TWI758451B - Manufacturing method and laminated sheet of semiconductor device - Google Patents

Abstract

A method of manufacturing a semiconductor device, comprising: an electronic component mounting step of placing an electronic component 2 on a laminate sheet 1 provided with an adhesive sheet 12 and a curable first resin composition layer 11; the lamination step, A sealing sheet in which the second resin composition layer 3 having curability is laminated; in the curing step, the first cured layer 11 ′ with the first resin composition layer 11 is cured, and the second resin composition layer 3 is cured The sealing body 4 obtained by peeling off the adhesive sheet 12 at the same time with the second hardened layer 3' and the electronic component 2 sealed by the first hardened layer 11' and the second hardened layer 3'; the hole forming step , forming the hole 5 ; in the step of removing smear, the sealing body 4 is de-smeared; and in the step of forming the electrode, the electrode 6 is formed. The manufacturing method of the semiconductor device can achieve high integration and high functionality of the semiconductor device, and can also be applied to a method of high efficiency and high yield.

Description

Manufacturing method and laminated sheet of semiconductor device

This invention relates to the manufacturing method of the semiconductor device provided with the sealed electronic component, and the laminated sheet which can be used for this manufacturing method.

Conventionally, in the manufacturing method of a semiconductor device, electronic components, such as a semiconductor wafer, are sealed using the sealing sheet provided with the sealing material formed in a sheet shape, and a semiconductor package is manufactured.

For example, Patent Document 1 discloses a method of sealing the semiconductor wafer with a sealing sheet after placing a semiconductor wafer on a semiconductor wafer as a support. In addition, Patent Document 2 discloses a method of sealing the semiconductor wafer with a sheet-like resin composition after placing the semiconductor wafer on the printed circuit board. Wirings are provided in advance on the semiconductor wafer or the printed circuit board, and when the semiconductor wafer is mounted, it is mounted on the semiconductor wafer or the printed circuit board so that the extraction electrodes present on the semiconductor wafer are electrically connected to the wirings. superior. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2016-96308 [Patent Document 2] Japanese Patent No. 5042297

[The problem to be solved by the invention]

In recent years, in response to demands for higher integration and higher functionality of semiconductor devices, development of, for example, substrates with built-in semiconductor wafers (wafer-embedded substrates) has been performed. However, the semiconductor packages obtained by the methods disclosed in Patent Document 1 and Patent Document 2 cannot sufficiently meet the demands for higher integration and higher functionality of semiconductor devices.

In addition, in recent years, fan-out wafer-level packaging (FOWLP) and fan-out panel-level packaging (FOPLP) have also been developed. In the manufacturing method of such a package, after sealing a plurality of semiconductor wafers together with a sheet for sealing, it is divided at a predetermined position, and a plurality of semiconductor packages can be obtained. Thereby, the semiconductor package can be produced with high efficiency and high yield. Therefore, there is also a need to develop a sealing sheet suitable for use in a manufacturing method for such a package.

The present invention has been made in view of such a practical situation to provide a method for manufacturing a semiconductor device, which can achieve high integration and high functionality of the semiconductor device, and can also be used in a method with high efficiency and high yield, and A laminate sheet that can be used in this manufacturing method is provided. [Means for solving problems]

In order to achieve the above object, first, the present invention provides a method of manufacturing a semiconductor device, comprising: an electronic component mounting step; A sheet is placed on the first resin composition layer side of the laminate sheet with the curable first resin composition layer laminated on the surface of the adhesive sheet on the side of the adhesive layer. Two or more electronic components; a lamination step of laminating the above-mentioned second resin combination of a sealing sheet having at least a curable second resin composition layer so as to cover at least the above-mentioned electronic components while being in contact with the above-mentioned first resin composition material layer; a hardening step to obtain a first hardened layer formed by hardening the above-mentioned first resin composition layer, a second hardened layer formed by hardening the above-mentioned second resin composition layer, and the above-mentioned first hardened layer and the above-mentioned The electronic component sealed by the second hardened layer, and a sealing body obtained by peeling off the adhesive sheet at the same time; a hole forming step of forming a hole that exposes a part of the surface of the electronic component and penetrates through the first hardened layer and the above-mentioned At least one hole of the second hardened layer; a desmearing step of desmearing the sealing body having the hole; and an electrode forming step of forming an electrode electrically connected to the electronic component through the hole (invention). 1).

In the manufacturing method of the semiconductor device of the above-mentioned invention (Invention 1), by including the above-mentioned steps, the steps up to the electrode formation can be efficiently performed with extremely simple operation content. In addition, since a hole is formed in at least one of the first hardened layer and the second hardened layer, and an electrode is provided in the hole, electrodes can be formed on a desired side of the semiconductor package, especially on both sides, whereby the semiconductor package can be The three-dimensional packaging of the package is also facilitated, and as a result, the high integration and high functionality of the semiconductor device can be facilitated. In addition, the above-mentioned manufacturing method can also be applied to the manufacture of FOWLP, FOPLP, component-embedded substrates, and the like. In particular, the above-described manufacturing method can seal a plurality of electronic components at once, and thus can also be applied to the manufacture of a so-called panel level package. seal.

In the above invention (Invention 1), it is preferable that the curing of the first resin composition layer and the curing of the second resin composition layer are performed simultaneously, and the peeling of the adhesive sheet is preferably performed in the first resin composition layer. and the curing of the second resin composition layer described above (Invention 2).

In the above inventions (Inventions 1 and 2), it is preferable that at least one of the first cured layer and the second cured layer exhibits insulating properties (Invention 3).

In the above inventions (Inventions 1 to 3), at least one of the first resin composition layer and the second resin composition layer is cured by heat treatment (Invention 4).

In the above invention (Invention 4), it is preferable that the above-mentioned heat treatment is performed stepwise by a plurality of times of heat treatment (Invention 5).

In the above invention (Invention 5), it is preferable that the above-mentioned heat treatment is performed by a first heat treatment for thermosetting at a temperature T1 and a second heat treatment for thermosetting at a temperature T2 higher than the temperature T1 (Invention 6) .

In the above inventions (Inventions 1 to 6), it is preferable that the curing of the first resin composition layer is performed so that the reaction rate of the first cured layer becomes 85% or more (Invention 7).

In the above inventions (Inventions 1 to 7), the curing of the second resin composition layer is preferably performed so that the reaction rate of the second cured layer becomes 85% or more (Invention 8).

In the above inventions (Inventions 1 to 8), preferably at least one of the first resin composition layer and the second resin composition layer is formed of a resin composition containing a thermosetting resin (Invention 9).

In the above invention (Invention 9), the resin composition preferably contains an inorganic filler (Invention 10).

In the above invention (Invention 10), the inorganic filler is preferably the above-mentioned inorganic filler, and the surface treatment is performed with a surface treatment agent having a minimum coating area of less than 550 m ² /g (Invention 11).

In the above inventions (Inventions 9 to 11), it is preferable that the first resin composition layer and the second resin composition layer are formed from the resin compositions having the same composition (Invention 12).

In the above inventions (Inventions 1 to 12), the thickness of the first resin composition layer is preferably 1 μm or more and 100 μm or less (Invention 13).

In the above inventions (Inventions 1 to 13), the thickness of the second resin composition layer is preferably 50 μm or more and 1000 μm or less (Invention 14).

Second, the present invention provides a laminated sheet, which can be used in the above-mentioned method of manufacturing a semiconductor device (Inventions 1 to 14), comprising: a base material and an adhesive layer laminated on one side of the base material for adhering A sheet, and a curable first resin composition layer laminated on the adhesive layer side of the adhesive sheet (Invention 15). [Effect of invention]

The manufacturing method of the semiconductor device of the present invention can achieve high integration and high functionality of the semiconductor device, and can also be applied to a method of high efficiency and high yield. Moreover, the laminated sheet of this invention can be used for this manufacturing method.

Embodiments of the present invention will be described below. A method of manufacturing a semiconductor device according to an embodiment of the present invention includes the step of placing an electronic component on an adhesive sheet including a base material and an adhesive layer laminated on one surface side of the base material, and laminating on the above-mentioned base material. One or more electronic components are mounted on the surface of the laminate sheet on the side of the first resin composition layer of the curable first resin composition layer on the side of the above-mentioned adhesive layer of the adhesive sheet; a lamination step of laminating the second resin composition layer of the sealing sheet having at least a curable second resin composition layer so as to cover at least the electronic component while being in contact with the first resin composition; and a curing step to obtain A first cured layer obtained by curing the first resin composition layer, a second cured layer obtained by curing the second resin composition layer, and the above-mentioned first cured layer and the second cured layer sealed An electronic component, a sealing body obtained by peeling off the above-mentioned adhesive sheet at the same time; a hole forming step of forming a hole that exposes a part of the surface of the electronic component and penetrates through at least one of the first hardened layer and the second hardened layer a smear-removing step, desmearing the above-mentioned sealing body forming the above-mentioned holes; and an electrode forming step, forming an electrode electrically connected to the above-mentioned electronic parts through the above-mentioned holes.

[Laminated Sheet] First, a laminated sheet that can be used in the manufacturing method of the semiconductor device of the present embodiment will be described. The laminated sheet, as described above, includes an adhesive sheet including a base material and an adhesive layer laminated on one surface side of the base material, and a hardening property laminated on the surface of the adhesive sheet on the adhesive layer side. the first resin composition layer.

1. Adhesive sheet (1) Base material The material of the base material is not particularly limited as long as it can support the adhesive layer, the first resin composition layer, etc. laminated on the base material. In particular, it is preferable that the base material has heat resistance capable of withstanding heating at the time of thermosetting the first resin composition layer and the second resin composition layer. As the material, for example, polyester films such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate, and polyethylene terephthalate, polypropylene, and other polyester films can be mentioned. Olefin film, cellophane, cellulose diacetate film, cellulose triacetate film, cellulose acetate butyrate film, polyvinyl chloride film, polyvinylidene chloride film, polyvinyl alcohol film, ethylene-acetate-vinyl copolymer film, Polystyrene film, polycarbonate film, polymethylpentene film, polysilicon film, polyetheretherketone film, polyethersilver film, polyetherimide film, polyimide film, fluororesin film, poly Amide film, acrylic resin film, norbornene resin film, cycloolefin resin film, polyphenylene sulfide compound film, liquid crystal polymer film, etc. These films may be a single layer, or may be a film in which a plurality of layers of the same type or different types are laminated. Among the above, at least one of a polyester film and a polyimide film is preferable in terms of heat resistance in the temperature range of the heat treatment described later, and a polyester film is preferable in terms of versatility. Polyethylene terephthalate film is more preferred.

The substrate may be subjected to surface treatment such as an oxidation method, a concavo-convex method, or a primer treatment for the purpose of improving the adhesion with the adhesive layer directly laminated on the substrate. The above-mentioned oxidation method includes, for example, corona discharge treatment, plasma discharge treatment, chromium oxidation treatment (wet type), flame treatment, hot air treatment, ozone, ultraviolet irradiation treatment, etc. In addition, the concavo-convex method includes, for example, , sandblasting, thermal spraying, etc. These surface treatment methods can be appropriately selected according to the type of substrate.

The thickness of the base material can be appropriately set from the viewpoints of workability, cost, etc., for example, preferably 10 μm or more, particularly 15 μm or more, and more preferably 20 μm or more. In addition, the thickness of the base material is preferably 500 μm or less, particularly 300 μm or less, and more preferably 100 μm or less.

(2) Adhesive layer, as long as the adhesive layer can exhibit sufficient adhesiveness to the first resin composition, and at the same time, the first resin composition layer or the first resin composition layer can be cured satisfactorily The peeled adhesive sheet and the adhesive constituting the adhesive layer are not particularly limited. In particular, the adhesive layer preferably has heat resistance capable of withstanding heating when the first resin composition layer or the second resin composition layer is thermally cured. The adhesive constituting the adhesive layer preferably has the desired adhesive force and releasability, and can be used, for example, acrylic adhesives, silicone adhesives, rubber adhesives, urethane adhesives adhesives, polyester-based adhesives, polyvinyl ether-based adhesives, etc. Among these, acrylic-based adhesives or silicone-based adhesives are preferably used. These adhesives may also contain plasticizers, stabilizers, adhesion imparting materials, colorants, coupling agents, antistatic agents, antioxidants, and the like. In addition, the adhesive layer may be composed of a non-energy ray-curable adhesive or an energy ray-curable adhesive.

The thickness of the adhesive layer can be appropriately set from the viewpoints of adhesive force, workability, cost, and the like. For example, it is preferably 1 μm or more, particularly 5 μm or more, and more preferably 10 μm or more. In addition, the thickness of the adhesive layer is preferably 500 μm or less, particularly 100 μm or less, and more preferably 50 μm or less.

The storage elastic modulus of the adhesive layer at 100° C. and a measurement frequency of 1 Hz is preferably 1×10 ⁵ Pa or more. If the adhesive layer has such a storage elastic modulus, after the first resin composition is hardened to form the first hardened layer, the adhesive sheet can be easily peeled off from the first hardened layer, and the adhesive can be prevented from remaining on the adhesive layer. Abnormalities on the surface of the body (so-called residual glue). The upper limit of the storage elastic modulus of the adhesive layer at 100° C. and the measurement frequency of 1 Hz is not particularly limited, but is preferably 1×10 ⁷ Pa or less. In addition, the said storage elastic modulus is the value measured by the torsional shear method using the dynamic viscoelasticity measuring apparatus, and the detail of a measuring method is described in the Example mentioned later.

The adhesive sheet preferably exhibits the following adhesive force after heating. First, the adhesive surface of the adhesive sheet 1 is attached to the substrate (copper foil or polyimide film), heated at 100°C for 30 minutes, then heated at 180°C for 30 minutes, and further heated at 180°C for 30 minutes. After heating at 190°C and 1 hour, the adhesion to copper foil at room temperature and the adhesion to polyimide film at room temperature are 0.7N/25mm or more and 2.0N/25mm or less, respectively. good. When the adhesive force after such heating is in the above-mentioned range, peeling of the adhesive sheet can be effectively prevented in the middle of the hardening step. In addition, when the 1st resin composition layer mentioned later is hardened in the stage between the 1st lamination process and the peeling process of the adhesive sheet 1, even if the adhesive sheet is heated, the adhesive sheet can be easily peeled off. In addition, the details of the measuring method of the said adhesive force are as described in the Example mentioned later. In addition, in this specification, the room temperature means the temperature of 22 degreeC or more and 24 degrees C or less.

When the adhesive layer is peeled off after the adhesive sheet is heated, from the viewpoint of effectively suppressing the adhesive residue caused by the deterioration of the adhesive layer, the 5% weight reduction temperature is preferably 250°C or higher, and is preferably 300°C The above is better. The 5% weight reduction temperature can be adjusted, for example, by increasing the bridging degree of the adhesive used for the adhesive layer and reducing the content of low molecules in the adhesive. In addition, the details of the measuring method of the said 5% weight reduction temperature are as described in the Example mentioned later.

2. First resin composition layer The first resin composition layer is not particularly limited as long as it has curability. Here, that the first resin composition layer has curability means that the first resin composition layer can be cured. The first resin composition layer may be thermally curable or energy ray curable, but preferably thermosetting. Since the 1st resin composition layer is thermosetting, even when it is difficult to irradiate an energy ray to the laminated 1st resin composition layer, this 1st resin composition layer can be hardened favorably by heating. Moreover, it is preferable that the 1st resin composition layer has adhesiveness on the surface on the opposite side to an adhesive bond layer. By making the first resin composition layer viscous, in the electronic component placement step, after the electronic components are placed on the first resin composition layer and between the lamination of the second resin composition layer in the lamination step, the electronic components can be suppressed. offset from a given position.

It is preferable that the said 1st resin composition layer is formed from the resin composition containing a thermosetting resin. By containing a thermosetting resin in a resin composition, the formed 1st resin composition layer becomes easy to have a desired hardenability. The cured layer obtained by curing the first resin composition layer preferably exhibits insulating properties. By making this 1st hardened layer show insulating property, in the semiconductor device obtained, abnormality, such as a short circuit, can be suppressed, and excellent performance can be acquired.

(1) Thermosetting resin When the above-mentioned resin composition contains a thermosetting resin, when an electronic component is sealed with the obtained first resin composition layer, the electronic component can be easily sealed firmly. The thermosetting resin is not particularly limited as long as the first resin composition layer can be cured, and, for example, resins usually contained in sealing materials can be used. Specifically, epoxy resins, phenol resins, naphthol-based resins, active ester-based resins, benzoxazine-based resins, cyanate-based resins, etc. may be mentioned, and these may be used alone or in combination of two types. Use above.

The above-mentioned epoxy resins generally have properties of being three-dimensionally reticulated when heated to form a strong cured product. As such an epoxy resin, various conventional epoxy resins can be used, and specific examples thereof include glycidyl ethers of phenols such as bisphenol A, bisphenol F, resorcinol, phenol novolac, cresol novolac, and the like; butanediol; , glycidyl ethers of alcohols such as polyethylene glycol, polypropylene glycol, etc.; glycidyl ethers of carboxylic acids such as phthalic acid, isophthalic acid, tetrahydrophthalic acid, etc.; Glycidyl-type or alkyl-glycidyl-type epoxy resins in which the active hydrogen of the nitrogen atom of the ester is substituted with a glycidyl group; vinylcyclohexane diepoxide compounds, 3,4-epoxycyclohexylmethyl-3 ,4-dicyclohexanecarboxylate, 2-(3,4-epoxy)cyclohexyl-5,5-spiro(3,4-epoxy)cyclohexane-m-dioxane, etc., by For example, a so-called alicyclic epoxy compound in which an epoxy group is introduced by oxidizing a carbon-carbon double bond in the molecule. In addition, the epoxy resin which has a biphenyl skeleton, a triphenylmethane skeleton, a dicyclohexadiene skeleton, a naphthalene skeleton, etc. can also be used. These epoxy resins can be used alone or in combination of two or more. Among the above epoxy resins, glycidyl ethers having bisphenol A (bisphenol A type epoxy resins), epoxy resins having a biphenyl skeleton (biphenyl type epoxy resins), and epoxy resins having a naphthalene skeleton are preferably used. Epoxy resin (naphthalene type epoxy resin) or a combination of these.

As said phenol resin, bisphenol A, tetramethyl bisphenol A, diallyl bisphenol A, biphenol, bisphenol F, diallyl bisphenol F, triphenylmethane, for example, are mentioned. Type phenol, tetraphenol, novolac type phenol, cresol novolac resin, phenol having a biphenyl aralkyl skeleton (biphenyl type phenol), etc. Among these, biphenyl type phenol is preferably used. These phenol resins may be used alone or in combination of two or more. Furthermore, when an epoxy resin is used as the curable resin, it is preferable to use a phenol resin in combination from the viewpoint of reactivity with the epoxy resin.

The content of the thermosetting resin in the resin composition is preferably 10% by mass or more, particularly preferably 15% by mass or more, and more preferably 20% by mass or more. In addition, the content is preferably 60 mass % or less, particularly 50 mass % or less, and more preferably 40 mass % or less. By making this content into 10 mass % or more, hardening of a 1st resin composition layer can be made more sufficient, and an electronic component can be sealed more firmly. Moreover, by making this content into 60 mass % or less, the hardening of a 1st resin composition layer in an unintended stage can be suppressed more, and storage stability can be made more excellent. In addition, the said content of a thermosetting resin is a solid content conversion value.

(2) Thermoplastic resin In addition, the resin composition may contain a thermoplastic resin. By making the said resin composition contain a thermoplastic resin, it becomes easy to form a 1st resin composition layer in a sheet shape, and it can improve workability|operativity. Moreover, the low stress property of the 1st hardened layer which hardened the 1st resin composition layer can be obtained efficiently. Moreover, it becomes easy to provide the said viscosity to a 1st resin composition layer. Therefore, the thermoplastic resin is not particularly limited as long as the first resin composition layer can be formed into a sheet shape, and, for example, resins usually contained in sealing materials can be used. Examples of thermoplastic resins include phenoxy-based resins, olefin-based resins, polyester-based resins, polyurethane-based resins, polyester urethane-based resins, acrylic resins, amide-based resins, styrene-isobutylene -Styrenic resins such as styrene copolymers (SIS), silane-based resins, rubber-based resins, polyvinyl acetal-based resins, polyvinyl butyral resins, polyimide-based resins, polyamide-imide resins Amine-based resins, polyether-based resins, poly-based resins, fluorine-based resins, etc., may be used alone or in combination of two or more. Furthermore, from the viewpoint of electrode formability, it is preferable to use at least one thermoplastic resin selected from the group consisting of phenoxy-based resins, polyvinyl acetal resins, and polyvinyl butyral resins.

Although the phenoxy-based resin is not particularly limited, for example, bisphenol A type, bisphenol F type, bisphenol A/bisphenol F copolymer type, bisphenol S type, bisphenol acetophenone type, Phenolic type, fluorene type, dicyclopentadiene type, norbornene type, naphthalene type, anthracene type, adamantane type, terpene type, trimethylcyclohexane type, biphenol type, biphenyl type Among them, bisphenol A-type phenoxy resin is preferably used. The terminal of the phenoxy-based resin may be any functional group such as a phenolic hydroxyl group and an epoxy group. A phenoxy resin may be used individually by 1 type, and may use 2 or more types together.

The content of the thermoplastic resin in the resin composition is preferably 1% by mass or more, particularly preferably 3% by mass or more, and more preferably 5% by mass or more. Further, the content is preferably 30% by mass or less, particularly preferably 20% by mass or less, and more preferably 10% by mass or less. By making this content into the said range, it becomes easy to form a 1st resin composition layer into a sheet-like shape, and a 1st resin composition layer becomes easy to exhibit favorable viscosity. In addition, the said content of a thermoplastic resin is a solid content conversion value.

(3) Inorganic filler In addition, the resin composition may contain an inorganic filler. By making the said resin composition contain an inorganic filler, the hardened layer which hardened the 1st resin composition layer can have excellent mechanical strength, and the reliability of the obtained semiconductor device can be improved. Examples of the inorganic filler include silica, alumina, glass, titanium oxide, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, and magnesium oxide. , alumina, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, amorphous silica, mullite, cordierite, etc. , montmorillonite (montmorillonite), bentonite, boehmite (boehmite), talc, iron oxide, silicon carbide, zirconia and other fillers as materials, these can be used alone or in combination of two or more. Among them, silica fillers and alumina fillers are preferably used, and especially silica fillers are preferably used.

The above-mentioned inorganic filler is preferably surface-treated with a surface-treating agent having a predetermined minimum coating area. Thereby, the dispersibility, filling property, etc. of an inorganic filler in a resin composition can be made more excellent, and the effect mentioned later can also be acquired according to the surface treatment agent used.

When forming a plating film on the surface of the first cured layer obtained by curing the first resin composition layer, it is preferable to use the surface treatment agent with a minimum coating area of less than 550 m ² / from the viewpoint of suppressing the expansion of the plating film. g of surface treatment agent.

Inorganic fillers that are surface-treated with a surface-treating agent with a minimum coating area of less than 550 m ² /g have a relatively high affinity with a treatment solution such as an alkaline solution used in the desmear step, and the hardened layer is exposed to the surface. In the case of this treatment solution, the inorganic filler is easily detached from the first hardened layer. Therefore, when metal plating is performed in the electrode forming step after the desmear step, the metal penetrates into the portion where the inorganic filler of the hardened layer is removed, and the anchoring effect is exhibited, so that the plating film is firmly adhered to the hardened layer. As a result, air does not easily enter the interface between the first hardened layer and the plating film, and even if heat is generated in subsequent manufacturing steps, when the obtained semiconductor device is used, etc., foaming of the plating film due to expansion of air can be suppressed.

From the viewpoint of more effectively suppressing the occurrence of blistering in the coating film, the minimum coating area of the surface treatment agent is preferably 520 m ² /g or less, and particularly preferably 450 m ² /g or less. On the other hand, the lower limit of the minimum coating area of the surface treatment agent is preferably 100 m ² /g or more, particularly 200 m ² /g or more, and more preferably 300 m ² /g or more. By setting the minimum coating area to be 100 m ² /g or more, the dispersibility and filling properties of the inorganic filler in the resin composition can be further improved.

In addition, the minimum coating area (m ² /g) of the surface treatment agent refers to the area (m ² ) of the monomolecular film when 1 g of the surface treatment agent is used to form the monomolecular film. The minimum coverage area can be theoretically calculated from the structure of the surface treatment agent. For example, when considering a surface treatment agent with a trialkoxysilyl group as a reactive group, the Si(O) generated by the hydrolysis of the trialkoxysilyl group The structure of ₃ is a tetrahedron with one Si atom and three O atoms as vertices. Here, it is assumed that the Si atom is a sphere with a radius of 2.10 Å, the O atom is a sphere with a radius of 1.52 Å, the Si-O bonding distance is 1.51 Å, and the angle formed by the sides of the two Si-O bonds is 109.5 °. Then, assuming that the 3 O atoms in the tetrahedron all react with the hydroxyl groups on the surface of the inorganic filler, calculate the minimum circular area that can be covered by the 3 O atoms, and the equivalent per 1 molecule of the surface treatment agent is 1.33×10 ^-19 m ² /molecule. Converting this to 1 molar equivalent, it is 8.01×10 ⁴ m ² /mol. By dividing the area per molar equivalent by the molecular weight quotient of the surface treatment agent, the minimum value of the surface treatment agent can be obtained. Covered area (m ² /g).

Preferable examples of the surface treatment agent having a minimum coating area of less than 550 m ² /g include epoxysilane and vinylsilane. These may be used alone or in combination.

Specific examples of the above-mentioned epoxysilanes include, for example, 3-glycidoxypropyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, and 3-glycidoxypropylmethyldimethyldimethylene. Oxysilane, 3-glycidoxypropylmethyldiethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, etc. Among these, it is preferable to use 3-glycidoxypropyltrimethoxysilane from the viewpoint of effectively promoting the detachment of the inorganic filler.

Specific examples of the above vinylsilane include vinyltriacetoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltrichlorosilane, vinyltris(2-methyl) oxyethoxy) silane, etc. Among these, vinyltrimethoxysilane is preferably used from the viewpoint of effectively promoting the detachment of the inorganic filler.

The shape of the inorganic filler may be any of granular, needle, plate, and indeterminate shapes. However, when an inorganic filler surface-treated with the above-mentioned surface treatment agent is used as the inorganic filler, the above-mentioned surface treatment agent can effectively carry out this process. From the viewpoint of surface treatment, spherical shape is preferable.

The average particle diameter of the inorganic filler is preferably 0.01 μm or more, particularly 0.1 μm or more, and more preferably 0.3 μm or more. Further, the average particle diameter of the inorganic filler is preferably 3.0 μm or less, particularly preferably 1.0 μm or less. When the inorganic filler is an inorganic filler surface-treated with the above-mentioned surface-treating agent, if the average particle diameter of the inorganic filler is 0.01 μm or more, it becomes a surface area that can be easily surface-treated with the surface-treating agent, which is effective. surface treatment. On the other hand, by setting the average particle diameter of the inorganic filler to be 3.0 μm or less, the inorganic filler can be well filled in the first hardened layer, and the first hardened layer can have better mechanical strength. In particular, as the inorganic filler, when the inorganic filler surface-treated with the above-mentioned surface-treating agent is used, by making the average particle diameter 3.0 μm or less, the inorganic filler has the ability to be easily surface-treated with the surface-treating agent. surface area for effective surface treatment. In addition, the average particle diameter of the inorganic filler in this specification is the value measured by the dynamic light scattering method using the particle size distribution measuring apparatus (Nikiso Co., Ltd. make, product name "Nanotrac Wave-UT151").

In addition, the maximum particle diameter of the inorganic filler is preferably 0.05 μm or more, particularly preferably 0.5 μm or more. In addition, the maximum particle size is preferably 5 μm or less, particularly preferably 3 μm or less. By making the maximum particle diameter of the inorganic filler into the above-mentioned range, it becomes easy to fill the inorganic filler in the first hardened layer, and the first hardened layer can have more excellent mechanical strength. The average particle diameter of the inorganic filler in this specification is a value measured by a dynamic light scattering method using a particle size distribution analyzer (manufactured by Nikkiso Co., Ltd., product name "Nanotrac Wave-UT151").

The content of the inorganic filler in the resin composition is preferably 40% by mass or more, particularly preferably 50% by mass or more. By making this content into 40 mass % or more, it becomes easy to make a 1st hardened layer have a mechanical strength, and the effect of surface treatment by a surface treatment agent can coexist. Further, the content of the inorganic filler in the resin composition is preferably 90% by mass or less, particularly preferably 85% by mass or less, and more preferably 80% by mass or less. By making content of the inorganic filler surface-treated by a surface treatment agent into 90 mass % or less, a 1st resin composition layer can have more favorable mechanical strength. In addition, the said content of an inorganic filler is a solid content conversion value.

(4) Hardening catalyst It is preferable that the above-mentioned resin composition further contains a hardening catalyst. Thereby, the hardening reaction of a thermosetting resin can be advanced efficiently, and a resin composition layer can be hardened favorably. Examples of the curing catalyst include imidazole-based curing catalysts, amine-based curing catalysts, phosphorus-based curing catalysts, and the like.

Specific examples of imidazole-based curing catalysts include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 2-ethyl-4-methylimidazole, and 1-benzyl imidazole. -2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-phenylimidazole, 1,2-dimethylimidazole, 1-cyanoethyl- 2-Methylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenyl Imidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2-phenyl-4,5-bis(hydroxymethyl)imidazole, etc., from the viewpoint of reactivity, use 2-ethyl Methyl-4-methylimidazole is preferred.

Specific examples of the amine-based curing catalyst include triazine such as 2,4-diamino-6-[2'-methylimidazolyl-(1')]ethyl-s-triazine. Compounds, tertiary amines such as 1,8-diazabicyclo[5,4,0]undec-7-ene (DBU), triethylenediamine, benzyldimethylamine, triethanolamine, etc. compound. Among them, 2,4-diamino-6-[2'-methylimidazolyl-(1')]ethyl-s-triazine is preferred.

Moreover, as a specific example of a phosphorus type hardening catalyst, triphenylphosphine, tributylphosphine, tris (p-methylphenyl) phosphine, tris (nonylphenyl) phosphine, etc. are mentioned.

The said hardening catalyst may be used individually by 1 type, and may use 2 or more types together.

The content of the curing catalyst in the resin composition is preferably 0.01% by mass or more, particularly preferably 0.05% by mass or more, and more preferably 0.1% by mass or more. In addition, the content is preferably 2.0 mass % or less, particularly 1.5 mass % or less, and more preferably 1.0 mass % or less. By making this content into the said range, a resin composition layer can be hardened more favorably. In addition, the said content of catalyst hardening is a solid content conversion value.

(5) Other components The above-mentioned resin composition may further contain a plasticizer, a stabilizer, an adhesion imparting material, a colorant, a coupling agent, an antistatic agent, an antioxidant, and the like.

(6) Physical properties of the first resin composition layer The material constituting the first resin composition layer has a melt viscosity at 90°C before curing (hereinafter, sometimes referred to as "90°C melt viscosity"), and the upper limit is 1.0×10 ⁵ Pa·s or less is preferable, and 1.0×10 ⁴ Pa·s or less is especially preferable. When the upper limit of the 90° C. melt viscosity is as described above, the electronic component can be well embedded in the first resin composition layer under heating, thereby effectively suppressing generation of voids around the electronic component. In addition, the lower limit of the melt viscosity at 90°C is preferably 1.0 Pa·s or more, especially 10 Pa·s or more. If the lower limit of the melt viscosity at 90°C is as described above, the material constituting the first resin composition layer does not flow excessively when the first resin composition is laminated on the electronic component under heating in the lamination step. Contamination of the device or displacement of the wafer can be prevented.

Here, the melt viscosity at 90°C in this specification is measured using a viscoelasticity measuring device. Specifically, the melt viscosity can be measured on the conditions of a temperature range of 30 to 150° C. and a temperature increase rate of 5° C./min using MCR302 (manufactured by Anton Parl) for a resin composition layer having a thickness of 15 mm.

(7) Thickness of the first resin composition layer

The thickness of the first resin composition layer can be set in consideration of the application of sealing, the thickness of the cured first resin composition layer after sealing, etc. For example, it is preferably 1 μm or more, particularly preferably 5 μm or more, and further preferably 10 μm The above is better. Further, the thickness of the first resin composition layer is preferably 300 μm or less, particularly preferably 200 μm or less. By making the thickness of the 1st resin composition layer into 1 micrometer or more, the effect of protecting electronic components by the 1st hardened layer which hardened the 1st resin composition layer can be obtained favorably, and favorable insulating property can be acquired. Moreover, by making the thickness of the 1st resin composition layer into 300 micrometers or less, the hardening shrinkage of the 1st hardened layer which hardened the 1st resin composition layer can be reduced, and the curvature of a sealing body can be suppressed by this.

3. Peel off the sheet

The above-mentioned laminate sheet may also include a release sheet. That is, the sheet can be peeled off in the area layer on the side of the first resin composition layer of the laminated sheet. By having the peeling sheet, it is excellent in workability at the time of storage of the laminated sheet. The structure of the release sheet is optional, and examples thereof include polyester films such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate, polypropylene, Plastic films such as polyolefin films such as polyethylene. It is preferable to give peeling treatment to these peeling surfaces. The release agent used for the peeling treatment includes, for example, silicone-based, alkyd-based, fluorine-based, long-chain alkyl-based, and other release agents.

Although there is no restriction|limiting in particular about the thickness of a peeling sheet, Usually, it is 20 micrometers or more and 250 micrometers or less.

4. Manufacturing method of laminated sheet The laminated sheet of the present embodiment can be manufactured, for example, by separately producing an adhesive sheet including a base material and an adhesive layer, and a first resin composition layer and a release sheet. After the resin sheet of the sheet, the surface on the adhesive layer side of the adhesive sheet is layered with the area on the side of the first resin composition layer of the resin sheet. In addition, the peeling sheet may be peeled after laminating the adhesive sheet and the resin sheet, and may be used to protect the first resin composition layer until it is used for sealing.

The above-mentioned adhesive sheet can be manufactured by a general manufacturing method. For example, it can be manufactured by forming an adhesive layer on a release sheet as an engineering material, and then transferring the adhesive layer to one side of a base material. Here, the adhesive layer can be coated with a mold on the peeling surface of the peeling sheet by preparing a coating liquid containing an adhesive composition constituting the adhesive layer and, if desired, a solvent or a dispersing agent. A cloth machine, a curtain coater, a spray coater, a slit coater, a knife coater, etc. apply this coating liquid to form a coating film, and form the coating film by drying it.

The resin sheet including the first resin composition layer and the release sheet can be produced, for example, by preparing a coating liquid containing the resin composition described above and, if desired, further containing a solvent or dispersant, and applying a coating solution to the release sheet. On the peeling surface of the coating, the coating liquid is coated with a die coater, a curtain coater, a spray coater, a slit coater, a blade coater, etc. to form a coating film. The film is dried to form a first resin composition layer.

The properties of the coating liquid for forming the above-mentioned adhesive layer and the coating liquid for forming the first resin composition layer are not particularly limited as long as they can be coated. The component of the resin composition layer may be contained as a solute, or may be contained as a dispersoid. Moreover, the said solvent, the organic solvent of toluene, ethyl acetate, methyl ethyl ketone, etc. are mentioned.

[sealing plate]

Next, the sealing sheet about the manufacturing method of the semiconductor device of this Embodiment mentioned above is demonstrated. The sealing sheet includes at least a curable second resin composition layer. Here, that the second resin composition layer has curability means that the resin composition layer can be cured, in other words, the second resin composition layer is not cured in the state constituting the sealing sheet. The second resin composition layer may be thermosetting or energy ray-curable, and preferably thermosetting. By making the second resin composition layer thermosetting, even when it is difficult to irradiate the laminated second resin composition layer with energy rays, the second resin composition layer can be cured favorably by heating. In addition, the sealing sheet may further include a release sheet laminated on at least one surface of the second resin composition layer.

1. Second resin composition layer

It is preferable that the said 2nd resin composition layer is formed from the resin composition containing a thermosetting resin. As the resin composition for forming the second resin composition layer, the above-mentioned resin composition for forming the first resin composition layer can be used. The second cured layer formed by curing the second resin composition layer preferably exhibits insulating properties. By making this 2nd hardened layer exhibit insulating property, abnormality, such as a short circuit, can be suppressed, and excellent performance can be acquired. Furthermore, it is preferable that both the 1st hardened layer and the 2nd hardened layer have insulating properties. Moreover, it is preferable that a 1st resin composition layer and a 2nd resin composition layer are formed from the resin composition which has the same composition from the viewpoint of the adhesiveness of these layers.

(1) Physical properties of the second resin composition layer

For the material constituting the second resin composition layer, the melt viscosity at 90°C before curing (hereinafter, sometimes referred to as "90°C melt viscosity"), the upper limit is preferably 1.0×10 ⁵ Pa·s or less, especially It is preferably 1.0×10 ⁴ Pa·s or less. When the upper limit of the melt viscosity at 90°C is as described above, the electronic component can be well embedded in the second resin composition layer under heating in the lamination step, thereby effectively suppressing generation of voids around the electronic component. . In addition, the lower limit of the melt viscosity at 90°C is preferably 1.0 Pa·s or more, especially 10 Pa·s or more. If the lower limit of the melt viscosity at 90°C is as described above, the material constituting the second resin composition layer does not flow excessively when the second resin composition is laminated on the electronic component under heating in the lamination step. Contamination of the device can be prevented.

Here, the melt viscosity at 90°C in this specification is measured using a viscoelasticity measuring device. Specifically, the melt viscosity can be measured on a resin composition layer having a thickness of 15 mm using MCR302 (manufactured by Shimadzu Corporation) under the conditions of a temperature range of 30 to 150° C. and a temperature increase rate of 5° C./min.

(2) Thickness of the second resin composition layer The thickness of the second resin composition layer can be set in consideration of the application of sealing, the thickness of the cured second resin composition layer after sealing, etc., for example, preferably 20 μm or more . In addition, the thickness of the second resin composition layer is preferably 1000 μm or less, more preferably 500 μm or less, particularly preferably 300 μm or less, and more preferably 200 μm or less. By setting the thickness of the second resin composition layer to be 20 μm or more, in the lamination step, the electronic components can be well embedded in the second resin composition layer, and at the same time, a good product obtained by curing the second resin composition layer can be obtained. The effect of the second hardened layer protecting electronic components. In addition, the curvature of the first cured layer caused by the curing shrinkage of the first cured layer can be easily offset by the curvature of the second cured layer, and the sealing body itself can be suppressed from being bent. Moreover, by making the thickness of a 2nd resin composition layer into 1000 micrometers or less, the hardening shrinkage of the 2nd hardened layer which hardened the 2nd resin composition layer can be reduced, and the curvature of a sealing body can be suppressed.

2. Peeling sheet The above-mentioned sealing sheet may also have a peeling sheet. As the release sheet, what has been described for the release sheet included in the above-mentioned resin sheet can be used. The sealing sheet may be provided with a release sheet only on one side of the second resin composition layer, or may be provided with a release sheet on both sides of the second resin composition layer.

3. Manufacturing method of sealing sheet The sealing sheet of the manufacturing method of the semiconductor device of the present embodiment can be manufactured in the same manner as the conventional sealing sheet. For example, a coating liquid containing the above-mentioned resin composition and, if desired, further containing a solvent or dispersant is prepared, and the peeling surface of the peeling sheet is coated with a die coater, curtain coater, spray coater, A slit coater, a knife coater, etc. apply this coating liquid to form a coating film, and dry the coating film to manufacture a sealing sheet. The properties of the coating liquid are not particularly limited as long as it can be applied, and the component for forming the second resin composition layer may be contained as a solute or may be contained as a dispersoid. The peeling sheet can be peeled off as an engineering material or used to protect the resin composition layer until it is used for sealing.

In addition, in the method for producing a sealing sheet in which a release sheet is laminated on both surfaces of the second resin composition layer, a coating liquid can be applied to the release surface of the release sheet to form a coating film, and this can be dried to form a second 2. A resin sheet composed of a resin composition layer and a release sheet, and the release surface of another release sheet is adhered to the surface of the resin sheet on the opposite side of the release sheet on the side of the second resin composition layer to obtain a peel-off sheet. Sealing sheet composed of sheet/second resin composition layer/release sheet. At least one of the peeling sheets in the sealing sheet may be peeled off as a construction material, and may be used to protect the second resin composition layer until it is used for sealing. In addition, organic solvents, such as toluene, ethyl acetate, methyl ethyl ketone, etc. are mentioned as said solvent.

[Manufacturing method of semiconductor device]

Next, a method for manufacturing the semiconductor device of the present embodiment will be described. 1 to 3 are cross-sectional views illustrating an example of a method of manufacturing a semiconductor device according to the present embodiment. First, as shown in FIG. 1( a ), as an electronic component placement step, one or more electronic components 2 are placed on the surface of the laminate sheet 1 on the side of the first resin composition layer 11 . 1( a ), the laminate sheet 1 is shown in a state including an adhesive sheet 12 and a first resin composition layer 11 laminated on the adhesive sheet 12 . The method of mounting the electronic component 2 on the laminated sheet 1 is not particularly limited, and a general method can be employed. Moreover, when mounting the electronic component 2 on the laminated sheet 1, you may heat it. By heating, the adhesiveness of the electronic component 2 can be improved.

The electronic component 2 is not particularly limited as long as it is an electronic component that can be used as a general sealing object, and examples thereof include semiconductor wafers and the like. In addition, the electronic component 2 may be such that a semiconductor wafer is mounted on a predetermined position of the carrier. At this time, in the state thus mounted, at least a part of the carrier is sealed together with the semiconductor wafer or the like. As an example of the said carrier, a lead frame, a polyimide tape, a printed wiring board, etc. are mentioned. Furthermore, around the electronic component 2 on the laminate sheet 1, it may be provided A frame (also referred to as a frame-shaped member) made of a metal such as copper or a resin frame or the like is sealed together with the electronic component 2 at least a part of the frame-shaped member. The above-mentioned frame-shaped member is usually composed of one or more openings composed of holes penetrating the thickness direction, and a frame-shaped portion composed of copper, resin, or the like.

When the frame-shaped member is used, in the electronic component placement step, for example, after the frame-shaped member is placed on the adhesive surface of the adhesive sheet 1, the electronic component 2 is placed at the position of the opening of the frame-shaped member. . Thereby, in the lamination step, bleeding of the sealing resin to the outside of the opening can be suppressed, the thickness of the obtained semiconductor device can be made uniform, and bending of the cured layer can be suppressed, thereby suppressing the bending of the obtained semiconductor device.

Next, as shown in FIG. 1( b ), as a lamination step, a sealing sheet including a second resin composition layer 3 having at least curability is laminated so as to cover the electronic component 2 while being in contact with the above-mentioned first resin composition 11 . the second resin composition layer 3. When the sealing sheet has a release sheet only on one side, it is preferable to laminate the exposed surface of the second resin composition layer 3 of the sealing sheet so as to cover the electronic component 2, and then remove the release sheet from the second resin composition. The composition layer 3 is peeled off. In addition, when the sealing sheet is provided with release sheets on both sides, it is preferable that the exposed surface of the resin composition layer exposed by peeling off one release sheet is laminated so as to cover the electronic component 2, and then the other release sheet is laminated. The sheet was peeled off from the second resin composition layer 3 . Furthermore, when the sealing sheet is provided with a release sheet on one or both surfaces, the exposed surface of the second resin composition layer 3 of the sealing sheet may be laminated so as to cover the electronic component 2, as will be described later. After the 2nd resin composition layer 3 is hardened and the 2nd hardened layer 3' is formed, the peeling sheet is peeled off from the 2nd hardened layer 3'.

The above lamination step can be performed by a conventionally known lamination apparatus, and the lamination conditions, for example, are preferably such that the temperature of the second resin composition layer 3 is 40°C or higher, particularly 50°C or higher. In addition, the temperature is preferably 180°C or lower, more preferably 150°C or lower, and particularly preferably 120°C or lower. The pressure of the lamination is preferably 0.1 MPa or more. In addition, the pressure is preferably 0.5 MPa or less. The time required for the lamination is preferably 10 seconds or more, particularly 30 seconds or more. In addition, this time is preferably 10 minutes or less, particularly preferably 5 minutes or less.

The above-mentioned lamination step can be performed under normal pressure conditions, but is preferably performed under reduced pressure conditions from the viewpoints of the adhesion and embedding properties of the second resin composition layer 3 to the electronic component 2 . The reduced pressure conditions are, for example, preferably 5 kPa or less, more preferably 500 Pa or less, and particularly preferably 100 Pa or less.

Next, as shown in FIG.1(c) and FIG.1(d), the sealing body 4 is obtained by the hardening process. In this curing step, first, as shown in FIG. 1( c ), it is preferable to simultaneously cure the first resin composition layer 11 and the second resin composition layer 3 to form the first cured layer 11 ′ and the second cured layer, respectively Layer 3'. This hardening is preferably performed by heat treatment, that is, it is preferable to harden the first resin composition layer 11 and the second resin composition layer 3 by heating.

After the hardening is completed, the reaction rate of the first hardened layer 11 ′ is preferably 85% or more, more preferably 90% or more, and particularly preferably 95% or more. When the first resin composition layer 11 is cured so that the reaction rate of the first cured layer 11 ′ is 85% or more, the curing reaction of the first resin composition layer 11 can proceed more favorably, and a moderate three-dimensionality can be achieved. Therefore, the surface of the first hardened layer 11' does not become excessively rough after the desmear step to be described later, and the arithmetic mean roughness of the surface of the first hardened layer 11' can be made relatively small. Thereby, it becomes difficult to form a conductor inside the 1st hardened layer 11' in the subsequent electrode formation process, Therefore Even when a fine electrode is formed, insulation defects, such as a short circuit, can be suppressed effectively. In addition, the measuring method of the said reaction rate is as described in the test example mentioned later.

In addition, after the completion of hardening, the reaction rate of the second hardened layer 3' is preferably 85% or more, more preferably 90% or more, and particularly preferably 95% or more. When the second resin composition layer 3 is cured so that the reaction rate of the second cured layer 3 ′ is 85% or more, the curing reaction of the second resin composition layer 3 can proceed more favorably, and a moderate three-dimensionality can be achieved. Therefore, the surface of the second hardened layer 3' does not become excessively rough after the desmear step to be described later, and the arithmetic mean roughness of the surface of the second hardened layer 3' can be reduced. Thereby, it becomes difficult to form a conductor inside the 2nd hardened layer 3' in the subsequent electrode formation process, Therefore Even when a fine electrode is formed, insulation defects, such as a short circuit, can be suppressed effectively. In addition, the measuring method of the said reaction rate is as described in the test example mentioned later.

The arithmetic mean roughness (Ra value) of the surface on the opposite side to the electronic component 2 of the first hardened layer 11 ′ formed is preferably 300 nm or less, preferably 150 nm, from the viewpoint of easily forming fine electrodes. More preferably, it is less than or equal to 100 nm, and it is more preferably less than or equal to 50 nm. The lower limit value of the arithmetic mean roughness (Ra value) is not particularly limited, but it is preferably 1 nm or more from the viewpoint of further stabilizing the adhesion of the electrode 6 after the electrode formation step described later, especially It is preferably 5 nm or more, and more preferably 10 nm or more. In addition, the measuring method of this arithmetic mean roughness (Ra value) is as described in the test example mentioned later.

The arithmetic mean roughness (Ra value) of the surface opposite to the electronic component 2 of the formed second hardened layer 3 ′ is preferably 300 nm or less, preferably 150 nm, from the viewpoint of easily forming fine electrodes. More preferably, it is less than or equal to 100 nm, and it is more preferably less than or equal to 50 nm. The lower limit value of the arithmetic mean roughness (Ra value) is not particularly limited, but it is preferably 1 nm or more from the viewpoint of further stabilizing the adhesion of the electrode 6 after the electrode formation step described later, especially It is preferably 5 nm or more, and more preferably 10 nm or more. In addition, the measuring method of this arithmetic mean roughness (Ra value) is as described in the test example mentioned later.

The temperature of the curing by heating and the heat treatment of the first resin composition layer 11 and the second resin composition layer 3 is preferably, for example, 100°C or higher, particularly 120°C or higher. In addition, the temperature is preferably 240°C or lower, particularly 200°C or lower. In addition, the time for the heat treatment is preferably 15 minutes or more, and particularly preferably 20 minutes or more. In addition, this time is preferably 300 minutes or less, particularly preferably 100 minutes or less. Moreover, it is preferable that the hardening by heating of the said 1st resin composition layer 11 and the 2nd resin composition layer 3 is performed stepwise by a plurality of heat treatments. Thereby, the said reaction rate of the 1st hardened layer 11' and the 2nd hardened layer 3' can be easily made into a desired value. The heating at this time is preferably divided into two or more times, and in particular, it is more preferable to perform a first heat treatment for thermosetting at a temperature T1 and a second heat treatment for thermosetting at a temperature T2 higher than the temperature T1 2-stage heat treatment of heat treatment. In this case, in the first heat treatment, the temperature T1 is preferably 100° C. or higher and 130° C. or lower, and the heat treatment time is preferably 15 minutes or more and 60 minutes or less. In addition, in the second heat treatment, the temperature T2 is preferably 150° C. or higher and 220° C. or lower, and the heat treatment time is preferably 30 minutes or more and 120 minutes or less.

After hardening of the 1st resin composition layer 11 and the 2nd resin composition layer 3, as shown in FIG.1(d), it is preferable to peel the adhesive sheet 12 from the 1st hardened layer 11'. Thereby, the sealing body 4 provided with the 1st hardened layer 11', the 2nd hardened layer 3', and the electronic component 2 sealed by the 1st hardened layer 11' and the 2nd hardened layer 3' can be obtained. Here, when the adhesive sheet 12 includes an adhesive layer having energy ray curability, as described above, before peeling off, the adhesive layer is cured by irradiating the adhesive layer with energy rays, so that the adhesive force of the adhesive sheet 12 is lowered, so that it is possible to This peeling is easily performed.

1( c ) and FIG. 1( d ), although the first resin composition layer 11 and the second resin composition layer 3 are cured, the adhesive sheet 12 is not cured until the curing step is performed. However, the peeling of the adhesive sheet 12 may be performed initially, and the curing of the first resin composition layer 11 and the second resin composition layer 3 may be performed after that. 1( c ) and FIG. 1( d ), although the curing of the first resin composition layer 11 and the second resin composition layer 3 is carried out simultaneously, it is also possible to The hardening of the 1st resin composition layer 11 is performed in the stage between a mounting process and a lamination process, and the hardening of the 2nd resin composition layer 3 is performed in a hardening process. When the curing of the first resin composition layer 11 and the curing of the second resin composition layer 3 are performed separately in this way, the preferable conditions for the respective curing are also as described above.

Next, an electrode can be formed on at least one of the first hardened layer and the above-mentioned second hardened layer by any conventionally known method. An example of formation by the semi-additive method will be described below.

That is, after the hardening step, as a hole forming step, a hole 5 is formed that exposes a part of the surface of the electronic component 2 and that penetrates at least one of the first hardened layer 11' and the second hardened layer 3'. The formation of the hole 5 may be provided on the desired side of the first hardened layer 11 ′ and the second hardened layer 3 ′ in accordance with the structure of the obtained semiconductor device, and may also be provided on the first hardened layer 11 ′ and both sides of the second hardened layer 3'. Here, Fig. 2(a) is a cross-sectional view showing a state in which the hole 5 penetrating the first hardened layer 11' is formed. At this time, the hole 5 penetrating to the interface between the first hardened layer 11' and the electronic component 2 is formed from the surface on the opposite side of the first hardened layer 11' to the second hardened layer 3'. On the other hand, Fig. 3(a) is a cross-sectional view showing a state in which a hole 5 penetrating the second hardened layer 3' is formed. At this time, the hole 5 penetrating to the interface between the first hardened layer 11' and the electronic component 2 is formed from the surface of the first hardened layer 11' on the opposite side to the second hardened layer 3'. The formation of the hole 5 can be performed by a general method. For example, the surface on which the hole 5 is formed can be formed by irradiating a laser with a laser irradiation apparatus under general irradiation conditions.

Next, as a desmear step, a desmear process is performed on the sealing body 5 in which the hole 5 is formed. In the above-mentioned hole forming step, when the holes 5 are formed, residues (smears) of the components constituting the first hardened layer 11' or the second hardened layer 3' are generated, and the residues may remain in the holes 5. However, by performing the desmear step, the smear in the hole 5 can be removed, and in the subsequent electrode formation step, when the electrode is formed in the hole 5, the poor conduction of the electrode can be suppressed.

The above-mentioned desmear treatment can be performed by a general method, for example, by immersing the sealing body 4 in an alkaline solution of 30° C. or higher and 120° C. or lower for 1 to 30 minutes. In addition, as the alkaline solution to be used, a solution generally used for desmear treatment (smear removal solution) can be used, for example, a sodium hydroxide solution containing potassium permanganate, a solution containing sodium permanganate and hydrogen Aqueous solution of sodium oxide, etc. Moreover, as said alkaline solution, the aqueous solution containing potassium hydroxide etc. can also be used in addition to the aqueous solution containing sodium permanganate and sodium hydroxide.

Finally, as an electrode forming step, the electrode 6 electrically connected to the electronic component 2 through the hole 5 is formed. Here, FIG.2(b) shows the cross-sectional view of the state which formed the electrode 6 in the hole 5 formed in the 1st hardened layer 11' in a hole formation process. In addition, FIG.3(b) shows the cross-sectional view of the state which formed the electrode 6 in the hole 5 formed in the 2nd hardened layer 3' in a hole formation process. The formation of the electrode 6 can be performed by a general method. For example, the surface of the sealing body 4 where the hole 5 is formed is plated with a conductive metal such as copper or silver, the hole 5 is buried with the conductive metal, and the surface is covered with the conductive metal. Next, the unnecessary portion of the conductive metal covering the above-mentioned surface is removed by etching or the like, and the conductive metal formed by the buried hole 5 is connected to the buried conductive metal and has a predetermined shape remaining on the above-mentioned surface. Electrode 6 composed of conductive metal. By forming the electrode 6 , together with the sealed electronic component 2 , a semiconductor device including the electrode 6 electrically connected to the electronic component 2 can be obtained.

In the manufacturing method of the semiconductor device of the present embodiment, as described above, the holes 5 can be formed in the desired layers of the first hardened layer 11 ′ and the second hardened layer 3 ′ according to the application of the semiconductor device, and the electrodes 6 can be provided. . Moreover, the hole 5 may be formed in the layers of both the 1st hardened layer 11' and the 2nd hardened layer 3', and the electrode 6 may be provided. Therefore, in the obtained semiconductor device, the electrodes 6 can be easily provided in free positions, and the obtained semiconductor device can be easily three-dimensionally packaged. As a result, the semiconductor device can be easily integrated and functionalized.

Moreover, the manufacturing method of the semiconductor device of this embodiment is applicable to manufacture of a fan-out wafer level package (FOWLP), a fan-out panel level package (FOPLP), a component-embedded substrate, and the like. In particular, since the above-mentioned manufacturing method can seal a plurality of electronic components in one go, the package obtained by this method can be cut at a predetermined position, and a plurality of semiconductor packages can be divided, so that it can be produced efficiently and with a high yield. Semiconductor packaging. That is, the manufacturing method of the semiconductor device of this embodiment can also be used for a method of high efficiency and high yield.

The embodiments described above are described to facilitate understanding of the present invention, and are not described to limit the present invention. Therefore, each element disclosed in the above-described embodiment includes all design changes, equivalents, and the like that belong to the technical scope of the present invention. [Example]

Hereinafter, the present invention will be described in more detail with reference to examples and the like, but the scope of the present invention should not be limited to these examples and the like.

[Manufacture Example 1] (Preparation of Laminated Sheet) (1) Preparation of Adhesive Sheet 40 parts by mass (in terms of solid content, the same below) acrylate copolymer (92.8 mass % of 2-ethylhexyl acrylate, acrylic acid - a copolymer of 7.0 mass 2-hydroxyethyl ester and 0.2 mass % acrylic acid), and 5 parts by mass of hydrogenated polybutadiene at both ends as an adhesion-imparting agent (manufactured by Nippon Soda Co., Ltd., product name "GI-1000") and 3.5 parts by mass of aliphatic isocyanate of hexamethylene isocyanate (manufactured by Nippon Polyurethane Co., Ltd., product name "Coronate HX") as a bridging agent was mixed with methyl ethyl ketone to prepare an adhesive composition with a solid content concentration of 30% by mass. coating liquid.

Next, using a roll coater, the prepared coating liquid was coated on one side of a polyethylene terephthalate film with a release film (manufactured by LINTEC, product name) subjected to release treatment with a silicone-based release layer. "SP-PET382150", thickness: 38 μm), the peeling treatment surface was heated at 90°C for 90 seconds, then heated at 115°C for 90 seconds, and the coating film was dried to form an adhesive layer with a thickness of 50 μm A laminate of an adhesive layer and a release film.

Next, the surface opposite to the release film of the obtained adhesive layer was pasted on a transparent polyethylene terephthalate film (manufactured by Toyobo Co., Ltd., product name "PET50A-4300", thickness of : 50 μm, glass transition temperature Tg: 67°C, thermal shrinkage in MD direction: 1.2%, thermal shrinkage in CD direction: 0.6%) to obtain an adhesive sheet on one side.

In addition, about the obtained adhesive bond layer, the storage elastic modulus at 100 degreeC and the measurement frequency of 1 Hz was measured by the method mentioned later, and it was 2.36*10< ⁵ >Pa. In addition, the adhesive force to the copper foil of the obtained adhesive sheet was measured by the method mentioned later, and it was 1.2 N/25mm. In addition, the adhesive force of the adhesive sheet to the polyimide film was measured by the method described later, and the result was 1.1 N/25 mm. Moreover, the 5% weight reduction temperature of an adhesive bond layer was measured by the method mentioned later, and it was 304 degreeC.

The said storage elastic modulus is measured as follows. Using a plurality of laminates of adhesive layers and release films prepared as described above, the adhesive layers were laminated to a total thickness of 3 mm, and then a cylinder (thickness 3 mm) having a diameter of 8 mm was punched out as a sample. This sample was subjected to a torsional shear method using a viscoelasticity measuring device (manufactured by REOMETRIC, product name "DYNAMIC ANALYZER") in accordance with JIS K7244-6:1999, under the conditions of measurement frequency: 1 Hz and measurement temperature: 100°C, The storage elastic modulus (Pa) was determined.

The adhesive force with respect to the said copper foil was measured as follows. The adhesive sheet produced as described above was cut out to a length of 100 mm and a width of 25 mm, and the peeling film was used as a test piece. , 50%RH), placed for 24 hours. Then, under a standard environment (23°C, 50% RH), using a tensile tester (manufactured by Shimadzu Corporation, product name "AUTOGRAPH AG-IS"), at a peeling angle of 180° and a peeling speed of 300 mm/min, the The adhesive sheet was peeled off, and the adhesive force (mN/25mm) was measured. In addition, the adhesive force to the above-mentioned polyimide film was changed from the copper foil to the polyimide film, which was the object of the adhesive sheet. In addition, the same adhesive force measurement method as above was used to measure

The above-mentioned 5% weight reduction temperature is measured as follows. That is, with respect to the adhesive layer formed as described above, a simultaneous differential thermal and thermogravimetric measuring apparatus (manufactured by Shimadzu Corporation, product name "DTG-60") was used, nitrogen was used as the inflow gas, the gas inflow rate was 100 m1/min, and the temperature was increased. The temperature was increased from 40°C to 550°C at a speed of 20°C/min, and thermogravimetric measurement was performed (in accordance with JIS K7120 "Thermogravimetric measurement method for plastics"). From the obtained thermogravimetric curve, the temperature at which the mass was reduced by 5% with respect to the mass at a temperature of 100°C (5% weight reduction temperature) was determined.

(2) Production of a resin sheet composed of a first resin composition layer and a release film

5.1 parts of bisphenol A-type phenoxy resin (manufactured by Mitsubishi Chemical Corporation, product name "jER1256") as thermoplastic resin, and 5.7 parts of bisphenol A-type epoxy resin (manufactured by Mitsubishi Chemical Corporation, product of thermosetting resin) name "jER828"), 5.7 parts of biphenyl-type epoxy resin as thermosetting resin (manufactured by Nippon Kayaku Co., Ltd., product name "NC-3000-L"), 4.1 parts of naphthalene-type epoxy resin as thermosetting resin Resin (manufactured by DIC Corporation, product name "HP-4700"), 14.3 parts of biphenyl phenol (manufactured by Meiwa Chemical Co., Ltd., product name "MEHC-7851-SS") as thermosetting resin, 0.1 part as imidazole-based curing resin 2-ethyl-4-methylimidazole as a catalyst (manufactured by Shikoku Chemical Co., Ltd., product name "2E4MZ"), and 65 parts of an epoxy silane-treated silica filler as an inorganic filler [silicon dioxide filler Agent (manufactured by ADOMATEX, product name "SO-C2", average particle size: 0.5 μm, maximum particle size: 2 μm, shape: spherical) with 3-glycidoxypropyl trimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., Product name "KBM-403", minimum coating area: 330 m ² /g) surface treatment], mixed with methyl ethyl ketone to obtain a coating liquid of a resin composition with a solid content concentration of 50% by mass. This coating solution was applied to a release film in which an alkyd-based release agent layer was provided on one side of a polyethylene terephthalate film with a thickness of 38 μm (manufactured by LINTEC, product name “SP-PET38AL-5” ), the obtained coating film was dried in an oven at 100° C. for 1 minute to prepare a resin sheet consisting of a 20 μm-thick first resin composition layer and a release film.

(3) Fabrication of Laminated Sheet Next, peel off the release film of the adhesive sheet produced in the above step (1), and separate the exposed surface of the exposed adhesive layer from the resin sheet produced in the above step (2). The surface on the side of the 1st resin composition layer was adhere|attached, and the laminated sheet with a peeling film was obtained.

[Manufacturing Example 2] (Preparation of Sealing Sheet) 5.1 parts of bisphenol A-type phenoxy resin (manufactured by Mitsubishi Chemical Corporation, product name "jER1256") as a thermoplastic resin, and 5.7 parts of bisphenol as a thermosetting resin A-type epoxy resin (manufactured by Mitsubishi Chemical Corporation, product name "jER828"), 5.7 parts of biphenyl-type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., product name "NC-3000-L") as a thermosetting resin, 4.1 parts of naphthalene-type epoxy resin (manufactured by DIC Corporation, product name "HP-4700") as a thermosetting resin, and 14.3 parts of biphenyl-type phenol as a thermosetting resin (manufactured by Meiwa Chemical Co., Ltd., product name "MEHC- 7851-SS"), 0.1 part of 2-ethyl-4-methylimidazole (manufactured by Shikoku Chemical Co., Ltd., product name "2E4MZ") as imidazole-based hardening catalyst, and 65 parts of epoxy group as inorganic filler Silane-treated silica filler [Silicon dioxide filler (manufactured by ADOMATEX, product name "SO-C2", average particle size: 0.5μm, maximum particle size: 2μm, shape: spherical) with 3-glycidyloxygen Propyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., product name "KBM-403", minimum coating area: 330 m ² /g) for surface treatment], mixed with methyl ethyl ketone to obtain a resin with a solid content concentration of 40% by mass The coating liquid of the composition. This coating solution was applied to a release film in which an alkyd-based release agent layer was provided on one side of a polyethylene terephthalate film with a thickness of 38 μm (manufactured by LINTEC, product name “SP-PET38AL-5” ), the obtained coating film was dried in an oven at 100° C. for 1 minute to prepare a sealing sheet composed of a 50 μm-thick second resin composition layer and a release film.

[Example 1] (Electronic Component Mounting Step) First, a frame having a plurality of openings was pasted on the surface of the first resin composition layer side exposed by peeling the release film from the laminate sheet produced in Production Example 1 shape member (made of copper, thickness: 130 μm, size of opening: 8 mm×8 mm). Next, a plurality of semiconductor wafers (5 mm×5 mm, thickness: 130 μm) were prepared, and each of the semiconductor wafers was placed at a predetermined position of each opening of the frame-shaped member. .

(Lamination Step) Next, the surface of the sealing sheet produced in Production Example 2 on the side of the second resin composition layer was heated to 100° C., and laminated on the laminate so as to cover the semiconductor wafer and the frame-shaped member. On the chip, temporarily sticky. Next, the sealing plate was placed in a state of decompression to 2 hPa or less using a vacuum lamination device, and then the heat-resistant rubber was used to press at 90°C and a pressure of 0.1 MPa for 10 seconds, and then the heat-resistant rubber was used. 0.3MPa, pressing for 30 seconds.

(Curing step) After that, the release film was peeled off from the laminated sealing sheet, and the first resin composition layer and the second resin composition layer were cured at 100° C. (T1) for 30 minutes, and then cured at 180° C. (T2) for 60 minutes. minutes, the first hardened layer and the second hardened layer were formed. After that, the adhesive sheet was peeled from the first hardened layer at a peeling angle of 180°.

(Hole Forming Step) The surface of the obtained sealing body on the first hardened layer side was irradiated with a laser using a CO ₂ laser processing machine to form a through hole having a diameter of 100 μm on the sealing body surface reaching the semiconductor wafer.

(Desmear Step) Next, the surface of the sealing body on the side of the second hardened layer (the surface on the opposite side of the surface of the first hardened layer where the through holes are formed) is covered with a protective tape, and then ethylene glycol is mixed. After immersion at 60°C for 5 minutes in an alkaline swelling solution composed of an ether-based solvent and ethylene glycol monobutyl ether, it was immersed in a roughening solution (aqueous alkaline permanganic acid solution) at 80°C for 15 minutes. The solution was immersed in an aqueous solution of sulfuric acid at 40°C for 5 minutes for neutralization, and then dried at 80°C for 5 minutes.

(Electrode Formation Step) Next, the sealing body was immersed in the electroless plating solution at 40°C for 6 minutes, then immersed in the electroless copper plating solution at 25°C for 18 minutes, and then annealed at 150°C for 30 minutes. After that, a photoresist layer for coating film is pasted on the surface of the sealing body on which the through hole is formed, and a region having a predetermined pattern of the photoresist layer for coating film is removed by exposure and development. After that, copper sulfate electroplating was performed, and a layer formed of copper with a thickness of 10 μm was formed in the area removed as described above. Next, an unnecessary electroless copper plating portion is removed by ablation of the remaining photoresist layer for plating to obtain an electrode having a wiring shape. The wiring patterns of the wirings were wiring pattern 1 having a wiring width (L) of 50 μm and a wiring interval (S) of 50 μm, and wiring pattern 2 having a wiring width (L) of 10 μm and a wiring interval (S) of 10 μm. Finally, the protective tape was peeled off, and an annealing treatment was performed at 190° C. for 60 minutes to obtain a sealing body in which an electrode was formed on the first hardened layer.

[Example 2] A sealing body was obtained in the same manner as in Example 1, except that an electrode was formed on the surface on the second cured layer side. That is, an electrode is not formed in the surface on the side of the 1st hardened layer, and the sealing body in which the electrode is formed only on the surface on the side of the 2nd hardened layer is obtained.

[Example 3] In the curing step, except that the curing conditions were to thermally cure the first resin composition layer and the second resin composition layer by one heat treatment at 170° C. (T1) for 30 minutes, the same In Example 1, a sealed body was obtained in the same manner.

[Example 4] In the curing step, a sealing body was obtained in the same manner as in Example 1, except that after curing at 100°C (T1) for 30 minutes and then curing at 150°C (T2) for 30 minutes.

[Test Example 1] (Measurement of Reaction Rate) The first resin composition layer obtained by peeling the release film from the resin sheet produced in Production Example 1 was subjected to a differential scanning calorimeter (DSC) under the following conditions, and measured The calorific value (integrated amount) due to thermal curing of the first resin composition. The calorific value thus measured is represented by ΔH0 (kJ). Differential Scanning Calorimeter (DSC) Device: TA INSTRUMENT Co., Ltd. Heating rate: 10℃/mn Temperature range: 50℃~300℃

In addition, the resin sheet produced in Production Example 1 was subjected to the same conditions as the thermal curing in the curing step of the first sealing sheet of Example 1 [after curing at 100° C. (T1) for 30 minutes, then at 180° C. (T2) ) Curing for 60 minutes] After thermal curing, the first cured layer obtained by peeling the release film was subjected to a differential scanning calorimeter (DSC) under the same conditions as above to measure the heat generation of the first cured layer due to thermal curing. amount (integral amount). The measured calorific value is represented by ΔH1 (kJ).

Then, using the measured ΔH0 (kJ) and ΔH1 (kJ), the reaction rate (%) of the first hardened layer in Example 1 was calculated by the following formula. The results are shown in Table 1. Response rate (%)=(ΔH0-ΔH1)/ΔH×100

Moreover, with respect to the sealing sheet produced in the same manner as in Production Example 2, the calorific value ΔH0 (kJ) of the second resin composition layer obtained by peeling off the release film was measured in the same manner as described above. In addition, the second sealing sheet produced in the same manner as in Production Example 2 was subjected to the same conditions as the thermal hardening in the hardening step of Example 1 [after hardening at 100° C. (T1) for 30 minutes, then at 180° C. (T2) Curing for 60 minutes] After thermal curing, the calorific value ΔH1 (kJ) of the second cured layer obtained by peeling off the release film was measured in the same manner as described above. Then, from the measured ΔH0 (kJ) and ΔH1 (kJ), it was calculated in the same manner as described above, and the reaction rate (%) of the second hardened layer in Example 1 was calculated. The results are shown in Table 1.

In addition, except having changed the thermosetting conditions at the time of measuring the above-mentioned calorific value ΔH1 (kJ) to the conditions described in the respective Examples, the first hardened layers of Examples 2 to 4 were calculated in the same manner as the above-mentioned method. The reaction rate (%) and the reaction rate (%) of the second hardened layer. These results are also shown in Table 1.

[Test Example 2] (Measurement of Arithmetic Average Roughness)

The sealing body (sealing body including the semiconductor wafer sealed with the first cured layer and the second cured layer) obtained in the curing step of the manufacturing methods of Examples 1 to 4 and before the hole formation step is performed, is first cured The surface of the layer and the second hardened layer was measured in accordance with JIS B0601-1994 using a contact roughness meter (manufactured by Mitutoyo, product name "SV3000S4") to measure the arithmetic mean roughness Ra (nm). The results are shown in Table 1.

[Test Example 3] (Evaluation of Electrode Formability)

The wiring pattern 1 (L/S=50 μm/50 μm) and the wiring pattern 2 (L/S=10 μm/10 μm) of the sealing body produced in the Example were performed using a digital microscope (manufactured by KEYENCE Corporation, product name “VHX-100”) By observation, the electrode formability was evaluated according to the following criteria.

A: A predetermined wiring pattern is formed.

B: Partially deviated from the predetermined wiring pattern.

C: Deviation from a predetermined wiring pattern occurs, and contact (short circuit) between wirings also occurs.

According to the manufacturing method of the embodiment, it was confirmed that the steps from the wafer mounting step to the electrode formation on the sealing resin can be efficiently performed with very simple work contents. In addition, as shown in Table 1, it was confirmed that electrodes having favorable wiring patterns could be formed on any surface of the sealing body. Thereby, high integration and high functionality of the semiconductor device can be achieved. Thereby, regarding the manufacturing method of an Example, an electronic component can be sealed well, and a semiconductor device can also be manufactured well. [Industrial Profitability]

The manufacturing method of the semiconductor device of this invention can be utilized suitably for manufacture of semiconductor devices, such as a wafer embedded substrate, a fan-out type wafer level package, and a fan-out type panel level package.

1‧‧‧Laminated sheets 11‧‧‧First resin composition layer 11'‧‧‧First hardened layer 12‧‧‧Adhesive sheet 2‧‧‧Electronic parts 3‧‧‧Second resin composition layer 3 '‧‧‧Second hardened layer 4‧‧‧Sealing body 5‧‧‧hole 6‧‧‧electrode

FIG. 1 is a cross-sectional view illustrating a part of a method for manufacturing a semiconductor device according to an embodiment of the present invention. 2 is a cross-sectional view illustrating a part of a method for manufacturing a semiconductor device according to an embodiment of the present invention. 3 is a cross-sectional view illustrating a part of a method for manufacturing a semiconductor device according to an embodiment of the present invention.

1‧‧‧Laminated plate

11‧‧‧First resin composition layer

11'‧‧‧First hardened layer

12‧‧‧Adhesive plate

2‧‧‧Electronic parts

3‧‧‧Second resin composition layer

3'‧‧‧Second hardened layer

Claims (16)

A method of manufacturing a semiconductor device, comprising: a step of placing electronic components on an adhesive sheet including a base material and an adhesive layer laminated on one side of the base material, and an adhesive sheet laminated on the adhesive sheet One or more electronic components are placed on the surface of the build-up sheet of the curable first resin composition layer on the side of the adhesive layer side on the first resin composition layer side; in the lamination step, The second resin composition layer of the sealing sheet having at least a curable second resin composition layer is laminated in such a manner as to cover at least the electronic component while being in contact with the first resin composition layer; 1. A first hardened layer formed by hardening a resin composition layer, a second hardened layer formed by hardening the above-mentioned second resin composition layer, and the above-mentioned electronic component sealed by the above-mentioned first hardened layer and the above-mentioned second hardened layer, A sealing body obtained by peeling off the above-mentioned adhesive sheet at the same time; a hole forming step of forming a hole that exposes a part of the surface of the electronic component, which is a hole penetrating through at least one of the first hardened layer and the second hardened layer; The step of removing glue residue is to remove the glue residue from the above-mentioned sealing body that forms the above-mentioned holes; and the step of electrode formation is to form electrodes electrically connected with the above-mentioned electronic parts through the above-mentioned holes, wherein the above-mentioned base material is selected from polyester film, polyamide Olefin film, cellophane, cellulose diacetate film, cellulose triacetate film, cellulose acetate butyrate film, polyvinyl chloride film, polyvinylidene chloride film, polyvinyl alcohol film, ethylene-acetate-vinyl copolymer film, Polystyrene film, polycarbonate film, polymethylpentene film, polysilicon film, polyetheretherketone film, polyethersilver film, polyetherimide film, polyimide film, fluororesin film, poly At least one of an amide film, an acrylic resin film, a norbornene-based resin film, a cycloolefin resin film, a polyphenylene sulfide compound film, and a liquid crystal polymer film The above-mentioned base material has a thickness of 10 μm or more and 100 μm or less, and the above-mentioned adhesive layer is composed of a non-energy ray-curable adhesive. A method of manufacturing a semiconductor device, comprising: a step of placing electronic components on an adhesive sheet including a base material and an adhesive layer laminated on one side of the base material, and an adhesive sheet laminated on the adhesive sheet One or more electronic components are placed on the surface of the build-up sheet of the curable first resin composition layer on the side of the adhesive layer side on the first resin composition layer side; in the lamination step, The second resin composition layer of the sealing sheet having at least a curable second resin composition layer is laminated in such a manner as to cover at least the electronic component while being in contact with the first resin composition layer; 1. A first hardened layer formed by hardening a resin composition layer, a second hardened layer formed by hardening the above-mentioned second resin composition layer, and the above-mentioned electronic component sealed by the above-mentioned first hardened layer and the above-mentioned second hardened layer, A sealing body obtained by peeling off the above-mentioned adhesive sheet at the same time; a hole forming step of forming a hole that exposes a part of the surface of the electronic component, which is a hole penetrating through at least one of the first hardened layer and the second hardened layer; The step of removing glue residue is to remove the glue residue from the above-mentioned sealing body that forms the above-mentioned holes; and the step of electrode formation is to form electrodes electrically connected with the above-mentioned electronic parts through the above-mentioned holes, wherein the above-mentioned base material is selected from polyester film, polyamide Olefin film, cellophane, cellulose diacetate film, cellulose triacetate film, cellulose acetate butyrate film, polyvinyl chloride film, polyvinylidene chloride film, polyvinyl alcohol film, ethylene-acetate-vinyl copolymer film, Polystyrene film, polycarbonate film, polymethylpentene film, polysilicon film, polyetheretherketone film, polyethersilver film, polyetherimide film, polyether At least one of an imide film, a fluororesin film, a polyamide film, an acrylic resin film, a norbornene-based resin film, a cycloolefin resin film, a polyphenylene sulfide compound film, and a liquid crystal polymer film, the above-mentioned substrate The thickness is 10 μm or more and 100 μm or less, and in the above-mentioned hardening step, the above-mentioned adhesive sheet is peeled at a peeling angle of 180°. The method for manufacturing a semiconductor device according to claim 1 or claim 2, wherein the curing of the first resin composition layer and the curing of the second resin composition layer are performed simultaneously, and the adhesive sheet is The peeling is performed after hardening of the said 1st resin composition layer and the said 2nd resin composition layer. The method for manufacturing a semiconductor device according to claim 1 or claim 2, wherein at least one of the first cured layer and the second cured layer exhibits insulating properties. The method for manufacturing a semiconductor device according to claim 1 or claim 2, wherein at least one of the first resin composition layer and the second resin composition layer is cured by heat treatment. The method of manufacturing a semiconductor device according to claim 5, wherein the heat treatment is performed stepwise by a plurality of heat treatments. The method of manufacturing a semiconductor device according to claim 6, wherein the heat treatment is performed by a first heat treatment for thermal curing at a temperature T1 and a second heat treatment for thermal curing at a temperature T2 higher than the temperature T1 Processing proceeds. The method for manufacturing a semiconductor device according to claim 1 or claim 2, wherein the curing of the first resin composition layer is performed so that the reaction rate of the first cured layer becomes 85% or more . The method for manufacturing a semiconductor device according to claim 1 or claim 2, wherein the curing of the second resin composition layer is performed so that the reaction rate of the second cured layer becomes 85% or more . The method for manufacturing a semiconductor device according to claim 1 or claim 2, wherein at least one of the first resin composition layer and the second resin composition layer is composed of a resin composition containing a thermosetting resin matter formation. The method for manufacturing a semiconductor device according to claim 10, wherein the resin composition contains an inorganic filler. The method for manufacturing a semiconductor device according to claim 11, wherein the inorganic filler is surface-treated with a surface-treating agent whose minimum coverage area is less than 550 m ² /g. The method of manufacturing a semiconductor device according to claim 10, wherein the first resin composition layer and the second resin composition layer are formed of the resin composition having the same composition. The method for manufacturing a semiconductor device according to claim 1 or claim 2, wherein the thickness of the first resin composition layer is 1 μm or more and 100 μm or less. The method for manufacturing a semiconductor device according to claim 1 or claim 2, wherein the thickness of the second resin composition layer is 50 μm or more and 1000 μm or less. A laminated sheet, which can be used in the method for manufacturing a semiconductor device described in claim 1 or claim 2, comprising: a base material and an adhesive layer laminated on one side of the base material. A sheet, and a curable first resin composition layer laminated on the surface of the adhesive sheet on the side of the adhesive layer.

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