[go: up one dir, main page]

TWI799852B - 具有高遷移率p通道電晶體的半導體裝置的效能改良的鰭片高度和sti深度 - Google Patents

具有高遷移率p通道電晶體的半導體裝置的效能改良的鰭片高度和sti深度 Download PDF

Info

Publication number
TWI799852B
TWI799852B TW110116281A TW110116281A TWI799852B TW I799852 B TWI799852 B TW I799852B TW 110116281 A TW110116281 A TW 110116281A TW 110116281 A TW110116281 A TW 110116281A TW I799852 B TWI799852 B TW I799852B
Authority
TW
Taiwan
Prior art keywords
mobility
semiconductor devices
channel transistors
performance improvement
fin height
Prior art date
Application number
TW110116281A
Other languages
English (en)
Other versions
TW202221763A (zh
Inventor
林琨祐
林恩平
葛育菱
廖志騰
Original Assignee
台灣積體電路製造股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 台灣積體電路製造股份有限公司 filed Critical 台灣積體電路製造股份有限公司
Publication of TW202221763A publication Critical patent/TW202221763A/zh
Application granted granted Critical
Publication of TWI799852B publication Critical patent/TWI799852B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0128—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0245—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] by further thinning the channel after patterning the channel, e.g. using sacrificial oxidation on fins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6211—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0158—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0193—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices the components including FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/853—Complementary IGFETs, e.g. CMOS comprising FinFETs
    • H10P14/3211—
    • H10P14/3411—
    • H10P14/6349—
    • H10P50/242—
    • H10P50/691—
    • H10W10/0143—
    • H10W10/17—
TW110116281A 2020-08-13 2021-05-05 具有高遷移率p通道電晶體的半導體裝置的效能改良的鰭片高度和sti深度 TWI799852B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US202063065189P 2020-08-13 2020-08-13
US63/065,189 2020-08-13
US202063072521P 2020-08-31 2020-08-31
US63/072,521 2020-08-31
US17/158,522 2021-01-26
US17/158,522 US12356710B2 (en) 2020-08-13 2021-01-26 Fin height and STI depth for performance improvement in semiconductor devices having high-mobility p-channel transistors

Publications (2)

Publication Number Publication Date
TW202221763A TW202221763A (zh) 2022-06-01
TWI799852B true TWI799852B (zh) 2023-04-21

Family

ID=78728439

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110116281A TWI799852B (zh) 2020-08-13 2021-05-05 具有高遷移率p通道電晶體的半導體裝置的效能改良的鰭片高度和sti深度

Country Status (5)

Country Link
US (2) US12356710B2 (zh)
KR (1) KR102748442B1 (zh)
CN (1) CN113745164B (zh)
DE (1) DE102021102571B4 (zh)
TW (1) TWI799852B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11670681B2 (en) 2021-01-14 2023-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming fully strained channels
CN117577586B (zh) * 2024-01-16 2024-04-30 合肥晶合集成电路股份有限公司 半导体结构及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201351486A (zh) * 2012-06-12 2013-12-16 Taiwan Semiconductor Mfg 二極體、雙極接面電晶體及於鰭型場效電晶體裝置內二極體之製造方法
TW201543678A (zh) * 2014-03-26 2015-11-16 Samsung Electronics Co Ltd 半導體裝置
TW201628087A (zh) * 2014-10-30 2016-08-01 台灣積體電路製造股份有限公司 具有不同圖案密度之半導體裝置之等閘極高度控制方法
TW201709526A (zh) * 2015-06-26 2017-03-01 英特爾股份有限公司 異質磊晶ｎ型電晶體與ｐ型電晶體之以井為基礎之集成
TW201916122A (zh) * 2017-09-28 2019-04-16 台灣積體電路製造股份有限公司 半導體元件的製造方法

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6228731B1 (en) * 1999-08-16 2001-05-08 Taiwan Semiconductor Manufacturing Company Re-etched spacer process for a self-aligned structure
US20080142478A1 (en) * 2006-11-01 2008-06-19 Microchem Corp. Epoxy removal process for microformed electroplated devices
US7612405B2 (en) 2007-03-06 2009-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Fabrication of FinFETs with multiple fin heights
US7560785B2 (en) * 2007-04-27 2009-07-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having multiple fin heights
US8816444B2 (en) 2011-04-29 2014-08-26 Taiwan Semiconductor Manufacturing Company, Ltd. System and methods for converting planar design to FinFET design
US9236267B2 (en) 2012-02-09 2016-01-12 Taiwan Semiconductor Manufacturing Company, Ltd. Cut-mask patterning process for fin-like field effect transistor (FinFET) device
US8476137B1 (en) * 2012-02-10 2013-07-02 Globalfoundries Inc. Methods of FinFET height control
US8785285B2 (en) 2012-03-08 2014-07-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture thereof
US8860148B2 (en) 2012-04-11 2014-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for FinFET integrated with capacitor
US8823065B2 (en) 2012-11-08 2014-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure of semiconductor device
US9105490B2 (en) 2012-09-27 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure of semiconductor device
US8772109B2 (en) 2012-10-24 2014-07-08 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for forming semiconductor contacts
US9236300B2 (en) 2012-11-30 2016-01-12 Taiwan Semiconductor Manufacturing Company, Ltd. Contact plugs in SRAM cells and the method of forming the same
EP2741320B1 (en) * 2012-12-05 2020-06-17 IMEC vzw Manufacturing method of a finfet device with dual-strained channels
US9093533B2 (en) * 2013-07-24 2015-07-28 International Business Machines Corporation FinFET structures having silicon germanium and silicon channels
KR102068980B1 (ko) * 2013-08-01 2020-01-22 삼성전자 주식회사 반도체 장치 및 그 제조 방법
US9136106B2 (en) 2013-12-19 2015-09-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method for integrated circuit patterning
KR102224386B1 (ko) 2014-12-18 2021-03-08 삼성전자주식회사 집적 회로 장치의 제조 방법
US9673083B2 (en) * 2015-01-29 2017-06-06 Globalfoundries Inc. Methods of forming fin isolation regions on FinFET semiconductor devices by implantation of an oxidation-retarding material
US9590077B2 (en) * 2015-05-14 2017-03-07 International Business Machines Corporation Local SOI fins with multiple heights
KR102449901B1 (ko) * 2015-06-23 2022-09-30 삼성전자주식회사 집적회로 소자 및 그 제조 방법
US9728640B2 (en) 2015-08-11 2017-08-08 International Business Machines Corporation Hybrid substrate engineering in CMOS finFET integration for mobility improvement
US9520482B1 (en) 2015-11-13 2016-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method of cutting metal gate
US9735060B1 (en) * 2016-01-26 2017-08-15 Globalfoundries Inc. Hybrid fin cut etching processes for products comprising tapered and non-tapered FinFET semiconductor devices
DE102017118475B4 (de) 2016-11-29 2022-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Selbstjustierte abstandshalter und verfahren zu deren herstellung
US10438855B2 (en) * 2017-02-17 2019-10-08 International Business Machines Corporation Dual channel FinFETs having uniform fin heights
US10707208B2 (en) 2017-02-27 2020-07-07 International Business Machines Corporation Fabrication of fin field effect transistors utilizing different fin channel materials while maintaining consistent fin widths
KR102343202B1 (ko) 2017-06-20 2021-12-23 삼성전자주식회사 반도체 장치 및 이의 제조 방법
US10535654B2 (en) 2017-08-30 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Cut metal gate with slanted sidewalls
US10535736B2 (en) 2017-09-28 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Fully strained channel
US10978351B2 (en) 2017-11-17 2021-04-13 Taiwan Semiconductor Manufacturing Co., Ltd. Etch stop layer between substrate and isolation structure
US10515954B2 (en) 2018-03-18 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having fin structures of varying dimensions
KR102585881B1 (ko) 2018-06-04 2023-10-06 삼성전자주식회사 반도체 소자 및 그 제조 방법.
US10475923B1 (en) * 2018-06-14 2019-11-12 International Business Machines Corporation Method and structure for forming vertical transistors with various gate lengths
US11335683B2 (en) * 2020-06-30 2022-05-17 Qualcomm Incorporated Device channel profile structure

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201351486A (zh) * 2012-06-12 2013-12-16 Taiwan Semiconductor Mfg 二極體、雙極接面電晶體及於鰭型場效電晶體裝置內二極體之製造方法
TW201543678A (zh) * 2014-03-26 2015-11-16 Samsung Electronics Co Ltd 半導體裝置
TW201628087A (zh) * 2014-10-30 2016-08-01 台灣積體電路製造股份有限公司 具有不同圖案密度之半導體裝置之等閘極高度控制方法
TW201709526A (zh) * 2015-06-26 2017-03-01 英特爾股份有限公司 異質磊晶ｎ型電晶體與ｐ型電晶體之以井為基礎之集成
TW201916122A (zh) * 2017-09-28 2019-04-16 台灣積體電路製造股份有限公司 半導體元件的製造方法

Also Published As

Publication number Publication date
TW202221763A (zh) 2022-06-01
DE102021102571B4 (de) 2025-02-06
CN113745164A (zh) 2021-12-03
US20220384273A1 (en) 2022-12-01
US20220052042A1 (en) 2022-02-17
CN113745164B (zh) 2025-07-04
KR102748442B1 (ko) 2024-12-31
DE102021102571A1 (de) 2022-02-17
US12356710B2 (en) 2025-07-08
KR20220021395A (ko) 2022-02-22

Similar Documents

Publication Publication Date Title
JP5373722B2 (ja) 蓄積型ｆｉｎｆｅｔ、回路、及びその製造方法
SG11202106757RA (en) Semiconductor structure having both enhancement mode group iii-n high electron mobility transistors and depletion mode group iii-n high electron mobility transistors
GB2573711A (en) Approach to bottom dielectric isolation for vertical transport fin field effect transistors
CN106158746B (zh) 半导体器件及其形成方法
US10164099B2 (en) Device with diffusion blocking layer in source/drain region
US20140353763A1 (en) Semiconductor devices including fin-fets and methods of fabricating the same
US8866235B2 (en) Source and drain dislocation fabrication in FinFETs
JP2016516301A5 (zh)
US8809918B2 (en) MOSFETs with multiple dislocation planes
TWI799852B (zh) 具有高遷移率p通道電晶體的半導體裝置的效能改良的鰭片高度和sti深度
WO2005004206A3 (en) Integrated circuit having pairs of parallel complementary finfets
GB2527214A (en) Transistor Architecture having extended recessed spacer and source/drain regions and method of making same
KR101738510B1 (ko) 고성능 핀펫 및 그 형성 방법
TW201712800A (en) Sub-fin sidewall passivation in replacement channel FinFETs
WO2016018514A3 (en) Stress in n-channel field effect transistors
EP2725620A3 (en) Field effect transistor and related devices
GB201213195D0 (en) Improving performance and reducing variation of narrow channel devices
US10347748B2 (en) Methods of forming source/drain regions on FinFET devices
US8941180B2 (en) Integrated circuit structure incorporating one or more asymmetric field effect transistors as power gates for an electronic circuit with stacked symmetric field effect transistors
SG168481A1 (en) Field effect transistor having channel silicon germanium
JP2017504192A5 (zh)
US9548216B1 (en) Method of adjusting channel widths of semiconductive devices
US9324869B1 (en) Method of forming a semiconductor device and resulting semiconductor devices
CN204257647U (zh) 半导体器件
CN104916675B (zh) 半导体器件及其制造方法