TW202039902A - Magnetron sputtering system and method wherein the system includes an anode, a cathode, a target material layer and a closed magnetic field - Google Patents

Abstract

A magnetron sputtering system includes an anode, a cathode, a target material layer and a closed magnetic field. The target material layer includes two configuration portions and a fixed portion. Each configuration portion has two reset areas. The fixed portion has two straight areas. Each of the reset areas has a curved area. Each curved area is connected to the adjacent straight and curved areas. The reset areas of the configuration portions can be mutually exchanged from original positions or rotated along a perpendicular axis, so that each curved area does not connect to the adjacent straight area. The magnetron sputtering system of the present invention and a magnetron sputtering method using the magnetron sputtering system can improve a utilization rate of the target material.

Description

Magnetron sputtering system and magnetron sputtering method

The invention relates to a sputtering system and a sputtering method, in particular to a magnetron sputtering system and a magnetron sputtering method.

The existing magnetron sputtering system includes an anode, a cathode spaced apart from the anode, a target layer on the cathode, and a closed magnetic field. When using an existing magnetron sputtering system to deposit a film on a substrate, the substrate is first placed on the anode and a process gas is introduced, and then an electric field is applied to dissociate the process gas into positive ions to hit the target Layer, and the target in the target layer will be impacted and deposited on the substrate. The magnetic field lines generated by the enclosed magnetic field penetrate the target layer to form a closed loop. During the sputtering process, positive ions will hit the target layer where magnetic lines of force pass, thereby increasing the film deposition rate.

However, in the existing magnetron sputtering system, due to the uneven distribution of the magnetic field lines, the frequency at which each part of the target layer is impacted by positive ions during the sputtering process is not exactly the same, so the target layer includes a ring The area that will be impacted by more positive ions during the sputtering process will reduce the utilization of the target. The target utilization rate of the existing magnetron sputtering system is 20~30%, resulting in most of the targets being unusable and waste.

Therefore, how to solve the problem of low target utilization rate of the existing magnetron sputtering system and magnetron sputtering method has become the goal of current research.

Therefore, the first objective of the present invention is to provide a magnetron sputtering system that can improve the utilization of the target material.

Therefore, the magnetron sputtering system of the present invention includes an anode, a cathode, a target layer and a closed magnetic field.

The cathode is spaced from the anode.

The target material layer is located on the cathode, and includes two spaced-apart arrangement portions and a fixing portion located between the arrangement portions, each arrangement portion has two reset regions adjacent to each other and adjacent to the fixing portion The fixing portion has two linear regions spaced apart from each other, and the reset regions respectively have a curved region, and each curved region is connected to the adjacent linear region and the curved region.

The enclosed magnetic field can make the straight areas and the curved areas suffer more positive ions during the sputtering process.

Wherein, the reset areas of the disposition parts can be mutually exchanged or rotated along an axis perpendicular thereto, so that each curved area does not connect with the adjacent straight area.

Therefore, the second objective of the present invention is to provide a magnetron sputtering method that can improve the utilization of the target material.

Therefore, the magnetron sputtering method of the present invention includes a reset step. The reset step utilizes the magnetron sputtering system as described above, and during the sputtering process, the reset areas are exchanged with each other or along the same line. Rotate on the axis perpendicular to it, so that each curved area does not connect to the adjacent straight area.

The effect of the present invention is: because the reset areas in the target material layer of the magnetron sputtering system of the present invention respectively have a curved area, and the reset areas can exchange positions or be along an axis perpendicular to it. Rotation is used so that the curved areas will not connect to the adjacent straight areas. Therefore, the magnetron sputtering system and the magnetron sputtering method using the magnetron sputtering system of the present invention can improve the utilization rate of the target material .

The content of the present invention will be described in detail below:

[Magnetron Sputtering System]

Preferably, each of the reset areas can be rotated 180 degrees along an axis perpendicular to the center of the reset area, so that each curved area does not connect the adjacent straight area and curved area.

Preferably, every two reset areas located at the diagonal position can exchange positions with each other, so that each curved area does not connect the adjacent straight area and curved area.

Preferably, every two adjacent reset regions are integrally formed to form one of the configuration portions, and each of the configuration portions can be rotated 180 degrees along an axis perpendicular to the center of the configuration portion, so that each bending area These straight areas will not be connected.

Preferably, every two adjacent reset regions are integrally formed to form one of the configuration portions, and the configuration portions can exchange positions, so that each curved region does not connect the straight regions.

[Magnetron Sputtering Method]

Preferably, the resetting step is to rotate each of the resetting areas 180 degrees along an axis perpendicular to the center of the resetting area, so that each curved area does not connect the adjacent straight area and the curved area.

Preferably, the resetting step is to exchange positions of every two resetting areas located on a diagonal position, so that each curved area does not connect with the adjacent straight area and curved area.

Preferably, every two adjacent reset regions of the magnetron sputtering system are integrally formed to form one of the configuration parts, and the reset step is to make the configuration parts located along a center and perpendicular to each The axis is rotated 180 degrees so that each curved area does not connect the straight areas.

Preferably, every two adjacent reset areas of the magnetron sputtering system are integrally formed to form one of the configuration parts, and the reset step is to enable the configuration parts to exchange positions, so that each The curved areas will not connect the straight areas.

Before the present invention is described in detail, it should be noted that in the following description, similar elements are represented by the same numbers.

＜ First embodiment ＞

1 and 2, a first embodiment of the magnetron sputtering system of the present invention includes an anode 1, a cathode 2, a target layer 3, and a closed magnetic field (not shown).

The cathode 2 is spaced from the anode 1.

The target layer 3 is located on the side of the cathode 2 adjacent to the anode 1, and includes two spaced apart arrangement portions 31 and a fixed portion 32 located between the arrangement portions 31. Each configuration portion 31 has two reset regions 311 adjacent to each other and adjacent to the fixed portion 32. The reset regions 311 are a first reset region 3111, a second reset region 3112, and a third reset region. Area 3113 and the fourth reset area 3114. The fixing portion 32 has two linear regions 321 spaced apart from each other. Each of the reset areas 311 has a bending area 312. The bending areas 312 are respectively a first bending area 3121, a second bending area 3122, a third bending area 3123, and a fourth bending area 3124, and each bending area 312 It will connect the adjacent straight area 321 and the curved area 312. In more detail, the first reset region 3111 has the first bending region 3121, the second reset region 3112 has the second bending region 3122, the third reset region 3113 has the third bending region 3123, the The fourth reset area 3114 has the fourth bending area 3124.

The distribution of magnetic lines of force generated by the enclosed magnetic field (not shown in the figure) can make the straight areas 321 and the curved areas 312 suffer more positive ions during the sputtering process.

The reset areas 311 of the configuration parts 31 can exchange positions with each other, so that each curved area 312 also exchanges positions without connecting the adjacent straight area 321 (see FIG. 3).

In this embodiment, every two reset areas 311 located on a diagonal position can exchange positions, so that each curved area 312 also exchanges positions without connecting the adjacent straight area 321 and curved area. 312 (see Figure 3). More specifically, referring to FIGS. 2 and 3, the first reset region 3111 and the fourth reset region 3114 located on a diagonal line can exchange positions with each other, so that the first bending region 3121 and the fourth bending region 3121 The area 3124 also exchanges positions with each other without connecting the adjacent straight area 321 and the second or third curved area 3122, 3123 (see FIG. 3), and the second reset is also located at a diagonal position The area 3112 and the third reset area 3113 can also exchange positions, so that the second curved area 3122 and the third curved area 3123 also exchange positions without connecting the adjacent straight area 321 and the The first or fourth bending zone 3121, 3124 (see Figure 3).

The magnetron sputtering method for magnetron sputtering a substrate using the magnetron sputtering system of the first embodiment will be described in detail below. It should be noted that the substrate is disposed on the side of the anode adjacent to the cathode.

The magnetron sputtering method includes a sputtering step and a reset step.

Referring to Figure 1, the sputtering step is to first pass a process gas (such as an inert gas) into the magnetron sputtering system in a vacuum environment, and then apply an electric field to make the process gas become positive ions to hit the target Layer 3, and the target material in the target material layer 3 will become negative ions due to the impact of positive ions, and then be deposited on the substrate (not shown); and

2 and 3, the resetting step is to exchange the positions of the resetting areas 311 during the aforementioned sputtering step (that is, during the sputtering process), so that each bending area 312 also follows each other. The positions are exchanged without connecting the adjacent straight area 321 (see FIG. 3). In this embodiment, the resetting step is to make every two diagonal resetting areas 311 exchange positions, so that each curved area 312 also exchanges positions without connecting the adjacent straight line. Area 321 and bending area 312 (see Figure 3).

＜ Second embodiment ＞

Referring to FIG. 2, a second embodiment of the magnetron sputtering system of the present invention is similar to the first embodiment. The difference is that the reset regions 311 of the configuration portions 31 of the second embodiment can pass through the respective edge The way of rotating on the axis perpendicular to it, so that each curved area 312 also rotates without connecting the adjacent linear area 321 (see FIG. 4).

In this embodiment, each of the reset regions 311 can rotate 180 degrees clockwise or counterclockwise along an axis perpendicular to its center, so that each curved region 312 also rotates without connecting the corresponding one. The adjacent straight area 321 and the curved area 312 (see Figure 4). More specifically, referring to FIG. 2, the first reset zone 3111 can be rotated clockwise or counterclockwise by 180 degrees along an axis perpendicular to the center thereof, so that the first bending zone 3121 also rotates without being connected The adjacent straight area 321 and the second curved area 3122 (see FIG. 4), the second reset area 3112 can be rotated clockwise or counterclockwise 180 degrees along an axis perpendicular to the center of the second reset area 3122, so that The second curved area 3122 also rotates without connecting the adjacent straight area 321 and the first curved area 3121 (see FIG. 4). The third reset area 3113 can be located along a center and perpendicular to it. The shaft rotates 180 degrees clockwise or counterclockwise, so that the third curved area 3123 also rotates without connecting the adjacent straight area 321 and the fourth curved area 3124 (see FIG. 4). The reset zone 3114 can be rotated clockwise or counterclockwise by 180 degrees along an axis perpendicular to its center, so that the fourth curved zone 3124 also rotates without connecting the adjacent straight zone 321 and the first Three-bend area 3123 (see Figure 4).

The magnetron sputtering method for magnetron sputtering a substrate using the magnetron sputtering system of the second embodiment and the magnetron sputtering method for a substrate using the magnetron sputtering system of the first embodiment The sputtering method is similar, the difference is that, referring to FIG. 2, the resetting step of the magnetron sputtering method of the second embodiment is to make the resetting areas 311 rotate clockwise or counterclockwise along an axis perpendicular to it. , So that each curved area 312 also rotates without connecting the adjacent straight area 321 (see FIG. 4). In this embodiment, the resetting step is to make each of the resetting regions 311 rotate 180 degrees clockwise or counterclockwise along an axis perpendicular to the center of the resetting regions 311, so that each bending region 312 also rotates without rotation. It will connect the adjacent straight area 321 and curved area 312 (see FIG. 4).

＜ The third embodiment ＞

Referring to FIG. 2, a third embodiment of the magnetron sputtering system of the present invention is similar to the first embodiment. The difference is that every two adjacent reset regions 311 of the third embodiment are integrally formed to form the One of the arranging portions 31, and the arranging portions 31 can exchange positions, so that each curved area 312 also exchanges positions without connecting the straight areas 321 (see FIG. 5). More specifically, the first reset area 3111 and the second reset area 3112 are integrally formed to form one of the configuration portions 31, and the third reset area 3113 and the fourth reset area 3114 are integrally formed to form Another configuration part 21, and the two configuration parts 31 can exchange positions, so that each curved area 312 also exchanges positions without connecting the straight areas 321 (see FIG. 5).

A magnetron sputtering method for magnetron sputtering a substrate using the magnetron sputtering system of the third embodiment and a magnetron sputtering method for a substrate using the magnetron sputtering system of the first embodiment The sputtering method is similar, the difference is that, referring to FIG. 2, the resetting step of the magnetron sputtering method of the third embodiment is to exchange the positions of the arrangement parts 31, so that each bending area 312 is also exchanged. Position without connecting the straight areas 321 (see Figure 5).

＜ Fourth embodiment ＞

Referring to FIG. 2, a fourth embodiment of the magnetron sputtering system of the present invention is similar to the second embodiment. The difference is that every two adjacent reset regions 311 of the fourth embodiment are integrally formed to form the One of the arranging parts 31, and each of the arranging parts 31 can rotate 180 degrees clockwise or counterclockwise along an axis perpendicular to the center thereof, so that each curved area 312 also rotates without connecting the straight lines Area 321 (see Figure 6). More specifically, the first reset area 3111 and the second reset area 3112 are integrally formed to form one of the configuration portions 31, and the third reset area 3113 and the fourth reset area 3114 are integrally formed to form Another configuration portion 31, and each of the two configuration portions 31 can be rotated clockwise or counterclockwise by 180 degrees along an axis perpendicular to the center thereof, so that each bending area 312 also rotates without connecting the straight lines Area 321 (see Figure 6).

A magnetron sputtering method for magnetron sputtering a substrate using the magnetron sputtering system of the fourth embodiment and a magnetron sputtering method for a substrate using the magnetron sputtering system of the second embodiment The sputtering method is similar. The difference is that, referring to FIG. 2, the resetting step of the magnetron sputtering method of the fourth embodiment is to rotate the arranging portions 31 by 180 degrees along an axis perpendicular to its center. , So that each curved area 312 also rotates without connecting the straight areas 321 (see FIG. 6).

It is particularly worth mentioning that, referring to FIG. 2, during the sputtering process of the magnetron sputtering system of the present invention, the reset regions 311 can exchange positions or rotate along an axis perpendicular to the The equal-bending area 312 also changes positions or rotates without connecting the adjacent straight area 321 (see Figures 3 to 6). That is, during the sputtering process, the distribution position of the target material of the target layer 3 can be Re-assigned. Therefore, compared with the existing magnetron sputtering system in which the target material of the target layer 3 cannot be redistributed during the sputtering process, the target material of the target layer 3 during the sputtering process of the present invention can be redistributed. The allocated magnetron sputtering system can increase the target utilization rate to more than 40%, effectively solving the problem of low target utilization rate (only 20-30%) of the existing magnetron sputtering system.

In summary, because the reset regions 311 in the target layer 3 of the magnetron sputtering system of the present invention each have a curved region 312, and the reset regions 311 can exchange positions with each other or each along a The vertical axis is rotated so that the curved regions 312 will not connect to the adjacent straight region 321. Therefore, the magnetron sputtering system of the present invention and the magnetron sputtering method using the magnetron sputtering system can Improve the utilization rate of the target material, so it can indeed achieve the purpose of the invention.

However, the above are only examples of the present invention. When the scope of implementation of the present invention cannot be limited by this, all simple equivalent changes and modifications made in accordance with the scope of the patent application of the present invention and the content of the patent specification still belong to This invention patent covers the scope.

1: anode 2: cathode 3: Target layer 31: Configuration Department 311: reset zone 3111: The first reset zone 3112: Second reset zone 3113: Third Reset Zone 3114: Fourth Reset Zone 312: bending zone 3121: first bending zone 3122: second bending zone 3123: third bending zone 3124: fourth bending zone 32: Fixed part 321: Straight Area

Other features and effects of the present invention will be clearly presented in the embodiments with reference to the drawings, in which: Figure 1 is a schematic side view illustrating a first embodiment of the magnetron sputtering system of the present invention; Figure 2 is A schematic top view illustrating the first embodiment of the magnetron sputtering system of the present invention; Figure 3 is a schematic top view illustrating the first embodiment of the magnetron sputtering system of the present invention with two diagonal positions The arrangement of the bending areas after the placement areas are exchanged; FIG. 4 is a schematic top view illustrating a second embodiment of the magnetron sputtering system of the present invention. The reset areas are located along a center and perpendicular to it. After the shaft is rotated 180 degrees clockwise or counterclockwise, the arrangement of the bending areas; Figure 5 is a top view schematic diagram illustrating a third embodiment of the magnetron sputtering system of the present invention after the two configuration parts exchange positions, which The arrangement of the bending zone; and FIG. 6 is a schematic top view illustrating a fourth embodiment of the magnetron sputtering system of the present invention. The two configuration parts each rotate clockwise or counterclockwise along an axis perpendicular to its center. After 180 degrees, the arrangement of the bending area.

3: Target layer

31: Configuration Department

311: reset zone

3111: The first reset zone

3112: Second reset zone

3113: Third Reset Zone

3114: Fourth Reset Zone

312: bending zone

3121: first bending zone

3122: second bending zone

3123: third bending zone

3124: fourth bending zone

32: Fixed part

321: Straight Area

Claims (10)

A magnetron sputtering system, comprising: an anode; a cathode spaced apart from the anode; a target material layer located on the cathode, and comprising two spaced apart arrangement parts and a fixing between the arrangement parts Each configuration portion has two reset areas adjacent to each other and adjacent to the fixed portion, the fixed portion has two linear areas spaced apart from each other, each of the reset areas has a curved area, and each curved area It connects the straight area and the curved area adjacent to it; and a closed magnetic field can make the straight area and the curved area suffer more positive ion impact during the sputtering process, and the resetting of the configuration parts The zones can exchange positions or rotate along an axis perpendicular to each other, so that each curved zone does not connect to the adjacent straight zone. The magnetron sputtering system according to claim 1, wherein each of the reset zones can be rotated 180 degrees along an axis perpendicular to the center of the reset zone, so that each bending zone does not connect to the adjacent one. Straight and curved areas. The magnetron sputtering system according to claim 1, wherein every two reset areas located on a diagonal position can be interchanged, so that each curved area does not connect the adjacent straight area and curved area . The magnetron sputtering system according to claim 1, wherein each two adjacent reset areas are integrally formed to form one of the configuration portions, and each of the configuration portions can be positioned along a center and perpendicular to it. The axis is rotated 180 degrees so that each curved area does not connect the straight areas. The magnetron sputtering system according to claim 1, wherein every two adjacent reset areas are integrally formed to form one of the configuration parts, and the configuration parts can exchange positions so that each bending zone These straight areas will not be connected. A magnetron sputtering method, including a reset step, the reset step is to use the magnetron sputtering system as described in claim 1, and during the sputtering process, the reset areas are exchanged positions or their respective edges An axis perpendicular to it rotates so that each curved area does not connect to the adjacent straight area. The magnetron sputtering method according to claim 6, wherein the resetting step is to rotate each of the resetting areas 180 degrees along an axis perpendicular to the center of the resetting area, so that each bending area is not connected The adjacent straight area and curved area. The magnetron sputtering method according to claim 6, wherein the resetting step is to make every two reset areas located at a diagonal position exchange positions with each other, so that each curved area does not connect the adjacent one Straight and curved areas. The magnetron sputtering method according to claim 6, wherein every two adjacent reset regions of the magnetron sputtering system are integrally formed to form one of the configuration parts, and the reset step is to make the The arranging parts are rotated by 180 degrees along an axis perpendicular to the center, so that each curved area does not connect the straight line areas. The magnetron sputtering method according to claim 6, wherein every two adjacent reset regions of the magnetron sputtering system are integrally formed to form one of the configuration parts, and the reset step is to make the The arranging parts can exchange positions so that each curved area does not connect the straight areas.

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