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TWI700762B - Wafer Tungsten Film Heater - Google Patents

Wafer Tungsten Film Heater Download PDF

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Publication number
TWI700762B
TWI700762B TW108112827A TW108112827A TWI700762B TW I700762 B TWI700762 B TW I700762B TW 108112827 A TW108112827 A TW 108112827A TW 108112827 A TW108112827 A TW 108112827A TW I700762 B TWI700762 B TW I700762B
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heating
ring groove
groove
wafer
plane
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TW108112827A
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Chinese (zh)
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TW202038357A (en
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陳登葵
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微芯科技有限公司
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Abstract

本創作係一種晶圓鍍鎢膜加熱器,其包含一加熱盤、一真空裝置及一加熱裝置;加熱盤中心處具抽氣孔,加熱盤的頂面形成有一內環槽、一外環槽、複數內徑向槽及複數外徑向槽,內環槽環繞抽氣孔,外環槽環繞內環槽,外徑向槽的兩端連通內環槽及外環槽,且外徑向槽弧形地延伸;藉此,外徑向槽因弧形延伸而使的外徑向槽的總長度較長,外徑向槽兩側延伸形成的有效排氣區域因此能夠完整覆蓋內環槽與外環槽之間的面積,從而使得外加熱塊與晶圓間的氣體可迅速移動進入外徑向槽內而被排出,藉此加快晶圓吸附於加熱平面的速度,以提高產量。This creation is a wafer-plated tungsten film heater, which includes a heating plate, a vacuum device and a heating device; the center of the heating plate has a suction hole, and the top surface of the heating plate is formed with an inner ring groove, an outer ring groove, Plural inner radial grooves and plural outer radial grooves, the inner ring groove surrounds the air extraction hole, the outer ring groove surrounds the inner ring groove, both ends of the outer radial groove connect the inner ring groove and the outer ring groove, and the outer radial groove is arc-shaped In this way, the total length of the outer radial groove is longer due to the arc-shaped extension of the outer radial groove, and the effective exhaust area formed on both sides of the outer radial groove can therefore completely cover the inner ring groove and the outer ring The area between the grooves allows the gas between the outer heating block and the wafer to quickly move into the outer radial groove and be discharged, thereby speeding up the adsorption of the wafer on the heating plane to increase the yield.

Description

晶圓鍍鎢膜加熱器Wafer Tungsten Film Heater

本發明係一種在金屬鎢化學氣相沉積製程中,用於加熱基材的加熱器,尤指一種在半導體晶圓的鎢沉積製程中,用於加熱晶圓的晶圓鍍鎢膜加熱器。 The present invention is a heater for heating a substrate in a metal tungsten chemical vapor deposition process, and particularly refers to a wafer tungsten film heater for heating a wafer in a tungsten deposition process of a semiconductor wafer.

在半導體製程中,具有一鎢沉積製程,鎢沉積製程是以化學氣相沉積的方式,將鎢沉積於晶圓表面上,以形成晶片上的接點或通道等導電結構。 In the semiconductor manufacturing process, there is a tungsten deposition process. The tungsten deposition process is to deposit tungsten on the surface of the wafer by chemical vapor deposition to form conductive structures such as contacts or channels on the wafer.

鎢沉積製程在一反應室中進行,反應室中具有一加熱器,加熱器整體為一金屬座體,加熱器的頂面突出有多個陶瓷彈性凸點,加熱器中央凹設有真空吸附裝置;進行鎢沉積製程時,將晶圓放置於加熱器上,同時以前驅氣體充滿反應室,加熱器先以隔熱效果良好的陶瓷彈性凸點支撐晶圓,使加熱器能夠與隔著薄層空氣對晶圓進行預熱;預熱完成後,加熱器啟動中央的真空吸附裝置,將晶圓吸附貼靠於加熱器的表面,繼續將晶圓加熱至處理溫度,使晶圓表面與前驅氣體作用,在晶圓上沉積形成鎢薄膜。 The tungsten deposition process is carried out in a reaction chamber. There is a heater in the reaction chamber. The heater is a metal base. The top surface of the heater is protruded with a number of ceramic elastic bumps. The center of the heater is recessed with a vacuum adsorption device ; During the tungsten deposition process, the wafer is placed on the heater, while the precursor gas is filled with the reaction chamber, the heater first supports the wafer with ceramic elastic bumps with good heat insulation effect, so that the heater can be separated from the thin layer Air preheats the wafer; after the preheating is completed, the heater activates the central vacuum adsorption device to adsorb the wafer against the surface of the heater, and continue to heat the wafer to the processing temperature, so that the wafer surface and the precursor gas Function to deposit a thin film of tungsten on the wafer.

現有的加熱器如圖6所示,加熱器的頂面為一圓型的加熱平面91,加熱平面91中央處凹設有抽氣孔92,並且加熱平面91凹設有與抽氣孔92相連通的複數內徑向槽93、一內環槽94及複數外徑向槽95,藉由設置前述各凹槽以確保真空裝置所產生的負壓吸附力能均勻分佈於晶圓的平面上;在真空裝置啟動後,晶圓與加熱器頂面之間的氣體經由抽氣孔92向下抽出,使晶圓底面的 氣壓小於晶圓頂面的氣壓,進而使晶圓的底面朝貼靠於加熱平面91的方向移動;當晶圓的底面朝貼靠於加熱平面91的方向移動時,晶圓與加熱平面91之間的氣體的是沿加熱平面91的平面,從加熱平面91的周緣處朝抽氣孔92移動,具體來說,大部分的氣體會先匯集至外徑向槽95,然後再經由內徑向槽93流動到抽氣孔92,再被真空裝置抽出,因此可想像外徑向槽95會在凹槽的兩側延伸形成一個長條狀的有效排氣區域,在有效排氣區域中的氣體因距離凹槽很近,因此氣體可迅速匯集至外徑向槽95內而被排出;然而,因外徑向槽95是一直線地從加熱平面91的中心朝加熱平面91的周緣放射狀的延伸,造成外徑向槽95的間隔距離隨著外徑向槽95遠離加熱平面91的中心不斷增加,因而使得外加熱塊911的中央與外徑向槽95的距離在遠離加熱平面91的中心處變得過大而無法被外徑向槽95等凹槽所形成的有效排氣區域覆蓋,因而使晶圓向下移動時,外加熱塊911與晶圓之間的氣體無法迅速地透過外徑向槽95等凹槽排出,晶圓也因此無法確實貼靠於加熱平面91;造成現有的加熱器在啟動真空吸附裝置後,需費時等待晶圓吸附貼靠於加熱平面91,因而影響生產速度。 The existing heater is shown in Fig. 6, the top surface of the heater is a circular heating plane 91, the heating plane 91 is recessed with an air extraction hole 92, and the heating plane 91 is recessed with a plurality of connected air extraction holes 92 The inner radial groove 93, an inner ring groove 94 and a plurality of outer radial grooves 95 are provided with the aforementioned grooves to ensure that the suction force generated by the vacuum device can be evenly distributed on the plane of the wafer; After startup, the gas between the wafer and the top surface of the heater is drawn down through the exhaust hole 92 to make the bottom surface of the wafer The air pressure is lower than the air pressure on the top surface of the wafer, so that the bottom surface of the wafer moves toward the direction of contacting the heating plane 91; when the bottom surface of the wafer moves toward the direction of contacting the heating plane 91, the gap between the wafer and the heating plane 91 The gas in the middle is along the plane of the heating plane 91, moving from the periphery of the heating plane 91 to the suction hole 92. Specifically, most of the gas will first collect in the outer radial groove 95, and then pass through the inner radial groove. 93 flows to the exhaust hole 92, and then is drawn out by the vacuum device. Therefore, it is conceivable that the outer radial groove 95 will extend on both sides of the groove to form a long effective exhaust area. The gas in the effective exhaust area depends on the distance The grooves are very close, so the gas can quickly collect into the outer radial groove 95 and be discharged; however, because the outer radial groove 95 extends radially from the center of the heating plane 91 to the periphery of the heating plane 91, The spacing distance of the outer radial grooves 95 increases as the outer radial grooves 95 move away from the center of the heating plane 91, so that the distance between the center of the outer heating block 911 and the outer radial groove 95 becomes farther from the center of the heating plane 91. It is too large to be covered by the effective exhaust area formed by the grooves such as the outer radial groove 95, so that when the wafer moves downward, the gas between the outer heating block 911 and the wafer cannot quickly pass through the outer radial groove 95 When the groove is discharged, the wafer cannot be reliably attached to the heating surface 91; it takes time for the existing heater to wait for the wafer to attach to the heating surface 91 after the vacuum suction device is activated, which affects the production speed.

因此,現有技術的晶圓鍍鎢膜加熱器實有待加以改良。 Therefore, the prior art wafer tungsten film heaters really need to be improved.

有鑑於前述之現有技術的缺點及不足,本發明提供一種晶圓鍍鎢膜加熱器以減少晶圓吸附貼靠於加熱平面所需的時間。 In view of the aforementioned shortcomings and deficiencies of the prior art, the present invention provides a wafer tungsten film heater to reduce the time required for the wafer to adhere to the heating plane.

為達到上述的創作目的,本發明所採用的技術手段為設計一種晶圓鍍鎢膜加熱,其中包含:一加熱盤,其具有: 一加熱平面,其位於該加熱盤的頂面;一抽氣孔,其貫穿該加熱盤的該加熱平面及底面;一內環槽,其凹設於該加熱平面上,且環繞該加熱平面的中心及該抽氣孔;一外環槽,其凹設於該加熱平面上,且環繞該加熱平面的中心及該內環槽;複數內徑向槽,其凹設於該加熱平面上,且環繞該加熱平面的中心間隔設置;該等內徑向槽的一端連通該抽氣孔,另一端連通該內環槽;複數外徑向槽,其凹設於該加熱平面上,且環繞該加熱平面的中心間隔設置;該等外徑向槽的一端連通該內環槽,另一端連通該外環槽,且該等外徑向槽弧形地延伸;複數彈片凹槽,該等彈片凹槽環繞該加熱平面間隔設置,該等該彈片凹槽位於該內環槽的外側,且各該彈片凹槽連通其中至少二該外徑向槽;一真空裝置,該真空裝置連通該加熱盤的該抽氣孔;一加熱裝置,其連接該加熱盤。 In order to achieve the above creative purpose, the technical means adopted by the present invention is to design a wafer heating with tungsten coating, which includes: a heating plate, which has: A heating plane, which is located on the top surface of the heating plate; an air extraction hole, which penetrates the heating plane and the bottom surface of the heating plate; an inner ring groove, which is recessed on the heating plane and surrounds the center of the heating plane And the air extraction hole; an outer ring groove, which is recessed on the heating plane, and surrounds the center of the heating plane and the inner ring groove; a plurality of inner radial grooves, which are recessed on the heating plane, and surround the The center of the heating plane is arranged at intervals; one end of the inner radial grooves communicates with the air extraction hole, and the other end communicates with the inner ring groove; a plurality of outer radial grooves are recessed on the heating plane and surround the center of the heating plane Are arranged at intervals; one end of the outer radial grooves communicates with the inner ring groove, the other end communicates with the outer ring groove, and the outer radial grooves extend in an arc shape; a plurality of elastic sheet grooves, the elastic sheet grooves surround the heating Are arranged at intervals on a plane, the elastic sheet grooves are located outside the inner ring groove, and each of the elastic sheet grooves communicates with at least two of the outer radial grooves; a vacuum device connected to the air suction hole of the heating plate; A heating device connected to the heating plate.

本發明的優點在於,藉由使外徑向槽弧形地朝加熱平面的周緣延伸,外徑向槽因弧形延伸而使得外徑向槽的總長度相較於現有技術的直線延伸的外徑向槽來的更長,因此本創作的外徑向槽兩側延伸形成的有效排氣區域因此能夠完整覆蓋外加熱塊的全部面積,從而使得外加熱塊與晶圓間的氣體可迅速沿加熱平面移動進入外徑向槽內而被排出,藉此縮短啟動真空吸附裝置後,晶圓吸附貼靠於加熱平面的速度,加快生產速度。 The advantage of the present invention is that, by making the outer radial groove arc-shaped to extend toward the periphery of the heating plane, the outer radial groove extends in an arc so that the total length of the outer radial groove is compared with that of the prior art linear extension. The radial groove is longer. Therefore, the effective exhaust area formed on both sides of the outer radial groove can completely cover the entire area of the outer heating block, so that the gas between the outer heating block and the wafer can quickly flow along The heating plane moves into the outer radial groove and is discharged, thereby shortening the speed at which the wafer is adsorbed against the heating plane after the vacuum suction device is activated, and the production speed is accelerated.

進一步而言,所述之晶圓鍍鎢膜加熱器,其中該等外徑向槽的數量大於該等內徑向槽的數量。 Furthermore, in the wafer heater with tungsten coating, the number of the outer radial grooves is greater than the number of the inner radial grooves.

進一步而言,所述之晶圓鍍鎢膜加熱器,其中該等外徑向槽的數量為該等內徑向槽的數量的兩倍。 Furthermore, in the wafer heater with tungsten coating, the number of the outer radial grooves is twice the number of the inner radial grooves.

進一步而言,所述之晶圓鍍鎢膜加熱器,其中該外環槽相鄰該加熱平面的周緣。 Furthermore, in the wafer tungsten coating heater, the outer ring groove is adjacent to the periphery of the heating plane.

進一步而言,所述之晶圓鍍鎢膜加熱器,其中該加熱盤進一步具有:一吹氣環槽,其凹設於該加熱盤的頂面,且位於該加熱平面的外側;複數吹氣通道,其凹設於該加熱盤的底面,且環繞該加熱盤的中心間隔設置,各該吹氣通道與該吹氣環槽相連通。 Furthermore, in the wafer tungsten coating heater, the heating plate further has: a blowing ring groove, which is recessed on the top surface of the heating plate and located outside the heating plane; The channels are recessed on the bottom surface of the heating plate and are arranged at intervals around the center of the heating plate, and each of the blowing channels is communicated with the blowing ring groove.

進一步而言,所述之晶圓鍍鎢膜加熱器,其中該加熱盤進一步具有一中環槽,其凹設於該加熱平面上,且環繞該加熱平面的中心及該內環槽;該外環槽環繞該中環槽。 Furthermore, in the wafer tungsten coating heater, the heating plate further has a middle ring groove, which is recessed on the heating plane and surrounds the center of the heating plane and the inner ring groove; the outer ring The groove surrounds the middle ring groove.

進一步而言,所述之晶圓鍍鎢膜加熱器,其中該晶圓鍍鎢膜加熱器進一步包含複數彈片,該等彈片分別設於該加熱盤的該複數彈片凹槽中,各該彈片的一側面突出有一凸點,各該彈片的該凸點選擇性地向上突出該加熱平面。 Further, in the wafer tungsten film heater, the wafer tungsten film heater further includes a plurality of elastic pieces, the elastic pieces are respectively arranged in the plurality of elastic piece grooves of the heating plate, and the A convex point protrudes from one side surface, and the convex point of each elastic piece selectively protrudes upward from the heating plane.

10:加熱盤 10: Heating plate

11:加熱平面 11: Heating plane

111:內加熱塊 111: inner heating block

112:外加熱塊 112: External heating block

12:抽氣孔 12: Exhaust hole

13:內環槽 13: inner ring groove

14:中環槽 14: Central groove

15:外環槽 15: Outer ring groove

16:吹氣環槽 16: Blow ring groove

161:吹氣通道 161: Blow Channel

17:內徑向槽 17: Inner radial groove

18:外徑向槽 18: Outer radial groove

19:彈片凹槽 19: Shrapnel groove

20:彈片 20: shrapnel

21:凸點 21: bump

A:晶圓 A: Wafer

91:加熱平面 91: heating plane

911:外加熱塊 911: External heating block

92:抽氣孔 92: Vent

93:內徑向槽 93: inner radial groove

94:內環槽 94: inner ring groove

95:外徑向槽 95: Outer radial groove

圖1為本發明的立體外觀圖。 Figure 1 is a perspective view of the present invention.

圖2為本發明的元件分解圖。 Figure 2 is an exploded view of the components of the present invention.

圖3為本發明的剖視示意圖。 Figure 3 is a schematic cross-sectional view of the present invention.

圖4為本發明的上視圖。 Figure 4 is a top view of the present invention.

圖5為本發明的另一剖視示意圖。 Figure 5 is another schematic cross-sectional view of the present invention.

圖6為現有技術的晶圓鍍鎢膜加熱器的上視圖。 Fig. 6 is a top view of a prior art wafer tungsten film heater.

以下配合圖式及本發明之較佳實施例,進一步闡述本發明為達成預定創作目的所採取的技術手段。 In the following, in conjunction with the drawings and the preferred embodiments of the present invention, the technical means adopted by the present invention to achieve the predetermined creative purpose are further described.

請參閱圖1至圖3所示,本發明之晶圓鍍鎢膜加熱器包含一加熱盤10、複數彈片20、一真空裝置(圖中未示)及一加熱裝置(圖中未示),本發明用以對一晶圓A進行加熱;彈片20設於加熱盤10的頂面,晶圓A透過彈片20的抵靠與加熱盤10的頂面間隔設置,真空裝置連接至加熱盤10;當真空裝置啟動後,晶圓A與加熱盤10間的氣體被真空裝置抽出,使晶圓A因兩側面的壓力差而吸附貼靠於加熱盤10的頂面。 Please refer to FIGS. 1 to 3, the wafer tungsten coating heater of the present invention includes a heating plate 10, a plurality of elastic sheets 20, a vacuum device (not shown in the figure) and a heating device (not shown in the figure), The present invention is used to heat a wafer A; the elastic sheet 20 is arranged on the top surface of the heating plate 10, the wafer A is arranged spaced from the top surface of the heating plate 10 through the abutment of the elastic sheet 20, and the vacuum device is connected to the heating plate 10; When the vacuum device is activated, the gas between the wafer A and the heating plate 10 is evacuated by the vacuum device, so that the wafer A is attracted to the top surface of the heating plate 10 due to the pressure difference between the two sides.

請參閱圖1、圖3及圖4所示,前述之加熱盤10具有一加熱平面11、一抽氣孔12、一內環槽13、一外環槽15、複數內徑向槽17、複數外徑向槽18及複數彈片凹槽19,且在本實施例中,加熱盤10進一步包含一中環槽14、一吹氣環槽16及一吹氣通道161;前述之加熱平面11位於加熱盤10的頂面,在本實施例中,加熱平面11的形狀為圓形,且加熱平面11的直徑與晶圓A的直徑大致相同,但加熱平面11的形狀也可以是方形等其他形狀,僅要能均勻加熱晶圓A即可;抽氣孔12貫穿加熱盤10的加熱平面11及底面,在本實施例中,抽氣孔12在加熱平面11上環繞加熱平面11的中心形成有多個抽氣開口,但不以此為限;前述之內環槽13、中環槽14及外環槽15凹設於加熱平面11上,且環繞加熱平面11的中心及抽氣孔12,中環槽14環繞內環槽13,外環槽15環繞中環槽14及內環槽13;在本實施例中,外環槽15相鄰加熱平面11的周緣;內徑向槽17凹設於加熱平面11上,且環繞加熱平面11的中心間隔設置,內徑向槽17的一端連通抽氣孔12,且具體來說,各內徑向槽17的一端分別透過各抽氣開口連通抽氣孔12;內徑向槽17相對抽氣孔12的另一端連通內環槽13,內徑向槽17 將位於內環槽13內的加熱平面11分割為多個面積大致相等的內加熱塊111;外徑向槽18凹設於加熱平面11上,且環繞加熱平面11的中心間隔設置;外徑向槽18的一端連通內環槽13,另一端連通外環槽15,且外徑向槽18弧形地延伸,外徑向槽18將位於內環槽13與外環槽15之間的加熱平面11分割為多個外加熱塊112,藉由使外徑向槽18弧形延伸而使外徑向槽18的總長度較長,且外徑向槽18兩側距離凹槽很近而能夠迅速排氣的有效排氣區域因此能夠完整覆蓋外加熱塊112的全部面積,因此外加熱塊112與晶圓A之間的氣體能夠迅速移動進入外徑向槽18內而被排出,減少晶圓A吸附貼靠於加熱平面11所需的時間;在本實施例中,外徑向槽18的數量為內徑向槽17的兩倍,且每一個內徑向槽17皆有兩個外徑向槽18相對應,即在內環槽13與內徑向槽17連接處沿內環槽13延伸方向的相對兩側皆為一個外徑向槽18,藉此將較接近抽氣孔12的內徑向槽17的抽氣氣流均勻分配給兩個外徑向槽18,使負壓吸附的力量能均勻分佈於整個晶圓A的平面上,同時也藉由在距離加熱平面11的中心較遠的內環槽13與外環槽15之間較密集地設置外徑向槽18,使外加熱塊112的面積與內加熱塊111的寬度不會出現過於顯著的差異,當晶圓A向下移動貼靠加熱平面11時,外加熱塊112的頂面與晶圓A的底面間的氣體便能迅速透過外徑向槽18排出,但外徑向槽18的數量不以此為限,僅要外徑向槽18的數量大於內徑向槽17即可,甚至,外徑向槽18的數量也可以等於內徑向槽17的數量;請參閱圖3至圖5所示,前述之吹氣環槽16凹設於加熱盤10的頂面,且位於加熱平面11的外側;前述之複數吹氣通道161凹設於加熱盤10的底面,且環繞加熱盤10的中心間隔設置,該吹氣通道161與吹氣環槽16相連通;請參閱圖1至圖3所示,前述之彈片凹槽19環繞加熱平面11間隔設置,在本實施例中,彈片凹槽19位於內環槽13的外側,且各彈片凹槽19連通至少二個外徑向槽18,藉此使彈片凹槽19內的氣體能夠迅速透過外徑向槽18排 出,但不以此為限,也可以藉由使彈片凹槽19連通外環槽15或加熱平面11上與抽氣孔12連通其他凹槽以達到相同功效。 Please refer to Figure 1, Figure 3 and Figure 4, the aforementioned heating plate 10 has a heating plane 11, a suction hole 12, an inner ring groove 13, an outer ring groove 15, a plurality of inner radial groove 17, a plurality of outer A radial groove 18 and a plurality of elastic plate grooves 19, and in this embodiment, the heating plate 10 further includes a middle ring groove 14, a blowing ring groove 16 and a blowing channel 161; the aforementioned heating plane 11 is located on the heating plate 10 In this embodiment, the shape of the heating plane 11 is circular, and the diameter of the heating plane 11 is approximately the same as the diameter of the wafer A, but the shape of the heating plane 11 can also be a square or other shapes. The wafer A can be heated uniformly; the exhaust hole 12 penetrates the heating plane 11 and the bottom surface of the heating plate 10. In this embodiment, the exhaust hole 12 has a plurality of exhaust openings formed on the heating plane 11 around the center of the heating plane 11 , But not limited to this; the aforementioned inner ring groove 13, middle ring groove 14, and outer ring groove 15 are recessed on the heating plane 11, and surround the center of the heating plane 11 and the exhaust hole 12, and the middle ring groove 14 surrounds the inner ring groove 13. The outer ring groove 15 surrounds the middle ring groove 14 and the inner ring groove 13; in this embodiment, the outer ring groove 15 is adjacent to the periphery of the heating plane 11; the inner radial groove 17 is recessed on the heating plane 11 and surrounds the heating The center of the plane 11 is spaced apart, and one end of the inner radial groove 17 is connected to the suction hole 12, and specifically, one end of each inner radial groove 17 is respectively connected to the suction hole 12 through each suction opening; the inner radial groove 17 is relatively sucked The other end of the air hole 12 is connected to the inner ring groove 13, and the inner radial groove 17 The heating plane 11 located in the inner ring groove 13 is divided into a plurality of inner heating blocks 111 with approximately the same area; the outer radial groove 18 is recessed on the heating plane 11 and is arranged at intervals around the center of the heating plane 11; One end of the groove 18 is connected to the inner ring groove 13, and the other end is connected to the outer ring groove 15, and the outer radial groove 18 extends in an arc shape. The outer radial groove 18 will be located on the heating plane between the inner ring groove 13 and the outer ring groove 15 11 is divided into a plurality of outer heating blocks 112. By extending the outer radial groove 18 in an arc shape, the total length of the outer radial groove 18 is longer, and the two sides of the outer radial groove 18 are very close to the groove, which can quickly The effective exhaust area of the exhaust can therefore completely cover the entire area of the outer heating block 112, so the gas between the outer heating block 112 and the wafer A can quickly move into the outer radial groove 18 and be exhausted, reducing the number of wafers A The time required for adsorption and abutment on the heating plane 11; in this embodiment, the number of outer radial grooves 18 is twice that of the inner radial grooves 17, and each inner radial groove 17 has two outer radial grooves. The groove 18 corresponds to the inner ring groove 13 and the inner radial groove 17 on the opposite sides along the extension direction of the inner ring groove 13 is an outer radial groove 18, which will be closer to the inner diameter of the suction hole 12 The suction airflow to the groove 17 is evenly distributed to the two outer radial grooves 18, so that the force of the negative pressure adsorption can be evenly distributed on the plane of the entire wafer A, and at the same time, by the distance from the center of the heating plane 11 The outer radial grooves 18 are densely arranged between the inner ring groove 13 and the outer ring groove 15, so that the area of the outer heating block 112 and the width of the inner heating block 111 will not be too significantly different. When the wafer A moves downward When it is close to the heating plane 11, the gas between the top surface of the outer heating block 112 and the bottom surface of the wafer A can be quickly discharged through the outer radial groove 18, but the number of the outer radial groove 18 is not limited to this, only The number of outer radial grooves 18 may be greater than the number of inner radial grooves 17, and even the number of outer radial grooves 18 can be equal to the number of inner radial grooves 17; please refer to Figs. The ring groove 16 is recessed on the top surface of the heating plate 10 and located outside the heating plane 11; the aforementioned plural blowing channels 161 are recessed on the bottom surface of the heating plate 10 and are arranged at intervals around the center of the heating plate 10. The channel 161 communicates with the blowing ring groove 16; please refer to Figures 1 to 3, the aforementioned elastic sheet grooves 19 are arranged at intervals around the heating plane 11. In this embodiment, the elastic sheet grooves 19 are located in the inner ring groove 13 Outside, and each elastic piece groove 19 communicates with at least two outer radial grooves 18, so that the gas in the elastic piece groove 19 can quickly pass through the outer radial groove 18 However, it is not limited to this, and the same effect can be achieved by connecting the elastic groove 19 to the outer ring groove 15 or other grooves on the heating plane 11 and the air suction hole 12.

前述之彈片20設於彈片凹槽19中,各彈片20的一側面突出有一凸點21,各彈片20的凸點21可向上突出加熱平面11,以使晶圓A與加熱平面間11保持一層氣體間隔;前述之真空裝置連通加熱盤10的抽氣孔12,而當真空裝置透過抽氣孔12進行抽氣後,晶圓A吸附貼靠於加熱平面11,彈片20的凸點21則被晶圓A下壓至彈片凹槽19內。 The aforementioned elastic pieces 20 are arranged in the elastic grooves 19, and a convex point 21 protrudes from one side of each elastic piece 20. The convex points 21 of each elastic piece 20 can protrude upward from the heating plane 11, so that a layer is maintained between the wafer A and the heating plane 11 Air gap; the aforementioned vacuum device is connected to the exhaust hole 12 of the heating plate 10, and when the vacuum device is pumped through the exhaust hole 12, the wafer A is adsorbed against the heating plane 11, and the bumps 21 of the elastic sheet 20 are covered by the wafer A is pressed down into the groove 19 of the shrapnel.

前述之加熱裝置連接加熱盤10,提供晶圓加熱的熱能來源。 The aforementioned heating device is connected to the heating plate 10 to provide a source of heat energy for wafer heating.

本創作於使用時,以機械手臂將一晶圓放置於加熱盤10的加熱平面11上方,晶圓A先透過彈片20的凸點21支撐而與加熱平面11保持一氣體間隔,進行晶圓A的預熱;晶圓A預熱至適當溫度後,啟動真空裝置將晶圓A吸附貼靠於加熱平面11上以進行鎢沉積製程。 When this creation is in use, a robotic arm is used to place a wafer above the heating plane 11 of the heating plate 10, and the wafer A is first supported by the bumps 21 of the elastic sheet 20 to maintain an air gap with the heating plane 11 to proceed to wafer A. The preheating; after the wafer A is preheated to a proper temperature, the vacuum device is activated to adsorb the wafer A against the heating plane 11 for the tungsten deposition process.

綜上所述,本發明藉由將複數外徑向槽設計成弧形以減少晶圓吸附貼靠於加熱平面所需的時間。 In summary, the present invention reduces the time required for the wafer to attach to the heating plane by designing a plurality of outer radial grooves in an arc shape.

以上所述僅是本發明的較佳實施例而已,並非對本發明做任何形式上的限制,雖然本發明已以較佳實施例揭露如上,然而並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明技術方案的範圍內,當可利用上述揭示的技術內容作出些許更動或修飾為等同變化的等效實施例,但凡是未脫離本發明技術方案的內容,依據本發明的技術實質對以上實施例所作的任何簡單修改、等同變化與修飾,均仍屬於本發明技術方案的範圍內。 The above are only the preferred embodiments of the present invention, and do not limit the present invention in any form. Although the present invention has been disclosed in the preferred embodiments as above, it is not intended to limit the present invention. Any technical field has Generally knowledgeable persons, without departing from the scope of the technical solution of the present invention, can use the technical content disclosed above to make slight changes or modifications into equivalent embodiments with equivalent changes. However, any content that does not depart from the technical solution of the present invention is based on this The technical essence of the invention makes any simple modifications, equivalent changes and modifications to the above embodiments still fall within the scope of the technical solutions of the present invention.

10:加熱盤 10: Heating plate

11:加熱平面 11: Heating plane

111:內加熱塊 111: inner heating block

112:外加熱塊 112: External heating block

13:內環槽 13: inner ring groove

14:中環槽 14: Central groove

15:外環槽 15: Outer ring groove

16:吹氣環槽 16: Blow ring groove

17:內徑向槽 17: Inner radial groove

18:外徑向槽 18: Outer radial groove

19:彈片凹槽 19: Shrapnel groove

20:彈片 20: shrapnel

21:凸點 21: bump

Claims (7)

一種晶圓鍍鎢膜加熱器,其包含:一加熱盤,其具有:一加熱平面,其位於該加熱盤的頂面;一抽氣孔,其貫穿該加熱盤的該加熱平面及底面;一內環槽,其凹設於該加熱平面上,且環繞該加熱平面的中心及該抽氣孔;一外環槽,其凹設於該加熱平面上,且環繞該加熱平面的中心及該內環槽;複數內徑向槽,其凹設於該加熱平面上,且環繞該加熱平面的中心間隔設置;該等內徑向槽的一端連通該抽氣孔,另一端連通該內環槽;複數外徑向槽,其凹設於該加熱平面上,且環繞該加熱平面的中心間隔設置;該等外徑向槽的一端連通該內環槽,另一端連通該外環槽,且該等外徑向槽弧形地延伸;複數彈片凹槽,該等彈片凹槽環繞該加熱平面間隔設置,該等該彈片凹槽位於該內環槽的外側,且各該彈片凹槽連通其中至少二該外徑向槽;一真空裝置,該真空裝置連通該加熱盤的該抽氣孔;一加熱裝置,其連接該加熱盤。 A wafer-plated tungsten film heater, comprising: a heating plate, which has: a heating plane located on the top surface of the heating plate; a suction hole which penetrates the heating plane and the bottom surface of the heating plate; An annular groove is recessed on the heating plane and surrounds the center of the heating plane and the air extraction hole; an outer ring groove is recessed on the heating plane and surrounds the center of the heating plane and the inner annular groove A plurality of inner radial grooves, which are recessed on the heating plane and are arranged at intervals around the center of the heating plane; one end of the inner radial grooves communicates with the suction hole, and the other end communicates with the inner ring groove; plural outer diameters Grooves, which are recessed on the heating plane and arranged at intervals around the center of the heating plane; one end of the outer radial grooves communicates with the inner ring groove, the other end communicates with the outer ring groove, and the outer radial grooves The grooves extend in an arc shape; a plurality of elastic sheet grooves are arranged at intervals around the heating plane, the elastic sheet grooves are located outside the inner ring groove, and each elastic sheet groove communicates with at least two of the outer diameters To the groove; a vacuum device, the vacuum device connected to the exhaust hole of the heating plate; a heating device, which is connected to the heating plate. 如請求項1所述之晶圓鍍鎢膜加熱器,其中該等外徑向槽的數量大於該等內徑向槽的數量。 The wafer tungsten coating heater according to claim 1, wherein the number of the outer radial grooves is greater than the number of the inner radial grooves. 如請求項2所述之晶圓鍍鎢膜加熱器,其中該等外徑向槽的數量為該等內徑向槽的數量的兩倍。 The wafer tungsten film heater according to claim 2, wherein the number of the outer radial grooves is twice the number of the inner radial grooves. 如請求項1至3中任一項所述之晶圓鍍鎢膜加熱器,其中該外環槽相鄰該加熱平面的周緣。 The wafer tungsten coating heater according to any one of claims 1 to 3, wherein the outer ring groove is adjacent to the periphery of the heating plane. 如請求項1至3中任一項所述之晶圓鍍鎢膜加熱器,其中該加熱盤進一步具有:一吹氣環槽,其凹設於該加熱盤的頂面,且位於該加熱平面的外側;複數吹氣通道,其凹設於該加熱盤的底面,且環繞該加熱盤的中心間隔設置,各該吹氣通道與該吹氣環槽相連通。 The wafer tungsten coating heater according to any one of claims 1 to 3, wherein the heating plate further has: a blowing ring groove, which is recessed on the top surface of the heating plate and located on the heating plane A plurality of blowing channels, which are recessed on the bottom surface of the heating plate, and are arranged at intervals around the center of the heating plate, each of the blowing channels communicates with the blowing ring groove. 如請求項1至3中任一項所述之晶圓鍍鎢膜加熱器,其中該加熱盤進一步具有一中環槽,該中環槽凹設於該加熱平面上,且環繞該加熱平面的中心及該內環槽;該外環槽環繞該中環槽。 The wafer tungsten coating heater according to any one of claims 1 to 3, wherein the heating plate further has a middle ring groove, and the middle ring groove is recessed on the heating plane and surrounds the center of the heating plane and The inner ring groove; the outer ring groove surrounds the middle ring groove. 如請求項1至3中任一項所述之晶圓鍍鎢膜加熱器,其中該晶圓鍍鎢膜加熱器進一步包含複數彈片,該等彈片分別設於該加熱盤的該複數彈片凹槽中,各該彈片的一側面突出有一凸點,各該彈片的該凸點選擇性地向上突出該加熱平面。 The wafer tungsten film heater according to any one of claims 1 to 3, wherein the wafer tungsten film heater further comprises a plurality of elastic pieces, and the elastic pieces are respectively arranged in the plurality of elastic piece grooves of the heating plate Wherein, a convex point protrudes from one side of each elastic piece, and the convex point of each elastic piece selectively protrudes upward from the heating plane.
TW108112827A 2019-04-12 2019-04-12 Wafer Tungsten Film Heater TWI700762B (en)

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Publication number Priority date Publication date Assignee Title
US20050022742A1 (en) * 2003-07-29 2005-02-03 Hong Hyung-Sik Chemical vapor deposition processing equipment for use in fabricating a semiconductor device
US20060000822A1 (en) * 2004-02-23 2006-01-05 Kyocera Corporation Ceramic heater, wafer heating device using thereof and method for manufacturing a semiconductor substrate
JP2006127883A (en) * 2004-10-28 2006-05-18 Kyocera Corp Heater and wafer heating device
JP2007066542A (en) * 2005-08-29 2007-03-15 Kyocera Corp Heater, wafer heating apparatus, and method for manufacturing the heater
US20080006618A1 (en) * 2006-07-07 2008-01-10 Nhk Spring Co., Ltd. Heater unit

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050022742A1 (en) * 2003-07-29 2005-02-03 Hong Hyung-Sik Chemical vapor deposition processing equipment for use in fabricating a semiconductor device
US20060000822A1 (en) * 2004-02-23 2006-01-05 Kyocera Corporation Ceramic heater, wafer heating device using thereof and method for manufacturing a semiconductor substrate
JP2006127883A (en) * 2004-10-28 2006-05-18 Kyocera Corp Heater and wafer heating device
JP2007066542A (en) * 2005-08-29 2007-03-15 Kyocera Corp Heater, wafer heating apparatus, and method for manufacturing the heater
US20080006618A1 (en) * 2006-07-07 2008-01-10 Nhk Spring Co., Ltd. Heater unit

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