TWI757667B - Boost converter - Google Patents
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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本發明係關於一種升壓轉換器,特別係關於一種高輸出效率之升壓轉換器。The present invention relates to a boost converter, especially a boost converter with high output efficiency.
在傳統升壓轉換器中,其升壓電感器容易與功率切換器之寄生電容器發生共振,並產生逆向之電感電流。此種逆向之電感電流會以熱能形式造成功率消耗(以下簡稱「熱消耗」),同時導致升壓轉換器之輸出效率變低。有鑑於此,勢必要提出一種全新之解決方案,以克服先前技術所面臨之困境。In conventional boost converters, the boost inductors tend to resonate with the parasitic capacitors of the power switch and generate reverse inductor currents. Such reversed inductor current will cause power dissipation in the form of thermal energy (hereinafter referred to as "heat dissipation"), and at the same time will result in lower output efficiency of the boost converter. In view of this, it is necessary to propose a new solution to overcome the difficulties faced by the previous technology.
在較佳實施例中,本發明提出一種升壓轉換器,包括:一電感器,用於接收一輸入電位;一第一切換器,內建一第一寄生電容器,其中該第一切換器係根據一時脈電位來選擇性地將該電感器耦接至一第一共同節點;一輸出級電路,用於產生一輸出電位;一補償電容器,耦接至該第一寄生電容器;一第二切換器,內建一第二寄生電容器,其中該第二切換器係根據一控制電位來選擇性地將該補償電容器耦接至該第一共同節點;一第三切換器,內建一第三寄生電容器,其中該第三切換器係根據該控制電位來選擇性地將該補償電容器耦接至該輸出級電路;以及一控制器,根據該輸出電位來產生該控制電位。In a preferred embodiment, the present invention provides a boost converter, comprising: an inductor for receiving an input potential; a first switch with a built-in first parasitic capacitor, wherein the first switch is selectively coupling the inductor to a first common node according to a clock potential; an output stage circuit for generating an output potential; a compensation capacitor coupled to the first parasitic capacitor; a second switching a second switch with a built-in second parasitic capacitor, wherein the second switch selectively couples the compensation capacitor to the first common node according to a control potential; a third switch with a built-in third parasitic a capacitor, wherein the third switch selectively couples the compensation capacitor to the output stage circuit according to the control potential; and a controller generates the control potential according to the output potential.
為讓本發明之目的、特徵和優點能更明顯易懂,下文特舉出本發明之具體實施例,並配合所附圖式,作詳細說明如下。In order to make the objects, features and advantages of the present invention more obvious and easy to understand, specific embodiments of the present invention are given in the following, and are described in detail as follows in conjunction with the accompanying drawings.
在說明書及申請專利範圍當中使用了某些詞彙來指稱特定的元件。本領域技術人員應可理解,硬體製造商可能會用不同的名詞來稱呼同一個元件。本說明書及申請專利範圍並不以名稱的差異來作為區分元件的方式,而是以元件在功能上的差異來作為區分的準則。在通篇說明書及申請專利範圍當中所提及的「包含」及「包括」一詞為開放式的用語,故應解釋成「包含但不僅限定於」。「大致」一詞則是指在可接受的誤差範圍內,本領域技術人員能夠在一定誤差範圍內解決所述技術問題,達到所述基本之技術效果。此外,「耦接」一詞在本說明書中包含任何直接及間接的電性連接手段。因此,若文中描述一第一裝置耦接至一第二裝置,則代表該第一裝置可直接電性連接至該第二裝置,或經由其它裝置或連接手段而間接地電性連接至該第二裝置。Certain terms are used throughout the specification and claims to refer to particular elements. It should be understood by those skilled in the art that hardware manufacturers may refer to the same element by different nouns. This specification and the scope of the patent application do not use the difference in name as a way to distinguish elements, but use the difference in function of the elements as a criterion for distinguishing. The words "including" and "including" mentioned in the entire specification and the scope of the patent application are open-ended terms, so they should be interpreted as "including but not limited to". The word "substantially" means that within an acceptable error range, those skilled in the art can solve the technical problem within a certain error range and achieve the basic technical effect. Furthermore, the term "coupled" in this specification includes any direct and indirect electrical connection means. Therefore, if a first device is described as being coupled to a second device, it means that the first device can be directly electrically connected to the second device, or indirectly electrically connected to the second device through other devices or connecting means. Second device.
第1圖係顯示根據本發明一實施例所述之升壓轉換器100之示意圖。升壓轉換器100可應用於一行動裝置,例如:桌上型電腦、筆記型電腦,或一體成形電腦。如第1圖所示,升壓轉換器100包括:一電感器L1、一補償電容器CM、一第一切換器110、一第二切換器120、一第三切換器130、一控制器140,以及一輸出級電路150,其中第一切換器110內建一第一寄生電容器CP1,第二切換器120內建一第二寄生電容器CP2,而第三切換器130內建一第三寄生電容器CP3。必須注意的是,雖然未顯示於第1圖中,但升壓轉換器100更可包括其他元件,例如:一穩壓器或(且)一負回授電路。FIG. 1 shows a schematic diagram of a
電感器L1可視為升壓轉換器100之一升壓電感器。電感器L1係用於接收一輸入電位VIN。輸入電位VIN可來自一外部電源,其中輸入電位VIN可為具有任意頻率和任意振幅之一交流電位。例如,交流電位之頻率可約為50Hz或60Hz,而交流電位之方均根值可約為110V或220V。在另一些實施例中,輸入電位VIN亦可改為一直流電位,其電位位準可介於90V至264V之間。第一切換器110可視為升壓轉換器100之一功率切換器。第一切換器110可根據一時脈電位VA來選擇性地將電感器L1耦接至一第一共同節點NC1。例如,若時脈電位VA為高邏輯位準(例如:邏輯「1」),則第一切換器110即將電感器L1耦接至第一共同節點NC1(亦即,第一切換器110可近似於一短路路徑);反之,若時脈電位VA為低邏輯位準(例如:邏輯「0」),則第一切換器110不會將電感器L1耦接至第一共同節點NC1(亦即,第一切換器110可近似於一開路路徑)。第一切換器110之二端之間之總寄生電容可模擬為前述之第一寄生電容器CP1,其並非一外部獨立元件。時脈電位VA於升壓轉換器100初始化時可維持於一固定電位,而在升壓轉換器100進入正常使用階段後則可提供週期性之時脈波形。補償電容器CM係耦接至第一切換器110及其第一寄生電容器CP1。第二切換器120可根據一控制電位VC來選擇性地將補償電容器CM耦接至第一共同節點NC1。例如,若控制電位VC為高邏輯位準,則第二切換器120即將補償電容器CM耦接至第一共同節點NC1(亦即,第二切換器120可近似於一短路路徑);反之,若控制電位VC為低邏輯位準,則第二切換器120不會將補償電容器CM耦接至第一共同節點NC1(亦即,第二切換器120可近似於一開路路徑)。第二切換器120之二端之間之總寄生電容可模擬為前述之第二寄生電容器CP2,其並非一外部獨立元件。第三切換器130可根據控制電位VC來選擇性地將補償電容器CM耦接至輸出級電路150。例如,若控制電位VC為高邏輯位準,則第三切換器130即將補償電容器CM耦接至輸出級電路150(亦即,第三切換器130可近似於一短路路徑);反之,若控制電位VC為低邏輯位準,則第三切換器130不會將補償電容器CM耦接至輸出級電路150(亦即,第三切換器130可近似於一開路路徑)。第三切換器130之二端之間之總寄生電容可模擬為前述之第三寄生電容器CP3,其並非一外部獨立元件。輸出級電路150係用於產生一輸出電位VOUT。輸出電位VOUT可為一直流電位,其中輸出電位VOUT之電位位準係高於輸入電位VIN之最大值。控制器140係根據輸出電位VOUT來產生控制電位VC。必須注意的是,當通過電感器L1之一電感電流IL恰好下降至零時,第一寄生電容器CP1可經由補償電容器CM耦接至第二寄生電容器CP2和第三寄生電容器CP3,以降低升壓轉換器100之總等效電容值。根據實際量測結果,此種電路設計方式可防止升壓轉換器100之電感器L1因非理想之逆向電流而產生熱消耗,故能提高升壓轉換器100之輸出效率。The inductor L1 can be considered as one of the boost inductors of the
以下實施例將介紹升壓轉換器100之詳細結構及操作方式。必須理解的是,這些圖式和敘述僅為舉例,而非用於限制本發明之範圍。The following embodiments will introduce the detailed structure and operation of the
第2圖係顯示根據本發明一實施例所述之升壓轉換器200之示意圖。在第2圖之實施例中,升壓轉換器200具有一輸入節點NIN和一輸出節點NOUT,並包括一電感器L1、一補償電容器CM、一第一切換器210、一第二切換器220、一第三切換器230、一控制器240,以及一輸出級電路250,其中第一切換器210內建一第一寄生電容器CP1,第二切換器220內建一第二寄生電容器CP2,而第三切換器230內建一第三寄生電容器CP3。升壓轉換器200之輸入節點NIN可由一外部電源處接收一輸入電位VIN,而升壓轉換器200之輸出節點NOUT可用於輸出一輸出電位VOUT,其中輸出電位VOUT之電位位準係高於輸入電位VIN之最大值。FIG. 2 shows a schematic diagram of a
電感器L1之第一端係耦接至輸入節點NIN,而電感器L1之第二端係耦接至一第一節點N1。The first end of the inductor L1 is coupled to the input node NIN, and the second end of the inductor L1 is coupled to a first node N1.
第一切換器210包括一第一電晶體M1。第一電晶體M1可為N型金氧半場效電晶體。第一電晶體M1之控制端係用於接收一時脈電位VA,第一電晶體M1之第一端係耦接至一第一共同節點NC1,而第一電晶體M1之第二端係耦接至第一節點N1。例如,時脈電位VA於升壓轉換器200初始化時可維持於一固定電位(例如:一接地電位0V),而在升壓轉換器200進入正常使用階段後則可提供週期性之時脈波形。第一電晶體M1之第一端和第二端之間之總寄生電容可模擬為前述之第一寄生電容器CP1,其並非一外部獨立元件。第一寄生電容器CP1之第一端係耦接至第一節點N1,而第一寄生電容器CP1之第二端係耦接至第一共同節點NC1。The
補償電容器CM之第一端係耦接至第一共同節點NC1,而補償電容器CM之第二端係耦接至一第二節點N2。在一些實施例中,第一共同節點NC1更耦接至大地,但亦不僅限於此。The first end of the compensation capacitor CM is coupled to the first common node NC1, and the second end of the compensation capacitor CM is coupled to a second node N2. In some embodiments, the first common node NC1 is further coupled to the ground, but it is not limited thereto.
第二切換器220包括一第二電晶體M2。第二電晶體M2可為N型金氧半場效電晶體。第二電晶體M2之控制端係耦接至一第三節點N3以接收一控制電位VC,第二電晶體M2之第一端係耦接至第一共同節點NC1,而第二電晶體M2之第二端係耦接至第二節點N2。第二電晶體M2之第一端和第二端之間之總寄生電容可模擬為前述之第二寄生電容器CP2,其並非一外部獨立元件。第二寄生電容器CP2之第一端係耦接至第二節點N2,而第二寄生電容器CP2之第二端係耦接至第一共同節點NC1。The
輸出級電路250包括一二極體D1和一輸出電容器CO。二極體D1之陽極係耦接至第一節點N1,而二極體D1之陰極係耦接至輸出節點NOUT。輸出電容器CO之第一端係耦接至輸出節點NOUT,而輸出電容器CO之第二端係耦接至一第二共同節點NC2。在一些實施例中,第二共同節點NC2更耦接至接地電位,但亦不僅限於此。The
第三切換器230包括一第三電晶體M3。第三電晶體M3可為N型金氧半場效電晶體。第三電晶體M3之控制端係耦接至第三節點N3以接收控制電位VC,第三電晶體M3之第一端係耦接至第二節點N2,而第三電晶體M3之第二端係耦接至輸出節點NOUT。第三電晶體M3之第一端和第二端之間之總寄生電容可模擬為前述之第三寄生電容器CP3,其並非一外部獨立元件。第三寄生電容器CP3之第一端係耦接至第二節點N2,而第三寄生電容器CP3之第二端係耦接至輸出節點NOUT。The
控制器240包括一分壓電路241、一比較器242,以及一感測電阻器RS。分壓電路241包括一第一電阻器R1和一第二電阻器R2。第一電阻器R1之第一端係耦接至輸出節點NOUT,而第一電阻器R1之第二端係耦接至一第四節點N4。第二電阻器R2之第一端係耦接至第四節點N4,而第二電阻器R2之第二端係耦接至第二共同節點NC2。分壓電路241可於第四節點N4處提供一參考電位VR。感測電阻器RS之第一端係耦接至第一共同節點NC1,而感測電阻器RS之第二端係耦接至第二共同節點NC2。感測電阻器RS可於第二共同節點NC2處提供一感測電位VS。比較器242之正輸入端係耦接至第四節點N4以接收參考電位VR,比較器242之負輸入端係耦接至第二共同節點NC2以接收感測電位VS,而比較器242之輸出端係耦接至第三節點N3以輸出控制電位VC。The
在一些實施例中,升壓轉換器200係依序操作於一第一模式、一第二模式、一第三模式,以及一第四模式,其詳細操作原理可如下列所述。In some embodiments, the
在第一模式中,升壓轉換器200為初始化狀態,此時第一電晶體M1、第二電晶體M2,以及第三電晶體M3皆為禁能。In the first mode, the
在第二模式中,時脈電位VA為高邏輯位準,故第一電晶體M1為致能且二極體D1為禁能,而通過電感器L1之一電感電流IL係逐漸上升。由於二極體D1為禁能,感測電阻器RS將沒有任何電流通過,而不作動之控制器240將使第二電晶體M2和第三電晶體M3皆為禁能。In the second mode, the clock potential VA is at a high logic level, so the first transistor M1 is enabled and the diode D1 is disabled, and an inductor current IL through the inductor L1 increases gradually. Since the diode D1 is disabled, the sense resistor RS will not pass any current, and the
在第三模式中,時脈電位VA為低邏輯位準,故第一電晶體M1為禁能且二極體D1為致能,而通過電感器L1之電感電流IL係逐漸下降。電感電流IL再經由二極體D1流至感測電阻器RS,使得感測電阻器RS可產生感測電位VS。另外,輸出電容器CO之輸出電位VOUT係由第一電阻器R1和第二電阻器R2進行分壓操作,使得分壓電路241可產生參考電位VR。因為在第三模式中感測電位VS會高於參考電位VR,故控制器240將輸出低邏輯位準之控制電位VC以禁能第二電晶體M2和第三電晶體M3。In the third mode, the clock potential VA is at a low logic level, so the first transistor M1 is disabled and the diode D1 is enabled, and the inductor current IL through the inductor L1 decreases gradually. The inductor current IL then flows to the sensing resistor RS through the diode D1, so that the sensing resistor RS can generate the sensing potential VS. In addition, the output potential VOUT of the output capacitor CO is divided by the first resistor R1 and the second resistor R2, so that the
在第四模式中,通過電感器L1之電感電流IL恰好下降至零,使得感測電阻器RS之感測電位VS亦下降至零。因為在第四模式中感測電位VS會低於參考電位VR,故控制器240將輸出高邏輯位準之控制電位VC以致能第二電晶體M2和第三電晶體M3。第3圖係顯示根據本發明一實施例所述之升壓轉換器200(操作於第四模式)之等效電路圖。第一寄生電容器CP1、第二寄生電容器CP2、第三寄生電容器CP3、補償電容器CM,以及輸出電容器CO之總等效電容值可如下列方程式(1)所述:In the fourth mode, the inductor current IL through the inductor L1 just drops to zero, so that the sensing potential VS of the sensing resistor RS also drops to zero. Since the sensing potential VS is lower than the reference potential VR in the fourth mode, the
…………………………….(1) 其中「CT」代表總等效電容值,「CP1」代表第一寄生電容器CP1之電容值,「CP2」代表第二寄生電容器CP2之電容值,「CP3」代表第三寄生電容器CP3之電容值,「CM」代表補償電容器CM之電容值,而CO代表輸出電容器CO之電容值。 ………………………….(1) “CT” represents the total equivalent capacitance value, “CP1” represents the capacitance value of the first parasitic capacitor CP1, and “CP2” represents the capacitance of the second parasitic capacitor CP2 "CP3" represents the capacitance value of the third parasitic capacitor CP3, "CM" represents the capacitance value of the compensation capacitor CM, and CO represents the capacitance value of the output capacitor CO.
根據第3圖和方程式(1),當控制電位VC致能第二電晶體M2和第三電晶體M3時(亦即,當通過電感器L1之電感電流IL恰好下降至零時),第一寄生電容器CP1將經由補償電容器CM耦接至第二寄生電容器CP2、第三寄生電容器CP3,以及輸出電容器CO,使得第一寄生電容器CP1、第二寄生電容器CP2、第三寄生電容器CP3、補償電容器CM,以及輸出電容器CO之總等效電容值趨近於零。在此設計下,第一切換器110可視為幾乎無寄生電容,其可有效避免電感器L1與第一寄生電容器CP1兩者共振時所產生之非理想特性。According to FIG. 3 and equation (1), when the control potential VC enables the second transistor M2 and the third transistor M3 (ie, when the inductor current IL through the inductor L1 just drops to zero), the first The parasitic capacitor CP1 will be coupled to the second parasitic capacitor CP2, the third parasitic capacitor CP3, and the output capacitor CO via the compensation capacitor CM, such that the first parasitic capacitor CP1, the second parasitic capacitor CP2, the third parasitic capacitor CP3, the compensation capacitor CM , and the total equivalent capacitance value of the output capacitor CO approaches zero. Under this design, the
第4圖係顯示傳統升壓轉換器之電感電流之波形圖。如第4圖所示,傳統升壓轉換器之電感電流具有一些非理想之逆向部份(如虛線框所示),其將造成不必要之熱消耗。第5圖係顯示根據本發明一實施例所述之升壓轉換器200之電感電流IL之波形圖。根據第5圖之量測結果,在使用所提之補償電容器CM和對應之切換器後,本發明之升壓轉換器200將能產生完全無逆向之電感電流IL,其不僅能降低熱消耗,更可大幅提高升壓轉換器200之輸出效率。FIG. 4 is a waveform diagram showing the inductor current of a conventional boost converter. As shown in Figure 4, the inductor current of a conventional boost converter has some non-ideal inverse parts (as shown by the dotted box), which will cause unnecessary heat dissipation. FIG. 5 is a waveform diagram of the inductor current IL of the
在一些實施例中,升壓轉換器200之元件參數可如下列所述。第一寄生電容器CP1之電容值可介於297pF至303pF之間,較佳為300pF。第二寄生電容器CP2之電容值可介於297pF至303pF之間,較佳為300pF。第三寄生電容器CP3之電容值可介於297pF至303pF之間,較佳為300pF。補償電容器CM之電容值可介於9.9pF至10.1pF之間,較佳為10pF。輸出電容器CO之電容值可介於2700μF至3300μF之間,較佳為3000μF。電感器L1之電感值可介於190μH至210μH之間,較佳為200μH。第一電阻器R1之電阻值可約等於3999Ω。第二電阻器R2之電阻值可約等於1Ω。偵測電阻器RS之電阻值可約等於1Ω。參考電位VR可約等於0.1V。時脈電位VA之切換頻率可約為65kHz。以上參數範圍係根據多次實驗結果而得出,其有助於最佳化升壓轉換器200之轉換效率。In some embodiments, the component parameters of the
本發明提出一種新穎之升壓轉換器,其包括補償電容器和對應之切換器。根據實際量測結果,使用前述設計之升壓轉換器可大幅降低非理想之逆向電感電流。大致而言,本發明可有效提高升壓轉換器之輸出效率,故其很適合應用於各種各式之電子裝置當中。The present invention proposes a novel boost converter comprising a compensation capacitor and a corresponding switch. According to the actual measurement results, using the boost converter of the above design can greatly reduce the non-ideal reverse inductor current. Generally speaking, the present invention can effectively improve the output efficiency of the boost converter, so it is very suitable for application in various electronic devices.
值得注意的是,以上所述之電位、電流、電阻值、電感值、電容值,以及其餘元件參數均非為本發明之限制條件。設計者可以根據不同需要調整這些設定值。本發明之升壓轉換器並不僅限於第1-5圖所圖示之狀態。本發明可以僅包括第1-5圖之任何一或複數個實施例之任何一或複數項特徵。換言之,並非所有圖示之特徵均須同時實施於本發明之升壓轉換器當中。雖然本發明之實施例係使用金氧半場效電晶體為例,但本發明並不僅限於此,本技術領域人士可改用其他種類之電晶體,例如:接面場效電晶體,或是鰭式場效電晶體等等,而不致於影響本發明之效果。It should be noted that the potential, current, resistance value, inductance value, capacitance value and other component parameters mentioned above are not limitations of the present invention. Designers can adjust these settings according to different needs. The boost converter of the present invention is not limited to the states illustrated in FIGS. 1-5. The present invention may include only any one or more of the features of any one or more of the embodiments of Figures 1-5. In other words, not all of the features shown must be simultaneously implemented in the boost converter of the present invention. Although the embodiments of the present invention use MOSFETs as an example, the present invention is not limited to this, and those skilled in the art can use other types of transistors, such as junction field effect transistors, or fins type field effect transistor, etc., without affecting the effect of the present invention.
在本說明書以及申請專利範圍中的序數,例如「第一」、「第二」、「第三」等等,彼此之間並沒有順序上的先後關係,其僅用於標示區分兩個具有相同名字之不同元件。The ordinal numbers in this specification and the scope of the patent application, such as "first", "second", "third", etc., do not have a sequential relationship with each other, and are only used to mark and distinguish two identical different elements of the name.
本發明雖以較佳實施例揭露如上,然其並非用以限定本發明的範圍,任何熟習此項技藝者,在不脫離本發明之精神和範圍內,當可做些許的更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention is disclosed above with preferred embodiments, it is not intended to limit the scope of the present invention. Anyone skilled in the art can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the scope of the appended patent application.
100、200:升壓轉換器
110、210:第一切換器
120、220:第二切換器
130、230:第三切換器
140、240:控制器
150、250:輸出級電路
241:分壓電路
242:比較器
CM:補償電容器
CO:輸出電容器
CP1:第一寄生電容器
CP2:第二寄生電容器
CP3:第三寄生電容器
D1:二極體
IL:電感電流
L1:電感器
M1:第一電晶體
M2:第二電晶體
M3:第三電晶體
N1:第一節點
N2:第二節點
N3:第三節點
N4:第四節點
NC1:第一共同節點
NC2:第二共同節點
NIN:輸入節點
NOUT:輸出節點
R1:第一電阻器
R2:第二電阻器
RS:感測電阻器
VA:時脈電位
VC:控制電位
VIN:輸入電位
VOUT:輸出電位
VR:參考電位
VS:感測電位100, 200: Boost
第1圖係顯示根據本發明一實施例所述之升壓轉換器之示意圖。 第2圖係顯示根據本發明一實施例所述之升壓轉換器之示意圖。 第3圖係顯示根據本發明一實施例所述之升壓轉換器之等效電路圖。 第4圖係顯示傳統升壓轉換器之電感電流之波形圖。 第5圖係顯示根據本發明一實施例所述之升壓轉換器之電感電流之波形圖。FIG. 1 shows a schematic diagram of a boost converter according to an embodiment of the present invention. FIG. 2 shows a schematic diagram of a boost converter according to an embodiment of the present invention. FIG. 3 shows an equivalent circuit diagram of a boost converter according to an embodiment of the present invention. FIG. 4 is a waveform diagram showing the inductor current of a conventional boost converter. FIG. 5 is a waveform diagram showing the inductor current of the boost converter according to an embodiment of the present invention.
100:升壓轉換器100: Boost Converter
110:第一切換器110: First switcher
120:第二切換器120: Second switcher
130:第三切換器130: Third Switcher
140:控制器140: Controller
150:輸出級電路150: Output stage circuit
CM:補償電容器CM: Compensation capacitor
CP1:第一寄生電容器CP1: first parasitic capacitor
CP2:第二寄生電容器CP2: Second Parasitic Capacitor
CP3:第三寄生電容器CP3: Third Parasitic Capacitor
IL:電感電流IL: inductor current
L1:電感器L1: Inductor
NC1:第一共同節點NC1: first common node
VA:時脈電位VA: clock potential
VC:控制電位VC: control potential
VIN:輸入電位VIN: input potential
VOUT:輸出電位VOUT: output potential
Claims (9)
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI844324B (en) * | 2023-03-30 | 2024-06-01 | 宏碁股份有限公司 | Boost converter with high conversion efficiency |
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| US6229293B1 (en) * | 1999-10-08 | 2001-05-08 | National Semiconductor Corporation | DC-to-DC converter with current mode switching controller that produces ramped voltage with adjustable effective ramp rate |
| TW200828760A (en) * | 2006-12-27 | 2008-07-01 | Acbel Polytech Inc | Voltage-transforming circuit |
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| WO2019062782A1 (en) * | 2017-09-27 | 2019-04-04 | 嘉兴山蒲照明电器有限公司 | Light-emitting diode straight tube lamp and light-emitting diode illumination system |
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|---|---|---|---|---|
| US6229293B1 (en) * | 1999-10-08 | 2001-05-08 | National Semiconductor Corporation | DC-to-DC converter with current mode switching controller that produces ramped voltage with adjustable effective ramp rate |
| TW200828760A (en) * | 2006-12-27 | 2008-07-01 | Acbel Polytech Inc | Voltage-transforming circuit |
| CN103986421A (en) * | 2013-02-08 | 2014-08-13 | 英飞凌科技股份有限公司 | Input Matching Networks for Power Circuits |
| WO2019062782A1 (en) * | 2017-09-27 | 2019-04-04 | 嘉兴山蒲照明电器有限公司 | Light-emitting diode straight tube lamp and light-emitting diode illumination system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI844324B (en) * | 2023-03-30 | 2024-06-01 | 宏碁股份有限公司 | Boost converter with high conversion efficiency |
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