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TWI744474B - 陶瓷／鋁接合體、絕緣電路基板、ｌｅｄ模組、陶瓷構件、陶瓷／鋁接合體之製造方法、絕緣電路基板之製造方法 - Google Patents

陶瓷／鋁接合體、絕緣電路基板、ｌｅｄ模組、陶瓷構件、陶瓷／鋁接合體之製造方法、絕緣電路基板之製造方法 Download PDF

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Publication number
TWI744474B
TWI744474B TW107104124A TW107104124A TWI744474B TW I744474 B TWI744474 B TW I744474B TW 107104124 A TW107104124 A TW 107104124A TW 107104124 A TW107104124 A TW 107104124A TW I744474 B TWI744474 B TW I744474B
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Taiwan
Prior art keywords
aluminum
ceramic
layer
nitride layer
aluminum nitride
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TW107104124A
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English (en)
Chinese (zh)
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TW201841870A (zh
Inventor
寺伸幸
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日商三菱綜合材料股份有限公司
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Priority claimed from JP2018009821A external-priority patent/JP7052374B2/ja
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  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
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  • Laminated Bodies (AREA)
TW107104124A 2017-02-06 2018-02-06 陶瓷／鋁接合體、絕緣電路基板、ｌｅｄ模組、陶瓷構件、陶瓷／鋁接合體之製造方法、絕緣電路基板之製造方法 TWI744474B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2017-019737 2017-02-06
JP2017019737 2017-02-06
JP2018-009821 2018-01-24
JP2018009821A JP7052374B2 (ja) 2017-02-06 2018-01-24 セラミックス／アルミニウム接合体の製造方法、絶縁回路基板の製造方法

Publications (2)

Publication Number Publication Date
TW201841870A TW201841870A (zh) 2018-12-01
TWI744474B true TWI744474B (zh) 2021-11-01

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