TWI762119B - Lead-Free Copper-Free Tin Alloys and Solder Balls for Ball Grid Array Packaging - Google Patents
Lead-Free Copper-Free Tin Alloys and Solder Balls for Ball Grid Array Packaging Download PDFInfo
- Publication number
- TWI762119B TWI762119B TW109146549A TW109146549A TWI762119B TW I762119 B TWI762119 B TW I762119B TW 109146549 A TW109146549 A TW 109146549A TW 109146549 A TW109146549 A TW 109146549A TW I762119 B TWI762119 B TW I762119B
- Authority
- TW
- Taiwan
- Prior art keywords
- free
- lead
- test
- copper
- alloy
- Prior art date
Links
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 88
- 229910001128 Sn alloy Inorganic materials 0.000 title claims abstract description 83
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052709 silver Inorganic materials 0.000 claims abstract description 23
- 239000004332 silver Substances 0.000 claims abstract description 23
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 22
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 21
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 21
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 20
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 20
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 13
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract 3
- 230000008646 thermal stress Effects 0.000 abstract description 7
- 230000035939 shock Effects 0.000 abstract description 6
- 238000012360 testing method Methods 0.000 description 87
- 230000000052 comparative effect Effects 0.000 description 53
- 229910045601 alloy Inorganic materials 0.000 description 45
- 239000000956 alloy Substances 0.000 description 45
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 21
- 238000003466 welding Methods 0.000 description 20
- IYNWNKYVHCVUCJ-UHFFFAOYSA-N bismuth Chemical compound [Bi].[Bi] IYNWNKYVHCVUCJ-UHFFFAOYSA-N 0.000 description 19
- 238000009864 tensile test Methods 0.000 description 19
- 238000005476 soldering Methods 0.000 description 13
- 238000011156 evaluation Methods 0.000 description 12
- 239000010949 copper Substances 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000003064 anti-oxidating effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 230000002950 deficient Effects 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000007655 standard test method Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007542 hardness measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012956 testing procedure Methods 0.000 description 1
Images
Landscapes
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
一種無鉛無銅錫合金,包含3.0~5.0 wt%的銀、0.01~3.5 wt%的鉍、0.01~3.5 wt%的銻、0.005~0.1 wt%的鎳、0.005~0.02 wt%的鍺及餘量的錫。本發明的無鉛無銅錫合金能製成用於球柵陣列封裝的錫球,且由該錫球所形成的焊錫凸塊能承受電子元件本身或環境出現溫度變化時所帶來的熱應力,以及同時具有承受高機械衝擊的能力。A lead-free copper-free tin alloy comprising 3.0-5.0 wt% silver, 0.01-3.5 wt% bismuth, 0.01-3.5 wt% antimony, 0.005-0.1 wt% nickel, 0.005-0.02 wt% germanium and the balance tin. The lead-free copper-free tin alloy of the present invention can be made into tin balls for ball grid array packaging, and the solder bumps formed by the tin balls can withstand the thermal stress brought by the temperature change of the electronic element itself or the environment, as well as the ability to withstand high mechanical shocks at the same time.
Description
本發明是有關於一種錫合金與由該錫合金所製成之用於球柵陣列封裝的錫球,特別是指一種無鉛無銅錫合金與由該無鉛無銅錫合金所製成之用於球柵陣列封裝的錫球。The present invention relates to a tin alloy and tin balls made of the tin alloy for ball grid array packaging, in particular to a lead-free copper-free tin alloy and a tin ball made of the lead-free copper-free tin alloy for Solder balls for ball grid array packages.
隨著半導體元件之I/O數(input/output)的提高,封裝技術由原本只能使用晶片周邊進行封裝的打線結合(wire bonding)演變成至今能使用晶片底部表面進行封裝的球柵陣列(ball grid array;簡稱BGA)封裝,其技術是對半導體元件進行IC焊墊重新佈局(I/O distribution),將焊墊分佈在半導體元件底部從而提高I/O密度。With the increase in the number of I/Os (input/output) of semiconductor devices, packaging technology has evolved from wire bonding (wire bonding) that can only be packaged around the chip to ball grid array (BGA) that can be packaged using the bottom surface of the chip. Ball grid array (BGA for short) packaging, the technology of which is to re-layout the IC pads (I/O distribution) of the semiconductor components, and distribute the pads on the bottom of the semiconductor components to increase the I/O density.
球柵陣列封裝的導通方式可分為金屬凸塊、導電膠及導電膜等,其中又以屬於金屬凸塊技術之焊錫凸塊(solder bump)為主。而球柵陣列封裝又可分為非晶圓級封裝及晶圓級封裝。The conduction methods of the ball grid array package can be divided into metal bumps, conductive adhesives and conductive films, among which solder bumps, which belong to metal bump technology, are the main ones. Ball grid array packaging can be divided into non-wafer level packaging and wafer level packaging.
非晶圓級封裝是指矽晶片透過打線或覆晶(flip chip)的方式焊接在有機基板後,在矽晶片及有機基板之間灌入底部填膠(underfill),然後在有機基板的另一端焊接上錫球形成焊錫凸塊,以形成一電子元件。電子元件將在後續製程中與電路板焊接形成一構裝好的電路板。因為矽晶片、有機基板與電路板之間的膨脹係數差距過大,當構裝好的電路板本身或環境出現溫度變化時,由熱膨脹係數不匹配(mismatch in coefficient of thermal expansion)所帶來的熱應力會造成電子元件與電路板之間的焊點(焊錫凸塊)出現損壞,而有機基板和矽晶片之間的焊點因有底部填膠而通常不會出現損壞。Non-wafer-level packaging means that after the silicon chip is soldered to the organic substrate by wire bonding or flip chip, underfill is poured between the silicon chip and the organic substrate, and then the other end of the organic substrate is filled. Solder the solder balls to form solder bumps to form an electronic component. The electronic components will be soldered to the circuit board in a subsequent process to form an assembled circuit board. Because the difference in expansion coefficient between silicon wafer, organic substrate and circuit board is too large, when the temperature of the assembled circuit board itself or the environment changes, the thermal expansion caused by the mismatch in coefficient of thermal expansion Stress can cause damage to the solder joints (solder bumps) between the electronic components and the circuit board, while the solder joints between the organic substrate and the silicon die are usually not damaged due to the underfill.
晶圓級封裝是指直接在矽晶圓上進行大部分或是全部的封裝測試程序後,再進行切割製成單顆晶片,晶片不通過有機基板,而是直接在晶片上進行IC焊墊重新佈局,然後焊接上錫球,以形成焊錫凸塊。由於封裝後的晶片尺吋與裸晶片幾乎一致,故稱為晶圓級晶片尺吋封裝(wafer level chip scale package;簡稱WLCSP)。然而,由於矽晶片和電路板的膨脹係數差距過大,作為兩者間之連接體的焊點(焊錫凸塊)需能承受電子元件本身或環境出現溫度變化時所帶來的熱應力,此外,因晶圓級封裝多運用在有輕薄短小的行動裝置上,故焊點(焊錫凸塊)也需具有承受高機械衝擊的能力。Wafer-level packaging means that most or all of the packaging and testing procedures are directly performed on the silicon wafer, and then cut into a single chip. The chip does not pass through the organic substrate, but is directly on the chip. layout and then solder balls to form solder bumps. Since the size of the packaged chip is almost the same as that of the bare chip, it is called a wafer level chip scale package (WLCSP for short). However, due to the large difference between the expansion coefficients of the silicon wafer and the circuit board, the solder joints (solder bumps) that serve as the connection between the two must be able to withstand the thermal stress caused by the temperature changes of the electronic components themselves or the environment. In addition, Because wafer-level packaging is mostly used in mobile devices that are thin and short, the solder joints (solder bumps) also need to have the ability to withstand high mechanical shocks.
因此,如何找到一種能製成用於球柵陣列(BGA)封裝之錫球的錫合金,且由該錫球所製得的焊錫凸塊能承受電子元件本身或環境出現溫度變化時所帶來的熱應力,以及同時具有承受高機械衝擊的能力,成為目前致力研究的目標。Therefore, how to find a tin alloy that can be used to make solder balls for ball grid array (BGA) packages, and the solder bumps made from the solder balls can withstand the temperature changes caused by the electronic components themselves or the environment. The thermal stress and the ability to withstand high mechanical shock at the same time have become the target of current research.
因此,本發明之第一目的,即在提供一種無鉛無銅錫合金。該無鉛無銅錫合金能製成用於球柵陣列(BGA)封裝之錫球,且由該錫球所形成的焊錫凸塊能承受電子元件本身或環境出現溫度變化時所帶來的熱應力,以及同時具有承受高機械衝擊的能力。Therefore, the first object of the present invention is to provide a lead-free copper-free tin alloy. The lead-free copper-free tin alloy can be made into solder balls for ball grid array (BGA) packaging, and the solder bumps formed by the solder balls can withstand the thermal stress brought by the temperature change of the electronic component itself or the environment , as well as the ability to withstand high mechanical shocks at the same time.
於是,本發明無鉛無銅錫合金,以該無鉛無銅錫合金的總重為100 wt%計,包含: 3.0~5.0 wt%的銀; 0.01~3.5 wt%的鉍; 0.01~3.5 wt%的銻; 0.005~0.1 wt%的鎳; 0.005~0.02 wt%的鍺;及 餘量的錫。Thus, the lead-free copper-free tin alloy of the present invention, based on the total weight of the lead-free copper-free tin alloy as 100 wt %, comprises: 3.0~5.0 wt% silver; 0.01~3.5 wt% of bismuth; 0.01~3.5 wt% of antimony; 0.005~0.1 wt% nickel; 0.005 to 0.02 wt% germanium; and balance of tin.
因此,本發明之第二目的,即在提供一種用於球柵陣列封裝的錫球。由該錫球所形成的焊錫凸塊能承受電子元件本身或環境出現溫度變化時所帶來的熱應力,以及同時具有承受高機械衝擊的能力。Therefore, the second object of the present invention is to provide a solder ball for ball grid array packaging. The solder bumps formed by the solder balls can withstand the thermal stress brought by the temperature change of the electronic component itself or the environment, and at the same time have the ability to withstand high mechanical impact.
於是,本發明用於球柵陣列封裝的錫球,是由前述的無鉛無銅錫合金所製成。Therefore, the solder balls used in the ball grid array package of the present invention are made of the aforementioned lead-free and copper-free tin alloys.
本發明之功效在於:由於本發明的無鉛無銅錫合金同時包含3.0~5.0 wt%的銀、0.01~3.5 wt%的鉍、0.01~3.5 wt%的銻、0.005~0.1 wt%的鎳、0.005~0.02 wt%的鍺及餘量的錫。因此,本發明的無鉛無銅錫合金能製成用於球柵陣列(BGA)封裝之錫球,且由該錫球所形成之焊錫凸塊能承受電子元件本身或環境出現溫度變化時所帶來的熱應力,以及同時具有承受高機械衝擊的能力。The effect of the present invention is as follows: since the lead-free copper-free tin alloy of the present invention simultaneously contains 3.0-5.0 wt% silver, 0.01-3.5 wt% bismuth, 0.01-3.5 wt% antimony, 0.005-0.1 wt% nickel, 0.005 wt% ~0.02 wt% germanium and balance tin. Therefore, the lead-free copper-free tin alloy of the present invention can be made into solder balls for ball grid array (BGA) packaging, and the solder bumps formed by the solder balls can withstand the temperature changes of the electronic components themselves or the environment. thermal stress, and at the same time have the ability to withstand high mechanical shock.
以下將就本發明內容進行詳細說明:The content of the present invention will be described in detail below:
本發明的無鉛無銅錫合金,以該無鉛無銅錫合金的總重為100 wt%計,包含3.0~5.0 wt%的銀、0.01~3.5 wt%的鉍、0.01~3.5 wt%的銻、0.005~0.1 wt%的鎳、0.005~0.02 wt%的鍺,及餘量的錫。The lead-free copper-free tin alloy of the present invention, based on the total weight of the lead-free copper-free tin alloy as 100 wt %, comprises 3.0-5.0 wt % of silver, 0.01-3.5 wt % of bismuth, 0.01-3.5 wt % of antimony, 0.005~0.1 wt% nickel, 0.005~0.02 wt% germanium, and balance tin.
需先說明的是,本發明的無鉛無銅錫合金實質上不包含鉛(Pb)與銅(Cu)。前述實質上不包含鉛與銅是指原則上只要非蓄意在錫合金中添加鉛與銅者,例如於製造過程中無意但不可避免的雜質或接觸,因此,基於本發明主旨即可被視為實質上不包含鉛與銅,或可視為無鉛與無銅。wt%指的是重量百分比,本文以下wt%同指重量百分比。另外,本發明及專利範圍所述之數值範圍的限定總是包括端值。It should be noted that the lead-free copper-free tin alloy of the present invention does not substantially contain lead (Pb) and copper (Cu). The aforementioned not substantially containing lead and copper means that in principle, as long as lead and copper are not intentionally added to the tin alloy, such as unintentional but unavoidable impurities or contact during the manufacturing process, therefore, based on the gist of the present invention, it can be regarded as Essentially free of lead and copper, or considered lead and copper free. wt% refers to the weight percentage, and the following wt% refers to the weight percentage. Additionally, the limits of numerical ranges recited in the present and patent claims are always inclusive of the endpoints.
此外,「餘量的錫」的用語為了避免誤解,不應被理解為排除其它於製造過程中無意但不可避免的雜質。因此,若假設雜質存在時,「餘量的錫」應被理解為補足該無鉛無銅錫合金至100 wt%的重量百分比例且是由錫加上不可避免的雜質所組成。In addition, the term "residual tin" should not be understood to exclude other unintentional but unavoidable impurities in the manufacturing process in order to avoid misunderstanding. Therefore, if it is assumed that impurities are present, "the balance of tin" should be understood to make up the weight percent of the lead-free copper-free tin alloy to 100 wt% and consist of tin plus inevitable impurities.
較佳地,該無鉛無銅錫合金包含3.5~4.5 wt%的銀。更佳地,該無鉛無銅錫合金包含3.75~4.25 wt%的銀。Preferably, the lead-free copper-free tin alloy contains 3.5-4.5 wt% silver. More preferably, the lead-free copper-free tin alloy contains 3.75-4.25 wt% silver.
較佳地,該無鉛無銅錫合金包含2.5~3.5 wt%的鉍。更佳地,該無鉛無銅錫合金包含2.75~3.25 wt%的鉍。Preferably, the lead-free copper-free tin alloy contains 2.5-3.5 wt% bismuth. More preferably, the lead-free copper-free tin alloy contains 2.75-3.25 wt% bismuth.
較佳地,該無鉛無銅錫合金包含0.5~1.5 wt%的銻。更佳地,該無鉛無銅錫合金包含0.75~1.25 wt%的銻。Preferably, the lead-free copper-free tin alloy contains 0.5-1.5 wt % of antimony. More preferably, the lead-free copper-free tin alloy contains 0.75-1.25 wt % of antimony.
較佳地,該無鉛無銅錫合金包含0.045~0.055 wt%的鎳。更佳地,該無鉛無銅錫合金包含0.0475~0.0525 wt%的鎳。Preferably, the lead-free copper-free tin alloy contains 0.045-0.055 wt% nickel. More preferably, the lead-free copper-free tin alloy contains 0.0475-0.0525 wt% nickel.
較佳地,該無鉛無銅錫合金包含0.005~0.015 wt%的鍺。更佳地,該無鉛無銅錫合金包含0.0075~0.0125 wt%的鍺。Preferably, the lead-free copper-free tin alloy contains 0.005-0.015 wt% germanium. More preferably, the lead-free copper-free tin alloy contains 0.0075-0.0125 wt% germanium.
<< 實施例Example 1~111~11 與比較例with the comparative example 1~101~10 >>
製備無鉛無銅錫合金Preparation of lead-free copper-free tin alloys
實施例1~11與比較例1~10的無鉛無銅錫合金是依據下表1所示的金屬成分與重量百分比(wt%),以及下列步驟所製得:The lead-free and copper-free tin alloys of Examples 1 to 11 and Comparative Examples 1 to 10 are prepared according to the metal composition and weight percent (wt%) shown in Table 1 below, and the following steps:
步驟 (1) : 依據對應的金屬成分及重量百分比,準備對應的金屬材料。 Step (1) : Prepare corresponding metal materials according to corresponding metal components and weight percentages.
步驟 (2) :
將已經準備好的金屬材料加熱熔化及鑄造,形成實施例1~11與比較例1~10的無鉛無銅錫合金。
表1
<< 合金性質測試Alloy property test >>
先說明的是,實施例與比較例的該無鉛無銅錫合金是藉由推力測試(ball shear test)評估焊接性;藉由硬度測試(hardness test)評估合金硬度;藉由拉伸測試(tensile test)評估合金延展性;藉由板階焊接測試(board level soldering test)評估抗氧化特性;藉由冷熱循環測試(thermal cycle test)評估焊點及接合結構對熱疲勞的抵抗能力。First of all, for the lead-free, copper-free and tin alloys of the examples and comparative examples, the solderability is evaluated by ball shear test; the hardness of the alloy is evaluated by hardness test; Test) to evaluate alloy ductility; to evaluate oxidation resistance by board level soldering test; to evaluate resistance of solder joints and joint structures to thermal fatigue by thermal cycle test.
推力測試、硬度測試、拉伸測試、板階焊接測試及冷熱循環測試的測試方法如下:The test methods for thrust test, hardness test, tensile test, plate step welding test and thermal cycle test are as follows:
[[ 推力測試thrust test ]]
參照JESD22-B117B標準測試方法,進行實施例與比較例之無鉛無銅錫合金的推力測試。首先於尺寸為14 mm×14 mm的BGA元件上塗佈助焊劑,然後以球徑為0.45 mm的實施例或比較例之無鉛無銅錫合金所製成的錫球,於BGA元件上進行植球作業(ball attach)。BGA元件的焊盤表面處理為裸銅,使用峰值溫度為240℃的迴焊曲線(reflow profile)進行焊接,完成後錫球會焊接於BGA元件上形成焊錫凸塊,然後以推力測試機進行焊錫凸塊之推力測試(推刀移動速度為100 μm/s)。Referring to the JESD22-B117B standard test method, the thrust test of the lead-free, copper-free and tin alloys of the Examples and Comparative Examples was carried out. First, apply flux on BGA components with a size of 14 mm × 14 mm, and then use solder balls made of lead-free and copper-free tin alloys of the embodiment or comparative example with a ball diameter of 0.45 mm to implant on the BGA components. Ball attach. The surface of the pad of the BGA component is treated as bare copper, and the soldering is performed using a reflow profile with a peak temperature of 240°C. After completion, the solder balls will be soldered to the BGA components to form solder bumps, and then soldered with a thrust tester. The thrust test of the bump (the moving speed of the pusher is 100 μm/s).
每組合金BGA樣本推15顆焊錫凸塊並記錄其推力強度,將15顆焊錫凸塊的推力強度取平均值為實驗結果,結果判定標準為:平均推力強度超過15牛頓則判定為植球焊接性良好並標示為「○」,平均推力強度介於12~15牛頓之間則判定為植球焊接性可接受並標示為「△」,平均推力強度小於12牛頓則判定為植球焊接性不足並標示為「X」。實施例與比較例之無鉛無銅錫合金的推力測試結果整理於表1中。Push 15 solder bumps for each combination of gold BGA samples and record their thrust strength. The average thrust strength of the 15 solder bumps is taken as the experimental result. The result judgment standard is: the average thrust strength exceeds 15 Newtons and it is judged as ball-mounting welding If the average thrust strength is between 12 and 15N, it is judged as acceptable and marked as "△". If the average thrust strength is less than 12N, it is judged as insufficient ball mount weldability. and marked with an "X". The thrust test results of the lead-free and copper-free tin alloys of the Examples and Comparative Examples are summarized in Table 1.
[[ 硬度測試Hardness Testing ]]
參照ASTM-E92-17標準測試方法進行,使用維氏硬度測量儀量測實施例與比較例之無鉛無銅錫合金的硬度。測試方法是將各合金製作為長20 mm、寬20 mm及高10 mm平的板形樣本,樣品的測試表面需先經過研磨拋光處理,接著以維氏硬度測量儀之標準測試壓頭對樣本進行壓痕測試(壓載條件為荷重500 g,荷重持續時間10秒),再經由合金樣本留下的壓痕尺寸計算出合金之硬度結果。According to the ASTM-E92-17 standard test method, the hardness of the lead-free and copper-free tin alloys of the examples and the comparative examples was measured by using a Vickers hardness tester. The test method is to make each alloy into a flat plate-shaped sample with a length of 20 mm, a width of 20 mm and a height of 10 mm. Carry out indentation test (ballast condition: load 500 g, load duration 10 seconds), and then calculate the hardness of the alloy through the size of the indentation left by the alloy sample.
本測試中各合金進行三個硬度樣本的測試,再將所得三個硬度結果取平均值,判定標準為:平均硬度大於25 Hv則判定為合金具備良好硬度表現並標示為「○」,平均硬度介於22~25 Hv之間則判定為合金硬度表現可接受並標示為「△」,平均硬度小於22 Hv則判定為合金硬度表現不佳並標示為「X」。實施例與比較例之無鉛無銅錫合金的硬度測試結果整理於表1中。In this test, three hardness samples were tested for each alloy, and then the three hardness results obtained were averaged. The judgment standard was: if the average hardness was greater than 25 Hv, the alloy was judged to have good hardness performance and was marked as "○", and the average hardness When the hardness is between 22 and 25 Hv, it is judged that the hardness of the alloy is acceptable and marked as "△", and the average hardness is less than 22 Hv, the hardness of the alloy is judged to be poor and marked as "X". The hardness test results of the lead-free and copper-free tin alloys of the Examples and Comparative Examples are summarized in Table 1.
[[ 拉伸測試tensile test ]]
參照ASTM-E8/E8M-16a,進行實施例與比較例之無鉛無銅錫合金的拉伸測試。拉伸速率為6 mm/min,以拉伸測試之伸長率結果比較合金的延展率。With reference to ASTM-E8/E8M-16a, the tensile test of the lead-free and copper-free tin alloys of the Examples and Comparative Examples was carried out. The tensile rate was 6 mm/min, and the elongation of the alloys was compared with the elongation results of the tensile test.
本測試中各合金進行三個拉伸樣本的測試,再將所得三個伸長率結果取平均值,結果判定標準為:平均伸長率大於20%則判定為合金具備良好延展性並標示為「○」,平均伸長率介於17~20%之間則判定為合金延展性可接受並標示為「△」,平均伸長率小於17%則判定為合金延展性不佳並標示為「X」。實施例與比較例之無鉛無銅錫合金的拉伸測試結果整理於表1中。In this test, three tensile samples were tested for each alloy, and then the three elongation results obtained were averaged. The result judgment standard was: if the average elongation was greater than 20%, the alloy was judged to have good ductility and was marked as "○" ”, if the average elongation is between 17% and 20%, it is judged that the alloy has acceptable ductility and is marked as “△”; if the average elongation is less than 17%, it is judged that the alloy has poor ductility and is marked as “X”. The tensile test results of the lead-free and copper-free tin alloys of the Examples and Comparative Examples are summarized in Table 1.
[[ 板階焊接測試Board Step Soldering Test ]]
首先於尺寸為35 mm×35 mm的BGA元件上塗佈助焊劑,然後以球徑為0.63 mm的實施例或比較例之無鉛無銅錫合金所製成的錫球,於BGA元件上進行植球作業(ball attach)。BGA元件的焊盤表面處理為裸銅,使用峰值溫度為240℃的迴焊曲線(reflow profile)進行焊接,完成後錫球會焊接於BGA元件上形成焊錫凸塊,然後將樣品在溫度85℃及相對濕度85%的環境下放置240小時加速焊錫凸塊的氧化,再將BGA元件焊接於相對應的電路板上,電路板的焊盤表面處理為有機保焊膜(organic solderability preservative;簡稱 OSP)。本測試目的是測試以實施例或比較例之無鉛無銅錫合金所製成的錫球於BGA元件形成焊錫凸塊後的抗氧化能力。合金的抗氧化能力會影響其焊錫凸塊與電路板焊接時的焊接性,若合金抗氧化能力不足而使得焊錫凸塊與電路板焊接時的焊接性不佳則會增加板階製程後發生焊接不良的發生率。First, apply flux on BGA components with a size of 35 mm × 35 mm, and then use solder balls made of lead-free and copper-free tin alloys of the embodiment or comparative example with a ball diameter of 0.63 mm to implant on the BGA components. Ball attach. The surface of the pad of the BGA component is treated as bare copper, and the soldering is performed using a reflow profile with a peak temperature of 240°C. After completion, the solder balls will be soldered to the BGA component to form solder bumps, and then the sample is placed at a temperature of 85°C. and the relative humidity of 85% for 240 hours to accelerate the oxidation of solder bumps, and then solder the BGA components to the corresponding circuit boards. The surface of the pads of the circuit board is treated with organic solderability preservative (OSP for short). ). The purpose of this test is to test the oxidation resistance of the solder balls made of the lead-free and copper-free tin alloys of the examples or comparative examples after forming solder bumps on BGA components. The oxidation resistance of the alloy will affect the solderability of the solder bumps and the circuit board. If the oxidation resistance of the alloy is insufficient, the solderability of the solder bumps and the circuit board will be poor, which will increase the soldering defects after the board step process. incidence rate.
本測試針對板階後樣本進行X-ray分析焊接不良的比例,判定標準為焊接不良發生比例小於10%則判定為板階焊接性良好並標示為「○」,焊接不良發生比例介於10~20%則判定為板階焊接性可接受並標示為「△」,焊接不良發生比例大於20%則判定為板階焊接性失敗並標示為「X」。實施例與比較例之無鉛無銅錫合金的板階焊接測試結果整理於表1中。In this test, X-ray analysis is performed on the samples after the plate step to analyze the proportion of poor welding. The judgment standard is that the proportion of poor welding is less than 10%. The plate is judged to have good weldability and is marked as "○", and the proportion of poor welding is between 10~ 20% is judged to be acceptable in stage weldability and marked as “△”, and if the proportion of poor welding is greater than 20%, it is judged as stage weldability failure and marked as “X”. The board-level soldering test results of the lead-free copper-free tin alloys of the examples and comparative examples are summarized in Table 1.
[[ 冷熱循環測試Hot and cold cycle test ]]
參照JESD22-A104E,進行進行實施例與比較例之無鉛無銅錫合金的冷熱循環測試。首先於尺寸為14 mm×14 mm的BGA元件上塗佈助焊劑,然後以球徑為0.45 mm的實施例或比較例之無鉛無銅錫合金所製成的錫球,於BGA元件上進行植球作業(ball attach)。BGA元件的焊盤表面處理為裸銅,使用峰值溫度為240℃的迴焊曲線(reflow profile)進行焊接,完成後錫球會焊接於BGA元件上形成焊錫凸塊,再將BGA元件焊接於相對應的電路板上,電路板的焊盤表面處理為有機保焊膜(OSP),然後對焊接好的電路板進行冷熱循環測試(測試條件為‒40~125℃,升、降溫速率為15 ℃/min,持溫時間為10分鐘,共進行1000循環)。冷熱循環測試進行前對針對各焊接好的電路板樣本測量電阻(初始電阻值),冷熱循環測試後再測試一次電阻(測試後電阻值)。本測試目是測試實施例或比較例之無鉛無銅錫合金錫球植球後所形成之焊錫凸塊以及焊錫凸塊與銅基材接合結構之熱疲勞抗性,若焊錫凸塊本身及對銅基材接合結構的熱疲勞抗性不足,則會導致焊點或接合結構於反覆冷熱循環應力下產生熱疲勞破壞,進而影響焊點可靠度。With reference to JESD22-A104E, the cold-heat cycle test of the lead-free copper-free tin alloys of the examples and comparative examples was carried out. First, apply flux on BGA components with a size of 14 mm × 14 mm, and then use solder balls made of lead-free and copper-free tin alloys of the embodiment or comparative example with a ball diameter of 0.45 mm to implant on the BGA components. Ball attach. The surface of the pads of the BGA components is treated as bare copper, and the soldering is performed using a reflow profile with a peak temperature of 240°C. After completion, the solder balls will be soldered to the BGA components to form solder bumps, and then the BGA components will be soldered to the phase. On the corresponding circuit board, the surface of the pad of the circuit board is treated with organic solder protection film (OSP). /min, the holding time is 10 minutes, and a total of 1000 cycles are performed). The resistance (initial resistance value) of each soldered circuit board sample is measured before the cold and heat cycle test, and the resistance is measured again after the cold and heat cycle test (the resistance value after the test). The purpose of this test is to test the thermal fatigue resistance of the solder bumps formed after the lead-free copper-free tin alloy solder balls of the examples or the comparative examples and the joint structure of the solder bumps and the copper substrate. Insufficient thermal fatigue resistance of the copper-substrate bonding structure will lead to thermal fatigue failure of the solder joint or the joint structure under repeated cold-heat cycle stress, thereby affecting the reliability of the solder joint.
本測試對冷熱循環後的電路板樣本進行電阻檢測,藉由比較樣本進行冷熱循環測試後的電阻變化評判焊錫凸塊及接合結構的熱疲勞抗性,電阻變化的定義為電阻變化值(測試後電阻值減去初始電阻值)與初始電阻值的比值。判定標準為:電阻變化低於10%則判定為合金焊點及接合結構的熱疲勞抗性良好並標示為「○」,電阻變化介於10~20%則判定為合金焊點及接合結構的熱疲勞抗性可接受並標示為「△」,電阻變化大於20%則判定為合金焊點及接合結構的熱疲勞抗性不佳並標示為「X」。In this test, the resistance of the circuit board samples after the cold and heat cycle is tested, and the thermal fatigue resistance of the solder bumps and the bonding structure is judged by comparing the resistance change of the samples after the cold and heat cycle test. The resistance change is defined as the resistance change value (after the test The ratio of the resistance value minus the initial resistance value) to the initial resistance value. Judgment criteria are: if the resistance change is less than 10%, it is judged that the thermal fatigue resistance of the alloy solder joint and the joint structure is good and marked as "○", and the resistance change is 10~20%, it is judged that the alloy solder joint and the joint structure have good thermal fatigue resistance. The thermal fatigue resistance is acceptable and marked as "△", and the resistance change is greater than 20%, it is judged that the thermal fatigue resistance of the alloy solder joint and the joint structure is not good and marked as "X".
針對圖1至3的說明如下:圖1的相片為實施例1所形成之正常焊點(焊錫凸塊)的切片,圖2的相片為比較例9所形成之不良焊點(焊錫凸塊)的切片,圖3的相片則為比較例9所形成之不良焊點(焊錫凸塊)的x-ray觀察結果。1 to 3 are as follows: the photo of FIG. 1 is a slice of a normal solder joint (solder bump) formed in Example 1, and the photo of FIG. 2 is a bad solder joint (solder bump) formed in Comparative Example 9 , the photo in FIG. 3 is the x-ray observation result of the defective solder joints (solder bumps) formed in Comparative Example 9.
另外說明的是,將同一實施例或同一比較例進行前述推力測試、硬度測試、拉伸測試、板階焊接測試及冷熱循環測試的五個測試,如果測試結果中出現任一個「X」,則於表1中「整體評核結果」欄位標示為「X」,代表此實施例或比較例不符合本發明的要求;如果測試結果中出現任一個「△」,則於表1中「整體評核結果」欄位標示為「△」,代表此實施例或比較例符合本發明的要求;如果全部測試結果中皆出現「○」,則於表1中「整體評核結果」欄位標示為「○」,代表此實施例不僅符合本發明的要求且為最佳實施例。In addition, it should be noted that the same embodiment or the same comparative example is subjected to the aforementioned five tests of thrust test, hardness test, tensile test, plate step welding test and cold-heat cycle test. If any "X" appears in the test results, then In Table 1, the column of "Overall Evaluation Result" is marked with "X", which means that this Example or Comparative Example does not meet the requirements of the present invention; The column of "Assessment Results" is marked with "△", which means that this example or the comparative example meets the requirements of the present invention; if "○" appears in all the test results, it is marked in the column of "Overall Assessment Results" in Table 1. "○" means that this embodiment not only meets the requirements of the present invention but also is the best embodiment.
<< 合金性質測試結果與討論Alloy property test results and discussion >>
以下分別依據不同的銀含量、不同的鉍含量、不同的銻含量、不同的鎳含量,以及不同的鍺含量所得的結果分別進行討論。In the following, the results obtained with different silver contents, different bismuth contents, different antimony contents, different nickel contents, and different germanium contents are discussed respectively.
[ 不同銀含量 ]
表2(節錄自表1)
由表2可知,銀之重量百分比會影響合金硬度、其形成焊接後焊點及接合界面熱疲勞抗性與抗氧化特性,錫球抗氧化特性不足則會提高植球元件進行板階製程時發生雙球不良的機率。過低的銀之重量百分比會使得無鉛無銅錫合金無法通過硬度測試及冷熱循環測試。過高的銀之重量百分比雖然會有較高的合金硬度,但會導致無鉛無銅錫合金熔點上升及延展性下降,熔點上升會導致其在等同的溫度條件下進行植球焊接的焊接性變差,使得其無法通過推力測試,而合金延展性下降也會使其無法通過拉伸測試;此外,過高的銀之重量百分比還會導致無鉛無銅錫合金無法通過冷熱循環測試及板階焊接測試。It can be seen from Table 2 that the weight percentage of silver will affect the hardness of the alloy, the thermal fatigue resistance and oxidation resistance of the solder joints after soldering and the joint interface, and the insufficient oxidation resistance of the solder ball will increase the occurrence of the ball-mounted components in the board-level process. Chances of bad double balls. Too low weight percentage of silver will make the lead-free copper-free tin alloy fail to pass the hardness test and thermal cycle test. Although the weight percentage of silver is too high, it will have higher alloy hardness, but it will lead to the increase of melting point and the decrease of ductility of lead-free and copper-free tin alloy. poor, making it impossible to pass the thrust test, and the reduced ductility of the alloy will also make it impossible to pass the tensile test; in addition, the excessive weight percentage of silver will also cause the lead-free copper-free tin alloy to fail the cold-heat cycle test and board level welding. test.
比較例1採用2.0 wt%的銀,其於硬度測試及冷熱循環測試標示為「X」,表示過低重量百分比(小於3.0 wt%)的銀會導致合金硬度表現與合金焊點及接合界面熱疲勞抗性不佳;比較例2採用6.0 wt%的銀,其於硬度測試雖然標示為「○」,然而於推力測試、拉伸測試、冷熱循環測試、板階焊接測試及「整體評核結果」欄位中的卻被標示為「X」,代表過量重量百分比(大於5.0 wt%)的銀會導致合金之焊點及接合界面熱疲勞抗性不佳與抗氧化特性不足,且無法通過推力測試及拉伸測試;實施例2採用3.0 wt%的銀、實施例1採用4.0 wt%的銀、實施例3採用5.0 wt%的銀,其於表2「整體評核結果」欄位皆標示為「△」或「○」,代表無鉛無銅錫合金中包含3.0~5.0 wt%的銀能符合本發明的要求。Comparative Example 1 uses 2.0 wt% silver, which is marked as “X” in the hardness test and cold-heat cycle test, indicating that too low weight percentage (less than 3.0 wt%) of silver will cause alloy hardness performance and alloy solder joints and joint interface heat. The fatigue resistance is not good; Comparative Example 2 uses 6.0 wt% silver, although it is marked as "○" in the hardness test, but in the thrust test, tensile test, cold and heat cycle test, plate step welding test and "overall evaluation results" ” column is marked as “X”, which means that excessive weight percentage (greater than 5.0 wt%) of silver will lead to poor thermal fatigue resistance and insufficient oxidation resistance of solder joints and joint interfaces of the alloy, and cannot pass thrust Test and tensile test; Example 2 uses 3.0 wt% silver, Example 1 uses 4.0 wt% silver, and Example 3 uses 5.0 wt% silver, which are indicated in the "Overall Evaluation Results" column of Table 2 "△" or "○" means that the lead-free copper-free tin alloy containing 3.0-5.0 wt% silver can meet the requirements of the present invention.
[ 不同鉍含量 ]
表3(節錄自表1)
由表3可知,鉍之重量百分比會影響合金硬度與其形成焊接後焊點及接合界面熱疲勞抗性。過低的鉍之重量百分比會使得無鉛無銅錫合金無法通過硬度測試及冷熱循環測試;過高的鉍之重量百分比雖然會有較高的合金硬度,但會導致無鉛無銅錫合金的延展性下降而無法通過拉伸測試。It can be seen from Table 3 that the weight percentage of bismuth will affect the hardness of the alloy and the thermal fatigue resistance of the solder joint after welding and the joint interface. Too low weight percentage of bismuth will make the lead-free copper-free tin alloy fail to pass the hardness test and thermal cycle test; too high weight percentage of bismuth will have higher alloy hardness, but will lead to the ductility of lead-free copper-free tin alloy fell and failed the tensile test.
比較例3採用0 wt%的鉍,其於硬度測試及冷熱循環測試標示為「X」,表示過低重量百分比(小於0.01 wt%)的鉍會導致合金硬度表現與合金焊點及接合界面熱疲勞抗性不佳;比較例4採用4.0wt%的鉍,其於硬度測試雖然標示為「○」,然而於拉伸測試及「整體評核結果」欄位中的卻被標示為「X」,代表過量重量百分比(大於3.5 wt%)的鉍會導致合金無法通過拉伸測試;實施例4採用0.01 wt%的鉍、實施例1採用3.0 wt%的鉍、實施例5採用3.5 wt%的鉍,其於表3中「整體評核結果」欄位皆標示為「△」或「○」,代表無鉛無銅錫合金中包含0.01~3.5 wt%的鉍能符合本發明的要求。Comparative example 3 uses 0 wt% bismuth, which is marked as "X" in the hardness test and the cold-heat cycle test, indicating that a too low weight percentage (less than 0.01 wt%) of bismuth will cause the alloy hardness performance and alloy solder joints and joint interface heat. The fatigue resistance is not good; Comparative Example 4 uses 4.0wt% bismuth, although it is marked as "○" in the hardness test, but it is marked as "X" in the tensile test and "Overall Evaluation Results" column , the bismuth representing excess weight percentage (greater than 3.5 wt%) will cause the alloy to fail the tensile test; Example 4 adopts 0.01 wt% bismuth, Example 1 adopts 3.0 wt% bismuth, and Example 5 adopts 3.5 wt% bismuth Bismuth, which is marked as "△" or "○" in the column "Overall Evaluation Result" in Table 3, represents that the bismuth containing 0.01 to 3.5 wt% in the lead-free copper-free tin alloy can meet the requirements of the present invention.
[ 不同銻含量 ]
表4(節錄自表1)
由表4可知,銻之重量百分比會影響合金硬度、其形成焊接後焊點及接合界面熱疲勞抗性與抗氧化特性,錫球抗氧化特性不足則會提高植球元件進行板階製程時發生雙球不良的機率。過低的銻之重量百分比會使得無鉛無銅錫合金無法通過硬度測試及冷熱循環測試。過高的銻之重量百分比雖然會有較高的合金硬度,但會導致無鉛無銅錫合金熔點上升及延展性下降,熔點上升會導致其在等同的溫度條件下進行植球焊接的焊接性變差,使得其無法通過推力測試,而合金延展性下降也會使得其無法通過拉伸測試;此外,過高的銀之重量百分比還會導致無鉛無銅錫合金無法通過板階焊接測試。It can be seen from Table 4 that the weight percentage of antimony will affect the hardness of the alloy, the thermal fatigue resistance and anti-oxidation properties of the solder joints after soldering and the joint interface. Chances of bad double balls. Too low antimony weight percentage will make the lead-free copper-free tin alloy fail to pass the hardness test and the thermal cycle test. Excessive weight percentage of antimony will have higher alloy hardness, but it will lead to the increase of melting point and the decrease of ductility of lead-free and copper-free tin alloy. The poor ductility of the alloy makes it impossible to pass the thrust test, and the ductility of the alloy also makes it impossible to pass the tensile test; in addition, the excessive weight percentage of silver will also cause the lead-free copper-free tin alloy to fail the board step soldering test.
比較例5採用0 wt%的銻,其於硬度測試標示為「X」,表示過低重量百分比(小於0.01 wt%)的銻會導致合金硬度表現與合金焊點及接合界面熱疲勞抗性不佳;比較例6採用4.0 wt%的銻,其於硬度測試雖然標示為「○」,然而於推力測試、拉伸測試、板階焊接測試及「整體評核結果」欄位中的卻被標示為「X」,代表過量重量百分比(大於3.5 wt%)的銻會導致合金抗氧化特性不足,且無法通過推力測試及拉伸測試;實施例6採用0.01wt%的銻、實施例1採用1.0wt%的銻、實施例7採用3.5wt%的銻,其於表4中「整體評核結果」欄位皆標示為「△」或「○」,代表無鉛無銅錫合金中包含0.01~3.5 wt%的銻能符合本發明的要求。Comparative Example 5 uses 0 wt% of antimony, which is marked as "X" in the hardness test, indicating that too low wt% (less than 0.01 wt%) of antimony will cause the alloy hardness performance to be inconsistent with the thermal fatigue resistance of alloy solder joints and joint interfaces. Good; Comparative Example 6 uses 4.0 wt% antimony, although it is marked as "○" in the hardness test, but it is marked in the thrust test, tensile test, plate welding test and "overall evaluation result" column "X" means that the antimony in excess weight percentage (greater than 3.5 wt%) will lead to insufficient anti-oxidation properties of the alloy, and it cannot pass the thrust test and tensile test; wt% of antimony, Example 7 uses 3.5wt% of antimony, which are marked as "△" or "○" in the "Overall Evaluation Results" column in Table 4, indicating that the lead-free copper-free tin alloy contains 0.01~3.5 wt% of antimony can meet the requirements of the present invention.
[ 不同鎳含量 ]
表5(節錄自表1)
由表5可知,鎳之重量百分比會影響其形成焊接後焊點及接合界面熱疲勞抗性。過低的鎳之重量百分比會使得無鉛無銅錫合金無法通過冷熱循環測試;過高的鎳之重量百分比雖然會有較好的焊點及接合界面熱疲勞抗性,但會導致無鉛無銅錫合金的延展性下降使得其無法通過拉伸測試。It can be seen from Table 5 that the weight percentage of nickel will affect the thermal fatigue resistance of the solder joint after welding and the joint interface. Too low nickel weight percentage will make lead-free copper-free tin alloys fail to pass the thermal cycle test; too high nickel weight percentage will have better thermal fatigue resistance of solder joints and joint interfaces, but will lead to lead-free copper-free tin alloys. The ductility of the alloy decreased so that it could not pass the tensile test.
比較例7採用0 wt%的鎳,其於冷熱循環測試標示為「X」,表示過低重量百分比(小於0.005 wt%)的鎳會導致合金焊點及接合界面熱疲勞抗性不佳;比較例8採用0.2 wt%的鎳,其於冷熱循環測試雖然標示為「○」,然而於拉伸測試及「整體評核結果」欄位中的卻被標示為「X」,代表過量重量百分比(大於0.1 wt%)的鎳會導致合金無法通過拉伸測試;實施例8採用0.005 wt%的鎳、實施例1採用0.05 wt%的鎳、實施例9採用0.1 wt%的鎳,其於表5中「整體評核結果」欄位皆標示為「△」或「○」,代表無鉛無銅錫合金中包含0.005~0.1 wt%的鎳能符合本發明的要求。Comparative example 7 uses 0 wt% nickel, which is marked as "X" in the cold-heat cycle test, indicating that too low weight percentage (less than 0.005 wt%) of nickel will lead to poor thermal fatigue resistance of alloy solder joints and joint interfaces; comparison Example 8 uses 0.2 wt% nickel, although it is marked as "○" in the cooling and heating cycle test, but it is marked as "X" in the tensile test and "overall evaluation results" column, which represents the excess weight percentage ( greater than 0.1 wt%) nickel would cause the alloy to fail the tensile test; Example 8 used 0.005 wt% nickel, Example 1 used 0.05 wt% nickel, and Example 9 used 0.1 wt% nickel, as shown in Table 5 The columns of "Overall Evaluation Result" are marked with "△" or "○", which means that the lead-free copper-free tin alloy containing 0.005-0.1 wt% nickel can meet the requirements of the present invention.
[ 不同鍺含量 ]
表6(節錄自表1)
由表6可知,鍺之重量百分比會影響合金的抗氧化特性,錫球抗氧化特性不足則會提高植球元件進行板階製程時發生雙球不良的機率。過低的鍺之重量百分比會使得無鉛無銅錫合金無法通過板階焊接測試;過高的鍺之重量百分比會導致無鉛無銅錫合金的焊接性下降使得其無法通過推力測試,且同樣會使其無法通過板階焊接測試。It can be seen from Table 6 that the weight percentage of germanium will affect the anti-oxidation properties of the alloy, and the insufficient anti-oxidation properties of the solder balls will increase the probability of double-ball defects during the board-level process of the ball-mounted components. Too low weight percent of germanium will make the lead-free copper-free tin alloy fail the board step soldering test; too high weight percent of germanium will cause the solderability of the lead-free copper-free tin alloy to decrease, making it unable to pass the thrust test, and also make the It fails the board level soldering test.
比較例9採用0 wt%的鍺,其於板階焊接測試標示為「X」,表示過低重量百分比(小於0.005 wt%)的鍺會導致合金抗氧化特性不足;比較例10採用0.05 wt%的鍺,其於推力測試、板階焊接測試及「整體評核結果」欄位中的卻被標示為「X」,代表過量重量百分比(大於0.02 wt%)的鍺會導致合金抗氧化特性不足,且無法通過推力測試;實施例10採用0.005 wt%的鍺、實施例1採用0.01 wt%的鍺、實施例11採用0.02 wt%的鍺,其於表6中「整體評核結果」欄位皆標示為「△」或「○」,代表無鉛無銅錫合金中包含0.005~0.02 wt%的鍺能符合本發明的要求。Comparative example 9 uses 0 wt% germanium, which is marked as "X" in the plate-level welding test, indicating that too low weight percentage (less than 0.005 wt%) of germanium will lead to insufficient anti-oxidation properties of the alloy; comparative example 10 uses 0.05 wt% , which is marked as "X" in the thrust test, plate level welding test and the "Overall Evaluation Result" column, indicating that excess weight percent (greater than 0.02 wt%) of germanium will lead to insufficient oxidation resistance of the alloy , and could not pass the thrust test; Example 10 uses 0.005 wt% germanium, Example 1 uses 0.01 wt% germanium, and Example 11 uses 0.02 wt% germanium, which are listed in the "Overall Evaluation Results" column in Table 6 All are marked with "△" or "○", which means that 0.005-0.02 wt% germanium contained in the lead-free copper-free tin alloy can meet the requirements of the present invention.
[[ 總結Summarize ]]
根據前述的結果與討論可知,實施例1~11的無鉛無銅錫合金之「整體評核結果」欄位皆標示為「△」或「○」,表示其同時能通過推力測試、硬度測試、拉伸測試、板階焊接測試及冷熱循環測試,說明若以本發明的無鉛無銅錫合金(實施例1~11)製成用於球柵陣列(BGA)封裝之錫球,該錫球所形成之焊錫凸塊能承受電子元件本身或環境出現溫度變化時所帶來的熱應力,以及同時具有承受高機械衝擊的能力。According to the above results and discussions, the "Overall Evaluation Results" column of the lead-free and copper-free tin alloys of Examples 1 to 11 are all marked with "△" or "○", indicating that they can pass the thrust test, hardness test, Tensile test, board level soldering test and cold-heat cycle test show that if the lead-free copper-free tin alloy (Examples 1-11) of the present invention is used to make solder balls for ball grid array (BGA) packaging, the solder balls will The formed solder bumps can withstand the thermal stress caused by the temperature changes of the electronic components themselves or the environment, and at the same time have the ability to withstand high mechanical shocks.
綜上所述,由於本發明的無鉛無銅錫合金同時包含3.0~5.0 wt%的銀、0.01~3.5 wt%的鉍、0.01~3.5 wt%的銻、0.005~0.1 wt%的鎳、0.005~0.02 wt%的鍺及餘量的錫。因此,本發明的無鉛無銅錫合金能製成用於球柵陣列(BGA)封裝之錫球,且由該錫球所形成之焊錫凸塊能承受電子元件本身或環境出現溫度變化時所帶來的熱應力,以及同時具有承受高機械衝擊的能力,故確實能達成本發明之目的。To sum up, since the lead-free and copper-free tin alloy of the present invention simultaneously contains 3.0-5.0 wt% of silver, 0.01-3.5 wt% of bismuth, 0.01-3.5 wt% of antimony, 0.005-0.1 wt% of nickel, 0.005- 0.02 wt% germanium and balance tin. Therefore, the lead-free copper-free tin alloy of the present invention can be made into solder balls for ball grid array (BGA) packaging, and the solder bumps formed by the solder balls can withstand the temperature changes of the electronic components themselves or the environment. Therefore, it can indeed achieve the purpose of the present invention.
惟以上所述者,僅為本發明之實施例而已,當不能以此限定本發明實施之範圍,凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。However, the above are only examples of the present invention, and should not limit the scope of the present invention. Any simple equivalent changes and modifications made according to the scope of the application for patent of the present invention and the content of the patent specification are still within the scope of the present invention. within the scope of the invention patent.
本發明之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中: 圖1是一相片,說明實施例1所形成之正常焊點(焊錫凸塊)的切片; 圖2是一相片,說明比較例9所形成之不良焊點(焊錫凸塊)的切片;及 圖3是一相片,說明比較例9所形成之不良焊點(焊錫凸塊)的x-ray觀察結果。Other features and effects of the present invention will be clearly presented in the embodiments with reference to the drawings, wherein: 1 is a photograph illustrating a slice of a normal solder joint (solder bump) formed in Example 1; FIG. 2 is a photograph illustrating a section of a defective solder joint (solder bump) formed in Comparative Example 9; and FIG. 3 is a photograph illustrating the results of x-ray observation of defective solder joints (solder bumps) formed in Comparative Example 9. FIG.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW109146549A TWI762119B (en) | 2020-01-06 | 2020-01-06 | Lead-Free Copper-Free Tin Alloys and Solder Balls for Ball Grid Array Packaging |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW109146549A TWI762119B (en) | 2020-01-06 | 2020-01-06 | Lead-Free Copper-Free Tin Alloys and Solder Balls for Ball Grid Array Packaging |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202126826A TW202126826A (en) | 2021-07-16 |
| TWI762119B true TWI762119B (en) | 2022-04-21 |
Family
ID=77908644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109146549A TWI762119B (en) | 2020-01-06 | 2020-01-06 | Lead-Free Copper-Free Tin Alloys and Solder Balls for Ball Grid Array Packaging |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI762119B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108712940A (en) * | 2016-03-08 | 2018-10-26 | 千住金属工业株式会社 | Solder alloys, solder balls, solder chips, solder pastes and solder joints |
-
2020
- 2020-01-06 TW TW109146549A patent/TWI762119B/en active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108712940A (en) * | 2016-03-08 | 2018-10-26 | 千住金属工业株式会社 | Solder alloys, solder balls, solder chips, solder pastes and solder joints |
| CN108712940B (en) | 2016-03-08 | 2019-09-24 | 千住金属工业株式会社 | Solder alloy, solder ball, small pieces soft solder, soldering paste and soldered fitting |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202126826A (en) | 2021-07-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113070603B (en) | Lead-Free Copper-Free Tin Alloys and Solder Balls for Ball Grid Array Packaging | |
| US7282175B2 (en) | Lead-free solder | |
| JP5724411B2 (en) | Solder, soldering method and semiconductor device | |
| WO2006129713A1 (en) | Lead-free solder alloy | |
| JP2014217888A (en) | Solder alloy | |
| JPWO2009110458A1 (en) | Lead-free solder connection structure and solder ball | |
| US20070243098A1 (en) | Lead-Free Solder | |
| US7029542B2 (en) | Lead-free solder alloy | |
| Kang et al. | Pb-free solder alloys for flip chip applications | |
| TWI789165B (en) | Lead-free copper-free tin alloys and solder balls for ball grid array packages | |
| US20150258636A1 (en) | Solder alloy for low-temperature processing | |
| TWI762119B (en) | Lead-Free Copper-Free Tin Alloys and Solder Balls for Ball Grid Array Packaging | |
| US7629246B2 (en) | High strength solder joint formation method for wafer level packages and flip applications | |
| TWI869730B (en) | Lead-free and copper-free tin alloys and solder balls for ball grid array packaging | |
| JPH10166178A (en) | Pb-free solder material and electronic equipment using the same | |
| TWI795778B (en) | Lead-free solder alloy, solder ball, solder paste, and semiconductor device | |
| US20160256962A1 (en) | Lead-free solder having low melting point | |
| TWI838983B (en) | Lead-free solder alloy and solder joint | |
| US20040050903A1 (en) | Solder ball | |
| TWI753800B (en) | Solder alloys, solder balls and solder joints | |
| Stepniak | Mechanical loading of flip chip joints before underfill: the impact on yield and reliability | |
| Ding et al. | Aging Effects on Dynamic Bend Test Performance of Pb-Free Solder Joints on Ni/Au Finish | |
| Ribas et al. | Wafer level CSP with ultra-high thermal reliability lead-free alloys | |
| Xiong et al. | Eutectic Sn/Pb solder bump cracking issue of large-die flip chip ball grid array (FCBGA) package with electroless Ni/immersion au (ENIG) build-up substrate | |
| de Sousa et al. | Pb-free PBGA Design Points to Improve Handling Robustness |