TWI767481B - Photosensitive resin composition, and dry film photoresist, photosensitive element, circuit board, and display device using the same - Google Patents
Photosensitive resin composition, and dry film photoresist, photosensitive element, circuit board, and display device using the same Download PDFInfo
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- TWI767481B TWI767481B TW109146583A TW109146583A TWI767481B TW I767481 B TWI767481 B TW I767481B TW 109146583 A TW109146583 A TW 109146583A TW 109146583 A TW109146583 A TW 109146583A TW I767481 B TWI767481 B TW I767481B
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- Taiwan
- Prior art keywords
- photosensitive resin
- chemical formula
- repeating unit
- resin layer
- unit represented
- Prior art date
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- 239000011342 resin composition Substances 0.000 title claims abstract description 136
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 98
- 239000011347 resin Substances 0.000 claims abstract description 294
- 229920005989 resin Polymers 0.000 claims abstract description 294
- 239000000126 substance Substances 0.000 claims abstract description 244
- 239000011230 binding agent Substances 0.000 claims abstract description 86
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 134
- 125000004432 carbon atom Chemical group C* 0.000 claims description 98
- 239000000758 substrate Substances 0.000 claims description 85
- -1 acrylate compound Chemical class 0.000 claims description 79
- 229910052759 nickel Inorganic materials 0.000 claims description 67
- 239000007864 aqueous solution Substances 0.000 claims description 61
- 125000000217 alkyl group Chemical group 0.000 claims description 59
- 238000007747 plating Methods 0.000 claims description 56
- 238000011161 development Methods 0.000 claims description 47
- 150000001875 compounds Chemical class 0.000 claims description 37
- 125000003118 aryl group Chemical group 0.000 claims description 29
- 229910052739 hydrogen Inorganic materials 0.000 claims description 28
- 239000001257 hydrogen Substances 0.000 claims description 28
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 25
- 229920000307 polymer substrate Polymers 0.000 claims description 21
- 125000002947 alkylene group Chemical group 0.000 claims description 20
- 239000003999 initiator Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- NIXOWILDQLNWCW-UHFFFAOYSA-M acrylate group Chemical group C(C=C)(=O)[O-] NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 12
- 239000000853 adhesive Substances 0.000 claims description 12
- 230000001070 adhesive effect Effects 0.000 claims description 12
- 125000000524 functional group Chemical group 0.000 claims description 10
- 230000001588 bifunctional effect Effects 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 150000002431 hydrogen Chemical class 0.000 claims description 3
- 239000004593 Epoxy Substances 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims 2
- 239000001294 propane Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 91
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 63
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 54
- 239000000178 monomer Substances 0.000 description 36
- 230000001681 protective effect Effects 0.000 description 32
- 239000011146 organic particle Substances 0.000 description 27
- 239000000243 solution Substances 0.000 description 27
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 26
- 238000000576 coating method Methods 0.000 description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 24
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 23
- 230000000052 comparative effect Effects 0.000 description 23
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 22
- 238000007654 immersion Methods 0.000 description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 21
- 239000011248 coating agent Substances 0.000 description 21
- 229910052802 copper Inorganic materials 0.000 description 21
- 239000010949 copper Substances 0.000 description 21
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 19
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 19
- 239000007787 solid Substances 0.000 description 19
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 15
- 239000002253 acid Substances 0.000 description 15
- 230000000694 effects Effects 0.000 description 14
- 238000005227 gel permeation chromatography Methods 0.000 description 13
- 239000000203 mixture Substances 0.000 description 13
- 239000002245 particle Substances 0.000 description 13
- 238000002360 preparation method Methods 0.000 description 13
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 12
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 239000003513 alkali Substances 0.000 description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 12
- 229910052737 gold Inorganic materials 0.000 description 12
- 239000010931 gold Substances 0.000 description 12
- 230000001965 increasing effect Effects 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 229920000139 polyethylene terephthalate Polymers 0.000 description 12
- 239000005020 polyethylene terephthalate Substances 0.000 description 12
- 125000001424 substituent group Chemical group 0.000 description 12
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 11
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 11
- BRZANEXCSZCZCI-UHFFFAOYSA-N Nifenazone Chemical compound O=C1N(C=2C=CC=CC=2)N(C)C(C)=C1NC(=O)C1=CC=CN=C1 BRZANEXCSZCZCI-UHFFFAOYSA-N 0.000 description 11
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 10
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 10
- 238000009713 electroplating Methods 0.000 description 10
- 238000010030 laminating Methods 0.000 description 10
- 229930185605 Bisphenol Natural products 0.000 description 9
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 9
- 239000004698 Polyethylene Substances 0.000 description 9
- 239000003054 catalyst Substances 0.000 description 9
- 238000005259 measurement Methods 0.000 description 9
- 229920000573 polyethylene Polymers 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 229920002799 BoPET Polymers 0.000 description 8
- 229920002284 Cellulose triacetate Polymers 0.000 description 8
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 8
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 8
- 239000012153 distilled water Substances 0.000 description 8
- 238000001035 drying Methods 0.000 description 8
- 230000009477 glass transition Effects 0.000 description 8
- 238000000879 optical micrograph Methods 0.000 description 8
- 239000002985 plastic film Substances 0.000 description 8
- 229920006255 plastic film Polymers 0.000 description 8
- 229920000636 poly(norbornene) polymer Polymers 0.000 description 8
- SOGAXMICEFXMKE-UHFFFAOYSA-N Butylmethacrylate Chemical compound CCCCOC(=O)C(C)=C SOGAXMICEFXMKE-UHFFFAOYSA-N 0.000 description 7
- 239000004793 Polystyrene Substances 0.000 description 7
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 7
- 229920002223 polystyrene Polymers 0.000 description 7
- 229910052708 sodium Inorganic materials 0.000 description 7
- 239000011734 sodium Substances 0.000 description 7
- CEXQWAAGPPNOQF-UHFFFAOYSA-N 2-phenoxyethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOC1=CC=CC=C1 CEXQWAAGPPNOQF-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- KJFMBFZCATUALV-UHFFFAOYSA-N phenolphthalein Chemical compound C1=CC(O)=CC=C1C1(C=2C=CC(O)=CC=2)C2=CC=CC=C2C(=O)O1 KJFMBFZCATUALV-UHFFFAOYSA-N 0.000 description 6
- 239000004417 polycarbonate Substances 0.000 description 6
- 229920000515 polycarbonate Polymers 0.000 description 6
- 238000010992 reflux Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000004840 adhesive resin Substances 0.000 description 5
- 229920006223 adhesive resin Polymers 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 239000000975 dye Substances 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 238000005755 formation reaction Methods 0.000 description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 5
- 238000000016 photochemical curing Methods 0.000 description 5
- 229920006267 polyester film Polymers 0.000 description 5
- 229910000029 sodium carbonate Inorganic materials 0.000 description 5
- 238000004804 winding Methods 0.000 description 5
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 4
- 238000004132 cross linking Methods 0.000 description 4
- 238000001723 curing Methods 0.000 description 4
- 125000004386 diacrylate group Chemical group 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 4
- 238000005096 rolling process Methods 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical class C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 238000004040 coloring Methods 0.000 description 3
- 230000003750 conditioning effect Effects 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 239000012046 mixed solvent Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 3
- 229920005604 random copolymer Polymers 0.000 description 3
- SPEUIVXLLWOEMJ-UHFFFAOYSA-N 1,1-dimethoxyethane Chemical compound COC(C)OC SPEUIVXLLWOEMJ-UHFFFAOYSA-N 0.000 description 2
- YFKBXYGUSOXJGS-UHFFFAOYSA-N 1,3-Diphenyl-2-propanone Chemical compound C=1C=CC=CC=1CC(=O)CC1=CC=CC=C1 YFKBXYGUSOXJGS-UHFFFAOYSA-N 0.000 description 2
- LIUXTOHGZBUDEX-UHFFFAOYSA-N 1-(2-butoxyphenyl)-2-hydroxy-2-phenylethanone Chemical compound CCCCOC1=CC=CC=C1C(=O)C(O)C1=CC=CC=C1 LIUXTOHGZBUDEX-UHFFFAOYSA-N 0.000 description 2
- NJWGQARXZDRHCD-UHFFFAOYSA-N 2-methylanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3C(=O)C2=C1 NJWGQARXZDRHCD-UHFFFAOYSA-N 0.000 description 2
- 125000005916 2-methylpentyl group Chemical group 0.000 description 2
- RUMACXVDVNRZJZ-UHFFFAOYSA-N 2-methylpropyl 2-methylprop-2-enoate Chemical compound CC(C)COC(=O)C(C)=C RUMACXVDVNRZJZ-UHFFFAOYSA-N 0.000 description 2
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
- YDIYEOMDOWUDTJ-UHFFFAOYSA-N 4-(dimethylamino)benzoic acid Chemical compound CN(C)C1=CC=C(C(O)=O)C=C1 YDIYEOMDOWUDTJ-UHFFFAOYSA-N 0.000 description 2
- LYCNQAIOLGIAFA-UHFFFAOYSA-N 4-[bis[4-(dimethylamino)-2-methylphenyl]methyl]-n,n,3-trimethylaniline Chemical compound CC1=CC(N(C)C)=CC=C1C(C=1C(=CC(=CC=1)N(C)C)C)C1=CC=C(N(C)C)C=C1C LYCNQAIOLGIAFA-UHFFFAOYSA-N 0.000 description 2
- IPRJXAGUEGOFGG-UHFFFAOYSA-N N-butylbenzenesulfonamide Chemical compound CCCCNS(=O)(=O)C1=CC=CC=C1 IPRJXAGUEGOFGG-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- 239000012965 benzophenone Substances 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 2
- 238000011088 calibration curve Methods 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
- JQCXWCOOWVGKMT-UHFFFAOYSA-N diheptyl phthalate Chemical compound CCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCC JQCXWCOOWVGKMT-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 125000001841 imino group Chemical group [H]N=* 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 125000002950 monocyclic group Chemical group 0.000 description 2
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 125000003367 polycyclic group Chemical group 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229910000027 potassium carbonate Inorganic materials 0.000 description 2
- XTFKWYDMKGAZKK-UHFFFAOYSA-N potassium;gold(1+);dicyanide Chemical compound [K+].[Au+].N#[C-].N#[C-] XTFKWYDMKGAZKK-UHFFFAOYSA-N 0.000 description 2
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229920001897 terpolymer Polymers 0.000 description 2
- 238000004448 titration Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- KFJJYOKMAAQFHC-UHFFFAOYSA-N (4-methoxy-5,5-dimethylcyclohexa-1,3-dien-1-yl)-phenylmethanone Chemical compound C1C(C)(C)C(OC)=CC=C1C(=O)C1=CC=CC=C1 KFJJYOKMAAQFHC-UHFFFAOYSA-N 0.000 description 1
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 1
- DLUPHJKQEIIYAM-UHFFFAOYSA-N 1-(2-ethoxyphenyl)-2-hydroxy-2-phenylethanone Chemical compound CCOC1=CC=CC=C1C(=O)C(O)C1=CC=CC=C1 DLUPHJKQEIIYAM-UHFFFAOYSA-N 0.000 description 1
- MLKIVXXYTZKNMI-UHFFFAOYSA-N 1-(4-dodecylphenyl)-2-hydroxy-2-methylpropan-1-one Chemical compound CCCCCCCCCCCCC1=CC=C(C(=O)C(C)(C)O)C=C1 MLKIVXXYTZKNMI-UHFFFAOYSA-N 0.000 description 1
- IMDHDEPPVWETOI-UHFFFAOYSA-N 1-(4-tert-butylphenyl)-2,2,2-trichloroethanone Chemical group CC(C)(C)C1=CC=C(C(=O)C(Cl)(Cl)Cl)C=C1 IMDHDEPPVWETOI-UHFFFAOYSA-N 0.000 description 1
- VMCRQYHCDSXNLW-UHFFFAOYSA-N 1-(4-tert-butylphenyl)-2,2-dichloroethanone Chemical group CC(C)(C)C1=CC=C(C(=O)C(Cl)Cl)C=C1 VMCRQYHCDSXNLW-UHFFFAOYSA-N 0.000 description 1
- HUDYANRNMZDQGA-UHFFFAOYSA-N 1-[4-(dimethylamino)phenyl]ethanone Chemical group CN(C)C1=CC=C(C(C)=O)C=C1 HUDYANRNMZDQGA-UHFFFAOYSA-N 0.000 description 1
- VKQJCUYEEABXNK-UHFFFAOYSA-N 1-chloro-4-propoxythioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C(OCCC)=CC=C2Cl VKQJCUYEEABXNK-UHFFFAOYSA-N 0.000 description 1
- 125000006218 1-ethylbutyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 1
- PIZHFBODNLEQBL-UHFFFAOYSA-N 2,2-diethoxy-1-phenylethanone Chemical compound CCOC(OCC)C(=O)C1=CC=CC=C1 PIZHFBODNLEQBL-UHFFFAOYSA-N 0.000 description 1
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 1
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 1
- LCHAFMWSFCONOO-UHFFFAOYSA-N 2,4-dimethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC(C)=C3SC2=C1 LCHAFMWSFCONOO-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/06—Hydrocarbons
- C08F212/08—Styrene
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- C—CHEMISTRY; METALLURGY
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- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/04—Acids; Metal salts or ammonium salts thereof
- C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
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- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
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- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
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Abstract
Description
本揭露內容是關於一種光敏樹脂組成物以及使用其的乾膜式光阻、光敏元件、電路板與顯示裝置。 The present disclosure relates to a photosensitive resin composition and a dry film photoresist, a photosensitive element, a circuit board and a display device using the same.
光敏樹脂組成物以乾膜式光阻(dry film photoresist;DFR)、液態光阻油墨或類似物的形式使用且用於印刷電路板(printed circuit board;PCB)或引線框。 The photosensitive resin composition is used in the form of dry film photoresist (DFR), liquid photoresist ink, or the like and used for printed circuit boards (PCBs) or lead frames.
當前,乾膜式光阻不僅廣泛用於製造印刷電路板(PCB)及引線框,且亦用於製造電漿顯示面板(plasma display panels;PDP)的肋障壁、其他顯示器的ITO電極、匯流排定址電極、黑矩陣以及類似物。 Currently, dry film photoresist is widely used not only in the manufacture of printed circuit boards (PCBs) and lead frames, but also in the manufacture of rib barriers for plasma display panels (PDPs), ITO electrodes for other displays, and bus bars. Address electrodes, black matrices, and the like.
一般而言,此類型的乾膜式光阻通常在將其層壓於包銅層板上的應用中。與此相關,作為印刷電路板(PCB)的製造製程的一實例,首先執行預處理製程以便層壓包銅層板,其為PCB的原始平板材料。在外部層製程中以鑽孔、去毛刺、表面調節以及類似者的次序執行預處理製程,且在內部層製程中執行表面調節或 浸洗。在表面調節中,主要使用刷毛刷製程及噴氣浮石(jet pumice)製程且浸洗可經歷軟性蝕刻及5重量%硫酸浸洗。 In general, dry film photoresists of this type are commonly used in applications where they are laminated to copper clad laminates. In relation to this, as an example of a manufacturing process of a printed circuit board (PCB), a pre-processing process is first performed to laminate a copper clad laminate, which is the original plate material of the PCB. The pretreatment process is performed in the order of drilling, deburring, surface conditioning and the like in the outer layer process, and the surface conditioning or the like is performed in the inner layer process Dip. In surface conditioning, a bristle brush process and a jet pumice process are mainly used and the dip may undergo soft etching and 5 wt% sulfuric acid dip.
為了在已進行預處理製程的包銅層板上形成電路,一般將乾膜式光阻(下文中稱為DFR)層壓於包銅層板的銅層上。在此製程中,將DFR的光阻層層壓於銅表面上,同時使用層壓機剝除DFR的保護膜。一般而言,以0.5公尺/分鐘至3.5公尺/分鐘的速度,100℃至130℃的溫度以及10磅/平方吋至90磅/平方吋的加熱輥壓力執行層壓。 In order to form circuits on the copper-clad laminate that has undergone the pretreatment process, a dry film photoresist (hereinafter referred to as DFR) is generally laminated on the copper layer of the copper-clad laminate. In this process, the photoresist layer of the DFR is laminated on the copper surface, while the protective film of the DFR is stripped off using a laminator. Generally, lamination is performed at a speed of 0.5 to 3.5 m/min, a temperature of 100°C to 130°C, and a heated roll pressure of 10 psi to 90 psi.
使已進行層壓製程的印刷電路板靜置15分鐘或大於15分鐘以穩定所述板,且接著經由其上形成所需電路圖案的光罩曝光DFR的光阻。當光罩在此製程中經紫外線照射時,經紫外線照射的光阻藉由經照射部分中所含有的光起始劑開始聚合。首先,消耗光阻中的氧,且接著使活化的單體聚合以引起交聯反應。此後,在消耗大量單體的同時,聚合反應繼續進行。同時,未曝光部分以尚未進行交聯反應的狀態存在。 The printed circuit board that has undergone the lamination process is allowed to stand for 15 minutes or more to stabilize the board, and then the photoresist of the DFR is exposed through a reticle on which the desired circuit pattern is formed. When the photomask is irradiated with UV light in this process, the photoresist irradiated with UV light starts to polymerize by the photoinitiator contained in the irradiated portion. First, the oxygen in the photoresist is consumed, and then the activated monomer is polymerized to cause a crosslinking reaction. Thereafter, the polymerization reaction proceeds while consuming a large amount of monomers. Meanwhile, the unexposed portion exists in a state in which the cross-linking reaction has not yet proceeded.
接著,執行移除光阻的未曝光部分的顯影製程。在鹼性可顯影DFR的情況下,0.8重量至1.2重量碳酸鉀及碳酸鈉的水溶液用作顯影劑溶液。在此製程中,藉由黏合劑聚合物的羧酸與顯影劑溶液之間的皂化反應來洗滌掉未曝光部分中的光阻,且固化光阻保留於銅表面上。 Next, a development process for removing the unexposed portion of the photoresist is performed. In the case of alkaline developable DFR, an aqueous solution of 0.8 to 1.2 wt. potassium carbonate and sodium carbonate is used as the developer solution. In this process, the photoresist in the unexposed portions is washed away by a saponification reaction between the carboxylic acid of the binder polymer and the developer solution, and the cured photoresist remains on the copper surface.
接著,取決於內部層製程及外部層製程,經由不同製程形成電路。然而,在內部層製程中,經由蝕刻製程及剝離製程在板上形成電路,且在外部層製程中,執行電鍍製程及隆起製程(tenting process),隨後執行蝕刻及焊料剝離以形成預定電路。 Then, depending on the inner layer process and the outer layer process, circuits are formed through different processes. However, in the inner layer process, a circuit is formed on the board through an etching process and a lift-off process, and in the outer layer process, a plating process and a tenting process are performed, followed by etching and solder stripping to form a predetermined circuit.
同時,在進行電鍍的製程中,當乾膜的耐電鍍性不足時,存在由於高pH而產生氣泡或使固化光阻脫離或損耗的問題。特定言之,由於ENIG電鍍製程的鍍鎳期間產生的氣泡而使固化光阻脫離或損耗是常見的。 Meanwhile, in the process of electroplating, when the electroplating resistance of the dry film is insufficient, there is a problem that air bubbles are generated due to high pH or the cured photoresist is detached or lost. In particular, it is common for cured photoresist to detach or wear out due to air bubbles generated during nickel plating of the ENIG electroplating process.
因此,對具有提高的耐電鍍性的乾膜的需求不斷增加。 Accordingly, there is an increasing demand for dry films with improved plating resistance.
本揭露內容的目標是提供一種能夠在圖案電鍍期間減少凹穴且實現高解析度圖案的光敏樹脂組成物。 An object of the present disclosure is to provide a photosensitive resin composition capable of reducing cavities and realizing high-resolution patterns during pattern plating.
本揭露內容的另一目標是提供一種可達成25微米或小於25微米的優異1:1解析度同時達成提高的耐電鍍性的光敏樹脂組成物。 Another object of the present disclosure is to provide a photosensitive resin composition that can achieve an excellent 1:1 resolution of 25 microns or less while achieving improved plating resistance.
本揭露內容的另一目標是提供使用光敏樹脂組成物的乾膜式光阻、光敏元件、電路板與顯示裝置。 Another object of the present disclosure is to provide a dry film photoresist, a photosensitive element, a circuit board and a display device using the photosensitive resin composition.
為達成上述目標,本文提供一種光敏樹脂組成物,包含:包含由以下化學式1表示的重複單元、由以下化學式2表示的重複單元、由以下化學式3表示的重複單元以及由以下化學式4表示的重複單元的鹼性可顯影黏合劑樹脂;光聚合起始劑;以及光可聚合化合物,其中光敏樹脂組成物滿足以下(a)或(b)中的任一者: (a)對於經由曝光及顯影含有光敏樹脂組成物的光敏樹脂層獲得的抗蝕劑圖案,在相互鄰接的光敏樹脂層線之間的空間中,殘留於底表面上的抗蝕劑殘餘物的最大足長度為1微米或小於1微 米,或 (b)對於其中將含有光敏樹脂組成物的光敏樹脂層層壓於基板上的膜樣本,當用含有鎳的水溶液進行鍍鎳20分鐘或大於20分鐘時,由以下等式1定義的黏著力為90%或大於90%。 In order to achieve the above object, a photosensitive resin composition is provided herein, comprising: a repeating unit represented by the following Chemical Formula 1, a repeating unit represented by the following Chemical Formula 2, a repeating unit represented by the following Chemical Formula 3 and a repeating unit represented by the following Chemical Formula 4 Alkali-developable binder resin of unit; photopolymerization initiator; and photopolymerizable compound, wherein the photosensitive resin composition satisfies any one of the following (a) or (b): (a) For a resist pattern obtained by exposing and developing a photosensitive resin layer containing a photosensitive resin composition, the amount of the resist residue remaining on the bottom surface in the space between the lines of the photosensitive resin layer adjacent to each other Maximum foot length of 1 micron or less meters, or (b) For a film sample in which a photosensitive resin layer containing a photosensitive resin composition is laminated on a substrate, when nickel plating is performed with an aqueous solution containing nickel for 20 minutes or more, the adhesive force defined by the following Equation 1 90% or more.
[等式1]黏著力(%)=(鍍鎳之後含有光敏樹脂組成物的光敏樹脂層與基板接觸的表面積/鍍鎳之前含有光敏樹脂組成物的光敏樹脂層與基板接觸的表面積)×100,
在化學式1中,R1為氫或具有1個至10個碳原子的烷基,R2為具有1個至10個碳原子的伸烷基,Ar為具有6個至20個碳原子的芳基,以及n為1至20的整數,
在化學式2中,R3為氫或具有1個至10個碳原子的烷基,
[化學式3]
在化學式3中,R4為氫或具有1個至10個碳原子的烷基,且R5為具有1個至10個碳原子的烷基,
以及在化學式4中,Ar為具有6個至20個碳原子的芳基。 And in Chemical Formula 4, Ar is an aryl group having 6 to 20 carbon atoms.
本文亦提供一種乾膜式光阻,包含含有光敏樹脂組成物的光敏樹脂層。 Also provided herein is a dry film photoresist comprising a photosensitive resin layer containing a photosensitive resin composition.
本文更提供一種光敏元件,包含聚合物基板及形成於聚合物基板上的光敏樹脂層,且滿足以下(a)或(b)中的任一者:(a)對於經由曝光及顯影光敏樹脂層獲得的抗蝕劑圖案,在相互鄰接的光敏樹脂層線之間的空間中,殘留於底表面上的抗蝕劑殘餘物的最大足長度為1微米或小於1微米,或(b)對於其中將光敏樹脂層層壓於基板上的膜樣本,當用含有鎳的水溶液進行鍍鎳20分鐘或大於20分鐘時,由以下等式3定義的黏著力為90%或大於90%。
Further provided herein is a photosensitive element comprising a polymer substrate and a photosensitive resin layer formed on the polymer substrate, and satisfying any one of the following (a) or (b): (a) for the photosensitive resin layer through exposure and development The obtained resist pattern, in the space between the mutually adjoining photosensitive resin layer lines, has a maximum foot length of the resist residue remaining on the bottom surface of 1 micrometer or less, or (b) for wherein The film sample in which the photosensitive resin layer was laminated on the substrate, when nickel-plated with an aqueous solution containing nickel for 20 minutes or more, had an adhesion force defined by the following
[等式3]黏著力(%)=(鍍鎳之後光敏元件的光敏樹脂層與基板接觸 的表面積/鍍鎳之前光敏元件的光敏樹脂層與基板接觸的表面積)×100。 [Equation 3] Adhesion (%) = (The photosensitive resin layer of the photosensitive element is in contact with the substrate after nickel plating Surface area/surface area of the photosensitive resin layer of the photosensitive element in contact with the substrate before nickel plating) × 100.
本文更提供一種電路板及一種顯示裝置,包含含有光敏樹脂組成物的光敏樹脂層。 This document further provides a circuit board and a display device, comprising a photosensitive resin layer containing a photosensitive resin composition.
在下文中,將更詳細地描述根據本揭露內容的特定實施例的光敏樹脂組成物以及使用其的乾膜式光阻、光敏元件、電路板與顯示裝置。 Hereinafter, the photosensitive resin composition and the dry film photoresist, photosensitive element, circuit board and display device using the same according to specific embodiments of the present disclosure will be described in more detail.
除非貫穿本說明書另外規定,否則本文中所使用的技術術語僅用於參考特定實施例且並不意欲限制本揭露內容。 Unless otherwise defined throughout this specification, technical terms used herein are for reference only to specific embodiments and are not intended to limit the present disclosure.
除非上下文另外明確指示,否則本文中所使用的單數形式「一(a/an)」及「所述(the)」包含多個參考。 As used herein, the singular forms "a/an" and "the (the)" include plural references unless the context clearly dictates otherwise.
本文中所使用的術語「包含」或「包括」指定特定特徵、區、整數、步驟、動作、元件及/或組分,但不排除不同特定特徵、區、整數、步驟、動作、元件、組分及/或基團的存在或添加。 The terms "comprising" or "comprising" as used herein specify particular features, regions, integers, steps, acts, elements and/or components, but do not exclude different particular features, regions, integers, steps, acts, elements, groups The presence or addition of fractions and/or groups.
此外,包含諸如「第一」、「第二」等序數的術語僅出於區分一個組分與另一組分的目的而使用,且不受序數限制。舉例而言,在不脫離本揭露內容的範疇的情況下,第一組分可稱為第二組分,或類似地,第二組分可稱為第一組分。 Furthermore, terms including ordinal numbers such as "first", "second", etc. are used only for the purpose of distinguishing one component from another and are not limited by ordinal numbers. For example, a first component could be termed a second component, or, similarly, a second component could be termed a first component, without departing from the scope of the present disclosure.
在本說明書中,下文描述取代基的實例,但不限於此。 In this specification, examples of substituents are described below, but are not limited thereto.
在本說明書中,術語「經取代」意謂鍵結化合物中代替氫原子的其他官能基,且待取代的位置不受限制,只要所述位置為氫原子經取代的位置,亦即取代基可經取代的位置,且當取代兩者或大於兩者時,兩個或大於兩個取代基可彼此相同或不同。 In the present specification, the term "substituted" means other functional groups that replace hydrogen atoms in the bonding compound, and the positions to be substituted are not limited as long as the positions are positions where hydrogen atoms are substituted, that is, the substituents may be substituted. The substituted positions, and when two or more than two substituents are substituted, may be the same or different from each other.
在本說明書中,術語「經取代或未經取代的」意謂未經取 代或經一或多個由以下所組成的族群中選出的取代基取代:氘;鹵基;氰基;硝基;羥基;羰基;酯基;醯亞胺基;醯胺基;一級胺基;羧基;磺酸基;磺醯胺基;氧化膦基團;烷氧基;芳氧基;烷基硫醇基;芳基硫醇基;烷基硫氧基;芳基硫氧基;矽基;硼基;烷基;環烷基;烯基;芳基;芳烷基;芳烯基;烷芳基;烷氧基矽基烷基;芳基膦基或含有N、O以及S原子中的至少一者的雜環基,或未經取代或經上文所例示的取代基中兩個或大於兩個取代基所連接的取代基取代。舉例而言,「兩個或大於兩個取代基所連接的取代基」可為聯苯基。亦即,聯苯基亦可為芳基,且可解釋為兩個苯基所連接的取代基。 In this specification, the term "substituted or unsubstituted" means unsubstituted Substituted or substituted with one or more substituents selected from the group consisting of: deuterium; halo; cyano; nitro; hydroxyl; carbonyl; ester; imino; imino; primary amine ; carboxyl group; sulfonic acid group; sulfonamide group; phosphine oxide group; alkoxy group; aryloxy group; alkylthiol group; arylthiol group; alkylthiooxy; arylthiooxy; silicon boryl; alkyl; cycloalkyl; alkenyl; aryl; aralkyl; aralkenyl; alkaryl; alkoxysilylalkyl; arylphosphino or containing N, O and S atoms A heterocyclyl group of at least one of, or unsubstituted or substituted with a substituent to which two or more of the substituents exemplified above are attached. For example, "a substituent to which two or more substituents are attached" can be biphenyl. That is, a biphenyl group can also be an aryl group, and can be interpreted as a substituent to which two phenyl groups are attached.
在本說明書中,符號或意謂與另一取代基連接的鍵,且直接鍵意謂其中在表示為L的部分中不存在其他原子的情況。 In this manual, the symbol or means a bond to another substituent, and a direct bond means a case where no other atoms are present in the moiety denoted L.
在本說明書中,(甲基)丙烯基意謂包含丙烯基及甲基丙烯基兩者。 In this specification, a (meth)propenyl group means that both a propenyl group and a methacryl group are included.
在本說明書中,烷基為衍生自烷烴的單價官能基,且可為直鏈或分支鏈的。直鏈烷基的碳原子數不受特別限制,但較佳為1至20。此外,分支鏈烷基的碳原子數為3至20。烷基的特定實例包含甲基、乙基、丙基、正丙基、異丙基、丁基、正丁基、異丁基、三級丁基、二級丁基、1-甲基-丁基、1-乙基-丁基、戊基、正戊基、異戊基、新戊基、三級戊基、己基、正己基、1-甲基戊基、2-甲基戊基、4-甲基-2-戊基、3,3-二甲基丁基、2-乙基丁基、庚基、正庚基、1-甲基己基、辛基、正辛基、三級辛基、1-甲基庚基、2-乙基己基、2-丙基戊基、正壬基、2,2-二甲基庚基、1-乙基-丙基、1,1- 二甲基-丙基、異己基、2-甲基戊基、4-甲基己基、5-甲基己基、2,6-二甲基庚烷-4-基以及類似基團,但不限於此。烷基可為經取代或未經取代的,且當其經取代時,取代基的實例與上文所描述的相同。 In the present specification, an alkyl group is a monovalent functional group derived from an alkane, and may be linear or branched. The number of carbon atoms of the straight-chain alkyl group is not particularly limited, but preferably 1 to 20. In addition, the branched chain alkyl group has 3 to 20 carbon atoms. Specific examples of alkyl groups include methyl, ethyl, propyl, n-propyl, isopropyl, butyl, n-butyl, isobutyl, tertiary butyl, tertiary butyl, 1-methyl-butyl , 1-ethyl-butyl, pentyl, n-pentyl, isopentyl, neopentyl, tertiary pentyl, hexyl, n-hexyl, 1-methylpentyl, 2-methylpentyl, 4 -Methyl-2-pentyl, 3,3-dimethylbutyl, 2-ethylbutyl, heptyl, n-heptyl, 1-methylhexyl, octyl, n-octyl, tertiary octyl , 1-methylheptyl, 2-ethylhexyl, 2-propylpentyl, n-nonyl, 2,2-dimethylheptyl, 1-ethyl-propyl, 1,1- Dimethyl-propyl, isohexyl, 2-methylpentyl, 4-methylhexyl, 5-methylhexyl, 2,6-dimethylheptan-4-yl and the like, but not limited to this. Alkyl groups can be substituted or unsubstituted, and when they are substituted, examples of substituents are the same as described above.
在本說明書中,芳基為衍生自芳烴的單價官能基,且不受特別限制,但較佳具有6個至20個碳原子,且可為單環芳基或多環芳基。單環芳基的特定實例可包含苯基、聯苯基、聯三苯基(terphenyl group)以及類似基團,但不限於此。多環芳基的特定實例可包含萘基(naphthyl group)、蒽基(anthracenyl group)、菲基(phenanthryl group)、芘基(pyrenyl group)、苝基(perylenyl group)、屈基(chrysenyl group)、芴基(fluorenyl group)以及類似基團,但不限於此。芳基可為經取代或未經取代的,且當其經取代時,取代基的實例與上文所描述的相同。 In the present specification, the aryl group is a monovalent functional group derived from an aromatic hydrocarbon, and is not particularly limited, but preferably has 6 to 20 carbon atoms, and may be a monocyclic aryl group or a polycyclic aryl group. Specific examples of monocyclic aryl groups may include, but are not limited to, phenyl, biphenyl, terphenyl groups, and the like. Specific examples of polycyclic aryl groups may include naphthyl group, anthracenyl group, phenanthryl group, pyrenyl group, perylenyl group, chrysenyl group , fluorenyl group and similar groups, but not limited thereto. The aryl group can be substituted or unsubstituted, and when it is substituted, examples of substituents are the same as described above.
在下文中,將更詳細地描述本揭露內容。 In the following, the present disclosure will be described in more detail.
1.光敏樹脂組成物.1. Photosensitive resin composition.
根據本揭露內容的一個實施例,可提供一種光敏樹脂組成物,包含:包含由以下化學式1表示的重複單元、由以下化學式2表示的重複單元、由以下化學式3表示的重複單元以及由以下化學式4表示的重複單元的鹼性可顯影黏合劑樹脂;光聚合起始劑;以及光可聚合化合物,其中光敏樹脂組成物滿足以下(a)或(b)中的任一者:
(a)對於經由曝光及顯影含有光敏樹脂組成物的光敏樹脂層獲得的抗蝕劑圖案,在相互鄰接的光敏樹脂層線之間的空間中,殘留於底表面上的抗蝕劑殘餘物的最大足長度為1微米或小於1微
米,或
(b)對於其中將含有光敏樹脂組成物的光敏樹脂層層壓於基板上的膜樣本,當用含有鎳的水溶液進行鍍鎳20分鐘或大於20分鐘時,由以下等式1定義的黏著力為90%或大於90%。
According to one embodiment of the present disclosure, there can be provided a photosensitive resin composition comprising: a repeating unit represented by the following Chemical Formula 1, a repeating unit represented by the following Chemical Formula 2, a repeating unit represented by the following
[等式1]黏著力(%)=(鍍鎳之後含有光敏樹脂組成物的光敏樹脂層與基板接觸的表面積/鍍鎳之前含有光敏樹脂組成物的光敏樹脂層與基板接觸的表面積)×100,
在化學式1中,R1為氫或具有1個至10個碳原子的烷基,R2為具有1個至10個碳原子的伸烷基,Ar為具有6個至20個碳原子的芳基,以及n為1至20的整數,
在化學式2中,R3為氫或具有1個至10個碳原子的烷基,
[化學式3]
在化學式3中,R4為氫或具有1個至10個碳原子的烷基,且R5為具有1個至10個碳原子的烷基,以及
在化學式4中,Ar為具有6個至20個碳原子的芳基。 In Chemical Formula 4, Ar is an aryl group having 6 to 20 carbon atoms.
本發明人經由實驗發現,一個實施例的光敏樹脂組成物在鹼性可顯影黏合劑樹脂中含有由化學式1表示的重複單元,使得在使用光敏樹脂組成物經由曝光及顯影乾膜式光阻形成圖案時,抗蝕劑殘餘物的長度可在抗蝕劑殘餘物的下端部分處最小化,因此實現具有高解析度的精細圖案且完成本揭露內容。 The inventors have found through experiments that the photosensitive resin composition of one embodiment contains repeating units represented by Chemical Formula 1 in the alkali-developable binder resin, so that the photosensitive resin composition is formed by exposing and developing a dry film photoresist using the photosensitive resin composition. When patterning, the length of the resist residue can be minimized at the lower end portion of the resist residue, thus realizing a fine pattern with high resolution and completing the present disclosure.
此外,本發明人經由實驗發現,由於一個實施例的光敏樹脂組成物在鹼性可顯影黏合劑樹脂中含有由化學式1表示的重複單元以提高鹼性可顯影黏合劑樹脂的耐電鍍性,因此由於氫氣泡所致的脫離現象可在使用光敏樹脂組成物的乾膜式光阻的鍍鎳期間最小化,且完成本揭露內容。 In addition, the present inventors found through experiments that since the photosensitive resin composition of one embodiment contains a repeating unit represented by Chemical Formula 1 in the alkali-developable adhesive resin to improve the electroplating resistance of the alkali-developable adhesive resin, therefore The detachment phenomenon due to hydrogen bubbles can be minimized during nickel plating of a dry film photoresist using a photosensitive resin composition, and the present disclosure is completed.
(1)鹼性可顯影黏合劑樹脂 (1) Alkaline developable binder resin
本揭露內容的鹼性可顯影黏合劑樹脂可包含:由化學式1
表示的重複單元、由化學式2表示的重複單元、由化學式3表示的重複單元以及由化學式4表示的重複單元。
The alkali-developable binder resin of the present disclosure may include: by Chemical Formula 1
The repeating unit represented by Chemical Formula 2, the repeating unit represented by
具體言之,鹼性可顯影黏合劑樹脂可包含由化學式1表示的重複單元、由化學式2表示的重複單元、由化學式3表示的重複單元以及由化學式4表示的重複單元的無規共聚物。
Specifically, the alkali developable binder resin may include a random copolymer of the repeating unit represented by Chemical Formula 1, the repeating unit represented by Chemical Formula 2, the repeating unit represented by
由於由化學式1表示的重複單元含於鹼性可顯影黏合劑樹脂中以藉此增大鹼性可顯影黏合劑樹脂的疏水度,因此其抑制在使用光敏樹脂組成物的乾膜式光阻的顯影製程中泡沫的產生,且因此展現優異的顯影特性且有可能改善基板黏著性且因此確保適當的物理特性(解析度、細線黏著性等)。 Since the repeating unit represented by Chemical Formula 1 is contained in the alkali-developable binder resin to thereby increase the hydrophobicity of the alkali-developable binder resin, it inhibits the use of a dry film type photoresist using a photosensitive resin composition. Foam is generated during the development process, and thus exhibits excellent development properties and has the potential to improve substrate adhesion and thus ensure proper physical properties (resolution, fine line adhesion, etc.).
在化學式1中,R1可為氫或具有1個至10個碳原子的烷基中的任一者,且具有1個至10個碳原子的烷基的特定實例可包含甲基。 In Chemical Formula 1, R 1 may be any one of hydrogen or an alkyl group having 1 to 10 carbon atoms, and specific examples of the alkyl group having 1 to 10 carbon atoms may include a methyl group.
在化學式1中,R2為具有1個至10個碳原子的伸烷基,且具有1個至10個碳原子的伸烷基的特定實例可包含伸乙基。 In Chemical Formula 1, R 2 is an alkylene group having 1 to 10 carbon atoms, and specific examples of the alkylene group having 1 to 10 carbon atoms may include an ethylene group.
在化學式1中,Ar為具有6個至20個碳原子的芳基,且具有6個至20個碳原子的芳基的特定實例可為苯基。 In Chemical Formula 1, Ar is an aryl group having 6 to 20 carbon atoms, and a specific example of the aryl group having 6 to 20 carbon atoms may be a phenyl group.
由化學式1表示的重複單元可為衍生自由以下化學式1-1表示的單體的重複單元。 The repeating unit represented by Chemical Formula 1 may be a repeating unit derived from a monomer represented by the following Chemical Formula 1-1.
在化學式1-1中,R1為氫或具有1個至10個碳原子的烷基,R2為具有1個至10個碳原子的伸烷基,Ar為具有6個至20個碳原子的芳基,以及n為1至20的整數。在化學式1-1中,R1、R2、Ar以及n的定義與針對化學式1所描述的相同。 In Chemical Formula 1-1, R 1 is hydrogen or an alkyl group having 1 to 10 carbon atoms, R 2 is an alkylene group having 1 to 10 carbon atoms, and Ar is an alkylene group having 6 to 20 carbon atoms , and n is an integer from 1 to 20. In Chemical Formula 1-1, the definitions of R 1 , R 2 , Ar and n are the same as those described for Chemical Formula 1.
由化學式1-1表示的單體的特定實例可包含苯氧基聚氧乙烯丙烯酸酯,更具體言之,甲基丙烯酸2-苯氧基乙酯(PHEMA)。 Specific examples of the monomer represented by Chemical Formula 1-1 may include phenoxypolyoxyethylene acrylate, more specifically, 2-phenoxyethyl methacrylate (PHEMA).
按鹼性可顯影黏合劑樹脂中所含有的總重複單元為100莫耳%計,可含有的由化學式1表示的重複單元的量為5莫耳%或大於5莫耳%且40莫耳%或小於40莫耳%、5莫耳%或大於5莫耳%且30莫耳%或小於30莫耳%、5莫耳%或大於5莫耳%且25莫耳%或小於25莫耳%或10莫耳%或大於10莫耳%且25莫耳%或小於25莫耳%。 The repeating unit represented by Chemical Formula 1 may be contained in an amount of 5 mol % or more and 40 mol % based on 100 mol % of the total repeating units contained in the alkali-developable binder resin or less than 40 mol%, 5 mol% or more than 5 mol% and 30 mol% or less than 30 mol%, 5 mol% or more than 5 mol% and 25 mol% or less than 25 mol% or 10 mol% or more and 25 mol% or less.
在化學式2至化學式4中,R3與R4彼此相同或不同且各自獨立地為氫或具有1個至10個碳原子的烷基,R5為具有1個至10個碳原子的烷基以及Ar為具有6個至20個碳原子的芳基。 In Chemical Formula 2 to Chemical Formula 4, R 3 and R 4 are the same or different from each other and are each independently hydrogen or an alkyl group having 1 to 10 carbon atoms, and R 5 is an alkyl group having 1 to 10 carbon atoms And Ar is an aryl group having 6 to 20 carbon atoms.
在化學式2至化學式4中,R3與R4彼此相同或不同且可各自獨立為氫或具有1個至10個碳原子的烷基中的任一者,且具有1個至10個碳原子的烷基的特定實例可包含甲基。 In Chemical Formula 2 to Chemical Formula 4, R 3 and R 4 are the same as or different from each other and may each independently be any one of hydrogen or an alkyl group having 1 to 10 carbon atoms, and having 1 to 10 carbon atoms Particular examples of alkyl groups can include methyl groups.
R5為具有1個至10個碳原子的烷基,且具有1個至10個碳原子的烷基的特定實例可包含甲基。 R 5 is an alkyl group having 1 to 10 carbon atoms, and specific examples of the alkyl group having 1 to 10 carbon atoms may include a methyl group.
Ar為具有6個至20個碳原子的芳基,且具有6個至20個碳原子的芳基的特定實例可包含苯基。 Ar is an aryl group having 6 to 20 carbon atoms, and specific examples of the aryl group having 6 to 20 carbon atoms may include a phenyl group.
由化學式2表示的重複單元可為衍生自由以下化學式2-1表示的單體的重複單元。 The repeating unit represented by Chemical Formula 2 may be a repeating unit derived from a monomer represented by the following Chemical Formula 2-1.
在化學式2-1中,R3為氫或具有1個至10個碳原子的烷基。在化學式2-1中,R3與上文針對化學式2所描述的相同。由化學式2-1表示的單體的特定實例可包含甲基丙烯酸(methacrylic acid;MAA)。 In Chemical Formula 2-1, R 3 is hydrogen or an alkyl group having 1 to 10 carbon atoms. In Chemical Formula 2-1, R 3 is the same as described above for Chemical Formula 2. Specific examples of the monomer represented by Chemical Formula 2-1 may include methacrylic acid (MAA).
由化學式3表示的重複單元可為衍生自由以下化學式3-1表示的單體的重複單元。
The repeating unit represented by
在化學式3-1中,R4為氫或具有1個至10個碳原子的烷基,且R5為具有1個至10個碳原子的烷基。在化學式3-1中,R4及R5的含量與上文針對化學式3所描述的相同。由化學式3-1表示的單體的特定實例可包含甲基丙烯酸甲酯(methyl methacrylate;MMA)。
In Chemical Formula 3-1, R 4 is hydrogen or an alkyl group having 1 to 10 carbon atoms, and R 5 is an alkyl group having 1 to 10 carbon atoms. In Chemical Formula 3-1, the contents of R 4 and R 5 are the same as described above for
由化學式4表示的重複單元可包含衍生自由以下化學式4-1表示的單體的重複單元。 The repeating unit represented by Chemical Formula 4 may include a repeating unit derived from a monomer represented by the following Chemical Formula 4-1.
[化學式4-1]
在化學式4-1中,Ar為具有6個至20個碳原子的芳基。在化學式4-1中,Ar的含量與上文針對化學式4所描述的相同。由化學式4-1表示的單體的特定實例可包含苯乙烯(styrene;SM)。 In Chemical Formula 4-1, Ar is an aryl group having 6 to 20 carbon atoms. In Chemical Formula 4-1, the content of Ar is the same as that described above for Chemical Formula 4. Specific examples of the monomer represented by Chemical Formula 4-1 may include styrene (SM).
按鹼性可顯影黏合劑樹脂中所含有的總重複單元為100莫耳%計,鹼性可顯影黏合劑樹脂可含有20莫耳%或大於20莫耳%且60莫耳%或小於60莫耳%、20莫耳%或大於20莫耳%且50莫耳%或小於50莫耳%或30莫耳%或大於30莫耳%且40莫耳%或小於40莫耳%的由化學式2表示的重複單元。 The alkaline developable binder resin may contain 20 mol % or more and 60 mol % or less, based on 100 mol % of the total repeating units contained in the alkali developable binder resin %, 20 mol% or greater than 20 mol% and 50 mol% or less than 50 mol% or 30 mol% or greater than 30 mol% and 40 mol% or less than 40 mol% by Chemical formula 2 Represents a repeating unit.
此外,按鹼性可顯影黏合劑樹脂中所含有的總重複單元為100莫耳%計,鹼性可顯影黏合劑樹脂可含有1莫耳%或大於1莫耳%且30莫耳%或小於30莫耳%或5莫耳%或大於5莫耳%且30莫耳%或小於30莫耳%的由化學式3表示的重複單元,及30莫耳%或大於30莫耳%且60莫耳%或小於60莫耳%、30莫耳%或大於30莫耳%且50莫耳%或小於50莫耳%或30莫耳%或大於30莫耳%且40莫耳%或小於40莫耳%的由化學式4表示的重複單元。
In addition, the alkaline developable binder resin may contain 1 mol % or more and 30 mol % or less based on 100 mol % of the total repeating units contained in the alkali developable binder resin 30 mol % or 5 mol % or more and 30 mol % or less of the repeating unit represented by
更具體言之,由化學式3表示的重複單元相對於100莫耳由化學式4表示的重複單元的莫耳比可為10莫耳或大於10莫耳且99莫耳或小於99莫耳、15莫耳或大於15莫耳且95莫耳或小於95莫耳或20莫耳或大於20莫耳且95莫耳或小於95莫耳。
More specifically, the molar ratio of the repeating unit represented by
因而,由於具有疏水性的由化學式4表示的重複單元的含量增加,鹼性可顯影黏合劑樹脂的疏水度亦增大,由此抑制在使用光敏樹脂組成物的乾膜式光阻的顯影製程中泡沫的產生。 Thus, as the content of the repeating unit represented by Chemical Formula 4 having hydrophobicity increases, the degree of hydrophobicity of the alkali-developable binder resin also increases, thereby inhibiting the development process of the dry film type photoresist using the photosensitive resin composition generation of bubbles.
鹼性可顯影黏合劑樹脂可具有30,000公克/莫耳或大於30,000公克/莫耳且150,000公克/莫耳或小於150,000公克/莫耳的重均分子量及20℃或大於20℃且150℃或小於150℃的玻璃轉移溫度。由此,可改善乾膜式光阻的塗佈特性及可追蹤性(followability)以及電路形成之後的抗蝕劑自身的機械強度。 The alkaline developable binder resin may have a weight average molecular weight of 30,000 g/mol or more and 150,000 g/mol or less and 20°C or more and 150°C or less Glass transition temperature of 150°C. Thereby, the coating characteristics and followability of the dry film type photoresist and the mechanical strength of the resist itself after circuit formation can be improved.
如本文中所使用,重均分子量是指藉由凝膠滲透層析(gel permeation chromatography;GPC)量測的聚苯乙烯轉化的重均分子量。在藉由GPC量測的聚苯乙烯轉化的重均分子量的製程中,可使用偵測器及分析型管柱,諸如通常已知的分析設備及差示折射率偵測器,且可使用通常應用的溫度條件、溶劑以及流動速率。 As used herein, weight average molecular weight refers to polystyrene converted weight average molecular weight as measured by gel permeation chromatography (GPC). In the process of measuring polystyrene-converted weight average molecular weight by GPC, detectors and analytical columns such as commonly known analytical equipment and differential refractive index detectors can be used, and commonly used The temperature conditions, solvents, and flow rates of the application.
量測條件的特定實例如下。將鹼性可顯影黏合劑樹脂溶解於四氫呋喃中從而以具有THF中1.0(重量/重量)%的濃度(按固體含量計約0.5(重量/重量)%),使用孔徑為0.45微米的針筒過濾器過濾且接著以20微升的量注射至GPC中,且四氫呋喃(tetrahydrofuran;THF)用作GPC的行動相且流動速率為1.0毫升/分鐘。管柱經組態有串聯連接的一個安捷倫(Agilent)Plagal 5微米保護件(7.5×50毫米)及兩個安捷倫Plagal 5微米Mixed D(7.5×300毫米),且在40℃下藉由使用安捷倫1260無限II系統以及RI偵測器執行量測。 Specific examples of measurement conditions are as follows. The alkaline developable binder resin was dissolved in tetrahydrofuran to have a concentration of 1.0 (w/w) % in THF (approximately 0.5 (w/w) % by solids), filtered using a 0.45 micron pore size syringe was filtered and then injected into GPC in an amount of 20 microliters, and tetrahydrofuran (THF) was used as the mobile phase of GPC and the flow rate was 1.0 mL/min. The column was configured with one Agilent Plagal 5-micron guard (7.5 x 50 mm) and two Agilent Plagal 5-micron Mixed D (7.5 x 300 mm) connected in series and stored at 40°C by using an Agilent The 1260 Infinity II system and RI detector perform the measurements.
經由孔徑為0.45微米的針筒過濾器過濾其中將具有各種分子量的聚苯乙烯溶解於濃度為0.1(重量/重量)%的四氫呋喃中的聚苯乙烯標準樣本(STD A、STD B、STD C、STD D)且接著注射至GPC中,且使用校準曲線測定鹼性可顯影黏合劑樹脂的重均分子量(Mw)的值。 Polystyrene standard samples (STD A, STD B, STD C, STD D) and then injected into GPC, and the value of the weight average molecular weight (Mw) of the alkaline developable binder resin was determined using a calibration curve.
STD A(MP):791,000/27,810/945 STD A (MP): 791,000/27,810/945
STD B(MP):282,000/10,700/580 STD B(MP): 282,000/10,700/580
STD C(MP):126,000/4430/370 STD C(MP): 126,000/4430/370
STD D(MP):51,200/1920/162 STD D(MP): 51,200/1920/162
藉由差示掃描量熱計(Differential Scanning Calorimeter;DSC)(珀金埃爾默公司(Perkin-Elmer),DSC-7)比較參考物與黏合劑聚合物的玻璃轉移溫度。可藉由將溫度維持在20℃下15分鐘且接著以1℃/分鐘的速率將溫度升高至200℃來執行量測。 The glass transition temperatures of the reference and binder polymers were compared by a Differential Scanning Calorimeter (DSC) (Perkin-Elmer, DSC-7). Measurements can be performed by maintaining the temperature at 20°C for 15 minutes and then increasing the temperature to 200°C at a rate of 1°C/minute.
鹼性可顯影黏合劑樹脂可具有120毫克KOH/公克或大於120毫克KOH/公克且200毫克KOH/公克或小於200毫克KOH/公克或140毫克KOH/公克或大於140毫克KOH/公克且160毫克KOH/公克或小於160毫克KOH/公克的酸值。藉由以下製程量測酸值:取樣約1公克鹼性可顯影黏合劑樹脂,溶解於50毫升混合溶劑(MeOH 20%、丙酮80%)中,向其中添加兩滴1%酚酞指示劑,且接著用0.1N-KOH滴定來量測酸值。 Alkaline developable binder resins may have 120 mg KOH/gram or greater than 120 mg KOH/gram and 200 mg KOH/gram or less than 200 mg KOH/gram or 140 mg KOH/gram or greater than 140 mg KOH/gram and 160 mg Acid value of KOH/gram or less than 160 mg KOH/gram. Measure the acid value by the following procedure: sample about 1 gram of alkaline developable binder resin, dissolve it in 50 ml of mixed solvent (MeOH 20%, acetone 80%), add two drops of 1% phenolphthalein indicator to it, and The acid value was then measured by titration with 0.1N-KOH.
按固體含量計,所含有的鹼性可顯影黏合劑樹脂的量為相對於光敏樹脂組成物的總重量的20重量%或大於20重量%且80重量%或小於80重量%。當鹼性可顯影黏合劑樹脂的含量在上述範圍內時,有可能獲得在電路形成之後增強細線黏著的效果。按重量計的固體含量意謂自光敏樹脂組成物排除溶劑的剩餘組分。 The alkali-developable binder resin is contained in an amount of 20 wt % or more and 80 wt % or less with respect to the total weight of the photosensitive resin composition in terms of solid content. When the content of the alkali-developable binder resin is within the above-mentioned range, it is possible to obtain the effect of enhancing the adhesion of fine lines after circuit formation. The solid content by weight means the remaining components excluding the solvent from the photosensitive resin composition.
本揭露內容的鹼性可顯影黏合劑樹脂的含量可為相對於光敏樹脂組成物的總重量的40重量%或大於40重量%且70重量%或小於70重量%。當鹼性可顯影黏合劑樹脂的含量小於相對於總光敏樹脂組成物的40重量%時,存在由於顯影中的污染而導致 諸如短路的缺陷的缺點,且當鹼性可顯影黏合劑樹脂的含量超出70重量%時,存在諸如黏著力及解析度的電路特性劣化的問題。 The content of the alkaline developable binder resin of the present disclosure may be 40 wt % or more and 70 wt % or less with respect to the total weight of the photosensitive resin composition. When the content of the alkali-developable binder resin is less than 40% by weight with respect to the total photosensitive resin composition, there is a risk of contamination due to development There are disadvantages such as short circuit defects, and when the content of the alkali-developable binder resin exceeds 70% by weight, there are problems such as deterioration of circuit characteristics such as adhesion and resolution.
同時,鹼性可顯影黏合劑樹脂可更包含:包含由以下化學式13表示的重複單元、由以下化學式14表示的重複單元、由以下化學式15表示的重複單元、由以下化學式16表示的重複單元以及由以下化學式17表示的重複單元的第一鹼性可顯影黏合劑樹脂;及包含由以下化學式14表示的重複單元、由以下化學式15表示的重複單元以及由以下化學式16表示的重複單元的第二鹼性可顯影黏合劑樹脂。 Meanwhile, the alkali-developable binder resin may further include a repeating unit represented by the following Chemical Formula 13, a repeating unit represented by the following Chemical Formula 14, a repeating unit represented by the following Chemical Formula 15, a repeating unit represented by the following Chemical Formula 16, and A first alkali-developable binder resin comprising a repeating unit represented by the following Chemical Formula 17; and a second alkali-developable binder resin comprising a repeating unit represented by the following Chemical Formula 14, a repeating unit represented by the following Chemical Formula 15, and a repeating unit represented by the following Chemical Formula 16 Alkaline developable binder resin.
在化學式13中,R3"為氫,
在化學式14中,R3'為具有1個至10個碳原子的烷基,[化學式15]
在化學式15中,R4"為具有1個至10個碳原子的烷基,且R5"為具有1個至10個碳原子的烷基,
在化學式16中,Ar為具有6個至20個碳原子的芳基,
且在化學式17中,R4'為氫,以及R5'為具有1個至10個碳原子的烷基。 And in Chemical Formula 17, R 4 ' is hydrogen, and R 5 ' is an alkyl group having 1 to 10 carbon atoms.
具體言之,第一鹼性可顯影黏合劑樹脂可包含由化學式13表示的重複單元、由化學式14表示的重複單元、由化學式15 表示的重複單元、由化學式16表示的重複單元以及由化學式17表示的重複單元的無規共聚物。 Specifically, the first alkali-developable binder resin may include a repeating unit represented by Chemical Formula 13, a repeating unit represented by Chemical Formula 14, a repeating unit represented by Chemical Formula 15 A random copolymer of the repeating unit represented by Chemical Formula 16, the repeating unit represented by Chemical Formula 16, and the repeating unit represented by Chemical Formula 17.
在化學式13至化學式17中,具有1個至10個碳原子的烷基的特定實例包含甲基。 In Chemical Formula 13 to Chemical Formula 17, specific examples of the alkyl group having 1 to 10 carbon atoms include a methyl group.
Ar為具有6個至20個碳原子的芳基,且具有6個至20個碳原子的芳基的特定實例可包含苯基。 Ar is an aryl group having 6 to 20 carbon atoms, and specific examples of the aryl group having 6 to 20 carbon atoms may include a phenyl group.
由化學式14表示的重複單元可為衍生自由以下化學式14-1表示的單體的重複單元。 The repeating unit represented by Chemical Formula 14 may be a repeating unit derived from a monomer represented by the following Chemical Formula 14-1.
在化學式14-1中,R3"為具有1個至10個碳原子的烷基。在化學式14-1中,R3"的含量與上文針對化學式14所描述的相同。由化學式14-1表示的單體的特定實例可包含甲基丙烯酸(MAA)。 In Chemical Formula 14-1, R 3 " is an alkyl group having 1 to 10 carbon atoms. In Chemical Formula 14-1, the content of R 3 " is the same as described above for Chemical Formula 14. Specific examples of the monomer represented by Chemical Formula 14-1 may include methacrylic acid (MAA).
由化學式15表示的重複單元可為衍生自由以下化學式15-1表示的單體的重複單元。 The repeating unit represented by Chemical Formula 15 may be a repeating unit derived from a monomer represented by the following Chemical Formula 15-1.
在化學式15-1中,R4"為具有1個至10個碳原子的烷基, 且R5"為具有1個至10個碳原子的烷基。在化學式15-1中,R4"及R5"的定義與上文針對化學式15所描述的相同。由化學式15-1表示的單體的特定實例可包含甲基丙烯酸甲酯(MMA)。 In Chemical Formula 15-1, R 4 " is an alkyl group having 1 to 10 carbon atoms, and R 5 " is an alkyl group having 1 to 10 carbon atoms. In Chemical Formula 15-1, the definitions of R 4 " and R 5 " are the same as described above for Chemical Formula 15. Specific examples of the monomer represented by Chemical Formula 15-1 may include methyl methacrylate (MMA).
由化學式16表示的重複單元可為衍生自由以下化學式16-1表示的單體的重複單元。 The repeating unit represented by Chemical Formula 16 may be a repeating unit derived from a monomer represented by the following Chemical Formula 16-1.
在化學式16-1中,Ar為具有6個至20個碳原子的芳基。在化學式16-1中,Ar的定義與針對化學式16所描述的相同。由化學式16-1表示的單體的特定實例可包含苯乙烯(SM)。 In Chemical Formula 16-1, Ar is an aryl group having 6 to 20 carbon atoms. In Chemical Formula 16-1, the definition of Ar is the same as that described for Chemical Formula 16. Specific examples of the monomer represented by Chemical Formula 16-1 may include styrene (SM).
第一鹼性可顯影黏合劑樹脂可具有30000公克/莫耳或大於30000公克/莫耳且150000公克/莫耳或小於150000公克/莫耳的重均分子量及20℃或大於20℃且150℃或小於150℃的玻璃轉移溫度。由此,可改善乾膜式光阻的塗佈特性及可追蹤性以及電路形成之後的抗蝕劑自身的機械強度。此外,第一鹼性可顯影黏合劑樹脂可具有140毫克氫氧化鉀/公克或大於140毫克氫氧化鉀/公克且160毫克氫氧化鉀/公克或小於160毫克氫氧化鉀/公克的酸值。 The first alkaline developable binder resin may have a weight average molecular weight of 30000 g/mol or more and 150000 g/mol or less and 20°C or more and 150°C or a glass transition temperature of less than 150°C. Thereby, the coating characteristics and traceability of the dry film type photoresist and the mechanical strength of the resist itself after circuit formation can be improved. Additionally, the first alkaline developable binder resin may have an acid value of 140 mg potassium hydroxide/gram or greater and 160 mg potassium hydroxide/gram or less.
此外,第二鹼性可顯影黏合劑樹脂可具有20,000公克/莫耳或大於20,000公克/莫耳且130,000公克/莫耳或小於130,000公克/莫耳的重均分子量及30℃或大於30℃且160℃或小於160℃的玻璃轉移溫度。由此,可改善乾膜式光阻的塗佈特性及可追蹤性以及電路形成之後的抗蝕劑自身的機械強度。 In addition, the second alkaline developable binder resin may have a weight average molecular weight of 20,000 g/mol or more and 130,000 g/mol or less and 30°C or more and A glass transition temperature of 160°C or less. Thereby, the coating characteristics and traceability of the dry film type photoresist and the mechanical strength of the resist itself after circuit formation can be improved.
如本文中所使用,重均分子量是指藉由凝膠滲透層析 (GPC)量測的聚苯乙烯轉化的重均分子量。在藉由GPC量測聚苯乙烯轉化的重均分子量的製程中,可使用偵測器及分析型管柱,諸如通常已知的分析設備及差示折射率偵測器,且可使用通常應用的溫度條件、溶劑以及流動速率。 As used herein, weight average molecular weight refers to the (GPC) Measured weight average molecular weight of polystyrene converted. In the process of measuring the weight average molecular weight of polystyrene conversion by GPC, detectors and analytical columns, such as commonly known analytical equipment and differential refractive index detectors, can be used, and commonly applied temperature conditions, solvents, and flow rates.
量測條件的特定實例如下。將鹼性可顯影黏合劑樹脂溶解於四氫呋喃中從而以具有THF中1.0(重量/重量)%的濃度(按固體含量計約0.5(重量/重量)%),使用孔徑為0.45微米的針筒過濾器過濾且接著以20微升的量注射至GPC中,且四氫呋喃(THF)用作GPC的行動相且流動速率為1.0毫升/分鐘。管柱經組態有串聯連接的一個安捷倫Plagal 5微米保護件(7.5×50毫米)及兩個安捷倫Plagal 5微米Mixed D(7.5×300毫米),且在40℃下藉由使用安捷倫1260無限II系統及RI偵測器執行量測。 Specific examples of measurement conditions are as follows. The alkaline developable binder resin was dissolved in tetrahydrofuran to have a concentration of 1.0 (w/w) % in THF (approximately 0.5 (w/w) % by solids), filtered using a 0.45 micron pore size syringe was filtered and then injected into GPC in an amount of 20 microliters, and tetrahydrofuran (THF) was used as the mobile phase of the GPC and the flow rate was 1.0 ml/min. The column was configured with one Agilent Plagal 5 micron guard (7.5 x 50 mm) and two Agilent Plagal 5 micron Mixed D (7.5 x 300 mm) connected in series, and was heated at 40°C by using an Agilent 1260 Infinity II The system and the RI detector perform the measurements.
經由孔徑為0.45微米的針筒過濾器過濾其中將具有各種分子量的聚苯乙烯溶解於濃度為0.1(重量/重量)%的四氫呋喃中的聚苯乙烯標準樣本(STD A、STD B、STD C、STD D)且接著注射至GPC中,且使用校準曲線測定鹼性可顯影黏合劑樹脂的重均分子量(Mw)的值。 Polystyrene standard samples (STD A, STD B, STD C, STD D) and then injected into GPC, and the value of the weight average molecular weight (Mw) of the alkaline developable binder resin was determined using a calibration curve.
STD A(Mp):791,000/27,810/945 STD A(Mp): 791,000/27,810/945
STD B(Mp):282,000/10,700/580 STD B(Mp): 282,000/10,700/580
STD C(Mp):126,000/4430/370 STD C(Mp): 126,000/4430/370
STD D(Mp):51,200/1920/162 STD D(Mp): 51,200/1920/162
藉由差示掃描量熱計(DSC)(珀金埃爾默公司,DSC-7)比較參考物與黏合劑聚合物的玻璃轉移溫度。可藉由將溫度維持在20℃下15分鐘且接著以1℃/分鐘的速率將溫度升高至200℃來 執行量測。 The glass transition temperatures of the reference and binder polymers were compared by differential scanning calorimeter (DSC) (Perkin Elmer, DSC-7). can be achieved by maintaining the temperature at 20°C for 15 minutes and then increasing the temperature to 200°C at a rate of 1°C/minute Perform measurements.
藉由以下製程量測鹼性可顯影黏合劑樹脂的酸值:取樣約1公克鹼性可顯影黏合劑樹脂,溶解於50毫升混合溶劑(MeOH 20%、丙酮80%)中,向其中添加兩滴1%酚酞指示劑,且接著用0.1N-KOH滴定來量測酸值。 The acid value of the alkali-developable adhesive resin was measured by the following process: sample about 1 gram of the alkali-developable adhesive resin, dissolve it in 50 ml of mixed solvent (MeOH 20%, acetone 80%), add two 1% phenolphthalein indicator was dropped, and then the acid value was measured by titration with 0.1N-KOH.
第一鹼性可顯影黏合劑樹脂可具有140毫克氫氧化鉀/公克或大於140毫克氫氧化鉀/公克且160毫克氫氧化鉀/公克或小於160毫克氫氧化鉀/公克的酸值。此外,第二鹼性可顯影黏合劑樹脂可具有160毫克氫氧化鉀/公克或大於160毫克氫氧化鉀/公克且200毫克氫氧化鉀/公克或小於200毫克氫氧化鉀/公克的酸值。 The first alkaline developable binder resin may have an acid value of 140 mg potassium hydroxide/gram or greater and 160 mg potassium hydroxide/gram or less. Additionally, the second alkaline developable binder resin may have an acid value of 160 mg potassium hydroxide/gram or greater and 200 mg potassium hydroxide/gram or less.
具體言之,第一鹼性可顯影黏合劑樹脂與第二鹼性可顯影黏合劑樹脂的玻璃轉移溫度的比率可為1:1.5或大於1:1.5且1:5或小於1:5、1:1.5或大於1:1.5且1:3或小於1:3、1:1.5或大於1:1.5且1:2或小於1:2、1:1.5或大於1:1.5且1:1.8或小於1:1.8、1:1.5或大於1:1.5且1:1.75或小於1:1.75或1:1.5或大於1:1.5且1:1.6或小於1:1.6。 Specifically, the ratio of the glass transition temperature of the first alkaline developable binder resin to the second alkaline developable binder resin may be 1:1.5 or more and 1:5 or less than 1:5, 1 : 1.5 or more than 1: 1.5 and 1: 3 or less than 1: 3, 1: 1.5 or more than 1: 1.5 and 1: 2 or less than 1: 2, 1: 1.5 or more than 1: 1.5 and 1: 1.8 or less than 1 : 1.8, 1:1.5 or greater than 1:1.5 and 1:1.75 or less than 1:1.75 or 1:1.5 or greater than 1:1.5 and 1:1.6 or less than 1:1.6.
此外,第一鹼性可顯影黏合劑樹脂與第二鹼性可顯影黏合劑樹脂的酸值比可為1:1.01或大於1:1.01且1:1.5或小於1:1.5、1:1.01或大於1:1.01且1:1.25或小於1:1.25、1:1.01或大於1:1.01且1:1.2或小於1:1.2或1:1.01或大於1:1.01且1:1.1或小於1:1.1。 In addition, the acid value ratio of the first alkali-developable binder resin to the second alkali-developable binder resin may be 1:1.01 or more and 1:1.5 or less, 1:1.01 or more 1:1.01 and 1:1.25 or less than 1:1.25, 1:1.01 or more than 1:1.01 and 1:1.2 or less than 1:1.2 or 1:1.01 or more than 1:1.01 and 1:1.1 or less than 1:1.1.
同時,一個實施例的光敏樹脂組成物中所含有的第一鹼性可顯影黏合劑樹脂可包含相對於1莫耳由式3表示的重複單元的1.2莫耳或大於1.2且3莫耳或小於3莫耳、1.2莫耳或大於1.2莫耳且2莫耳或小於2莫耳、1.5莫耳或大於1.5莫耳且2莫耳或
小於2莫耳或1.5莫耳或大於1.5莫耳且1.6莫耳或小於1.6莫耳的由化學式4表示的重複單元。
Meanwhile, the first alkali-developable binder resin contained in the photosensitive resin composition of one embodiment may contain 1.2 mol or more and 3 mol or less of the repeating unit represented by
此外,一個實施例的光敏樹脂組成物中所含有的第一鹼性可顯影黏合劑樹脂可以相對於1莫耳由化學式17表示的重複單元的2莫耳或大於2莫耳且10莫耳或小於10莫耳、3莫耳或大於3莫耳且10莫耳或小於10莫耳、3莫耳或大於3莫耳且5莫耳或小於5莫耳或4莫耳或大於4莫耳且5莫耳或小於5莫耳的量包含由化學式15表示的重複單元。 In addition, the first alkali-developable binder resin contained in the photosensitive resin composition of one embodiment may be 2 mol or more and 10 mol or more of the repeating unit represented by Chemical Formula 17 with respect to 1 mol. less than 10 moles, 3 moles or greater than 3 moles and 10 moles or less than 10 moles, 3 moles or greater than 3 moles and 5 moles or less than 5 moles or 4 moles or greater than 4 moles and The amount of 5 mol or less includes the repeating unit represented by Chemical Formula 15.
同時,第二鹼性可顯影黏合劑樹脂可包含由以下化學式14表示的重複單元、由以下化學式15表示的重複單元以及由以下化學式16表示的重複單元的無規共聚物。 Meanwhile, the second alkaline developable binder resin may include a random copolymer of a repeating unit represented by the following Chemical Formula 14, a repeating unit represented by the following Chemical Formula 15, and a repeating unit represented by the following Chemical Formula 16.
在化學式14中,R3'為具有1個至10個碳原子的烷基。 In Chemical Formula 14, R 3 ′ is an alkyl group having 1 to 10 carbon atoms.
在化學式15中,R4"為具有1個至10個碳原子的烷基,且R5"為具有1個至10個碳原子的烷基。 In Chemical Formula 15, R 4 " is an alkyl group having 1 to 10 carbon atoms, and R 5 " is an alkyl group having 1 to 10 carbon atoms.
在化學式16中,Ar為具有6個至20個碳原子的芳基。 In Chemical Formula 16, Ar is an aryl group having 6 to 20 carbon atoms.
由化學式14表示的重複單元可為衍生自由以下化學式14-1表示的單體的重複單元。 The repeating unit represented by Chemical Formula 14 may be a repeating unit derived from a monomer represented by the following Chemical Formula 14-1.
在化學式14-1中,R3"為具有1個至10個碳原子的烷基。在化學式14-1中,R3"的定義與針對化學式14所描述的相同。由化學式14-1表示的單體的特定實例可包含甲基丙烯酸(MAA)。 In Chemical Formula 14-1, R 3 " is an alkyl group having 1 to 10 carbon atoms. In Chemical Formula 14-1, the definition of R 3 " is the same as that described for Chemical Formula 14. Specific examples of the monomer represented by Chemical Formula 14-1 may include methacrylic acid (MAA).
由化學式15表示的重複單元可為衍生自由以下化學式15-1表示的單體的重複單元。 The repeating unit represented by Chemical Formula 15 may be a repeating unit derived from a monomer represented by the following Chemical Formula 15-1.
在化學式15-1中,R4"為具有1個至10個碳原子的烷基,且R5"為具有1個至10個碳原子的烷基。在化學式15-1中,R4" 及R5"的定義與針對化學式15所描述的相同。由化學式15-1表示的單體的特定實例可包含甲基丙烯酸甲酯(MMA)。 In Chemical Formula 15-1, R 4 " is an alkyl group having 1 to 10 carbon atoms, and R 5 " is an alkyl group having 1 to 10 carbon atoms. In Chemical Formula 15-1, the definitions of R 4 " and R 5 " are the same as those described for Chemical Formula 15. Specific examples of the monomer represented by Chemical Formula 15-1 may include methyl methacrylate (MMA).
由化學式16表示的重複單元可為衍生自由以下化學式16-1表示的單體的重複單元。 The repeating unit represented by Chemical Formula 16 may be a repeating unit derived from a monomer represented by the following Chemical Formula 16-1.
在化學式16-1中,Ar為具有6個至20個碳原子的芳基。在化學式16-1中,Ar的定義與針對化學式16所描述的相同。由化學式16-1表示的單體的特定實例可包含苯乙烯(SM)。 In Chemical Formula 16-1, Ar is an aryl group having 6 to 20 carbon atoms. In Chemical Formula 16-1, the definition of Ar is the same as that described for Chemical Formula 16. Specific examples of the monomer represented by Chemical Formula 16-1 may include styrene (SM).
具體言之,第一鹼性可顯影黏合劑樹脂可以1:(2或大於2且5或小於5):(0.2或大於0.2且0.9或小於0.9)、1:(2或大於2且3或小於3):(0.5或大於0.5且0.9或小於0.9)、1:(2.5或大於2.5且3或小於3):(0.6或大於0.6且0.9或小於0.9)或1:(2.75或大於2.75且3或小於3):(0.6或大於0.6且0.75或小於0.75)的比率包含由化學式14表示的重複單元:由化學式15表示的重複單元:由化學式16表示的重複單元。 Specifically, the first alkali developable binder resin may be 1:(2 or more and 5 or less than 5):(0.2 or more and 0.9 or less than 0.9), 1:(2 or more and 3 or Less than 3): (0.5 or greater than 0.5 and 0.9 or less than 0.9), 1: (2.5 or greater than 2.5 and 3 or less than 3): (0.6 or greater than 0.6 and 0.9 or less than 0.9) or 1: (2.75 or greater than 2.75 and 3 or less than 3): The ratio of (0.6 or more and 0.75 or less than 0.75) includes the repeating unit represented by Chemical Formula 14: the repeating unit represented by Chemical Formula 15: the repeating unit represented by Chemical Formula 16.
此外,第二鹼性可顯影黏合劑樹脂可以1:(1.1或大於1.1且2或小於2):(0.2或大於0.2且0.99或小於0.99)、1:(1.5或大於1.5且2或小於2):(0.5或大於0.5且0.99或小於0.99)或1:(1.5或大於1.5且1.75或小於1.75):(0.75或大於0.75且0.99或小於0.99)的比率包含由化學式14表示的重複單元:由化學式15表示的重複單元:由化學式16表示的重複單元。 In addition, the second alkali developable binder resin may be 1:(1.1 or more and 2 or less than 2):(0.2 or more and 0.99 or less than 0.99), 1:(1.5 or more and 2 or less than 2 ): (0.5 or more and 0.99 or less than 0.99) or 1: (1.5 or more and 1.75 or less than 1.75): (0.75 or more and 0.99 or less than 0.99) at a ratio including the repeating unit represented by Chemical Formula 14: Repeating unit represented by Chemical Formula 15: Repeating unit represented by Chemical Formula 16.
同時,按100重量份的第一鹼性可顯影黏合劑樹脂計, 本揭露內容的一個實施例的光敏樹脂組成物可包含500重量份或大於500重量份且1000重量份或小於1000重量份、600重量份或大於600重量份且800重量份或小於800重量份、700重量份或大於700重量份且800重量份或小於800重量份的第二鹼性可顯影黏合劑樹脂。 Meanwhile, based on 100 parts by weight of the first alkali developable binder resin, The photosensitive resin composition of one embodiment of the present disclosure may include 500 parts by weight or more and 1000 parts by weight or less than 1000 parts by weight, 600 parts by weight or more and 800 parts by weight or less, 700 parts by weight or more and 800 parts by weight or less of the second alkali developable binder resin.
如上文所描述,由於以按100重量份的第一鹼性可顯影黏合劑樹脂計的500重量份或大於500重量份的過度量添加第二鹼性可顯影黏合劑樹脂,因此有可能實現賦予光敏樹脂疏水性功能,增大對顯影劑溶液的抗性以及改良電路特性的技術效果。 As described above, since the second alkaline developable binder resin is added in an excessive amount of 500 parts by weight or more based on 100 parts by weight of the first alkaline developable binder resin, it is possible to achieve imparting The hydrophobic function of the photosensitive resin increases the resistance to the developer solution and the technical effect of improving the circuit characteristics.
(2)光聚合起始劑 (2) Photopolymerization initiator
根據本揭露內容的光敏樹脂組成物中含有的光聚合起始劑為藉由UV及其他輻射引發光可聚合單體的鏈反應的材料且在固化乾膜式光阻中發揮重要作用。 The photopolymerization initiator contained in the photosensitive resin composition according to the present disclosure is a material that initiates chain reaction of photopolymerizable monomers by UV and other radiation and plays an important role in curing dry film photoresist.
可用作光聚合起始劑的化合物可包含蒽醌衍生物,諸如2-甲基蒽醌及2-乙基蒽醌;及安息香衍生物,諸如安息香甲基醚、二苯甲酮、菲醌以及4,4'-雙(二甲胺基)二苯甲酮。 Compounds that can be used as photopolymerization initiators can include anthraquinone derivatives such as 2-methylanthraquinone and 2-ethylanthraquinone; and benzoin derivatives such as benzoin methyl ether, benzophenone, phenanthraquinone and 4,4'-bis(dimethylamino)benzophenone.
另外,由2,2'-雙(2-氯苯基)-4,4'-5,5'-四苯基雙咪唑、1-羥基環己基苯基酮、2,2-二甲氧基-1,2-二苯基乙-1-酮、2-甲基-1-[4-(甲硫基)苯基]-2-N-嗎啉基丙-1-酮、2-苯甲基-2-二甲胺基-1-[4-N-嗎啉基苯基]丁-1-酮、2-羥基-2-甲基-1-苯基丙-1-酮、2,4,6-三甲基苯甲醯基二苯基氧化膦、1-[4-(2-羥基甲氧基)苯基]-2-羥基-2-甲基丙-1-酮、2,4-二乙基噻噸酮、2-氯噻噸酮、2,4-二甲基噻噸酮、3,3-二甲基-4-甲氧基二苯甲酮、二苯甲酮、1-氯-4-丙氧基噻噸酮、1-(4-異丙基苯基)-2-羥基-2-甲基丙-1-酮、1-(4-十二烷基苯基)-2-羥基 -2-甲基丙-1-酮、4-苯甲醯基-4'-甲基二甲基硫醚、4-二甲基胺基苯甲酸、4-二甲基胺基苯甲酸甲酯、4-二甲基胺基苯甲酸乙酯、4-二甲基胺基苯甲酸丁酯、4-二甲基胺基苯甲酸2-乙基己酯、4-二甲基胺基苯甲酸2-異戊酯、2,2-二乙氧基苯乙酮、苯甲基酮二甲基縮醛、苯甲基酮β-甲氧基二乙縮醛、1-苯基-1,2-丙基二肟-o,o'-(2-羰基)乙氧基醚、鄰苯甲醯基苯甲酸甲酯、雙[4-二甲胺基苯基)酮、4,4'-雙(二乙胺基)二苯甲酮、4,4'-二氯二苯甲酮、苯甲基、安息香、甲氧基安息香、乙氧基安息香、異丙氧基安息香、正丁氧基安息香、異丁氧基安息香、三級丁氧基安息香、對二甲胺基苯乙酮、對三級丁基三氯苯乙酮、對三級丁基二氯苯乙酮、噻噸酮、2-甲基噻噸酮、2-異丙基噻噸酮、二苯并環庚酮、α,α-二氯-4-苯氧基苯乙酮以及4-二甲基胺基苯甲酸戊酯中選出的化合物可用作光聚合起始劑,但不限於此。 In addition, from 2,2'-bis(2-chlorophenyl)-4,4'-5,5'-tetraphenylbisimidazole, 1-hydroxycyclohexyl phenyl ketone, 2,2-dimethoxy -1,2-Diphenylethan-1-one, 2-methyl-1-[4-(methylthio)phenyl]-2-N-morpholinopropan-1-one, 2-benzyl yl-2-dimethylamino-1-[4-N-morpholinophenyl]butan-1-one, 2-hydroxy-2-methyl-1-phenylpropan-1-one, 2,4 ,6-Trimethylbenzyldiphenylphosphine oxide, 1-[4-(2-hydroxymethoxy)phenyl]-2-hydroxy-2-methylpropan-1-one, 2,4 -Diethylthioxanthone, 2-chlorothioxanthone, 2,4-dimethylthioxanthone, 3,3-dimethyl-4-methoxybenzophenone, benzophenone, 1 -Chloro-4-propoxythioxanthone, 1-(4-isopropylphenyl)-2-hydroxy-2-methylpropan-1-one, 1-(4-dodecylphenyl) -2-Hydroxy -2-Methylpropan-1-one, 4-benzyl-4'-methyldimethyl sulfide, 4-dimethylaminobenzoic acid, methyl 4-dimethylaminobenzoate , 4-dimethylaminobenzoic acid ethyl ester, 4-dimethylaminobenzoic acid butyl ester, 4-dimethylaminobenzoic acid 2-ethylhexyl ester, 4-dimethylaminobenzoic acid 2-Isoamyl ester, 2,2-diethoxyacetophenone, benzyl ketone dimethyl acetal, benzyl ketone β-methoxydiethyl acetal, 1-phenyl-1,2 -Propyldioxime-o,o'-(2-carbonyl)ethoxy ether, methyl o-benzylbenzoate, bis[4-dimethylaminophenyl)ketone, 4,4'-bis (Diethylamino)benzophenone, 4,4'-dichlorobenzophenone, benzyl, benzoin, methoxybenzoin, ethoxybenzoin, isopropoxybenzoin, n-butoxybenzoin , isobutoxybenzoin, tertiary butoxybenzoin, p-dimethylaminoacetophenone, p-tertiary butyl trichloroacetophenone, p-tertiary butyl dichloroacetophenone, thioxanthone, 2 - Methyl thioxanthone, 2-isopropyl thioxanthone, dibenzocycloheptanone, α,α-dichloro-4-phenoxyacetophenone, and amyl 4-dimethylaminobenzoate Compounds selected from these can be used as photopolymerization initiators, but are not limited thereto.
按固體含量計,所含有的光聚合起始劑的量為相對於光敏樹脂組成物的總重量的1重量%或大於1重量%且10重量%或小於10重量%。當光聚合起始劑的含量在上述範圍內時,可獲得足夠的靈敏度。按重量計的固體含量意謂自光敏樹脂組成物排除溶劑的剩餘組分。 The photopolymerization initiator is contained in an amount of 1 wt % or more and 10 wt % or less with respect to the total weight of the photosensitive resin composition in terms of solid content. When the content of the photopolymerization initiator is within the above range, sufficient sensitivity can be obtained. The solid content by weight means the remaining components excluding the solvent from the photosensitive resin composition.
當光聚合起始劑的含量小於1重量%時,光效率低且必須施加大量曝光,且因此存在生產效率極端降低的缺點。當光聚合起始劑的含量超出10重量%時,存在膜為脆性的且顯影劑溶液的污染增加,導致短路或類似者的缺陷的問題。 When the content of the photopolymerization initiator is less than 1% by weight, light efficiency is low and a large amount of exposure must be applied, and thus there is a disadvantage that production efficiency is extremely lowered. When the content of the photopolymerization initiator exceeds 10% by weight, there is a problem that the film is brittle and the contamination of the developer solution increases, causing short-circuit or the like defects.
(3)光可聚合化合物 (3) Photopolymerizable compounds
本揭露內容的光可聚合化合物具有在UV曝光之後對顯 影劑溶液的抗性且實現圖案形成。 The photopolymerizable compounds of the present disclosure have a Resistant to developer solutions and enables patterning.
光可聚合化合物可包含雙官能(甲基)丙烯酸酯化合物。雙官能(甲基)丙烯酸酯化合物可包含伸烷基二醇類二(甲基)丙烯酸酯或雙酚類二(甲基)丙烯酸酯。 The photopolymerizable compound may include a bifunctional (meth)acrylate compound. The bifunctional (meth)acrylate compound may contain an alkylene glycol-based di(meth)acrylate or a bisphenol-based di(meth)acrylate.
作為伸烷基二醇類二(甲基)丙烯酸酯,可使用由以下化學式5表示的化合物。 As the alkylene glycol-based di(meth)acrylate, a compound represented by the following Chemical Formula 5 can be used.
在化學式5中,l+n為2或3的整數,且m為12至18的整數。 In Chemical Formula 5, l+n is an integer of 2 or 3, and m is an integer of 12 to 18.
由化學式5表示的化合物可提高光敏樹脂組成物的疏水性、顯著提高對顯影劑溶液及電鍍溶液的抗性以及縮短固化膜的剝離時間。 The compound represented by Chemical Formula 5 can improve the hydrophobicity of the photosensitive resin composition, significantly improve the resistance to developer solutions and plating solutions, and shorten the peeling time of the cured film.
在本揭露內容中,按光敏樹脂組成物的固體含量的總重量計,由化學式5表示的化合物可為10重量%或大於10重量%且60重量%或小於60重量%或20重量%或大於20重量%且40重量%或小於40重量%。 In the present disclosure, the compound represented by Chemical Formula 5 may be 10 wt % or more and 60 wt % or less than 60 wt % or 20 wt % or more based on the total weight of the solid content of the photosensitive resin composition 20% by weight and 40% by weight or less.
若按光敏樹脂組成物的固體含量的總重量計,由化學式5表示的化合物的含量小於10重量%,則由於添加由化學式5表示的化合物而導致的效果不充足,且若含量超出60重量%,則可能存在疏水性增加且曝光之後顯影製程的顯影時間快速增加的問題。 If the content of the compound represented by Chemical Formula 5 is less than 10% by weight based on the total weight of the solid content of the photosensitive resin composition, the effect due to the addition of the compound represented by Chemical Formula 5 is insufficient, and if the content exceeds 60% by weight , there may be problems that the hydrophobicity increases and the development time of the development process increases rapidly after exposure.
作為雙酚類二(甲基)丙烯酸酯,可使用含有環氧乙烷的雙酚類二(甲基)丙烯酸酯。含有環氧乙烷的雙酚類二(甲基)丙烯酸酯可包含兩種類型的每分子含有8莫耳或小於8莫耳的環氧乙烷的雙酚類二(甲基)丙烯酸酯及每分子含有大於8莫耳且16莫耳或小於16莫耳的環氧乙烷的雙酚類二(甲基)丙烯酸酯。 As the bisphenol-based di(meth)acrylate, ethylene oxide-containing bisphenol-based di(meth)acrylate can be used. The bisphenol-based di(meth)acrylates containing ethylene oxide may comprise two types of bisphenol-based di(meth)acrylates containing 8 moles or less of ethylene oxide per molecule and Bisphenolic di(meth)acrylates containing more than 8 moles and 16 moles or less of ethylene oxide per molecule.
含有8莫耳或小於8莫耳的環氧乙烷的雙酚類二(甲基)丙烯酸酯的實例可包含由美源特種化學品公司(Miwon Specialty Chemical Co.,Ltd)製造的Miramer M244(BPA(EO)3DA,雙酚AA(EO)3二丙烯酸酯)、Miramer M240(BPA(EO)4DA,雙酚A(EO)4二丙烯酸酯)以及Miramer M241(雙酚A(EO)4二甲基丙烯酸酯)。 Examples of the bisphenol-based di(meth)acrylate containing 8 mol or less of ethylene oxide may include Miramer M244 (BPA) manufactured by Miwon Specialty Chemical Co., Ltd. (EO) 3 DA, Bisphenol AA(EO) 3 Diacrylate), Miramer M240 (BPA(EO) 4 DA, Bisphenol A(EO) 4 Diacrylate) and Miramer M241 (Bisphenol A(EO) 4 dimethacrylate).
含有大於8莫耳且16莫耳或小於16莫耳的環氧乙烷的雙酚類二(甲基)丙烯酸酯的實例可包含由美源特種化學品公司製造的Miramer M2100(BPA(EO)10DA,雙酚A(EO)10二丙烯酸酯)、Miramer M2200(BPA(EO)20DA,雙酚A(EO)20二丙烯酸酯)以及Miramer M2101(雙酚A(EO)10二甲基丙烯酸酯)。 Examples of bisphenolic di(meth)acrylates containing greater than 8 moles and 16 moles or less of ethylene oxide may include Miramer M2100 (BPA(EO) 10 manufactured by American Source Specialty Chemicals, Inc. DA, Bisphenol A(EO) 10 Diacrylate), Miramer M2200 (BPA(EO) 20 DA, Bisphenol A(EO) 20 Diacrylate) and Miramer M2101 (Bisphenol A(EO) 10 Dimethacrylate) ester).
更具體言之,按100重量份的每分子含有大於8莫耳且16莫耳或小於16莫耳的環氧乙烷的雙酚類二(甲基)丙烯酸酯計,可以100重量份或小於100重量份、50重量份或小於50重量份、1重量份或大於1重量份以及100重量份或小於100重量份、或1重量份或大於1重量份且50重量份或小於50重量份的量含有每分子含有8莫耳或小於8莫耳的環氧乙烷的雙酚類二(甲基)丙烯酸酯。 More specifically, based on 100 parts by weight of bisphenol-based di(meth)acrylates containing more than 8 moles and 16 moles or less of ethylene oxide per molecule, 100 parts by weight or less may be 100 parts by weight, 50 parts by weight or less, 1 part by weight or more, and 100 parts by weight or less than 100 parts by weight, or 1 part by weight or more and 50 parts by weight or less The amount contains bisphenol-based di(meth)acrylates containing 8 moles or less of ethylene oxide per molecule.
同時,光可聚合化合物可包含三官能或更高多官能(甲基)丙烯酸酯化合物。 Meanwhile, the photopolymerizable compound may contain a trifunctional or higher polyfunctional (meth)acrylate compound.
三官能或更高多官能(甲基)丙烯酸酯化合物可具有其中三個或大於三個具有1個至10個碳原子的環氧烷基團及三個或大於三個(甲基)丙烯酸酯官能基結合至具有1個至20個碳原子的中心基團的結構。 The trifunctional or higher polyfunctional (meth)acrylate compound may have three or more alkylene oxide groups having 1 to 10 carbon atoms therein and three or more (meth)acrylates The functional group is bonded to a structure having a central group of 1 to 20 carbon atoms.
三官能或更高多官能(甲基)丙烯酸酯化合物可包含由以下化學式12表示的化合物。 The trifunctional or higher polyfunctional (meth)acrylate compound may include a compound represented by the following Chemical Formula 12.
在化學式12中,R14為氫或具有1個至10個碳原子的烷基,R15為具有1個至10個碳原子的伸烷基,R16為含有具有1個至20個碳原子的中心基團的p價官能基,n12為1至20的整數以及p為取代R16的官能基的數目且為3至10的整數。 In Chemical Formula 12, R 14 is hydrogen or an alkyl group having 1 to 10 carbon atoms, R 15 is an alkylene group having 1 to 10 carbon atoms, and R 16 is an alkylene group having 1 to 20 carbon atoms The p-valent functional group of the central group, n12 is an integer of 1 to 20 and p is the number of functional groups substituted for R16 and is an integer of 3 to 10.
光可聚合化合物可更包含單官能(甲基)丙烯酸酯化合物。亦即,根據本揭露內容的一個實施例的光敏樹脂組成物可包含單官能(甲基)丙烯酸酯化合物及三官能或更高多官能(甲基)丙烯酸酯化合物的混合物。 The photopolymerizable compound may further contain a monofunctional (meth)acrylate compound. That is, the photosensitive resin composition according to one embodiment of the present disclosure may include a mixture of a monofunctional (meth)acrylate compound and a trifunctional or higher polyfunctional (meth)acrylate compound.
單官能(甲基)丙烯酸酯化合物可包含(甲基)丙烯酸酯,所述(甲基)丙烯酸酯包含具有1個至10個碳原子的環氧烷基團。 The monofunctional (meth)acrylate compound may contain a (meth)acrylate containing an alkylene oxide group having 1 to 10 carbon atoms.
更具體言之,單官能(甲基)丙烯酸酯化合物可包含由以下化學式11表示的化合物。 More specifically, the monofunctional (meth)acrylate compound may include a compound represented by the following Chemical Formula 11.
[化學式11]
在化學式11中,R11為氫或具有1個至10個碳原子的烷基,R12為具有1個至10個碳原子的伸烷基,R13為具有1個至10個碳原子的烷基以及n11為1至20的整數。 In Chemical Formula 11, R 11 is hydrogen or an alkyl group having 1 to 10 carbon atoms, R 12 is an alkylene group having 1 to 10 carbon atoms, and R 13 is an alkylene group having 1 to 10 carbon atoms The alkyl group and n11 are integers from 1 to 20.
藉由包含由化學式11表示的單官能(甲基)丙烯酸酯化合物及由化學式12表示的三官能或更高多官能(甲基)丙烯酸酯化合物,電路特性等效於現有產物的彼等特性,但光固化速度增大,使得對於加速所得膜的顯色時間且增加顏色變化量的技術原因而言,提高改變對比度所需的時間,由此確保優異的顯影特性。 By including the monofunctional (meth)acrylate compound represented by Chemical Formula 11 and the trifunctional or higher polyfunctional (meth)acrylate compound represented by Chemical Formula 12, the circuit characteristics are equivalent to those of the existing product, However, the photocuring speed is increased so that, for technical reasons of accelerating the color development time of the resulting film and increasing the amount of color change, the time required to change the contrast is increased, thereby ensuring excellent development characteristics.
具體言之,在化學式11中,n11可為1至20的整數、1至10的整數或5至10的整數。由化學式11表示的單官能(甲基)丙烯酸酯化合物的實例不受特別限制,但可為例如由以下化學式A表示的甲氧基丙二醇[400]丙烯酸酯(A040)。 Specifically, in Chemical Formula 11, n11 may be an integer of 1 to 20, an integer of 1 to 10, or an integer of 5 to 10. Examples of the monofunctional (meth)acrylate compound represented by Chemical Formula 11 are not particularly limited, but may be, for example, methoxypropanediol [400]acrylate (A040) represented by Chemical Formula A below.
由於一個實施例的光敏樹脂組成物包含由化學式11表示的單官能(甲基)丙烯酸酯化合物,因此由於增大光固化速度的技術原因,有可能實現在曝光部分中快速實施膜的顏色變化的效果。 Since the photosensitive resin composition of one embodiment contains the monofunctional (meth)acrylate compound represented by Chemical Formula 11, it is possible to realize a method of rapidly implementing the color change of the film in the exposed portion due to the technical reason of increasing the photocuring speed. Effect.
此外,在化學式12中,n12為1至20的整數、1至10的 整數或1至5的整數,且p意謂取代R16的官能基的數目且可為3至10的整數、3至5的整數或3至4的整數。 In addition, in Chemical Formula 12, n12 is an integer of 1 to 20, an integer of 1 to 10, or an integer of 1 to 5, and p means the number of functional groups substituted for R 16 and may be an integer of 3 to 10, an integer of 3 to 10 An integer of 5 or an integer of 3 to 4.
亦即,在化學式12中,由於意謂取代R16的官能基的數目的p為3至10的整數,因此其可為由化學式12表示的三官能或更高多官能(甲基)丙烯酸酯化合物。 That is, in Chemical Formula 12, since p meaning the number of functional groups substituted for R 16 is an integer of 3 to 10, it may be a trifunctional or higher polyfunctional (meth)acrylate represented by Chemical Formula 12 compound.
具體言之,三官能或更高多官能(甲基)丙烯酸酯化合物可由以下化學式12-1表示。 Specifically, the trifunctional or higher polyfunctional (meth)acrylate compound may be represented by the following Chemical Formula 12-1.
在化學式12-1中,R20為三價有機基團,R21至R23各自獨立地為具有1個至10個碳原子的伸烷基,R24至R26各自獨立地為氫或具有1個至10個碳原子的烷基,以及n至n5各自獨立地為1至20的整數。 In Chemical Formula 12-1, R 20 is a trivalent organic group, R 21 to R 23 are each independently an alkylene group having 1 to 10 carbon atoms, and R 24 to R 26 are each independently hydrogen or have The alkyl group of 1 to 10 carbon atoms, and n to n5 are each independently an integer of 1 to 20.
在化學式12-1中,n13至n15可為1至20的整數、1至10的整數或1至5的整數。 In Chemical Formula 12-1, n13 to n15 may be an integer of 1 to 20, an integer of 1 to 10, or an integer of 1 to 5.
由化學式12表示的三官能或更高多官能(甲基)丙烯酸酯化合物的實例不受限制,但可為例如由以下化學式B表示的T063(三羥甲基丙烷[EO]6三丙烯酸酯)。 Examples of the trifunctional or higher polyfunctional (meth)acrylate compound represented by Chemical Formula 12 are not limited, but may be, for example, T063 (trimethylolpropane [EO] 6 triacrylate) represented by the following Chemical Formula B .
[化學式B]
由於一個實施例的光敏樹脂組成物包含由化學式12表示的三官能或更高多官能(甲基)丙烯酸酯化合物,因此相較於單官能(甲基)丙烯酸酯化合物,由化學式12表示的三官能或更高多官能(甲基)丙烯酸酯化合物已在光固化期間增加交聯,且反應性基團防止因諸多技術原因所致的電路特性的降低且可實現增加顯色變化的量的效果。 Since the photosensitive resin composition of one embodiment includes the trifunctional or higher polyfunctional (meth)acrylate compound represented by Chemical Formula 12, the trifunctional or higher polyfunctional (meth)acrylate compound represented by Chemical Formula 12 has a Functional or higher polyfunctional (meth)acrylate compounds have increased crosslinking during photocuring, and reactive groups prevent degradation of circuit characteristics due to various technical reasons and can achieve the effect of increasing the amount of color development change .
同時,按100重量份的單官能(甲基)丙烯酸酯化合物計,一個實施例的光敏樹脂組成物可以110重量份或大於110重量份且500重量份或小於500重量份、110重量份或大於110重量份且300重量份或小於300重量份、110重量份或大於110重量份且200重量份或小於200重量份或150重量份或大於150重量份且200重量份或小於200重量份的量含有三官能或更高多官能(甲基)丙烯酸酯化合物。 Meanwhile, based on 100 parts by weight of the monofunctional (meth)acrylate compound, the photosensitive resin composition of one embodiment may be 110 parts by weight or more and 500 parts by weight or less, 110 parts by weight or more 110 parts by weight and 300 parts by weight or less, 110 parts by weight or more and 200 parts by weight or less or 150 parts by weight or more and 200 parts by weight or less Contains trifunctional or higher polyfunctional (meth)acrylate compounds.
由於一個實施例的光敏樹脂組成物含有相對於單官能(甲基)丙烯酸酯化合物的過量的三官能或更高多官能(甲基)丙烯酸酯化合物,因此可同時實現增大由化學式11表示的單官能(甲基)丙烯酸酯化合物的光固化速度且因此快速實施膜的顏色變化的效果及在由化學式12表示的三官能或更高多官能(甲基)丙烯酸酯化合物的光固化期間增加交聯且因此防止當僅添加單官能材料時出現的電路特性的降低以及藉由增加反應性基團的量而增加顯色變化 的量的效果。 Since the photosensitive resin composition of one embodiment contains the trifunctional or higher polyfunctional (meth)acrylate compound in excess relative to the monofunctional (meth)acrylate compound, it is possible to simultaneously achieve an increase in the amount represented by Chemical Formula 11. The photo-curing speed of the monofunctional (meth)acrylate compound and thus the effect of rapidly implementing the color change of the film and the increase in cross-linking during photocuring of the trifunctional or higher polyfunctional (meth)acrylate compound represented by Chemical Formula 12 and thus prevent the decrease in circuit characteristics that occurs when only monofunctional materials are added and the increase in color change by increasing the amount of reactive groups amount of effect.
當按100重量份的單官能(甲基)丙烯酸酯化合物計,一個實施例的光敏樹脂組成物含有小於100重量份的三官能或更高多官能(甲基)丙烯酸酯化合物時,可能存在電路特性劣化且顯色變化的量減少的技術問題。 When the photosensitive resin composition of one embodiment contains less than 100 parts by weight of a trifunctional or higher polyfunctional (meth)acrylate compound based on 100 parts by weight of the monofunctional (meth)acrylate compound, there may be a circuit The technical problem is that the characteristics are deteriorated and the amount of color development change is reduced.
此外,光可聚合化合物可包含雙官能(甲基)丙烯酸酯化合物、由化學式11表示的單官能(甲基)丙烯酸酯化合物以及由化學式12表示的三官能或更高多官能(甲基)丙烯酸酯化合物。 In addition, the photopolymerizable compound may include a bifunctional (meth)acrylate compound, a monofunctional (meth)acrylate compound represented by Chemical Formula 11, and a trifunctional or higher polyfunctional (meth)acrylic acid represented by Chemical Formula 12 ester compound.
亦即,一個實施例的光敏樹脂組成物包含光可聚合化合物,且光可聚合化合物可包含單官能(甲基)丙烯酸酯化合物、三官能或更高多官能(甲基)丙烯酸酯化合物以及雙官能(甲基)丙烯酸酯化合物。 That is, the photosensitive resin composition of one embodiment includes a photopolymerizable compound, and the photopolymerizable compound may include a monofunctional (meth)acrylate compound, a trifunctional or higher polyfunctional (meth)acrylate compound, and a difunctional (meth)acrylate compound. Functional (meth)acrylate compounds.
具體言之,按100重量份的單官能(甲基)丙烯酸酯化合物計,一個實施例的光敏樹脂組成物可以500重量份或大於500重量份且1500重量份或小於1500重量份、500重量份或大於500重量份且1000重量份或小於1000重量份、750重量份或大於750重量份且1000重量份或小於1000重量份或800重量份或大於800重量份且900重量份或小於900重量份的量含有雙官能(甲基)丙烯酸酯化合物。 Specifically, based on 100 parts by weight of the monofunctional (meth)acrylate compound, the photosensitive resin composition of one embodiment may be 500 parts by weight or more and 1500 parts by weight or less, 500 parts by weight or more than 500 parts by weight and 1000 parts by weight or less than 1000 parts by weight, 750 parts by weight or more than 750 parts by weight and 1000 parts by weight or less than 1000 parts by weight or 800 parts by weight or more than 800 parts by weight and 900 parts by weight or less than 900 parts by weight contains a difunctional (meth)acrylate compound.
亦即,按100重量份的單官能(甲基)丙烯酸酯化合物計,一個實施例的光敏樹脂組成物可含有110重量份或大於110重量份的三官能或更高多官能(甲基)丙烯酸酯化合物及500重量份或大於500重量份且1500重量份或小於1500重量份的雙官能(甲基)丙烯酸酯化合物。 That is, based on 100 parts by weight of the monofunctional (meth)acrylate compound, the photosensitive resin composition of one embodiment may contain 110 parts by weight or more of trifunctional or higher polyfunctional (meth)acrylic acid An ester compound and 500 parts by weight or more and 1500 parts by weight or less of a bifunctional (meth)acrylate compound.
此外,按100重量份的三官能或更高多官能(甲基)丙烯酸酯化合物計,一個實施例的光敏樹脂組成物可以500重量份或大於500重量份且1000重量份或小於1000重量份、500重量份或大於500重量份且800重量份或小於800重量份、500重量份或大於500重量份且750重量份或小於750重量份、500重量份或大於500重量份且700重量份或小於700重量份或500重量份或大於500重量份且600重量份或小於600重量份的量含有雙官能(甲基)丙烯酸酯化合物。 In addition, based on 100 parts by weight of the trifunctional or higher polyfunctional (meth)acrylate compound, the photosensitive resin composition of one embodiment may be 500 parts by weight or more and 1000 parts by weight or less, 500 parts by weight or more and 800 parts by weight or less, 500 parts by weight or more and 750 parts by weight or less, 500 parts by weight or more and 700 parts by weight or less The bifunctional (meth)acrylate compound is contained in an amount of 700 parts by weight or 500 parts by weight or more and 600 parts by weight or less.
如上文所描述,由於含有單官能(甲基)丙烯酸酯化合物、三官能或更高多官能(甲基)丙烯酸酯化合物以及雙官能(甲基)丙烯酸酯化合物且同時滿足上述重量範圍,因此一個實施例的光敏樹脂組成物可展現適當的電路特性,且當施加10毫焦/平方公分或大於10毫焦/平方公分的光強度時,可實現能夠快速顯色及曝光部分的顏色變化的技術效果。 As described above, since a monofunctional (meth)acrylate compound, a trifunctional or higher polyfunctional (meth)acrylate compound, and a bifunctional (meth)acrylate compound are contained while satisfying the above weight range, a The photosensitive resin composition of the embodiment can exhibit appropriate circuit characteristics, and when a light intensity of 10 mJ/cm 2 or more is applied, a technology capable of rapid color development and color change of an exposed portion can be realized Effect.
更具體言之,按100重量份的雙官能(甲基)丙烯酸酯化合物計,一個實施例的光敏樹脂組成物可以100重量份或小於100重量份、50重量份或小於50重量份、1重量份或大於1重量份且50重量份或小於50重量份或1重量份或大於1重量份且100重量份或小於100重量份的量含有由化學式11表示的單官能(甲基)丙烯酸酯化合物及由化學式12表示的三官能或更高多官能(甲基)丙烯酸酯化合物。 More specifically, based on 100 parts by weight of the bifunctional (meth)acrylate compound, the photosensitive resin composition of one embodiment may be 100 parts by weight or less, 50 parts by weight or less, 1 part by weight part by weight or more and 50 parts by weight or less or 1 part by weight or more and 100 parts by weight or less containing the monofunctional (meth)acrylate compound represented by Chemical Formula 11 and a trifunctional or higher polyfunctional (meth)acrylate compound represented by Chemical Formula 12.
按固體含量計,光可聚合化合物的含量可為相對於光敏樹脂組成物的總重量的10重量%或大於10重量%且70重量%或小於70重量%。當光可聚合化合物的含量在上述範圍內時,有可 能獲得增強光敏性、解析度、黏著性以及類似者的效果。按重量計的固體含量意謂自光敏樹脂組成物排除溶劑的剩餘組分。 The content of the photopolymerizable compound may be 10 wt % or more and 70 wt % or less with respect to the total weight of the photosensitive resin composition in terms of solid content. When the content of the photopolymerizable compound is within the above range, there may be The effect of enhancing photosensitivity, resolution, adhesion and the like can be obtained. The solid content by weight means the remaining components excluding the solvent from the photosensitive resin composition.
(4)光敏樹脂組成物 (4) Photosensitive resin composition
光敏樹脂組成物可滿足以下(a)或(b)中的任一者:(a)對於經由曝光及顯影含有光敏樹脂組成物的光敏樹脂層獲得的抗蝕劑圖案,在相互鄰接的光敏樹脂層線之間的空間中,殘留於底表面上的抗蝕劑殘餘物的最大足長度為1微米或小於1微米,或(b)對於其中將含有光敏樹脂組成物的光敏樹脂層層壓於基板上的膜樣本,當用含有鎳的水溶液進行鍍鎳20分鐘或大於20分鐘時,由以下等式1定義的黏著力為90%或大於90%。 The photosensitive resin composition may satisfy any one of the following (a) or (b): (a) For the resist pattern obtained by exposing and developing the photosensitive resin layer containing the photosensitive resin composition, in the photosensitive resin adjacent to each other; In the space between the layer lines, the maximum foot length of the resist residue remaining on the bottom surface is 1 micrometer or less, or (b) for the photosensitive resin layer in which the photosensitive resin composition is laminated on the The film sample on the substrate, when nickel-plated with an aqueous solution containing nickel for 20 minutes or more, had an adhesion of 90% or more as defined by Equation 1 below.
[等式1]黏著力(%)=(鍍鎳之後含有光敏樹脂組成物的光敏樹脂層與基板接觸的表面積/鍍鎳之前含有光敏樹脂組成物的光敏樹脂層與基板接觸的表面積)×100。 [Equation 1] Adhesion (%)=(surface area of the photosensitive resin layer containing the photosensitive resin composition after nickel plating in contact with the substrate/surface area of the photosensitive resin layer containing the photosensitive resin composition in contact with the substrate before nickel plating)×100 .
具體言之,對於經由曝光及顯影含有光敏樹脂組成物的光敏樹脂層獲得的抗蝕劑圖案,在相互鄰接的光敏樹脂層線之間的空間中,殘留於底表面上的抗蝕劑殘餘物的最大足長度可為1微米或小於1微米、0.7微米或小於0.7微米、0.1微米或大於0.1微米且1微米或小於1微米、0.1微米或大於0.1微米且0.7微米或小於0.7微米、0.4微米或大於0.4微米且0.7微米或小於0.7微米或0.5微米或大於0.5微米且0.6微米或小於0.6微米。 Specifically, for a resist pattern obtained by exposing and developing a photosensitive resin layer containing a photosensitive resin composition, the resist residue remaining on the bottom surface in the space between the lines of the photosensitive resin layer adjacent to each other The maximum foot length can be 1 micron or less, 0.7 microns or less than 0.7 microns, 0.1 microns or more than 0.1 microns and 1 microns or less, 0.1 microns or more than 0.1 microns and 0.7 microns or less than 0.7 microns, 0.4 microns or greater than 0.4 microns and 0.7 microns or less than 0.7 microns or 0.5 microns or greater than 0.5 microns and 0.6 microns or less than 0.6 microns.
經由選擇性曝光及顯影光敏樹脂組成物獲得抗蝕劑圖案,使得光敏樹脂組成物的一部分保留為光敏樹脂層以形成光敏 樹脂層線且可藉由顯影移除其一部分以在光敏樹脂層線之間形成空間。 A resist pattern is obtained by selectively exposing and developing the photosensitive resin composition, so that a part of the photosensitive resin composition remains as a photosensitive resin layer to form a photosensitive resin composition The resin layer lines and a portion thereof may be removed by development to form spaces between the photosensitive resin layer lines.
此時,未經由顯影移除而殘留的抗蝕劑殘餘物可存在於相互鄰接的光敏樹脂層線之間的空間中的底表面上,且當此抗蝕劑殘餘物的足長度過度升高至高於1微米時,圖案的底部部分處可過度出現基腳現象,使得難以實施具有高解析度的抗蝕劑圖案。 At this time, a resist residue remaining without being removed by development may exist on the bottom surface in the space between the photosensitive resin layer lines adjacent to each other, and when the foot length of this resist residue is excessively raised Above 1 micron, the footing phenomenon may occur excessively at the bottom portion of the pattern, making it difficult to implement a resist pattern with high resolution.
具體言之,抗蝕劑殘餘物的足長度可為以下點之間的最短直線距離:由光敏樹脂層線的一側與底表面及抗蝕劑殘餘物接觸所形成的邊界線上的一個點,與抗蝕劑殘餘物在由自一個點開始的光敏樹脂層線的一側的垂直線及自一個點開始的底表面的垂直線形成的平面的橫截面與由底表面及抗蝕劑殘餘物形成的分界線交叉的交叉點。 Specifically, the full length of the resist residue may be the shortest straight-line distance between the following points: a point on the boundary line formed by the contact of one side of the photosensitive resin layer line with the bottom surface and the resist residue, The cross-section of the plane formed by the vertical line on one side of the photosensitive resin layer line from one point and the vertical line on the bottom surface from one point with the resist residue and the bottom surface and the resist residue The intersection formed where the dividing line crosses.
抗蝕劑殘餘物的足長度將參考下圖2中的抗蝕劑圖案的示意性橫截面圖來描述。由光敏樹脂層線的一側與底表面及抗蝕劑殘餘物接觸所形成的邊界線上的一個點對應於由d1指示的點,且抗蝕劑殘餘物在由自一個點開始的光敏樹脂層線的一側的垂直線及自一個點開始的底表面的垂直線形成的平面的橫截面與由底表面及抗蝕劑殘餘物形成的分界線交叉的交叉點對應於由d2指示的點。d1與d2之間的最短直線距離對應於抗蝕劑殘餘物的足長度。 The full length of the resist residue will be described with reference to the schematic cross-sectional view of the resist pattern in FIG. 2 below. One point on the boundary line formed by the contact of one side of the photosensitive resin layer line with the bottom surface and the resist residue corresponds to the point indicated by d1, and the resist residue is on the photosensitive resin layer starting from one point. The cross-section of the plane formed by the vertical line on one side of the line and the vertical line of the bottom surface from one point intersects the dividing line formed by the bottom surface and the resist residue. The intersection corresponds to the point indicated by d2. The shortest straight-line distance between d1 and d2 corresponds to the full length of the resist residue.
抗蝕劑殘餘物的足長度可經由光學顯微鏡(蔡司AXIOPHOT顯微鏡(ZEISS AXIOPHOT Microscope))如圖1中所示來量測。 The full length of the resist residue can be measured via an optical microscope (ZEISS AXIOPHOT Microscope) as shown in FIG. 1 .
更具體言之,在用於量測抗蝕劑殘餘物的足長度的抗蝕 劑圖案中,光敏樹脂層線的上端的線寬與相互鄰接的光敏樹脂層線的上端部分之間的間隔之間的比率可為1:0.5至1:2或1:0.9至1:1.1具體言之,光敏樹脂層線的上端的線寬對應於下圖2中的L,且相互鄰接的光敏樹脂層線的上端部分之間的間隔對應於下圖2中的S。 More specifically, in a resist used to measure the full length of the resist residue In the agent pattern, the ratio between the line width of the upper end of the photosensitive resin layer line and the interval between the upper end portions of the photosensitive resin layer line adjacent to each other may be 1:0.5 to 1:2 or 1:0.9 to 1:1.1. In other words, the line width of the upper end of the photosensitive resin layer line corresponds to L in Fig. 2 below, and the interval between the upper end portions of the photosensitive resin layer lines adjacent to each other corresponds to S in Fig. 2 below.
此外,用於量測抗蝕劑殘餘物的足長度的光敏樹脂層線的上端的線寬可為5微米或大於5微米且15微米或小於15微米或9微米或大於9微米且11微米或小於11微米。光敏樹脂層線的上端的線寬可經由光學顯微鏡量測。 In addition, the line width of the upper end of the photosensitive resin layer line for measuring the full length of the resist residue may be 5 micrometers or more and 15 micrometers or less than 15 micrometers or 9 micrometers or more than 9 micrometers and 11 micrometers or less than 11 microns. The line width of the upper end of the photosensitive resin layer line can be measured through an optical microscope.
用於量測抗蝕劑殘餘物的足長度的光敏樹脂層的厚度可為20微米或大於20微米且30微米或小於30微米或24微米或大於24微米且26微米或小於26微米。光敏樹脂層的厚度對應於下圖2中的T。光敏樹脂層的厚度可經由光學顯微鏡量測。 The thickness of the photosensitive resin layer for measuring the full length of the resist residue may be 20 microns or more and 30 microns or less or 24 microns or more and 26 microns or less. The thickness of the photosensitive resin layer corresponds to T in Fig. 2 below. The thickness of the photosensitive resin layer can be measured through an optical microscope.
量測抗蝕劑殘餘物的足長度時的曝光條件是可使用曝光機器以35毫焦/平方公分或大於35毫焦/平方公分且45毫焦/平方公分或小於45毫焦/平方公分或39毫焦/平方公分或大於39毫焦/平方公分且41毫焦/平方公分或小於41毫焦/平方公分的曝光劑量來照射紫外線。曝光時間可為1分鐘或大於1分鐘且10分鐘或小於10分鐘。 The exposure conditions for measuring the full length of the resist residue are 35 mJ/cm 2 or more and 45 mJ/cm 2 or less than 45 mJ/cm 2 or The exposure dose of 39 mJ/cm 2 or more and 41 mJ/cm 2 or less is used to irradiate ultraviolet rays. The exposure time can be 1 minute or more and 10 minutes or less.
量測抗蝕劑殘餘物的足長度時的顯影條件是可使用濃度為0.5重量%或大於0.5重量%且1.5重量%或小於1.5重量%或0.9重量%或大於0.9重量%且1.1重量%或小於1.1重量%的鹼性水溶液。鹼性水溶液的pH可在9或大於9且11或小於11的範圍內,且溫度可根據光敏樹脂層的顯影特性來調節。鹼性水溶液的特定 實例可包含碳酸鈉水溶液、碳酸鉀水溶液以及氫氧化鈉水溶液。 The development conditions when measuring the full length of the resist residue are that a concentration of 0.5 wt % or more and 1.5 wt % or less than 1.5 wt % or 0.9 wt % or more and 1.1 wt % or more can be used. Less than 1.1 wt% alkaline aqueous solution. The pH of the alkaline aqueous solution may be in the range of 9 or more and 11 or less, and the temperature may be adjusted according to the developing characteristics of the photosensitive resin layer. Specificity of alkaline aqueous solution Examples may include aqueous sodium carbonate, aqueous potassium carbonate, and aqueous sodium hydroxide.
顯影可使用使鹼性水溶液與光敏樹脂層接觸的方法來執行,且作為特定接觸方法的實例,可使用噴塗或浸沒法。顯影時間可為1分鐘或大於1分鐘且10分鐘或小於10分鐘。 The development may be performed using a method of contacting an alkaline aqueous solution with the photosensitive resin layer, and as an example of a specific contact method, spraying or immersion may be used. The development time may be 1 minute or more and 10 minutes or less.
同時,光敏樹脂組成物可具有以下特徵:對於其中將含有光敏樹脂組成物的光敏樹脂層層壓於基板上的膜樣本,當用含有鎳的水溶液進行鍍鎳20分鐘或大於20分鐘時,由以下等式1定義的黏著力為90%或大於90%或90%或大於90%且100%或小於100%。 Meanwhile, the photosensitive resin composition may have the following characteristics: with respect to a film sample in which a photosensitive resin layer containing the photosensitive resin composition is laminated on a substrate, when nickel plating is performed with an aqueous solution containing nickel for 20 minutes or more, by The adhesive force defined by Equation 1 below is 90% or more or 90% or more and 100% or less.
[等式1] 黏著力(%)=(鍍鎳之後含有光敏樹脂組成物的光敏樹脂層與基板接觸的表面積/鍍鎳之前含有光敏樹脂組成物的光敏樹脂層與基板接觸的表面積)×100。 [Equation 1] Adhesion (%)=(surface area of the photosensitive resin layer containing the photosensitive resin composition after nickel plating in contact with the substrate/surface area of the photosensitive resin layer containing the photosensitive resin composition in contact with the substrate before nickel plating)×100.
由等式1定義的黏著力意謂鍍鎳之後含有光敏樹脂組成物的光敏樹脂層與基板接觸的表面積相對於鍍鎳之前含有光敏樹脂組成物的光敏樹脂層與基板接觸的表面積的百分比比率。 Adhesion defined by Equation 1 means the percentage ratio of the surface area of the photosensitive resin layer containing the photosensitive resin composition after nickel plating in contact with the substrate to the surface area of the photosensitive resin layer containing the photosensitive resin composition before nickel plating in contact with the substrate.
用於測定黏著力的表面積可經由光學顯微鏡影像量測。 The surface area used to determine adhesion can be measured via optical microscope images.
鍍鎳的特定條件不受特別限制,但例如藉由使用ICP NICORON GIB水溶液(100立方公分ICP NICORON GIB-M及50立方公分ICP NICORON GIB-1裝入於850立方公分蒸餾水中的混合物)作為含有鎳的水溶液,在50℃或大於50℃且100℃或小於100℃的條件下將其中將含有光敏樹脂組成物的光敏樹脂層層壓於基板上的膜樣本浸沒20分鐘或大於20分鐘或20分鐘或大於20分鐘且30分鐘或小於30分鐘,由此執行電鍍。 The specific conditions for nickel plating are not particularly limited, but for example, by using an aqueous solution of ICP NICORON GIB (a mixture of 100 cubic centimeters of ICP NICORON GIB-M and 50 cubic centimeters of ICP NICORON GIB-1 in 850 cubic centimeters of distilled water) as a An aqueous solution of nickel, immersing a film sample in which a photosensitive resin layer containing a photosensitive resin composition is laminated on a substrate under the conditions of 50°C or more and 100°C or less than 100°C for 20 minutes or more or 20 minutes or more 20 minutes or more and 30 minutes or less, thereby performing electroplating.
在鍍鎳之前,必須在藉由含有鎳的水溶液進行的浸沒製程之前進一步執行藉由催化劑水溶液進行的浸沒製程。藉由催化劑水溶液進行的浸沒製程的特定條件不受特別限制,但例如藉由使用鹽酸類鈀催化劑ICP ACCERA H水溶液(90立方公分35%鹽酸水溶液及40立方公分ICP ACCERA H裝入於870立方公分蒸餾水中的混合物)作為催化劑水溶液,在10℃或大於10℃且40℃或小於40℃的條件下可將其中將含有光敏樹脂組成物的光敏樹脂層層壓於基板上的膜樣本浸沒0.1分鐘或大於0.1分鐘且10分鐘或小於10分鐘。 Before nickel plating, the immersion process with the aqueous catalyst solution must be further performed before the immersion process with the aqueous solution containing nickel. The specific conditions of the immersion process by the catalyst aqueous solution are not particularly limited, but for example, by using a hydrochloric acid-based palladium catalyst, ICP ACCERA H aqueous solution (90 cubic centimeters of 35% hydrochloric acid aqueous solution and 40 cubic centimeters of ICP ACCERA H is charged in 870 cubic centimeters). mixture in distilled water) as an aqueous catalyst solution, the film sample in which the photosensitive resin layer containing the photosensitive resin composition is laminated on the substrate can be immersed for 0.1 minute at 10°C or more and 40°C or less or more than 0.1 minutes and 10 minutes or less.
此外,視需要,在藉由含有鎳的水溶液進行的浸沒製程之後,可進一步執行藉由含有金的水溶液進行的浸沒製程。藉由含有金的水溶液進行的浸沒製程的特定條件不受特別限制,但例如可在70℃或大於70℃且100℃或小於100℃的條件下,藉由使用含有金的水溶液將其中將含有光敏樹脂組成物的光敏樹脂層層壓於基板上的膜樣本浸沒1分鐘或大於1分鐘且20分鐘或小於20分鐘。 In addition, if necessary, after the immersion process with the nickel-containing aqueous solution, the immersion process with the gold-containing aqueous solution may be further performed. The specific conditions of the immersion process by the gold-containing aqueous solution are not particularly limited, but for example, under the conditions of 70°C or more and 100°C or less, by using the gold-containing aqueous solution The film sample in which the photosensitive resin layer of the photosensitive resin composition is laminated on the substrate is immersed for 1 minute or more and 20 minutes or less.
含有金的水溶液的特定實例可為IM GOLD IB MAKE UP SALT水溶液(80公克IM GOLD IB MAKE UP SALT及2.92公克氰化鉀金裝入於1000立方公分蒸餾水中的混合溶液)。 A specific example of the gold-containing aqueous solution may be IM GOLD IB MAKE UP SALT aqueous solution (a mixed solution of 80 grams of IM GOLD IB MAKE UP SALT and 2.92 grams of potassium gold cyanide charged in 1000 cubic centimeters of distilled water).
其中將含有光敏樹脂組成物的光敏樹脂層層壓於基板上的膜樣本可為其中將含有光敏樹脂組成物的光敏樹脂層層壓於任意基板上的層板,且用於量測由等式1定義的黏著力的基板的實例可為其上厚度為10微米或大於10微米且100毫米或小於100毫米的銅層安置於表面上的包銅層板。 The film sample in which the photosensitive resin layer containing the photosensitive resin composition is laminated on the substrate may be a laminate in which the photosensitive resin layer containing the photosensitive resin composition is laminated on an arbitrary substrate, and is used for measurement by the equation An example of a substrate with defined adhesion may be a copper clad laminate on which a copper layer having a thickness of 10 microns or more and 100 mm or less is disposed on the surface.
光敏樹脂層可包含一個實施例的光敏樹脂組成物的乾燥產物或固化產物。乾燥產物意謂經由一個實施例的光敏樹脂組成物的乾燥製程獲得的材料。固化產物意謂經由一個實施例的光敏樹脂組成物的固化製程獲得的材料。 The photosensitive resin layer may include a dried product or a cured product of the photosensitive resin composition of one embodiment. The dried product means the material obtained through the drying process of the photosensitive resin composition of one embodiment. The cured product refers to the material obtained through the curing process of the photosensitive resin composition of one embodiment.
光敏樹脂層可呈無開口的膜形式,或可具有帶開口的圖案形狀。 The photosensitive resin layer may be in the form of a film without openings, or may have a pattern shape with openings.
形成圖案形狀的光敏樹脂層的方法的實例可包含在將稍後描述的另一實施例的乾膜式光阻的光敏樹脂層層壓於基板上之後執行曝光及顯影的方法。另外,可提及將稍後描述的另一實施例的光敏元件的光敏樹脂層層壓於基板上且接著執行曝光及顯影的方法。 Examples of the method of forming the pattern-shaped photosensitive resin layer may include a method of performing exposure and development after laminating the photosensitive resin layer of the dry film type photoresist of another embodiment described later on a substrate. In addition, a method of laminating a photosensitive resin layer of a photosensitive element of another embodiment described later on a substrate and then performing exposure and development can be mentioned.
當另一實施例的乾膜式光阻或光敏元件在光敏樹脂層上具有保護膜時,可在將光敏樹脂層層壓於電路板或顯示裝置製造基板上的製程之前執行移除保護膜的製程。 When the dry film type photoresist or photosensitive element of another embodiment has a protective film on the photosensitive resin layer, the process of removing the protective film may be performed before the process of laminating the photosensitive resin layer on the circuit board or the display device manufacturing substrate Process.
此外,當另一實施例的乾膜式光阻或光敏元件具有層壓於光敏樹脂層的一側上的聚合物基板或基板膜時,可進一步執行在曝光製程之後立即移除聚合物基板或基板膜的製程。 In addition, when the dry film type photoresist or photosensitive element of another embodiment has a polymer substrate or a substrate film laminated on one side of the photosensitive resin layer, it may be further performed to remove the polymer substrate immediately after the exposure process or Process of substrate film.
量測由等式1定義的黏著力時的曝光條件是可使用曝光機器以20毫焦/平方公分或大於20毫焦/平方公分且200毫焦/平方公分或小於200毫焦/平方公分或50毫焦/平方公分或大於50毫焦/平方公分且100毫焦/平方公分或小於100毫焦/平方公分的曝光劑量來照射紫外線。曝光時間可為1秒或大於1秒且10分鐘或小於10分鐘或1秒或大於1秒且10秒或小於10秒。 The exposure conditions for measuring the adhesion defined by Equation 1 are that 20 mJ/cm 2 or more and 200 mJ/cm 2 or less or less using an exposure machine. The exposure dose of 50 mJ/cm2 or more and 100 mJ/cm2 or less is used to irradiate ultraviolet rays. The exposure time may be 1 second or more and 10 minutes or less or 1 second or more and 10 seconds or less.
量測由等式1定義的黏著力時的顯影條件是可使用濃度 為0.5重量%或大於0.5重量%且1.5重量%或小於1.5重量%或0.9重量%或大於0.9重量%且1.1重量%或小於1.1重量%的鹼性水溶液。鹼性水溶液的pH可在9或大於9且11或小於11的範圍內,且其溫度可根據光敏樹脂層的顯影特性來調節。鹼性水溶液的特定實例可包含碳酸鈉水溶液、碳酸鉀水溶液以及氫氧化鈉水溶液。 The developing condition when measuring the adhesion defined by Equation 1 is the usable concentration 0.5 wt % or more and 1.5 wt % or less of 1.5 wt % or 0.9 wt % or more and 1.1 wt % or less of an alkaline aqueous solution. The pH of the alkaline aqueous solution may be in the range of 9 or more and 11 or less, and the temperature thereof may be adjusted according to the developing characteristics of the photosensitive resin layer. Specific examples of the alkaline aqueous solution may include an aqueous sodium carbonate solution, an aqueous potassium carbonate solution, and an aqueous sodium hydroxide solution.
顯影可使用使鹼性水溶液與光敏樹脂層接觸的方法來執行,且作為特定接觸方法的實例,可使用噴塗或浸沒法。顯影時間可為30秒或大於30秒且10分鐘或小於10分鐘或30秒或大於30秒且2分鐘或小於2分鐘。 The development may be performed using a method of contacting an alkaline aqueous solution with the photosensitive resin layer, and as an example of a specific contact method, spraying or immersion may be used. The development time may be 30 seconds or more and 10 minutes or less or 30 seconds or more and 2 minutes or less.
用於量測由等式1定義的黏著力的光敏樹脂層的厚度可為20微米或大於20微米且80微米或小於80微米或30微米或大於30微米且60微米或小於60微米。此外,用於量測由等式1定義的黏著力的光敏樹脂層可具有平行於0.10平方公尺或大於0.10平方公尺且1.00平方公尺或小於1.00平方公尺或0.15平方公尺或大於0.15平方公尺且0.30平方公尺或小於0.30平方公尺的地面的橫截面面積。光敏樹脂層的厚度或橫截面積可經由光學顯微鏡量測。 The thickness of the photosensitive resin layer used to measure the adhesion defined by Equation 1 may be 20 micrometers or more and 80 micrometers or less or 30 micrometers or more than 30 micrometers and 60 micrometers or less. In addition, the photosensitive resin layer used to measure the adhesive force defined by Equation 1 may have parallel to 0.10 square meters or more and 1.00 square meters or less than 1.00 square meters or 0.15 square meters or more The cross-sectional area of the ground that is 0.15 square meters and 0.30 square meters or less. The thickness or cross-sectional area of the photosensitive resin layer can be measured through an optical microscope.
當由於電鍍製程中產生的氣泡而使由等式1定義的黏著力過度降低至小於90%時,可在最終獲得的電路板或顯示器中組態非所需電路。 When the adhesion defined by Equation 1 is excessively reduced to less than 90% due to air bubbles generated during the electroplating process, undesirable circuits can be configured in the resulting circuit board or display.
按固體含量計,光敏樹脂組成物可包含20重量%或大於20重量%且80重量%或小於80重量%的鹼性可顯影黏合劑樹脂、1重量%或大於1重量%且10重量%或小於10重量%的光聚合起始劑以及10重量%或大於10重量%且70重量%或小於70重量% 的光可聚合化合物。 In terms of solid content, the photosensitive resin composition may comprise 20 wt % or more and 80 wt % or less of an alkali developable binder resin, 1 wt % or more and 10 wt % or Less than 10% by weight of photopolymerization initiator and 10% by weight or more and 70% by weight or less photopolymerizable compounds.
光敏樹脂組成物可更包含溶劑。溶劑一般由甲基乙基酮(methyl ethyl ketone;MEK)、甲醇、THF、甲苯以及丙酮中選出且不特別限制於此,且其含量亦可根據光聚合起始劑、鹼性可顯影黏合劑樹脂以及光可聚合化合物的含量來調節。 The photosensitive resin composition may further contain a solvent. The solvent is generally selected from methyl ethyl ketone (MEK), methanol, THF, toluene and acetone and is not particularly limited thereto, and its content may also be determined according to the photopolymerization initiator, alkali developable adhesive The content of the resin and the photopolymerizable compound is adjusted.
此外,視需要,光敏樹脂組成物可更包含其他添加劑。其他添加劑為塑化劑且可包含呈鄰苯二甲酸酯形式的鄰苯二甲酸二丁酯、鄰苯二甲酸二庚酯、鄰苯二甲酸二辛酯、鄰苯二甲酸二烯丙酯;呈二醇酯形式的三乙二醇二乙酸酯、四乙二醇二乙酸酯;呈酸性醯胺形式的對甲苯磺醯胺、苯磺醯胺、正丁基苯磺醯胺;磷酸三苯酯等。 In addition, the photosensitive resin composition may further contain other additives as necessary. Other additives are plasticizers and may contain dibutyl phthalate, diheptyl phthalate, dioctyl phthalate, diallyl phthalate in the form of phthalates ; triethylene glycol diacetate, tetraethylene glycol diacetate in the form of glycol esters; p-toluenesulfonamide, benzenesulfonamide, n-butylbenzenesulfonamide in the form of acid amides; Triphenyl phosphate, etc.
在本揭露內容中,可添加無色染料或著色材料以改善光敏樹脂組成物的處理特性。無色染料的實例包含三(4-二甲胺基-2-甲基苯基)甲烷、三(4-二甲胺基-2甲基苯基)甲烷以及螢烷(fluorane)染料。其中,當使用無色結晶紫時,對比度良好,其為較佳的。當含有無色染料時,以光敏樹脂組成物計的含量可為0.1重量%或大於0.1重量%且10重量%或小於10重量%。自展現對比度的觀點來看,0.1重量%或大於0.1重量%為較佳的,且自維持儲存穩定性的觀點來看,10重量%或小於10重量%為較佳的。 In the present disclosure, leuco dyes or coloring materials may be added to improve the handling characteristics of the photosensitive resin composition. Examples of leuco dyes include tris(4-dimethylamino-2-methylphenyl)methane, tris(4-dimethylamino-2methylphenyl)methane, and fluorane dyes. Among them, when leuco crystal violet is used, the contrast ratio is good, which is preferable. When the leuco dye is contained, the content based on the photosensitive resin composition may be 0.1% by weight or more and 10% by weight or less. From the viewpoint of exhibiting contrast, 0.1% by weight or more is preferable, and from the viewpoint of maintaining storage stability, 10% by weight or less is preferable.
著色材料的實例可包含單水合甲苯磺酸、品紅、酞菁綠、金胺鹼、順洋紅(paramagenta)、結晶紫、甲基橙、尼羅藍2B(Nile blue 2B)、維多利亞藍(victoria blue)、孔雀綠、鑽石綠、鹼性藍20以及類似者。當包含著色材料時,按光敏樹脂組成物計,所添加的量可為0.001重量%或大於0.001重量%且1重量%或小於1 重量%。當含量為0.001重量%或大於0.001重量%時,其具有改善可操縱性的效果,且含量為1重量%或小於1重量%,其具有維持儲存穩定性的效果。 Examples of the coloring material may include toluenesulfonic acid monohydrate, magenta, phthalocyanine green, auramine base, paramagenta, crystal violet, methyl orange, Nile blue 2B, victoria blue blue), malachite green, diamond green, basic blue 20 and the like. When the coloring material is included, the added amount may be 0.001 wt % or more and 1 wt % or less based on the photosensitive resin composition weight%. When the content is 0.001% by weight or more, it has the effect of improving handleability, and when the content is 1% by weight or less, it has the effect of maintaining storage stability.
另外,其他添加劑可更包含熱聚合抑制劑、染料、褪色劑、黏著加速劑。 In addition, other additives may further include thermal polymerization inhibitors, dyes, discoloration agents, and adhesion accelerators.
2.乾膜式光阻2. Dry film photoresist
根據本揭露內容的另一實施例,可提供一種乾膜式光阻,包含含有一個實施例的光敏樹脂組成物的光敏樹脂層。關於光敏樹脂組成物的細節包含上文在一個實施例中所描述的全部內容。 According to another embodiment of the present disclosure, a dry film photoresist can be provided, including a photosensitive resin layer including the photosensitive resin composition of one embodiment. Details about the photosensitive resin composition include all the content described above in one embodiment.
具體言之,光敏樹脂層可包含一個實施例的光敏樹脂組成物的乾燥產物或固化產物。乾燥產物意謂經由一個實施例的光敏樹脂組成物的乾燥製程獲得的材料。固化產物意謂經由一個實施例的光敏樹脂組成物的固化製程獲得的材料。光敏樹脂層的厚度不受特別限制,但例如其可在0.01微米至1毫米的範圍內自由地調節。 Specifically, the photosensitive resin layer may include a dried product or a cured product of the photosensitive resin composition of one embodiment. The dried product means the material obtained through the drying process of the photosensitive resin composition of one embodiment. The cured product refers to the material obtained through the curing process of the photosensitive resin composition of one embodiment. The thickness of the photosensitive resin layer is not particularly limited, but, for example, it can be freely adjusted within a range of 0.01 μm to 1 mm.
舉例而言,光敏樹脂層可包含:鹼性可顯影黏合劑樹脂,其包含由化學式1表示的重複單元;由化學式2表示的重複單元;由化學式3表示的重複單元;以及由化學式4表示的重複單元,及光可聚合化合物。關於包含由化學式1表示的重複單元;由化學式2表示的重複單元;由化學式3表示的重複單元;以及由化學式4表示的重複單元的鹼性可顯影黏合劑樹脂;及光可聚合化合物的細節包含上文在一個實施例中所描述的全部內容。
For example, the photosensitive resin layer may include: an alkali developable binder resin including a repeating unit represented by Chemical Formula 1; a repeating unit represented by Chemical Formula 2; a repeating unit represented by
乾膜式光阻的厚度不受特別限制,但例如其可在0.01微米至1毫米的範圍內自由地調節。當乾膜式光阻的厚度增加或減 少特定值時,乾膜式光阻中所量測的物理特性亦可改變一定數值。 The thickness of the dry film type photoresist is not particularly limited, but, for example, it can be freely adjusted in the range of 0.01 μm to 1 mm. When the thickness of the dry film photoresist increases or decreases When less than a specific value, the physical properties measured in the dry film photoresist can also change by a certain value.
乾膜式光阻可更包含基板膜及保護膜。基板膜充當乾膜式光阻的製造期間的光敏樹脂層的支撐件且有助於具有黏著強度的光敏樹脂層的曝光期間的處理。 The dry film photoresist may further include a substrate film and a protective film. The substrate film acts as a support for the photosensitive resin layer during manufacture of the dry film photoresist and facilitates handling during exposure of the photosensitive resin layer with adhesive strength.
各種塑膠膜可用作基板膜,且其實例可包含至少一種由以下所組成的族群中選出的塑膠膜:丙烯酸膜、聚對苯二甲酸伸乙酯(polyethylene terephthalate;PET)膜、三乙醯纖維素(triacetylcellulose;TAC)膜、聚降冰片烯(polynorbornene;PNB)膜、環烯聚合物(cycloolefin polymer;COP)膜以及聚碳酸酯(polycarbonate;PC)膜。基板膜的厚度不受特別限制,且例如其可在0.01微米至1毫米的範圍內自由地調節。 Various plastic films can be used as the substrate film, and examples thereof can include at least one plastic film selected from the group consisting of: acrylic film, polyethylene terephthalate (PET) film, triacetate Cellulose (triacetylcellulose; TAC) film, polynorbornene (polynorbornene; PNB) film, cycloolefin polymer (cycloolefin polymer; COP) film and polycarbonate (polycarbonate; PC) film. The thickness of the substrate film is not particularly limited, and, for example, it can be freely adjusted within a range of 0.01 μm to 1 mm.
保護膜防止在處理期間對抗蝕劑的損壞且用作保護光敏樹脂層免受諸如灰塵的外來物質的保護蓋,且層壓於其上未形成基板膜的光敏樹脂層的背側上。保護膜用於保護光敏樹脂層免受外部影響。當乾膜式光阻施加至後段製程時,其需要容易脫離且其需要適當的分離性及黏著性使得其在儲存及分佈期間不會變形。 The protective film prevents damage to the resist during processing and serves as a protective cover to protect the photosensitive resin layer from foreign substances such as dust, and is laminated on the backside of the photosensitive resin layer on which the substrate film is not formed. The protective film is used to protect the photosensitive resin layer from external influences. When the dry film photoresist is applied to the back end process, it needs to be easily released and it needs to have proper separation and adhesion so that it does not deform during storage and distribution.
各種塑膠膜可用作保護膜,且其實例可包含至少一種由以下所組成的族群中選出的塑膠膜:丙烯酸膜、聚乙烯(polyethylene;PE)膜、聚對苯二甲酸伸乙酯(PET)膜、三乙醯纖維素(TAC)膜、聚降冰片烯(PNB)膜、環烯聚合物(COP)膜以及聚碳酸酯(PC)膜。保護膜的厚度不受特別限制,且例如其可在0.01微米至1毫米的範圍內自由地調節。 Various plastic films may be used as the protective film, and examples thereof may include at least one plastic film selected from the group consisting of: acrylic film, polyethylene (PE) film, polyethylene terephthalate (PET) ) film, triacetyl cellulose (TAC) film, polynorbornene (PNB) film, cycloolefin polymer (COP) film, and polycarbonate (PC) film. The thickness of the protective film is not particularly limited, and, for example, it can be freely adjusted within a range of 0.01 μm to 1 mm.
同時,乾膜式光阻可滿足以下(a)或(b)中的任一者:(a)對於經由曝光及顯影光敏樹脂層獲得的抗蝕劑圖案,在 相互鄰接的光敏樹脂層線之間的空間中,殘留於底表面上的抗蝕劑殘餘物的最大足長度為1微米或小於1微米,或(b)對於其中將乾膜式光阻的光敏樹脂層層壓於基板上的膜樣本,當用含有鎳的水溶液進行鍍鎳20分鐘或大於20分鐘時,由以下等式2定義的黏著力為90%或大於90%。 Meanwhile, the dry film photoresist may satisfy either of the following (a) or (b): (a) For the resist pattern obtained by exposing and developing the photosensitive resin layer, in The maximum foot length of the resist residue remaining on the bottom surface in the space between the lines of photosensitive resin layers adjacent to each other is 1 μm or less, or (b) for the photosensitive resin in which the dry film type photoresist is applied The film sample in which the resin layer is laminated on the substrate, when nickel-plated with an aqueous solution containing nickel for 20 minutes or more, has an adhesion force defined by the following Equation 2 of 90% or more.
[等式2]黏著力(%)=(鍍鎳之後乾膜式光阻的光敏樹脂層與基板接觸的表面積/鍍鎳之前乾膜式光阻的光敏樹脂層與基板接觸的表面積)×100。 [Equation 2] Adhesion (%)=(surface area of photosensitive resin layer of dry film photoresist in contact with substrate after nickel plating/surface area of photosensitive resin layer of dry film photoresist in contact with substrate before nickel plating)×100 .
具體言之,對於經由曝光及顯影光敏樹脂層獲得的抗蝕劑圖案,在相互鄰接的光敏樹脂層線之間的空間中,殘留於底表面上的抗蝕劑殘餘物的最大足長度可為1微米或小於1微米、0.7微米或小於0.7微米、0.1微米或大於0.1微米且1微米或小於1微米、0.1微米或大於0.1微米且0.7微米或小於0.7微米、0.4微米或大於0.4微米且0.7微米或小於0.7微米或0.5微米或大於0.5微米且0.6微米或小於0.6微米。 Specifically, for a resist pattern obtained by exposing and developing the photosensitive resin layer, the maximum foot length of the resist residue remaining on the bottom surface in the space between the mutually adjacent photosensitive resin layer lines may be 1 micron or less, 0.7 microns or less than 0.7 microns, 0.1 microns or more than 0.1 microns and 1 micron or less, 0.1 microns or more than 0.1 microns and 0.7 microns or less than 0.7 microns, 0.4 microns or more than 0.4 microns and 0.7 microns microns or less than 0.7 microns or 0.5 microns or more than 0.5 microns and 0.6 microns or less than 0.6 microns.
經由選擇性曝光及顯影光敏樹脂組成物獲得抗蝕劑圖案,使得光敏樹脂組成物的一部分保留為光敏樹脂層以形成光敏樹脂層線且可藉由顯影移除其一部分以在光敏樹脂層線之間形成空間。 The resist pattern is obtained by selectively exposing and developing the photosensitive resin composition, so that a part of the photosensitive resin composition remains as the photosensitive resin layer to form the photosensitive resin layer line and a part thereof can be removed by developing to be in the photosensitive resin layer line. form space.
此時,未經由顯影移除而殘留的抗蝕劑殘餘物可存在於相互鄰接的光敏樹脂層線之間的空間中的底表面上,且當此抗蝕劑殘餘物的足長度過度升高至高於1微米時,圖案的底部部分處可過度出現基腳現象,使得難以實施具有高解析度的抗蝕劑圖案。 At this time, a resist residue remaining without being removed by development may exist on the bottom surface in the space between the photosensitive resin layer lines adjacent to each other, and when the foot length of this resist residue is excessively raised Above 1 micron, the footing phenomenon may occur excessively at the bottom portion of the pattern, making it difficult to implement a resist pattern with high resolution.
具體言之,抗蝕劑殘餘物的足長度可為由光敏樹脂層線的一側與底表面及抗蝕劑殘餘物接觸所形成的邊界線上的一個點與抗蝕劑殘餘物在由自一個點開始的光敏樹脂層線的一側的垂直線及自一個點開始的底表面的垂直線形成的平面的橫截面與由底表面及抗蝕劑殘餘物形成的分界線交叉的交叉點之間的最短直線距離。 Specifically, the full length of the resist residue may be a point on the boundary line formed by the contact of one side of the photosensitive resin layer line with the bottom surface and the resist residue and the resist residue on the boundary formed by a free one Between a cross section of a plane formed by a vertical line on one side of the photosensitive resin layer line starting from a point and a vertical line on the bottom surface starting from a point and the intersection point where the dividing line formed by the bottom surface and the resist residue intersects the shortest straight-line distance.
抗蝕劑殘餘物的足長度是參考下圖2中的抗蝕劑圖案的示意性橫截面圖來描述。由光敏樹脂層線的一側與底表面及抗蝕劑殘餘物接觸所形成的邊界線上的一個點對應於由d1指示的點,且抗蝕劑殘餘物在由自一個點開始的光敏樹脂層線的一側的垂直線及自一個點開始的底表面的垂直線形成的平面的橫截面與由底表面及抗蝕劑殘餘物形成的分界線交叉的交叉點對應於由d2指示的點。d1與d2之間的最短直線距離對應於抗蝕劑殘餘物的足長度。 The full length of the resist residue is described with reference to the schematic cross-sectional view of the resist pattern in FIG. 2 below. One point on the boundary line formed by the contact of one side of the photosensitive resin layer line with the bottom surface and the resist residue corresponds to the point indicated by d1, and the resist residue is on the photosensitive resin layer starting from one point. The cross-section of the plane formed by the vertical line on one side of the line and the vertical line of the bottom surface from one point intersects the dividing line formed by the bottom surface and the resist residue. The intersection corresponds to the point indicated by d2. The shortest straight-line distance between d1 and d2 corresponds to the full length of the resist residue.
抗蝕劑殘餘物的足長度可經由光學顯微鏡(蔡司AXIOPHOT顯微鏡)如圖1中所示來量測。 The full length of the resist residue can be measured via an optical microscope (Zeiss AXIOPHOT microscope) as shown in FIG. 1 .
更具體言之,在用於量測抗蝕劑殘餘物的足長度的抗蝕劑圖案中,光敏樹脂層線的上端的線寬與相互鄰接的光敏樹脂層線的上端部分之間的間隔之間的比率可為1:0.5至1:2或1:0.9至1:1.1具體言之,光敏樹脂層線的上端的線寬對應於下圖2中的L,且相互鄰接的光敏樹脂層線的上端部分之間的間隔對應於下圖2中的S。 More specifically, in the resist pattern for measuring the full length of the resist residue, the difference between the line width of the upper end of the photosensitive resin layer line and the interval between the upper end portions of the photosensitive resin layer lines adjacent to each other. The ratio can be 1:0.5 to 1:2 or 1:0.9 to 1:1.1 Specifically, the line width of the upper end of the photosensitive resin layer line corresponds to L in Figure 2 below, and the photosensitive resin layer lines adjacent to each other The interval between the upper end parts of , corresponds to S in Figure 2 below.
此外,用於量測抗蝕劑殘餘物的足長度的光敏樹脂層線的上端的線寬可為5微米或大於5微米且15微米或小於15微米 或9微米或大於9微米且11微米或小於11微米。 In addition, the line width of the upper end of the photosensitive resin layer line for measuring the full length of the resist residue may be 5 micrometers or more and 15 micrometers or less or 9 microns or more and 11 microns or less.
用於量測抗蝕劑殘餘物的足長度的光敏樹脂層的厚度可為20微米或大於20微米且30微米或小於30微米或24微米或大於24微米且26微米或小於26微米。光敏樹脂層的厚度對應於下圖2中的T。 The thickness of the photosensitive resin layer for measuring the full length of the resist residue may be 20 microns or more and 30 microns or less or 24 microns or more and 26 microns or less. The thickness of the photosensitive resin layer corresponds to T in Fig. 2 below.
量測抗蝕劑殘餘物的足長度時的曝光條件是可使用曝光機器以35毫焦/平方公分或大於35毫焦/平方公分且45毫焦/平方公分或小於45毫焦/平方公分或39毫焦/平方公分或大於39毫焦/平方公分且41毫焦/平方公分或小於41毫焦/平方公分的曝光劑量來照射紫外線。曝光時間可為1分鐘或大於1分鐘且10分鐘或小於10分鐘。 The exposure conditions for measuring the full length of the resist residue are 35 mJ/cm 2 or more and 45 mJ/cm 2 or less than 45 mJ/cm 2 or The exposure dose of 39 mJ/cm 2 or more and 41 mJ/cm 2 or less is used to irradiate ultraviolet rays. The exposure time can be 1 minute or more and 10 minutes or less.
量測抗蝕劑殘餘物的足長度時的顯影條件是可使用濃度為0.5重量%或大於0.5重量%且1.5重量%或小於1.5重量%或0.9重量%或大於0.9重量%且1.1重量%或小於1.1重量%的鹼性水溶液。鹼性水溶液的pH可在9或大於9且11或小於11的範圍內,且其溫度可根據光敏樹脂層的顯影特性來調節。鹼性水溶液的特定實例可包含碳酸鈉水溶液、碳酸鉀水溶液以及氫氧化鈉水溶液。 The development conditions when measuring the full length of the resist residue are that a concentration of 0.5 wt % or more and 1.5 wt % or less than 1.5 wt % or 0.9 wt % or more and 1.1 wt % or more can be used. Less than 1.1 wt% alkaline aqueous solution. The pH of the alkaline aqueous solution may be in the range of 9 or more and 11 or less, and the temperature thereof may be adjusted according to the developing characteristics of the photosensitive resin layer. Specific examples of the alkaline aqueous solution may include an aqueous sodium carbonate solution, an aqueous potassium carbonate solution, and an aqueous sodium hydroxide solution.
顯影可使用使鹼性水溶液與光敏樹脂層接觸的方法來執行,且作為特定接觸方法的實例,可使用噴塗或浸沒法。顯影時間可為1分鐘或大於1分鐘且10分鐘或小於10分鐘。 The development may be performed using a method of contacting an alkaline aqueous solution with the photosensitive resin layer, and as an example of a specific contact method, spraying or immersion may be used. The development time may be 1 minute or more and 10 minutes or less.
同時,乾膜式光阻可具有以下特徵:對於其中將乾膜式光阻的光敏樹脂層層壓於基板上的膜樣本,當用含有鎳的水溶液進行鍍鎳20分鐘或大於20分鐘時,由以下等式2定義的黏著力為90%或大於90%或90%或大於90%且100%或小於100%。 Meanwhile, the dry film type photoresist may have the following characteristics: for a film sample in which the photosensitive resin layer of the dry film type photoresist is laminated on the substrate, when nickel plating is performed with an aqueous solution containing nickel for 20 minutes or more, The adhesive force defined by the following Equation 2 is 90% or more or 90% or more and 100% or less.
[等式2] 黏著力(%)=(鍍鎳之後乾膜式光阻的光敏樹脂層與基板接觸的表面積/鍍鎳之前乾膜式光阻的光敏樹脂層與基板接觸的表面積)×100。 [Equation 2] Adhesion (%)=(surface area of photosensitive resin layer of dry film photoresist in contact with substrate after nickel plating/surface area of photosensitive resin layer of dry film photoresist in contact with substrate before nickel plating)×100.
由等式2定義的黏著力意謂鍍鎳之後乾膜式光阻的光敏樹脂層與基板接觸的表面積相對於鍍鎳之前乾膜式光阻的光敏樹脂層與基板接觸的表面積的百分比比率。 Adhesion defined by Equation 2 means the percentage ratio of the surface area of the photoresist layer of the dry film photoresist in contact with the substrate after nickel plating relative to the surface area of the photoresist layer of the dry film photoresist in contact with the substrate before nickel plating.
用於測定黏著力的表面積可經由光學顯微鏡影像量測。 The surface area used to determine adhesion can be measured via optical microscope images.
鍍鎳的特定條件不受特別限制,但例如藉由使用ICP NICORON GIB水溶液(100立方公分ICP NICORON GIB-M及50立方公分ICP NICORON GIB-1於850立方公分蒸餾水中的混合物)作為含有鎳的水溶液,在50℃或大於50℃且100℃或小於100℃的條件下將其中將含有光敏樹脂組成物的光敏樹脂層層壓於基板上的膜樣本浸沒20分鐘或大於20分鐘或20分鐘或大於20分鐘且30分鐘或小於30分鐘,由此執行電鍍。 The specific conditions for nickel plating are not particularly limited, but for example, by using an aqueous solution of ICP NICORON GIB (a mixture of 100 cc of ICP NICORON GIB-M and 50 cc of ICP NICORON GIB-1 in 850 cc of distilled water) as a nickel-containing Aqueous solution, immersing a film sample in which a photosensitive resin layer containing a photosensitive resin composition is laminated on a substrate under the conditions of 50°C or more and 100°C or less than 100°C for 20 minutes or more or 20 minutes or More than 20 minutes and 30 minutes or less, thereby performing electroplating.
在鍍鎳之前,必須在藉由含有鎳的水溶液進行的浸沒製程之前進一步執行藉由催化劑水溶液進行的浸沒製程。藉由催化劑水溶液進行的浸沒製程的特定條件不受特別限制,但例如藉由使用鹽酸類鈀催化劑ICP ACCERA H水溶液(90立方公分35%鹽酸水溶液及40立方公分ICP ACCERA H裝入於870立方公分蒸餾水中的混合物)作為催化劑水溶液,在10℃或大於10℃且40℃或小於40℃的條件下可將其中將含有光敏樹脂組成物的光敏樹脂層層壓於基板上的膜樣本浸沒0.1分鐘或大於0.1分鐘且10分鐘或小於10分鐘。 Before nickel plating, the immersion process with the aqueous catalyst solution must be further performed before the immersion process with the aqueous solution containing nickel. The specific conditions of the immersion process by the catalyst aqueous solution are not particularly limited, but for example, by using a hydrochloric acid-based palladium catalyst, ICP ACCERA H aqueous solution (90 cubic centimeters of 35% hydrochloric acid aqueous solution and 40 cubic centimeters of ICP ACCERA H is charged in 870 cubic centimeters). mixture in distilled water) as an aqueous catalyst solution, the film sample in which the photosensitive resin layer containing the photosensitive resin composition is laminated on the substrate can be immersed for 0.1 minute at 10°C or more and 40°C or less or more than 0.1 minutes and 10 minutes or less.
此外,視需要,在藉由含有鎳的水溶液進行的浸沒製程之後,可進一步執行藉由含有金的水溶液進行的浸沒製程。藉由含有金的水溶液進行的浸沒製程的特定條件不受特別限制,但例如藉由使用含有金的水溶液,可在70℃或大於70℃且100℃或小於100℃的條件下,將其中將含有光敏樹脂組成物的光敏樹脂層層壓於基板上的膜樣本浸沒1分鐘或大於1分鐘且20分鐘或小於20分鐘。 In addition, if necessary, after the immersion process with the nickel-containing aqueous solution, the immersion process with the gold-containing aqueous solution may be further performed. The specific conditions of the immersion process by the gold-containing aqueous solution are not particularly limited, but for example, by using the gold-containing aqueous solution, the immersion process can be carried out at 70°C or more and 100°C or less. The film sample in which the photosensitive resin layer containing the photosensitive resin composition was laminated on the substrate was immersed for 1 minute or more and 20 minutes or less.
含有金的水溶液的特定實例可為IM GOLD IB MAKE UP SALT水溶液(80公克IM GOLD IB MAKE UP SALT及2.92公克氰化鉀金裝入於1000立方公分蒸餾水中的混合溶液)。 A specific example of the gold-containing aqueous solution may be IM GOLD IB MAKE UP SALT aqueous solution (a mixed solution of 80 grams of IM GOLD IB MAKE UP SALT and 2.92 grams of potassium gold cyanide charged in 1000 cubic centimeters of distilled water).
其中將含有光敏樹脂組成物的光敏樹脂層層壓於基板上的膜樣本可為其中將含有光敏樹脂組成物的光敏樹脂層層壓於任意基板上的層板,且用於量測由等式2定義的黏著力的基板的實例可為其上厚度為10微米或大於10微米且100毫米或小於100毫米的銅層安置於表面上的包銅層板。 The film sample in which the photosensitive resin layer containing the photosensitive resin composition is laminated on the substrate may be a laminate in which the photosensitive resin layer containing the photosensitive resin composition is laminated on an arbitrary substrate, and is used for measurement by the equation 2 An example of a substrate with defined adhesion may be a copper clad laminate on which a copper layer having a thickness of 10 microns or more and 100 mm or less is disposed on the surface.
光敏樹脂層可包含一個實施例的光敏樹脂組成物的乾燥產物或固化產物。乾燥產物意謂經由一個實施例的光敏樹脂組成物的乾燥製程獲得的材料。固化產物意謂經由一個實施例的光敏樹脂組成物的固化製程獲得的材料。 The photosensitive resin layer may include a dried product or a cured product of the photosensitive resin composition of one embodiment. The dried product means the material obtained through the drying process of the photosensitive resin composition of one embodiment. The cured product refers to the material obtained through the curing process of the photosensitive resin composition of one embodiment.
光敏樹脂層可呈無開口的膜形式,或可具有帶開口的圖案形狀。 The photosensitive resin layer may be in the form of a film without openings, or may have a pattern shape with openings.
形成圖案化光敏樹脂層的方法的實例可包含將稍後描述的另一實施例的乾膜式光阻的光敏樹脂層層壓於基板上且接著執行曝光及顯影的方法。另外,可提及將稍後描述的另一實施例的光 敏元件的光敏樹脂層層壓於基板上且接著執行曝光及顯影的方法。 An example of the method of forming the patterned photosensitive resin layer may include a method of laminating a photosensitive resin layer of a dry film type photoresist of another embodiment described later on a substrate and then performing exposure and development. In addition, light of another embodiment to be described later may be mentioned The photosensitive resin layer of the sensitive element is laminated on the substrate and then a method of exposing and developing is performed.
當另一實施例的乾膜式光阻或光敏元件在光敏樹脂層上具有保護膜時,可在將光敏樹脂層層壓於電路板或顯示裝置製造基板上的製程之前執行移除保護膜的製程。 When the dry film type photoresist or photosensitive element of another embodiment has a protective film on the photosensitive resin layer, the process of removing the protective film may be performed before the process of laminating the photosensitive resin layer on the circuit board or the display device manufacturing substrate Process.
此外,當另一實施例的乾膜式光阻或光敏元件具有層壓於光敏樹脂層的一側上的聚合物基板或基板膜時,可進一步執行在曝光製程之後立即移除聚合物基板或基板膜的製程。 In addition, when the dry film type photoresist or photosensitive element of another embodiment has a polymer substrate or a substrate film laminated on one side of the photosensitive resin layer, it may be further performed to remove the polymer substrate immediately after the exposure process or Process of substrate film.
量測由等式2定義的黏著力時的曝光條件是可使用曝光機器以20毫焦/平方公分或大於20毫焦/平方公分且200毫焦/平方公分或小於200毫焦/平方公分或50毫焦/平方公分或大於50毫焦/平方公分且100毫焦/平方公分或小於100毫焦/平方公分的曝光劑量來照射紫外線。曝光時間可為1秒或大於1秒且10分鐘或小於10分鐘或1秒或大於1秒且10秒或小於10秒。 The exposure conditions for measuring the adhesion defined by Equation 2 are that 20 mJ/cm 2 or more and 200 mJ/cm 2 or less or less than 200 mJ/cm 2 or The exposure dose of 50 mJ/cm2 or more and 100 mJ/cm2 or less is used to irradiate ultraviolet rays. The exposure time may be 1 second or more and 10 minutes or less or 1 second or more and 10 seconds or less.
量測由等式2定義的黏著力時的顯影條件是可使用濃度為0.5重量%或大於0.5重量%且1.5重量%或小於1.5重量%或0.9重量%或大於0.9重量%且1.1重量%或小於1.1重量%的鹼性水溶液。鹼性水溶液的pH可在9或大於9且11或小於11的範圍內,且其溫度可根據光敏樹脂層的顯影特性來調節。鹼性水溶液的特定實例可包含碳酸鈉水溶液、碳酸鉀水溶液以及氫氧化鈉水溶液。 The developing conditions when measuring the adhesive force defined by Equation 2 are that a concentration of 0.5 wt % or more and 1.5 wt % or less than 1.5 wt % or 0.9 wt % or more and 1.1 wt % or more can be used. Less than 1.1 wt% alkaline aqueous solution. The pH of the alkaline aqueous solution may be in the range of 9 or more and 11 or less, and the temperature thereof may be adjusted according to the developing characteristics of the photosensitive resin layer. Specific examples of the alkaline aqueous solution may include an aqueous sodium carbonate solution, an aqueous potassium carbonate solution, and an aqueous sodium hydroxide solution.
顯影可使用使鹼性水溶液與光敏樹脂層接觸的方法來執行,且作為特定接觸方法的實例,可使用噴塗或浸沒法。顯影時間可為30秒或大於30秒且10分鐘或小於10分鐘或30秒或大於30秒且2分鐘或小於2分鐘。 The development may be performed using a method of contacting an alkaline aqueous solution with the photosensitive resin layer, and as an example of a specific contact method, spraying or immersion may be used. The development time may be 30 seconds or more and 10 minutes or less or 30 seconds or more and 2 minutes or less.
用於量測由等式2定義的黏著力的光敏樹脂層的厚度可為20微米或大於20微米且80微米或小於80微米或30微米或大於30微米且60微米或小於60微米。此外,用於量測由等式2定義的黏著力的光敏樹脂層可具有平行於0.10平方公尺或大於0.10平方公尺且1.00平方公尺或小於1.00平方公尺或0.15平方公尺或大於0.15平方公尺且0.30平方公尺或小於0.30平方公尺的地面的橫截面面積。光敏樹脂層的厚度或橫截面積可經由光學顯微鏡量測。 The thickness of the photosensitive resin layer used to measure the adhesion defined by Equation 2 may be 20 micrometers or more and 80 micrometers or less or 30 micrometers or more than 30 micrometers and 60 micrometers or less. In addition, the photosensitive resin layer used to measure the adhesive force defined by Equation 2 may have parallel to 0.10 square meters or more and 1.00 square meters or less than 1.00 square meters or 0.15 square meters or more The cross-sectional area of the ground that is 0.15 square meters and 0.30 square meters or less. The thickness or cross-sectional area of the photosensitive resin layer can be measured through an optical microscope.
當由於電鍍製程中產生的氣泡而使由等式2定義的黏著力過度降低至小於90%時,可在最終獲得的電路板或顯示器中組態非所需電路。 When the adhesion defined by Equation 2 is excessively reduced to less than 90% due to air bubbles generated during the electroplating process, undesirable circuits can be configured in the resulting circuit board or display.
製造乾膜式光阻的方法的實例不受特別限制,且例如使用習知塗佈方法將一個實施例的光敏樹脂組成物塗佈至諸如聚對苯二甲酸伸乙酯的習知基板膜上且接著乾燥,且將乾燥的光敏樹脂層的上表面與諸如聚乙烯的習知保護膜層壓在一起以產生乾膜。 An example of a method of manufacturing a dry film type photoresist is not particularly limited, and for example, the photosensitive resin composition of one embodiment is coated on a conventional substrate film such as polyethylene terephthalate using a conventional coating method And then dried, and the upper surface of the dried photosensitive resin layer is laminated with a conventional protective film such as polyethylene to produce a dry film.
塗佈一個實施例的光敏樹脂組成物的方法不受特別限制,且可使用諸如使用塗佈棒的方法。 The method of coating the photosensitive resin composition of one embodiment is not particularly limited, and a method such as using a coating bar may be used.
乾燥塗佈的光敏樹脂組成物的步驟可藉由加熱構件(諸如熱空氣烘箱、加熱板、熱空氣循環爐以及紅外線爐)執行,且可在50℃或大於50℃且100℃或小於100℃的溫度下執行。 The step of drying the coated photosensitive resin composition may be performed by a heating member such as a hot air oven, a hot plate, a hot air circulation oven, and an infrared oven, and may be performed at 50° C. or more and 100° C. or less than 100° C. performed at the temperature.
3.光敏元件3. Photosensitive element
根據本揭露內容的另一實施例,可提供一種光敏元件,包含聚合物基板及形成於聚合物基板上的光敏樹脂層;且滿足以下
(a)或(b)中的任一者:
(a)對於經由曝光及顯影光敏樹脂層獲得的抗蝕劑圖案,在相互鄰接的光敏樹脂層線之間的空間中,殘留於底表面上的抗蝕劑殘餘物的最大足長度為1微米或小於1微米,或
(b)對於其中將光敏樹脂層層壓於基板上的膜樣本,當用含有鎳的水溶液進行鍍鎳20分鐘或大於20分鐘時,由以下等式3定義的黏著力為90%或大於90%。
According to another embodiment of the present disclosure, a photosensitive element can be provided, which includes a polymer substrate and a photosensitive resin layer formed on the polymer substrate; and satisfies the following
either (a) or (b):
(a) For the resist pattern obtained by exposing and developing the photosensitive resin layer, the maximum foot length of the resist residue remaining on the bottom surface in the space between the mutually adjoining photosensitive resin layer lines is 1 μm or less than 1 micron, or
(b) For a film sample in which a photosensitive resin layer is laminated on a substrate, when nickel plating is performed with an aqueous solution containing nickel for 20 minutes or more, the adhesion defined by the following
[等式3]黏著力(%)=(鍍鎳之後光敏元件的光敏樹脂層與基板接觸的表面積/鍍鎳之前光敏元件的光敏樹脂層與基板接觸的表面積)×100。 [Equation 3] Adhesion (%)=(surface area of the photosensitive resin layer of the photosensitive element in contact with the substrate after nickel plating/surface area of the photosensitive resin layer of the photosensitive element in contact with the substrate before nickel plating)×100.
關於光敏樹脂層及抗蝕劑殘餘物的足長度及黏著力的細節包含上文在一個實施例及另一實施例中所描述的全部內容。亦即,光敏樹脂層可包含:鹼性可顯影黏合劑樹脂,其包含由化學式1表示的重複單元;由化學式2表示的重複單元;由化學式3表示的重複單元;以及由化學式4表示的重複單元;及光可聚合化合物。
Details regarding the full length and adhesion of the photosensitive resin layer and the resist residue include all those described above in one embodiment and another. That is, the photosensitive resin layer may include: an alkali developable binder resin including a repeating unit represented by Chemical Formula 1; a repeating unit represented by Chemical Formula 2; a repeating unit represented by
關於包含由化學式1表示的重複單元;由化學式2表示的重複單元;由化學式3表示的重複單元;以及由化學式4表示的重複單元的鹼性可顯影黏合劑樹脂;及光可聚合化合物的細節包含上文在一個實施例中所描述的全部內容。
Details on the alkaline developable binder resin comprising the repeating unit represented by Chemical Formula 1; the repeating unit represented by Chemical Formula 2; the repeating unit represented by
各種塑膠膜可用作保護膜,且其實例可包含至少一種由以下所組成的族群中選出的塑膠膜:丙烯酸膜、聚乙烯(PE)膜、聚對苯二甲酸伸乙酯(PET)膜、三乙醯纖維素(TAC)膜、聚降 冰片烯(PNB)膜、環烯聚合物(COP)膜以及聚碳酸酯(PC)膜。保護膜的厚度不受特別限制,且例如其可在0.01微米至1毫米的範圍內自由地調節。 Various plastic films can be used as the protective film, and examples thereof can include at least one plastic film selected from the group consisting of: acrylic film, polyethylene (PE) film, polyethylene terephthalate (PET) film , triacetyl cellulose (TAC) film, poly Bornene (PNB) film, Cyclic olefin polymer (COP) film and Polycarbonate (PC) film. The thickness of the protective film is not particularly limited, and, for example, it can be freely adjusted within a range of 0.01 μm to 1 mm.
聚合物基板的特定實例可為聚酯膜,其中防黏層是藉由單向地拉伸未經拉伸聚酯膜,將含有黏合劑樹脂及有機粒子的塗佈溶液塗佈至其一個表面上且單向地拉伸剩餘部分的串聯塗佈方法形成。 A specific example of the polymer substrate may be a polyester film, wherein the release layer is a surface of which is coated with a coating solution containing a binder resin and organic particles by uniaxially stretching an unstretched polyester film Formed by a tandem coating method that stretches the remainder uniaxially.
聚合物基板一般由串聯塗佈方法代替添加防黏劑(一般考慮到製造期間的流動性及捲繞特性而添加的)來製造,且具有使用並不損害透明度的替代粒子的有機粒子層。 Polymer substrates are typically fabricated by an inline coating method instead of adding a release agent (generally added to take into account flowability and winding properties during fabrication), and have a layer of organic particles using alternative particles that do not compromise transparency.
此處,在考慮流動性及捲繞特性的同時用作並不損害透明度的粒子的有機粒子的實例可包含有機粒子,諸如多層多組分粒子,其中形成諸如甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸異丁脂、甲基丙烯酸正丁酯、甲基甲基丙烯酸正丁酯、丙烯酸、甲基丙烯酸共聚物或三元共聚物的丙烯酸類粒子;諸如聚乙烯、聚苯乙烯或聚丙烯的烯烴類粒子;丙烯酸及烯烴類共聚物;或均聚物粒子且接著將另一類型的單體塗佈於層上。 Here, examples of organic particles used as particles that do not impair transparency while considering fluidity and winding properties may include organic particles such as multilayered multicomponent particles in which formations such as methyl methacrylate, ethyl methacrylate, etc. are formed. Acrylic particles of ester, isobutyl methacrylate, n-butyl methacrylate, n-butyl methacrylate, acrylic acid, methacrylic acid copolymer or terpolymer; such as polyethylene, polystyrene or Olefinic particles of polypropylene; acrylic and olefinic copolymers; or homopolymer particles and then another type of monomer is coated on the layer.
此等有機粒子應為特定球形的且亦與黏合劑樹脂的折射率具有差異。此處,「球形」意謂橢圓形中的短軸(a)與長軸(b)的比率為0.5<a/b<2,且與矩形中的對角線(d)的關係由d2a2+b2定義。且,六面體中的頂點之間具有最長距離的軸(f)與除a軸及b軸以外的c軸之間的關係由f2c2+a2+b2定義。粒子的形狀應為球形的,其關於流動性為較佳的。 These organic particles should be specifically spherical and also have a difference in refractive index from the binder resin. Here, "spherical" means that the ratio of the short axis (a) to the long axis (b) in the ellipse is 0.5<a/b<2, and the relationship with the diagonal (d) in the rectangle is given by d2 a2+b2 definition. Also, the relationship between the axis (f) having the longest distance between the vertices of the hexahedron and the c-axis other than the a-axis and the b-axis is given by f2 c2+a2+b2 definition. The shape of the particles should be spherical, which is preferable with regard to flowability.
且,特徵在於有機粒子與黏合劑樹脂之間的折射率差值 為0.05或小於0.05。當折射率差值大於0.05時,混濁度增大。此意謂存在大量散射光,且當存在大量此類散射光時,側壁平滑效果降低。此亦取決於有機粒子的大小及量。較佳的為,有機粒子具有約0.5微米至5微米的平均粒度。當其小於此粒度時,流動性及捲繞特性劣化,且當其大於5微米時,混濁度增大,考慮到出現掉落問題,其為不佳的。按黏合劑樹脂的總量計,有機粒子的含量較佳地為1重量%至10重量%。 and is characterized by the difference in refractive index between the organic particles and the binder resin is 0.05 or less. When the difference in refractive index is greater than 0.05, the haze increases. This means that there is a large amount of scattered light, and when there is a large amount of such scattered light, the sidewall smoothing effect is reduced. This also depends on the size and amount of organic particles. Preferably, the organic particles have an average particle size of about 0.5 microns to 5 microns. When it is smaller than this particle size, fluidity and winding characteristics are deteriorated, and when it is larger than 5 micrometers, haze increases, which is unfavorable in view of the occurrence of drop problems. The content of the organic particles is preferably 1 wt % to 10 wt % based on the total amount of the binder resin.
當按黏合劑樹脂的總量計,有機粒子的含量小於1重量%時,防黏效果不足且易受刮擦影響,且流動性及捲繞特性劣化,且當其超出10重量%時,可能存在混濁度增大且透明度特性裂化的問題。 When the content of the organic particles is less than 1% by weight based on the total amount of the binder resin, the anti-blocking effect is insufficient and easily affected by scratches, and the fluidity and winding properties are deteriorated, and when it exceeds 10% by weight, there may be There are problems of increased haze and cracked transparency properties.
同時,除上述有機粒子以外,亦可添加無機粒子。此時,不傾向於增加常用無機防黏劑,且較佳增加粒度為100奈米或小於100奈米的膠態矽石。按100重量份的黏合劑樹脂計,其含量較佳地為10重量份或小於10重量份。當滿足如上文所描述的粒度及含量時,有可能防止在使用乾膜式光阻形成圖案時出現側壁缺陷或凹槽,諸如由防黏層所引起的凹坑。 Meanwhile, in addition to the above-mentioned organic particles, inorganic particles may also be added. At this time, it is not inclined to increase the common inorganic anti-blocking agent, and it is preferable to increase the colloidal silica with a particle size of 100 nm or less. Based on 100 parts by weight of the binder resin, its content is preferably 10 parts by weight or less. When the particle sizes and contents as described above are satisfied, it is possible to prevent sidewall defects or grooves, such as pits caused by the release layer, from occurring when patterning using a dry film type photoresist.
作為充當用於將此類有機粒子塗佈至未經拉伸聚酯膜上的黏著劑的黏合劑樹脂,可使用與有機粒子具有優異相容性的黏合劑樹脂。此類樹脂的實例可包含丙烯酸類樹脂,諸如不飽和聚酯、甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸異丁脂、甲基丙烯酸正丁酯、甲基甲基丙烯酸正丁酯、丙烯酸、甲基丙烯酸共聚物或三元共聚物;胺基甲酸酯類樹脂;環氧基類樹脂;或三聚氰胺類樹脂以及類似物,且丙烯酸類樹脂為較佳的。 As the binder resin serving as a binder for coating such organic particles on an unstretched polyester film, a binder resin having excellent compatibility with organic particles can be used. Examples of such resins may include acrylic resins such as unsaturated polyester, methyl methacrylate, ethyl methacrylate, isobutyl methacrylate, n-butyl methacrylate, n-butyl methacrylate Ester, acrylic, methacrylic copolymers or terpolymers; urethane-based resins; epoxy-based resins; or melamine-based resins and the like, and acrylic resins are preferred.
可用於使用黏合劑樹脂及有機粒子製備塗佈溶液中的溶劑較佳為水。 The solvent that can be used in the preparation of the coating solution using the binder resin and organic particles is preferably water.
如上文所描述,藉由熔融擠出PET丸粒獲得的未經拉伸聚酯膜經單向地拉伸,且接著將黏合劑樹脂中含有有機粒子的塗佈溶液塗佈於經單向拉伸的膜上。塗佈可在經單向拉伸的膜的至少一側上執行,且按最終乾燥之後的厚度計,其厚度較佳為約30奈米至200奈米。若將含有有機粒子的塗佈溶液塗佈至厚度大於30奈米的經單向拉伸的膜上,則存在有機粒子容易脫落且其易受刮擦影響以及產生白色粉末的問題。當塗佈厚度大於200奈米時,由於塗佈溶液的黏度增加,在具有高塗佈速度的串聯塗佈中在塗佈方向上產生塗佈條紋。 As described above, an unstretched polyester film obtained by melt-extruding PET pellets was uniaxially stretched, and then a coating solution containing organic particles in a binder resin was applied to the uniaxially stretched on the stretched membrane. The coating may be performed on at least one side of the uniaxially stretched film, and preferably has a thickness of about 30 nm to 200 nm in terms of thickness after final drying. If a coating solution containing organic particles is applied to a uniaxially stretched film with a thickness of more than 30 nm, there are problems that the organic particles are easily detached and are easily affected by scratches and white powder is generated. When the coating thickness is greater than 200 nm, coating streaks are generated in the coating direction in the tandem coating with high coating speed due to the increased viscosity of the coating solution.
藉由如上文所描述的串聯塗佈方法藉由使用除一般防黏劑以外的有機粒子塗佈獲得的聚合物基板為由於粒子層而維持流動性及捲繞特性的基板膜,且由於具有優異光透射率的有機粒子而具有優異的透明度。 The polymer substrate obtained by coating with organic particles other than the general release agent by the tandem coating method as described above is a substrate film that maintains fluidity and winding characteristics due to the particle layer, and has excellent The light transmittance of organic particles has excellent transparency.
由於在聚合物基板中含有有機粒子的層的相對表面上執行光敏樹脂層的層壓,因此且光敏樹脂層以此方式形成於含有有機粒子的層的相對表面上。因此,不存在出現在包含防黏劑的基板膜如前所述層壓時出現的凹坑樣缺陷。由於諸如矽石的粒子不僅在大小上大於有機粒子,且亦貫穿基板膜分佈,因此即使在鄰接於光敏樹脂層的區域中,矽石的效果似乎仍不顯著。 Since the lamination of the photosensitive resin layer is performed on the opposite surface of the organic particle-containing layer in the polymer substrate, and the photosensitive resin layer is formed on the opposite surface of the organic particle-containing layer in this way. Therefore, there is no pit-like defect that occurs when the substrate film containing the release agent is laminated as described above. Since particles such as silica are not only larger in size than organic particles, but are also distributed throughout the substrate film, the effect of silica does not seem to be significant even in regions adjacent to the photosensitive resin layer.
另一方面,在用於本揭露內容的聚合物基板中,有機粒子具有0.5微米至5微米的大小,且有機粒子層不鄰接於光敏樹脂層,使得並不出現有機粒子的物理作用。此外,藉由使用具有優異 透光率的有機粒子,可減少側壁缺陷且不損害其他電路特性。 On the other hand, in the polymer substrate used in the present disclosure, the organic particles have a size of 0.5 micrometers to 5 micrometers, and the organic particle layer is not adjacent to the photosensitive resin layer, so that the physical effect of the organic particles does not occur. In addition, by using the excellent Transmittance organic particles that reduce sidewall defects without compromising other circuit properties.
光敏元件可更包含形成於光敏樹脂層上的保護膜。保護膜防止在處理期間對光敏樹脂層的損壞,且用作保護光敏樹脂層免受諸如灰塵的外來物質的保護蓋。將保護膜層壓於其上未形成聚合物基板的光敏樹脂層的背側上。保護膜用於保護光敏樹脂層免受外部影響。當乾膜式光阻施加至後段製程時,其需要容易脫離且其需要適當的分離性及黏著性使得其在儲存及分佈期間不會變形。 The photosensitive element may further include a protective film formed on the photosensitive resin layer. The protective film prevents damage to the photosensitive resin layer during handling, and serves as a protective cover to protect the photosensitive resin layer from foreign substances such as dust. A protective film is laminated on the back side of the photosensitive resin layer on which the polymer substrate is not formed. The protective film is used to protect the photosensitive resin layer from external influences. When the dry film photoresist is applied to the back end process, it needs to be easily released and it needs to have proper separation and adhesion so that it does not deform during storage and distribution.
各種塑膠膜可用作保護膜,且其實例可包含至少一種由以下所組成的族群中選出的塑膠膜:丙烯酸膜、聚乙烯(PE)膜、聚對苯二甲酸伸乙酯(PET)膜、三乙醯纖維素(TAC)膜、聚降冰片烯(PNB)膜、環烯聚合物(COP)膜以及聚碳酸酯(PC)膜。保護膜的厚度不受特別限制,且例如其可在0.01微米至1毫米的範圍內自由地調節。 Various plastic films can be used as the protective film, and examples thereof can include at least one plastic film selected from the group consisting of: acrylic film, polyethylene (PE) film, polyethylene terephthalate (PET) film , triacetyl cellulose (TAC) film, polynorbornene (PNB) film, cycloolefin polymer (COP) film and polycarbonate (PC) film. The thickness of the protective film is not particularly limited, and, for example, it can be freely adjusted within a range of 0.01 μm to 1 mm.
4.電路板、顯示裝置4. Circuit board, display device
根據本揭露內容的另一實施例,可提供電路板或顯示裝置,包含含有一個實施例的光敏樹脂組成物的光敏樹脂層。關於光敏樹脂組成物的細節包含上文在一個實施例中所描述的全部內容。 According to another embodiment of the present disclosure, a circuit board or a display device can be provided, including a photosensitive resin layer including the photosensitive resin composition of one embodiment. Details about the photosensitive resin composition include all the content described above in one embodiment.
電路板或顯示裝置的特定細節不受特別限制,且在不受限制的情況下可應用各種習知已知的技術組態。 The specific details of the circuit board or display device are not particularly limited, and various conventionally known technical configurations may be applied without limitation.
電路板或顯示裝置中包含的光敏樹脂層可呈無開口的膜形式或呈具有開口的圖案形式。 The photosensitive resin layer included in the circuit board or the display device may be in the form of a film without openings or in the form of a pattern with openings.
形成圖案化光敏樹脂層的方法的實例包含將另一實施例 的乾膜式光阻的光敏樹脂層層壓於電路板或顯示裝置製造基板上且接著執行曝光及顯影的方法。另外,可提及將根據另一實施例的光敏元件的光敏樹脂層層壓於電路板或顯示裝置製造基板且接著執行曝光及顯影的方法。 An example of a method of forming a patterned photosensitive resin layer includes combining another embodiment A method of laminating a photosensitive resin layer of a dry film photoresist on a circuit board or a display device manufacturing substrate and then performing exposure and development. In addition, a method of laminating a photosensitive resin layer of a photosensitive element according to another embodiment to a circuit board or a display device manufacturing substrate and then performing exposure and development can be mentioned.
光敏樹脂層可呈無開口的膜形式,或可具有帶開口的圖案形狀。 The photosensitive resin layer may be in the form of a film without openings, or may have a pattern shape with openings.
形成圖案化光敏樹脂層的方法的實例可包含將稍後描述的另一實施例的乾膜式光阻的光敏樹脂層層壓於基板上且接著執行曝光及顯影的方法。另外,可提及將稍後描述的另一實施例的光敏元件的光敏樹脂層層壓於基板上且接著執行曝光及顯影的方法。 An example of the method of forming the patterned photosensitive resin layer may include a method of laminating a photosensitive resin layer of a dry film type photoresist of another embodiment described later on a substrate and then performing exposure and development. In addition, a method of laminating a photosensitive resin layer of a photosensitive element of another embodiment described later on a substrate and then performing exposure and development can be mentioned.
當另一實施例的乾膜式光阻或光敏元件在光敏樹脂層上具有保護膜時,可在將光敏樹脂層層壓於電路板或顯示裝置製造基板上的製程之前執行移除保護膜的製程。 When the dry film type photoresist or photosensitive element of another embodiment has a protective film on the photosensitive resin layer, the process of removing the protective film may be performed before the process of laminating the photosensitive resin layer on the circuit board or the display device manufacturing substrate Process.
此外,當另一實施例的乾膜式光阻或光敏元件具有層壓於光敏樹脂層的一側上的聚合物基板或基板膜時,可進一步執行在曝光製程之後立即移除聚合物基板或基板膜的製程。 In addition, when the dry film type photoresist or photosensitive element of another embodiment has a polymer substrate or a substrate film laminated on one side of the photosensitive resin layer, it may be further performed to remove the polymer substrate immediately after the exposure process or Process of substrate film.
因此,另一實施例的乾膜式光阻或光敏元件中所含有的光敏樹脂層可包含於電路板或顯示裝置中。 Therefore, the photosensitive resin layer contained in the dry film photoresist or the photosensitive element of another embodiment can be included in a circuit board or a display device.
根據本揭露內容,可提供在圖案電鍍期間可減少凹穴且實現高解析度圖案的光敏樹脂組成物以及使用其的乾膜式光阻、電路板與顯示裝置。 According to the present disclosure, a photosensitive resin composition capable of reducing cavities during pattern plating and realizing high-resolution patterns, and a dry film photoresist, a circuit board, and a display device using the same can be provided.
此外,根據本揭露內容,可提供可實現提高的耐電鍍性的 光敏樹脂組成物以及使用其的乾膜式光阻、電路板與顯示裝置。 Furthermore, according to the present disclosure, it is possible to provide a Photosensitive resin composition and dry film photoresist, circuit board and display device using the same.
L:線的上端的線寬 L: Line width at the upper end of the line
S:線之間的空間間隔 S: space between lines
T:光敏樹脂層的厚度 T: Thickness of the photosensitive resin layer
d1:由光敏樹脂層線的一側與底表面及抗蝕劑殘餘物接觸所形成的邊界線上的點 d1: The point on the boundary line formed by the contact of one side of the photosensitive resin layer line with the bottom surface and the resist residue
d2:其中藉由自d1至光敏樹脂層線的一側的垂直線及自d1至底表面線的垂直線形成的平面的抗蝕劑殘餘物的橫截面與底表面與抗蝕劑殘餘物之間的分界線交叉的交叉點 d2: wherein the cross section of the resist residue of the plane formed by the vertical line from d1 to one side of the photosensitive resin layer line and the vertical line from d1 to the bottom surface line and the difference between the bottom surface and the resist residue point of intersection
F:足長度 F: Foot length
圖1繪示實例1中所量測的足長度的光學顯微鏡影像。 FIG. 1 shows an optical microscope image of the foot length measured in Example 1. FIG.
圖2為實例1中所獲得的抗蝕劑圖案的示意性橫截面圖。 FIG. 2 is a schematic cross-sectional view of the resist pattern obtained in Example 1. FIG.
圖3繪示實例5至實例8中所量測的基板與光敏樹脂層之間的黏著力的光學顯微鏡影像。 3 shows optical microscope images of the adhesion between the substrate and the photosensitive resin layer measured in Examples 5 to 8.
圖4繪示比較實例3(20分鐘浸沒條件)中所量測的基板與光敏樹脂層之間的黏著力的光學顯微鏡影像。 4 shows an optical microscope image of the adhesive force between the substrate and the photosensitive resin layer measured in Comparative Example 3 (20-minute immersion condition).
圖5為比較實例3(30分鐘浸沒條件)及比較實例4(20分鐘浸沒條件)中所量測的基板與光敏樹脂層之間的黏著力的光學顯微鏡影像。 5 is an optical microscope image of the adhesion between the substrate and the photosensitive resin layer measured in Comparative Example 3 (30-minute immersion condition) and Comparative Example 4 (20-minute immersion condition).
圖6繪示比較實例4(30分鐘浸沒條件)中所量測的基板與光敏樹脂層之間的黏著力的光學顯微鏡影像。 6 shows an optical microscope image of the adhesive force between the substrate and the photosensitive resin layer measured in Comparative Example 4 (30-minute immersion condition).
將藉助於下文所示的實例更詳細地描述本揭露內容。然而,此等實例僅給出以示出本發明且不意欲將本發明的範疇限制於此。 The present disclosure will be described in more detail with the aid of the examples shown below. However, these examples are only given to illustrate the invention and are not intended to limit the scope of the invention thereto.
製備實例1 Preparation Example 1
四頸圓底燒瓶配備有機械攪拌器及回流裝置,且接著用氮氣吹掃燒瓶的內部。將68公克甲基乙基酮(MEK)及5公克甲 醇(MeOH)添加至用氮氣吹掃的燒瓶中,且接著添加0.9公克偶氮二異丁腈(azobisisobutyronitrile;AIBN)並完全溶解。向其中添加24公克甲基丙烯酸(MAA)、6公克甲基丙烯酸甲酯(MMA)、30公克苯乙烯(SM)以及40公克甲基丙烯酸2-苯氧基乙酯(PHEMA)的單體混合物作為單體,加熱直至80℃,且接著聚合6小時以製備鹼性可顯影黏合劑樹脂(重均分子量:68,900公克/莫耳,固體含量:47.9重量%,酸值:154毫克氫氧化鉀/公克)。 The four-necked round bottom flask was equipped with a mechanical stirrer and a reflux device, and then the interior of the flask was purged with nitrogen. Mix 68 grams of methyl ethyl ketone (MEK) and 5 grams of methyl ethyl ketone (MEK) Alcohol (MeOH) was added to the nitrogen purged flask, and then 0.9 grams of azobisisobutyronitrile (AIBN) was added and dissolved completely. To this was added a monomer mixture of 24 grams of methacrylic acid (MAA), 6 grams of methyl methacrylate (MMA), 30 grams of styrene (SM), and 40 grams of 2-phenoxyethyl methacrylate (PHEMA) As a monomer, heated up to 80°C, and then polymerized for 6 hours to prepare an alkaline developable binder resin (weight average molecular weight: 68,900 g/mol, solid content: 47.9 wt %, acid value: 154 mg potassium hydroxide/ grams).
使上述製備實例中所製備的鹼性可顯影黏合劑樹脂溶解於四氫呋喃中,從而以具有THF中1.0(重量/重量)%的濃度(按固體含量計約0.5(重量/重量)%),且使用孔徑為0.45微米的針筒過濾器過濾,接著以20微升的量注射至GPC中。四氫呋喃(THF)用作GPC的行動相且流動速率為1.0毫升/分鐘。管柱經組態有串聯連接的一個安捷倫Plagal 5微米保護件(7.5×50毫米)及兩個安捷倫Plagal 5微米Mixed D(7.5×300毫米),且在40℃下藉由使用安捷倫1260無限II系統以及RI偵測器作為偵測器執行量測。 The alkaline developable binder resin prepared in the above preparation example was dissolved in tetrahydrofuran so as to have a concentration of 1.0 (w/w) % in THF (about 0.5 (w/w) % by solids content), and Filtration using a 0.45 micron pore size syringe filter followed by injection into GPC in 20 microliter volumes. Tetrahydrofuran (THF) was used as the mobile phase for GPC and the flow rate was 1.0 mL/min. The column was configured with one Agilent Plagal 5 micron guard (7.5 x 50 mm) and two Agilent Plagal 5 micron Mixed D (7.5 x 300 mm) connected in series, and was heated at 40°C by using an Agilent 1260 Infinity II The system and the RI detector perform measurements as detectors.
藉由取樣1公克鹼性可顯影黏合劑樹脂,使其溶解於50毫升混合溶劑(MeOH 20%、丙酮80%)中,添加兩滴1%酚酞指示劑以及用0.1N-KOH滴定來量測酸值。 Measure by sampling 1 g of alkaline developable binder resin, dissolving it in 50 ml of mixed solvent (MeOH 20%, acetone 80%), adding two drops of 1% phenolphthalein indicator and titrating with 0.1N-KOH acid value.
固體含量是按上述製備實例中所製備的鹼性可顯影黏合劑樹脂的重量計,且在150℃下在烘箱中加熱120分鐘,且接著量測剩餘固體的重量百分比比率。 The solids content is based on the weight of the alkaline developable binder resin prepared in the above preparation example and heated in an oven at 150°C for 120 minutes, and then the weight percent ratio of remaining solids is measured.
製備實例2 Preparation Example 2
四頸圓底燒瓶配備有機械攪拌器及回流裝置,且接著用 氮氣吹掃燒瓶的內部。將68公克甲基乙基酮(MEK)及5公克甲醇(MeOH)添加至用氮氣吹掃的燒瓶中,且接著添加0.9公克偶氮二異丁腈(AIBN)並完全溶解。向其中添加24公克甲基丙烯酸(MAA)、26公克甲基丙烯酸甲酯(MMA)、30公克苯乙烯(SM)以及20公克甲基丙烯酸2-苯氧基乙酯(PHEMA)的單體混合物作為單體,加熱至80℃,且接著聚合6小時以製備鹼性可顯影黏合劑樹脂(重均分子量:52,500公克/莫耳,固體含量:48.3重量%,酸值:154毫克氫氧化鉀/公克)。 The four-necked round bottom flask was equipped with a mechanical stirrer and reflux device, and was then used Nitrogen purges the inside of the flask. 68 grams of methyl ethyl ketone (MEK) and 5 grams of methanol (MeOH) were added to a nitrogen purged flask, and then 0.9 grams of azobisisobutyronitrile (AIBN) was added and dissolved completely. To this was added a monomer mixture of 24 grams of methacrylic acid (MAA), 26 grams of methyl methacrylate (MMA), 30 grams of styrene (SM), and 20 grams of 2-phenoxyethyl methacrylate (PHEMA) As a monomer, it was heated to 80°C, and then polymerized for 6 hours to prepare an alkaline developable binder resin (weight average molecular weight: 52,500 g/mol, solid content: 48.3 wt %, acid value: 154 mg potassium hydroxide/ grams).
製備實例3 Preparation Example 3
四頸圓底燒瓶配備有機械攪拌器及回流裝置,且接著用氮氣吹掃燒瓶的內部。將80公克甲基乙基酮(MEK)及7.5公克甲醇(MeOH)添加至用氮氣吹掃的燒瓶中,且接著添加0.45公克偶氮二異丁腈(AIBN)並完全溶解。向其中添加8公克丙烯酸(AA)、15公克甲基丙烯酸(MAA)、15公克丙烯酸丁酯(butyl acrylate;BA)、52公克甲基丙烯酸甲酯(MMA)以及10公克苯乙烯(SM)的單體混合物作為單體,加熱直至80℃,且接著聚合6小時以製備鹼性可顯影黏合劑樹脂。 The four-necked round bottom flask was equipped with a mechanical stirrer and a reflux device, and then the interior of the flask was purged with nitrogen. 80 grams of methyl ethyl ketone (MEK) and 7.5 grams of methanol (MeOH) were added to a nitrogen purged flask, and then 0.45 grams of azobisisobutyronitrile (AIBN) was added and dissolved completely. To this were added 8 g of acrylic acid (AA), 15 g of methacrylic acid (MAA), 15 g of butyl acrylate (BA), 52 g of methyl methacrylate (MMA) and 10 g of styrene (SM). The monomer mixture was used as a monomer, heated up to 80°C, and then polymerized for 6 hours to prepare an alkaline developable binder resin.
量測鹼性可顯影黏合劑樹脂具有71,538公克/莫耳的重均分子量,79℃的玻璃轉移溫度,51.4重量%的固體含量以及156.3毫克氫氧化鉀/公克的酸值。 The alkaline developable binder resin was measured to have a weight average molecular weight of 71,538 g/mol, a glass transition temperature of 79°C, a solids content of 51.4 wt %, and an acid value of 156.3 mg potassium hydroxide/g.
製備實例4 Preparation Example 4
四頸圓底燒瓶配備有機械攪拌器及回流裝置,且接著用氮氣吹掃燒瓶的內部。將110公克甲基乙基酮(MEK)及10公克甲醇(MeOH)添加至用氮氣吹掃的燒瓶中,且接著添加1公克偶 氮二異丁腈(AIBN)並完全溶解。向其中添加30公克甲基丙烯酸(MAA)、100公克甲基丙烯酸甲酯(MMA)以及30公克苯乙烯(SM)的單體混合物作為單體,加熱至80℃,且接著聚合6小時以製備鹼性可顯影黏合劑樹脂(重均分子量:49,852公克/莫耳,玻璃轉移溫度:125℃,固體含量:48.5重量%以及酸值:163.17毫克氫氧化鉀/公克)。 The four-necked round bottom flask was equipped with a mechanical stirrer and a reflux device, and then the interior of the flask was purged with nitrogen. 110 grams of methyl ethyl ketone (MEK) and 10 grams of methanol (MeOH) were added to a nitrogen purged flask, followed by 1 gram of azobisisobutyronitrile (AIBN) and dissolved completely. A monomer mixture of 30 g of methacrylic acid (MAA), 100 g of methyl methacrylate (MMA), and 30 g of styrene (SM) was added thereto as monomers, heated to 80° C., and then polymerized for 6 hours to prepare Alkaline developable binder resin (weight average molecular weight: 49,852 g/mol, glass transition temperature: 125°C, solids content: 48.5 wt% and acid value: 163.17 mg potassium hydroxide/g).
比較製備實例1 Comparative Preparation Example 1
四頸圓底燒瓶配備有機械攪拌器及回流裝置,且接著用氮氣吹掃燒瓶的內部。將90公克甲基乙基酮(MEK)及10公克丙二醇單甲醚乙酸酯(propylene glycol monomethyl ether acetate;PGMEA)添加至用氮氣吹掃的燒瓶中,且接著添加0.8公克偶氮二異丁腈(AIBN)並完全溶解。向其中添加20公克甲基丙烯酸(MAA)、70公克甲基丙烯酸甲酯以及10公克苯乙烯的單體混合物作為單體,加熱直至80℃,且接著聚合6小時以製備鹼性可顯影黏合劑樹脂(重均分子量:60,000公克/莫耳)。 The four-necked round bottom flask was equipped with a mechanical stirrer and a reflux device, and then the interior of the flask was purged with nitrogen. 90 grams of methyl ethyl ketone (MEK) and 10 grams of propylene glycol monomethyl ether acetate (PGMEA) were added to a nitrogen purged flask, followed by 0.8 grams of azodiisobutylene Nitrile (AIBN) and completely dissolved. A monomer mixture of 20 grams of methacrylic acid (MAA), 70 grams of methyl methacrylate, and 10 grams of styrene was added thereto as monomers, heated up to 80° C., and then polymerized for 6 hours to prepare an alkaline developable adhesive Resin (weight average molecular weight: 60,000 g/mol).
比較製備實例2 Comparative Preparation Example 2
四頸反應瓶夾套組配備有機械攪拌器及回流裝置,且接著用氮氣吹掃燒瓶的內部。將90公克甲基乙基酮(MEK)及10公克甲醇添加至用氮氣吹掃的燒瓶中,且接著添加0.8公克偶氮二異丁腈(AIBN)並完全溶解。向其中添加24公克甲基丙烯酸、46公克甲基丙烯酸甲酯以及30公克苯乙烯的單體混合物作為單體,加熱直至80℃,且接著聚合6小時以製備鹼性可顯影黏合劑樹脂(重均分子量:49,000公克/莫耳,固體含量:50.0重量%以及酸值:155毫克氫氧化鉀/公克)。 The four-necked reaction flask jacketed set was equipped with a mechanical stirrer and a reflux device, and then the inside of the flask was purged with nitrogen. 90 grams of methyl ethyl ketone (MEK) and 10 grams of methanol were added to a nitrogen purged flask, and then 0.8 grams of azobisisobutyronitrile (AIBN) was added and dissolved completely. Thereto was added a monomer mixture of 24 g of methacrylic acid, 46 g of methyl methacrylate and 30 g of styrene as monomers, heated up to 80°C, and then polymerized for 6 hours to prepare an alkaline developable binder resin (heavy weight). Average molecular weight: 49,000 g/mol, solids content: 50.0% by weight and acid value: 155 mg potassium hydroxide/g).
根據下表1及表2中所示的組成物,將光聚合起始劑溶解於作為溶劑的甲基乙基酮(MEK)中,且接著添加光可聚合化合物及鹼性可顯影黏合劑樹脂,且使用機械攪拌器混合約1小時以製備光敏樹脂組成物。 According to the compositions shown in Tables 1 and 2 below, the photopolymerization initiator was dissolved in methyl ethyl ketone (MEK) as a solvent, and then a photopolymerizable compound and an alkali developable binder resin were added , and mixed using a mechanical stirrer for about 1 hour to prepare a photosensitive resin composition.
使用塗佈棒將獲得的光敏樹脂組成物塗佈至20微米PET膜上。使用熱空氣烘箱乾燥塗佈的光敏樹脂組成物層。此時,乾燥溫度為80℃,乾燥時間為5分鐘以及乾燥之後的光敏樹脂組成物層的厚度為25微米。 The obtained photosensitive resin composition was coated on a 20-micrometer PET film using a coating bar. The coated photosensitive resin composition layer was dried using a hot air oven. At this time, the drying temperature was 80° C., the drying time was 5 minutes, and the thickness of the photosensitive resin composition layer after drying was 25 μm.
將保護膜(聚乙烯)層壓於乾燥的光敏樹脂組成物層上以製備乾膜式光阻。 A protective film (polyethylene) was laminated on the dried photosensitive resin composition layer to prepare a dry film type photoresist.
經由以下製程產生PET膜。 The PET film was produced through the following process.
PET是利用乙二醇及對苯二甲酸藉由執行轉酯化反應及聚縮合反應來製備。將PET丸粒在120℃下減壓乾燥8小時,接著饋入至擠出機中且在280℃下熔融。使用靜電塗佈澆鑄方法將此捲繞於表面溫度為20℃的澆鑄滾筒上,且冷卻並固化以形成未經拉伸膜。藉由調節擠出機的排放量,將未經拉伸膜的厚度調節至250微米。接著,未經拉伸膜在縱向方向上拉伸四次,使用凹板最終乾燥藉由在95.9公克水中混合呈有機粒子形式的4公克丙烯酸類樹脂及0.1公克聚甲基丙烯酸甲酯獲得的塗佈溶液,且接著塗佈於其一側上從而以具有50奈米的厚度。此處使用的聚甲基丙烯酸甲酯為在其表面上塗佈有聚苯乙烯的聚甲基丙烯酸甲酯,其為球形且與丙烯酸類樹脂的折射率差值為0.03。 PET is prepared by performing transesterification and polycondensation using ethylene glycol and terephthalic acid. The PET pellets were dried under reduced pressure at 120°C for 8 hours, then fed into an extruder and melted at 280°C. This was wound on a casting drum with a surface temperature of 20°C using an electrostatic coating casting method, and cooled and solidified to form an unstretched film. The thickness of the unstretched film was adjusted to 250 microns by adjusting the discharge of the extruder. Next, the unstretched film was stretched four times in the longitudinal direction, and finally dried using a concave plate. cloth solution, and then coated on one side thereof to have a thickness of 50 nm. The polymethyl methacrylate used here is polymethyl methacrylate coated with polystyrene on its surface, which is spherical and has a refractive index difference of 0.03 with the acrylic resin.
在120℃下預加熱塗佈有含有有機粒子的塗佈溶液的縱 向單向拉伸的膜,且在橫向方向上拉伸四次。 The longitudinal direction of the coating solution containing the organic particles was preheated at 120°C. The film was uniaxially stretched and stretched four times in the transverse direction.
膜在預定長度下在230℃的最大溫度下熱定型10秒,且冷卻至室溫以獲得總厚度為20微米且塗層厚度為50奈米的聚酯膜。 The film was heat set at a maximum temperature of 230°C for 10 seconds at a predetermined length and cooled to room temperature to obtain a polyester film with a total thickness of 20 microns and a coating thickness of 50 nm.
對於實例及比較實例中所製備的乾膜式光阻,藉由以下方法量測物理特性且結果展示於下表3至表5中。 For the dry film photoresists prepared in the Examples and Comparative Examples, physical properties were measured by the following methods and the results are shown in Tables 3 to 5 below.
1.足長度(單位:微米)1. Foot length (unit: micron)
自實例1至實例4以及比較實例1及比較實例2中所製備的乾膜式光阻剝離保護膜,且使用伯東(HAKUTO)MACH 610i層壓乾膜式光阻的光敏樹脂層從而以接觸1.6毫米厚度的厚包銅層板的銅層表面,在以下條件下進行刷磨:基板預加熱輥溫度為120℃,層壓機輥溫度為115℃,輥壓力為4.0公斤力/平方公分以及滾轉率為2.0分鐘/公尺,由此形成層板。 Dry film photoresist peeling protective films prepared from Examples 1 to 4 and Comparative Example 1 and Comparative Example 2, and the photosensitive resin layer of the dry film photoresist was laminated using HAKUTO MACH 610i so as to contact 1.6 The surface of the copper layer of the thick copper-clad laminate with a thickness of millimeters is brushed under the following conditions: the temperature of the substrate preheating roller is 120°C, the temperature of the laminator roller is 115°C, the roller pressure is 4.0 kgf/cm2 and the roller The rotation rate was 2.0 min/m, thereby forming a laminate.
自層板剝離用於乾膜式光阻的支撐PET膜,且接著使用平行曝光機器(EXM-1201,由ORC製造有限公司(ORC Manufacturing Co.,Ltd.)製造)經由光罩用紫外線照射以進行電路評估(開口的寬度為10微米,開口之間的間隔為10微米)直至達至40毫焦/平方公分的曝光劑量,且接著使其靜置15分鐘。此後,在30±1℃下,用1.0重量% Na2CO3水溶液,在1.5公斤力/平方公分的噴射壓力的噴射型顯影條件下執行顯影的時間為最小顯影時間的兩倍。由此,產生抗蝕劑圖案,其中光敏樹脂層線的上端的線寬(L)與光敏樹脂層線之間的空間間隔(S)的比率L/S為1:1,且光敏樹脂層線的上端的線寬(L)為10微米,如下圖2中所示。 The supporting PET film for dry film photoresist was peeled off from the laminate, and then irradiated with ultraviolet rays through a photomask using a parallel exposure machine (EXM-1201, manufactured by ORC Manufacturing Co., Ltd.) to Circuit evaluations (10 microns wide openings and 10 microns spacing between openings) were performed until an exposure dose of 40 mJ/cm 2 was reached and then allowed to stand for 15 minutes. Thereafter, development was performed at 30±1° C. with a 1.0 wt % Na 2 CO 3 aqueous solution under the jet-type developing condition of a jet pressure of 1.5 kgf/cm 2 for twice the minimum developing time. Thus, a resist pattern is produced in which the ratio L/S of the line width (L) of the upper end of the photosensitive resin layer line to the space interval (S) between the photosensitive resin layer line is 1:1, and the photosensitive resin layer line is The line width (L) of the upper end is 10 μm, as shown in Figure 2 below.
此後,如下圖2中所示,在包銅層板的表面(其為相互鄰接的光敏樹脂層線之間的空間的底表面)中,對於底表面及光敏樹脂層線一側與其接觸的上方剩餘未顯影的抗蝕劑殘餘物,自由光敏樹脂層線的一側與底表面及抗蝕劑殘餘物接觸所形成的邊界線 上的一個點(d1)至其中藉由自一個點開始的光敏樹脂層線的一側的垂直線及自一個點開始的底表面的垂直線形成的平面的抗蝕劑殘餘物的橫截面與由底表面及抗蝕劑殘餘物的分界線交叉的交叉點(d2)的最短直線距離是使用蔡司AXIOPHOT顯微鏡來量測的且足長度的最大值展示於下表2中。 After that, as shown in FIG. 2 below, in the surface of the copper-clad laminate, which is the bottom surface of the space between the photosensitive resin layer lines adjacent to each other, for the bottom surface and the upper part of the photosensitive resin layer line side in contact with it The remaining undeveloped resist residue, the boundary line formed by the contact of one side of the photosensitive resin layer line with the bottom surface and the resist residue A point on (d1) to a cross-section of the resist residue in a plane formed by a vertical line on one side of the photosensitive resin layer line from one point and a vertical line on the bottom surface from one point and The shortest straight-line distance from the intersection (d2) where the dividing line between the bottom surface and the resist residue intersects was measured using a Zeiss AXIOPHOT microscope and the maximum value of the foot length is shown in Table 2 below.
2.細線黏著力(單位:微米)2. Thin wire adhesion (unit: microns)
自實例1至實例4以及比較實例1及比較實例2中所製備的乾膜式光阻剝離保護膜,且使用伯東MACH 610i層壓乾膜式光阻的光敏樹脂層從而以接觸1.6毫米厚度的厚包銅層板的銅層表面,在以下條件下進行刷磨:基板預加熱輥溫度為120℃,層壓機輥溫度為115℃,輥壓力為4.0公斤力/平方公分以及滾轉率為2.0分鐘/公尺,由此形成層板。 The dry film photoresist peeling protective films were prepared from Examples 1 to 4 and Comparative Example 1 and Comparative Example 2, and the photosensitive resin layer of the dry film photoresist was laminated using Bodong MACH 610i so as to contact a thickness of 1.6 mm. The copper layer surface of the thick copper-clad laminate is brushed under the following conditions: the temperature of the substrate preheating roller is 120°C, the temperature of the laminator roller is 115°C, the roller pressure is 4.0 kgf/cm2 and the rolling rate is 2.0 min/m, thereby forming a laminate.
自層板剝離乾膜式光阻的支撐PET膜,且接著使用平行曝光機器(EXM-1201,由ORC製造有限公司製造)經由光罩用紫外線照射以進行電路評估直至達至40毫焦/平方公分的曝光劑量,且接著使其靜置15分鐘。此後,在30±1℃下,用1.0重量% Na2CO3水溶液,在1.5公斤力/平方公分的噴射壓力的噴射型顯影條件下執行顯影的時間為最小顯影時間的兩倍。 The supporting PET film of the dry film photoresist was peeled off from the laminate, and then irradiated with ultraviolet rays through the reticle using a parallel exposure machine (EXM-1201, manufactured by ORC Manufacturing Co., Ltd.) for circuit evaluation up to 40 mJ/square centimeter exposure dose and then allowed to stand for 15 minutes. Thereafter, development was performed at 30±1° C. with a 1.0 wt % Na 2 CO 3 aqueous solution under the jet-type developing condition of a jet pressure of 1.5 kgf/cm 2 for twice the minimum developing time.
在顯影的層板中,光敏樹脂層的最小線寬是用蔡司AXIOPHOT顯微鏡量測且評估為細線黏著力。可評估為此值愈小,細線黏著力愈佳。 In the developed laminate, the minimum line width of the photosensitive resin layer was measured with a Zeiss AXIOPHOT microscope and evaluated as fine line adhesion. It can be estimated that the smaller the value, the better the adhesion of thin lines.
3.1:1解析度(單位:微米)3.1:1 resolution (unit: microns)
自實例1至實例4以及比較實例1及比較實例2中所製備的乾膜式光阻剝離保護膜,且使用伯東MACH 610i層壓乾膜式 光阻的光敏樹脂層從而以接觸1.6毫米厚度的厚包銅層板的銅層表面,在以下條件下進行刷磨:基板預加熱輥溫度為120℃,層壓機輥溫度為115℃,輥壓力為4.0公斤力/平方公分以及滾轉率為2.0分鐘/公尺,由此形成層板。 Dry film photoresist release protective films prepared from Examples 1 to 4 and Comparative Example 1 and Comparative Example 2, and laminated dry film using Bodong MACH 610i The photosensitive resin layer of the photoresist is thus brushed in contact with the copper layer surface of a thick copper-clad laminate with a thickness of 1.6 mm under the following conditions: the temperature of the substrate preheating roller is 120 °C, the temperature of the laminator roller is 115 °C, and the roller temperature is 115 °C. The pressure was 4.0 kgf/cm 2 and the tumble rate was 2.0 min/m, thereby forming a laminate.
自層板剝離用於乾膜式光阻的支撐PET膜,且接著使用平行曝光機器(EXM-1201,由ORC製造有限公司製造)經由光罩用紫外線照射以進行電路評估,直至達至40毫焦/平方公分的曝光劑量,使得電路線的寬度及電路線之間的空間間隔可變為1:1,且接著使其靜置15分鐘。此後,在30±1℃下,用1.0重量% Na2CO3水溶液,在1.5公斤力/平方公分的噴射壓力的噴射型顯影條件下執行顯影的時間為最小顯影時間的兩倍。 The supporting PET film for dry film type photoresist was peeled off from the laminate, and then irradiated with ultraviolet rays through the photomask using a parallel exposure machine (EXM-1201, manufactured by ORC Manufacturing Co., Ltd.) for circuit evaluation up to 40 millimetres The exposure dose of J/cm2, so that the width of the circuit lines and the space interval between the circuit lines can be changed to 1:1, and then it was allowed to stand for 15 minutes. Thereafter, development was performed at 30±1° C. with a 1.0 wt % Na 2 CO 3 aqueous solution under the jet-type developing condition of a jet pressure of 1.5 kgf/cm 2 for twice the minimum developing time.
在顯影的層板中,光敏樹脂層之間的間隔的最小值是用蔡司AXIOPHOT顯微鏡量測且評估為1:1解析度。可評估為此值愈小,1:1解析度值愈佳。 In the developed laminate, the minimum value of the spacing between the photosensitive resin layers was measured with a ZEISS AXIOPHOT microscope and evaluated as 1:1 resolution. It can be estimated that the smaller the value, the better the 1:1 resolution value.
4.最小顯影時間(單位:秒)4. Minimum development time (unit: seconds)
自實例1至實例4以及比較實例1及比較實例2中所製備的乾膜式光阻剝離保護膜,且使用伯東MACH 610i層壓乾膜式光阻的光敏樹脂層從而以接觸1.6毫米厚度的包銅層板的銅層表面,在以下條件下進行刷磨:基板預加熱輥溫度為120℃,層壓機輥溫度為115℃,輥壓力為4.0公斤力/平方公分以及滾轉率為2.0分鐘/公尺,由此形成層板。 The dry film photoresist peeling protective films were prepared from Examples 1 to 4 and Comparative Example 1 and Comparative Example 2, and the photosensitive resin layer of the dry film photoresist was laminated using Bodong MACH 610i so as to contact a thickness of 1.6 mm. The surface of the copper layer of the copper-clad laminate is brushed under the following conditions: the temperature of the substrate preheating roller is 120°C, the temperature of the laminator roller is 115°C, the roller pressure is 4.0 kgf/cm 2 and the rolling rate is 2.0 min/m, thereby forming a laminate.
隨後,在30±1℃下,用1.0重量% Na2CO3水溶液,在1.5公斤力/平方公分的噴射壓力的噴射型顯影條件下執行顯影的時間為最小顯影時間的兩倍。 Subsequently, development was performed at 30±1° C. with a 1.0 wt % Na 2 CO 3 aqueous solution under the jet-type development conditions of a jet pressure of 1.5 kgf/cm 2 for twice the minimum development time.
使用碼表來量測在顯影劑溶液中完全洗滌包銅層板上的光敏樹脂層所需的時間(最小顯影時間)。 A stopwatch was used to measure the time (minimum development time) required to completely wash the photosensitive resin layer on the copper-clad laminate in the developer solution.
如上表3中所示,可證實相較於比較實例,由於足長度非常短,同時維持類似層級的顯影時間、細導線黏著力以及解析度,因此實例的顯影特性優異。 As shown in Table 3 above, it was confirmed that the development characteristics of the Examples were excellent compared to the Comparative Examples since the foot length was very short while maintaining similar levels of development time, fine wire adhesion, and resolution.
5.耐電鍍性5. Electroplating resistance
自實例5至實例8以及比較實例3及比較實例4中所製備的乾膜式光阻剝離保護膜,且使用伯東MACH 610i層壓乾膜式光阻的光敏樹脂層從而以接觸1.6毫米厚度的包銅層板的銅層表面,在以下條件下進行刷磨:基板預加熱輥溫度為120℃,層壓機輥溫度為115℃,輥壓力為4.0公斤力/平方公分以及滾轉率為2.0分鐘/公尺,由此形成層板。 The dry film photoresist peel-off protective films were prepared from Examples 5 to 8 and Comparative Examples 3 and 4, and the photosensitive resin layer of the dry film photoresist was laminated using Bodong MACH 610i so as to contact a thickness of 1.6 mm. The surface of the copper layer of the copper-clad laminate is brushed under the following conditions: the temperature of the substrate preheating roller is 120°C, the temperature of the laminator roller is 115°C, the roller pressure is 4.0 kgf/cm 2 and the rolling rate is 2.0 min/m, thereby forming a laminate.
自層板剝離用於乾膜式光阻的支撐PET膜,且接著使用平行曝光機器(EXM-1201,由ORC製造有限公司製造)以80毫焦/平方公分的曝光劑量用紫外線照射前表面,持續4秒,且接著使其靜置15分鐘。此後,在30±1℃下,用1.0重量% Na2CO3水溶液,在1.5公斤力/平方公分的噴射壓力的噴射型顯影條件下執行顯影一分鐘。 The supporting PET film for dry film resist was peeled off from the laminate, and then the front surface was irradiated with ultraviolet rays at an exposure dose of 80 mJ/cm 2 using a parallel exposure machine (EXM-1201, manufactured by ORC Manufacturing Co., Ltd.), This was continued for 4 seconds and then allowed to stand for 15 minutes. Thereafter, development was performed for one minute at 30±1° C. with a 1.0 wt % Na 2 CO 3 aqueous solution under the jet-type developing conditions of a jet pressure of 1.5 kgf/cm 2 .
將顯影的層板切割成寬度為5公分且長度為5公分的大小以製備樣本,將所述樣本裝載於由具有相同大小的PFA材料製成的晶圓載體上且接著浸沒於1公升鎳水溶液中來執行鍍鎳。 The developed laminate was cut to a size of 5 cm in width and 5 cm in length to prepare samples, which were loaded on wafer carriers made of PFA material of the same size and then immersed in 1 liter of aqueous nickel solution to perform nickel plating.
更具體言之,如下執行鍍鎳。根據MK化學及科技公司(MK Chem & Tech)的乾浴條件在25℃下將固化膜浸沒於鹽酸類鈀催化劑ICP ACCERA H水溶液(90立方公分35%鹽酸及40立方公分ICP ACCERA H裝入於870立方公分蒸餾水中的混合物)中保持1分鐘,且接著在80℃下將固化膜浸沒於無電Ni-P藥物ICP NICORON GIB水溶液(100立方公分ICP NICORON GIB-M及50立方公分ICP NICORON GIB-1裝入於850立方公分蒸餾水中的混合物)中分別保持10分鐘、20分鐘以及30分鐘,如同下表2中所示的浸沒時間。(作為鍍鎳溶液,自MK化學及科技公司購得ICP ACCERA H、ICP NICORON GIB-M以及ICP NICORON GIB-1。) More specifically, nickel plating is performed as follows. The cured film was immersed in an aqueous solution of hydrochloric acid-based palladium catalyst ICP ACCERA H (90 cubic centimeters of 35% hydrochloric acid and 40 cubic centimeters of ICP ACCERA H) at 25°C according to the dry bath conditions of MK Chem & Tech. 870 cm3 of distilled water) for 1 min, and then the cured film was immersed in an aqueous solution of electroless Ni-P drug ICP NICORON GIB (100 cm3 ICP NICORON GIB-M and 50 cm3 ICP NICORON GIB- 1 in 850 cubic centimeters of distilled water) for 10 minutes, 20 minutes, and 30 minutes, respectively, for the immersion times shown in Table 2 below. (As nickel plating solutions, ICP ACCERA H, ICP NICORON GIB-M, and ICP NICORON GIB-1 were purchased from MK Chemical & Technology.)
當鍍鎳完成時,乾膜式光阻於包銅層板上的黏著力是經由光學顯微鏡影像測定以評估耐電鍍性,且結果展示於下表2中。乾膜式光阻的黏著力意謂鍍鎳之後乾膜式光阻的光敏樹脂層與包銅層板接觸的表面積相對於鍍鎳之前乾膜式光阻的光敏樹脂層與包銅層板接觸的表面積的百分比比率。 When the nickel plating was completed, the adhesion of the dry film photoresist to the copper clad laminate was measured by optical microscope images to evaluate the plating resistance, and the results are shown in Table 2 below. The adhesion of the dry film photoresist means that the surface area of the photosensitive resin layer of the dry film photoresist in contact with the copper clad laminate after nickel plating is relative to the contact between the photosensitive resin layer of the dry film photoresist and the copper clad laminate before nickel plating percentage of surface area.
[等式4]黏著力(%)=(鍍鎳之後乾膜式光阻的光敏樹脂層與包銅層板接觸的表面積/鍍鎳之前乾膜式光阻的光敏樹脂層與包銅層板接觸的表面積)×100 [Equation 4] Adhesion (%) = (the surface area of the photosensitive resin layer of the dry film photoresist in contact with the copper clad laminate after nickel plating / the photosensitive resin layer of the dry film photoresist and the copper clad laminate before nickel plating Contact surface area)×100
[表4]
如表4中所繪示,可證實實例藉助於ENIG電鍍在鍍鎳期間維持對基板的黏著力且相較於比較實例具有優異的耐電鍍性。 As depicted in Table 4, it can be demonstrated that the examples maintain adhesion to the substrate during nickel plating by means of ENIG electroplating and have superior plating resistance compared to the comparative examples.
6.細線黏著力(單位:微米)6. Thin wire adhesion (unit: microns)
自實例5至實例8以及比較實例3及比較實例4中所製備的乾膜式光阻剝離保護膜,且使用伯東MACH 610i層壓乾膜式光阻的光敏樹脂層從而以接觸1.6毫米厚度的厚包銅層板的銅層表面,在以下條件下進行刷磨:基板預加熱輥溫度為120℃,層壓機輥溫度為115℃,輥壓力為4.0公斤力/平方公分以及滾轉率為2.0分鐘/公尺,由此形成層板。 The dry film photoresist peel-off protective films were prepared from Examples 5 to 8 and Comparative Examples 3 and 4, and the photosensitive resin layer of the dry film photoresist was laminated using Bodong MACH 610i so as to contact a thickness of 1.6 mm. The copper layer surface of the thick copper-clad laminate is brushed under the following conditions: the temperature of the substrate preheating roller is 120°C, the temperature of the laminator roller is 115°C, the roller pressure is 4.0 kgf/cm2 and the rolling rate is 2.0 min/m, thereby forming a laminate.
自層板剝離用於乾膜式光阻的支撐PET膜,且接著使用平行曝光機器(EXM-1201,由ORC製造公司製造)以40毫焦/平方公分的曝光劑量經由光罩用紫外線照射4秒以進行電路評估,且接著使其靜置15分鐘。此後,在30±1℃下,用1.0重量% Na2CO3水溶液,在1.5公斤力/平方公分的噴射壓力的噴射型顯影條件下 執行顯影的時間為最小顯影時間的兩倍。 The supporting PET film for dry film photoresist was peeled off from the laminate, and then irradiated with ultraviolet rays through a photomask at an exposure dose of 40 mJ/cm 2 using a parallel exposure machine (EXM-1201, manufactured by ORC Manufacturing Co., Ltd.) seconds for circuit evaluation, and then allowed to stand for 15 minutes. Thereafter, development was performed at 30±1° C. with a 1.0 wt % Na 2 CO 3 aqueous solution under the jet-type developing condition of a jet pressure of 1.5 kgf/cm 2 for twice the minimum developing time.
在顯影的層板中,光敏樹脂層的最小線寬是用蔡司AXIOPHOT顯微鏡量測且評估為細線黏著力。可評估為此值愈小,細線黏著力愈佳。 In the developed laminate, the minimum line width of the photosensitive resin layer was measured with a Zeiss AXIOPHOT microscope and evaluated as fine line adhesion. It can be estimated that the smaller the value, the better the adhesion of thin lines.
7.1:1解析度(單位:微米)7.1:1 resolution (unit: microns)
自實例5至實例8以及比較實例3及比較實例4中所製備的乾膜式光阻的保護膜中剝離保護膜,且使用伯東MACH 610i層壓乾膜式光阻的光敏樹脂層從而以接觸1.6毫米厚度的厚包銅層板的銅層表面,在以下條件下進行刷磨:基板預加熱輥溫度為120℃,層壓機輥溫度為115℃,輥壓力為4.0公斤力/平方公分以及滾轉率為2.0分鐘/公尺,由此形成層板。 The protective film was peeled off from the protective films of the dry film photoresists prepared in Examples 5 to 8 and Comparative Examples 3 and 4, and the photosensitive resin layer of the dry film photoresist was laminated using Bodong MACH 610i so as to contact The copper layer surface of the thick copper-clad laminate with a thickness of 1.6 mm is brushed under the following conditions: the temperature of the substrate preheating roll is 120 °C, the temperature of the laminator roll is 115 °C, the roll pressure is 4.0 kgf/cm² and The tumble rate was 2.0 min/m, thereby forming a laminate.
自層板剝離用於乾膜式光阻的支撐PET膜,且接著使用平行曝光機器(EXM-1201,由ORC製造有限公司製造)經由光罩用紫外線照射4秒以進行電路評估,直至達至80毫焦/平方公分的曝光劑量,使得電路線的寬度及電路線之間的空間間隔變為1:1,且接著使其靜置15分鐘。此後,在30±1℃下,用1.0重量% Na2CO3水溶液,在1.5公斤力/平方公分的噴射壓力的噴射型顯影條件下執行顯影一分鐘。 The supporting PET film for dry film type photoresist was peeled off from the laminate, and then a parallel exposure machine (EXM-1201, manufactured by ORC Manufacturing Co., Ltd.) was used for circuit evaluation by irradiating ultraviolet rays through a photomask for 4 seconds until reaching An exposure dose of 80 mJ/cm 2 made the width of the circuit lines and the spacing between the circuit lines become 1:1, and then allowed to stand for 15 minutes. Thereafter, development was performed for one minute at 30±1° C. with a 1.0 wt % Na 2 CO 3 aqueous solution under the jet-type developing conditions of a jet pressure of 1.5 kgf/cm 2 .
在顯影的層板中,光敏樹脂層之間的間隔的最小值是用蔡司AXIOPHOT顯微鏡量測且評估為1:1解析度。可評估為此值愈小,1:1解析度值愈佳。 In the developed laminate, the minimum value of the spacing between the photosensitive resin layers was measured with a ZEISS AXIOPHOT microscope and evaluated as 1:1 resolution. It can be estimated that the smaller the value, the better the 1:1 resolution value.
如表5中所示,可證實相較於比較實例,實例具有優異的細線黏著力及解析度。 As shown in Table 5, it can be confirmed that the examples have excellent fine line adhesion and resolution compared to the comparative examples.
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| KR102234811B1 (en) | 2014-05-23 | 2021-03-31 | 쇼와덴코머티리얼즈가부시끼가이샤 | Method for forming resist pattern, method for manufacturing printed wiring board, photosensitive resin composition for projection exposure and photosensitive element |
| JP2017078836A (en) * | 2015-10-22 | 2017-04-27 | Jsr株式会社 | Method for forming resist pattern and method for producing plated model |
-
2020
- 2020-12-28 CN CN202080082461.1A patent/CN114787711B/en active Active
- 2020-12-28 WO PCT/KR2020/019181 patent/WO2021137545A1/en not_active Ceased
- 2020-12-28 JP JP2022538429A patent/JP7376723B2/en active Active
- 2020-12-29 TW TW109146583A patent/TWI767481B/en active
-
2023
- 2023-08-10 JP JP2023131457A patent/JP7607717B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11316456A (en) * | 1998-02-17 | 1999-11-16 | Toppan Printing Co Ltd | Solventless photosensitive baked paste composition, and solvent-based photosensitive baked paste composition and structure |
| JP2017167394A (en) * | 2016-03-17 | 2017-09-21 | 日立化成株式会社 | Photosensitive resin composition, photosensitive element, method for producing substrate with resist pattern, and method for manufacturing printed wiring board |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021137545A1 (en) | 2021-07-08 |
| JP2023509860A (en) | 2023-03-10 |
| JP2023159231A (en) | 2023-10-31 |
| JP7376723B2 (en) | 2023-11-08 |
| TW202132360A (en) | 2021-09-01 |
| CN114787711A (en) | 2022-07-22 |
| JP7607717B2 (en) | 2024-12-27 |
| CN114787711B (en) | 2025-07-01 |
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