TWI774805B - Wafer Processing Method - Google Patents

Abstract

[Problem] An object is to provide a wafer processing method for reducing wafer polishing defects. [Solution] The wafer processing method according to the embodiment of the present invention includes a predetermined value setting step of setting an appropriate inclination (θ) with respect to the rotation axis (92) of the chuck table (9) of the polishing unit (5) as a predetermined value and setting; grinding step, grinding the wafer (200) held on the chuck table (9) by the rough grinding unit and fine grinding unit; grinding preparation step, rotating the turntable and positioning the ground wafer (200) on the Below the grinding unit (5); the rotation axis adjustment step, the control device drives the inclination adjustment means, and adjusts the inclination ( θ) is adjusted to the above-mentioned prescribed value; and in the grinding step, the wafer (200) is ground by the grinding unit (5).

Description

Wafer Processing Method

The present invention relates to a wafer processing method for processing wafers.

In general, various wafer systems such as semiconductor wafers made of silicon crystals formed on the front surface of semiconductor elements or optical element wafers made of sapphire, SiC (silicon carbide), etc. that form optical elements, etc. After the grinding stone is ground and thinned (for example, refer to Patent Document 1), the back surface is ground. As a processing apparatus for processing such a wafer, there is known one that continuously processes a single wafer in the order of rough grinding, fine grinding, and grinding, and has a plurality of chuck tables that hold the wafers respectively, and a rotary table that is provided with a plurality of A chuck table; the grinding means for rough grinding are respectively arranged above the chuck table; the grinding means and the grinding means for fine grinding.

In such a processing apparatus, in order to suppress variation in thickness of the wafer after processing, the inclination of the rotation axis of the chuck table is adjusted for the grinding means for finish grinding. On the other hand, a plurality of chuck tables have individual differences in the height and shape of a member (base portion or porous portion) supporting each chuck table. Therefore, there is a situation in which the inclination of the rotation axis is different for each chuck table, as will be described later. On the other hand, conventionally, the inclination of the rotation axis of the chuck table is not adjusted in the polishing means for polishing that performs final processing.

The reasons are: (1) The polishing amount is a small amount of several μm; (2) Since the polishing pad is made of a softer material than the grinding wheel, the inclination of the rotation axis of the chuck table holding the wafer is maintained even for each chuck. The disc table is slightly different. When the polishing pad is pressed against the wafer for grinding, the polishing pad will be deformed and the wafer will be pressed for polishing; (3) Even if poor polishing occurs, the quality will not be affected.

[Prior Art Document] [Patent Document] [Patent Document 1] Japanese Patent Laid-Open No. 2013-119123.

THE PROBLEM TO BE SOLVED BY THE INVENTION However, in recent years, the material system of polishing pads has been diversified, and there are also polishing pads having hardness that cannot be deformed by the inclination of the rotation axis of the chuck table, as will be described later. When polishing using such a polishing pad, problems such as unprocessed areas that hinder the quality of the wafer processing surface and poor polishing such as scorch occur depending on the inclination of the rotation axis of the chuck table. In addition, even when the quality is not affected, there is a need to solve the unprocessed area and burnt of the processed surface due to poor appearance.

The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a wafer processing method for reducing wafer polishing defects.

[Technical Means for Solving the Problem] In order to solve the above-mentioned problems and achieve the object of the present invention, the present invention relates to a wafer processing method in which a wafer is thinned to a predetermined thickness by a processing apparatus, the processing apparatus including at least a chuck table capable of rotatably holding the wafer; grinding means for grinding the wafer; grinding means for grinding the wafer ground by the grinding means; a rotary table provided with a plurality of the chuck tables and rotatable; and a control unit, Each component of drive control is characterized in that: wherein, the chuck table at least includes: a holding surface for holding the wafer; a rotating shaft passing through the center of the holding surface; and an inclination adjustment means for adjusting the inclination of the rotating shaft The wafer processing method is provided with: a predetermined value setting step for setting an appropriate inclination relative to the rotation axis of the grinding means as a predetermined value; a grinding step for grinding the wafer held on the chuck table by the grinding means circle; grinding preparation step, rotating the turntable and positioning the wafer ground in the grinding step under the grinding means; rotating shaft adjusting step, the control part drives the inclination adjusting means, and positions the wafer in the grinding step The inclination of the rotation axis of the chuck table under the grinding means is adjusted to the predetermined value; and in the grinding step, the wafer is ground by the grinding means.

According to this configuration, since the predetermined value of the inclination of the rotation axis of the chuck table appropriate for the polishing means is set in advance, the inclination of the rotation axis of the chuck table can be adjusted before the start of polishing, and wafer polishing defects can be prevented. .

In addition, in the predetermined value setting step, the predetermined value of the inclination of the rotation axis is set in advance based on experiments for each type as described later: the type of the wafer to be polished and the polishing pad included in the polishing means. When the type of the wafer and the type of the polishing pad are selected, in the rotation axis adjustment step, the control unit can adjust the inclination of the rotation axis to a predetermined value corresponding to the type.

[Effects of the Invention] According to the present invention, since the predetermined value of the inclination of the rotation axis of the chuck table for the polishing means is set in advance, the inclination of the rotation axis of the chuck table can be adjusted before the start of polishing, and crystallinity can be prevented. The rounds are poorly ground.

The form (embodiment) for implementing this invention is demonstrated in detail, referring drawings. The present invention is not limited to those described in the following embodiments. In addition, the constituent elements described below include those that can be easily conceived by those with ordinary knowledge in the technical field, and are substantially the same. Furthermore, the constitutions described below can be appropriately combined. In addition, various omissions, substitutions, or changes in the configuration can be made without departing from the gist of the present invention.

The wafer processing method in the embodiment of the present invention will now be described based on the drawings. FIG. 1 is a perspective view of a wafer to be processed by a wafer processing method according to an embodiment of the present invention. FIG. 2 is a perspective view showing an example of the configuration of a grinding and polishing apparatus using the wafer processing method according to the embodiment of the present invention. 3 is a side view showing a polishing unit, a chuck table, and an inclination adjustment mechanism of the grinding and polishing apparatus shown in FIG. 2 . FIG. 4 is a plan view showing an example of arrangement of position adjustment units constituting the inclination adjustment mechanism shown in FIG. 3 . FIG. 5 is a conceptual diagram showing a state in which the chuck table is tilted with respect to the polishing unit.

The wafer processing method in the embodiment of the present invention is a processing method of grinding and polishing the back surface 201 of the wafer 200 shown in FIG. 1 , and is a method of thinning the wafer 200 to a predetermined precision thickness. The wafer 200 is a disk-shaped semiconductor wafer with silicon crystal as the base material or an optical element wafer with sapphire, SiC (silicon carbide), etc. as the base material; wherein, the wafer 200 is the wafer processing in the embodiment of the present invention. The processing object of the method. As shown in FIG. 1 , in the wafer 200 , elements 204 are formed in a plurality of regions divided by grid-shaped planned dividing lines 203 , and the grid-shaped planned dividing lines 203 are formed on the front surface 202 . As shown in FIG. 2 , in the state where the protective member 205 is adhered to the front surface 202 , the back surface 201 is ground by the grinding and polishing apparatus 1 , and after being thinned to a predetermined thickness, the back surface 201 is ground. The protective member 205 is formed in a disk shape having the same size as the wafer 200, and is made of a flexible synthetic resin.

As shown in FIG. 2 , a grinding and polishing apparatus 1 mainly includes: apparatus body 2, rough grinding unit (grinding means) 3, fine grinding unit (grinding means) 4, grinding unit (grinding means) 5, grinding unit moving mechanism 6, machining Liquid supply unit 7, four chuck tables 9 (9a to 9d) provided on turntable 8, for example, cassettes 11 and 12, positioning table 13, transfer arm 15, mechanical pickup 16, rotary cleaning device 17, and control Device (control unit) 100 .

The rough grinding unit 3 roughly grinds the back surface 201 of the wafer 200 by pressing the back surface 201 of the wafer 200 held on the chuck table 9 while rotating the rough grinding wheel 3b mounted on the lower end of the spindle 3a. Similarly, the fine grinding unit 4 presses the back surface 201 of the rough-ground wafer 200 while rotating the fine grinding wheel 4b mounted on the spindle 4a, thereby fine grinding the back surface 201 of the wafer 200 .

As shown in FIG. 3, the polishing unit 5 includes a polishing pad 5b attached to the lower end of the main shaft 5a through a polishing frame 5c. The polishing pad 5b rotates together with the spindle 5a around the rotating shaft 53 indicated by the single-dot chain line in FIG. The back surface 201 of the wafer 200 is polished; wherein, the rotation axis passes through the center of the polishing pad 5b. The polishing pad 5 b is deformed according to the shape of the wafer 200 to be polished, and the lower surface of the polishing pad 5 b contacts the back surface 201 of the wafer 200 to be the polishing surface of the back surface 201 .

As shown in FIG. 2, the polishing unit moving mechanism 6 can move the polishing unit 5 in the horizontal direction (the radial direction of the polishing pad 5b, which is the X-axis direction in FIG. 2) and the vertical direction (the axial direction of the main shaft 5a, which is the Z-axis direction in FIG. 2 ). axis direction) move. The machining liquid supply unit 7 selectively supplies a polishing liquid and a cleaning liquid to the back surface 201 of the ground wafer 200 during polishing. The machining fluid supply unit 7 connects the upper end portion of the polishing unit 5 through the machining fluid supply passage 72 , and supplies polishing fluid or cleaning fluid to the polishing unit 5 .

The turntable 8 is a disk-shaped table provided on the upper surface of the apparatus main body 2 , is rotatably provided in the horizontal direction, and is rotationally driven at a predetermined timing. On this turntable 8 , for example, four chuck tables 9 ( 9 a to 9 d ) are arranged at equal intervals with a phase angle of, for example, 90 degrees.

As shown in FIG. 3 , the chuck table 9 includes: a holding surface 91 for holding the front surface 202 side of the wafer 200 through a protective member 205; And the inclination adjustment mechanism (inclination adjustment means) 40 inclines the rotation shaft 92 with respect to the vertical direction. The chuck table 9 is a chuck table structure having a vacuum chuck on the holding surface 91 , and vacuum suctions and holds the wafer 200 placed on the holding surface 91 .

As shown in detail in FIG. 5 , the holding surface 91 has an outer peripheral portion 91B formed in a conical shape slightly lower than the center 91A. That is, the holding surface 91 is formed as a conical surface with the center 91A as a vertex, and is formed as an inclined surface having a slope descending from the center 91A toward the outer peripheral portion 91B as described later. The chuck table 9 holds the wafer 200 to be processed along the conical surface of the holding surface 91 . Incidentally, FIG. 5 shows the inclination of the conical surface of the holding surface 91 exaggeratedly, but the inclination of the conical surface of the holding surface 91 is actually a slight inclination that cannot be recognized by the naked eye.

The tilt adjustment mechanism 40 is attached to each chuck table 9 . The inclination adjustment mechanism 40 is for changing (adjusting) the inclination θ ( FIG. 5 ) with respect to the vertical direction (Z direction) of the rotation shaft 92 . As shown in FIG. 3 , the inclination adjustment mechanism 40 includes the support base 22 and the position adjustment unit 23 connected to the support base 22 . The support base 22 includes a support cylindrical portion 220 that rotatably supports the chuck table 9 through a bearing (not shown) and is formed in a cylindrical shape, and a flange portion 221 formed by expanding the diameter of the support cylindrical portion 220 . The inclination adjustment mechanism 40 adjusts the inclination θ of the rotating shaft 92 by adjusting the inclination of the flange portion 221 .

As shown in FIG. 4 , two or more position adjustment units 23 are provided at equal intervals along the arc of the flange portion 221 . In the embodiment of the present invention, the inclination adjustment mechanism 40 is provided with two position adjustment units 23 at intervals of 120 degrees and the fixing portion 23a for fixing the flange portion 221, but in the present invention, the position adjustment units 23 may be arranged as three more than one.

As shown in FIG. 3 , the position adjustment unit 23 includes: a cylindrical part 230 fixed to the turntable 8; a shaft 231 penetrating the cylindrical part 230; a driving part 232 connecting the lower end of the shaft 231; at the flange portion 221 . The drive unit 232 includes a motor 232a, a rotating shaft 231, and a speed reducer 232b, and is fixed to the turntable 8 at a reduced rotational speed of the shaft 231.

The fixing portion 233 is provided with an unillustrated internal thread screwed with an unillustrated external thread; wherein, the external thread is formed on the upper end portion of the shaft 231 . The position adjustment unit 23 adjusts the inclination θ of the rotation shaft 92 as described later: the motor 232a rotates the shaft 231 around the axis through the reduction gear 232b. Moreover, the motor 24 which rotates the chuck table 9 around the rotation shaft 92 is attached to the turntable 8 .

The chuck table 9 is rotationally driven by the motor 24 with the rotation shaft 92 as the center during grinding and polishing. Such a chuck table 9 is rotated by the rotation of the turntable 8 to move around in the order of the carry-in and carry-out area A, the rough grinding area B, the fine grinding area C, and the grinding area D as shown in FIG. 2 .

The cassettes 11 and 12 are receptacles for the wafers 200 having a plurality of slots. One of the cassettes 11 accommodates the wafers 200 before grinding and polishing, and the other cassette 12 accommodates the wafers 200 after grinding. The positioning stage 13 is a stage for temporarily placing the wafers 200 taken out from the cassettes 11 , as described later, and aligning the center positions thereof.

The transfer arm 15 is configured to be movable in the horizontal direction (Y-axis direction), to transfer the wafer 200 before grinding and polishing placed on the positioning table 13 , and to place the wafer on the chuck table 9 a positioned in the transfer-in/unload area A. . In addition, the transfer arm 15 also transfers the polished wafer 200 placed on the chuck table 9a, and places the wafer on the cleaning table of the rotary cleaning device 17;

The mechanical pickup 16 includes a wafer holding portion (for example, a U-shaped arm) 16A, and the wafer holding portion 16A sucks and holds the wafer 200 for transfer. Specifically, the mechanical pickup 16 transfers the wafer 200 before grinding and polishing from the cassette 11 to the positioning table 13 . In addition, the polished wafer 200 is also transferred from the spin cleaning device 17 to the cassette 12 . The rotary cleaning device 17 cleans the polished wafer 200 to remove contaminants such as grinding dust and grinding dust adhering to the ground and polished processing surface.

The control apparatus 100 controls the above-mentioned components which comprise the grinding-polishing apparatus 1, respectively. That is, the control device 100 causes the grinding and polishing device 1 to perform the grinding and polishing operation on the wafer 200 . The control device 100 is a computer that can execute a computer program. The control device 100 has: an arithmetic processing unit 101 having a microprocessor such as a CPU (central processing unit), a ROM (read only memory, read only memory) or a RAM (random access memory, random access) The memory part 102 of the memory), and the input/output interface device. The arithmetic processing unit 101 executes the computer program stored in the ROM on the RAM to generate control signals for controlling the grinding and polishing device 1 , and the generated control signals are output to the respective constituent elements of the grinding and polishing device 1 through the I/O device.

In addition, the memory unit 102 according to the embodiment of the present invention stores the predetermined value of the inclination θ relative to the rotation shaft 92 of the chuck table 9 of the polishing unit 5 in the set database 103 when polishing. Here, in the database 103, an appropriate predetermined value of the inclination θ is set for each type as described later: for example, the type (material or size) of the wafer 200 and the type of the polishing pad 5b (for example, the material or hardness of the polishing pad 5b) are set. , the presence or absence of abrasive grains in the polishing pad 5b or the type of abrasive grains) are combined respectively. This predetermined value is set by preparing a plurality of finely ground wafers 200 as described later, and performing an experiment in which the wafers 200 are polished while changing the inclination θ of the rotation axis 92 for each type of the wafers 200 in advance, and The state after grinding was observed respectively.

In addition, in the configuration in which a plurality (four) of chuck tables 9 ( 9 a to 9 d ) rotate together with the turntable 8 as in the embodiment of the present invention, individual differences between the chuck tables 9 a to 9 d also occur, which is preferable. For the above experiments, the actual machines (chuck stages 9 a to 9 d ) are performed, and the numbers of the chuck stages 9 a to 9 d are stored in the database 103 . In addition, polishing processing conditions for the wafer 200 (chemical mechanical polishing, defect removal processing, etc.) may be added to the database 103 . In this configuration, since the predetermined value of the inclination θ of the chuck table 9 is set in advance corresponding to each type, in the actual polishing step, the predetermined value corresponding to the type is selected to drive the position adjustment unit 23 of the chuck table 9, that is, Can. Therefore, even if the type of the wafer 200 to be polished or the polishing pad 5b is changed, an appropriate polishing process can be performed, and the occurrence of polishing defects can be prevented.

Next, the wafer processing method in the embodiment of the present invention will be described. FIG. 6 is a flowchart showing the steps of the wafer processing method. First, an appropriate inclination θ with respect to the rotation shaft 92 of the chuck table 9 of the polishing unit 5 is set as a predetermined value (step S1 , a predetermined value setting step). This predetermined value setting step is performed before the actual wafer 200 is processed. For example, the wafer 200 to be polished is made to exist in a variety of types depending on the material and size, and the polishing pad 5b is made to vary in the material and hardness, the presence or absence of abrasive grains, and the types of abrasive grains. species exist.

An operator produces a type in which a plurality of types (types) of wafers 200 and polishing pads 5 b are combined. Then, for each combination type, the plurality of wafers 200 held on the holding surface 91 of the chuck table 9 are polished while changing the inclination θ with respect to the rotation axis 92 of the chuck table 9 of the polishing unit 5 processing experiments. Then, the pros and cons of the processing state after polishing are judged, and the inclination θ that enables polishing in an appropriate (optimal) processing state is stored in the database 103 together with the type of combination of the wafer 200 and the polishing pad 5b.

This operation is only performed in advance according to the number of combinations of wafers and polishing pads used, and the appropriate (optimal) inclination θ is stored in the database 103 together with the combination type. Here, as in the grinding and polishing apparatus 1 used in the embodiment of the present invention, in a configuration in which a plurality of (four) chuck tables 9 ( 9 a to 9 d ) rotate together with the turntable 8 , the chuck table 9 a also occurs. Because of the individual differences of ∼9d, it is preferable that the above experiment is performed for each chuck stage 9a-9d, and is stored in the database 103 in accordance with the numbers of the chuck stages 9a-9d. In addition, in the case where a plurality of conditions for polishing the wafer 200 exist, it is preferable to add each condition (for example, chemical mechanical polishing, de-defective layer processing, etc.) to the database 103 .

The above-described predetermined value setting step is performed in advance, and grinding and polishing processing is performed based on the predetermined value set in the predetermined value setting step. When the grinding and polishing process is started, the type of the wafer 200 or the type of the polishing pad 5b provided in the polishing unit 5 is selected and registered; however, the wafer is the processing object.

Next, the wafer 200 is held on the holding surface 91 of the chuck table 9 (step S2 , holding step). The wafer 200 is held by the holding surface 91 of the chuck table 9 in the carry-in and carry-out area A of the turntable 8 with the protective member 205 attached to the front surface 202 side with the back surface 201 side facing upward.

Next, rough grinding and fine grinding are performed on the wafer 200 held on the chuck table 9 (step S3 , grinding step). The wafer 200 held on the chuck table 9 is moved to the rough grinding area B by the rotation of the turntable 8 . In this rough grinding area B, rough grinding is performed as described later: in the state of the rotary chuck table 9, the rough grinding wheel 3b of the rough grinding unit 3 is lowered while rotating, and the rotating rough grinding wheel 3b is brought into contact with the surface of the wafer 200. The back surface 201 is thinned to a predetermined thickness. After the rough grinding is completed, by further rotating the turntable 8 , the chuck table 9 holding the roughly ground wafer 200 is moved to the fine grinding area C by the rotation of the turntable 8 . In this fine grinding area C, the following fine grinding is performed: in the state of the rotary chuck table 9, the fine grinding wheel 4b of the fine grinding unit 4 is lowered while rotating, and the rotating fine grinding wheel 4b is brought into contact with the wafer 200. The back surface 201 is thinned to a predetermined precision thickness. In this case, the rotation axis 92 of the chuck table 9 is adjusted to a predetermined inclination according to the finishing process, and the finishing wheel 4b is constantly in contact with the rotation center of the back surface 201 of the wafer 200 .

Next, the chuck table 9 holding the finely ground wafer 200 is moved to the polishing area D by the rotation of the turntable 8 and positioned under the polishing unit 5 (step S4, polishing preparation step). Next, the inclination adjustment mechanism 40 is driven to adjust the inclination of the rotation shaft 92 of the chuck table 9 positioned below the polishing unit 5 to a predetermined value (step S5 , rotation shaft adjustment step). The arithmetic processing unit 101 of the control device 100 reads out a predetermined value of the inclination θ, which will be described later, from the database 103 of the memory unit 102, and adjusts the inclination θ of the rotating shaft 92 of the chuck table 9 to this predetermined value: corresponding to A type that combines the types of the wafer 200 and the polishing pad 5b registered at the start of processing. Thereby, the inclination θ of the rotation shaft 92 of the chuck table 9 can be adjusted to an appropriate inclination as described later according to the type of the combined wafer 200 and the polishing pad 5b. Here, the arithmetic processing unit 101 recognizes which of the four chuck tables 9 a to 9 d the chuck table 9 moving to the polishing area D is. Therefore, when the database 103 is also stored in accordance with the individual differences of the chuck tables 9 a to 9 d, the predetermined value corresponding to the inclination θ of the chuck tables 9 a to 9 d in the polishing area D is read. Thereby, the inclination θ of the rotation shaft 92 of the chuck table 9 can be adjusted to a more appropriate inclination in consideration of the individual differences of the chuck tables 9a to 9d.

Next, the wafer 200 is polished by the polishing unit 5 (step S6, polishing step). The chuck table 9 is rotated on the premise that the inclination θ of the rotation shaft 92 of the chuck table 9 is adjusted to a predetermined value. In this state, the polishing pad 5b of the polishing unit 5 is lowered while being rotated, and the rotating polishing pad 5b is brought into contact with the back surface 201 of the wafer 200 to perform polishing. In this case, since the machining fluid is supplied from the machining fluid supply unit 7 , the back surface 201 of the wafer 200 can be subjected to chemical mechanical polishing (CMP polishing) by the polishing pad 5 b and the machining fluid. In addition, dry polishing in which grinding is performed without using a working fluid can also be performed.

As described above, since the wafer processing method according to the embodiment of the present invention includes the following steps, by setting a predetermined value of the inclination θ of the rotation axis 92 of the chuck table 9 with respect to the polishing unit 5 in advance, it is possible to start the polishing before starting the polishing. Adjusting the inclination of the rotating shaft 92 of the chuck table 9 to prevent poor polishing of the wafer 200: Predetermined value setting step S1, the appropriate inclination θ with respect to the rotating shaft 92 of the chuck table 9 of the polishing unit 5 is specified as The grinding step S3 is to grind the wafer 200 held on the chuck table 9 by the rough grinding unit 3 and the fine grinding unit 4; The wafer 200 is positioned under the grinding unit 5 ; the rotation axis adjustment step S5 enables the control device 100 to drive the inclination adjustment mechanism 40 to adjust the inclination θ of the rotation axis 92 of the chuck table 9 located under the grinding unit 5 Adjust to the above-mentioned predetermined value; and in the polishing step S6 , the wafer 200 is polished by the polishing unit 5 .

In addition, according to the embodiment of the present invention, in the predetermined value setting step S1, the predetermined value of the inclination θ of the rotating shaft 92 of the chuck table 9 is set in advance based on experiments for each type as described later. The type of the wafer 200 and the type of the polishing pad 5b provided in the polishing unit 5 are respectively combined; when the type of the wafer 200 and the type of the polishing pad 5b are selected, in the rotation axis adjustment step S5, because the control device 100 is Since the inclination θ of the rotating shaft 92 is adjusted according to the predetermined value of the type, even if the wafer 200 or the polishing pad 5b is changed, by adjusting the inclination θ of the rotating shaft 92 to an appropriate degree, the wafer 200 can be well held. grinding state.

Incidentally, according to the processing method in the above-described embodiment of the present invention, the following processing apparatus can be obtained. (Supplementary Note 1) A processing apparatus including at least: a chuck table for rotatably holding a wafer; a polishing means for polishing the wafer held on the chuck table; and a control unit for driving and controlling each component; The chuck table is provided with inclination adjustment means for adjusting the inclination of a rotating shaft passing through the center of the holding surface holding the wafer, and the control unit includes: Type The predetermined value of the inclination of the rotation axis that is set in advance based on experiments: the type of the wafer to be polished and the type of the polishing pad included in the polishing means are respectively combined; and the arithmetic processing unit selects the wafer. Depending on the type of the circle and the type of the polishing pad, the inclination adjusting means is driven to adjust the inclination of the rotating shaft of the chuck table below the polishing means to a predetermined value corresponding to the type.

The above-mentioned processing apparatus is the same as the processing method in the embodiment of the present invention. Since a predetermined value of the inclination θ of the rotating shaft 92 of the chuck table 9 with respect to the grinding unit 5 is set in advance, it can be appropriately adjusted before starting the grinding. The inclination of the rotating shaft 92 of the chuck table 9 can prevent the polishing failure of the wafer 200 .

Incidentally, the present invention is not limited to the above-described embodiments. That is, various changes can be made and implemented within a range not departing from the spirit of the present invention.

1‧‧‧grinding and grinding device (processing device) 2‧‧‧device body 3‧‧‧rough grinding unit (grinding means) 3a‧‧‧spindle 3b‧‧‧rough grinding wheel 4‧‧‧finishing grinding unit (grinding means ) 4a‧‧‧Spindle 4b‧‧‧Fine grinding wheel 5‧‧‧Lapping unit (grinding means) 5a‧‧‧Spindle 5b‧‧‧Polishing pad 5c‧‧‧Polishing frame 7‧‧‧Machining fluid supply unit 8‧ ‧‧Rotary table 9, 9a, 9b, 9c, 9d‧‧‧Chuck table 22‧‧‧Support table 23‧‧‧Position adjustment unit 23a‧‧‧Fixing part 24‧‧‧Motor 40‧‧‧Inclination adjustment Mechanism (Inclination Adjustment Means) 91‧‧‧Holding Surface 91A‧‧‧Center 91B‧‧‧Peripheral Part 92‧‧‧Rotating Shaft 100‧‧‧Control Device (Control Section) 101‧‧‧Calculation Processing Section 102‧‧ ‧Memory section 103‧‧‧Database 200‧‧‧Wafer 201‧‧‧Back surface 202‧‧‧Front surface 203‧‧‧Partitioning line 204‧‧‧Element 205‧‧‧Protective member

FIG. 1 is a perspective view of a wafer to be processed by a wafer processing method according to an embodiment of the present invention. FIG. 2 is a perspective view showing an example of the configuration of a grinding and polishing apparatus using the wafer processing method according to the embodiment of the present invention. 3 is a side view showing a polishing unit, a chuck table, and an inclination adjustment mechanism of the grinding and polishing apparatus shown in FIG. 2 . FIG. 4 is a plan view showing an example of arrangement of position adjustment units constituting the inclination adjustment mechanism shown in FIG. 3 . FIG. 5 is a conceptual diagram showing a state in which the chuck table is tilted with respect to the polishing unit. FIG. 6 is a flowchart showing the steps of the wafer processing method in the embodiment of the present invention.

5‧‧‧grinding unit (grinding means)

5a‧‧‧Spindle

5b‧‧‧Polishing pad

5c‧‧‧grinding frame

9‧‧‧Chuck table

53‧‧‧Rotary axis

91‧‧‧Keep Face

91A‧‧‧Center

91B‧‧‧Peripheral

92‧‧‧Rotary axis

200‧‧‧wafers

201‧‧‧Back

202‧‧‧Front

205‧‧‧Protective components

Z‧‧‧Z axis direction

θ‧‧‧Inclination

Claims (1)

A wafer processing method, wherein a wafer is thinned to a predetermined thickness by a processing device, the processing device is at least provided with: a chuck table for rotatably holding the wafer; a grinding means for grinding the wafer; A wafer ground by the grinding means; a rotary table provided with a plurality of the chuck tables so as to be rotatable; and a control unit for driving and controlling each constituent element; wherein, the chuck table is at least provided with: holding a surface to hold the wafer; a rotation axis passes through the center of the holding surface; and an inclination adjustment means adjusts the inclination of the rotation axis; the wafer processing method is provided with: a predetermined value setting step, which is to adjust the inclination relative to the grinding means The appropriate inclination of the rotation axis is set as a predetermined value; in a grinding step, the wafer held on the chuck table is ground by the grinding means; The wafer is positioned under the grinding means; in the rotation axis adjustment step, the control unit drives the inclination adjustment means to adjust the inclination of the rotation axis of the chuck table under the grinding means to the prescribed level and a polishing step of polishing the wafer by the polishing means; in the predetermined value setting step, the predetermined value of the inclination of the rotation axis is set in advance based on experiments for each type as described later: The type of the target wafer and the type of the polishing pad provided by the polishing means are respectively combined; when the type of the wafer and the type of the polishing pad are selected, in the rotation axis adjustment step, the control unit rotates the The inclination of the axis is adjusted to the specified value corresponding to the type.

Images