表面夾帶大量製程液體3,導致製程液體3浪費與污染機械手臂40。並且,本揭示的卡匣90不需要移動(如移動至離開浸泡槽50),而是藉由機械手臂40進入浸泡槽50以進行晶圓的取放。Please refer to FIG. 7, which shows a schematic diagram of the third action of the
請參照第8圖,其顯示第1圖之晶圓濕處理工作站1之機械手臂40與傳送裝置30之第一對應動作示意圖。機械手臂40從卡匣90中取出晶圓2之後,機械手臂40之翻轉部44將保持部45翻轉90度而使得晶圓2以其板面平行於水平面的方式傳送。接著,機械手臂40將浸泡後的晶圓傳送至傳送裝置30。Please refer to FIG. 8, which shows the first corresponding action diagram of the
請參照第9圖和第10圖,第9圖顯示第1圖之晶圓濕處理工作站1之機械手臂40與傳送裝置30之第二對應動作示意圖,以及第10圖顯示第1圖之晶圓濕處理工作站1之機械手臂40與傳送裝置30之第二對應動作示意圖。如第9圖所示,傳送裝置30包含伸縮臂31。伸縮臂31可相對機械手臂40之保持部45移動。具體來說,當要取走機械手臂40上的晶圓時,傳送裝置30之伸縮臂31延伸至機械手臂40之該對夾持臂451之間且位在晶圓2之下方。並且,伸縮臂31可採用適當的元件將晶圓2保持於其上,例如真空吸盤、卡固機構等。如第10圖所示,當傳送裝置30將晶圓2固定於其上之後,機械手臂40之該對夾持臂451能相對彼此移動以改變夾持臂451之間的距離,進而釋放對晶圓的夾持固定。具體來說,此處所述的該對夾持臂451的相對移動意旨該對夾持臂451朝遠離彼此的方向移動以增加兩者之間的距離(該距離大於晶圓2之直徑),則機械手臂40會釋放對晶圓的夾持固定。可以理解的是,當該對夾持臂451進行晶圓2的夾持時,該對夾持臂451先朝遠離彼此的方向移動以增加兩者之間的距離(該距離大於晶圓2之直徑),接著朝靠近彼此的方向移動以減少兩者之間的距離(該距離約等於晶圓2之直徑)進而將晶圓2夾持在兩者之間。接著,傳送裝置30之伸縮臂31朝遠離機械手臂40的方向移動,並且傳送裝置30將晶圓2傳送至下游。具體來說,如第1圖所示,傳送裝置30與機械手臂40相鄰且設置在浸泡槽50與單晶圓處理設備60之間。傳送裝置30配置為用於將浸泡過製程液體3之晶圓2移送至下游的單晶圓處理設備60。Please refer to Figures 9 and 10. Figure 9 shows the second corresponding action diagram of the
如第1圖所示,單晶圓處理設備60設置在浸泡槽50之下游,用於承載浸泡過製程液體3之晶圓2,並且施加清洗液體至晶圓2之板面。在本實施例中,單晶圓處理設備60包含第一旋轉蝕刻台610、第二旋轉蝕刻台620、和旋轉清洗台630。第二旋轉蝕刻台620設置在第一旋轉蝕刻台610的下游,且旋轉清洗台630設置在第二旋轉蝕刻台620的下游,故晶圓2會依序被放置在第一旋轉蝕刻台610、第二旋轉蝕刻台620、和旋轉清洗台630。當晶圓2放置在第一旋轉蝕刻台610和第二旋轉蝕刻台620時,晶圓2會被分別施加不同的化學液體至晶圓2之板面以去除附著在晶圓2上之殘留物。並且,當晶圓2放置在旋轉清洗台630時,晶圓2會被施加去離子水至晶圓2之板面以去除附著在晶圓2上之化學液體。舉例來說,請參照第11圖,其顯示第1圖之晶圓濕處理工作站1之旋轉台之工作示意圖。第11圖中的旋轉台可為第一旋轉蝕刻台610、第二旋轉蝕刻台620、或旋轉清洗台630的其中一部份。旋轉台包含旋轉座601、承載台602、和液體供應裝置603。晶圓2放置在承載台602上。旋轉座601可繞軸轉動以帶動放置於其上的晶圓2旋轉。液體供應裝置603可提供一對應的液體(如化學液體或去離子水)至晶圓2的表面。因此,晶圓2通過在晶圓濕處理工作站1執行上述一系列的清洗流程進而能實現具有晶片微小化和高密度導線佈局之晶圓的清洗。As shown in FIG. 1, the single
綜上所述,本揭示的晶圓濕處理工作站可用於對晶圓執行化學浸泡、化學液噴洗、以及去離子水(DI Water)清洗乾燥等一系列清洗製程,以實現具有晶片微小化和高密度導線佈局的晶圓的清洗。並且,本揭示的晶圓濕處理工作站以垂直式浸泡槽取代水平式浸泡槽。藉此設計,晶圓採垂直方向立於浸泡槽中,促使上下循環流動之製程液體能充分接觸各晶圓之表面,如此可防止使用水平浸泡槽因晶圓採水平放置而阻礙藥液流動與氣泡排放,進而導致循環流場不良與雜質回沾等問題。另一方面,本揭示藉由提供垂直式浸泡槽和與浸泡槽相關聯的機械手臂,並將浸泡槽、機械手臂、和晶圓濕處理工作站的控制器連結,如此可精確地控制晶圓的浸泡時間。例如,先進行浸泡之晶圓,在到達預定之浸泡時間時,控制器就可命令機械手臂先行將此晶圓由垂直浸泡槽中取出,如此即可實現精確地控制各個晶圓於化學浸泡槽之浸泡時間。In summary, the wafer wet processing workstation of the present disclosure can be used to perform a series of cleaning processes such as chemical soaking, chemical liquid spraying, and DI Water cleaning and drying on the wafers, so as to realize the miniaturization and miniaturization of wafers. Cleaning of wafers with high-density wire layout. In addition, the wafer wet processing workstation of the present disclosure replaces the horizontal immersion tank with a vertical immersion tank. With this design, the wafers are placed in the immersion tank in the vertical direction, so that the process liquid circulating up and down can fully contact the surface of each wafer. This prevents the use of a horizontal immersion tank from obstructing the flow of the chemical liquid due to the horizontal placement of the wafer. Air bubbles are discharged, which in turn leads to problems such as poor circulating flow field and impurities back-wetting. On the other hand, the present disclosure provides a vertical immersion tank and a robot arm associated with the immersion tank, and connects the immersion tank, the robot arm, and the controller of the wafer wet processing station, so that the wafer can be precisely controlled. Soaking time. For example, for a wafer that is immersed first, when the predetermined immersion time is reached, the controller can instruct the robotic arm to first remove the wafer from the vertical immersion tank, so that precise control of each wafer in the chemical immersion tank can be achieved The soaking time.
以上僅是本揭示的較佳實施方式,應當指出,對於所屬領域技術人員,在不脫離本揭示原理的前提下,還可以做出若干改進和潤飾,這些改進和潤飾也應視爲本揭示的保護範圍。The above are only the preferred embodiments of the present disclosure. It should be pointed out that for those skilled in the art, without departing from the principles of the present disclosure, several improvements and modifications can be made, and these improvements and modifications should also be regarded as the present disclosure. protected range.
1:晶圓濕處理工作站 10:入料口 30:傳送裝置 31:伸縮臂 40:機械手臂 41:基座 42:升降部 43:伸縮部 431:第一段 432:第二段 44:翻轉部 45:保持部 451:夾持臂 452:夾爪 453:凹槽 46:翻轉動作 50:浸泡槽 51:附加組件 60:單晶圓處理設備 610:第一旋轉蝕刻台 620:第二旋轉蝕刻台 630:旋轉清洗台 601:旋轉座 602:承載台 603:液體供應裝置 70:出料口 90:卡匣 91:卡槽 92:橫桿 2:晶圓 3:製程液體 X、Y、Z:方向1: Wafer wet processing workstation 10: Inlet 30: Conveyor 31: Telescopic boom 40: mechanical arm 41: Pedestal 42: Lifting part 43: Telescopic part 431: first paragraph 432: second paragraph 44: Flip part 45: holding part 451: Clamping arm 452: Gripper 453: groove 46: flip action 50: Soaking tank 51: additional components 60: Single wafer processing equipment 610: The first rotary etching table 620: The second rotary etching table 630: Rotary cleaning table 601: Rotating seat 602: Carrier 603: Liquid Supply Device 70: Outlet 90: cassette 91: card slot 92: Crossbar 2: Wafer 3: Process liquid X, Y, Z: direction
第1圖顯示本揭示之較佳實施例之晶圓濕處理工作站之示意圖; 第2圖顯示第1圖之晶圓濕處理工作站之機械手臂之第一動作示意圖; 第3圖顯示第1圖之晶圓濕處理工作站之機械手臂之第二動作示意圖; 第4圖顯示第3圖之晶圓濕處理工作站之立體示意圖; 第5圖顯示第4圖之晶圓濕處理工作站之局部剖面圖; 第6圖顯示機械手臂之夾爪之側視圖; 第7圖顯示第1圖之晶圓濕處理工作站之機械手臂之第三動作示意圖; 第8圖顯示第1圖之晶圓濕處理工作站之機械手臂與傳送裝置之第一對應動作示意圖; 第9圖顯示第1圖之晶圓濕處理工作站之機械手臂與傳送裝置之第二對應動作示意圖; 第10圖顯示第1圖之晶圓濕處理工作站之機械手臂與傳送裝置之第二對應動作示意圖;以及 第11圖顯示第1圖之晶圓濕處理工作站之旋轉台之工作示意圖。 Figure 1 shows a schematic diagram of a wafer wet processing workstation according to a preferred embodiment of the present disclosure; Figure 2 shows a schematic diagram of the first action of the robotic arm of the wafer wet processing workstation in Figure 1; Figure 3 shows a schematic diagram of the second action of the robotic arm of the wafer wet processing workstation in Figure 1; Figure 4 shows a three-dimensional schematic diagram of the wafer wet processing workstation shown in Figure 3; Figure 5 shows a partial cross-sectional view of the wafer wet processing workstation in Figure 4; Figure 6 shows the side view of the gripper of the robotic arm; Figure 7 shows a schematic diagram of the third action of the robotic arm of the wafer wet processing workstation in Figure 1; Figure 8 shows a schematic diagram of the first corresponding action of the robotic arm and the transfer device of the wafer wet processing workstation in Figure 1; Figure 9 shows a schematic diagram of the second corresponding action of the robotic arm and the transfer device of the wafer wet processing workstation in Figure 1; Figure 10 shows a schematic diagram of the second corresponding action of the robotic arm and the transfer device of the wafer wet processing workstation in Figure 1; and Figure 11 shows the working schematic diagram of the rotating table of the wafer wet processing workstation in Figure 1.
1:晶圓濕處理工作站 1: Wafer wet processing workstation
10:入料口 10: Inlet
30:傳送裝置 30: Conveyor
40:機械手臂 40: mechanical arm
50:浸泡槽 50: Soaking tank
60:單晶圓處理設備 60: Single wafer processing equipment
610:第一旋轉蝕刻台 610: The first rotary etching table
620:第二旋轉蝕刻台 620: The second rotary etching table
630:旋轉清洗台 630: Rotary cleaning table
70:出料口 70: Outlet
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| TW202119491A (en) | 2021-05-16 |
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