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TWI799776B - 電感耦合裝置和半導體處理設備 - Google Patents

電感耦合裝置和半導體處理設備 Download PDF

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Publication number
TWI799776B
TWI799776B TW110100246A TW110100246A TWI799776B TW I799776 B TWI799776 B TW I799776B TW 110100246 A TW110100246 A TW 110100246A TW 110100246 A TW110100246 A TW 110100246A TW I799776 B TWI799776 B TW I799776B
Authority
TW
Taiwan
Prior art keywords
processing equipment
semiconductor processing
inductive coupling
coupling devices
devices
Prior art date
Application number
TW110100246A
Other languages
English (en)
Other versions
TW202127505A (zh
Inventor
李興存
Original Assignee
大陸商北京北方華創微電子裝備有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 大陸商北京北方華創微電子裝備有限公司 filed Critical 大陸商北京北方華創微電子裝備有限公司
Publication of TW202127505A publication Critical patent/TW202127505A/zh
Application granted granted Critical
Publication of TWI799776B publication Critical patent/TWI799776B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
TW110100246A 2020-01-07 2021-01-05 電感耦合裝置和半導體處理設備 TWI799776B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202010012890.3 2020-01-07
CN202010012890.3A CN111192812B (zh) 2020-01-07 2020-01-07 电感耦合装置和半导体处理设备

Publications (2)

Publication Number Publication Date
TW202127505A TW202127505A (zh) 2021-07-16
TWI799776B true TWI799776B (zh) 2023-04-21

Family

ID=70709874

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110100246A TWI799776B (zh) 2020-01-07 2021-01-05 電感耦合裝置和半導體處理設備

Country Status (3)

Country Link
CN (1) CN111192812B (zh)
TW (1) TWI799776B (zh)
WO (1) WO2021139618A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111192812B (zh) * 2020-01-07 2022-11-25 北京北方华创微电子装备有限公司 电感耦合装置和半导体处理设备
CN111799197B (zh) * 2020-07-27 2025-11-25 上海邦芯半导体科技有限公司 感性耦合反应器及其工作方法
CN111769062B (zh) * 2020-07-27 2025-09-19 上海邦芯半导体科技有限公司 感性耦合反应器及其工作方法
CN112331546B (zh) * 2020-10-26 2024-06-21 北京北方华创微电子装备有限公司 半导体工艺设备
CN114217093B (zh) * 2021-06-21 2024-04-26 西北工业大学 一种适用于mems模态局部化传感器的环状耦合系统
CN115376878B (zh) * 2022-08-31 2025-09-16 北京北方华创微电子装备有限公司 上电极装置及半导体工艺设备
CN115898800A (zh) * 2022-11-09 2023-04-04 兰州空间技术物理研究所 一种射频等离子体源快速启动与维持系统及方法
CN119324146A (zh) * 2023-07-17 2025-01-17 北京北方华创微电子装备有限公司 线圈连接件、电极线圈连接结构及半导体工艺设备

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1006557A2 (en) * 1996-02-09 2000-06-07 Nihon Shinku Gijutsu Kabushiki Kaisha Apparatus for generating and utilizing magnetically neutral line discharge type plasma
CN1559077A (zh) * 2001-09-28 2004-12-29 ����ͨѶ�ɷ����޹�˾ 产生等离子体的方法和装置
WO2005093780A2 (en) * 2004-03-22 2005-10-06 Varian Semiconductor Equipment Associates, Inc. Rf plasma source with conductive top section
US20140020837A1 (en) * 2012-07-20 2014-01-23 Applied Materials, Inc. Inductively coupled plasma source with multiple dielectric windows and window-supporting structure
CN104862671A (zh) * 2014-02-24 2015-08-26 北京北方微电子基地设备工艺研究中心有限责任公司 一种反应腔室及等离子体加工设备
TW201831054A (zh) * 2016-11-01 2018-08-16 中微半導體設備（上海）有限公司 電漿處理裝置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5669975A (en) * 1996-03-27 1997-09-23 Sony Corporation Plasma producing method and apparatus including an inductively-coupled plasma source
KR100311234B1 (ko) * 1999-01-18 2001-11-02 학교법인 인하학원 고품위 유도결합 플라즈마 리액터
KR100777151B1 (ko) * 2006-03-21 2007-11-16 주식회사 디엠에스 하이브리드형 플라즈마 반응장치
US20100096255A1 (en) * 2008-10-22 2010-04-22 Applied Materials, Inc. Gap fill improvement methods for phase-change materials
CN102300383B (zh) * 2010-06-23 2013-03-27 北京北方微电子基地设备工艺研究中心有限责任公司 一种电感耦合装置及应用该装置的等离子体处理设备
CN103839742A (zh) * 2012-11-28 2014-06-04 中微半导体设备(上海)有限公司 用于等离子体处理器的磁场分布调节装置及其调节方法
CN106328472B (zh) * 2015-07-02 2018-11-06 北京北方华创微电子装备有限公司 等离子体产生装置和半导体加工设备
CN108573846A (zh) * 2017-03-09 2018-09-25 北京北方华创微电子装备有限公司 等离子体腔室及等离子体加工设备
CN110729165B (zh) * 2018-07-17 2022-05-27 北京北方华创微电子装备有限公司 电感耦合装置、工艺腔室和半导体处理设备
CN111192812B (zh) * 2020-01-07 2022-11-25 北京北方华创微电子装备有限公司 电感耦合装置和半导体处理设备

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1006557A2 (en) * 1996-02-09 2000-06-07 Nihon Shinku Gijutsu Kabushiki Kaisha Apparatus for generating and utilizing magnetically neutral line discharge type plasma
CN1559077A (zh) * 2001-09-28 2004-12-29 ����ͨѶ�ɷ����޹�˾ 产生等离子体的方法和装置
WO2005093780A2 (en) * 2004-03-22 2005-10-06 Varian Semiconductor Equipment Associates, Inc. Rf plasma source with conductive top section
US20140020837A1 (en) * 2012-07-20 2014-01-23 Applied Materials, Inc. Inductively coupled plasma source with multiple dielectric windows and window-supporting structure
CN104862671A (zh) * 2014-02-24 2015-08-26 北京北方微电子基地设备工艺研究中心有限责任公司 一种反应腔室及等离子体加工设备
TW201831054A (zh) * 2016-11-01 2018-08-16 中微半導體設備（上海）有限公司 電漿處理裝置

Also Published As

Publication number Publication date
TW202127505A (zh) 2021-07-16
CN111192812B (zh) 2022-11-25
WO2021139618A1 (zh) 2021-07-15
CN111192812A (zh) 2020-05-22

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