TWI756535B - Magnetron sputtering system and magnetron sputtering method - Google Patents

Abstract

A magnetron sputtering system includes an anode, a cathode, a target material layer and a closed magnetic field. The target material layer includes two configuration parts and a fixed part, each configuration part has two reset areas, the fixed part has two straight areas, the reset areas respectively have a bending area, and each bending area is connected to its corresponding adjacent straight and curved areas. The reset areas of the configuration parts can be mutually exchanged or rotated along an axis perpendicular to each other, so that each curved area does not connect with the adjacent straight area. The magnetron sputtering system and the magnetron sputtering method using the magnetron sputtering system of the present invention can improve the utilization rate of the target material.

Description

Magnetron sputtering system and magnetron sputtering method

The present invention relates to a sputtering system and a sputtering method, in particular to a magnetron sputtering system and a magnetron sputtering method.

Existing magnetron sputtering systems include an anode, a cathode spaced from the anode, a target layer on the cathode, and a closed magnetic field. When the existing magnetron sputtering system is used for thin film deposition on a substrate, the substrate is first placed on the anode and a process gas is introduced, and then an electric field is applied to dissociate the process gas into positive ions to strike the target. layer, and the target in the target layer is knocked out and deposited on the substrate. The magnetic field lines generated by the closed magnetic field penetrate the target layer to form a closed loop. During the sputtering process, positive ions will hit the target layer where the magnetic field lines pass, thereby increasing the film deposition rate.

However, in the existing magnetron sputtering system, due to the uneven distribution of the magnetic field lines, the frequency of each part of the target layer being struck by positive ions is not exactly the same during the sputtering process. In the sputtering process, it will be affected by more positive ions, thereby reducing the utilization rate of the target. The target utilization rate of the existing magnetron sputtering system is 20-30%, resulting in most of the target material being unusable and wasteful.

Therefore, how to solve the problem of the low target utilization rate of the existing magnetron sputtering systems and magnetron sputtering methods has become a current research goal.

Therefore, the first object of the present invention is to provide a magnetron sputtering system that can improve the utilization rate of the target material.

Therefore, the magnetron sputtering system of the present invention includes an anode, a cathode, a target material layer and a closed magnetic field.

The cathode is spaced apart from the anode.

The target layer is located on the cathode, and includes two disposition parts spaced apart from each other and a fixed part located between the disposition parts, each disposition part has two reset regions adjacent to each other and the fixed part , the fixing part has two straight line areas spaced apart from each other, the reset areas respectively have a curved area, and each curved area is connected to its adjacent straight line area and curved area.

The closed magnetic field can make the straight regions and the curved regions suffer more positive ion impacts during the sputtering process.

Wherein, the reset areas of the configuration parts can be mutually exchanged or rotated along an axis perpendicular to them, so that each curved area will not be connected to the adjacent straight area.

Therefore, the second object of the present invention is to provide a magnetron sputtering method which can improve the utilization rate of the target material.

Therefore, the magnetron sputtering method of the present invention includes a reset step. The reset step utilizes the above-mentioned magnetron sputtering system, and during the sputtering process, the reset regions are exchanged with each other or along a Rotate on an axis perpendicular to it so that each curved area does not connect to its adjacent straight area.

The effect of the present invention lies in the fact that the reset regions in the target layer of the magnetron sputtering system of the present invention respectively have a bending region, and the reset regions can exchange positions with each other or along an axis perpendicular to it. The way of rotation is used so that the curved regions do not connect with the adjacent straight regions, so the magnetron sputtering system and the magnetron sputtering method using the magnetron sputtering system of the present invention can improve the utilization rate of the target material. .

The content of the present invention will be described in detail below:

[Magnetron Sputtering System]

Preferably, each of the reset areas can be rotated 180 degrees along an axis located at the center thereof and perpendicular thereto, so that each curved area does not connect the adjacent straight and curved areas.

Preferably, every two reset areas located at the diagonal positions can exchange positions with each other, so that each curved area does not connect the adjacent straight area and curved area.

Preferably, each two adjacent reset areas are integrally formed to form one of the configuration parts, and each of the configuration parts can be rotated 180 degrees along an axis located in the center and perpendicular to it, so that each bending area is These straight areas will not be connected.

Preferably, each two adjacent reset regions are integrally formed to form one of the configuration portions, and the configuration portions can exchange positions with each other, so that each curved region is not connected to the straight line regions.

[Magnetron sputtering method]

Preferably, the reset step is to rotate each of the reset regions by 180 degrees along an axis located at the center and perpendicular to it, so that each curved region does not connect the adjacent straight and curved regions.

Preferably, the reset step is to exchange positions of every two diagonal reset areas, so that each curved area does not connect the adjacent straight area and curved area.

Preferably, every two adjacent reset areas of the magnetron sputtering system are integrally formed to form one of the configuration parts, and the reset step is to make the configuration parts each along a center and perpendicular to it. The axis is rotated 180 degrees so that each curved area does not connect the straight areas.

Preferably, every two adjacent reset areas of the magnetron sputtering system are integrally formed to form one of the configuration parts, and the reset step is to enable the configuration parts to exchange positions with each other, so that each Curved areas do not connect the straight areas.

Before the present invention is described in detail, it should be noted that in the following description, similar elements are designated by the same reference numerals.

< first embodiment >

1 and 2, a first embodiment of the magnetron sputtering system of the present invention includes an anode 1, a cathode 2, a target layer 3 and a closed magnetic field (not shown).

The cathode 2 is spaced apart from the anode 1 .

The target layer 3 is located on the side of the cathode 2 adjacent to the anode 1 , and includes two disposition portions 31 spaced apart from each other and a fixing portion 32 located between the disposition portions 31 . Each configuration portion 31 has two reset regions 311 adjacent to each other and adjacent to the fixing portion 32 , and the reset regions 311 are respectively a first reset region 3111 , a second reset region 3112 and a third reset region 311 . area 3113 and fourth reset area 3114. The fixing portion 32 has two linear regions 321 spaced apart from each other. The reset areas 311 respectively have a bending area 312 , and the bending areas 312 are a first bending area 3121 , a second bending area 3122 , a third bending area 3123 and a fourth bending area 3124 respectively, and each bending area 312 The adjacent straight area 321 and the curved area 312 are connected. In more detail, the first reset area 3111 has the first bending area 3121, the second reset area 3112 has the second bending area 3122, the third reset area 3113 has the third bending area 3123, the The fourth reset region 3114 has the fourth bending region 3124 .

The distribution of the magnetic field lines generated by the closed magnetic field (not shown in the figure) enables the straight regions 321 and the curved regions 312 to be impacted by more positive ions during the sputtering process.

The reset regions 311 of the configuration portions 31 can exchange positions with each other, so that each curved region 312 also exchanges positions with each other without connecting the adjacent straight regions 321 (see FIG. 3 ).

In this embodiment, every two diagonal reset areas 311 can exchange positions with each other, so that each curved area 312 also exchanges positions without connecting the adjacent straight area 321 and the curved area. 312 (see Figure 3). More specifically, referring to FIG. 2 and FIG. 3 , the first reset area 3111 and the fourth reset area 3114 located in diagonal positions can exchange positions with each other, so that the first bending area 3121 and the fourth bending area 3121 and the fourth bending area can be exchanged. The regions 3124 also exchange positions with each other without connecting the adjacent straight region 321 and the second or third curved regions 3122, 3123 (see FIG. 3), and also the second reset at the diagonal position The area 3112 and the third reset area 3113 can also exchange positions with each other, so that the second bending area 3122 and the third bending area 3123 also exchange positions with each other without connecting the adjacent straight area 321 and the The first or fourth bending zone 3121, 3124 (see Figure 3).

The magnetron sputtering method for performing magnetron sputtering on a substrate by using the magnetron sputtering system of the first embodiment will be described in detail below. It should be noted that the substrate is disposed on the side of the anode adjacent to the cathode.

The magnetron sputtering method includes a sputtering step and a reset step.

Referring to FIG. 1 , in the sputtering step, a process gas (such as an inert gas) is first introduced into the magnetron sputtering system in a vacuum environment, and then an electric field is applied to make the process gas become positive ions to collide with the target material layer 3, and the target material in the target material layer 3 will become negative ions due to the impact of positive ions, and then deposited on the substrate (not shown); and

Referring to FIGS. 2 and 3 , in the resetting step, the repositioning regions 311 are exchanged with each other during the above-mentioned sputtering step (ie, during the sputtering process), so that each bending region 312 also follows each other. Exchange positions without connecting the adjacent linear region 321 (see FIG. 3). In this embodiment, the reset step is to exchange positions of every two diagonal reset regions 311, so that each curved region 312 also exchanges positions without connecting the adjacent straight lines. zone 321 and bending zone 312 (see Figure 3).

< Second Embodiment >

Referring to FIG. 2 , a second embodiment of the magnetron sputtering system of the present invention is similar to the first embodiment. In a way of rotating the axis perpendicular to it, each curved area 312 also rotates without connecting the adjacent straight area 321 (see FIG. 4 ).

In this embodiment, each of the reset areas 311 can be rotated 180 degrees clockwise or counterclockwise along an axis located at the center and perpendicular to it, so that each bending area 312 is also rotated without connecting the other The adjacent straight area 321 and the curved area 312 (see FIG. 4 ). More specifically, referring to FIG. 2 , the first reset area 3111 can be rotated 180 degrees clockwise or counterclockwise along an axis located at its center and perpendicular to it, so that the first bending area 3121 also rotates without being connected The adjacent straight area 321 and the second curved area 3122 (see FIG. 4 ), the second reset area 3112 can be rotated 180 degrees clockwise or counterclockwise along an axis located at its center and perpendicular to it, so that the The second curved area 3122 also rotates without connecting the adjacent straight area 321 and the first curved area 3121 (see FIG. 4 ). The third reset area 3113 can be located along a center and perpendicular to it. The axis is rotated 180 degrees clockwise or counterclockwise, so that the third curved area 3123 also rotates without connecting the adjacent straight area 321 and the fourth curved area 3124 (see FIG. 4 ). The reset area 3114 can be rotated 180 degrees clockwise or counterclockwise along an axis located at its center and perpendicular to it, so that the fourth curved area 3124 also rotates without connecting the adjacent straight area 321 and the fourth curved area. Three bending regions 3123 (see Figure 4).

A magnetron sputtering method for magnetron sputtering on a substrate using the magnetron sputtering system of the second embodiment and a magnetron sputtering method for magnetron sputtering on a substrate using the magnetron sputtering system of the first embodiment The sputtering method is similar, the difference is that, referring to FIG. 2 , the reset step of the magnetron sputtering method of the second embodiment is to rotate the reset regions 311 clockwise or counterclockwise along a vertical axis. , so that each curved area 312 also rotates without connecting the adjacent straight area 321 (see FIG. 4 ). In this embodiment, the resetting step is to rotate the resetting regions 311 180 degrees clockwise or counterclockwise along an axis located at the center and perpendicular to it, so that each bending region 312 also rotates without The adjacent straight area 321 and the curved area 312 will be connected (see FIG. 4 ).

< Third Embodiment >

Referring to FIG. 2, a third embodiment of the magnetron sputtering system of the present invention is similar to the first embodiment, the difference is that every two adjacent reset regions 311 in the third embodiment are integrally formed to form the One of the configuration portions 31 can exchange positions with each other, so that each curved region 312 also exchanges positions with each other without connecting the straight regions 321 (see FIG. 5 ). More specifically, the first reset area 3111 and the second reset area 3112 are integrally formed to form one of the configuration portions 31 , and the third reset area 3113 and the fourth reset area 3114 are integrally formed to form Another configuration portion 21, and the two configuration portions 31 can exchange positions with each other, so that each curved region 312 also exchanges positions without connecting the straight line regions 321 (see FIG. 5).

A magnetron sputtering method for magnetron sputtering on a substrate using the magnetron sputtering system of the third embodiment and a magnetron sputtering method for magnetron sputtering on a substrate using the magnetron sputtering system of the first embodiment The sputtering method is similar, the difference is that, referring to FIG. 2 , the reset step of the magnetron sputtering method of the third embodiment is to exchange the positions of the configuration parts 31 with each other, so that each bending region 312 is also exchanged. position without connecting the rectilinear regions 321 (see FIG. 5).

< Fourth Embodiment >

Referring to FIG. 2, a fourth embodiment of the magnetron sputtering system of the present invention is similar to the second embodiment, the difference is that every two adjacent reset regions 311 in the fourth embodiment are integrally formed to form the One of the configuration parts 31, and each of the configuration parts 31 can be rotated 180 degrees clockwise or counterclockwise along an axis located at the center and perpendicular to it, so that each bending area 312 is also rotated without connecting the straight lines Zone 321 (see Figure 6). More specifically, the first reset area 3111 and the second reset area 3112 are integrally formed to form one of the configuration portions 31 , and the third reset area 3113 and the fourth reset area 3114 are integrally formed to form Another configuration portion 31, and each of the two configuration portions 31 can be rotated 180 degrees clockwise or counterclockwise along an axis located in the center and perpendicular to it, so that each curved area 312 is also rotated without connecting the straight lines Zone 321 (see Figure 6).

A magnetron sputtering method for magnetron sputtering on a substrate using the magnetron sputtering system of the fourth embodiment and a magnetron sputtering method for magnetron sputtering on a substrate using the magnetron sputtering system of the second embodiment The sputtering method is similar, the difference is that, referring to FIG. 2 , the reset step of the magnetron sputtering method of the fourth embodiment is to rotate the disposition parts 31 by 180 degrees along an axis located at the center and perpendicular to it. , so that each curved area 312 also rotates without connecting the straight areas 321 (see FIG. 6 ).

It is particularly worth mentioning that, referring to FIG. 2 , during the sputtering process of the magnetron sputtering system of the present invention, the reset regions 311 can be exchanged with each other or rotated along a vertical axis, so that the The equal-bending region 312 also exchanges positions or rotates without connecting the adjacent straight region 321 (see FIGS. 3 to 6 ), that is, during the sputtering process, the distribution position of the target material in the target material layer 3 can be reassigned. Therefore, compared with the magnetron sputtering system in which the distribution position of the target material of the target material layer 3 cannot be redistributed during the sputtering process of the present invention, the distribution position of the target material of the target material layer 3 in the present invention can be redistributed during the sputtering process. The allocated magnetron sputtering system can increase the target utilization rate to more than 40%, effectively solving the problem of the low target utilization rate (only 20~30%) of the existing magnetron sputtering system.

To sum up, since the reset regions 311 in the target layer 3 of the magnetron sputtering system of the present invention respectively have a bending region 312, and the reset regions 311 can exchange positions with each other or along a The vertical axis is rotated so that the curved regions 312 do not connect the adjacent straight regions 321, so the magnetron sputtering system of the present invention and the magnetron sputtering method using the magnetron sputtering system can The utilization rate of the target material is improved, so the purpose of the present invention can indeed be achieved.

However, the above are only examples of the present invention, and should not limit the scope of the present invention. Any simple equivalent changes and modifications made according to the scope of the application for patent of the present invention and the content of the patent specification are still within the scope of the present invention. within the scope of the invention patent.

1: Anode 2: Cathode 3: target layer 31: Configuration Department 311: Reset Area 3111: First reset area 3112: Second reset area 3113: Third Reset Area 3114: Fourth reset zone 312: Bending Zone 3121: First Bend Zone 3122: Second Bending Zone 3123: Third Bend Zone 3124: Fourth Bend Zone 32: Fixed part 321: Straight Zone

Other features and effects of the present invention will be clearly presented in the embodiments with reference to the drawings, wherein: FIG. 1 is a schematic side view illustrating a first embodiment of the magnetron sputtering system of the present invention; A schematic top view illustrating the first embodiment of the magnetron sputtering system of the present invention; FIG. 3 is a top schematic view illustrating every two diagonally positioned weights of the first embodiment of the magnetron sputtering system of the present invention Figure 4 is a schematic top view illustrating the reset regions of a second embodiment of the magnetron sputtering system of the present invention along a center and perpendicular to each of the reset regions. After the axis of the magnetron is rotated 180 degrees clockwise or counterclockwise, the arrangement of the bending area; 6 is a schematic top view illustrating that the two configuration parts of a fourth embodiment of the magnetron sputtering system of the present invention rotate clockwise or counterclockwise along an axis located at the center and perpendicular to it. After 180 degrees, the arrangement of the bending area.

3: target layer

31: Configuration Department

311: Reset Area

3111: First reset area

3112: Second reset area

3113: Third Reset Area

3114: Fourth reset zone

312: Bending Zone

3121: First Bend Zone

3122: Second Bending Zone

3123: Third Bend Zone

3124: Fourth Bend Zone

32: Fixed part

321: Straight Zone

Claims (10)

A magnetron sputtering system, comprising: an anode; a cathode spaced apart from the anode; a target layer located on the cathode and comprising two disposition parts spaced apart from each other and a fixing part located between the disposition parts Each configuration part has two reset areas adjacent to each other and adjacent to the fixed part, the fixed part has two linear areas spaced apart from each other, the reset areas respectively have a curved area, each curved area It will connect the adjacent straight area and curved area; and a closed magnetic field can make the straight area and the curved area suffer more positive ions during the sputtering process. The regions can be mutually exchanged or rotated along an axis perpendicular to each other so that each curved region does not connect with its adjacent straight region. The magnetron sputtering system of claim 1, wherein each of the reset regions can be rotated 180 degrees along an axis located at its center and perpendicular to it, so that each bending region does not connect to the adjacent one Straight and curved areas. The magnetron sputtering system as claimed in claim 1, wherein every two reset areas located at diagonal positions can exchange positions with each other, so that each curved area does not connect the adjacent straight area and curved area . The magnetron sputtering system as claimed in claim 1, wherein each two adjacent reset regions are integrally formed to form one of the configuration parts, and each of the configuration parts can be located along a center and perpendicular to it. The shaft is rotated 180 degrees so that each curved area does not connect the straight areas. The magnetron sputtering system according to claim 1, wherein each two adjacent reset regions are integrally formed to form one of the configuration portions, and the configuration portions can exchange positions with each other, so that each bending region These straight areas will not be connected. A magnetron sputtering method, comprising a reset step, the reset step is to use the magnetron sputtering system as claimed in claim 1, and during the sputtering process, the reset regions exchange positions with each other or along the respective edges. An axis perpendicular to it is rotated so that each curved region does not connect with its adjacent straight region. The magnetron sputtering method as claimed in claim 6, wherein the resetting step is to rotate each of the resetting regions by 180 degrees along an axis located at the center and perpendicular thereto, so that each bending region is not connected The straight line area and the curved area adjacent to it. The magnetron sputtering method as claimed in claim 6, wherein the reset step is to exchange positions of every two reset regions located on a diagonal position, so that each curved region does not connect to the adjacent one. Straight and curved areas. The magnetron sputtering method as claimed in claim 6, wherein every two adjacent reset regions of the magnetron sputtering system are integrally formed to form one of the configuration portions, and the reset step is to make the The configuration portions are each rotated 180 degrees along an axis located at the center thereof and perpendicular thereto, so that each curved region does not connect the straight line regions. The magnetron sputtering method as claimed in claim 6, wherein every two adjacent reset regions of the magnetron sputtering system are integrally formed to form one of the configuration portions, and the reset step is to make the The configuration parts can be exchanged with each other so that each curved region does not connect the straight line regions.

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