TWI756579B - Substrate processing equipment - Google Patents
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- TWI756579B TWI756579B TW108139520A TW108139520A TWI756579B TW I756579 B TWI756579 B TW I756579B TW 108139520 A TW108139520 A TW 108139520A TW 108139520 A TW108139520 A TW 108139520A TW I756579 B TWI756579 B TW I756579B
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Abstract
本發明係設置有相對於由被設置在升降機13之保持棒132上的保持溝1321自下方所保持的基板W而自上方保持的保持部52a,其中,該升降機13被配置在基板處理裝置之內槽501之處理位置。 The present invention is provided with the holding portion 52a that is held from above with respect to the substrate W held from below by the holding grooves 1321 provided on the holding rods 132 of the lifter 13 arranged in the substrate processing apparatus. The processing position of the inner tank 501.
Description
本發明係關於對半導體晶圓等之基板進行蝕刻處理或洗淨處理的基板處理裝置。 The present invention relates to a substrate processing apparatus for performing etching processing or cleaning processing on substrates such as semiconductor wafers.
在半導體裝置之製造步驟中,藉由使半導體晶圓等之基板浸漬於處理槽,而對該基板半導體施以蝕刻處理、洗淨處理。作為如此之處理槽,已知有如下構成,其具備有於處理槽底部之兩側朝向處理槽之底面中央噴出處理液的噴出管、及於各噴出管之間自處理槽之底部供給氣泡的複數個氣泡供給管(例如參照專利文獻1)。 In the manufacturing step of a semiconductor device, by immersing a substrate such as a semiconductor wafer in a processing tank, the substrate semiconductor is subjected to etching treatment and cleaning treatment. As such a treatment tank, there is known a configuration including ejection pipes for ejecting the treatment liquid toward the center of the bottom surface of the treatment tank on both sides of the bottom of the treatment tank, and a configuration for supplying air bubbles from the bottom of the treatment tank between the ejection pipes. A plurality of air bubble supply pipes (for example, refer to Patent Document 1).
於如此之處理槽中,進而設置有用以使基板浸漬於被貯存的處理液中的升降機。升降機係藉由3根保持棒而一併地將複數片基板以立起姿勢加以保持。此外,升降機係被設置為於上下方向及水平方向可移動,使所保持的複數片基板在浸漬於處理槽內之處理液中的處理位置與自處理液中拉起至上方的交接位置之間升降,且可使其朝相鄰之處理槽移動。 In such a processing tank, an elevator for immersing the substrate in the stored processing liquid is further provided. The lifter holds a plurality of substrates together in a standing posture by three holding rods. In addition, the lifter is provided so as to be movable in the vertical direction and the horizontal direction, so that the plurality of substrates held are between a processing position immersed in the processing liquid in the processing tank and a transfer position pulled up from the processing liquid. It can be lifted and lowered, and it can be moved toward the adjacent processing tank.
[先前技術文獻] [Prior Art Literature]
[專利文獻] [Patent Literature]
[專利文獻1]日本專利第6356727號公報 [Patent Document 1] Japanese Patent No. 6356727
於對基板施以處理時,處理液與氣泡之自底部朝上方的流動係作用於被保持棒所保持而浸漬於處理槽的基板。受到該作用而存在有使基板於圓周方向上旋轉之情形。然而,對於被升降機所保持的複數片基板,基板的旋轉未必一樣地產生,因而存在有在處理之效果上產生不均之虞。 When the substrate is treated, the flow of the treatment liquid and the air bubbles from the bottom to the upper direction acts on the substrate held by the holding bar and immersed in the treatment tank. Due to this action, the substrate may be rotated in the circumferential direction. However, for a plurality of substrates held by the lifter, the rotation of the substrates does not necessarily occur uniformly, so that there is a possibility of unevenness in the processing effect.
於此,所揭示之技術的一方面係將抑制在基板上所產生的旋轉作為課題。 Here, one aspect of the disclosed technology is to suppress the rotation generated on the substrate as a subject.
所揭示之技術的一方面係由如下之基板處理裝置所例示。本基板處理裝置之特徵在於,其具備有:槽,其貯存處理基板的處理液,使該基板浸漬;及保持構件,其將上述基板以立起姿勢加以保持,且被設置為相對於上述槽而在上述基板之交接位置與處理位置之間可升降;上述保持構件具有自下方保持上述基板的保持溝,於上述槽設置有保持部,在上述保持構件於上述處理位置上保持上述基板之狀態下,該保持部係於較上述保持溝更上方,且於包含上述基板表面之法線的鉛直方向之虛擬面的水平方向之兩側的位置上抵接於上述基板,而抑制上述基板之旋轉。 One aspect of the disclosed technology is exemplified by the following substrate processing apparatus. The present substrate processing apparatus is characterized by comprising: a tank for storing a processing liquid for processing a substrate and immersing the substrate; and a holding member for holding the substrate in an upright posture and provided relative to the tank The holding member has a holding groove for holding the substrate from below, a holding portion is provided in the groove, and the holding member holds the substrate at the processing position. The holding portion is positioned above the holding groove and abuts the substrate at positions on both sides of the horizontal direction of the virtual plane including the vertical direction of the normal to the surface of the substrate, thereby suppressing the rotation of the substrate. .
根據如此之發明,可於基板被浸漬於處理液的處理位置上,自槽之底部對基板供給有液體、氣泡之上升流的情況下,藉由在較保持溝更上方抵接於基板的保持部而抑制在藉由保持構件之保持溝所保持的基板上於下方所產生的旋轉。 According to such an invention, in the case where the substrate is immersed in the processing liquid, the liquid is supplied to the substrate from the bottom of the groove, and the upward flow of bubbles can be achieved by holding the substrate in contact with the substrate above the holding groove. The portion suppresses the downward rotation of the substrate held by the holding groove of the holding member.
進而,本發明亦可為,與被上述保持構件所保持而排列的複數片上述基板之各者對應,上述保持溝及上述保持部被設置於上 述排列方向上,相對於自在上述排列方向上被設置的複數個上述保持溝之相位偏移相當於所鄰接之該保持溝間之間距的二分之一之相位,而在上述排列方向上被設置的複數個保持部之相位被設定為更進一步偏移。 Furthermore, in the present invention, the holding groove and the holding portion may be provided on the upper side corresponding to each of the plurality of substrates held and arranged by the holding member. In the arrangement direction, the phase shift with respect to the plurality of the holding grooves provided in the above-mentioned arrangement direction corresponds to a phase corresponding to one-half of the pitch between the adjacent holding grooves, and is shifted in the above-mentioned arrangement direction. The phases of the plurality of holding portions provided are set to be further shifted.
進而,於本發明中亦可為,上述保持部被設置在較通過被上述保持構件所保持的上述基板之中心的水平面更下方的位置。 Furthermore, in this invention, the said holding|maintenance part may be provided in the position lower than the horizontal plane passing through the center of the said board|substrate held by the said holding member.
進而,於本發明中亦可為,上述保持溝之在與包含上述基板之法線的鉛直面平行的剖面上的形狀為楔形狀。 Furthermore, in this invention, the shape of the said holding groove in the cross section parallel to the vertical plane containing the normal line of the said board|substrate may be a wedge shape.
進而,於本發明中亦可為,上述保持溝之在與包含上述基板之法線的鉛直面平行的剖面上的形狀為對該基板的晶邊部之上述剖面上之形狀加以仿照而成的形狀。 Furthermore, in the present invention, the shape of the holding groove on the cross section parallel to the vertical plane including the normal line of the substrate may be modeled on the shape of the cross section of the edge portion of the substrate. shape.
進而,於本發明中亦可為,具有搬送機構,該搬送機構係在上述保持構件下降至上述槽內的位置,於水平方向上可變更上述保持部與被上述保持構件所保持的上述基板之表面之間的間隔。 Furthermore, in the present invention, there may be provided a conveying mechanism that can change the relationship between the holding portion and the substrate held by the holding member in the horizontal direction at the position where the holding member is lowered into the groove. spacing between surfaces.
進而,於本發明中亦可為,上述保持部為大致圓錐形狀之突起或呈溝形狀。 Furthermore, in this invention, the said holding|maintenance part may be the protrusion of a substantially conical shape, or the shape of a groove.
進而,於本發明中亦可為,於上述保持部之下側具備有第2保持部,在上述保持構件於上述處理位置上保持上述基板之狀態下,該第2保持部係於較上述保持溝更上方,且於包含上述基板表面之法線的鉛直方向之虛擬面的水平方向之兩側的位置上抵接於上述基板,而抑制上述基板之旋轉。 Furthermore, in the present invention, a second holding portion may be provided on the lower side of the holding portion, and the second holding portion may be more than the holding portion in a state where the holding member holds the substrate at the processing position. The groove is further above and abuts the substrate at positions on both sides of the horizontal direction of the virtual plane including the vertical direction of the normal to the substrate surface, thereby suppressing the rotation of the substrate.
若如此,可藉由保持部與被設置於其下側的第2保持部而更確實地抑制於基板上所產生的旋轉。保持部之數量不限於在上下方向上設置2個之情況,而可設置3個以上之經適當被選擇之數量的 保持部。 In this way, the rotation generated on the substrate can be more reliably suppressed by the holding portion and the second holding portion provided on the lower side thereof. The number of holding parts is not limited to the case where two are provided in the vertical direction, and three or more can be provided in an appropriately selected number. keep the department.
進而,於本發明中亦可為,於上述槽具備有:噴出管,其噴出上述處理液;及氣泡供給管,其自上述槽之底部供給氣泡。 Furthermore, in this invention, the said tank may be equipped with the discharge pipe which discharges the said processing liquid, and the air bubble supply pipe which supplies air bubbles from the bottom part of the said tank.
如此,即便在藉由噴出管、氣泡供給管而產生自槽之底部朝上方的上升流的基板處理裝置中,仍可有效地抑制基板之旋轉。 In this way, even in the substrate processing apparatus in which the upward flow from the bottom of the tank is generated by the ejection pipe and the air bubble supply pipe, the rotation of the substrate can be effectively suppressed.
此外,所揭示之技術的另一方面由如下之基板處理裝置所例示。本基板處理裝置具備有:槽,其貯存處理液,以立起姿勢浸漬平板狀之基板而進行處理;保持構件,其被設置為相對於上述槽而在上述基板之交接位置與該槽內之處理位置之間可升降,且具有凹狀之複數個保持溝,該複數個保持溝係自立起姿勢之下方保持且載置上述基板;及抵接部,其具有尖銳形狀之本體,該尖銳形狀之本體係在較位於上述處理位置的上述保持構件之上述保持溝更上方且較上述槽之深度中心更下側,具有以與所鄰接的上述保持溝之間隔相等的間隔相離的頂點,且該頂點之朝向係在與上述保持溝之長度方向平行的方向上延伸。 Furthermore, another aspect of the disclosed technology is exemplified by the following substrate processing apparatus. This substrate processing apparatus is provided with: a tank for storing a processing liquid, for immersing a flat substrate in an upright posture and processing; The processing positions can be raised and lowered, and have a plurality of concave holding grooves, the plurality of holding grooves are used to hold and place the substrate from below the standing posture; The system has vertices that are spaced apart at an interval equal to the interval between the adjacent holding grooves above the holding groove of the holding member located at the processing position and below the depth center of the groove, and The orientation of the vertex extends in a direction parallel to the longitudinal direction of the holding groove.
根據如此之發明,藉由設置保持構件與抵接部而可抑制基板之旋轉,其中,該保持構件具有凹狀之複數個保持溝,該複數個保持溝係自下方保持且載置基板,該抵接部具有尖銳形狀之本體,該尖銳形狀之本體係在較保持溝更上方且較槽之深度中心更下側具有以與所鄰接的保持溝之間隔相等的間隔相離的頂點,且該頂點之朝向係在與上述保持溝之長度方向平行的方向上延伸。在較保持溝更上方且較槽之深度中心更下側以與所鄰接的保持溝之間隔相等的間隔相離的頂點係被設置在各抵接部之本體。 According to such an invention, the rotation of the substrate can be suppressed by providing the holding member and the abutting portion, wherein the holding member has a plurality of concave holding grooves for holding and placing the substrate from below. The abutting portion has a body of a sharp shape having vertices above and below the depth center of the holding groove at an interval equal to the interval between the adjoining holding grooves, and the The orientation of the vertex extends in a direction parallel to the longitudinal direction of the holding groove. The apex which is spaced apart from the space|interval equal to the space|interval of the adjoining holding groove above the holding groove|channel and below the depth center of a groove|channel is provided in the main body of each abutting part.
進而,於本發明中亦可為,上述尖銳形狀為圓錐形狀或 針形狀。 Furthermore, in the present invention, the above-mentioned sharp shape may be a conical shape or Needle shape.
進而,於本發明中亦可為,進而具備有第2抵接部,其具有尖銳形狀之本體,該尖銳形狀之本體係在較上述抵接部更下側具有以與所鄰接的保持溝之間隔相等的間隔相離的頂點。 Furthermore, in the present invention, there may be further provided a second abutting portion having a sharp-shaped main body, and the sharply-shaped main body has a lower side than the above-mentioned abutting portion so as to have a contact with the adjoining holding groove. Equally spaced apart vertices.
若如此,可藉由抵接部與被設置於其下側的第2抵接部而更確實地抑制於基板上所產生的旋轉。抵接部之數量不限於在上下方向上設置2個之情況,而可設置3個以上之經適當被選擇之數量的抵接部。 In this way, the rotation generated on the substrate can be more reliably suppressed by the contact portion and the second contact portion provided on the lower side thereof. The number of abutting portions is not limited to the case where two are provided in the vertical direction, and three or more abutting portions may be provided in an appropriately selected number.
根據本發明之基板處理裝置,可抑制於基板上產生之旋轉。 According to the substrate processing apparatus of the present invention, the rotation generated on the substrate can be suppressed.
1:基板處理裝置 1: Substrate processing device
2:緩衝部 2: Buffer
3:基板搬入搬出口 3: Substrate loading and unloading outlet
5、7、9:處理部 5, 7, 9: Processing Department
5a、5b、7a、7b、9a、9b:處理槽 5a, 5b, 7a, 7b, 9a, 9b: Treatment tank
11、13、15:升降機 11, 13, 15: Lifts
17:主搬送機構 17: Main conveying mechanism
17a:臂 17a: Arm
20a、20b:配管 20a, 20b: Piping
30a、30b、30c、30d:氣泡配管 30a, 30b, 30c, 30d: Bubble piping
43:副搬送機構 43: Sub-conveyor mechanism
52、53:支撐件 52, 53: Supports
52a、52b、53a、53b:保持部 52a, 52b, 53a, 53b: holding part
52a1、52a2、53a1、53a2:本體 52a1, 52a2, 53a1, 53a2: Ontology
52ap、52a1p、52a2p、53a1p、53a2p:頂點 52ap, 52a1p, 52a2p, 53a1p, 53a2p: vertices
52as、52a1s、52a2s、53a1s、53a2s:側面 52as, 52a1s, 52a2s, 53a1s, 53a2s: side
55:控制部 55: Control Department
57:記憶部 57: Memory Department
131:背板 131: Backplane
132、133、134:保持棒 132, 133, 134: Keep the stick
132S:基準位置 132S: Reference position
501:內槽 501: Inner groove
501a、501b、501c、501d:側壁 501a, 501b, 501c, 501d: Sidewalls
521:板狀部 521: Plate part
522、523:卡合部 522, 523: Engagement part
524、525:定位部 524, 525: positioning part
524a、525a:孔 524a, 525a: holes
1321、1322、1331、1341:保持溝 1321, 1322, 1331, 1341: Keep the groove
1321a、1321b:斜面 1321a, 1321b: Bevel
1321c:中心 1321c: Center
1322a:溝底部 1322a: Bottom of trench
5012a、5013a:位置調整用螺栓 5012a, 5013a: Bolts for position adjustment
5012b、5013b:螺帽 5012b, 5013b: Nut
L0:距離 L0: distance
L1:間距 L1: Spacing
L2:距離 L2: Distance
V:周端面 V: peripheral end face
Vp:虛擬面(鉛直面) Vp: virtual plane (vertical plane)
W:基板 W: substrate
Wc:中心 Wc: Center
We:端緣部 We: edge
Wf:表面 Wf: Surface
Wfp:周緣部 Wfp: peripheral part
Wp:周緣部(晶邊部) Wp: peripheral part (crystal edge part)
圖1係表示實施形態之基板處理裝置之一例的圖。 FIG. 1 is a diagram showing an example of a substrate processing apparatus according to the embodiment.
圖2係表示基板處理裝置之功能方塊之一例的方塊圖。 FIG. 2 is a block diagram showing an example of functional blocks of the substrate processing apparatus.
圖3係表示內槽中之基板與保持部的位置關係的圖。 FIG. 3 is a diagram showing the positional relationship between the substrate and the holding portion in the inner tank.
圖4係支撐件之整體立體圖。 FIG. 4 is an overall perspective view of the support.
圖5係表示在內槽中被保持溝所保持的基板與保持部之位置關係的圖。 FIG. 5 is a diagram showing the positional relationship between the substrate held by the holding groove in the inner groove and the holding portion.
圖6係表示被保持溝所保持的基板與保持部之位置關係的放大圖。 6 is an enlarged view showing the positional relationship between the substrate held by the holding groove and the holding portion.
圖7係表示變更保持部對於保持溝之位置而進行處理之情況下之旋轉抑制效果的圖。 FIG. 7 is a diagram showing the effect of suppressing the rotation when the position of the holding portion is changed and the holding groove is processed.
圖8(a)及(b)係表示實施例2之基板及保持溝之剖面形狀的圖。 FIGS. 8( a ) and ( b ) are diagrams showing the cross-sectional shapes of the substrate and the holding groove in Example 2. FIG.
圖9(a)及(b)係表示實施例4之保持部之剖面形狀的圖。 FIGS. 9( a ) and ( b ) are diagrams showing the cross-sectional shape of the holding portion of Example 4. FIG.
圖10(a)及(b)係表示實施例5之在內槽中被保持溝所保持的基板與保持部之位置關係的圖。 FIGS. 10( a ) and ( b ) are diagrams showing the positional relationship between the substrate held by the holding groove in the inner groove and the holding portion in the fifth embodiment.
<實施例1> <Example 1>
以下,對於本發明之實施例,一面參照圖式,一面詳細地進行說明。再者,以下所示之實施例為本案發明之一態樣,其並非限定本案發明之技術範圍者。圖1係表示實施例1之基板處理裝置1之概略構成的立體圖。該基板處理裝置1係主要對平板的基板W施以蝕刻處理、洗淨處理(以下亦簡稱為「處理」)者。於基板處理裝置1中,在圖1中之右裡側,配置有存放基板W的緩衝部2,在緩衝部2之更右裡側,設置有用以操作基板處理裝置1的正面面板(未圖示)。此外,於緩衝部2中之與正面面板的相反側設置有基板搬入搬出口3。此外,自基板處理裝置1之長度方向上之緩衝部2的相反側(圖1中之左近前側)起並排設置有對基板W進行處理的處理部5、7及9。
Hereinafter, the embodiments of the present invention will be described in detail with reference to the drawings. Furthermore, the embodiments shown below are one aspect of the present invention, and are not intended to limit the technical scope of the present invention. FIG. 1 is a perspective view showing a schematic configuration of a
各處理部5、7及9各自具有兩個處理槽5a及5b、7a及7b、9a及9b。此外,於基板處理裝置1具備有副搬送機構43,該副搬送機構43係用以使複數片基板W僅在各處理部5、7及9中之各處理槽5a及5b、7a及7b、或9a及9b之間以圖1中之短箭頭的方向及範圍移動。此外,由於將複數片基板W浸漬於處理槽5a及5b、7a及7b、9a及9b,或將複數片基板W自該等處理槽中拉起,因而該副搬送機構43亦使複數片基板W上下地移動。於各個副搬送機構43設置有保持複數片基板W的可升降之升降機11、13及15。進而,於基板處理裝置1為了將複數片基板W搬送至各處理部5、7及9之各者
而具備有可移動在圖1中之長箭頭的方向及範圍的主搬送機構17。
Each of the processing units 5, 7, and 9 has two
主搬送機構17具有兩根可動式之臂17a。於該等臂17a設置有用以載置基板W的複數個保持溝(省略圖示),於圖1所示之狀態下,以立起姿勢保持各基板W。所謂立起姿勢係指,與基板W之表面Wf(參照圖3及圖5)正交的法線沿著水平方向的姿勢。此外,自圖1中之右斜下方向觀之,主搬送機構17中之兩根臂17a係自「V」字狀擺動為倒「V」字狀,藉此放開各基板W。而且,藉由該動作,可在主搬送機構17與升降機11、13及15之間收送基板W。
The main conveying
於圖2表示基板處理裝置1之功能方塊圖。上述之主搬送機構17、副搬送機構43、處理部5、7、9係藉由控制部55統括性地被控制。作為控制部55之硬體的構成係與一般之電腦相同。即,控制部55具備進行各種運算處理的CPU(Central Processing Unit,中央處理單元)、記憶基本程式的讀取專用之記憶體即ROM(Read Only Memory,唯讀記憶體)、記憶各種資訊的讀寫自如之記憶體即RAM(Random Access Memory,隨機存取記憶體)及已記憶有控制用應用程式、資料等的磁碟等。於本實施例中,藉由控制部55之CPU執行既定之程式,而以將基板W搬送至各處理部5、7、9並施以與程式對應的處理之方式控制各部分。上述程式被記憶於記憶部57。
A functional block diagram of the
在圖3,以處理部5、7、9之各處理槽5a、7a、9a中之處理槽5a為例而進行說明。以下之說明亦適用於其他處理槽7a、9a。於此,在半導體晶圓之製造步驟中,例如將矽等之單結晶鑄塊於其棒軸方向切片,並對所獲得者依序施以倒角、研磨、蝕刻處理、拋光等之處理。其結果,於基板表面上形成有藉由不同材料所構成之複數層、構造、電路。接著,於處理槽5a中所進行的基板W之蝕刻處理例如
以除去殘留在基板W的鎢等之金屬為目的而被進行,藉由將基板W浸漬於作為處理液的磷酸水溶液等在既定時間而被進行。
In FIG. 3, the process tank 5a in each
處理槽5a具有藉由使基板W浸漬於磷酸水溶液中的內槽501及將自內槽501之上部所溢流的磷酸水溶液回收的外槽(未圖示)所構成的雙重槽構造。內槽501係以對磷酸水溶液之抗蝕性優異的石英或氟樹脂材料所形成的俯視矩形之箱形形狀構件。如上述般,於內槽501設置有用以使基板W浸漬於所貯存之磷酸水溶液的升降機13。升降機13具有搬送機構側之背板131、及自背板131之下部於水平方向上延伸且相互平行地被設置的3根保持棒132、133、134。複數片基板W係藉由被設置於保持棒132、133、134的保持溝(如後述)而以立起姿勢被相互平行地一併加以保持。升降機13被設置為可藉由副搬送機構43而於上下左右之方向上移動,而可使所保持之複數片基板W在浸漬於內槽501內之磷酸水溶液中的處理位置與自磷酸水溶液中拉起的交接位置之間升降,並且可使該等朝相鄰之處理槽5b移動。於此,升降機13對應於保持構件。
The processing tank 5a has a double tank structure composed of an
自被配設於內槽501底部的配管20a、20b供給磷酸水溶液。藉此,於內槽501之內部產生自底部朝向上方的磷酸水溶液之上升流。此外,自被配設於內槽501底部的氣泡配管30a、30b、30c、30d供給氮氣之氣泡。藉此,於內槽501之內部亦產生自底部朝向上方的氮氣之上升流。於此,配管20a、20b對應於本發明之噴出管,氣泡配管30a、30b、30c、30d對應於本發明之氣泡供給管。
Phosphoric acid aqueous solution is supplied from piping 20a, 20b arrange|positioned at the bottom of the
圖3係自與內槽501之搬送機構側的側壁501a正交的方向(圖1之自右下朝左上的方向)觀察的圖。基板W係以立起姿勢而自圖3之裡側朝近前方向被保持棒132、133、134所保持並加以排列。
於內槽501之沿著基板W表面而位於兩側的側壁501b、501c設置有與側壁501b、501c正交且於沿著基板W表面之方向所突出的大致圓錐形狀之保持部52a、53a。保持部52a(保持部53a亦相同)係如圖4所示般為具有頂點52ap與側面52as的尖銳形狀。保持部52a(保持部53a亦相同)之頂點52ap的朝向係在與保持溝1321之長度方向平行的朝向(圖3之與紙面平行的朝向)上延伸。保持部52a、53a係相對於包含基板W之表面Wf之法線的鉛直方向之虛擬面(鉛直面)Vp(在圖3中為相當於通過中心Wc而與紙面正交的上下方向之面)而在水平方向之兩側的位置上抵接於基板W表面的周緣部Wfp、Wfp。例如於將基板W之直徑設為300mm時,保持部52a、53a之抵接位置可設為距通過基板W之中心Wc的水平面往下方13mm的位置。於此,保持部52a、53a對應於本發明之保持部,且對應於本發明之抵接部。於此,將內槽501之深度中心設為與基板W之中心Wc的位置一致而進行說明,但並不限於此。
3 : is the figure which looked at from the direction orthogonal to the
保持部52a、53a係沿著側壁501b、501c而於水平方向,即沿著複數片基板W之排列方向,對應於升降機13可保持的基板W之片數設置有複數個。該等保持部52a、53a係形成在被設置於內槽501的支撐件52、53之既定位置上。於圖4表示支撐件52之立體圖。支撐件52具有:板狀部521,其沿著側壁501b而於水平方向上延伸,並形成有保持部52a;板狀之卡合部522、523,該等自板狀部521之兩端部朝上方延伸,在側壁501b之上緣部彎曲而於側壁501b之外側下垂;及柱狀之定位部524、525,該等自板狀部521之兩端側朝內槽501之內側延伸。設置有保持部53a的支撐件53亦為相同構成,故省略說明。支撐件52之卡合部522、523係藉由與內槽501之側壁501b的上
緣卡合而被卡止在內槽501。此外,於支撐件52之定位部524、525設置有孔524a、525a,該等孔524a、525a係插通有分別被立設在內槽501之搬送機構側之側壁501a、步進(step)側之側壁501d的位置調整用螺栓5012a、5013a。隔著定位部524、525,在與側壁501a、501d之相反側之自位置調整用螺栓5012a、5013a的端部而螺旋接合有螺帽5012b、5013b(參照圖5)。在水平方向上調整使螺帽5012b、5013b螺旋接合於位置調整用螺栓5012a、5013a的位置,藉此可對藉由卡合部522、523而被卡止在內槽501的支撐件52及被其所支撐的保持部52a之水平方向的位置進行調整。支撐件52、53之本體可利用石英等之耐熱性材料所形成,保持部52a、53a可利用PFA(perfluoroalkoxy alkane,全氟烷氧基烷烴)所形成,但形成支撐件52、53之材料並不限於此。
The holding
圖5係表示內槽501中之升降機13、基板W、支撐件52及保持部52a之位置關係的圖。圖5為自與側壁501b正交之方向觀察之圖,將升降機13及保持棒132之與通過基板W中心之鉛直面的剖面以虛線所表示。在圖5中,於保持棒132設置有複數個(在圖中僅顯示12個)剖面呈楔形狀的保持溝1321(在圖5中,僅對與右端之基板W關聯的各部分附加符號,由於與其他基板W關聯的各部分具有相同構成,故將符號省略)。
FIG. 5 is a diagram showing the positional relationship of the
參照放大顯示保持溝1321的圖6而說明基板W與保持溝1321之位置關係。基板W表面之端緣部We、We(參照圖6)係分別與保持溝1321之步進側的斜面1321a(參照圖6)及保持溝1321之搬送機構側的斜面1321b(參照圖6)抵接,藉此,基板W之下端部卡合並被保持於保持溝1321。另一方面,如上述般,保持部52a係抵接於基板W表面之周緣部Wfp(參照圖3)。於圖5之與紙面正交的方向上觀察
時,基板W係自下方被保持溝1321所保持,並自上方被保持部52a所保持。保持棒132之保持溝1321係自圖之近前朝向裡側而沿著基板W之外周所形成,因此,實際上基板W的端緣部We係藉由曲線性之區域而與保持溝1321之斜面1321a、1321b之各者抵接。在圖5中雖省略,但在保持棒132與側壁501b之間,藉由保持棒133之相同地剖面呈楔形狀的保持溝1331之步進側及搬送機構側的斜面所保持。此外,於圖5之紙面近前側,在保持棒132與側壁501c之間,藉由保持棒134之相同地剖面呈楔形狀的保持溝1341之步進側及搬送機構側的斜面所保持。而且,於圖5之近前側亦藉由被設置在側壁501c的支撐件53,而沿著基板W之表面,在相對於上下方向上通過基板W中心之直線而線對稱的位置上,保持部53a抵接於基板W表面之周緣部Wfp。
The positional relationship between the substrate W and the holding
圖6係說明升降機13之保持棒132的保持溝1321與保持部52a之位置之關係的圖。圖6係與通過基板W中心之鉛直面平行之剖面上的剖視圖。當於保持棒132之延長方向,即於基板W之排列方向上,將保持溝1321的中心1321c與鄰接之保持溝1321的中心1321c之間隔(保持溝1321之間距)作為L1時,將自保持溝1321的中心1321c起位於L1/2之距離的位置作為基準位置132S。換言之,基準位置132S為相鄰接之保持溝1321的中心1321c彼此之中央的位置。在本實施例中,設為基板W朝搬送機構側(圖中之左側)傾斜,而將保持部52a設置在自基準位置132S之鉛直上方的位置於水平方向上朝基板W傾斜之側隔開既定距離L2(L2>0)的位置,即於僅偏移L2之位置上設置保持部52a。在本實施例中,將L1設定為5mm。相對於圖3所示般被保持棒132所保持的直徑300mm之基板W的中心Wc,以保持部52a於
鉛直方向上位在朝下方L0(於此設定為13mm,但可針對基板W之大小適當設定)之位置之方式,使支撐件52相對於內槽501之側壁501b而被定位。如圖6所示,與以間距L1而在基板W之排列方向上所設置的複數個保持溝1321之各者對應的保持部52a亦以間距L1而在基板W之排列方向上被設置。也就是說,保持部52a(頂點52ap)係以與相鄰接之保持溝1321的間隔,即以與保持溝1321的中心1321c及鄰接之保持溝1321的中心1321c之間隔相等的間隔相離而被配置。此時,由圖6而可明確得知,複數個保持溝1321之相位與所對應之複數個保持部52a之相位偏移。即,以等間隔所配置的複數個保持溝1321之中心1321c相互的位置關係、及對應地以等間隔所配置的複數個保持部52a之相互的位置關係為偏移。相對於對保持溝1321僅偏移間距L1之二分之一的相位之基準位置132S,複數個保持部52a之相位進而朝左側偏移與距離L2對應之量。在圖6中,相對於相位對保持溝1321僅偏移間距L1之二分之一之基準位置132S,複數個保持部52a之相位朝左側偏移,但亦可構成為朝右側偏移。
FIG. 6 is a diagram illustrating the relationship between the positions of the holding
於自與內槽501之側壁501b正交的方向觀察時,在以保持棒132之保持溝1321的中心1321c間之中心即基準位置132S之鉛直方向上方的位置為基準而使距離L2變化並配置保持部52a之情況下,對基板W之旋轉角度進行計測後,獲得如圖7所示之結果。此時,設為如下條件,處理溫度為160.3℃,處理時間為120分鐘,進行磷酸處理-洗淨-乾燥而作為處理流程,利用氮氣而所進行之起泡係每1分鐘13公升,關閉氣泡配管4根中之近前的1根,而自3根吐出。關於保持部之位置,對未自基準位置132S之鉛直上方偏移、及自基準位置132S之鉛直上方偏移0.5mm、0.8mm、1.0mm的情況進行計測。於將
保持部52a配置於基準位置132S之鉛直上方的情況下之基板W的旋轉角度係於-19度至-39度之範圍內分布。相對於此,於自基準位置132S之鉛直上方偏移0.5mm、0.8mm、1.0mm而配置保持部52a的情況下,基板W之旋轉角度係各自於-5度至-10度、-2度至-8度、-6度至-10度之範圍內分布。如此可知,藉由自保持溝1321的中心1321c間之中心即基準位置132S之鉛直方向上方的位置偏移而配置保持部52a,可抑制基板W之旋轉。在使升降機13下降並使其下降至處理位置之狀態下,可藉由保持部與保持溝而抑制基板W之旋轉。
When viewed from a direction perpendicular to the
<實施例2> <Example 2>
以下,對於本發明之實施例2進行說明。對於與實施例1相同之構成而使用相同符號並省略詳細之說明。在實施例1中,如圖5及圖6所示,保持棒132(保持棒133、134亦相同)之保持溝1321的形狀之剖面呈楔形狀,但在實施例2中,保持溝1322之剖面形狀不同。如圖8(a)所示,亦有基板W之周緣部(晶邊部)Wp的周端面V成為朝外徑側凸起之曲面形狀的情形。於如此之情況下,如圖8(b)所示,使保持棒132之保持溝1322的剖面形狀仿照基板W之周緣部Wp的剖面形狀,而將溝底部1322a設為曲線形狀,並隨著朝向開口而成為平行之直線形狀,藉此,基板W與保持溝1322之接觸面積增加,而可更穩定地保持基板W。此外,可如圖8(b)所示,以可配合基板W之處理面的朝向而傾斜地保持之方式,朝基板W之排列方向傾斜地形成保持溝1322,亦可不傾斜而朝鉛直方向形成保持溝1322。此外,在實施例1中,設為將保持部52a、53a抵接於基板W表面之周緣部Wfp的構成,但亦可設為將保持部52a、53a抵接於基板W之呈曲面形狀的周端面V。若
如此,可在保持部52a、53a不接觸於基板W表面之狀態下保持基板W。
Hereinafter, Example 2 of the present invention will be described. The same reference numerals are used for the same structures as those in the first embodiment, and detailed descriptions are omitted. In Example 1, as shown in FIGS. 5 and 6 , the shape of the holding
<實施例3> <Example 3>
以下,對於本發明之實施例3進行說明。對於與實施例1及2相同之構成而使用相同符號並省略說明。在實施例3中構成為,升降機11、13、15不僅可朝上下左右移動,亦可朝主搬送機構方向及步進方向移動,即,當將升降機13之背板131側作為後方,將保持棒132、133、134相對於背板131而延伸之方向作為前方時,為可朝前後移動。藉由使升降機13朝前後移動,而在自使升降機13下降並將基板W浸漬於處理液時升降機13相對於處理槽5、7、9的相對位置,使升降機13下降至處理位置之狀態下,可使其於前後方向上移動。可在與所被設定之保持部52a、53a不干涉之位置使升降機13下降,並以保持部52a、53a相對於基板W而成為最適當位置之方式使升降機13於前後方向上移動。即,以可變更保持部52a、53a與基板W在水平方向上之間隔之方式而構成搬送機構。接著,可於使升降機13上升時,當再次使基板W於前後方向上移動至不干涉於保持部52a、53a的位置後,使升降機13上升。在實施例1及實施例2中,以可調整位置之方式將保持部52a、53a設置在內槽501,但亦可為,在將保持部52a、53a之相對於內槽501在前後方向上的相對位置固定之狀態下進行設置,使升降機13於前後方向上移動,藉此將基板W與保持部52a、53a的相對位置調整至適當之位置。進而,與實施例1及實施例2相同,亦可藉由支撐件52、53而預先將保持部52a、53a設置在內槽501,並藉由升降機13之前後移動而對基板W與保持部52a、53a的相對位置進行微
調整。
Hereinafter, Example 3 of the present invention will be described. The same reference numerals are used for the same structures as those in
<實施例4> <Example 4>
以下,對於本發明之實施例4進行說明。對於與實施例1相同之構成而使用相同符號並省略詳細之說明。圖9(a)係以通過保持部52a、53a之中心軸的剖面顯示實施例4之保持部52a、53a的形狀及與基板W之關係的圖。圖9(b)係以通過保持部52a、53a之中心軸的剖面顯示實施例4之變形例之保持部52a、53a的形狀及與基板W之關係的圖。在實施例1中,使保持部52a、53a形成為大致圓錐形狀之突起,但在實施例4中,保持部52a、53a之形狀不同。於此,保持部52a包含:針形狀之本體52a1,其由具有頂點52a1p的大致圓錐形狀部與圓柱狀部所構成;及針形狀之本體52a2,其由具有頂點52a2p的大致圓錐形狀部與圓柱狀部所構成。保持部53a包含:針形狀之本體53a1,其由具有頂點53a1p的大致圓錐形狀部與圓柱形狀部所構成;及針形狀之本體53a2,其由具有頂點53a2p的大致圓錐形狀部與圓柱狀部所構成。此時,頂點52a1p、頂點52a2p、頂點53a1p、頂點53a2p的朝向均於與保持溝1321之長度方向平行的朝向上延伸。如圖9(a)所示,藉由將保持部52a、53a之剖面形狀設為於基板W之厚度方向上夾持的楔形狀,而可增加與基板W之周緣部的接觸面積,而更穩定地保持基板W。保持部52a之本體52a1為具有頂點52a1p及側面52a1s的尖銳形狀。此外,保持部52a之本體52a2亦為具有頂點52a2p及側面52a2s的尖銳形狀。保持部53a之本體53a1為具有頂點53a1p及側面53a1s的尖銳形狀。此外,保持部53a之本體53a2亦為具有頂點53a2p及側面53a2s的尖銳形狀。
Hereinafter, Example 4 of the present invention will be described. The same reference numerals are used for the same structures as those in the first embodiment, and detailed descriptions are omitted. FIG.9(a) is a figure which shows the shape of the holding|
此外,亦可如圖9(b)所示,使保持部52a、53a之剖面形狀成為自基板W之厚度方向的兩面側夾住的形狀。藉由自基板W之厚度方向的兩面夾住基板W之周緣部,即便於基板W之周緣部為朝外徑側凸起的曲線形狀之情況,或為不適合於圖9(a)之楔形狀的情況下,仍可藉由自兩面夾住基板W之周緣部而更穩定地保持基板W。於此,保持部52a係藉由本體52a1及本體52a2而構成為凹狀之溝形狀。保持部53a亦藉由本體53a1及本體53a2而構成為凹狀之溝形狀。保持部52a之本體52a1為具有頂點52a1p及側面52a1s的尖銳形狀。此外,保持部52a之本體52a2亦為具有頂點52a2p及側面52a2s的尖銳形狀。保持部53a之本體53a1為具有頂點53a1p及側面53a1s的尖銳形狀。此外,保持部53a之本體53a2亦為具有頂點53a2p及側面53a2s的尖銳形狀。
In addition, as shown in FIG.9(b), the cross-sectional shape of the holding
<實施例5> <Example 5>
以下,對於本發明之實施例5進行說明。對於與實施例1相同之構成而使用相同符號並省略詳細之說明。圖10(a)係與圖5同樣為表示內槽501中之升降機13、基板W、支撐件52及保持部52a、52b之位置關係的圖。圖10(b)係放大顯示圖10(a)中之基板W的一部分與保持部52a、52b之位置關係的圖。如圖4及圖5所示,在實施例1中,於支撐件52、53上,相對於包含基板W之表面Wf之法線的鉛直方向之虛擬面Vp而在水平方向之兩側針對每片基板W各設置1個保持部52a、53a,但在實施例5中,於支撐件52、53上,針對每片基板W各設置1個保持部52a、53a與在其下側各設置1個保持部52b、53b。保持部52b之頂點被配置在連結保持部52a之頂點與保持溝1321之端部
的大致直線上(保持部53b之頂點與保持部53a之頂點及保持溝1321之端部的位置關係亦相同)。保持部52b、53b係相對於所對應的保持部52a、53a而被設置在朝支撐件52之定位部524側偏移的位置上,並位於保持部52a、53a與保持所對應之基板W的保持溝之間。於此,保持部52b、53b對應於本發明之第2保持部及第2抵接部。可於上述鉛直方向上在L0與保持溝1321之中心1321c之間具有複數個保持部,其個數、位置係可以如下目的而進行調整,即,配合因處理液與氣泡之自底部朝上方之流動的強度、藉由升降機的升降所致之基板的升降速度等而抑制於基板上產生的旋轉。
Hereinafter, Example 5 of the present invention will be described. The same reference numerals are used for the same structures as those in the first embodiment, and detailed descriptions are omitted. FIG. 10( a ) is a diagram showing the positional relationship of the
<變形例> <Variation>
於上述之實施例中,使保持部52a、53a形成為大致圓錐形狀之突起、針形狀之突起或溝形狀,但保持部52a、53a之形狀並不限於此。此外,在上述之實施例中,已對於使用磷酸水溶液作為處理液之情況進行說明,但處理液並不限於此,對於使用混酸(磷酸、硝酸、醋酸、純水)水溶液等其他處理液之情況,亦可相同地加以應用。以上所揭示之實施形態、變形例可分別加以組合。
In the above-mentioned embodiment, the holding
13:升降機 13: Lift
52:支撐件 52: Supports
52a:保持部 52a: Retention Department
132:保持棒 132: Keep Stick
501:內槽 501: Inner groove
501a、501b、501d:側壁 501a, 501b, 501d: side walls
524、525:定位部 524, 525: positioning part
1321:保持溝 1321: Keep Groove
5012a、5013a:位置調整用螺栓 5012a, 5013a: Bolts for position adjustment
5012b、5013b:螺帽 5012b, 5013b: Nut
W:基板 W: substrate
Wf:表面 Wf: Surface
Claims (22)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-205578 | 2018-10-31 | ||
| JP2018205578 | 2018-10-31 | ||
| JP2019197952A JP7382790B2 (en) | 2018-10-31 | 2019-10-30 | Substrate processing equipment |
| JP2019-197952 | 2019-10-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202027160A TW202027160A (en) | 2020-07-16 |
| TWI756579B true TWI756579B (en) | 2022-03-01 |
Family
ID=70463808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108139520A TWI756579B (en) | 2018-10-31 | 2019-10-31 | Substrate processing equipment |
Country Status (2)
| Country | Link |
|---|---|
| TW (1) | TWI756579B (en) |
| WO (1) | WO2020091001A1 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6318389B1 (en) * | 1999-10-29 | 2001-11-20 | Memc Electronic Materials, Inc. | Apparatus for cleaning semiconductor wafers |
| JP2005225577A (en) * | 2004-02-10 | 2005-08-25 | Toshiba Ceramics Co Ltd | Substrate processing equipment |
| TWI362067B (en) * | 2006-04-11 | 2012-04-11 | Dainippon Screen Mfg | |
| TWI584390B (en) * | 2011-09-09 | 2017-05-21 | 東京威力科創股份有限公司 | A substrate processing apparatus, a substrate processing method, and a memory medium |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000012672A (en) * | 1998-06-22 | 2000-01-14 | Dainippon Screen Mfg Co Ltd | Substrate holding structure, substrate processor, substrate transfer apparatus and substrate housing |
| JP5450309B2 (en) * | 2009-10-05 | 2014-03-26 | 東京エレクトロン株式会社 | Ultrasonic cleaning apparatus, ultrasonic cleaning method, and recording medium on which a computer program for executing the ultrasonic cleaning method is recorded |
-
2019
- 2019-10-31 TW TW108139520A patent/TWI756579B/en active
- 2019-10-31 WO PCT/JP2019/042890 patent/WO2020091001A1/en not_active Ceased
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6318389B1 (en) * | 1999-10-29 | 2001-11-20 | Memc Electronic Materials, Inc. | Apparatus for cleaning semiconductor wafers |
| JP2005225577A (en) * | 2004-02-10 | 2005-08-25 | Toshiba Ceramics Co Ltd | Substrate processing equipment |
| TWI362067B (en) * | 2006-04-11 | 2012-04-11 | Dainippon Screen Mfg | |
| TWI584390B (en) * | 2011-09-09 | 2017-05-21 | 東京威力科創股份有限公司 | A substrate processing apparatus, a substrate processing method, and a memory medium |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202027160A (en) | 2020-07-16 |
| WO2020091001A1 (en) | 2020-05-07 |
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