TWI781582B - Methods of cleaning and handling microelectronic devices and related tooling and assemblies - Google Patents

Abstract

This application relates to methods of cleaning and handling microelectronic devices and related tooling and assemblies. An apparatus for handling a semiconductor die may include one or more nozzles configured to supply and suction a fluid over at least one semiconductor die. The apparatus may include a picking apparatus comprising a pick head for picking the at least one semiconductor die. The one or more nozzles may be configured to clean a surface of the at least one semiconductor die, at least partially remove an adhesive between the at least one semiconductor die and a support element, or both.

Description

Method of cleaning and treating microelectronic devices and related tools and components

Embodiments of the invention generally relate to methods of cleaning and treating microelectronic device components. In particular, embodiments of the invention relate to methods of cleaning, picking, transporting and assembling components of microelectronic devices, and to related tools and components.

As the performance of electronic devices and systems increases, there is an associated need to increase the performance of the microelectronic components of such systems while maintaining or even reducing the physical dimensions (ie, length, width, and height) of microelectronic devices or components. Such needs are typically, but not exclusively, associated with mobile and high performance devices. To maintain or reduce the footprint and height of component assemblies in the form of microelectronic devices (e.g., semiconductor dies), provision is made for vertical electrical (i.e., signal, power, ground/bias) between stacked components Three-dimensional (3D) assemblies of stacked components called through-silicon vias (TSVs) for communication have become more common, which combine reductions in component thickness and space between bond wires (i.e., stacked components) ) uses a prefabricated dielectric film to reduce bond wire thickness while increasing bond wire uniformity. Such dielectric films include, for example, so-called non-conductive films (NCF) and wafer level underfills (WLUF), such terms are often used interchangeably. While effective in reducing the height of 3D microelectronic device components, reducing the thickness of a microelectronic device, such as a semiconductor die, to about 50 μm or less (e.g., 30 μm, 20 μm) increases device vulnerability and susceptibility to cracking under stress, specifically compressive (ie, impact) stress and bending stress. Reducing bond wire thickness may also aggravate the vulnerability of such extremely thin microelectronic devices, since thin dielectric material (e.g., NCF) in the bond wire may No longer provides any cushioning effect or ability to contain particulate contamination in the bond wire. Non-limiting examples of microelectronic device assemblies including stacked microelectronic devices that may be subject to stress-induced cracking include assemblies of semiconductor memory die alone or in combination with other die functions (e.g., logic), including so-called High Bandwidth Memory (HBMx), Hybrid Memory Cube (HMC) and Chip-to-Wafer (C2W) components.

Some embodiments of the invention may include a method of processing microelectronic device components. The method can include supplying a fluid over a portion of a surface of the semiconductor die. The method may also include pumping the fluid from another portion of the surface of the semiconductor die. The method may further include lifting the semiconductor die from a supporting member after supplying and pumping the fluid. The method may also include supplying the fluid over a portion of the opposing surface of the semiconductor die. The method can further include pumping the fluid from another portion of the opposing surface of the semiconductor die. The method can also include positioning the semiconductor die on another microelectronic device component.

Other embodiments of the invention may include a method. The method may include removing at least a portion of the adhesive between the semiconductor die and the support member. The method may further include picking up the semiconductor die from the support member with a pick-up tool by applying a vacuum to one side of the semiconductor die and the support member. The method can also include lifting the semiconductor die with the pick tool. The method may further include transferring the semiconductor die to another location using the pick tool.

Other embodiments of the invention may include an apparatus for processing microelectronic devices. The device may include at least one nozzle. The nozzle can include a fluid outlet port configured and positionable to supply fluid on the surface of the microelectronic device. The nozzle can further include a suction port configured to receive a supply of fluid from the surface of the microelectronic device. The apparatus can further include a pick arm having a pick surface configured and positionable to receive the microelectronic device on the pick surface by applying a vacuum to the surface.

Other embodiments of the invention may include an apparatus for processing microelectronic devices. The equipment may include cleaning equipment and picking equipment. The cleaning apparatus can include a plurality of nozzles configured and positionable to supply cleaning fluid to surfaces of a plurality of semiconductor dies and simultaneously suck the cleaning fluid from the surfaces. The cleaning device may further include a cleaning fluid reservoir in selective communication with the plurality of nozzles. The cleaning apparatus can also include a vacuum source configured to draw the cleaning fluid through the plurality of nozzles. The pick-up apparatus may include a pick-up head that may be positioned proximate to the semiconductor die after the cleaning fluid has been supplied and aspirated from the semiconductor die. The pick-up apparatus may further include a vacuum source in selective communication with the pick-up head to attract the cleaned semiconductor die to the pick-up head.

priority claim

This application asserts a U.S. provisional patent application for "METHODS OF CLEANING AND HANDLING MICROELECTRONIC DEVICE COMPONENTS AND RELATED TOOLING AND ASSEMBLIES" filed on December 2, 2020 Benefits on the filing date of No. 63/120,260.

The diagrams presented herein are not intended as actual views of any particular microelectronic device, microelectronic device assembly tool, or component thereof, but are merely idealized representations used to describe illustrative embodiments. The figures are not necessarily drawn to scale.

As used herein, the term "substantially" with respect to a given parameter means and includes that a given parameter, characteristic or condition satisfies a small degree of variation (e.g., within acceptable manufacturing tolerances) as will be understood by those skilled in the art. degree. For example, a parameter that is substantially satisfied can be at least about 90% satisfied, at least about 95% satisfied, at least about 99% satisfied, or even at least about 100% satisfied.

As used herein, relative terms, such as "first", "second", "top", "bottom", etc., are used for clarity and convenience in understanding the present invention and drawings, and do not imply or depend on any particular preference, orientation or order, unless the context clearly dictates otherwise.

As used herein, the term "and/or" means and includes any and all combinations of one or more of the associated listed items.

As used herein, the terms "vertical" and "landscape" refer to an orientation as depicted in the Figures.

FIG. 1 illustrates a microelectronic device 100 . Microelectronic device 100 may include a plurality of semiconductor die 102 configured in a stack. A dielectric film 104 , such as a nonconductive film (NCF) or a wafer level underfill (WLUF), may be positioned between each of the semiconductor dies 102 . Microelectronic device 100 may include through-silicon vias (TSVs) 106 aligned with contacts in the form of conductive pillars 108p that are optionally capped with solder 108s and bonded to terminal pads 108t of adjacent semiconductor die 102 , thereby providing electrical contact between semiconductor die 102 and/or throughout the die stack. For example, TSVs 106 and aligned contacts can provide power, ground/bias, and signal connections.

The height of the microelectronic device 100 can be reduced by reducing the thickness of the semiconductor die 102 and/or the dielectric film 104 . Reducing the thickness of semiconductor die 102 may make semiconductor die 102 more brittle and susceptible to damage in the form of micro-cracks, cracks, and edge chipping during the pick-and-stack process, as described in further detail below. Reducing the thickness of the dielectric film 104 may reduce the ability of the dielectric film 104 to provide any buffering effect or contain particulate contamination in the bond wire without damaging the semiconductor die 102 . For example, contamination particles between semiconductor die 102 can cause one or more of semiconductor die 102 to be damaged by picking up semiconductor die 102 from a carrier, transferring it to a bonding terminal, or stacking it on another semiconductor die. 102 or on the substrate to bend and/or crack due to stress concentrations caused by the presence of contaminant particles. In some embodiments, contaminant particles between the semiconductor die 102 may substantially prevent one or more of the conductive pillars 108p from making electrical contact with the aligned terminal pads 108t.

2A and 2B show enlarged views of electrical connection points between two semiconductor die 102 that are impaired due to the presence of particulate contamination. As shown in FIGS. 2A and 2B , particles 202 , such as particles of organic (eg, polymer) material or inorganic (eg, silicon) material, may be present in the bonding wires between semiconductor die 102 . The bonding wires between the semiconductor die 102 may include a dielectric film 104 and a solder 108s configured to provide an electrical connection between the conductive pillar 108p and the aligned terminal pad 108t adjacent to the semiconductor die 102 . In some cases, particles 202 may be located between one or more sets of conductive posts 108p and terminal pads 108t, as shown in FIGS. 2A and 2B , such that particles 202 may interrupt or displace solder 108s. In assemblies employing direct diffusion bonding of the conductive posts 108p to the terminal pads 108t or using thermocompression bonding to melt the solder 108s to bond the conductive posts 108p to the terminal pads 108 as depicted in FIGS. The conductive posts and the terminal pads are in contact with each other.

The particles 202 may cause the associated microelectronic device 100 to fail. For example, the particles 202 can substantially prevent an operable electrical connection between the at least one conductive post 108p and the terminal pad 108t. In some cases, particles 202 may allow a portion of solder 108s to form a connection between one portion of conductive post 108p and terminal pad 108t while substantially preventing a connection between conductive post 108p and another portion of terminal pad 108t. Partial connections between conductive posts 108p and terminal pads 108t may pass initial testing, but exhibit increased resistance, generating heat that may prematurely fail the connection. In some cases with extremely close spacing (ie, spaces) between connections, particles 202 can displace solder 108s and form an electrical connection between two laterally adjacent pairs of contacts, causing a short circuit.

3A and 3B illustrate views of a semiconductor die 102 with damage caused by the presence of contaminant particles 302 in the bond wires between the semiconductor die 102 . As described above, reducing the thickness of the semiconductor die 102 can make the semiconductor die 102 more brittle, and reducing the thickness of the dielectric film 104 can reduce the ability of the dielectric film 104 to provide any cushioning effect or contain particles in the bond wires Pollution capacity. When semiconductor die 102 are stacked and pressed together, particles 302 in the spaces between semiconductor die 102 may lift and/or fracture a portion of semiconductor die 102 , thereby creating a fractured portion 304 of semiconductor die 102 (eg, peeled parts, cracks, chips, etc.).

Smaller contaminant particles 302 may cause microcracks or even cracks in semiconductor die 102 as the thickness of dielectric film 104 is reduced. For example, in near zero bondline (NZB) devices and hybrid bonding technologies currently under development, the dielectric film 104 may comprise silicon oxide or very thin polymers, allowing bondline thicknesses of less than about 1 micron (μm), such as less than about 500 nanometers (nm). Contaminant particles 302 in a similar size range, for example between about 600 nm and about 1 μm, can cause stress between adjacent semiconductor die 102 in the case of bond wires smaller than about 1 μm concentrated, thereby creating cracks or microcracks.

Fractured portion 304 may render associated semiconductor die 102 useless. Because the stack of semiconductor die 102 may not experience substantial stress until after the entire stack is assembled and thermocompression bonded, semiconductor die 102 may not crack until after the stack of semiconductor die 102 is assembled and bonded. Thus, cracked portion 304 may render the entire stack of semiconductor die 102 useless. Thus, during the production of microelectronic devices using acceptable known good die (KGD), semiconductor die 102 due to post-assembly structural damage caused by contaminant particles and electrical connection problems caused by the contaminant particles, semiconductor die 102 The presence of contaminant particles in the bond wires of the stack can result in significant yield loss.

In some cases, microcracks, cracks, or edge chipping in the semiconductor die 102 may be caused during the pick-up process when the singulated semiconductor die 102 is removed from a carrier material, such as a dicing tape or a carrier wafer. The lower surface of the singulated semiconductor die 102 may be coupled to the upper surface of the carrier material by an adhesive to maintain position and alignment prior to the pick-up process. However, when the semiconductor die 102 is lifted or picked up from the carrier material, the resistance of the adhesive (and specifically, where different portions of the adhesive in contact with the semiconductor die 102 have different bond strengths) may be sufficient to make the semiconductor die 102 The pellets 102 crack as they are lifted from the carrier material. For example, if the adhesive along the perimeter of the semiconductor die 102 is not peeled away from the semiconductor die 102 at the same time as the central portion of the adhesive, the semiconductor die 102 may crack or break due to bending forces when lifted from the carrier material. . As the thickness of the semiconductor die 102 decreases and the semiconductor die 102 becomes more brittle, the semiconductor die 102 may become more susceptible to damage during the pick-up process due to resistance or uneven resistance of the adhesive to be stripped.

FIG. 4 shows a number of semiconductor die 402 after a cutting operation and before a picking operation. The dicing operation may be used to form streets 404 between individual semiconductor die 402 of the semiconductor wafer, thereby separating or “singulating” the semiconductor wafer into individual semiconductor die 402 . Cutting operations may include laser cutting operations (eg, stealth cutting) or plasma cutting. Different cutting operations can affect the width of the track (eg kerf width). For example, laser cutting operations can produce track widths between about 40 μm and about 20 μm, and plasma cutting operations can produce track widths between about 10 μm and about 5 μm.

The dicing operation and/or movement of additional components, tools, materials, adjacent semiconductor die 402 , etc. may generate or introduce contaminant particles 406 to the surfaces of the semiconductor die 402 and/or to the streets 404 between the semiconductor die 402 . As described above, after a semiconductor die 402 is deployed into a die stack or other microelectronic device assembly, contaminant particles 406 can potentially damage the associated semiconductor die 402 or adjacent semiconductor die 402 . Accordingly, removing contaminant particles 406 prior to pickup from the carrier material can improve the reliability of the resulting microelectronic device and/or by reducing damage caused by one or more defective semiconductor die 402 or connections in the microelectronic device assembly. The yield of the microelectronic device manufacturing process is improved by resulting in the number of useless microelectronic devices.

Semiconductor die 402 may be supported by carrier material 412 (eg, dicing tape on a film frame) throughout the dicing operation and until the pick-up operation. Carrier material 412 may include adhesive 408 and backing 410 . The backing 410 may provide support to maintain the relative position and rotational orientation between adjacent semiconductor die 402 and prevent the semiconductor die 402 from moving. The carrier material 412 can support and position the semiconductor die 402 so that a pick-up tool can position and lift individual semiconductor die 402 from the carrier material 412 at the appropriate time during assembly of the microelectronic device.

FIG. 5 illustrates process actions for removing contaminant particles 406 from semiconductor die 402 . Nozzle 502 may be used to supply fluid to and remove fluid from semiconductor die 402 . Nozzle 502 may include a nozzle outlet 506 and a nozzle inlet 504 . Nozzle outlet 506 can be sized and configured to supply cleaning fluid over semiconductor die 402 , and nozzle inlet 504 can be sized and configured to draw cleaning fluid and any suspended contaminant particles from semiconductor die 402 . In some embodiments, the cleaning fluid may be water, such as deionized water (DI water). In some embodiments, the cleaning fluid may be a solvent, such as an alcohol, ester, or ketone.

In some embodiments, the nozzle outlet 506 and the nozzle inlet 504 may be arranged as shown in FIG. 5 such that the nozzle outlet 506 is centrally located and the nozzle inlet 504 is positioned on an outer portion of the nozzle 502, proximate to the associated semiconductor die. Around 402. Nozzle outlet 506 may supply cleaning fluid over semiconductor die 402 such that cleaning fluid may flow from a central region of semiconductor die 402 to top surface 510 (e.g., active surface) of semiconductor die 402 according to arrow 508, and pass close to The nozzle inlet 504 at the periphery of the semiconductor die 402 leads back into the nozzle 502 . Cleaning fluid may also flow into channels 404 between semiconductor die 402 . The cleaning fluid can capture the contaminant particles 406 from the top surface 510 of the semiconductor die 402 and the channels 404 between the semiconductor die 402 and suspend the contaminant particles 406 in the cleaning fluid such that when the fluid flows through the nozzle inlet 504 to the nozzle At 502, contaminant particles 406 may be removed with the cleaning fluid.

In other embodiments, nozzle inlet 504 may be positioned at a central location, while nozzle outlet 506 is positioned on an outer portion of nozzle 502 proximate the perimeter of associated semiconductor die 402 , as shown and described in more detail in FIG. 8 .

Nozzle 502 may be configured such that substantially all of the cleaning fluid supplied by nozzle outlet 506 is removed by nozzle inlet 504 . For example, nozzle inlet 504 may be configured to remove (eg, suction, vacuum, etc.) at least the same amount of cleaning fluid that nozzle outlet 506 is configured to supply. In some embodiments, the transverse cross-sectional areas of nozzle outlet 506 and nozzle inlet 504 may be substantially the same. In some embodiments, the nozzle inlet 504 may have a larger cross-sectional area than the nozzle outlet 506 . The larger nozzle inlet 504 can compensate for the pressure difference between the cleaning fluid flowing out of the nozzle outlet 506 and the cleaning fluid on the semiconductor die 402 . In some embodiments, a larger nozzle inlet 504 may enable the nozzle 502 to more easily remove larger contaminant particles 406 suspended and/or trapped in the cleaning fluid.

In some embodiments, the flow between nozzle outlet 506 and nozzle inlet 504 can be balanced by adjusting the fluid pressure in nozzle outlet 506 and the vacuum pressure in nozzle inlet 504 . For example, the fluid pressure in nozzle outlet 506 can be reduced and the vacuum pressure in nozzle inlet 504 can be increased until the flow into nozzle inlet 504 is substantially equal to the flow out of nozzle outlet 506 .

In some embodiments, the cleaning fluid may be pulsed, such as by ultrasonic pulse delivery, to provide additional cleaning properties. For example, delivery of ultrasonic pulses of cleaning fluid can create a scrubbing action to enhance removal of contaminant particles 406 . Ultrasonic pulse delivery can generate cavitation bubbles in the cleaning fluid, which can emerge from the surface of the semiconductor die 402 and small cavities such as the streets 404 between the semiconductor die 402 or conductive elements on the top surface 510 (i.e. , the space between the conductive pillars) removes the pollutant particles 406.

In some embodiments, adhesive 408 may be formulated to be weakened or removed by a cleaning fluid. For example, adhesive 408 may be a water soluble adhesive such as HOGOMAX® sold by Disco Corporation. In other embodiments, the adhesive 408 is soluble in certain solvents. When cleaning fluid is provided by nozzle 502 over semiconductor die 402 , the cleaning fluid may enter lanes 404 and contact adhesive 408 in lanes 404 and on the underside of semiconductor die 402 . As shown in FIG. 6 , the cleaning fluid may at least partially remove adhesive 408 from beneath semiconductor die 402 . For example, as shown in FIG. 6 , a portion of adhesive 408 may be substantially removed in a region around the perimeter of the underside of semiconductor die 402 .

FIG. 6 illustrates a pick-up process performed to remove semiconductor die 402 . As described above, the cleaning fluid may remove a portion of the adhesive 408 . In some cases, the cleaning fluid may form undercuts 604 under semiconductor die 402 . Undercut 604 may be a region under semiconductor die 402 that is substantially free of adhesive 408 . Adhesive residue 606 may remain in the central region of semiconductor die 402 . The amount of adhesive 408 removed from undercut 604 may depend on the solubility of adhesive 408 with respect to the cleaning fluid and the amount of time nozzle 502 is supplying cleaning fluid over semiconductor die 402 . In some cases, nozzle 502 and associated tools may be configured to supply cleaning fluid over semiconductor die 402 for between about 1 second (s) and about 60 s, such as between about 1 and about 30 s.

As described above, some semiconductor die 402 may break or crack during the picking process due to resistance created by adhesive 408 . Resistance may decrease as the size (ie, footprint) of adhesive remnant 606 decreases. Thus, as the size of the undercut 604 increases, the likelihood of the semiconductor die 402 breaking or cracking during the picking process may decrease. Furthermore, during the pick-up process, the peripheral region of the semiconductor die 402 is where the adhesive 408 is most likely to resist delamination from the semiconductor die 402 and cause the semiconductor die 402 to crack or crack under stress elevated by the vacuum force applied by the pick-up tool. area. Therefore, removal of adhesive 408 from the peripheral region on the underside of semiconductor die 402 not only reduces the adhesive force of semiconductor die 402 to backing 410, but also concentrates the adhesive force along the upward direction of movement during pick-up, thereby eliminating The bending force and the possibility of cracking or cracking the semiconductor die 402 are substantially reduced.

During the picking process, pick tool 602 may be configured to pull semiconductor die 402 away from backing 410 . The pick-up tool 602 may use suction or vacuum to secure the top surface 510 of the semiconductor die 402 to the pick-up tool 602 . After pick-up tool 602 is secured to semiconductor die 402 , pick-up tool 602 may apply an upward force on semiconductor die 402 in a direction away from backing 410 . When the pick tool 602 applies an upward force away from the backing 410, the ejector 608 can simultaneously apply a supplemental upward force from the opposite side of the backing 410, thereby pushing the semiconductor die in a direction toward the pick tool 602 and away from the backing 410. Grain 402. Adhesive remnant 606 may cause semiconductor die 402 to peel from backing 410 under the influence of forces generated by pick tool 602 and ejector 608, for example by breaking, shearing or tearing adhesive remnant 606 .

Referring now to FIG. 7 , after the semiconductor die 402 is picked up from the backing 410 , the rear surface 702 of the semiconductor die 402 may be cleaned by a nozzle 704 . For example, the pick-up tool 602 can move the semiconductor die 402 such that the rear surface 702 of the semiconductor die 402 can be exposed. Nozzle 704 may be positioned proximate exposed back surface 702 of semiconductor die 402 . The pick tool 602 can move the semiconductor die 402 to a position close to the nozzle 704 . In some embodiments, the nozzle 704 can be moved to a position close to the rear surface 702 of the semiconductor die 402 . In other embodiments, the nozzle 704 may remain substantially stationary, and the pick tool 602 may move the semiconductor die 402 to a position proximate to the nozzle 704 .

Nozzle 704 may have a configuration similar to nozzle 502 described above. For example, nozzle 704 may include a nozzle outlet 706 at a central location and a nozzle inlet 708 at an outer location near the peripheral region of semiconductor die 402 . Nozzle outlet 706 may be configured to supply cleaning fluid over rear surface 702 of semiconductor die 402 , and nozzle inlet 708 may be configured to draw cleaning fluid and any suspended contaminant particles from rear surface 702 of semiconductor die 402 . In some embodiments, the cleaning fluid can be water, such as DI water, or a solvent, such as an alcohol, ester, or ketone.

The nozzle outlet 706 can supply cleaning fluid on the rear surface 702 of the semiconductor die 402, so that the cleaning fluid can flow from the central region of the semiconductor die 402 to the rear surface 702 of the semiconductor die 402 according to the arrow 710, and pass close to the semiconductor die 402 The peripheral nozzle inlet 708 goes back into the nozzle 704. The cleaning fluid can capture the contaminant particles 406 from the rear surface 702 of the semiconductor die 402 and suspend the contaminant particles 406 within the cleaning fluid so that when the fluid flows into the nozzle 704 through the nozzle inlet 708, the contaminant particles 406 can follow the cleaning fluid. Fluid is removed.

In some embodiments, the flow between nozzle outlet 706 and nozzle inlet 708 may be balanced by adjusting the fluid pressure in nozzle outlet 706 and the vacuum pressure in nozzle inlet 708 . For example, the fluid pressure in nozzle outlet 706 can be reduced and the vacuum pressure in nozzle inlet 708 can be increased until the flow into nozzle inlet 708 is substantially equal to the flow out of nozzle outlet 706 .

In some embodiments, the cleaning fluid may be pulsed, such as by ultrasonic pulse delivery, to provide additional cleaning properties. As described above, ultrasonic pulse delivery can create cavitation bubbles in the cleaning fluid that can dislodge contaminant particles 406 from the surface and small cavities or cracks of semiconductor die 402 .

FIG. 8 shows a nozzle 802 . Nozzle 802 may be used to remove contaminant particles 406 during the process depicted in FIG. 5 and/or the process depicted in FIG. 7 . Nozzle 802 may include a nozzle inlet 806 at a central location and a nozzle outlet 804 at an outer location near the peripheral region of semiconductor die 402 . Nozzle outlet 804 may be configured to supply cleaning fluid over semiconductor die 402 , and nozzle inlet 806 may be configured to draw cleaning fluid and any suspended contaminant particles from semiconductor die 402 .

Nozzle outlet 804 can supply cleaning fluid over semiconductor die 402 such that cleaning fluid can flow from the peripheral region of semiconductor die 402 to the surface of semiconductor die 402 according to arrow 808 and through the area near the central region of semiconductor die 402 Nozzle inlet 806 leads back into nozzle 802 . The cleaning fluid can capture the contaminant particles 406 from the semiconductor die 402 and suspend the contaminant particles 406 within the cleaning fluid so that when the fluid flows into the nozzle 802 through the nozzle inlet 806, the contaminant particles 406 can be displaced with the cleaning fluid. remove.

In some embodiments, nozzle outlets 804 may be positioned in regions outside the perimeter of semiconductor die 402 , such as in the region of streets 404 between semiconductor die 402 . Thus, during the cleaning process depicted in FIG. 5 , nozzle outlet 804 may supply cleaning fluid into lane 404 , and the cleaning fluid may then flow out of lane 404 and onto semiconductor die 402 . In other embodiments, the nozzle outlet 804 may be positioned inside the perimeter of the semiconductor die 402 such that the nozzle outlet 804 may supply cleaning fluid onto the top surface 510 or the back surface 702 of the semiconductor die 402 .

FIG. 9 shows a number of semiconductor die 902 after a cutting operation and before a picking operation. The dicing operation may be used to form streets 904 between individual semiconductor dies 902 , thereby separating semiconductor dies 902 . Cutting operations may include sawing operations, laser cutting operations (eg, stealth cutting), or plasma cutting operations.

Dicing operations and/or movement (eg, introduction or removal) of additional components, tools, materials, etc. may generate or introduce contaminant particles 906 to surfaces of semiconductor die 902 and/or to streets 904 between semiconductor die 902 . As described above, after a semiconductor die 902 is deployed into a microelectronic device assembly, such as a die stack, contaminant particles 906 can potentially damage the associated semiconductor die 902 or adjacent semiconductor die 902 .

Semiconductor die 902 may be supported by carrier material 910 during dicing operations and until a picking operation. The carrier material 910 may be a substantially rigid material, such as a carrier wafer, glass or ceramic substrate, or the like. Semiconductor die 902 may be fixed to carrier material 910 by adhesive 908 .

FIG. 10 illustrates process steps for removing contaminant particles 906 from semiconductor die 902 . Nozzle 1002 may be used to supply fluid to and remove fluid from semiconductor die 902 . Nozzle 1002 may include a nozzle outlet 1004 and a nozzle inlet 1006 . Nozzle outlet 1004 may be configured to supply cleaning fluid over semiconductor die 902 and nozzle inlet 1006 may be configured to draw cleaning fluid and any suspended contaminant particles from semiconductor die 902 . In some embodiments, the cleaning fluid can be water, such as deionized water (DI water), or a solvent, such as alcohols, esters, or ketones.

In some embodiments, nozzle outlet 1004 and nozzle inlet 1006 may be configured as shown in FIG. 10 such that nozzle outlet 1004 is centrally located and nozzle inlet 1006 is positioned on an outer portion of nozzle 1002, proximate to the associated semiconductor die. Around 902. Nozzle outlet 1004 may supply cleaning fluid over semiconductor die 902 such that cleaning fluid may flow from a central region of semiconductor die 902 onto top surface 1014 of semiconductor die 902 according to arrow 1008 and pass near the periphery of semiconductor die 902 The nozzle inlet 1006 returns to the nozzle 1002. Cleaning fluid may also flow into channels 904 between semiconductor die 902 . In other embodiments, nozzle outlet 1004 and nozzle inlet 1006 may be configured as depicted above in FIG. The cleaning fluid can capture the contaminant particles 906 from the top surfaces 1014 of the semiconductor die 902 and/or the channels 904 between the semiconductor die 902 and suspend the contaminant particles 906 within the cleaning fluid such that when the fluid passes through the nozzle inlet 1006 Contaminant particles 906 may be removed by the cleaning fluid while flowing into nozzle 1002 .

As described above, nozzle 1002 may be configured such that substantially all of the cleaning fluid supplied by nozzle outlet 1004 is removed by nozzle inlet 1006 . In some embodiments, the flow between nozzle outlet 1004 and nozzle inlet 1006 can be balanced by adjusting the fluid pressure in nozzle outlet 1004 and the vacuum pressure in nozzle inlet 1006 . In some embodiments, nozzle inlet 1006 may be configured such that nozzle 1002 is capable of removing additional material, such as contaminant particles 906 suspended and/or trapped in the cleaning fluid.

In some embodiments, the cleaning fluid may be pulsed, such as by ultrasonic pulse delivery, to provide additional cleaning properties. As described above, ultrasonic pulse delivery can create cavitation bubbles in the cleaning fluid that can dislodge from the surface of the semiconductor die 902 and from small cavities or cracks (eg, the streets 904 between the semiconductor die 902) Pollutant particles 906 .

In some embodiments, adhesive 908 may be formulated to be removed by a cleaning fluid. For example, the adhesive 908 can be a water-soluble adhesive. In other embodiments, the adhesive 908 is soluble in certain solvents. When cleaning fluid is provided by nozzle 1002 onto semiconductor die 902 , the cleaning fluid may enter lanes 904 and contact adhesive 908 . The cleaning fluid may at least partially remove adhesive 908 from beneath semiconductor die 902 to form undercut 1010 . Undercut 1010 may be a region under semiconductor die 902 that is substantially free of adhesive 908 . Adhesive residue 1012 may remain in the central region of semiconductor die 902 . The amount of adhesive 908 removed from undercut 1010 may depend on the solubility of adhesive 908 with respect to the cleaning fluid and the amount of time nozzle 1002 is supplying cleaning fluid over semiconductor die 902 . In some cases, nozzle 1002 and associated tools may be configured to supply cleaning fluid over semiconductor die 902 for between about 1 second (s) and about 60 s, such as between about 1 s and about 30 s. As described above, removal of adhesive 908 from peripheral regions of semiconductor die 902 may substantially reduce the likelihood of cracking or cracking semiconductor die 902 .

FIG. 11 illustrates a pick-up process performed on a semiconductor die 902 . During the picking process, pick tool 1102 may be configured to pull semiconductor die 902 away from carrier material 910 . The pick-up tool 1102 may use suction or vacuum to secure the top surface 1014 of the semiconductor die 902 to the pick-up tool 1102 . After pick-up tool 1102 is secured to semiconductor die 902 , pick-up tool 1102 may apply a force in an upward direction away from carrier material 910 . When picking semiconductor die 902 from a rigid carrier material 910 (e.g., a carrier wafer), the pick-up tool 1102 may be the only tool that applies force in a direction away from the carrier material 910 (e.g., there is no Ejectors that apply supplementary force on the opposite side of 910). Adhesive remnant 1012 may peel semiconductor die 902 from carrier material 910 under the influence of vacuum and upward force generated by pick-up tool 1102 , for example by breaking, shearing or tearing adhesive remnant 1012 .

Carrier material 910 may be held by platform tool 1104 configured to resist the upward force generated by pick tool 1102 so that when pick tool 1102 lifts semiconductor die 902 away from carrier material 910, carrier material 910 remains in place . The platform tool can be configured to couple to or attract the bottom surface 1106 of the carrier material 910, such as by suction or vacuum. Bottom surface 1106 of carrier material 910 may be the surface of the carrier material opposite adhesive 908 and/or semiconductor die 902 .

FIG. 12 shows a front view of platform tool 1104 . Platform tool 1104 may include tool face 1202 configured to interface with the bottom surface of carrier material 910 . The tool face 1202 can be configured to lie flat against the bottom surface of the carrier material 910 such that the tool face 1202 resides in a plane proximate to and substantially parallel to the bottom surface.

Tool face 1202 may include a plurality of vacuum ports 1204 . Vacuum port 1204 may be configured to enable a vacuum source to generate vacuum or suction at tool face 1202 . As the number of vacuum ports 1204 in tool face 1202 increases, the vacuum force generated at tool face 1202 can increase. In some embodiments, vacuum port 1204 may be a hole or channel in tool face 1202 . In some embodiments, the vacuum ports 1204 may be configured in concentric rings on the tool face 1202 of the platform tool 1104 . For example, the vacuum ports 1204 may be arranged between about four concentric rings and about ten concentric rings, such as between about five concentric rings and about eight concentric rings, or about six concentric rings. In some embodiments, the concentric rings may be a series of holes forming each concentric ring. In other embodiments, the concentric rings may each be a channel forming an associated concentric ring.

In some embodiments, platform tool 1104 may be formed from a porous material, such as a porous ceramic material. A vacuum source may generate vacuum or suction at the tool face 1202 through the pores in the porous material. Thus, the suction force of the platform tool 1104 can be increased if the material of the platform tool 1104 is more porous. Increasing the suction force of the platform tool 1104 may enable the pick tool 1102 to utilize greater suction force. As described above, when picking up the semiconductor die 902 from the rigid carrier material 910, the pick tool 1102 may require a high suction force without the aid of an ejector supplying supplementary force from the opposite side of the carrier material 910 to pick up the semiconductor die 902 .

FIG. 13 illustrates an adhesive stripping process for a semiconductor die 902 . In some embodiments, the adhesive 908 between the semiconductor die 902 and the carrier material 910 can be peeled off by a separate process. For example, adhesive 908 may be configured to thermally peel (eg, peel or decompose when exposed to heat). Following the cleaning process depicted in FIG. 5 or FIG. 10 , heating device 1302 may be positioned to heat the area around semiconductor die 902 . The heating device 1302 can heat the area under and around the semiconductor die 902 by means of a beam 1304 such as a laser beam. Beam 1304 may impinge on top surface 1014 of semiconductor die 902 , thereby heating semiconductor die 902 until adhesive 908 between semiconductor die 902 and carrier material 910 is substantially detached or decomposed.

In some embodiments, heating device 1302 may be positioned to heat adhesive 908 through carrier material 910 . For example, the heating device 1302 can be arranged on the side of the carrier material 910 opposite the semiconductor die 902, so that the beam 1304 can be impinged on the side of the carrier material 910 opposite the semiconductor die 902, thereby heating the carrier material Adhesive 908 on the rear side of 910. Heating the adhesive 908 by the carrier material 910 may enable the adhesive stripping process to overlap or be performed at least partially concurrently with another process that interfaces with the top surface 1014 of the semiconductor die 902 to increase throughput. For example, an adhesive stripping process may be performed by the carrier material 910 during the cleaning process of FIG. 5 or 10 and/or during the picking process of FIG. 6 or 11 .

After the adhesive 908 is peeled off, the adhesive 908 may provide little resistance during the pick-up process of FIG. 6 or FIG. 11 . Thus, the thermal release adhesive 908 can substantially reduce the number of cracked or cracked semiconductor die 902 during the pick-up process.

After picking up semiconductor die 902 from carrier material 910 in the process depicted in FIG. 11 , the rear side of semiconductor die 902 may be cleaned in substantially the same manner as depicted in FIG. 7 . For example, pick-up tool 1102 may configure semiconductor die 902 such that the backside of semiconductor die 902 is exposed to a nozzle, such as nozzle 704, configured to supply a cleaning fluid on the surface behind semiconductor die 902 and to clean it from the semiconductor die. The surface is then pumped 906 of the cleaning fluid and any suspended contaminant particles 902 .

Some embodiments of the invention may include an apparatus for processing microelectronic devices. The apparatus may comprise at least one nozzle and a pick-up arm. The at least one nozzle can include a fluid outlet port configured and positionable to supply fluid on the surface of the microelectronic device. The at least one nozzle can further include a suction port configured to receive a supply of fluid from the surface of the microelectronic device. The pick arm can include a pick surface configured and positionable to receive the microelectronic device on the pick surface by applying a vacuum to the surface.

Other embodiments of the invention may include an apparatus for processing microelectronic devices. The equipment may include cleaning equipment and picking equipment. The cleaning apparatus can include a plurality of nozzles configured and positionable to supply cleaning fluid to surfaces of a plurality of semiconductor dies and simultaneously suck the cleaning fluid from the surfaces. The cleaning device may further include a cleaning fluid reservoir in selective communication with the plurality of nozzles. The cleaning apparatus can also include a vacuum source configured to draw the cleaning fluid through the plurality of nozzles. The pick-up apparatus may include a pick-up head that may be positioned proximate to the semiconductor die after the cleaning fluid has been supplied and aspirated from the semiconductor die. The pick-up apparatus may further include a vacuum source in selective communication with the pick-up head to attract the cleaned semiconductor die to the pick-up head.

Figure 14 shows a schematic diagram of a tool used in the picking process. As shown in FIG. 14 , a wafer singulated into a plurality of individual semiconductor die 402 by a dicing process is supported on and bonded to a carrier material 412 . As described above, the carrier material 412 may support the semiconductor wafer during the dicing operation that separates the individual semiconductor die 402 . A similar tool may be used to pick up semiconductor die 902 from carrier material 910 as shown in FIGS. 9-12 .

The tool may include a cleaning device 1410 and a picking device 1426 . Cleaning device 1410 and picking device 1426 may be controlled by controller 1408 . Controller 1408 can be configured to store and execute instructions via processor 1404 and memory 1406 . The controller 1408 can be configured to position the cleaning apparatus 1410 and the picking apparatus 1426 relative to the semiconductor die 402 and to position the cleaning apparatus and the picking apparatus relative to each other. For example, the controller 1408 can be configured to position the cleaning device 1410 immediately in front of the picker device 1426 to one or more semiconductor die 402 such that the cleaning device 1410 can clean the semiconductor die 402, followed by the picker device 1426 immediately Semiconductor die 402 is picked up from carrier material 412 .

Each of the cleaning device 1410 and the picking device 1426 may include an optical sensor system 1402 configured to optically determine the relative position of the respective cleaning device 1410 and/or picking device 1426 to the semiconductor wafer. The position of grain 402. Controller 1408 may use optical sensor system 1402 to position cleaning apparatus 1410 and/or picking apparatus 1426 vertically above (e.g., aligned in the lateral X, Y plane and rotated about a vertical axis) a respective semiconductor die 402 alignment).

Cleaning apparatus 1410 may include an array of nozzles 1416 . Each nozzle 1416 in the array of nozzles 1416 may include an outlet 1418 and an inlet 1420 . Outlet 1418 may be operably coupled to fluid reservoir 1414 by fluid supply line 1424 . The fluid may be pressurized, such as by a pump or compressor, such that the fluid may pass under pressure through the fluid supply line 1424 and out the outlet 1418 . In some embodiments, fluid reservoir 1414 may be pressurized. For example, a pump or compressor may be positioned prior to fluid reservoir 1414 . Each of the inlets 1420 may be coupled to a vacuum source 1412 by a vacuum line 1422 . Vacuum source 1412 may be configured to generate vacuum or suction at nozzle 1416 through inlet 1420 .

As described above, cleaning apparatus 1410 may supply cleaning fluid over semiconductor die 402 for an extended period of time, eg, between 10 and 30 seconds (s), to clean semiconductor die 402 and dissolve at least a portion of adhesive 408 . The pick-up operation may be completed between about 0.5 s and about 2 s for each semiconductor die 402 . Therefore, to maintain throughput during the pick and stack process, cleaning apparatus 1410 may be configured to clean multiple semiconductor die 402 at a time. For example, the array of nozzles 1416 can include a plurality of nozzles 1416 positioned adjacent to one another such that the array of nozzles 1416 can clean a plurality of adjacent semiconductor die 402 substantially simultaneously. In some embodiments, nozzles 1416 may be moved between different semiconductor dies 402 while the cleaning process is in progress such that each nozzle 1416 in the array of nozzles 1416 may be positioned over each semiconductor die 402 for a certain period of time. superior. After the entire array of nozzles 1416 has passed a single semiconductor die 402, the combined period of semiconductor die 402 that has been supplied with cleaning fluid through different nozzles 1416 in the array of nozzles 1416 may add up to an extension of the portion used to dissolve the adhesive 408 time period. In some embodiments, the array of nozzles 1416 may remain substantially stationary, and the carrier material 412 may be moved beneath it to position the semiconductor die 402 relative to the nozzles 1416 .

Picking equipment 1426 may include a picking tool 1428 . Picking tool 1428 may be configured to pick each individual semiconductor die 402 from carrier material 412 . The controller 1408 can be configured to position the picking device 1426 to pick the semiconductor die 402 adjacent to the nozzles 1416 in the array of nozzles 1416 . For example, the controller 1408 may position the pickup tool 1428 on the semiconductor die 402 immediately after the last nozzle 1416 in the array of nozzles 1416 passes the semiconductor die 402 . In some embodiments, the controller 1408 may be configured to position the carrier material 412 relative to the picking apparatus 1426 to position each semiconductor die 402 to be picked directly under the picking tool 1428 . The pick tool 1428 may include a pick arm 1430 having a pick head 1432 . The pick head 1432 may include a vacuum port 1438 that provides suction at the tool face 1434 of the pick head 1432 . Vacuum port 1438 may be coupled to a vacuum source 1440 configured to generate suction or vacuum through vacuum port 1438 .

Once aligned on the semiconductor die 402, the pick head 1432 can be vertically lowered rapidly until a predetermined pre-programmed standoff distance is reached between the tool face 1434 of the pick head 1432 and the top surface 510 of the semiconductor die 402, for example at Between about 100 μm and about 500 μm, thereafter, the travel of the pickup head 1432 slows down considerably, enabling a “soft touch” travel to make contact on the top surface 510 . Between the time the pick head 1432 slows down and makes contact with the top surface 510, the ejector 1436 can move upwardly against the carrier material 412, moving upwardly in synchronization with the pick head 1432, and can present the semiconductor die 402 to the tool face 1434. Vacuum ports 1438 in tool face 1434 can actively pull semiconductor die 402 to tool face 1434 . Ideally, the pick head 1432 and the ejector 1436 can move substantially in unison to minimize (ie, substantially eliminate) contact forces between the tool face 1434 and the ejector 1436 .

Pickup arm 1430 may include one or more pivots 1442 . Pivot 1442 may be configured to enable pick arm 1430 to move pick head 1432 and any attached semiconductor die 402 to another location, for example, for cleaning rear surface 702 of semiconductor die 402, as shown in FIG. As shown, or used to transfer the semiconductor die 402 to another tool, such as a bond head.

Some embodiments of the invention may include a method of processing microelectronic device components. The method can include supplying a fluid over a portion of a surface of the semiconductor die. The method can further include pumping the fluid from another portion of the surface of the semiconductor die. The method may also include lifting the semiconductor die from a supporting member after supplying and pumping the fluid. The method can further include supplying the fluid over a portion of the opposing surface of the semiconductor die. The method may also include pumping the fluid from another portion of the opposing surface of the semiconductor die. The method may further include positioning the semiconductor die on another microelectronic device component.

FIG. 15 shows a flowchart representing a method 1500 of cleaning a semiconductor die. Reference is also made to FIGS. 4 to 14 . In act 1502 , the semiconductor wafer may be diced, thereby separating the semiconductor wafer into a plurality of individual semiconductor die 402 , 902 . A plurality of individual semiconductor die 402, 902 may remain coupled to a carrier material 412, 910, such as a carrier wafer or dicing tape. The carrier material 412 , 910 may maintain the relative position between each of the semiconductor dies 402 , 902 such that the semiconductor dies 402 , 902 remain in substantially the same position after being cut in act 1502 .

While held in place by the carrier material 412, 910, the top surfaces of the individual semiconductor die 402, 902, which may be active surfaces, may be cleaned. Cleaning the active surface of the semiconductor die 402, 902 can substantially remove any contaminant particles that may be present on the semiconductor die 402, 902, such as dust particles, silicon particles, polymer residue particles, and the like. In some cases, contaminant particles may be generated during the dicing process, and/or may fall from adjacent semiconductor dies during the pick-up process. In act 1504, contaminant particles may be cleaned from the active surface of the semiconductor die 402, 902 by supplying a fluid over the active surface. As described above, the fluid may be a cleaning fluid, such as DI water or a solvent. In some embodiments, the fluid may be accelerated through a nozzle such that the fluid may impact the active surface of the semiconductor die 402 , 902 with greater force to dislodge contaminant particles from the active surface of the semiconductor die 402 , 902 . In some embodiments, the fluid can be pulsed, such as ultrasonic pulses, which can induce cavitation and dislodge more contaminant particles from the active surface of the semiconductor die 402 , 902 .

In act 1506, the fluid may be wicked from the active surface of the semiconductor die 402,902. Act 1504 of supplying fluid may be performed substantially simultaneously (eg, simultaneously) with act 1506 of pumping fluid. For example, when fluid is introduced in act 1504, the same fluid can be pumped in act 1506. Fluid may be supplied over the semiconductor die 402, 902 in a first location and pumped from a second location such that the fluid may flow from the first location to the second location over the active surface of the semiconductor die 402, 902. The removed contaminant particles may be substantially suspended in the fluid such that when the fluid is sucked from the active surface of the semiconductor die 402, 902 in act 1506, the suspended contaminant particles may also be drawn with the fluid, thereby removing Contaminant particles are removed from the active surface of the semiconductor die.

In some cases, the fluid may flow over the active surface of the semiconductor die 402 , 902 and into the lanes between the semiconductor die 402 , 902 before being removed by suction in act 1506 . Thus, any contaminant particles in the channel are also substantially removed by the fluid. Removing the contaminant particles in the lane can substantially reduce the number of contaminant particles introduced to adjacent semiconductor die 402 , 902 when the associated semiconductor die 402 , 902 is removed or picked up in act 1508 .

In act 1508, the semiconductor die 402, 902 may be lifted from the carrier material by a pick head configured to secure the semiconductor die 402, 902 to the pick head by suction. The suction may be sufficient to peel off any remaining adhesive, for example by breaking or tearing the adhesive.

After lifting or picking up the semiconductor die 402 , 902 in act 1508 , the rear surface of the semiconductor die 402 , 902 may be cleaned with a cleaning fluid in acts 1510 and 1512 . In some embodiments, the pickup head may invert the semiconductor die 402, 902 such that the back surface faces the nozzle in a substantially upward direction. In other embodiments, the pick-up head may move the semiconductor die 402, 902 over the nozzle such that the rear surface remains in a substantially downward direction with the nozzle facing upward toward the rear surface. In other embodiments, the pickup head may position the semiconductor die 402, 902 at an angle to match the position of the nozzle. In some embodiments, the nozzle is movable to face the rear surface of the semiconductor die 402 , 902 .

Cleaning the surface of the semiconductor die 402 , 902 can substantially remove any contaminant particles that may exist on the semiconductor die 402 , 902 , such as dust particles, silicon particles, polymer residue particles, and the like. As described above, contaminant particles may be generated during the dicing process, and/or may fall from adjacent semiconductor die 402, 902 during the pick-up process. In some cases, the contaminant particles may be residual particles of the adhesive present on the rear surface or particles associated with the adhesive. In act 1510, contaminant particles may be cleaned from the rear surface of the semiconductor die 402, 902 by supplying a fluid on the rear surface. The fluid can be a cleaning fluid such as DI water or solvent. In some embodiments, the fluid may be accelerated through the nozzle so that the fluid may impact the rear surface of the semiconductor die 402, 902 with a relatively high force configured to dislodge contaminant particles from the rear surface of the semiconductor die 402, 902 . In some embodiments, the fluid may be pulsed, such as ultrasonic pulses, which may induce cavitation and dislodge more contaminant particles from the surface behind the semiconductor die 402 , 902 .

In act 1512 , the fluid may be blottered from the rear surface of the semiconductor die 402 , 902 . Act 1510 of supplying fluid may be performed substantially simultaneously (eg, simultaneously) with act 1512 of pumping fluid. For example, when fluid is introduced in act 1510, the same fluid can be pumped in act 1512. The fluid may be supplied on the surface behind the semiconductor die 402, 902 in a first location and aspirated from the second location such that the fluid may flow from the first location to the second location on the surface behind the semiconductor die 402, 902 . The removed contaminant particles may be substantially suspended in the fluid such that when the fluid is sucked from the surface behind the semiconductor die 402, 902 in act 1512, the suspended contaminant particles may also be drawn with the fluid, thereby removing the contaminants. The particle particles are removed from the surface of the semiconductor die 402,902.

After both sides of the semiconductor die 402, 902 (e.g., the active surface and the back surface) are cleaned and substantially free of contaminant particles, in act 1514, the semiconductor die 402, 902 may be stacked on, for example, the semiconductor die, wafer or another microelectronic device on another substrate. For example, a pickup head may transfer the semiconductor die 402 , 902 to another tool, such as a bond head configured to stack the semiconductor die 402 , 902 . In some embodiments, the pickup head can transfer the semiconductor die 402, 902 directly onto another semiconductor device. The stacked semiconductor die 402, 902 and/or the microelectronic device may be bonded together to form a stacked microelectronic device. The semiconductor die 402, 902 and/or another microelectronic device may be stacked and bonded together in another process or series of process steps and/or techniques, such as near-zero bond wire or hybrid bonding.

Some embodiments of the invention may include a method of processing a semiconductor device. The method may include removing at least a portion of the adhesive between the semiconductor die and the support member. The method may further include picking up the semiconductor die from the support member with a pick-up tool by applying a vacuum to one side of the semiconductor die and the support member, and lifting the semiconductor die with the pick-up tool. The method may also include transferring the semiconductor die to another location using the pick tool.

FIG. 16 shows a flowchart representing a method 1600 of processing a semiconductor die. Reference is also made to FIGS. 4-14 . In act 1602 , the semiconductor wafer may be secured to a support element, such as carrier material 412 , 910 . For example, the wafer may be secured to the carrier material 412 , 910 by an adhesive 408 , 908 . After securing the wafer to the support element in act 1602 , in act 1604 the wafer may be separated into individual semiconductor die 402 , 902 . As described above, the wafers may be separated by a dicing process such as sawing, laser dicing (eg, stealth dicing), or plasma dicing.

After separating the wafer into individual semiconductor dies 402 , 902 in act 1604 , at least a portion of the adhesive 408 , 908 between the individual semiconductor dies 402 , 902 may be removed in act 1606 . In some embodiments, the adhesive 408, 908 is soluble in, for example, a water-soluble or solvent-soluble cleaning fluid, such that the cleaning of the semiconductor die 402, 902 can simultaneously serve to dissolve the adhesive 408, 908 that the cleaning fluid contacts. 908 at least a portion. As described above, a cleaning fluid may be supplied for an extended period of time on the respective semiconductor die 402 , 902 to dissolve larger quantities of the adhesive 408 , 908 . In some embodiments, the adhesive 408, 908 may be configured to thermally peel (eg, peel when heated). The semiconductor die 402 , 902 may be heated to peel off the adhesive 408 , 908 , for example, using a laser or other heating means.

After removing at least a portion of the adhesive 408 , 908 in act 1606 , in act 1608 the pick tool 602 , 1102 , 1428 may pick or lift the semiconductor die 402 , 902 from the support member. As described above, the pick-up tool 602 , 1102 , 1428 may contact the active or top surface of the semiconductor die 402 , 902 . The pick tool 602 , 1102 , 1428 may be secured to the semiconductor die 402 , 902 using suction through vacuum ports in the pick tool 602 , 1102 , 1428 . The suction may be sufficient to overcome, break or tear any adhesive 408 , 908 remaining after removing the portion of adhesive 408 , 908 in act 1606 . The pick tool 602, 1102, 1428 may remove the semiconductor die 402, 902 from the support member by removing, breaking or tearing the remaining adhesive and lifting the semiconductor die 402, 902 away from the support member.

After picking or lifting the semiconductor die 402, 902 from the support member in act 1608, in act 1610, the semiconductor die 402, 902 can be stacked on another microelectronic device (e.g., other semiconductor die, wafer, or other microelectronic device). electronic device components). For example, the pick-up tool 602, 1102, 1428 can transfer the semiconductor die 402, 902 to another tool, such as a bond head that can secure the semiconductor die 402, 902 to another microelectronic device. In some embodiments, the pick-up tool 602, 1102, 1428 may transfer the semiconductor die 402, 902 directly to another microelectronic device. Semiconductor die 402, 902 and/or other microelectronic device components may be stacked and bonded together in another process or series of process steps and/or techniques, such as near-zero bond wire or hybrid bonding.

Non-limiting examples of the invention may include: Embodiment 1: A method of processing a microelectronic device component comprising: supplying a fluid on a portion of a surface of a semiconductor die; pumping the fluid from another portion of the surface of the semiconductor die; The support element lifts the semiconductor die; supplies the fluid on a portion of an opposing surface of the semiconductor die; suctions the fluid from another portion of the opposing surface of the semiconductor die; and positions the semiconductor die on another on microelectronic device components. Embodiment 2: The method of embodiment 1, further comprising pulsing the fluid while supplying the fluid. Embodiment 3: The method of any one of embodiments 1 or 2, wherein pumping the fluid from another portion of the surface of the semiconductor die comprises removing and supplying the fluid from the other portion of the surface of the semiconductor die to the semiconductor die substantially the same amount of fluid as that portion of the particle surface. Embodiment 4: The method of any one of embodiments 1 to 3, wherein pumping the fluid from another portion of the opposing surface comprises removing and supplying to the semiconductor from the other portion of the opposing surface of the semiconductor die The portions of the opposing surfaces of the grains have substantially the same amount of fluid. Embodiment 5: The method of any one of Embodiments 1-4, further comprising flowing the fluid into a channel proximate to the outer perimeter of the semiconductor die. Embodiment 6: The method of any one of embodiments 1 to 5, further comprising contacting the adhesive between the opposing surface of the semiconductor die and the support member with the fluid flowing into the channel, and utilizing the The fluid dissolves at least a portion of the adhesive between the support element and the semiconductor die. Embodiment 7: The method of Embodiment 6, further comprising dissolving the at least a portion of the adhesive before lifting the semiconductor die. Embodiment 8: The method of any one of embodiments 1-7, wherein the fluid comprises deionized water or a solvent. Embodiment 9: A method comprising: removing at least a portion of an adhesive between a semiconductor die and a support member; A component picks up the semiconductor die and lifts the semiconductor die with the pick tool; and transfers the semiconductor die to another location with the pick tool. Embodiment 10: the method of embodiment 9, wherein the adhesive comprises a water-soluble adhesive. Embodiment 11: The method of any one of embodiments 9 or 10, wherein removing the at least the portion of the adhesive comprises flowing a fluid to a region proximate to the adhesive between the semiconductor die and the support member medium to at least degrade the adhesive. Embodiment 12: The method of Embodiment 11, further comprising flowing the fluid into the region for a period of between about 1 second (s) and about 30 s. Embodiment 13: The method of any one of embodiments 9-12, wherein the adhesive comprises a thermally releasable adhesive, and removing the at least the portion of the adhesive comprises heating the adhesive. Embodiment 14: The method of Embodiment 13, wherein heating the adhesive comprises heating the semiconductor die with a laser. Embodiment 15: The method of any of Embodiments 13 or 14, wherein heating the adhesive comprises heating the support member with a laser. Embodiment 16: An apparatus for processing a microelectronic device, the apparatus comprising: at least one nozzle including a fluid outlet port and a suction port, the fluid outlet port configured and positionable to be positioned on the microelectronic device A fluid is supplied on the surface of the microelectronic device, the suction port is configured to receive the supplied fluid from the surface of the microelectronic device; and a pickup arm having a pickup surface configured and positionable by the A vacuum is applied to the surface to receive the microelectronic device on the pick-up surface. Embodiment 17: The apparatus of Embodiment 16, wherein the at least one nozzle comprises a second nozzle comprising: a second fluid outlet port configured and positionable to be received by the microelectronic device at A supply of fluid on the other surface of the microelectronic device opposite the surface while on the pickup arm; and a second suction port configured to receive the supply of fluid from the other surface of the microelectronic device fluid. Embodiment 18: The apparatus of any of Embodiments 16 or 17, wherein the fluid outlet port is positioned in a central region of the nozzle and the suction port is positioned in a peripheral region of the nozzle. Embodiment 19: The apparatus of any of Embodiments 16 to 18, wherein the suction port is positioned in a central region of the nozzle and the fluid outlet port is positioned in a peripheral region of the nozzle. Embodiment 20: An apparatus for processing microelectronic devices comprising a cleaning apparatus and a pick-up apparatus, the cleaning apparatus comprising: a plurality of nozzles configured and positionable to supply cleaning fluid to surfaces of a plurality of semiconductor dies and simultaneously suction the cleaning fluid from the surfaces; a cleaning fluid reservoir in selective communication with the plurality of nozzles; and a vacuum source configured to suck the cleaning fluid through the plurality of nozzles; the pick-up Apparatus comprising: a pick-up head positionable in proximity to semiconductor die after the cleaning fluid has been supplied and drawn from the semiconductor die; and a vacuum source in selective communication with the pick-up head for cleaning A semiconductor die is attracted to the pickup head.

Embodiments of the present invention can reduce the number of failures of stacked microelectronic devices. For example, embodiments of the invention can reduce the number of contaminant particles present between adjacent microelectronic devices in a stack of microelectronic devices. Reducing the number of contaminant particles between adjacent microelectronic device components in a microelectronic device stack reduces the number of damaged microelectronic devices in the microelectronic device stack. Reducing the number of contaminant particles between adjacent microelectronic device components can also substantially prevent electrical shorts or electrical resistance due to intervening contaminant particles. Damaged (eg, cracking, micro-cracking) microelectronic devices, electrical shorts, and electrical resistance due to the introduction of intervening contaminant particles can render entire stacks of associated microelectronic devices ineffective. Accordingly, reducing the number of contaminant particles present between adjacent microelectronic devices of a microelectronic device stack can substantially reduce the number of microelectronic device stacks that are rendered useless or cracked during the assembly process.

Embodiments of the present invention may also reduce the number of damaged semiconductor dies during the pick-up process. Reducing the number of damaged semiconductor devices during the pick-up process can increase the yield of semiconductor die per wafer by reducing or eliminating the number of damaged semiconductor die per wafer.

Increasing the yield of microelectronic devices by reducing the number of damaged semiconductor devices or stacks of microelectronic devices that become useless can increase the production yield of microelectronic devices, even if the pick and place process is slightly slowed down. Increased yields can result in greater profitability or reduced costs in the production of associated microelectronic devices. The microelectronic device can be included in many different types of electronic devices, such as personal electronics (such as mobile devices, phones, tablets, etc.), computers (such as personal computers, laptops, etc.), etc. . Reducing the cost of producing microelectronic devices can in turn reduce the cost of producing associated electronic devices.

The embodiments of the present invention described above and illustrated in the accompanying drawings do not limit the scope of the present invention, because these embodiments are only examples of embodiments of the present invention, and the present invention is governed by the appended claims and their legal equivalents. thing defined. Any equivalent embodiments are intended to be within the scope of this invention. Indeed, various modifications of the invention may become apparent to those skilled in the art from the description in addition to those shown and described herein, such as alternative suitable combinations of the described elements. Such modifications and embodiments are also intended to come within the scope of the appended claims and their legal equivalents.

100: Microelectronic Devices 102: Semiconductor Die 104: Dielectric film 106: TSV 108p: Conductive pillar 108s: Solder 108t: Terminal pad 202: Particles 302: Particles 304: part 402: Semiconductor Die 404: Road 406: Pollutant Particles 408: Adhesives 410: backing 412: Carrier material 502: nozzle 504: Nozzle inlet 506: Nozzle outlet 508: Arrow 510: top surface 602: Pickup Tool 604: Undercut 606: Binder residue 608: Ejector 702: rear surface 704: nozzle 706: Nozzle outlet 708: Nozzle inlet 710: Arrow 802: nozzle 804: Nozzle outlet 806: Nozzle inlet 808: Arrow 902: Semiconductor Die 904: Tao 906: Pollutant Particles 908: Adhesives 910: Carrier material 1002: nozzle 1004: Nozzle outlet 1006: Nozzle inlet 1008: Arrow 1010: Undercut 1012: Adhesive residue 1014: top surface 1102: Pickup Tool 1104: Platform Tools 1106: Bottom surface 1202: tool face 1204: Vacuum port 1302: Heating device 1304: Beam 1402: Optical Sensor System 1404: Processor 1406: memory 1408: Controller 1410: Cleaning Equipment 1412: Vacuum source 1414: Fluid Reservoir 1416: nozzle 1418: Export 1420: Entrance 1422: Vacuum line 1424: Fluid Supply Line 1426: Pickup Device 1428: Pickup Tool 1430: Pickup arm 1432: Pickup head 1434: Tool face 1436: Ejector 1438: Vacuum port 1440: Vacuum source 1442: Pivot 1500: method 1502: action 1504: action 1506: action 1508: action 1510: action 1512: action 1514: action 1600: Methods of Processing Semiconductor Die 1602: action 1604: action 1606: action 1608: action 1610: action

Although the specification concludes with claims that specifically point out and clearly claim embodiments of the invention, the advantages of the embodiments of the invention are more easily understood from the following description of embodiments of the invention when read in conjunction with the accompanying drawings. OK, in the attached picture: 1 shows a schematic diagram of a stacked microelectronic device; 2A and 2B are enlarged views of stacked microelectronic devices showing impaired electrical connections due to the presence of particulate contamination; 3A and 3B show electron microscope images of microelectronic devices showing damage caused by particulate contamination; 4 illustrates a cross-sectional view of a wafer of semiconductor dies after a dicing process according to an embodiment of the present invention; 5 illustrates a cross-sectional view of a wafer of semiconductor die during a cleaning process according to an embodiment of the present invention; 6 illustrates a cross-sectional view of a wafer of semiconductor die during a pick-up process according to an embodiment of the present invention; 7 illustrates a cross-sectional view of a semiconductor die after a pick-up process according to an embodiment of the present invention; Figure 8 illustrates a cross-sectional view of a nozzle according to an embodiment of the present invention; 9 illustrates a cross-sectional view of a wafer of semiconductor dies after a dicing process according to an embodiment of the present invention; 10 illustrates a cross-sectional view of a wafer of semiconductor die during a cleaning process according to an embodiment of the present invention; 11 illustrates a cross-sectional view of a wafer of semiconductor die during a pick-up process according to an embodiment of the present invention; Figure 12 illustrates a front view of a pick-up tool according to an embodiment of the present invention; 13 illustrates a cross-sectional view of a wafer of semiconductor die during an adhesive lift-off process, according to an embodiment of the present invention; 14 is a schematic diagram of a microelectronic device processing tool according to an embodiment of the present invention; 15 is a flowchart representation of a method of cleaning a semiconductor die according to an embodiment of the present invention; and 16 is a flowchart representation of a method of processing a semiconductor die in accordance with an embodiment of the present invention.

402: Semiconductor Die 404: Road 406: Pollutant Particles 408: Adhesives 410: backing 502: nozzle 504: Nozzle inlet 506: Nozzle outlet 508: Arrow 510: top surface

Claims (19)

A method of processing a microelectronic device component, comprising: supplying a fluid over a portion of a surface of a semiconductor die; pumping the fluid from another portion of the surface of the semiconductor die; after supplying and pumping the fluid from a The support element lifts the semiconductor die; supplies the fluid on a portion of one opposing surface of the semiconductor die; suctions the fluid from another portion of the opposing surface of the semiconductor die; and positions the semiconductor die on another on a microelectronic device component. The method of claim 1, further comprising pulsing the fluid while supplying the fluid. The method of claim 1, wherein pumping the fluid from another portion of the surface of the semiconductor die comprises removing from the other portion of the surface of the semiconductor die substantially the same amount as that supplied to the portion of the surface of the semiconductor die of fluid. The method of claim 1, wherein pumping the fluid from another portion of the opposing surface comprises removing and supplying substantially to the portion of the opposing surface of the semiconductor die from the other portion of the opposing surface of the semiconductor die above the same amount of fluid. The method of claim 1, further comprising flowing the fluid into a channel proximate to an outer periphery of the semiconductor die. The method according to any one of claims 1 to 5, further comprising contacting an adhesive between the opposing surface of the semiconductor die and the support member with the fluid flowing into the channel, and using the fluid to dissolve the At least a portion of an adhesive between the support element and the semiconductor die. The method of claim 6, further comprising dissolving the at least a portion of the adhesive before lifting the semiconductor die. The method according to any one of claims 1 to 5, wherein the fluid comprises deionized water or a solvent. A method for processing a semiconductor die, comprising: removing at least a portion of an adhesive between the semiconductor die and a support element; and the support member applies a vacuum to pick up the semiconductor die from the support member and lift the semiconductor die with the pick-up tool; by supplying a fluid over a portion of a second side of the semiconductor die and from the pumping the fluid to another portion of the second side of the semiconductor die to remove a remaining portion of the adhesive from the second side of the semiconductor die opposite the first side; and using the pick-up tool to The semiconductor die is transferred to another location. The method according to claim 9, wherein the adhesive comprises a water-soluble adhesive. The method of any one of claim 9 or 10, wherein at least the portion of the adhesive is removed Including flowing a fluid into a region proximate to the adhesive between the semiconductor die and the support member to degrade at least the adhesive. The method of claim 11, further comprising flowing the fluid into the region for a period of between about 1 second (s) and about 30 s. The method of claim 9, wherein the adhesive comprises a heat releasable adhesive, and removing the at least the portion of the adhesive comprises heating the adhesive. The method of claim 13, wherein heating the adhesive comprises heating the semiconductor die with a laser. The method of claim 13, wherein heating the adhesive comprises heating the support member with a laser. An apparatus for processing microelectronic devices comprising: at least one nozzle comprising: a fluid outlet port configured and positionable to supply a fluid on a surface of a microelectronic device; and a pump a suction port configured to receive the supplied fluid from the surface of the microelectronic device; a pick-up arm having a pick-up surface configured and positionable by applying a pick-up surface to the surface vacuum to receive the microelectronic device on the pick-up surface; and The at least one second nozzle, the second nozzle comprising: a second fluid outlet port configured and positionable between the microelectronic device and the pick-up arm when the microelectronic device is received on the pick-up arm A fluid is supplied on the opposite surface of the surface; and a second suction port configured to receive the supplied fluid from the other surface of the microelectronic device. The apparatus of claim 16, wherein the fluid outlet port is positioned in a central region of the nozzle, and the suction port is positioned in a peripheral region of the nozzle. The apparatus of claim 16 or 17, wherein the suction port is positioned in a central region of the nozzle and the fluid outlet port is positioned in a peripheral region of the nozzle. An apparatus for processing microelectronic devices comprising: a cleaning apparatus comprising: a plurality of nozzles configured and positionable to supply a cleaning fluid to and simultaneously from the surfaces of a plurality of semiconductor dies suction the cleaning fluid; a cleaning fluid reservoir (reservoir), which selectively communicates with the plurality of nozzles; and a vacuum source configured to suck the cleaning fluid through the plurality of nozzles; a pick-up device , comprising: a pick head positionable in proximity to the semiconductor die after the cleaning fluid has been supplied and drawn from the semiconductor die; and a vacuum source in selective communication with the pick head to Suction the cleaned semiconductor die attracting to the pickup head; wherein the pickup device and the cleaning device are configured to be positioned relative to each other on the plurality of semiconductor dies such that the cleaning device cleans the surfaces of the plurality of semiconductor dies, The pick-up device then immediately attracts the cleaned semiconductor die to the pick-up head.

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