TWI772967B - High voltage device - Google Patents

Abstract

A high-voltage device includes a substrate, at least a first isolation in the substrate, a first well region, a frame-like gate structure over the first well region and covering a portion of the first isolation, a drain region in the first well region and separated from the frame-like gate structure by the first isolation, and a source region separated from the drain region by the first isolation and the frame-like gate structure. The first well region, the drain region and the source region include a first conductivity type, and the substrate includes a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other.

Description

High voltage device

Embodiments of the present invention relate to high-voltage devices.

Technological advancements in semiconductor integrated circuit (IC) materials, design, processing, and fabrication have enabled continued reductions in the size of IC devices, with each generation having smaller and more complex circuits than the previous generation.

As semiconductor circuits composed of devices such as metal oxide semiconductor field effect transistors (MOSFETs) are adapted for high voltage applications such as high voltage laterally diffused metal oxide semiconductor (HV LDMOS) devices, as advanced technologies continue to shrink in size, A question arises regarding reduced voltage performance. To prevent breakdown between the source and drain, or to reduce the resistance of the source and drain, the standard MOS process flow may be accompanied by multiple high-density implants. Substantial substrate leakage and voltage collapse often occurs as device reliability degrades.

An embodiment of the present invention relates to a high-voltage device comprising: a substrate; at least a first spacer in the substrate; a first well region; a frame-shaped gate structure in the first well region above and covering a portion of the first spacer; a drain region in the first well region and separated from the frame gate structure by the first spacer; and a source region separated from the drain region by the first spacer and the frame-shaped gate structure, wherein the first well region, the drain region and the source region comprise a first conductivity type, and the substrate comprises a first Two conductivity types, and the first conductivity type and the second conductivity type are complementary to each other.

An embodiment of the present invention relates to a high-voltage device, which includes: a substrate including a frame-shaped spacer placed therein; a frame-shaped gate structure over the substrate and covering the frame-shaped spacer a portion; a drain region in the substrate and enclosed by the frame-shaped spacer; a source region in the substrate and adjacent to the frame-shaped gate on a side opposite the drain region electrode structure; a first doped region under the drain region and separated from the substrate; and a second doped region under the source region and separated from the source region and the substrate , wherein the drain region, the source region and the first doped region comprise a first conductivity type, and the substrate and the second doped region comprise a second conductivity type complementary to the first conductivity type.

An embodiment of the present invention relates to a high-voltage device comprising: a first frame-shaped spacer and a second frame-shaped spacer, which are separated from each other; a first frame-shaped spacer covering a portion of the first frame-shaped spacer frame-shaped gate structure and a second frame-shaped gate structure covering a part of the second frame-shaped spacer; a first drain region enclosed by the first frame-shaped spacer and a second frame-shaped spacer a second drain region enclosed by the frame-shaped spacer; a first frame-shaped source region surrounding the first frame-shaped gate structure and a second frame-shaped source surrounding the second frame-shaped gate structure region; a first doped region surrounding the first frame-shaped gate structure and the second frame-shaped gate structure; and a second doped region between the first frame-shaped gate structure and the Between the second frame-shaped gate structures and coupled to the first doped region, wherein the first drain region, the second drain region, the first frame-shaped source region and the second frame-shaped source The pole region includes a first conductivity type, and the substrate, the first doped region and the second doped region include a second conductivity type complementary to the first conductivity type.

The following disclosure provides many different embodiments or examples of different means for implementing the provided subject matter. Specific examples of components and configurations are described below to simplify the present disclosure. Of course, these are only examples and are not intended to be limiting. For example, in the following description a first member is formed over or on a second member may include embodiments in which the first member and the second member are formed in direct contact, and may also include embodiments in which additional members may be An embodiment is formed between the first member and the second member so that the first member and the second member may not be in direct contact. Additionally, the present disclosure may repeat reference numerals and/or letters in various instances. This repetition is for the purpose of simplicity and clarity and does not in itself indicate a relationship between the various embodiments and/or configurations discussed.

This description of illustrative embodiments is intended to be read in conjunction with the accompanying drawings, which are considered part of the entire written description. In the description of the embodiments disclosed herein, any reference to direction or orientation is intended only for convenience of description and is in no way intended to limit the scope of the present disclosure. Words such as "below", "upper", "horizontal", "vertical", "above", "below", "upper", "below", "top" and "bottom" and their derivatives ( For example, relative terms "horizontal," "downward," "upward," etc.) should be construed to refer to the orientation as described next or as shown in the discussed drawings. These relative terms are for convenience of description only and do not require that the device be constructed or operated in a particular orientation. Unless expressly described otherwise, terms such as "attached," "attached," "connected," and "interconnected" refer to a relationship in which structures are directly or indirectly fixed or attached to each other through intervening structures, as well as movable or rigid Attachment or relationship. Furthermore, the features and advantages of the present disclosure are illustrated by reference to embodiments. Accordingly, the present disclosure expressly should not be limited to these embodiments, which illustrate some possible non-limiting combinations of features that may exist alone or in other combinations of features, which are defined by the scope of the patent application accompanying the present disclosure. category.

Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the disclosure are approximations, the numerical values set forth in the specific examples are reported as precisely as possible. Any numerical value, however, inherently contain certain errors necessarily resulting from the standard deviation found in their respective testing measurements. Also, as used herein, the terms "substantially," "about," or "approximately" generally mean within a value or range that one of ordinary skill would expect. Alternatively, the terms "substantially", "about" or "approximately" mean within an acceptable standard error of the mean as considered by one of ordinary skill. Those of ordinary skill will appreciate that the acceptable standard error may vary from technique to technique. Except in operating/working examples, or unless expressly specified otherwise, all numerical ranges, amounts, values and percentages (such as for material amounts, durations, temperatures, operating conditions, ratios of amounts and the like disclosed herein) Numerical ranges, amounts, values, and percentages) should be understood as modified by the terms "substantially," "about," or "approximately" in all instances. Accordingly, unless indicated to the contrary, the numerical parameters set forth in the present disclosure and the appended claims are approximations that may vary as desired. At a minimum, each numerical parameter should be understood in light of the number of reported significant digits and by applying ordinary rounding techniques. Ranges can be expressed herein as from one endpoint to the other or between the two endpoints. All ranges disclosed herein are inclusive of endpoints unless otherwise specified.

Typically, a high voltage device is required to have low breakdown resistance between the source/body and the substrate. In some comparative methods, an n-type buried doped layer and a p-type doped region are formed in a high voltage device so that the high voltage device can be completely isolated from the substrate. In other comparison methods, a width of the n-type buried doped layer can be increased in large cell array applications to maintain the high voltage during an off state and the high voltage gap between the source/body and the substrate. However, this increased width will result in a large area loss.

Furthermore, breakdown voltage (BVD) and on-resistance (Ron) are two important characteristics of a high voltage device used in a power switching circuit. To improve the operation of a power switching circuit incorporating MOSFETs it is recommended to use a MOSFET with a breakdown voltage as high as possible and an on-resistance as low as possible. However, to improve breakdown resistance, the large area used to employ large n-type buried doped layers results in high voltage devices suffering from increased on-resistance.

Therefore, the present disclosure provides a high-voltage device having a frame-shaped gate structure. The frame-like gate structure helps reduce current flow from the drain region through the drift region. Therefore, the breakdown voltage and breakdown resistance of the high-voltage device can be improved. In addition, since the frame-shaped gate helps to improve the breakdown resistance, a width of the n-type doped layer can be reduced, so that the on-resistance can be reduced. In other words, high voltage devices including frame-like gate structures have an increased breakdown voltage, an improved breakdown resistance, and reduced on-resistance.

In some embodiments, a high voltage device 100 is provided. The high-voltage device 100 may be an n-type high-voltage device, but the present disclosure is not limited thereto. In some embodiments, the high voltage device 100 may be referred to as a high voltage laterally diffused MOS (HV LDMOS) transistor device, a high voltage extended drain MOS (HV EDMOS) transistor device, or any other HV device.

Referring to FIGS. 1 and 2, FIG. 1 shows a top view of a high-voltage device 100, and FIG. 2 is a cross-sectional view taken along the line I-I' of FIG. 1 . In some embodiments, the high voltage device 100 includes a substrate 102 (shown in FIG. 2 ). The substrate 102 may comprise: an elemental semiconductor comprising silicon or germanium in a single crystal form, a polycrystalline form or an amorphous form; a compound semiconductor material comprising silicon carbide, gallium arsenide, gallium phosphide, phosphorous at least one of indium hydride, indium arsenide, and indium antimonide; an alloyed semiconductor material comprising at least one of SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and GaInAsP; any other suitable material; or one of the others combination. In some embodiments, the alloyed semiconductor substrate may be a SiGe alloy having a gradient Ge feature, wherein the Si and Ge composition changes from one ratio at one location of the gradient SiGe feature to another ratio at another location. In another embodiment, the SiGe alloy is formed over a silicon substrate. In some embodiments, a SiGe alloy can be mechanically strained by another material in contact with the SiGe alloy. Additionally, the substrate 102 may be a semiconductor-on-insulator, such as silicon-on-insulator (SOI). In some embodiments, the substrate 102 may include a doped epitaxial layer or a buried layer. In some embodiments, the substrate 102 may have a multi-layer structure, or the substrate 102 may include a multi-layer compound semiconductor structure.

High pressure device 100 includes a well block 110 . In some embodiments, well region 110 includes a first conductivity type and substrate 102 includes a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other. In some embodiments, the first conductivity type is an n-type and the second conductivity type is a p-type. In some embodiments, the n-type dopant includes arsenic (As), phosphorus (P), other group V elements, or any combination thereof. In some embodiments, the p-type dopant includes boron (B), other Group III elements, or any combination thereof. Although the substrate 102 and the well region 110 contain different types of dopants, a doping concentration of the well region 110 is greater than a doping concentration of the substrate 102 . The well region 110 may be referred to as a drift region. In some embodiments, well region 110 may be referred to as a high pressure n-type well (HVNW).

In some embodiments, the high voltage device 100 includes a spacer 104 , such as a frame-like spacer 104 placed in the substrate 102 . In some embodiments, as shown in FIG. 2, isolation 104 may be a shallow trench isolation (STI). In other embodiments, the spacer 104 comprises one of a localized oxide of silicon (LOCOS) structure, or any other suitable isolation structure. As shown in FIGS. 1 and 2 , a bottom of the well 110 is in contact with the substrate 102 , and the side edges 110 e of the well 110 are below the frame-like spacers 104 . In some embodiments, the frame-like spacer 104 may be referred to as surrounding the well region 110 . As shown in FIG. 2 , the spacer 104 is partially placed in the well region 110 .

In some embodiments, the high voltage device 100 includes another isolator 106 , for example, a frame-like isolator 106 . As mentioned above, the spacer 106 may be an STI, a LOCOS structure, or any other suitable isolation structure. A width of spacer 104 and a width of spacer 106 may be similar or different depending on different product designs. A depth of spacer 104 and a depth of spacer 106 are similar. As shown in FIG. 2 , spacer 106 is placed in well 110 with a bottom surface and side edges of spacer 106 in contact with well 110 .

The high pressure device 100 further includes a well block 112 positioned in the well block 110 . As shown in FIG. 2 , well 112 may be a frame-like well 112 placed between spacer 104 and spacer 106 . In some embodiments, at least a portion of a side edge of well region 112 is in contact with well region 110 , and a portion of a bottom of well region 112 is in contact with well region 110 . The well region 112 may include the second conductivity type. In some embodiments, well region 112 may be referred to as a high pressure p-type well (HVPW). In some embodiments, well 112 is separated from substrate 102 by well 110 .

The high pressure device 100 further includes a well block 114 . As shown in FIG. 2 , well 114 is partially placed in well 110 and partially in well 112 . In some embodiments, a bottom surface of well region 114 is lower than a bottom surface of well region 112, and thus well region 114 may be referred to as a deep p-type well (DPW). As shown in FIG. 2 , the bottom surface of well region 114 is in contact with well region 110 . Well region 114 may include the second conductivity type. In some embodiments, one of the doping concentrations of the well region 114 is greater than one of the doping concentrations of the well region 112 .

The high voltage device 100 includes a frame-like gate structure 120 placed on the substrate 102 . As shown in FIGS. 1 and 2 , the frame-like gate structure 120 covers a portion of the spacer 106 and a portion of the well region 110 . However, the frame-like gate structure 120 is separated from the spacer 104 . In addition, the frame-shaped gate structure 120 may be surrounded by the well region 112 . In some embodiments, a channel is formed in the well region 110 directly below the frame-like gate structure 120 . The frame-shaped gate structure 120 includes a first axis Ax1 and a second axis Ax2, wherein the first axis Ax1 is perpendicular to the second axis Ax2. In some embodiments, a length of the first axis Ax1 and a length of the second axis Ax2 are similar, so that the frame-shaped gate structure 120 has a one-point symmetrical configuration and a one-line symmetrical configuration, but the present disclosure is not limited thereto.

In some embodiments, the frame-like gate structure 120 includes a gate conductive layer 122 and a gate dielectric layer 124 between the gate conductive layer 122 and the substrate 102 . The gate conductive layer 122 may comprise polysilicon, silicon-germanium, and materials comprising elements and compounds such as Mo, Cu, W, Ti, Ta, TiN, TaN, NiSi, CoSi or other suitable conductive materials known in the art. at least one metallic material. In some embodiments, the gate conductive layer 122 includes a work function metal layer that provides an n-type metal work function or a p-type metal work function to a metal gate. The p-type metal work function material includes materials such as ruthenium, palladium, platinum, cobalt, nickel, conductive metal oxides, or other suitable materials. The n-type metal work function material includes materials such as hafnium, zirconium, titanium, tantalum, aluminum, metal carbides (eg, hafnium carbide, zirconium carbide, titanium carbide, and aluminum carbide), aluminides, or other suitable materials.

The gate dielectric layer 124 may have a single-layer or a multi-layer structure. In some embodiments, the gate dielectric layer 124 is a multi-layer structure including an interface layer and a high-k layer. The interface layer may include a dielectric material such as silicon oxide, silicon nitride, silicon oxynitride, other dielectric materials, or a combination thereof. The high-k layer may comprise a high-k material, such as _HfO2 , HfSiO, HfSiON, HfTaO, HfTiO, HfZrO, other suitable high-k materials, or a combination thereof. In some embodiments, the high dielectric constant material can be further selected from metal oxides, metal nitrides, metal silicates, transition metal oxides, transition metal nitrides, transition metal silicates, metal oxynitrides, metal Aluminates, and combinations thereof.

In some embodiments, the frame-like gate structure 120 may include spacers 126i and 126o placed over the sidewalls. In some embodiments, the frame-shaped gate structure 120 includes an inner spacer 126 i placed over an inner sidewall of the frame-shaped gate structure 120 , and an outer spacer 126 i placed over an outer sidewall of the frame-shaped gate structure 120 Spacer 126o. As shown in FIG. 2 , inner spacers 126i may be placed over spacers 106 while outer spacers 126o are placed over substrate 120 . It should be noted that the inner spacer 126i and the outer spacer 126o are omitted from FIG. 1 for clarity; however, the positions of the inner spacer 126i and the outer spacer 126o according to FIG. 2 should be readily available to those skilled in the art.

Still referring to FIGS. 1 and 2 , the high voltage device 100 includes a drain region 130D and a doped region 132 disposed in the well region 110 . In addition, the drain region 130D and the doped region 132 are enclosed by the frame-shaped spacers 106 . In other words, as shown in FIG. 1 , drain region 130D and doped region 132 are placed in a central region within frame-shaped spacer 106 and frame-shaped gate structure 120 . As shown in FIG. 2 , drain region 130D and doped region 132 are separated from frame-shaped gate structure 120 by frame-shaped spacer 106 . Doped region 132 is placed under drain region 130D. In addition, the doped region 132 is separated from the substrate 102 by the well region 110 . In some embodiments, a side edge of drain region 130D is in contact with spacer 106 and a bottom surface of drain region 130D is in contact with doped region 132 . The drain region 130D and the doped region 132 include the first conductivity type. A doping concentration of the drain region 130D is greater than that of the doping region 132 .

High voltage device 100 includes a source region 130S in substrate 102 adjacent to frame-shaped gate structure 120 on a side opposite to drain region 130D. Therefore, the source region 130S is separated from the drain region 130D by the frame-shaped gate structure 120 and the frame-shaped spacer 106 . The source region 130S includes the first conductivity type, and a doping concentration of the source region 130S is similar to that of the drain region 130D. In some embodiments, as shown in FIG. 1 , the source region 130S disposed between the frame-shaped gate structure 120 and the spacer 104 has a frame-shaped configuration surrounding the frame-shaped gate structure 120 .

In some embodiments, the high voltage device 100 further includes a doped region 140 . The doped region 140 is adjacent to the source region 130S. The doped region 140 includes the second conductivity type. In some embodiments, as shown in FIG. 1 , the doped regions 140 have a frame-like configuration surrounding the frame-like source regions 130S. In some embodiments, the doped region 140 acts as a body pickup region. Those skilled in the art will recognize that many alternatives, modifications and variations exist. For example, depending on different applications and design requirements, the body pickup region 140 and the source region 130S may share a contact plug.

Additionally, a silicide structure (not shown) may be formed on the drain region 130D, the source region 130S, and the doped region 140 . The silicide structure may include nickel silicide (NiSi), nickel platinum silicide (NiPtSi), nickel platinum germanium silicide (NiPtGeSi), nickel germanium silicide (NiGeSi), ytterbium silicide (YbSi), platinum silicide (PtSi), iridium silicide (IrSi) ), erbium silicide (ErSi), cobalt silicide (CoSi), other suitable materials, or a combination of materials thereof.

The high voltage device 100 further includes a doped region 142 disposed in the well region 110 . In some embodiments, the doped region 142 also has a frame-like configuration surrounding the frame-like gate structure 120 . However, since the doped region 142 is partially covered by the frame gate structure 120, partially covered by the source region 130S and the doped region 140, and partially covered by the spacer 104, the doped region 142 cannot be viewed from the top view. The doped region 142 includes the second conductivity type. Furthermore, one of the doping concentrations of the doped regions 142 is smaller than one of the doping concentrations of the doped regions 140 . In some embodiments, the doping concentration of the doped region 142 may be between about 2.5E+15/cm ³ and about 3.5E+18/cm ³ , but the present disclosure is not limited thereto. In some embodiments, the doped region 142 may be referred to as a high voltage p-type body (HVPB). In some embodiments, a side edge of the doped region 142 may be in contact with the well region 110 .

The high voltage device 100 further includes another doped region 144 below the doped region 142 and separated from the well region 110 by the well region 112 . In some embodiments, the doped region 144 also has a frame-like configuration surrounding the frame-like gate structure 120 . The doped region 144 includes the second conductivity type. In addition, the doping concentration of the doped region 142 is greater than a doping concentration of the doped region 144 . In some embodiments, a top surface of doped region 144 is in contact with doped region 142 , and side edges and a bottom surface of doped region 144 are in contact with well region 112 .

In some embodiments, high voltage device 100 includes another spacer 108 , such as surrounding spacer 104 , well regions 110 , 112 and 114 , doped regions 140 , 142 and 144 , source region 130S, frame gate structure 120 and a frame-shaped spacer 108 of the drain region 130D.

In some embodiments, a doped region 150 is formed between the spacers 104 and 108 . In addition, a doped region 152 and a well region 154 may be formed under the doped region 150 . Doped region 150, doped region 152, and well region 154 include the second conductivity type. A doping concentration of the doped region 150 is greater than that of the doped region 152 , and the doping concentration of the doped region 152 is greater than that of the well region 154 . In some embodiments, doped region 152 is placed under doped region 150 such that a bottom surface of doped region 150 is in contact with doped region 152 . A well region 154 is formed under the doped region 152 such that a bottom surface and side edges of the doped region 152 are in contact with the well region 154 . In some embodiments, well 154 is in contact with well 110 .

In some embodiments, the doped region 150 may serve as a guard ring for the high voltage device 100 . Doped region 150 allows an electrical bias to be applied to substrate 102 through doped region 152 and well region 154 . It should be understood that the formation of the doped regions 150 is optional.

According to some embodiments of the high pressure device 100 , an edge 112e of the well region 112 is in contact with the well region 110 . Furthermore, as shown in FIG. 2 , a distance d may be defined between edge 112e of well 112 and edge 110e of well 110 . In some embodiments, the distance d may be between about 2 μm and about 3 μm. In some comparison methods, when the distance d between edge 112e and edge 110e is less than 2 μm, the current may break down well region 110 and thus the device may fail. In an alternative comparison method, when the distance d between edge 112e and edge 110e is greater than 3 μm, the device may require more area to accommodate the well and thus cannot shrink. The breakdown resistance of one of the high voltage devices 100 may be improved by greater than about 300% compared to the comparative method.

It should be noted that a drain-to-source breakdown voltage is the voltage at which the respective device, such as high voltage device 100, can operate. When a voltage greater than the breakdown voltage is applied, catastrophic and irreversible damage is caused to the device, rendering the device commercially useless and requiring replacement of the device. Therefore, it is highly desirable to increase the breakdown voltage. In the high voltage device 100, the gate structure 120 has a frame-like configuration. Therefore, when the high voltage device 100 is in an off state, the well region 110 under the frame-like gate structure 120 can be completely depleted. In other words, when the high voltage device 100 is in an off state, a frame-shaped completely depleted region A can be formed. The frame-like fully depleted region A helps to increase the breakdown voltage. In some embodiments, the breakdown voltage of the high voltage device 100 may be improved by greater than about 27%. Since a channel width of the frame-shaped gate structure 120 is increased by the point-symmetric configuration and the line-symmetric configuration, an on-resistance of the high-voltage device 100 can be reduced.

In addition, the high-voltage device 100 has a one-point symmetrical configuration and a one-line symmetrical configuration, but the present disclosure is not limited thereto.

Referring to FIGS. 3 and 4 , FIG. 3 shows a top view of a high-voltage device 200 , and FIG. 4 is a cross-sectional view taken along the line II-II' of FIG. 3 . It should be noted that details (such as materials) of the same elements shown in FIGS. 1 and 3 and FIGS. 2 and 4 are omitted for brevity. In some embodiments, the high voltage device 200 includes a substrate 202 (shown in Figure 4). High pressure device 200 includes well blocks 210-1 and 210-2. In some embodiments, well regions 210-1 and 210-2 include a first conductivity type, and substrate 202 includes a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other. In some embodiments, the first conductivity type is an n-type and the second conductivity type is a p-type. Although the substrate 202 and the well regions 210 - 1 and 210 - 2 contain different types of dopants, one of the well regions 210 - 1 and 210 - 2 has a higher dopant concentration than one of the substrate 202 . In addition, the doping concentration of the well region 210-1 and the doping concentration of the well region 210-2 are the same. Well regions 210-1 and 210-2 may be referred to as a drift region. In some embodiments, well regions 210-1 and 210-2 may be referred to as a high pressure n-type well (HVNW).

In some embodiments, the high voltage device 200 includes a frame-shaped spacer 204 - 1 and a frame-shaped spacer 204 - 2 placed in the substrate 202 . As shown in FIGS. 3 and 4 , the frame-like spacer 204-1 and the frame-like spacer 204-2 are separated from each other. In some embodiments, as shown in FIG. 4, frame-like spacers 204-1 and 204-2 may be STIs. In other embodiments, frame-like spacer 204-1 and frame-like spacer 204-2 comprise a LOCOS structure or one of any other suitable spacer structures. A width and a depth of the frame-shaped spacer 204-1 are similar to a width and a depth of the frame-shaped spacer 204-2. As shown in FIGS. 3 and 4 , the bottoms of the wells 210 - 1 and 210 - 2 are in contact with the substrate 202 . The side edge 210e-1 of the well region 210-1 is under the frame-like spacer 204-1, and the side edge 210e-2 of the well region 210-2 is under the frame-like spacer 204-2. In some embodiments, frame-like spacer 204-1 may be referred to as surrounding well region 210-1, and frame-like spacer 204-2 may be referred to as surrounding well region 210-2. As shown in Figure 4, frame-like spacer 204-1 is partially placed in well 210-1 and frame-like spacer 204-2 is partially placed in well 210-2.

In some embodiments, the high voltage device 200 includes a frame-shaped spacer 206-1 and a frame-shaped spacer 206-2 separated from each other. As mentioned above, the frame-like spacers 206-1 and 206-2 may be an STI, a LOCOS structure, or any other suitable spacer structure. Depending on the product design, one of the widths of the frame-like spacers 204-1, 204-2 and one of the frame-like spacers 206-1, 206-2 may be similar or different. One of the frame-like spacers 204-1, 204-2 has a similar depth as one of the frame-like spacers 206-1, 206-2. Frame-like spacer 206-1 is placed in well 210-1, and frame-like spacer 206-2 is placed in well 210-2. As shown in Figure 4, one bottom surface and side edge of frame-like spacer 206-1 is in contact with well region 210-1, and one bottom surface and side edge of frame-like spacer 206-2 is in contact with well region 210-2 .

The high pressure device 200 further includes a frame-like well block 212-1 placed in the well block 210-1, and a frame-like well block 212-2 in the well block 210-2. As shown in FIG. 4 , frame-like well 212 - 1 is placed between frame-like spacer 204 - 1 and frame-like spacer 206 - 1 , while frame-like well area 212 - 2 is placed between frame-like spacer 204 -2 and the frame-like spacer 206-2. In some embodiments, at least a portion of a side edge of the frame-shaped well region 212-1 is in contact with the well region 210-1, and a portion of a bottom of the frame-shaped well region 212-1 is in contact with the well region 210-1. Similarly, at least a portion of the side edge of the frame-shaped well region 212-2 is in contact with the well region 210-2, and a portion of a bottom of the frame-shaped well region 212-2 is in contact with the well region 210-2. The frame-shaped well regions 212-1 and 212-2 may include the second conductivity type. A doping concentration of the frame-shaped well region 212-1 and a doping concentration of the frame-shaped well region 212-2 are the same. In some embodiments, framed well regions 212-1 and 212-2 may be referred to as high pressure p-type wells (HVPWs). In addition, the frame-shaped well regions 212-1 and 212-2 are separated from each other.

The high pressure device 200 further includes frame-like well regions 214-1 and 214-2 separated from each other. As shown in FIG. 4, framed well 214-1 is partially placed in well 210-1 and partially in framed well 212-1, and framed well 214-2 is partially placed in well 210- 2 and partially placed in the frame-like well region 212-2. In some embodiments, the bottom surface of one of the framed well regions 214-1 is lower than the bottom surface of one of the framed well regions 212-1; -1 contact. Similarly, one of the bottom surfaces of the frame-like well region 214-2 is in contact with the well region 210-2. Accordingly, the frame-like well regions 214-1 and 214-2 may be referred to as deep p-type wells (DPWs). The frame-like well regions 214-1 and 214-2 may include the second conductivity type. In some embodiments, one of the frame-shaped well regions 214-1 and 214-2 has a higher doping concentration than one of the frame-shaped well regions 212-1 and 212-2. In addition, the doping concentration of the frame-shaped well region 214-1 and the doping concentration of the frame-shaped well region 214-2 are the same.

The high voltage device 200 includes frame-like gate structures 220-1 and 220-2 separated from each other. As shown in Figures 3 and 4, the frame-like gate structure 220-1 covers a portion of the frame-like spacer 206-1 and a portion of the well region 210-1, and the frame-like gate structure 220-2 covers the frame-like spacer A portion of 206-2 and a portion of well block 210-2. The frame-shaped gate structure 220-1 is separated from the frame-shaped spacer 204-1, and the frame-shaped gate structure 220-2 is separated from the frame-shaped spacer 204-2. In addition, the frame-shaped gate structure 220-1 may be surrounded by the frame-shaped well region 212-1, and the frame-shaped gate structure 220-2 may be surrounded by the frame-shaped well region 212-2. The frame-shaped gate structures 220-1 and 220-2 respectively include a first axis Ax1 and a second axis Ax2, and the first axis Ax1 is perpendicular to the second axis Ax2. In some embodiments, as shown in FIG. 3, a length of the first axis Ax1 is greater than a length of the second axis Ax2.

In some embodiments, the frame-shaped gate structures 220 - 1 and 220 - 2 respectively include a gate conductive layer 222 and a gate dielectric layer 224 between the gate conductive layer 222 and the substrate 202 . The gate dielectric layer 224 may have a single-layer or a multi-layer structure. In some embodiments, the gate dielectric layer 224 is a multi-layer structure including an interface layer and a high-k layer. In some embodiments, each of the frame-like gate structures 220-1 and 220-2 may include spacers 226i and 226o placed over the sidewalls. In some embodiments, each of the frame-like gate structures 220-1 and 220-2 includes an inner spacer 226i placed over an inner sidewall and an outer spacer 226o placed over an outer sidewall. As shown in FIG. 4 , inner spacers 226i may be placed over frame-like spacers 206-1 or 206-2, while outer spacers 226o are placed over substrate 202. Furthermore, it should be noted that the inner spacer 226i and the outer spacer 226o are omitted from FIG. 3 for clarity, however, the positions of the inner spacer 226i and the outer spacer 226o according to FIG. 4 should be readily available to those skilled in the art.

Still referring to FIGS. 3 and 4, the high voltage device 200 includes a drain region 230D-1 and a doped region 232-1 placed in the well region 210-1, and a drain electrode placed in the well region 210-2 Region 230D-2 and a doped region 232-2. In addition, the drain region 230D-1 and the doped region 232-1 are enclosed by the frame-shaped spacer 206-1, and the drain region 230D-2 and the doped region 232-2 are enclosed by the frame-shaped spacer 206-2 enclosed. In other words, as shown in FIG. 3, the drain region 230D-1 and the doped region 232-1 are placed in a central region within the frame-shaped spacer 206-1 and the frame-shaped gate structure 220-1, and the drain region 230D-2 and doped region 232-2 are placed in a central region within frame-shaped spacer 206-2 and frame-shaped gate structure 220-2. As shown in FIG. 4, drain region 230D-1 and doped region 232-1 are separated from frame-shaped gate structure 220-1 by frame-shaped spacer 206-1, and drain region 230D-2 and doped region 232-2 is separated from the frame-shaped gate structure 220-2 by the frame-shaped spacer 206-2. Doped regions 232-1 and 232-2 are placed under drain regions 230D-1 and 230D-2. In addition, the doped region 232-1 is separated from the substrate 202 by the well region 210-1, and the doped region 232-2 is separated from the substrate 202 by the well region 210-2. In some embodiments, a side edge of drain region 230D-1 is in contact with frame-shaped spacer 206-1, and a bottom surface of drain region 230D-1 is in contact with doped region 232-1. Similarly, a side edge of drain region 230D-2 is in contact with frame-shaped spacer 206-2, and a bottom surface of drain region 230D-2 is in contact with doped region 232-2. The drain regions 230D-1, 230D-2 and the doped regions 232-1, 232-2 include the first conductivity type. One of the doping concentrations of the drain regions 230D-1 and 230D-2 is greater than one of the doping concentrations of the doping regions 232-1 and 232-2.

High voltage device 200 includes a frame-shaped source region 230S-1 in substrate 202 adjacent to frame-shaped gate structure 220-1 on a side opposite to drain region 230D-1, and in substrate 202 and on An opposite side of the drain region 230D-2 is adjacent to a frame-shaped source region 230S-2 of the frame-shaped gate structure 220-2. Therefore, the frame-shaped source region 230S-1 is separated from the drain region 230D-1 by the frame-shaped gate structure 220-1 and the frame-shaped spacer 206-1. Similarly, therefore, the frame-shaped source region 230S-2 is separated from the drain region 230D-2 by the frame-shaped gate structure 220-2 and the frame-shaped spacer 206-2. The frame-shaped source regions 230S-1 and 230S-2 comprise the first conductivity type, and a doping concentration of the frame-shaped source regions 230S-1 and 230S-2 is similar to that of the drain regions 230D-1 and 230D-2 impurity concentration. In addition, the frame-shaped source region 230S-1 is placed between the frame-shaped gate structure 220-1 and the frame-shaped spacer 204-1 and surrounds the frame-shaped gate structure 220-1, and the frame-shaped source region 230S- 2 is placed between the frame-like gate structure 220-2 and the frame-like spacer 204-2 and surrounds the frame-like gate structure 220-2.

In some embodiments, the high voltage device 200 further includes a frame-shaped doped region 240-1 adjacent to the frame-shaped source region 230S-1, and a frame-shaped doped region 240-1 adjacent to the frame-shaped source region 230S-2 2. The frame-shaped doped regions 240-1 and 240-2 include the second conductivity type. In some embodiments, frame-like doped regions 240-1 and 240-2 serve as body pickup regions. Those skilled in the art will recognize that many alternatives, modifications and variations exist. For example, depending on different applications and design requirements, the frame-shaped body pickup region 240-1 and the frame-shaped source region 230S-1 may share a contact plug, and the frame-shaped body pickup region 240-2 and the frame-shaped source region 230S-1 may share a contact plug. The pole regions 230S-2 may share a contact plug.

As mentioned above, silicide structures (not shown) may be formed on the drain regions 230D-1 and 230D-2, the frame-shaped source regions 230S-1 and 230S-2, and the frame-shaped doped regions 240-1 and 240-2. exhibit).

The high voltage device 200 further includes a frame-shaped doped region 242-1 disposed in the well region 210-1, and a frame-shaped doped region 242-2 in the well region 210-2. The frame-shaped doped region 242-1 is partly covered by the frame-shaped gate structure 220-1, partly covered by the frame-shaped source region 230S-1 and the frame-shaped doped region 240-1, and partly covered by the frame-shaped spacer 204- 1 coverage; therefore, the frame-like doped region 242-1 cannot be seen from the top view. Similarly, frame-shaped doped region 242-2 is partially covered by frame-shaped gate structure 220-2, partially covered by frame-shaped source region 230S-2 and frame-shaped doped region 240-2, and partially covered by frame-shaped isolation The element 204-2 is partially covered; therefore, the frame-like doped region 242-2 cannot be seen from the top view. The frame-shaped doped regions 242-1 and 242-2 include the second conductivity type. A doping concentration of the frame-shaped doping region 242-1 and a doping concentration of the frame-shaped doping region 242-2 are the same. In addition, the doping concentrations of the frame-shaped doping regions 242-1 and 242-2 are smaller than those of the frame-shaped doping regions 240-1 and 240-2. In some embodiments, the frame-like doped regions 242-1 and 242-2 may be referred to as a high voltage p-type body (HVPB). In some embodiments, one side edge of the frame-shaped doped region 242-1 may be in contact with the well region 210-1, and one side edge of the frame-shaped doped region 242-2 may be in contact with the well region 210-2.

The high voltage device 200 further includes another frame-shaped doped region 244-1 below the frame-shaped doped region 242-1 and separated from the well region 210-1 by the frame-shaped well region 212-1, and a A frame-shaped doped region 244-2 below the doped region 242-2 and separated from the well region 210-2 by the frame-shaped well region 212-2. The frame-shaped doped region 244-1 surrounds the frame-shaped gate structure 220-1, and the frame-shaped doped region 244-2 surrounds the frame-shaped gate structure 220-2. The frame-shaped doped regions 244-1 and 244-2 include the second conductivity type. One of the doping concentrations of the frame-shaped doped regions 244-1 and one of the doping concentrations of the frame-shaped doped regions 244-2 are the same. In addition, the doping concentrations of the doped regions 242-1 and 242-2 are greater than the doping concentrations of the doped regions 244-1 and 244-2. In some embodiments, a top surface of the frame-shaped doped region 244-1 is in contact with the frame-shaped doped region 242-1, and side edges and a bottom surface of the frame-shaped doped region 244-1 are in contact with the frame-shaped well region 212-1 Contact. Similarly, a top surface of the frame-shaped doped region 244-2 is in contact with the frame-shaped doped region 242-2, and a side edge and a bottom surface of the frame-shaped doped region 244-2 are in contact with the frame-shaped well region 212-2 touch.

In some embodiments, high pressure device 200 includes surrounding spacers 204-1 and 204-2, wells 210-1 and 210-2, framed wells 212-1, 212-2, 214-1 and 214-2 , frame-shaped doped regions 240-1, 240-2, 242-1, 242-2, 244-1 and 244-2, frame-shaped source regions 230S-1 and 230S-2, frame-shaped gate structure 220- 1 and 220-2, and another frame-like spacer 208 for drain regions 230D-1 and 230D-2.

In some embodiments, a frame-shaped doped region 250a is placed between the frame-shaped spacer 204-1 and the frame-shaped spacer 208. In addition, a doped region 250b is placed between the frame-shaped spacer 204-1 and the frame-shaped spacer 204-2. The frame-shaped doped region 250a and the doped region 250b are coupled. The high voltage device 200 further includes a frame-shaped doped region 252a and a frame-shaped well region 254a under the frame-shaped doped region 250a, and a doped region 252b and a well region 254b under the doped region 250b. Doped region 252b is coupled to frame-shaped doped region 252a, and well region 254b is coupled to frame-shaped well region 254a.

Frame-shaped doped regions 250a, doped regions 250b, frame-shaped doped regions 252a, doped regions 252b, frame-shaped well regions 254a, and well regions 254b include the second conductivity type. A doping concentration of the frame-shaped doping region 250a and a doping concentration of the doping region 250b are the same, a doping concentration of the frame-shaped doping region 252a and a doping concentration of the doping region 252b are the same, and the frame-shaped well A doping concentration of the region 254a and a doping concentration of the well region 254b are the same. In addition, the doping concentration of the frame-shaped doping region 250a and the doping region 250b is greater than the doping concentration of the frame-shaped doping region 252a and the doping region 252b, and the doping concentration of the frame-shaped doping region 252a and the doping region 252b It is larger than the doping concentration of the frame-shaped well region 254a and the well region 254b. In some embodiments, the frame-shaped doped region 252a is placed under the frame-shaped doped region 250a such that a bottom surface of the frame-shaped doped region 250a is in contact with the frame-shaped doped region 252a. The frame-shaped well region 254a is formed under the frame-shaped doped region 252a such that a bottom surface and side edges of the frame-shaped doped region 252a are in contact with the frame-shaped well region 254a. Similarly, doped region 252b is placed under doped region 250b such that a bottom surface of doped region 250b is in contact with doped region 252b. The well region 254b is formed under the doped region 252b such that a bottom surface and side edges of the doped region 252b are in contact with the well region 254b. In some embodiments, framed well region 254a and framed well region 254b are in contact with both well regions 210-1 and 210-2.

In some embodiments, the frame-like doped regions 250a and 250b may serve as guard rings for the high voltage device 200 . Frame doped regions 250a and 250b allow an electrical bias to be applied to substrate 202 through frame doped regions 252a, frame doped regions 252b, frame well regions 254a, and frame well regions 254b. It should be understood that the formation of the frame-shaped doped region 250a and the frame-shaped doped region 250b is selected.

Furthermore, as shown in FIG. 3, the high voltage device 200 has a line-symmetric configuration about a central axis CA. In some embodiments, the central axis CA passes through the doped region 250b. Therefore, the configuration of the elements on the left side of the central axis CA (ie, drain region 230D-1, doped region 232-1, frame-shaped spacer 204-1, frame-shaped gate structure 220-1, frame-shaped source region 230S) -1. The arrangement of the frame-shaped doped regions 240-1, 242-1, 244-1, the well region 210-1, and the frame-shaped well regions 212-1, 214-1) and the elements on the right side of the central axis CA (ie , drain region 230D-2, doped region 232-2, frame-shaped spacer 204-2, frame-shaped gate structure 220-2, frame-shaped source region 230S-2, frame-shaped doped region 240-2, 242-2, 244-2, well block 210-2, and frame-shaped well blocks 212-2, 214-2) are the same. In some embodiments, the drain regions 230D-1 and 230D-2 are electrically connected to a same connection structure, the frame-shaped gate structures 220-1 and 220-2 are electrically connected to a same connection structure, and the frame-shaped source regions 230S-1 and 230S-2 are electrically connected to a same connection structure.

According to some embodiments of high pressure device 200, as shown in Figure 4, there may be between edge 212e-1 of well region 212-1 and edge 210e-1 of well region 210-1 and at one edge of well region 212-2 A distance d is defined between 212e-2 and the edge 210e-2 of the well region 210-2. In some embodiments, the distance d may be between about 2 μm and about 3 μm. In some comparison methods, when the distance d is less than 2 μm, the current may break down the well regions 210-1, 210-2 and thus the device may fail. In an alternative comparison method, when the distance d is greater than 3 μm, the device may require more area to accommodate the well area and therefore cannot shrink. The breakdown resistance of one of the high voltage devices 200 may be improved by greater than about 300% compared to the comparative method.

In addition, in the high voltage device 200, when the high voltage device 200 is in an off state, the well region 210-1 under the frame-shaped gate structure 220-1 and the well region 210 under the frame-shaped gate structure 220-2 -2 can be completely empty. In other words, when the high voltage device 200 is in an off state, the frame-shaped completely depleted region A may be formed. The frame-like fully depleted region A helps to increase the breakdown voltage. In some embodiments, the breakdown voltage of the high voltage device 200 may be improved by greater than about 27%.

Since a channel width is increased by the frame-shaped gate structures 220-1 and 220-2, an on-resistance of the high-voltage device 200 can be reduced.

Therefore, the present disclosure provides a high-voltage device having a frame-shaped gate structure. The frame-like gate structure helps reduce current flow from the drain region through the drift region. Therefore, the breakdown voltage and breakdown resistance of the high-voltage device can be improved. In addition, since the frame-shaped gate helps to improve the breakdown resistance, a width of the n-type doped layer can be reduced, so that the on-resistance can be reduced. In other words, high voltage devices including frame-like gate structures have an increased breakdown voltage, an improved breakdown resistance, and reduced on-resistance.

According to an embodiment of the present disclosure, a high-voltage device is provided. The high-voltage device includes: a substrate; at least one first spacer in the substrate; a first well area; a frame-shaped gate structure over the first well area and covering the first spacer a portion; a drain region in the first well region and separated from the frame-like gate structure by the first spacer; and a source region by the first spacer and the frame The gate-like structure is separated from the drain region. In some embodiments, the first well region, the drain region, and the source region include a first conductivity type, and the substrate includes a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other.

According to an embodiment of the present disclosure, a high-voltage device is provided. The high-voltage device includes: a substrate including a frame-shaped spacer placed therein; a frame-shaped gate structure over the substrate and covering a portion of the frame-shaped spacer; a drain region in the in the substrate and enclosed by the frame-shaped spacer; a source region in the substrate and adjacent to the frame-shaped gate structure on a side opposite to the drain region; a first doped region, under the drain region and separate from the substrate; and a second doped region under the source region and separate from the source region and the substrate. In some embodiments, the drain region, the source region and the first doped region comprise a first conductivity type, and the substrate and the second doped region comprise a first conductivity type complementary to the first conductivity type Two conductivity types.

According to an embodiment of the present disclosure, a high-voltage device is provided. The high-voltage device includes a first frame-shaped spacer and a second frame-shaped spacer separated from each other, a first frame-shaped gate structure covering a portion of the first frame-shaped spacer, and covering the second frame-shaped spacer a second frame-shaped gate structure of a portion of the component, a first drain region enclosed by the first frame-shaped spacer, and a second drain region enclosed by the second frame-shaped spacer , a first frame-shaped source region surrounding the first frame-shaped gate structure and a second frame-shaped source region surrounding the second frame-shaped gate structure, surrounding the first frame-shaped gate structure and the A first doped region of the second frame-shaped gate structure, and a second doped region between the first frame-shaped gate structure and the second frame-shaped gate structure. The second doped region is coupled to the first doped region. In some embodiments, the first drain region, the second drain region, the first frame-shaped source region, and the second frame-shaped source region comprise a first conductivity type, and the substrate, the first frame-shaped source region, and the A doped region and the second doped region include a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other.

The foregoing outlines features of several embodiments so that those skilled in the art may better understand aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments described herein. Those skilled in the art should also understand that these equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they can make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.

100: High voltage device 102: Substrate 104: Frame-like spacer 106: Frame-like spacer 108: Frame-like spacer 110: Well District 110e: side edge 112: Well District 112e: Edge 114: Well District 120: Frame gate structure 122: gate conductive layer 124: gate dielectric layer 126i: Internal Spacer 126o: External spacer 130D: drain region 130S: source region 132: Doping region 140: Doping region 142: Doping region 144: Doping region 150: Doping region 152: Doping region 154: Well District 200: High pressure device 202: Substrate 204-1: Frame-like spacer 204-2: Frame-like spacer 206-1: Frame-like spacer 206-2: Frame-like spacer 208: Frame-like spacer 210-1: Well Area 210-2: Well Area 210e-1: Side Edge 210e-2: Side Edge 212-1: Framed Well Area 212-2: Framed Well Area 212e-1: Edge 214-1: Framed Well Area 214-2: Framed Well Area 220-1: Frame gate structure 220-2: Frame gate structure 222: gate conductive layer 224: gate dielectric layer 226i: Internal Spacer 226o: External Spacer 230D-1: Drain region 230D-2: Drain region 230S-1: Frame-shaped source region 230S-2: Frame-shaped source region 232-1: Doping region 232-2: Doping region 240-1: Frame-like doped regions 240-2: Frame-shaped doped region/frame-shaped body pick-up region 242-1: Frame-like doped regions 242-2: Frame-like doped regions 244-1: Frame-like doped regions 244-2: Frame-like doped regions 250a: frame-like doped region 250b: Doping region 252a: frame-like doped region 252b: Doping region 254a: Framed well area 254b: Well area Ax1: the first axis Ax2: Second axis d: distance

Aspects of the present disclosure are best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that in accordance with standard practice in the industry, the various components are not drawn to scale. In fact, the dimensions of the various components may be arbitrarily increased or decreased for clarity of discussion.

1 is a top view of a high voltage device according to aspects of the present disclosure in one or more embodiments.

Fig. 2 is a cross-sectional view taken along the line I-I' of Fig. 1 .

3 is a top view of a high voltage device according to aspects of the present disclosure in one or more embodiments.

Fig. 4 is a cross-sectional view taken along the line II-II' of Fig. 3 .

100: High voltage device

104: Frame-like spacer

106: Frame-like spacer

108: Frame-like spacer

110: Well District

120: Frame gate structure

130D: drain region

130S: source region

140: Doping region

150: Doping region

Ax1: the first axis

Ax2: Second axis

Claims (10)

A high-voltage device comprising: a substrate; at least a first spacer in the substrate; a first well region; a second well region in the first well region; a frame-shaped gate structure , which is above the first well region and covers a portion of the first spacer; a drain region in the first well region and separated from the frame-like gate structure by the first spacer; a source region separated from the drain region by the first spacer and the frame-shaped gate structure; a first doped region in the first well region and by the first isolation a second doped region adjacent to the source region; and a third doped region below the second doped region, wherein the first well region , the drain region, the source region and the first doped region comprise a first conductivity type, the substrate, the second well region, the second doped region and the third doped region comprise a second conductivity type, and the first conductivity type and the second conductivity type are complementary to each other. The high pressure device of claim 1, wherein a side edge of the second well area is in contact with the first well area. The high-voltage device of claim 1, further comprising a fourth doped region below the third doped region, wherein the fourth doped region includes the second conductivity type, and through the second well region The fourth doped region is separated from the first well region. The high-voltage device of claim 1, further comprising a third well region in the first well region and the second well region, wherein the third well region includes the second conductivity type. The high-voltage device of claim 1, further comprising a second spacer disposed in the substrate and separated from the frame-shaped gate structure and the first spacer, wherein the source region is disposed in the frame-shaped gate between the pole structure and the second spacer. A high voltage device comprising: a substrate including a frame-like spacer placed therein; a first well region in the substrate; a second well region in the first well region and by separated from the substrate by the first well region; a third well region, wherein a portion of the third well region is in the first well region and a portion of the third well region is in the second well region; a a frame-shaped gate structure over the substrate and covering a portion of the frame-shaped spacer; a drain region in the substrate and enclosed by the frame-shaped spacer; a source region in the in the substrate and adjacent to the frame on a side opposite the drain region gate structure; a first doped region under the drain region and separated from the substrate; a second doped region under the source region and with the source region and the substrate separation; and a third doped region above the second well region, wherein a sidewall of the third doped region is in contact with the first well region, and the second doped region is between the third doped region between the impurity region and the third well region, wherein the first well region, the drain region, the source region and the first doped region comprise a first conductivity type, and the substrate, the second well region , the third well region, the second doped region and the third doped region comprise a second conductivity type complementary to the first conductivity type. The high voltage device of claim 6, wherein the second well region has a frame-like configuration surrounding the frame-like gate structure. The high voltage device of claim 6, wherein the third doped region has a frame-like configuration, and the third well region has a frame-like configuration. A high-voltage device includes: a first frame-shaped spacer and a second frame-shaped spacer, which are separated from each other; a first frame-shaped gate structure covering a portion of the first frame-shaped spacer and covering the A second frame-shaped gate structure of a portion of the second frame-shaped spacer; a first drain region enclosed by the first frame-shaped spacer and a second frame-shaped spacer enclosed by the second frame-shaped spacer second drain region; a first frame-shaped source region surrounding the first frame-shaped gate structure and surrounding the second frame a second frame-shaped source region of the frame-shaped gate structure; a first doped region surrounding the first frame-shaped gate structure and the second frame-shaped gate structure; and a second doped region, It is between the first frame-shaped gate structure and the second frame-shaped gate structure, and is coupled to the first doping region, wherein the first drain region, the second drain region, the first A frame-shaped source region and the second frame-shaped source region include a first conductivity type, and the first doped region and the second doped region include a second conductivity type complementary to the first conductivity type . The high-voltage device of claim 9, further comprising: a first well region and a second well region, including the first conductivity type; and a first frame-shaped well region and a second frame-shaped well region, These include the second conductivity type, wherein the first frame-like well region is in the first well region, and the second frame-like well region is in the second well region.

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