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TWI762310B - Circuit board structure and manufacturing method thereof - Google Patents

Circuit board structure and manufacturing method thereof Download PDF

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TWI762310B
TWI762310B TW110117243A TW110117243A TWI762310B TW I762310 B TWI762310 B TW I762310B TW 110117243 A TW110117243 A TW 110117243A TW 110117243 A TW110117243 A TW 110117243A TW I762310 B TWI762310 B TW I762310B
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layer
structure layer
circuit
build
connection
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TW110117243A
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TW202245558A (en
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劉漢誠
彭家瑜
楊凱銘
林溥如
柯正達
曾子章
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欣興電子股份有限公司
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Abstract

A circuit board structure includes a redistribution structure layer, a build-up circuit structure layer and a connection structure layer. The redistribution structure layer includes a plurality of first connecting pads. The build-up circuit structure layer is disposed on one side of the redistribution structure layer and includes a plurality of second connecting pads. A line width and a line spacing of the redistribution structure layer are smaller than a line width and the line spacing of the build-up circuit structure layer. The connection structure layer is disposed between the redistribution structure layer and the build-up circuit structure layer, and includes a substrate and a plurality of conductive paste pillars penetrating the substrate. The first connecting pads are electrically connected to the second connecting pads through the conductive paste pillars, respectively. The first connecting pads and the second connecting pads are respectively embedded in two opposite surface of the substrate.

Description

電路板結構及其製作方法Circuit board structure and method of making the same

本發明是有關於一種基板結構及其製作方法,且特別是有關於一種電路板結構及其製作方法。The present invention relates to a substrate structure and a manufacturing method thereof, and in particular, to a circuit board structure and a manufacturing method thereof.

一般來說,二個具有線路或導電結構的電路板要相互結合,都是透過銲點(solder joints)來連接,且透過底膠(underfill)來填充於二個基板之間以密封銲點。然而,在銲料高溫迴銲的過程中,較大面積尺寸的電路板因應力無法釋放,而容易發生較大的翹曲,進而降低二電路板之間的組裝良率。Generally speaking, two circuit boards with lines or conductive structures are to be combined with each other, and they are connected through solder joints, and are filled between the two substrates through underfill to seal the solder joints. However, in the process of high-temperature reflow of the solder, the circuit board with a larger area size cannot be relieved of the stress, and a large warpage is likely to occur, thereby reducing the assembly yield between the two circuit boards.

本發明提供一種電路板結構,無需使用銲料及底膠,可降低成本,且具有較佳的結構可靠度。The invention provides a circuit board structure without using solder and primer, which can reduce the cost and has better structural reliability.

本發明還提供一種電路板結構的製作方法,用以製作上述的電路板結構。The present invention also provides a manufacturing method of a circuit board structure, which is used to manufacture the above-mentioned circuit board structure.

本發明的電路板結構,其包括一重配置線路結構層、一增層線路結構層以及一連接結構層。重配置線路結構層包括多個第一連接墊。增層線路結構層配置於重配置線路結構層的一側,且包括多個第二連接墊。重配置線路結構層的線寬與線距小於增層線路結構層的線寬與線距。連接結構層配置於重配置線路結構層與增層線路結構層之間,且包括一基材與貫穿基材的多個導電膠柱。第一連接墊分別透過導電膠柱與第二連接墊電性連接。第一連接墊與第二連接墊分別嵌入基材的相對兩表面。The circuit board structure of the present invention includes a reconfigured circuit structure layer, a build-up circuit structure layer and a connection structure layer. The reconfiguration line structure layer includes a plurality of first connection pads. The build-up circuit structure layer is disposed on one side of the reconfigured circuit structure layer and includes a plurality of second connection pads. The line width and line spacing of the reconfigured circuit structure layer are smaller than those of the build-up circuit structure layer. The connection structure layer is disposed between the reconfigured circuit structure layer and the build-up circuit structure layer, and includes a base material and a plurality of conductive glue columns penetrating the base material. The first connection pads are electrically connected to the second connection pads through the conductive glue columns respectively. The first connection pad and the second connection pad are respectively embedded in two opposite surfaces of the substrate.

在本發明的一實施例中,上述的重配置線路結構層更包括多個介電層、至少一重配置線路、多個導電通孔以及多個晶片接墊。介電層與至少一重配置線路交替配置。第一連接墊、重配置線路以及晶片接墊透過導電通孔電性連接。介電層中位於最外側的是一第一介電層與一第二介電層。晶片接墊內埋於第一介電層內,而第一連接墊位於第二介電層上,且第二介電層直接接觸連接結構層的基材。In an embodiment of the present invention, the above-mentioned reconfiguration circuit structure layer further includes a plurality of dielectric layers, at least one reconfiguration circuit, a plurality of conductive vias, and a plurality of die pads. The dielectric layers are alternately arranged with at least one reconfiguration line. The first connection pads, the reconfiguration lines and the chip pads are electrically connected through the conductive vias. The outermost dielectric layers are a first dielectric layer and a second dielectric layer. The chip pads are buried in the first dielectric layer, the first connection pads are located on the second dielectric layer, and the second dielectric layer directly contacts the base material of the connection structure layer.

在本發明的一實施例中,上述的介電層的材質包括光敏介電材料或味之素堆積薄膜(Ajinomoto Build-up Film, ABF)。In an embodiment of the present invention, the material of the above-mentioned dielectric layer includes a photosensitive dielectric material or an Ajinomoto Build-up Film (ABF).

在本發明的一實施例中,上述的電路板結構還包括一表面處理層,配置於重配置線路結構層的晶片接墊上。表面處理層的材質包括化鎳鈀浸金(ENEPIG)、有機保銲劑(organic solderability preservatives, OSP)或無電鍍鎳浸金(Electroless Nickel Immersion Gold,ENIG)。In an embodiment of the present invention, the above-mentioned circuit board structure further includes a surface treatment layer disposed on the chip pads of the reconfigured circuit structure layer. The material of the surface treatment layer includes nickel palladium immersion gold (ENEPIG), organic solderability preservatives (OSP) or electroless nickel immersion gold (ENIG).

在本發明的一實施例中,上述的電路板結構還包括一防銲層,配置於增層線路結構層相對遠離連接結構層的一表面上,且覆蓋部分增層線路結構層而定義出多個銲球接墊。In an embodiment of the present invention, the above-mentioned circuit board structure further includes a solder mask layer, which is disposed on a surface of the build-up circuit structure layer relatively far from the connection structure layer, and covers part of the build-up circuit structure layer to define a plurality of layers. solder ball pads.

本發明的電路板結構的製作方法,其包括以下步驟。提供包括多個第一連接墊的一重配置線路結構層。提供包括一基材與貫穿基材的多個導電膠柱的一連接結構層,其中連接結構層處於一B階段狀態。提供包括多個第二連接墊的一增層線路結構層,其中重配置線路結構層的線寬與線距小於增層線路結構層的線寬與線距。壓合重配置線路結構層、連接結構層以及增層線路結構層,以使連接結構層位於重配置線路結構層與增層線路結構層之間。第一連接墊分別透過導電膠柱與第二連接墊電性連接,且第一連接墊與第二連接墊分別嵌入基材的相對兩表面,而由基材與導電膠柱構成的連接結構層從B階段狀態轉變成一C階段狀態。The manufacturing method of the circuit board structure of the present invention includes the following steps. A reconfigured line structure layer including a plurality of first connection pads is provided. A connection structure layer including a base material and a plurality of conductive glue columns penetrating the base material is provided, wherein the connection structure layer is in a B-stage state. A build-up line structure layer including a plurality of second connection pads is provided, wherein the line width and line spacing of the reconfigured line structure layer are smaller than those of the build-up line structure layer. The reconfiguration line structure layer, the connection structure layer and the build-up line structure layer are pressed together, so that the connection structure layer is located between the reconfiguration line structure layer and the build-up line structure layer. The first connection pads are electrically connected to the second connection pads respectively through the conductive glue posts, and the first connection pads and the second connection pads are respectively embedded in two opposite surfaces of the base material, and the connection structure layer formed by the base material and the conductive glue posts From a B-stage state to a C-stage state.

在本發明的一實施例中,上述的提供包括第一連接墊的重配置線路結構層的步驟包括以下步驟。提供一暫時基板及位於暫時基板上的一離形膜。形成一絕緣層於離形膜上。提供一核心基板於絕緣層上。核心基板包括一核心層以及位於核心層相對兩側的一第一銅箔層與一第二銅箔層。第二銅箔層位於核心層與絕緣層之間。形成多個晶片接墊於第一銅箔層上。形成一第一介電層於第一銅箔層上。第一介電層覆蓋晶片接墊且具有多個第一開口,而第一開口暴露出部分晶片接墊。形成至少一重配置線路與多個第一導電通孔。重配置線路配置於第一介電層上,而第一導電通孔分別位於第一開口內且電性連接重配置線路與晶片接墊。形成一第二介電層於重配置線路上。第二介電層具有多個第二開口,第二開口暴露出部分重配置線路。形成第一連接墊與多個第二導電通孔。第一連接墊配置於第二介電層上,而第二導電通孔分別位於第二開口內且電性連接重配置線路與第一連接墊。移除暫時基板與離形膜,而暴露出絕緣層。In an embodiment of the present invention, the above-mentioned step of providing the reconfigured circuit structure layer including the first connection pad includes the following steps. A temporary substrate and a release film on the temporary substrate are provided. An insulating layer is formed on the release film. A core substrate is provided on the insulating layer. The core substrate includes a core layer, a first copper foil layer and a second copper foil layer on opposite sides of the core layer. The second copper foil layer is located between the core layer and the insulating layer. A plurality of chip pads are formed on the first copper foil layer. A first dielectric layer is formed on the first copper foil layer. The first dielectric layer covers the die pads and has a plurality of first openings, and the first openings expose part of the die pads. At least one reconfiguration line and a plurality of first conductive vias are formed. The redistribution lines are disposed on the first dielectric layer, and the first conductive vias are respectively located in the first openings and electrically connect the redistribution lines and the chip pads. A second dielectric layer is formed on the reconfiguration line. The second dielectric layer has a plurality of second openings, and the second openings expose part of the reconfiguration lines. A first connection pad and a plurality of second conductive vias are formed. The first connection pads are disposed on the second dielectric layer, and the second conductive vias are respectively located in the second openings and electrically connect the redistribution lines and the first connection pads. The temporary substrate and release film are removed to expose the insulating layer.

在本發明的一實施例中,上述的第一介電層的材質與第二介電層的材質包括光敏介電材料或味之素堆積薄膜。In an embodiment of the present invention, the material of the first dielectric layer and the material of the second dielectric layer include a photosensitive dielectric material or an Ajinomoto deposition film.

在本發明的一實施例中,上述於壓合重配置線路結構層、連接結構層以及增層線路結構層之後,更包括:移除絕緣層與核心基材,而暴露出重配置線路結構層的第一介電層。形成一表面處理層於重配置線路結構層的晶片接墊上。表面處理層的材質包括化鎳鈀浸金、有機保銲劑或無電鍍鎳浸金。In an embodiment of the present invention, after laminating the reconfiguration circuit structure layer, the connection structure layer and the build-up circuit structure layer, the method further includes: removing the insulating layer and the core substrate to expose the reconfiguration circuit structure layer the first dielectric layer. A surface treatment layer is formed on the chip pads of the reconfigured circuit structure layer. The material of the surface treatment layer includes nickel palladium immersion gold, organic solder resist or electroless nickel immersion gold.

在本發明的一實施例中,上述於壓合重配置線路結構層、連接結構層以及增層線路結構層之前,更包括形成一防銲層於增層線路結構層相對遠離連接結構層的一表面上。防銲層覆蓋部分增層線路結構層而定義出多個銲球接墊。In an embodiment of the present invention, before laminating the reconfigured circuit structure layer, the connection structure layer, and the build-up circuit structure layer, it further includes forming a solder mask layer on the build-up circuit structure layer that is relatively far from the connection structure layer. on the surface. The solder mask covers part of the build-up circuit structure layer to define a plurality of solder ball pads.

基於上述,在本發明的電路板結構的製作方法中,是透過壓合重配置線路結構層、連接結構層以及增層線路結構層的方式來形成電路板結構,其中重配置線路結構層的第一連接墊分別透過連接結構層的導電膠柱與增層線路結構層的第二連接墊電性連接,且第一連接墊與第二連接墊分別嵌入連接結構層的基材的相對兩表面。藉此,本發明的電路板結構的製作方法無須使用銲料及底膠,可有效地降低電路板結構的製作成本。此外,因為無使用銲料,因此可有效地提高重配置線路結構層、連接結構層以及增層線路結構層之間的接合良率,進而提升本發明的電路板結構的結構可靠度。Based on the above, in the manufacturing method of the circuit board structure of the present invention, the circuit board structure is formed by pressing the reconfigured circuit structure layer, the connection structure layer and the build-up circuit structure layer, wherein the first layer of the reconfigured circuit structure layer is formed. A connection pad is electrically connected to the second connection pad of the build-up circuit structure layer through the conductive glue column of the connection structure layer respectively, and the first connection pad and the second connection pad are respectively embedded in two opposite surfaces of the base material of the connection structure layer. Therefore, the method for fabricating the circuit board structure of the present invention does not need to use solder and primer, which can effectively reduce the fabrication cost of the circuit board structure. In addition, because no solder is used, the bonding yield between the reconfigured circuit structure layer, the connection structure layer and the build-up circuit structure layer can be effectively improved, thereby improving the structural reliability of the circuit board structure of the present invention.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, the following embodiments are given and described in detail with the accompanying drawings as follows.

圖1A至圖1P是依照本發明的一實施例的一種電路板結構的製作方法的剖面示意圖。圖2是將晶片配置於圖1P的電路板結構的剖面示意圖。關於本實施例的電路板結構的製作方法,首先,請參考圖1A,提供暫時基板10及位於暫時基板10上的離形膜12。此處,暫時基板10的材質例如是玻璃或塑膠,其為沒有線路的基板。1A to 1P are schematic cross-sectional views of a method for fabricating a circuit board structure according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of the circuit board structure of FIG. 1P where a wafer is placed. Regarding the fabrication method of the circuit board structure of the present embodiment, first, referring to FIG. 1A , a temporary substrate 10 and a release film 12 on the temporary substrate 10 are provided. Here, the material of the temporary substrate 10 is, for example, glass or plastic, which is a substrate without lines.

接著,請參考圖1B,形成絕緣層20於離形膜12上,其中絕緣層20的材質例如是味之素堆積薄膜(ABF),但不以此為限。Next, referring to FIG. 1B , an insulating layer 20 is formed on the release film 12 , wherein the material of the insulating layer 20 is, for example, Ajinomoto Buildup Film (ABF), but not limited thereto.

緊接著,請再參考圖1B,提供核心基板30於絕緣層20上,其中核心基板30包括核心層32以及位於核心層32相對兩側的第一銅箔層34與第二銅箔層36。於一實施例中,可對第一銅箔層34的表面進行化學-機械研磨(Chemical-mechanical polishing)程序以表面平坦化。此處,第二銅箔層36位於核心層32與絕緣層20之間。Next, referring to FIG. 1B again, a core substrate 30 is provided on the insulating layer 20 , wherein the core substrate 30 includes a core layer 32 and a first copper foil layer 34 and a second copper foil layer 36 on opposite sides of the core layer 32 . In one embodiment, a chemical-mechanical polishing process may be performed on the surface of the first copper foil layer 34 to planarize the surface. Here, the second copper foil layer 36 is located between the core layer 32 and the insulating layer 20 .

接著,請參考圖1C,形成圖案化光阻層P1於該第一銅箔層34上,其中圖案化光阻層P1暴露出部分第一銅箔層34。Next, referring to FIG. 1C , a patterned photoresist layer P1 is formed on the first copper foil layer 34 , wherein part of the first copper foil layer 34 is exposed from the patterned photoresist layer P1 .

接著,請參考圖1D,形成多個晶片接墊112於第一銅箔層34上,其中晶片接墊112位於圖案化光阻層P1所暴露出的第一銅箔層34上。此處,形成晶片接墊112的方法例如是電鍍。Next, referring to FIG. 1D , a plurality of chip pads 112 are formed on the first copper foil layer 34 , wherein the chip pads 112 are located on the first copper foil layer 34 exposed by the patterned photoresist layer P1 . Here, the method of forming the die pads 112 is, for example, electroplating.

接著,請同時參考圖1D與圖1E,移除圖案化光阻層P1,而暴露出第一銅箔層34。Next, referring to FIG. 1D and FIG. 1E at the same time, the patterned photoresist layer P1 is removed to expose the first copper foil layer 34 .

接著,請參考圖1F,形成第一介電層114於第一銅箔層34上,其中第一介電層114覆蓋晶片接墊112且具有多個第一開口H1,而第一開口H1暴露出部分晶片接墊112。此處,第一介電層114的材質例如是光敏介電材料或味之素堆積薄膜(ABF)。Next, referring to FIG. 1F, a first dielectric layer 114 is formed on the first copper foil layer 34, wherein the first dielectric layer 114 covers the chip pads 112 and has a plurality of first openings H1, and the first openings H1 are exposed Part of the die pads 112 are removed. Here, the material of the first dielectric layer 114 is, for example, a photosensitive dielectric material or an Ajinomoto build-up film (ABF).

接著,請參考圖1G,形成種子層S於第一介電層114上,其中種子層S覆蓋第一介電層114及第一開口H1的內壁且連接至晶片接墊112。Next, referring to FIG. 1G , a seed layer S is formed on the first dielectric layer 114 , wherein the seed layer S covers the first dielectric layer 114 and the inner wall of the first opening H1 and is connected to the chip pad 112 .

接著,請參考圖1H,形成圖案化光阻層P2於種子層S上,其中圖案化光阻層P2暴露出部分種子層S。Next, referring to FIG. 1H , a patterned photoresist layer P2 is formed on the seed layer S, wherein part of the seed layer S is exposed from the patterned photoresist layer P2 .

接著,請參考圖1I,形成金屬層M於圖案化光阻層P2所暴露出的種子層S上,其中形成金屬層M的方法例如是電鍍。Next, referring to FIG. 1I, a metal layer M is formed on the seed layer S exposed by the patterned photoresist layer P2, wherein the method of forming the metal layer M is, for example, electroplating.

接著,請參考圖1J,移除圖案化光阻層P2及位於其下方的種子層S,而形成重配置線路116與第一導電通孔T1。此處,重配置線路116位於第一介電層114上,而第一導電通孔T1分別位於第一開口H1內且電性連接重配置線路116與晶片接墊112。Next, referring to FIG. 1J , the patterned photoresist layer P2 and the seed layer S located under the patterned photoresist layer P2 are removed to form the reconfiguration line 116 and the first conductive via T1 . Here, the relocation lines 116 are located on the first dielectric layer 114 , and the first conductive vias T1 are respectively located in the first openings H1 and electrically connect the relocation lines 116 and the die pads 112 .

接著,可重複圖1F至圖1J的步驟,來形成所需的重配置線路116及第一導電通孔T1的層數,其中重複的次數可依據使用者的需求。Next, the steps of FIG. 1F to FIG. 1J can be repeated to form the required number of layers of the reconfiguration lines 116 and the first conductive vias T1 , and the number of repetitions can be based on user requirements.

接著,請參考圖1K,形成一第二介電層118於重配置線路116上,其中第二介電層118具有多個第二開口H2,且第二開口H2暴露出部分重配置線路116。此處,第二介電層118的材質例如是光敏介電材料或味之素堆積薄膜(ABF)。Next, referring to FIG. 1K , a second dielectric layer 118 is formed on the reconfiguration circuit 116 , wherein the second dielectric layer 118 has a plurality of second openings H2 , and the second openings H2 expose part of the reconfiguration circuit 116 . Here, the material of the second dielectric layer 118 is, for example, a photosensitive dielectric material or an Ajinomoto build-up film (ABF).

緊接著,請再參考圖1K,同圖1G至圖1J的步驟,形成第一連接墊119與多個第二導電通孔T2。此處,第一連接墊119配置於第二介電層118上,而第二導電通孔T2分別位於第二開口H2內且電性連接重配置線路116與第一連接墊119。至此,已完成包括第一連接墊119的重配置線路結構層110的製作。此處,重配置線路結構層110具體化為具有細線路的重配置線路結構層。Next, referring to FIG. 1K again, the same steps as in FIGS. 1G to 1J are used to form the first connection pads 119 and a plurality of second conductive vias T2 . Here, the first connection pads 119 are disposed on the second dielectric layer 118 , and the second conductive vias T2 are respectively located in the second openings H2 and electrically connect the redistribution lines 116 and the first connection pads 119 . So far, the fabrication of the reconfigured circuit structure layer 110 including the first connection pads 119 has been completed. Here, the reconfiguration line structure layer 110 is embodied as a reconfiguration line structure layer with thin lines.

接著,請同時參考圖1K與圖1L,移除暫時基板10與離形膜12,而暴露出絕緣層20。Next, referring to FIG. 1K and FIG. 1L at the same time, the temporary substrate 10 and the release film 12 are removed to expose the insulating layer 20 .

接著,請參考圖1M,提供包括一基材122與貫穿基材122的多個導電膠柱125的一連接結構層120,其中連接結構層120處於一B階段狀態。此處,基材122的材質例如是預浸料(prepreg, PP),而導電膠柱125的材質例如是導電金屬膠,以印刷法(printing)進行塗佈製作,可具有導電與導熱的效果,且適於與任何金屬材質進行接合。Next, referring to FIG. 1M , a connection structure layer 120 including a substrate 122 and a plurality of conductive glue posts 125 penetrating the substrate 122 is provided, wherein the connection structure layer 120 is in a B-stage state. Here, the material of the base material 122 is, for example, a prepreg (PP), and the material of the conductive glue column 125 is, for example, a conductive metal glue, which is coated and fabricated by a printing method, and can have the effects of electrical conductivity and heat conduction. , and suitable for bonding with any metal material.

接著,請再參考圖1M,提供包括多個第二連接墊132的一增層線路結構層130,其中重配置線路結構層110的線寬與線距小於增層線路結構層130的線寬與線距。此時,已形成一防銲層150於增層線路結構層130相對遠離連接結構層120的一表面131上。防銲層150覆蓋部分增層線路結構層130而定義出多個銲球接墊SP。此處,增層線路結構層130具體化為一多層電路板。Next, referring to FIG. 1M again, a build-up wiring structure layer 130 including a plurality of second connection pads 132 is provided, wherein the line width and line spacing of the reconfigured wiring structure layer 110 are smaller than those of the build-up wiring structure layer 130 . line spacing. At this time, a solder mask layer 150 has been formed on a surface 131 of the build-up circuit structure layer 130 relatively far from the connection structure layer 120 . The solder mask layer 150 covers part of the build-up circuit structure layer 130 to define a plurality of solder ball pads SP. Here, the build-up circuit structure layer 130 is embodied as a multilayer circuit board.

須說明的是,本實施例並沒有限制提供重配置線路結構層110、連接結構層120及增層線路結構層130的順序。It should be noted that this embodiment does not limit the order in which the reconfiguration circuit structure layer 110 , the connection structure layer 120 and the build-up circuit structure layer 130 are provided.

接著,請參考圖1N,以熱壓合的方式,壓合重配置線路結構層110、連接結構層120以及增層線路結構層130,以使連接結構層120位於重配置線路結構層110與增層線路結構層130之間。此時,絕緣層20及核心基板30仍位在重配置線路結構層110上。特別是,第一連接墊119分別透過導電膠柱125與第二連接墊132電性連接,且第一連接墊119與第二連接墊132分別嵌入基材122的相對兩表面。在熱壓合時,重配置線路結構層110與增層線路結構層130直接接觸連接結構層120的基材122且擠壓導電膠柱125使其變形。此時,基材122與導電膠柱125因未完全固化且具有可撓性及黏性,可黏接重配置線路結構層110與增層線路結構層130,且第一連接墊119與第二連接墊132分別擠入基材122內,而嵌入於基材122中。於壓合固化後,連接結構層120的基材122與導電膠柱125從B階段狀態轉變成一C階段狀態。Next, referring to FIG. 1N , the reconfiguration circuit structure layer 110 , the connection structure layer 120 and the build-up circuit structure layer 130 are pressed together by thermocompression, so that the connection structure layer 120 is located between the reconfiguration circuit structure layer 110 and the build-up circuit structure layer 110 . between the layers 130 of the circuit structure. At this time, the insulating layer 20 and the core substrate 30 are still located on the reconfigured circuit structure layer 110 . In particular, the first connection pads 119 are electrically connected to the second connection pads 132 through the conductive glue posts 125 respectively, and the first connection pads 119 and the second connection pads 132 are respectively embedded in two opposite surfaces of the substrate 122 . During thermocompression bonding, the reconfigured circuit structure layer 110 and the build-up circuit structure layer 130 are in direct contact with the base material 122 of the connection structure layer 120 and the conductive glue posts 125 are pressed to deform. At this time, since the base material 122 and the conductive glue post 125 are not fully cured and have flexibility and adhesion, the reconfiguration circuit structure layer 110 and the build-up circuit structure layer 130 can be bonded together, and the first connection pad 119 and the second connection pad 119 can be bonded together. The connection pads 132 are respectively extruded into the base material 122 and embedded in the base material 122 . After the lamination and curing, the substrate 122 and the conductive glue post 125 of the connection structure layer 120 are transformed from a B-stage state to a C-stage state.

之後,請同時參考圖1N與圖1O,移除絕緣層20與核心基材30,而暴露出重配置線路結構層110的第一介電層112。After that, please refer to FIG. 1N and FIG. 1O at the same time, the insulating layer 20 and the core substrate 30 are removed, and the first dielectric layer 112 of the reconfigured circuit structure layer 110 is exposed.

最後,請參考圖1P,形成一表面處理層140於重配置線路結構層110的晶片接墊112上。此處,表面處理層140的材質例如是化鎳鈀浸金(ENEPIG)、有機保銲劑(OSP)或無電鍍鎳浸金(ENIG)。至此,已完成電路板結構100的製作。Finally, referring to FIG. 1P , a surface treatment layer 140 is formed on the chip pads 112 of the reconfigured circuit structure layer 110 . Here, the material of the surface treatment layer 140 is, for example, nickel palladium immersion gold (ENEPIG), organic solder resist (OSP) or electroless nickel immersion gold (ENIG). So far, the fabrication of the circuit board structure 100 has been completed.

在結構上,請再參考圖1P,在本實施例中,電路板結構100包括重配置線路結構層110、增層線路結構層130以及連接結構層120。重配置線路結構層110包括第一連接墊119。增層線路結構層130配置於重配置線路結構層110的一側,且包括第二連接墊132。重配置線路結構層110的線寬與線距小於增層線路結構層130的線寬與線距。連接結構層120配置於重配置線路結構層110與增層線路結構層130之間,且包括基材122與貫穿基材122的導電膠柱125。第一連接墊119分別透過導電膠柱125與第二連接墊132電性連接。第一連接墊119與第二連接墊132分別嵌入基材122的相對兩表面。In terms of structure, please refer to FIG. 1P again. In this embodiment, the circuit board structure 100 includes a reconfiguration circuit structure layer 110 , a build-up circuit structure layer 130 and a connection structure layer 120 . The reconfiguration line structure layer 110 includes first connection pads 119 . The build-up circuit structure layer 130 is disposed on one side of the reconfiguration circuit structure layer 110 and includes a second connection pad 132 . The line width and line spacing of the reconfigured circuit structure layer 110 are smaller than those of the build-up circuit structure layer 130 . The connection structure layer 120 is disposed between the reconfigured circuit structure layer 110 and the build-up circuit structure layer 130 , and includes a base material 122 and a conductive glue column 125 penetrating the base material 122 . The first connection pads 119 are electrically connected to the second connection pads 132 through the conductive glue posts 125 respectively. The first connection pads 119 and the second connection pads 132 are respectively embedded in two opposite surfaces of the substrate 122 .

詳細來說,本實施例的重配置線路結構層110還包括晶片接墊112、第一介電層114、重配置線路116、第二介電層118、第一導電通孔T1以及第二導電通孔T2。第一介電層114、重配置線路116及第二介電層118呈交替堆疊配置。第一連接墊119、重配置線路116以及晶片接墊112透過第一導電通孔T1及第二導電通孔T2電性連接。晶片接墊112內埋於第一介電層114內,而第一連接墊119位於第二介電層118上,且第二介電層118直接接觸連接結構層120的基材122。In detail, the reconfiguration circuit structure layer 110 of this embodiment further includes die pads 112 , a first dielectric layer 114 , a reconfiguration circuit 116 , a second dielectric layer 118 , a first conductive via T1 and a second conductive via Through hole T2. The first dielectric layers 114 , the reconfiguration lines 116 and the second dielectric layers 118 are alternately stacked. The first connection pad 119 , the reconfiguration line 116 and the die pad 112 are electrically connected through the first conductive via T1 and the second conductive via T2 . The die pads 112 are buried in the first dielectric layer 114 , and the first connection pads 119 are located on the second dielectric layer 118 , and the second dielectric layer 118 directly contacts the substrate 122 of the connection structure layer 120 .

此外,本實施例的電路板結構還包括表面處理層140以及防銲層150。表面處理層140配置於重配置線路結構層110的晶片接墊112上,其中表面處理層140的材質例如是化鎳鈀浸金(ENEPIG)、有機保銲劑(OSP)或無電鍍鎳浸金(ENIG)。防銲層150配置於增層線路結構層130相對遠離連接結構層120的表面131上,且覆蓋部分增層線路結構層130而定義出銲球接墊SP。In addition, the circuit board structure of this embodiment further includes a surface treatment layer 140 and a solder resist layer 150 . The surface treatment layer 140 is disposed on the chip pads 112 of the reconfigured circuit structure layer 110 , wherein the material of the surface treatment layer 140 is, for example, nickel-palladium immersion gold (ENEPIG), organic solder resist (OSP) or electroless nickel-immersion gold ( ENIG). The solder resist layer 150 is disposed on the surface 131 of the build-up circuit structure layer 130 relatively far from the connection structure layer 120 , and covers a part of the build-up circuit structure layer 130 to define solder ball pads SP.

簡言之,由於本實施例是透過壓合重配置線路結構層110、連接結構層120以及增層線路結構層130的方式來形成電路板結構100,因此無須使用銲料及底膠,可有效地降低電路板結構100的製作成本。此外,由於無使用銲點(solder joints),因此可有效地提高重配置線路結構層110、連接結構層120以及增層線路結構層130之間的接合良率,進而提升本實施例的電路板結構100的結構可靠度。In short, since the circuit board structure 100 is formed by laminating the re-arranged circuit structure layer 110 , the connection structure layer 120 and the build-up circuit structure layer 130 in this embodiment, there is no need to use solder and primer, which can effectively The manufacturing cost of the circuit board structure 100 is reduced. In addition, since no solder joints are used, the bonding yield between the reconfigured circuit structure layer 110 , the connection structure layer 120 and the build-up circuit structure layer 130 can be effectively improved, thereby improving the circuit board of this embodiment. Structural reliability of the structure 100 .

在應用上,請參考圖2,晶片200可透過銲料210與重配置線路結構層110的晶片接墊112電性連接,而形成一晶片封裝結構300。In application, please refer to FIG. 2 , the chip 200 can be electrically connected to the chip pads 112 of the reconfigured circuit structure layer 110 through the solder 210 to form a chip package structure 300 .

綜上所述,在本發明的電路板結構的製作方法中,是透過壓合重配置線路結構層、連接結構層以及增層線路結構層的方式來形成電路板結構,其中重配置線路結構層的第一連接墊分別透過連接結構層的導電膠柱與增層線路結構層的第二連接墊電性連接,且第一連接墊與第二連接墊分別嵌入連接結構層的基材的相對兩表面。藉此,本發明的電路板結構的製作方法無須使用銲點(solder joints)及底膠,可有效地降低電路板結構的製作成本。此外,因為無使用銲料,因此可有效地提高重配置線路結構層、連接結構層以及增層線路結構層之間的接合良率,進而提升本發明的電路板結構的結構可靠度。To sum up, in the manufacturing method of the circuit board structure of the present invention, the circuit board structure is formed by laminating the reconfigured circuit structure layer, the connection structure layer and the build-up circuit structure layer, wherein the circuit board structure layer is reconfigured The first connection pads are electrically connected to the second connection pads of the build-up circuit structure layer through the conductive glue posts of the connection structure layer respectively, and the first connection pads and the second connection pads are respectively embedded in the opposite two sides of the base material of the connection structure layer. surface. Thereby, the method for fabricating the circuit board structure of the present invention does not need to use solder joints and primers, which can effectively reduce the fabrication cost of the circuit board structure. In addition, because no solder is used, the bonding yield between the reconfigured circuit structure layer, the connection structure layer and the build-up circuit structure layer can be effectively improved, thereby improving the structural reliability of the circuit board structure of the present invention.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed above by the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the scope of the appended patent application.

10:暫時基板 12:離形膜 20:絕緣層 30:核心基板 32:核心層 34:第一銅箔層 36:第二銅箔層 110:重配置線路結構層 112:晶片接墊 114:第一介電層 116:重配置線路 118:第二介電層 119:第一連接墊 120:連接結構層 122:基材 125:導電膠柱 130:增層線路結構層 131:表面 132:第二連接墊 140:表面處理層 150:防銲層 200:晶片 210:銲料 300:晶片封裝結構 H1:第一開口 H2:第二開口 M:金屬層 P1、P2:圖案化光阻層 S:種子層 T1:第一導電通孔 T2:第二導電通孔 SP:銲球接墊10: Temporary substrate 12: Release film 20: Insulation layer 30: Core substrate 32: Core layer 34: The first copper foil layer 36: Second copper foil layer 110: Reconfigure the circuit structure layer 112: Chip pads 114: first dielectric layer 116: Reconfiguration line 118: Second Dielectric Layer 119: First connection pad 120: Connecting Structural Layers 122: Substrate 125: Conductive glue column 130: Build-up circuit structure layer 131: Surface 132: Second connection pad 140: Surface treatment layer 150: Solder mask 200: Wafer 210: Solder 300: Chip package structure H1: first opening H2: Second opening M: metal layer P1, P2: patterned photoresist layer S: seed layer T1: first conductive via T2: Second conductive via SP: Solder Ball Pad

圖1A至圖1P是依照本發明的一實施例的一種電路板結構的製作方法的剖面示意圖。 圖2是將晶片配置於圖1P的電路板結構的剖面示意圖。 1A to 1P are schematic cross-sectional views of a method for fabricating a circuit board structure according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of the circuit board structure of FIG. 1P where a wafer is placed.

100:電路板結構 100: Circuit Board Structure

110:重配置線路結構層 110: Reconfigure the circuit structure layer

112:晶片接墊 112: Chip pads

114:第一介電層 114: first dielectric layer

116:重配置線路 116: Reconfiguration line

118:第二介電層 118: Second Dielectric Layer

119:第一連接墊 119: First connection pad

120:連接結構層 120: Connecting Structural Layers

122:基材 122: Substrate

125:導電膠柱 125: Conductive glue column

130:增層線路結構層 130: Build-up circuit structure layer

131:表面 131: Surface

132:第二連接墊 132: Second connection pad

140:表面處理層 140: Surface treatment layer

150:防銲層 150: Solder mask

T1:第一導電通孔 T1: first conductive via

T2:第二導電通孔 T2: Second conductive via

SP:銲球接墊 SP: Solder Ball Pad

Claims (10)

一種電路板結構,包括: 一重配置線路結構層,包括多個第一連接墊; 一增層線路結構層,配置於該重配置線路結構層的一側,且包括多個第二連接墊,其中該重配置線路結構層的線寬與線距小於該增層線路結構層的線寬與線距;以及 一連接結構層,配置於該重配置線路結構層與該增層線路結構層之間,且包括一基材與貫穿該基材的多個導電膠柱,其中該些第一連接墊分別透過該些導電膠柱與該些第二連接墊電性連接,且該些第一連接墊與該些第二連接墊分別嵌入該基材的相對兩表面。 A circuit board structure, comprising: a reconfigured circuit structure layer, including a plurality of first connection pads; A build-up circuit structure layer is disposed on one side of the re-configuration circuit structure layer and includes a plurality of second connection pads, wherein the line width and line spacing of the re-configuration circuit structure layer are smaller than the lines of the build-up circuit structure layer width and line spacing; and A connection structure layer is disposed between the reconfiguration circuit structure layer and the build-up circuit structure layer, and includes a base material and a plurality of conductive glue columns penetrating the base material, wherein the first connection pads pass through the base material respectively. The conductive glue posts are electrically connected to the second connection pads, and the first connection pads and the second connection pads are respectively embedded in two opposite surfaces of the substrate. 如請求項1所述的電路板結構,其中該重配置線路結構層更包括多個介電層、至少一重配置線路、多個導電通孔以及多個晶片接墊,該些介電層與該至少一重配置線路交替配置,該些第一連接墊、該至少一重配置線路以及該些晶片接墊透過該些導電通孔電性連接,該些介電層中位於最外側的是一第一介電層與一第二介電層,該些晶片接墊內埋於該第一介電層內,而該些第一連接墊位於該第二介電層上,且該第二介電層直接接觸該連接結構層的該基材。The circuit board structure of claim 1, wherein the reconfiguration circuit structure layer further comprises a plurality of dielectric layers, at least one reconfiguration circuit, a plurality of conductive vias and a plurality of chip pads, the dielectric layers and the At least one reconfiguration circuit is alternately arranged, the first connection pads, the at least one reconfiguration circuit and the chip pads are electrically connected through the conductive vias, and the outermost of the dielectric layers is a first dielectric layer electric layer and a second dielectric layer, the chip pads are buried in the first dielectric layer, the first connection pads are located on the second dielectric layer, and the second dielectric layer is directly The substrate in contact with the connection structure layer. 如請求項2所述的電路板結構,其中該些介電層的材質包括光敏介電材料或味之素堆積薄膜。The circuit board structure according to claim 2, wherein the materials of the dielectric layers include photosensitive dielectric materials or Ajinomoto build-up films. 如請求項1所述的電路板結構,更包括: 一表面處理層,配置於該重配置線路結構層的該些晶片接墊上,其中該表面處理層的材質包括化鎳鈀浸金、有機保銲劑或無電鍍鎳浸金。 The circuit board structure according to claim 1, further comprising: A surface treatment layer is disposed on the chip pads of the reconfigured circuit structure layer, wherein the material of the surface treatment layer includes nickel palladium immersion gold, organic solder resist or electroless nickel immersion gold. 如請求項1所述的電路板結構,更包括: 一防銲層,配置於該增層線路結構層相對遠離該連接結構層的一表面上,且覆蓋部分該增層線路結構層而定義出多個銲球接墊。 The circuit board structure according to claim 1, further comprising: A solder resist layer is disposed on a surface of the build-up circuit structure layer relatively far from the connection structure layer, and covers part of the build-up circuit structure layer to define a plurality of solder ball pads. 一種電路板結構的製作方法,包括: 提供包括多個第一連接墊的一重配置線路結構層; 提供包括一基材與貫穿該基材的多個導電膠柱的一連接結構層,其中該連接結構層處於一B階段狀態; 提供包括多個第二連接墊的一增層線路結構層,其中該重配置線路結構層的線寬與線距小於該增層線路結構層的線寬與線距;以及 壓合該重配置線路結構層、該連接結構層以及該增層線路結構層,以使該連接結構層位於該重配置線路結構層與該增層線路結構層之間,其中該些第一連接墊分別透過該些導電膠柱與該些第二連接墊電性連接,且該些第一連接墊與該些第二連接墊分別嵌入該基材的相對兩表面,而該連接結構層從該B階段狀態轉變成一C階段狀態。 A manufacturing method of a circuit board structure, comprising: providing a reconfigured circuit structure layer including a plurality of first connection pads; providing a connection structure layer including a base material and a plurality of conductive glue pillars penetrating the base material, wherein the connection structure layer is in a B-stage state; providing a build-up wiring structure layer including a plurality of second connection pads, wherein the line width and line spacing of the reconfigured wiring structure layer are smaller than the line width and line spacing of the build-up wiring structure layer; and Pressing the reconfiguration circuit structure layer, the connection structure layer and the build-up circuit structure layer, so that the connection structure layer is located between the reconfiguration circuit structure layer and the build-up circuit structure layer, wherein the first connections The pads are respectively electrically connected to the second connection pads through the conductive glue posts, and the first connection pads and the second connection pads are respectively embedded in two opposite surfaces of the substrate, and the connection structure layer is formed from the The B-stage state is transformed into a C-stage state. 如請求項6所述的電路板結構的製作方法,其中提供包括該些第一連接墊的該重配置線路結構層的步驟,包括: 提供一暫時基板及位於該暫時基板上的一離形膜; 形成一絕緣層於該離形膜上; 提供一核心基板於該絕緣層上,該核心基板包括一核心層以及位於該核心層相對兩側的一第一銅箔層與一第二銅箔層,該第二銅箔層位於該核心層與該絕緣層之間; 形成多個晶片接墊於該第一銅箔層上; 形成一第一介電層於該第一銅箔層上,該第一介電層覆蓋該些晶片接墊且具有多個第一開口,而該些第一開口暴露出部分該些晶片接墊; 形成至少一重配置線路與多個第一導電通孔,該至少一重配置線路配置於該第一介電層上,而該些第一導電通孔分別位於該些第一開口內且電性連接該至少一重配置線路與該些晶片接墊; 形成一第二介電層於該至少一重配置線路上,該第二介電層具有多個第二開口,該些第二開口暴露出部分該至少一重配置線路; 形成該些第一連接墊與多個第二導電通孔,該些第一連接墊配置於該第二介電層上,而該些第二導電通孔分別位於該些第二開口內且電性連接該至少一重配置線路與該些第一連接墊;以及 移除該暫時基板與該離形膜,而暴露出該絕緣層。 The method for fabricating a circuit board structure as claimed in claim 6, wherein the step of providing the reconfigured circuit structure layer including the first connection pads includes: providing a temporary substrate and a release film on the temporary substrate; forming an insulating layer on the release film; A core substrate is provided on the insulating layer, the core substrate includes a core layer and a first copper foil layer and a second copper foil layer located on opposite sides of the core layer, the second copper foil layer is located in the core layer and the insulating layer; forming a plurality of chip pads on the first copper foil layer; A first dielectric layer is formed on the first copper foil layer, the first dielectric layer covers the chip pads and has a plurality of first openings, and the first openings expose part of the chip pads ; At least one reconfiguration circuit and a plurality of first conductive vias are formed, the at least one reconfiguration circuit is disposed on the first dielectric layer, and the first conductive vias are respectively located in the first openings and electrically connected to the at least one reconfiguration circuit and the chip pads; forming a second dielectric layer on the at least one reconfiguration line, the second dielectric layer has a plurality of second openings, and the second openings expose a part of the at least one reconfiguration line; The first connection pads and a plurality of second conductive vias are formed, the first connection pads are disposed on the second dielectric layer, and the second conductive vias are respectively located in the second openings and electrically sexually connecting the at least one reconfiguration line with the first connection pads; and The temporary substrate and the release film are removed to expose the insulating layer. 如請求項7所述的電路板結構的製作方法,其中該第一介電層的材質與該第二介電層的材質包括光敏介電材料或味之素堆積薄膜。The method for fabricating a circuit board structure as claimed in claim 7, wherein the material of the first dielectric layer and the material of the second dielectric layer include photosensitive dielectric materials or Ajinomoto build-up films. 如請求項7所述的電路板結構的製作方法,其中於壓合該重配置線路結構層、該連接結構層以及該增層線路結構層之後,更包括: 移除該絕緣層與該核心基材,而暴露出該重配置線路結構層的該第一介電層;以及 形成一表面處理層於該重配置線路結構層的該些晶片接墊上,其中該表面處理層的材質包括化鎳鈀浸金、有機保銲劑或無電鍍鎳浸金。 The manufacturing method of a circuit board structure according to claim 7, wherein after pressing the reconfigured circuit structure layer, the connection structure layer and the build-up circuit structure layer, further comprising: removing the insulating layer and the core substrate to expose the first dielectric layer of the reconfiguration circuit structure layer; and A surface treatment layer is formed on the chip pads of the reconfigured circuit structure layer, wherein the material of the surface treatment layer includes nickel palladium immersion gold, organic solder resist or electroless nickel immersion gold. 如請求項6所述的電路板結構的製作方法,其中於壓合該重配置線路結構層、該連接結構層以及該增層線路結構層之前,更包括: 形成一防銲層於該增層線路結構層相對遠離該連接結構層的一表面上,其中該防銲層覆蓋部分該增層線路結構層而定義出多個銲球接墊。 The manufacturing method of the circuit board structure as claimed in claim 6, before pressing the reconfigured circuit structure layer, the connection structure layer and the build-up circuit structure layer, further comprising: A solder resist layer is formed on a surface of the build-up circuit structure layer relatively far from the connection structure layer, wherein the solder resist layer covers part of the build-up circuit structure layer to define a plurality of solder ball pads.
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TWI698972B (en) * 2019-12-16 2020-07-11 欣興電子股份有限公司 Circuit substrate
TWI708541B (en) * 2019-06-06 2020-10-21 欣興電子股份有限公司 Circuit carrier board and manufacturing method thereof

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* Cited by examiner, † Cited by third party
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TWI708541B (en) * 2019-06-06 2020-10-21 欣興電子股份有限公司 Circuit carrier board and manufacturing method thereof
TWI698972B (en) * 2019-12-16 2020-07-11 欣興電子股份有限公司 Circuit substrate

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