TWI700762B - Wafer Tungsten Film Heater - Google Patents
Wafer Tungsten Film Heater Download PDFInfo
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- TWI700762B TWI700762B TW108112827A TW108112827A TWI700762B TW I700762 B TWI700762 B TW I700762B TW 108112827 A TW108112827 A TW 108112827A TW 108112827 A TW108112827 A TW 108112827A TW I700762 B TWI700762 B TW I700762B
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 32
- 239000010937 tungsten Substances 0.000 title claims abstract description 32
- 238000010438 heat treatment Methods 0.000 claims abstract description 153
- 238000000605 extraction Methods 0.000 claims abstract description 7
- 238000007664 blowing Methods 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 238000001179 sorption measurement Methods 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 60
- 238000005137 deposition process Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
本創作係一種晶圓鍍鎢膜加熱器,其包含一加熱盤、一真空裝置及一加熱裝置;加熱盤中心處具抽氣孔,加熱盤的頂面形成有一內環槽、一外環槽、複數內徑向槽及複數外徑向槽,內環槽環繞抽氣孔,外環槽環繞內環槽,外徑向槽的兩端連通內環槽及外環槽,且外徑向槽弧形地延伸;藉此,外徑向槽因弧形延伸而使的外徑向槽的總長度較長,外徑向槽兩側延伸形成的有效排氣區域因此能夠完整覆蓋內環槽與外環槽之間的面積,從而使得外加熱塊與晶圓間的氣體可迅速移動進入外徑向槽內而被排出,藉此加快晶圓吸附於加熱平面的速度,以提高產量。This creation is a wafer-plated tungsten film heater, which includes a heating plate, a vacuum device and a heating device; the center of the heating plate has a suction hole, and the top surface of the heating plate is formed with an inner ring groove, an outer ring groove, Plural inner radial grooves and plural outer radial grooves, the inner ring groove surrounds the air extraction hole, the outer ring groove surrounds the inner ring groove, both ends of the outer radial groove connect the inner ring groove and the outer ring groove, and the outer radial groove is arc-shaped In this way, the total length of the outer radial groove is longer due to the arc-shaped extension of the outer radial groove, and the effective exhaust area formed on both sides of the outer radial groove can therefore completely cover the inner ring groove and the outer ring The area between the grooves allows the gas between the outer heating block and the wafer to quickly move into the outer radial groove and be discharged, thereby speeding up the adsorption of the wafer on the heating plane to increase the yield.
Description
本發明係一種在金屬鎢化學氣相沉積製程中,用於加熱基材的加熱器,尤指一種在半導體晶圓的鎢沉積製程中,用於加熱晶圓的晶圓鍍鎢膜加熱器。 The present invention is a heater for heating a substrate in a metal tungsten chemical vapor deposition process, and particularly refers to a wafer tungsten film heater for heating a wafer in a tungsten deposition process of a semiconductor wafer.
在半導體製程中,具有一鎢沉積製程,鎢沉積製程是以化學氣相沉積的方式,將鎢沉積於晶圓表面上,以形成晶片上的接點或通道等導電結構。 In the semiconductor manufacturing process, there is a tungsten deposition process. The tungsten deposition process is to deposit tungsten on the surface of the wafer by chemical vapor deposition to form conductive structures such as contacts or channels on the wafer.
鎢沉積製程在一反應室中進行,反應室中具有一加熱器,加熱器整體為一金屬座體,加熱器的頂面突出有多個陶瓷彈性凸點,加熱器中央凹設有真空吸附裝置;進行鎢沉積製程時,將晶圓放置於加熱器上,同時以前驅氣體充滿反應室,加熱器先以隔熱效果良好的陶瓷彈性凸點支撐晶圓,使加熱器能夠與隔著薄層空氣對晶圓進行預熱;預熱完成後,加熱器啟動中央的真空吸附裝置,將晶圓吸附貼靠於加熱器的表面,繼續將晶圓加熱至處理溫度,使晶圓表面與前驅氣體作用,在晶圓上沉積形成鎢薄膜。 The tungsten deposition process is carried out in a reaction chamber. There is a heater in the reaction chamber. The heater is a metal base. The top surface of the heater is protruded with a number of ceramic elastic bumps. The center of the heater is recessed with a vacuum adsorption device ; During the tungsten deposition process, the wafer is placed on the heater, while the precursor gas is filled with the reaction chamber, the heater first supports the wafer with ceramic elastic bumps with good heat insulation effect, so that the heater can be separated from the thin layer Air preheats the wafer; after the preheating is completed, the heater activates the central vacuum adsorption device to adsorb the wafer against the surface of the heater, and continue to heat the wafer to the processing temperature, so that the wafer surface and the precursor gas Function to deposit a thin film of tungsten on the wafer.
現有的加熱器如圖6所示,加熱器的頂面為一圓型的加熱平面91,加熱平面91中央處凹設有抽氣孔92,並且加熱平面91凹設有與抽氣孔92相連通的複數內徑向槽93、一內環槽94及複數外徑向槽95,藉由設置前述各凹槽以確保真空裝置所產生的負壓吸附力能均勻分佈於晶圓的平面上;在真空裝置啟動後,晶圓與加熱器頂面之間的氣體經由抽氣孔92向下抽出,使晶圓底面的
氣壓小於晶圓頂面的氣壓,進而使晶圓的底面朝貼靠於加熱平面91的方向移動;當晶圓的底面朝貼靠於加熱平面91的方向移動時,晶圓與加熱平面91之間的氣體的是沿加熱平面91的平面,從加熱平面91的周緣處朝抽氣孔92移動,具體來說,大部分的氣體會先匯集至外徑向槽95,然後再經由內徑向槽93流動到抽氣孔92,再被真空裝置抽出,因此可想像外徑向槽95會在凹槽的兩側延伸形成一個長條狀的有效排氣區域,在有效排氣區域中的氣體因距離凹槽很近,因此氣體可迅速匯集至外徑向槽95內而被排出;然而,因外徑向槽95是一直線地從加熱平面91的中心朝加熱平面91的周緣放射狀的延伸,造成外徑向槽95的間隔距離隨著外徑向槽95遠離加熱平面91的中心不斷增加,因而使得外加熱塊911的中央與外徑向槽95的距離在遠離加熱平面91的中心處變得過大而無法被外徑向槽95等凹槽所形成的有效排氣區域覆蓋,因而使晶圓向下移動時,外加熱塊911與晶圓之間的氣體無法迅速地透過外徑向槽95等凹槽排出,晶圓也因此無法確實貼靠於加熱平面91;造成現有的加熱器在啟動真空吸附裝置後,需費時等待晶圓吸附貼靠於加熱平面91,因而影響生產速度。
The existing heater is shown in Fig. 6, the top surface of the heater is a
因此,現有技術的晶圓鍍鎢膜加熱器實有待加以改良。 Therefore, the prior art wafer tungsten film heaters really need to be improved.
有鑑於前述之現有技術的缺點及不足,本發明提供一種晶圓鍍鎢膜加熱器以減少晶圓吸附貼靠於加熱平面所需的時間。 In view of the aforementioned shortcomings and deficiencies of the prior art, the present invention provides a wafer tungsten film heater to reduce the time required for the wafer to adhere to the heating plane.
為達到上述的創作目的,本發明所採用的技術手段為設計一種晶圓鍍鎢膜加熱,其中包含:一加熱盤,其具有: 一加熱平面,其位於該加熱盤的頂面;一抽氣孔,其貫穿該加熱盤的該加熱平面及底面;一內環槽,其凹設於該加熱平面上,且環繞該加熱平面的中心及該抽氣孔;一外環槽,其凹設於該加熱平面上,且環繞該加熱平面的中心及該內環槽;複數內徑向槽,其凹設於該加熱平面上,且環繞該加熱平面的中心間隔設置;該等內徑向槽的一端連通該抽氣孔,另一端連通該內環槽;複數外徑向槽,其凹設於該加熱平面上,且環繞該加熱平面的中心間隔設置;該等外徑向槽的一端連通該內環槽,另一端連通該外環槽,且該等外徑向槽弧形地延伸;複數彈片凹槽,該等彈片凹槽環繞該加熱平面間隔設置,該等該彈片凹槽位於該內環槽的外側,且各該彈片凹槽連通其中至少二該外徑向槽;一真空裝置,該真空裝置連通該加熱盤的該抽氣孔;一加熱裝置,其連接該加熱盤。 In order to achieve the above creative purpose, the technical means adopted by the present invention is to design a wafer heating with tungsten coating, which includes: a heating plate, which has: A heating plane, which is located on the top surface of the heating plate; an air extraction hole, which penetrates the heating plane and the bottom surface of the heating plate; an inner ring groove, which is recessed on the heating plane and surrounds the center of the heating plane And the air extraction hole; an outer ring groove, which is recessed on the heating plane, and surrounds the center of the heating plane and the inner ring groove; a plurality of inner radial grooves, which are recessed on the heating plane, and surround the The center of the heating plane is arranged at intervals; one end of the inner radial grooves communicates with the air extraction hole, and the other end communicates with the inner ring groove; a plurality of outer radial grooves are recessed on the heating plane and surround the center of the heating plane Are arranged at intervals; one end of the outer radial grooves communicates with the inner ring groove, the other end communicates with the outer ring groove, and the outer radial grooves extend in an arc shape; a plurality of elastic sheet grooves, the elastic sheet grooves surround the heating Are arranged at intervals on a plane, the elastic sheet grooves are located outside the inner ring groove, and each of the elastic sheet grooves communicates with at least two of the outer radial grooves; a vacuum device connected to the air suction hole of the heating plate; A heating device connected to the heating plate.
本發明的優點在於,藉由使外徑向槽弧形地朝加熱平面的周緣延伸,外徑向槽因弧形延伸而使得外徑向槽的總長度相較於現有技術的直線延伸的外徑向槽來的更長,因此本創作的外徑向槽兩側延伸形成的有效排氣區域因此能夠完整覆蓋外加熱塊的全部面積,從而使得外加熱塊與晶圓間的氣體可迅速沿加熱平面移動進入外徑向槽內而被排出,藉此縮短啟動真空吸附裝置後,晶圓吸附貼靠於加熱平面的速度,加快生產速度。 The advantage of the present invention is that, by making the outer radial groove arc-shaped to extend toward the periphery of the heating plane, the outer radial groove extends in an arc so that the total length of the outer radial groove is compared with that of the prior art linear extension. The radial groove is longer. Therefore, the effective exhaust area formed on both sides of the outer radial groove can completely cover the entire area of the outer heating block, so that the gas between the outer heating block and the wafer can quickly flow along The heating plane moves into the outer radial groove and is discharged, thereby shortening the speed at which the wafer is adsorbed against the heating plane after the vacuum suction device is activated, and the production speed is accelerated.
進一步而言,所述之晶圓鍍鎢膜加熱器,其中該等外徑向槽的數量大於該等內徑向槽的數量。 Furthermore, in the wafer heater with tungsten coating, the number of the outer radial grooves is greater than the number of the inner radial grooves.
進一步而言,所述之晶圓鍍鎢膜加熱器,其中該等外徑向槽的數量為該等內徑向槽的數量的兩倍。 Furthermore, in the wafer heater with tungsten coating, the number of the outer radial grooves is twice the number of the inner radial grooves.
進一步而言,所述之晶圓鍍鎢膜加熱器,其中該外環槽相鄰該加熱平面的周緣。 Furthermore, in the wafer tungsten coating heater, the outer ring groove is adjacent to the periphery of the heating plane.
進一步而言,所述之晶圓鍍鎢膜加熱器,其中該加熱盤進一步具有:一吹氣環槽,其凹設於該加熱盤的頂面,且位於該加熱平面的外側;複數吹氣通道,其凹設於該加熱盤的底面,且環繞該加熱盤的中心間隔設置,各該吹氣通道與該吹氣環槽相連通。 Furthermore, in the wafer tungsten coating heater, the heating plate further has: a blowing ring groove, which is recessed on the top surface of the heating plate and located outside the heating plane; The channels are recessed on the bottom surface of the heating plate and are arranged at intervals around the center of the heating plate, and each of the blowing channels is communicated with the blowing ring groove.
進一步而言,所述之晶圓鍍鎢膜加熱器,其中該加熱盤進一步具有一中環槽,其凹設於該加熱平面上,且環繞該加熱平面的中心及該內環槽;該外環槽環繞該中環槽。 Furthermore, in the wafer tungsten coating heater, the heating plate further has a middle ring groove, which is recessed on the heating plane and surrounds the center of the heating plane and the inner ring groove; the outer ring The groove surrounds the middle ring groove.
進一步而言,所述之晶圓鍍鎢膜加熱器,其中該晶圓鍍鎢膜加熱器進一步包含複數彈片,該等彈片分別設於該加熱盤的該複數彈片凹槽中,各該彈片的一側面突出有一凸點,各該彈片的該凸點選擇性地向上突出該加熱平面。 Further, in the wafer tungsten film heater, the wafer tungsten film heater further includes a plurality of elastic pieces, the elastic pieces are respectively arranged in the plurality of elastic piece grooves of the heating plate, and the A convex point protrudes from one side surface, and the convex point of each elastic piece selectively protrudes upward from the heating plane.
10:加熱盤 10: Heating plate
11:加熱平面 11: Heating plane
111:內加熱塊 111: inner heating block
112:外加熱塊 112: External heating block
12:抽氣孔 12: Exhaust hole
13:內環槽 13: inner ring groove
14:中環槽 14: Central groove
15:外環槽 15: Outer ring groove
16:吹氣環槽 16: Blow ring groove
161:吹氣通道 161: Blow Channel
17:內徑向槽 17: Inner radial groove
18:外徑向槽 18: Outer radial groove
19:彈片凹槽 19: Shrapnel groove
20:彈片 20: shrapnel
21:凸點 21: bump
A:晶圓 A: Wafer
91:加熱平面 91: heating plane
911:外加熱塊 911: External heating block
92:抽氣孔 92: Vent
93:內徑向槽 93: inner radial groove
94:內環槽 94: inner ring groove
95:外徑向槽 95: Outer radial groove
圖1為本發明的立體外觀圖。 Figure 1 is a perspective view of the present invention.
圖2為本發明的元件分解圖。 Figure 2 is an exploded view of the components of the present invention.
圖3為本發明的剖視示意圖。 Figure 3 is a schematic cross-sectional view of the present invention.
圖4為本發明的上視圖。 Figure 4 is a top view of the present invention.
圖5為本發明的另一剖視示意圖。 Figure 5 is another schematic cross-sectional view of the present invention.
圖6為現有技術的晶圓鍍鎢膜加熱器的上視圖。 Fig. 6 is a top view of a prior art wafer tungsten film heater.
以下配合圖式及本發明之較佳實施例,進一步闡述本發明為達成預定創作目的所採取的技術手段。 In the following, in conjunction with the drawings and the preferred embodiments of the present invention, the technical means adopted by the present invention to achieve the predetermined creative purpose are further described.
請參閱圖1至圖3所示,本發明之晶圓鍍鎢膜加熱器包含一加熱盤10、複數彈片20、一真空裝置(圖中未示)及一加熱裝置(圖中未示),本發明用以對一晶圓A進行加熱;彈片20設於加熱盤10的頂面,晶圓A透過彈片20的抵靠與加熱盤10的頂面間隔設置,真空裝置連接至加熱盤10;當真空裝置啟動後,晶圓A與加熱盤10間的氣體被真空裝置抽出,使晶圓A因兩側面的壓力差而吸附貼靠於加熱盤10的頂面。
Please refer to FIGS. 1 to 3, the wafer tungsten coating heater of the present invention includes a
請參閱圖1、圖3及圖4所示,前述之加熱盤10具有一加熱平面11、一抽氣孔12、一內環槽13、一外環槽15、複數內徑向槽17、複數外徑向槽18及複數彈片凹槽19,且在本實施例中,加熱盤10進一步包含一中環槽14、一吹氣環槽16及一吹氣通道161;前述之加熱平面11位於加熱盤10的頂面,在本實施例中,加熱平面11的形狀為圓形,且加熱平面11的直徑與晶圓A的直徑大致相同,但加熱平面11的形狀也可以是方形等其他形狀,僅要能均勻加熱晶圓A即可;抽氣孔12貫穿加熱盤10的加熱平面11及底面,在本實施例中,抽氣孔12在加熱平面11上環繞加熱平面11的中心形成有多個抽氣開口,但不以此為限;前述之內環槽13、中環槽14及外環槽15凹設於加熱平面11上,且環繞加熱平面11的中心及抽氣孔12,中環槽14環繞內環槽13,外環槽15環繞中環槽14及內環槽13;在本實施例中,外環槽15相鄰加熱平面11的周緣;內徑向槽17凹設於加熱平面11上,且環繞加熱平面11的中心間隔設置,內徑向槽17的一端連通抽氣孔12,且具體來說,各內徑向槽17的一端分別透過各抽氣開口連通抽氣孔12;內徑向槽17相對抽氣孔12的另一端連通內環槽13,內徑向槽17
將位於內環槽13內的加熱平面11分割為多個面積大致相等的內加熱塊111;外徑向槽18凹設於加熱平面11上,且環繞加熱平面11的中心間隔設置;外徑向槽18的一端連通內環槽13,另一端連通外環槽15,且外徑向槽18弧形地延伸,外徑向槽18將位於內環槽13與外環槽15之間的加熱平面11分割為多個外加熱塊112,藉由使外徑向槽18弧形延伸而使外徑向槽18的總長度較長,且外徑向槽18兩側距離凹槽很近而能夠迅速排氣的有效排氣區域因此能夠完整覆蓋外加熱塊112的全部面積,因此外加熱塊112與晶圓A之間的氣體能夠迅速移動進入外徑向槽18內而被排出,減少晶圓A吸附貼靠於加熱平面11所需的時間;在本實施例中,外徑向槽18的數量為內徑向槽17的兩倍,且每一個內徑向槽17皆有兩個外徑向槽18相對應,即在內環槽13與內徑向槽17連接處沿內環槽13延伸方向的相對兩側皆為一個外徑向槽18,藉此將較接近抽氣孔12的內徑向槽17的抽氣氣流均勻分配給兩個外徑向槽18,使負壓吸附的力量能均勻分佈於整個晶圓A的平面上,同時也藉由在距離加熱平面11的中心較遠的內環槽13與外環槽15之間較密集地設置外徑向槽18,使外加熱塊112的面積與內加熱塊111的寬度不會出現過於顯著的差異,當晶圓A向下移動貼靠加熱平面11時,外加熱塊112的頂面與晶圓A的底面間的氣體便能迅速透過外徑向槽18排出,但外徑向槽18的數量不以此為限,僅要外徑向槽18的數量大於內徑向槽17即可,甚至,外徑向槽18的數量也可以等於內徑向槽17的數量;請參閱圖3至圖5所示,前述之吹氣環槽16凹設於加熱盤10的頂面,且位於加熱平面11的外側;前述之複數吹氣通道161凹設於加熱盤10的底面,且環繞加熱盤10的中心間隔設置,該吹氣通道161與吹氣環槽16相連通;請參閱圖1至圖3所示,前述之彈片凹槽19環繞加熱平面11間隔設置,在本實施例中,彈片凹槽19位於內環槽13的外側,且各彈片凹槽19連通至少二個外徑向槽18,藉此使彈片凹槽19內的氣體能夠迅速透過外徑向槽18排
出,但不以此為限,也可以藉由使彈片凹槽19連通外環槽15或加熱平面11上與抽氣孔12連通其他凹槽以達到相同功效。
Please refer to Figure 1, Figure 3 and Figure 4, the
前述之彈片20設於彈片凹槽19中,各彈片20的一側面突出有一凸點21,各彈片20的凸點21可向上突出加熱平面11,以使晶圓A與加熱平面間11保持一層氣體間隔;前述之真空裝置連通加熱盤10的抽氣孔12,而當真空裝置透過抽氣孔12進行抽氣後,晶圓A吸附貼靠於加熱平面11,彈片20的凸點21則被晶圓A下壓至彈片凹槽19內。
The aforementioned
前述之加熱裝置連接加熱盤10,提供晶圓加熱的熱能來源。
The aforementioned heating device is connected to the
本創作於使用時,以機械手臂將一晶圓放置於加熱盤10的加熱平面11上方,晶圓A先透過彈片20的凸點21支撐而與加熱平面11保持一氣體間隔,進行晶圓A的預熱;晶圓A預熱至適當溫度後,啟動真空裝置將晶圓A吸附貼靠於加熱平面11上以進行鎢沉積製程。
When this creation is in use, a robotic arm is used to place a wafer above the
綜上所述,本發明藉由將複數外徑向槽設計成弧形以減少晶圓吸附貼靠於加熱平面所需的時間。 In summary, the present invention reduces the time required for the wafer to attach to the heating plane by designing a plurality of outer radial grooves in an arc shape.
以上所述僅是本發明的較佳實施例而已,並非對本發明做任何形式上的限制,雖然本發明已以較佳實施例揭露如上,然而並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明技術方案的範圍內,當可利用上述揭示的技術內容作出些許更動或修飾為等同變化的等效實施例,但凡是未脫離本發明技術方案的內容,依據本發明的技術實質對以上實施例所作的任何簡單修改、等同變化與修飾,均仍屬於本發明技術方案的範圍內。 The above are only the preferred embodiments of the present invention, and do not limit the present invention in any form. Although the present invention has been disclosed in the preferred embodiments as above, it is not intended to limit the present invention. Any technical field has Generally knowledgeable persons, without departing from the scope of the technical solution of the present invention, can use the technical content disclosed above to make slight changes or modifications into equivalent embodiments with equivalent changes. However, any content that does not depart from the technical solution of the present invention is based on this The technical essence of the invention makes any simple modifications, equivalent changes and modifications to the above embodiments still fall within the scope of the technical solutions of the present invention.
10:加熱盤 10: Heating plate
11:加熱平面 11: Heating plane
111:內加熱塊 111: inner heating block
112:外加熱塊 112: External heating block
13:內環槽 13: inner ring groove
14:中環槽 14: Central groove
15:外環槽 15: Outer ring groove
16:吹氣環槽 16: Blow ring groove
17:內徑向槽 17: Inner radial groove
18:外徑向槽 18: Outer radial groove
19:彈片凹槽 19: Shrapnel groove
20:彈片 20: shrapnel
21:凸點 21: bump
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW108112827A TWI700762B (en) | 2019-04-12 | 2019-04-12 | Wafer Tungsten Film Heater |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW108112827A TWI700762B (en) | 2019-04-12 | 2019-04-12 | Wafer Tungsten Film Heater |
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| Publication Number | Publication Date |
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| TWI700762B true TWI700762B (en) | 2020-08-01 |
| TW202038357A TW202038357A (en) | 2020-10-16 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050022742A1 (en) * | 2003-07-29 | 2005-02-03 | Hong Hyung-Sik | Chemical vapor deposition processing equipment for use in fabricating a semiconductor device |
| US20060000822A1 (en) * | 2004-02-23 | 2006-01-05 | Kyocera Corporation | Ceramic heater, wafer heating device using thereof and method for manufacturing a semiconductor substrate |
| JP2006127883A (en) * | 2004-10-28 | 2006-05-18 | Kyocera Corp | Heater and wafer heating device |
| JP2007066542A (en) * | 2005-08-29 | 2007-03-15 | Kyocera Corp | Heater, wafer heating apparatus, and method for manufacturing the heater |
| US20080006618A1 (en) * | 2006-07-07 | 2008-01-10 | Nhk Spring Co., Ltd. | Heater unit |
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2019
- 2019-04-12 TW TW108112827A patent/TWI700762B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050022742A1 (en) * | 2003-07-29 | 2005-02-03 | Hong Hyung-Sik | Chemical vapor deposition processing equipment for use in fabricating a semiconductor device |
| US20060000822A1 (en) * | 2004-02-23 | 2006-01-05 | Kyocera Corporation | Ceramic heater, wafer heating device using thereof and method for manufacturing a semiconductor substrate |
| JP2006127883A (en) * | 2004-10-28 | 2006-05-18 | Kyocera Corp | Heater and wafer heating device |
| JP2007066542A (en) * | 2005-08-29 | 2007-03-15 | Kyocera Corp | Heater, wafer heating apparatus, and method for manufacturing the heater |
| US20080006618A1 (en) * | 2006-07-07 | 2008-01-10 | Nhk Spring Co., Ltd. | Heater unit |
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