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TWI799511B - 電漿蝕刻方法及電漿蝕刻裝置 - Google Patents

電漿蝕刻方法及電漿蝕刻裝置 Download PDF

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Publication number
TWI799511B
TWI799511B TW108105018A TW108105018A TWI799511B TW I799511 B TWI799511 B TW I799511B TW 108105018 A TW108105018 A TW 108105018A TW 108105018 A TW108105018 A TW 108105018A TW I799511 B TWI799511 B TW I799511B
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TW
Taiwan
Prior art keywords
plasma etching
etching method
etching apparatus
plasma
etching
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Application number
TW108105018A
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English (en)
Other versions
TW201937593A (zh
Inventor
後平拓
箕浦佑也
Original Assignee
日商東京威力科創股份有限公司
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Publication of TW201937593A publication Critical patent/TW201937593A/zh
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Publication of TWI799511B publication Critical patent/TWI799511B/zh

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TW108105018A 2018-02-15 2019-02-15 電漿蝕刻方法及電漿蝕刻裝置 TWI799511B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2018024761 2018-02-15
JP2018-024761 2018-02-15
JP2018214584A JP7158252B2 (ja) 2018-02-15 2018-11-15 プラズマエッチング方法及びプラズマエッチング装置
JP2018-214584 2018-11-15

Publications (2)

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TW201937593A TW201937593A (zh) 2019-09-16
TWI799511B true TWI799511B (zh) 2023-04-21

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TW108105018A TWI799511B (zh) 2018-02-15 2019-02-15 電漿蝕刻方法及電漿蝕刻裝置

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JP (1) JP7158252B2 (zh)
TW (1) TWI799511B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7604145B2 (ja) * 2019-11-25 2024-12-23 東京エレクトロン株式会社 基板処理方法及びプラズマ処理装置
GB201919220D0 (en) * 2019-12-23 2020-02-05 Spts Technologies Ltd Method of plasma etching
JP7454983B2 (ja) * 2020-03-30 2024-03-25 東京エレクトロン株式会社 エッジリング及びプラズマ処理装置
KR20220161452A (ko) * 2020-03-31 2022-12-06 램 리써치 코포레이션 염소 (chlorine) 를 사용한 고 종횡비 유전체 에칭
TWI874690B (zh) * 2020-08-12 2025-03-01 日商東京威力科創股份有限公司 蝕刻方法及電漿蝕刻裝置
US20250016995A1 (en) * 2023-07-07 2025-01-09 Nanya Technology Corporation Memory device with tapered bit line contact

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002110650A (ja) * 2000-10-03 2002-04-12 Tokyo Electron Ltd プラズマエッチング方法およびプラズマエッチング装置
JP2017050529A (ja) * 2015-08-12 2017-03-09 セントラル硝子株式会社 ドライエッチング方法
JP2017228690A (ja) * 2016-06-23 2017-12-28 東京エレクトロン株式会社 エッチング処理方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6454492B2 (ja) * 2014-08-08 2019-01-16 東京エレクトロン株式会社 多層膜をエッチングする方法
JP6498022B2 (ja) * 2015-04-22 2019-04-10 東京エレクトロン株式会社 エッチング処理方法
JP6516603B2 (ja) * 2015-04-30 2019-05-22 東京エレクトロン株式会社 エッチング方法及びエッチング装置
CN106298502B (zh) * 2015-05-18 2019-04-09 中微半导体设备(上海)股份有限公司 一种利用等离子体对多层材料刻蚀的方法
US10847374B2 (en) * 2017-10-31 2020-11-24 Lam Research Corporation Method for etching features in a stack

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002110650A (ja) * 2000-10-03 2002-04-12 Tokyo Electron Ltd プラズマエッチング方法およびプラズマエッチング装置
JP2017050529A (ja) * 2015-08-12 2017-03-09 セントラル硝子株式会社 ドライエッチング方法
JP2017228690A (ja) * 2016-06-23 2017-12-28 東京エレクトロン株式会社 エッチング処理方法

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Publication number Publication date
JP2019145780A (ja) 2019-08-29
JP7158252B2 (ja) 2022-10-21
TW201937593A (zh) 2019-09-16

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