TWI762310B - Circuit board structure and manufacturing method thereof - Google Patents
Circuit board structure and manufacturing method thereof Download PDFInfo
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- TWI762310B TWI762310B TW110117243A TW110117243A TWI762310B TW I762310 B TWI762310 B TW I762310B TW 110117243 A TW110117243 A TW 110117243A TW 110117243 A TW110117243 A TW 110117243A TW I762310 B TWI762310 B TW I762310B
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- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 230000000149 penetrating effect Effects 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 293
- 239000000463 material Substances 0.000 claims description 39
- 229910000679 solder Inorganic materials 0.000 claims description 35
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 22
- 239000011889 copper foil Substances 0.000 claims description 22
- 239000003292 glue Substances 0.000 claims description 22
- 239000002335 surface treatment layer Substances 0.000 claims description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 238000007654 immersion Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 239000012792 core layer Substances 0.000 claims description 10
- 239000003989 dielectric material Substances 0.000 claims description 6
- BSIDXUHWUKTRQL-UHFFFAOYSA-N nickel palladium Chemical compound [Ni].[Pd] BSIDXUHWUKTRQL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 238000003825 pressing Methods 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 238000010030 laminating Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
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Abstract
Description
本發明是有關於一種基板結構及其製作方法,且特別是有關於一種電路板結構及其製作方法。The present invention relates to a substrate structure and a manufacturing method thereof, and in particular, to a circuit board structure and a manufacturing method thereof.
一般來說,二個具有線路或導電結構的電路板要相互結合,都是透過銲點(solder joints)來連接,且透過底膠(underfill)來填充於二個基板之間以密封銲點。然而,在銲料高溫迴銲的過程中,較大面積尺寸的電路板因應力無法釋放,而容易發生較大的翹曲,進而降低二電路板之間的組裝良率。Generally speaking, two circuit boards with lines or conductive structures are to be combined with each other, and they are connected through solder joints, and are filled between the two substrates through underfill to seal the solder joints. However, in the process of high-temperature reflow of the solder, the circuit board with a larger area size cannot be relieved of the stress, and a large warpage is likely to occur, thereby reducing the assembly yield between the two circuit boards.
本發明提供一種電路板結構,無需使用銲料及底膠,可降低成本,且具有較佳的結構可靠度。The invention provides a circuit board structure without using solder and primer, which can reduce the cost and has better structural reliability.
本發明還提供一種電路板結構的製作方法,用以製作上述的電路板結構。The present invention also provides a manufacturing method of a circuit board structure, which is used to manufacture the above-mentioned circuit board structure.
本發明的電路板結構,其包括一重配置線路結構層、一增層線路結構層以及一連接結構層。重配置線路結構層包括多個第一連接墊。增層線路結構層配置於重配置線路結構層的一側,且包括多個第二連接墊。重配置線路結構層的線寬與線距小於增層線路結構層的線寬與線距。連接結構層配置於重配置線路結構層與增層線路結構層之間,且包括一基材與貫穿基材的多個導電膠柱。第一連接墊分別透過導電膠柱與第二連接墊電性連接。第一連接墊與第二連接墊分別嵌入基材的相對兩表面。The circuit board structure of the present invention includes a reconfigured circuit structure layer, a build-up circuit structure layer and a connection structure layer. The reconfiguration line structure layer includes a plurality of first connection pads. The build-up circuit structure layer is disposed on one side of the reconfigured circuit structure layer and includes a plurality of second connection pads. The line width and line spacing of the reconfigured circuit structure layer are smaller than those of the build-up circuit structure layer. The connection structure layer is disposed between the reconfigured circuit structure layer and the build-up circuit structure layer, and includes a base material and a plurality of conductive glue columns penetrating the base material. The first connection pads are electrically connected to the second connection pads through the conductive glue columns respectively. The first connection pad and the second connection pad are respectively embedded in two opposite surfaces of the substrate.
在本發明的一實施例中,上述的重配置線路結構層更包括多個介電層、至少一重配置線路、多個導電通孔以及多個晶片接墊。介電層與至少一重配置線路交替配置。第一連接墊、重配置線路以及晶片接墊透過導電通孔電性連接。介電層中位於最外側的是一第一介電層與一第二介電層。晶片接墊內埋於第一介電層內,而第一連接墊位於第二介電層上,且第二介電層直接接觸連接結構層的基材。In an embodiment of the present invention, the above-mentioned reconfiguration circuit structure layer further includes a plurality of dielectric layers, at least one reconfiguration circuit, a plurality of conductive vias, and a plurality of die pads. The dielectric layers are alternately arranged with at least one reconfiguration line. The first connection pads, the reconfiguration lines and the chip pads are electrically connected through the conductive vias. The outermost dielectric layers are a first dielectric layer and a second dielectric layer. The chip pads are buried in the first dielectric layer, the first connection pads are located on the second dielectric layer, and the second dielectric layer directly contacts the base material of the connection structure layer.
在本發明的一實施例中,上述的介電層的材質包括光敏介電材料或味之素堆積薄膜(Ajinomoto Build-up Film, ABF)。In an embodiment of the present invention, the material of the above-mentioned dielectric layer includes a photosensitive dielectric material or an Ajinomoto Build-up Film (ABF).
在本發明的一實施例中,上述的電路板結構還包括一表面處理層,配置於重配置線路結構層的晶片接墊上。表面處理層的材質包括化鎳鈀浸金(ENEPIG)、有機保銲劑(organic solderability preservatives, OSP)或無電鍍鎳浸金(Electroless Nickel Immersion Gold,ENIG)。In an embodiment of the present invention, the above-mentioned circuit board structure further includes a surface treatment layer disposed on the chip pads of the reconfigured circuit structure layer. The material of the surface treatment layer includes nickel palladium immersion gold (ENEPIG), organic solderability preservatives (OSP) or electroless nickel immersion gold (ENIG).
在本發明的一實施例中,上述的電路板結構還包括一防銲層,配置於增層線路結構層相對遠離連接結構層的一表面上,且覆蓋部分增層線路結構層而定義出多個銲球接墊。In an embodiment of the present invention, the above-mentioned circuit board structure further includes a solder mask layer, which is disposed on a surface of the build-up circuit structure layer relatively far from the connection structure layer, and covers part of the build-up circuit structure layer to define a plurality of layers. solder ball pads.
本發明的電路板結構的製作方法,其包括以下步驟。提供包括多個第一連接墊的一重配置線路結構層。提供包括一基材與貫穿基材的多個導電膠柱的一連接結構層,其中連接結構層處於一B階段狀態。提供包括多個第二連接墊的一增層線路結構層,其中重配置線路結構層的線寬與線距小於增層線路結構層的線寬與線距。壓合重配置線路結構層、連接結構層以及增層線路結構層,以使連接結構層位於重配置線路結構層與增層線路結構層之間。第一連接墊分別透過導電膠柱與第二連接墊電性連接,且第一連接墊與第二連接墊分別嵌入基材的相對兩表面,而由基材與導電膠柱構成的連接結構層從B階段狀態轉變成一C階段狀態。The manufacturing method of the circuit board structure of the present invention includes the following steps. A reconfigured line structure layer including a plurality of first connection pads is provided. A connection structure layer including a base material and a plurality of conductive glue columns penetrating the base material is provided, wherein the connection structure layer is in a B-stage state. A build-up line structure layer including a plurality of second connection pads is provided, wherein the line width and line spacing of the reconfigured line structure layer are smaller than those of the build-up line structure layer. The reconfiguration line structure layer, the connection structure layer and the build-up line structure layer are pressed together, so that the connection structure layer is located between the reconfiguration line structure layer and the build-up line structure layer. The first connection pads are electrically connected to the second connection pads respectively through the conductive glue posts, and the first connection pads and the second connection pads are respectively embedded in two opposite surfaces of the base material, and the connection structure layer formed by the base material and the conductive glue posts From a B-stage state to a C-stage state.
在本發明的一實施例中,上述的提供包括第一連接墊的重配置線路結構層的步驟包括以下步驟。提供一暫時基板及位於暫時基板上的一離形膜。形成一絕緣層於離形膜上。提供一核心基板於絕緣層上。核心基板包括一核心層以及位於核心層相對兩側的一第一銅箔層與一第二銅箔層。第二銅箔層位於核心層與絕緣層之間。形成多個晶片接墊於第一銅箔層上。形成一第一介電層於第一銅箔層上。第一介電層覆蓋晶片接墊且具有多個第一開口,而第一開口暴露出部分晶片接墊。形成至少一重配置線路與多個第一導電通孔。重配置線路配置於第一介電層上,而第一導電通孔分別位於第一開口內且電性連接重配置線路與晶片接墊。形成一第二介電層於重配置線路上。第二介電層具有多個第二開口,第二開口暴露出部分重配置線路。形成第一連接墊與多個第二導電通孔。第一連接墊配置於第二介電層上,而第二導電通孔分別位於第二開口內且電性連接重配置線路與第一連接墊。移除暫時基板與離形膜,而暴露出絕緣層。In an embodiment of the present invention, the above-mentioned step of providing the reconfigured circuit structure layer including the first connection pad includes the following steps. A temporary substrate and a release film on the temporary substrate are provided. An insulating layer is formed on the release film. A core substrate is provided on the insulating layer. The core substrate includes a core layer, a first copper foil layer and a second copper foil layer on opposite sides of the core layer. The second copper foil layer is located between the core layer and the insulating layer. A plurality of chip pads are formed on the first copper foil layer. A first dielectric layer is formed on the first copper foil layer. The first dielectric layer covers the die pads and has a plurality of first openings, and the first openings expose part of the die pads. At least one reconfiguration line and a plurality of first conductive vias are formed. The redistribution lines are disposed on the first dielectric layer, and the first conductive vias are respectively located in the first openings and electrically connect the redistribution lines and the chip pads. A second dielectric layer is formed on the reconfiguration line. The second dielectric layer has a plurality of second openings, and the second openings expose part of the reconfiguration lines. A first connection pad and a plurality of second conductive vias are formed. The first connection pads are disposed on the second dielectric layer, and the second conductive vias are respectively located in the second openings and electrically connect the redistribution lines and the first connection pads. The temporary substrate and release film are removed to expose the insulating layer.
在本發明的一實施例中,上述的第一介電層的材質與第二介電層的材質包括光敏介電材料或味之素堆積薄膜。In an embodiment of the present invention, the material of the first dielectric layer and the material of the second dielectric layer include a photosensitive dielectric material or an Ajinomoto deposition film.
在本發明的一實施例中,上述於壓合重配置線路結構層、連接結構層以及增層線路結構層之後,更包括:移除絕緣層與核心基材,而暴露出重配置線路結構層的第一介電層。形成一表面處理層於重配置線路結構層的晶片接墊上。表面處理層的材質包括化鎳鈀浸金、有機保銲劑或無電鍍鎳浸金。In an embodiment of the present invention, after laminating the reconfiguration circuit structure layer, the connection structure layer and the build-up circuit structure layer, the method further includes: removing the insulating layer and the core substrate to expose the reconfiguration circuit structure layer the first dielectric layer. A surface treatment layer is formed on the chip pads of the reconfigured circuit structure layer. The material of the surface treatment layer includes nickel palladium immersion gold, organic solder resist or electroless nickel immersion gold.
在本發明的一實施例中,上述於壓合重配置線路結構層、連接結構層以及增層線路結構層之前,更包括形成一防銲層於增層線路結構層相對遠離連接結構層的一表面上。防銲層覆蓋部分增層線路結構層而定義出多個銲球接墊。In an embodiment of the present invention, before laminating the reconfigured circuit structure layer, the connection structure layer, and the build-up circuit structure layer, it further includes forming a solder mask layer on the build-up circuit structure layer that is relatively far from the connection structure layer. on the surface. The solder mask covers part of the build-up circuit structure layer to define a plurality of solder ball pads.
基於上述,在本發明的電路板結構的製作方法中,是透過壓合重配置線路結構層、連接結構層以及增層線路結構層的方式來形成電路板結構,其中重配置線路結構層的第一連接墊分別透過連接結構層的導電膠柱與增層線路結構層的第二連接墊電性連接,且第一連接墊與第二連接墊分別嵌入連接結構層的基材的相對兩表面。藉此,本發明的電路板結構的製作方法無須使用銲料及底膠,可有效地降低電路板結構的製作成本。此外,因為無使用銲料,因此可有效地提高重配置線路結構層、連接結構層以及增層線路結構層之間的接合良率,進而提升本發明的電路板結構的結構可靠度。Based on the above, in the manufacturing method of the circuit board structure of the present invention, the circuit board structure is formed by pressing the reconfigured circuit structure layer, the connection structure layer and the build-up circuit structure layer, wherein the first layer of the reconfigured circuit structure layer is formed. A connection pad is electrically connected to the second connection pad of the build-up circuit structure layer through the conductive glue column of the connection structure layer respectively, and the first connection pad and the second connection pad are respectively embedded in two opposite surfaces of the base material of the connection structure layer. Therefore, the method for fabricating the circuit board structure of the present invention does not need to use solder and primer, which can effectively reduce the fabrication cost of the circuit board structure. In addition, because no solder is used, the bonding yield between the reconfigured circuit structure layer, the connection structure layer and the build-up circuit structure layer can be effectively improved, thereby improving the structural reliability of the circuit board structure of the present invention.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, the following embodiments are given and described in detail with the accompanying drawings as follows.
圖1A至圖1P是依照本發明的一實施例的一種電路板結構的製作方法的剖面示意圖。圖2是將晶片配置於圖1P的電路板結構的剖面示意圖。關於本實施例的電路板結構的製作方法,首先,請參考圖1A,提供暫時基板10及位於暫時基板10上的離形膜12。此處,暫時基板10的材質例如是玻璃或塑膠,其為沒有線路的基板。1A to 1P are schematic cross-sectional views of a method for fabricating a circuit board structure according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of the circuit board structure of FIG. 1P where a wafer is placed. Regarding the fabrication method of the circuit board structure of the present embodiment, first, referring to FIG. 1A , a
接著,請參考圖1B,形成絕緣層20於離形膜12上,其中絕緣層20的材質例如是味之素堆積薄膜(ABF),但不以此為限。Next, referring to FIG. 1B , an
緊接著,請再參考圖1B,提供核心基板30於絕緣層20上,其中核心基板30包括核心層32以及位於核心層32相對兩側的第一銅箔層34與第二銅箔層36。於一實施例中,可對第一銅箔層34的表面進行化學-機械研磨(Chemical-mechanical polishing)程序以表面平坦化。此處,第二銅箔層36位於核心層32與絕緣層20之間。Next, referring to FIG. 1B again, a
接著,請參考圖1C,形成圖案化光阻層P1於該第一銅箔層34上,其中圖案化光阻層P1暴露出部分第一銅箔層34。Next, referring to FIG. 1C , a patterned photoresist layer P1 is formed on the first
接著,請參考圖1D,形成多個晶片接墊112於第一銅箔層34上,其中晶片接墊112位於圖案化光阻層P1所暴露出的第一銅箔層34上。此處,形成晶片接墊112的方法例如是電鍍。Next, referring to FIG. 1D , a plurality of
接著,請同時參考圖1D與圖1E,移除圖案化光阻層P1,而暴露出第一銅箔層34。Next, referring to FIG. 1D and FIG. 1E at the same time, the patterned photoresist layer P1 is removed to expose the first
接著,請參考圖1F,形成第一介電層114於第一銅箔層34上,其中第一介電層114覆蓋晶片接墊112且具有多個第一開口H1,而第一開口H1暴露出部分晶片接墊112。此處,第一介電層114的材質例如是光敏介電材料或味之素堆積薄膜(ABF)。Next, referring to FIG. 1F, a first
接著,請參考圖1G,形成種子層S於第一介電層114上,其中種子層S覆蓋第一介電層114及第一開口H1的內壁且連接至晶片接墊112。Next, referring to FIG. 1G , a seed layer S is formed on the
接著,請參考圖1H,形成圖案化光阻層P2於種子層S上,其中圖案化光阻層P2暴露出部分種子層S。Next, referring to FIG. 1H , a patterned photoresist layer P2 is formed on the seed layer S, wherein part of the seed layer S is exposed from the patterned photoresist layer P2 .
接著,請參考圖1I,形成金屬層M於圖案化光阻層P2所暴露出的種子層S上,其中形成金屬層M的方法例如是電鍍。Next, referring to FIG. 1I, a metal layer M is formed on the seed layer S exposed by the patterned photoresist layer P2, wherein the method of forming the metal layer M is, for example, electroplating.
接著,請參考圖1J,移除圖案化光阻層P2及位於其下方的種子層S,而形成重配置線路116與第一導電通孔T1。此處,重配置線路116位於第一介電層114上,而第一導電通孔T1分別位於第一開口H1內且電性連接重配置線路116與晶片接墊112。Next, referring to FIG. 1J , the patterned photoresist layer P2 and the seed layer S located under the patterned photoresist layer P2 are removed to form the
接著,可重複圖1F至圖1J的步驟,來形成所需的重配置線路116及第一導電通孔T1的層數,其中重複的次數可依據使用者的需求。Next, the steps of FIG. 1F to FIG. 1J can be repeated to form the required number of layers of the
接著,請參考圖1K,形成一第二介電層118於重配置線路116上,其中第二介電層118具有多個第二開口H2,且第二開口H2暴露出部分重配置線路116。此處,第二介電層118的材質例如是光敏介電材料或味之素堆積薄膜(ABF)。Next, referring to FIG. 1K , a
緊接著,請再參考圖1K,同圖1G至圖1J的步驟,形成第一連接墊119與多個第二導電通孔T2。此處,第一連接墊119配置於第二介電層118上,而第二導電通孔T2分別位於第二開口H2內且電性連接重配置線路116與第一連接墊119。至此,已完成包括第一連接墊119的重配置線路結構層110的製作。此處,重配置線路結構層110具體化為具有細線路的重配置線路結構層。Next, referring to FIG. 1K again, the same steps as in FIGS. 1G to 1J are used to form the
接著,請同時參考圖1K與圖1L,移除暫時基板10與離形膜12,而暴露出絕緣層20。Next, referring to FIG. 1K and FIG. 1L at the same time, the
接著,請參考圖1M,提供包括一基材122與貫穿基材122的多個導電膠柱125的一連接結構層120,其中連接結構層120處於一B階段狀態。此處,基材122的材質例如是預浸料(prepreg, PP),而導電膠柱125的材質例如是導電金屬膠,以印刷法(printing)進行塗佈製作,可具有導電與導熱的效果,且適於與任何金屬材質進行接合。Next, referring to FIG. 1M , a
接著,請再參考圖1M,提供包括多個第二連接墊132的一增層線路結構層130,其中重配置線路結構層110的線寬與線距小於增層線路結構層130的線寬與線距。此時,已形成一防銲層150於增層線路結構層130相對遠離連接結構層120的一表面131上。防銲層150覆蓋部分增層線路結構層130而定義出多個銲球接墊SP。此處,增層線路結構層130具體化為一多層電路板。Next, referring to FIG. 1M again, a build-up
須說明的是,本實施例並沒有限制提供重配置線路結構層110、連接結構層120及增層線路結構層130的順序。It should be noted that this embodiment does not limit the order in which the reconfiguration
接著,請參考圖1N,以熱壓合的方式,壓合重配置線路結構層110、連接結構層120以及增層線路結構層130,以使連接結構層120位於重配置線路結構層110與增層線路結構層130之間。此時,絕緣層20及核心基板30仍位在重配置線路結構層110上。特別是,第一連接墊119分別透過導電膠柱125與第二連接墊132電性連接,且第一連接墊119與第二連接墊132分別嵌入基材122的相對兩表面。在熱壓合時,重配置線路結構層110與增層線路結構層130直接接觸連接結構層120的基材122且擠壓導電膠柱125使其變形。此時,基材122與導電膠柱125因未完全固化且具有可撓性及黏性,可黏接重配置線路結構層110與增層線路結構層130,且第一連接墊119與第二連接墊132分別擠入基材122內,而嵌入於基材122中。於壓合固化後,連接結構層120的基材122與導電膠柱125從B階段狀態轉變成一C階段狀態。Next, referring to FIG. 1N , the reconfiguration
之後,請同時參考圖1N與圖1O,移除絕緣層20與核心基材30,而暴露出重配置線路結構層110的第一介電層112。After that, please refer to FIG. 1N and FIG. 1O at the same time, the insulating
最後,請參考圖1P,形成一表面處理層140於重配置線路結構層110的晶片接墊112上。此處,表面處理層140的材質例如是化鎳鈀浸金(ENEPIG)、有機保銲劑(OSP)或無電鍍鎳浸金(ENIG)。至此,已完成電路板結構100的製作。Finally, referring to FIG. 1P , a
在結構上,請再參考圖1P,在本實施例中,電路板結構100包括重配置線路結構層110、增層線路結構層130以及連接結構層120。重配置線路結構層110包括第一連接墊119。增層線路結構層130配置於重配置線路結構層110的一側,且包括第二連接墊132。重配置線路結構層110的線寬與線距小於增層線路結構層130的線寬與線距。連接結構層120配置於重配置線路結構層110與增層線路結構層130之間,且包括基材122與貫穿基材122的導電膠柱125。第一連接墊119分別透過導電膠柱125與第二連接墊132電性連接。第一連接墊119與第二連接墊132分別嵌入基材122的相對兩表面。In terms of structure, please refer to FIG. 1P again. In this embodiment, the
詳細來說,本實施例的重配置線路結構層110還包括晶片接墊112、第一介電層114、重配置線路116、第二介電層118、第一導電通孔T1以及第二導電通孔T2。第一介電層114、重配置線路116及第二介電層118呈交替堆疊配置。第一連接墊119、重配置線路116以及晶片接墊112透過第一導電通孔T1及第二導電通孔T2電性連接。晶片接墊112內埋於第一介電層114內,而第一連接墊119位於第二介電層118上,且第二介電層118直接接觸連接結構層120的基材122。In detail, the reconfiguration
此外,本實施例的電路板結構還包括表面處理層140以及防銲層150。表面處理層140配置於重配置線路結構層110的晶片接墊112上,其中表面處理層140的材質例如是化鎳鈀浸金(ENEPIG)、有機保銲劑(OSP)或無電鍍鎳浸金(ENIG)。防銲層150配置於增層線路結構層130相對遠離連接結構層120的表面131上,且覆蓋部分增層線路結構層130而定義出銲球接墊SP。In addition, the circuit board structure of this embodiment further includes a
簡言之,由於本實施例是透過壓合重配置線路結構層110、連接結構層120以及增層線路結構層130的方式來形成電路板結構100,因此無須使用銲料及底膠,可有效地降低電路板結構100的製作成本。此外,由於無使用銲點(solder joints),因此可有效地提高重配置線路結構層110、連接結構層120以及增層線路結構層130之間的接合良率,進而提升本實施例的電路板結構100的結構可靠度。In short, since the
在應用上,請參考圖2,晶片200可透過銲料210與重配置線路結構層110的晶片接墊112電性連接,而形成一晶片封裝結構300。In application, please refer to FIG. 2 , the
綜上所述,在本發明的電路板結構的製作方法中,是透過壓合重配置線路結構層、連接結構層以及增層線路結構層的方式來形成電路板結構,其中重配置線路結構層的第一連接墊分別透過連接結構層的導電膠柱與增層線路結構層的第二連接墊電性連接,且第一連接墊與第二連接墊分別嵌入連接結構層的基材的相對兩表面。藉此,本發明的電路板結構的製作方法無須使用銲點(solder joints)及底膠,可有效地降低電路板結構的製作成本。此外,因為無使用銲料,因此可有效地提高重配置線路結構層、連接結構層以及增層線路結構層之間的接合良率,進而提升本發明的電路板結構的結構可靠度。To sum up, in the manufacturing method of the circuit board structure of the present invention, the circuit board structure is formed by laminating the reconfigured circuit structure layer, the connection structure layer and the build-up circuit structure layer, wherein the circuit board structure layer is reconfigured The first connection pads are electrically connected to the second connection pads of the build-up circuit structure layer through the conductive glue posts of the connection structure layer respectively, and the first connection pads and the second connection pads are respectively embedded in the opposite two sides of the base material of the connection structure layer. surface. Thereby, the method for fabricating the circuit board structure of the present invention does not need to use solder joints and primers, which can effectively reduce the fabrication cost of the circuit board structure. In addition, because no solder is used, the bonding yield between the reconfigured circuit structure layer, the connection structure layer and the build-up circuit structure layer can be effectively improved, thereby improving the structural reliability of the circuit board structure of the present invention.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed above by the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the scope of the appended patent application.
10:暫時基板 12:離形膜 20:絕緣層 30:核心基板 32:核心層 34:第一銅箔層 36:第二銅箔層 110:重配置線路結構層 112:晶片接墊 114:第一介電層 116:重配置線路 118:第二介電層 119:第一連接墊 120:連接結構層 122:基材 125:導電膠柱 130:增層線路結構層 131:表面 132:第二連接墊 140:表面處理層 150:防銲層 200:晶片 210:銲料 300:晶片封裝結構 H1:第一開口 H2:第二開口 M:金屬層 P1、P2:圖案化光阻層 S:種子層 T1:第一導電通孔 T2:第二導電通孔 SP:銲球接墊10: Temporary substrate 12: Release film 20: Insulation layer 30: Core substrate 32: Core layer 34: The first copper foil layer 36: Second copper foil layer 110: Reconfigure the circuit structure layer 112: Chip pads 114: first dielectric layer 116: Reconfiguration line 118: Second Dielectric Layer 119: First connection pad 120: Connecting Structural Layers 122: Substrate 125: Conductive glue column 130: Build-up circuit structure layer 131: Surface 132: Second connection pad 140: Surface treatment layer 150: Solder mask 200: Wafer 210: Solder 300: Chip package structure H1: first opening H2: Second opening M: metal layer P1, P2: patterned photoresist layer S: seed layer T1: first conductive via T2: Second conductive via SP: Solder Ball Pad
圖1A至圖1P是依照本發明的一實施例的一種電路板結構的製作方法的剖面示意圖。 圖2是將晶片配置於圖1P的電路板結構的剖面示意圖。 1A to 1P are schematic cross-sectional views of a method for fabricating a circuit board structure according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of the circuit board structure of FIG. 1P where a wafer is placed.
100:電路板結構 100: Circuit Board Structure
110:重配置線路結構層 110: Reconfigure the circuit structure layer
112:晶片接墊 112: Chip pads
114:第一介電層 114: first dielectric layer
116:重配置線路 116: Reconfiguration line
118:第二介電層 118: Second Dielectric Layer
119:第一連接墊 119: First connection pad
120:連接結構層 120: Connecting Structural Layers
122:基材 122: Substrate
125:導電膠柱 125: Conductive glue column
130:增層線路結構層 130: Build-up circuit structure layer
131:表面 131: Surface
132:第二連接墊 132: Second connection pad
140:表面處理層 140: Surface treatment layer
150:防銲層 150: Solder mask
T1:第一導電通孔 T1: first conductive via
T2:第二導電通孔 T2: Second conductive via
SP:銲球接墊 SP: Solder Ball Pad
Claims (10)
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| TWI698972B (en) * | 2019-12-16 | 2020-07-11 | 欣興電子股份有限公司 | Circuit substrate |
| TWI708541B (en) * | 2019-06-06 | 2020-10-21 | 欣興電子股份有限公司 | Circuit carrier board and manufacturing method thereof |
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| TWI708541B (en) * | 2019-06-06 | 2020-10-21 | 欣興電子股份有限公司 | Circuit carrier board and manufacturing method thereof |
| TWI698972B (en) * | 2019-12-16 | 2020-07-11 | 欣興電子股份有限公司 | Circuit substrate |
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